Zirconium element doping-based indium oxide film thermocouple and preparation method thereof
By using zirconium-doped indium oxide materials and screen printing technology in film thermocouples, the problem of poor performance of existing film thermocouples under high temperature conditions is solved, and the stability and reliability of high temperature measurement in extreme environments are achieved.
Patent Information
- Application Number
- CN202510313843.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-17
- Publication Date
- 2025-06-20
AI Technical Summary
Existing thin-film thermocouples have poor performance under high temperature conditions and a narrow temperature measurement range, making it difficult to meet the temperature measurement needs in extreme environments.
The first indium oxide film thermocouple based on zirconium element doping is prepared on the substrate by screen printing technology, and sintered at high temperature to form a stable thermocouple.
It has achieved long-term and stable operation at temperatures above 1500℃, strong resistance to high-temperature oxidation failure, and can meet the high-temperature measurement needs in extreme environments.
Smart Images
Figure CN120187267A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of thin film sensors, and relates to an indium oxide thin film thermocouple doped with zirconium element and a preparation method thereof. Background Art
[0002] In the two fields with extremely high environmental requirements, namely aerospace tests and the iron and steel metallurgy industry, in order to ensure the effective research and development of key equipment, implement strict safety monitoring, and design an efficient and reliable cooling system, it is crucial to accurately measure the temperatures on the surface of turbine blades, the inner wall of combustion chambers, and the exhaust gas emission areas. These temperature data not only help to understand the performance of equipment in high-intensity working environments, but also provide valuable basis for optimizing designs and preventing failures. Compared with traditional linear and block thermocouples, thin film thermocouples have the characteristics of small heat capacity, small volume, and fast response speed, and can capture instantaneous temperature changes.
[0003] At present, the research on thermocouple materials has been relatively mature. In the field of high-temperature testing, noble metals such as platinum and rhodium are usually used as thin film materials, but due to problems such as high cost and easy oxidation. In the existing oxide thin film thermocouple material system, indium oxide and indium tin oxide have become materials for high-temperature measurement. However, the tin element in indium tin oxide is prone to volatilization under high-temperature conditions, resulting in material changes and a sharp decline in performance. Especially when the temperature exceeds 1300 °C, the material is prone to failure and it is difficult to measure higher temperatures. Therefore, it is urgent to develop a thin film thermocouple that can measure ultra-high temperatures to meet the temperature measurement requirements in extreme environments. Summary of the Invention
[0004] The purpose of the present invention is to provide an indium oxide thin film thermocouple doped with zirconium element and a preparation method thereof, so as to solve the technical problems in the prior art that the high-temperature performance of thin film thermocouples is poor, the temperature measurement range is narrow, and it is difficult to meet the temperature measurement requirements in extreme environments.
[0005] To achieve the above object, the present invention adopts the following technical solutions: In the first aspect, the present invention provides an indium oxide thin film thermocouple doped with zirconium element, including a substrate, on which a first indium oxide thin film and a second indium oxide thin film are symmetrically arranged; one end of the first indium oxide thin film and one end of the second indium oxide thin film overlap as a temperature sensitive area; the other end of the first indium oxide thin film and the other end of the second indium oxide thin film do not contact and serve as cold junctions; the second indium oxide thin film is an indium oxide thin film doped with zirconium element.
[0006] In the second aspect, the present invention provides a preparation method of the indium oxide thin film thermocouple doped with zirconium element, including the following steps: Prepare a first printing paste and a second printing paste respectively; By means of screen printing technology, a first indium oxide thin film is prepared on a substrate using a first printing paste, and a second indium oxide thin film is prepared on the substrate using a second printing paste to obtain a device; The obtained device is sintered to finally obtain an indium oxide thin film thermocouple doped with zirconium element.
[0007] Furthermore, the preparation method of the first printing paste includes: Mix terpineol, glass powder, ethyl cellulose and indium oxide material to obtain the first printing paste.
[0008] Furthermore, the mass ratio of terpineol to indium oxide material is 1:0.1 - 10; the glass powder accounts for 0% - 35% of the mass of the indium oxide material; the ethyl cellulose accounts for 5% - 30% of the mass of the indium oxide material.
[0009] Furthermore, the preparation method of the second printing paste includes: Mix terpineol, glass powder, ethyl cellulose and indium oxide material doped with zirconium element to obtain the second printing paste.
[0010] Furthermore, the preparation process of the indium oxide material doped with zirconium element is: adding zirconia or metallic zirconium to the indium oxide material to configure the indium oxide material doped with zirconium element.
[0011] Furthermore, the particle sizes of the indium oxide material, zirconia and zirconium are all 10 nm - 1 mm.
[0012] Furthermore, the mass ratio of terpineol to indium oxide material doped with zirconium element is 1:0.1 - 10; the glass powder accounts for 0% - 35% of the mass of the indium oxide material doped with zirconium element; the ethyl cellulose accounts for 5% - 30% of the mass of the indium oxide material doped with zirconium element; the zirconia or metallic zirconium accounts for 0.1% - 50% of the mass of the indium oxide material doped with zirconium element.
[0013] Furthermore, the step of obtaining a device by means of screen printing technology, preparing a first indium oxide thin film on a substrate using a first printing paste, and preparing a second indium oxide thin film on the substrate using a second printing paste specifically includes: Clean the substrate; By means of screen printing technology, pattern the first indium oxide thin film on the substrate using the first printing paste and place it on a heating table for curing; Pattern the second indium oxide thin film on the substrate using the second printing paste and place it on a heating table for curing to obtain a device.
[0014] Further, the sintering process specifically includes: sintering for 0.1 h to 10 h in a vacuum environment or an air environment within a temperature range of 500°C to 1800°C.
[0015] Compared with the prior art, the present invention has the following beneficial effects: The present invention discloses a zirconium-doped indium oxide thin film thermocouple and a preparation method thereof. In view of the measurement requirements in the current high-temperature field, a thin film thermocouple based on a zirconium-doped indium oxide composite material is researched and designed. In the high-temperature test field, common precious metal thin film materials will undergo oxidation failure and other problems during long-term operation. Among common oxide materials, indium tin oxide materials cannot work stably above 1300°C for a long time due to the easy volatilization of tin elements. Materials such as zirconium and zirconium oxide have melting points above 1800°C and have better high-temperature stability. The zirconium-doped indium oxide material has thermoelectric properties and can exist for a long time at 1500°C. Utilizing the characteristic that its Seebeck coefficient is different from that of the indium oxide thin film, a thermoelectric signal is stably output; through screen printing technology, a thin film thermocouple based on a zirconium-doped indium oxide composite material is prepared on a substrate. This thin film thermocouple can be used for high-temperature measurement in extreme environments, can work stably for a long time at temperatures above 1500°C, and has strong resistance to high-temperature oxidation failure. Moreover, doping an appropriate amount of zirconium oxide or zirconium into indium oxide can change the carrier concentration of indium oxide, form a Seebeck coefficient difference with indium oxide with different doping ratios, and form a thermoelectric material. Secondly, the present invention uses screen printing technology to prepare indium oxide thin films, and the method is simple and the cost is low. Description of the Drawings
[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.
[0017] Figure 1 It is a schematic structural diagram of an embodiment of the present invention; Figure 2 It is a schematic cross-sectional structure diagram of the middle of the temperature-sensitive region of an embodiment of the present invention.
[0018] Wherein: 1 - substrate; 2 - first indium oxide thin film; 3 - second indium oxide thin film; 4 - temperature-sensitive region; 5 - cold end. Specific Embodiments
[0019] To enable those skilled in the art to understand the features and effects of the present invention, the following provides a general description and definition of the terms and phrases mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used herein shall have the ordinary meanings understood by those skilled in the art for the present invention. In case of conflicts, the definitions in this specification shall prevail.
[0020] The theories or mechanisms described and disclosed herein, whether right or wrong, shall not in any way limit the scope of the present invention, that is, the content of the present invention can be implemented without being limited by any specific theory or mechanism.
[0021] In this document, all features defined in the form of numerical ranges or percentage ranges, such as numerical values, quantities, contents, and concentrations, are only for the sake of brevity and convenience. Accordingly, the description of numerical ranges or percentage ranges should be regarded as having covered and specifically disclosed all possible sub-ranges and individual numerical values (including integers and fractions) within the ranges.
[0022] In this document, unless otherwise specified, the terms "comprising", "including", "containing", "having", or similar terms cover the meanings of "consisting of" and "consisting essentially of". For example, "A comprises a" covers the meanings of "A comprises a and others" and "A consists only of a".
[0023] In this document, for the sake of brevity of description, all possible combinations of all technical features in each embodiment or example are not described. Therefore, as long as there is no contradiction in the combination of these technical features, the technical features in each embodiment or example can be combined arbitrarily, and all possible combinations should be considered as within the scope described in this specification.
[0024] The following further describes the present invention in detail with reference to the accompanying drawings: See Figure 1 And Figure 2, an embodiment of the present invention discloses an indium oxide thin film thermocouple based on zirconium element doping, including a substrate 1, on which a first indium oxide thin film 2 and a second indium oxide thin film 3 are symmetrically arranged; one end of the first indium oxide thin film 2 and one end of the second indium oxide thin film 3 overlap as a temperature sensitive area 4; the other ends of the first indium oxide thin film 2 and the second indium oxide thin film 3 do not contact and serve as the cold end; the second indium oxide thin film 3 is an indium oxide thin film doped with zirconium element. In this embodiment, an indium oxide material doped with zirconium element is used as the thermoelectric material. Here, the indium oxide material doped with zirconium element can also form a thin film thermocouple with other thermoelectric materials; in addition to preparing a thin film thermocouple, the thermoelectric material can also be used for power generation energy recovery as a thermoelectric material. In the indium oxide thin film of the present invention, a material containing zirconium element such as zirconia or metallic zirconium is doped. The melting points of zirconium, zirconia and other materials are above 1800 °C, having better high temperature stability. The thin film thermocouple can be used for high temperature measurement in extreme environments, can work stably for a long time at temperatures above 1500 °C, and has strong resistance to high temperature oxidation failure. And the first indium oxide thin film 2 and the second indium oxide thin film 3 on the substrate 1 of the present invention are both prepared by screen printing process, with simple method and low cost, and good application prospects.
[0025] An embodiment of the present invention discloses a preparation method of an indium oxide thin film thermocouple based on zirconium element doping, including the following steps: S1, prepare a first printing paste and a second printing paste respectively; S101, mix terpineol, glass powder, ethyl cellulose and indium oxide material to obtain the first printing paste.
[0026] Among them, the mass ratio of terpineol to indium oxide material is 1:0.1 - 10; the glass powder accounts for 0% - 35% of the mass of the indium oxide material; the ethyl cellulose accounts for 5% - 30% of the mass of the indium oxide material.
[0027] S102, mix terpineol, glass powder, ethyl cellulose and indium oxide material doped with zirconium element to obtain the second printing paste.
[0028] In a feasible embodiment of the present invention, the preparation process of the indium oxide material doped with zirconium element is: add zirconia or metallic zirconium to the indium oxide material to configure an indium oxide material doped with zirconium element. The particle sizes of the indium oxide material, zirconia and zirconium are all 10 nm - 1 mm.
[0029] Among them, the mass ratio of terpineol to indium oxide material doped with zirconium element is 1:0.1 - 10; the glass powder accounts for 0% - 35% of the mass of the indium oxide material doped with zirconium element; the ethyl cellulose accounts for 5% - 30% of the mass of the indium oxide material doped with zirconium element; the zirconia or metallic zirconium accounts for 0.1% - 50% of the mass of the indium oxide material doped with zirconium element.
[0030] S2. By means of screen printing technology, prepare a first indium oxide thin film 2 on the substrate 1 using a first printing paste, and prepare a second indium oxide thin film 3 on the substrate 1 using a second printing paste to obtain a device. S201. Clean the substrate 1. S202. By means of screen printing technology, pattern and prepare the first indium oxide thin film 2 on the substrate 1 using the first printing paste, and place it on a heating table for curing. S203. Pattern and prepare the second indium oxide thin film 3 on the substrate 1 using the second printing paste, and place it on a heating table for curing to obtain a device.
[0031] S3. Sinter the obtained device to finally obtain an indium oxide thin film thermocouple doped with zirconium element.
[0032] In this step, the sintering process specifically includes: sintering for 0.1 h to 10 h in a vacuum environment or an air environment within a temperature range of 500 °C to 1800 °C.
[0033] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of this application.
[0034] Conventional instrument equipment in the art is used in the following embodiments. For the experimental methods without specific conditions indicated in the following embodiments, they are usually carried out under conventional conditions or according to the conditions recommended by the manufacturer. Various raw materials are used in the following embodiments. Unless otherwise stated, commercially available products are used, and their specifications are conventional specifications in the art. In the specification of the present invention and the following embodiments, unless otherwise specified, "%" represents weight percentage, "parts" represents weight parts, and the ratio represents weight ratio.
[0035] Example 1: 1) Clean the substrate. 2) Mix a terpineol solvent, glass powder, ethyl cellulose and indium oxide material to obtain a first printing paste, and mix a terpineol solvent, glass powder, ethyl cellulose and indium oxide material doped with zirconium element to obtain a second printing paste; wherein, the mass ratio of terpineol to indium oxide material or indium oxide material doped with zirconium element is 1:3, ethyl cellulose accounts for 5% of the mass of indium oxide material or indium oxide material doped with zirconium element, and the mass of glass powder accounts for 30% of the mass of indium oxide material or indium oxide material doped with zirconium element.
[0036] Moreover, the indium oxide material doped with zirconium element is prepared by adding zirconium oxide to the indium oxide material, and the indium oxide material doped with zirconium element is obtained. Zirconium oxide accounts for 2% of its mass. The particle sizes of both the indium oxide material and zirconium oxide are 10 nm.
[0037] 3) Using screen printing technology, the first indium oxide thin film 2 is patterned on the device obtained in step 2 by using a screen printing stencil, and then placed on a heating table for curing; 4) Using screen printing technology, the second indium oxide thin film 3 is patterned on the device obtained in step 3 by using a screen printing stencil, and then placed on a heating table for curing; 5) The device obtained in step 4 is sintered for 1 h in a vacuum environment or an air environment within a temperature range of 1000 °C to improve the bonding force between the first indium oxide thin film 2, the second indium oxide thin film 3 and the substrate, as well as the tissue density and carrier concentration of the thin films, thereby obtaining a zirconium element-doped indium oxide thin film thermocouple based on the screen printing process.
[0038] Example 2: 1) Clean the substrate; 2) Mix terpineol solvent, glass powder, ethyl cellulose and indium oxide material to obtain the first printing paste, and mix terpineol solvent, glass powder, ethyl cellulose and indium oxide material doped with zirconium element to obtain the second printing paste; wherein, the mass ratio of terpineol to indium oxide material or indium oxide material doped with zirconium element is 1:5, ethyl cellulose accounts for 30% of the mass of indium oxide material or indium oxide material doped with zirconium element, and glass powder accounts for 25% of the mass of indium oxide material or indium oxide material doped with zirconium element.
[0039] Moreover, the indium oxide material doped with zirconium element is prepared by adding zirconium oxide to the indium oxide material, and the indium oxide material doped with zirconium element is obtained. Zirconium oxide accounts for 10% of its mass. The particle sizes of both the indium oxide material and zirconium oxide are 1 mm.
[0040] 3) Using screen printing technology, the first indium oxide thin film 2 is patterned on the device obtained in step 2 by using a screen printing stencil, and then placed on a heating table for curing; 4) Using screen printing technology, the second indium oxide thin film 3 is patterned on the device obtained in step 3 by using a screen printing stencil, and then placed on a heating table for curing; 5) The device obtained in step 4 is sintered for 10 h in a vacuum environment or an air environment within a temperature range of 1700 °C to improve the bonding force between the first indium oxide thin film 2, the second indium oxide thin film 3 and the substrate, as well as the tissue density and carrier concentration of the thin films, thereby obtaining a zirconium element-doped indium oxide thin film thermocouple based on the screen printing process.
[0041] Example 3: 1) Clean the substrate; 2) Mix the terpineol solvent, glass powder, ethyl cellulose, and indium oxide material to obtain the first printing paste, and mix the terpineol solvent, glass powder, ethyl cellulose, and indium oxide material doped with zirconium element to obtain the second printing paste; wherein, the mass ratio of terpineol to indium oxide material or indium oxide material doped with zirconium element is 1:9, ethyl cellulose accounts for 20% of the mass of indium oxide material or indium oxide material doped with zirconium element, and the mass of glass powder accounts for 18% of the mass of indium oxide material or indium oxide material doped with zirconium element.
[0042] Moreover, the indium oxide material doped with zirconium element is: adding zirconium oxide to the indium oxide material to prepare the indium oxide material doped with zirconium element, and zirconium oxide accounts for 40% of its mass. The particle sizes of the indium oxide material and zirconium oxide are both 1×10 2 nm.
[0043] 3) Use screen printing technology to pattern the first indium oxide thin film 2 on the device obtained in step 2 with a screen printing stencil, and place it on a heating table for curing; 4) Use screen printing technology to pattern the second indium oxide thin film 3 on the device obtained in step 3 with a screen printing stencil, and place it on a heating table for curing; 5) Sinter the device obtained in step 4 in a vacuum environment or air environment within the temperature range of 900 °C for 9 h to improve the bonding force between the first indium oxide thin film 2, the second indium oxide thin film 3 and the substrate, and the tissue density and carrier concentration of the thin film, so as to obtain a zirconium element-doped indium oxide thin film thermocouple based on screen printing technology.
[0044] Example 4: 1) Clean the substrate; 2) Mix the terpineol solvent, glass powder, ethyl cellulose, and indium oxide material to obtain the first printing paste, and mix the terpineol solvent, glass powder, ethyl cellulose, and indium oxide material doped with zirconium element to obtain the second printing paste; wherein, the mass ratio of terpineol to indium oxide material or indium oxide material doped with zirconium element is 1:0.9, ethyl cellulose accounts for 25% of the mass of indium oxide material or indium oxide material doped with zirconium element, and the mass of glass powder accounts for 14% of the mass of indium oxide material or indium oxide material doped with zirconium element.
[0045] Moreover, the indium oxide material doped with zirconium element is: adding zirconium oxide to the indium oxide material to prepare the indium oxide material doped with zirconium element, and zirconium oxide accounts for 20% of its mass. The particle sizes of the indium oxide material and zirconium oxide are both 1×10 3 nm.
[0046] 3) Using screen printing technology, the first indium oxide thin film 2 is patterned on the device obtained in step 2 by using a screen printing stencil, and then placed on a heating table for curing; 4) Using screen printing technology, the second indium oxide thin film 3 is patterned on the device obtained in step 3 by using a screen printing stencil, and then placed on a heating table for curing; 5) The device obtained in step 4 is sintered in a vacuum environment or an air environment within a temperature range of 600 °C for 5 h to improve the bonding force between the first indium oxide thin film 2, the second indium oxide thin film 3 and the substrate, as well as the tissue density and carrier concentration of the thin films, thereby obtaining a zirconium element-doped indium oxide thin film thermocouple based on the screen printing process.
[0047] Example 5: 1) Clean the substrate; 2) Mix the terpineol solvent, glass powder, ethyl cellulose and indium oxide material to obtain the first printing paste, and mix the terpineol solvent, glass powder, ethyl cellulose and zirconium element-doped indium oxide material to obtain the second printing paste; wherein, the mass ratio of terpineol to the indium oxide material or the zirconium element-doped indium oxide material is 1:1, ethyl cellulose accounts for 10% of the mass of the indium oxide material or the zirconium element-doped indium oxide material, and the mass of glass powder accounts for 9% of the mass of the indium oxide material or the zirconium element-doped indium oxide material.
[0048] Moreover, the zirconium element-doped indium oxide material is prepared by adding zirconia to the indium oxide material, and zirconia accounts for 2% of its mass. The particle sizes of the indium oxide material and zirconia are both 1×10 4 nm.
[0049] 3) Using screen printing technology, the first indium oxide thin film 2 is patterned on the device obtained in step 2 by using a screen printing stencil, and then placed on a heating table for curing; 4) Using screen printing technology, the second indium oxide thin film 3 is patterned on the device obtained in step 3 by using a screen printing stencil, and then placed on a heating table for curing; 5) The device obtained in step 4 is sintered in a vacuum environment or an air environment within a temperature range of 1500 °C for 6 h to improve the bonding force between the first indium oxide thin film 2, the second indium oxide thin film 3 and the substrate, as well as the tissue density and carrier concentration of the thin films, thereby obtaining a zirconium element-doped indium oxide thin film thermocouple based on the screen printing process.
[0050] Example 6: 1) Clean the substrate; 2) Mix the terpineol solvent, glass powder, ethyl cellulose, and indium oxide material to obtain the first printing paste. Mix the terpineol solvent, glass powder, ethyl cellulose, and indium oxide material doped with zirconium element to obtain the second printing paste. Among them, the mass ratio of terpineol to indium oxide material or indium oxide material doped with zirconium element is 1:8, ethyl cellulose accounts for 10% of the mass of indium oxide material or indium oxide material doped with zirconium element, and the mass of glass powder accounts for 3% of the mass of indium oxide material or indium oxide material doped with zirconium element.
[0051] Moreover, the indium oxide material doped with zirconium element is prepared by adding zirconia to the indium oxide material, and zirconia accounts for 25% of its mass. The particle sizes of the indium oxide material and zirconia are both 1×10 5 nm.
[0052] 3) Use screen printing technology to pattern the first indium oxide thin film 2 on the device obtained in step 2 by using a screen printing stencil, and place it on a heating table for curing. 4) Use screen printing technology to pattern the second indium oxide thin film 3 on the device obtained in step 3 by using a screen printing stencil, and place it on a heating table for curing. 5) Sinter the device obtained in step 4 in a vacuum environment or air environment within the temperature range of 1200 °C for 3 h to improve the bonding force between the first indium oxide thin film 2, the second indium oxide thin film 3 and the substrate, and the tissue density and carrier concentration of the thin film, so as to obtain a zirconium element-doped indium oxide thin film thermocouple based on the screen printing process.
[0053] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. A zirconium-doped indium oxide thin film thermocouple, characterized in that: The invention comprises a substrate (1), on which a first indium oxide film (2) and a second indium oxide film (3) are symmetrically arranged; one end of the first indium oxide film (2) and one end of the second indium oxide film (3) overlap to form a temperature sensitive area (4); the other end of the first indium oxide film (2) and the other end of the second indium oxide film (3) are not in contact and serve as a cold end; and the second indium oxide film (3) is a zirconium-doped indium oxide film.
2. A method for preparing the zirconium-doped indium oxide thin film thermocouple according to claim 1, characterized in that: The following steps are involved: preparing a first printing paste and a second printing paste respectively; Using a screen printing technique, a first printing paste is used to prepare a first indium oxide thin film (2) on a substrate (1), and a second printing paste is used to prepare a second indium oxide thin film (3) on the substrate (1), thereby obtaining a device; The obtained device is sintered to finally obtain a zirconium-doped indium oxide thin film thermocouple.
3. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 2, characterized in that: The method for preparing the first printing paste comprises: The first printing paste is obtained by mixing pinene alcohol, glass powder, ethyl cellulose and indium oxide material.
4. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 3, characterized in that: The mass ratio of the pine alcohol to the indium oxide material is 1:0.1-10; the glass powder accounts for 0%-35% of the mass of the indium oxide material; and the ethyl cellulose accounts for 5%-30% of the mass of the indium oxide material.
5. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 2, characterized in that: The preparation method of the second printing paste comprises: The second printing paste is obtained by mixing pinene alcohol, glass powder, ethyl cellulose and zirconium-doped indium oxide material.
6. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 5, characterized in that: The preparation process of the zirconium-doped indium oxide material is as follows: zirconium oxide or metal zirconium is added to the indium oxide material to prepare the zirconium-doped indium oxide material.
7. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 6, characterized in that: The particle sizes of the indium oxide material, zirconium oxide and zirconium are all 10nm-1mm.
8. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 5, characterized in that: The mass ratio of the pine alcohol to the zirconium-doped indium oxide material is 1:0.1-10; the glass powder accounts for 0%-35% of the mass of the zirconium-doped indium oxide material; the ethyl cellulose accounts for 5%-30% of the mass of the zirconium-doped indium oxide material; and the zirconium oxide or metallic zirconium accounts for 0.1%-50% of the mass of the zirconium-doped indium oxide material.
9. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 2, characterized in that: The step of preparing a first indium oxide film (2) on a substrate (1) using a first printing paste and preparing a second indium oxide film (3) on the substrate (1) using a second printing paste by screen printing technology to obtain a device specifically comprises: Cleaning the substrate (1); Using a screen printing technique, a first printing paste is used to pattern a first indium oxide film (2) on a substrate (1), and the film is placed on a heating table for curing; A second indium oxide film (3) is patterned on a substrate (1) using a second printing paste, and is placed on a heating platform for curing to obtain a device.
10. The method for preparing a zirconium-doped indium oxide thin film thermocouple according to claim 2, characterized in that: The sintering process specifically includes: sintering for 0.1h to 10h in a vacuum environment or an air environment within a temperature range of 500°C to 1800°C.