Method for improving electrical properties of perovskite solar cell by using sulfamirone hydrochloride material

Abstract

The invention provides a method for improving the electrical property of a perovskite solar cell by using a sulfamirone hydrochloride material, and relates to the technical field of solar cells, the cell structure sequentially comprises a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top; a new additive sulfamethrone hydrochloride is introduced into the perovskite light absorption layer, the additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution, and the dosage of the additive is 0.1-1.5 mg / mL. Based on the method, various types of defects can be passivated at the same time, the series resistance and the open voltage loss are reduced, the filling factor is improved, and finally the efficiency and the stability of the battery are obviously improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly relates to a method for improving the electrical performance of perovskite solar cells by using mafenide hydrochloride material. Background Art

[0002] In recent years, perovskite solar cells (PSCs) have developed very rapidly. Currently, their power conversion efficiency has reached 26.7%. In order to overcome the theoretical limit of the efficiency of single-junction perovskite solar cells, by stacking a narrow-bandgap cell and a wide-bandgap cell to form a tandem cell (TSC), the power conversion efficiency can be further improved.

[0003] As a common top cell in tandem cells, the optimal bandgap range of perovskite materials is 1.6 - 1.8 eV. However, wider-bandgap perovskites usually require introducing a large amount of Br atoms into the lattice to replace part of the I atoms. Under illumination, it is more likely to induce halide segregation, exacerbate energy level mismatch, and lead to open-circuit voltage (V OC ) loss and decreased stability. In addition, due to halide segregation, the defect density on the surface and inside of perovskite will increase significantly. These defects include inherent point defects, halogen ion (I - / Br - / Cl-) vacancies, uncoordinated Pb 2+ and vacancy defects formed by the volatilization of organic cations (MA + / FA + ), etc., which further reduces the open-circuit voltage and efficiency of the device.

[0004] To overcome the above problems, a large number of passivation strategies have been reported successively. Among them, large-size ion materials have attracted extensive attention of researchers. Additive engineering is an effective strategy to improve the open-circuit voltage and efficiency of perovskite solar cells. As is well known, the ease of ion migration is directly related to the size of the ion. Using large-size organic ions can effectively avoid their movement in the perovskite lattice and reduce the defect density. Zhao et al. (Zhao Y, Wang C, Ma T, et al. Reduced 0.418V V OC-deficit of 1.73eV wide-bandgap perovskite solar cells assisted by dual chlorides for efficient all-perovskite tandems[J].Energy&EnvironmentalScience,2023,16(5):2080-2089.) By adding a small amount of PbCl2 and the large organic cation phenylmethylammonium chloride (PMACl) to the three-dimensional (3D) perovskite, the formation of a two-dimensional (2D) phase on the grain surface can be promoted, effectively eliminating defects, inhibiting ion migration, and significantly increasing the open-circuit voltage. An et al. (An Y, Zhang N, Zeng Z, et al. Optimizing crystallization in wide-bandgap mixed halide perovskites for high-efficiency solar cells[J]. Advanced Materials, 2024, 36(17): 2306568.) introduced a multifunctional phenethylammonium acetate additive into the perovskite. By regulating the crystallization rate of the mixed halide, enhancing the uniform distribution of the halide phase, and reducing the defect density in the perovskite film, the voltage loss was significantly reduced and the stability was improved.

[0005] However, in most cases, not all components of the large-sized ions will react with the perovskite. Often, only one type of defect can be passivated, and the passivation effect is limited. In addition, due to their long organic chains, the large-sized ions have poor conductivity, significantly increasing the series resistance and hysteresis effect of the battery and reducing the open-circuit voltage and fill factor of the device. Summary of the Invention

[0006] The object of the present invention is to overcome the deficiencies of the prior art and provide a method for improving the electrical performance of perovskite solar cells using mafenide hydrochloride material. By introducing a mafenide hydrochloride material into the perovskite, multiple types of defects can be passivated simultaneously, the series resistance and open-circuit voltage loss can be reduced, the fill factor can be increased, and thus the power conversion efficiency of the solar cell can be significantly improved.

[0007] To achieve the above object of the invention, the following technical solutions are provided:

[0008] The present invention provides a method for improving the electrical performance of perovskite solar cells using mafenide hydrochloride material. The cell structure includes, from bottom to top, a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer, and a metal electrode;

[0009] The additive material is mafenide hydrochloride, and its chemical formula is shown in Formula 1:

[0010]

[0011] The additive is introduced into the perovskite light absorption layer by dissolving it in the perovskite precursor solution.

[0012] Preferably, the perovskite solar cell is a P-I-N type wide-bandgap perovskite solar cell;

[0013] The perovskite solar cell includes a single-junction perovskite solar cell or a perovskite-based tandem solar cell;

[0014] The bandgap of the perovskite solar cell is 1.6 - 1.8 eV;

[0015] The perovskite material is an organic-inorganic hybrid multi-halogen mixed perovskite material.

[0016] Preferably, the transparent electrode can be one or more of an FTO transparent electrode, an ITO transparent electrode, an IZO transparent electrode, an IZrO transparent electrode, an AZO transparent electrode, and an oxide-metal-oxide multi-layer composite transparent electrode;

[0017] The oxides in the oxide-metal-oxide multi-layer composite transparent electrode include one or more of tin oxide, titanium oxide, molybdenum oxide, zinc oxide, ITO, IZO, and AZO;

[0018] The metals in the oxide-metal-oxide multi-layer composite transparent electrode include one or more of Ag, Au, Cu, and Al.

[0019] Preferably, the hole transport layer is one or more of PTAA, Poly-TPD, Spiro-TTB, PEDOT:PSS, P3HT, self-assembled monolayers, CuSCN, NiO x organic or inorganic hole transport materials;

[0020] The self-assembled monolayers include one or more of (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz), (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (MeO-2PACz), and (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid (Me-4PACz) self-assembled monolayers.

[0021] Preferably, the electron transport layer is one or more of SnO2, TiO2, ZnO, PCBM, C 60 or other electron transport materials such as fullerene derivatives.

[0022] Preferably, the interface modification layer comprises one or more of PEAI, MAI, GuaBr, 1,3-diaminopropane dihydroiodide, bis(2-hydroxyethyl)dimethylammonium chloride, and choline chloride;

[0023] The buffer layer is one or more of BCP, PEI, ZnO, SnO2, Al2O3, SiO2, LiF, and MgF2.

[0024] Preferably, the metal electrode material is one or more of Ag, Au, Cu, and Al, and the thickness is 80-120 nm.

[0025] Preferably, the bottom substrate comprises one or more of transparent glass, flexible PET substrate, flexible PEN substrate, silicon bottom cell, copper indium gallium selenide bottom cell, perovskite bottom cell, and CdTe bottom cell.

[0026] Preferably, the preparation method of the perovskite absorption layer is one or more of spin coating method, blade coating method, and slot die coating method;

[0027] In the present invention, the spin coating method is adopted for the preparation of the perovskite absorption layer. The spin coating speed is 3000-7000 r / min, the spin coating time is 40-60 s, the annealing temperature is 100-130 °C, and the annealing time is 15-30 min. The present invention has no special limitation on the perovskite thin film preparation process, and the process well-known to those skilled in the art can be adopted.

[0028] The additive is mafenide hydrochloride;

[0029] The additive mafenide hydrochloride is introduced into the perovskite light absorption layer by dissolving it in the perovskite precursor solution;

[0030] The dosage of the additive is 0.1-1.5 mg / mL.

[0031] Advantages and positive effects of the present invention:

[0032] The present invention provides a method for improving the electrical properties of perovskite solar cells using mafenide hydrochloride material. By dissolving the additive mafenide hydrochloride in the perovskite precursor solution, it is introduced into the perovskite light absorption layer. The S=O group of the additive can combine with the uncoordinated Pb 2+ in the perovskite, thereby inhibiting the formation of Pb 0 defects; NH3 + can fill the cation vacancies formed by the volatilization of organic matter and effectively inhibit ion migration; Cl- can fill the halogen ion vacancies on the one hand and improve the perovskite crystallization quality on the other hand. In addition, the mafenide hydrochloride material can significantly reduce the series resistance of the device and reduce V OCLosses are reduced, the fill factor is increased, and by optimizing the material concentration, significantly improved cell efficiency and stability are ultimately achieved. Description of the Drawings

[0033] Figure 1 Schematic diagram of the structure of the perovskite solar cell described in Example 1;

[0034] Figure 2 J-V curve of the perovskite solar cell described in Example 1;

[0035] Figure 3 J-V curve of the perovskite solar cell described in Example 2;

[0036] Figure 4 J-V curve of the perovskite solar cell described in Example 3;

[0037] Figure 5 J-V curve of the perovskite solar cell described in Example 4;

[0038] Figure 6 J-V curve of the perovskite solar cell described in Comparative Example 1;

[0039] Figure 7 Schematic diagram of the structure of the wide-bandgap perovskite-based tandem solar cell described in Example 5;

[0040] Figure 8 J-V curve of the wide-bandgap perovskite-based tandem solar cell described in Example 5;

[0041] Figure 9 J-V curve of the wide-bandgap perovskite-based tandem solar cell described in Comparative Example 2. Detailed Description of the Invention

[0042] The technical solutions of the present invention will be further described in detail below with reference to the drawings and specific embodiments. The following embodiments are provided to better understand the present invention further, and are not limited to the best mode described, and do not limit the content and protection scope of the present invention. For those steps or conditions not specified in the embodiments, the operations or conditions of the conventional experimental steps described in the literature in the art can be carried out. For the reagents or instruments not specified by the manufacturer, they are all conventional reagent products that can be obtained through commercial purchase.

[0043] Example 1

[0044] The bandgap of a P-I-N type perovskite solar cell provided in this example is approximately 1.68 eV, and the structure is as Figure 1 shown, including from bottom to top: transparent glass, ITO, NiO x(HTL), Me-4PACz (HTL), perovskite light absorption layer, MP (interface modification layer), PCBM (ETL), BCP (buffer layer), silver electrode.

[0045] The P-I-N type perovskite solar cell in this embodiment is prepared by a one-step solution method, including the following steps:

[0046] Step 1, pretreatment of the transparent electrode: Clean the ITO conductive glass successively with a detergent, deionized water, acetone, and isopropanol, then dry it with nitrogen and treat it with ultraviolet ozone.

[0047] Step 2, preparation of the hole transport layer: (1) Spin-coat a NiO x solution on the surface of the pretreated ITO conductive glass as the hole transport layer; (2) Transfer the substrate to an N2 glove box and spin-coat a Me-4PACz solution on the surface of the NiO x as the hole transport layer; (3) Wash the Me-4PACz film with an ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0048] Step 3, preparation of the perovskite light absorption layer: (1) Dissolve 0.4 mg of sulfamylon hydrochloride in 1 mL of 1.3 M Cs x FA 1- x Pb(I y Br 1-y )3 perovskite precursor solution, with the solvent being DMF / DMSO (3 / 1: v / v); (2) Uniformly cover the surface of the hole transport layer with 50 μL of the perovskite precursor solution obtained in step (1), and quickly add 200 μL of an anti-solvent during the spin-coating process; (3) Anneal the obtained wet film at 130 °C for 20 min and cool it to room temperature to obtain the perovskite light absorption layer.

[0049] Step 4, preparation of the interface modification layer: Spin-coat an MP solution (MAI: PEAI = 1 mg: 2 mg) on the perovskite surface as the interface modification layer.

[0050] Step 5, preparation of the electron transport layer: Prepare a PCBM layer on the surface of the interface modification layer as the electron transport layer.

[0051] Step 6, preparation of the buffer layer: Prepare a BCP layer on the surface of the electron transport layer as the buffer layer.

[0052] Step 7, preparation of the metal electrode: Prepare a metal silver electrode on the surface of the buffer layer.

[0053] Step 8, photovoltaic performance test: The effective area of the perovskite solar cell device prepared by the above method is 0.08875 cm 2 , under 100 mW / cm 2Measured under the light intensity (AM 1.5G), the scanning range is from 1.3V to 0V, and the scanning step is 0.02V.

[0054] The J-V characteristic curve of the obtained perovskite solar cell is as Figure 2 shown, and it can be seen from Figure 2 that the open-circuit voltage of the perovskite solar cell is 1.193V, the fill factor is 83.00%, and the short-circuit current density is 20.95mA / cm 2 , and the power conversion efficiency is 20.74%.

[0055] Example 2

[0056] The bandgap of a P-I-N type perovskite solar cell provided in this example is about 1.68eV, and the structure is as Figure 1 shown, which successively includes from bottom to top: transparent glass, ITO, NiO x (HTL), Me-4PACz (HTL), perovskite light absorption layer, MP (interface modification layer), PCBM (ETL), BCP (buffer layer), silver electrode.

[0057] The P-I-N type perovskite solar cell in this example is prepared by a one-step solution method, including the following steps:

[0058] Step 1, pretreatment of the transparent electrode: Clean the ITO conductive glass successively with detergent, deionized water, acetone and isopropanol, then dry it with nitrogen and perform ultraviolet ozone treatment.

[0059] Step 2, preparation of the hole transport layer: (1) Spin-coat the NiO x solution on the surface of the pretreated ITO conductive glass as the hole transport layer; (2) Transfer the substrate to the N2 glove box and spin-coat the Me-4PACz solution on the surface of the NiO x as the hole transport layer; (3) Wash the Me-4PACz film with ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0060] Step 3, preparation of the perovskite light absorption layer: (1) Dissolve 0.6mg of sulfamylon hydrochloride in 1mL of 1.3M Cs x FA 1- x Pb(I y Br 1-y )3 perovskite precursor solution, and the solvent is DMF / DMSO (3 / 1:v / v); (2) Uniformly cover the surface of the hole transport layer with 50μL of the perovskite precursor solution obtained in step (1), and quickly drop 200μL of the antisolvent during the spin-coating process; (3) Anneal the obtained wet film at 130°C for 20min and cool it to room temperature to obtain the perovskite light absorption layer.

[0061] Step 4, preparing the interfacial modification layer: Spin-coat an MP solution (MAI:PEAI = 1 mg:2 mg) on the perovskite surface as the interfacial modification layer.

[0062] Step 5, preparing the electron transport layer: Prepare a PCBM layer on the surface of the interfacial modification layer as the electron transport layer.

[0063] Step 6, preparing the buffer layer: Prepare a BCP layer on the surface of the electron transport layer as the buffer layer.

[0064] Step 7, preparing the metal electrode: Prepare a metal silver electrode on the surface of the buffer layer.

[0065] Step 8, photovoltaic performance test: The effective area of the perovskite solar cell device prepared by the above method is 0.08875 cm 2 , and it is measured under the illumination intensity of 100 mW / cm 2 (AM 1.5G). The scanning range is from 1.3 V to 0 V, and the scanning step is 0.02 V.

[0066] The J-V characteristic curve of the obtained perovskite solar cell is as Figure 3 shown. It can be seen from Figure 3 that the open-circuit voltage of the perovskite solar cell is 1.216 V, the fill factor is 84.26%, the short-circuit current density is 21.24 mA / cm 2 , and the power conversion efficiency is 21.77%.

[0067] Example 3

[0068] The bandgap of a P-I-N type perovskite solar cell provided in this example is about 1.68 eV, and the structure is as Figure 1 shown, including, from bottom to top: transparent glass, ITO, NiO x (HTL), Me-4PACz (HTL), perovskite light absorption layer, MP (interfacial modification layer), PCBM (ETL), BCP (buffer layer), silver electrode.

[0069] The P-I-N type perovskite solar cell in this example is prepared by a one-step solution method, including the following steps:

[0070] Step 1, pretreatment of the transparent electrode: Clean the ITO conductive glass successively with detergent, deionized water, acetone and isopropanol, then dry it with nitrogen and perform ultraviolet ozone treatment.

[0071] Step 2, preparing the hole transport layer: (1) Spin-coat a NiO x solution on the surface of the pretreated ITO conductive glass as the hole transport layer; (2) Transfer the substrate to the N2 glove box and perform annealing treatment on NiOx The surface was spin-coated with a Me-4PACz solution as the hole transport layer; (3) The Me-4PACz film was washed with an ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0072] Step 3, preparing a perovskite light absorption layer: (1) Dissolve 0.8 mg of sulfamylon hydrochloride in 1 mL of 1.3 M Cs x FA 1- x Pb(I y Br 1-y )3 perovskite precursor solution, and the solvent was DMF / DMSO (3 / 1: v / v); (2) Uniformly cover 50 μL of the perovskite precursor solution obtained in step (1) on the surface of the hole transport layer, and quickly add 200 μL of anti-solvent during the spin-coating process; (3) Anneal the obtained wet film at 130 °C for 20 min and cool it to room temperature to obtain the perovskite light absorption layer.

[0073] Step 4, preparing an interface modification layer: Spin-coat an MP solution (MAI: PEAI = 1 mg: 2 mg) on the perovskite surface as the interface modification layer.

[0074] Step 5, preparing an electron transport layer: Prepare a PCBM layer on the surface of the interface modification layer as the electron transport layer.

[0075] Step 6, preparing a buffer layer: Prepare a BCP layer on the surface of the electron transport layer as the buffer layer.

[0076] Step 7, preparing a metal electrode: Prepare a metal silver electrode on the surface of the buffer layer.

[0077] Step 8, photovoltaic performance test: The effective area of the perovskite solar cell device prepared by the above method is 0.08875 cm 2 , and it was measured under a light intensity of 100 mW / cm 2 (AM 1.5G), the scanning range was from 1.3 V to 0 V, and the scanning step was 0.02 V.

[0078] The J-V characteristic curve of the obtained perovskite solar cell is as Figure 4 shown, and it can be seen from Figure 4 that the open-circuit voltage of the perovskite solar cell is 1.233 V, the fill factor is 85.04%, the short-circuit current density is 21.24 mA / cm 2 , and the power conversion efficiency is 22.27%.

[0079] Example 4

[0080] The bandgap of a P-I-N type perovskite solar cell provided in this example is about 1.68 eV, and the structure is as Figure 1As shown, from bottom to top, it successively includes: transparent glass, ITO, NiO x (HTL), Me-4PACz (HTL), perovskite light absorption layer, MP (interface modification layer), PCBM (ETL), BCP (buffer layer), silver electrode.

[0081] The P-I-N type perovskite solar cell in this embodiment is prepared by a one-step solution method, including the following steps:

[0082] Step 1, pretreatment of the transparent electrode: The ITO conductive glass is successively cleaned with detergent, deionized water, acetone and isopropanol, then dried with nitrogen, and treated with ultraviolet ozone.

[0083] Step 2, preparation of the hole transport layer: (1) Spin-coat a NiO x solution on the surface of the pretreated ITO conductive glass as the hole transport layer; (2) Transfer the substrate to a N2 glove box and spin-coat a Me-4PACz solution on the surface of NiO x as the hole transport layer; (3) Clean the Me-4PACz film with an ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0084] Step 3, preparation of the perovskite light absorption layer: (1) Dissolve 1.0 mg of mafenide hydrochloride in 1 mL of 1.3 M Cs x FA 1- x Pb(I y Br 1-y )3 perovskite precursor solution, and the solvent is DMF / DMSO (3 / 1: v / v); (2) Uniformly cover the surface of the hole transport layer with 50 μL of the perovskite precursor solution obtained in step (1), and quickly add 200 μL of an anti-solvent during the spin-coating process; (3) Anneal the obtained wet film at 130 °C for 20 min and cool it to room temperature to obtain the perovskite light absorption layer.

[0085] Step 4, preparation of the interface modification layer: Spin-coat an MP solution (MAI: PEAI = 1 mg: 2 mg) on the perovskite surface as the interface modification layer.

[0086] Step 5, preparation of the electron transport layer: Prepare a PCBM layer on the surface of the interface modification layer as the electron transport layer.

[0087] Step 6, preparation of the buffer layer: Prepare a BCP layer on the surface of the electron transport layer as the buffer layer.

[0088] Step 7, preparation of the metal electrode: Prepare a metal silver electrode on the surface of the buffer layer.

[0089] Step 8, Photovoltaic performance test: The effective area of the perovskite solar cell device prepared by the above method is 0.08875 cm 2 , and it is measured under the illumination intensity of 100 mW / cm 2 (AM 1.5G). The scanning range is from 1.3 V to 0 V, and the scanning step is 0.02 V.

[0090] The J-V characteristic curve of the obtained perovskite solar cell is as Figure 5 shown. As can be seen from Figure 5 , the open-circuit voltage of the perovskite solar cell is 1.224 V, the fill factor is 82.19%, the short-circuit current density is 21.43 mA / cm 2 , and the power conversion efficiency is 21.56%.

[0091] Comparative Example 1

[0092] The bandgap of the P-I-N type perovskite solar cell provided in this example is about 1.68 eV, and the structure is as Figure 1 shown, which successively includes from bottom to top: transparent glass, ITO, NiO x (HTL), Me-4PACz (HTL), perovskite light absorption layer, MP (interface modification layer), PCBM (ETL), BCP (buffer layer), silver electrode.

[0093] The P-I-N type perovskite solar cell in this example is prepared by a one-step solution method, including the following steps:

[0094] Step 1, Transparent electrode pretreatment: The ITO conductive glass is successively cleaned with detergent, deionized water, acetone and isopropanol, then dried with nitrogen and treated with ultraviolet ozone.

[0095] Step 2, Preparation of hole transport layer: (1) Spin-coat NiO x solution on the surface of the pretreated ITO conductive glass as the hole transport layer; (2) Transfer the substrate to the N2 glove box and spin-coat Me-4PACz solution on the surface of NiO x as the hole transport layer; (3) Clean the Me-4PACz film with ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0096] Step 3, Preparation of perovskite light absorption layer: (1) Prepare 1.3 M Cs x FA 1-x Pb(I y Br 1-y) (1) 3 calcium perovskite precursor solution; (2) uniformly cover 50 μL of the calcium perovskite precursor solution obtained in step (1) on the surface of the hole transport layer, and quickly drop 200 μL of antisolvent during spin coating; (3) quickly anneal the obtained wet film at 130 °C for 20 min, and cool it to room temperature to obtain the perovskite light absorption layer.

[0097] Step 4, preparing an interfacial modification layer: Spin coat an MP solution (MAI: PEAI = 1 mg: 2 mg) on the perovskite surface as the interfacial modification layer.

[0098] Step 5, preparing an electron transport layer: Prepare a PCBM layer on the surface of the interfacial modification layer as the electron transport layer.

[0099] Step 6, preparing a buffer layer: Prepare a BCP layer on the surface of the electron transport layer as the buffer layer.

[0100] Step 7, preparing a metal electrode: Prepare a metal silver electrode on the surface of the buffer layer.

[0101] Step 8, photovoltaic performance test: The effective area of the perovskite solar cell device prepared by the above method is 0.08875 cm 2 , and it is measured under a light intensity of 100 mW / cm 2 (AM 1.5G), the scanning range is from 1.3 V to 0 V, and the scanning step is 0.02 V.

[0102] The J-V characteristic curve of the obtained perovskite solar cell is as Figure 6 shown, and it can be known from Figure 6 that the open-circuit voltage of the perovskite solar cell is 1.144 V, the fill factor is 80.50%, the short-circuit current density is 20.77 mA / cm 2 , and the power conversion efficiency is 19.12%.

[0103] Example 5

[0104] The perovskite-based tandem solar cell provided in this example is a perovskite / silicon tandem solar cell, and its structure is as Figure 7 shown, and it includes, from bottom to top: back electrode Ag, ITO (back transparent electrode), a-Si-p + (hole-selective layer), a-Si-i (passivation layer), silicon substrate N-type-Si, a-Si-i (passivation layer), a-Si-n + (electron-selective layer), ITO (connection layer), NiO x (perovskite cell HTL), Me-4PACz (perovskite cell HTL), perovskite light absorption layer, MP (interfacial modification layer), C 60 (perovskite cell ETL), ALD-SnO x(Buffer layer), IZO (transparent conductive thin film), and metal grid silver electrode.

[0105] In the perovskite / silicon tandem solar cell of this embodiment, the silicon heterojunction bottom cell uses a single-side polished and single-textured silicon heterojunction bottom cell, and the perovskite absorption layer is a P-I-N type wide-bandgap organic-inorganic hybrid perovskite prepared by a one-step solution method. The perovskite / silicon tandem solar cell of this embodiment is prepared by the following method:

[0106] Step 1: Prepare the passivation layer of the silicon heterojunction bottom cell: Deposit a layer of a-Si-i passivation layer on both the front and back sides of the N-type silicon wafer.

[0107] Step 2: Prepare the hole transport layer and electron transport layer of the silicon heterojunction bottom cell: Deposit an a-Si-n + layer and an a-Si-p + layer on the upper and lower surfaces of the prepared sample respectively, as the electron selective layer and hole selective layer of the Si bottom cell.

[0108] Step 3: Prepare the back transparent electrode of the silicon heterojunction bottom cell: Prepare a layer of ITO transparent electrode on the surface of the a-Si-p + layer.

[0109] Step 4: Prepare the connection layer of the perovskite / silicon tandem solar cell: Prepare a layer of ITO connection layer on the surface of the a-Si-n + layer.

[0110] Step 5: Prepare the hole transport layer of the perovskite cell: (1) Prepare a layer of NiO x thin film on the surface of the ITO connection layer; (2) Transfer the sample to a glove box under nitrogen protection, and spin-coat the Me-4PACz solution on the surface of the NiO x as the hole transport layer; (3) Clean the Me-4PACz thin film with an ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0111] Step 6: Prepare the perovskite light absorption layer: (1) Dissolve 0.8 mg of sulfamylon hydrochloride in 1 mL of 1.3 M Cs x FA 1- x Pb(I y Br 1-y )3 perovskite precursor solution, and the solvent is DMF / DMSO (3 / 1:v / v); (2) Uniformly cover the surface of the hole transport layer with 50 μL of the perovskite precursor solution obtained in step (1), and quickly add 200 μL of antisolvent during the spin-coating process; (3) Anneal the obtained wet film at 130 °C for 20 min and cool it to room temperature to obtain the perovskite light absorption layer.

[0112] Step 7, preparing the interfacial modification layer: Spin-coat the MP solution (MAI:PEAI = 1 mg:2 mg) on the perovskite surface as the interfacial modification layer.

[0113] Step 8, preparing the electron transport layer of the perovskite solar cell: Prepare a C 60 layer on the perovskite layer as the electron transport layer.

[0114] Step 9, preparing the buffer layer: Prepare a SnO2 buffer layer on the C 60 surface.

[0115] Step 10, preparing the transparent conductive film: Prepare IZO on the SnO2 surface as the transparent electrode.

[0116] Step 11, preparing the metal electrode: Prepare a silver back electrode and a metal grid silver electrode on the bottom ITO surface and the top IZO surface.

[0117] Step 12, photovoltaic performance test: The effective area of the perovskite / silicon tandem solar cell device prepared by the above method is 1.05 cm 2 , and it is measured under the illumination intensity of 100 mW / cm 2 (AM 1.5G). The scanning range is from 2.0 V to 0 V, and the scanning step is 0.02 V.

[0118] The J-V characteristic curve of the obtained perovskite / silicon tandem solar cell is as Figure 8 shown. It can be seen from Figure 8 that the open-circuit voltage of the perovskite / silicon tandem solar cell is 1.902 V, the fill factor is 83.05%, the short-circuit current density is 16.34 mA / cm 2 , and the power conversion efficiency is 25.81%.

[0119] Comparative Example 2

[0120] The perovskite-based tandem solar cell provided in this comparative example is a perovskite / silicon tandem solar cell, and its structure is as Figure 7 shown. From bottom to top, it successively includes: a back electrode Ag, ITO (back transparent electrode), a-Si-p + (hole-selective layer), a-Si-i (passivation layer), a silicon substrate N-type-Si, a-Si-i (passivation layer), a-Si-n + (electron-selective layer), ITO (connection layer), NiO x (perovskite cell HTL), Me-4PACz (perovskite cell HTL), a perovskite light absorption layer, MP (interfacial modification layer), C 60 (perovskite cell ETL), ALD-SnO x (buffer layer), IZO (transparent conductive film), and a metal grid silver electrode.

[0121] In the perovskite / silicon tandem solar cell of this embodiment, the silicon heterojunction bottom cell adopts a single-side polished and single-textured silicon heterojunction bottom cell, and the perovskite absorption layer is a P-I-N type wide-bandgap organic-inorganic hybrid perovskite prepared by a one-step solution method. The perovskite / silicon tandem solar cell of this embodiment is prepared by the following method:

[0122] Step 1, preparing a passivation layer for the silicon heterojunction bottom cell: depositing a layer of a-Si-i passivation layer on both the front and back sides of the N-type silicon wafer.

[0123] Step 2, preparing a hole transport layer and an electron transport layer for the silicon heterojunction bottom cell: depositing an a-Si-n + layer and an a-Si-p + layer on the upper and lower surfaces of the prepared sample respectively, as the electron selective layer and the hole selective layer of the Si bottom cell.

[0124] Step 3, preparing a back transparent electrode for the silicon heterojunction bottom cell: preparing a layer of ITO transparent electrode on the surface of the a-Si-p + layer.

[0125] Step 4, preparing a connection layer for the perovskite / silicon tandem solar cell: preparing a layer of ITO connection layer on the surface of the a-Si-n + layer.

[0126] Step 5, preparing a hole transport layer for the perovskite cell: (1) preparing a layer of NiO x thin film on the surface of the ITO connection layer; (2) transferring the sample to a glove box under nitrogen protection, and spin-coating a Me-4PACz solution on the surface of the NiO x as the hole transport layer; (3) cleaning the Me-4PACz thin film with an ethanol solvent to remove uncoordinated Me-4PACz molecules.

[0127] Step 6, preparing a perovskite light absorption layer: (1) preparing a 1.3M Cs x FA 1-x Pb(I y Br 1-y )3 perovskite precursor solution in a DMF / DMSO (3 / 1:v / v) co-solvent; (2) uniformly covering 50 μL of the perovskite precursor solution obtained in step (1) on the surface of the passivation layer, and quickly dropping 200 μL of an anti-solvent during the spin-coating process; (3) quickly annealing the obtained wet film at 130 °C for 20 min and cooling to room temperature to obtain the perovskite light absorption layer.

[0128] Step 7, preparing an interface modification layer: spin-coating an MP solution (MAI:PEAI = 1 mg:2 mg) on the surface of the perovskite as the interface modification layer.

[0129] Step 8, preparing the electron transport layer of the perovskite solar cell: Prepare a C 60 layer as the electron transport layer on the surface of the perovskite layer.

[0130] Step 9, preparing the buffer layer: Prepare a SnO2 buffer layer on the surface of C 60 surface.

[0131] Step 10, preparing the transparent conductive thin film: Prepare IZO as the transparent electrode on the surface of SnO2.

[0132] Step 11, preparing the metal electrodes: Prepare a silver back electrode and a metal grid line silver electrode on the surface of the bottom ITO and the surface of the top IZO.

[0133] Step 12, photovoltaic performance test: The effective area of the perovskite / silicon tandem solar cell device prepared by the above method is 1.05 cm 2 , and it is measured under the illumination intensity of 100 mW / cm 2 (AM 1.5G). The scanning range is from 2.0 V to 0 V, and the scanning step is 0.02 V.

[0134] The J-V characteristic curve of the obtained perovskite / silicon tandem solar cell of Comparative Example 2 is as Figure 9 shown. It can be seen from Figure 9 that the open circuit voltage of the perovskite solar cell is 1.861 V, the fill factor is 77.39%, the short circuit current density is 16.10 mA / cm 2 , and the power conversion efficiency is 23.19%.

[0135] In summary, by introducing mafenide hydrochloride material into the perovskite precursor solution in the present invention, various types of defects can be passivated simultaneously, the crystallization quality can be enhanced, the series resistance and open voltage loss can be reduced at the same time, the fill factor can be improved, and finally the battery efficiency and stability are significantly improved. This method is simple to operate, easy to implement, has a high repetition rate, and has good application prospects.

[0136] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and refinements can still be made, and these improvements and refinements should also be regarded as the protection scope of the present invention.

Claims

1. A method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material, characterized in that: The battery structure includes, from bottom to top, a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer, and a metal electrode; A new additive, sulfamethoxazole hydrochloride, is introduced into the perovskite absorption layer. The additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution.

2. The method for improving the electrical performance of perovskite solar cells using the sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The perovskite solar cell is a PIN-type wide bandgap perovskite solar cell; The perovskite solar cell includes a single-junction perovskite solar cell or a perovskite-based tandem solar cell; The band gap of the perovskite solar cell is 1.6 to 1.8 eV; The perovskite material is an organic-inorganic hybrid multi-halogen mixed perovskite material.

3. The method for improving the electrical performance of perovskite solar cells using the sulfamethoxazole hydrochloride material according to claim 1, characterized in that: The transparent electrode is one or more of a FTO transparent electrode, an ITO transparent electrode, an IZO transparent electrode, an IZrO transparent electrode, an AZO transparent electrode, and an oxide-metal-oxide multilayer composite transparent electrode; The oxide in the oxide-metal-oxide multilayer composite transparent electrode includes one or more of tin oxide, titanium oxide, molybdenum oxide, zinc oxide, ITO, IZO, and AZO; the metal in the oxide-metal-oxide multilayer composite transparent electrode includes one or more of Ag, Au, Cu, and Al.

4. The method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The hole transport layer is PTAA, Poly-TPD, Spiro-TTB, PEDOT:PSS, P3HT, self-assembled monolayer, CuSCN, NiO x One or more organic or inorganic hole transport materials; The self-assembled monolayer comprises one or more of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, and (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid self-assembled monolayers.

5. The method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The electron transport layer is SnO2, TiO2, ZnO, PCBM, C 60 Or one or more of fullerene derivative electron transport materials.

6. The method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The interface modification layer includes one or more of PEAI, MAI, GuaBr, 1,3-diaminopropane dihydroiodide, bis(2-hydroxyethyl)dimethylammonium chloride, and choline chloride; The buffer layer is one or more of BCP, PEI, ZnO, SnO2, Al2O3, SiO2, LiF or MgF2.

7. The method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The metal electrode material is one or more of Ag, Au, Cu and Al, and has a thickness of 80 to 120 nm.

8. The method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The bottom substrate includes one or more of transparent glass, a flexible PET substrate, a flexible PEN substrate, a silicon bottom cell, a copper indium gallium selenide bottom cell, a perovskite bottom cell, and a CdTe bottom cell.

9. The method for improving the electrical performance of perovskite solar cells using sulfamethoxazole hydrochloride material as claimed in claim 1, characterized in that: The perovskite absorption layer preparation method is one or more of spin coating, blade coating, and slit coating; In the spin coating method, the spin coating speed is 3000-7000 r / min, the spin coating time is 40-60 s, the annealing temperature is 100-130° C., and the annealing time is 15-30 min.

10. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The dosage of the additive is 0.1-1.5 mg / mL.

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