Light-emitting chip and light-emitting device

Abstract

The invention provides a light-emitting chip and a light-emitting device. The light-emitting chip comprises a light-emitting unit, a first electrode, a second electrode and a reflecting layer. The light-emitting unit comprises a light-emitting diode and a filling layer. The light emitting diode comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer which are stacked in sequence. The filling layer surrounds the light emitting diode. The first electrode is arranged on the first side of the light-emitting unit and electrically connected with the first type semiconductor layer. The second electrode is arranged on the second side of the light-emitting unit and is electrically connected with the second type semiconductor layer. The material of the second electrode comprises a transparent conductive material. The reflective layer is disposed on a side surface of the filling layer. In a cross-sectional view, a side surface of the filling layer is connected with a top surface of the filling layer.

Description

Technical Field

[0001] The present disclosure relates to a chip and an electronic device, and more particularly to a light-emitting chip and a light-emitting device. Background Art

[0002] For a horizontal type light-emitting chip, two electrodes (e.g., a P-type electrode and an N-type electrode) are located on the same side of the chip, while for a vertical type light-emitting chip, the two electrodes are located on opposite sides of the chip (e.g., the upper and lower sides). Therefore, it is easier to miniaturize the area of the vertical type light-emitting chip. However, after mass transfer, the design in which the two electrodes of the vertical type light-emitting chip are located on opposite sides of the chip makes it difficult to directly perform electrical measurement, resulting in difficulties in yield monitoring. Summary of the Invention

[0003] The present disclosure provides a light-emitting chip and a light-emitting device, which help to reduce the difficulty of electrical measurement.

[0004] According to an embodiment of the present disclosure, the light-emitting chip includes a light-emitting unit, a first electrode, a second electrode, and a reflective layer. The light-emitting unit includes a light-emitting diode and a filling layer. The light-emitting diode includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer stacked in sequence. The filling layer surrounds the light-emitting diode. The first electrode is disposed on a first side of the light-emitting unit and electrically connected to the first-type semiconductor layer. The second electrode is disposed on a second side of the light-emitting unit and electrically connected to the second-type semiconductor layer. The material of the second electrode includes a transparent conductive material. The reflective layer is disposed on a side surface of the filling layer. In a cross-sectional view, the side surface of the filling layer is connected to the top surface of the filling layer.

[0005] According to an embodiment of the present disclosure, the light-emitting device includes the aforementioned light-emitting chip and at least one light-collecting element located above the light-emitting chip.

[0006] To make the above features and advantages of the present disclosure more obvious and understandable, specific embodiments are hereinafter given and described in detail in conjunction with the accompanying drawings as follows. Brief Description of the Drawings

[0007] Figure 1 And Figure 3 are respectively cross-sectional schematic diagrams of two light-emitting chips according to some embodiments of the present disclosure;

[0008] Figure 2 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 And Figure 9 are respectively cross-sectional schematic diagrams of seven light-emitting devices according to some embodiments of the present disclosure. Detailed Implementation Modes

[0009] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. As far as possible, the same reference numerals are used in the drawings and the description to denote the same or similar parts.

[0010] Throughout this specification and the appended claims, certain terms will be used to refer to particular elements. Those skilled in the art should understand that electronic device manufacturers may refer to the same element by different names. This document is not intended to distinguish between elements that perform the same function but have different names. In the following specification and claims, words such as "comprising" and "including" are open-ended terms and should therefore be interpreted as meaning "including but not limited to...".

[0011] Directional terms mentioned herein, such as "up", "down", "front", "back", "left", "right", etc., are only with reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustration and not for limiting this disclosure. In the drawings, each drawing shows the general characteristics of the methods, structures, and / or materials used in a particular embodiment. However, these drawings should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and positions of each film layer, region, and / or structure may be reduced or enlarged.

[0012] When a structure (or layer, element, substrate) described in this disclosure is above / over another structure (or layer, element, substrate), it may mean that the two structures are adjacent and directly connected, or it may mean that the two structures are adjacent but not directly connected. Indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate element, intermediate substrate, intermediate interval) between the two structures. The lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intermediate structure. The intermediate structure can be composed of a single-layer or multi-layer solid structure or non-solid structure, without limitation. In this disclosure, when a structure is provided "on" another structure, it may mean that a structure is "directly" on another structure, or it may mean that a structure is "indirectly" on another structure, that is, there is at least one structure sandwiched between a structure and another structure.

[0013] The terms "about", "substantially", or "approximately" are generally interpreted as within 10% of the given value or range, or within 5%, 3%, 2%, 1%, or 0.5% of the given value or range. In addition, the phrases "ranging from a first value to a second value" and "ranging between a first value and a second value" mean that the range includes the first value, the second value, and other values therebetween.

[0014] The ordinal terms used in the description and claims, such as "first", "second", etc., are used to modify elements, and they do not inherently imply or represent that the (or these) elements have any previous ordinal numbers, nor do they represent the order of one element relative to another element or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name. The terms used in the claims and the description may not be the same. Accordingly, the first component in the description may be the second component in the claims.

[0015] The electrical connections or couplings described in this disclosure may refer to direct connections or indirect connections. In the case of a direct connection, the endpoints of the elements on two circuits are directly connected or connected to each other by a conductor segment. In the case of an indirect connection, there are switches, diodes, capacitors, inductors, resistors, other suitable elements, or combinations of the above elements between the endpoints of the elements on two circuits, but not limited to this.

[0016] In this disclosure, the thickness, length, and width can be measured by using an optical microscope (OM), and the thickness or width can be measured from the cross-sectional image in an electron microscope, but not limited to this. Additionally, there may be a certain error between any two values or directions being compared. Furthermore, the phrases "a given range is from a first value to a second value", "a given range falls within the range from a first value to a second value", or "a given range is between a first value and a second value" mean that the given range includes the first value, the second value, and other values therebetween. If a first direction is perpendicular to a second direction, the angle between the first direction and the second direction can be between 80 degrees and 100 degrees; if a first direction is parallel to a second direction, the angle between the first direction and the second direction can be between 0 degrees and 10 degrees.

[0017] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the technical field to which this disclosure belongs. It is understood that these terms, such as those defined in a commonly used dictionary, should be interpreted to have a meaning consistent with the relevant technology and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure.

[0018] In the present disclosure, the electronic device may include a light-emitting device, a display device, a backlight device, an antenna device, a packaging device, a sensing device, or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The display device may include, for example, liquid crystal, light-emitting diodes, fluorescence, phosphor, quantum dot (QD), other suitable display media, or a combination of the foregoing. The antenna device may include, for example, a Reconfigurable Intelligent Surface (RIS), a Frequency Selective Surface (FSS), a Radio Frequency Filter (RF-Filter), a Polarizer, a Resonator, or an Antenna, etc. The antenna may be an antenna in a liquid crystal form or an antenna of Varactor Diodes. The sensing device may be a sensing device for sensing capacitance, light, heat, or ultrasonic waves, but is not limited thereto. In the present disclosure, the electronic device may include electronic components, and the electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diodes may include light-emitting diodes, Varactor Diodes, or photodiodes. The light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), mini light-emitting diodes (mini LEDs), micro light-emitting diodes (micro LEDs), or quantum dot light-emitting diodes (quantum dot LEDs), but are not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any permutation and combination of the foregoing, but is not limited thereto. The packaging device may be a packaging device suitable for Wafer-Level Package (WLP) technology or Panel-Level Package (PLP) technology, such as a chip first process or a chip last process. In addition, the shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a driving system, a control system, a light source system, etc. to support the display device, the antenna device, wearable devices (such as including augmented reality or virtual reality), vehicle-mounted devices (such as including automotive windshields), or splicing devices.

[0019] Figure 1 and Figure 3They are respectively cross-sectional schematic diagrams of two light-emitting chips according to some embodiments of the present disclosure. Figure 2 and Figure 4 and Figure 5 and Figure 6 and Figure 7 and Figure 8 and Figure 9 They are respectively cross-sectional schematic diagrams of seven light-emitting devices according to some embodiments of the present disclosure. It should be noted that, without departing from the spirit of the present disclosure, the features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the inventive spirit or conflict with each other, they can be arbitrarily mixed and used.

[0020] Please first refer to Figure 1 , the light-emitting chip 1 may include a light-emitting unit 10, a first electrode 11, a second electrode 12, and a reflective layer 13. The light-emitting unit 10 includes a light-emitting diode 100 and a filling layer 102. The light-emitting diode 100 includes a first-type semiconductor layer SL1, a light-emitting layer LE, and a second-type semiconductor layer SL2 stacked in sequence. The filling layer 102 surrounds the light-emitting diode 100. The first electrode 11 is disposed on the first side E1 (such as the lower side in Figure 1 ) of the light-emitting unit 10 and is electrically connected to the first-type semiconductor layer SL1. The second electrode 12 is disposed on the second side E2 (such as the upper side in Figure 1 ) of the light-emitting unit 10 and is electrically connected to the second-type semiconductor layer SL2. The material of the second electrode 12 includes a transparent conductive material. The reflective layer 13 is disposed on the side surface S102 of the filling layer 102. In the cross-sectional view, as shown in Figure 1 , the side surface S102 of the filling layer 102 is connected to the top surface T102 of the filling layer 102.

[0021] Specifically, the light-emitting diode 100 of the light-emitting unit 10 is used to provide light, such as visible light or non-visible light, which is not limited herein. In the light-emitting diode 100, the first-type semiconductor layer SL1, the light-emitting layer LE, and the second-type semiconductor layer SL2 are, for example, stacked in sequence along the thickness direction (e.g., direction Z) of the light-emitting chip 1, that is, the light-emitting layer LE is located between the first-type semiconductor layer SL1 and the second-type semiconductor layer SL2.

[0022] The first-type semiconductor layer SL1 and the second-type semiconductor layer SL2 may be a P-type semiconductor layer and an N-type semiconductor layer, respectively. Alternatively, the first-type semiconductor layer SL1 and the second-type semiconductor layer SL2 may be an N-type semiconductor layer and a P-type semiconductor layer, respectively. The light-emitting layer LE may include a quantum well layer or a multiple quantum well (MQW) layer, which is not limited herein.

[0023] The filling layer 102 of the light-emitting unit 10 surrounds the light-emitting diode 100. For example, the filling layer 102 may at least contact the side surface of the light-emitting diode 100. For the sake of simplicity of the drawings, Figure 1 the side surface of the light-emitting diode 100 is not labeled. The side surface of the light-emitting diode 100 includes, for example, the side surface of the first-type semiconductor layer SL1, the side surface of the light-emitting layer LE, and the side surface of the second-type semiconductor layer SL2.

[0024] The filling layer 102 may expose at least a part of the bottom surface BSL1 of the first-type semiconductor layer SL1 to facilitate the electrical connection between the first-type semiconductor layer SL1 and the first electrode 11. For example, the first electrode 11 may be disposed on the bottom surface BSL1 exposed by the filling layer 102, but not limited thereto. In some embodiments, as Figure 1 shown, the filling layer 102 may cover a partial bottom surface BSL1 of the first-type semiconductor layer SL1, such that the bottom surface B102 of the filling layer 102 is lower than the bottom surface BSL1 of the first-type semiconductor layer SL1, but the present disclosure is not limited thereto.

[0025] The filling layer 102 may expose at least a part of the top surface TSL2 of the second-type semiconductor layer SL2 to facilitate the electrical connection between the second-type semiconductor layer SL2 and the second electrode 12. For example, the second electrode 12 may be disposed on the top surface TSL2 exposed by the filling layer 102, but not limited thereto. In some embodiments, as Figure 1 shown, the top surface T102 of the filling layer 102 may be flush with the top surface TSL2 of the second-type semiconductor layer SL2. In an embodiment where the second electrode 12 is further disposed on the top surface T102 of the filling layer 102, as Figure 1 shown, the design that the top surface T102 of the filling layer 102 is flush with the top surface TSL2 of the second-type semiconductor layer SL2 helps to reduce the probability of disconnection of the second electrode 12 caused by surface step difference.

[0026] The side surface S102 of the filling layer 102 connects, for example, the top surface T102 and the bottom surface B102 of the filling layer 102, and the side surface S102 of the filling layer 102 is used to carry the reflective layer 13. In some embodiments, the cross-sectional shape of the filling layer 102 may be approximately an inverted trapezoid with a hollow center. For example, in a cross-sectional view, as Figure 1As shown, the light-emitting unit 10 has a first width W1 and a second width W2 on a first side E1 and a second side E2 respectively, and the second width W2 is greater than the first width W1. In addition, the angle θ between the side surface S102 and the bottom surface B102 of the filling layer 102 is, for example, greater than or equal to 100 degrees and less than or equal to 170 degrees, or greater than or equal to 110 degrees and less than or equal to 150 degrees. By changing the angle θ, the tilt angle of the reflective layer 13 provided on the side surface S102 of the filling layer 102 can be changed, thereby improving the light extraction efficiency, changing the light pattern or light intensity distribution of the light emitted from the light-emitting unit 10, etc.

[0027] The material of the filling layer 102 can be selected as a light-transmitting dielectric material to reduce the loss of light propagation in the filling layer 102. For example, the material of the filling layer 102 can include acrylic-based materials, siloxane materials, photoresists, silica gels, or other materials with a transmittance greater than 80% or even 90%. For example, when the light-emitting diode 100 emits visible light (such as light with a wavelength between 400 nm and 700 nm), the material of the filling layer 102 can be selected as a material with a transmittance greater than 80% or even 90% for visible light.

[0028] The first electrode 11 is, for example, disposed on the bottom surface BSL1 of the first-type semiconductor layer SL1 and contacts the bottom surface BSL1 of the first-type semiconductor layer SL1. In some embodiments, the material of the first electrode 11 can include silver, aluminum, or other metals and / or alloys with high reflectivity, such as metals or alloys with a reflectivity higher than 60% for visible light, but not limited thereto. In other embodiments, the material of the first electrode 11 can include gold, copper, or other metals and / or alloys with high conductivity, and a non-conductive reflective layer, such as a distributed Bragg reflector (DBR), can be formed on the inner side (the side close to the light-emitting unit 10) of the metals and / or alloys with high conductivity, but not limited thereto.

[0029] The second electrode 12 is disposed, for example, on the top surface TSL2 of the second-type semiconductor layer SL2 and the top surface T102 of the filling layer 102 and contacts the top surface TSL2 of the second-type semiconductor layer SL2 and the top surface T102 of the filling layer 102. The material of the second electrode 12 includes a transparent conductive material such that light can pass through the second electrode 12. The transparent conductive material may include metal oxides, graphene, other suitable transparent conductive materials, or a combination of the above. The metal oxides may include indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, or other metal oxides. As another option, the transparent conductive material may include a thin metal or a metal grid. For example, a very thin metal layer (e.g., a magnesium layer or a silver layer) may be formed, or a metal grid layer with light-transmitting openings may be formed by screen printing or other patterning processes such that light can pass through the second electrode 12.

[0030] The reflective layer 13 is used to reflect light so that the light-emitting chip 1 can emit more light. In some embodiments, the reflective layer 13 can further serve as an extension electrode of the second electrode 12. By moving the bonding end of the second electrode 12 to the side where the first electrode 11 is located (such as the first side E1) through the reflective layer 13, a flip-chip bonding structure is formed, which helps to reduce the difficulty of electrical measurement after mass transfer and makes yield monitoring easier. As Figure 1 shown, the second electrode 12 can be electrically connected to the reflective layer 13. For example, the second electrode 12 can further extend onto the reflective layer 13 and be connected to the reflective layer 13, but not limited thereto. In addition, the reflective layer 13 can include a first portion 130 and a second portion 132, wherein the first portion 130 is disposed on the side surface S102 of the filling layer 102, and the second portion 132 is disposed on the bottom surface B102 of the filling layer 102. The second electrode 12 can be disposed on the top surface TSL2 of the second-type semiconductor layer SL2 and the top surface T102 of the filling layer 102 and be connected to the first portion 130. The second portion 132 is separated from the first electrode 11 to maintain independent electrical properties, and the second portion 132 can be electrically connected to the second electrode 12 through the first portion 130.

[0031] The angle between the first portion 130 and the second portion 132 is equal to or approximately equal to the angle θ between the side surface S102 and the bottom surface B102 of the filling layer 102. In some embodiments, the angle (angle θ) between the first portion 130 and the second portion 132 is, for example, greater than or equal to 100 degrees and less than or equal to 170 degrees, or greater than or equal to 110 degrees and less than or equal to 150 degrees. In addition, the material of the reflective layer 13 may include silver, aluminum, tin, indium, gold, or a combination of the above, but not limited thereto.

[0032] Figure 2 is a light-emitting device 2 of the light-emitting chip 1 including Figure 1 Please refer toFigure 2 , in addition to the light-emitting chip 1, the light-emitting device 2 may further include at least one light-collecting element located above the light-emitting chip 1. For Figure 2 example, the at least one light-collecting element may be a combination of a reflective layer 24, a filling layer 27, and a bank layer 202. In some embodiments, as Figure 2 shown, the light-emitting device 2 may further include a circuit board 22, wherein the light-emitting chip 1 and the at least one light-collecting element (e.g., the reflective layer 24, the filling layer 27, and the bank layer 202) are disposed on the circuit board 22, and the circuit board 22 includes a first pad 220 electrically connected to the first electrode 11 and a second pad 222 electrically connected to the second electrode 12. The materials of the first pad 220 and the second pad 222 may include gold, tin, indium, copper, or other suitable conductive materials.

[0033] In some embodiments, as Figure 2 shown, the light-emitting device 2 may further include a pixel definition layer 200, the pixel definition layer 200 being located on the circuit board 22 and having a first opening A1. The light-emitting chip 1 is located in the first opening A1. The bank layer 202 is located on the pixel definition layer 200 and has a second opening A2 overlapping with the first opening A1. The materials of the pixel definition layer 200 and the bank layer 202 may include organic photoresist, and the colors of the pixel definition layer 200 and the bank layer 202 may be transparent, black, white, or other colors, but are not limited thereto. In some embodiments, a reflective layer 24 may be formed on the inner wall of the bank layer 202 to improve the light extraction efficiency. The material of the reflective layer 24 may include silver, aluminum, or other materials with high reflectivity (e.g., distributed Bragg reflector). In some embodiments, the filling layer 27 is disposed in the second opening A2. The material of the filling layer 27 may refer to the material of the filling layer 102, which will not be repeated herein.

[0034] In some embodiments, as Figure 2 shown, the first pad 220 and the second pad 222 are located in the first opening A1, the second electrode 12 is further disposed on the top surface T102 of the filling layer 102, and the second electrode 12 may be electrically connected to the second pad 222 through the reflective layer 13. Specifically, when the light-emitting chip 1 is bonded to the circuit board 22, the first pad 220 and the second pad 222 may be respectively bonded to the first electrode 11 and the second portion 132 of the reflective layer 13, and the second electrode 12 may be electrically connected to the second pad 222 via the first portion 130 and the second portion 132. Since the second portion 132 and the first electrode 11 are located on the same side (e.g., the lower side) of the light-emitting chip 1, it helps to reduce the difficulty of electrical measurement after mass transfer, making yield monitoring easier.

[0035] In some embodiments, as Figure 2As shown, the light-emitting device 2 may further include a filling layer 25, a substrate 26, and an adhesive layer 28, but is not limited thereto. According to different requirements, the light-emitting device 2 may add or reduce one or more components or film layers.

[0036] The filling layer 25 is disposed in the first opening A1. The filling layer 25 can enhance the adhesion between the light-emitting chip 1 and the circuit substrate 22. The material of the filling layer 25 may refer to the material of the filling layer 102, which will not be repeated here.

[0037] The substrate 26 is a light-transmitting substrate, and the substrate 26 can be used to carry the at least one light-collecting element (for example, including the bank layer 202, the reflective layer 24, and the filling layer 27). Specifically, the bank layer 202, the reflective layer 24, and the filling layer 27 can be formed on the substrate 26 and then joined to the circuit substrate 22 through the adhesive layer 28. The substrate 26 can be a rigid substrate or a flexible substrate. The material of the substrate 26 includes, for example, glass, quartz, ceramics, sapphire, or plastic, etc., but is not limited thereto. The plastic may include polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), other suitable flexible materials, or a combination of the foregoing materials, but is not limited thereto. The material of the adhesive layer 28 may include optical clear adhesive (OCA) or optical clear resin (OCR), but is not limited thereto.

[0038] In some embodiments, the included angle α between the substrate 26 and the reflective layer 24 is, for example, greater than or equal to 10 degrees and less than or equal to 80 degrees, or greater than or equal to 30 degrees and less than or equal to 70 degrees. By changing the included angle α, the tilt angle of the reflective layer 24 can be changed, thereby improving the light extraction efficiency, changing the light pattern or light intensity distribution of the light emitted from the light-emitting device 2, etc.

[0039] In other embodiments, although not shown, the bank layer 202 may be directly formed on the pixel definition layer 200. Thus, the light-emitting device 2 may not include the adhesive layer 28 and the substrate 26. Optionally, the at least one light-collecting element may not include the filling layer 27.

[0040] According to a simulation result, compared with a traditional light-emitting chip, the design of the light-emitting chip 1 helps to increase the luminous brightness from 100% to greater than 250% and reduce the angle of the full width at half maximum of the light pattern from ±65° to ±35°, while the design of the light-emitting chip 1 with the at least one light-collecting element (for example, the reflective element 20) helps to increase the luminous brightness from 100% to greater than 550% and reduce the angle of the full width at half maximum of the light pattern from ±65° to ±25°.

[0041] Please refer to Figure 3 , the main differences between the light-emitting chip 1A and Figure 1 the light-emitting chip 1 are described as follows. In the light-emitting chip 1A, the second electrode 12 is electrically insulated from the reflective layer 13A. For example, the second electrode 12 and the reflective layer 13A can be separated from each other to maintain independent electrical properties. In addition, the first electrode 11A is disposed, for example, on the bottom surface BSL1 of the first-type semiconductor layer SL1 and the bottom surface B102 of the filling layer 102A and is connected to the reflective layer 13A. In some embodiments, the first electrode 11A and the reflective layer 13A can be formed together, for example, using the same material and the same process, but not limited thereto. In other embodiments, the first electrode 11A and the reflective layer 13A can be formed separately. The included angle between the first electrode 11A and the reflective layer 13A is equal to or approximately equal to the included angle θ between the side surface S102 and the bottom surface B102 of the filling layer 102A. In some embodiments, the included angle (included angle θ) between the first electrode 11A and the reflective layer 13A is, for example, greater than or equal to 100 degrees and less than or equal to 170 degrees, or greater than or equal to 110 degrees and less than or equal to 150 degrees. In some embodiments, as Figure 2 shown, the filling layer 102A can expose the entire bottom surface BSL1 of the first-type semiconductor layer SL1, and the bottom surface B102 of the filling layer 102A can be flush with the bottom surface BSL1 of the first-type semiconductor layer SL1. Thus, the probability of the first electrode 11A breaking due to surface step difference can be reduced. In some embodiments, although not shown, the second electrode 12 is connected to the reflective layer 13A, the reflective layer 13A does not extend to the bottom surface B102 of the filling layer 102A, and the reflective layer 13A is not connected to the first electrode 11A. In the above embodiments, the light-emitting chip 1A is still a vertical type light-emitting chip and is not converted into a horizontal type light-emitting chip through the reflective layer 13A.

[0042] Figure 4 is a light-emitting device 2A including Figure 3 the light-emitting chip 1A. Please refer to Figure 4 , the light-emitting device 2A and Figure 2The main differences of the light-emitting device 2 are described below. In the light-emitting device 2A, the first pad 220 is located in the first opening A1, the pixel definition layer 200 further has a third opening A3 that locally exposes the second pad 222, the light-emitting device 2A further includes a connection line 29 located on the pixel definition layer 200 and in the third opening A3, and the second electrode 12 is electrically connected to the second pad 222 through the connection line 29. Specifically, when the light-emitting chip 1A is bonded to the circuit board 22, the first pad 220 and the second pad 222 can be respectively bonded to the first electrode 11A and the connection line 29, and the second electrode 12 can be electrically connected to the second pad 222 via the connection line 29. In some embodiments, the second electrode 12 and the connection line 29 can be formed together, for example, formed of the same material and the same process, but not limited thereto.

[0043] Figures 5 to 9 is a cross-sectional schematic diagram of various light-emitting devices according to other embodiments of the present disclosure. In Figures 5 to 9 for the sake of simplicity of the drawings, the first pad 220 and the second pad 222 are omitted from being shown, and the detailed structure of the light-emitting chip 1B and the electrical connection details between the light-emitting chip 1B and the circuit board 22 are omitted. According to different requirements, Figures 5 to 9 the light-emitting chip 1B in Figure 2 or Figure 4 can adopt the aforementioned light-emitting chip 1 or light-emitting chip 1A, and the electrical connection details between the light-emitting chip 1B and the circuit board 22 can be referred to

[0044] Please refer to Figure 5 , the main differences between the light-emitting device 2B and the aforementioned light-emitting device 2 or light-emitting device 2A are described below. The light-emitting device 2B does not include Figure 2 or Figure 4 the substrate 26, the filling layer 27, and the adhesive layer 28. In addition, a plurality of microstructures MS are formed on the light-emitting surface (such as the top surface of the light-emitting chip 1B) of the light-emitting chip 1B. The plurality of microstructures MS are formed, for example, by roughening or patterning the top of the light-emitting chip 1B, but not limited thereto.

[0045] In other embodiments, although not shown, the pixel definition layer 200 and the dam layer 202 can be replaced with a single-layer structure. For example, the reflective element can be composed of a single-layer photoresist layer, and the single-layer photoresist layer can be formed with an opening for accommodating the light-emitting chip 1B. The following embodiments can all be changed in the same way, and will not be repeated below.

[0046] According to a simulation result, compared with directly disposing the light-emitting chip on the circuit substrate, in this embodiment, by disposing a reflective pixel definition layer 200 and a dam layer 202 around the light-emitting chip 1B, the brightness can be increased from 100% to 161% and the luminous flux can be increased from 100% to 108%.

[0047] Please refer to Figure 6 , the main differences between the light-emitting device 2C and Figure 5 the light-emitting device 2B are described hereinafter. In the light-emitting device 2C, the at least one light-collecting element further includes a lens element 30, and the lens element 30 is disposed above the dam layer 202 and the light-emitting chip 1B. The material of the lens element 30 may include photoresist, and the lens element 30 may be formed by means of molding, exposure and development, imprinting, or the like, but is not limited thereto. In some embodiments, a filling layer 32 may be disposed on the filling layer 25 and the light-emitting chip 1B and located in the first opening A1 and the second opening A2. The top surface T32 of the filling layer 32 may be flush with the top surface T202 of the dam layer 202 to provide a plane for carrying the lens element 30. The material of the filling layer 32 may refer to the material of the filling layer 25, which will not be repeated herein.

[0048] In other embodiments, although not shown, a single filling layer may be used to replace the filling layer 25 and the filling layer 32.

[0049] By disposing the lens element 30, the light emitted from the light-emitting device 2C can be narrowed or concentrated by refraction, thereby increasing the brightness of the light-emitting device 2C or reducing the divergence angle of the light. According to a simulation result, compared with directly disposing the light-emitting chip on the circuit substrate, in this embodiment, by disposing at least one light-collecting element (for example, the filling layer 32, the dam layer 202, and the lens element 30) above the light-emitting chip 1B and disposing a reflective pixel definition layer 200 around the light-emitting chip 1B, the brightness can be increased from 100% to 277% and the luminous flux can be increased from 100% to 103%.

[0050] Please refer to Figure 7 , the light-emitting device 2D and Figure 5The main differences of the light-emitting device 2B are described below. The light-emitting device 2D does not include the dam layer 202, and the filling layer 25 fills, for example, the space in the first opening A1 that is not occupied by the light-emitting chip 1B. The at least one light-collecting element includes a reflector cup element 34, and the reflector cup element 34 is disposed above the pixel definition layer 200 and the light-emitting chip 1B. For example, the light-emitting device 2D may further include an adhesive layer 35, and the reflector cup element 34 may be joined to the pixel definition layer 200 through the adhesive layer 35, but not limited thereto. In other embodiments, the reflector cup element 34 may be fixed to the pixel definition layer 200 through other fixing mechanisms (such as a snap-fit structure or other mechanical components). The reflector cup element 34 may be a parabolic reflector cup, but not limited thereto. The material of the reflector cup element 34 may include an acrylic-based resin, but not limited thereto. The material of the adhesive layer 35 may refer to the material of the filling adhesive layer 28, which will not be repeated herein.

[0051] By the arrangement of the reflector cup element 34, refraction can be used to narrow or concentrate the light emitted from the light-emitting device 2D, thereby increasing the brightness of the light-emitting device 2D, reducing the divergence angle of the light, or changing the light pattern. In some embodiments, the brightness or light pattern can be changed by adjusting the maximum width W34 of the reflector cup element 34. For example, the maximum width W34 of the reflector cup element 34 may be 100 micrometers (μm) or 150 μm, but not limited thereto. According to a simulation result, compared with directly disposing the light-emitting chip on the circuit board, in this embodiment, by disposing at least one light-collecting element (such as the reflector cup element 34) above the light-emitting chip 1B and disposing a reflectable pixel definition layer 200 around the light-emitting chip 1B, the brightness can be increased from 100% to 984% and the luminous flux can be increased from 100% to 245%. In addition, if the maximum width W34 of the reflector cup element 34 is increased (for example, the maximum width W34 is increased from 100 μm to 150 μm), the brightness can be increased from 100% to 2507% and the luminous flux can be increased from 100% to 180%.

[0052] Please refer to Figure 8 , the main differences between the light-emitting device 2E and Figure 7 the light-emitting device 2D are described below. In the light-emitting device 2E, the surface of the reflector cup element 34E facing the light-emitting chip 1B has a cavity C that overlaps with the light-emitting chip 1B. There is, for example, air in the cavity C.

[0053] By designing the cavity C, the probability that the light emitted from the light-emitting chip 1B directly exits the reflector cup element 34E can be reduced, and the refraction and reflection of light can be utilized to effectively concentrate the light, thereby improving the brightness of the light-emitting device 2D. According to a simulation result, compared with directly disposing the light-emitting chip on the circuit board, in this embodiment, by disposing at least one light-collecting element (e.g., the reflector cup element 34E) above the light-emitting chip 1B and disposing a reflectable pixel definition layer 200 around the light-emitting chip 1B, the brightness can be increased from 100% to 1344% and the luminous flux can be increased from 100% to 250%.

[0054] Please refer to Figure 9 , the main differences between the light-emitting device 2F and Figure 7 the light-emitting device 2D are described below. In the light-emitting device 2F, the at least one light-collecting element further includes a lens element 36, and the lens element 36 is disposed on the reflector cup element 34. The material of the lens element 36 may refer to the material of the aforementioned lens element 30, which will not be repeated here.

[0055] The design of disposing the lens element 36 on the reflector cup element 34 not only helps to further improve the brightness of the light-emitting device 2F but also helps to reduce the overall area of the light-collecting element, making it more suitable for high-resolution products. According to a simulation result, compared with directly disposing the light-emitting chip on the circuit board, in this embodiment, by disposing at least one light-collecting element (e.g., the reflector cup element 34 and the lens element 36) above the light-emitting chip 1B and disposing a reflectable pixel definition layer 200 around the light-emitting chip 1B, the brightness can be increased from 100% to 4666% and the luminous flux can be increased from 100% to 178%.

[0056] In summary, in the embodiments of the present disclosure, the bonding ends of the light-emitting chips can be located on the same side of the light-emitting chips by the mutual arrangement relationship among the filling layer, the first electrode, the second electrode, and the reflective layer, thereby reducing the difficulty of electrical measurement after mass transfer and making it easy to monitor the yield.

[0057] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

[0058] Although the embodiments of the present disclosure and their advantages have been disclosed above, it should be understood that any person with ordinary knowledge in the relevant technical field can make changes, substitutions, and modifications without departing from the spirit and scope of the present disclosure. Moreover, the features between various embodiments can be arbitrarily mixed and replaced to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufactures, compositions of matter, devices, methods, and steps in the specific embodiments described in the specification. Any person skilled in the relevant technical field can understand the processes, machines, manufactures, compositions of matter, devices, methods, and steps developed currently or in the future from the disclosed content of the present disclosure. As long as they can perform substantially the same functions or achieve substantially the same results in the embodiments described herein, they can be used according to the present disclosure. Therefore, the protection scope of the present disclosure includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods, and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the present disclosure also includes the combination of each claim and embodiment. The protection scope of the present disclosure shall be determined by the scope defined by the appended claims.

Claims

1. A light-emitting chip, characterized in that: include: Light-emitting unit, comprising: A light emitting diode comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer stacked in sequence; and A filling layer surrounding the light emitting diode; A first electrode, disposed on a first side of the light emitting unit and electrically connected to the first-type semiconductor layer; A second electrode, disposed at a second side of the light emitting unit and electrically connected to the second-type semiconductor layer, wherein a material of the second electrode comprises a transparent conductive material; and A reflective layer is disposed on a side surface of the filling layer, wherein in a cross-sectional view, the side surface of the filling layer is connected to a top surface of the filling layer.

2. The light-emitting chip according to claim 1, characterized in that: The second electrode is electrically connected to the reflective layer.

3. The light-emitting chip according to claim 2, characterized in that: The reflective layer comprises: A first portion is disposed on a side surface of the filling layer; and The second part is arranged on the bottom surface of the filling layer.

4. The light-emitting chip according to claim 3, characterized in that: An included angle between the first portion and the second portion is greater than or equal to 100 degrees and less than or equal to 170 degrees.

5. The light-emitting chip according to claim 3, characterized in that: The second electrode is disposed on a top surface of the second-type semiconductor layer and on the top surface of the filling layer and is connected to the first portion.

6. The light-emitting chip according to claim 1, characterized in that: The second electrode is electrically insulated from the reflective layer.

7. The light-emitting chip according to claim 6, characterized in that: An included angle between the first electrode and the reflective layer is greater than or equal to 100 degrees and less than or equal to 170 degrees.

8. The light-emitting chip according to claim 6, characterized in that: The first electrode is disposed on a bottom surface of the first-type semiconductor layer and a bottom surface of the filling layer and is connected to the reflective layer.

9. The light-emitting chip according to claim 1, characterized in that: In the cross-sectional view, the light emitting unit has a first width and a second width on the first side and the second side respectively, and the second width is greater than the first width.

10. The light emitting chip according to claim 1, characterized in that: The material of the reflective layer includes silver, aluminum, tin, indium, gold or a combination thereof.

11. A light emitting device, characterized in that: include: Light-emitting chip, including: Light-emitting unit, comprising: A light emitting diode comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer stacked in sequence; and A filling layer surrounding the light emitting diode; A first electrode, disposed on a first side of the light emitting unit and electrically connected to the first-type semiconductor layer; A second electrode, disposed at a second side of the light emitting unit and electrically connected to the second-type semiconductor layer, wherein a material of the second electrode comprises a transparent conductive material; and a reflective layer disposed on a side surface of the filling layer, wherein in a cross-sectional view, the side surface of the filling layer is connected to a top surface of the filling layer; and At least one light collecting element is located above the light emitting chip.

12. The light emitting device according to claim 11, characterized in that: Also includes: A circuit substrate, wherein the light emitting chip and the at least one light collecting element are disposed on the circuit substrate, and the circuit substrate comprises a first pad electrically connected to the first electrode and a second pad electrically connected to the second electrode.

13. The light emitting device according to claim 12, characterized in that: Also includes: The pixel definition layer is located on the circuit substrate and has a first opening, wherein the light emitting chip is located in the first opening.

14. The light emitting device according to claim 13, characterized in that: The at least one light collecting element comprises: The bank layer is located on the pixel definition layer and has a second opening overlapping with the first opening.

15. The light emitting device according to claim 14, characterized in that: The first pad and the second pad are located in the first opening, the second electrode is also disposed on the top surface of the filling layer, and the second electrode is electrically connected to the second pad through the reflective layer.

16. The light emitting device according to claim 14, characterized in that: The first pad is located in the first opening, the pixel definition layer also has a third opening partially exposing the second pad, the light-emitting device also includes a connecting line located on the pixel definition layer and in the third opening, and the second electrode is electrically connected to the second pad through the connecting line.

17. The light emitting device according to claim 14, characterized in that: The at least one light collecting element includes a lens element, and the lens element is disposed above the bank layer and the light emitting chip.

18. The light emitting device according to claim 13, characterized in that: The at least one light collecting element includes a reflective cup element, and the reflective cup element is disposed above the pixel definition layer and the light emitting chip.

19. The light emitting device according to claim 18, characterized in that: A surface of the reflective cup element facing the light emitting chip has a cavity overlapping the light emitting chip.

20. The light emitting device according to claim 18, characterized in that: The at least one light collecting element further comprises a lens element, and the lens element is disposed on the reflective cup element.

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