Magnetic memory device and manufacturing method thereof

Abstract

The invention discloses a magnetic memory device and a manufacturing method thereof. The magnetic memory device includes a plurality of vertical spin-orbit devices and a plurality of leakage magnetic field applying layers. Each of the vertical spin-orbit devices includes at least a first electrode, a second electrode, and a magnetic tunnel junction (MTJ). The magnetic tunneling junction is disposed on the first electrode, and the second electrode is disposed on the magnetic tunneling junction. The leakage magnetic field applying layers are arranged among the plurality of vertical spin-orbit devices, and each leakage magnetic field applying layer horizontally extends between the first electrode and the second electrode.

Description

Technical Field

[0001] The present invention relates to a Magnetic Random Access Memory (MRAM) technology, and more particularly to a magnetic memory device and a manufacturing method thereof. Background Art

[0002] Magnetic memories have the advantages of high speed, low power consumption, high density, non-volatility, and almost unlimited read / write capabilities. The mechanism of a magnetic tunneling junction device that uses the Spin-Orbit-Torque (SOT) mechanism for reading and writing is as follows: when a current is applied to a heavy metal layer, SOT is generated at the interface, and the resultant torque with the externally applied magnetic field H will generate a flipping force on the magnetic moment perpendicular to the film plane within the ferromagnetic material at the interface, which is regarded as a new generation of memory read / write mechanism.

[0003] However, since memory operation requires an externally applied magnetic field, additional devices or power consumption are needed. Currently, there have been studies on stacking various magnetic functional layers in SOT magnetic memory devices to replace the externally applied magnetic field, but this will increase the overall resistance of the device, resulting in an increase in the operating current, which is not conducive to the development of high-performance magnetic memories. Summary of the Invention

[0004] The present invention is directed to a magnetic memory device and a manufacturing method thereof, which can achieve SOT flipping without using an externally applied magnetic field and can reduce the operating current of the device.

[0005] According to multiple embodiments of the present invention, a magnetic memory device is provided, which includes a plurality of vertical spin-orbit devices and a plurality of stray field application layers. Each vertical spin-orbit device includes at least a first electrode, a second electrode, and a magnetic tunnel junction (MTJ). The magnetic tunnel junction is disposed on the first electrode, and the second electrode is disposed on the magnetic tunnel junction. The stray field application layer is disposed between the plurality of vertical spin-orbit devices, and each stray field application layer horizontally extends between the first electrode and the second electrode.

[0006] According to multiple embodiments of the present invention, a manufacturing method of a magnetic memory device is further provided, which includes forming a first electrode; forming a magnetic tunnel junction (MTJ) on the first electrode; forming a dielectric layer that simultaneously covers the first electrode and the magnetic tunnel junction; respectively forming a plurality of stray field application layers on the dielectric layers on both sides of the magnetic tunnel junction; and forming a second electrode electrically connected to the magnetic tunnel junction on the stray field application layer.

[0007] Based on the above, in the device and method of the present invention, a leakage magnetic field application layer is provided on both sides of the MTJ. Therefore, SOT flipping can be performed without an external magnetic field. Since the position of the leakage magnetic field application layer does not overlap with the MTJ stack, the write current of the magnetic memory device can be reduced, and the resistance of the read current is not increased.

[0008] To make the above features of the present invention more obvious and understandable, specific embodiments are given below and described in detail with reference to the accompanying drawings as follows. Description of the Drawings

[0009] Figure 1 is a schematic cross-sectional view of a magnetic memory device according to a first embodiment of the present invention;

[0010] Figure 2A is Figure 1 a schematic diagram of the magnetic memory device;

[0011] Figure 2B is Figure 2A a plan view of the magnetic memory device;

[0012] Figures 3A to 3D is a schematic cross-sectional view of a manufacturing process of a magnetic memory device according to a second embodiment of the present invention;

[0013] Figure 4 is a schematic cross-sectional view of a magnetic memory device according to a third embodiment of the present invention;

[0014] Figure 5A is Figure 4 a schematic diagram of the magnetic memory device;

[0015] Figure 5B is Figure 5A a plan view of the magnetic memory device;

[0016] Figures 6A to 6D is a schematic cross-sectional view of a manufacturing process of a magnetic memory device according to a fourth embodiment of the present invention;

[0017] Among them, reference numerals:

[0018] 100, 400: magnetic memory device;

[0019] 102, 402: leakage magnetic field application layer;

[0020] 104, 404: ferromagnetic layer;

[0021] 106, 406: antiferromagnetic layer;

[0022] 108, 300, 300’, 600, 600’: dielectric layer;

[0023] 110: free layer

[0024] 112: Barrier layer;

[0025] 114: Fixed layer;

[0026] 116: Metal covering layer;

[0027] 118: Insulating layer;

[0028] 120: Electrode channel;

[0029] 302, 302', 602, 602': Top cover layer;

[0030] 402a: Extension part;

[0031] d: Horizontal distance;

[0032] E1: First electrode;

[0033] E2: Second electrode;

[0034] h: Vertical distance;

[0035] m1, E1b, E2b: Lower surface;

[0036] m2, E1a: Upper surface;

[0037] MM1, MM2: Magnetic moment;

[0038] MTJ: Magnetic tunneling junction;

[0039] S: Spacing;

[0040] SF: Stray magnetic field;

[0041] SW: Side wall;

[0042] VM: Vertical spin-orbit device;

[0043] θ: Angle. Detailed implementation manners

[0044] Figure 1 is a cross-sectional schematic view of a magnetic memory device according to a first embodiment of the present invention. Figure 2A is Figure 1 a simplified diagram of the magnetic memory device. Figure 2B is Figure 2A a plan view of the magnetic memory device, in which some components are omitted.

[0045] Please first refer to Figure 1 and Figure 2A , the magnetic memory device 100 of the first embodiment includes a plurality of vertical spin-orbit devices VM and a plurality of stray field application layers 102, whereFigure 1 Shows the detailed structure of a single vertical spin-orbit device VM and the magnetic tunnel junction MTJ therein, Figure 2A while Figure 2 shows two vertical spin-orbit devices VM but simply represents the position of the magnetic tunnel junction MTJ in a rectangular shape. The vertical spin-orbit device VM can save more than about 50% of the area compared to a general horizontal spin-orbit device.

[0046] In Figure 1 , the vertical spin-orbit device VM includes a first electrode E1, a magnetic tunnel junction MTJ, and a second electrode E2. The magnetic tunnel junction MTJ is disposed on the first electrode E1, and the second electrode E2 is disposed on the magnetic tunnel junction MTJ. In some embodiments, the material of the first electrode E1 may include but is not limited to tantalum (Ta), platinum (Pt), tungsten (W), titanium (Ti), or a single-layer or multi-layer structure of a combination of the foregoing. In some embodiments, the material of the second electrode E2 is, for example but not limited to, copper (Cu), platinum (Pt), tungsten (W), or a combination of the foregoing. The leakage magnetic field application layer 102 is disposed between the vertical spin-orbit devices VM, and each leakage magnetic field application layer 102 extends horizontally between the first electrode E1 and the second electrode E2.

[0047] In the magnetic memory device 100 of the first embodiment, each leakage magnetic field application layer 102 may include a ferromagnetic layer 104 and an antiferromagnetic layer 106. The ferromagnetic layer 104 extends horizontally between the first electrode E1 and the second electrode E2, and the antiferromagnetic layer 106 also extends horizontally between the first electrode E1 and the second electrode E2. The magnetic moment MM1 of the ferromagnetic layer 104 and the magnetic moment MM2 of the antiferromagnetic layer 106 are shown in Figure 1 , wherein the antiferromagnetic layer 106 defines the direction of the magnetic moment MM1 of the underlying ferromagnetic layer 104. Therefore, a stable and sufficient leakage magnetic field SF is formed between the leakage magnetic field application layers 102, and the SOT flip operation can be achieved without an external magnetic field through the leakage magnetic field SF, thus reducing power consumption. In order to enable the antiferromagnetic layer 106 to define the magnetic moment direction, the antiferromagnetic layer 106 can be subjected to a magnetic annealing treatment at a predetermined temperature to fix the direction of the magnetic moment MM1 generated by the ferromagnetic layer 104 through the antiferromagnetic layer 106. In some embodiments, the material of the ferromagnetic layer 104 described above may be iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), dysprosium (Dy), boron (B), or an alloy of the foregoing elements. In some embodiments, the material of the antiferromagnetic layer 106 described above may be platinum manganese (PtMn), manganese oxide (MnO), iridium manganese (IrMn), chromium oxide (CrO), or a combination of the foregoing. In one embodiment, the vertical distance h between the leakage magnetic field application layer 102 and the first electrode E1 is, for example, between 200 angstroms ~600 angstroms However, the present invention is not limited thereto; the vertical distance h may be increased or decreased according to the dimensions, materials, and characteristics of the respective components in the magnetic memory device 100. In one embodiment, from the perspective of magnetic field stability, the horizontal distance d between the leakage magnetic field application layer 102 and the magnetic tunneling junction MTJ is, for example, between 200 angstroms and 600 angstroms However, the present invention is not limited thereto. In some embodiments, the above horizontal distance d is greater than the above vertical distance h.

[0048] Please continue to refer to Figure 1 , the magnetic memory device 100 further has a dielectric layer 108, which is interposed between the first electrode E1 and the second electrode E2 and separates the leakage magnetic field application layer 102 and the magnetic tunneling junction MTJ. The above magnetic tunneling junction MTJ may include a free layer 110, a barrier layer 112, a pinned layer 114, and a metal capping layer 116. The barrier layer 112 is formed on the free layer 110, the pinned layer 114 is formed on the barrier layer 112, and the metal capping layer 116 is formed on the pinned layer 114. In the first embodiment, the lower surface m1 of the magnetic tunneling junction MTJ adheres to the upper surface E1a of the first electrode E1, and the upper surface m2 of the magnetic tunneling junction MTJ adheres to the lower surface E2b of the second electrode E2. However, the present invention is not limited thereto; in another embodiment, other functional layers may be provided between the lower surface m1 of the magnetic tunneling junction MTJ and the first electrode E1; or, other functional layers may be provided between the upper surface m2 of the magnetic tunneling junction MTJ and the second electrode E2.

[0049] In some embodiments, the material of the above free layer 110 is a ferromagnetic material with perpendicular magnetic anisotropy to read data by using the magnetic moment reversal in the magnetic film layer. Therefore, the ferromagnetic materials of the free layer 110 may include but are not limited to iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), dysprosium (Dy), boron (B), or alloys of the foregoing elements. Examples include CoFeB, NiFe, FeB, etc. The free layer 110 may be a single-layer structure or a multi-layer structure. In one embodiment, if the free layer is composed of multiple ferromagnetic materials, the multiple ferromagnetic materials may be a composite layer structure composed of elements such as cobalt (Co) / platinum (Pt), cobalt (Co) / nickel (Ni), cobalt (Co) / palladium (Pd), etc. However, the present invention is not limited thereto.

[0050] In some embodiments, the above barrier layer 112 is an insulating material that satisfies the magnetic tunneling condition at a specific thickness. These insulating materials may be magnesium oxide, aluminum oxide, or a combination of the foregoing.

[0051] In some embodiments, the aforementioned fixed layer 114 refers to a multi-layer structure that is not changed by an operating magnetic field or other conditions. In one embodiment, the fixed layer 114 may be composed of two ferromagnetic materials (not shown) with opposite magnetic moment vectors and perpendicular to the film surface, and a non-magnetic metal (not shown) sandwiched therebetween. In one embodiment, the two ferromagnetic materials have perpendicular anisotropy and may be a single-layer or multi-layer structure. The ferromagnetic materials that can be used can refer to the ferromagnetic materials of the free layer 110. As for the non-magnetic metal sandwiched in the middle, it can be ruthenium (Ru), copper (Cu), iridium (Ir), tantalum (Ta), platinum (Pt), tungsten (W), magnesium (Mg), etc.

[0052] In some embodiments, the material of the aforementioned metal capping layer 116 is, for example but not limited to, titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), tantalum (Ta), or a combination of the foregoing.

[0053] In addition, there is usually an insulating layer 118 and an electrode channel 120 formed in the insulating layer 118 below the first electrode E1. The lower surface E1b of the first electrode E1 can be in direct contact with the electrode channel 120, and a front-end circuit (not shown in the figure) can also be provided below the insulating layer 118 for application in various precision devices.

[0054] Please continue to refer to Figure 2A and Figure 2B , since the leakage magnetic field application layer 102 itself is not electrically connected to the first electrode E1, the magnetic tunneling junction MTJ, and the second electrode E2, two adjacent vertical spin-orbit devices VM can share one leakage magnetic field application layer 102. More specifically, in the structure of the magnetic tunneling junction MTJ, no other film layer for adjusting the magnetic moment of the free layer 110 needs to be inserted. Therefore, the overall height of the vertical spin-orbit device VM becomes lower, and the write current is thus reduced.

[0055] Figures 3A to 3D is a cross-sectional schematic diagram of a manufacturing process of a magnetic memory device according to the second embodiment of the present invention, where the same device symbols as those in the first embodiment are used to represent the same or similar parts and components, and the relevant content of the same or similar parts and components can also refer to the content of the first embodiment and will not be repeated.

[0056] Please refer to Figure 3A, the manufacturing method of the second embodiment may first form the first electrode E1. For example, the front-end circuit is first fabricated, and then the insulating layer 118 and the electrode channel 120 are formed. Then, a magnetic tunnel junction MTJ is formed on the first electrode E1. The method of forming the magnetic tunnel junction MTJ is, for example, depositing a stacked structure (not shown) on the first electrode E1, performing magnetic annealing in a direction perpendicular to the film plane on the aforementioned stacked structure, and then etching the stacked structure until the first electrode E1 is exposed. In one embodiment, the above-mentioned magnetic annealing in the direction perpendicular to the film plane can be carried out at a temperature between about 300 °C and about 400 °C for a duration of about 0.3 to 4 hours, and a magnetic field in the direction perpendicular to the film plane is applied simultaneously during this magnetic annealing to further increase the magnetic anisotropy in the vertical direction; during the aforementioned magnetic annealing, the magnetic field can be between about 1 tesla and 5 tesla. For the detailed structure of the above-mentioned magnetic tunnel junction MTJ, reference can be made to Figure 1 , or use a known magnetic tunnel junction MTJ. After that, a dielectric layer 300 is formed to cover both the first electrode E1 and the magnetic tunnel junction MTJ.

[0057] Then, please refer to Figure 3B , leakage magnetic field application layers 102 are respectively formed on the dielectric layer 300 on both sides of the magnetic tunnel junction MTJ. The method of forming the leakage magnetic field application layer 102 is, for example, first forming a ferromagnetic layer 104 on the dielectric layer 300, forming an antiferromagnetic layer 106 on the ferromagnetic layer 104, and then etching the antiferromagnetic layer 104 and the ferromagnetic layer 106 until the dielectric layer 300 is exposed. The materials of the ferromagnetic layer 104 and the antiferromagnetic layer 104 can be referred to those described in the first embodiment and will not be elaborated here. After that, a top cover layer 302 is formed to cover the leakage magnetic field application layer 102, where the top cover layer 302 is a dielectric material and can be the same or different from the dielectric layer 300.

[0058] Subsequently, please refer to Figure 3C , etch back Figure 3B the top cover layer 302 and the dielectric layer 300 to expose the upper surface m2 of the magnetic tunnel junction MTJ. The top surface of the etched-back top cover layer 302' and the topmost surface of the dielectric layer 300' will be flush with or slightly lower than the upper surface m2 of the magnetic tunnel junction MTJ.

[0059] Then, please refer to Figure 3D , a second electrode E2 electrically connected to the magnetic tunnel junction MTJ is formed on the leakage magnetic field application layer 102. In one embodiment, horizontal magnetic annealing can also be performed after forming the second electrode E2. The above-mentioned horizontal magnetic annealing can be carried out at a temperature between about 300 °C and about 400 °C for a duration of about 0.3 to 4 hours, and a magnetic field in the horizontal direction is applied simultaneously during this magnetic annealing to further increase the magnetic anisotropy in the horizontal direction; during the horizontal magnetic annealing, the applied magnetic field can be between about 1 tesla and 5 tesla.

[0060] Figure 4 FIG. 3 is a cross-sectional schematic view of a magnetic memory device according to a third embodiment of the present invention, in which the same or similar parts and components are denoted by the same device symbols as those in the first embodiment, and the relevant content of the same or similar parts and components can also be referred to the content of the first embodiment and will not be repeated here.

[0061] Please refer to Figure 4 , the difference between the magnetic memory device 400 of the third embodiment and that of the first embodiment is that it includes a plurality of vertical spin-orbit devices VM and a plurality of leakage magnetic field application layers 402. The ferromagnetic layer 404 and the antiferromagnetic layer 406 of the leakage magnetic field application layer 402, in addition to horizontally extending between the first electrode E1 and the second electrode E2, further include an extension portion 402a. The extension portion 402a is adjacent to the magnetic tunnel junction MTJ and extends upward into the second electrode E2. For example, the antiferromagnetic layer 406 is in direct contact with the lower surface E2b of the second electrode E2, and even the ferromagnetic layer 404 is also in direct contact with the lower surface E2b of the second electrode E2, but the present invention is not limited thereto.

[0062] In one embodiment, the angle θ between the direction in which the extension portion 402a extends upward into the second electrode E2 and the horizontal direction is greater than 50° and less than 80°, but the present invention is not limited thereto. In some embodiments, the horizontal distance d between the leakage magnetic field application layer 402 and the magnetic tunnel junction MTJ is, for example, between 200 Å and 600 Å , but the present invention is not limited thereto. In some embodiments, Figure 4 the horizontal distance d therein refers to the distance between the portion of the leakage magnetic field application layer 402 closest to the magnetic tunnel junction MTJ except for the extension portion 402a and the magnetic tunnel junction MTJ. In some embodiments, the vertical distance h between the leakage magnetic field application layer 402 and the first electrode E1 can be between 200 Å and 600 Å , but the present invention is not limited thereto. In some embodiments, the above-mentioned horizontal distance d is greater than the above-mentioned vertical distance h.

[0063] Figure 5A is Figure 4 a schematic diagram of the magnetic memory device, in which two vertical spin-orbit devices VM are shown, but the position of the magnetic tunnel junction MTJ is simply represented by a rectangle, and each leakage magnetic field application layer 402 horizontally extends between the first electrode E1 and the second electrode E2. Figure 5B is Figure 5A a plan view of the magnetic memory device, and only the first electrode E1, the magnetic tunnel junction MTJ, and the leakage magnetic field application layer 402 are shown.

[0064] Please also refer to Figure 5A and Figure 5B, since the extension 402a of the leakage magnetic field application layer 402 extends upward into the second electrode E2, the two leakage magnetic field application layers 402 between two adjacent vertical spin-orbit devices VM are separated from each other. In one embodiment, the distance S between the two separated leakage magnetic field application layers 402 is greater than 0.1 μm. However, the present invention is not limited thereto; according to Figure 4 the dimensions, materials, and characteristics of the respective components in the magnetic memory device 400, the distance S can be increased or decreased.

[0065] Figures 6A to 6D FIG. is a cross-sectional schematic view of a manufacturing process of a magnetic memory device according to a fourth embodiment of the present invention, in which the same or similar parts and components are denoted by the same device symbols as those in the third embodiment, and the relevant content of the same or similar parts and components can also be referred to the content of the third embodiment and will not be repeated here.

[0066] Please first refer to Figure 6A , in the manufacturing method of the fourth embodiment, the first electrode E1 can be formed first. For example, the front-end circuit is fabricated first, and then the insulating layer 118 and the electrode channel 120 are formed. Then, a magnetic tunnel junction MTJ is formed on the first electrode E1. The method of forming the magnetic tunnel junction MTJ is, for example, depositing a stacked structure (not shown in the figure) on the first electrode E1, performing magnetic annealing in a direction perpendicular to the film plane on the aforementioned stacked structure, and then etching the stacked structure until the first electrode E1 is exposed. The relevant description of the magnetic annealing in the direction perpendicular to the film plane can refer to the relevant description of the second embodiment and will not be repeated here. After that, a dielectric layer 600 is formed to cover both the first electrode E1 and the magnetic tunnel junction MTJ at the same time.

[0067] Next, please refer to Figure 6B , leakage magnetic field application layers 402 are respectively formed on the dielectric layer 600 on both sides of the magnetic tunnel junction MTJ. The method of forming the leakage magnetic field application layer 402 is, for example, first forming a ferromagnetic layer 404 on the dielectric layer 600, forming an antiferromagnetic layer 406 on the ferromagnetic layer 404, and then etching the antiferromagnetic layer 404 and the ferromagnetic layer 406 until the dielectric layer 600 is exposed, while leaving a part beside the sidewall SW of the magnetic tunnel junction MTJ as the extension 402a. The materials of the ferromagnetic layer 404 and the antiferromagnetic layer 404 can refer to the ferromagnetic layer 104 and the antiferromagnetic layer 104 in the first embodiment and will not be repeated here. After that, a top cover layer 602 is formed to cover the leakage magnetic field application layer 402. The top cover layer 602 is a dielectric material and can be the same or different from the dielectric layer 600.

[0068] Then, please refer to Figure 6C , back-etch Figure 6BThe top cover layer 602 and the dielectric layer 600 therein are etched to expose the upper surface m2 of the magnetic tunnel junction MTJ. After the back-etching, the top surfaces of the top cover layer 602' and the dielectric layer 600' will be flush with or slightly lower than the upper surface m2 of the magnetic tunnel junction MTJ.

[0069] After that, please refer to Figure 6D , a second electrode E2 electrically connected to the magnetic tunnel junction MTJ is formed on the leakage magnetic field application layer 402. In one embodiment, a horizontal magnetic annealing may be performed after the formation of the second electrode E2. The foregoing horizontal magnetic annealing can refer to the relevant description of the second embodiment and will not be elaborated here.

[0070] In summary, through the leakage magnetic field application layer horizontally extending between the two electrodes, the present invention can self-generate the magnetic field required to flip the free layer during SOT, achieving the effect of not requiring an additional magnetic field during reading and writing. Moreover, the leakage magnetic field application layers horizontally arranged on both sides of the magnetic tunnel junction do not increase the height of the magnetic memory device, so the write current of the magnetic memory device can be reduced without increasing the resistance of the read current, thereby reducing the operating power consumption.

[0071] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A magnetic memory device, characterized in that: include: A plurality of vertical spin-orbit devices, each of the vertical spin-orbit devices comprising: a first electrode; A magnetic tunneling junction is disposed on the first electrode; and A second electrode is disposed on the magnetic tunneling junction; and A plurality of leakage magnetic field application layers are arranged between the plurality of vertical spin-orbit devices, and each of the leakage magnetic field application layers extends horizontally between the first electrode and the second electrode.

2. The magnetic memory device according to claim 1, wherein: Each of the leakage magnetic field application layers includes a ferromagnetic layer and an antiferromagnetic layer. The ferromagnetic layer extends horizontally between the first electrode and the second electrode, and the antiferromagnetic layer extends horizontally between the first electrode and the second electrode.

3. The magnetic memory device according to claim 1, wherein: The vertical distance between the leakage magnetic field application layer and the first electrode is between 200 angstroms and 600 angstroms.

4. The magnetic memory device according to claim 1, wherein: The horizontal distance between the leakage magnetic field application layer and the magnetic tunneling junction is between 200 angstroms and 600 angstroms.

5. The magnetic memory device according to claim 1, wherein: A horizontal distance between the leakage magnetic field application layer and the first electrode is greater than a vertical distance between the leakage magnetic field application layer and the first electrode.

6. The magnetic memory device according to claim 1, wherein: Two adjacent ones of the plurality of vertical spin-orbit devices share one of the plurality of leakage magnetic field application layers.

7. The magnetic memory device according to claim 1, wherein: Each of the leakage magnetic field application layers includes an extension portion, which is adjacent to the magnetic tunneling junction and extends upward into the second electrode.

8. The magnetic memory device according to claim 7, wherein: An angle between a direction in which the extension portion extends upward to the second electrode and a horizontal direction is greater than 50° and less than 80°.

9. The magnetic memory device according to claim 8, wherein: Between two adjacent ones of the plurality of vertical spin-orbit devices are two leakage magnetic field application layers separated from each other.

10. The magnetic memory device according to claim 9, wherein: The distance between the two leakage magnetic field application layers separated from each other is greater than 0.1 μm.

11. The magnetic memory device according to claim 1, wherein: The magnetic tunneling junction comprises: Free layer; a barrier layer formed on the free layer; a fixed layer formed on the barrier layer; and A metal covering layer is formed on the fixed layer.

12. The magnetic memory device according to claim 1, wherein: The lower surface of the magnetic tunneling junction is attached to the upper surface of the first electrode, and the upper surface of the magnetic tunneling junction is attached to the lower surface of the second electrode.

13. The magnetic memory device according to claim 1, wherein: The invention also includes a dielectric layer disposed between the first electrode and the second electrode and separating the magnetic tunneling junctions in the plurality of vertical spin-orbit devices from the plurality of leakage magnetic field application layers.

14. A method for manufacturing a magnetic memory device, characterized in that: include: forming a first electrode; forming a magnetic tunneling junction on the first electrode; forming a dielectric layer to cover the first electrode and the magnetic tunneling junction; forming a plurality of leakage magnetic field application layers respectively in the dielectric layer on both sides of the magnetic tunneling junction; as well as A second electrode electrically connected to the magnetic tunneling junction is formed on the plurality of leakage magnetic field application layers.

15. The method for manufacturing a magnetic memory device according to claim 14, wherein: The method of forming the magnetic tunneling junction includes: depositing a stacked structure on the first electrode; Performing magnetic annealing on the stacked structure in a direction perpendicular to the film surface; and The stack structure is etched until the first electrode is exposed.

16. The method for manufacturing a magnetic memory device according to claim 14, wherein: Each of the leakage magnetic field application layers includes an extension portion formed beside a side wall of the magnetic tunneling junction.

17. The method for manufacturing a magnetic memory device according to claim 14, wherein: The method of forming the plurality of leakage magnetic field application layers includes: forming a ferromagnetic layer on the dielectric layer; forming an antiferromagnetic layer on the ferromagnetic layer; and The antiferromagnetic layer and the ferromagnetic layer are etched until the dielectric layer is exposed.

18. The method for manufacturing a magnetic memory device according to claim 14, wherein: Before forming the second electrode, the method further includes: forming a cap layer to cover the plurality of leakage magnetic field application layers; and The cap layer and the dielectric layer are etched back to expose the upper surface of the magnetic tunneling junction.

19. The method for manufacturing a magnetic memory device according to claim 14, wherein: After forming the second electrode, the method further includes performing horizontal magnetic annealing.

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