Method and device for measuring current distribution of non-intrusive crimping type IGBT (Insulated Gate Bipolar Translator)

Abstract

The embodiment of the invention provides a non-intrusive crimping type IGBT current distribution measurement method and device. The method comprises the steps of collecting magnetic field intensity generated by a plurality of to-be-detected parallel crimping type IGBTs based on a pre-constructed measurement array; simulating the magnetic field intensity detected by each AMR sensor based on the vacuum magnetic conductivity, the IGBT chip current and the distance from the IGBT chip to the AMR sensor; based on the magnetic field intensity detected by each AMR sensor, a current magnetic induction intensity calculation matrix is constructed according to the magnetic induction intensity calculation coefficient of each AMR sensor and the current of each IGBT chip; solving the IGBT chip current in the magnetic induction intensity calculation matrix to realize IGBT current distribution measurement; according to the invention, the internal current distribution of the crimping type IGBT can be detected in real time in a non-intrusive manner without damaging the packaging structure of the crimping type IGBT.

Description

Technical Field

[0001] This application relates to the technical field of electronic device testing and measurement, and particularly to a non-invasive crimp-type IGBT current distribution measurement method and device. Background Art

[0002] Crimp-type IGBT devices have attracted much attention due to their wide application in high-voltage and high-power power electronic equipment, and play an important role in fields such as rail transit, renewable energy, and industrial frequency conversion equipment. As a high-performance power switching device, a crimp-type IGBT needs to withstand high voltage and large current during operation, and the current uniformity of its internal parallel chips is crucial for the robustness and reliability of the device. However, uneven current distribution inside the device may cause local chips to bear excessive current loads, leading to electrical breakdown or thermal breakdown, which becomes the main factor for device failure.

[0003] To solve this problem, it is of great significance to study the current distribution measurement method of the internal parallel chips of crimp-type IGBTs, which can not only provide references for chip screening and optimized package design, but also improve the reliability of the device.

[0004] However, since the internal chips of crimp-type IGBTs are usually hermetically packaged and closely distributed, the complex electromagnetic field environment generated by them causes great interference to the measurement system, making it difficult for existing technologies to accurately measure the current distribution. In addition, traditional invasive measurement methods, such as integrating a PCB Rogowski coil inside the device, although having high measurement accuracy, will damage the original package structure of the device, change its internal parameters, and affect the normal operation of the device. Summary of the Invention

[0005] Aiming at the problems in the prior art, this application provides a non-invasive crimp-type IGBT current distribution measurement method and device, which can detect the internal current distribution of a crimp-type IGBT in a non-invasive manner without damaging the package structure of the crimp-type IGBT in real time.

[0006] To solve at least one of the above problems, this application provides the following technical solutions:

[0007] According to the first aspect of the embodiments of this application, this application provides a non-invasive crimp-type IGBT current distribution measurement method, including:

[0008] Collect the magnetic field intensity generated by multiple parallel press-pack IGBTs to be detected based on a pre-built measurement array. Among them, the multiple parallel press-pack IGBT chips to be detected are arranged on the convex platforms inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors evenly placed along a circle. The magnetic field direction formed by the multiple parallel press-pack IGBT chips remains consistent along the clockwise or counterclockwise direction of the circle. The convex platforms are evenly arranged along the inner concentric circle of the circle.

[0009] Simulate the magnetic field intensity detected by each AMR sensor based on the vacuum magnetic permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor.

[0010] Construct the current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and each IGBT chip current. Among them, the magnetic induction intensity is determined according to the vacuum magnetic permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0011] Solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize the measurement of the IGBT current distribution.

[0012] According to any implementation manner of the present application, the step of simulating the magnetic field intensity detected by each AMR sensor based on the vacuum magnetic permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor includes:

[0013] Simulate the magnetic field intensity detected by each AMR sensor based on the following formula:

[0014]

[0015] Among them, B is the magnetic field intensity detected by each AMR sensor;

[0016] μ0 is the vacuum magnetic permeability;

[0017] I is the IGBT chip current;

[0018] r is the distance from the IGBT chip to the AMR sensor.

[0019] According to any implementation manner of the present application, the step of constructing the current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and each IGBT chip current includes:

[0020] Construct the current magnetic induction intensity calculation matrix based on the following formula:

[0021]

[0022] Among them, B1 to B m is the magnetic induction intensity of each of the AMR sensors;

[0023] I1 to I n is the current of each of the IGBT chips;

[0024] M 11 to M mn is the magnetic induction intensity calculation coefficient of each of the AMR sensors;

[0025]

[0026] Among them, r mn is the distance from each IGBT chip to each AMR sensor;

[0027] θ mn is the angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0028] According to any embodiment of the present application, solving for the IGBT chip current in the magnetic induction intensity calculation matrix to implement IGBT current distribution measurement includes:

[0029] Based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, initializing the IGBT chip current distribution to zero, and setting an iteration step size parameter to ensure that the result converges step by step;

[0030] During the iteration process, calculating the residual between the currently estimated IGBT chip current distribution and the actual measurement data, and correcting the residual according to the iteration step size parameter to dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirement.

[0031] According to the second aspect of the embodiments of the present application, the present application provides a non-invasive crimped IGBT current distribution measurement device, including:

[0032] A measurement array arrangement module, configured to: collect the magnetic field intensity generated by a plurality of parallel crimped IGBTs to be detected based on a pre-constructed measurement array, wherein the plurality of parallel crimped IGBT chips to be detected are arranged on a convex platform inside the pre-constructed measurement array, the measurement array includes a plurality of AMR magnetic sensors evenly arranged along a circle, the magnetic field directions formed by the plurality of parallel crimped IGBT chips are consistent along the clockwise or counterclockwise direction of the circle, and the convex platforms are evenly arranged along the inner concentric circle of the circle;

[0033] A magnetic field intensity simulation module, configured to: simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor;

[0034] A magnetic induction intensity calculation module, configured to: construct a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip, wherein the magnetic induction intensity is determined according to the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction;

[0035] A current distribution solving module, configured to: solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize the measurement of the IGBT current distribution.

[0036] According to any embodiment of the present application, the magnetic field intensity simulation module is specifically configured to:

[0037] Simulate the magnetic field intensity detected by each AMR sensor based on the following formula:

[0038]

[0039] Wherein, B is the magnetic field intensity detected by each AMR sensor;

[0040] μ0 is the vacuum permeability;

[0041] I is the IGBT chip current;

[0042] r is the distance from the IGBT chip to the AMR sensor.

[0043] According to any embodiment of the present application, the magnetic induction intensity calculation module is specifically configured to:

[0044] Construct a current magnetic induction intensity calculation matrix based on the following formula:

[0045]

[0046] Wherein, B1 to B m is the magnetic induction intensity of each AMR sensor;

[0047] I1 to I n is the current of each IGBT chip;

[0048] M 11 to M mn is the magnetic induction intensity calculation coefficient of each AMR sensor;

[0049]

[0050] where r mn is the distance from each IGBT chip to each AMR sensor;

[0051] θ mn is the angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0052] According to any embodiment of the present application, the current distribution solving module includes:

[0053] An initialization unit for: based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, initializing the IGBT chip current distribution to zero, and setting an iteration step size parameter to ensure that the result converges step by step;

[0054] An iterative update unit for: during the iteration process, calculating the residual between the currently estimated IGBT chip current distribution and the actual measurement data, and correcting the residual according to the iteration step size parameter, dynamically updating the IGBT chip current distribution until the residual meets the preset accuracy requirement.

[0055] According to the third aspect of the embodiments of the present application, the present application provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, the steps of the non-invasive crimp-type IGBT current distribution measurement method are implemented.

[0056] According to the fourth aspect of the embodiments of the present application, the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the non-invasive crimp-type IGBT current distribution measurement method are implemented.

[0057] According to the fifth aspect of the embodiments of the present application, the present application provides a computer program product, including a computer program / instructions. When the computer program / instructions are executed by a processor, the steps of the non-invasive crimp-type IGBT current distribution measurement method are implemented.

[0058] As can be seen from the above technical solutions, the present application provides a non-invasive crimped IGBT current distribution measurement method and device. By collecting the magnetic field intensities generated by multiple parallel-connected crimped IGBTs to be detected based on a pre-constructed measurement array, wherein the multiple parallel-connected crimped IGBT chips to be detected are arranged on the protrusions inside the pre-constructed measurement array, the measurement array includes multiple AMR magnetic sensors uniformly arranged along a circle, the magnetic field directions formed by the multiple parallel-connected crimped IGBT chips are consistent along the clockwise or counterclockwise direction of the circle, and the protrusions are uniformly arranged along the inner concentric circle of the circle; simulating the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor; constructing a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and each IGBT chip current, wherein the magnetic induction intensity is determined according to the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the included angle between the vertical direction and the distance direction; solving the IGBT chip current in the magnetic induction intensity calculation matrix to achieve the measurement of the IGBT current distribution. It can detect the internal current distribution of the crimped IGBT in a non-invasive manner without damaging the packaging structure of the crimped IGBT in real time. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0060] Figure 1 It is one of the schematic flowcharts of the non-invasive crimped IGBT current distribution measurement method in the embodiments of the present application;

[0061] Figure 2 It is a schematic diagram of the placement position of the measurement device of the non-invasive crimped IGBT current distribution measurement method in the embodiments of the present application.

[0062] Figure 3 It is the second schematic flowchart of the non-invasive crimped IGBT current distribution measurement method in the embodiments of the present application;

[0063] Figure 4 It is one of the structural diagrams of the non-invasive crimped IGBT current distribution measurement device in the embodiments of the present application;

[0064] Figure 5This is the second structural diagram of the non-invasive crimp-type IGBT current distribution measurement device in the embodiments of the present application;

[0065] Figure 6 This is the structural schematic diagram of the electronic device in the embodiments of the present application.

[0066] [Symbol description]

[0067] 1A to 6A: AMR magnetic sensors;

[0068] 1B to 5B: bosses. Specific implementation manners

[0069] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0070] In the technical solutions of the present application, the acquisition, storage, use, processing, etc. of data all comply with the relevant regulations of national laws and regulations.

[0071] Considering the problems of traditional invasive measurement methods, such as integrating a PCB Rogowski coil inside a device, although having high measurement accuracy, it will damage the original packaging structure of the device and change its internal parameters. The present application provides a non-invasive crimp-type IGBT current distribution measurement method and device. By constructing an AMR magnetic sensor array, the magnetic field distribution around the crimp-type IGBT is detected in real time, and then through the LANDWEBER iterative algorithm, the current distribution inside the crimp-type IGBT is inversely deduced, without damaging the packaging structure of the crimp-type IGBT, and the internal current distribution of the crimp-type IGBT is detected in real time in a non-invasive manner.

[0072] In order to be able to detect the internal current distribution of the crimp-type IGBT in real time in a non-invasive manner without damaging the packaging structure of the crimp-type IGBT, the present application provides an embodiment of a non-invasive crimp-type IGBT current distribution measurement method. Refer to Figure 1 , the non-invasive crimp-type IGBT current distribution measurement method specifically includes the following content:

[0073] Step S101: Acquire the magnetic field intensities generated by multiple parallel press-pack IGBTs to be detected based on a pre-built measurement array. Among them, the multiple parallel press-pack IGBT chips to be detected are arranged on the protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors evenly placed along a circle. The magnetic field directions formed by the multiple parallel press-pack IGBT chips are consistent along the clockwise or counterclockwise direction of the circle, and the protrusions are evenly arranged along the inner concentric circle of the circle.

[0074] First, arrange multiple parallel press-pack IGBT chips to be detected on the protrusions of the measurement array. The measurement array consists of multiple AMR magnetic sensors (anisotropic magnetoresistive sensors), and these sensors are evenly distributed on a circular structure and arranged around the protrusions. The protrusions are designed to fix and position the IGBT chips so that each chip has a clear geometric relationship at the center of the array. To ensure the accuracy of the measurement, when arranging the chips, it is necessary to keep the magnetic field directions (determined by the current flow) generated by them consistent in the circular arrangement, that is, the magnetic field directions are uniformly clockwise or counterclockwise, to avoid interference and measurement errors caused by inconsistent magnetic field directions.

[0075] Exemplarily, as Figure 2 shown, 6 AMR magnetic sensors (1A to 6A) are arranged on the measurement array, and each sensor is evenly spaced 60° on the circle, while the IGBT chip is located on the protrusion at the center of the array. The tangential sensitive direction of each sensor is designed to be consistent with the magnetic field direction generated by the chip, so as to ensure that the sensor can sense the magnetic field component of the chip to the greatest extent.

[0076] Among them, referring to Figure 2 , there are 5 protrusions (1B to 5B) in the middle area, one protrusion is at the center of the circle, and the other 4 are arranged every 90°. The IGBT chips are located on the protrusions. In the schematic diagram, the current direction is perpendicular to the plane and inward. 6 AMR magnetic sensors are evenly placed around the protrusions to form a measurement array. AMR is only sensitive to the tangential direction of the circle in the figure, and outputs an analog voltage through the magnetic field intensity.

[0077] Step S102: Simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor.

[0078] Next, simulate the magnetic field intensity that each AMR sensor can detect according to the physical model. Specifically, each current path of the chip will generate a magnetic field in the surrounding space. According to the Biot-Savart law, the magnetic field intensity is proportional to the current value and inversely proportional to the distance between the sensor and the chip. Through this process, accurate simulation values can be provided for the subsequent construction of the magnetic induction intensity matrix.

[0079] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined according to the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0080] Based on the magnetic field intensity detected by the sensor, construct the current magnetic induction intensity calculation matrix according to the magnetic induction intensity calculation coefficient of each AMR sensor and the current value of each IGBT chip. The magnetic induction intensity calculation coefficient is determined by the following factors:

[0081] Vacuum permeability: used to describe the transmission characteristics of the magnetic field in vacuum.

[0082] Distance: the geometric distance between the sensor and the IGBT chip.

[0083] Angle: the angle between the sensitive direction of the sensor and the direction of the magnetic field generated by the chip current.

[0084] For example, if the measurement array contains 5 sensors and 3 chips, a 5x3 magnetic induction intensity matrix can be obtained, where each matrix element corresponds to the magnetic field contribution of a certain sensor sensing the current of a certain chip.

[0085] By constructing this matrix, the chip current distribution can be associated with the magnetic field intensity detected by the sensor, providing a mathematical model for subsequent solution.

[0086] Step S104: Solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize the measurement of the IGBT current distribution.

[0087] Finally, use the Landweber iteration method to solve the constructed magnetic induction intensity matrix. The Landweber iteration is a numerical algorithm suitable for inferring the current distribution of IGBT chips from the magnetic field data measured by sensors. Its core idea is to gradually optimize the estimated value of the chip current to make it as close as possible to the true value.

[0088] Specifically, first set an initial value. For example, set the initial estimated value of all chip currents to zero. In each iteration, the algorithm calculates the residual according to the current estimated value, that is, the difference between the sensor measurement value and the calculated value. Then, the chip current estimated value is corrected according to the residual, gradually approaching the actual current distribution.

[0089] Exemplarily, in this application, through the Landweber iteration method, the current distribution of each IGBT chip can be accurately obtained, providing an important basis for evaluating the operating state of the chip.

[0090] As can be seen from the above description, the non-invasive crimp-type IGBT current distribution measurement method provided by the embodiments of the present application can construct an AMR magnetic sensor array to detect the magnetic field distribution around the crimp-type IGBT in real time, and then use the LANDWEBER iterative algorithm to inversely deduce the current distribution inside the crimp-type IGBT without damaging the packaging structure of the crimp-type IGBT, and detect the internal current distribution of the crimp-type IGBT in a non-invasive manner in real time.

[0091] In an alternative embodiment, simulating the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor includes:

[0092] Simulating the magnetic field intensity detected by each AMR sensor based on the following formula:

[0093]

[0094] where B is the magnetic field intensity detected by each AMR sensor;

[0095] μ0 is the vacuum permeability;

[0096] I is the IGBT chip current;

[0097] r is the distance from the IGBT chip to the AMR sensor.

[0098] In an alternative embodiment, constructing the current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the coefficient of the magnetic induction intensity of each AMR sensor, and the current of each IGBT chip includes:

[0099] Constructing the current magnetic induction intensity calculation matrix based on the following formula:

[0100]

[0101] where B1 to B m is the magnetic induction intensity of each AMR sensor;

[0102] I1 to I n is the current of each IGBT chip;

[0103] M 11 to M mn is the coefficient of the magnetic induction intensity of each AMR sensor;

[0104]

[0105] where r mnis the distance from each IGBT chip to each AMR sensor;

[0106] θ mn is the angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0107] Exemplarily, referring to Figure 2 , in the case of setting 6 AMR sensors, the array output matrix is:

[0108]

[0109] where

[0110] Through the above steps, a magnetic induction intensity calculation matrix B = MI is constructed. It can be seen from this that the sensor output is linearly related to the current flowing through the conductor.

[0111] However, M may contain interference resulting in irreversibility. In order to obtain the value of I more accurately, the LANDWEBER iterative algorithm is used for calculation in this application.

[0112] LANDWEBER iteration is an iterative method for solving linear inverse problems, mainly used to solve the unknown vector x in the linear equation Ax = b. The basic formula of LANDWEBER iteration is as follows:

[0113]

[0114] where x (k) is the approximate solution of the k-th iteration, α is the step size (or called the relaxation parameter), and A T is the transpose of matrix A.

[0115] Its iterative process starts from an initial guess x(0), which can usually be chosen as the zero vector. In each iteration, the residual r between the current approximate solution x(k) and the true solution is calculated (k) = b - Ax (k) . The approximate solution x(k) is updated by adding the product of the residual r (k) and the transpose of matrix A, multiplied by the step size α.

[0116] Among them, the step size α is a key parameter, which affects the convergence speed and stability of the iteration. If α is too large, the iteration may diverge; if α is too small, the convergence speed will be very slow.

[0117] Usually, α is chosen to be less than the value, where ||A|| is the norm of matrix A. The convergence of the LANDWEBER iteration depends on the properties of matrix A and the choice of the step size α. If A is a matrix with full column rank and α is appropriately chosen, then the LANDWEBER iteration will converge to the minimum norm solution of the system of equations Ax = b.

[0118] In an embodiment of the non-invasive crimped IGBT current distribution measurement method of the present application, refer to Figure 3 wherein, solving the IGBT chip current in the magnetic induction intensity calculation matrix to realize the measurement of the IGBT current distribution includes:

[0119] Step S104A: Based on the magnetic induction intensity calculation matrix, initialize the IGBT chip current distribution to zero by using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, and set the iteration step size parameter to ensure that the result converges step by step.

[0120] In the initial stage, based on the magnetic induction intensity calculation matrix, first use the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix as input parameters to provide a basis for the calculation model. Then, initialize the IGBT chip current distribution to zero as the starting point for iterative solution. At this time, it is assumed that all chip currents are zero for continuous optimization through iteration. To ensure that the result converges step by step and avoid algorithm divergence, an appropriate iteration step size parameter needs to be set. Usually, the size of the step size parameter is set to a value less than the reciprocal of the norm of the magnetic induction intensity matrix to ensure calculation stability.

[0121] Step S104B: During the iteration process, calculate the residual between the currently estimated IGBT chip current distribution and the actual measurement data, and correct the residual according to the iteration step size parameter to dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirement.

[0122] During the iteration process, the estimated value of the current chip current distribution is dynamically corrected by calculating the residual between the estimated value and the sensor measurement data. The residual reflects the difference between the estimated magnetic field intensity and the actual measurement value, and is the basis for judging whether the current estimate is close to the true solution. According to the Landweber algorithm, the residual is corrected by using the transpose of the magnetic induction intensity matrix and the step size parameter, and the chip current distribution is gradually updated. The result of each update is used as the input value for the next iteration, thereby realizing cyclic optimization. This iteration process continuously reduces the difference between the sensor measurement data and the estimated data, and gradually approaches the true chip current distribution.

[0123] When the residual is less than the preset accuracy requirement or the maximum number of iterations is reached, the iteration stops. The finally output chip current distribution is the solution result, which can accurately reflect the actual operating state of each IGBT chip. Through this process, the Landweber iteration method not only achieves efficient solution of complex systems, but also overcomes the influence of noise and data interference, has high accuracy and stability, and provides a reliable basis for IGBT chip performance evaluation and optimization.

[0124] In summary, through non-invasive design, the present application only needs to arrange a measurement array composed of AMR magnetic sensors to realize the detection of the internal current distribution of the press-pack IGBT, without damaging the package structure of the device, thus avoiding the potential impact of traditional invasive detection methods on the device performance and internal parameters.

[0125] Secondly, the relationship between the output signal of the magnetic sensor and the internal current of the press-pack IGBT is clear and definite. Through algorithm processing based on the sensor output, the internal current distribution of the press-pack IGBT can be directly and quickly deduced, and it has high measurement accuracy.

[0126] The technical solution of the present application can relatively accurately obtain the working state of the press-pack IGBT, provides a reliable basis for the evaluation of the operating state of the device, and at the same time has the characteristics of non-invasiveness, high precision and easy implementation, providing important technical support for the research and development and application of the press-pack IGBT.

[0127] In order to be able to detect the internal current distribution of the press-pack IGBT in a non-invasive manner without damaging the package structure of the press-pack IGBT, the present application provides an embodiment of a non-invasive press-pack IGBT current distribution measurement device for implementing all or part of the content of the non-invasive press-pack IGBT current distribution measurement method. See Figure 4 The non-invasive press-pack IGBT current distribution measurement device specifically includes the following content:

[0128] A measurement array arrangement module 1101, configured to: collect the magnetic field intensity generated by a plurality of parallel press-pack IGBTs to be detected based on a pre-constructed measurement array, wherein the plurality of parallel press-pack IGBT chips to be detected are arranged on a convex platform inside the pre-constructed measurement array, the measurement array includes a plurality of AMR magnetic sensors uniformly placed along a circle, the magnetic field direction formed by the plurality of parallel press-pack IGBT chips is consistent along the clockwise or counterclockwise direction of the circle, and the convex platforms are uniformly arranged along the inner concentric circle of the circle;

[0129] A magnetic field intensity simulation module 1102, configured to: simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor;

[0130] The magnetic induction intensity calculation module 1103 is configured to: construct a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip, wherein the magnetic induction intensity is determined according to the permeability of vacuum, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction;

[0131] The current distribution solving module 1104 is configured to: solve the IGBT chip current in the magnetic induction intensity calculation matrix to implement the measurement of the IGBT current distribution.

[0132] According to any implementation manner of the present application, the magnetic field intensity simulation module is specifically configured to:

[0133] Simulate the magnetic field intensity detected by each AMR sensor based on the following formula:

[0134]

[0135] where B is the magnetic field intensity detected by each AMR sensor;

[0136] μ0 is the permeability of vacuum;

[0137] I is the current of the IGBT chip;

[0138] r is the distance from the IGBT chip to the AMR sensor.

[0139] According to any implementation manner of the present application, the magnetic induction intensity calculation module is specifically configured to:

[0140] Construct a current magnetic induction intensity calculation matrix based on the following formula:

[0141]

[0142] where B1 to B m is the magnetic induction intensity of each AMR sensor;

[0143] I1 to I n is the current of each IGBT chip;

[0144] M 11 to M mn is the magnetic induction intensity calculation coefficient of each AMR sensor;

[0145]

[0146] where r mnis the distance from each IGBT chip to each AMR sensor;

[0147] θ mn is the angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0148] According to any embodiment of the present application, referring to Figure 5 , the current distribution solving module includes:

[0149] An initialization unit 1104A, configured to: based on the magnetic induction intensity calculation matrix, use the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix to initialize the IGBT chip current distribution to zero, and set an iteration step parameter to ensure that the result converges step by step;

[0150] An iterative update unit 1104B, configured to: during the iteration process, calculate the residual between the currently estimated IGBT chip current distribution and the actually measured data, and correct the residual according to the iteration step parameter, and dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirement.

[0151] As can be seen from the above description, the non-invasive crimped IGBT current distribution measuring device provided by the embodiments of the present application can construct an AMR magnetic sensor array to detect the magnetic field distribution around the crimped IGBT in real time, and then use the LANDWEBER iterative algorithm to inversely deduce the current distribution inside the crimped IGBT without damaging the packaging structure of the crimped IGBT, and detect the internal current distribution of the crimped IGBT in a non-invasive manner in real time.

[0152] From the hardware level, in order to be able to detect the internal current distribution of the crimped IGBT in a non-invasive manner without damaging the packaging structure of the crimped IGBT, the present application provides an embodiment of an electronic device for implementing all or part of the content in the non-invasive crimped IGBT current distribution measuring method. The electronic device specifically includes the following content:

[0153] A processor, a memory, a communications interface, and a bus; wherein, the processor, the memory, and the communications interface complete communication with each other through the bus; the communications interface is used to implement information transmission between the non-intrusive press-fit type IGBT current distribution measurement device and related devices such as a core business system, a user terminal, and a related database, etc.; the logic controller can be a desktop computer, a tablet computer, a mobile terminal, etc., and this embodiment is not limited thereto. In this embodiment, the logic controller can be implemented with reference to the embodiments of the non-intrusive press-fit type IGBT current distribution measurement method and the embodiments of the non-intrusive press-fit type IGBT current distribution measurement device, and the content is incorporated herein, and the repeated parts will not be described again.

[0154] It can be understood that the user terminal can include a smart phone, a tablet electronic device, a network set-top box, a portable computer, a desktop computer, a personal digital assistant (PDA), a vehicle-mounted device, a smart wearable device, etc. Among them, the smart wearable device can include smart glasses, a smart watch, a smart bracelet, etc.

[0155] In practical applications, part of the non-intrusive press-fit type IGBT current distribution measurement method can be executed on the electronic device side as described above, or all operations can be completed in the client device. Specifically, it can be selected according to the processing capacity of the client device and the limitations of the user usage scenario, etc. This application does not make any limitations in this regard. If all operations are completed in the client device, the client device may further include a processor.

[0156] The above-mentioned client device can have a communication module (i.e., a communication unit), and can be communicatively connected to a remote server to achieve data transmission with the server. The server can include a server on the task scheduling center side, and in other implementation scenarios, it can also include a server of an intermediate platform, such as a server of a third-party server platform communicatively linked to the task scheduling center server. The server can include a single computer device, or can include a server cluster composed of multiple servers, or a server structure of a distributed device.

[0157] Figure 6 This is a schematic block diagram of the system composition of the electronic device 9600 according to an embodiment of the present application. As Figure 6 shown, the electronic device 9600 can include a central processing unit 9100 and a memory 9140; the memory 9140 is coupled to the central processing unit 9100. It should be noted that this Figure 6 is exemplary; other types of structures can also be used to supplement or replace this structure to achieve telecommunications functions or other functions.

[0158] In one embodiment, the function of the non-invasive crimp-type IGBT current distribution measurement method can be integrated into the central processing unit 9100. Among them, the central processing unit 9100 can be configured to perform the following controls:

[0159] Step S101: Collect the magnetic field intensities generated by multiple parallel-connected crimp-type IGBTs to be detected based on a pre-built measurement array. Among them, the multiple parallel-connected crimp-type IGBT chips to be detected are arranged on the protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors evenly placed along a circle. The magnetic field directions formed by the multiple parallel-connected crimp-type IGBT chips are consistent along the clockwise or counterclockwise direction of the circle. The protrusions are evenly arranged along the inner concentric circle of the circle;

[0160] Step S102: Simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor;

[0161] Step S103: Construct a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. Among them, the magnetic induction intensity is determined according to the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction;

[0162] Step S104: Solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize the measurement of the IGBT current distribution.

[0163] As can be seen from the above description, the electronic device provided by the embodiment of the present application constructs an AMR magnetic sensor array to detect the magnetic field distribution around the crimp-type IGBT in real time, and then uses the LANDWEBER iterative algorithm to inversely deduce the current distribution inside the crimp-type IGBT without damaging the packaging structure of the crimp-type IGBT, and detects the internal current distribution of the crimp-type IGBT in a non-invasive manner in real time.

[0164] In another embodiment, the non-invasive crimp-type IGBT current distribution measurement device can be separately configured from the central processing unit 9100. For example, the non-invasive crimp-type IGBT current distribution measurement device can be configured as a chip connected to the central processing unit 9100, and the function of the non-invasive crimp-type IGBT current distribution measurement method is realized through the control of the central processing unit.

[0165] Such as Figure 6As shown, the electronic device 9600 may further include: a communication module 9110, an input unit 9120, an audio processor 9130, a display 9160, and a power supply 9170. It should be noted that the electronic device 9600 does not necessarily have to include Figure 6 all the components shown in Figure 6 ; in addition, the electronic device 9600 may further include

[0166] As Figure 6 shown, the central processing unit 9100, sometimes also referred to as a controller or operation control, may include a microprocessor or other processor devices and / or logic devices. The central processing unit 9100 receives inputs and controls the operations of the various components of the electronic device 9600.

[0167] Among them, the memory 9140, for example, may be one or more of a buffer, a flash memory, a hard drive, a removable medium, a volatile memory, a non-volatile memory, or other suitable devices. It can store the above information related to failures, and can also store programs for executing relevant information. And the central processing unit 9100 can execute the programs stored in the memory 9140 to achieve information storage or processing, etc.

[0168] The input unit 9120 provides inputs to the central processing unit 9100. The input unit 9120 is, for example, a key or a touch input device. The power supply 9170 is used to supply power to the electronic device 9600. The display 9160 is used to display display objects such as images and texts. The display may be, for example, an LCD display, but is not limited thereto.

[0169] The memory 9140 may be a solid-state memory. For example, it may be a read-only memory (ROM), a random access memory (RAM), a SIM card, etc. It may also be such a memory that stores information even when powered off, can be selectively erased and has more data. Examples of such a memory are sometimes referred to as EPROMs, etc. The memory 9140 may also be some other type of device. The memory 9140 includes a buffer memory 9141 (sometimes referred to as a buffer). The memory 9140 may include an application / function storage unit 9142, which is used to store application programs and function programs or the processes for operating the electronic device 9600 through the central processing unit 9100.

[0170] The memory 9140 may further include a data storage unit 9143 for storing data such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 9144 of the memory 9140 may include various drivers of the electronic device for communication functions and / or for performing other functions of the electronic device (such as a messaging application, an address book application, etc.).

[0171] The communication module 9110 is a transmitter / receiver that transmits and receives signals via the antenna 9111. The communication module (transmitter / receiver) 9110 is coupled to the central processor 9100 to provide input signals and receive output signals, which may be the same as in the case of a conventional mobile communication terminal.

[0172] Based on different communication technologies, multiple communication modules 9110 may be provided in the same electronic device, such as a cellular network module, a Bluetooth module, and / or a wireless local area network module, etc. The communication module (transmitter / receiver) 9110 is also coupled to the speaker 9131 and the microphone 9132 via the audio processor 9130 to provide an audio output via the speaker 9131 and receive an audio input from the microphone 9132, thereby implementing normal telecommunication functions. The audio processor 9130 may include any suitable buffers, decoders, amplifiers, etc. Additionally, the audio processor 9130 is also coupled to the central processor 9100, so that recording can be performed on the local machine through the microphone 9132, and the sound stored on the local machine can be played through the speaker 9131.

[0173] Embodiments of the present application also provide a computer-readable storage medium capable of implementing all steps of the non-invasive crimp-type IGBT current distribution measurement method with the execution subject being a server or a client in the above embodiments. A computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, all steps of the non-invasive crimp-type IGBT current distribution measurement method with the execution subject being a server or a client in the above embodiments are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0174] Step S101: Acquire the magnetic field intensities generated by a plurality of parallel-connected crimp-type IGBTs to be detected based on a pre-constructed measurement array. Among them, the plurality of parallel-connected crimp-type IGBT chips to be detected are disposed on the protrusions inside the pre-constructed measurement array. The measurement array includes a plurality of AMR magnetic sensors uniformly arranged along a circle. The magnetic field directions formed by the plurality of parallel-connected crimp-type IGBT chips are kept consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged along the inner concentric circle of the circle;

[0175] Step S102: Simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor;

[0176] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the calculation coefficient of the magnetic induction intensity of each AMR sensor, and the current of each IGBT chip, where the magnetic induction intensity is determined according to the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction;

[0177] Step S104: Solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize the measurement of the IGBT current distribution.

[0178] As can be seen from the above description, the computer-readable storage medium provided by the embodiments of the present application constructs an AMR magnetic sensor array to detect the magnetic field distribution around the press-fit IGBT in real time, and then uses the LANDWEBER iterative algorithm to inversely deduce the current distribution inside the press-fit IGBT without damaging the packaging structure of the press-fit IGBT, and realizes the real-time detection of the internal current distribution of the press-fit IGBT in a non-invasive manner.

[0179] The embodiments of the present application also provide a computer program product that can implement all the steps in the non-invasive press-fit IGBT current distribution measurement method with the execution subject being a server or a client in the above embodiments. When the computer program / instructions are executed by a processor, the steps of the non-invasive press-fit IGBT current distribution measurement method are implemented. For example, the computer program / instructions implement the following steps:

[0180] Step S101: Collect the magnetic field intensity generated by multiple parallel press-fit IGBTs to be detected based on a pre-constructed measurement array, where the multiple parallel press-fit IGBT chips to be detected are arranged on the protrusions inside the pre-constructed measurement array. The measurement array includes multiple AMR magnetic sensors evenly placed along a circle. The magnetic field directions formed by the multiple parallel press-fit IGBT chips are consistent along the clockwise or counterclockwise direction of the circle, and the protrusions are evenly arranged along the inner concentric circle of the circle;

[0181] Step S102: Simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor;

[0182] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the calculation coefficient of the magnetic induction intensity of each AMR sensor, and the current of each IGBT chip, where the magnetic induction intensity is determined according to the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction;

[0183] Step S104: Solve the IGBT chip current in the magnetic induction intensity calculation matrix to achieve IGBT current distribution measurement.

[0184] As can be seen from the above description, the computer program product provided by the embodiments of the present application constructs an AMR magnetic sensor array to detect the magnetic field distribution around the press-fit IGBT in real time, and then uses the LANDWEBER iterative algorithm to inversely deduce the current distribution inside the press-fit IGBT, without damaging the packaging structure of the press-fit IGBT, and non-invasively detects the internal current distribution of the press-fit IGBT in real time.

[0185] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a device, or a computer program product. Therefore, the present application can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0186] The present application is described with reference to the flowcharts and / or block diagrams of methods, devices (apparatus), and computer program products according to the embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram can be implemented by computer program instructions, and the combination of the flows and / or blocks in the flowchart and / or block diagram can also be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate a device for implementing the functions specified in Figure 1 one or more processes and / or blocks Figure 1 one or more blocks.

[0187] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including an instruction device, and the instruction device implements the functions specified in Figure 1 one or more processes and / or blocks Figure 1The functions specified in one or more boxes.

[0188] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process. Thus, the instructions executed on the computer or other programmable device provide for implementing the steps of the functions specified in Figure 1 one or more processes and / or boxes Figure 1 the functions specified in one or more boxes.

[0189] In this application, specific embodiments are used to elaborate on the principles and implementation manners of this application. The descriptions of the above embodiments are only used to help understand the method and its core idea of this application. At the same time, for those of ordinary skill in the art, according to the idea of this application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation on this application.

Claims

1. A non-invasive crimp-type IGBT current distribution measurement method, characterized in that: The method comprises: The magnetic field strength generated by the plurality of parallel-connected crimped IGBTs to be detected is collected based on a pre-constructed measurement array, wherein the plurality of parallel-connected crimped IGBT chips to be detected are arranged on a boss inside the pre-constructed measurement array, the measurement array comprises a plurality of AMR magnetic sensors evenly placed along a circle, the direction of the magnetic field formed by the plurality of parallel-connected crimped IGBT chips is consistent along the clockwise or counterclockwise direction of the circle, and the boss is evenly arranged along the inner concentric circle of the circle; The magnetic field strength detected by each AMR sensor is simulated based on the vacuum magnetic permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor; Constructing a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor and the current of each IGBT chip, wherein the magnetic induction intensity is determined according to the vacuum magnetic permeability, the distance from each IGBT chip to each AMR sensor and the angle between the vertical direction and the distance direction; The IGBT chip current in the magnetic induction intensity calculation matrix is ​​solved to achieve IGBT current distribution measurement.

2. The non-invasive crimp-type IGBT current distribution measurement method according to claim 1, characterized in that: The method of simulating the magnetic field strength detected by each AMR sensor based on the vacuum magnetic permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor includes: The magnetic field strength detected by each AMR sensor is simulated based on the following formula: Wherein, B is the magnetic field strength detected by each AMR sensor; μ0 is the vacuum magnetic permeability; I is the IGBT chip current; r is the distance from the IGBT chip to the AMR sensor.

3. The non-invasive crimp-type IGBT current distribution measurement method according to claim 1, characterized in that: The method of constructing a current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor and the magnetic induction intensity calculation coefficient of each AMR sensor and the current of each IGBT chip includes: The current magnetic induction intensity calculation matrix is ​​constructed based on the following formula: Among them, B1 to B m is the magnetic induction intensity of each AMR sensor; I1 to I n is the current of each IGBT chip; M 11 To M mn Calculating a magnetic induction intensity coefficient for each of the AMR sensors; Among them, r mn is the distance from each IGBT chip to each AMR sensor; θ mn It is the included angle between each IGBT chip and each AMR sensor along the vertical direction and the distance direction.

4. The non-invasive crimp-type IGBT current distribution measurement method according to claim 1, characterized in that: The method of solving the IGBT chip current in the magnetic induction intensity calculation matrix to realize the IGBT current distribution measurement includes: Based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, the IGBT chip current distribution is initialized to zero, and the iteration step parameter is set to ensure that the result gradually converges; During the iteration process, the residual between the currently estimated IGBT chip current distribution and the actual measurement data is calculated, and the residual is corrected according to the iteration step parameter, and the IGBT chip current distribution is dynamically updated until the residual meets the preset accuracy requirement.

5. A non-invasive crimping type IGBT current distribution measurement device, characterized in that: The device comprises: A measurement array arrangement module, used to: collect the magnetic field strength generated by multiple parallel-connected crimped IGBTs to be detected based on a pre-constructed measurement array, wherein the multiple parallel-connected crimped IGBT chips to be detected are arranged on a boss inside the pre-constructed measurement array, the measurement array includes multiple AMR magnetic sensors evenly placed along a circle, the direction of the magnetic field formed by the multiple parallel-connected crimped IGBT chips is consistent along the clockwise or counterclockwise direction of the circle, and the bosses are evenly arranged along the inner concentric circles of the circle; The magnetic field strength simulation module is used to simulate the magnetic field strength detected by each AMR sensor based on the vacuum magnetic permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor; A magnetic induction intensity calculation module is used to: construct a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor and the current of each IGBT chip, wherein the magnetic induction intensity is determined according to the vacuum magnetic permeability, the distance from each IGBT chip to each AMR sensor and the angle between the vertical direction and the distance direction; The current distribution solving module is used to solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize the IGBT current distribution measurement.

6. The non-invasive crimping type IGBT current distribution measurement device according to claim 5, characterized in that: The magnetic field strength simulation module is specifically used for: The magnetic field strength detected by each AMR sensor is simulated based on the following formula: Wherein, B is the magnetic field strength detected by each AMR sensor; μ0 is the vacuum magnetic permeability; I is the IGBT chip current; r is the distance from the IGBT chip to the AMR sensor.

7. The non-invasive crimping type IGBT current distribution measurement device according to claim 5, characterized in that: The magnetic induction intensity calculation module is specifically used for: The current magnetic induction intensity calculation matrix is ​​constructed based on the following formula: Among them, B1 to B m is the magnetic induction intensity of each AMR sensor; I1 to I n is the current of each IGBT chip; M 11 To M mn Calculating a magnetic induction intensity coefficient for each of the AMR sensors; Among them, r mn is the distance from each IGBT chip to each AMR sensor; θ mn It is the included angle between each IGBT chip and each AMR sensor along the vertical direction and the distance direction.

8. The non-invasive crimping type IGBT current distribution measurement device according to claim 5, characterized in that: The current distribution solution module includes: An initialization unit is used to: based on the magnetic induction intensity calculation matrix, use the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix to initialize the IGBT chip current distribution to zero, and set an iteration step parameter to ensure that the result gradually converges; The iterative update unit is used to: during the iteration process, calculate the residual between the currently estimated IGBT chip current distribution and the actual measurement data, and correct the residual according to the iteration step parameter, and dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirement.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the steps of the non-invasive crimp-type IGBT current distribution measurement method according to any one of claims 1 to 4 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the non-invasive crimp-type IGBT current distribution measurement method according to any one of claims 1 to 4 are implemented.

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