Tunable signal amplifier and device

Abstract

The invention provides a tunable signal amplifier and equipment. The tunable signal amplifier comprises a black phosphorus transistor and a current source load, the black phosphorus transistor comprises a silicon back gate electrode, a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer and a top gate electrode; a substrate insulating layer, a black phosphorus nanosheet and a gate medium insulating layer are sequentially arranged in a vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer and the gate dielectric insulating layer are used for isolating the gate and controlling the conductive state of the channel; the black phosphorus nanosheet is a conducting channel of a double-gate device structure, and under the action of a vertical electric field, regulation and control of the carrier mobility and intrinsic resistance of the black phosphorus are realized by changing the band gap of the black phosphorus nanosheet, so that the black phosphorus amplifier with tunable gain and bandwidth is realized. According to the tunable signal amplifier provided by the invention, the flexibility of signal processing can be improved, so that the design requirements of electronic equipment with low hardware consumption and multiple working frequency bands are met.

Description

Technical Field

[0001] The present invention relates to the technical field of microelectronic devices, and particularly to a tunable signal amplifier and a device. Background Art

[0002] In recent years, with the rapid development of computer application technology, various intelligent electronic devices have been more and more widely used in people's daily production and life. At present, signal amplifiers are widely used in various electronic devices such as audio devices, communication systems, and instruments. However, due to the fixed bandgap of silicon, the signal amplifier based on traditional silicon has limited performance adjustment ability after design, and cannot achieve tunable signal processing, resulting in a large number of integrated devices required, poor flexibility, and difficulty in meeting the design requirements of electronic devices with low hardware consumption and multiple working frequency bands. Summary of the Invention

[0003] The present invention provides a tunable signal amplifier and a device, which are used to solve the defect that in the prior art, due to the fixed bandgap of silicon, the signal amplifier based on traditional silicon has limited performance adjustment ability after design, cannot achieve tunable signal processing, resulting in poor flexibility and difficulty in meeting the design requirements of electronic devices with low hardware consumption and multiple working frequency bands.

[0004] The present invention provides a tunable signal amplifier, comprising: a black phosphorus transistor and a current source load; The black phosphorus transistor includes a back gate electrode, a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer, and a top gate electrode; Wherein, the back gate electrode is used to apply a back gate voltage through a voltage source, and the top gate electrode is used to apply a top gate voltage through a voltage source, so as to form a vertical electric field between the back gate electrode and the top gate electrode; The substrate insulating layer, the black phosphorus nanosheet, and the gate dielectric insulating layer are sequentially arranged in the vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer and the gate dielectric insulating layer are respectively used to isolate the gate and control the conductive state of the channel, and the gate includes the top gate electrode and the back gate electrode; The black phosphorus transistor has a double-gate structure and is used to adjust the carrier mobility and intrinsic resistance in the black phosphorus nanosheet by changing the bandgap of the layered black phosphorus under the action of a vertical electric field, so as to realize a black phosphorus amplifier with adjustable gain and bandwidth and output a processed signal. Among them, the magnitude of the gain corresponds to the amplification factor of the tunable signal amplifier, and the magnitude of the bandwidth corresponds to the processing signal frequency of the tunable signal amplifier. The source metal electrode and the drain metal electrode are respectively arranged at two opposite ends of the black phosphorus nanosheet. The source metal electrode is grounded, and the drain metal electrode is connected to the current source load and an external voltage source. The external voltage source is used to input a voltage to the drain metal electrode to form a conductive channel in the black phosphorus nanosheet, so as to directionally drive the carriers in the layered black phosphorus to move.

[0005] According to the tunable signal amplifier of the present invention, the black phosphorus nanosheet is a black phosphorus nanofilms obtained by mechanically exfoliating a black phosphorus bulk single crystal with blue film tape.

[0006] According to the tunable signal amplifier of the present invention, the gate dielectric insulating layer is an Al2O3 insulating film formed by atomic layer deposition, and the film thickness is 15nm - 30nm, which is used to form a gate dielectric layer for channel control.

[0007] According to the tunable signal amplifier of the present invention, the top gate electrode is formed by laser direct writing or electron beam lithography, and the metal is deposited by a thermal evaporation device or an electron beam evaporation device to form the top gate electrode.

[0008] According to the tunable signal amplifier of the present invention, the source metal electrode and the drain metal electrode are formed by electron beam lithography, and the metal is deposited by a thermal evaporation device or an electron beam evaporation device to form the contact electrodes.

[0009] According to the tunable signal amplifier of the present invention, the current source load is a current source with a current of 15 μA and an internal resistance of 100 MΩ, which is used to ensure that the output resistance is only determined by the output resistance of the black phosphorus transistor.

[0010] According to the tunable signal amplifier of the present invention, the substrate is a P-type silicon substrate.

[0011] According to the tunable signal amplifier of the present invention, the thickness of the black phosphorus nanosheet is 20nm.

[0012] According to the tunable signal amplifier of the present invention, the top gate electrode is an Al electrode, and the thickness range is 30nm - 50nm.

[0013] The present invention also provides a device provided with a tunable signal amplifier, comprising: a signal input module, a tunable signal amplifier, and a signal output module; the signal input module, the tunable signal amplifier, and the signal output module are connected; The signal input module is configured to input a target signal into the tunable signal amplifier; wherein, the target signal is a voltage signal; The tunable signal amplifier is configured to obtain the target signal input by the signal input module, perform amplification processing on the target signal to obtain an amplified target signal; and send the amplified target signal to the signal output module; The signal output module is configured to obtain the amplified target signal sent by the tunable signal amplifier and output the amplified target signal.

[0014] The tunable signal amplifier provided by the present invention comprises: a black phosphorus transistor and a current source load; the black phosphorus transistor comprises a back gate electrode, a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer, and a top gate electrode; wherein, the back gate electrode is configured to apply a back gate voltage through a voltage source, and the top gate electrode is configured to apply a top gate voltage through a voltage source, so as to form a vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer, the black phosphorus nanosheet, and the gate dielectric insulating layer are sequentially arranged in the vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer and the gate dielectric insulating layer are respectively configured to isolate the gate and control the conductive state of the channel, and the gate comprises the top gate electrode and the back gate electrode; the black phosphorus transistor has a double-gate structure and is configured to change the bandgap of the layered black phosphorus in the black phosphorus nanosheet under the action of the vertical electric field, so as to adjust the carrier mobility and the intrinsic resistance in the black phosphorus nanosheet, so as to implement a black phosphorus amplifier with adjustable gain and bandwidth and output an amplified signal; wherein, the magnitude of the gain corresponds to the amplification factor of the tunable signal amplifier, and the magnitude of the bandwidth corresponds to the processing signal frequency of the tunable signal amplifier; the source metal electrode and the drain metal electrode are respectively arranged at two opposite ends of the black phosphorus nanosheet, the source metal electrode is grounded, and the drain metal electrode is connected to the current source load and an external voltage source; the external voltage source is configured to input a voltage to the drain metal electrode to form a conductive channel in the black phosphorus nanosheet, so as to directionally drive the carriers in the layered black phosphorus to move; it can effectively improve the flexibility of signal processing, so as to meet the design requirements of an electronic system with low hardware consumption and multiple working frequency bands. Description of the Drawings

[0015] To more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0016] Figure 1 It is a schematic structural diagram of a tunable signal amplifier provided by the present invention.

[0017] Figure 2 It is a schematic circuit diagram of a tunable signal amplifier provided by the present invention.

[0018] Figure 3 It is a light microscope image of the double-gate structure of a black phosphorus transistor in a tunable signal amplifier provided by the present invention.

[0019] Figure 4 It is a schematic diagram of the principle of Stark effect on the bandgap regulation of black phosphorus provided by the present invention.

[0020] Figure 5 It is a schematic diagram of the output voltage characteristic curve of a tunable signal amplifier provided by the present invention.

[0021] Figure 6 It is a schematic diagram of the tunable characteristic curve of a tunable signal amplifier provided by the present invention.

[0022] Among them, Figure 1 in, 101 is a silicon back gate electrode, 102 is a substrate insulating layer, 103 is a black phosphorus nanosheet, 104 is a source metal electrode, 105 is a drain metal electrode, 106 is a gate dielectric insulating layer, and 107 is a top gate electrode. Specific Embodiments

[0023] To make the objectives, technical solutions, and advantages of the present invention clearer, the following will clearly and completely describe the technical solutions in the present invention in conjunction with the drawings in the present invention. Obviously, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

[0024] The present invention provides a tunable signal amplifier and device based on the black phosphorus Stark effect. Among them, the black phosphorus transistor of the tunable signal amplifier adopts a double-gate structure, and the bandgap characteristics of black phosphorus are regulated by introducing a vertical external electric field. Utilizing the Stark effect, the change in the vertical electric field can significantly change the bandgap of black phosphorus, thereby adjusting its carrier concentration and mobility, further regulating the intrinsic resistance of the black phosphorus transistor, and ultimately realizing the controllability of the amplifier gain (amplification factor) and bandwidth (the signal frequency range that the tunable signal amplifier can process). Among them, the magnitude of the amplifier gain is closely related to the intrinsic resistance of the black phosphorus transistor in the saturation region: when the bandgap increases, the corresponding intrinsic resistance of the black phosphorus transistor increases, and the amplifier can achieve a larger gain; when the bandgap decreases, the carrier mobility is significantly improved, resulting in a decrease in the intrinsic resistance, thereby achieving a higher bandwidth. By regulating the top gate voltage and the back gate voltage, the flexible switching between the high-gain mode and the high-bandwidth mode of the tunable signal amplifier can be realized.

[0025] The following combines Figures 1-6 to describe the tunable signal amplifier and device of the present invention, and describes its embodiments in detail. As Figure 1 shown, the structural schematic diagram of the tunable signal amplifier provided by the present invention: The black phosphorus transistor includes a back gate electrode (i.e., a Si substrate or a silicon back gate electrode), a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer, and a top gate electrode. As Figure 2 shown, the back gate electrode is specifically Si, the substrate insulating layer is , the black phosphorus nanosheet is layered black phosphorus, the source metal electrode, the drain metal electrode, and the gate dielectric insulating layer are , and the top gate electrode is an Al electrode.

[0026] Among them, the back gate electrode is used to apply a back gate voltage through a voltage source, and the top gate electrode is used to apply a top gate voltage through a voltage source, so that a vertical electric field is formed between the back gate electrode and the top gate electrode.

[0027] The substrate insulating layer, the black phosphorus nanosheet, and the gate dielectric insulating layer are sequentially arranged in the vertical electric field between the back gate electrode and the top gate electrode. The substrate insulating layer and the gate dielectric insulating layer are respectively used to isolate the gate and control the conductive state of the channel, and the gate includes the top gate electrode and the back gate electrode.

[0028] The gate dielectric insulating layer is an Al2O3 insulating thin film formed by atomic layer deposition, that is, the material of the gate dielectric insulating layer is Al2O3, and the film thickness can be 15 nm - 30 nm, which is used to form a gate dielectric layer for channel control. The top gate electrode is formed by laser direct writing equipment or electron beam lithography, and a metal is deposited through a thermal evaporation equipment or an electron beam evaporation equipment to form the top gate electrode. The substrate is a P-type silicon substrate. The top gate electrode is an Al electrode, and the thickness range can be 30 nm - 50 nm. The overall structure composed of the substrate (i.e., P-type silicon wafer) and the substrate insulating layer (i.e., ), includes but is not limited to heavily doped P-type silicon wafers with surface dimensions of 100 nm, 200 nm, and 300 nm for applying a back gate voltage.

[0029] The black phosphorus transistor is a dual-gate structure optical microscope image as shown in Figure 3 . Under the action of a vertical electric field, it is used to change the bandgap E g of the layered black phosphorus in the black phosphorus nanosheet, so as to adjust the carrier mobility and intrinsic resistance in the black phosphorus nanosheet, to achieve a black phosphorus amplifier with tunable gain and bandwidth, and output an amplified processed signal. The black phosphorus nanosheet is a black phosphorus nanothin film obtained by mechanically exfoliating a black phosphorus bulk single crystal with blue film tape. Among them, the magnitude of the gain corresponds to the amplification factor of the tunable signal amplifier, and the magnitude of the bandwidth corresponds to the processing signal frequency of the tunable signal amplifier. The source metal electrode and the drain metal electrode are respectively arranged at two opposite ends of the black phosphorus nanosheet. The source metal electrode is grounded, and the drain metal electrode is connected to the load current source load and an external voltage source (i.e., ); the external voltage source is used to input a voltage to the drain metal electrode to form a conductive channel in the black phosphorus nanosheet, so as to directionally drive the carriers in the layered black phosphorus to move. The source metal electrode and the drain metal electrode are formed by electron beam lithography, and a metal is deposited through a thermal evaporation equipment or an electron beam evaporation equipment to form a contact electrode. The top gate voltage is scanned under different back gate bias voltages, and the output voltage is detected at the drain end (i.e., the drain metal electrode), that is, the amplified processed target signal. The current source load is the current source of the tunable signal amplifier, and the internal resistance ( RIN ) can be 100 MΩ, which is used to ensure that the output resistance is only determined by the output resistance of the black phosphorus transistor. The thickness of the black phosphorus nanosheet can be 20 nm, and it can be prepared by the method of mechanical exfoliation with blue film tape.

[0030] In the specific implementation process, by using the regulation of the bandgap of black phosphorus on the output impedance (i.e., the corresponding intrinsic resistance) of the black phosphorus transistor, the black phosphorus amplifier (i.e., the tunable signal amplifier) simultaneously has two different working modes of high gain and high bandwidth. With the applied voltage (i.e., equivalent to ) and changes, as shown in Figure 5 , the low-frequency gain of the tunable signal amplifier can be adjusted from 26.7 dB to 5.13 dB, while the corresponding bandwidth changes from 78.4 Hz to 241.7 Hz. Therefore, based on the Stark effect of black phosphorus materials, the present invention develops a tunable signal amplifier with adjustable performance and flexible modes, which can make up for the deficiencies of the prior art. As shown in Figures 4-6 , when the bandgap increases, the intrinsic resistance of the black phosphorus transistor increases, and the amplifier can achieve a larger gain; while when the bandgap decreases, the carrier mobility increases significantly, resulting in a decrease in the intrinsic resistance, thereby achieving a higher bandwidth. By adjusting the top gate voltage and the back gate voltage, flexible switching between the high-gain mode and the high-bandwidth mode of the tunable signal amplifier can be achieved.

[0031] Among them, the layered black phosphorus in the black phosphorus nanosheet is a two-dimensional material with unique properties. Under the action of an externally applied vertical electric field, the bandgap of black phosphorus can change significantly, and this property is called the Stark effect. In addition, black phosphorus also has properties such as high carrier mobility and bipolarity of the intrinsic resistance, making black phosphorus have great application potential in the design of frequency and gain tunable signal amplifiers. Therefore, developing a tunable signal amplifier based on the Stark effect of black phosphorus can make up for the deficiencies of the prior art. However, current research on the Stark effect of black phosphorus mostly focuses on the physical research level, but how to effectively apply this physical property to the design of tunable signal amplifiers is still a technical problem to be solved urgently. The tunable signal amplifier described in the present invention can not only reduce the number of integrated devices in the equipment, but also significantly improve the flexibility of the circuit, thereby meeting the design requirements of modern electronic devices with low hardware consumption and multiple operating frequency bands.

[0032] As shown in Figure 6 , Gain represents the magnitude of the gain, D represents the electric displacement (corresponding to the electric field strength), and f (Hz) represents the bandwidth (i.e., the frequency corresponding to the target signal).

[0033] In the process of fabricating a black phosphorus transistor for a tunable signal amplifier based on the Stark effect of Ti / Pd contact electrodes, the following steps are included: (1) First, an alignment pattern is prepared on the surface of a silicon wafer through electron beam lithography, electron beam evaporation, and lift-off. The silicon wafer is a P-doped silicon substrate (i.e., a P-type silicon substrate, which is a silicon substrate structure doped with impurities) and a 100-nm-thick silicon oxide on the substrate to obtain a substrate insulating layer, and the substrate is used to apply a back gate voltage. (2) A high-quality bulk single crystal of black phosphorus is selected and mechanically exfoliated using blue tape to obtain a 20-nm-thick black phosphorus nanosheet. (3) The obtained black phosphorus nanosheet is transferred to the substrate insulating layer prepared in step (1) with the assistance of a transfer platform to obtain a first sample. (4) PMMA electron beam resist is spin-coated on the first sample obtained in the above step and cured by heating at 150 °C for 5 min. The electrode pattern is defined graphically using an electron beam exposure system, and the exposed sample is developed in a developer for 3 min and then rinsed and fixed with isopropyl alcohol. (5) Source and drain metal electrodes are prepared using a thermal evaporation device. First, 5 nm of Ti and 30 nm of Pd are evaporated, and then immersed in to complete metal lift-off to obtain a second sample. (6) The second sample obtained in the above step is placed in a preset atomic force deposition system, and 20 nm of Al2O3 is deposited to form a top gate dielectric layer. (7) The same steps as in (4) are used to complete the coating, electron beam exposure, development, and fixing of the top gate electrode. (8) The top gate metal electrode is prepared using a thermal evaporation device. 30 nm of Al electrode is evaporated and metal lift-off is performed to complete the preparation of the top gate electrode. (9) The source electrode (i.e., the source metal electrode) of the fabricated black phosphorus transistor is grounded, and the drain electrode (i.e., the drain metal electrode) is connected to a current source load to complete as Figure 2 shown in the circuit structure.

[0034] Furthermore, the black phosphorus tunable signal amplifier prepared in the embodiments of the present invention was tested using a semiconductor analyzer. By utilizing the regulation of the output impedance of black phosphorus transistors by the bandgap of black phosphorus, the black phosphorus amplifier (i.e., the black phosphorus tunable signal amplifier) simultaneously has two different operating modes of high gain and high bandwidth. As the applied electric displacement increases, the low-frequency gain of the black phosphorus amplifier can be regulated from 26.7 dB to 5.13 dB, while the corresponding bandwidth changes from 78.4 Hz to 241.7 Hz. Therefore, based on the black phosphorus Stark effect, the present invention has developed a signal amplifier with adjustable performance and flexible modes, which can make up for the deficiencies of the prior art. Among them, the electric displacement, also known as the electric induction intensity, refers to the auxiliary physical quantity describing the electric field of the dielectric. That is, an auxiliary physical quantity used to describe the electric field, denoted by the symbol D. Its definition formula is: D = ε0E + P. Where E is the electric field strength, P is the polarization intensity, and ε0 is the vacuum permittivity. For a linear isotropic dielectric, D = εE, where ε is the absolute permittivity of the dielectric.

[0035] In the process of fabricating the black phosphorus transistor for the black phosphorus Stark effect-based tunable signal amplifier with Au contact electrodes, the following steps are included: (1) First, alignment patterns are prepared on the surface of the silicon wafer through electron beam lithography, electron beam evaporation, and stripping. The silicon wafer is a P-doped silicon substrate and a 100-nm-thick silicon oxide on the substrate, which is used to apply the back gate voltage. (2) A high-quality bulk single crystal of black phosphorus is selected and mechanically exfoliated using blue film tape to obtain a 20-nm-thick black phosphorus nanomembrane. (3) The obtained black phosphorus nanomembrane is transferred to the substrate prepared in step (1) by using a transfer platform to assist in fixed-point transfer to obtain a third sample. (4) PMMA electron beam resist is spin-coated on the third sample obtained in the above step and cured by heating at 150 °C for 5 min. The electrode pattern is defined graphically using an electron beam exposure system, and the exposed sample is developed in a developer for 3 min, and then rinsed and fixed with isopropyl alcohol. (5) Source and drain metal electrodes are prepared using a thermal evaporation device. First, 35 nm of Au is evaporated, and then soaked in acetone to complete metal stripping to obtain a fourth sample. (6) The fourth sample in the above step is placed in an atomic layer deposition system, and 20 nm of Al2O3 is deposited to form the top gate dielectric layer. (7) The same steps as in (4) are used to complete the coating, electron beam exposure, development, and fixing of the top gate electrode. (8) The top gate metal electrode is prepared using a thermal evaporation device. 30 nm of Al electrode is evaporated and metal stripping is performed to complete the preparation of the top gate electrode. (9) The source of the fabricated black phosphorus transistor is grounded, and the drain is connected to a current source load to complete the circuit structure.

[0036] Furthermore, the tunable signal amplifier prepared in the embodiments of the present invention is tested using a semiconductor analyzer. By utilizing the bandgap of black phosphorus to regulate the output impedance of black phosphorus transistors, the black phosphorus amplifier simultaneously has two different operating modes of high gain and high bandwidth. Therefore, the present invention develops an amplifier with adjustable performance and flexible modes based on the black phosphorus Stark effect, which can make up for the deficiencies of the prior art.

[0037] In the process of preparing a tunable signal amplifier based on the black phosphorus Stark effect with Pd contact electrodes, the following steps are included: (1) First, alignment patterns are prepared on the surface of a silicon wafer through electron beam lithography, electron beam evaporation, and lift-off. The silicon wafer is a P-doped silicon substrate and a 100-nm-thick silicon oxide on the substrate, which is used to apply a back-gate voltage. (2) A high-quality bulk single crystal of black phosphorus is selected and mechanically exfoliated using blue film tape to obtain a 20-nm-thick black phosphorus nanomembrane. (3) The obtained black phosphorus nanomembrane is transferred to the substrate and substrate insulating layer prepared in step (1) with the assistance of a transfer platform for fixed-point transfer to obtain a fifth sample. (4) PMMA electron beam resist is spin-coated on the fifth sample obtained in the above step, and the resist is cured by heating at 150 °C for 5 min. The electrode pattern is defined graphically using an electron beam exposure system, and the exposed sample is developed in a developer for 3 min, and then rinsed and fixed with isopropyl alcohol. (5) Source-drain metal electrodes are prepared using a thermal evaporation device. First, 35 nm of Pd is evaporated, and then it is soaked in acetone to complete metal lift-off to obtain a sixth sample. (6) The sixth sample obtained in the above step is placed in an atomic layer deposition system, and 20 nm of Al2O3 is deposited to form a top-gate dielectric layer. (7) The same steps as in (4) are used to complete the coating, electron beam exposure, development, and fixing of the top-gate electrode. (8) The top-gate metal electrode is prepared using a thermal evaporation device. 30 nm of Al electrode is evaporated and metal lift-off is performed to complete the preparation of the top-gate electrode. (9) The source of the black phosphorus transistor prepared above is grounded, and the drain is connected to a current source load to complete the circuit structure.

[0038] Furthermore, the tunable signal amplifier prepared in the embodiments of the present invention is tested using a semiconductor analyzer. By utilizing the bandgap of black phosphorus to regulate the output impedance of black phosphorus transistors, the black phosphorus amplifier simultaneously has two different operating modes of high gain and high bandwidth, realizing a tunable signal amplifier based on the black phosphorus Stark effect, which makes up for the deficiencies of the prior art.

[0039] The tunable signal amplifier provided by the present invention includes: a black phosphorus transistor and a current source load; the black phosphorus transistor includes a back gate electrode, a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer, and a top gate electrode; wherein, the back gate electrode is used to apply a back gate voltage through a voltage source, and the top gate electrode is used to apply a top gate voltage through a voltage source, so as to form a vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer, the black phosphorus nanosheet, and the gate dielectric insulating layer are sequentially arranged in the vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer and the gate dielectric insulating layer are respectively used to isolate the gate and control the conductive state of the channel, and the gate includes the top gate electrode and the back gate electrode; the black phosphorus nanosheet is a double-gate structure, and is used to change the bandgap of the layered black phosphorus in the black phosphorus nanosheet under the action of the vertical electric field, so as to adjust the carrier mobility and the intrinsic resistance in the black phosphorus nanosheet to realize a black phosphorus amplifier with adjustable gain and bandwidth, and output the amplified processed signal; wherein, the magnitude of the gain corresponds to the amplification factor of the tunable signal amplifier, and the magnitude of the bandwidth corresponds to the processing signal frequency of the tunable signal amplifier; the source metal electrode and the drain metal electrode are respectively arranged at two opposite ends of the black phosphorus nanosheet, the source metal electrode is grounded, and the drain metal electrode is connected to the current source load and an external voltage source; the external voltage source is used to input a voltage to the drain metal electrode so that the black phosphorus nanosheet forms a conductive channel to directionally drive the carriers in the layered black phosphorus to move; it can effectively improve the flexibility of signal processing, so as to meet the design requirements of an electronic system with low hardware consumption and multiple operating frequency bands. The present invention utilizes the Stark effect of black phosphorus to develop a signal amplifier with adjustable performance and flexible modes, making up for the deficiency of poor tunability of existing black phosphorus amplifiers.

[0040] The device provided with the tunable signal amplifier provided by the present invention will be described below. The device provided with the tunable signal amplifier described below can be mutually corresponded and referred to the tunable signal amplifier described above. The device provided with the tunable signal amplifier of the present invention specifically includes the following parts: a signal input module, a tunable signal amplifier, and a signal output module; the signal input module, the tunable signal amplifier, and the signal output module are connected; the signal input module is used to input a target signal into the tunable signal amplifier; wherein, the target signal is a voltage signal; the tunable signal amplifier is used to obtain the target signal input by the signal input module, amplify the target signal, and obtain the amplified processed target signal; and send the amplified target signal to the signal output module; the signal output module is used to obtain the amplified processed target signal sent by the tunable signal amplifier and output the amplified processed target signal.

[0041] The tunable signal amplifier includes a black phosphorus transistor and a current source load. The black phosphorus transistor includes a back gate electrode, a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer, and a top gate electrode; wherein, the back gate electrode is used to apply a back gate voltage through a voltage source, and the top gate electrode is used to apply a top gate voltage through a voltage source, so as to form a vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer, the black phosphorus nanosheet, and the gate dielectric insulating layer are sequentially arranged in the vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer and the gate dielectric insulating layer are respectively used to isolate the gate and control the conductive state of the channel, and the gate includes the top gate electrode and the back gate electrode; the black phosphorus nanosheet has a double-gate structure and is used to change the bandgap of the layered black phosphorus in the black phosphorus nanosheet under the action of the vertical electric field, so as to adjust the carrier mobility and the intrinsic resistance in the black phosphorus nanosheet, so as to adjust the carrier mobility and the intrinsic resistance in the black phosphorus nanosheet, so as to realize a black phosphorus amplifier with adjustable gain and bandwidth, and output an amplified processed signal; wherein, the magnitude of the gain corresponds to the amplification factor of the tunable signal amplifier, and the magnitude of the bandwidth corresponds to the processing signal frequency of the tunable signal amplifier; the source metal electrode and the drain metal electrode are respectively arranged at two opposite ends of the black phosphorus nanosheet, the source metal electrode is grounded, and the drain metal electrode is connected to the current source load and an external voltage source; the external voltage source is used to input a voltage to the drain metal electrode so that the black phosphorus nanosheet forms a conductive channel to directionally drive the carriers in the layered black phosphorus to move.

[0042] It should be noted that the device provided with the tunable signal amplifier of the present invention can be an audio device, a communication device, or an instrument device. When the device provided with the tunable signal amplifier is an audio device, the target signal can be a voltage signal corresponding to an audio signal (i.e., Figure 2 in ). The device provided with the tunable signal amplifier provided by the present invention can realize the tunability of audio signal amplification regulation through the tunable signal amplifier, effectively improving the flexibility of audio signal processing, thereby meeting the design requirements of audio devices with low hardware consumption and multiple working frequency bands.

[0043] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A tunable signal amplifier, characterized in that: include: Black phosphorus transistor and current source load; The black phosphorus transistor comprises a silicon back gate electrode, a substrate insulating layer, a black phosphorus nanosheet, a source metal electrode, a drain metal electrode, a gate dielectric insulating layer and a top gate electrode; The back gate electrode is used to apply a back gate voltage through a voltage source, and the top gate electrode is used to apply a top gate voltage through a voltage source, so that a vertical electric field is formed between the back gate electrode and the top gate electrode; The substrate insulating layer, the black phosphorus nanosheets and the gate dielectric insulating layer are sequentially arranged in the vertical electric field between the back gate electrode and the top gate electrode; the substrate insulating layer and the gate dielectric insulating layer are respectively used to isolate the gate and control the conductive state of the channel, and the gate includes a top gate electrode and a back gate electrode; The black phosphorus transistor has a dual-gate structure, which is used to adjust the carrier mobility and intrinsic resistance in the black phosphorus nanosheet by changing the band gap of the layered black phosphorus in the black phosphorus nanosheet under the action of a vertical electric field, so as to realize a black phosphorus amplifier with adjustable gain and bandwidth, and output a processed signal; wherein the size of the gain corresponds to the amplification factor of the tunable signal amplifier, and the size of the bandwidth corresponds to the processing signal frequency of the tunable signal amplifier; the source metal electrode and the drain metal electrode are respectively arranged at the corresponding two ends of the black phosphorus nanosheet, the source metal electrode is grounded, and the drain metal electrode is connected to the current source load and an external voltage source; the external voltage source is used to input a voltage to the drain metal electrode so that the black phosphorus nanosheet forms a conductive channel, so as to drive the carriers in the layered black phosphorus to move in a directionally driven manner.

2. The tunable signal amplifier according to claim 1, characterized in that: The black phosphorus nanosheet is a black phosphorus nanofilm obtained by mechanically exfoliating a black phosphorus bulk single crystal by using a blue film tape.

3. The tunable signal amplifier according to claim 1, characterized in that: The gate dielectric insulating layer is an Al2O3 insulating film formed by atomic layer deposition, with a film thickness of 15nm-30nm, and is used to form a gate dielectric layer for channel control.

4. The tunable signal amplifier according to claim 1, characterized in that: The top gate electrode is formed by laser direct writing equipment or electron beam lithography, and metal is deposited by thermal evaporation equipment or electron beam evaporation equipment to form the top gate electrode.

5. The tunable signal amplifier according to claim 1, characterized in that: The source metal electrode and the drain metal electrode are formed by electron beam lithography, and the contact electrode is formed by depositing metal by thermal evaporation equipment or electron beam evaporation equipment.

6. The tunable signal amplifier according to claim 1, characterized in that: The current source load is a current source with a current of 15 μA and an internal resistance of 100 MΩ, which is used to ensure that the output resistance is only determined by the output resistance of the black phosphorus transistor.

7. The tunable signal amplifier according to claim 1, characterized in that: The substrate is a P-type silicon substrate.

8. The tunable signal amplifier according to claim 1, characterized in that: The thickness of the black phosphorus nanosheet is 20 nm.

9. The tunable signal amplifier according to claim 1, characterized in that: The top gate electrode is an Al electrode with a thickness ranging from 30nm to 50nm.

10. A device provided with a tunable signal amplifier, characterized in that: include: A signal input module, a tunable signal amplifier, and a signal output module; the signal input module, the tunable signal amplifier, and the signal output module are connected; The signal input module is used to input the target signal into the tunable signal amplifier; wherein the target signal is a voltage signal; The tunable signal amplifier is used to obtain the target signal input by the signal input module, and amplify the target signal to obtain the amplified target signal; and send the amplified target signal to the signal output module; The signal output module is used to obtain the amplified target signal sent by the tunable signal amplifier and output the amplified target signal.

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