Wafer edge washing device and wafer edge washing method

Abstract

The invention provides a wafer edge washing device and a wafer edge washing method, and the wafer edge washing device comprises a bearing platform which is used for bearing a wafer and can drive the wafer to rotate; the mechanical arm is arranged close to the bearing table, a first nozzle and a second nozzle are arranged on the mechanical arm, the first nozzle is used for spraying a cleaning solvent to the edge of the wafer, and the second nozzle is used for spraying inert gas to the edge of the wafer; the controller is electrically connected with the first nozzle, the second nozzle and the mechanical arm; in the working state, the controller controls the mechanical arm to move so that the first nozzle and the second nozzle can spray a cleaning solvent and spray inert gas towards the edge of the wafer, and when the notch of the wafer rotates to be close to the first nozzle and the second nozzle, the controller controls the flow of the first nozzle to be reduced and controls the air pressure of the second nozzle to be increased. According to the wafer edge washing device provided by the invention, the condition of back splashing in the wafer edge washing process is avoided, and the reliability of wafer edge washing is improved, so that the yield of wafers is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to a wafer edge cleaning device and a method for cleaning the wafer edge. Background Art

[0002] During the photoresist spin coating process, most of the photoresist is rotated to the edge of the wafer. Due to the relatively high gas flow rate at the edge of the wafer, the photoresist at the edge of the wafer is more likely to evaporate and solidify to form a raised structure (Edge Bead). In addition, due to surface tension, a small amount of photoresist will flow along the raised edge to the back of the wafer, causing contamination of the wafer. When the contaminated wafer passes through the baking unit, the solidified photoresist will fall off and contaminate the robotic arm and other subsequent process equipment. In addition, the photoresist on the back will affect the focusing during exposure and the formation of patterns.

[0003] Currently, there are usually two methods for removing the photoresist at the edge of the wafer. One is that there is a special nozzle for spraying solvent in the coating unit to clean the raised structure at the edge of the wafer. The other is to use edge exposure and then wash it off with the developer to achieve the purpose of edge removal. However, due to the existence of notches at the edge of the wafer, during the edge cleaning process of these two methods, when the solvent hits the notch at the edge of the high-speed rotating wafer, it will splash back into the wafer, and hitting the inner wall around for isolating the photoresist will also cause splashing, thus affecting the yield of the wafer. Summary of the Invention

[0004] The purpose of the present invention is to provide a wafer edge cleaning device and a method for cleaning the wafer edge, to avoid splashing during the wafer edge cleaning process, improve the reliability of wafer edge cleaning, and thus improve the yield of the wafer.

[0005] To achieve the above purpose, in the first aspect, the present invention provides a wafer edge cleaning device, including: A carrier stage for carrying the wafer and capable of driving the wafer to rotate; A robotic arm disposed close to the carrier stage. The robotic arm is provided with a first nozzle and a second nozzle. The first nozzle is used for spraying a cleaning solvent towards the edge of the wafer, and the second nozzle is used for jetting an inert gas towards the edge of the wafer; A controller electrically connected to the first nozzle, the second nozzle and the robotic arm; In the working state, the controller controls the movement of the robotic arm so that the first nozzle and the second nozzle spray the cleaning solvent and jet the inert gas towards the edge of the wafer. When the notch of the wafer rotates close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease and the air pressure of the second nozzle to increase. The beneficial effects of the wafer edge cleaning device provided by the present invention are as follows: By providing a first nozzle and a second nozzle on the robotic arm, the first nozzle sprays a cleaning solvent towards the edge of the wafer, and in cooperation with the second nozzle, an inert gas is ejected towards the edge of the wafer. When the notch of the wafer rotates close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease, preventing the cleaning solvent from splashing back to the back of the wafer through the notch. At this time, the spraying of the cleaning solvent by the first nozzle mainly serves to moisten the photoresist at the notch of the wafer. The purpose of controlling the increase in the air pressure of the second nozzle is to compensate for the possible problem of incomplete removal of the photoresist caused by the decrease in the flow rate of the first nozzle. Thus, through the cooperation of the first nozzle and the second nozzle, the situation of splashing back during the wafer edge cleaning process is avoided, and the reliability of wafer edge cleaning is ensured, improving the yield of the wafer.

[0006] In some embodiments, it further includes an identifier electrically connected to the controller; The identifier is spaced apart from the carrier stage and corresponds to the positions of the first nozzle and the second nozzle in the working state. The identifier is used to identify the notch of the wafer; The controller can calculate the time period when the notch of the wafer approaches the first nozzle and the second nozzle based on the notch position of the wafer identified by the identifier and the rotation speed of the wafer. The beneficial effects are as follows: By providing an identifier to identify the notch position of the wafer and combining with the rotation speed of the wafer, the time period when the notch of the wafer approaches the first nozzle and the second nozzle during wafer rotation can be calculated, so as to accurately control and adjust the first nozzle and the second nozzle within this time period, thereby improving the effect of wafer edge cleaning.

[0007] In some embodiments, the wafer edge cleaning device further includes a base disposed close to the carrier stage; The robotic arm is disposed on the base and can move along the extending direction of the base to move the robotic arm closer to or farther away from the carrier stage. The beneficial effects are as follows: By providing a base to control the robotic arm to approach or move away from the carrier stage, it is avoided to affect the progress of other process steps in the non-edge cleaning working state.

[0008] In some embodiments, the wafer edge cleaning device further includes a cleaning member disposed on the base, and the cleaning member has a cleaning tank; A telescopic mechanism is further disposed on the base, and the telescopic mechanism can move along the extending direction of the base; One end of the robotic arm is disposed on the telescopic mechanism; In the non-working state, the base drives the telescopic mechanism and the robotic arm to move to the cleaning member, and the telescopic mechanism retracts so that the first nozzle and the second nozzle are located in the cleaning tank. The beneficial effect is that by arranging the cleaning member on the base, in the non-working state, the base drives the telescopic mechanism and the robotic arm to move to the cleaning member, and the telescopic mechanism retracts so that the first nozzle and the second nozzle are located in the cleaning tank, avoiding contamination of the first nozzle and the second nozzle.

[0009] In some embodiments, the controller controls and adjusts the flow rate range of the first nozzle when spraying the cleaning solvent to be 0 - 30 ml / min, and the controller controls and adjusts the air pressure range of the second nozzle when injecting the inert gas to be 10 - 50 kPa.

[0010] In some embodiments, with the center of the carrier table as the origin, it is set that the identifier is located in the 0° direction of the carrier table; In the working state, when the carrier table drives the wafer to rotate so that the position where the notch of the wafer is located is between -30° and 30°, the controller controls the flow rate of the first nozzle to decrease, and controls the air pressure of the second nozzle to increase.

[0011] In a second aspect, the present invention provides a method for edge cleaning of a wafer, using the wafer edge cleaning device described above to perform edge cleaning on the wafer. The method includes: Fix the wafer on the carrier table; The controller controls the movement of the robotic arm so that the first nozzle and the second nozzle face the edge of the wafer; In the working state, the carrier table drives the wafer to rotate, and the controller controls the first nozzle and the second nozzle to spray the cleaning solvent and inject the inert gas towards the edge of the wafer. When the notch of the wafer rotates close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease, and controls the air pressure of the second nozzle to increase.

[0012] The beneficial effect of the method for edge cleaning of the wafer provided by the present invention is that the first nozzle sprays the cleaning solvent towards the edge of the wafer, and is combined with the second nozzle injecting the inert gas towards the edge of the wafer. When the notch of the wafer rotates close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease, preventing the cleaning solvent from splashing back to the back of the wafer through the notch. At this time, the cleaning solvent sprayed by the first nozzle mainly serves to moisten the photoresist at the notch of the wafer. The purpose of controlling the air pressure of the second nozzle to increase is to compensate for the possible problem of incomplete removal of the photoresist caused by the decrease in the flow rate of the first nozzle. Thus, through the cooperation of the first nozzle and the second nozzle, the situation of splashing back during the wafer edge cleaning process is avoided, and the reliability of the wafer edge cleaning is ensured, improving the yield of the wafer.

[0013] In some embodiments, when the notch of the wafer rotates close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease and the air pressure of the second nozzle to increase, including: Using an identifier to identify the position of the notch of the wafer; Based on the position of the notch of the wafer identified by the identifier and the rotation speed of the wafer, the controller calculates the time period during which the notch of the wafer approaches the first nozzle and the second nozzle; Based on the time period, the controller controls the flow rate of the first nozzle to decrease and the air pressure of the second nozzle to increase. The beneficial effect is that by using an identifier to identify the position of the notch of the wafer and combining with the rotation speed of the wafer, the time period during which the notch of the wafer approaches the first nozzle and the second nozzle during wafer rotation can be calculated, so that the first nozzle and the second nozzle can be accurately adjusted during this time period, thereby improving the effect of wafer edge cleaning.

[0014] In some embodiments, the controller controls and adjusts the flow rate range of the first nozzle when spraying the cleaning solvent to be 0 - 30 ml / min, and the controller controls and adjusts the air pressure range of the second nozzle when injecting the inert gas to be 10 - 50 kPa; When the controller controls the flow rate of the first nozzle to decrease and the air pressure of the second nozzle to increase, it further includes: The controller controls the flow rate of the first nozzle to decrease within a range of 3 - 15 ml / min, and the controller controls the air pressure of the second nozzle to increase within a range of 3 - 25 kPa.

[0015] In some embodiments, with the center of the carrier stage as the origin, it is set that the identifier is located in the 0° direction of the carrier stage; During the time period, the position of the notch of the wafer is between -30° and 30°. Description of the Drawings

[0016] Figure 1 It is a top view of the wafer edge cleaning device according to the embodiment provided by the present invention; Figure 2 It is a side view of the wafer edge cleaning device according to the embodiment provided by the present invention; Figure 3 It is a schematic diagram of setting the identifier in the 0° direction of the carrier stage with the center of the carrier stage as the origin according to the embodiment provided by the present invention; Figure 4 It is a flowchart of the wafer edge cleaning method according to the embodiment provided by the present invention.

[0017] Reference Signs: Carrier 1, robotic arm 2, first nozzle 21, second nozzle 22, identifier 3, base 4, cleaning part 5, cleaning tank 51, telescopic mechanism 6, electric control slide rail 7, slider 8, wafer 9, notch 91. Detailed implementation manner

[0018] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meaning understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items. The "connection" described herein can be a direct connection or an indirect connection, that is, a connection through an intermediate.

[0019] In addition, it should be understood that the orientation or positional relationship indicated by the "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. herein is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present invention. The "first" and "second" herein are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise stated, the meaning of "a plurality" is two or more.

[0020] In view of the problems existing in the prior art, the embodiments of the present invention provide a wafer edge cleaning device, refer to Figure 1 and Figure 2As shown in the figure, the wafer edge cleaning device includes a carrier 1, a robotic arm 2, and a controller. Among them, the carrier 1 is used to carry the wafer 9 and can drive the wafer 9 to rotate. The robotic arm 2 is arranged close to the carrier 1. The robotic arm 2 is provided with a first nozzle 21 and a second nozzle 22. The first nozzle 21 and the second nozzle 22 are arranged at intervals. The first nozzle 21 is used to spray a cleaning solvent onto the edge of the wafer 9, and the second nozzle 22 is used to eject an inert gas onto the edge of the wafer 9. The controller is electrically connected to the first nozzle 21, the second nozzle 22, and the robotic arm 2. The controller is used to control the flow rate of the first nozzle 21, control the air pressure in the second nozzle 22, and control the movement of the robotic arm 2.

[0021] In the working state of the wafer edge cleaning device, the controller controls the movement of the robotic arm 2 so that the first nozzle 21 and the second nozzle 22 spray a cleaning solvent and eject an inert gas onto the edge of the wafer 9. When the notch 91 of the wafer 9 rotates close to the first nozzle 21 and the second nozzle 22, the controller controls the flow rate of the first nozzle 21 to decrease to prevent the cleaning solvent from splashing back to the back of the wafer through the notch 91 of the wafer. At this time, the cleaning solvent sprayed by the first nozzle 21 mainly serves to moisten the photoresist at the notch of the wafer. Because the flow rate of the first nozzle decreases, there may be a situation where the photoresist cannot be completely removed only by the first nozzle 21. Therefore, it is also necessary to control the air pressure of the second nozzle 22 to increase, and the inert gas is ejected through the second nozzle 22 to remove the moistened photoresist. Therefore, the wafer edge cleaning device provided in this embodiment not only avoids the occurrence of splashing during the wafer edge cleaning process of the wafer 9, but also ensures the reliability of the wafer edge cleaning of the wafer 9 and improves the yield of the wafer 9.

[0022] In this embodiment, the first nozzle 21 and the second nozzle 22 are close to each other, and the first nozzle 21 is close to the front end of the robotic arm 2. The first nozzle 21 is connected to a liquid supply source through a liquid supply pipeline, and the liquid supply source provides a cleaning solvent that can remove photoresist. The second nozzle 22 is connected to a gas supply source through a gas supply pipeline, and the gas supply source provides an inert gas. Among them, the inert gas can be nitrogen.

[0023] Reference Figure 1 and Figure 2As shown, in some embodiments, the wafer edge cleaning device further includes an identifier 3 electrically connected to the controller. The identifier 3 is spaced apart from the carrier 1 and corresponds to the positions of the first nozzle 21 and the second nozzle 22 in the working state. The identifier 3 is used to identify the notch 91 of the wafer 9. The controller can calculate the time period during which the notch 91 of the wafer 9 approaches the first nozzle 21 and the second nozzle 22 based on the position of the notch 91 of the wafer 9 identified by the identifier 3 and the rotation speed of the wafer 9.

[0024] In this embodiment, the identifier 3 can be disposed below the carrier 1 and is located on both sides of the wafer 9 with the robotic arm 2 respectively. The identifier 3 can be an interferometer. When the detection signal emitted by the identifier 3 contacts the wafer 9, the distance between the identifier 3 and the wafer 9 can be detected. When the notch 91 of the wafer 9 rotates to directly above the identifier 3, the detection signal emitted by the identifier 3 will pass through the notch 91 of the wafer 9, and at this time the detected distance will become larger. Thus, according to this rule, the position of the notch 91 of the wafer 9 at a specific time point can be identified, and the time period during which the notch 91 of the wafer 9 approaches the first nozzle 21 and the second nozzle 22 can be calculated based on the rotation speed of the wafer 9, so that the first nozzle 21 and the second nozzle 22 can be controlled and adjusted according to the time period.

[0025] Reference Figure 1 and Figure 2 As shown, in some embodiments, the wafer edge cleaning device further includes a base 4 disposed close to the carrier 1. The robotic arm 2 is disposed on the base 4 and can move along the extension direction of the base 4 so that the robotic arm 2 approaches or moves away from the carrier 1.

[0026] In this embodiment, an electrically controlled slide rail 7 and a slider 8 are provided on the base 4. The electrically controlled slide rail 7 is installed and arranged along the extension direction of the base 4. One end of the robotic arm 2 is fixedly connected to the slider 8. The controller is used to control the slider 8 to move back and forth along the extension direction of the slide rail, thereby driving the robotic arm 2 to approach or move away from the carrier 1. By controlling the robotic arm 2 to move away from the carrier 1, it is avoided that the robotic arm 2 affects other process steps in the non-edge cleaning working state.

[0027] Further, the wafer edge cleaning device further includes a cleaning member 5 provided on the base 4. The cleaning member 5 has a cleaning tank 51 which can accommodate the first nozzle 21 and the second nozzle 22. There is cleaning liquid in the cleaning tank 51 for cleaning the first nozzle 21 and the second nozzle 22. A telescopic mechanism 6 is also provided on the base 4. The telescopic mechanism 6 is arranged on the slider 8 so that it can move along the extending direction of the base 4. One end of the robotic arm 2 is fixedly arranged at the telescopic end of the telescopic mechanism 6.

[0028] In the non-working state, the base 4 drives the telescopic mechanism 6 and the robotic arm 2 to move above the cleaning member 5. The telescopic mechanism 6 retracts so that the first nozzle 21 and the second nozzle 22 descend into the cleaning tank 51. In the working state, the telescopic mechanism 6 first drives the robotic arm 2 to rise so that the first nozzle 21 and the second nozzle 22 move upward from the cleaning tank 51. Then the slider 8 drives the telescopic mechanism 6 and the robotic arm 2 to move towards the edge of the wafer 9 until the first nozzle 21 and the second nozzle 22 face the edge of the wafer 9.

[0029] In some embodiments, the controller controls and adjusts the flow rate range of the first nozzle 21 when spraying the cleaning solvent to be 0 - 30 ml / min, and the controller controls and adjusts the air pressure range of the second nozzle 22 when ejecting the inert gas to be 10 - 50 kPa.

[0030] In this embodiment, in the working state, the controller controls the flow rate of the first nozzle 21 when spraying the cleaning solvent to be 10 ml / min, and controls the air pressure of the second nozzle 22 when ejecting the inert gas to be 15 kPa. When the notch 91 of the wafer 9 rotates to be close to the first nozzle 21 and the second nozzle 22, the controller controls and adjusts the flow rate of the first nozzle 21 to decrease to 5 ml / min, and controls the air pressure of the second nozzle 22 to increase to 30 kPa.

[0031] Specifically, as shown in Figure 3 Taking the center of the carrier 1 as the origin, it is set that the identifier 3 is located in the 0° direction of the carrier 1. In the working state, when the carrier 1 drives the wafer 9 to rotate so that the position where the notch 91 of the wafer 9 is located is between -30° and 30°, the controller controls the flow rate of the first nozzle 21 to decrease, and controls the air pressure of the second nozzle 22 to increase.

[0032] It can be understood that in this embodiment, the position where the notch 91 of the wafer 9 is close to the first nozzle 21 and the second nozzle 22 during the time period is within the range of -30° to 30°.

[0033] In another embodiment provided by the present invention, a method for wafer edge cleaning is provided. Referring to Figures 1 to 4 as shown, this method uses the wafer edge cleaning device described in the above embodiment to clean the edge of the wafer. The method includes: S401: Fix the wafer on the carrier table.

[0034] S402: The controller controls the movement of the robotic arm so that the first nozzle and the second nozzle face the edge of the wafer.

[0035] Specifically in this step, the controller controls the robotic arm 2 to move upward so that the first nozzle 21 and the second nozzle 22 are moved out of the cleaning tank 51. Then, the controller controls the robotic arm 2 to move towards the wafer 9 at a speed of 20 mm / s to a position of 2 mm, and then slowly move towards the wafer 9 at a speed of 2 mm / s until the first nozzle 21 and the second nozzle 22 face the edge of the wafer 9.

[0036] S403: In the working state, the carrier table drives the wafer to rotate. The controller controls the first nozzle and the second nozzle to spray a cleaning solvent and jet an inert gas towards the edge of the wafer. When the notch of the wafer rotates close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease and the air pressure of the second nozzle to increase.

[0037] Specifically in this step, an identifier 3 is used to identify the position of the notch 91 of the wafer 9. The controller calculates the time period when the notch 91 of the wafer 9 approaches the first nozzle 21 and the second nozzle 22 according to the position of the notch 91 of the wafer 9 identified by the identifier 3 and the rotation speed of the wafer 9. The controller controls the flow rate of the first nozzle 21 to decrease and the air pressure of the second nozzle 22 to increase according to the time period.

[0038] Wherein, the controller controls and adjusts the flow rate range of the first nozzle 21 when spraying the cleaning solvent to be 0 - 30 ml / min, and the controller controls and adjusts the air pressure range of the second nozzle 22 when jetting the inert gas to be 10 - 50 kPa.

[0039] In this embodiment, the controller controls the flow rate of the first nozzle 21 to decrease within a range of 3 - 15 ml / min, and controls the air pressure of the second nozzle 22 to increase within a range of 3 - 25 kPa. For example, in the working state of this embodiment, the controller controls the flow rate of the first nozzle 21 to be 10 ml / min when spraying the cleaning solvent, and controls the air pressure of the second nozzle 22 to be 15 kPa when injecting the inert gas. When the notch 91 of the wafer 9 rotates close to the first nozzle 21 and the second nozzle 22, the controller controls to adjust the flow rate of the first nozzle 21 to decrease to 5 ml / min, and controls the air pressure of the second nozzle 22 to increase to 30 kPa.

[0040] As described above, the above is only the specific implementation manner of the embodiments of the present application, but the protection scope of the embodiments of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of the present application should be covered within the protection scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application should be subject to the protection scope of the claims.

Claims

1. A wafer edge cleaning device, characterized in that: include: A carrier table, used to carry the wafer and drive the wafer to rotate; A robotic arm is arranged close to the carrier platform, and is provided with a first nozzle and a second nozzle, wherein the first nozzle is used to spray a cleaning solvent toward the edge of the wafer, and the second nozzle is used to spray an inert gas toward the edge of the wafer; a controller, electrically connected to the first nozzle, the second nozzle and the robotic arm; In the working state, the controller controls the movement of the robot arm so that the first nozzle and the second nozzle spray the cleaning solvent and the inert gas toward the edge of the wafer. When the notch of the wafer rotates to be close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease, and controls the gas pressure of the second nozzle to increase.

2. The wafer edge cleaning device according to claim 1, characterized in that: Also included is an identifier electrically connected to the controller; The identifier is spaced apart from the carrier and corresponds to the positions of the first nozzle and the second nozzle in the working state, and the identifier is used to identify the notch of the wafer; The controller may calculate a time period during which the notch of the wafer is close to the first nozzle and the second nozzle according to the notch position of the wafer identified by the identifier and the rotation speed of the wafer.

3. The wafer edge cleaning device according to claim 2, characterized in that: Also included is a base disposed near the carrying platform; The mechanical arm is arranged on the base and can move along the extension direction of the base so that the mechanical arm is close to the carrying platform or away from the carrying platform.

4. The wafer edge cleaning device according to claim 3, characterized in that: It also includes a cleaning member disposed on the base, wherein the cleaning member has a cleaning groove; The base is also provided with a telescopic mechanism, and the telescopic mechanism can move along the extension direction of the base; One end of the mechanical arm is arranged on the telescopic mechanism; In a non-working state, the base drives the telescopic mechanism and the mechanical arm to move to the cleaning part, and the telescopic mechanism retracts to allow the first nozzle and the second nozzle to be located in the cleaning tank.

5. The wafer edge cleaning device according to any one of claims 1 to 4, characterized in that: The controller controls and adjusts the flow rate of the first nozzle in the range of 0-30 ml / min when spraying the cleaning solvent, and the controller controls and adjusts the gas pressure of the second nozzle in the range of 10-50 kPa when spraying the inert gas.

6. The wafer edge cleaning device according to any one of claims 2 to 4, characterized in that: Taking the center of the carrying platform as the origin, setting the identifier to be located at the 0° direction of the carrying platform; In a working state, when the carrier table drives the wafer to rotate so that the position of the notch of the wafer is between -30° and 30°, the controller controls the flow rate of the first nozzle to decrease, and controls the air pressure of the second nozzle to increase.

7. A method for cleaning wafer edges, characterized in that: The wafer edge cleaning device according to any one of claims 1 to 6 is used to clean the edge of a wafer, and the method comprises: The wafer is fixedly placed on the carrier platform; The controller controls the movement of the robot arm so that the first nozzle and the second nozzle are directed toward the edge of the wafer; In the working state, the carrier platform drives the wafer to rotate, and the controller controls the first nozzle and the second nozzle to spray the cleaning solvent and the inert gas toward the edge of the wafer. When the notch of the wafer rotates to be close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease, and controls the gas pressure of the second nozzle to increase.

8. The method according to claim 7, characterized in that When the notch of the wafer rotates to be close to the first nozzle and the second nozzle, the controller controls the flow rate of the first nozzle to decrease, and controls the gas pressure of the second nozzle to increase, including: Using an identifier to identify the notch position of the wafer; The controller calculates a time period during which the notch of the wafer is close to the first nozzle and the second nozzle according to the notch position of the wafer identified by the identifier and the speed at which the wafer rotates; The controller controls the flow rate of the first nozzle to decrease according to the time period, and controls the air pressure of the second nozzle to increase.

9. The method according to claim 7 or 8, characterized in that: The controller controls and adjusts the flow rate of the first nozzle when spraying the cleaning solvent to a range of 0-30 ml / min, and the controller controls and adjusts the gas pressure of the second nozzle when spraying the inert gas to a range of 10-50 kPa; The controller controls the flow rate of the first nozzle to decrease, and controls the air pressure of the second nozzle to increase, and further includes: The controller controls the flow rate of the first nozzle to decrease in a range of 3-15 ml / min, and the controller controls the air pressure of the second nozzle to increase in a range of 3-25 kPa.

10. The method according to claim 8, characterized in that Taking the center of the carrying platform as the origin, setting the identifier to be located at the 0° direction of the carrying platform; During the time period, the notch position of the wafer is between -30° and 30°.

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