Buried bottom passivation vacuum deposition perovskite thin film method and solar cell

Abstract

The invention provides a bottom-buried passivation vacuum deposition perovskite thin film method and a solar cell. The method comprises the following steps: providing a cell substrate, preparing a hole transport layer on the surface of the cell substrate, preparing an SAMs layer on the surface of the hole transport layer, preparing a bottom-buried layer on the surface of the SAMs layer, and preparing a perovskite layer on the surface of the bottom-buried layer. According to the method, an amino valeric acid hydrohalide material is used on the surface of the SAMs layer and prepared on the surface of the SAMs layer through a soaking method or a vacuum deposition method, the SAM layer is effectively protected, damage is reduced, coordination with Pb < 2 + > can be achieved, grain boundary defects are passivated, and the defect density is reduced, so that the photoelectric conversion efficiency of a device is improved.

Description

Technical Field

[0001] This application belongs to the technical field of batteries. More specifically, it relates to a method for preparing a perovskite solar cell passivation layer, as well as a single-junction perovskite solar cell and a crystalline silicon / perovskite tandem solar cell prepared by this method. Background Art

[0002] In recent years, due to their unique physical and chemical properties, perovskite solar cells (PSCs) have attracted extensive attention in the field of optoelectronics. Perovskite materials have advantages such as adjustable bandgap, low defect state density, high light absorption coefficient, and long carrier diffusion length, making them ideal candidates for a new generation of high-efficiency photovoltaic technologies. These properties not only endow perovskite solar cells with excellent optoelectronic performance but also provide a solid foundation for their potential in practical applications. Since their first report in 2009, the power conversion efficiency (PCE) of perovskite solar cells has experienced a rapid increase. As of 2024, the certified highest power conversion efficiency has reached an astonishing 26.1%, which is comparable to that of traditional crystalline silicon solar cells and is expected to be further improved in the future.

[0003] The structural design of common perovskite solar cells has a crucial impact on their performance. According to the different arrangements of functional layers and charge transport mechanisms, common perovskite solar cells can be divided into two main structures: the normal structure (n-i-p structure) and the inverted structure (p-i-n structure). The normal structure generally consists of five parts from bottom to top: a transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode. The normal structure has a high process maturity, but its electron transport layer usually requires high-temperature annealing treatment, which may limit the choice of substrate materials and increase the preparation cost.

[0004] In contrast, the inverted structure is a relatively novel and more innovative device structure in perovskite solar cells. It generally consists of five parts from bottom to top: a transparent electrode, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode. The perovskite solar cell has a high energy level compatibility with crystalline silicon cells, and it is very promising to prepare crystalline silicon / perovskite tandem solar cells.

[0005] There are many common methods for preparing perovskite thin films. Among them, the two-step method has the following advantages compared to the one-step method: 1. It has better uniformity and coverage. The two-step method can better control the uniformity and coverage of each step by preparing the lead halide layer and the organic cation salt layer step by step; 2. The thickness of the thin film is controllable, and a perovskite thin film with controllable and uniform thickness can be obtained; 3. It does not use organic solvents and is more environmentally friendly. In industrial applications, it can prevent the problems of non-uniformity and incomplete coverage commonly seen in the one-step method.

[0006] However, the current research on the two-step method still has certain limitations. Compared with the one-step method, the optoelectronic performance of the perovskite thin film prepared is lower. When preparing a reverse-structure perovskite solar cell, the SAMs layer is commonly used to modify the hole transport layer, which can improve the adhesion of the perovskite precursor solution in the one-step method and passivate the interface defects of the transport layer. For the perovskite thin film prepared by the two-step method, the temperature is relatively high when preparing the lead halide layer, which is likely to cause irreversible damage to the SAM layer and reduce the modification ability of the SAMs layer. And when preparing the perovskite thin film by the two-step method, when preparing the second-step organic cation salt layer, lead (Pb) is likely to remain at the lower interface of the thin film, reducing the quality of the perovskite thin film and the optoelectronic conversion efficiency of the battery device. Summary of the Invention

[0007] The purpose of this application is to provide a method for preparing a buried-passivation vacuum-deposited perovskite thin film, using materials such as 5-aminovaleric acid, 5-aminovaleric acid hydroiodide, and 5-aminovaleric acid hydrobromide. By the soaking method or the vacuum deposition method, a buried layer is prepared on the surface of the SAMs layer, which can effectively protect the SAM layer in the two-step method, reduce damage, and can coordinate with Pb 2+ to passivate grain boundary defects and reduce defect density, thereby improving the optoelectronic conversion efficiency of the device.

[0008] To achieve the above purpose, the technical solution adopted in the embodiments of this application is:

[0009] The present invention provides a method for preparing a buried-passivation vacuum-deposited perovskite thin film, including the steps of: providing a battery substrate, preparing a hole transport layer on the surface of the battery substrate, preparing a SAMs layer on the surface of the hole transport layer, preparing a buried layer on the surface of the SAMs layer by the soaking method or the vacuum deposition method, and preparing a perovskite layer on the surface of the buried layer.

[0010] In one embodiment, the buried layer is composed of at least one of the materials of 5-aminovaleric acid, 5-aminovaleric acid hydroiodide, and 5-aminovaleric acid hydrobromide.

[0011] Specifically, the preparation of the buried layer by the immersion method includes: dissolving the buried layer material in a methanol solvent, heating and stirring to obtain a buried layer solution, then immersing all the wafers with the prepared SAMs layer in the obtained buried layer solution, leaving for a certain time, and then taking out the wafers with tweezers and performing annealing treatment. Among them, the stirring and heating temperature is 0~80°C, the stirring time is 15~80 min, the immersion time is 1~30 min, the annealing temperature is 60~100°C, and the annealing time is 1~20 min.

[0012] Specifically, the preparation of the buried layer by the vacuum deposition method includes: placing the buried layer material in a crucible, closing the chamber door of the evaporation coater, and slowly heating up after the vacuum degree drops to the required vacuum degree value to start preparing the buried layer. Among them, the mass of the buried layer material is 0.5~3 g, the evaporation temperature range is 100°C~200°C, the evaporation vacuum degree range is 3×10 -3 Pa~1×10 - 4 Pa, and the evaporation rate range is 0.05 Å / S~3 Å / S.

[0013] In one embodiment, a hole transport layer is prepared on the surface of the battery substrate, and the preparation method of the hole transport layer is at least one of the spin coating method and the magnetron sputtering method;

[0014] Specifically, when the hole transport layer is prepared by the spin coating method, it includes: uniformly coating the hole transport layer dispersion liquid on the surface of the substrate wafer, with a spin coating speed of 1000~5000 rpm and a spin coating time of 10~100 s; after spin coating, perform annealing operation, with an annealing temperature of 300~600°C and an annealing time of 10~50 min;

[0015] Specifically, the hole transport layer can also be prepared by the magnetron sputtering method. Place the substrate wafer sequentially on the magnetron sputtering substrate, blow off the surface dust with an ear syringe, place the substrate wafer in the magnetron sputtering chamber, start the program, and take out the substrate wafer after the program ends.

[0016] In one embodiment, a SAMs layer is prepared on the surface of the hole transport layer, and the preparation method of the SAMs layer is at least one of the spin coating method and the vacuum deposition method;

[0017] Specifically, when the SAMs layer is prepared by the spin coating method, it includes: dissolving the SAMs material in a solvent and stirring, with a stirring time of 10~120 min and a stirring temperature of 10 - 120°C, taking the solvent and uniformly coating it on the surface of the hole transport layer, with a spin coating speed of 1000~5000 rpm and a spin coating time of 10~100 s; after spin coating, perform annealing operation, with an annealing temperature of 300~600°C and an annealing time of 10~50 min.

[0018] Specifically, the SAMs layer is prepared by vacuum deposition, which includes: placing the SAM layer material in a crucible and performing evaporation. The vacuum degree range for evaporation is 1×10 -4 ~3×10 -4 Pa, the evaporation temperature range is 100°C to 250°C, the evaporation rate range is 0.1 Å / S to 2 Å / S. After evaporation, the sample is taken out for annealing treatment, the annealing temperature is 80°C to 150°C, and the annealing time is 1 min to 45 min.

[0019] In one embodiment, the preparation of the perovskite layer includes: weighing the perovskite precursor materials, placing them in a crucible respectively, and performing evaporation. The vacuum degree range for evaporation is 1×10 -4 ~3×10 -4 Pa, the evaporation temperature range is 200°C to 700°C, the evaporation rate range is 0.1 Å / S to 10 Å / S. After evaporation, the sample is taken out for annealing treatment, the annealing temperature is 100°C to 300°C, and the annealing time is 1 min to 45 min.

[0020] The perovskite precursor materials include at least one or more of lead iodide (PbI2), lead chloride (PbCl2), lead bromide (PbBr2), cesium iodide (CsI), cesium bromide (CsBr), cesium chloride (CsCl), rubidium iodide (RbI), rubidium bromide (RbBr), rubidium chloride (RbCl), guanidinium iodide (GAI), guanidinium bromide (GABr), guanidinium chloride (GACl);

[0021] In one embodiment, when the above perovskite thin film passivation method is applied to a perovskite single-junction solar cell, the cell substrate includes a glass substrate and a conductive substrate, and the conductive substrate is one of fluorine-doped tin oxide (FTO) and indium tin oxide (ITO).

[0022] In one embodiment, the structure of the perovskite single-junction solar cell from bottom to top is: cell substrate, hole transport layer, SAMs layer, buried layer, perovskite layer, electron transport layer, electrode layer. The cell substrate includes a glass substrate and the conductive substrate thereon.

[0023] In another embodiment, when the above perovskite thin film passivation method is applied to a perovskite / silicon tandem cell, the cell structure from bottom to top sequentially includes: cell substrate, hole transport layer, SAMs layer, buried layer, perovskite layer, electron transport layer, transparent electrode layer, metal top electrode layer, antireflection layer. The cell substrate sequentially includes a silicon wafer substrate and a tunneling junction from bottom to top, and the silicon wafer substrate includes a metal bottom electrode layer, a first transparent electrode layer, a P-type substrate doping layer, a substrate passivation layer, a silicon substrate, a substrate surface passivation layer, and an N-type substrate doping layer prepared sequentially from bottom to top.

[0024] Specifically, the tunneling junction is prepared by at least one of atomic layer deposition, magnetron sputtering or wet chemical method, and has a thickness of 1 to 500 nm.

[0025] In one embodiment, the perovskite thin film passivation method further includes forming an electron transport layer on the perovskite layer. The electron transport layer is prepared by at least one of spin coating, spraying or vacuum deposition, and has a thickness of 20 nm.

[0026] Specifically, in the spin coating method used for the electron transport layer, the electron transport layer dispersion liquid is uniformly coated on the surface of the perovskite layer. The spin coating speed is 500 to 4000 rpm, and the spin coating time is 10 to 80 s.

[0027] Specifically, in the spraying method used for the electron transport layer, the electron transport layer liquid is prepared and placed in a spraying box. The program is started, the spraying height is 1 to 20 mm, the spraying speed is 0.1 to 3 cm / s, and the substrate is removed after spraying.

[0028] Specifically, in the vacuum deposition method used for the electron transport layer, the electron transport layer material is evaporated onto the surface of the perovskite layer. The evaporation vacuum degree is 5×10-5 to 5×10-4 Pa, the evaporation temperature is 100 to 400 °C, and the evaporation rate is 0.05 to 1 Å / S.

[0029] In one embodiment, the perovskite thin film passivation method further includes preparing an electrode layer on the electron transport layer. The electrode layer is prepared by vacuum deposition and has a thickness of 1 to 3000 nm.

[0030] Specifically, in the vacuum deposition method used for the electrode layer, the prepared sample is placed on a mask plate for evaporation. The evaporation vacuum degree is 5×10-5 to 2×10-4 Pa, the evaporation temperature is 500 to 2000 °C, and the evaporation rate is 0.1 to 5 Å / S to obtain the electrode layer.

[0031] The electrode layer can also be prepared by screen printing to form metal grid lines with a thickness of 0 to 3000 um on the substrate sample prepared in the above steps.

[0032] In another embodiment, when applied to the perovskite-silicon tandem solar cell structure, the perovskite thin film passivation method includes sequentially forming a transparent electrode layer, a metal top electrode layer and an antireflection layer on the electron transport layer.

[0033] Specifically, the transparent electrode layer is prepared by magnetron sputtering or vacuum deposition, and the layer film thickness is 0 to 500 nm.

[0034] Specifically, the magnetron sputtering method is used for the transparent electrode layer, and the transparent electrode material is sputtered onto the surface of the electron transport layer, with the power controlled at 30 - 200 W;

[0035] Specifically, the vacuum deposition method is used for the transparent electrode layer, and the transparent electrode material is evaporated onto the surface of the electron transport layer. The evaporation vacuum degree is 1×10-5 - 5×10-4 Pa, the evaporation temperature is 1000 - 2000 °C, and the evaporation rate is 0.05 - 3 Å / S.

[0036] A metal top electrode layer is prepared on the transparent electrode layer. The metal electrode layer is prepared by the vacuum deposition method and has a thickness of 0 - 3000 nm;

[0037] Specifically, the preparation of the metal top electrode layer includes: placing the substrate sample prepared in the above steps on a mask plate for evaporation. The evaporation vacuum degree is 5×10-5 - 2×10-4 Pa, the evaporation temperature is 500 - 2000 °C, and the evaporation rate is 0.1 - 5 Å / S to obtain the metal electrode layer.

[0038] The antireflection layer is prepared by the magnetron sputtering method or the vacuum deposition method and has a thickness of 0 - 500 nm;

[0039] Specifically, for the magnetron sputtering method used for the antireflection layer, the antireflection material is sputtered onto the surface of the above metal electrode layer, with the power controlled at 30 - 200 W;

[0040] Specifically, for the vacuum deposition method used for the antireflection layer, the antireflection material is evaporated onto the surface of the above metal electrode layer. The evaporation vacuum degree is 5×10-5 - 5×10-4 Pa, the evaporation temperature is 1000 - 2000 °C, and the evaporation rate is 0 - 5 Å / S.

[0041] The present invention also provides a perovskite solar cell prepared by the above method. In one embodiment, the perovskite single - junction solar cell structure from bottom to top is a cell substrate, a hole transport layer, a SAMs layer, a buried layer, a perovskite layer, an electron transport layer, and an electrode layer.

[0042] Specifically, the cell substrate is a combination of a glass substrate and a conductive substrate;

[0043] The conductive substrate is one of fluorine - doped tin oxide (FTO) and indium tin oxide (ITO);

[0044] The hole transport layer is composed of at least one of nickel oxide (NiO x ), molybdenum disulfide (MoS2), and molybdenum oxide (MoO x );

[0045] The perovskite layer has a structure of ABX3, where A is an organic cation, including CH3NH 3+ (MA + ), NH2CH=NH2 + (FA + ), cesium ion (Cs + ), rubidium ion (Rb + ), potassium ion (K + ), or sodium ion (Na + ) and at least one of them;

[0046] B is a metal cation, including lead ion (Pb 2+ ), tin ion (Sn 2+ ), cadmium ion (Cd 2+ ), calcium ion (Ca 2+ ) and at least one of them;

[0047] C is a halogen anion, including F - , Cl - , Br - , I - and at least one of them;

[0048] The buried layer is composed of at least one of 5-aminopentanoic acid, 5-aminopentanoic acid hydroiodide, and 5-aminopentanoic acid hydrobromide;

[0049] The electron transport layer is at least one of zinc oxide (ZnO), tin dioxide (SnO2), titanium dioxide (TiO2), [6,6]-phenyl C61 butyric acid methyl ester (PC 61 BM), and fullerene (C 60 );

[0050] The electrode layer is at least one of gold (Au), silver (Ag), and copper (Cu).

[0051] The present invention also provides a crystalline silicon perovskite tandem solar cell prepared by the above method. The cell structure from bottom to top is a cell substrate, a hole transport layer, a SAMs layer, a buried layer, a perovskite layer, an electron transport layer, a transparent electrode layer, a metal top electrode layer, and an antireflection layer.

[0052] The cell substrate is composed of a silicon wafer substrate and a tunneling junction;

[0053] The silicon wafer substrate is composed of a metal bottom electrode layer, a first transparent electrode layer, a P-type substrate doping layer, a substrate passivation layer, a silicon substrate, a substrate surface passivation layer, and an N-type substrate doping layer;

[0054] In one embodiment, the tunneling junction is composed of at least one of a transparent conductive oxide and polysilicon.

[0055] The hole transport layer is composed of at least one of nickel oxide (NiO x ), molybdenum disulfide (MoS2), and molybdenum oxide (MoO x );

[0056] The perovskite layer has a structure of ABX3, where A is an organic cation, including CH3NH 3+ (MA + ), NH2CH=NH 2+ (FA + ), cesium ion (Cs + ), rubidium ion (Rb + ), potassium ion (K + ), or sodium ion (Na + ) or at least one of them;

[0057] B is a metal cation, including lead ion (Pb 2+ ), tin ion (Sn 2+ ), cadmium ion (Cd 2+ ), calcium ion (Ca 2+ ) or at least one of them;

[0058] C is a halogen anion, including F - , Cl - , Br - , I - or at least one of them;

[0059] The buried layer is composed of at least one of 5-aminopentanoic acid, 5-aminopentanoic acid hydroiodide, and 5-aminopentanoic acid hydrobromide;

[0060] The electron transport layer is composed of at least one of zinc oxide (ZnO), tin dioxide (SnO2), titanium dioxide (TiO2), [6,6]-phenyl C61 butyric acid methyl ester (PC 61 BM), and fullerene (C 60 );

[0061] The transparent electrode layer uses at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum zinc oxide (AZO).

[0062] The metal top electrode layer is composed of at least one of gold (Au), silver (Ag), and copper (Cu).

[0063] The antireflection layer is composed of at least one of magnesium fluoride (MgF x ) and lithium fluoride (LiF x ).

[0064] The preparation method of the perovskite solar cell provided by the embodiment of the present application has at least the following beneficial effects:

[0065] In this method, a buried layer is prepared on the SAM layer. When the perovskite layer is prepared by a two-step method, inorganic halide molecules such as lead iodide (PbI2) need to be deposited on the SAMs layer at high temperature, which causes partial decomposition or degradation of the SAMs layer and reduces the uniformity of the SAMs layer. This method can effectively protect the SAMs layer from direct contact with high temperature and ensure the integrity and uniform coverage of the SAMs layer.

[0066] By preparing a buried layer on the SAM layer in this method, the attachment points for depositing inorganic halide molecules can be increased. The carboxyl group of the buried layer material can coordinate with Pb 2+ and the amino group can coordinate with halogen atoms, such as bromide ions (Br - ), reducing the interface defects of the perovskite layer and improving the photoelectric conversion efficiency of the device. Description of the Drawings

[0067] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for use in the embodiments or exemplary technical descriptions. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0068] Figure 1 It is a step diagram of an embodiment of the present invention;

[0069] Figure 2 It is a schematic structural diagram of a single-junction perovskite solar cell provided by an embodiment of the present invention;

[0070] Figure 3 It is a schematic structural diagram of a tandem perovskite solar cell provided by an embodiment of the present invention;

[0071] Figure 4 It is a J-V curve diagram of Embodiment 1 and Comparative Example 1 of the present invention.

[0072] S001, hole transport layer; S002, SAMs layer; S020, buried layer; S003, perovskite layer; S004, electron transport layer;

[0073] S051, glass substrate; S052, conductive substrate; S006, electrode layer;

[0074] S0070, silicon wafer substrate; S080, tunneling junction; S009, transparent electrode layer; S010, metal electrode layer; S011, antireflection layer. Detailed Embodiments

[0075] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, the following further details this application in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not used to limit this application.

[0076] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0077] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of this application, "a plurality of" means two or more, unless otherwise specifically defined. The meaning of "several" is one or more, unless otherwise specifically defined.

[0078] In the description of this application, it should be understood that the orientation or positional relationship indicated by the terms "center", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to this application.

[0079] Throughout the specification, reference to "an embodiment" or "embodiments" means that the particular features, structures, or characteristics described in connection with the embodiments are included in at least one embodiment of this application. Thus, the phrases "in an embodiment" or "in some embodiments" appearing throughout the specification do not necessarily all refer to the same embodiments. In addition, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.

[0080] An embodiment of the present invention provides a method for depositing a buried bottom passivation perovskite thin film, including: providing a battery substrate, preparing a hole transport layer S001 on the surface of the battery substrate, preparing a SAMs layer S002 on the surface of the hole transport layer S001, preparing a buried bottom layer S020 on the surface of the SAMs layer S002 by an immersion method or a vacuum deposition method, and preparing a perovskite layer S003 on the surface of the buried bottom layer S020 by a two-step method. The buried bottom layer material is composed of at least one of 5-aminovaleric acid, 5-aminovaleric acid hydroiodide, and 5-aminovaleric acid hydrobromide.

[0081] In one embodiment, 5-aminovaleric acid can effectively protect the SAMs layer from direct contact with high temperature, ensuring the integrity and uniform coverage rate of the SAMs layer.

[0082] In one embodiment, an appropriate amount of the buried bottom layer S020 material is weighed and placed in a crucible, and it is necessary to ensure that the crucible is cleaned and free of impurity residues. The crucible is placed in an evaporation coater, and then slowly heated to 150 °C for evaporation coating. The evaporation coating vacuum degree is 3×10 -3 Pa, and the evaporation coating rate range is 0.1 Å / S to form a buried bottom layer on the surface of the SAMs layer.

[0083] Please refer to Figure 1 , an embodiment of the present invention provides a perovskite solar cell, including a glass substrate S051, a conductive substrate S052, a hole transport layer S001, a SAMs layer S002, a buried bottom layer S020, a perovskite layer S003, an electron transport layer S004, and an electrode layer S006;

[0084] The preparation steps of the perovskite solar cell are as follows: providing a conductive substrate S052, preparing a hole transport layer S001 on the surface of the conductive substrate S052, preparing a SAMs layer S002 on the surface of the hole transport layer S001, preparing a buried bottom layer S020 on the surface of the SAMs layer S002, preparing a perovskite layer S003 on the surface of the buried bottom layer S020, preparing an electron transport layer S004 on the surface of the perovskite layer S003, and preparing an electrode layer S006 on the surface of the electron transport layer S003;

[0085] The specific preparation steps of the perovskite solar cell are as follows:

[0086] S11: Provide the conductive substrate S052 and clean it, clean it with ethanol, methanol, and acetone for 15 min respectively, dry it for 30 min, and then perform ultraviolet treatment for 10 min;

[0087] S12: Prepare a hole transport layer S001 on the surface of the conductive substrate S052;

[0088] Preferably, the spin coating method is adopted for the hole transport layer S001. The hole transport layer dispersion liquid is uniformly coated on the surface of the conductive substrate. The spin coating speed is 1000 - 5000 rpm, and the spin coating time is 10 - 100 s. After spin coating, an annealing operation is carried out. The annealing temperature is 300 - 600 °C, and the annealing time is 10 - 50 min.

[0089] Preferably, the magnetron sputtering method is adopted for the hole transport layer S001. The conductive substrate S052 is sequentially placed on the magnetron sputtering substrate, and the surface dust is blown off with an ear syringe. The magnetron sputtering substrate is placed in the magnetron sputtering chamber, and the program is started. After the program ends, the substrate is taken out.

[0090] S13: Prepare the SAMs layer S002 on the hole transport layer S001.

[0091] Preferably, the spin coating method is adopted for the SAMs layer S002. The SAMs material is dissolved in a solvent and stirred for a certain time. The solvent is uniformly coated on the surface of the hole transport layer. The spin coating speed is 1000 - 5000 rpm, and the spin coating time is 10 - 100 s. After spin coating, an annealing operation is carried out. The annealing temperature is 300 - 600 °C, and the annealing time is 10 - 50 min.

[0092] Preferably, the vacuum deposition method is adopted for the SAMs layer S002. The SAM layer material is placed in a crucible for evaporation. The vacuum degree range of evaporation is 1×10 -4 ~3×10 -4 Pa, the evaporation temperature range is 100 °C - 250 °C, the evaporation rate range is 0.1 Å / S - 2 Å / S. After evaporation, the sample piece is taken out for annealing treatment. The annealing temperature is 80 °C - 150 °C, and the annealing time is 0 min - 45 min.

[0093] S14: Prepare the buried layer S020 on the surface of the SAMs layer S002.

[0094] Preferably, the immersion method is adopted for the buried layer S020. An appropriate amount of 5-aminopentanoic acid hydrohalide material is weighed and put into a beaker, dissolved in a solvent, and heated and stirred with a stirrer for a certain time. Then the sample piece with the prepared SAMs layer is placed on the sample rack in the beaker and left for a certain time. Then the sample piece is taken out with tweezers and annealed. Among them, the solvent is methanol, the stirring and heating temperature is 0 - 80 °C, the stirring time is 15 - 80 min, the sample piece placement time is 1 - 30 min. The annealing temperature is 60 - 100 °C, and the annealing time is 1 - 20 min.

[0095] Preferably, the buried layer S020 is prepared by vacuum deposition. Weigh an appropriate amount of aminovaleric acid hydrohalide material using a balance, place it in a crucible, close the chamber door of the evaporation coater. After the vacuum degree drops to the required value, slowly raise the temperature to start preparing the buried layer S020. Among them, 0.5 - 3 g of the material is weighed, the evaporation temperature range is 100°C - 200°C, the evaporation vacuum degree range is 3×10 -3 Pa - 1×10 -4 Pa, and the evaporation rate range is 0.05 Å / S - 3 Å / S.

[0096] S15: Prepare a perovskite layer S003 on the surface of the buried layer S020. The perovskite layer S003 is prepared by vacuum deposition, and its thickness is 0 - 1500 nm;

[0097] Specifically, for the vacuum deposition method used to prepare the perovskite layer S003, weigh an appropriate amount of perovskite precursor material and place it in a crucible for evaporation. The evaporation vacuum degree range is 1×10 -4 ~3×10 -4 Pa, the evaporation temperature range is 200°C - 700°C, the evaporation rate range is 0.1 Å / S - 10 Å / S. After evaporation, take out the sample piece for annealing treatment. The annealing temperature is 100°C - 300°C, and the annealing time is 0 min - 45 min.

[0098] S16: Prepare an electron transport layer S004 on the surface of the perovskite layer S003. The electron transport layer S004 is prepared by at least one of spin coating, spraying, or vacuum deposition, and its thickness is 20 nm;

[0099] Specifically, for the spin coating method used to prepare the electron transport layer S004, uniformly coat the electron transport layer dispersion liquid on the surface of the perovskite layer. The spin coating speed is 500 - 4000 rpm, and the spin coating time is 10 - 80 s;

[0100] Specifically, for the spraying method used to prepare the electron transport layer S004, prepare the electron transport layer liquid and place it in a spraying box. Start the program, the spraying height is 1 - 20 mm, the spraying speed is 0.1 - 3 cm / s. After spraying, remove the substrate;

[0101] Specifically, for the vacuum deposition method used to prepare the electron transport layer S004, evaporate the electron transport layer material onto the surface of the above - mentioned perovskite layer S003. The evaporation vacuum degree is 5×10 -5 ~5×10 -4 Pa, the evaporation temperature is 100 - 400°C, and the evaporation rate is 0.05 - 1 Å / S;

[0102] S17: Prepare an electrode layer S006 on the electron transport layer S004. The electrode layer S006 is prepared by vacuum deposition and has a thickness of 0 - 3000 nm;

[0103] Specifically, for the electrode layer S006 prepared by vacuum deposition, place the substrate sample prepared in step S16 on a mask plate for evaporation coating. The evaporation coating vacuum degree is 5×10 -5 ~2×10 -4 Pa, the evaporation coating temperature is 500 - 2000 °C, and the evaporation rate is 0.1 - 5 Å / S to obtain the electrode layer S006;

[0104] The electrode layer can also be prepared by screen printing to form metal grid lines with a thickness of 0 - 3000 um on the sample prepared in step S16;

[0105] Please refer to Figure 2 , this embodiment of the present invention also provides a crystalline silicon perovskite tandem solar cell, including

[0106] a silicon wafer substrate S070, a tunneling junction S080, a hole transport layer S001, a SAMs layer S002, an underlying layer S020, a perovskite layer S003, an electron transport layer S004, a transparent electrode layer S090, a metal top electrode layer S091, and an antireflection layer S092;

[0107] The preparation method of the crystalline silicon perovskite tandem solar cell is as follows: Provide a silicon wafer substrate S070, prepare a tunneling junction S080 on the surface of the silicon wafer substrate S070, prepare a hole transport layer S001 on the surface of the tunneling junction S080, prepare a SAMs layer S002 on the surface of the hole transport layer S001, prepare an underlying layer S020 on the surface of the SAMs layer S002, prepare a perovskite layer S003 on the surface of the underlying layer S020, prepare an electron transport layer S004 on the surface of the perovskite layer S003, prepare a transparent electrode layer S090 on the surface of the electron transport layer S004, prepare a metal top electrode layer S091 on the surface of the transparent electrode layer S090, and prepare an antireflection layer S092 on the surface of the metal top electrode layer S091.

[0108] The specific preparation steps are as follows:

[0109] S21: Provide a silicon wafer substrate S070, which is composed of a metal bottom electrode layer S071, a first transparent electrode layer S072, a P-type substrate doping layer S073, a substrate passivation layer S074, a silicon substrate S075, a substrate surface passivation layer S076, and an N-type substrate doping layer S077;

[0110] S22: Prepare a tunneling junction S080 on the surface of the silicon wafer substrate S070, which is prepared by atomic layer deposition, magnetron sputtering or wet chemical method, and the thickness is 0 - 500 nm;

[0111] S23: Prepare a hole transport layer S001 on the surface of the tunneling junction S080, and the thickness is 0 - 500 nm;

[0112] Preferably, the hole transport layer S001 is prepared by spin coating. The hole transport layer dispersion liquid is uniformly coated on the surface of the tunneling junction 32, the spin coating speed is 1000 - 5000 rpm, and the spin coating time is 10 - 100 s; after spin coating, an annealing operation is carried out, the annealing temperature is 300 - 600 °C, and the annealing time is 10 - 50 min;

[0113] S24: Prepare a SAMs layer S002 on the hole transport layer S001,

[0114] Preferably, the SAMs layer S002 is prepared by spin coating. The SAMs material is dissolved in a solvent and stirred for a certain time, and then the solvent is uniformly coated on the surface of the hole transport layer. The spin coating speed is 1000 - 5000 rpm, and the spin coating time is 10 - 100 s; after spin coating, an annealing operation is carried out, the annealing temperature is 300 - 600 °C, and the annealing time is 10 - 50 min.

[0115] Preferably, the SAMs layer S002 is prepared by vacuum deposition. The SAM layer material is placed in a crucible for evaporation. The vacuum degree range for evaporation is 1×10 -4 ~ 3×10 -4 Pa, the evaporation temperature range is 100 °C - 250 °C, the evaporation rate range is 0.1 Å / S - 2 Å / S. After evaporation, the sample piece is taken out for annealing treatment. The annealing temperature is 80 °C - 150 °C, and the annealing time is 0 min - 45 min

[0116] S25: Prepare a buried layer S020 on the surface of the SAMs layer S002;

[0117] Preferably, the buried layer S020 is prepared by the immersion method. An appropriate amount of 6 - aminohexanoic acid hydrohalide material is weighed and put into a beaker, dissolved in a solvent, heated and stirred with a stirrer for a certain time. Then the sample piece with the prepared SAMs layer is placed on the sample rack in the beaker and left for a certain time. Then the sample piece is taken out with tweezers and annealed. Among them, the solvent is methanol, the stirring and heating temperature is 0 - 80 °C, the stirring time is 15 - 80 min, the sample piece placement time is 1 - 30 min. The annealing temperature is 60 - 100 °C, and the annealing time is 1 - 20 min.

[0118] Preferably, the buried layer S020 is prepared by vacuum deposition. Weigh an appropriate amount of the material of aminovaleric acid hydrohalide using a balance and place it in a crucible. Close the chamber door of the evaporation coater. After the vacuum degree drops to the required value, slowly raise the temperature to start preparing the buried layer. Among them, the amount of the material weighed is 0.5 - 3 g, the evaporation temperature range is 100°C - 200°C, the evaporation vacuum degree range is 3×10 -3 Pa - 1×10 -4 Pa, and the evaporation rate range is 0.05 Å / S - 3 Å / S.

[0119] S26: Prepare a perovskite layer S003 on the surface of the buried layer S020. The perovskite layer S003 is prepared by vacuum deposition, and its thickness is 0 - 1500 nm;

[0120] Specifically, for the vacuum deposition method used for the perovskite layer S003, weigh an appropriate amount of the perovskite precursor material and place it in a crucible for evaporation. The evaporation vacuum degree range is 1×10 -4 ~3×10 -4 Pa, the evaporation temperature range is 200°C - 700°C, the evaporation rate range is 0.1 Å / S - 10 Å / S. After evaporation, take out the sample piece for annealing treatment. The annealing temperature is 100°C - 300°C, and the annealing time is 0 min - 45 min.

[0121] S27: Prepare an electron transport layer S004 on the surface of the perovskite layer S003. The electron transport layer S004 is prepared by at least one of spin coating, spraying, or vacuum deposition, and its thickness is 20 nm;

[0122] Specifically, for the spin coating method used for the electron transport layer S004, uniformly coat the electron transport layer dispersion liquid on the surface of the perovskite layer. The spin coating speed is 500 - 4000 rpm, and the spin coating time is 10 - 80 s;

[0123] Specifically, for the spraying method used for the electron transport layer S004, prepare the electron transport layer liquid and place it in a spraying box. Start the program. The spraying height is 1 - 20 mm, the spraying speed is 0.1 - 3 cm / s. After spraying, remove the substrate;

[0124] Specifically, for the vacuum deposition method used for the electron transport layer S004, evaporate the electron transport layer material onto the surface of the above perovskite layer S003. The evaporation vacuum degree is 5×10 -5 ~5×10 -4 Pa, the evaporation temperature is 100 - 400°C, and the evaporation rate is 0.05 - 1 Å / S;

[0125] S28: Prepare a transparent electrode layer S090 on the surface of the electron transport layer S004. The transparent electrode layer S090 is prepared by magnetron sputtering or vacuum deposition, and the film thickness is 0 - 500 nm;

[0126] Specifically, for the magnetron sputtering method used for the transparent electrode layer S090, the transparent electrode material is sputtered onto the surface of the electron transport layer, and the power is controlled at 30 - 200 W;

[0127] Specifically, for the vacuum deposition method used for the transparent electrode layer S090, the transparent electrode material is evaporated onto the surface of the electron transport layer S004. The evaporation vacuum degree is 1×10-5 - 5×10-4 Pa, the evaporation temperature is 1000 - 2000 °C, and the evaporation rate is 0.05 - 3 Å / S.

[0128] S29: Prepare a metal top electrode layer S091 on the transparent electrode layer S090. The metal electrode layer 34 is prepared by vacuum deposition, and the thickness is 0 - 3000 nm;

[0129] Specifically, for the vacuum deposition method used for the metal top electrode layer S091, the substrate sample prepared in the above steps is placed on the mask plate for evaporation. The evaporation vacuum degree is 5×10 -5 ~2×10 -4 Pa, the evaporation temperature is 500 - 2000 °C, and the evaporation rate is 0.1 - 5 Å / S to obtain the metal electrode layer 34;

[0130] S30: Prepare an antireflection layer S092 on the metal top electrode layer S091. The antireflection layer S092 is prepared by magnetron sputtering or vacuum deposition, and the thickness is 0 - 500 nm;

[0131] Specifically, for the magnetron sputtering method used for the antireflection layer S092, the antireflection material is sputtered onto the surface of the above metal top electrode layer S091, and the power is controlled at 30 - 200 W;

[0132] Specifically, for the vacuum deposition method used for the antireflection layer S092, the antireflection material is evaporated onto the surface of the above metal top electrode layer S091. The evaporation vacuum degree is 5×10 -5 ~5×10 -4 Pa, the evaporation temperature is 1000 - 2000 °C, and the evaporation rate is 0 - 5 Å / S.

[0133] The following provides specific embodiments to clearly and completely describe the technical solutions of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0134] Example 1

[0135] This example provides a method for preparing a perovskite solar cell with a buried bottom layer, including the following steps:

[0136] S11: Provide the conductive substrate S052 and clean it. Clean it with ethanol, methanol, and acetone for 15 minutes each, and dry it for 30 minutes;

[0137] S12: Prepare the hole transport layer S001 on the surface of the conductive substrate S052; Use the spin coating method. Before preparation, treat it with a UV - Ozone machine for 15 minutes. Prepare the hole transport layer dispersion liquid. Weigh 0.05 mol of NiO x powder and dissolve it in 1 ml of ultrapure water, and ultrasonically vibrate for 20 minutes; Uniformly coat the surface of the sample with the hole transport layer dispersion liquid. Set the spin coating speed to 2000 rpm, the spin coating time to 40 s, and the solution volume to 100 ul; After spin coating, perform an annealing operation. The annealing temperature is 450 °C, and the annealing time is 30 minutes to obtain the hole transport layer S001;

[0138] S13: Prepare the SAMs layer S002; Use the spin coating method. Weigh 0.5 mg of [2-(3,6 - dimethoxy - 9H - carbazol - 9 - yl)ethyl]phosphonic acid (MeO - 2PACz) and dissolve it in 1 ml of methanol, heat it at 40 °C and stir for 30 minutes; Take 100 ul of this solution and uniformly coat the surface of the sample. Set the spin coating speed to 3000 rpm, the spin coating time to 40 s, and start rotating; After spin coating, perform an annealing operation. The annealing temperature is 100 °C, and the annealing time is 10 minutes to obtain the SAMs layer S002;

[0139] S14: Prepare the buried bottom layer S020; Use the vacuum deposition method. Weigh 2 g of 5 - aminovaleric acid and place it in a crucible. Close the chamber door of the evaporation coater. After the vacuum degree drops to the required vacuum degree value, slowly heat up and start preparing the buried bottom layer. The evaporation vacuum degree is 23×10 -4 Pa, the evaporation temperature is between 100 °C - 100 °C, set the initial evaporation rate to 0.1 Å / S, the evaporation thickness is 1 nm. After evaporation is completed, take out the sample.

[0140] S15: Prepare the perovskite layer S003, which is prepared by the vacuum deposition method with a thickness of 400 nm; Weigh an appropriate amount of perovskite precursor materials PbI2 (lead iodide) and CsBr (cesium bromide), and place them in two crucibles respectively for evaporation. The evaporation vacuum degree is 2×10 -4Pa, the evaporation temperature is between 400°C and 600°C. Set the evaporation rates of PbI2 and CsBr to be 0.1 Å / S and 1 Å / S respectively. After the evaporation is completed, take out the sample wafer for annealing treatment. The annealing temperature is 100°C and the annealing time is 1 min. Weigh the solution required for the second step, dissolve 82 mg of FAI, 10 mg of MABr, and 9 mg of MACl in 1 ml of ethanol. Set the spin-coating speed to 4000 rpm, the spin-coating time to 30 s, the solution volume to 100 ul. After the spin-coating is completed, perform air annealing operation. The annealing temperature is 150°C and the annealing time is 30 min to obtain the perovskite layer S003.

[0141] S16: Prepare the electron transport layer S004 by vacuum deposition method with a thickness of 20 nm; Evaporate the electron transport layer S004 material C 60 onto the surface of the above-mentioned perovskite layer S003. The evaporation vacuum is 5×10 -4 Pa, and the evaporation rate is 0.1 Å / S;

[0142] S17: Prepare the electrode layer S006 on the electron transport layer S004 by vacuum deposition method with a thickness of 200 nm. Select Cu as the electrode layer material. Place the substrate sample wafer prepared in step S16 on the mask plate for evaporation. The evaporation vacuum is 2×10 -4 Pa, the evaporation temperature is about 2000°C, and the evaporation rate is 1 Å / S to obtain the electrode layer S006;

[0143] Example 2

[0144] This example provides a preparation method of a perovskite solar cell with a buried layer. Except for the difference in step S14 of Example 1, other steps are the same;

[0145] S14: Prepare the buried layer S020; By vacuum deposition method, weigh 2 g of 5-aminopentanoic acid hydroiodide, place it in a crucible, close the chamber door of the evaporation machine. After the vacuum drops to the required vacuum value, slowly raise the temperature to start preparing the buried layer. The evaporation vacuum is 23×10 -4 Pa, the evaporation temperature is between 100°C and 100°C, set the initial evaporation rate to 0.1 Å / S, the evaporation thickness is 1 nm. After the evaporation is completed, take out the sample wafer.

[0146] Example 3

[0147] This example provides a preparation method of a perovskite solar cell with a buried layer. Except for the difference in step S14 of Example 1, other steps are the same;

[0148] S14: Prepare the buried layer S020; Using the vacuum deposition method, weigh 2 g of 5-aminopentanoic acid hydrobromide, place it in a crucible, close the chamber door of the evaporation coater. After the vacuum degree drops to the required value, slowly increase the temperature to start preparing the buried layer. The evaporation vacuum degree is 23×10 -4 Pa, the evaporation temperature is between 100°C and 100°C, set the initial evaporation rate to 0.1 Å / S, the evaporation thickness is 1 nm. After evaporation is completed, take out the sample wafer.

[0149] Example 4

[0150] This example provides a crystalline silicon tandem perovskite solar cell with a buried layer and a preparation method, including the following steps:

[0151] S21: Provide a silicon wafer substrate S070, which is composed of a metal bottom electrode layer S071, a first transparent electrode layer S072, a P-type substrate doping layer S073, a substrate passivation layer S074, a silicon substrate S075, a substrate surface passivation layer S076, and an N-type substrate doping layer S077;

[0152] S22: Prepare a tunneling junction S080 on the surface of the silicon wafer substrate S070 by magnetron sputtering, with a thickness of 100 nm;

[0153] S23: Prepare a hole transport layer S001 on the surface of the tunneling junction S080, with a thickness of 20 nm; Using the spin coating method, before preparation, treat it with a UV-Ozone machine for 15 min, prepare the hole transport layer dispersion solution, weigh 0.05 mol of NiO x powder and dissolve it in 1 ml of ultrapure water, and ultrasonically vibrate for 20 min; Uniformly coat the surface of the sample wafer with the hole transport layer dispersion solution, set the spin coating speed to 2000 rpm, the spin coating time to 40 s, and the solution volume to 100 ul; After spin coating, perform an annealing operation, the annealing temperature is 450°C, and the annealing time is 30 min to obtain the hole transport layer S001;

[0154] S24: Prepare the SAMs layer S002; Using the spin coating method, weigh 0.5 mg of [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphoric acid (MeO-2PACz) and dissolve it in 1 ml of methanol, heat it at 40°C and stir for 30 min; Take 100 ul of this solution and uniformly coat the surface of the sample wafer, set the spin coating speed to 3000 rpm, the spin coating time to 40 s, and start rotating; After spin coating, perform an annealing operation, the annealing temperature is 100°C, and the annealing time is 10 min to obtain the SAMs layer;

[0155] S25: Prepare the buried layer S020; using the vacuum deposition method, weigh 2 g of 5-aminovaleric acid, place it in a crucible, close the chamber door of the evaporation coater, and after the vacuum degree drops to the required vacuum degree value, slowly heat up to start preparing the buried layer. The evaporation vacuum degree is 23×10 -4 Pa, the evaporation temperature is between 100°C and 100°C, set the initial evaporation rate to 0.1 Å / S, the evaporation thickness is 1 nm, and after evaporation is completed, take out the sample wafer.

[0156] S26: Prepare the perovskite layer S003, the perovskite layer is prepared by the vacuum deposition method, and the thickness is 400 nm; weigh an appropriate amount of perovskite precursor materials PbI2 and CsBr, place them in two crucibles respectively, and perform evaporation. The evaporation vacuum degree is 2×10 -4 Pa, the evaporation temperature is between 400°C and 600°C, set the evaporation rates of PbI2 and CsBr to 0.1 Å / S and 1 Å / S respectively, and after evaporation is completed, take out the sample wafer for annealing treatment. The annealing temperature is 100°C and the annealing time is 1 min. Weigh the solution required for the second step, dissolve 82 mg of FAI, 10 mg of MABr, and 9 mg of MACl in 1 ml of ethanol, set the spin coating speed to 4000 rpm, the spin coating time to 30 s, the solution volume to 100 ul, and after spin coating is completed, perform air annealing operation. The annealing temperature is 150°C and the annealing time is 30 min to obtain the perovskite layer S003.

[0157] S27: Prepare the electron transport layer S004 on the surface of the perovskite layer S003, with a thickness of 20 nm prepared by the vacuum deposition method; evaporate the electron transport layer material C 60 onto the surface of the above perovskite layer S003, the evaporation vacuum degree is 5×10 -4 Pa, and the evaporation rate is 0.1 Å / S;

[0158] S28: Prepare the transparent electrode layer S090 on the electron transport layer S004, using the magnetron sputtering method, with a thickness of 150 nm, sputter the transparent electrode material onto the surface of the above electron transport layer S004, and control the power to 40 W;

[0159] S29: Prepare the metal top electrode layer S091 on the transparent electrode layer S090, using the vacuum deposition method, with a thickness of 500 nm, select Ag material, place the substrate sample wafer prepared in the above steps on the mask plate for evaporation, the evaporation vacuum degree is 2×10 -4 Pa, the evaporation temperature is 1500°C, and the evaporation rate is 2 Å / S to obtain the metal top electrode layer S091;

[0160] S30: Prepare an antireflection layer S092 on the metal top electrode layer S091 by using the vacuum deposition method with a thickness of 100 nm. Evaporate the antireflection material onto the surface of the above metal top electrode layer S091. The evaporation vacuum degree is 5×10 -4 Pa, the evaporation temperature is 1500 °C, and the evaporation rate is 1 Å / S.

[0161] Comparative Example 1

[0162] This comparative example provides a method for preparing a perovskite solar cell without a buried bottom layer. Except for not having the step S14 in Example 1, other steps are the same.

[0163] Using a solar simulator, perform a standard solar irradiance calibration (AM1.5), and perform IV tests on the devices obtained from Comparative Example 1, Example 2 with an area of 0.09 cm 2 and Example 3 with an area of 1 cm 2 The above examples and comparative examples. The tests include the photoelectric conversion efficiency (PCE), fill factor (FF), open-circuit voltage (Voc), and short-circuit current (Jsc). Specifically, measure the energy conversion efficiency of the perovskite cells in each example and comparative example. Under the atmospheric environment, use an AM1.5G standard light source for the solar simulation light source, and use a four-channel digital source meter (Keithley 2440) to measure the volt-ampere characteristic curve of the cell under the light source irradiation to obtain the open-circuit voltage Voc, short-circuit current density Jsc, and fill factor FF of the cell, and then calculate the energy conversion efficiency Eff of the cell. Eff = Pout / Popt = Voc×Jsc×(Vmpp×Jmpp) / (Voc×Jsc) = Voc×Jsc×FF, where Pout, Popt, Vmpp, and Jmpp are the working output power, incident light power, maximum power point voltage, and maximum power point current of the cell, respectively.

[0164] Set the starting voltage of Comparative Example 1, Example 1, Example 2, and Example 3 to 1.15 V, the cut-off voltage to 0 V, set the starting voltage of Comparative Example 3 and Example 4 to 1.86 V, the cut-off voltage to 0 V, and the range to 100 mA. Keep the results to two decimal places. The test results are shown in the following table:

[0165] Device Voc (V) <![CDATA[Jsc (mA / cm 2 )]]> FF (%) EFF (%) Example 1 1.12 20.67 80.78 18.71 Example 2 1.11 20.20 79.23 17.77 Example 3 1.11 20.15 79.85 17.85 Example 4 1.82 20.23 72.36 26.65 Comparative Example 1 1.09 19.92 77.96 17.07

[0166] The above examples are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, these examples can be variously changed, modified, substituted, and deformed. These technical solutions obtained by equivalent substitution of the claims of the present invention all fall within the protection scope of the present invention. The protection scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for depositing a perovskite film by vacuum deposition with buried passivation, characterized in that: The method comprises the following steps: providing a battery substrate, preparing a hole transport layer on the surface of the battery substrate, preparing a SAMs layer on the surface of the hole transport layer, preparing a buried bottom layer on the surface of the SAMs layer by an immersion method or a vacuum deposition method, and preparing a perovskite layer on the surface of the buried bottom layer.

2. The buried passivation vacuum deposition method of perovskite thin film according to claim 1, characterized in that: The burying layer is composed of at least one material of 5-aminovaleric acid, 5-aminovaleric acid hydroiodide, and 5-aminovaleric acid hydrobromide.

3. The buried passivation vacuum deposition method of perovskite film according to claim 1, characterized in that: The immersion method for preparing the buried bottom layer includes: dissolving the buried bottom layer material in a methanol solvent, heating and stirring to obtain a buried bottom layer solution, then immersing all the samples prepared with the SAMs layer in the buried bottom layer solution obtained above, then taking out the samples and performing annealing treatment; wherein, the stirring and heating temperature is 0~80°C, the stirring time is 15~80min, the immersion time is 1~30min, the annealing temperature is 60~100°C, and the annealing time is 1~20min.

4. The buried passivation vacuum deposition method of perovskite film according to claim 1, characterized in that: The vacuum deposition method for preparing the buried bottom layer comprises: weighing 0.5-3g of the buried bottom layer material and placing it in a crucible, closing the chamber door of the evaporation machine, and slowly heating up after the vacuum degree drops to the required vacuum degree value to start preparing the buried bottom layer. The evaporation temperature range is 100°C-200°C, and the evaporation vacuum range is 3×10 -3 Pa~1×10 -4 Pa, and the evaporation rate range is 0.05Å / S~3Å / S.

5. The buried passivation vacuum deposition perovskite film method according to claim 1, characterized in that: The hole transport layer is prepared by at least one of a spin coating method and a magnetron sputtering method.

6. The buried passivation vacuum deposition method of perovskite film according to claim 1, characterized in that: The SAMs layer is prepared by at least one of a spin coating method and a vacuum deposition method.

7. The buried passivation vacuum deposition method of perovskite film according to claim 1, characterized in that: The preparation of the perovskite layer comprises: placing the perovskite precursor material in a crucible for evaporation, and the evaporation vacuum range is 1×10 -4 ~3×10 -4 Pa, the evaporation temperature range is 200℃~700℃, the evaporation rate range is 0.1Å / S~10Å / S. After the evaporation is completed, take out the sample for annealing. The annealing temperature is 100℃~300℃, and the annealing time is 1min~45min.

8. The buried passivation vacuum deposition method of perovskite film according to claim 1, characterized in that: The method further includes preparing an electron transport layer on the perovskite layer, wherein the electron transport layer is prepared by a spin coating method, a spray coating method or a vacuum deposition method.

9. A perovskite single-junction solar cell, prepared by the bottom passivation vacuum deposition perovskite thin film method according to any one of claims 1 to 8, characterized in that: The structure from bottom to top is: battery substrate, hole transport layer, SAMs layer, buried layer, perovskite layer, electron transport layer, electrode layer, and the battery substrate includes a glass substrate and a conductive substrate thereon.

10. A crystalline silicon perovskite tandem solar cell, prepared by the bottom passivation vacuum deposition perovskite film method according to any one of claims 1 to 8, characterized in that: The battery structure from bottom to top includes a battery substrate, a hole transport layer, a SAMs layer, a buried layer, a perovskite layer, an electron transport layer, a transparent electrode layer, a metal top electrode layer, and an anti-reflection layer. The battery substrate includes a silicon wafer substrate and a tunnel junction from bottom to top.

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