Cooling device and cooling method for continuous reaction of silicon wafer after chemical vapor deposition

Abstract

The invention discloses a cooling device and a cooling method for continuous reaction of a silicon wafer after chemical vapor deposition, and relates to the technical field of semiconductor production and manufacturing, the cooling device comprises a base, a workbench fixedly mounted on the top surface of the base, a connecting plate and a processor fixedly mounted on the side wall of the base, two brackets arranged on the top surface of the base, and a fixed plate fixedly mounted on the right side wall of the bracket, according to the invention, non-contact clamping cooling is carried out on a silicon wafer through cooling gas sprayed by the first air spraying head and the second air spraying head, so that the problems of silicon wafer damage and pollution possibly caused by direct clamping of a high-temperature silicon wafer by a traditional manipulator are effectively avoided; according to the silicon wafer cooling device, the safety and the cleanliness of the silicon wafer cooling process are greatly improved, the quality of the silicon wafer is guaranteed, and meanwhile, the flow and the pressure of cooling gas are dynamically adjusted according to the cooling state of the silicon wafer by means of cooperation of the laser range finder and the reflecting plate, data processing of the processor and accurate regulation and control of the exhaust pump.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor production and manufacturing, and in particular to a silicon wafer continuous reaction cooling device and a cooling method after chemical vapor deposition. Background Art

[0002] In the field of semiconductor manufacturing, surface deposition is one of the important processes for silicon wafer surface treatment. This process uses the method of chemical vapor deposition (CVD) to make the silicon wafer react chemically with the gas, thereby depositing an oxide layer on the surface of the silicon wafer. This oxide layer can reduce or eliminate the reflected light on the surface of the silicon wafer, increase the amount of light transmitted, and thus improve the photoelectric conversion efficiency of the silicon wafer. Therefore, chemical vapor deposition equipment is widely used in semiconductor production.

[0003] In the traditional semiconductor manufacturing process, the cooling method of silicon wafers after the chemical vapor deposition reaction is completed is relatively simple. Among them, natural cooling accounts for a certain proportion. This method only relies on the natural heat dissipation of the surrounding environment and lacks the assistance of a special efficient heat dissipation mechanism. As a result, the heat dissipation of the silicon wafer is extremely slow. In the large-scale silicon wafer production scenario, the extra time consumed by each silicon wafer due to natural cooling continues to accumulate, which seriously slows down the overall production rhythm and greatly extends the production cycle, making it difficult to meet the stringent requirements of modern industry for efficient and fast production; Another common traditional practice is to use a robot to directly grab the silicon wafer at high temperature and transfer it to a specific cooling area. However, when the silicon wafer is at high temperature, its internal crystal structure and physical properties will change, and the material will become relatively fragile, just like glass at high temperature is easier to break. When the robot grasps such fragile silicon wafers, even a slight pressure change or a small displacement deviation is very likely to leave scratches on the surface of the silicon wafer that are difficult to repair, or even cause cracks. In severe cases, the silicon wafer will directly break and be scrapped, causing the scrap rate of silicon wafers to rise sharply. Not only that, the robot performs tasks in a high-temperature environment for a long time, and its own material properties will also suffer serious erosion. The continuous action of high temperature makes the metal parts of the robot prone to softening and oxidation, resulting in a decrease in its structural strength, and frequent wear and deformation problems. It seriously affects the stability and continuity of production. In addition, during the cooling process, the heat dissipation conditions of different parts of the silicon wafer vary greatly, making it difficult to maintain a uniform cooling rate. This uneven cooling will generate thermal stress inside the silicon wafer. The continuous action of thermal stress will cause irreversible damage to the internal crystal structure of the silicon wafer, thereby changing the electrical properties of the silicon wafer. For example, it will affect key parameters such as resistivity and carrier mobility. It will also weaken the mechanical properties of the silicon wafer and reduce its hardness and toughness. The degradation of these properties is directly reflected in the decline in the quality of the silicon wafer and the reduction in the yield rate, which has laid hidden dangers for the subsequent manufacture of semiconductor devices and seriously threatens the performance and reliability of semiconductor devices in practical applications. Therefore, based on the above retrieval and in combination with the prior art, a continuous reaction cooling device and cooling method for silicon wafers after chemical vapor deposition are proposed to solve the above problems. Summary of the Invention

[0004] The purpose of the present invention is to provide a continuous reaction cooling device and cooling method for silicon wafers after chemical vapor deposition to solve the problems raised in the above background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions: A continuous reaction cooling device for silicon wafers after chemical vapor deposition, comprising: a base, on the top surface of the base is fixedly installed a workbench, on the side wall of the base are fixedly installed a connecting plate and a processor, on the top surface of the base are provided two brackets, on the right side wall of the bracket is fixedly installed a fixing plate, at the center of the top surface of the fixing plate is fixedly installed a graphite placement seat two, on the front side wall of the workbench is fixedly installed a distribution box, on one side of the distribution box is provided a controller, on the top surface of the connecting plate is fixedly installed a mechanical gripper, the end of the mechanical gripper clamps a graphite placement seat one and is provided with a groove for placing a high-temperature silicon wafer thereon; on the workbench is installed a moving plate through a moving component, on the top surface of the moving plate is fixedly installed a robotic arm, at the output end of the robotic arm is fixedly installed a jet head one, on one side wall of the jet head is fixedly installed a reflector, on the rear side wall of the workbench are fixedly installed a storage tank and an exhaust pump, between the storage tank and the exhaust pump is provided a connecting pipe one, between the exhaust pump and the jet head one is provided a connecting pipe two, on the bracket is installed a driving plate through a driving component, on the top surface of the driving plate is provided a circular groove, on the top surface of the driving plate is fixedly installed a concave plate, at the bottom of the concave plate is fixedly installed an electric push rod, at the output shaft of the electric push rod is fixedly installed a jet head two, at the bottom of the jet head two is fixedly installed a laser range finder, on one side of the jet head two is provided a connecting pipe three communicating with the connecting pipe two, and a ball valve is provided in the connecting pipe three.

[0006] Preferably, the moving component includes: a driving motor one, which is fixedly installed on the right side wall of the workbench, on the top surface of the workbench is provided a moving groove, the inner wall of the moving groove is rotatably connected with a threaded rod one, the outer surface of the threaded rod one is threadedly connected with a moving block, the moving block moves in the moving groove and its top surface is connected with the bottom surface of the moving plate, and the output shaft of the driving motor one is connected with the right side wall of the threaded rod one.

[0007] Preferably, the driving component includes: two limiting plates, which are respectively fixedly installed on the right side walls of the two brackets, on the top surfaces of the brackets are provided sliding grooves, the inner wall of one of the sliding grooves is rotatably connected with a threaded rod two, the outer surface of the threaded rod two is threadedly connected with a slider, the slider moves in the sliding groove and its top surface is connected with the bottom surface of the driving plate, on the right side wall of one of the limiting plates is fixedly installed a driving motor two, and the output shaft of the driving motor two is connected with the right side wall of the threaded rod two.

[0008] The present invention also provides a method for continuously reacting and cooling a silicon wafer after chemical vapor deposition. The method is applied to the apparatus for continuously reacting and cooling a silicon wafer after chemical vapor deposition described in any one of the above, and the method includes the following steps: S1. Preliminary preparation step of the equipment: Provide the cooling device described in claims 1-3.

[0009] Preferably, S2. The operation of cooling the silicon wafer is as follows: S21. When cooling is required, the controller is used to adjust the robotic arm so that the first jet head is directly above the first graphite placement seat. S22. Before starting the exhaust pump, first, the controller precisely adjusts the gas flow rate and pressure of the first jet head to ensure that the ejected air flow can form a stable supporting force. When the exhaust pump is started, the cooling gas is ejected from the first jet head at a certain speed and pressure to form an air flow field. At this time, the robotic arm cooperates with the robotic gripper to rotate the first graphite placement seat and the silicon wafer thereon by 180°, so that the silicon wafer surface faces downward. During the rotation process, due to the impact and supporting effect of the air flow ejected from the first jet head on the silicon wafer, the silicon wafer is stably pressed inside the groove of the first graphite placement seat to prevent it from falling off. Next, the robotic gripper slowly moves upward while keeping the air flow ejected from the first jet head stable. As the first graphite placement seat gradually rises, the silicon wafer begins to float above the first jet head under the action of the air flow supporting force. To achieve stable suspension, the controller needs to continuously monitor the position of the silicon wafer and the intensity of the air flow ejected from the first jet head and make fine adjustments as needed. By precisely controlling the size and direction of the air flow, it can be ensured that the silicon wafer remains relatively stable in the suspended state, avoiding excessive displacement or shaking. In the suspended state of the silicon wafer, the first jet head continues to eject the cooling gas to cool one side of the silicon wafer. Since the supporting force formed by the air flow matches the gravity of the silicon wafer, the silicon wafer can maintain a stable suspended state, thus avoiding damage that may be caused by directly clamping the high-temperature silicon wafer by the manipulator. At the same time, the flow of the cooling gas also helps to accelerate the cooling process of the silicon wafer.

[0010] Preferably, S3. The step of cooling the other side of the silicon wafer is as follows: S31. When the laser emitted by the laser rangefinder is at the exact center of the reflector, open the ball valve in the third connecting pipe to inject the cooling gas into the second jet head to cool the other side of the silicon wafer. S32. Lower the second jet head by turning on the electric push rod. When the laser rangefinder detects approaching the reflector, the processor processes the data and converts it into an electrical signal for the exhaust pump to increase the power of the exhaust pump until the maximum power is achieved for rapid cooling, and the cooling gases ejected from the first jet head and the second jet head will clamp the silicon wafer without contacting the silicon wafer.

[0011] Preferably, S4: While the jet head 1 and the jet head 2 cool and clamp the silicon wafer, the gases released by the jet head 1 and the jet head 2 are precisely controlled in terms of pressure and flow rate to ensure that stable and uniform convection is formed on the surface of the silicon wafer by the two gas streams. After the cooling of the silicon wafer is completed, the ball valve in the connecting pipe 3 is closed and the vacuum pump is turned on. The vacuum suction pipe extracts the air in the jet head 2 to adsorb the silicon wafer on the bottom surface of the jet head 2. Then, the moving assembly and the driving assembly move synchronously.

[0012] Preferably, S5: The steps for transferring the cooled silicon wafer are as follows: S51: When the moving assembly reaches the rightmost side, at this time, the driving assembly has not reached the rightmost side yet. At this time, the driving assembly continues to move, and the robotic arm on the moving assembly is activated so that the jet head 1 is always directly below the jet head 2 to spray cooling gas on the silicon wafer below the jet head 2 to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, at this time, the silicon wafer is directly above the graphite placement seat 2. At this time, the jet head 1 stops working, and the robotic arm is activated to withdraw the jet head 1 from below the jet head 2. Then, the electric push rod is activated to place the silicon wafer in the inner groove of the graphite placement seat 2, and then the vacuum pump stops working; S52: Then, the electric push rod drives the jet head 2 to rise, and both the moving assembly and the driving assembly move to the starting position on the leftmost side; S53: The cooled silicon wafer is transported to the next step by the robotic hand and the above operations are repeated to cool the silicon wafer.

[0013] Preferably, during the entire cooling process, each component works orderly under the coordinated control of the controller and the processor to ensure the high efficiency and stability of the silicon wafer cooling and transfer process and ensure that the quality of the silicon wafer is not damaged.

[0014] Compared with the prior art, the beneficial effects of the present invention are: 1. In the present invention, the cooling gas ejected by the jet head 1 and the jet head 2 is used to perform non-contact clamping and cooling on the silicon wafer, effectively avoiding the problems of silicon wafer damage and contamination that may be caused by directly clamping a high-temperature silicon wafer with a traditional robotic hand, greatly improving the safety and cleanliness of the silicon wafer cooling process, ensuring the quality of the silicon wafer. At the same time, by using the cooperation of the laser rangefinder and the reflector, as well as the processing of data by the processor and the precise regulation of the exhaust pump, the dynamic adjustment of the flow rate and pressure of the cooling gas according to the cooling state of the silicon wafer is realized, making the cooling process more efficient and uniform, significantly shortening the time required for silicon wafer cooling, and improving the production efficiency; 2. In the present invention, by providing a moving component and a driving component, they move synchronously and cooperatively, and the moving distance is closely matched with the cooling time of the silicon wafer, achieving seamless connection between the cooling and transfer operations, reducing the idle time of the equipment and the operation steps, further improving the overall production efficiency. Moreover, during the entire cooling process, under the precise cooperative control of the controller and the processor, each component operates orderly, not only reducing the complexity and error probability of manual operation, but also enhancing the stability and reliability of the equipment operation, providing strong technical support for the semiconductor manufacturing process, helping to reduce production costs, and improving the market competitiveness of products. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the left - hand structure of the present invention; Figure 2 Schematic diagram of the right - hand structure of the present invention; Figure 3 Schematic diagram of the rear - side structure of the present invention; Figure 4 Schematic diagram of the bottom - view structure of the present invention; Figure 5 Schematic diagram of the disassembled structure of the moving component of the present invention; Figure 6 Schematic diagram of the disassembled structure of the driving component of the present invention; Figure 7 Schematic diagram of the bottom - view structure of the driving plate of the present invention; Figure 8 For the present invention Figure 2 Enlarged schematic diagram of the structure at A in the present invention.

[0016] In the figures: 1, base; 2, workbench; 3, connecting plate; 4, bracket; 5, distribution box; 6, controller; 7, processor; 8, mechanical gripper; 9, first graphite placement seat; 10, moving plate; 11, robotic arm; 12, first jet head; 13, reflector; 14, storage tank; 15, exhaust pump; 16, first connecting pipe; 17, second connecting pipe; 18, driving plate; 19, circular groove; 20, concave plate; 21, electric push rod; 22, second jet head; 23, laser rangefinder; 24, third connecting pipe; 25, vacuum pump; 26, vacuum suction pipe; 27, first driving motor; 28, moving groove; 29, first threaded rod; 30, moving block; 31, limiting plate; 32, sliding groove; 33, second threaded rod; 34, slider; 35, second driving motor; 36, fixing plate; 37, second graphite placement seat. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0018] In a typical implementation manner of the present application, please refer to Figures 1 to 8 As shown in the figure, it includes: a base 1, a workbench 2 is fixedly installed on the top surface of the base 1, a connecting plate 3 and a processor 7 are fixedly installed on the side wall of the base 1, two brackets 4 are arranged on the top surface of the base 1, a fixing plate 36 is fixedly installed on the right side wall of the bracket 4, and a graphite placement seat two 37 is fixedly installed at the center of the top surface of the fixing plate 36. A distribution box 5 is fixedly installed on the front side wall of the workbench 2, a controller 6 is arranged on one side of the distribution box 5, a mechanical gripper 8 is fixedly installed on the top surface of the connecting plate 3, the end of the mechanical gripper 8 clamps a graphite placement seat one 9 and is provided with a groove for placing a high-temperature silicon wafer on it; A moving plate 10 is installed on the workbench 2 through a moving component. A robotic arm 11 is fixedly installed on the top surface of the moving plate 10. A jet head one 12 is fixedly installed at the output end of the robotic arm 11. A reflector 13 is fixedly installed on the side wall of the jet head one 12. A storage box 14 and an exhaust pump 15 are fixedly installed on the rear side wall of the workbench 2. A connecting pipe one 16 is arranged between the storage box 14 and the exhaust pump 15. A connecting pipe two 17 is arranged between the exhaust pump 15 and the jet head one 12. A driving plate 18 is installed on the bracket 4 through a driving component. A circular groove 19 is opened on the top surface of the driving plate 18. A concave plate 20 is fixedly installed on the top surface of the driving plate 18. An electric push rod 21 is fixedly installed on the bottom surface of the concave plate 20. A jet head two 22 is fixedly installed on the output shaft of the electric push rod 21. A laser rangefinder 23 is fixedly installed on the bottom surface of the jet head two 22. A connecting pipe three 24 communicating with the connecting pipe two 17 is arranged on one side of the jet head two 22. A ball valve is arranged in the connecting pipe three 24.

[0019] The moving component includes: a driving motor one 27, the driving motor one 27 is fixedly installed on the right side wall of the workbench 2, a moving groove 28 is opened on the top surface of the workbench 2, a threaded rod one 29 is rotatably connected to the inner wall of the moving groove 28, a moving block 30 is threadedly connected to the outer surface of the threaded rod one 29, the moving block 30 moves in the moving groove 28 and its top surface is connected to the bottom surface of the moving plate 10, and the output shaft of the driving motor one 27 is connected to the right side wall of the threaded rod one 29.

[0020] The driving assembly includes: two limit plates 31, the two limit plates 31 are respectively fixedly installed on the right side walls of the two brackets 4, and a slide groove 32 is opened on the top surface of the bracket 4, and the inner wall of one of the slide grooves 32 is rotatably connected to a threaded rod 2 33, and the outer surface of the threaded rod 2 33 is threadedly connected to a slider 34, and the slider 34 moves in the slide groove 32 and the top surface is connected to the bottom surface of the driving plate 18, and a drive motor 2 35 is fixedly installed on the right side wall of one of the limit plates 31, and the output shaft of the drive motor 2 35 is connected to the right side wall of the threaded rod 2 33.

[0021] See also Figures 1 to 8 As shown, the present invention also provides a method for continuous reaction cooling of silicon wafers after chemical vapor deposition, the method is applied to any one of the above-mentioned devices for continuous reaction cooling of silicon wafers after chemical vapor deposition, and the method comprises the following steps: S1. The preliminary preparation steps of the equipment are as described above; S2. The operation of cooling the silicon wafer is as follows: S21, when cooling is required, the controller 6 adjusts the robot arm 11 so that the nozzle 12 is directly above the graphite placement seat 9; S22. Before turning on the exhaust pump 15, the gas flow and pressure of the nozzle 12 are first accurately adjusted through the controller 6 to ensure that the ejected airflow can form a stable supporting force. When the exhaust pump 15 is turned on, the cooling gas is ejected from the nozzle 12 at a certain speed and pressure to form an airflow field. At this time, the mechanical arm 11 cooperates with the mechanical gripper 8 to rotate the graphite placement seat 9 and the silicon wafer thereon by 180° so that the silicon wafer faces downward. During the rotation process, due to the impact and support of the airflow ejected from the nozzle 12 on the silicon wafer, the silicon wafer is stably pressed inside the groove of the graphite placement seat 9 to prevent it from falling off. Next, the mechanical gripper 8 slowly moves up while keeping the airflow ejected from the nozzle 12 stable. As the graphite placement seat 9 The silicon wafer gradually rises, and the silicon wafer begins to float above the nozzle 12 under the action of the airflow support force. In order to achieve stable suspension, the controller 6 needs to monitor the position of the silicon wafer and the airflow intensity ejected by the nozzle 12 in real time, and make fine adjustments as needed. By accurately controlling the size and direction of the airflow, it can ensure that the silicon wafer remains relatively stable in the suspended state to avoid excessive displacement or shaking. In the suspended state of the silicon wafer, the nozzle 12 continues to eject cooling gas to cool one side of the silicon wafer. Since the support force formed by the airflow matches the gravity of the silicon wafer, the silicon wafer can maintain a stable suspension state, thereby avoiding damage that may be caused by the manipulator directly clamping the high-temperature silicon wafer. At the same time, the flow of cooling gas also helps to accelerate the cooling process of the silicon wafer. It is worth mentioning that in order to ensure the stability and safety of the silicon wafer during suspension and cooling, the following measures can also be taken: A guide plate is arranged around the jet head 12 to guide the airflow and reduce the turbulence of the airflow; A feedback control mechanism is set in the controller 6 to adjust the gas flow rate and pressure of the first jet head 12 in real time according to the position and state of the silicon wafer. When the silicon wafer is in a suspended state, the distance between the silicon wafer and the first jet head 12 is monitored in real time through a laser rangefinder or other sensors to ensure that the silicon wafer is always in the optimal suspended position.

[0022] S3. The steps for cooling the other side of the silicon wafer are as follows: S31. When the laser emitted by the laser rangefinder 23 is at the exact center of the reflector 13, open the ball valve in the third connecting pipe 24 to inject the cooling gas into the second jet head 22 to cool the other side of the silicon wafer. S32. Lower the second jet head 22 by opening the electric push rod 21. When the laser rangefinder 23 detects approaching the reflector 13, the processor 7 processes the data and converts it into an electrical signal for the exhaust pump 15 to increase the power of the exhaust pump 15 until the maximum power is achieved for rapid cooling. Moreover, the cooling gases ejected from the first jet head 12 and the second jet head 22 will clamp the silicon wafer without contacting it.

[0023] S4. While the first jet head (12) and the second jet head (22) are cooling and clamping the silicon wafer, the gases released by the first jet head (12) and the second jet head (22) are precisely controlled in terms of pressure and flow rate to ensure that two stable and uniform convections are formed on the surface of the silicon wafer. When the cooling of the silicon wafer is completed, close the ball valve in the third connecting pipe (24) and turn on the vacuum pump (25). The vacuum suction pipe (26) extracts the air in the second jet head (22) to adsorb the silicon wafer on the bottom surface of the second jet head (22). Then, the moving assembly and the driving assembly move synchronously.

[0024] S5. The steps for transferring the cooled silicon wafer are as follows: S51. When the moving assembly reaches the rightmost side, at this time, the driving assembly has not reached the rightmost side yet. At this time, the driving assembly continues to move, and the robotic arm 11 on the moving assembly is activated so that the first jet head 12 is always directly below the second jet head 22, spraying cooling gas on the silicon wafer below the second jet head 22 to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, at this time, the silicon wafer is directly above the second graphite placement seat 37. At this time, the first jet head 12 stops working, and the robotic arm 11 is activated to withdraw the first jet head 12 from below the second jet head 22. Then, activate the electric push rod 21 to place the silicon wafer in the inner groove of the second graphite placement seat 37, and then the vacuum pump 25 stops working. S52. Then, the electric push rod 21 drives the second jet head 22 to rise, and both the moving assembly and the driving assembly move to the starting position on the leftmost side. S53. Use the robotic arm to transport the cooled silicon wafer to the next step and repeat the above operations to cool the silicon wafer.

[0025] During the entire cooling process, each component operates orderly under the coordinated control of the controller 6 and the processor 7, ensuring the efficiency and stability of the silicon wafer cooling and transfer processes, and guaranteeing that the quality of the silicon wafer is not damaged.

[0026] Working principle: When in use, first perform the preliminary preparation of the equipment. Install and debug the silicon wafer continuous reaction cooling device of the chemical vapor deposition equipment. The base 1 of this device provides stable support for the entire device, and the workbench 2 on its top surface is used to carry other key components. The connecting plate 3 and the processor 7 are installed on the side wall of the base 1. Two brackets 4 stand on the top surface of the base 1. The graphite placement seat two 37 on the fixing plate 36 on the right side wall of the bracket 4 is used to place the cooled silicon wafer later. The distribution box 5 on the front side wall of the workbench 2 supplies power to the device, and the controller 6 on one side of it controls the operation of each component. The mechanical gripper 8 on the top surface of the connecting plate 3 tightly grips the graphite placement seat one 9 with the high-temperature silicon wafer. The silicon wafer is placed in the groove of the graphite placement seat one 9; When the silicon wafer needs to be cooled, the controller 6 precisely adjusts the robotic arm 11 so that the jet head one 12 at the output end of the robotic arm 11 is directly above the graphite placement seat one 9. Then, turn on the exhaust pump 15. The cooling gas in the storage tank 14 enters the exhaust pump 15 through the connecting pipe one 16, and then is injected into the jet head one 12 through the connecting pipe two 17 and ejected. The ejected cooling gas, on the one hand, fixes the silicon wafer to prevent it from moving; on the other hand, the robotic arm 11 and the mechanical gripper 8 cooperate with each other to rotate the graphite placement seat one 9 by 180 degrees and move it upward, making the silicon wafer suspended above the jet head one 12, thereby cooling one side of the silicon wafer, effectively avoiding the damage that may be caused by directly clamping the high-temperature silicon wafer with a manipulator; When cooling the other side of the silicon wafer, when the laser emitted by the laser rangefinder 23 on the bottom surface of the jet head two 22 is at the exact center of the reflector 13 on the side wall of the jet head one 12, the controller 6 opens the ball valve in the connecting pipe three 24, and the cooling gas then enters the jet head two 22 from the connecting pipe two 17 through the connecting pipe three 24 to cool the other side of the silicon wafer. As the electric push rod 21 is turned on to lower the jet head two 22 and the laser rangefinder 23 detects approaching the reflector 13, the processor 7 quickly processes the data transmitted by the laser rangefinder 23 and converts it into an electrical signal that the exhaust pump 15 can receive, prompting the power of the exhaust pump 15 to gradually increase until it reaches the maximum power, achieving rapid cooling of the silicon wafer. During this process, the cooling gas ejected by the jet head one 12 and the jet head two 22 clamps the silicon wafer without contacting it, ensuring that the silicon wafer is not contaminated and damaged during the cooling process; After the silicon wafer is cooled, the controller 6 closes the ball valve in the connecting pipe three 24 and turns on the vacuum pump 25. The vacuum suction pipe 26 extracts the air in the jet head two 22, creating a negative pressure inside the jet head two 22, and adsorbing the silicon wafer above the jet head one 12 on the bottom surface of the jet head two 22. Then, the driving motor one 27 drives the rotation of the threaded rod one 29 in the moving groove 28 on the top surface of the workbench 2, causing the moving block 30 threadedly connected to the threaded rod one 29 to move, thereby driving the moving plate 10 to move. The driving motor two 35 drives the rotation of the threaded rod two 33 in the sliding groove 32 on the top surface of the bracket 4, causing the slider 34 to move, thus driving the driving plate 18 to move; When the moving assembly reaches the rightmost side, at this time, the driving assembly has not reached the rightmost side yet. At this time, the driving assembly continues to move, and the robotic arm 11 on the moving assembly starts, so that the jet head one 12 is always directly below the jet head two 22, spraying cooling gas on the silicon wafer below the jet head two 22 to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, at this time, the silicon wafer is directly above the graphite placement seat two 37. At this time, the jet head one 12 stops working, and the robotic arm 11 starts to withdraw the jet head one 12 from below the jet head two 22. Then, the electric push rod 21 is started to place the silicon wafer in the inner groove of the graphite placement seat two 37. Then the vacuum pump 25 stops working. After that, the electric push rod 21 drives the jet head two 22 to rise, and both the moving assembly and the driving assembly move to the starting position on the leftmost side. The cooled silicon wafer is transported to the next step by the manipulator and the above operations are repeated to cool the silicon wafer. During the entire cooling process, each component works orderly under the coordinated control of the controller 6 and the processor 7, ensuring the efficiency and stability of the silicon wafer cooling and transfer process and ensuring that the quality of the silicon wafer is not damaged.

[0027] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and all should be covered within the protection scope of the present invention.

Claims

1. A device for continuous reaction cooling of silicon wafers after chemical vapor deposition, characterized in that: include: A base (1), a workbench (2) is fixedly mounted on the top surface of the base (1), a connecting plate (3) and a processor (7) are fixedly mounted on the side wall of the base (1), two brackets (4) are arranged on the top surface of the base (1), a fixing plate (36) is fixedly mounted on the right side wall of the bracket (4), a second graphite placement seat (37) is fixedly mounted at the center of the top surface of the fixing plate (36), a distribution box (5) is fixedly mounted on the front side wall of the workbench (2), a controller (6) is arranged on one side of the distribution box (5), a mechanical clamp (8) is fixedly mounted on the top surface of the connecting plate (3), the end of the mechanical clamp (8) clamps the first graphite placement seat (9) and a groove for placing a high-temperature silicon wafer is arranged on the mechanical clamp; A moving plate (10) is installed on the workbench (2) through a moving assembly, a mechanical arm (11) is fixedly installed on the top surface of the moving plate (10), a nozzle head (12) is fixedly installed on the output end of the mechanical arm (11), a reflecting plate (13) is fixedly installed on the side wall of the nozzle head (12), a storage box (14) and an exhaust pump (15) are fixedly installed on the rear side wall of the workbench (2), a connecting pipe (16) is provided between the storage box (14) and the exhaust pump (15), a connecting pipe (17) is provided between the exhaust pump (15) and the nozzle head (12), and a bracket (4) is provided with a driving plate (18) through a driving assembly, a circular groove (19) is provided on the top surface of the driving plate (18), a concave plate (20) is fixedly provided on the top surface of the driving plate (18), an electric push rod (21) is fixedly provided on the bottom surface of the concave plate (20), a second jet head (22) is fixedly provided on the output shaft of the electric push rod (21), a laser rangefinder (23) is fixedly provided on the bottom surface of the second jet head (22), a connecting pipe (24) connected to the second connecting pipe (17) is provided on one side of the second jet head (22), and a ball valve is provided in the connecting pipe (24).

2. The device for cooling silicon wafers after chemical vapor deposition in a continuous reaction according to claim 1, characterized in that: The mobile components include: A driving motor (27) is fixedly mounted on the right side wall of the workbench (2). A moving groove (28) is provided on the top surface of the workbench (2). A threaded rod (29) is rotatably connected to the inner wall of the moving groove (28). A moving block (30) is threadedly connected to the outer surface of the threaded rod (29). The moving block (30) moves in the moving groove (28) and its top surface is connected to the bottom surface of the moving plate (10). The output shaft of the driving motor (27) is connected to the right side wall of the threaded rod (29).

3. The device for cooling silicon wafers after chemical vapor deposition in a continuous reaction according to claim 1, characterized in that: The drive components include: Two limit plates (31) are fixedly mounted on the right side walls of the two brackets (4) respectively. A slide groove (32) is provided on the top surface of each bracket (4). The inner wall of one of the slide grooves (32) is rotatably connected to a second threaded rod (33). The outer surface of the second threaded rod (33) is threadedly connected to a slider (34). The slider (34) moves in the slide groove (32) and the top surface is connected to the bottom surface of the driving plate (18). A second driving motor (35) is fixedly mounted on the right side wall of one of the limit plates (31). The output shaft of the second driving motor (35) is connected to the right side wall of the second threaded rod (33).

4. A method for continuous reaction cooling of silicon wafers of chemical vapor deposition equipment, applied to the device for continuous reaction cooling of silicon wafers after chemical vapor deposition according to any one of claims 1 to 3, characterized in that: The following steps are involved: S1. Preliminary preparation steps for the equipment: providing a cooling device as described in claims 1-3.

5. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 4, characterized in that: S2. The operation of cooling the silicon wafer is as follows: S21. When cooling is required, the controller (6) adjusts the robot arm (11) so that the nozzle head 1 (12) is directly above the graphite placement seat 1 (9); S22. Before starting the exhaust pump (15), the gas flow and pressure of the nozzle (12) are first precisely adjusted through the controller (6) to ensure that the ejected airflow can form a stable supporting force. When the exhaust pump (15) is turned on, the cooling gas is ejected from the nozzle (12) at a certain speed and pressure to form an airflow field. At this time, the mechanical arm (11) cooperates with the mechanical gripper (8) to rotate the graphite placement seat (9) and the silicon wafer thereon by 180° so that the silicon wafer faces downward. During the rotation process, due to the impact and support of the airflow ejected from the nozzle (12) on the silicon wafer, the silicon wafer is stably pressed inside the groove of the graphite placement seat (9) to prevent it from falling off. Next, the mechanical gripper (8) slowly moves upward while keeping the airflow ejected from the nozzle (12) stable. As the graphite placement seat 1 (9) gradually rises, the silicon wafer begins to float above the nozzle 1 (12) under the support force of the airflow. In order to achieve stable suspension, the controller (6) monitors the position of the silicon wafer and the airflow intensity ejected by the nozzle 1 (12) in real time, and makes fine adjustments as needed. By accurately controlling the size and direction of the airflow, it can ensure that the silicon wafer remains relatively stable in the suspended state to avoid excessive displacement or shaking. When the silicon wafer is in the suspended state, the nozzle 1 (12) continues to eject cooling gas to cool one side of the silicon wafer. Since the support force formed by the airflow matches the gravity of the silicon wafer, the silicon wafer can maintain a stable suspension state, thereby avoiding damage that may be caused by the robot directly clamping the high-temperature silicon wafer. At the same time, the flow of cooling gas also helps to accelerate the cooling process of the silicon wafer.

6. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 5, characterized in that: S3, the steps of cooling the other side of the silicon wafer are as follows: S31, when the laser emitted by the laser rangefinder (23) is at the exact center of the reflector (13), the ball valve in the connecting pipe (24) is opened to allow cooling gas to be injected into the nozzle (22) to cool the other side of the silicon wafer; S32, by turning on the electric push rod (21) to lower the second jet head (22), when the laser rangefinder (23) detects that it is close to the reflective plate (13), the processor (7) processes the data and converts it into an electrical signal of the exhaust pump (15) to increase the power of the exhaust pump (15) to the maximum power to achieve rapid cooling, and the cooling gas ejected by the first jet head (12) and the second jet head (22) will clamp the silicon wafer without contacting the silicon wafer.

7. The method for cooling silicon wafers in a chemical vapor deposition device according to claim 6, characterized in that: S4. While the nozzles 1 (12) and 2 (22) are cooling and clamping the silicon wafer, the gases released by the nozzles 1 (12) and 2 (22) are precisely controlled in pressure and flow to ensure that the two gases form a stable and uniform convection on the surface of the silicon wafer. When the silicon wafer is cooled, the ball valve in the connecting pipe 3 (24) is closed and the vacuum pump (25) is turned on. The vacuum suction pipe (26) extracts the air in the nozzle 2 (22) so that the silicon wafer is adsorbed on the bottom surface of the nozzle 2 (22). Then, the moving component and the driving component move synchronously.

8. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 7, characterized in that: S5. After cooling, the silicon wafer transfer steps are as follows: S51, when the moving component reaches the rightmost side, the driving component has not yet reached the rightmost side. At this time, the driving component continues to move, and the mechanical arm (11) on the moving component is started, so that the nozzle head 1 (12) is always directly below the nozzle head 2 (22), and cooling gas is sprayed on the silicon wafer below the nozzle head 2 (22) to prevent the silicon wafer from falling during the movement. When the driving component moves to the rightmost side, the silicon wafer is directly above the graphite placement seat 2 (37). At this time, the nozzle head 1 (12) stops working, and the mechanical arm (11) is started to withdraw the nozzle head 1 (12) from under the nozzle head 2 (22). After that, the electric push rod (21) is started to place the silicon wafer in the inner groove of the graphite placement seat 2 (37), and then the vacuum pump (25) stops working; S52, the electric push rod (21) then drives the second jet head (22) to rise, and the moving assembly and the driving assembly both move to the leftmost starting position; S53, transporting the cooled silicon wafer to the next step by a robot and repeating the above operation to cool the silicon wafer.

9. The method for cooling silicon wafers in a chemical vapor deposition device according to claim 8, characterized in that: During the entire cooling process, all components work in an orderly manner under the coordinated control of the controller (6) and the processor (7), ensuring the efficiency and stability of the silicon wafer cooling and transfer process, and ensuring that the quality of the silicon wafer is not damaged.

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