Preparation method of novel OGM product

Abstract

The invention discloses a preparation method of a novel OGM product. The preparation method comprises the following steps: 1) using glass as a carrier; 2) coating a black BM material on the glass carrier, and generating a pattern; 3) coating a first layer of insulating material on the BM pattern layer, and generating a pattern; (4) preparing a first metal conducting layer on the first insulating layer, and making a metal grid circuit in an exposure and development mode of a photoetching machine; 5) coating a second layer of insulating material on the first metal pattern layer, and generating a pattern; (6) preparing a second metal conducting layer on the second insulating material layer, and making a metal grid circuit in an exposure and development mode of the photoetching machine; and 7) coating a third layer of insulating material on the second metal conductive layer, and generating a pattern. Through a series of innovative designs, such as specific graphic design optimization and a metal reflectivity reduction process, the flash point problem is effectively solved, and the display performance and the product quality of the touch screen are improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of touch screens, and particularly relates to a preparation method for a new type of OGM product. Background Art

[0002] In the process of implementing the present invention, the inventors found that the prior art has at least the following problems:

[0003] In the current OGM structure, after the LCM screen or oncell screen of the back-end module is attached, the OGM structure node area will show a lighting phenomenon when the screen is lit. For the oncell screen, a flash point problem will occur at the position where the RGB pixel points coincide with the nodes. And due to the established design rules, moiré phenomena will also occur when the screen is lit.

[0004] CN117467951A - Production process of OGM product, discloses a production process of OGM product, including steps: S1, cleaning the substrate; S2, coating the OGM product; wherein, in step S2, when preparing the F-Mo layer, oxygen is transported to the target through multiple oxygen delivery pipelines, which also cannot solve the above technical problems. Summary of the Invention

[0005] The technical problem to be solved by the present invention is a preparation method for a new type of OGM product, which improves the display performance and product quality of the touch screen.

[0006] To solve the above technical problems, the technical solution adopted by the present invention is: a preparation method for a new type of OGM product, including the following steps:

[0007] 1) Using glass as a carrier;

[0008] 2) Coating a black BM material on the glass carrier and forming a pattern;

[0009] 3) Coating a first insulating material on the BM layer and forming a pattern;

[0010] 4) Preparing a first metal conductive layer on the first insulating layer, and making a metal grid circuit by means of exposure and development of a lithography machine;

[0011] 5) Coating a second insulating material on the first metal layer and forming a pattern;

[0012] 6) Preparing a second metal conductive layer on the second insulating material, and making a metal grid circuit by means of exposure and development of a lithography machine;

[0013] 7) Coating a third insulating material on the second metal conductive layer and forming a pattern.

[0014] In the above step 2), patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 3 μm.

[0015] In the above step 3), patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 5 μm.

[0016] In the above step 4), the line width of the metal grid line is 2 - 8 μm, and the metal resistance value is ≤ 0.4 Ω; a TX - direction channel is formed.

[0017] In the above step 5), patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 5 μm.

[0018] In the above step 6), the line width of the metal grid line is 2 - 8 μm, and the metal resistance value is ≤ 0.4 Ω; an RX - direction channel is formed.

[0019] In the above step 7), patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 5 μm.

[0020] The material of the metal conductive layer is MO / AL / MO.

[0021] The cross - nodes of the metal grid lines are in a "Z" shape.

[0022] One of the above technical solutions has the following advantages or beneficial effects. Through a series of innovative designs, such as specific pattern design optimization and metal reflectivity reduction process, the flash point problem is effectively solved, and the display performance and product quality of the touch screen are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the preparation method of the novel OGM product provided in the embodiment of the present invention;

[0024] Figure 2 For Figure 1 the schematic diagram of the preparation method of the novel OGM product; DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0026] Embodiment 1

[0027] Refer to Figures 1 - 2 , a preparation method of a novel OGM product, including the following steps:

[0028] 1) Use glass as the carrier;

[0029] 2) Coat a black BM material on the glass carrier and form a pattern;

[0030] 3) Coat a first insulating material on the BM layer and form a pattern;

[0031] 4) Prepare a first metal conductive layer on the first insulating layer, and make a metal grid circuit by means of exposure and development of a lithography machine;

[0032] 5) Coat a second insulating material on the first metal layer and form a pattern;

[0033] 6) Prepare a second metal conductive layer on the second insulating material, and make a metal grid circuit by means of exposure and development of a lithography machine;

[0034] 7) Coat a third insulating material on the second metal conductive layer and form a pattern.

[0035] In the above step 2), a pattern is formed by means of exposure and development of a lithography machine, and the thickness is 1 - 3 um (the black BM is used to replace the cover ink, with a precision far exceeding the past, and the current thickness can accurately meet the strict requirements for the OD value, providing a strong guarantee for the product quality).

[0036] In the above step 3), a pattern is formed by means of exposure and development of a lithography machine, and the thickness is 1 - 5 um (since the surface of the BM is granular, static electricity is extremely likely to be generated during the coating of the film layer. Therefore, it is very necessary to add an insulating OC on the BM. In this way, there will be no problem of static electricity injury during the subsequent production of the conductive layer. Moreover, appropriately increasing the thickness of the OC can significantly improve the ESD resistance level of the product).

[0037] In the above step 4), the line width of the metal grid circuit is 2 - 8 um (we choose the metal conductive layer because it has significant advantages compared with the ITO conductive layer. The metal conductive layer not only has a lower resistance, which can greatly improve the sensitivity, but also its width range is suitable for most products. When the line width is thicker, good conductivity can be ensured; when the line width is thinner, it helps to improve the moiré pattern and optimize the product performance in all aspects), and the metal resistance is ≤0.4 Ω; a TX direction channel is formed.

[0038] In the above step 5), a pattern is formed by means of exposure and development of a lithography machine, and the thickness is 1 - 5 um (since both the upper and lower metals are conductive materials, in order to avoid the risk of short circuit and isolate the electromagnetic interference between the upper and lower conductive layers, it is extremely crucial to add an insulating layer in the middle. During this process, as the insulating layer, the reasonable change of the thickness of the OC can effectively improve the ESD resistance level of the product and ensure the stable operation of the product).

[0039] In the above step 6), the line width of the metal grid circuit is 2 - 8 μm (we choose the metal conductive layer because it has significant advantages compared to the ITO conductive layer. The metal conductive layer not only has a lower resistance, which can greatly improve the sensitivity, but also its width range is suitable for most products. When the line width is relatively thick, good conductivity can be ensured; when the line width is relatively thin, it helps to improve moiré and optimize the product performance in all aspects), and the metal resistance is ≤ 0.4 Ω; a channel in the RX direction is formed.

[0040] In the above step 7), a pattern is generated by the method of exposure and development using a lithography machine, with a thickness of 1 - 5 μm (Setting the last insulating protection is of great significance. It can effectively block extreme environmental factors such as external water vapor, prevent it from eroding film layers such as metal, and greatly improve the reliability of the product. At the same time, by reasonably adjusting the OC thickness, the interference of the outside world on the metal channel signal can also be weakened, ensuring the stable and reliable performance of the product).

[0041] The material of the metal conductive layer is MO / AL / MO.

[0042] The cross nodes of the metal grid circuit are in a "Z" shape.

[0043] After adopting the above solution, through a series of innovative designs, such as specific graphic design optimization and the process of reducing the metal reflectivity, the flash point problem is effectively solved, and the display performance and product quality of the touch screen are improved.

[0044] Example 2

[0045] The technical solution of the present invention aims to solve problems such as node brightening, flash point, and moiré existing in the OGM structure by changing the graphic design and adjusting the manufacturing process. Specifically, by reducing the node area, the effect that the node is invisible and no flash point appears is achieved; at the same time, the moiré phenomenon is effectively eliminated by using disordered design. Among them, the node area is reduced to ≤ 100 μm 2 As an evaluation criterion, theoretically, the smaller the node area, the less obvious it is after being lit. The specific manufacturing solution is as follows:

[0046] 1. Use glass as the carrier;

[0047] 2. In the first process, a black BM material is coated on the glass carrier, and a pattern is generated by the method of exposure and development using a lithography machine, with a thickness of 1 - 3 μm (The black BM is used to replace the cover plate ink, and the precision is far beyond the past, and the current thickness can accurately meet the strict requirements for the OD value, providing a strong guarantee for the product quality).

[0048] 3. In the second process, a layer of insulating material is coated on the BM layer, and patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 5 μm (since the surface of BM is granular, static electricity is extremely likely to be generated during the coating of the film layer. Therefore, it is very necessary to add an insulating OC layer on the BM. In this way, the problem of static electricity injury will not occur during the subsequent production of the conductive layer. Moreover, appropriately increasing the thickness of the OC can significantly improve the ESD resistance level of the product).

[0049] 4. In the third process, a metal conductive layer is deposited on the insulating layer by magnetron sputtering, and metal grid lines are made by the exposure and development method of a lithography machine, with a line width of 2 - 8 μm (we choose the metal conductive layer because it has significant advantages compared with the ITO conductive layer. The metal conductive layer not only has a lower resistance value, which can greatly improve the sensitivity, but also its width range is suitable for most products. When the line width is relatively thick, good conductivity can be ensured; when the line width is relatively thin, it helps to improve moiré and optimize the product performance in all aspects), and the metal resistance forms a TX direction channel at ≤ 0.4 Ω / □.

[0050] 5. In the fourth process, a layer of insulating material is coated on the metal layer, and patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 5 μm (since both the upper and lower metals are conductive materials, in order to avoid the risk of short circuit and isolate the electromagnetic interference between the upper and lower conductive layers, it is extremely crucial to add an insulating layer in the middle. During this process, as the insulating layer, the reasonable change of the thickness of the OC can effectively improve the ESD resistance level of the product and ensure the stable operation of the product).

[0051] 6. In the fifth process, a metal conductive layer is deposited on the insulating layer by magnetron sputtering, and metal grid lines are made by the exposure and development method of a lithography machine, with a line width of 2 - 8 μm (we choose the metal conductive layer because it has significant advantages compared with the ITO conductive layer. The metal conductive layer not only has a lower resistance value, which can greatly improve the sensitivity, but also its width range is suitable for most products. When the line width is relatively thick, good conductivity can be ensured; when the line width is relatively thin, it helps to improve moiré and optimize the product performance in all aspects), and the metal resistance forms an RX direction channel at ≤ 0.4 Ω / □.

[0052] 7. In the sixth process, a layer of insulating material is coated on the metal layer, and patterns are generated by the exposure and development method of a lithography machine, with a thickness of 1 - 5 μm; (Setting the last insulating protection is of great significance. It can effectively block extreme environmental factors such as external water vapor, prevent it from eroding the metal and other film layers, and greatly improve the reliability of the product. At the same time, by reasonably adjusting the thickness of the OC, the interference of the outside world on the metal channel signal can also be weakened, ensuring the stable and reliable performance of the product).

[0053] ① Node area optimization: Changes are made to the node grid design. The grid of the conventional OGM uses a cross design with an X-shaped pattern, which is now changed to a Z-shaped design (see Figure 1 ), thereby reducing the node area.

[0054] ② Reducing metal reflectivity: The metals involved are MO / AL / MO. Through the coating process, the top and bottom MO layers react with oxygen to form oxidized MO, darkening the original MO layer and thus reducing the metal reflectivity.

[0055] ③ Pattern design to eliminate moiré patterns: An unordered design or Z-shaped design (see Figure 2 ) makes the pattern avoid the RGB bright spots under the screen, fundamentally eliminating the moiré pattern phenomenon.

[0056] ① Node grid design change: The grid of the conventional OGM is a cross design with an X-shaped pattern. This design is prone to problems such as node brightening after the LCM screen or oncell screen of the back-end module is attached. To solve this problem, the node grid design is changed to a Z-shaped design. The Z-shaped design can effectively adjust the node distribution, optimize the relative position relationship between the nodes and the screen pixels, reduce the node area, thereby reducing the visibility of the nodes when lit, and avoiding the flash point problem caused by the coincidence of the nodes and RGB points. At the same time, this design adjustment also helps to fundamentally solve the moiré pattern phenomenon caused by the regular overlap of the pattern and the screen pixels. By changing the geometric shape and arrangement of the pattern, the pattern avoids the RGB bright spots under the screen, destroying the conditions for generating moiré patterns and achieving the elimination of moiré patterns.

[0057] ② Introduction of unordered design: In addition to the Z-shaped design, the concept of unordered design is introduced. In the screen pattern layout, the traditional regular arrangement method is abandoned, and the pattern elements are randomly distributed on the premise of meeting the functional requirements. This unordered design further disrupts the potential periodic relationship between the pattern and the screen pixels, greatly reducing the probability of moiré patterns. For oncell screens, the unordered design and the Z-shaped design work together to better avoid the flash point problem at the coincidence position of the RGB points and the nodes, comprehensively improving the screen display effect.

[0058] II. Process for reducing metal reflectivity

[0059] ① Metal materials and process basics: The metals involved in the OGM structure are MO / AL / MO. It is processed through the coating process, which mainly targets the top and bottom MO layers.

[0060] ②Specific reaction process: During the coating process, conditions are created for the MO on the top layer and the bottom layer to react with oxygen. After the reaction of MO with oxygen, oxidized MO is formed. The optical properties of oxidized MO are different from those of the original MO, and its light reflection ability is significantly reduced compared to the original MO layer. This change effectively alleviates the problem of node brightening caused by the relatively high metal reflectivity. When the screen is lit, due to the reduced metal reflectivity, the node area is no longer as prone to brightening as before, reducing the interference of node brightening on the overall display effect of the screen and improving the uniformity and aesthetics of the screen display.

[0061] After adopting the above solution, through a series of innovative designs, such as specific graphic design optimization and the process of reducing metal reflectivity, the flash point problem is effectively solved, and the display performance and product quality of the touch screen are improved.

[0062] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by terms such as "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inner", "front", "center", "both ends", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0063] In the present invention, unless otherwise clearly specified and limited, terms such as "installation", "setting", "connection", "fixation", "swivel connection", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. Unless otherwise clearly limited, for those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a novel OGM product, characterized in that: The steps include: 1) Use glass as carrier; 2) coating a black BM material on a glass carrier and generating a pattern; 3) Apply the first layer of insulating material on the BM layer and generate a pattern; 4) preparing a first metal conductive layer on the first insulating layer, and making a metal grid circuit by exposure and development of a photolithography machine; 5) Coating a second layer of insulating material on the first metal layer and generating a pattern; 6) preparing a second metal conductive layer on the second insulating material layer, and making a metal grid circuit by exposure and development of a photolithography machine; 7) Coating a third layer of insulating material on the second metal conductive layer and generating a pattern.

2. The method for preparing the novel OGM product according to claim 1, characterized in that: In the above step 2), a pattern is generated by exposure and development using a photolithography machine, with a thickness of 1 to 3 um.

3. The method for preparing the novel OGM product according to claim 2, characterized in that: In the above step 3), a pattern is generated by exposure and development using a photolithography machine, with a thickness of 1 to 5 um.

4. The method for preparing the novel OGM product according to claim 3, characterized in that: In the above step 4), the line width of the metal grid line is 2 to 8 um, and the metal resistance is ≤ 0.4Ω; a TX direction channel is formed.

5. The method for preparing the novel OGM product according to claim 4, characterized in that: In the above step 5), a pattern is generated by exposure and development using a photolithography machine, with a thickness of 1 to 5 um.

6. The method for preparing the novel OGM product according to claim 5, characterized in that: In the above step 6), the line width of the metal grid line is 2-8 um, and the metal resistance is ≤0.4Ω; forming an RX direction channel.

7. The method for preparing the novel OGM product according to claim 6, characterized in that: In the above step 7), a pattern is generated by exposure and development using a photolithography machine, with a thickness of 1 to 5 um.

8. The method for preparing the novel OGM product according to claim 7, characterized in that: The material of the metal conductive layer is MO / AL / MO.

9. The method for preparing the novel OGM product according to claim 8, characterized in that: The intersection nodes of the metal grid lines are in a "Z" shape.

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