Optoelectronic device and related manufacturing method

Abstract

The invention mainly relates to an optoelectronic device (1) comprising: a stack structure (11) comprising: i. A plurality of light emitting diodes (111) arranged at a distance from one another, and ii. A plurality of electrically conductive terminals (112) arranged between the diodes; a light confinement layer (12) extending over the stack structure, comprising reflective walls (121) defining a space (10) located on the right side of each diode therebetween; the device is such that the confinement layer further comprises porous alumina in at least one of said spaces (10), preferably in at least two of said spaces, even in each of said spaces, with at least two open pores (1221) on a first face (12) of the confinement layer opposite the stack structure. According to the photoelectric device provided by the invention, the optical crosstalk phenomenon is obviously reduced.

Description

Technical Field

[0001] The present invention relates to an optoelectronic device intended to equip a display screen or an image projection system. The present invention also relates to a method for manufacturing such an optoelectronic device. Background Art

[0002] There is a known optoelectronic device including a matrix of light-emitting diodes having an emission surface, on which is at least partially coated a light color converter. Such an optoelectronic device can form a display screen or an image projection system including a matrix of light pixels of different colors.

[0003] The light-emitting diodes can be formed based on semiconductor materials composed of elements from columns III and V of the periodic table, such as III-V compounds, in particular gallium nitride (GaN), indium gallium nitride (InGaN) or aluminum gallium nitride (AlGaN). They are arranged to form a matrix of light-emitting diodes having an emission surface through which the light radiation emitted by the light-emitting diodes is transmitted.

[0004] Thus, in terms of a display screen or an image projection system, the optoelectronic device can include a matrix of light pixels, each light pixel including one or more light-emitting diodes. In order for the light pixels to emit light of different colors, such as blue, green or red, the light-emitting diodes can be adapted to emit blue light, and some light pixels can be connected to a light color converter (such as a photoluminescent terminal) which can absorb the blue light emitted by the light-emitting diodes and accordingly emit green or red light. The photoluminescent terminal is generally composed of a bonding matrix (hereinafter referred to as resin) composed of particles of a photoluminescent material such as yttrium aluminum garnet (YAG) and activated by cerium ions YAG:Ce.

[0005] The emission of the light-emitting diodes and the pixels has a certain angular directivity to some extent, and there will be an optical crosstalk phenomenon between the pixels or between the light-emitting diodes. In addition, using a photoluminescent terminal as introduced above, such light color converters will exacerbate these optical crosstalk phenomena.

[0006] To limit these phenomena, it has been proposed to add a black matrix between pixels, or more advantageously, add side mirrors (preferably made of aluminum or silver) to the sides of the photoluminescent terminals, thereby optically isolating the pixels. The manufacturing methods of the above-mentioned side mirrors are described in patent documents such as FR3101130 A1, FR3061358 A1, FR3083370 A1, FR3087580 A1, and US2023 / 0033031 A1. More specifically, these references propose different techniques for manufacturing cavities above blue pixels, filling the cavities with quantum dots (QDs) / resins with QDs, and converting the blue light emitted by the pixels into green or red light. However, these techniques require many technical steps (silica deposition, lithography, metal deposition by atomic layer deposition (ALD), etching, disassembly, alignment transfer, etc.), making their integration complex. It can also be learned from the article titled "Broadband visible-to-telecom wavelength germanium quantum dot photodetectors" published by Siontas et al. in APPLIED PHYSICS LETTERS 113, 251901 (2018) that QDs (quantum dots) suspended in a solvent are used to fill the cavities, and the solvent will evaporate (dry) secondarily, leaving only the QDs. More specifically, it discloses depositing CsPbBr3-based perovskite QDs diluted in dimethyl sulfoxide (or DMSO) solvent in the cavities of a nanoporous alumina matrix and subjecting it to secondary heating to evaporate the dimethyl sulfoxide.

[0007] In addition, Patent Document EP2708492B1 also introduces a mesoporous layer composed of J-aggregates and quantum dots, which can improve Forster resonance energy transfer (FRET), thereby improving the emissivity of components containing such a mesoporous layer.

[0008] The object of the present invention is to propose an optoelectronic device, especially compared with current optoelectronic devices, which is intended to be used for equipping display screens or improved image projection systems, especially to reduce the phenomenon of optical crosstalk.

[0009] The object of the present invention is to propose a device with a higher light conversion rate. As an alternative or complementary solution, the object of the present invention is to propose such a device whose manufacturing method is simpler than existing methods, or at least not more complex than the prior art.

[0010] Another object of the present invention is to provide an optoelectronic device and a related manufacturing method, which has a more direct technology integration compared with the prior art. Summary of the Invention

[0011] To achieve this object, according to a first aspect of the present invention, there is provided an optoelectronic device, comprising: a. A stacked structure, comprising: i. A plurality of P-N junction light-emitting diodes spaced apart from each other, and ii. A plurality of conductive terminals disposed between the light-emitting diodes, The conductive terminals are electrically isolated from at least one p-region or n-region of the P-N junction of the light-emitting diodes. b. A light confinement layer extending over the stacked structure, comprising reflective walls that define or delimit a space or volume therebetween, each space or volume being located to the right of at least one (preferably each) light-emitting diode.

[0012] The optoelectronic device is mainly such that the light confinement layer further comprises porous alumina in at least some of the said spaces, the porous alumina having at least two open pores on a first surface of the confinement layer in at least one of the at least some spaces, preferably at least two spaces, and even in each space, the first surface being opposite to the stacked structure.

[0013] In order to benefit from the light diffusion characteristics of (nano) porous alumina, the lateral dimension of the pores of the porous alumina is preferably between 1 nm and 500 nm, preferably between 50 nm and 400 nm. In addition, in order to benefit from the light diffusion characteristics of nano-porous alumina, as an alternative or supplement to the foregoing preferred embodiment, the pores of the porous alumina preferably have a periodicity of 200 nm to 700 nm. Therefore, it is advantageous to have several pores above at least one, preferably each, light-emitting diode, especially above each pixel, so as to maximize the optical performance of the optoelectronic device. In addition, the size of the pores is preferably larger than the size of the color conversion particles sliding in the pores, so that there is at least one color conversion particle in each pore.

[0014] According to an example of the first aspect of the present invention, the porous alumina has at least eight open pores on a first surface of the confinement layer opposite to the stacked structure in at least one of the at least some spaces, preferably at least two spaces, and even in each space. This can better extract the light emitted by the underlying light-emitting diodes.

[0015] According to an example of the first aspect of the present invention, different from the foregoing example, in at least one of the at least some spaces, preferably at least two spaces, and even in each space, of the porous alumina, there is at least one pore per 2×λ, where λ represents the wavelength to be extracted, and each space has at least four pores (in the case of 1 µm pixels).

[0016] According to an example of the first aspect of the present invention, on the first surface of the confinement layer opposite to the stacked structure, there is at least one, preferably each open pore, and its filling rate is substantially equal to 30%. The color conversion rate is thus optimized. More specifically, compared with the prior art, that is, there are Al2O3 pores above the light-emitting diode, a higher conversion rate is obtained in this case.

[0017] According to the second aspect of the present invention, a method for manufacturing an optoelectronic device is provided, and the method includes the following steps: a. Provide a stacked structure, including: i. A plurality of P-N junction light-emitting diodes kept at a certain distance from each other, and ii. A plurality of conductive terminals arranged between the light-emitting diodes, The conductive terminals are electrically isolated from at least one p-region or n-region of the P-N junction of the light-emitting diode, b. Form a light confinement layer on the stacked structure, and the layer is composed of reflective walls. Spaces or volumes are defined or delimited between the reflective walls, and each space or volume is located on the right side of at least one (preferably each) light-emitting diode. The specific method is: i. Deposit an aluminum base layer on the main surface of the stacked structure, configure the light-emitting diodes through this layer, and then ii. Perform an anodization treatment at least on the aluminum base layer outside the right region of the conductive terminals of the stacked structure.

[0018] The method mainly configures the anodization to form porous alumina in at least part of the spaces, that is, in at least one of the at least part of the spaces, preferably at least two spaces, and even in each space, there are at least two open pores on the first surface of the confinement layer opposite to the stacked structure.

[0019] According to the third aspect of the present invention, a display screen or system for projecting at least one image is provided, and the system includes at least one optoelectronic device as described above.

[0020] Thus, the advantageous anisotropic characteristics of anodized aluminum can be advantageously utilized. In fact, the optoelectronic device can include a space filled with porous alumina above each light-emitting diode, and the porous alumina includes pores having a high form factor. In this way, in particular, by increasing the diffusion of the light emitted by the underlying light-emitting diode in each pore and by thereby reducing the light crosstalk phenomenon, the confinement of light by the confinement layer is improved. In addition, especially when the pores of the porous alumina are filled with a light color conversion material, only the reflective walls can play a role in reducing the light crosstalk phenomenon.

[0021] Hereinafter, the optoelectronic device described above can be an intermediate product for manufacturing more advanced optoelectronic devices. In this context, we note that the porous alumina filling the space above each light-emitting diode has at least the advantage of being easy to etch deeply and anisotropically in this space.

[0022] By considering the above optoelectronic device as an intermediate product, it is also possible to further improve the optoelectronic device using this intermediate product, or to more easily manufacture an optoelectronic device that is more advanced compared to existing optoelectronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The objects, aims, features, and advantages of the present invention will be best presented by a detailed description of embodiments of the present invention, and the following drawings illustrate this embodiment: Figure 1 is a cross-sectional view of a part of an optoelectronic device or an intermediate product according to a first embodiment of the present invention, and this intermediate product can obtain an optoelectronic device according to Figure 2 the optoelectronic device shown in the second embodiment.

[0024] Figure 2 is a cross-sectional view of a part of an optoelectronic device made according to a second implementation of the present invention.

[0025] Figure 3 is a cross-sectional view of a part of an optoelectronic device or an intermediate product according to a third embodiment of the present invention, and this intermediate product can obtain an optoelectronic device according to Figure 4 the optoelectronic device shown in the fourth embodiment.

[0026] Figure 4 is a cross-sectional view of a part of an optoelectronic device made according to a fourth implementation of the present invention.

[0027] Figure 5 is according to Figure 1 a cross-sectional view of a part of an optoelectronic device designed according to a variant of the first embodiment of the present invention shown.

[0028] Figure 6 is according to Figure 2 a cross-sectional view of a part of an optoelectronic device made according to a variant of the second embodiment of the present invention shown.

[0029] Figure 7 is based on Figure 3 a cross-sectional view of a part of an optoelectronic device that is a variant of the third embodiment of the present invention as shown or a part of an intermediate product that is a variant of the fourth embodiment as shown. Figure 8 as shown

[0030] Figure 8 is based on Figure 3 a cross-sectional view of a part of an optoelectronic device designed according to a variant of the third embodiment of the present invention as shown.

[0031] Figures 9 to 12 schematically illustrates Figure 1 the steps of an embodiment of a method for manufacturing the optoelectronic device as shown.

[0032] Figures 13 to 15 schematically illustrates Figure 5 the steps of an embodiment of a method for manufacturing the optoelectronic device as shown.

[0033] Figure 16 is a cross-sectional view of a part of an optoelectronic device fabricated according to the fifth embodiment of the present invention.

[0034] Figure 17 represents a cross-sectional view of a part of an optoelectronic device (excluding the element labeled 2200 if necessary) according to the first variant of the fifth embodiment of the present invention as shown in FIG. 16. Figure 17 It can also be regarded as a step of a method for manufacturing the optoelectronic device as shown in FIG. 18 from the situation shown in FIG. 16.

[0035] Figure 18 is based on Figure 16 a cross-sectional view of a part of an optoelectronic device designed according to a variant of the fifth embodiment of the present invention as shown.

[0036] The accompanying drawings are given by way of example and do not limit the present invention. They constitute schematic diagrams of principles, aiming to facilitate the understanding of the present invention and do not necessarily conform to the scale of actual applications. In particular, the thicknesses and other dimensions of the different layers and other elements shown do not necessarily represent the actual situation and do not necessarily conform to the scale. Detailed Description of the Invention

[0037] Before starting to introduce the embodiments of the present invention in detail, the following will describe the optional features of the first aspect of the present invention, which can be used in combination or as alternatives: According to one example, each space is filled with porous alumina.

[0038] According to an example, the pores of the porous alumina form channels leading to the first face of the confinement layer. Thus, the pores of the porous alumina have a very high form factor, which further increases the diffusion of the light emitted by the underlying light-emitting diodes in each pore.

[0039] According to an example, the pores of the porous alumina mainly form channels along a direction perpendicular to the first surface of the confinement layer. The longitudinal dimension of the pores is preferably greater than its transverse dimension.

[0040] According to an example, the length Lp measured along the direction perpendicular to the first face of at least some of the pores (preferably all of the pores) is strictly less than the thickness E12 of the confinement layer, and preferably less than 2 nm; thus, there remains a few nanometers of alumina or aluminum at the bottom of the pores. The thickness E12 of the confinement layer can be between 500 nm and 10 µm or even thicker.

[0041] According to an example, the pores basically extend to the stack structure, and it is possible that they do not reach the stack structure, but in order not to lose optical efficiency, it is preferably to extend to the stack structure. Since the aluminum pillars above the contact points are not porous, the stability of the structure can be ensured, while benefiting from the higher form factor of the pores of the porous alumina, thus limiting the risk of peeling of the confinement layer from the stack structure.

[0042] According to an example, at least one pore (preferably each pore) has a form factor determined by the transverse dimension and / or the longitudinal dimension, the transverse dimension being basically between 40 nm and 800 nm, and the longitudinal dimension being basically between 500 nm and 10 µm or more, and the longitudinal dimension being preferably basically between 1 µm and 5 µm.

[0043] As a complement or alternative, the open pores on the first face of the confinement layer can occupy a surface that is basically equivalent to 30% of the total surface of the confinement layer, and / or, the distance between two adjacent open pores above at least one light-emitting diode, measured from their centers, is basically equivalent to the wavelength of the light emitted by the underlying light-emitting diode, which usually belongs to the blue light spectrum, for example, between 380 nm and 450 nm.

[0044] Therefore, the advantage of anodized alumina is that it can be configured and controlled in a known manner to ensure that the formed pores have specific dimensions, so that the pores can be filled, especially with different light color conversion materials.

[0045] According to an example, the stack structure further includes: a. a carrier substrate, b. A matrix of light-emitting structures extending on a carrier substrate, the light-emitting structure matrix including a plurality of light-emitting diodes extending on the carrier substrate through an interface (or bonding) layer, and a plurality of conductive terminals extending directly on the carrier substrate or through an electrical isolation wall. At least one (preferably each) light-emitting structure includes at least one light-emitting diode and at least a part of each adjacent conductive terminal. When necessary, the electrical isolation wall at least partially separates the light-emitting diode and each adjacent conductive terminal to avoid short-circuiting of at least one p-region or n-region of the P-N junction of the light-emitting diode.

[0046] According to one example, at least one (preferably each) light-emitting structure further includes at least one electrical isolation wall or insulating wall (which may be partial if necessary): a. Located between at least one conductive terminal and at least one adjacent light-emitting diode, and / or b. Located between at least one conductive terminal and the carrier substrate.

[0047] According to one example, at least one (preferably each) emission structure further includes dielectric walls, wherein a first dielectric wall extends between at least one (preferably each) conductive terminal and the interface layer, a second dielectric wall extends along at least a part of the side of each conductive terminal, and the first and second dielectric terminals are preferably connected to each other so that each conductive terminal is electrically isolated at its partial periphery.

[0048] According to one example, the carrier substrate includes at least one application-specific integrated circuit (ASIC), and at least one electrical connection terminal between the integrated circuit and at least one (e.g., a plurality of) light-emitting diodes. As a supplement or alternative, the stacked structure further includes an electrode layer based on a conductive transparent material (such as indium tin oxide (ITO)), which extends continuously between the plurality of light-emitting diodes and the conductive terminals (if necessary) on one hand, and between the light confinement layers on the other hand.

[0049] According to one example, at least one (possibly each) reflective wall is aluminum-based.

[0050] According to one example, at least a part of the outer periphery, especially the side surface, of at least one (preferably each) reflective wall is aluminum-based or is made of aluminum.

[0051] According to one example, at least one conductive terminal is aluminum-based, and when needed, at least one conductive terminal and a reflective wall located to the right of the at least one conductive terminal form a bulk volume. Thus, the conductive terminal can be made of the same material as the material constituting the reflective wall, which simplifies the device and its manufacturing method, especially avoiding technical steps such as depositing the conductive terminal by electrodeposition, etc., when the base material of the conductive terminal is a metal material other than aluminum, such as a copper-based material.

[0052] According to one example, at least one (possibly each) reflective wall is based on porous alumina and is based on a reflective material located in the pores of the porous alumina.

[0053] According to one example, the optoelectronic device further includes a photochromic conversion material located in the pores of the porous alumina, and the pores are located to the right of at least one light-emitting diode (preferably each light-emitting diode). In addition, the phenomenon of optical crosstalk can be effectively reduced. In this example, the photochromic conversion material is grafted onto the inner wall of the pores. Therefore, the interaction between the surface / conversion particles is strong, and the filling of the pores by the particles is also improved. In addition, grafting the conversion particles onto the inner wall of the pores can make the conversion particles better resist flow, thus ensuring that the optoelectronic device has better anti-aging performance.

[0054] According to one example, the photochromic conversion material is located in at least one (such as at least part of, preferably each) pore (or channel) formed by the porous alumina, and these pores can also be filled as needed.

[0055] According to one example, at least one or more spaces of the light confinement layer do not contain porous alumina.

[0056] According to the above examples, at least one (preferably each) space without porous alumina is filled with the photochromic conversion material. Therefore, optoelectronic devices with different configuration confinement layers can be designed according to the light-emitting diode or group of light-emitting diodes (the group of light-emitting diodes can especially form a pixel) under consideration. Therefore, the proposed optoelectronic device has the advantage of modularity in this regard.

[0057] According to one example, the photochromic conversion material includes at least one of the following materials: a. Quantum dots, b. J-aggregates, c. Phosphorescent (or fluorescent) nanoparticles, and d. Perovskites, As needed, it can be placed in a solution in a solvent or added to a resin. Advantageously, different photochromic conversion materials commonly used in the fields of display screens and other image projection systems can be inserted into the pores of the porous alumina, and thus can be used within the scope of the present invention.

[0058] According to one example, the light color conversion material filling at least one (preferably each) space without porous alumina is composed of at least one of the following materials: a. Quantum dots, and b. J-aggregates.

[0059] According to one example, the light-emitting diode is configured to emit light with a determined first wavelength, such as blue light, in a direction substantially parallel to the first surface of the confinement layer.

[0060] As a supplement or alternative, the light color conversion material is specifically used to convert the light emitted at the first wavelength into light with a second wavelength different from the first wavelength. For example, the first wavelength is in the blue light range, and the second wavelength is in one of the green light and red light ranges.

[0061] It can be understood that the optional features described above can be defined respectively. Compared with the first aspect of the present invention introduced above, the optoelectronic device of the present invention includes: a. A stacked structure, including: i. A plurality of light-emitting diodes kept at a certain distance from each other, and ii. A plurality of conductive terminals arranged between the light-emitting diodes, b. A light confinement layer extending on the stacked structure, including reflective walls, defining or delimiting a space or volume between the reflective walls, and each space or volume is located on the right side of the light-emitting diode.

[0062] The optional features of the second aspect of the present invention are elaborated below, and these features can be selectively combined or alternatively used: According to one example, the deposition thickness of the aluminum base layer is substantially between 500 nanometers and 10 micrometers, preferably substantially between 1 micrometer and 6 micrometers.

[0063] According to one example, the step of anodizing the aluminum base layer is configured such that porous alumina forms channels passing through the open pores on the first surface of the confinement layer, preferably such that the lateral dimension of at least one channel (such as each channel) is substantially between 40 nm and 800 nm and / or the longitudinal dimension is substantially between 500 nm and 10 µm, preferably substantially between 1 µm and 6 µm.

[0064] According to one example, the step of anodizing the aluminum base layer is configured such that the length Lp of at least some of the pores (or channels) (projected in the direction perpendicular to the first surface) is strictly greater than half of the thickness E12 of the confinement layer.

[0065] According to an example, the steps for anodizing the aluminum base layer are set as follows: the length Lp measured by the projection of at least some pores (or channels) in the direction perpendicular to the first surface is at most equal to (preferably strictly less than) the thickness of the aluminum base layer, for example, 2 nanometers. Thus, the risk of the constraint layer peeling off from the stacked structure is limited.

[0066] According to an example, the method further includes, after depositing the aluminum layer and before anodizing: a. Depositing a mask on the aluminum base layer region substantially located on the right side of the conductive terminal of the stacked structure, and the opening on the mask is located on the right side of the light-emitting diode, Anodizing the aluminum base layer through the opening of the deposited mask. The mask can be based on silicon oxide or silicon nitride (SiN).

[0067] According to an example, the step of providing the stacked structure includes depositing aluminum between the light-emitting diodes to form at least a part of the multiple conductive terminals of the stacked structure. In this way, the formation of the conductive terminals and the formation of the aluminum layer can be completed in the aluminum deposition step of the same technology.

[0068] According to an example, the manufacturing method further includes depositing a light color conversion material in the space of at least one (preferably some, such as each) pore in the porous alumina pores. In this example, before depositing the light color conversion material in the porous alumina pores, the conversion material and / or the inner wall of the pores are functionalized so as to graft to each other, for example, through surface - OH bonds, and if necessary, through alkaline chemical treatment or dry plasma treatment or by generating adsorbed ligands.

[0069] According to an example different from the foregoing example, the manufacturing method includes removing at least one (for example, part) of the porous alumina at the void by etching or the like, and filling at least one of the removed voids with a light color conversion material. In this way, both the known possibility of selectively etching porous alumina relative to aluminum and the anisotropy of aluminum anodization can be utilized, so as to obtain a flat reflective wall substantially perpendicular to the surface of the stacked structure through which light is emitted relative to the light-emitting diode.

[0070] According to an example, the anodizing step includes anodizing a part of the aluminum base layer located on the right side of at least one conductive terminal, and depositing a reflective material in the pores of the porous alumina located on the right side of the at least one conductive terminal.

[0071] A layer, wall, terminal or element based on material A (or "A-based") means a layer, wall, terminal or element composed of material A and other materials respectively.

[0072] The parameter "substantially equal to / greater than / less than" the given value means that the parameter is equal to / greater than / less than the given value, plus or minus 20%, or even 10% of that value. The parameter "substantially between" two given values means that the parameter is at least equal to the lowest given value, which is plus or minus 20%, or even 10% of that value, and at most equal to the highest given value, which is plus or minus 20%, or even 10% of that value.

[0073] Within the scope of the present invention, terms such as "on", "over", "suspended over", "covering", "beneath" and their synonyms do not necessarily imply "contact". Thus, for example, the transfer, application or deposition of a first layer on a second layer does not necessarily mean that the two layers are in direct contact, but rather that the first layer at least partially covers the second layer, either by directly contacting the second layer or by being separated from the second layer by at least one other layer or at least one other element.

[0074] When the size of an element is equal to or less than a few micrometers, it is referred to as a "micro" element. For example, a micro LED has a size equal to or less than a few micrometers.

[0075] In the following description, the thickness of a substrate, thin film or layer is generally measured along a direction perpendicular to the main extension plane of the substrate, thin film or layer.

[0076] With reference to Figures 1 to 8 and Figures 16 to 18 , a first aspect of the present invention relates to an optoelectronic device 1.

[0077] As shown in these figures, the optoelectronic device 1 according to the first aspect of the present invention includes a stacked structure 11 and a light confinement layer 12. More specifically, each of these figures is a partial cross-sectional view of the optoelectronic device 1 according to an embodiment of the first aspect of the present invention.

[0078] According to a second aspect, the present invention also relates to a method of manufacturing the optoelectronic device 1 according to the first aspect of the present invention. Figures 9 to 15 Different implementation steps of the method are illustrated.

[0079] A third aspect of the present invention relates to a display screen or a system for projecting at least one image, the display screen or system including at least one optoelectronic device 1 according to the first aspect of the present invention. The third aspect of the present invention is not illustrated in the figures, but it will be readily apparent to those skilled in the art how the optoelectronic device 1 according to the first aspect of the present invention can be integrated into a display screen or an image projection system.

[0080] Stacked structure 11 Figure 9 An embodiment of the stacked structure 11 is shown. In this case, it should be noted that Figure 9The provided description is structurally simplified. However, it is sufficient to illustrate the arrangement of the stacked structure 11 relative to other elements in various embodiments of the optoelectronic device 1. Those skilled in the art can know through common sense that there can be at least one, or even more complex structures for the stacked structure 11.

[0081] Specifically, referring to Figure 9 , the stacked structure 11 includes a plurality of light-emitting diodes 111 and a plurality of conductive terminals 112. There is a certain distance between the plurality of light-emitting diodes 111. The plurality of light-emitting diodes 111 are preferably arranged on the same layer of the optoelectronic device 1. The conductive terminals 112 of the plurality of light-emitting diodes 111 are arranged between the light-emitting diodes 111 and extend through the bonding layer 114, and the bonding layer 114 connects the P-N junction of each light-emitting diode 111 to the underlying substrate 113, preferably directly. The conductive terminals 112 are preferably arranged on the same layer of the optoelectronic device 1. Each conductive terminal 112 is preferably surrounded by the light-emitting diodes 111, and vice versa. For example, the shape of each terminal 112 and / or each light-emitting diode 111 is generally rectangular, parallelepiped or generally cylindrical. For example, the light-emitting diodes 111 and the conductive terminals 112 can be arranged in a checkerboard pattern, without requiring the light-emitting diodes 111 and the conductive terminals 112 to have the same size, especially the lateral size; in addition, the width dimension of the terminal 112 is illustrated in a non-limiting manner in the figure as being different from the width dimension of the light-emitting diode 111. In addition, it should be noted that in this case, the conductive terminal 112 can be a conductive metal, such as copper or aluminum.

[0082] Still referring to Figure 9 , each light-emitting diode 111 can be a light source for a sub-pixel. More specifically, each light-emitting diode 111 can include a first type of semiconductor layer 111a, a light-emitting layer 111b (also referred to as an active layer), and a second type of semiconductor layer 111c, which are stacked in sequence. The light-emitting layer 111b is sandwiched between the first type of semiconductor layer 111a and the second type of semiconductor layer 111c. For example, the first type 111a of semiconductor layer is a P-type semiconductor, the second type 111c of semiconductor layer is an N-type semiconductor, and the light-emitting layer 112 is preferably a multi-quantum well (MQW) layer, but this description is not limited to this example. Alternatively, the first type 111a of semiconductor layer can be an N-type semiconductor, and the second type 111c of semiconductor layer can be a P-type semiconductor.

[0083] The light-emitting diodes 111 are generally used to emit blue light, that is, radiation with a wavelength substantially between 430 nanometers and 480 nanometers.

[0084] More specifically, the stacked structure 11 can further include: a. A carrier substrate 113, b. An interface layer 114 extending on a carrier substrate 113 between the conductive terminals 112, and c. An emission structure matrix 1112, preferably extending directly onto the interface layer 114 between the conductive terminals 112.

[0085] The carrier substrate 113 may include at least one application-specific integrated circuit (ASIC). The carrier substrate 113 may include at least one electrical connection terminal 115 between the integrated circuit and at least one (e.g., a plurality of) light-emitting diodes 111. The interface layer 114 extends between adjacent component pairs formed by the conductive terminals 112 and the side dielectric walls 117 (described in detail below). The interface layer 114 may be composed of at least one layer of a metal material layer, more typically a stacked structure of metal material layers.

[0086] Each light-emitting diode 111 extends on the interface layer 114. Each electrical connection terminal 115 may form an electrical interconnection via hole 115 between the carrier substrate 113 and the light-emitting diode 111 suspended thereon through the interface layer 114. The via hole 115 is preferably located in the upper oxide layer (not shown in the figure) of the carrier substrate 113.

[0087] For example, the carrier substrate may be of the CMOS type, and thus in this example, the via hole 115 is preferably located above the last metal layer of the CMOS.

[0088] The interface layer 114 is preferably a conductive bonding interface between the carrier substrate 113 and the light-emitting structure matrix 1112. The interface layer 114 can ensure electrical conduction between the ASIC (located in the carrier substrate 113) and each light-emitting diode 111 through the via hole 115.

[0089] The light-emitting structure matrix 1112 includes at least a plurality of light-emitting diodes 111 and a plurality of conductive terminals 112. The matrix 1112 preferably constitutes a layer of each embodiment of the optoelectronic device 1 according to the first aspect of the present invention.

[0090] At least one (preferably each) light-emitting structure 1112 includes at least one light-emitting diode 111 and at least a part of each adjacent conductive terminal 112, and these conductive terminals 112 are at least partially electrically isolated from each other by the above-mentioned dielectric wall 117.

[0091] The stacked structure 11 further includes an electrode layer 116. The latter is preferably not only a conductive material but also a transparent material, at least within the wavelength range emitted by the light-emitting diodes 111 it covers. In this way, the electrode layer 116 can allow at least most of the emitted electromagnetic radiation or equivalent light to pass through the light-emitting diodes 111. As needed, the electrode layer 116 may extend continuously, on the one hand, between the light confinement layers 12 described below (e.g., see Figure 1On the other hand, it is located between the plurality of light-emitting diodes 111 and the conductive terminals 112.

[0092] The material for forming the electrode layer 116 can be a conductive transparent material (CTM), which is a solid that does not absorb visible light (bandgap greater than 3 eV) and has good electrical conductivity, including indium tin oxide (ITO), zinc oxide doped with aluminum or gallium, graphene, aluminum (the thickness is preferably substantially equal to 10 nm), aluminum-doped zinc oxide (AZO), or a combination of these materials. The thickness of the electrode layer 116 can be between 0.03 microns and 1 micron. It should be noted that the presence of the electrode layer 116 in the stacked structure 11 is optional. In particular, as long as the lateral electrical contact 1171 can be provided, which will be discussed further below.

[0093] At least one (preferably each) emission structure 1112 can further include at least one electrical isolation wall or insulating wall 117. As needed, the insulating wall 117 is to ensure electrical isolation between the elements it separates, in particular: a. Between at least one conductive terminal 112 and the carrier substrate 113, more specifically, between at least one conductive terminal 112 and each adjacent interface layer 114, and / or b. Between at least one conductive terminal 112 and at least one (preferably each) adjacent light-emitting diode 111 to avoid short-circuiting at least one p-region or n-region of the P-N junction of the light-emitting diode.

[0094] The electrical isolation ensured by the dielectric wall 117 can only be partial, especially when the optoelectronic device 1 does not include the above-mentioned electrode layer 116. In fact, in this case, there should preferably be a lateral electrical contact 1171 between at least one, and even each, of the plurality of conductive terminals 112 and at least one, preferably each, of the adjacent light-emitting diodes 111, and preferably between the second type 111c semiconductor layer of each light-emitting diode 111 (for example, see Figure 15 ).

[0095] More specifically, at least one (preferably each) emission structure further includes a dielectric wall 117, where the first dielectric wall 117a extends between at least one (preferably each) conductive terminal 112 and the carrier substrate 113, and the second dielectric wall 117b, called the side wall, extends on at least some sides of each conductive terminal 112. The first and second dielectric walls 117a and 177b are preferably connected to each other so as to electrically isolate each conductive terminal at its partial perimeter.

[0096] Light confinement layer 12 As Figures 1 to 8 and Figure 18As shown, the light confinement layer 12 extends above the stacked structure 11. It includes a reflective wall 121. The latter is preferably located on the right side of the conductive terminal 112, rather than on the right side of the light-emitting diode 111, so as not to obstruct the light emitted by the light-emitting diode 111. On the contrary, it can also reflect the light emitted by the light-emitting diode 111, thereby reducing the phenomenon of light crosstalk.

[0097] For example, at least one (possibly each) reflective wall 121 can be aluminum-based or even made of aluminum. Additionally, it can also be based on any reflective material or even made of any reflective material, especially for the wavelength emitted by the light-emitting diode 111: for example, it can be made of copper. However, one of the advantages of the present invention compared with the existing methods is the reduction of the technical steps required for manufacturing optoelectronic devices; however, as described below, one of the advantageous features of certain embodiments of the present invention is the presence of porous alumina 122 in the confinement layer 12, which is generated by locally anodizing a previous aluminum deposit on the stacked structure 11, and the deposit can also form the reflective wall 121 outside the anodized area of the confinement layer 12. At least part of the reflective wall 121 is not entirely made of aluminum. For example, at least one reflective wall 121, preferably each reflective wall 121, only has a part of its outer periphery, especially the side surface, made of aluminum. As an alternative or supplement, as Figure 18 shown, at least one (possibly each) reflective wall 121 can be composed of porous alumina 1211 and a reflective or absorbing material 1212 located in the pores of the porous alumina 1211; this embodiment can utilize the highly anisotropic anodization of aluminum in nanoporous alumina to obtain more reflective walls and / or more absorbing walls 121 according to the nature of the material filling the pores.

[0098] As Figure 1 shown, the reflective walls 121 (regardless of their structure) define or delimit a space 10 or an equivalent volume therebetween, and each space 10 or equivalent volume is located on the right side of at least one light-emitting diode 111. More specifically, each space 10 can be located on the right side of a pixel composed of multiple light-emitting diodes 111 (if necessary), or on the right side of a sub-pixel composed of a single light-emitting diode 111 (for example), and the reflective walls 121 defining the space 10 extend at least to the right side of at least a part of the conductive terminal 112 (preferably each conductive terminal 112) adjacent to the at least one light-emitting diode 111 on the right side of the location where the space 10 is located.

[0099] The porous alumina 122 is formed at least in part of the space 10 and may also be formed in each space 10.

[0100] According to Figure 1 、 Figure 2 、 Figure 5 、 Figure 6 、Figure 17 and Figure 18 The optoelectronic device 1 of some different embodiments shown is such that in at least some spaces 10, the light confinement layer 12 actually includes porous alumina 122, and the porous alumina 122 has at least two open pores 1221 on the first surface 12a of the confinement layer 12 in at least one of the at least some spaces, preferably in at least two spaces, and even in each space, and the first surface 12a is located opposite to the stacked structure 11. It should be noted that Figure 1 、 2 The embodiments shown in 5, 6, 17, and 18 constitute all or part of the final product, rather than intermediate products.

[0101] Figure 3 、 Figure 4 、 Figure 7 and Figure 8 The embodiments of the first aspect of the present invention shown can also be regarded as the final product, but cannot include porous alumina 122 on the right side of certain spaces 10. These embodiments are preferably manufactured according to the optoelectronic device of the first aspect of the present invention, as shown in Figure 1 、 Figure 3 、 Figure 7 and Figure 17 shown. As intermediate products, the porous alumina 122 of these intermediate products has the advantage of being easily etched and can be removed in whole or in part, locally or entirely.

[0102] The pores 1221 of the porous alumina 122 located on the right side of the space 10, whether they are the pores of the above-mentioned final product or intermediate product, preferably have a lateral dimension between 1 nm and 500 nm, preferably between 50 nm and 400 nm. As an alternative or supplement to the foregoing preferred scheme, the period of the pores 1221 of the porous alumina 122 preferably lies between 200 nm and 700 nm. In addition, the size of the pores is preferably larger than the size of the color conversion particles to slide therein, so that there is at least one color conversion particle in each pore. Therefore, the lateral dimension of the pores 1221 depends on the size of the light color conversion material particles to be introduced therein; the parameters for anodizing the aluminum layer to form porous alumina are preferably determined accordingly.

[0103] When necessary, the porous alumina 122 located on the right side of the conductive terminal 112 can have the same characteristics as described above to define the porous alumina 122 located at least in part of the space 10.

[0104] Different materials can constitute the above-mentioned light color conversion material particles. For example: a. Quantum dots, b. J-aggregates, c. Phosphorescence (or fluorescent nanoparticles), and d. Perovskites, As needed, it can be placed in a solution in a solvent or added to a resin, and these are all regarded as particles made of a light color conversion material. These particles can have different characteristic sizes, and those familiar with the technology should know how to configure the anodization process to form porous alumina 122 through the anodization process to obtain open pores 1221, so that at least one such particle, preferably multiple such particles, can be introduced therein.

[0105] It must be noted that the solvent for placing the particles in the solution only exists when these particles are deposited in the pores 1221, because the subsequent drying step can well evaporate the solvent, so according to the first aspect of the present invention, the solvent does not exist in the optoelectronic device 1.

[0106] The photochromic conversion material 123 is preferably grafted onto the inner wall of the pores 1221. The above-mentioned solvent or resin can play a favorable role in forming such a graft. However, more generally, before depositing the photochromic conversion material 123 in the pores 1221 of the porous alumina 122, or even during the deposition process, the particles of the photochromic conversion material 123 and / or the inner wall of the pores 1221 can be functionalized to graft to each other, for example, through surface - OH hydrogen bonds, and if necessary, through alkaline chemical treatment or dry plasma treatment or by adsorbing ligands to form.

[0107] On the first surface 12a of the confinement layer 12 opposite to the stack structure 11, there is at least one (preferably each) open pore 1221, and its filling rate (made of a light color conversion material) is preferably substantially equal to 30%. Such a filling rate can be easily achieved through the above-mentioned grafting.

[0108] Optoelectronic device 1 The layer 12 is called a light confinement layer because this is its main function, but as mentioned above, it can also achieve the color conversion function; in addition, at least for some embodiments of the first aspect of the present invention, especially Figure 2 、 Figure 4 、 Figure 6 、 Figure 8 and Figure 18 the embodiments shown, it can also be called the "light confinement and conversion layer 12".

[0109] The light - emitting diode 111 can be configured to emit light of a determined first wavelength, such as blue light, along a direction substantially perpendicular to the first surface 12a of the confinement layer 12.

[0110] As a supplement or alternative, the photochromic conversion material 123 can be specifically used to convert light of a first wavelength into light of a second wavelength, where the second wavelength is different from the first wavelength. For example, the first wavelength is in the blue light range, and the second wavelength is any wavelength in the green light and red light ranges. According to one embodiment, the converted green light wavelength is substantially between 510 nanometers and 570 nanometers. According to one embodiment, the converted red light wavelength is substantially between 600 nanometers and 720 nanometers.

[0111] As Figure 1 , Figure 2 , Figure 5 , Figure 6 and Figure 18 shown, the pores 1221 of the porous alumina 122 form channels 122a leading to the first surface 12a of the confinement layer 12. The channels 122a preferably mainly extend in a direction perpendicular to the first surface 12a of the confinement layer 12; more specifically, they can extend in a direction perpendicular to the first surface 12a for a distance Lp, which is strictly greater than half of the thickness E12 of the confinement layer 12. More specifically, the pores 1221 can substantially extend into the stack structure 11, preferably without extending into the stack structure 11 (except for the aluminum terminals above the conductive terminals, which can prevent delamination of the structure), to limit any risk of delamination, maximize the inner wall surface, thereby maximizing the above grafting, and further allowing the photochromic conversion material 123 to fill the pores. Therefore, the shape factor of at least one pore 1221 (preferably each pore 1221) can be determined by the lateral dimension and / or the longitudinal dimension, where the lateral dimension is substantially between 40 nm and 800 nm, and the longitudinal dimension is substantially between 500 nm and 10 µm, preferably between 1 µm and 5 µm.

[0112] On the right side of the same light-emitting diode 111, there are at least two pores 1221, even at least eight pores 1221, or at least one pore per 2×λ, where λ represents the wavelength to be extracted, and there are at least four pores in each space (for the 1 µm pixel case). Filling the pores 1221 with the photochromic conversion material 123 can increase the conversion rate by increasing diffusion in multiple pores on the right side of the same light-emitting diode 111, while reducing the optical crosstalk phenomenon through the synergistic effect with the reflective wall 121.

[0113] As described above, in the Figure 3 , Figure 4 and Figure 8 shown final product, at least one, or even more voids 10 in the light confinement layer 12 may not contain the porous alumina 122, but the porous alumina 122 is always located in at least one void 10. Therefore, as Figure 3 shown, at least one (preferably each) space 10 without the porous alumina 122 can be "empty", or asFigure 4 As shown, it is filled with the optical color conversion material 123. In the latter case, the optical color conversion material 123 can be selected from the above materials to fill the pores 1221.

[0114] As described above, at least one conductive terminal 112 and the reflective wall 121 located on the right side of the at least one conductive terminal can be based on aluminum and even made of aluminum; thus, they can form an integral body together, especially in the case where there is no electrode layer 116, as Figure 5 、 6 、7 and 8 show. Therefore, the conductive terminal 121 can be made of the same material as the reflective wall 121, thereby simplifying the device 1 and its manufacturing method, especially avoiding the technical deposition step of the conductive terminal 121, such as by electroplating, whose base material is a metal material other than aluminum, such as a copper-based material.

[0115] Manufacturing method The features related to the manufacturing method of implementing the optoelectronic device embodiment according to the second aspect of the present invention have been introduced above.

[0116] However, it should be noted that the manufacturing method according to the second aspect of the present invention includes the following steps: a. Providing a stacked structure 11, for example, as Figure 9 shown, including: i. A plurality of P-N junction light-emitting diodes 111 that are kept at a certain distance from each other, and ii. A plurality of conductive terminals 112 arranged between the light-emitting diodes, The conductive terminal 112 is electrically isolated from at least one p-region or n-region of the P-N junction of the light-emitting diode 111 to avoid short circuits, b. As Figure 10 and Figure 13 shown, by depositing aluminum base layers 1000, 2000 on the main surface 11a of the stacked structure 11, an optical confinement layer 12 is formed on the stacked structure 11, which is composed of reflective walls 121, and spaces 10 are defined between the reflective walls 121, and each space 10 is located on the right side of the light-emitting diode 111, and the light-emitting diode 111 can emit light through this space; then c. Anodizing at least the aluminum base layers 1000 and 2000 outside the right-side region of the conductive terminal 112 of the stacked structure 11 to obtain, for example, Figure 11 and Figure 12 as well as Figure 14 and Figure 15 the structures shown, According to the manufacturing method of the second aspect of the present invention, mainly as described above, through anodic oxidation treatment, porous alumina 122 is formed in at least part of the space 10, that is, in at least one space, preferably at least two spaces, and even in each space of the at least part of the space 10, there are at least two open pores 1221 on the first surface 12a of the constraint layer 12 opposite to the stacked structure 11.

[0117] The following refers to Figures 10 to 12 Describe the first implementation of the manufacturing method of the second aspect of an embodiment of the optoelectronic device 1 according to the first aspect of the present invention. In Figures 10 to 12 , an aluminum layer 1000 with a thickness of E12 is deposited on the stacked structure 11, more specifically on the electrode layer 116 of the stacked structure 11. Then, local anodic oxidation treatment is performed on the area of the aluminum layer 1000 on the right side of the light-emitting diode 111 using a mask 1100, so as to obtain the optoelectronic device as shown in Figure 12 . Just removing the mask 1100 can obtain the optoelectronic device as shown in Figure 1 . Then, the pores 1221 formed thereby can be filled with a light color conversion material 123 (as detailed above) to obtain the optoelectronic device as shown in Figure 2 . It should be noted that anodic oxidation is also partially carried out under the mask. Therefore, the size of the mask is preferably smaller than the size of the nanoporous cavity; the greater the thickness that needs to be anodized, the more obvious this effect is.

[0118] The following refers to Figures 13 to 15 , and Figure 5 Describe the second implementation of the manufacturing method of an embodiment of the optoelectronic device 1 according to the second aspect of the present invention as shown in. In Figures 13 to 15 , the deposition process of the conductive terminals 112 between the light-emitting diodes 111 is observed respectively to finally form a stacked structure 11 without an electrode layer 116. Then, the deposition range is expanded, and an aluminum layer 2000 with a thickness of E12 is formed on the stacked structure 11. Then, local anodic oxidation treatment is performed on the area of the aluminum layer 2000 on the right side of the light-emitting diode 111 using a mask 2100 to obtain the optoelectronic device as shown in Figure 15 . Just removing the mask 2100 can obtain the optoelectronic device as shown in Figure 5 . Then, the pores 1221 formed thereby can be filled with a light color conversion material 123 (as detailed above) to obtain the optoelectronic device as shown in Figure 6 .

[0119] It should be noted that, as described above, the anodization step may further include anodizing the aluminum base layers 1000, 2000 located on the right side of at least one conductive terminal 112, preferably simultaneously. According to the manufacturing method of the present example, it may then further include depositing a reflective (or absorptive) material 1212 in the pores of the porous alumina 1211 located on the right side of the at least one conductive terminal 112.

[0120] The present invention is not limited to the above embodiments or the above implementation schemes, but extends to all embodiments and implementation schemes covered by the present invention.

Claims

1. An optoelectronic device (1), comprising: • A stacking structure (11), the stacking structure comprising: i. a plurality of PN junction light emitting diodes (111) arranged at intervals from each other, and ii. a plurality of conductive terminals (112) arranged between the light emitting diodes (111), The conductive terminal (112) is electrically isolated from at least one p-region or n-region of a PN junction of a light-emitting diode, and • a light confinement layer (12) extending on the stacked structure (11), comprising reflective walls (121), wherein spaces (10) are defined between the reflective walls (121), and the spaces (10) are located on the right side of at least one, preferably each, light emitting diode (111), The light confinement layer (12) of the optoelectronic device (1) further comprises porous aluminum oxide (122) at least in part of the space (10), wherein the porous aluminum oxide (122) has at least two open pores (1221) on the first surface (12a) of the confinement layer (12) in at least one space, preferably at least two spaces, and even in each space, on the first surface (12a) of the confinement layer (12) opposite to the stacked structure (11). The optoelectronic device (1) is characterized in that at least one reflecting wall (121), or each reflecting wall (121), is based on porous aluminum oxide (1211) and a reflecting material (1212) located in the pores of the porous aluminum oxide (1211).

2. The optoelectronic device (1) according to claim 1, wherein the lateral dimensions of the pores (1221) of the porous aluminum oxide (122) are between 1 nm and 500 nm, preferably between 50 nm and 400 nm.

3. The optoelectronic device (1) according to any one of the preceding claims, wherein the pores (1221) of the porous aluminum oxide (122) have a periodicity between 200 nm and 700 nm.

4. The optoelectronic device (1) according to any of the preceding claims, wherein the porous alumina (122) has at least eight open pores (1221) in at least one space, preferably at least two spaces, or even at least some spaces in each space, on the first surface (12a) of the constrained layer (12) opposite to the stacked structure.

5. The optoelectronic device (1) according to any of the preceding claims, wherein the filling rate of at least one open pore (1221), preferably each open pore, on the first side (12a) of the constrained layer (12) opposite the stacked structure (11) is substantially equal to 30% of the light color conversion material.

6. The optoelectronic device (1) according to any one of the preceding claims, wherein the pores (1221) of the porous alumina (122) form channels (122a) leading to the first face (12a) of the confinement layer (12).

7. The optoelectronic device (1) according to any of the preceding claims, wherein the pores (1221) of the porous alumina (122) form channels (122a) extending mainly in a direction perpendicular to the first face (12a) of the confinement layer (12).

8. An optoelectronic device (1) according to any of the preceding claims, wherein the length Lp of at least part of the pores (1221) measured by projecting in a direction perpendicular to the first surface (12a) is at most equal to the thickness of the aluminum base layer, and is preferably strictly smaller than the thickness of the aluminum base layer, for example 2 nm.

9. The optoelectronic device (1) according to any one of the preceding claims, wherein the pores (1221) extend substantially to the stack structure (11).

10. An optoelectronic device (1) according to any of the preceding claims, wherein at least one hole (1221) has a shape factor determined by a lateral dimension substantially between 40 nm and 800 nm and / or a longitudinal dimension substantially between 500 nm and 10 µm, preferably substantially between 1 µm and 5 µm.

11. An optoelectronic device (1) according to any one of the preceding claims, wherein the surface area occupied by the open pores (1221) on the first surface of the constrained layer (12) is substantially equal to 30% of the total surface area of ​​the constrained layer, and / or the distance between adjacent open pores (1221) above at least one light-emitting diode (111) measured at their centers is substantially equal to the wavelength of light emitted by the light-emitting diode (111) below, which wavelength typically belongs to the blue light spectrum range, for example between 380nm and 450nm.

12. The optoelectronic device (1) according to any one of the preceding claims, wherein the stacked structure (1) further comprises: • a carrier substrate (113), and • a matrix of light-emitting structures (1112) extending on a carrier substrate (113), The light emitting structure matrix (1112) includes a plurality of light emitting diodes (111) extending on a carrier substrate (113) through an interface layer (114), and a plurality of conductive terminals optionally extending on the carrier substrate (113) through an electrical isolation wall (117).

13. An optoelectronic device (1) according to any preceding claim, wherein at least one reflecting wall (121) or each reflecting wall is aluminium based.

14. The photovoltaic device (1) according to claim 13, wherein at least one conductive terminal (112) is aluminum-based, and if necessary, the at least one conductive terminal (112) and the reflective wall (121) located on the right side of the at least one conductive terminal (112) form a whole.

15. The optoelectronic device (1) according to any of the preceding claims, further comprising a light color conversion material (123) in the pores (1221) of the porous aluminum oxide (122) located to the right of at least one light emitting diode (111), preferably to the right of each light emitting diode.

16. The optoelectronic device (1) according to claim 15, wherein the light color conversion material (123) is grafted onto the inner wall of the pore (1221).

17. The optoelectronic device (1) according to any one of claims 15 to 16, wherein the light confinement layer (12) does not contain porous aluminum oxide (122) in at least one space (10) or in a plurality of spaces (10).

18. The optoelectronic device (1) according to claim 17, wherein at least one space (10) not containing porous aluminum oxide (122), preferably each space (10) not containing porous aluminum oxide (122) is filled with a light color conversion material (123).

19. The optoelectronic device (1) according to any one of claims 16 to 18, wherein the light color conversion material (123) comprises at least one of the following materials: •Quantum dots, • J aggregates, • Phosphorescent nanoparticles, and • Perovskites, It is dissolved in a solvent or added to a resin when necessary.

20. A method for manufacturing an optoelectronic device (1), comprising the following steps: • Providing a stacking structure (11), the stacking structure (11) comprising: i. a plurality of PN junction light emitting diodes (111) arranged at intervals from each other, and ii. a plurality of conductive terminals (112) disposed between the light emitting diodes, The conductive terminal is electrically isolated from at least one p-region or n-region of the PN junction of the light-emitting diode, • forming a light confinement layer (12) on the stacked structure (11), the layer comprising reflective walls (121), spaces (10) defined between the reflective walls, each space being located on the right side of the light-emitting diode (111), and the specific implementation steps comprising: i. depositing an aluminum base layer (1000, 2000) on the main surface (11a) of the stacked structure (11), through which the light-emitting diode (111) emits light, and then ii. performing anodizing treatment on the aluminum base layer (1000, 2000) at least outside the area to the right of the conductive terminal (112) of the stacked structure (11), • the anodization is configured so that porous aluminum oxide (122) is formed in at least a portion of the space (10), at least one space, preferably at least two spaces, or even in each space in at least a portion of the space (10) has at least two open pores (1221) on the first face (12a) of the constrained layer (12) located opposite to the stacked structure (11), •Wherein, the anodizing step includes anodizing a portion of the aluminum base layer (1000, 2000) located on the right side of at least one conductive terminal (112), and also includes depositing a reflective material (1212) in the pores of the porous aluminum oxide (1211) located on the right side of the at least one conductive terminal (112).

21. The manufacturing method according to claim 20, wherein the step of anodizing the aluminum base layer (1000, 2000) is configured so that the porous aluminum oxide (122) forms channels (122a) opening through open pores (1221) on the first surface (12a) of the constrained layer (12), and preferably so that the lateral dimension of at least one channel (122a), for example, each channel is substantially between 40nm and 800nm, and / or the longitudinal dimension of at least one channel (122a), for example, each channel is substantially between 500nm and 10µm, preferably substantially between 1µm and 6µm.

22. The manufacturing method according to any one of claims 20-21, further comprising after depositing the aluminum base layer (1000, 2000) and before anodizing: • depositing a mask (1100, 2100) on an area of ​​the aluminum base layer substantially located to the right of the conductive terminal (112) of the stacked structure (11), wherein the opening on the mask is located to the right of the light-emitting diode (111), The aluminum base layer (1000, 2000) is anodized through the openings of the deposition mask (1100).

23. A manufacturing method according to any one of claims 20-22, wherein the step of providing a stacked structure (11) includes depositing aluminum between the light-emitting diodes (111) to form at least a portion of a plurality of conductive terminals (112) of the stacked structure (11), and extending the deposition step to deposit an aluminum base layer (1000, 2000).

24. The manufacturing method according to any one of claims 20 to 23, further comprising depositing a light color conversion material (123) in the pores (1221) of the porous aluminum oxide (122) and in at least one space (10).

25. The manufacturing method according to claim 24, wherein: Before depositing the photochromic conversion material (123) in the pores (1221) of the porous alumina (122), the photochromic conversion material (123) and / or the inner wall of the pores (1221) are functionalized to facilitate mutual grafting, for example, through surface-OH bonds, by alkaline chemical treatment or dry plasma treatment or by adsorption of ligands as required.

26. The manufacturing method according to any one of claims 20 to 25, comprising removing the porous aluminum oxide (122) in at least one of the spaces (10), for example, a part of the space, by etching or the like, and filling the at least one space (10) thus removed with a light color conversion material (123).

27. Display screen or system for projecting at least one image, comprising at least one optoelectronic device (1) according to any one of claims 1 to 19.

Images