A porous epoxy polyurethane polishing pad substrate, preparation method and use

Abstract

The present invention relates to the field of semiconductor manufacturing technology, and in particular to a novel chemical mechanical polishing pad for polishing at least one substrate selected from the group consisting of magnetic substrates, optical substrates, and semiconductor substrates. The present invention aims to address the prior art problem of substrate microstructural instability caused by uneven bubble volume and distribution in grinding and polishing substrates, which results in decreased performance and increased wear attenuation frequency in grinding and polishing. The present invention relates to a porous epoxy polyurethane polishing pad substrate, preparation method, and use. The polyurethane prepolymer is end-capped with an epoxy modifier, replacing traditional NCO groups with epoxy groups in the curing reaction. This fundamentally avoids the problem of large pores forming within the polishing pad due to the reaction of NCO groups with moisture in the air to generate CO₂ gas.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor manufacturing, relates to a preparation method of a polishing pad substrate, and in particular to a porous epoxy polyurethane polishing pad substrate, a preparation method and use thereof. Background Art

[0002] In integrated circuit manufacturing, chemical mechanical polishing (CMP) systems typically include three precision polishing steps. Key process parameters (including polishing pressure, polishing pad material selection, structural configuration, and hardness control) must be precisely adjusted to meet the differentiated goals of each step. As a core consumable in the CMP process, the physical and chemical properties of the polishing pad directly determine the quality of wafer surface planarization.

[0003] The standard technical configuration of traditional CMP includes a polishing head assembly, a rotating table, and a fluid delivery system. The polishing head secures the wafer substrate through methods such as adsorption, ensuring that its polishing surface contacts the polishing layer of a polishing pad mounted on the tabletop and maintains a preset contact pressure. During the process, the polishing fluid is evenly distributed across the polishing pad surface through a precision distribution system and, under the influence of centrifugal force, penetrates the wafer-polishing layer interface. By driving the wafer and polishing pad in relative rotation, a circular polishing track is formed on the wafer surface. The synergistic effect of chemical etching and mechanical abrasion by the polishing medium enables precise control of the surface microtopography.

[0004] U.S. Patent Application No. US20060442076A discloses a polyurethane polishing pad comprising a polymeric matrix having an upper polishing surface; the top polishing surface comprises polymeric polishing abrasive particles or polymeric polishing abrasive particles formed by abrasive conditioning. The polymeric polishing abrasive particles extend from the polymeric matrix and represent the portion of the top polishing surface that can contact the substrate during polishing. The polymeric polishing particles are derived from a polymeric material having an overall tensile strength of at least 6500 psi (44.8 MPa) and an overall tear strength of at least 250 lb / in.

[0005] However, the existing polyurethane polishing pad manufacturing technology still has the following technical problems:

[0006] Defects in cell structure control: Side reactions between isocyanate (NCO) groups in the prepolymer system and residual water or ambient humidity can lead to abnormal gas release, resulting in irregularly shaped, oversized cells. These structural defects can have multiple negative consequences: a) localized abrasive accumulation, significantly increasing the risk of surface scratches; and b) uneven pressure distribution, resulting in abnormally increased surface waviness.

[0007] Curing process instability: The high reactivity of the NCO group makes it difficult to control the reaction kinetics during the high-temperature curing stage. This manifests as local variations in crosslink density, uneven residual stress distribution, and excessive dispersion in mechanical properties. These defects directly lead to reduced polishing performance of the polishing pad and difficulty ensuring batch-to-batch performance consistency.

[0008] Microtexture decay: The surface groove structure formed by traditional processes undergoes plastic deformation under continuous mechanical stress, which seriously restricts the process stability.

[0009] In addition, on the one hand, there are differences in understanding among those skilled in the art; on the other hand, the inventor studied a large number of documents and patents when making the present invention, but due to space limitations, not all details and contents are listed in detail. However, this does not mean that the present invention does not have the characteristics of these prior arts. On the contrary, the present invention already has all the characteristics of the prior art, and the applicant reserves the right to add relevant prior art to the background art. Summary of the Invention

[0010] In response to the aforementioned technical problems, the present invention relates to a novel chemical mechanical polishing pad for polishing at least one substrate selected from the group consisting of magnetic substrates, optical substrates, and semiconductor substrates. The present invention aims to address the prior art problem of substrate microstructural instability caused by uneven bubble volume and distribution in substrates used in grinding and polishing, which in turn leads to decreased substrate performance and increased wear attenuation frequency.

[0011] One of the objects of the present invention is to provide a porous epoxy polyurethane polishing pad substrate, the components of which are selected from the following group:

[0012] 1-30 parts by weight of diol, 2-25 parts by weight of diisocyanate compound, 1-5 parts by weight of epoxy modifier, 0.4-3.0 parts by weight of chain extender, and 0.0001-0.05 parts by weight of dibutyltin dilaurate;

[0013] The invention comprises 1 to 30 parts by weight of polyol, 2 to 25 parts by weight of diisocyanate compound, 1 to 5 parts by weight of epoxy modifier, 0.4 to 3.0 parts by weight of chain extender, and 0.0001 to 0.05 parts by weight of dibutyltin dilaurate.

[0014] According to a preferred embodiment, the diisocyanate compound is selected from one or more of the following components:

[0015] 1,6-hexanediisocyanate, isophorone diisocyanate, p-cyclohexyl isocyanate, toluene diisocyanate, diphenylmethane diisocyanate, tea diisocyanate, toluidine diisocyanate, 3,3'-ditolyl diisocyanate, diphenyl-4,4-diisocyanate, tetramethylxylene diisocyanate, p-phenylene diisocyanate, xylylene diisocyanate;

[0016] The diol is selected from one of the following components:

[0017] Polytetramethylene ether glycol, polypropylene glycol, polyethylene glycol, polyester diol;

[0018] The epoxy modifier is selected from one or more of the following components:

[0019] Glycidol, 1,3-diglycidyl ether glycerol, propylene glycol diglycidyl ester, 1-[4-(2-hydroxyethyl)phenoxy]-2,3-epoxypropane, oxetane-3-methanol, 3-hydroxytetrahydrofuran, 2-(tetrahydro-2H-pyran-2-yl)ethanol;

[0020] The chain extender is selected from one or more of the following components:

[0021] Tetraethylenepentamine, triethylenediamine, 4,4'-methylenebis-(2-chloroaniline), 4,4'-methylenebis-(3-chloro-2,6-diethylaniline), diethyltoluenediamine, dimethylthiotoluenediamine, 4,4-(sec-butylamino)diphenylmethane, 1,3-propylene glycol di-(4-aminobenzoate), 4,4-methylene-bis-(2,6-diethylaniline), 4,4-methylene-bis-(2,6-diisopropylaniline), 4,4-methylene-bis-(2-isopropyl-6-methylaniline), 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline, 4,4'-methylene-bis-(2-chloroaniline), 4,4-methylenebis(N-sec-butylaniline).

[0022] According to a preferred embodiment, the molar ratio of the NCO groups to the hydroxyl groups of the diisocyanate compound is 1.5 to 3.0. Preferably, the molar ratio of the NCO groups to the hydroxyl groups of the diisocyanate compound is 1.5. The molar ratio of the NCO groups to the hydroxyl groups of the diisocyanate compound is 3.0.

[0023] According to a preferred embodiment, the porous epoxy polyurethane polishing pad substrate component is selected from the following group:

[0024] By weight, 3.4 parts of diphenylmethane diisocyanate, 13.5 parts of polypropylene glycol (molecular weight 1000), 1 part of glycidol, 0.01 parts of dibutyltin dilaurate and 1.6 parts of tetraethylenepentamine.

[0025] According to a preferred embodiment, the porous epoxy polyurethane polishing pad substrate component is selected from the following group:

[0026] By weight, 7.2 parts of toluene diisocyanate, 13.2 parts of polytetramethylene ether glycol (650), 3 parts of propylene oxide, 0.03 parts of dibutyltin dilaurate and 4.8 parts of tetraethylene pentamine.

[0027] According to a preferred embodiment, the porous epoxy-polyurethane polishing pad substrate component further comprises no more than 5 parts by weight of heat-expandable microspheres.

[0028] One of the objectives of the present invention is to provide a porous epoxy polyurethane polishing pad substrate for use in grinding or polishing.

[0029] One of the objects of the present invention is to provide a method for preparing a porous epoxy polyurethane polishing pad substrate, which comprises the following steps:

[0030] At 80° C., 2 to 25 parts by weight of a diisocyanate compound are mixed with 1 to 30 parts by weight of a polyol, or 2 to 25 parts by weight of a diisocyanate compound are mixed with 1 to 30 parts by weight of a diol;

[0031] Add 1 to 5 parts of epoxy modifier;

[0032] Add 0.0001-0.05 parts of dibutyltin dilaurate and 0.4-3.0 parts of chain extender;

[0033] Mix at a set speed of 1000 rpm for 1-2 min;

[0034] Thermal cycle heating cure.

[0035] One of the objectives of the present invention is to provide a porous epoxy polyurethane polishing pad prepared using the porous epoxy polyurethane polishing pad substrate of the present invention.

[0036] According to a preferred embodiment, the thermal cycle heating curing comprises:

[0037] Stage 1: heating at 110°C for 12 h;

[0038] Second stage: adjust the temperature to 90°C and maintain it for 6 h.

[0039] According to a preferred embodiment, 3.4 parts by weight of a diisocyanate compound (toluene diisocyanate) and 13.5 parts of polypropylene glycol are mixed at 80°C, followed by the addition of 0.01 parts of dibutyltin dilaurate and 1.6 parts of a chain extender (tetraethylene pentamine). Preferably, 1 part of glycidol is also added during this step.

[0040] According to a preferred embodiment, 7.2 parts by weight of a diisocyanate compound (toluene diisocyanate) and 13.2 parts of polytetramethylene ether glycol (650) are mixed at 80°C, followed by the addition of 0.03 parts of dibutyltin dilaurate and 4.8 parts of a chain extender (tetraethylene pentamine). Preferably, 3 parts of glycidol are also added in this step.

[0041] According to a preferred embodiment, the mixing is performed at a set speed of 1000 rpm for 1 min.

[0042] One of the objects of the present invention is to provide a substrate for preparing a polishing pad, wherein the substrate density is not less than 0.63 g / cm 3 .

[0043] The present invention relates to a method for preparing a novel chemical mechanical polishing pad, or polishing pad substrate. This method uses an epoxy modifier to cap a polyurethane prepolymer, replacing traditional NCO groups with epoxy groups in the curing reaction. This fundamentally avoids the problem of large air pores forming within the polishing pad due to the reaction of NCO groups with moisture in the air to generate CO2 gas. Specifically, the beneficial effects of this technical solution are as follows:

[0044] 1. Eliminate NCO group side reactions and improve pore uniformity (reaction formula: R-NCO+H2O→R-NH2+CO2↑)

[0045] The curing of current polyurethane polishing pads relies on the reaction of unreacted NCO groups in the prepolymer with chain extenders (such as amines) or ambient moisture. This reaction generates CO2 gas. The polyurethane polishing pad matrix currently used generally contains a large number of pores of varying sizes and uneven distribution, which affect the pad's density and stiffness, leading to variations in the height of surface roughness peaks and resulting in errors in surface topography measurements (Research Progress in Chemical Mechanical Polishing Pads).

[0046] The present invention caps a toluene diisocyanate-terminated polypropylene glycol prepolymer with glycidol, converting the NCO groups at the prepolymer terminals into epoxy groups (reaction formula: R-NCO + HO-CH2-CH(O)-CH2-OH → RO-CH2-CH(O)-CH2-O- + NH3↑). This allows the curing reaction to rely entirely on the addition reaction of the epoxy groups with an amine chain extender (reaction formula: epoxy + NH2-R → cross-linked network). Because epoxy groups are insensitive to moisture, the capped prepolymer essentially does not generate CO2 gas during the chain extension reaction, thus preventing the formation of large pores and significantly improving the uniformity of the pores within the polishing pad.

[0047] 2. Optimize the curing process and enhance the stability of the cross-linking network

[0048] The present invention adopts a staged temperature-raising curing process, wherein in the first stage (heating to 110°C within 30 minutes and maintaining for 12 hours), high temperature promotes a rapid ring-opening reaction between epoxy groups and tetraethylenepentamine chain extenders to form a preliminary cross-linked network; in the second stage (cooling to 90°C and maintaining for 6 hours), low temperature slowly releases residual stress, reduces microcracks, and ensures that the chain extender fully penetrates to the ends of the prepolymer segments, thereby increasing the cross-linking density.

[0049] 3. Precisely control pore structure to improve polishing performance

[0050] This invention achieves uniform pore size distribution by precisely controlling the amount of hollow microspheres and combining it with a CO2-free curing system. Compared to traditional processes, this technical solution significantly improves pore uniformity. The uniform pore structure reduces local pressure fluctuations during polishing, thereby reducing the substrate surface scratch rate. It is particularly suitable for high-precision polishing applications such as magnetic and optical substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 Schematic diagram of the synthesis route of the epoxy polyurethane porous material of the present invention;

[0052] Figure 2 1 is a stress-strain curve diagram of the epoxy polyurethane porous material with different microsphere contents of the present invention;

[0053] Figure 3 Schematic diagram of the density of epoxy polyurethane porous materials with different microsphere contents of the present invention;

[0054] Figure 4 Schematic diagram of the hardness of epoxy polyurethane porous materials with different microsphere contents of the present invention;

[0055] Figure 5 Schematic diagram of the compression rate of epoxy polyurethane porous materials with different microsphere contents of the present invention;

[0056] Figure 6 These are SEM photos of epoxy polyurethane porous materials with different microsphere contents of the present invention. DETAILED DESCRIPTION

[0057] In the description of the present invention, terms are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly indicate the number of technical features indicated. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0058] Figure 1 The synthesis route and preparation process of the substrate (porous epoxy polyurethane material) involved in the present invention are shown. Specifically, a polyether diol and an isocyanate react to form an NCO-terminated prepolymer-1, which then reacts with an epoxy modifier (such as propylene oxide) to form an epoxy-terminated prepolymer-2. The epoxy-terminated prepolymer-2 is then mixed with heat-expandable microspheres and tetraethylene pentamine to form the porous epoxy polyurethane material. The resulting material undergoes casting and curing steps to become a polishing pad with a polishing layer.

[0059] Example 1

[0060] In this embodiment, the following steps are used to prepare a polishing pad without a filled polishing layer:

[0061] (1) 199.7 g of polytetramethylene glycol prepolymer and 29.6 g of glycidol were mixed at 80° C., wherein the polytetramethylene glycol prepolymer was terminated with toluene diisocyanate (TDI) containing 8.4% by weight of unreacted NCO groups;

[0062] (2) Add 0.23 g of dibutyltin dilaurate to the above mixture and continue mixing at 80°C for 1 hour;

[0063] (3) Add 15.14 g of tetraethylenepentamine (TETA) to the mixture and mix in a vortex mixer at a set speed of 1000 rpm for 1 minute;

[0064] Pour the above mixture into the prepared mold;

[0065] The mold containing the mixture is placed in an oven and cured using hot circulating air.

[0066] The curing process is divided into two stages:

[0067] Stage 1: Increase the curing temperature from room temperature to 110°C within 30 minutes and maintain it for 12 hours;

[0068] Second stage: adjust the curing oven temperature to 90°C and maintain it for 6 hours.

[0069] Example 2

[0070] In this embodiment, the following steps are used to prepare a polishing pad filled with a polishing layer:

[0071] (1) 199.7 g of polytetramethylene glycol prepolymer and 29.6 g of glycidol were mixed at 80° C., wherein the polytetramethylene glycol prepolymer was terminated with toluene diisocyanate (TDI) containing 8.4% by weight of unreacted NCO groups;

[0072] (2) Add 0.23 g of dibutyltin dilaurate to the above mixture and continue mixing at 80°C for 1 hour;

[0073] (3) 15.14 g of tetraethylenepentamine (TETA) and 2.45 g of hollow microspheres (Akzo Nobel) were added to the mixture and mixed in a vortex mixer at a set speed of 1000 rpm for 1.5 min;

[0074] Pour the above mixture into the prepared mold;

[0075] The mold containing the mixture is placed in an oven and cured using hot circulating air.

[0076] The curing process is divided into two stages:

[0077] Stage 1: Increase the curing temperature from room temperature to 110°C within 30 minutes and maintain it for 12 hours;

[0078] Second stage: adjust the curing oven temperature to 90°C and maintain it for 6 hours.

[0079] Example 3

[0080] In this embodiment, the following steps are used to prepare a polishing pad filled with a polishing layer:

[0081] (1) 199.7 g of polytetramethylene glycol prepolymer and 29.6 g of glycidol were mixed at 80° C., wherein the polytetramethylene glycol prepolymer was terminated with toluene diisocyanate (TDI) containing 8.4% by weight of unreacted NCO groups;

[0082] (2) Add 0.23 g of dibutyltin dilaurate to the above mixture and continue mixing at 80°C for 1 hour;

[0083] (3) 15.14 g of tetraethylenepentamine (TETA) and 6.12 g of hollow microspheres (Akzo Nobel) were added to the mixture and mixed in a vortex mixer at a set speed of 1000 rpm for 1.5 min;

[0084] Pour the above mixture into the prepared mold;

[0085] The mold containing the mixture is placed in an oven and cured using hot circulating air.

[0086] The curing process is divided into two stages:

[0087] Stage 1: Increase the curing temperature from room temperature to 110°C within 30 minutes and maintain it for 12 hours;

[0088] Second stage: adjust the curing oven temperature to 90°C and maintain it for 6 hours.

[0089] Example 4

[0090] The preparation method involved in this embodiment is consistent with the preparation method of the above embodiment 2, the difference being that the ratio of the raw materials used is different.

[0091] (1) 189.7 g of a polypropylene glycol prepolymer and 29.6 g of glycidol were mixed at 80°C, wherein the polypropylene glycol prepolymer was terminated with toluene diisocyanate containing 8.86% by weight of unreacted NCO groups;

[0092] (2) Add 0.43 g of dibutyltin dilaurate to the above mixture and continue mixing at 80°C for 1 hour;

[0093] (3) 11.85 g of tetraethylenepentamine chain extender and 2.31 g of hollow microspheres (Akzo Nobel) were added to the mixture and mixed in a vortex mixer at a set speed of 1000 rpm for 1.5 min;

[0094] Pour the above mixture into the prepared mold;

[0095] The mold containing the mixture is placed in an oven and cured using hot circulating air.

[0096] The curing process is divided into two stages:

[0097] Stage 1: Increase the curing temperature from room temperature to 110°C within 30 minutes and maintain it for 12 hours;

[0098] Second stage: adjust the curing oven temperature to 90°C and maintain it for 6 hours.

[0099] Example 5

[0100] The preparation method involved in this embodiment is consistent with the preparation method of the above embodiment 2, the difference being that the ratio of the raw materials used is different.

[0101] In this embodiment, the following steps are used to prepare a polishing pad filled with a polishing layer:

[0102] (1) 269.7 g of polytetramethylene glycol prepolymer and 29.6 g of glycidol were mixed at 80° C., wherein the polytetramethylene glycol prepolymer was terminated with 6.23% by weight of unreacted NCO groups of toluene diisocyanate;

[0103] (2) Add 0.3 g of dibutyltin dilaurate to the above mixture and continue mixing at 80°C for 1 hour;

[0104] (3) 15.14 g of tetraethylenepentamine chain extender and 7.86 g of hollow microspheres (Akzo Nobel) were added to the mixture and mixed in a vortex mixer at a set speed of 1000 rpm for 2 min;

[0105] Pour the above mixture into the prepared mold;

[0106] The mold containing the mixture is placed in an oven and cured using hot circulating air.

[0107] The curing process is divided into two stages:

[0108] Stage 1: Increase the curing temperature from room temperature to 110°C within 30 minutes and maintain it for 12 hours;

[0109] Second stage: adjust the curing oven temperature to 90°C and maintain it for 6 hours.

[0110] The stress, mechanical properties, density, Shore hardness and compressibility of the epoxy polyurethane porous materials with different microsphere contents in Example 2 (epoxy polyurethane porous material with 1% microsphere content) and Example 3 (epoxy polyurethane porous material with 2.5% microsphere content) were tested. The results showed that Figures 2 to 5 and Table 1. EPPU-1% represents the sample in Example 2; EPPU-2.5% represents the sample in Example 3.

[0111] Table 1 Mechanical properties of epoxy polyurethane (EPPU) porous materials with different microsphere contents

[0112]

[0113] according to Figure 2 It can be seen that the strain value of the EPPU-2.5% material reaches its limit (225%) at a pressure close to 3 MPa, while the strain value of the EPPU-1% material reaches its limit (300%) at a pressure close to 5 MPa. These results show that the EPPU-1% material exhibits a greater strain capacity (300%) at a higher pressure (5 MPa), indicating that its ductility is better than that of the EPPU-2.5% material.

[0114] According to Table 1, the tensile strength of the EPPU-2.5% material is 2.82 Mpa, the tensile strain is 213.3%, and the Young's modulus is 4.67 Mpa. The tensile strength of the EPPU-1% material is 5.11 Mpa, the tensile strain is 296.9%, and the Young's modulus is 5.01 Mpa. The tensile strength, tensile strain, and Young's modulus of the EPPU-1% material are all higher than those of the EPPU-2.5% material. The above results show that the EPPU-1% material has better tensile strength, ductility, and rigidity than the EPPU-2.5% material, which is consistent with the results of the previous study. Figure 2 The results shown are consistent.

[0115] according to Figure 3 It can be seen that the density of EPPU-2.5% material is 0.63 g / cm 3 The density of EPPU-1% material is 0.86 g / cm 3 The above results show that the EPPU-1% material is denser and has higher strength.

[0116] according to Figure 4It can be seen that the Shore hardness of the EPPU-2.5% material is 15.9 D. The Shore hardness of the EPPU-1% material is 21.2 D. The above results show that compared with the EPPU-2.5% material, the EPPU-1% material performs better in terms of compression and wear resistance.

[0117] according to Figure 5 The compression rate of the EPPU-2.5% material is 15.7%, while that of the EPPU-1% material is 10.7%. These results indicate that the EPPU-1% material deforms less under compression than the EPPU-2.5% material.

[0118] according to Figure 6 From the SEM of the material shown in , it can be seen that compared with the EPPU-2.5% material, the EPPU-1% material has fewer pores, more uniform pore size, and a relatively uniform pore distribution.

[0119] The polishing pad substrate of the present invention achieves synergistic optimization of wafer polishing performance by controlling the tensile strength within 3-15 MPa, regulating the elongation at break within 100-300%, optimizing the density to 0.60-0.90 g / cm³, and adjusting the hardness within the range of 20-60 D. The synergistic effect of tensile strength and elongation at break imparts the substrate with excellent mechanical stability and deformation resistance, ensuring the long-term consistency of the pad structure during the polishing process. The low density facilitates the formation of a uniformly distributed microporous structure, which serves to store and transport polishing fluid, discharge removed materials, and ensure a stable polishing process. The moderate hardness range reduces the risk of wafer scratches while ensuring surface support strength. In particular, when the microsphere addition amount is 1%, the above performance parameters reach an optimal equilibrium state, significantly improving the wafer surface material removal rate, achieving sub-nanometer surface roughness and ultra-high flatness, and effectively reducing the occurrence of micro-scratches and surface defects during the polishing process. Experiments on material properties have shown that this parameter combination enables a polishing pad with both high cutting efficiency and low damage, meeting the stringent wafer surface quality requirements of advanced manufacturing processes. The high hardness, tensile strength, high tensile strain, low compressibility, and high density of the EPPU-1% material indicate its suitability for high-precision, high-load polishing tasks, particularly those requiring high hardness, strength, and stability in applications such as semiconductor wafers and optical lenses.

[0120] It should be noted that the above-described specific embodiments are illustrative only. Those skilled in the art may devise various solutions based on the disclosure of the present invention, and such solutions fall within the scope of the present invention and are intended to be protected by the present invention. Those skilled in the art should understand that the present description and its accompanying drawings are intended to be illustrative only and are not intended to limit the scope of the claims. The scope of protection of the present invention is defined by the claims and their equivalents.

Claims

1. A porous epoxy polyurethane polishing pad substrate, characterized in that: Its components are: 1-30 parts by weight of diol, 2-25 parts by weight of diisocyanate compound, 1-5 parts by weight of epoxy modifier, 0.4-3.0 parts by weight of chain extender, and 0.0001-0.05 parts by weight of dibutyltin dilaurate; Wherein, the diisocyanate compound is selected from one or more of the following components: 1,6-hexanediisocyanate, isophorone diisocyanate, p-cyclohexyl isocyanate, toluene diisocyanate, diphenylmethane diisocyanate, tea diisocyanate, toluidine diisocyanate, 3,3'-ditolyl diisocyanate, diphenyl-4,4-diisocyanate, tetramethylxylene diisocyanate, p-phenylene diisocyanate, xylylene diisocyanate; The diol is selected from one of the following components: Polytetramethylene ether glycol, polypropylene glycol, polyethylene glycol, polyester diol; The epoxy modifier is selected from one or more of the following components: Glycidol, 1,3-diglycidyl ether glycerol, propylene glycol diglycidyl ester, 1-[4-(2-hydroxyethyl)phenoxy]-2,3-epoxypropylene; The chain extender is selected from one or more of the following components: Tetraethylenepentamine, triethylenediamine, 4,4'-methylenebis-(2-chloroaniline), 4,4'-methylenebis-(3-chloro-2,6-diethylaniline), diethyltoluenediamine, dimethylthiotoluenediamine, 4,4-(sec-butylamino)diphenylmethane, 1,3-propylene glycol di-(4-aminobenzoate), 4,4-methylene-bis-(2,6-diethylaniline), 4,4-methylene-bis-(2,6-diisopropylaniline), 4,4-methylene-bis-(2-isopropyl-6-methylaniline), 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline, 4,4'-methylene-bis-(2-chloroaniline), 4,4-methylenebis(N-sec-butylaniline), The porous epoxy polyurethane polishing pad substrate is prepared as follows: S1: mixing 2 to 25 parts by weight of a diisocyanate compound with 1 to 30 parts of a polyol; S2: subsequently adding 1 to 5 parts of an epoxy modifier; S3: adding 0.0001 to 0.05 parts of dibutyltin dilaurate and 0.4 to 3.0 parts of a chain extender; S4: mixing; and S5: heating and curing.

2. The porous epoxy polyurethane polishing pad substrate according to claim 1, wherein The molar ratio of the NCO group to the hydroxyl group of the diisocyanate compound is 1.5 to 3.

0.

3. The porous epoxy polyurethane polishing pad substrate according to claim 1, wherein The porous epoxy polyurethane polishing pad substrate component is selected from the following group: 3.4 parts by weight of toluene diisocyanate, 13.5 parts by weight of polypropylene glycol, 1 part by weight of propylene oxide, 0.01 parts by weight of dibutyltin dilaurate, and 1.6 parts by weight of tetraethylenepentamine.

4. The porous epoxy polyurethane polishing pad substrate according to claim 1, wherein The porous epoxy polyurethane polishing pad substrate component further comprises no more than 5 parts by weight of heat-expandable microspheres.

5. Use of the porous epoxy polyurethane polishing pad substrate according to any one of claims 1 to 4 in grinding or polishing.

6. A method for preparing a porous epoxy polyurethane polishing pad substrate, characterized in that: The preparation method comprises the following steps: At 80°C, 2 to 25 parts by weight of a diisocyanate compound and 1 to 30 parts by weight of a diol are mixed; Add 1 to 5 parts of epoxy modifier; Add 0.0001-0.05 parts of dibutyltin dilaurate and 0.4-3.0 parts of chain extender; Mix at a set speed of 1000 rpm for 1-2 min; Thermal cycle heating curing, Wherein, the diisocyanate compound is selected from one or more of the following components: 1,6-hexanediisocyanate, isophorone diisocyanate, p-cyclohexyl isocyanate, toluene diisocyanate, diphenylmethane diisocyanate, tea diisocyanate, toluidine diisocyanate, 3,3'-ditolyl diisocyanate, diphenyl-4,4-diisocyanate, tetramethylxylene diisocyanate, p-phenylene diisocyanate, xylylene diisocyanate; The diol is selected from one of the following components: Polytetramethylene ether glycol, polypropylene glycol, polyethylene glycol, polyester diol; The epoxy modifier is selected from one or more of the following components: Glycidol, 1,3-diglycidyl ether glycerol, propylene glycol diglycidyl ester, 1-[4-(2-hydroxyethyl)phenoxy]-2,3-epoxypropylene; The chain extender is selected from one or more of the following components: Tetraethylenepentamine, triethylenediamine, 4,4'-methylenebis-(2-chloroaniline), 4,4'-methylenebis-(3-chloro-2,6-diethylaniline), diethyltoluenediamine, dimethylthiotoluenediamine, 4,4-(sec-butylamino)diphenylmethane, 1,3-propylene glycol di-(4-aminobenzoate), 4,4-methylene-bis-(2,6-diethylaniline), 4,4-methylene-bis-(2,6-diisopropylaniline), 4,4-methylene-bis-(2-isopropyl-6-methylaniline), 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline, 4,4'-methylene-bis-(2-chloroaniline), 4,4-methylenebis(N-sec-butylaniline).

7. The preparation method according to claim 6, characterized in that The thermal cycle heating curing comprises: Stage 1: heating at 110°C for 12 h; Second stage: adjust the temperature to 90°C and maintain it for 6 h.

8. The preparation method according to claim 6 or 7, characterized in that The molar ratio of the NCO group to the hydroxyl group of the diisocyanate compound is 1.5 to 3.

0.

9. A substrate for preparing a polishing pad, characterized in that: The density of the substrate prepared based on any one of claims 1 to 4 or the preparation method according to claims 6 to 8 is not less than 0.63 g / cm 3 .

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