8X8 edge-emitting dual-polarization planar antenna array and communication equipment thereof

By adopting a shared dual-polar feeding network based on SICL in the antenna array, the complexity of the dual-polar feeding network and the implementation of the two-dimensional dual-polar edge-emitting array in the prior art is solved, and the 8X8 edge-emitting dual-polar plane antenna array is realized, with higher gain and wider application prospects.

CN120200034APending Publication Date: 2025-06-24BEIJING INST OF TECH
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Patent Information

Application Number
CN202510342740.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-21
Publication Date
2025-06-24

AI Technical Summary

Technical Problem

The existing dual-polarized feed network requires vertically stacked independent multi-layer metal or dielectric substrates, resulting in increased profile height, higher cost and complex design. At the same time, the existing technology only realizes one-dimensional single-polarized or double-polarized end-angle arrays, and fails to realize a two-dimensional dual-polarized edge-angle array.

Method used

A 1-point 16 dual-polar feed network based on SICL is adopted to realize a shared dual-polar feed network through SMP to SIW/SICL conversion structure, T-type power division structure and coupled feed cavity, supporting the transmission of TEM and TE10 modes, and 8X8 side radiation is achieved through the radiation gap and the sub-array back cavity.

Benefits of technology

The double-polarized edge emission at the 8X8 two-dimensional array scale is realized, with better high gain characteristics, reduced profile height and cost, and has broader application prospects in the millimeter wave band.

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Abstract

The invention discloses a 8 * 8 side-emission dual-polarization planar antenna array and communication equipment thereof, the 8 * 8 side-emission dual-polarization planar antenna array comprises a radiation structure and a feed structure, the radiation structure comprises a radiation slot and a sub-array back cavity, the feed structure comprises a 1-divided-16 dual-polarization feed network based on SICL, and the dual-polarization feed network is used for realizing dual-polarization side emission of a 8 * 8 two-dimensional array scale. According to the invention, the dual-polarization slot array antenna is realized by using the SICL, feeding of two polarizations of a TEM mode and a TE10 mode can be realized by using a set of shared dual-polarization feed network, meanwhile, high isolation can be kept between the two polarizations, edge radiation of a 8X8 two-dimensional array scale is realized, and the dual-polarization slot array antenna has a better high-gain characteristic and can be widely applied to the technical field of antennas.
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Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and in particular to an 8X8 broadside dual-polarized planar antenna array and its communication device. Background Art

[0002] Most of the existing dual-polarized feeding networks require vertically stacked independent multi-layer metal or dielectric substrates to separately implement horizontal polarization and vertical polarization feeding. This will introduce a multi-layer structure, resulting in double the profile height of the feeding network, and higher manufacturing costs and more complex designs. In addition, the existing SICL-based array antennas can only achieve one-dimensional single-polarized broadside arrays and one-dimensional single-polarized or dual-polarized end-fire arrays. Summary of the Invention

[0003] To solve the above technical problems, the object of the present invention is to provide an 8X8 broadside dual-polarized planar antenna array and its communication device, which can use a set of shared feeding network to achieve feeding of two polarizations and achieve broadside radiation of an 8×8 two-dimensional array scale.

[0004] To achieve the above object, one aspect of the embodiments of the present application provides an 8X8 broadside dual-polarized planar antenna array, including a radiation structure and a feeding structure. The radiation structure includes radiation slots and sub-array back cavities, and the feeding structure includes a 1-to-16 SICL-based dual-polarized feeding network, and the dual-polarized feeding network is used to achieve dual-polarized broadside of an 8X8 two-dimensional array scale.

[0005] In some embodiments, the radiation structure includes a first metal layer and a second metal layer from top to bottom. A plurality of the radiation slots are formed on the first metal layer, and a plurality of the sub-array back cavities are formed on the second metal layer.

[0006] In some embodiments, the feeding structure includes a first dielectric layer, a second dielectric layer, and a third dielectric layer from top to bottom. The upper surface of the second dielectric layer is provided with inner conductors, dipoles, and a plurality of metallized vias, and each of the metallized vias penetrates the first dielectric layer, the second dielectric layer, and the third dielectric layer.

[0007] In some embodiments, the feeding structure further includes a metal plate and a ground plane. The metal plate is attached to the upper surface of the first dielectric layer, the ground plane is attached to the lower surface of the third dielectric layer, a plurality of coupling feeding slots are formed on the metal plate, and the metal plate and the ground plane are electrically connected through each of the metallized vias.

[0008] In some embodiments, the dual-polarized feeding network includes an SMP-to-SIW conversion structure, an SMP-to-SICL conversion structure, a plurality of T-shaped power dividing structures, and a plurality of coupled feeding cavities. The SMP-to-SIW conversion structure, the SMP-to-SICL conversion structure, and each of the coupled feeding cavities are connected through the T-shaped power dividing structures.

[0009] In some embodiments, each of the coupled feeding cavities includes the dipole and the SIW cavity. The SIW cavity includes the metal plate, the ground plane, the coupled feeding slot, and the metallized via hole. The dipole is located in the exact middle of the SIW cavity. One end of the dipole is connected to the inner conductor, and the other end of the dipole is connected to the metallized via hole through a lateral stub.

[0010] In some embodiments, the number of the coupled feeding cavities is 16, and the coupled feeding cavities are distributed in a 4-row and 4-column manner. The dipoles in the coupled feeding cavities of the first row and the dipoles in the coupled feeding cavities of the second row are placed symmetrically about the x-axis, and the dipoles in the coupled feeding cavities of the third row and the dipoles in the coupled feeding cavities of the fourth row are placed symmetrically about the x-axis.

[0011] In some embodiments, each of the radiation slots is cross-shaped, and the projections of the four radiation slots in the direction perpendicular to the setting direction of the antenna array overlap with the four peripheral edges of a sub-array back cavity.

[0012] In some embodiments, each of the coupled feeding slots is cross-shaped, and the projection of the coupled feeding slot in the direction perpendicular to the setting direction of the antenna array is located in the exact middle of the SIW cavity.

[0013] To achieve the above object, on the other hand, an embodiment of the present application proposes a communication device, including the 8×8 broadside dual-polarized planar antenna array as described above.

[0014] The beneficial effects of the present invention are as follows: An 8×8 broadside dual-polarized planar antenna array and its communication device of the present invention include a radiation structure and a feeding structure. The radiation structure includes radiation slots and a sub-array back cavity, and the feeding structure includes a 1-to-16 SICL-based dual-polarized feeding network. The present invention uses SICL to implement a dual-polarized slot array antenna, and can use a set of shared dual-polarized feeding network to feed two polarizations of TEM mode and TE 10 mode, while maintaining a high isolation degree between the two polarizations, and achieving broadside radiation of an 8×8 two-dimensional array scale, having better high-gain characteristics, and having a broader application prospect in the millimeter-wave band. Description of the Drawings

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following introduces the drawings required to be used in the embodiments of the present invention. It should be understood that the drawings in the following introduction are only for conveniently and clearly presenting some embodiments of the technical solutions in the present invention. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0016] Figure 1 It is a stacked exploded view of an 8×8 edge - radiating dual - polarized planar antenna array provided by an embodiment of the present invention;

[0017] Figure 2 It is a side view of an 8×8 edge - radiating dual - polarized planar antenna array provided by an embodiment of the present invention;

[0018] Figure 3 It is a structural schematic diagram of an antenna sub - array unit provided by an embodiment of the present invention;

[0019] Figure 4 It is a structural schematic diagram of a dual - polarized feeding network provided by an embodiment of the present invention;

[0020] Figure 5 It is a structural schematic diagram of a SICL supporting dual - mode composite transmission provided by an embodiment of the present invention;

[0021] Figure 6 It is a schematic diagram of the electric field when the transmission line transmits the TEM mode and the TE 10 mode;

[0022] Figure 7 It is a schematic diagram of the vector current distribution on the inner conductor and the dipole when the port is excited in the quasi - TEM mode provided by an embodiment of the present invention;

[0023] Figure 8 It is a schematic diagram of the electric field in the SIW cavity when two modes are respectively excited provided by an embodiment of the present invention;

[0024] Figure 9 It is a schematic diagram of the electric field in the SIW cavity when two modes are respectively excited after passing through the radiation structure provided by an embodiment of the present invention;

[0025] Figure 10 It is a schematic diagram of the electric field of a dual - mode composite T - type power - dividing structure when the TEM and TE 10 modes are respectively excited provided by an embodiment of the present invention;

[0026] Figure 11 It is a structural schematic diagram of a 4×4 antenna sub - array provided by an embodiment of the present invention;

[0027] Figure 12Schematic diagram of the electric field in the SIW cavity when excited in the TEM mode provided by an embodiment of the present invention;

[0028] Figure 13 Schematic diagram of the vector current distribution on the inner conductor and the end dipole when excited in the TEM mode provided by an embodiment of the present invention;

[0029] Figure 14 Schematic diagram of the structure of the feeding part provided by an embodiment of the present invention;

[0030] Figure 15 For TEM and TE provided by an embodiment of the present invention 10 Schematic diagram of the electric field of the feeding network when excited in different modes respectively.

[0031] Reference numerals: 01, the first metal layer; 02, the second metal layer; 03, the first dielectric layer; 04, the second dielectric layer; 05, the third dielectric layer; 06, the metal plate; 07, the floor; 08, the SMP connector; 101, the radiation slot; 102, the sub-array back cavity; 103, the coupling feeding slot; 104, the feeding blind hole; 105, the metallized through hole; 106, the dipole. Detailed implementation manners

[0032] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the embodiments of the present application. They are only examples of devices and methods consistent with some aspects of the embodiments of the present application detailed in the appended claims.

[0033] It can be understood that the terms "first", "second", etc. used in the present application may be used herein to describe various concepts, but unless otherwise specified, these concepts are not limited by these terms. These terms are only used to distinguish one concept from another. For example, without departing from the scope of the embodiments of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the words "if", "when" as used herein may be interpreted as "when...", "while...", or "in response to determining".

[0034] The terms "at least one", "a plurality of", "each", "any one", etc. used in the present application, at least one includes one, two or more, a plurality includes two or more, each refers to each of the corresponding plurality, and any one refers to any one of the plurality.

[0035] Before elaborating on the embodiments of the present application in detail, some nouns and terms involved in the embodiments of the present application are first explained. The nouns and terms involved in the embodiments of the present application are applicable to the following explanations.

[0036] SICL: substrate-integrated coaxial line;

[0037] TEM: transverse electromagnetic mode;

[0038] TE: transverse electric mode;

[0039] SIW: substrate-integrated waveguide.

[0040] With the development of millimeter-wave wireless systems, high-gain antennas have received more extensive attention due to the compensation for long-distance communication transmission losses. However, traditional high-gain antennas such as parabolic, reflective, and transmissive arrays all have a relatively high profile and a relatively low aperture efficiency. Planar array antennas show great potential in application scenarios where space is limited and high-gain characteristics are required. At the same time, the use of dual-polarization technology can improve the spectral utilization rate of millimeter-wave wireless communication systems and also improve the target recognition accuracy of radar systems.

[0041] Planar arrays usually adopt series or parallel feeding networks. Microstrip lines, air-filled metal waveguides, and dielectric integrated waveguides are usually used to implement the feeding networks. Microstrip lines are easy to integrate, but due to their open structure, there are serious radiation losses in the millimeter-wave band. Air-filled metal waveguides have high precision and low losses, but they are large in size, have a high profile, and have a relatively high processing cost. Dielectric integrated waveguides are small in size, have no radiation losses, and are easy to integrate. However, traditional SIW-based dual-polarization feeding networks need to use vertically stacked independent dielectric substrates to separately implement horizontal polarization and vertical polarization feeding, which will introduce a multi-layer structure, resulting in a double height of the feeding network profile and a higher manufacturing cost and more complex design.

[0042] As a planar-body coaxial transmission line, SICL has the advantages of non-dispersive and non-cutoff-frequency transmission of TEM-mode electromagnetic fields, and has a wider available bandwidth compared to SIW. However, the existing technology has only realized end-fire and one-dimensional arrays, and there has been no work on realizing two-dimensional dual-polarization edge-fire arrays based on SICL.

[0043] To this end, an embodiment of the present invention proposes an 8×8 edge - radiating dual - polarized planar antenna array, which includes a radiation structure and a feeding structure. The radiation structure includes radiation slots and a sub - array back cavity, and the feeding structure includes a 1 - to - 16 SICL - based dual - polarized feeding network. The present invention uses SICL to implement a dual - polarized slot array antenna, and can use a set of shared dual - polarized feeding networks to feed two polarizations in the TEM mode and the TE 10 mode, while maintaining a high isolation degree between the two polarizations, and achieving edge - radiating of an 8×8 two - dimensional array scale, having better high - gain characteristics and a broader application prospect in the millimeter - wave band.

[0044] Referring to Figure 1 , Figure 1 FIG. is the stacked exploded view of an 8×8 edge - radiating dual - polarized planar antenna array provided by an embodiment of the present invention. An embodiment of the present invention proposes an 8×8 edge - radiating dual - polarized planar antenna array, which includes a radiation structure and a feeding structure. The radiation structure includes radiation slots 101 and a sub - array back cavity 102, and the feeding structure includes a 1 - to - 16 SICL - based dual - polarized feeding network, and the dual - polarized feeding network is used to achieve dual - polarized edge - radiation of an 8×8 two - dimensional array scale.

[0045] Specifically, an embodiment of the present invention proposes a novel 8×8 edge - radiating dual - polarized planar antenna array using a mode - composite SICL feeding network. The array mainly consists of two parts: an upper - layer radiation structure and a lower - layer feeding structure. The radiation structure includes radiation slots 101 and a sub - array back cavity 102, and the feeding structure includes a 1 - to - 16 SICL - based dual - polarized feeding network and a conversion structure from SMP connectors to SIW / SICL.

[0046] It should be noted that an embodiment of the present invention uses a set of shared feeding networks to feed two polarizations, while maintaining a high isolation degree between the two polarizations, and for the first time realizes a two - dimensional dual - polarized parallel feeding network based on the SICL mode - composite theory. The present invention uses the TE 10 and TEM modes of SICL to excite the dual - polarized characteristics of the resonant cavity, abandoning the traditional design paradigm of independent and separated dual - polarized feeding networks. It realizes the integration of the structure and function of two independent dual - polarized feeding networks in a shared structure, achieving a more compact volume and a lower profile.

[0047] Referring to Figure 1 and Figure 2 , Figure 2 FIG. is the side view of an 8×8 edge - radiating dual - polarized planar antenna array provided by an embodiment of the present invention. In some optional embodiments, the radiation structure includes a first metal layer 01 and a second metal layer 02 from top to bottom. A plurality of radiation slots 101 are formed on the first metal layer 01, and a plurality of sub - array back cavities 102 are formed on the second metal layer 02.

[0048] Refer to Figure 1 、 Figure 2 and Figure 3 , Figure 3 Figure 3 is a schematic structural diagram of an antenna sub - array unit provided by an embodiment of the present invention. In some optional embodiments, the feeding structure includes, from top to bottom, a first dielectric layer 03, a second dielectric layer 04, and a third dielectric layer 05. The upper surface of the second dielectric layer 04 is provided with an inner conductor, a dipole 106, and a plurality of metallized vias 105. Among them, each metallized via 105 penetrates through the first dielectric layer 03, the second dielectric layer 04, and the third dielectric layer 05.

[0049] Refer to Figure 1 、 Figure 2 and Figure 3 ,In some optional embodiments, the feeding structure further includes a metal plate 06 and a ground plane 07. The metal plate 06 is attached to the upper surface of the first dielectric layer 03, and the ground plane 07 is attached to the lower surface of the third dielectric layer 05. A plurality of coupled - feeding slots 103 are formed on the metal plate 06, and the metal plate 06 and the ground plane 07 are electrically connected through each metallized via 105.

[0050] Refer to Figure 4 , Figure 4 Figure 4 is a schematic structural diagram of a dual - polarization feeding network provided by an embodiment of the present invention. In some optional embodiments, the dual - polarization feeding network includes an SMP - to - SIW conversion structure, an SMP - to - SICL conversion structure, a plurality of T - type power - dividing structures, and a plurality of coupled - feeding cavities. The SMP - to - SIW conversion structure, the SMP - to - SICL conversion structure, and each coupled - feeding cavity are connected through the T - type power - dividing structure.

[0051] Refer to Figure 3 and Figure 4 ,In some optional embodiments, each coupled - feeding cavity includes a dipole 106 and an SIW cavity. The SIW cavity includes a metal plate 06, a ground plane 07, a coupled - feeding slot 103, and a metallized via 105. The dipole 106 is located in the exact middle of the SIW cavity. One end of the dipole 106 is connected to the inner conductor, and the other end of the dipole 106 is connected to the metallized via 105 through a transverse stub.

[0052] Refer to Figure 4 ,In some optional embodiments, the number of coupled - feeding cavities is 16. The coupled - feeding cavities are distributed in a 4 - row and 4 - column manner. The dipoles 106 in the coupled - feeding cavities of the first row are placed symmetrically about the x - axis with the dipoles 106 in the coupled - feeding cavities of the second row. The dipoles 106 in the coupled - feeding cavities of the third row are placed symmetrically about the x - axis with the dipoles 106 in the coupled - feeding cavities of the fourth row.

[0053] Refer toFigure 3 , in some alternative embodiments, each radiation slot 101 is in a cross shape, and the projections of the four radiation slots 101 in the direction perpendicular to the antenna array setting direction overlap with the four peripheral edges of a sub-array back cavity 102.

[0054] Referring to Figure 3 , in some alternative embodiments, each coupling feed slot 103 is in a cross shape, and the projection of the coupling feed slot 103 in the direction perpendicular to the antenna array setting direction is located exactly in the middle of the SIW cavity.

[0055] The following describes the specific implementation principle of this application with reference to the accompanying drawings:

[0056] As Figure 1 shown in the exploded view of the stack, the top two layers are all-metal radiation structures achieved by machining (i.e., the first metal layer 01 and the second metal layer 02), and the lower layer is a full substrate integrated feed structure achieved by using a multi-layer printed circuit board (PCB) process. The dielectric substrate material used is TACONIC RF35-TC (ε r = 3.50 ± 0.05; tanδ = 0.0011). A total of three dielectric substrates with a thickness of 0.508 mm are used (i.e., the first dielectric layer 03, the second dielectric layer 04, and the third dielectric layer 05). A prepreg Rogers 4450F (ε r = 4.1, tanδ = 0.004) is used for bonding between every two dielectric substrates. The coaxial connector is SMP and is connected to the front-end feed source through a coaxial feeder. The entire lower-layer PCB consists of three dielectric layers and three metal copper layers. The metal plate is printed on the upper surface of the first dielectric layer 03, the topmost coupling feed slot is printed on the upper surface of the first dielectric layer 03, the inner conductor is printed on the upper surface of the second dielectric layer 04, and the ground plane 07 is printed on the lower surface of the third dielectric layer 05. By using the metallized vias 105, the metal plate 06, and the ground plane 07, a closed transmission line and SIW cavity structure are realized.

[0057] It should be noted that the reason for using three dielectric substrates in the embodiments of the present invention is that, as can be seen from the simulation optimization results, when the inner conductor and the dipole 106 are located in the upper-middle part of the cavity, better bandwidth characteristics can be obtained. In theory, the lower two dielectric substrates can be replaced by a single dielectric plate with a thickness of about 1.216 mm, but in the embodiments of the present invention, three dielectric substrates with the same thickness are used to reduce the cost of purchasing materials and save the design cost.

[0058] As Figure 2In the side view shown, the SMP connector 08 utilizes an impedance matching structure to achieve an interlayer connection with the inner conductor or the capacitive feeding disk through the feeding blind vias 104. Except for the two marked feeding blind vias 104, all the metal vias in the array are through vias that are grounded both above and below. The radiating metal layer and the lower feeding structure are combined together by a circle of screws around the array.

[0059] Furthermore, as Figure 5 shown is a schematic diagram of the SICL structure supporting dual-mode composite transmission. Compared with the SICL transmission line for single TEM-mode transmission, the dual-mode composite SICL has a larger aspect ratio. As Figure 6 shown is the schematic diagram of the electric field when the transmission line transmits the TEM mode and the TE 10 mode. When the transmission line transmits the coaxial TEM mode, as can be seen from Figure 6 (a) therein, the electric field of the TEM mode is mainly concentrated around the strip line acting as the central inner conductor, and the position and size of the periodically metallized vias 105 on both sides have no significant influence on the field mode; when the first-order higher-order mode TE 10 mode is transmitted in the transmission line, as can be seen from Figure 6 (b) therein, the presence of the central inner conductor will not cause significant interference to the TE 10 mode. At this time, the transmission line is equivalent to a substrate-integrated waveguide (SIW). Both the TEM mode and the TE 10 mode have very good transmission characteristics within the frequency band and also maintain a very high inter-mode isolation degree.

[0060] To more clearly demonstrate the mechanism of the proposed 8X8 edge-emitting dual-polarized planar antenna array, a single antenna sub-array unit is studied. As Figure 3 shown, the dual-mode composite characteristic of the SICL is utilized, and the two polarizations are excited by an ideal wave port with two modes. The dipole 106 is located in the middle of the SIW cavity. The inner conductor of the SICL extends and is connected to the left arm of the dipole 106, and the right arm of the dipole 106 is grounded through a transverse stub connected to the right metallized via 105.

[0061] When the port excites the quasi-TEM mode, the electromagnetic field is mainly concentrated near the inner conductor. By optimizing the length of the dipole arms and the position where the dipole 106 extends into the cavity, in-phase currents as shown in Figure 7 are generated on the dipole 106. This current excites the TE 120 mode electromagnetic field in the cavity, which in turn excites the longitudinal slit along the x direction in the cross slit on the cavity, generating horizontal polarization radiation. When the port excites the waveguide TE 10In this mode, the antenna operates like a traditional dielectric integrated waveguide feeding network, and the influence of the inner conductor can be ignored. Electromagnetic waves are transmitted to the cavity and excite the TE 210 mode of the cavity, and then couple and excite the single slit along the y-direction in the cross slit above the cavity, generating vertically polarized radiation. When the two modes are excited separately, the electric fields in the SIW cavity are as Figure 8 shown in (a) and (b) of. It can be seen from the electric field diagrams that the electric fields of TE 120 and TE 210 have excellent orthogonality, and there is no interference between the modes due to the two polarizations sharing a single feeding structure. This orthogonality can ensure that after the radiation structure is excited through the feeding cross slit, the two polarizations can further ensure a high isolation degree, as Figure 9 shown in (a) and (b) of.

[0062] As Figure 4 shown, it is a 1-to-16 mode composite dual-polarized feeding network. The components of the dual-polarized feeding network include: SMP to SIW / SICL conversion structure, 3-stage equal-amplitude and in-phase T-type power divider structure, T-type equal-amplitude and anti-phase T-type power divider structure, and a dual-polarized coupled feeding cavity composed of dipole 106 and SIW cavity.

[0063] As Figure 10 shows the schematic diagrams of the electric fields of the dual-mode composite T-type power divider when excited by TEM and TE 10 modes respectively. When port 1 excites the TEM mode, as can be seen from (a) of Figure 10 , the inner conductor has a strong guiding and constraining effect on the electromagnetic field of the TEM mode, and the surrounding metallized vias 105 will not affect the transmission of the electromagnetic field. The electromagnetic field is concentrated around the inner conductor and is equally distributed to ports 2 and 3 with equal power and equal phase along the Y-shaped inner conductor. Impedance matching is achieved by adjusting the line width of the Y-shaped inner conductor in the T-junction. When port 1 excites the TE 10 mode, as can be seen from (b) of Figure 10 , at this time, the working principle of the dual-mode composite T-type power divider is the same as that of the traditional SIW power divider principle, and power distribution is achieved by using 3 additional metallized vias 105 located in the middle. The stepped change of the waveguide width realizes the impedance matching of the TE 10 mode. It should be noted that the three additional metallized vias 105 located at the center for power distribution will not affect the transmission characteristics when operating in the TEM mode; and the inner conductor will not interfere with the electric field of the TE 10 mode. The two modes achieve power distribution in the same T-type structure, and there is a very high isolation degree between the modes. 10

[0064] As Figure 11The structural schematic diagram of a 4X4 antenna sub-array is shown. To implement a two-dimensional array, the two branches of the last-stage T-shaped power divider have a path difference of Δ. At the same time, two pairs of dipoles along the x-direction are symmetrically placed along the x-direction. For vertical polarization (TE 10 mode), the offset Δ provides a 180° phase difference between two adjacent SIW cavities along the x-axis. For horizontal polarization (TEM mode), the above offset Δ causes the currents at the ends of the inner conductors at both ends of the T-shaped power divider to be out of phase. Therefore, the adjacent dipoles 106 at both ends of the T-shaped power divider are symmetrically placed along the x-direction. As Figure 12 depicts the schematic diagram of the electric field in the SIW cavity when excited in the TEM mode, as Figure 13 depicts the schematic diagram of the vector current distribution on the inner conductor and the end dipole 106 when excited in the TEM mode. The currents on the two end dipoles 106 show perfect in-phase characteristics, which can excite the correct electric field in two adjacent mode conversion cavities along the x-axis, thereby in-phase exciting the coupled feed slot. In this way, the TEM mode and TE 10 mode can be transmitted in the same two-dimensional feed network, and at the same time, the two modes also maintain a high isolation degree, effectively reducing the profile of the dual-polarized antenna array.

[0065] As Figure 14 shown in (a), (b), (c), and (d) therein, the structural schematic diagram of the feeding part is shown. In the embodiment of the present invention, a bullet-shaped microstrip line is designed at the end of the SIW / SICL and connected to the probe of the feeding joint, realizing mode conversion and adjusting impedance matching. The width of the microstrip line, the radius of the metal disc, and the size of the probe introduce capacitive and inductive components, which have a significant impact on the transmission characteristics. Six additional metallized vias 105 are designed symmetrically at the intersection of the two branches, which can not only ensure the smooth passage of the TEM mode but also avoid the leakage of the TE 10 mode field to the feeding port of the TEM mode, ensuring a high isolation degree between the two feeding ports.

[0066] As Figure 15 shown in (a) and (b) therein, the schematic diagrams of the electric fields of the feeding network when excited in the TEM and TE 10 modes respectively are shown. When the two ports are excited separately, the same feeding network can transmit the two modes respectively and generate orthogonal electric fields in the feeding coupling cavity. When port 1 is excited, almost no electric field propagates to port 2, and vice versa, indicating that there is a good isolation degree between the two transmission modes.

[0067] The structure and working principle of the 8X8 broadside dual-polarized planar antenna array in the embodiment of the present invention are described above. It can be realized that the embodiment of the present invention has the following advantages:

[0068] 1. Compared with the traditional dual-polarized antenna array that uses two independent vertically stacked feeding networks for dual-polarized feeding, the embodiment of the present invention uses a shared feeding structure to implement the feeding networks for two polarizations, and thus realizes dual-polarized radiation. The embodiment of the present invention utilizes the TE 10 and TEM modes of SICL to excite the dual-polarized characteristics of the resonant cavity, and abandons the traditional design paradigm of independent and separated dual-polarized feeding networks. It realizes the integration of the structure and function of two independent dual-polarized feeding networks in a shared structure, achieving a more compact volume and a lower profile;

[0069] 2. Compared with the one-dimensional single-polarized end-fire / edge-fire antenna array realized by using the TEM mode of SICL, the embodiment of the present invention innovatively utilizes the dual-mode composite characteristics of SICL to feed the dual-polarized radiation elements, and finally realizes a two-dimensional dual-polarized edge-fire array;

[0070] 3. Compared with the work of realizing dual-polarized antennas based on the mode composite characteristics of SICL proposed in the prior art, the feeding network and the radiation structure in the embodiment of the present invention are effectively multiplexed on the aperture plane, which can integrate the power distribution network in a smaller space and improve the space utilization rate of the antenna. Compared with the end-fire array, the edge-fire array has the possibility of two-dimensional arraying, and can achieve higher gain, narrower beam width and better directivity. Therefore, on the basis of realizing dual-polarized edge-fire, the embodiment of the present invention also realizes a two-dimensional feeding network design and finally an 8X8 edge-fire dual-polarized planar antenna array;

[0071] 4. Although the two polarizations adopt a shared feeding structure, within a relatively wide frequency band, a port isolation of more than 30 dB is achieved. Both polarizations achieve good radiation, maintain consistent gain performance, and maintain a high polarization isolation.

[0072] The embodiment of the present application also provides a communication device. The device may include the foregoing 8X8 edge-fire dual-polarized planar antenna array.

[0073] The content in the foregoing embodiment of the 8X8 edge-fire dual-polarized planar antenna array is applicable to the embodiment of this communication device. The functions specifically implemented by the embodiment of this communication device are the same as those of the foregoing embodiment of the 8X8 edge-fire dual-polarized planar antenna array, and the beneficial effects achieved are also the same as those achieved by the foregoing embodiment of the 8X8 edge-fire dual-polarized planar antenna array.

[0074] In the foregoing description of this specification, the descriptions referring to the terms "one embodiment / example", "another embodiment / example" or "certain embodiments / examples", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0075] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the claims and their equivalents.

[0076] The above is a specific description of the preferred embodiments of the present invention, but the present invention is not limited to the embodiments. Those skilled in the art can also make various equivalent deformations or substitutions without departing from the spirit of the present invention, and these equivalent deformations or substitutions are all included in the scope defined by the claims of this application.

Claims

1. An 8×8 side-firing dual-polarized planar antenna array, characterized in that: It comprises a radiation structure and a feeding structure. The radiation structure comprises a radiation slot and a subarray back cavity. The feeding structure comprises a 1:16 SICL-based dual-polarization feeding network. The dual-polarization feeding network is used to realize dual-polarization side-radiation of an 8X8 two-dimensional array scale.

2. The 8×8 side-firing dual-polarized planar antenna array according to claim 1, characterized in that: The radiation structure comprises a first metal layer and a second metal layer from top to bottom, the first metal layer is provided with a plurality of the radiation slots, and the second metal layer is provided with a plurality of the sub-array back cavities.

3. The 8×8 broadside dual-polarized planar antenna array according to claim 1, characterized in that: The feeding structure includes a first dielectric layer, a second dielectric layer and a third dielectric layer from top to bottom, and an inner conductor, a dipole and a plurality of metallized through holes are arranged on the upper surface of the second dielectric layer, wherein each of the metallized through holes passes through the first dielectric layer, the second dielectric layer and the third dielectric layer.

4. The 8×8 side-firing dual-polarized planar antenna array according to claim 3, characterized in that: The feeding structure also includes a metal plate and a floor, wherein the metal plate is attached to the upper surface of the first dielectric layer, and the floor is attached to the lower surface of the third dielectric layer. A plurality of coupling feeding slots are provided on the metal plate, and the metal plate and the floor are electrically connected through the metallized through holes.

5. The 8×8 side-firing dual-polarized planar antenna array according to claim 4, characterized in that: The dual-polarization feeding network includes an SMP to SIW conversion structure, an SMP to SICL conversion structure, a plurality of T-type power division structures and a plurality of coupled feeding cavities, wherein the SMP to SIW conversion structure, the SMP to SICL conversion structure and each of the coupled feeding cavities are connected via the T-type power division structure.

6. The 8×8 side-firing dual-polarized planar antenna array according to claim 5, characterized in that: Each of the coupled feed cavities comprises the dipole and the SIW cavity, the SIW cavity comprises the metal plate, the floor, the coupled feed gap and the metallized through hole, the dipole is located in the middle of the SIW cavity, one end of the dipole is connected to the inner conductor, and the other end of the dipole is connected to the metallized through hole through a transverse branch.

7. The 8×8 side-firing dual-polarized planar antenna array according to claim 5, characterized in that: The number of the coupled feed cavities is 16, and the coupled feed cavities are distributed in 4 rows and 4 columns. The dipoles in the coupled feed cavities in the first row are symmetrically placed with the dipoles in the coupled feed cavities in the second row along the x-axis, and the dipoles in the coupled feed cavities in the third row are symmetrically placed with the dipoles in the coupled feed cavities in the fourth row along the x-axis.

8. The 8×8 broadside dual-polarized planar antenna array according to claim 1, characterized in that: Each of the radiation slots is in a cross shape, and the projections of the four radiation slots in a direction perpendicular to the antenna array arrangement direction overlap with the edges of the four sides of one of the sub-array back cavities.

9. The 8×8 side-firing dual-polarized planar antenna array according to claim 6, characterized in that: Each of the coupling feeding slots is cross-shaped, and the projection of the coupling feeding slot in a direction perpendicular to the antenna array setting direction is located in the middle of the SIW cavity.

10. A communication device, characterized in that: It comprises an 8X8 side-firing dual-polarized planar antenna array as described in any one of claims 1 to 9.

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