Preparation method of metal oxide material, photoelectric device comprising metal oxide material and electronic equipment comprising metal oxide material

Abstract

The invention provides a preparation method of a metal oxide material, and a photoelectric device and electronic equipment comprising the metal oxide material. The preparation method of the metal oxide material comprises the following steps: providing a first metal precursor solution and an alcohol solution; mixing the first metal precursor solution with an alcohol solution to perform a first reaction to obtain a first reaction product; the first reaction product, the phosphorylcholine compound and a second metal precursor are mixed for a second reaction to obtain the metal oxide material, and the prepared metal oxide material not only has good chemical stability and photo-thermal stability, but also has good conductivity due to the fact that many active sites are exposed; when the metal oxide material prepared by the preparation method of the metal oxide material is applied to a photoelectric device, the photoelectric device can have good device efficiency and performance stability.

Description

Technical Field

[0001] The present application relates to the field of metal oxide synthesis, and specifically relates to a preparation method of a metal oxide material, a optoelectronic device including the metal oxide material, and an electronic device. Background Art

[0002] A metal oxide material refers to a compound formed by the combination of a metal element and an oxygen element. After the metal oxide material is nano-sized, due to its characteristics of small size, large specific surface area, and many surface active centers, the metal oxide material has small size effect, surface and interface effect, quantum dot size effect, and macroscopic quantum tunneling effect, and thus is widely used in high-efficiency catalysts, batteries, light-emitting devices, supercapacitors, energy storage devices, magnetic devices, and optical devices.

[0003] In the related art, the room temperature solution method is one of the preparation methods of metal oxide materials. The metal oxide material prepared by the room temperature solution method has a large number of defect states, and thus has good electrical conductivity. However, the metal oxide material prepared by the room temperature solution method shows the problem of "easy agglomeration" at room temperature, resulting in poor stability of the metal oxide material. Summary of the Invention

[0004] The present application provides a preparation method of a metal oxide material, an optoelectronic device including the metal oxide material, and an electronic device to improve the stability of the metal oxide material.

[0005] The technical solution of the present application is as follows:

[0006] In a first aspect, the present application provides a preparation method of a metal oxide material, including the following steps:

[0007] Providing a first metal precursor solution and an alcohol solution;

[0008] Mixing the first metal precursor solution and the alcohol solution to carry out a first reaction to obtain a first reaction product; and

[0009] Mixing the first reaction product, a choline phosphate compound, and a second metal precursor to carry out a second reaction to obtain a metal oxide material.

[0010] In a second aspect, the present application further provides a metal oxide material, the metal oxide material includes a first metal element and a second metal element, the oxide of the first metal element in the first valence state is a first metal oxide, and the oxide of the second metal element in the second valence state is a second metal oxide; one of the first metal oxide and the second metal oxide is a trigonal system or a hexagonal system, and the other is a cubic system.

[0011] In a third aspect, the present application provides an optoelectronic device, which includes:

[0012] a first electrode and a second electrode disposed opposite to each other; and

[0013] a functional layer disposed between the first electrode and the second electrode;

[0014] wherein the functional layer includes a plurality of stacked functional sub-layers; the material of at least one of the functional sub-layers includes a metal oxide material prepared by the preparation method of any one of the metal oxides in the first aspect, or the metal oxide material of any one of the second aspect.

[0015] In a fourth aspect, the present application provides an electronic device, which includes the optoelectronic device of any one of the third aspect.

[0016] The present application provides a preparation method of a metal oxide material, an optoelectronic device including the metal oxide material, and an electronic device, which have the following technical effects:

[0017] The preparation method of the metal oxide material is to prepare the metal oxide material by a high-temperature alcoholysis method. During the growth process of the metal oxide seeds, through the combined action of a choline phosphate compound and a second metal precursor, the growth of multiple crystal planes is inhibited under high-temperature conditions and preferential growth on the (002) crystal plane is achieved, so as to obtain a metal oxide material with a morphology exposing more active sites. The prepared metal oxide material has good stability, thereby improving the stability of the optoelectronic device. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0019] Figure 1 is a schematic flowchart of a preparation method of a metal oxide material provided by the present application.

[0020] Figure 2 is a schematic structural diagram of an optoelectronic device provided by the present application.

[0021] Figure 3 is a morphology diagram of a zinc magnesium oxide material prepared in Example 1 of the metal oxide material of the present application;

[0022] Figure 4Curves of current density (J)-voltage (U) characteristics of optoelectronic devices in Device Example 1 to Device Example 3 and Device Comparative Example 1.

[0023] The reference numerals are as follows:

[0024] 10: Optoelectronic device; 101: First electrode; 102: Second electrode; 103: Functional layer; 1031: Electron functional layer; 1032: Hole functional layer; 1033: Light-emitting layer; 10321: Hole injection layer; 10322: Hole transport layer. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0026] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present application. The preferred implementation methods and materials described herein are only for illustration purposes and do not limit the content of the present application.

[0027] It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of the present application may exist in a range form; it should be understood that the description in a range form is only for convenience and brevity and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the counted range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0028] The term "comprising" means "including but not limited to".

[0029] The term "at least one" means one or more, and "a plurality of" means two or more. The term "at least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single item(s) or plural item(s). For example, "at least one of a, b or c" or "at least one of a, b and c" can both be expressed as: a, b, c, a - b (i.e., a and b), a - c, b - c or a - b - c, where a, b and c can be single or multiple respectively.

[0030] The selection range of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items. The said any and all combinations include combinations of any two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A + B. Another example, for the technical solution of "A, and / or, B, and / or, C, and / or, D", it includes any one of A, B, C, D (i.e., the technical solutions connected by "logical or"), and also includes any and all combinations of A, B, C, D, that is, it includes combinations of any two or any three of A, B, C, D, and also includes the four - item combination of A, B, C, D (i.e., the technical solutions connected by "logical and").

[0031] The term "particle size" refers to the diameter of nanoparticles.

[0032] In this application, descriptions such as "layer A is formed on one side of layer B", "layer A is formed on the side of layer B away from layer C" or similar can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or can be expressed as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B", "layer A is disposed on the side of layer B away from layer C" can be expressed as layer A is in direct contact with layer B, or can be expressed as other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0033] In the present application, "substituted or unsubstituted" means that the defined group may be substituted or may not be substituted. When the defined group is substituted, it should be understood that the defined group may be substituted by one or more substituents R, where R is selected from, but not limited to, a deuterium atom, a cyano group, an isocyano group, a nitro group, a halogen atom, a straight-chain alkyl group having 1 to 30 carbon atoms, a branched-chain alkyl group or cycloalkyl group having 3 to 30 carbon atoms, an aliphatic cycloalkylene group having 3 to 30 ring atoms, a heteroalicyclic group having 3 to 30 ring atoms, an aromatic group having 6 to 30 ring atoms, a heteroaryl group having 5 to 30 ring atoms, -NR’R” (amino group), a silyl group, a carbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, a halocarbonyl group, a formyl group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a trifluoromethyl group, and the above groups may also be further substituted by substituents acceptable in the art. It is understood that in -NR’R”, R’ and R” are each independently selected from, but not limited to, a hydrogen atom, a deuterium atom, a cyano group, an isocyano group, a nitro group, a halogen atom, a straight-chain alkyl group having 1 to 10 carbon atoms, a branched-chain alkyl group or cycloalkyl group having 3 to 10 carbon atoms, an aliphatic cycloalkylene group having 3 to 10 ring atoms, a heteroalicyclic group having 3 to 10 ring atoms, an aromatic group having 6 to 14 ring atoms, a heteroaryl group having 5 to 14 ring atoms, a silyl group, a carbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, a halocarbonyl group, a formyl group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a trifluoromethyl group, and the above groups may also be further substituted by substituents acceptable in the art.

[0034] The term "aliphatic hydrocarbon group" refers to an aliphatic straight-chain hydrocarbon group or an aliphatic branched-chain hydrocarbon group. The "hydrocarbon group having 1 to 30 carbon atoms" may, for example, be a straight-chain alkyl group having 1 to 30 carbon atoms, a straight-chain alkenyl group having 2 to 30 carbon atoms, a straight-chain alkynyl group having 2 to 30 carbon atoms, a branched-chain alkyl group having 3 to 30 carbon atoms, a branched-chain alkenyl group having 4 to 30 carbon atoms, or a branched-chain alkynyl group having 4 to 30 carbon atoms. The number of carbon atoms in the hydrocarbon group may, for example, be 1 to 3, 1 to 5, 1 to 8, 1 to 10, 1 to 20, 2 to 5, 2 to 10, 3 to 6, 3 to 10, 4 to 8, or 4 to 10, and examples are 1, 2, 5, 8, 10, 20, 30 or a value between any two of the foregoing values.

[0035] The term "aliphatic hydrocarbonoxy" refers to a group of the general formula *-O-hydrocarbon group, where * represents the connection site and O represents an oxygen atom.

[0036] The term "alicyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group. The number of ring atoms in an "alicyclic hydrocarbon group having 3 to 30 ring atoms" can be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 20, or 5 to 10, and examples are 3, 5, 6, 8, 10, 14, 20, 24, 28, 30, or a value between any two of the foregoing values. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0037] The term "aliphatic heterocyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group in which at least one carbon atom is replaced by a non-carbon atom, and the non-carbon atom can be one or more of N atom, O atom, S atom, Si atom, and P atom. The number of ring atoms in an "aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms" can be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 20, or 5 to 10, and examples are 3, 5, 6, 8, 10, 14, 20, 24, 28, 30, or a value between any two of the foregoing values.

[0038] The term "aryl" refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, which can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For a polycyclic ring, at least one is an aromatic ring system. An "aryl having 6 to 30 ring atoms" can be an aryl having 6 to 20 ring atoms, an aryl having 6 to 18 ring atoms, an aryl having 6 to 16 ring atoms, an aryl having 6 to 14 ring atoms, or an aryl having 6 to 10 ring atoms. The number of ring atoms can be, for example, 6, 10, 12, 14, 16, 18, 20, 24, 26, 28, 30, or a value between any two of the foregoing values. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracenyl, phenanthryl, fluoranthenyl, triphenylenyl, pyrenyl, perylenyl, tetraphenylenyl, fluorenyl, dinaphthylphenyl, acenaphthylenyl, and their derivatives. It can be understood that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically such as acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0039] The term "aryloxy" refers to a group of the general formula *-O-aryl.

[0040] The term "heteroaryl" refers to a group in which at least one carbon atom in the aryl group is replaced by a non-carbon atom, and the non-carbon atom can be one or more of N atom, O atom, S atom, Si atom, and P atom. "Heteroaryl having 5 to 30 ring atoms" can be heteroaryl having 5 to 20 ring atoms, heteroaryl having 5 to 18 ring atoms, heteroaryl having 5 to 16 ring atoms, heteroaryl having 5 to 14 ring atoms, heteroaryl having 5 to 12 ring atoms, or heteroaryl having 5 to 10 ring atoms. The number of ring atoms can be, for example, 5, 10, 12, 14, 18, 20, 24, 26, 28, 30, or a value between any two of the foregoing values. Suitable examples include, but are not limited to, thiophenyl, furyl, pyrrolyl, dioxazolyl, triazolyl, imidazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridinyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothiophenyl, benzofuryl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thiophenopyrrolyl, thiophenothiophenyl, furylpyrrolyl, furylfuryl, thiophenofuryl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, phthalazinyl, phenanthridinyl, peridinyl, quinazolinone, dibenzothiophenyl, dibenzofuryl, or carbazolyl.

[0041] The term "heteroaryloxy" refers to a group of the general formula *-O-heteroaryl.

[0042] The applicant found that metal oxides prepared by the alcoholysis method at high temperature (temperature above 200 °C) have good chemical stability and photothermal stability, and can maintain high performance stability and monodispersity of crystals for a long time (for example, two months) at room temperature. The reason is that the number of defect states of the metal oxides prepared by the high-temperature alcoholysis method is small, but there is a problem of poor conductivity, so there is a problem of low device efficiency when applied to optoelectronic devices.

[0043] Based on this, the embodiment of the present application provides a method for preparing a metal oxide material, as Figure 1 shown, the method for preparing the metal oxide material includes the following steps:

[0044] S1. Provide a first metal precursor solution and an alcohol solution;

[0045] S2. Mix the first metal precursor solution and the alcohol solution to carry out a first reaction to obtain a first reaction product;

[0046] S3. Mix the first reaction product, a choline phosphate compound, and a second metal precursor to carry out a second reaction to obtain a metal oxide material;

[0047] Among them, the first metal precursor solution includes a first compound, the first compound contains a first metal element with a first valence state, and the oxide of the first metal element in the first valence state is a first metal oxide; the second metal precursor includes a second compound, the second compound contains a second metal element with a second valence state, and the oxide of the second metal element in the second valence state is a second metal oxide; one of the first metal oxide and the second metal oxide is a trigonal system or a hexagonal system, and the other is a cubic system. The prepared metal oxide includes the first metal element and the second metal element, and the first metal element and the second metal element are different from each other.

[0048] In the embodiment of the present application, a metal oxide material is prepared by a high-temperature alcoholysis method. During the growth of metal oxide seeds, through the combined action of a choline phosphate compound and a second metal precursor, the growth of multiple crystal planes is inhibited under high-temperature conditions and preferential growth on the (002) crystal plane is achieved, so as to obtain a metal oxide material with a morphology exposing more active sites. The prepared metal oxide material not only has good chemical stability and photothermal stability, but also has good electrical conductivity due to the exposure of more active sites. Among them, the function of the choline phosphate compound is to adsorb on the crystal surface to inhibit crystal plane growth and control the morphology of the metal oxide material; the function of the second metal precursor is that the second metal element in the second metal precursor will cause lattice distortion and affect the growth of each crystal plane of the crystal.

[0049] Specifically, in step S1, the solvents of the first metal precursor solution and the alcohol solution are independently selected from one or more of water, aliphatic hydrocarbons, aromatic hydrocarbons, halogenated hydrocarbons, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds, and sulfone compounds. In some embodiments of the present application, the solvents of the first metal precursor solution and the alcohol solution are independently selected from aliphatic hydrocarbons with 8 to 20 carbon atoms. The number of carbon atoms of the aliphatic hydrocarbon can be, for example, 8, 10, 12, 14, 16, 18, 20, or a value between any two of the foregoing values. As an example, the solvents of the first metal precursor solution and the alcohol solution are independently selected from 1-octadecene.

[0050] The first compound can be an inorganic salt containing a first metal element, an organometallic compound containing a first metal element, etc. The anions constituting the inorganic salt include, but are not limited to, halide ions, sulfate ions, carbonate ions, nitrate ions, phosphate ions, monohydrogen phosphate ions, or dihydrogen phosphate ions; taking the first metal element as Zn for example, the inorganic salts containing the first metal element include, but are not limited to, one or more of zinc halides, zinc nitrate, zinc sulfate, zinc carbonate, and zinc phosphate. The organometallic compound can be one or more of organic salts and organic complexes. The anions constituting the organic salt include, but are not limited to, carboxylate ions having 2 to 20 carbon atoms. The carboxylate ions having 2 to 20 carbon atoms can be, for example, oxalate ions, acetate ions, citrate ions, lactate ions, stearate ions, myristate ions, or oleate ions; taking the first metal element as Zn for example, the organic salts include, but are not limited to, one or more of zinc stearate, zinc acetate, zinc myristate, zinc oleate, zinc citrate, and zinc lactate, and the organic complexes include, but are not limited to, zinc acetylacetonate. The concentration of the first metal element in the first metal precursor solution is, for example, 0.1 mmol / mL to 0.5 mmol / mL.

[0051] In order to reduce the loss rate of the alcohol in the first reaction, in some embodiments of the present application, the alcohol in the alcohol solution is selected from aliphatic alcohol compounds having a boiling point of 200 °C or higher, for example, selected from aliphatic alcohol compounds having 8 to 20 carbon atoms. The number of carbon atoms of the aliphatic alcohol compounds can be, for example, 8, 10, 12, 14, 16, 18, 20, or a value between any two of the foregoing values. As an example, the alcohol in the alcohol solution is selected from one or more of stearyl alcohol, dodecanol, tetradecanol, and 1,2-hexadecanediol. The concentration of the alcohol in the alcohol solution is, for example, 0.1 mmol / mL to 0.5 mmol / mL.

[0052] In order to further improve the yield of the metal oxide material, in some embodiments of the present application, in step S2, the molar ratio of the first metal element in the first metal precursor solution to the alcohol in the alcohol solution is 1:(5 to 10), for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or a value between any two of the foregoing ratios, which can further improve the yield of the metal oxide.

[0053] In order to further improve the performance stability of the metal oxide material, in some embodiments of the present application, the first reaction is carried out at 200°C to 300°C, for example, it can be 200°C, 230°C, 250°C, 270°C, 300°C or a value between any two of the foregoing values; and / or, the reaction time of the first reaction is 2 min to 8 min, for example, 2 min, 4 min, 6 min, 8 min or a value between any two of the foregoing values, which can further improve the chemical stability and photothermal stability of the metal oxide.

[0054] In order to further improve the purity of the metal oxide material, in some embodiments of the present application, before the step of the first reaction, the first metal precursor solution is subjected to a first vacuum degassing treatment to remove water and low-boiling impurities; and / or, the alcohol solution is subjected to a second vacuum degassing treatment to remove water and low-boiling impurities. The first vacuum degassing treatment and the second vacuum degassing treatment are, for example, carried out respectively in an environment with a vacuum degree of 50 Pa to 100 Pa. The environmental temperature of the first vacuum degassing treatment is, for example, room temperature, and the environmental temperature of the second vacuum degassing treatment is, for example, 120°C to 140°C. The times of the first vacuum degassing treatment and the second vacuum degassing treatment are respectively independently 30 min to 60 min.

[0055] In step S2, the phosphocholine compound contains a phosphate group and a tertiary amine group and has the structure shown in the following general formula (I):

[0056]

[0057] In general formula (I), R1 is selected from an aliphatic hydrocarbon group having 1 to 30 carbon atoms which is substituted or unsubstituted by at least one substituent, an aliphatic hydrocarbon oxy group having 1 to 30 carbon atoms which is substituted or unsubstituted by at least one substituent, an aliphatic cycloalkane group having 3 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, an aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, an aryl group having 6 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, an aryloxy group having 6 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, a heteroaryl group having 5 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, a heteroaryloxy group having 5 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, or a combination of these groups, wherein the heteroatoms in the aliphatic heterocyclic hydrocarbon group, the heteroaryl group, and the heteroaryloxy group are independently selected from one or more of N, S, O, P, and Si, and the number of heteroatoms in the aliphatic heterocyclic hydrocarbon group, the heteroaryl group, and the heteroaryloxy group is independently 1 to 20; the substituents are independently selected from deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, carbonyl group, mercapto group, or cyano group, or a combination of these groups;

[0058] R2 is selected from * represents the connection site.

[0059] In some embodiments of the present application, R1 is selected from a hydrocarbon group having 1 to 30 carbon atoms which is substituted or unsubstituted by a hydroxyl group, a hydrocarbon oxy group having 1 to 30 carbon atoms which is substituted or unsubstituted by a hydroxyl group, an aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms which is substituted or unsubstituted by a hydroxyl group, an aryl group having 6 to 20 ring atoms which is substituted or unsubstituted, an aryloxy group having 6 to 20 ring atoms which is substituted or unsubstituted, a heteroaryl group having 5 to 20 ring atoms which is substituted or unsubstituted, a heteroaryloxy group having 5 to 20 ring atoms which is substituted or unsubstituted, or a combination of these groups, wherein the substituents in the substituted aryl group, the substituted aryloxy group, the substituted heteroaryl group, and the substituted heteroaryloxy group are independently selected from one or more of an amino group (general formula -NR’R”), a hydroxyl group, and a carbonyl group.

[0060] In some embodiments of the present application, the phosphocholine compounds are selected from one or more of dodecylphosphocholine, tetradecylphosphocholine, hexadecylphosphocholine, octadecylphosphocholine, glycerophosphocholine, cytidine diphosphate choline, and ethoxyethylphosphocholine.

[0061] In order to further balance the improvement of the conductivity of the metal oxide material and the performance stability of the metal oxide material, in some embodiments of the present application, the molar ratio of the first metal element in the first metal precursor solution to the choline phosphate compound is 1:(0.1 - 0.5), for example, it can be 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5 or a value between any two of the foregoing ratios; and / or, the molar ratio of the second metal element in the second metal precursor to the choline phosphate compound is 1:(1 - 5), for example, it can be 1:1, 1:2, 1:3, 1:4, 1:5 or a value between any two of the foregoing ratios.

[0062] In step S2, for the process of mixing the first reaction product, the choline phosphate compound and the second metal precursor to carry out the second reaction, the mixing order of the first reaction product, the choline phosphate compound and the second metal precursor is not specifically limited. The three can be mixed together, or the choline phosphate compound and the second metal precursor can be mixed first and then mixed with the first reaction product.

[0063] In order to further improve the yield and purity of the metal oxide material, in some embodiments of the present application, the process of mixing the first reaction product, the choline phosphate compound and the second metal precursor to carry out the second reaction includes: providing a mixed solution containing the choline phosphate compound and the second metal precursor, and mixing it with the first reaction product after performing a third vacuum degassing treatment on the mixed solution. The third vacuum degassing treatment is carried out, for example, under a vacuum degree of 50 Pa - 100 Pa and an environment of 100 °C - 300 °C; and / or, the second reaction is carried out at 200 °C - 300 °C, and / or the reaction time of the second reaction is 20 min - 60 min.

[0064] In some embodiments of the present application, the first metal oxide is trigonal or hexagonal, and the second metal oxide is cubic; the first metal element is selected from Zn, Al, In, Fe, V or Cr, and correspondingly, the first metal oxide is ZnO, Al2O3, In2O3, Fe2O3, V2O3 or Cr2O3; the second metal element is selected from Mg, Ca, Zr, Ni or Cu, and correspondingly, the second metal oxide is MgO, CaO, ZrO2, NiO or Cu2O.

[0065] In some other embodiments of the present application, the first metal oxide is of cubic crystal system, and the second metal oxide is of trigonal crystal system or hexagonal crystal system; the first metal element is selected from Mg, Ca, Zr, Ni or Cu, and correspondingly, the first metal oxide is MgO, CaO, ZrO2, NiO or Cu2O; the first metal element is selected from Zn, Al, In, Fe, V or Cr, and correspondingly, the first metal oxide is ZnO, Al2O3, In2O3, Fe2O3, V2O3 or Cr2O3.

[0066] Embodiments of the present application also provide a metal oxide material, which includes a first metal element and a second metal element. The oxide of the first metal element in the first valence state is the first metal oxide, and the oxide of the second metal element in the second valence state is the second metal oxide; one of the first metal oxide and the second metal oxide is of trigonal crystal system or hexagonal crystal system, and the other is of cubic crystal system. The metal oxide material can be prepared by using the preparation method of any one of the metal oxides described above. The first metal element, the second metal element, the first metal oxide and the second metal oxide are all referred to the descriptions above.

[0067] In some embodiments of the present application, the metal oxide material is tetrapod-shaped.

[0068] In some embodiments of the present application, the percentage of the molar amount of the first metal element in the total molar amount of the metal oxide is above 50% and below 100%; and / or, the percentage of the molar amount of the second metal element in the total molar amount of the metal oxide is above 0% and below 50%.

[0069] Embodiments of the present application also provide an optoelectronic device, which includes but is not limited to a light-emitting device, a photovoltaic cell or a photodetector. As Figure 2 shown, the optoelectronic device 10 includes a first electrode 101, a second electrode 102 and a functional layer 103, and the functional layer 103 is disposed between the first electrode 101 and the second electrode 102. Among them, the functional layer 103 includes a plurality of stacked functional sub-layers, and the plurality of functional sub-layers include but are not limited to one or more of an electron functional layer and a hole functional layer. The material of at least one of the functional sub-layers includes the metal oxide material prepared by using the preparation method of any one of the metal oxide materials described above, or any one of the metal oxide materials described above.

[0070] In the optoelectronic device according to the embodiment of the present application, the material of at least one functional sub-layer includes a metal oxide material prepared by the preparation method of any one of the metal oxide materials described above, or any one of the metal oxide materials described above. The metal oxide material has good chemical stability, photothermal stability and electrical conductivity, improves the carrier mobility of the optoelectronic device, and enables the optoelectronic device to have good device efficiency and performance stability.

[0071] In some embodiments of the present application, the materials of the first electrode 101 and the second electrode 102 are independently selected from one or more of metals, carbon materials and third metal oxides. Among them, the metals include but are not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg. The carbon materials include but are not limited to one or more of graphite, carbon nanotubes, graphene and carbon fibers. The third metal oxide can be doped or undoped. The doped third metal oxides include but are not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO). The undoped third metal oxides include but are not limited to one or more of TiO2, SnO2, ZnO and In2O3.

[0072] In some embodiments of the present application, continue to refer to Figure 2 , the plurality of functional sub-layers include an electron functional layer 1031. The material of the electron functional layer 1031 includes a metal oxide material prepared by the preparation method of any one of the metal oxide materials described above, or any one of the metal oxide materials described above. Among them, the first metal element is selected from Zn, Al or In, and the second metal element is selected from Mg, Ca or Zr. The metal oxide can be, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Al (1-x) Mg x O, Al (1-x) Ca x O, Al (1-x) Zr x O, In (1-x) Mg x O, In (1-x) Ca x O or In (1-x) Zr x O, where x is independently 0 < x ≤ 0.5.

[0073] It should be noted that the electronic functional layer 1031 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 1031 is, for example, 10 nm to 100 nm. When the electronic functional layer 1031 is a multi-layer structure, the electronic functional layer 1031 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 1031 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, one of the first electrode 101 and the second electrode 102 is an anode and the other is a cathode, and the electron injection layer is closer to the cathode than the hole blocking layer; for the electronic functional layer 1031 including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode than the hole blocking layer; for the electronic functional layer 1031 including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode than the electron transport layer. When the electronic functional layer 1031 is a multi-layer structure, the material of one layer, part of the layers, or all of the layers can include the metal oxide material prepared by the preparation method of any one of the metal oxide materials described above, or the metal oxide material as described in any one of the above, for example, the material of the layer closest to the cathode can include the metal oxide material prepared by the preparation method of any one of the metal oxide materials described above, or the metal oxide material as described in any one of the above.

[0074] In some embodiments of the present application, with continued reference to Figure 2 , the plurality of functional sub-layers include a hole functional layer 1032, and the material of the hole functional layer 1032 includes the metal oxide material prepared by the preparation method of any one of the metal oxide materials described above, or the metal oxide material as described in any one of the above. Among them, the first metal element is selected from Ni or Cu, the second metal element is selected from V or Cr, and the metal oxide material can be, for example, Ni (1-x) V x O, Ni (1-x) Cr x O, Cu (1-x) Cr x O or Cu (1-x) V x O, and x is independently 0 < x ≤ 0.5.

[0075] It should be noted that the hole functional layer 1032 can be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 1032 is, for example, 10 nm to 100 nm. When the hole functional layer 1032 is a multi-layer structure, the hole functional layer 1032 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 1032 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer. One of the first electrode 101 and the second electrode 102 is an anode and the other is a cathode, and the hole injection layer is closer to the anode than the electron blocking layer; for the hole functional layer 1032 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode than the electron blocking layer; for the hole functional layer 1032 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode than the hole transport layer. When the hole functional layer 1032 is a multi-layer structure, the material of one layer, some layers, or all layers thereof may include the metal oxide material prepared by the preparation method of any one of the metal oxide materials described above, or the metal oxide material as described in any one of the above.

[0076] In some other embodiments of the present application, the material of the hole functional layer does not include the metal oxide material prepared by the preparation method of any of the metal oxide materials described above, or any of the metal oxide materials described above. The material of the hole functional layer 1032 includes, but is not limited to, one or more of an undoped first inorganic compound, a doped second inorganic compound, and an organic compound. Among them, the organic compound includes, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS number: 155090-83-8), copper phthalocyanine (CAS number: 147-14-8), titanium oxyphthalocyanine (CAS number: 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS number: 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS number: 105598-27-4), polyaniline (CAS number: 25233-30-1), polypyrrole (CAS number: 30604-81-0), 3-hexyl-substituted polythiophene (CAS number: 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS number: 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS number: 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS number: 58473-78-2), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS number: 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)] (CAS number: 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS number: 124729-98-2), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS number: 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS number: 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS number: 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS number: 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,One or more of N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviation: PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviation: Spiro-omeTAD, CAS No. 207739-72-8); and / or, the non-doped first inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2); and / or, the doped second inorganic compound is a host inorganic compound doped with a second doping element, and the host inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2), and / or the second doping element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.,

[0077] It can be understood that when the hole functional layer 1032 contains multiple materials and the hole functional layer 1032 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or partially in the same layer. For example, as Figure 2 shown, when the hole functional layer 1032 is composed of a hole injection layer 10321 and a hole transport layer 10322 arranged in a stack, the materials of the hole functional layer 1032 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer 10321 is PEDOT:PSS, and the material of the hole transport layer 10322 is TFB.

[0078] In some embodiments of the present application, the optoelectronic device 10 is a light-emitting device. Among the multiple functional sub-layers, there is a light-emitting layer. For the optoelectronic device 10 including a hole functional layer and an electron functional layer, the light-emitting layer is disposed between the hole functional layer and the electron functional layer, and the hole functional layer is closer to the anode than the electron functional layer. For example, referring further to Figure 2 , the optoelectronic device 10 has a normal structure, the first electrode 101 is the anode and the second electrode 102 is the cathode. In the linear direction from the first electrode 101 to the second electrode 102, the hole functional layer 1032, the light-emitting layer 1033, and the electron functional layer 1031 are sequentially disposed.

[0079] Among them, the material of the light-emitting layer 1033 includes one or more of an organic light-emitting material and a light-emitting quantum dot. Among them, the organic light-emitting material includes, but is not limited to, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, a TBPe fluorescent material, a TTPX fluorescent material, a TBRb fluorescent material, a DBP fluorescent material, a delayed fluorescence material, a TTA material, a thermally activated delayed material, a polymer containing a B-N covalent bond, a hybrid local charge transfer excited state material, an exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, or one or more of them.

[0080] The light-emitting quantum dot includes, but is not limited to, one or more of a red quantum dot, a green quantum dot, and a blue quantum dot, and the light-emitting quantum dot includes, but is not limited to, one or more of a single-component quantum dot, a core-shell structure quantum dot, an inorganic perovskite quantum dot, an organic perovskite quantum dot, and an organic-inorganic hybrid perovskite quantum dot. The core-shell structure quantum dot includes one or more shell layers. The average particle size of the light-emitting quantum dot can be 2 nm to 20 nm, for example, it can be 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0081] For the single-component quantum dot and the core-shell structure quantum dot, the material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot includes, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a III-VI group compound, a IV-VI group compound, or a I-III-VI group compound, and the shell layer of the core-shell structure quantum dot includes one or more layers.

[0082] Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; and / or the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and / or the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3; and / or the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; and / or the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. It should be noted that for the materials of the aforementioned single-component quantum dots, or the cores of core-shell quantum dots, or the shells of core-shell quantum dots, the chemical formulas provided only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn, and Se. If the content of each element is to be indicated, it corresponds to Cd x Zn 1-x Se, 0 < x < 1.

[0083] For inorganic perovskite quantum dots, the general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl−, Br−, or I−.

[0084] For organic perovskite quantum dots, the general structural formula of the organic perovskite quantum dots is CMX3, where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl−, Br−, or I−.

[0085] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+, X is a halogen anion, including but not limited to Cl−, Br− or I−.

[0086] It should be noted that when the material of the light-emitting layer 1033 includes light-emitting quantum dots, ligands can also be connected to the surface of the light-emitting quantum dots. The ligands include but are not limited to fatty carboxylic acid ligands having C1 to C 30 aromatic carboxylic acid ligands having C6 to C 30 fatty mercaptan ligands having C1 to C 30 mercaptoaromatic ligands having C6 to C 30 fatty amine ligands having C1 to C 30 aromatic amine ligands having C6 to C 30 fatty phosphine ligands having C1 to C 30 aromatic phosphine ligands having C6 to C 30 aromatic phosphate ligands having C6 to C 30 and one or more of halogen ligands.

[0087] Among them, the fatty carboxylic acid ligands having C1 to C 30 include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands having C6 to C 30 include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty mercaptan ligands having C1 to C 30 include but are not limited to one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol and octadecanethiol. The mercaptoaromatic ligands having C6 to C 30 include but are not limited to one or more of benzenethiol, triphenylmethanethiol and p-terphenyl-4,4”-dithiol. The fatty amine ligands having C1 to C 30 include but are not limited to one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine and oleylamine. The aromatic amine ligands having C6 to C 30 include but are not limited to one or more of aniline, indanpropylamine, 4-octylaniline and benzidine. The fatty phosphine ligands having C1 to C 30 include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributyloxophosphine, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide. The aromatic phosphine ligands having C6 to C 30The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6-C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I or -Br.

[0088] It can be understood that the preparation methods of each functional sub-layer in the optoelectronic device include, but are not limited to, chemical methods and / or physical methods. Among them, the chemical methods include, but are not limited to, one or more of chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrodeposition, and coprecipitation. The physical methods include, but are not limited to, physical coating methods and solution methods. The physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. The solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating.

[0089] The embodiment of the present application also provides an electronic device, which includes any one of the optoelectronic devices described in the embodiments of the present application. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical device, a camera, a game console, a digital camera, a car navigator, an electronic billboard, an ATM, a smart bracelet, a smart watch, a Virtual Reality (VR) device, or a wearable device.

[0090] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples, and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0091] Example 1 of Metal Oxide Material

[0092] This embodiment provides a method for preparing a metal oxide material, and the obtained metal oxide material is magnesium zinc oxide. The method for preparing the metal oxide material includes the following steps:

[0093] S1.1. Dissolve 0.9 mmol of zinc stearate in 5 g of 1-octadecene to obtain a first metal precursor solution. Then, after stirring and vacuum degassing (vacuum degree: 50 Pa) the first metal precursor solution at room temperature for 10 min, heat it to 140 °C, and then circulate argon for 30 min to obtain a purified first metal precursor solution; mix 5 mmol of n-octadecanol and 20 g of 1-octadecene to obtain an alcohol solution, and then vacuum degas the alcohol solution at 120 °C for 30 min to obtain a purified alcohol solution; dissolve 0.1 mmol of magnesium stearate and 0.1 mmol of octadecylphosphocholine in 2 g of 1-octadecene to obtain a mixture, and then after stirring and vacuum degassing the mixture at room temperature for 10 min, heat it to 140 °C, and then circulate argon for 30 min to obtain a purified mixture.

[0094] S1.2. Inject the purified first metal precursor solution into the purified alcohol solution (temperature: 250 °C), react at 250 °C for 4 min to obtain a first reaction product, add the purified mixture to the first reaction product, and continue to react at 250 °C for 20 min to obtain a second reaction product containing magnesium zinc oxide.

[0095] S1.3. Add a mixture of ethyl acetate and ethanol (volume ratio of ethyl acetate to ethanol: 1:2) to the second reaction product to form a precipitate, then centrifuge at 12,000 r / min for 10 min, remove the supernatant and collect to obtain a first precipitate. Disperse the first precipitate in n-hexane to obtain a first material solution; then, add ethanol to the first material solution to form a precipitate, then centrifuge at 12,000 r / min for 10 min, remove the supernatant and collect to obtain a second precipitate, and the second precipitate is the target magnesium zinc oxide.

[0096] Use a scanning electron microscope (SEM) to observe the morphology of the purified magnesium zinc oxide material prepared in step S1.3, as Figure 3 shown, the purified magnesium zinc oxide material prepared in step S1.3 is four-legged.

[0097] Example 2 of the metal oxide material

[0098] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide material in Embodiment 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: all of the "250 °C" in step S1.2 is replaced with "270 °C".

[0099] Metal Oxide Material Embodiment 3

[0100] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide material in Embodiment 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: all of the "250 °C" in step S1.2 is replaced with "300 °C".

[0101] Metal Oxide Material Embodiment 4

[0102] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide material in Embodiment 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: all of the "octadecylphosphorylcholine" in step S1.1 is replaced with "L-α-glycerophosphatidylcholine".

[0103] Metal Oxide Material Embodiment 5

[0104] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide material in Embodiment 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: all of the "octadecylphosphorylcholine" in step S1.1 is replaced with "cytidine diphosphate choline".

[0105] Metal Oxide Material Embodiment 6

[0106] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide in Embodiment 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: all of the "octadecylphosphorylcholine" in step S1.1 is replaced with "ethoxyethylphosphorylcholine".

[0107] Metal Oxide Material Embodiment 7

[0108] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide material in Example 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: in step S1.1, "0.1 mmol of choline octadecylphosphate" is replaced with "0.45 mmol of choline octadecylphosphate".

[0109] Example 8 of the metal oxide material

[0110] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide material in Example 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: in step S1.1, "0.1 mmol of choline octadecylphosphate" is replaced with "0.45 mmol of choline octadecylphosphate", and in step S1.1, "0.1 mmol of magnesium stearate" is replaced with "0.45 mmol of magnesium stearate".

[0111] Example 9 of the metal oxide material

[0112] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is calcium zinc oxide. Compared with the method for preparing the metal oxide material in Example 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this embodiment is that: in step S1.1, "0.1 mmol of magnesium stearate" is replaced with "0.1 mmol of calcium stearate".

[0113] Example 10 of the metal oxide material

[0114] This embodiment provides a method for preparing a metal oxide material. The obtained metal oxide material is nickel chromium oxide. The method for preparing the metal oxide material includes the following steps:

[0115] S2.1. Dissolve 0.9 mmol of nickel stearate in 5 g of 1-octadecene to obtain a first metal precursor solution. Then, stir and degas the first metal precursor solution under vacuum (vacuum degree: 50 Pa) at room temperature for 10 min, heat it to 140 °C, and then circulate argon for 30 min to obtain a purified first metal precursor solution. Mix 5 mmol of n-octadecanol and 20 g of 1-octadecene to obtain an alcohol solution. Then, degas the alcohol solution under vacuum at 120 °C for 30 min to obtain a purified alcohol solution. Dissolve 0.1 mmol of chromium(III) chloride and 0.1 mmol of octadecylphosphorylcholine in 2 g of 1-octadecene to obtain a mixture. Then, stir and degas the mixture under vacuum at room temperature for 10 min, heat it to 140 °C, and then circulate argon for 30 min to obtain a purified mixture.

[0116] S2.2. Inject the purified first metal precursor solution into the purified alcohol solution (at a temperature of 250 °C), react at 250 °C for 4 min to obtain a first reaction product, add the purified mixture to the first reaction product, and continue to react at 250 °C for 20 min to obtain a second reaction product containing nickel chromium oxide.

[0117] S2.3. Follow the procedure of step S1.3.

[0118] Comparative Example 1 of Metal Oxide Material

[0119] This comparative example provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. Compared with the method for preparing the metal oxide in Example 1 of the metal oxide material, the difference in the method for preparing the metal oxide material in this comparative example is that in step S1.1, "dissolve 0.1 mmol of magnesium stearate and 0.1 mmol of octadecylphosphorylcholine in 2 g of 1-octadecene to obtain a mixture, then stir and degas the mixture under vacuum at room temperature for 10 min, heat it to 140 °C, and then circulate argon for 30 min to obtain a purified mixture" is replaced by "dissolve 0.1 mmol of magnesium stearate in 2 g of 1-octadecene to obtain a mixture, then stir and degas the mixture under vacuum at room temperature for 10 min, heat it to 140 °C, and then circulate argon for 30 min to obtain a purified mixture".

[0120] Comparative Example 2 of Metal Oxide Material

[0121] This comparative example provides a method for preparing a metal oxide material. The obtained metal oxide material is magnesium zinc oxide. The method for preparing the metal oxide material is a room-temperature solution method, which includes the following steps:

[0122] S3.1. Under the condition of introducing nitrogen, disperse 9 mmol of zinc acetate dihydrate and 1 mmol of magnesium acetate tetrahydrate in 30 mL of N,N-dimethylformamide, and stir for 1 h to obtain a zinc source solution;

[0123] S3.2. Dissolve 1.3 mmol of potassium hydroxide in 30 mL of ethanol, and stir for 1 h to obtain an alkali solution;

[0124] S3.3. Under the condition of introducing nitrogen, inject the alkali solution into the zinc source solution at an injection rate of 6 mL / min, and stir for 1 h to carry out a mixing reaction. The mixing reaction is carried out at 30 °C to obtain a reaction solution;

[0125] S3.4. Add ethyl acetate to the reaction solution to form a precipitate, then centrifuge at 12000 r / min for 3 min, discard the supernatant and collect to obtain a first precipitate. Disperse the first precipitate in ethanol to obtain a first material solution; then, add ethyl acetate to the first material solution to form a precipitate, then centrifuge at 12000 r / min for 3 min, discard the supernatant and collect to obtain a second precipitate. Disperse the second precipitate in ethanol to obtain a second material solution; the second precipitate is Zn 0.9 Mg 0.1 O nanoparticles.

[0126] Comparative Example 3 of Metal Oxide Material

[0127] This comparative example provides a preparation method of a metal oxide material. The obtained metal oxide material is nickel chromium oxide. Compared with the preparation method of the metal oxide material in Metal Oxide Example 10, the difference in the preparation method of the metal oxide material in this example is that: in step S2.1, "dissolve 0.1 mmol of chromium trichloride and 0.1 mmol of octadecylphosphorylcholine in 2 g of 1-octadecene to obtain a mixed solution, then stir the mixed solution under vacuum degassing at room temperature for 10 min, then heat up to 140 °C, and then circulate argon for 30 min to obtain a purified mixed solution" is replaced by "dissolve 0.1 mmol of chromium trichloride in 2 g of 1-octadecene to obtain a mixed solution, then stir the mixed solution under vacuum degassing at room temperature for 10 min, then heat up to 140 °C, and then circulate argon for 30 min to obtain a purified mixed solution".

[0128] Device Example 1

[0129] This example provides an optoelectronic device and its preparation method. The optoelectronic device is a quantum dot light-emitting diode with a normal structure, as Figure 2As shown, the optoelectronic device 10 includes a first electrode 101, a hole functional layer 1032, a light-emitting layer 1033, an electron functional layer 1031, and a second electrode 102 that are sequentially stacked. Among them, the first electrode 101 is an anode and the second electrode 102 is a cathode; the hole functional layer 1032 is composed of a hole injection layer 10321 and a hole transport layer 10322 that are sequentially stacked, and the hole injection layer 10321 is closer to the first electrode 101 than the hole transport layer 10322; the electron functional layer 1031 is a single-layer structure. The light-emitting area of the optoelectronic device 10 is 0.04 cm 2 .

[0130] The materials and thicknesses of each layer in the optoelectronic device 10 are as follows:

[0131] The material of the first electrode 101 is ITO, and the average thickness of the first electrode 101 is 10 nm;

[0132] The material of the second electrode 102 is Al, and the average thickness of the second electrode 102 is 35 nm;

[0133] The material of the light-emitting layer 1033 is Cd 0.4 Zn 0.6 Se (core) / ZnSe (intermediate shell) / ZnS (outer shell) quantum dots, the emission color is green, and the average thickness of the light-emitting layer 1033 is 10 nm;

[0134] The material of the electron functional layer 1031 is a zinc magnesium oxide material prepared by Example 1 of a metal oxide material, and the average thickness of the electron functional layer 1031 is 40 nm;

[0135] The material of the hole injection layer 10321 is PEDOT:PSS, and the average thickness of the hole injection layer 10321 is 20 nm;

[0136] The material of the hole transport layer 10322 is TFB, and the average thickness of the hole transport layer 10322 is 18 nm.

[0137] The preparation method of the optoelectronic device in this embodiment includes the following steps:

[0138] S10.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in deionized water for 15 min, in acetone for 15 min, in ethanol for 15 min, and in isopropanol for 15 min in sequence. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate including the first electrode;

[0139] S10.2. Under the air environment of normal temperature and pressure, spin-coat PEDOT:PSS (CAS No. 155090-83-8) on the side of the first electrode away from the substrate, and then place it in a constant temperature heat treatment at 150 °C to cure into a film to obtain a hole injection layer;

[0140] S10.3. Under the nitrogen environment of normal temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the first electrode, and then place it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to cure into a film to obtain a hole transport layer;

[0141] S10.4. Under the nitrogen environment of normal temperature and pressure, spin-coat a quantum dot-octane solution with a concentration of 25 mg / mL on the side of the hole transport layer away from the hole injection layer, and then place it in a constant temperature heat treatment at 80 °C under a nitrogen atmosphere to cure into a film to obtain a light-emitting layer;

[0142] S10.5. Under the nitrogen environment of normal temperature and pressure, spin-coat a zinc oxide magnesium-n-hexane solution with a concentration of 30 mg / mL (zinc oxide magnesium is prepared from the metal oxide material in Example 1) on the side of the light-emitting layer away from the hole transport layer, and then place it in a constant temperature heat treatment at 80 °C under a nitrogen atmosphere to cure into a film to obtain an electron functional layer;

[0143] S10.6. Place the stacked structure completed in Step S10.5 in an evaporation chamber with a vacuum degree not higher than 3×10 -4 Pa, and thermally evaporate Al on the side of the electron functional layer away from the light-emitting layer by using a thermal evaporation process to obtain a second electrode, and then encapsulate it with a non-acid epoxy resin LOCTITE 3335 to obtain an optoelectronic device.

[0144] Device Example 2

[0145] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this example is that: the material of the electron functional layer is replaced with "zinc oxide magnesium material prepared from the metal oxide material in Example 2".

[0146] The preparation method of the optoelectronic device in this example is carried out with reference to Device Example 1.

[0147] Device Example 3

[0148] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this example is that: the material of the electron functional layer is replaced with "zinc oxide magnesium material prepared from the metal oxide material in Example 3".

[0149] The preparation method of the optoelectronic device in this example is carried out with reference to Device Example 1.

[0150] Device Embodiment 4

[0151] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "zinc magnesium oxide material prepared from Metal Oxide Material Embodiment 4".

[0152] The preparation method of the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0153] Device Embodiment 5

[0154] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "zinc magnesium oxide material prepared from Metal Oxide Material Embodiment 5".

[0155] The preparation method of the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0156] Device Embodiment 6

[0157] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "zinc magnesium oxide prepared from Metal Oxide Material Embodiment 6".

[0158] The preparation method of the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0159] Device Embodiment 7

[0160] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "zinc magnesium oxide prepared from Metal Oxide Material Embodiment 7".

[0161] The preparation method of the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0162] Device Embodiment 8

[0163] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "zinc magnesium oxide prepared from Metal Oxide Material Embodiment 8".

[0164] The preparation method of the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0165] Device Embodiment 9

[0166] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the electron functional layer is replaced with "calcium zinc oxide prepared from Metal Oxide Material Embodiment 9".

[0167] The method for preparing the optoelectronic device in this embodiment is carried out with reference to Device Embodiment 1.

[0168] Device Embodiment 10

[0169] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the hole transport layer is replaced with "nickel chromium oxide prepared from Metal Oxide Material Embodiment 10".

[0170] Compared with the method for preparing the optoelectronic device in Device Embodiment 1, the difference of the method for preparing the optoelectronic device in this embodiment is that step S10.3 is replaced with "spin-coating a 30 mg / mL nickel chromium oxide-chlorobenzene solution (nickel chromium oxide is prepared from Metal Oxide Embodiment 10) on the side of the hole injection layer away from the first electrode under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to solidify into a film to obtain the hole transport layer".

[0171] Device Embodiment 11

[0172] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the hole transport layer is replaced with "nickel chromium oxide material prepared from Metal Oxide Material Embodiment 10", and the material of the electron functional layer is replaced with "zinc magnesium oxide material prepared from Metal Oxide Comparative Example 1".

[0173] Compared with the method for preparing the optoelectronic device in Device Embodiment 1, the difference of the method for preparing the optoelectronic device in this embodiment is that step S10.3 is replaced with "spin-coating a 30 mg / mL nickel chromium oxide-chlorobenzene solution (nickel chromium oxide is prepared from Metal Oxide Material Embodiment 10) on the side of the hole injection layer away from the first electrode under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to solidify into a film to obtain the hole transport layer", and "30 mg / mL zinc magnesium oxide-ethanol solution (zinc magnesium oxide is prepared from Metal Oxide Material Embodiment 1)" in step S10.5 is replaced with "30 mg / mL zinc magnesium oxide-ethanol solution (zinc magnesium oxide is prepared from Metal Oxide Comparative Example 1)".

[0174] Device Comparative Example 1

[0175] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the electron functional layer is replaced with "zinc magnesium oxide material prepared from Metal Oxide Material Comparative Example 1".

[0176] The method for manufacturing the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0177] Device Comparative Example 2

[0178] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the electron functional layer is replaced with "zinc magnesium oxide material prepared from Metal Oxide Material Comparative Example 2".

[0179] The method for manufacturing the optoelectronic device in this embodiment refers to Device Embodiment 1.

[0180] Device Comparative Example 3

[0181] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the hole transport layer is replaced with "nickel chromium oxide prepared from Metal Oxide Material Comparative Example 3", and the material of the electron functional layer is replaced with "zinc magnesium oxide prepared from Metal Oxide Material Comparative Example 1".

[0182] Compared with the method for manufacturing the optoelectronic device in Device Embodiment 1, the difference of the method for manufacturing the optoelectronic device in this embodiment lies in that step S10.3 is replaced with "spin-coating a 30 mg / mL nickel chromium oxide-chlorobenzene solution (nickel chromium oxide is prepared from Metal Oxide Material Comparative Example 3) on the side of the hole injection layer away from the first electrode under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to form a film and obtain the hole transport layer", and "30 mg / mL zinc magnesium oxide-ethanol solution (zinc magnesium oxide is prepared from Metal Oxide Material Embodiment 1)" in step S10.5 is replaced with "30 mg / mL zinc magnesium oxide-ethanol solution (zinc magnesium oxide is prepared from Metal Oxide Material Comparative Example 1)".

[0183] Experimental Example

[0184] The performances of the optoelectronic devices in the state of being encapsulated for 1 h in Device Embodiments 1 to 11 and Device Comparative Examples 1 to 3 are respectively detected. The performance test is carried out in an environment with a temperature of 25 °C and a relative humidity of 40%.

[0185] The optoelectronic performance was detected using a Fosida FPD optical property measurement device (including an Ocean Optics USB2000, a LabView-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, an optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connection wires and data cards, an efficiency test dark box, and a data acquisition system, etc., to build an efficiency test system), obtaining parameters such as the turn-on voltage, current, brightness, and emission spectrum of each optoelectronic device, and then calculating key parameters such as the external quantum efficiency and power efficiency.

[0186] Among them, the detection method of current efficiency includes the steps: setting the luminous area to 2 mm × 2 mm = 4 mm 2 , discontinuously collecting the brightness values of the optoelectronic device in the voltage range from 0 V to 8 V, collecting once every 0.2 V, and dividing the brightness value collected each time by the corresponding current density to obtain the current efficiency of the optoelectronic device under the collection conditions of that time, and obtaining the current efficiency (C.E0, cd / A) at a current density of 32 mA / cm 2 . Figure 4 The current density-voltage characteristic curves of the optoelectronic devices in Device Examples 1 to 3 and Device Comparative Example 1 are shown.

[0187] The detection method of device lifetime includes the steps: under the drive of a constant current (2 mA), using a lifetime test device to perform electroluminescence lifetime analysis on each optoelectronic device, and recording the time (T95, h) required for each optoelectronic device to decay from the maximum brightness to 95%.

[0188] The detection method of device efficiency stability includes the steps: after placing the packaged optoelectronic device in an environment with a temperature of 35°C and a relative humidity of 80% for 7 days, discontinuously collecting the brightness values of the optoelectronic device in the voltage range from 0 V to 8 V, collecting once every 0.2 V, and dividing the brightness value collected each time by the corresponding current density to obtain the current efficiency of the optoelectronic device under the collection conditions of that time, and obtaining the current efficiency (C.E1, cd / A) at a current density of 32 mA / cm 2 , calculating to obtain A(%) = C.E1 / C.E0 × 100%, the larger the A%, the higher the stability of the device efficiency of the optoelectronic device; conversely, the smaller the A%, the lower the stability of the device efficiency of the optoelectronic device.

[0189] The performance detection results of each optoelectronic device are shown in Table 1 below:

[0190] Table 1

[0191]

[0192] As can be seen from Table 1, compared with the optoelectronic devices in Device Comparative Example 1 and Device Comparative Example 2, the comprehensive performance of the optoelectronic devices in Device Examples 1 to Device Examples 9 has significant advantages, specifically, the optoelectronic devices in Device Examples 1 to Device Examples 9 have higher device efficiency, longer device life, and better performance stability. In addition, compared with the optoelectronic devices in Device Comparative Example 3, the comprehensive performance of the optoelectronic devices in Device Examples 10 and Device Examples 11 has significant advantages.

[0193] Taking the optoelectronic devices in device example 2 and device comparative example 1 as examples, the device efficiency stability difference between the optoelectronic devices in device example 2 and device comparative example 1 is small, but the CE of the optoelectronic device in device example 2 is max is the CE of the optoelectronic device in device comparison example 1 max The T95 of the optoelectronic device in device embodiment 2 is 3.7 times that of the T95 of the optoelectronic device in device embodiment 2, and 4.2 times that of the T95 of the optoelectronic device in comparative example 1. The reason is that: although the electronic functional materials (zinc magnesium oxide) of the optoelectronic devices in device embodiment 2 and device comparative example 1 are both prepared by high-temperature alcoholysis method, phosphorylcholine compounds are not added during the preparation of the electronic functional materials in device comparative example 1, while phosphorylcholine compounds are added during the preparation of the electronic functional materials in device embodiment 2 to expose more active sites, so that the electron mobility of the electronic functional layer in device embodiment 2 is higher than that of the electronic functional layer in device comparative example 1, which is beneficial to improving the device efficiency and device life of the optoelectronic device.

[0194] Taking the optoelectronic devices in device embodiment 2 and device comparative example 2 as examples, the CE of the optoelectronic devices in device embodiment 2 and device comparative example 2 is max The difference is small, but the T95 and device efficiency stability of the optoelectronic device in Device Example 2 are higher than those of the optoelectronic device in Device Comparative Example 2. The reason is that the metal oxide material prepared by the room temperature solution method has a large number of defect states, thus having good conductivity, but poor chemical stability and photothermal stability.

[0195] It can be seen from this that in the optoelectronic device, the material of the electron functional layer and / or the hole functional layer includes the metal oxide material obtained by the preparation method of the metal oxide material in the embodiment of the present application, which is beneficial to improving the carrier mobility of the optoelectronic device, so that the optoelectronic device has good device efficiency and optoelectronic performance stability.

[0196] Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a metal oxide material, characterized in that, It includes the following steps: Providing a first metal precursor solution and an alcohol solution; Mixing the first metal precursor solution and the alcohol solution to carry out a first reaction to obtain a first reaction product; And Mixing the first reaction product, a choline phosphate compound and a second metal precursor to carry out a second reaction to obtain a metal oxide material.

2. The method for preparing a metal oxide material according to claim 1, characterized in that, The first metal precursor solution includes a first compound, the first compound contains a first metal element with a first valence state, and the oxide of the first metal element in the first valence state is a first metal oxide; the second metal precursor includes a second compound, the second compound contains a second metal element with a second valence state, and the oxide of the second metal element in the second valence state is a second metal oxide; one of the first metal oxide and the second metal oxide is a trigonal system or a hexagonal system, and the other is a cubic system; and / or The choline phosphate compound has a structure represented by the following general formula (Ⅰ): In the general formula (Ⅰ), R1 is selected from an aliphatic hydrocarbon group having 1 to 30 carbon atoms which is substituted or unsubstituted by at least one substituent, an aliphatic hydrocarbon oxy group having 1 to 30 carbon atoms which is substituted or unsubstituted by at least one substituent, an aliphatic cycloalkane group having 3 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, an aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, an aryl group having 6 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, an aryloxy group having 6 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, a heteroaryl group having 5 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, a heteroaryloxy group having 5 to 30 ring atoms which is substituted or unsubstituted by at least one substituent, or a combination of these groups, wherein the heteroatoms in the aliphatic heterocyclic hydrocarbon group, the heteroaryl group and the heteroaryloxy group are independently selected from one or more of N, S, O, P and Si, and the number of heteroatoms in the aliphatic heterocyclic hydrocarbon group, the heteroaryl group and the heteroaryloxy group are independently 1 to 20; the substituents are independently selected from deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, carbonyl group, mercapto group, or cyano group, or a combination of these groups; R2 is selected from * represents a linking site.

3. The method for preparing a metal oxide material according to claim 2, characterized in that, The first metal oxide is a trigonal system or a hexagonal system, and the second metal oxide is a cubic system; the first metal element is selected from Zn, Al, In, Fe, V or Cr, correspondingly, the first metal oxide is ZnO, Al2O3, In2O3, Fe2O3, V2O3 or Cr2O3; the second metal element is selected from Mg, Ca, Zr, Ni or Cu, correspondingly, the second metal oxide is MgO, CaO, ZrO2, NiO or Cu2O; Alternatively, the first metal oxide is of cubic crystal system, and the second metal oxide is of trigonal crystal system or hexagonal crystal system; the first metal element is selected from Mg, Ca, Zr, Ni or Cu, and correspondingly, the first metal oxide is MgO, CaO, ZrO2, NiO or Cu2O; the first metal element is selected from Zn, Al, In, Fe, V or Cr, and correspondingly, the first metal oxide is ZnO, Al2O3, In2O3, Fe2O3, V2O3 or Cr2O3.

4. The method for preparing a metal oxide material according to claim 2, characterized in that, R1 is selected from a hydroxyl-substituted or unsubstituted hydrocarbon group having 1 to 30 carbon atoms, a hydroxyl-substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a hydroxyl-substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, a substituted or unsubstituted aryl group having 6 to 20 ring atoms, a substituted or unsubstituted aryloxy group having 6 to 20 ring atoms, a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms, a substituted or unsubstituted heteroaryloxy group having 5 to 20 ring atoms, or a combination of these groups, wherein the substituents in the substituted aryl group, the substituted aryloxy group, the substituted heteroaryl group and the substituted heteroaryloxy group are selected from one or more of an amino group, a hydroxyl group and a carbonyl group; and / or The molar ratio of the first metal element in the first metal precursor solution to the choline phosphate compound is 1:(0.1 - 0.5); and / or The molar ratio of the second metal element in the second metal precursor to the choline phosphate compound is 1:(1 - 5).

5. The method for preparing a metal oxide material according to claim 2, characterized in that, The choline phosphate compound is selected from one or more of dodecyl choline phosphate, tetradecyl choline phosphate, hexadecyl choline phosphate, octadecyl choline phosphate, glycerophosphatidylcholine, cytidine diphosphate choline and ethoxyethyl choline phosphate.

6. The method for preparing a metal oxide material according to any one of claims 1 to 5, characterized in that, The alcohol in the alcohol solution is selected from aliphatic alcohol compounds with a boiling point above 200 °C; optionally, the alcohol in the alcohol solution is selected from aliphatic alcohol compounds with 8 to 20 carbon atoms; and / or The solvents of the first metal precursor solution and the alcohol solution are independently selected from aliphatic hydrocarbons with 8 to 20 carbon atoms; and / or In the step of mixing the first metal precursor solution and the alcohol solution for the first reaction, the molar ratio of the first compound in the first metal precursor solution to the alcohol in the alcohol solution is 1:(5 - 10), and / or the first reaction is carried out at 200 °C to 300 °C, and / or the time of the first reaction is 2 min to 8 min; and / or Before the step of the first reaction, the first metal precursor solution is subjected to a first vacuum degassing treatment, and / or the alcohol solution is subjected to a second vacuum degassing treatment; and / or The step of mixing the first reaction product, the choline phosphate compound and the second metal precursor for the second reaction includes: providing a mixed solution containing the choline phosphate compound and the second metal precursor, and mixing it with the first reaction product after the mixed solution is subjected to a third vacuum degassing treatment; and / or The second reaction is carried out at 200 °C to 300 °C, and / or the reaction time of the second reaction is 20 min to 60 min.

7. A metal oxide material, characterized in that, The metal oxide material includes a first metal element and a second metal element. The oxide of the first metal element in the first valence state is a first metal oxide, and the oxide of the second metal element in the second valence state is a second metal oxide; one of the first metal oxide and the second metal oxide is a trigonal system or a hexagonal system, and the other is a cubic system.

8. The metal oxide material according to claim 7, characterized in that, The first metal oxide is a trigonal system or a hexagonal system, and the second metal oxide is a cubic system; the first metal element is selected from Zn, Al, In, Fe, V or Cr. Correspondingly, the first metal oxide is ZnO, Al2O3, In2O3, Fe2O3, V2O3 or Cr2O3; the second metal element is selected from Mg, Ca, Zr, Ni or Cu. Correspondingly, the second metal oxide is MgO, CaO, ZrO2, NiO or Cu2O; Alternatively, the first metal oxide is a cubic system, and the second metal oxide is a trigonal system or a hexagonal system; the first metal element is selected from Mg, Ca, Zr, Ni or Cu. Correspondingly, the first metal oxide is MgO, CaO, ZrO2, NiO or Cu2O; the first metal element is selected from Zn, Al, In, Fe, V or Cr. Correspondingly, the first metal oxide is ZnO, Al2O3, In2O3, Fe2O3, V2O3 or Cr2O3; and / or The metal oxide material is tetrapod-shaped; and / or The percentage of the molar amount of the first metal element in the total molar amount of the metal oxide material is more than 50% and less than 100%; and / or The percentage of the molar amount of the second metal element in the total molar amount of the metal oxide material is higher than 0% and less than 50%.

9. An optoelectronic device, characterized in that, The optoelectronic device includes: A first electrode and a second electrode oppositely arranged; and A functional layer disposed between the first electrode and the second electrode; Wherein, the functional layer includes a plurality of stacked functional sub-layers; the material of at least one of the functional sub-layers includes the metal oxide material prepared by the preparation method of the metal oxide described in any one of claims 1 to 6, or the metal oxide material described in claim 7 or 8.

10. The optoelectronic device according to claim 9, characterized in that, The plurality of functional sub-layers include an electron functional layer; the material of the electron functional layer includes the metal oxide material prepared by the preparation method of the metal oxide described in any one of claims 1 to 6, or the metal oxide material described in claim 7 or 8; the first metal element is selected from Zn, Al or In, and the second metal element is selected from Mg, Ca or Zr.

11. The optoelectronic device according to claim 9, characterized in that, The plurality of the functional sub-layers includes a hole functional layer; the material of the hole functional layer includes a metal oxide material prepared by the preparation method of the metal oxide as described in any one of claims 1 to 6, or the metal oxide material as described in claim 7 or 8; the first metal element is selected from Ni or Cu, and the second metal element is selected from V or Cr.

12. The optoelectronic device according to any one of claims 9 to 11, characterized in that, The multiple functional sub-layers include a light-emitting layer; the material of the light-emitting layer includes an organic light-emitting material or a light-emitting quantum dot; the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the light-emitting quantum dot is selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, and the core-shell structure quantum dot includes one or more shell layers;The material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots, and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI group compounds, III-V group compounds, III-VI group compounds, IV-VI group compounds, or I-III-VI group compounds, wherein the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2; and / or, the structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + , M is a divalent metal cation, and M is selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ and Eu 2+ one or more of them, X is a halogen anion; and / or, the structural general formula of the organic perovskite quantum dots is CMX3, where C is formamidinium; and / or, the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation; and / or The materials of the first electrode and the second electrode independently include one or more of a metal, a carbon material, and a third metal oxide; wherein, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene, and carbon fiber, and / or the third metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO, and In2O3.

13. An electronic device, characterized in that, The electronic device includes an optoelectronic device as described in any one of claims 9 to 12.

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