Display panel, manufacturing method of display panel and electronic equipment

Abstract

The invention provides a display panel, a manufacturing method of the display panel and electronic equipment. The display panel can comprise an array substrate, a first electrode layer, a pixel defining layer, an isolation structure, a light-emitting material layer, a second electrode layer and a first packaging layer. The thickness of the part, corresponding to the first packaging layer and attached to the side face of the isolation structure, of the first sub-pixel is smaller than the thickness of the part, corresponding to the second sub-pixel and attached to the side face of the isolation structure, of the first packaging layer. According to the display panel, at least part of the first packaging layer covering the side face, corresponding to the isolation structure, of the second sub-pixel is reserved, damage to the isolation structure when the first packaging layer is etched can be reduced, the success rate of effective lap joint of the second electrode layer and the isolation structure in the follow-up process is increased, and therefore the lightening yield of the display panel is increased.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and more particularly, to a display panel, a manufacturing method of the display panel, and an electronic device. Background Art

[0002] In some display panels, in order to reduce the accuracy requirements for the evaporation of the light-emitting material layer, an isolation structure is provided on the pixel definition layer. During the evaporation process of the entire layer, the light-emitting material layer between adjacent pixel openings is disconnected through the isolation structure. Thus, different light-emitting material layers, cathode layers, and first encapsulation layers of different colors can be provided in different pixel openings by using the method of etching after the entire layer is evaporated. The isolation structure also needs to achieve the electrical connection of the cathode layers between different pixel openings.

[0003] However, in the display panel manufactured by such a method, the process of etching the first encapsulation layer may damage the isolation structure, resulting in the inability of the cathode layer to effectively overlap with the isolation structure, thereby affecting the lighting yield of the display panel. Summary of the Invention

[0004] In order to overcome the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a display panel, which includes:

[0005] An array substrate;

[0006] A first electrode layer located on one side of the array substrate, the first electrode layer including a plurality of first electrodes;

[0007] An isolation structure located on the side of the array substrate where the first electrode layer is provided, the isolation structure exposing the first electrode through a pixel opening; the pixel opening includes a pixel opening corresponding to at least one first sub-pixel and a pixel opening corresponding to at least one second sub-pixel;

[0008] A light-emitting material layer and a second electrode layer located in the pixel opening, the second electrode layer overlapping with the isolation structure;

[0009] A first encapsulation layer located on the side of the second electrode layer away from the array substrate, the first encapsulation layer extending from the inside of the pixel opening along the side surface of the isolation structure to the side of the isolation structure away from the array substrate; the side surface of the isolation structure is the surface of the isolation structure facing the pixel opening;

[0010] Wherein, the thickness of the portion of the first encapsulation layer corresponding to the first sub-pixel attached to the side surface of the isolation structure is less than the thickness of the portion of the first encapsulation layer corresponding to the second sub-pixel attached to the side surface of the isolation structure.

[0011] In some possible implementations, the display panel further includes a pixel defining layer located on a side of the first electrode layer away from the array substrate, and the pixel defining layer includes a plurality of second openings respectively exposing a plurality of the first electrodes;

[0012] Wherein, the isolation structure is located on a side of the pixel defining layer away from the array substrate, and a positive projection of the isolation structure on the array substrate is located within a positive projection of the pixel defining layer on the array substrate; the isolation structure includes a plurality of first openings, and the first openings of the isolation structure communicate with the second openings of the pixel defining layer to form the pixel openings; the light-emitting material layer and the second electrode layer are located within the pixel openings.

[0013] In some possible implementations, the first encapsulation layer corresponding to the first sub-pixel includes a first sub-layer; the first encapsulation layer corresponding to the second sub-pixel includes a first sub-layer and a second sub-layer. In the first encapsulation layer corresponding to the second sub-pixel, the first sub-layer covers at least a part of a side surface of the isolation structure, and the second sub-layer extends from within the pixel opening corresponding to the second sub-pixel along the side surface of the first sub-layer and / or the isolation structure to a side of the isolation structure away from the array substrate.

[0014] In some possible implementations, a thickness of the first sub-layer corresponding to the second sub-pixel is less than a thickness of the first sub-layer corresponding to the first sub-pixel.

[0015] In some possible implementations, a side surface of the isolation structure corresponding to the second sub-pixel includes an exposed area at least partially uncovered by the first sub-layer; the second electrode layer corresponding to the second sub-pixel is in electrical contact with the exposed area of the isolation structure.

[0016] In some possible implementations, the isolation structure includes a first metal layer, a second metal layer, and a third metal layer sequentially stacked in a direction from near the array substrate to far from the array substrate; in the first encapsulation layer corresponding to the second sub-pixel, the first sub-layer exposes at least a part of the first metal layer of the isolation structure; the second electrode layer corresponding to the second sub-pixel is in electrical contact with the first metal layer.

[0017] In some possible implementations, the thickness of the first sub-layer corresponding to the second sub-pixel is to

[0018] Preferably, the thickness of the second sub-layer corresponding to the second sub-pixel is to

[0019] In some possible implementations, the first sub-pixel includes sub-pixels of a first color, and the second sub-pixel includes sub-pixels of a second color and / or a third color.

[0020] In some possible implementations, the display panel further includes:

[0021] A second encapsulation layer located on a side of the first encapsulation layer away from the array substrate;

[0022] A third encapsulation layer located on a side of the second encapsulation layer away from the array substrate;

[0023] Preferably, the materials of the first encapsulation layer and the third encapsulation layer include inorganic materials; the material of the second encapsulation layer includes an organic material;

[0024] Preferably, the first encapsulation layer and the third encapsulation layer are formed by chemical vapor deposition, and the second encapsulation layer is formed by inkjet printing.

[0025] This application also provides a manufacturing method of a display panel, the method including:

[0026] Providing an array substrate;

[0027] Sequentially forming a first electrode layer and an isolation structure on one side of the array substrate; the first electrode layer includes a plurality of first electrodes; the isolation structure exposes the first electrodes through pixel openings; the pixel openings include pixel openings corresponding to at least one first sub-pixel and pixel openings corresponding to at least one second sub-pixel;

[0028] Forming a light-emitting material layer, a second electrode layer, and a first sub-layer of the first encapsulation layer by means of whole-layer evaporation;

[0029] Setting a first etching protection layer, the first etching protection layer covering the pixel openings corresponding to the first sub-pixels and exposing the pixel openings corresponding to the second sub-pixels;

[0030] Etching and removing the first sub-layer, the second electrode layer, and the light-emitting material layer at the bottom of the pixel openings corresponding to the second sub-pixels, and retaining at least a part of the first sub-layer covering the side surfaces of the isolation structures corresponding to the second sub-pixels; the bottom of the pixel openings is the side of the pixel openings close to the array substrate;

[0031] Forming a light-emitting material layer, a second electrode layer, and a second sub-layer of the first encapsulation layer in the pixel openings corresponding to the second sub-pixels, the second sub-layer extending from within the pixel openings to a side of the isolation structure away from the array substrate.

[0032] In some possible implementation manners, the step of etching away the first sub-layer, the second electrode layer, and the light-emitting material layer at the bottom of the pixel opening corresponding to the second sub-pixel and retaining at least a part of the first sub-layer covered on the side surface of the isolation structure corresponding to the second sub-pixel includes:

[0033] Perform a first etching on the first sub-layer, the second electrode layer, and the light-emitting material layer corresponding to the second sub-pixel to etch away the first sub-layer, the second electrode layer, and the light-emitting material layer at the bottom of the pixel opening corresponding to the second sub-pixel;

[0034] Perform a second etching on the first encapsulation layer covered on the side surface of the isolation structure corresponding to the second sub-pixel to thin or remove at least a part of the first sub-layer covered on the side surface of the isolation structure corresponding to the second sub-pixel;

[0035] Preferably, the etching rate of the first sub-layer in the second etching is lower than the etching rate of the first sub-layer in the first etching, and / or the etching time of the second etching is shorter than the etching time of the first etching.

[0036] This application further provides an electronic device, and the electronic device includes the display panel provided by this application.

[0037] Compared with the prior art, this application has the following beneficial effects:

[0038] For the display panel, the manufacturing method of the display panel, and the electronic device provided by this application, by retaining at least a part of the first encapsulation layer covered on the side surface of the isolation structure corresponding to the second sub-pixel, damage to the isolation structure during the etching of the first encapsulation layer can be reduced, the success rate of effective lap joint between the subsequent second electrode layer and the isolation structure can be improved, and thus the lighting yield of the display panel can be increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] To clearly illustrate the technical solutions in the embodiments of this application, the following will briefly introduce the drawings required for the embodiments. It should be understood that the following drawings only show some embodiments of this application, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without creative efforts.

[0040] Figure 1 Schematic diagram of a display panel using an isolation structure;

[0041] Figure 2 One of the schematic diagrams of the display panel provided by this embodiment;

[0042] Figure 3Schematic diagram of the isolation structure provided in this embodiment;

[0043] Figure 4 Second schematic diagram of the display panel provided in this embodiment;

[0044] Figure 5 Third schematic diagram of the display panel provided in this embodiment;

[0045] Figure 6 Schematic flow chart of the manufacturing method of the display panel provided in this embodiment;

[0046] Figure 7 First schematic diagram of the manufacturing process of the display panel provided in this embodiment;

[0047] Figure 8 Second schematic diagram of the manufacturing process of the display panel provided in this embodiment;

[0048] Figure 9 Third schematic diagram of the manufacturing process of the display panel provided in this embodiment;

[0049] Figure 10 Fourth schematic diagram of the manufacturing process of the display panel provided in this embodiment.

[0050] Icons: 110 - array substrate; 120 - first electrode layer; 130 - pixel defining layer; 140 - isolation structure; 150 - light emitting material layer; 160 - second electrode layer; 170 - first encapsulation layer; 171 - first sub - layer; 172 - second sub - layer; 180 - second encapsulation layer; 190 - third encapsulation layer; 301 - etching protection layer; 201 - first sub - pixel; 202 - second sub - pixel; 300 - pixel opening. Detailed implementation manners

[0051] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Usually, the components of the embodiments of the present application described and illustrated herein can be arranged and designed in various different configurations.

[0052] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present application.

[0053] It should be noted that like reference numerals and letters denote like items in the following figures. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0054] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the figures, or the orientation or positional relationship in which the inventive product is customarily placed during use. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be construed as indicating or implying relative importance.

[0055] It should be noted that, without conflict, different features in the embodiments of the present application can be combined with each other.

[0056] Please refer to Figure 1 , Figure 1 which is a schematic diagram of some display panels adopting an isolation structure. Such display panels include an array substrate 110', a first electrode layer 120' located on one side of the array substrate 110', a pixel defining layer 130' located on the side of the first electrode layer 120' away from the array substrate 110', an isolation structure 140' located on the side of the pixel defining layer 130' away from the array substrate 110', a light-emitting material layer 150' located in a first opening formed by the pixel defining layer 130', a second electrode layer 160', and a first encapsulation layer 170'. Among them, the isolation structure 140' has conductivity, and the second electrode layer 160' in each first opening extends from the first opening to the side of the pixel defining layer 130' away from the array substrate 110' and is in electrical contact with the isolation structure 140', so that the second electrode layers 160' in each first opening are interconnected to form a common electrode.

[0057] In such display panels, the inventors have found that usually after making the first opening, a light-emitting material layer 150', a second electrode layer 160', and a first encapsulation layer 170' of one color are set by means of blanket evaporation, and then part of the light-emitting material layer 150', the second electrode layer 160', and the first encapsulation layer 170' in the first opening are removed by etching, and at the same time, the first encapsulation layer 170' covering the side of the isolation structure 170' is also removed. Subsequently, light-emitting material layers 150', second electrode layers 160', and first encapsulation layers 170' of other colors are evaporated.

[0058] Among them, during the process of etching and removing the first encapsulation layer 170’, some isolation structures 140’ may be damaged during the etching of the first encapsulation layer 170’ (such as Figure 1 the position indicated by the thick-line circle), resulting in the second electrode layer 160’ formed by subsequent evaporation deposition being unable to effectively overlap with the isolation structure 140’, and further resulting in dark spots in the display panel, affecting the lighting yield of the display panel.

[0059] In view of this, this embodiment provides a solution that can reduce the risk of dark spots in the display panel and improve the lighting yield of the display panel. The solution provided in this embodiment will be elaborated in detail below.

[0060] Please refer to Figure 2 , Figure 2 which is a schematic diagram of a display panel provided in this embodiment. The display panel may include an array substrate 110, a first electrode layer 120, an isolation structure 140, a light-emitting material layer 150, a second electrode layer 160, and a first encapsulation layer 170.

[0061] The array substrate 110 may include a plurality of film layer structures, such as a substrate, a buffer layer, an active layer, a plurality of metal layers, a plurality of insulating layers, and a planarization layer. The plurality of film layer structures of the array substrate 110 may form a plurality of thin film transistors (TFTs) at different positions of the array substrate 110. The thin film transistors may cooperate with each other to form a plurality of driving units, and the driving units are used to drive the pixels to emit light.

[0062] The first electrode layer 120 is located on one side of the array substrate 110. The first electrode layer 120 includes a plurality of first electrodes arranged at intervals. Each first electrode may be electrically connected to one or more driving units in the array substrate 110 to obtain electrical energy from the driving units.

[0063] The isolation structure 140 is located on the side of the array substrate 110 where the first electrode layer 120 is provided. The isolation structure 140 exposes the first electrode through the pixel opening. In this embodiment, among the plurality of pixel openings, there are pixel openings corresponding to the first sub-pixel 201 and pixel openings corresponding to the second sub-pixel 202.

[0064] For example, please refer to Figure 3 , due to the existence of the pixel opening, the isolation structure 140 forms a mesh structure that exposes each first electrode. When the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 are formed by subsequent evaporation deposition, the isolation structure 140 can disconnect the light-emitting material layer 150 and the second electrode layer 160 between adjacent pixel openings.

[0065] At least a part of the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 is located within the pixel opening, and they are stacked in sequence from the direction close to the array substrate 110 to the direction away from the array substrate 110. Among them, the light-emitting material layer 150 is in electrical contact with the first electrode layer 120, and the light-emitting material layer 150 is located between the first electrode layer 120 and the second electrode layer 160. When there is a potential difference between the first electrode layer 120 and the second electrode layer 160, the light-emitting material layer 150 is driven to emit light.

[0066] The isolation structure 140 has conductivity, and the second electrode layer 160 overlaps with the isolation structure 140. The isolation structure 140 includes a bottom surface on the side close to the array substrate 110, a top surface on the side away from the array substrate 110, and a side surface connecting the top surface and the bottom surface. At least a part of the side surface faces the pixel opening. The first encapsulation layer 170 extends from within the pixel opening along the side surface of the isolation structure 140 facing the second opening to the side of the isolation structure 140 away from the array substrate 110.

[0067] In this embodiment, in the direction perpendicular to the side surface of the isolation structure 140, the thickness W1 of the part of the first encapsulation layer 170 corresponding to the first sub-pixel 201 attached to the side surface of the isolation structure 140 is less than the thickness W2 of the part of the first encapsulation layer 170 corresponding to the second sub-pixel 202 attached to the side surface of the isolation structure 140.

[0068] In this embodiment, the first encapsulation layer 170 can be an encapsulation layer made of an inorganic material. For example, the first encapsulation layer 170 can be formed by chemical vapor deposition (CVD) of an inorganic material.

[0069] In a possible implementation manner, the pixel definition layer 130 is located on the side of the array substrate 110 where the first electrode layer 120 is provided. The pixel definition layer 130 includes a second opening exposing the first electrode, and adjacent first electrodes are isolated from each other by the pixel definition layer 130.

[0070] The isolation structure 140 is located on the side of the pixel definition layer 130 away from the array substrate 110. The orthographic projection of the isolation structure 140 on the array substrate 110 is located within the orthographic projection of the pixel definition layer 130 on the array substrate 110. The isolation structure 140 includes a plurality of first openings, and the first openings of the isolation structure 140 communicate with the second openings of the pixel definition layer 130 to form a pixel opening.

[0071] The light-emitting material layer 150 and the second electrode layer 160 are located within the pixel opening. The second electrode layer 160 extends from within the first opening to the side of the pixel definition layer 130 away from the array substrate 110 and is in electrical contact with the isolation structure 140.

[0072] In some possible implementations, the first encapsulation layer 170 corresponding to the first sub-pixel 201 includes a first sub-layer 171, and the first encapsulation layer 170 corresponding to the second sub-pixel 202 includes the first sub-layer 171 and a second sub-layer 172. Among them, in the first encapsulation layer 170 corresponding to the second sub-pixel 202, the first sub-layer 171 covers at least part of the side surface of the isolation structure 140, and the second sub-layer 172 extends from within the pixel opening corresponding to the second sub-pixel 202 along the side surface of the first sub-layer 171 and / or the isolation structure 140 to the side of the isolation structure 140 away from the array substrate 110.

[0073] Specifically, the first sub-layer 171 corresponding to the second sub-pixel 202 and the first sub-layer 171 corresponding to the first sub-pixel 201 can be formed in the same process. For example, when forming the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 (i.e., the first sub-layer 171) corresponding to the first sub-pixel 201, the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 (i.e., the first sub-layer 171) will also be formed simultaneously within the pixel opening corresponding to the second sub-pixel 202.

[0074] Then, when etching and removing the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 within the first opening corresponding to the second sub-pixel 202, at least part of the first sub-layer 171 covering the side surface of the isolation structure 140 corresponding to the second sub-pixel 202 is retained. Subsequently, when forming the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 (i.e., the second sub-layer 172) corresponding to the second sub-pixel 202, the second sub-layer 172 covers the first sub-layer 171.

[0075] That is, when etching and removing the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 within the first opening corresponding to the second sub-pixel 202, only the first sub-layer 171 covering the side surface of the isolation structure 140 corresponding to the second sub-pixel 202 is retained, and the first sub-layer 171 within the first opening and on the side of the isolation structure 140 away from the array substrate 110 needs to be etched and removed.

[0076] It should be noted that when etching and removing the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 within the first opening corresponding to the second sub-pixel 202, the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 deposited on the side of the isolation structure 140 away from the array substrate 110 will also be etched and removed.

[0077] In this case, since the first encapsulation layer 170 corresponding to the first sub-pixel 201 only includes the first sub-layer 171, and the first encapsulation layer 170 corresponding to the second sub-pixel 202 includes the first sub-layer 171 and the second sub-layer 172, the thickness of the portion of the first encapsulation layer 170 corresponding to the first sub-pixel 201 attached to the side of the isolation structure 140 is less than the thickness of the portion of the first encapsulation layer 170 corresponding to the second sub-pixel 202 attached to the side of the isolation structure 140.

[0078] On this basis, in a possible implementation, when etching and removing the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 in the first opening corresponding to the second sub-pixel 202, only the first sub-layer 171 in the first opening and on the side of the isolation structure 140 away from the array substrate 110 can be etched and removed, but the first sub-layer 171 located on the side of the isolation pillar 141 corresponding to the second sub-pixel 202 is completely retained.

[0079] In this way, after performing subsequent processes, the thickness of the first sub-layer 171 corresponding to the second sub-pixel 202 can be substantially the same as the thickness of the first sub-layer 171 corresponding to the first sub-pixel 201.

[0080] In another possible implementation, when etching and removing the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 in the first opening corresponding to the second sub-pixel 202, or, after etching and removing the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 in the first opening corresponding to the second sub-pixel 202, the first sub-layer 171 located on the side of the isolation pillar 141 corresponding to the second sub-pixel 202 can be further thinned.

[0081] In this way, please refer to Figure 4 , after performing subsequent processes, the thickness W3 of the first sub-layer 171 corresponding to the second sub-pixel 202 can be less than the thickness W1 of the first sub-layer 171 corresponding to the first sub-pixel 201.

[0082] Furthermore, in a possible implementation, the side of the isolation structure 140 corresponding to the second sub-pixel 202 includes at least a partially exposed area not covered by the first sub-layer 171. The second sub-pixel 202 is in electrical contact with the exposed area of the isolation structure 140. For example, the second electrode layer 160 corresponding to the second sub-pixel 202 extends from within the first opening to the side of the pixel defining layer 130 away from the array substrate 110 and is in electrical contact with the exposed area of the isolation structure 140.

[0083] That is, when etching away the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 within the first opening corresponding to the second sub-pixel 202, at least a part of the side surface of the isolation structure 140 needs to be exposed. In this way, when forming the second electrode layer 160 corresponding to the second sub-pixel 202 subsequently, the second electrode layer 160 can effectively contact the isolation structure 140 and thus be electrically connected.

[0084] Further, in a possible implementation, the isolation structure 140 includes a first metal layer, a second metal layer, and a third metal layer that are sequentially stacked from the direction close to the array substrate 110 to the direction away from the array substrate 110. For example, the material of the first metal layer may include molybdenum (Mo), the material of the second metal layer may include aluminum (Al), and the material of the third metal layer may include titanium (Ti).

[0085] In the first encapsulation layer 170 corresponding to the second sub-pixel 202, the first sub-layer 171 exposes at least a part of the first metal layer of the isolation structure 140. The second sub-pixel 202 is in electrical contact with the first metal layer.

[0086] For example, the second electrode layer 160 corresponding to the second sub-pixel 202 extends from within the first opening to the side of the pixel defining layer 130 away from the array substrate 110 and is in electrical contact with the first metal layer.

[0087] That is, when etching away the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 within the first opening corresponding to the second sub-pixel 202, the first metal layer on the side of the isolation structure 140 closest to the array substrate 110 is exposed. In this way, when forming the second electrode layer 160 corresponding to the second sub-pixel 202 subsequently, the second electrode layer 160 can effectively contact the first metal layer and thus be electrically connected.

[0088] In some possible implementations, the thickness of the first sub-layer 171 corresponding to the second sub-pixel may be to The thickness of the second sub-layer 172 corresponding to the second sub-pixel may be to

[0089] In some possible implementations, the first sub-pixel 201 includes sub-pixels of a first color, and the second sub-pixel 202 includes sub-pixels of a second color and / or a third color.

[0090] In some possible implementations, referring to Figure 5 , the display panel may further include a second encapsulation layer 180 and a third encapsulation layer 190.

[0091] The second encapsulation layer 180 is located on the side of the first encapsulation layer 170 away from the array substrate 110, and the third encapsulation layer 190 is located on the side of the second encapsulation layer 180 away from the array substrate 110.

[0092] Optionally, the materials of the first encapsulation layer 170 and the third encapsulation layer 190 may include inorganic materials; the material of the second encapsulation layer 180 may include organic materials.

[0093] Optionally, the first encapsulation layer 170 and the third encapsulation layer 190 may be formed by chemical vapor deposition, and the second encapsulation layer 180 may be formed by inkjet printing.

[0094] Please refer to Figure 6 , this embodiment also provides a manufacturing method of a display panel, and this method may include the following steps.

[0095] Step S110, provide an array substrate 110.

[0096] Step S120, sequentially form a first electrode layer 120 and an isolation structure 140 on one side of the array substrate 110. The first electrode layer 120 includes a plurality of first electrodes. The isolation structure 140 exposes the first electrodes through pixel openings, and the pixel openings include pixel openings corresponding to at least one first sub-pixel 201 and pixel openings corresponding to at least one second sub-pixel 202.

[0097] S130, form a light-emitting material layer 150, a second electrode layer 160, and a first sub-layer 171 of the first encapsulation layer 170 by means of blanket evaporation.

[0098] Please refer to Figure 7 , in this embodiment, after the isolation structure 140 and the first opening are fabricated, the light-emitting material layer 150 corresponding to the sub-pixels of the first color (i.e., the first sub-pixels 201), the second electrode layer 160, and the first sub-layer 171 of the first encapsulation layer 170 may be formed first by means of blanket evaporation.

[0099] Step S140, set a first etching protection layer 301, and the first etching protection layer 301 covers the first opening corresponding to the first sub-pixels 201 and exposes the first opening corresponding to the second sub-pixels 202.

[0100] Please refer to Figure 8 , in step S140, a photoresist may be set and the first etching protection layer 301 covering the first opening corresponding to the first sub-pixels 201 may be formed by means of exposure and development.

[0101] Step S150: Etch and remove the first encapsulation layer 170, the second electrode layer 160, and the light-emitting material layer 150 at the bottom of the pixel opening corresponding to the second sub-pixel 202, and retain at least a part of the first sub-layer 171 covering the side surface of the isolation structure 140 corresponding to the second sub-pixel 202.

[0102] Wherein, the bottom of the pixel opening is the side close to the array substrate 110 of the pixel opening.

[0103] Please refer to Figure 9 , after forming the first etching protection layer 301 in step S140, the inner layer of the pixel opening corresponding to the first sub-pixel 201 is protected by the first etching protection layer 301 from being etched. In this way, in step S150, only the light-emitting material layer 150, the second electrode layer 160, and the first sub-layer 171 at the bottom of the pixel opening corresponding to the second sub-pixel 202 can be etched and removed. At the same time, during the etching process, by controlling the etching selectivity or the etching time, at least a part of the first sub-layer 171 covering the side surface of the isolation structure 140 corresponding to the second sub-pixel 202 is not completely etched away, as shown in the circular dotted box in Figure 7 .

[0104] Since in step S150, when etching the first sub-layer 171, at least a part of the first sub-layer 171 covering the side surface of the isolation structure 140 corresponding to the second sub-pixel 202 is not completely etched away, the damage to the covered isolation structure 140 during the etching of this part of the first sub-layer 171 can be reduced, thereby improving the success rate of the effective lap joint between the subsequent second electrode layer 160 and the isolation structure 140.

[0105] Step S160: Form a second sub-layer 172 of the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 in the pixel opening corresponding to the second sub-pixel 202.

[0106] Please refer to Figure 10 , in the subsequent manufacturing process steps, the second sub-layer 172 of the light-emitting material layer 150, the second electrode layer 160, and the first encapsulation layer 170 can be sequentially formed in the pixel openings corresponding to other sub-pixels except the first sub-pixel 201 by means of whole-layer evaporation and etching. In this way, the first encapsulation layer 170 covering the side wall of the isolation structure 140 corresponding to the second sub-pixel 202 includes at least a part of the first sub-layer 171 and the second sub-layer 172, as shown in the circular dotted box in Figure 8 .

[0107] Further, in a possible implementation manner, in step S150, the first sub-layer 171, the second electrode layer 160, and the light-emitting material layer 150 corresponding to the second sub-pixel 202 may be etched for the first time to remove the first sub-layer 171, the second electrode layer 160, and the light-emitting material layer 150 inside the bottom of the pixel opening corresponding to the second sub-pixel 202.

[0108] Then, the first sub-layer 171 covered on the side of the isolation structure 140 corresponding to the second sub-pixel 202 is etched for the second time to thin or remove at least a part of the first sub-layer 171 covered on the side of the isolation structure 140 corresponding to the second sub-pixel 202.

[0109] Wherein, the etching rate of the first sub-layer 171 in the second etching is lower than the etching rate of the first sub-layer 171 in the first etching, and / or the etching time of the second etching is shorter than the etching time of the first etching.

[0110] That is, in step S150, the first sub-layer 171 can be etched for the first time to remove the first sub-layer 171 at the bottom of the pixel opening corresponding to the second sub-pixel 202 and on the side of the isolation structure 140 away from the array substrate 110, and then the first sub-layer 171 attached to the side wall of the isolation structure 140 corresponding to the second sub-pixel 202 is etched for the second time. By controlling the etching rate and / or the etching time, at least a part of the first sub-layer 171 covered on the side of the isolation structure 140 corresponding to the second sub-pixel 202 is thinned or removed.

[0111] In this process, by controlling the etching rate and / or the etching time, at least a part of the side of the isolation structure 140 can be exposed from the first sub-layer 171, so as to facilitate subsequent connection with the second electrode.

[0112] This embodiment further provides an electronic device. The electronic device includes the display panel provided in this application. The electronic device may include devices with display and touch functions such as mobile phones, tablet computers, smart wearable devices, televisions, laptop computers, and monitors.

[0113] In summary, for the display panel, the manufacturing method of the display panel, and the electronic device provided in this application, by retaining at least a part of the first encapsulation layer covered on the side of the isolation structure corresponding to the second sub-pixel, damage to the isolation structure caused by etching the first encapsulation layer can be reduced, the probability of effective connection between the subsequent second electrode layer and the isolation structure can be increased, and thus the lighting yield of the display panel can be improved.

[0114] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0115] The above-described embodiments merely represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the appended claims.

Claims

1. A display panel, characterized in that, The display panel includes: An array substrate; A first electrode layer located on one side of the array substrate, the first electrode layer including a plurality of first electrodes; An isolation structure located on the side of the array substrate where the first electrode layer is provided, the isolation structure exposing the first electrodes through pixel openings; the pixel openings include pixel openings corresponding to at least one first sub-pixel and pixel openings corresponding to at least one second sub-pixel; A light-emitting material layer and a second electrode layer located within the pixel openings, the second electrode layer overlapping with the isolation structure; A first encapsulation layer located on the side of the second electrode layer away from the array substrate, the first encapsulation layer extending from within the pixel openings along the side surface of the isolation structure to the side of the isolation structure away from the array substrate; the side surface of the isolation structure is the surface of the isolation structure facing the pixel openings; Wherein, the thickness of the portion of the first encapsulation layer corresponding to the first sub-pixel attached to the side surface of the isolation structure is less than the thickness of the portion of the first encapsulation layer corresponding to the second sub-pixel attached to the side surface of the isolation structure.

2. The display panel according to claim 1, characterized in that, The display panel further includes a pixel defining layer located on the side of the first electrode layer away from the array substrate, the pixel defining layer including a plurality of second openings respectively exposing the plurality of first electrodes; Wherein, the isolation structure is located on the side of the pixel defining layer away from the array substrate, and the orthographic projection of the isolation structure on the array substrate is located within the orthographic projection of the pixel defining layer on the array substrate; the isolation structure includes a plurality of first openings, and the first openings of the isolation structure communicate with the second openings of the pixel defining layer to form the pixel openings; the light-emitting material layer and the second electrode layer are located within the pixel openings.

3. The display panel according to claim 1, characterized in that, The first encapsulation layer corresponding to the first sub-pixel includes a first sub-layer; the first encapsulation layer corresponding to the second sub-pixel includes a first sub-layer and a second sub-layer. In the first encapsulation layer corresponding to the second sub-pixel, the first sub-layer covers at least part of the side surface of the isolation structure, and the second sub-layer extends from within the pixel openings corresponding to the second sub-pixel along the side surface of the first sub-layer and / or the isolation structure to the side of the isolation structure away from the array substrate.

4. The display panel according to claim 3, characterized in that, The thickness of the first sub-layer corresponding to the second sub-pixel is less than the thickness of the first sub-layer corresponding to the first sub-pixel.

5. The display panel according to claim 4, characterized in that, The side surface of the isolation structure corresponding to the second sub-pixel includes at least part of an exposed area not covered by the first sub-layer; the second electrode layer corresponding to the second sub-pixel is in electrical contact with the exposed area of the isolation structure.

6. The display panel according to claim 5, characterized in that, The isolation structure includes a first metal layer, a second metal layer, and a third metal layer stacked in sequence from the direction close to the array substrate to the direction away from the array substrate; in the first encapsulation layer corresponding to the second sub-pixel, the first sub-layer exposes at least part of the first metal layer of the isolation structure; the second electrode layer corresponding to the second sub-pixel is in electrical contact with the first metal layer.

7. The display panel according to claim 6, characterized in that, The thickness of the first sub-layer corresponding to the second sub-pixel is to Preferably, the thickness of the second sublayer corresponding to the second sub-pixel is to 8. The display panel according to claim 7, characterized in that, The first sub-pixel includes sub-pixels of a first color, and the second sub-pixel includes sub-pixels of a second color and / or a third color.

9. The display panel according to any one of claims 1-8, characterized in that, The display panel further includes: A second encapsulation layer located on a side of the first encapsulation layer away from the array substrate; A third encapsulation layer located on a side of the second encapsulation layer away from the array substrate; Preferably, the materials of the first encapsulation layer and the third encapsulation layer include inorganic materials; the material of the second encapsulation layer includes an organic material; Preferably, the first encapsulation layer and the third encapsulation layer are formed by chemical vapor deposition, and the second encapsulation layer is formed by inkjet printing.

10. A manufacturing method of a display panel, characterized in that, The method includes: Providing an array substrate; Sequentially forming a first electrode layer and an isolation structure on one side of the array substrate; the first electrode layer includes a plurality of first electrodes; the isolation structure exposes the first electrodes through pixel openings; the pixel openings include pixel openings corresponding to at least one first sub-pixel and pixel openings corresponding to at least one second sub-pixel; Forming a light-emitting material layer, a second electrode layer, and a first sub-layer of the first encapsulation layer by means of whole-layer evaporation; Setting a first etching protection layer, the first etching protection layer covering the pixel openings corresponding to the first sub-pixels and exposing the pixel openings corresponding to the second sub-pixels; Etching and removing the first sub-layer, the second electrode layer, and the light-emitting material layer at the bottom of the pixel openings corresponding to the second sub-pixels, and retaining at least part of the first sub-layer covering the side of the isolation structure corresponding to the second sub-pixels; the bottom of the pixel openings is the side of the pixel openings close to the array substrate; Forming a light-emitting material layer, a second electrode layer, and a second sub-layer of the first encapsulation layer in the pixel openings corresponding to the second sub-pixels, and the second sub-layer extends from within the pixel openings to a side of the isolation structure away from the array substrate.

11. The manufacturing method of the display panel according to claim 10, characterized in that, The step of etching and removing the first sub-layer, the second electrode layer, and the light-emitting material layer at the bottom of the pixel openings corresponding to the second sub-pixels and retaining at least part of the first sub-layer covering the side of the isolation structure corresponding to the second sub-pixels includes: Performing a first etching on the first sub-layer, the second electrode layer, and the light-emitting material layer corresponding to the second sub-pixels to remove the first sub-layer, the second electrode layer, and the light-emitting material layer at the bottom of the pixel openings corresponding to the second sub-pixels; Performing a second etching on the first encapsulation layer covering the side of the isolation structure corresponding to the second sub-pixels to thin or remove at least part of the first sub-layer covering the side of the isolation structure corresponding to the second sub-pixels; Preferably, the etching rate of the first sub-layer in the second etching is lower than the etching rate of the first sub-layer in the first etching, and / or the etching time of the second etching is shorter than the etching time of the first etching.

12. An electronic device, characterized in that, The electronic device includes the display panel according to any one of claims 1-9.

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