Vertical cavity surface emitting laser, preparation method, laser radar system and light source of laser radar system

Abstract

The invention relates to the technical field of vertical-cavity surface-emitting lasers, and provides a vertical-cavity surface-emitting laser, a preparation method, a laser radar system and a light source of the laser radar system. The light emitting units in the vertical cavity surface emitting laser are separated through a groove. Each light-emitting unit comprises an epitaxial layer and an ohmic contact layer which are sequentially arranged on the substrate; the groove is formed in the epitaxial layer; wherein an ion implantation part formed on the side wall of the epitaxial layer is arranged below the ohmic contact layer of at least part of the light-emitting units, and the current, injected into the epitaxial layer through the ohmic contact layer, of at least one light-emitting unit is different from the current, injected into the epitaxial layer through the ohmic contact layer, of other light-emitting units; the phenomenon that the peripheral light-emitting hole has a high-order mode too early due to non-uniform injection current is avoided, the problem of a far-field divergence angle is improved, and the use performance of the vertical-cavity surface-emitting laser is ensured.

Description

Technical Field

[0001] The present invention belongs to the technical field of vertical cavity surface emitting lasers, and particularly relates to a vertical cavity surface emitting laser and a preparation method thereof, a lidar system and a light source thereof. Background Art

[0002] In the design of vertical cavity surface emitting lasers, the far-field divergence angle and the optical power restrict each other, and both of these two indicators are very important for VCSELs. Usually, in order to pursue a small divergence angle, the vertical cavity surface emitting laser reduces the far-field divergence angle at the expense of power. Conversely, in order to compensate for the loss of optical power of the vertical cavity surface emitting laser, it is necessary to increase the number of light-emitting holes on the vertical cavity surface emitting laser. The increased light-emitting holes will bring problems such as an increase in chip size and heat generation, and will also cause uneven injection current, which in turn increases the loss of unit optical power of the light-emitting holes, and the uneven current injection also causes an increase in the far-field divergence angle, affecting the performance of the vertical cavity surface emitting laser. Summary of the Invention

[0003] An object of the present invention is to at least overcome one of the above-mentioned deficiencies of the prior art, and provide a vertical cavity surface emitting laser and a preparation method thereof, a lidar system and a light source thereof, so as to avoid an excessive far-field divergence angle of the vertical cavity surface emitting laser and ensure the performance of the vertical cavity surface emitting laser.

[0004] The technical solution of the present invention is as follows: A vertical cavity surface emitting laser includes a device substrate, and the device substrate includes a substrate and a plurality of light-emitting units disposed on the substrate, and each of the light-emitting units is separated by a groove; Each light-emitting unit includes an epitaxial layer and an ohmic contact layer disposed on the substrate in sequence; the groove is formed in the epitaxial layer; Wherein, an ion implantation portion formed on the sidewall of the epitaxial layer is provided under the ohmic contact layer of at least some of the light-emitting units, and the ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer via the ohmic contact layer; after the ion implantation portion is formed, each of the light-emitting units satisfies the following conditions: The current injected into the epitaxial layer via the ohmic contact layer of at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer of the remaining light-emitting units.

[0005] Optionally, the device substrate has at least two light-emitting regions arranged away from the set position from a self-set position, and at least one light-emitting unit is provided in each of the light-emitting regions; the set position is the center point of the light-emitting unit region, or, the device substrate is provided with a first power access portion on one side of the light-emitting unit region, and the set position is a position away from the first power access portion; Through the configuration of the ion implantation part, the current injected into the epitaxial layer by at least one light-emitting unit far from the set position via the ohmic contact layer is greater than the current injected into the epitaxial layer by at least one light-emitting unit relatively close to the light-emitting unit via the ohmic contact layer.

[0006] Optionally, the projected area of the ion implantation part of at least one of the light-emitting units in the direction of the substrate is S1, and the projected area of the ion implantation part of at least one of the light-emitting units in the direction of the substrate is S2, and S1 is greater than S2; And / or, the ion implantation part is not provided in the epitaxial layer below at least one of the light-emitting units.

[0007] Optionally, each of the light-emitting units includes a light-emitting hole and a conductive channel disposed around the light-emitting hole; the vertical cavity surface emitting laser is provided with a first electrode, and a plurality of the conductive channels are disposed around the periphery of each of the light-emitting holes; One end of the conductive channel is connected to the first electrode, and the ohmic contact layer is connected to the other end of the conductive channel. Optionally, the epitaxial layer includes a semiconductor contact layer and a P-DBR layer sequentially disposed below the ohmic contact layer; The ion implantation part is formed in the semiconductor contact layer, or the ion implantation part is formed in the semiconductor contact layer and the P-DBR layer. Optionally, the epitaxial layer further includes a photoelectric confinement layer, a multi-quantum well layer, and an N-DBR layer sequentially disposed below the P-DBR layer, and the ion implantation part is formed in the semiconductor contact layer, the P-DBR layer, the photoelectric confinement layer, the multi-quantum well layer, and a part of the N-DBR layer.

[0008] Optionally, the device substrate includes a passivation layer, the conductive channel penetrates through the passivation layer, the first electrode is disposed on one side of the passivation layer and connected to the first end of the conductive channel, The ohmic contact layer is a P-type ohmic contact layer and is disposed on the other side of the passivation layer and connected to the second end of the conductive channel.

[0009] The present invention further provides a manufacturing method of a vertical cavity surface emitting laser for manufacturing the above-mentioned vertical cavity surface emitting laser, including: When manufacturing the vertical cavity surface emitting laser, an ion implantation part formed on the side wall of the epitaxial layer is provided below the ohmic contact layer of at least part of the light-emitting units, and the ion implantation part is configured to adjust the magnitude of the current injected into the epitaxial layer via the ohmic contact layer; each of the light-emitting units after the ion implantation part is formed satisfies the following conditions: The current injected into the epitaxial layer by at least one light-emitting unit via the ohmic contact layer is different from the current injected into the epitaxial layer by the remaining light-emitting units via the ohmic contact layer.

[0010] The present invention also provides a light source for a lidar system, including at least one of the above vertical cavity surface emitting lasers.

[0011] The present invention also provides a lidar system, including a transmitting component for transmitting a light source and a receiving component for receiving the light source, and the transmitting component uses the above light source for a lidar system.

[0012] For the vertical cavity surface emitting laser, preparation method, lidar system and its light source provided by the present invention, the current injected into the epitaxial layer by at least one light-emitting unit via the ohmic contact layer is different from the current injected into the epitaxial layer by the remaining light-emitting units via the ohmic contact layer. In this way, by adjusting the current passing ability of the light-emitting units, it is beneficial to make the current passing abilities of the light-emitting units balanced and consistent, so as to achieve the purpose of adjusting the current injection uniformity of different light-emitting units at different positions, and further avoid the phenomenon that the high-order modes appear prematurely in the peripheral light-emitting holes due to uneven injection current. It also avoids the problem that the emission angle of the light-emitting units in the edge region is too large, which affects the far-field divergence angle of the vertical cavity surface emitting laser. The far-field divergence angle can be reduced without sacrificing power, ensuring the performance of the vertical cavity surface emitting laser. Description of the Drawings

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0014] Figure 1 is a top view of a vertical cavity surface emitting laser provided by an embodiment of the present invention; Figure 2 is a schematic diagram of the arrangement of light-emitting units in the light-emitting unit area of a vertical cavity surface emitting laser provided by an embodiment of the present invention; Figure 3 is Figure 1 the cross-sectional schematic diagram of the A-A section in

[0015] 100, device substrate; 101, light-emitting unit area; 110, light-emitting unit; 111, light-emitting hole; 210, first power supply connection part; 110a, first light-emitting area; 110b, second light-emitting area; 120, first electrode; 112, conductive channel; 130, passivation layer; 140, ohmic contact layer; 150, semiconductor contact layer; 160, epitaxial layer; 161, P-DBR layer; 162, optical limiting layer; 163, multiple quantum well layer; 164, N-DBR layer; 170, second electrode; 190, ion implantation part; 200, substrate. Detailed implementation manners

[0016] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0017] It should be noted that the terms "arranged" and "connected" should be understood in a broad sense. For example, they can be directly arranged and connected, or indirectly arranged and connected through intermediate components and intermediate structures.

[0018] In addition, in the embodiments of the present invention, if there are terms indicating orientation or positional relationships such as "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., they are based on the orientation or positional relationships shown in the drawings or the conventional placement states or usage states. They are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the structures, features, devices or elements referred to must have specific orientation or positional relationships, nor must they be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more.

[0019] In the various specific technical features and each embodiment described in the detailed implementation manners, they can be combined in any suitable manner without conflict. For example, different embodiments can be formed by combining different specific technical features / embodiments. To avoid unnecessary repetition, various possible combination methods of the various specific technical features / embodiments in the present invention will not be described separately.

[0020] Such as Figure 1 and Figure 2As shown in the figure, a vertical cavity surface emitting laser provided by an embodiment of the present invention includes a device substrate 100. The device substrate 100 includes a substrate 200 and a plurality of light emitting units 110 disposed on the substrate 200. Each of the light emitting units 110 is separated by a groove. Each light emitting unit 110 includes an epitaxial layer 160 and an ohmic contact layer 140 disposed on the substrate 200 in sequence; the groove is formed in the epitaxial layer 160; An ion implantation portion 190 formed on the sidewall of the epitaxial layer 160 is provided below the ohmic contact layer 140 of at least some of the light emitting units 110. The ion implantation portion 190 is configured to adjust the magnitude of the current injected into the epitaxial layer 160 via the ohmic contact layer 140; each of the light emitting units 110 after the formation of the ion implantation portion 190 satisfies the following conditions: The current injected into the epitaxial layer 160 via the ohmic contact layer 140 of at least one light emitting unit 110 is different from the current injected into the epitaxial layer 160 via the ohmic contact layer 140 of the remaining light emitting units 110. In this way, by adjusting the current passing ability of the light emitting units 110, it is beneficial to make the current passing abilities of the light emitting units 110 balanced and consistent, and avoid the light emitting angle of the light emitting units 110 in a local area (especially the edge area) from being too large and affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0021] Specifically, the device substrate 100 has a light emitting unit area 101. The light emitting unit area 101 includes at least two light emitting regions, and each light emitting region is arranged away from the set position. The set position may be the center point of the light emitting unit area 101 (such as the O point shown in Figure 2 ), or the device substrate 100 is provided with a first power supply access portion 210 (which can be used to connect to the positive pole of the power supply) located on one side of the light emitting unit area 101, and the set position is a position away from the first power supply access portion 210. At least one light emitting unit 110 is provided in each of the light emitting regions; some or all of the light emitting units 110 are correspondingly provided with ion implantation portions 190 (such as the solid ring portions in Figure 1 、 Figure 2 ). Through the configuration of the ion implantation portion 190, the current injected into the epitaxial layer 160 via the ohmic contact layer 140 of at least one light emitting unit 110 far from the set position is greater than the current injected into the epitaxial layer 160 via the ohmic contact layer 140 of at least one light emitting unit 110 relatively close to the set position, so as to avoid the light emitting angle of the light emitting units 110 in the edge area from being too large and affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0022] In a specific application, the projected area of the ion implantation part 190 in at least one of the light-emitting units 110 in the direction of the substrate 200 is S1, and the projected area of the ion implantation part 190 in at least one of the light-emitting units 110 in the direction of the substrate 200 is S2, and S1 is greater than S2. By controlling the effective area of the ion implantation part 190, the current injection capacity of the corresponding light-emitting unit 110 through the ohmic contact layer 140 to the epitaxial layer 160 is adjusted, so that the current injection capacities of the light-emitting units 110 are balanced, and the problem that the light-emitting angle of the light-emitting unit 110 in the edge region is too large and affects the far-field divergence angle of the vertical cavity surface emitting laser can be avoided.

[0023] In this embodiment, the set position is taken as the center of the light-emitting unit area 101. In this way, the current relatively tends to flow to the light-emitting unit 110 in the central region, so that the current and power borne by the light-emitting unit 110 in the central region are relatively large, and the current and power borne by the light-emitting unit 110 in the peripheral region are relatively small, thereby limiting the increase of the far-field divergence angle. The problem of the far-field divergence angle can be improved by changing the size of the ion implantation part to allocate the current and power, and the far-field divergence angle can be reduced without sacrificing power, ensuring the use performance of the vertical cavity surface emitting laser.

[0024] It can be understood that the implantation of ions will introduce lattice defects in the material, such as vacancies and interstitial atoms, and these defects will reduce the mobility of carriers, thereby reducing the conductivity of the ion implantation part 190. Proton implantation can be used instead of ion implantation. The ion implantation part 190 can be integrally annular.

[0025] In a specific application, as a first resistance adjustment method, the width of the ion implantation part 190 relatively far from the set position is greater than the width of the ion implantation part 190 relatively close to the set position.

[0026] As a second resistance adjustment method, the thickness of the ion implantation part 190 relatively far from the set position is greater than the thickness of the ion implantation part 190 relatively close to the set position.

[0027] In some alternative embodiments, except for the light-emitting units 110 in the light-emitting area close to the set position, the rest of the light-emitting units 110 are correspondingly provided with the ion implantation part 190, that is, the light-emitting unit 110 closest to the set position may not be provided with the ion implantation part 190.

[0028] Specifically, as Figures 1 to 3 shown, the light-emitting area includes a first light-emitting area 110a and a second light-emitting area 110b. The first light-emitting area 110a is closer to the center of the light-emitting unit area 101 than the second light-emitting area 110b, and the second light-emitting area 110b is arranged on the outer periphery of the first light-emitting area 110a (such asFigure 3 as shown); alternatively, the second light-emitting region 110b is disposed on a side of the first light-emitting region 110a away from the set position. In a specific application, the first light-emitting region 110a may be circular or polygonal, the second light-emitting region 110b may be circular-ring-shaped or multi-sided-ring-shaped, and the second light-emitting region 110b is disposed around the periphery of the first light-emitting region 110a, that is, the light-emitting units 110 in the second light-emitting region 110b are relatively closer to the edge of the vertical cavity surface emitting laser than the light-emitting units 110 in the first light-emitting region 110a. Of course, in a specific application, a third light-emitting region may be disposed around the periphery of the second light-emitting region 110b. Similarly, a fourth light-emitting region may be disposed around the periphery of the third light-emitting region, and so on, which will not be elaborated herein.

[0029] Specifically, an ion implantation part 190 is disposed below each light-emitting unit 110 in the first light-emitting region 110a, and the area of each ion implantation part 190 is A1. An ion implantation part 190 is disposed below the second light-emitting region 110b, and the area of each ion implantation part 190 is A2, and A1 is less than A2. In this way, for the light-emitting units 110 relatively closer to the set position (the center of the light-emitting unit area), the current and power they can carry are relatively greater.

[0030] In this embodiment, one light-emitting unit 110 is disposed in the first light-emitting region 110a, and the light-emitting unit 110 is disposed at the center point. Alternatively, a plurality of light-emitting units 110 are disposed in the first light-emitting region 110a, and each of the light-emitting units 110 is evenly distributed along the circumferential direction with the center point as the center; that is, one or more light-emitting units 110 may be disposed in the first light-emitting region 110a. In this embodiment, the light-emitting unit 110 in the first light-emitting region 110a is taken as an example. Of course, the number of light-emitting units 110 in the first light-emitting region 110a may also be three or four or other appropriate numbers. When a plurality of light-emitting units 110 are disposed in the first light-emitting region 110a, each of the light-emitting units 110 may be arranged according to a set rule or randomly arranged.

[0031] Specifically, a plurality of light-emitting units 110 are disposed in the second light-emitting region 110b. In this embodiment, the light-emitting units 110 in the second light-emitting region 110b are taken as six as an example. Of course, the number of light-emitting units 110 may also be 8 or 10 or other appropriate numbers, and each of the light-emitting units 110 is evenly distributed along the circumferential direction with the center point as the center around the periphery of the first light-emitting region 110a, and each of the light-emitting units 110 may be arranged according to a set rule or randomly arranged.

[0032] In specific applications, if more light-emitting units 110 or vertical cavity surface emitting lasers of a larger size are required, the light-emitting region further includes a third light-emitting region, and the third light-emitting region can be disposed around the periphery of the second light-emitting region 110b. A plurality of light-emitting units 110 are disposed in the third light-emitting region, and each of the light-emitting units 110 is evenly distributed in a circumferential direction around the second light-emitting region 110b with the center point as the center, forming a three-ring structure.

[0033] In specific applications, that is, each of the light-emitting units 110 can adopt a double-ring or multi-ring arrangement. The inner ring can have one or more light-emitting units 110, and multiple light-emitting units 110 can be disposed in both the second ring and the third ring. Among them, the light-emitting unit 110 closer to the outer ring has a relatively smaller current-carrying capacity, so as to reduce the current and power of the outer-ring light-emitting unit 110 and prevent its emission angle from being too large.

[0034] Specifically, as Figures 1 to 3 shown, each of the light-emitting units 110 includes a light-emitting hole 111 and a current injection structure, and the current injection structure can be disposed around the light-emitting hole 111; a first electrode 120 (which can be an Au layer for connecting to the positive electrode) is disposed on one side of the device substrate 100, and the first electrode 120 can be electrically connected to the first power supply access portion 210. A second electrode (which can be an Au layer for connecting to the negative electrode) is disposed on the other side of the device substrate 100. The current injection structure includes a conductive channel 112 electrically connected between the first electrode 120 and the second electrode. A plurality of the conductive channels 112 are disposed around the periphery of each of the light-emitting holes 111. The conductive channels 112 can be (cylindrical) metal-filled holes, and a plurality of conductive channels 112 can be correspondingly disposed around the outer periphery of each light-emitting hole 111. Figure 2 Among them, 6 conductive channels 112 are correspondingly disposed around the outer periphery of each light-emitting hole 111.

[0035] As Figure 3As shown, the vertical cavity surface emitting laser includes an ohmic contact layer 140, and the ion implantation portion 190 is in contact with the ohmic contact layer 140. One end of the conductive channel 112 is connected to the first electrode 120, and the ohmic contact layer 140 is a P-type ohmic contact layer connected to the other end of the conductive channel 112. An epitaxial layer 160 is provided below the ohmic contact layer 140. The bottom surface of the substrate may be provided with the second electrode 170 (which may be a conductive metal layer for connecting to the negative electrode). In a specific application, the epitaxial layer 160 includes a semiconductor contact layer 150, a P-DBR layer 161, an optical confinement layer (OA layer) 162, a multi-quantum well layer (MQW layer) 163, and an N-DBR layer 164 that are sequentially provided below the ohmic contact layer 140. The P-DBR layer 161, i.e., the P-type distributed Bragg reflector, and the bottom N-DBR layer 164 together form an optical resonator to reflect light of a specific wavelength and enhance laser output. The P-DBR layer 161 can be composed of multiple layers of materials with different refractive indexes, usually P-type doped. The optical confinement layer 162 (OA layer) is used to confine the light-emitting area of the vertical cavity surface emitting laser. It mainly obtains alumina by wet oxidation of the high-aluminum component layer in the P-DBR to form a refractive index difference with the high-aluminum component layer in the central region to achieve light confinement. Alumina itself is insulating, so current control can be achieved. The multi-quantum well layer 163 (MQW layer) serves as the active region, i.e., the multi-quantum well active region (MQW Active Region), which is the region where laser is generated. The multi-quantum well structure is composed of alternating potential well layers and barrier layers. Carriers (electrons and holes) recombine in the potential well layers to generate photons and achieve stimulated emission. The N-DBR layer 164 is an N-type distributed Bragg reflector and serves as the bottom reflector. Together with the top P-DBR layer 161, it forms an optical resonator to reflect light of a specific wavelength and enhance laser output. The N-DBR layer 164 can be composed of multiple layers of materials with different refractive indexes, usually N-type doped.

[0036] Specifically, the P-DBR layer 161 is located below the semiconductor contact layer 150, and the P-DBR layer 161, the optical confinement layer 162, the multi-quantum well layer 163, and the N-DBR layer 164 are arranged from top to bottom. The ion implantation portion 190 can be formed in the semiconductor contact layer 150, the P-DBR layer 161, the optical confinement layer 162, the multi-quantum well layer 163, and a part of the N-DBR layer 164. By controlling the energy and / or time and / or dose of ion implantation, the depth of its downward implantation can be controlled, that is, to control which layer of the epitaxial layer the ion implantation portion is specifically formed in.

[0037] In this embodiment, the ohmic contact layer 140 is a P-type ohmic contact layer, and the vertical cavity surface emitting laser emits light from the front. When the ohmic contact layer 140 is an N-type ohmic contact layer, the N-type ohmic contact layer is disposed closer to the second electrode 170 relative to the conductive channel 112, and the vertical cavity surface emitting laser is a vertical cavity surface emitting laser that emits light from the back.

[0038] Specifically, the device substrate 100 further includes a passivation layer (which may be a SiN layer) 130. The conductive channel 112 penetrates through the passivation layer 130. The first electrode 120 (which may be a gold plating layer) is disposed on one side of the passivation layer 130 and connected to the first end of the conductive channel 112. The P-type ohmic contact layer is disposed on the other side of the passivation layer 130 and connected to the second end of the conductive channel 112.

[0039] Specifically, the ion implantation portion 190 is formed in the semiconductor contact layer 150, or the ion implantation portion 190 is formed in the semiconductor contact layer 150 and the P-DBR layer 161.

[0040] Specifically, in this embodiment, the ion implantation portion 190 is formed in the semiconductor contact layer 150 and the P-DBR layer 161, and the ion implantation portion 190 is located between the ohmic contact layer 140 and the optical confinement layer 162. That is, ions are implanted into a set area between the P-type ohmic contact layer and the optical confinement layer 162 to form the ion implantation portion 190, so as to relatively reduce the resistance value corresponding to the light emitting unit at the central position.

[0041] An embodiment of the present invention further provides a method for manufacturing a vertical cavity surface emitting laser for manufacturing the above-mentioned vertical cavity surface emitting laser, including: When manufacturing the vertical cavity surface emitting laser, An ion implantation portion 190 formed on the sidewall of the epitaxial layer 160 is provided under at least a part of the ohmic contact layer 140 of the light emitting unit 110. The ion implantation portion 190 is configured to adjust the magnitude of the current injected into the epitaxial layer 160 via the ohmic contact layer 140. Each of the light emitting units 110 after the ion implantation portion 190 is formed satisfies the following conditions: The current injected into the epitaxial layer 160 via the ohmic contact layer 140 of at least one light emitting unit 110 is different from the current injected into the epitaxial layer 160 via the ohmic contact layer 140 of the remaining light emitting units 110. In this way, by adjusting the current passing ability of the light emitting unit 110, it is beneficial to make the current passing abilities of the light emitting units 110 balanced and consistent, and avoid the light emitting angle of the light emitting units 110 in a local area (especially the edge area) from being too large and affecting the far-field divergence angle of the vertical cavity surface emitting laser.

[0042] As Figure 3 The arrow shown in Figure 3 is the current injection direction of the vertical cavity surface emitting laser. It can be seen that after the current passes through the conductive channel 112, it passes through the ohmic contact layer 140 and the semiconductor contact layer 150, and then flows from the hole position of the optical confinement layer 162 to the multi-quantum well layer 163 to achieve laser excitation.

[0043] An embodiment of the present invention further provides a laser device, and the laser device includes a vertical cavity surface emitting laser as described above.

[0044] An embodiment of the present invention further provides a light source for a lidar system, including at least one vertical cavity surface emitting laser as described above.

[0045] An embodiment of the present invention further provides a lidar system, including a transmitting component and a receiving component, and the transmitting component uses the light source for the lidar system as described above.

[0046] The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements or improvements made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A vertical cavity surface emitting laser, characterized in that, It includes a device substrate, the device substrate includes a substrate and a plurality of light-emitting units disposed on the substrate, and each of the light-emitting units is separated by a groove; Each light-emitting unit includes an epitaxial layer and an ohmic contact layer disposed on the substrate in sequence; the groove is formed in the epitaxial layer; Wherein, an ion implantation portion formed on the sidewall of the epitaxial layer is provided under the ohmic contact layer of at least some of the light-emitting units, and the ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer via the ohmic contact layer; each of the light-emitting units after the ion implantation portion is formed satisfies the following conditions: The current injected into the epitaxial layer via the ohmic contact layer of at least one light-emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer of the remaining light-emitting units.

2. The vertical cavity surface emitting laser according to claim 1, characterized in that, The device substrate has at least two light-emitting regions arranged away from the set position from the set position, and at least one light-emitting unit is provided in each light-emitting region; the set position is the center point of the light-emitting unit region, or, the device substrate is provided with a first power access portion on one side of the light-emitting unit region, and the set position is a position away from the first power access portion; Through the configuration of the ion implantation portion, the current injected into the epitaxial layer via the ohmic contact layer of at least one light-emitting unit away from the set position is greater than the current injected into the epitaxial layer via the ohmic contact layer of at least one relatively closer light-emitting unit.

3. The vertical cavity surface emitting laser according to claim 1 or 2, characterized in that, The projected area of the ion implantation portion in the direction of the substrate of at least one of the light-emitting units is S1, the projected area of the ion implantation portion in the direction of the substrate of at least one of the light-emitting units is S2, and S1 is greater than S2; And / or, the epitaxial layer of at least one of the light-emitting units is not provided with the ion implantation portion.

4. The vertical cavity surface emitting laser according to claim 1 or 2, characterized in that, Each of the light-emitting units includes a light-emitting hole and a conductive channel disposed around the light-emitting hole; the vertical cavity surface emitting laser is provided with a first electrode, and a plurality of the conductive channels are disposed around the periphery of each light-emitting hole; One end of the conductive channel is connected to the first electrode, and the ohmic contact layer is connected to the other end of the conductive channel.

5. The vertical cavity surface emitting laser according to claim 4, characterized in that, The epitaxial layer includes a semiconductor contact layer and a P-DBR layer disposed in sequence under the ohmic contact layer; The ion implantation portion is formed in the semiconductor contact layer, or, the ion implantation portion is formed in the semiconductor contact layer and the P-DBR layer.

6. The vertical cavity surface emitting laser according to claim 5, characterized in that, The epitaxial layer further includes a photoelectric confinement layer, a multi-quantum well layer and an N-DBR layer sequentially disposed under the P-DBR layer, and the ion implantation portion is formed in the semiconductor contact layer, the P-DBR layer, the photoelectric confinement layer, the multi-quantum well layer and a part of the N-DBR layer.

7. The vertical cavity surface emitting laser according to claim 6, characterized in that, The device substrate includes a passivation layer, the conductive channel penetrates through the passivation layer, the first electrode is disposed on one side of the passivation layer and connected to the first end of the conductive channel, The ohmic contact layer is a P-type ohmic contact layer and is disposed on the other side of the passivation layer and connected to the second end of the conductive channel.

8. A method for manufacturing a vertical cavity surface emitting laser, characterized in that, For manufacturing a vertical cavity surface emitting laser according to any one of claims 1 to 7, including: When fabricating the vertical cavity surface emitting laser, an ion implantation portion formed on the sidewall of the epitaxial layer is provided under the ohmic contact layer of at least part of the light emitting units, and the ion implantation portion is configured to adjust the magnitude of the current injected into the epitaxial layer via the ohmic contact layer; each of the light emitting units after the ion implantation portion is formed satisfies the following condition: The current injected into the epitaxial layer via the ohmic contact layer of at least one light emitting unit is different from the current injected into the epitaxial layer via the ohmic contact layer of the remaining light emitting units.

9. A light source for a lidar system, characterized in that, Comprising at least one vertical cavity surface emitting laser according to any one of claims 1-7.

10. A lidar system, characterized in that, Comprising a transmitting component for emitting a light source and a receiving component for receiving the light source, and the transmitting component uses the light source for a lidar system according to claim 9.

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