Photoelectric device, preparation method of photoelectric device and electronic equipment

Abstract

The invention discloses a photoelectric device, a preparation method of the photoelectric device and electronic equipment, the photoelectric device comprises a first electrode, a second electrode and an active layer, the first electrode and the second electrode are oppositely arranged, the active layer is arranged between the first electrode and the second electrode, and the active layer comprises a plurality of sub-layers which are stacked in sequence. Each sub-layer comprises at least one first unit and at least one second unit, the material of the first unit comprises quantum dots, the material of the second unit comprises one or more of first metal and first metal oxide, the forward projections of the first units of any two adjacent sub-layers on the first electrode are at least partially not overlapped, and the forward projections of the second units of any two adjacent sub-layers on the first electrode are not partially overlapped. The injection difficulty of current carriers can be reduced, and the device efficiency of the photoelectric device is effectively improved; when the photoelectric device is applied to the electronic equipment, the display effect of the electronic equipment is improved, and the service life of the electronic equipment is prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technologies, and particularly to an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device. Background Art

[0002] Optoelectronic devices refer to a class of devices made using the optoelectronic effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. Taking a light-emitting device as an example, the light-emitting device includes but is not limited to an organic light-emitting diode 10 (Organic Light-Emitting Diode, OLED) and a quantum dot light-emitting diode (Quantum Dot Light-Emitting Diodes, QLED). The OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer. Among them, the anode and the cathode are oppositely arranged, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of the OLED / QLED is: electrons are injected from the cathode of the device into the light-emitting region, holes are injected from the anode of the device into the light-emitting region, electrons and holes recombine in the light-emitting region to form excitons, and the recombined excitons release photons in the form of radiative transition, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in terms of performance indicators and also shown great potential for application development. However, there are still deficiencies at present. For example, the device efficiency of optoelectronic devices needs to be further improved. Therefore, how to further improve the device efficiency of optoelectronic devices is of great significance to the application and development of optoelectronic devices. Summary of the Invention

[0004] The present application provides an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device to improve the device lifetime of the optoelectronic device.

[0005] In a first aspect, the present application provides an optoelectronic device, which includes:

[0006] A first electrode and a second electrode which are oppositely arranged; and

[0007] An active layer, arranged between the first electrode and the second electrode;

[0008] Wherein, the active layer includes a plurality of sub-layers stacked in sequence, each sub-layer includes at least one first unit and at least one second unit, the material of the first unit includes quantum dots, and the material of the second unit includes one or more of a first metal and a first metal oxide; the forward projections of the first units of any two adjacent sub-layers on the first electrode at least partially do not overlap.

[0009] Second aspect, the present application provides a method for manufacturing an optoelectronic device, including the following steps:

[0010] Providing a first electrode, and forming an active layer on one side of the first electrode; and

[0011] Forming a second electrode on the side of the active layer away from the first electrode;

[0012] Wherein, the method for forming the active layer includes the steps of: sequentially forming a plurality of sub-layers on one side of the first electrode, and the method for forming each sub-layer includes the steps of: predefining at least one first region and at least one second region; and depositing quantum dots in the first region to form a first unit, and depositing one or more of a first metal and a first metal oxide in the second region to form a second unit;

[0013] The positive projections of the first units of any two adjacent sub-layers on the first electrode do not overlap at least partially.

[0014] Third aspect, the present application provides an electronic device, which includes an optoelectronic device as described in any one of the first aspect, or the electronic device includes an optoelectronic device manufactured by the manufacturing method as described in any one of the second aspect.

[0015] The present application provides an optoelectronic device, a method for manufacturing an optoelectronic device, and an electronic device, having the following technical effects:

[0016] In the optoelectronic device of the embodiment of the present application, the active layer includes a plurality of sub-layers stacked in sequence, each sub-layer includes a first unit (the material includes quantum dots) and a second unit (the material includes one or more of a first metal and a first metal oxide), and the positive projections of the first units of any two adjacent sub-layers on the first electrode do not overlap at least partially. On the one hand, since the material of the second unit has a low resistance, the loss rate of electrons or holes passing through the second unit is very low, which is beneficial to reducing the injection difficulty of carriers, enabling the optoelectronic device to have a good carrier injection level, and being able to reduce the working voltage of the optoelectronic device; on the other hand, optical resonance is formed between the plurality of first units, increasing the microcavity effect, thereby improving the device efficiency of the optoelectronic device. Description of the Drawings

[0017] The following combines the drawings and describes the specific embodiments of the present application in detail, and the technical solutions and other beneficial effects of the present application will be obvious.

[0018] Figure 1 It is a schematic structural diagram of the first optoelectronic device provided by the embodiment of the present application.

[0019] Figure 2Schematic diagram of the first seed layer provided by the embodiment of the present application.

[0020] Figure 3 Schematic diagram of the second seed layer provided by the embodiment of the present application.

[0021] Figure 4 Schematic diagram of the third seed layer provided by the embodiment of the present application.

[0022] Figure 5 Schematic diagram of the fourth seed layer provided by the embodiment of the present application.

[0023] Figure 6 Schematic diagram of the second optoelectronic device provided by the embodiment of the present application.

[0024] Figure 7 Schematic diagram of the third optoelectronic device provided by the embodiment of the present application.

[0025] Figure 8 Schematic diagram of the fourth optoelectronic device provided by the embodiment of the present application.

[0026] The reference numerals are as follows:

[0027] 10: optoelectronic device, 101: first electrode, 102: second electrode, 103: active layer, 104: electron functional layer, 105: hole functional layer, 1031: sub-layer, 10311: first unit, 10312: second unit, 1051: hole injection layer, 1052: hole transport layer. Detailed implementation manners

[0028] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0029] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present invention. The preferred implementation methods and materials described herein are only for illustrative purposes and do not limit the content of the present application.

[0030] It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of the present application may exist in a range form; it should be understood that the description in a range form is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present invention; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the counted range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0031] In the description of the present application, the term "comprising" means "including but not limited to".

[0032] The term "at least one (kind)" means one (kind) or more than one (kind). The term "at least one (kind)", "at least one (kind) of the following" or similar expressions refer to any combination of these kinds (kinds), including any combination of a single kind (kind) or a plural number of kinds (kinds). For example, "at least one (kind) of a, b, or c" or "at least one (kind) of a, b, and c" can both be expressed as: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can each be single or multiple.

[0033] "Multiple", "a plurality of" or similar expressions mean two (kinds) or more than two (kinds), for example, it can be two (kinds), three (kinds), four (kinds), five (kinds), six (kinds), seven (kinds), eight (kinds), nine (kinds), ten (kinds), twenty (kinds), fifty (kinds), one hundred (kinds), or one thousand (kinds).

[0034] In this application, descriptions such as "layer A is formed on one side of layer B", "layer A is formed on the side of layer B away from layer C", or similar descriptions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or it can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B", "layer A is disposed on the side of layer B away from layer C" can mean that layer A is in direct contact with layer B, or it can mean that other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0035] The selection range of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items. The said any and all combinations include combinations of any two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A + B. Another example, for the technical solution of "A, and / or, B, and / or, C, and / or, D", it includes any one of A, B, C, and D (that is, the technical solutions connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, it includes combinations of any two or any three of A, B, C, and D, and also includes the four-item combination of A, B, C, and D (that is, the technical solutions connected by "logical and").

[0036] The term "particle size" refers to the diameter of a particle.

[0037] The term "length" refers to the dimension of an object in the X direction.

[0038] The term "width" refers to the dimension of an object in the Y direction.

[0039] The term "thickness" refers to the dimension of an object in the Z direction.

[0040] In optoelectronic devices, the number of excitons (hole-electron pairs) that an active layer can accommodate is related to the volume of the active layer. On the premise that the active layer has a single-layer structure, other dimensions of the active layer except for the thickness are constant values, and the material of the active layer is quantum dots, as the thickness of the active layer increases, the volume of the active layer also increases, and the exciton accommodation capacity of the active layer will also increase. However, if the thickness of the active layer is too thick, there will be a problem of difficult carrier injection, resulting in an increase in the voltage of the optoelectronic device and a decrease in the device efficiency. However, if the thickness of the active layer is relatively thin, the number of excitons that can be accommodated is limited.

[0041] Based on this, embodiments of the present application provide an optoelectronic device, which includes but is not limited to a light-emitting device, a photovoltaic cell, or a photodetector. As Figures 1 to 8 shown, along the Z direction, the optoelectronic device 10 includes a first electrode 101, a second electrode 102, and an active layer 103. The first electrode 101 and the second electrode 102 are disposed opposite to each other, and the active layer 103 is disposed between the first electrode 101 and the second electrode 102. The active layer 103 includes a plurality of sub-layers 1031 stacked in sequence. Each sub-layer 1031 includes at least one first unit 10311 and at least one second unit 10312. The material of the first unit 10311 includes quantum dots, and the material of the second unit 10312 includes one or more of a first metal and a first metal oxide. And the forward projections of the first units 10311 of any two adjacent sub-layers 1031 on the first electrode 101 at least partially do not overlap.

[0042] It can be understood that when the optoelectronic device 10 is a light-emitting device, the active layer 103 is a light-emitting layer; when the optoelectronic device 10 is a photovoltaic cell, the active layer 103 is a light absorption layer. The sizes of the first unit 10311 and the second unit 10312 may be the same or different. Each sub-layer 1031 is, for example, composed of at least one first unit 10311 and at least one second unit 10312, and / or the material of the first unit 10311 is, for example, quantum dots, and / or the material of the second unit 10312 is, for example, one or more of a first metal and a first metal oxide.

[0043] In the optoelectronic device 10 according to an embodiment of the present application, the active layer 103 includes a plurality of sub-layers 1031 stacked in sequence along the Z direction. Each sub-layer 1031 includes a first unit 10311 and a second unit 10312, and the forward projections of the first units 10311 of any two adjacent sub-layers 1031 on the first electrode 101 at least partially do not overlap. On the one hand, since the material of the second unit 10312 has a low resistance, the loss rate of electrons or holes passing through the second unit 10312 is very low, which is beneficial to reducing the injection difficulty of carriers, enabling the optoelectronic device 10 to have a good carrier injection level, and being able to reduce the operating voltage of the optoelectronic device 10. On the other hand, optical resonance is formed between the plurality of first units 10311, increasing the microcavity effect, thereby improving the device efficiency of the optoelectronic device 10. It can be understood that when the optoelectronic device 10 is a light-emitting device, each first unit 10311 is a light-emitting center, and interference occurs between the lights emitted by the plurality of first units 10311 to form optical resonance, effectively enhancing the light extraction efficiency.

[0044] In order to further improve the device efficiency and device lifetime of the optoelectronic device 10, in some embodiments of the present application, the first unit 10311 and the second unit 10312 are alternately arranged; and / or, the forward projections of the second units 10312 of any two adjacent sub-layers 1031 on the first electrode 101 at least partially do not overlap.

[0045] In some embodiments of the present application, as Figure 2 and Figure 3 shown, in each sub-layer 1031, the first unit 10311 and the second unit 10312 are alternately arranged in the X direction.

[0046] In some other embodiments of the present application, as Figure 4 shown, in each sub-layer 1031, the first unit 10311 and the second unit 10312 are alternately arranged in the Y direction.

[0047] In some other embodiments of the present application, as Figure 5 shown, in each sub-layer 1031, the first unit 10311 and the second unit 10312 are alternately arranged both in the X direction and in the Y direction, that is, the first unit 10311 and the second unit 10312 are respectively arranged in an array.

[0048] In order to further balance reducing the injection difficulty of carriers and leakage current, in some embodiments of the present application, the forward projections of the first units 10311 of any two adjacent sub-layers 1031 on the first electrode 101 completely do not overlap; and / or, the forward projections of the second units 10312 of any two adjacent sub-layers 1031 on the first electrode 101 completely do not overlap.

[0049] In order to further reduce the loss rate of electrons or holes passing through the second unit 10312 and further reduce the operating voltage of the optoelectronic device 10, in some embodiments of the present application, the resistivity of the material of the second unit 10312 at 20 °C to 80 °C is lower than 10 -3 Ω·m, for example, lower than 10 -4 Ω·m, lower than 10 -5 Ω·m, lower than 10 -6 Ω·m, lower than 10 -7 Ω·m or lower than 10 -8 Ω·m. Wherein, the first metal includes but is not limited to one or more selected from Au, Ag, Cu, Al, Pt, Rh, Cr, Ni, Sn, Nb, and Fe; and / or, the first metal oxide can be doped or undoped. The doped first metal oxides include but are not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO). The undoped first metal oxides include but are not limited to one or more of SnO2, ZnO, and In2O3.

[0050] In the optoelectronic device 10 of the embodiments of the present application, the emission color of the quantum dots includes but is not limited to red, green, or blue. The average particle size of the quantum dots is, for example, 2 nm to 25 nm, exemplified as 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, 22 nm, 25 nm, or a value between any two of the foregoing values.

[0051] In some embodiments of the present application, the quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. Wherein, the shell layer of the core-shell structure quantum dots includes one or more layers.

[0052] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell quantum dots, or the material of the shell of the core-shell quantum dots includes, but is not limited to, at least one of II-VI group compounds, III-VI group compounds, III-V group compounds, IV-VI group compounds, or I-III-VI group compounds. Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.It should be noted that for the materials of the aforementioned single-component quantum dots, or the cores of core-shell quantum dots, or the shells of core-shell quantum dots, the chemical formulas provided only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn, and Se. If the content of each element is to be expressed, it corresponds to Cd. x Zn 1-x Se, 0 < x < 1.

[0053] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0054] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0055] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations, and organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) nNH3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ or Eu 2+ ,X is a halogen anion, including but not limited to Cl - 、Br - or I - 。

[0056] To improve the solution processability of the quantum dots, in some embodiments of the present application, ligands are also connected to the surface of the quantum dots. The ligands can be common ligands in the art, including but not limited to fatty carboxylic acid ligands of C1-C 30 , aromatic carboxylic acid ligands of C6-C 30 , fatty thiol ligands of C1-C 30 , thiol aromatic ligands of C6-C 30 , fatty amine ligands of C1-C 30 , aromatic amine ligands of C6-C 30 , fatty phosphine ligands of C1-C 30 , aromatic phosphine ligands of C6-C 30 and aromatic phosphate ligands of C6-C 30 and one or more of halogen ligands.

[0057] Among them, the fatty carboxylic acid ligands of C1-C 30 include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; the aromatic carboxylic acid ligands of C6-C 30 include but are not limited to one or more of benzoic acid, dibenzoic acid, and 1-naphthoic acid. The fatty thiol ligands of C1-C 30 include but are not limited to one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol, and octadecanethiol. The thiol aromatic ligands of C6-C 30 include but are not limited to one or more of benzenethiol, tritylmethanethiol, and p-terphenyl-4,4”-dithiol. The fatty amine ligands of C1-C 30The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and oleylamine, C6-C 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indanylpropylamine, 4-octylaniline, and benzidine. C1-C 30 The fatty phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6-C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6-C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0058] In order to balance improving the comprehensive performance of the optoelectronic device 10 and reducing the manufacturing cost of the optoelectronic device 10, in some embodiments of the present application, the thickness of the active layer 103 is 10 nm to 100 nm, for example, it can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a value between any two of the foregoing values.

[0059] In order to further improve the device efficiency of the optoelectronic device 10 and reduce the operating voltage of the optoelectronic device 10, in some embodiments of the present application, the thickness of each sub-layer 1031 is 5 nm to 50 nm, for example, it can be 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, or a value between any two of the foregoing values.

[0060] In order to further improve the device efficiency of the optoelectronic device 10, in some embodiments of the present application, for each sub-layer 1031, the total area of the forward projection of the first unit 10311 on the first electrode 101 accounts for 50% to 90% of the area of the forward projection of the sub-layer 1031 on the first electrode 101, for example, it can be 50%, 60%, 70%, 80%, 90%, or a value between any two of the foregoing values.

[0061] In some embodiments of the present application, the materials of the first electrode 101 and the second electrode 102 are independently selected from one or more of a second metal, a carbon material, and a fourth metal oxide, wherein the second metal includes, but is not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg; the carbon material includes, but is not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the fourth metal oxide may be doped or undoped. The doped fourth metal oxide includes, but is not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO); the undoped fourth metal oxide includes, but is not limited to, one or more of TiO2, SnO2, ZnO, and In2O3.

[0062] It should be noted that the first electrode 101 and the second electrode 102 may also be composite electrodes respectively. The composite electrode has a structure similar to a "sandwich", where the materials of the upper layer and the lower layer are respectively doped or undoped fourth metal oxides, and the material of the middle layer is a second metal. Examples include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thicknesses of the first electrode 101 and the second electrode 102 are, for example, independently selected from 20 nm to 300 nm.

[0063] In order to further improve the comprehensive performance of the optoelectronic device 10, in some embodiments of the present application, the optoelectronic device 10 further includes an electron functional layer 104. The electron functional layer 104 is disposed between the cathode and the active layer 103. One of the first electrode 101 and the second electrode 102 is an anode, and the other is a cathode. As an example, as Figure 1 and Figures 6 to 8 shown, the first electrode 101 is an anode and the second electrode 102 is a cathode, and the electron functional layer 104 is disposed between the second electrode 102 and the active layer 103.

[0064] The thickness of the electronic functional layer 104 is, for example, 10 nm to 200 nm. The electronic functional layer 104 may be a single-layer structure or a multi-layer structure; when the electronic functional layer 104 is a multi-layer structure, the electronic functional layer 104 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 104 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode than the hole blocking layer; for the electronic functional layer including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode than the electron transport layer; for the electronic functional layer including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode than the hole blocking layer.

[0065] In some embodiments of the present application, the material of the electronic functional layer 104 includes one or more of an undoped first inorganic compound and a doped second inorganic compound. Among them, the undoped first inorganic compound includes one or more of an undoped second metal oxide, a IIB-VIA group semiconductor material, a IIIA-VA group semiconductor material, and a IB-IIIA-VIA group semiconductor material. The undoped second metal oxide includes, but is not limited to, one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and / or the IIB-VIA group semiconductor material includes, but is not limited to, one or more of ZnS, ZnSe, and CdS, and / or the IIIA-VA group semiconductor material includes, but is not limited to, one or more of InP and GaP, and / or the IB-IIIA-VIA group semiconductor material includes, but is not limited to, one or more of CuInS and CuGaS.

[0066] The doped second inorganic compound includes a third metal oxide doped with a first doping element. The third metal oxide includes, but is not limited to, one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The first doping element includes, but is not limited to, one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn. The molar percentage of the first doping element in the doped second inorganic compound is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30%, or not higher than 50%. The doped second inorganic compound includes, but is not limited to, one or more of magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide. Examples are Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zrx O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O, In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0 < x ≤ 0.5.

[0067] It should be noted that when the electronic functional layer 104 includes multiple materials and the electronic functional layer 104 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or some in the same layer. As an example, as Figure 1 and Figures 6 to 8 shown, the electronic functional layer 104 is a single-layer structure, and the electronic functional layer 104 is an electron transport layer.

[0068] In order to further improve the optoelectronic performance and device lifetime of the optoelectronic device 10, in some embodiments of the present application, the optoelectronic device 10 further includes a hole functional layer 105, the hole functional layer 105 is disposed between the anode and the active layer 103, and one of the first electrode 101 and the second electrode 102 is the anode and the other is the cathode; as an example, as Figure 1 and Figures 6 to 8 shown, the first electrode 101 is the anode and the second electrode 102 is the cathode, and the hole functional layer 105 is disposed between the first electrode 101 and the active layer 103.

[0069] The thickness of the hole functional layer 105 is, for example, 10 nm to 200 nm. The hole functional layer 105 can be a single-layer structure or a multi-layer structure. The hole functional layer 105 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 105 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode than the electron blocking layer; for the hole functional layer 105 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode than the electron blocking layer. As an example, as Figure 1 and Figures 6 to 8As shown, the hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 which are sequentially stacked, and the hole injection layer 1051 is closer to the anode than the hole transport layer 1052.

[0070] Among them, the materials of the hole functional layer 105 include, but are not limited to, one or more of undoped third inorganic compounds, doped fourth inorganic compounds, and organic compounds. Among them, the organic compounds include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium oxyphthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD,One or more of those with CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviation: PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviation: Spiro-omeTAD, CAS No. 207739-72-8); and / or, the non-doped third inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2); and / or, the doped fourth inorganic compound is a host inorganic compound doped with a second doping element, and the host inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2), and / or the second doping element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.,

[0071] It can be understood that when the hole functional layer 105 contains multiple materials and the hole functional layer 105 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or part of them in the same layer. As an example, as Figure 1 and Figures 6 to 8 shown, when the hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 arranged in a stacked manner, the materials of the hole functional layer 105 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer 1051 is PEDOT:PSS, and the material of the hole transport layer 1052 is TFB.

[0072] The embodiment of the present application also provides a preparation method of an optoelectronic device, which can be used to prepare any one of the foregoing optoelectronic devices. The preparation method of the optoelectronic device includes the following steps:

[0073] S1. Provide a first electrode and form an active layer on one side of the first electrode;

[0074] S2. Form a second electrode on the side of the active layer away from the first electrode.

[0075] In the method for manufacturing an optoelectronic device according to an embodiment of the present application, the structural compositions of the first electrode, the active layer, and the second electrode all refer to the descriptions above.

[0076] Among them, the method for forming the active layer includes the steps of: sequentially forming a plurality of sub-layers on one side of the first electrode; the method for forming each sub-layer includes the steps of: predefining at least one first region and at least one second region; and depositing quantum dots in the first region to form a first unit, and depositing one or more of a first metal and a first metal oxide in the second region to form a second unit; the forward projections of the first units of any two adjacent sub-layers on the first electrode at least partially do not overlap. It should be noted that the sub-layers, the first unit, and the second unit all refer to the descriptions above, and the selection ranges of the quantum dots, the first metal, and the first metal oxide also refer to the descriptions above.

[0077] The step of depositing quantum dots in the first region to form a first unit and the step of depositing a first metal and a first metal oxide in the second region to form a second unit are carried out in sequence one after another. For example: first form the first unit and then form the second unit, or first form the second unit and then form the first unit. The methods for depositing the quantum dots and the materials of the second unit respectively include but are not limited to chemical methods and / or physical methods. Among them, the chemical methods include but are not limited to one or more of chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation; the physical methods include but are not limited to physical coating methods and solution methods. The physical coating methods include but are not limited to one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. The solution methods include but are not limited to one or more of spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating.

[0078] In order to reduce the damage of high temperature to quantum dots and simplify the preparation process of sub-layers, in some embodiments of the present application, the step of depositing the first metal and the first metal oxide in the second region to form the second unit is prior, and the step of depositing quantum dots in the first region to form the first unit is subsequent; the deposition method of the material of the second unit is physical coating, and the deposition method of the material of the second unit is, for example, thermal evaporation coating; the deposition method of quantum dots is solution method. It should be noted that when the first unit is formed by the solution method, a drying treatment process needs to be added to transform the wet film into a solidified film, and the drying treatment process includes but is not limited to one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment, and microwave irradiation annealing treatment.

[0079] In order to further improve the comprehensive performance of the optoelectronic device, in some embodiments of the present application, the preparation method of the optoelectronic device further includes the step of forming an electron functional layer between the cathode and the active layer. The structural composition of the electron functional layer refers to the description above. That is, when the optoelectronic device is a normal structure, the first electrode is the anode and the second electrode is the cathode. Before step S2, the preparation method of the optoelectronic device further includes the step of forming an electron functional layer on the side of the active layer away from the first electrode; the second electrode is formed on the side of the electron functional layer away from the active layer. When the optoelectronic device is an inverted structure, the first electrode is the cathode and the second electrode is the anode. Before the step of forming the active layer on one side of the first electrode, the preparation method of the optoelectronic device further includes the step of forming an electron functional layer on one side of the first electrode; the active layer is formed on the side of the electron functional layer away from the first electrode.

[0080] In order to further improve the comprehensive performance of the optoelectronic device, in some embodiments of the present application, the preparation method of the optoelectronic device further includes the step of forming a hole functional layer between the anode and the active layer. The structural composition of the hole functional layer refers to the description above. That is, when the optoelectronic device is a normal structure, the first electrode is the anode and the second electrode is the cathode. Before the step of forming the active layer on one side of the first electrode, the preparation method of the optoelectronic device further includes the step of forming a hole functional layer on one side of the first electrode; the active layer is formed on the side of the hole functional layer away from the first electrode. When the optoelectronic device is an inverted structure, the first electrode is the cathode and the second electrode is the anode. Before step S2, the preparation method of the light-emitting device further includes the step of forming a hole functional layer on the side of the active layer away from the first electrode; the second electrode is formed on the side of the hole functional layer away from the active layer.

[0081] It should be noted that, in addition to the active layer, the preparation methods of other functional film layers in the optoelectronic device include, but are not limited to, the chemical method and / or the physical method. After the preparation of each functional film layer of the optoelectronic device is completed, a packaging treatment process is also required. The packaging treatment can be carried out by using common machine packaging or manual packaging. In the environment of the packaging treatment, the oxygen content and the water content are both lower than 0.1 ppm to ensure the stability of the light-emitting device.

[0082] The embodiment of the present application also provides an electronic device. The electronic device includes any one of the optoelectronic devices in the embodiment of the present application, or the electronic device includes an optoelectronic device prepared by any one of the preparation methods in the embodiment of the present application. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video telephone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical device, a camera, a game console, a digital camera, a car navigation device, an electronic billboard, an automated teller machine, a smart bracelet, a smart watch, a Virtual Reality (VR) device or a wearable device.

[0083] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0084] Example 1

[0085] This embodiment provides an optoelectronic device and a preparation method thereof. The optoelectronic device is a quantum dot light-emitting diode with a normal structure, such as Figure 1As shown, along the Z direction, the optoelectronic device 10 includes a first electrode 101, a hole functional layer 105, an active layer 103, an electron functional layer 104, and a second electrode 102 that are sequentially stacked. Among them, the first electrode 101 is an anode and the second electrode 102 is a cathode; the hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 that are stacked, and the hole injection layer 1051 is closer to the first electrode 101 than the hole transport layer 1052; the electron functional layer 104 is a single-layer structure; the active layer 103 includes two sub-layers 1031 (a first sub-layer and a second sub-layer) that are sequentially stacked, the first sub-layer is closer to the hole transport layer 1052 than the second sub-layer, and the size of the active layer 103 is: length is 2×10 6 nm, width is 0.4×10 6 nm, and thickness is 60 nm.

[0086] The thickness of the first sub-layer is 30 nm, and the first sub-layer is composed of one first unit 10311 and two second units 10312. In the first sub-layer, the first unit 10311 and the second unit 10312 are alternately arranged. As Figure 2 shown, in the X direction, one second unit 10312, one first unit 10311, and one second unit 10312 are arranged in sequence, and the first unit 10311 and the second unit 10312 have the same size. The area of the first unit 10311 in the first sub-layer projected onto the first electrode 101 accounts for 1 / 3 of the area of the first sub-layer projected onto the first electrode 101, and the total area of the second unit 10312 in the first sub-layer projected onto the first electrode 101 accounts for 2 / 3 of the area of the first sub-layer projected onto the first electrode 101.

[0087] The thickness of the second sub-layer is 30 nm, and the second sub-layer is composed of two first units 10311 and one second unit 10312. In the second sub-layer, the first unit 10311 and the second unit 10312 are alternately arranged. As Figure 3 shown, in the X direction, one first unit 10311, one second unit 10312, and one first unit 10311 are arranged in sequence, and the first unit 10311 and the second unit 10312 have the same size. The total area of the first unit 10311 in the second sub-layer projected onto the first electrode 101 accounts for 2 / 3 of the area of the second sub-layer projected onto the first electrode 101, and the area of the second unit 10312 in the second sub-layer projected onto the first electrode 101 accounts for 1 / 3 of the area of the second sub-layer projected onto the first electrode 101.

[0088] The first unit 10311 of the first sub-layer and the first unit 10311 of the second sub-layer are arranged in a dislocation manner, and only partial edge overlap exists between the forward projection of the first unit 10311 of the first sub-layer on the first electrode 101 and the forward projection of the first unit 10311 of the second sub-layer on the first electrode 101. The second unit 10312 of the first sub-layer and the second unit 10312 of the second sub-layer are arranged in a dislocation manner, and only partial edge overlap exists between the forward projection of the second unit 10312 of the first sub-layer on the first electrode 101 and the forward projection of the first unit 10311 of the second layer on the first electrode 101.

[0089] The material of the first unit 10311 is ZnCdSe / ZnSe / ZnS, the emission color is blue, and the thickness of the first unit 10311 is 25 nm; the material of the second unit 10312 is ITO, and the thickness of the second unit 10312 is 25 nm.

[0090] Except for the active layer 103, the materials and thicknesses of the other layers of the optoelectronic device 10 are as follows:

[0091] The material of the first electrode 101 is ITO, and the thickness of the first electrode 101 is 14 nm;

[0092] The material of the second electrode 102 is Ag, and the thickness of the second electrode 102 is 35 nm;

[0093] The material of the electron functional layer 104 is Zn 0.85 Mg 0.15 O (average particle size is 5 nm), and the thickness is 50 nm;

[0094] The material of the hole injection layer 1051 is PEDOT:PSS, and the thickness of the hole injection layer 1051 is 30 nm;

[0095] The material of the hole transport layer 1052 is TFB, and the thickness of the hole transport layer 1052 is 35 nm.

[0096] The preparation method of the optoelectronic device in this embodiment includes the following steps:

[0097] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in deionized water for 15 min, in acetone for 15 min, in ethanol for 15 min, and in isopropanol for 15 min in sequence. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate including the first electrode;

[0098] S1.2. Under the air environment of normal temperature and pressure, spin-coat an aqueous solution of PEDOT:PSS with a mass fraction of 2.8% on the side of the first electrode far from the substrate, and then place it in a constant temperature heat treatment at 150 °C to solidify into a film, obtaining a hole injection layer;

[0099] S1.3. Under the nitrogen environment of normal temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer far from the anode, and then place it in a constant temperature heat treatment at 150 °C to solidify into a film, obtaining a hole transport layer;

[0100] S1.4. Predetermine a first region and two second regions on the side of the hole transport layer far from the hole injection layer. The first region is set between the two second regions. Then, in an evaporation chamber with a vacuum degree of 10 -4 Pa, thermally evaporate ITO (temperature 220 °C) in the second region through a mask plate to form a second unit. Then, under the nitrogen environment of normal temperature and pressure, spin-coat a ZnCdSe / ZnSe / ZnS quantum dot - n-octane solution with a concentration of 25 mg / mL in the first region, and then place it in a constant temperature heat treatment at 80 °C to solidify and form a first unit, obtaining a first sub-layer;

[0101] S1.5. Predetermine a second region and two first regions on the side of the first sub-layer far from the hole transport layer. The second region is set between the two first regions. Then, in an evaporation chamber with a vacuum degree of 10 -4 Pa, thermally evaporate ITO (temperature 220 °C) in the second region through a mask plate to form a second unit. Then, under the nitrogen environment of normal temperature and pressure, spin-coat a ZnCdSe / ZnSe / ZnS quantum dot - n-octane solution with a concentration of 25 mg / mL in the first region, and then place it in a constant temperature heat treatment at 80 °C to solidify and form a first unit, obtaining a second sub-layer;

[0102] S1.6. Under the nitrogen environment of normal temperature and pressure, spin-coat a nano-Zn 0.85 Mg 0.15 O-ethanol solution with a concentration of 30 mg / mL on the side of the second sub-layer far from the first sub-layer, and then place it in a constant temperature heat treatment at 80 °C to solidify into a film, obtaining an electron functional layer;

[0103] S1.7. Place the stacked structure completed in step S1.6 in an evaporation chamber with a vacuum degree not higher than 3×10 -4 Pa, thermally evaporate Ag on the side of the electron functional layer far from the second sub-layer through a mask plate to obtain a second electrode, and then encapsulate to obtain an optoelectronic device.

[0104] Example 2

[0105] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the second unit is replaced with "Ag".

[0106] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0107] Embodiment 3

[0108] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the second unit is replaced with "ZnO".

[0109] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0110] Embodiment 4

[0111] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the second unit is replaced with "SnO2".

[0112] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0113] Embodiment 5

[0114] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the second unit is replaced with "Al".

[0115] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0116] Embodiment 6

[0117] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the second unit is replaced with "Cu".

[0118] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0119] Embodiment 7

[0120] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that, as Figure 6As shown, the first sub-layer is composed of a first unit 10311 and a second unit 10312. In the X direction, the first unit 10311 and the second unit 10312 are arranged in sequence. The area of the forward projection of the first unit 10311 of the first sub-layer on the first electrode 101 accounts for 1 / 2 of the area of the forward projection of the first sub-layer on the first electrode 101. The area of the forward projection of the second unit 10312 of the first sub-layer on the first electrode 101 accounts for 1 / 2 of the area of the forward projection of the first sub-layer on the first electrode 101. And the second sub-layer is composed of a first unit 10311 and a second unit 10312. In the X direction, the second unit 10312 and the first unit 10311 are arranged in sequence. The area of the forward projection of the first unit 10311 of the second sub-layer on the first electrode 101 accounts for 1 / 2 of the area of the forward projection of the second sub-layer on the first electrode 101. The area of the forward projection of the second unit 10312 of the second sub-layer on the first electrode 101 accounts for 1 / 2 of the area of the forward projection of the second sub-layer on the first electrode 101. The first unit 10311 and the second unit 10312 have the same size. The material of the first unit 10311 is the same as that of the first unit 10311 in Embodiment 1, and the material of the second unit 10312 is the same as that of the second unit 10312 in Embodiment 1.

[0121] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0122] Embodiment 8

[0123] This embodiment provides an optoelectronic device and its preparation method. Compared with the light-emitting device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that as Figure 7As shown, the first sub-layer is composed of two first units 10311 and two second units 10312. In the X direction, a first unit 10311, a second unit 10312, a first unit 10311, and a second unit 10312 are arranged in sequence. The area of the positive projection of each first unit 10311 in the first sub-layer on the first electrode 101 accounts for 1 / 4 of the area of the positive projection of the first sub-layer on the first electrode 101. The area of the positive projection of each second unit 10312 in the first sub-layer on the first electrode 101 accounts for 1 / 4 of the area of the positive projection of the first sub-layer on the first electrode 101. And the second sub-layer is composed of two first units 10311 and two second units 10312. In the X direction, a second unit 10312, a first unit 10311, a second unit 10312, and a first unit 10311 are arranged in sequence. The area of the positive projection of each first unit 10311 in the second sub-layer on the first electrode 101 accounts for 1 / 4 of the area of the positive projection of the second sub-layer on the first electrode 101. The area of the positive projection of each second unit 10312 in the second sub-layer on the first electrode 101 accounts for 1 / 4 of the area of the positive projection of the second sub-layer on the first electrode 101. The first unit 10311 and the second unit 10312 have the same size. The material of the first unit 10311 is the same as that of the first unit 10311 in Example 1, and the material of the second unit 10312 is the same as that of the second unit 10312 in Example 1.

[0124] The preparation method of the optoelectronic device in this embodiment can be referred to that in Example 1.

[0125] Example 9

[0126] This embodiment provides an optoelectronic device and its preparation method. Compared with the light-emitting device in Example 1, the difference of the optoelectronic device in this embodiment is that: as Figure 8As shown, the active layer 103 includes three sub-layers 1031 (the first sub-layer to the third sub-layer) stacked in sequence. The first sub-layer is closer to the hole transport layer 1052 than the second sub-layer. The thickness of the first sub-layer is 20 nm. The first sub-layer is composed of two first units 10311 and one second unit 10312. In the X direction, one first unit 10311, one second unit 10312, and one first unit 10311 are arranged in sequence. The area of the forward projection of the first unit 10311 in the first sub-layer on the first electrode 101 accounts for 2 / 3 of the area of the forward projection of the first sub-layer on the first electrode 101. The total area of the forward projection of the second unit 10312 in the first sub-layer on the first electrode 101 accounts for 1 / 3 of the area of the forward projection of the first sub-layer on the first electrode 101. The thickness of the second sub-layer is 20 nm. The second sub-layer is composed of one first unit 10311 and two second units 10312. In the X direction, one second unit 10312, one first unit 10311, and one second unit 10312 are arranged in sequence. The area of the forward projection of the first unit 10311 in the second sub-layer on the first electrode 101 accounts for 1 / 3 of the area of the forward projection of the second sub-layer on the first electrode 101. The total area of the forward projection of the second unit 10312 in the second sub-layer on the first electrode 101 accounts for 2 / 3 of the area of the forward projection of the first sub-layer on the first electrode 101. The structural composition of the third sub-layer is the same as that of the first sub-layer.

[0127] The preparation method of the optoelectronic device in this embodiment can be referred to that in Embodiment 1.

[0128] Comparative Example 1

[0129] This comparative example provides an optoelectronic device and its preparation method. Compared with the light-emitting device in Embodiment 1, the difference of the light-emitting device in this comparative example is that: the active layer is a single-layer structure, the material of the active layer is ZnCdSe / ZnSe / ZnS blue quantum dots, and the thickness of the active layer is 60 nm.

[0130] Compared with the preparation method of the light-emitting device in Embodiment 1, the difference of the preparation method of the light-emitting device in this comparative example is that: step S1.6 is omitted, and step S1.5 is replaced with "spin-coating a ZnCdSe / ZnSe / ZnS quantum dot - n-octane solution with a concentration of 25 mg / mL on the side of the hole transport layer away from the hole injection layer under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 80 °C to solidify into a film to obtain the active layer".

[0131] Comparative Example 2

[0132] This comparative example provides an optoelectronic device and a preparation method thereof. Compared with the light-emitting device in Example 1, the difference of the light-emitting device in this comparative example lies in that: the active layer is a single-layer structure, the material of the active layer is ZnCdSe / ZnSe / ZnS blue quantum dots, and the thickness of the active layer is 30 nm.

[0133] The preparation method of the optoelectronic device in this comparative example is carried out with reference to the preparation method of the optoelectronic device in Comparative Example 1.

[0134] Experimental Example

[0135] Performance detection is respectively carried out on the optoelectronic devices in Examples 1 to 9, Comparative Example 1 and Comparative Example 2. An efficiency test system built with a FushiDa FPD optical property measurement device (including Ocean Optics USB2000, LabView-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various relevant connecting wires and data cards, efficiency test dark box and data acquisition system, etc.) is used to detect and obtain parameters such as the turn-on voltage, current, brightness, and emission spectrum of each light-emitting device, and then key parameters such as external quantum efficiency and power efficiency are calculated, and the device lifetime of each optoelectronic device is tested with a lifetime test device, and the leakage rate of each optoelectronic device is detected.

[0136] Among them, the test method for current efficiency is as follows: discontinuously collect the brightness values of the optoelectronic device in the range of driving voltage from 0 V to 8 V, the collection area is the area of the active layer (length × width), the voltage value for initially collecting brightness is 3 V, and it is collected every 0.2 V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under the collection conditions of this time, and the maximum current efficiency (C.E max , cd / A) and the operating voltage at a brightness of 1000 nit (U@1000 nit, V)

[0137] The detection method for device lifetime includes the steps of: under the drive of a constant current (2 mA), performing electroluminescence lifetime analysis on each optoelectronic device with a lifetime test device, and recording the time required for each optoelectronic device to decay from the maximum brightness to 95%.

[0138] During the performance detection process, three parallel samples are set for each type of optoelectronic device, and the test average value of three parallel samples is taken for each performance detection parameter. The performance detection results of each optoelectronic device at 25 °C and a relative humidity of 50% are shown in Table 1 below:

[0139] Table 1

[0140]

[0141] As can be seen from Table 1, compared with the comprehensive performance of the optoelectronic devices in Comparative Example 1 and Comparative Example 2, the comprehensive performance of the optoelectronic devices in Examples 1 to 9 is more advantageous, specifically manifested as follows: the device efficiency of the optoelectronic devices in Examples 1 to 9 is higher, the device life of the optoelectronic devices in Examples 1 to 9 is longer, and the U@1000nit of the optoelectronic devices in Examples 1 to 9 is lower. Taking the optoelectronic devices in Example 9 and Comparative Example 1 as an example, the C.E max of the optoelectronic device in Example 9 is max 1.96 times that of the optoelectronic device in Comparative Example 1, the T95 of the optoelectronic device in Example 9 is 1.88 times that of the T95 of the optoelectronic device in Comparative Example 1, the U@1000nit of the optoelectronic device in Example 9 is only 40% of the U@1000nit of the optoelectronic device in Comparative Example 1, and the leakage rate of the optoelectronic device in Example 9 is only 80% of the leakage rate of the optoelectronic device in Comparative Example 1.

[0142] Among them, the reason for the poor comprehensive performance of the optoelectronic device in Comparative Example 1 is that: the thickness of the active layer is relatively thick, which is not conducive to the injection of carriers into the active layer, resulting in a low carrier injection level; the reason for the poor comprehensive performance of the optoelectronic device in Comparative Example 2 is that: the thickness of the active layer is relatively thin, and the number of excitons that can be accommodated is limited.

[0143] This shows that the active layer 103 of the optoelectronic device 10 includes a plurality of sub-layers 1031 stacked in sequence along the Z direction. Each sub-layer 1031 includes a first unit 10311 and a second unit 10312 arranged alternately, and the first units 10311 of any two adjacent sub-layers 1031 are arranged in a staggered manner. On the one hand, since the material of the second unit 10312 has a low resistance, the loss rate of electrons or holes passing through the second unit is very low, which is conducive to reducing the injection difficulty of carriers, enabling the optoelectronic device 10 to have a good carrier injection level, and capable of reducing the working voltage of the optoelectronic device 10; on the other hand, optical resonance is formed between the plurality of first units 10311, increasing the microcavity effect, thereby improving the device efficiency of the optoelectronic device 10 and being conducive to improving the device life of the optoelectronic device 10.

[0144] The above has introduced in detail an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device provided by an embodiment of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An optoelectronic device, characterized in that, The optoelectronic device includes: a first electrode and a second electrode which are oppositely arranged; and an active layer disposed between the first electrode and the second electrode; wherein the active layer includes a plurality of sub-layers stacked in sequence, each sub-layer includes at least one first unit and at least one second unit; the material of the first unit includes quantum dots, and the material of the second unit includes one or more of a first metal and a first metal oxide; the forward projections of the first units of any two adjacent sub-layers on the first electrode at least partially do not overlap.

2. The optoelectronic device according to claim 1, characterized in that, The resistivity of the material of the second unit is less than 10 -3 Ω·m at 20°C to 80°C; and / or The first unit and the second unit are alternately arranged; and / or the forward projections of the second units of any two adjacent sub-layers on the first electrode at least partially do not overlap. Optionally, the forward projections of the second units of any two adjacent sub-layers on the first electrode completely do not overlap; and / or the forward projections of the first units of any two adjacent sub-layers on the first electrode completely do not overlap.

3. The optoelectronic device according to claim 1 or 2, characterized in that, The first metal is selected from one or more of Au, Ag, Cu, Al, Pt, Rh, Cr, Ni, Sn, Nb, and Fe, and / or the first metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, CdO, SnO2, and In2O3.

4. The optoelectronic device according to claim 1, characterized in that, The quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots; Among them, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots, and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI group compounds, III-VI group compounds, III-V group compounds, IV-VI group compounds or I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots includes one or more layers; optionally, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and / or the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and / or the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3 and InGaSe3, and / or the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and / or the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2 and CuInGaS2;And / or, the structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + , M is a divalent metal cation, and M is selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2 + , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ and Eu 2+ one or more of them, and X is a halogen anion; and / or, the structural general formula of the organic perovskite quantum dots is CMX3, where C is formamidinium; and / or, the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation; and / or The average particle size of the quantum dots is 2 nm to 25 nm.

5. The optoelectronic device according to claim 1, characterized in that, The thickness of the active layer is 10 nm to 100 nm; and / or the thickness of each sub-layer is 5 nm to 50 nm; and / or for each sub-layer, the total area of the forward projection of the first unit on the first electrode accounts for 50% to 90% of the area of the forward projection of the sub-layer on the first electrode.

6. The optoelectronic device according to claim 1, characterized in that, One of the first electrode and the second electrode is an anode, and the other is a cathode; The optoelectronic device further includes an electron functional layer disposed between the cathode and the active layer, and the material of the electron functional layer includes one or more of an undoped first inorganic compound and a doped second inorganic compound; wherein, the undoped first inorganic compound includes one or more of an undoped second metal oxide, a IIB-VIA group semiconductor material, a IIIA-VA group semiconductor material, and a IB-IIIA-VIA group semiconductor material; optionally, the undoped second metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and / or the IIB-VIA group semiconductor material is selected from one or more of ZnS, ZnSe, and CdS, and / or the IIIA-VA group semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA group semiconductor material is selected from one or more of CuInS and CuGaS, and / or the doped second inorganic compound includes a third metal oxide doped with a first doping element, the third metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn; And / or, the optoelectronic device further includes a hole functional layer disposed between the anode and the active layer, and the material of the hole functional layer includes one or more of an organic compound, an undoped third inorganic compound, and a doped fourth inorganic compound; wherein, the organic compound is selected from one or more of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium oxyphthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazolyl)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, and / or the undoped third inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide, and / or the doped fourth inorganic compound is a host inorganic compound doped with a second doping element, and the host inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements; And / or, the materials of the first electrode and the second electrode are independently selected from one or more of a second metal, a carbon material, and a fourth metal oxide; wherein, the second metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers, and / or the fourth metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO, and In2O3.

7. A method for manufacturing an optoelectronic device, characterized in that, Comprising the following steps: Providing a first electrode, and forming an active layer on one side of the first electrode; and Forming a second electrode on the side of the active layer away from the first electrode; Wherein, the method for forming the active layer includes the steps of: sequentially forming a plurality of sub-layers on one side of the first electrode, and the method for forming each sub-layer includes the steps of: pre-defining at least one first region and at least one second region; and depositing quantum dots in the first region to form a first unit, and depositing one or more of a first metal and a first metal oxide in the second region to form a second unit; The forward projections of the first units of any two adjacent sub-layers on the first electrode at least partially do not overlap.

8. The manufacturing method according to claim 7, characterized in that, The resistivity of the material of the second unit is less than 10 -3 Ω·m at 20°C to 80°C; and / or The forward projections of the first units of any two adjacent sub-layers on the first electrode at least partially do not overlap. Optionally, the forward projections of the second units of any two adjacent sub-layers on the first electrode completely do not overlap; and / or The first unit and the second unit are alternately arranged; and / or The forward projections of the first units of any two adjacent sub-layers on the first electrode completely do not overlap; and / or The first metal is selected from one or more of Au, Ag, Cu, Al, Pt, Rh, Cr, Ni, Sn, Nb, and Fe, and / or the first metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO, and In2O3; and / or The quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots; and / or The average particle size of the quantum dots is 2 nm to 25 nm.

9. The preparation method according to claim 7 or 8, characterized in that, The thickness of the active layer is 10 nm to 100 nm; and / or The thickness of each sub-layer is 5 nm to 50 nm; and / or For each sub-layer, the total area of the forward projection of the first unit on the first electrode accounts for 50% to 90% of the area of the forward projection of the sub-layer on the first electrode.

10. An electronic device, characterized in that, The electronic device includes the optoelectronic device described in any one of claims 1 to 6, or the electronic device includes the optoelectronic device prepared by the preparation method described in any one of claims 7 to 9.

Images