Preparation method of perovskite film layer, perovskite film layer and solar cell

Abstract

The invention provides a preparation method of a perovskite film layer. The preparation method comprises the following steps: providing a substrate and a transmission layer arranged on the substrate; a perovskite reaction material layer is deposited on the side, away from the substrate, of the transmission layer, an intermediate product is obtained, a first passivation precursor layer is deposited before the perovskite reaction material layer is deposited, and / or a second passivation precursor layer is deposited after the perovskite reaction material layer is deposited; and placing the intermediate product in a solvent atmosphere for reaction. The invention also provides a perovskite film layer and a solar cell. According to the preparation method of the perovskite film layer provided by the invention, the passivation layer precursor and the perovskite reaction material layer are formed through deposition, and then the solvent atmosphere is utilized to provide a reaction environment, so that the passivation layer precursor reacts with the perovskite reaction material, and the defect that each film layer needs to be annealed in the preparation process is avoided; the preparation of the perovskite film layer is realized, and the process is simple.

Description

Preparation method of perovskite film layer, perovskite film layer and solar cell Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a method for preparing a perovskite film layer, a perovskite film layer, and a solar cell. Background Art

[0002] Perovskite solar cells use perovskite materials as the light-absorbing layer. Due to their significant performance advantages, such as high light absorption coefficient, carrier mobility, and a directly tunable optical band gap, perovskite solar cells have attracted widespread attention and are rapidly developing. However, existing perovskite film preparation methods require annealing of each film layer during the fabrication process, resulting in a complex process.

[0003] Therefore, how to propose a method for preparing a perovskite film layer with a simple process, a perovskite film layer and a solar cell is an urgent problem to be solved.

[0004] Summary of the Invention

[0005] In view of the above problems, the present application provides a method for preparing a perovskite film layer with a simple process, a perovskite film layer and a solar cell.

[0006] In a first aspect, the present application provides a method for preparing a perovskite film layer, comprising the following steps:

[0007] Providing a substrate, the substrate comprising a base and a transmission layer disposed on the base;

[0008] Depositing a perovskite reaction material layer on a side of the transport layer facing away from the substrate to obtain an intermediate product, wherein before depositing the perovskite reaction material layer, a first passivation precursor layer is deposited, and / or, after depositing the perovskite reaction material layer, a second passivation precursor layer is deposited; and

[0009] The intermediate product is placed in a solvent atmosphere for reaction.

[0010] In the technical solution of the embodiment of the present application, a structure of a first passivation precursor layer / perovskite reaction material layer, a structure of a first passivation precursor layer / perovskite reaction material layer / second passivation precursor layer, or a structure of a perovskite reaction material layer / second passivation precursor layer is formed by deposition, and a solvent atmosphere is used to provide a reaction environment so that the first passivation precursor layer and / or the second passivation precursor layer reacts with the perovskite reaction material, thereby avoiding the defect that each film layer needs to be annealed during the preparation process, realizing the preparation of the perovskite film layer, and providing a method for preparing the perovskite film layer with a simple process.

[0011] At the same time, since the preparation method of the perovskite film layer provided in the present application avoids the defect that each film layer needs to be annealed during the preparation process, the preparation of the perovskite film layer is realized, thereby reducing the preparation cycle and cost of the perovskite film layer, and enabling large-scale continuous production.

[0012] Moreover, the solvent atmosphere is used to provide a reaction environment, and the first passivation precursor layer, and / or the second passivation precursor layer, and the perovskite reaction material react. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film layer.

[0013] In some embodiments, the transport layer comprises an electron transport layer or a hole transport layer.

[0014] In the technical solution of the embodiment of the present application, the electron transport layer has the function of transporting electrons and blocking electron-hole recombination, and the hole transport layer has the function of transporting holes and blocking electrons. The electron transport layer or the hole transport layer can ensure that the device using the perovskite film layer has a higher efficiency. In the formal device, the transport layer is the electron transport layer; in the trans device, the transport layer is the hole transport layer.

[0015] In some embodiments, the material of the electron transport layer includes at least one of TiO2, SnO2, and ZnO, and the material of the hole transport layer includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine], PTAA), 3,4-ethylenedioxythiophene monomer: polystyrenesulfonate (Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate, PEDOT:PSS), triphenylamine, phosphate carbazole, and NiO x At least one of .

[0016] In the technical solution of the embodiment of the present application, TiO2, SnO2, ZnO, and PTAA, PEDOT:PSS, triphenylamine, phosphate carbazole, NiO x Both have good stability and are easy to prepare.

[0017] In some embodiments, the first passivation precursor layer, the perovskite reaction material layer and / or the second passivation precursor layer are deposited by vapor deposition.

[0018] In the technical solution of the embodiments of this application, vapor deposition is used to deposit the first passivation precursor layer, the perovskite reaction material layer, and the second passivation precursor layer. This method is less dependent on substrate morphology, material solubility, and solvent wettability. This method not only has good accuracy and repeatability, but also has significant advantages in applicability. Moreover, it can expand the range of substrate types and perovskite film materials for perovskite devices, providing more optimization directions for the perovskite device field.

[0019] In some embodiments, the solvent atmosphere includes a polar solvent.

[0020] In the technical solution of the embodiment of the present application, the solvent atmosphere includes a polar solvent. The polar solvent has good solubility and can dissolve a large number of inorganic and organic compounds. The polar solvent also has good thermal stability and chemical stability.

[0021] In some embodiments, the solvent atmosphere includes at least one of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAC), 1,4-butyrolactone (GBL), and 1,3-dimethyl-2-imidazolidinone (DMI) gas phases.

[0022] In the technical solutions of the embodiments of the present application, the use of a solvent atmosphere of DMF, DMSO, NMP, DMAC, GBL, and DMI as the reaction environment is easy to implement. Furthermore, DMF, DMSO, NMP, DMAC, GBL, and DMI all have relatively good solubility, capable of dissolving a wide range of inorganic and organic compounds. Furthermore, DMF, DMSO, NMP, DMAC, GBL, and DMI have good thermal and chemical stability.

[0023] In some embodiments, the solvent atmosphere is provided by a semi-closed container or a gas circulation environment.

[0024] In the technical solution of the embodiment of the present application, the method of providing the solvent atmosphere through a semi-closed container or a gas circulation environment is simple and easy to operate.

[0025] In some embodiments, a solvent is added into a semi-closed container, and the semi-closed container is heated to form a solvent atmosphere.

[0026] In the technical solution of the embodiment of the present application, by adding a solvent into a semi-closed container and heating the semi-closed container to form a solvent atmosphere, not only can a solvent atmosphere be provided for the precursor material to react, but also the uniformity of the atmosphere can be ensured while avoiding continuous increase in local concentration.

[0027] In some embodiments, the concentration of the solvent atmosphere is 2-20 mg / m 3 .

[0028] If the concentration of the solvent atmosphere is too low, for example, less than 2 mg / m 3 , there is not enough solvent atmosphere to provide reaction scene, which affects the reaction rate; if the concentration of solvent atmosphere is too high, for example, the concentration is higher than 20mg / m 3 , then the excess solvent will dissolve the perovskite precursor material, affecting the crystallization process, resulting in a rough morphology, which is not conducive to device performance. Therefore, in the technical solution of the embodiment of the present application, the concentration of the solvent atmosphere is controlled to be 2-20 mg / m 3 , which can improve device performance while ensuring the reaction rate.

[0029] In some embodiments, the material of the first passivation precursor layer and the material of the second passivation precursor layer are selected from at least one of organic halides and metal halides, and the material of the first passivation precursor layer and the material of the second passivation precursor layer are different.

[0030] In the technical solution of the embodiment of the present application, the interface between the organic halide and the metal halide and the perovskite reaction material layer can form a perovskite structure, thereby increasing the bonding of the interface, so that the perovskite device prepared by this method has good photoelectric properties.

[0031] In some embodiments, the organic halide comprises at least one of benzylamine, phenylethylamine, diphenylamine, spermine, naphthylamine, and halogenated derivatives thereof.

[0032] In the technical solution of the embodiment of the present application, the material type of the organic halide is further limited, and the bonding property of the interface between the organic halide and the perovskite reaction material layer is optimized, so that the perovskite device prepared by this method has good photoelectric performance.

[0033] In some embodiments, the metal halide includes a halide of a trivalent metal element in the same period as Pb and Sn.

[0034] In the technical solution of the embodiment of the present application, the material type of the metal halide is further limited, and the bonding property of the interface between the metal halide and the perovskite reaction material layer is optimized, so that the perovskite device prepared by this method has good photoelectric performance.

[0035] In some embodiments, the perovskite reaction material layer includes BX2 and AX, wherein B includes at least one of Sn and Pb, A includes at least one of Cs, FA, and MA, X includes at least one of Cl, Br, and I, the organic halide is close to the BX2 side, and the metal halide is close to the AX side.

[0036] In the technical solution of the embodiment of the present application, the material type of the perovskite reaction material layer is further limited, the positional relationship between the organic halide and metal halide and the perovskite reaction material layer is limited, and the interface bonding between the organic halide and metal halide and the perovskite reaction material layer is optimized, so that the perovskite device prepared by this method has good photoelectric performance.

[0037] In some embodiments, the first passivation precursor layer has a thickness of 5-20 nm.

[0038] If the thickness of the first passivation precursor layer is too small, for example, less than 5nm, it will not effectively passivate the defects of the perovskite reaction material layer and enhance the charge transport function during the solvent atmosphere reaction. If the thickness of the first passivation precursor layer is too large, for example, greater than 20nm, the conductivity of the device will be reduced after the first passivation layer is formed, affecting the device performance. Controlling the thickness of the first passivation precursor layer to 5-20nm can ensure conductivity while passivating the defects of the perovskite reaction material layer and enhancing the charge transport function, thereby improving the photoelectric performance of the perovskite device.

[0039] In some embodiments, the second passivation precursor layer has a thickness of 5-20 nm.

[0040] If the thickness of the second passivation precursor layer is too small, for example, less than 5nm, it will not effectively passivate the defects of the perovskite layer and enhance charge transport during the solvent atmosphere reaction. If the thickness of the second passivation precursor layer is too large, for example, greater than 20nm, the conductivity of the device will be reduced after the second passivation layer is formed, affecting device performance. Controlling the thickness of the second passivation precursor layer to 5-20nm can ensure conductivity while passivating the defects of the perovskite reaction material layer and enhancing charge transport, thereby improving the photoelectric performance of the perovskite device.

[0041] In some embodiments, the perovskite reaction material layer has a thickness of 400-800 nm.

[0042] If the thickness of the perovskite reaction material layer is less than 400nm, the thickness of the perovskite material layer formed by the perovskite reaction material layer is insufficient to fully absorb sunlight, resulting in a low current in the perovskite device. If the thickness of the perovskite reaction material layer is greater than 800nm, the thickness of the perovskite material layer formed by the perovskite reaction material layer is too large, resulting in premature recombination of carriers in the perovskite device and inability to effectively separate them. Therefore, the perovskite reaction material layer with a thickness of 400-800nm ​​has excellent photoelectric performance.

[0043] In some embodiments, the substrate includes at least one of a polyethylene terephthalate (PET) substrate, a textured silicon substrate, or a glass substrate.

[0044] In the technical solutions of the embodiments of the present application, there are many types of substrates, which can be applied to devices with different requirements, and the costs of PET substrates, velvet silicon substrates, and glass substrates are relatively low.

[0045] In some embodiments, a conductive layer is provided between the substrate and the transmission layer.

[0046] In the technical solution of the embodiment of the present application, a conductive layer is provided on the surface of the substrate so that the substrate has good conductivity and can be used as a conductive electrode of devices such as perovskite solar cells.

[0047] In a second aspect, the present application further provides a perovskite film layer, comprising:

[0048] a perovskite material layer; and

[0049] a first passivation layer and / or a second passivation layer,

[0050] The first passivation layer is arranged on the surface of the perovskite material layer close to the substrate, and the second passivation layer is arranged on the surface of the perovskite material layer away from the substrate. The grain size of the perovskite material layer is greater than or equal to 2 microns.

[0051] In the technical solution of the embodiments of the present application, a solvent atmosphere is used to provide a reaction environment, allowing the first passivation precursor layer and / or the second passivation precursor layer to react with the perovskite reaction material. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film. The perovskite material layer has large grain size, good crystallization properties, and few grain boundary defects, thereby improving the stability of the perovskite film.

[0052] In a third aspect, the present application further provides a perovskite film layer, including a perovskite film layer obtained by the method for preparing a perovskite film layer according to any of the previous embodiments, wherein the perovskite film layer includes:

[0053] a perovskite material layer; and

[0054] a first passivation layer and / or a second passivation layer,

[0055] The first passivation layer is disposed on a surface of the perovskite material layer close to the substrate, and the second passivation layer is disposed on a surface of the perovskite material layer away from the substrate.

[0056] In the technical solutions of the embodiments of the present application, a solvent atmosphere is used to provide a reaction environment, allowing the first passivation precursor layer and / or the second passivation precursor layer to react with the perovskite reaction material. These simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film. The resulting perovskite material layer has large grain size, good crystallization properties, and few grain boundary defects, thereby improving the stability of the perovskite film.

[0057] In a fourth aspect, the present application further provides a solar cell comprising the perovskite film layer as described above or a perovskite film layer prepared by any of the methods for preparing the perovskite film layer as described above.

[0058] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the drawings without creative work.

[0060] FIG1 is a flow chart of a method for preparing a perovskite film layer according to some embodiments of the present application;

[0061] FIG2 is a schematic structural diagram of a solar cell according to some embodiments of the present application;

[0062] FIG3 is a schematic structural diagram of a solar cell according to some embodiments of the present application;

[0063] FIG4 is a schematic structural diagram of a solar cell according to some embodiments of the present application;

[0064] FIG5 is a schematic structural diagram of a solar cell according to some embodiments of the present application;

[0065] FIG6 is a schematic structural diagram of a solar cell according to some embodiments of the present application.

[0066] In the drawings, the drawings are not drawn to scale.

[0067] Description of markings: solar cell 10;

[0068] Substrate 101 , conductive layer 102 , electron transport layer 105 , perovskite film layer 104 , hole transport layer 103 , metal electrode 106 , first passivation layer 1041 , perovskite material layer 1042 and second passivation layer 1043 . DETAILED DESCRIPTION

[0069] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0070] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0071] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features.

[0072] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0073] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0074] Currently, market developments indicate that perovskite solar cells are becoming increasingly widely used. They can be used in lunar rovers, satellite panels, various sensors and detectors, as well as in civilian products such as wearable electronics and automotive power supplies. In many ways, perovskite solar cells are becoming a power source for consumer products. With the continued expansion of perovskite solar cell applications and their flexible and foldable nature, market demand is also growing.

[0075] In the existing method for preparing perovskite film layers, each film layer needs to be annealed during the preparation process, which makes the process complicated.

[0076] In order to solve the above technical problems, the present invention designs a method for preparing a perovskite film layer, which forms a structure of a first passivation precursor layer / perovskite reaction material layer, a structure of a first passivation precursor layer / perovskite reaction material layer / second passivation precursor layer, or a structure of a perovskite reaction material layer / second passivation precursor layer by deposition, and then uses a solvent atmosphere to provide a reaction environment so that the first passivation precursor layer and / or the second passivation precursor layer reacts with the perovskite reaction material, avoiding the defect that each film layer needs to be annealed during the preparation process, realizing the preparation of the perovskite film layer, and providing a method for preparing a perovskite film layer with a simple process.

[0077] At the same time, since the preparation method of the perovskite film layer provided in the present application avoids the defect that each film layer needs to be annealed during the preparation process, the preparation of the perovskite film layer is realized, thereby reducing the preparation cycle and cost of the perovskite light-absorbing layer and interface passivation, and can achieve large-scale continuous production.

[0078] Moreover, the solvent atmosphere is used to provide a reaction environment, and the first passivation precursor layer, and / or the second passivation precursor layer, and the perovskite reaction material react. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film layer.

[0079] Based on the above considerations, in order to simplify the process of preparing the perovskite film layer, a method for preparing the perovskite film layer is designed, comprising the following steps:

[0080] Providing a substrate, the substrate comprising a base and a transmission layer disposed on the base;

[0081] Depositing a perovskite reaction material layer on a side of the transport layer facing away from the substrate to obtain an intermediate product, wherein before depositing the perovskite reaction material layer, a first passivation precursor layer is deposited, and / or, after depositing the perovskite reaction material layer, a second passivation precursor layer is deposited; and

[0082] The intermediate product is placed in a solvent atmosphere for reaction.

[0083] When the intermediate product reacts in a solvent atmosphere, the first passivation precursor layer forms a first passivation layer, the perovskite reaction material layer forms a perovskite material layer, and the second passivation precursor layer forms a second passivation layer.

[0084] In the technical solution of the embodiment of the present application, a structure of a first passivation precursor layer / perovskite reaction material layer, a structure of a first passivation precursor layer / perovskite reaction material layer / second passivation precursor layer, or a structure of a perovskite reaction material layer / second passivation precursor layer is formed by deposition, and a solvent atmosphere is used to provide a reaction environment so that the first passivation precursor layer and / or the second passivation precursor layer reacts with the perovskite reaction material, thereby avoiding the defect that each film layer needs to be annealed during the preparation process, realizing the preparation of the perovskite film layer, and providing a method for preparing the perovskite film layer with a simple process.

[0085] At the same time, since the preparation method of the perovskite film layer provided in the present application avoids the defect that each film layer needs to be annealed during the preparation process, the preparation of the perovskite film layer is realized, thereby reducing the preparation cycle and cost of the perovskite light-absorbing layer, and enabling large-scale continuous production.

[0086] Moreover, the solvent atmosphere is used to provide a reaction environment, and the first passivation precursor layer, and / or the second passivation precursor layer, and the perovskite reaction material react. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film layer.

[0087] The present application is described in detail below with reference to the accompanying drawings and embodiments.

[0088] The technical solutions described in the embodiments of this application are applicable to perovskite light-absorbing layers, solar cells, and electrical devices. The solar cells disclosed in this application can be used for perovskite tandem solar cells and silicon-perovskite tandem solar cells, without limitation in this application.

[0089] Referring to FIG. 1 , according to some embodiments of the present application, a method for preparing a perovskite film layer is provided, comprising the following steps:

[0090] Providing a substrate, the substrate comprising a base and a transmission layer disposed on the base;

[0091] Depositing a perovskite reaction material layer on a side of the transport layer facing away from the substrate to obtain an intermediate product, wherein before depositing the perovskite reaction material layer, a first passivation precursor layer is deposited, and / or, after depositing the perovskite reaction material layer, a second passivation precursor layer is deposited; and

[0092] The intermediate product is placed in a solvent atmosphere for reaction.

[0093] In some embodiments, a first passivation precursor layer is deposited on the side of the transport layer facing away from the substrate, and then a perovskite reaction material layer is deposited on the side of the first passivation precursor layer facing away from the transport layer to obtain an intermediate product, which is then placed in a solvent atmosphere for reaction.

[0094] In some embodiments, a first passivation precursor layer is deposited on the side of the transport layer facing away from the substrate, a perovskite reaction material layer is deposited on the side of the first passivation precursor layer facing away from the transport layer, and then a second passivation precursor layer is deposited on the side of the perovskite reaction material layer facing away from the first passivation precursor layer to obtain an intermediate product, which is then placed in a solvent atmosphere for reaction.

[0095] In some embodiments, a perovskite reaction material layer is deposited on the side of the transport layer facing away from the substrate, and then a second passivation precursor layer is deposited on the side of the perovskite reaction material layer facing away from the transport layer to obtain an intermediate product, which is then placed in a solvent atmosphere for reaction.

[0096] A structure of a first passivation precursor layer / perovskite reaction material layer, a structure of a first passivation precursor layer / perovskite reaction material layer / second passivation precursor layer, or a structure of a perovskite reaction material layer / second passivation precursor layer is formed by deposition, and a solvent atmosphere is used to provide a reaction environment so that the first passivation precursor layer and / or the second passivation precursor layer reacts with the perovskite reaction material, thereby avoiding the defect that each film layer needs to be annealed during the preparation process, realizing the preparation of the perovskite film layer, and providing a method for preparing the perovskite film layer with a simple process.

[0097] At the same time, since the preparation method of the perovskite film layer provided in the present application avoids the defect that each film layer needs to be annealed during the preparation process, the preparation of the perovskite film layer is realized, thereby reducing the preparation cycle and cost of the perovskite light-absorbing layer, and enabling large-scale continuous production.

[0098] Moreover, the solvent atmosphere is used to provide a reaction environment, and the first passivation precursor layer, and / or the second passivation precursor layer, and the perovskite reaction material react. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film layer.

[0099] According to some embodiments of the present application, the transport layer includes an electron transport layer or a hole transport layer.

[0100] The electron transport layer has the function of transporting electrons and blocking electron-hole recombination, and the hole transport layer has the function of transporting holes and blocking electrons. The electron transport layer or the hole transport layer can ensure that the device using the perovskite film layer has a higher efficiency.

[0101] According to some embodiments of the present application, the material of the electron transport layer includes at least one of TiO2, SnO2, and ZnO, and the material of the hole transport layer includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine], PTAA), 3,4-ethylenedioxythiophene monomer: polystyrenesulfonic acid (Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate, PEDOT:PSS), triphenylamine, phosphate carbazole, and NiO x At least one of .

[0102] The triphenylamines may be N4,N4′-di(naphthalen-1-yl)-N4,N4′-bis(4-vinylphenyl)biphenyl-4,4′-diamine (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(4-vinyl-phenyl)benzidine, VNPB), PTAA, or N,N-diphenyl-4-(pyridin-4-yl)aniline (N,N-diphenyl-4-(pyridin-4-yl)aniline, (p-PY)), etc.

[0103] The phosphocarbazole may be (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (Phosphonic acid, (2-carbazol-9-ylethyl)-(8CI), 2PACz), 2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl)phosphonic acid (2-(3,6-Dimethyl-9H-carbazol-9-yl)ethyl)phosphonic acid, Me-2PACz), or (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (P-[2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]-Phosphonic acid, MeO-2PACz), etc.

[0104] TiO2, SnO2, and ZnO have good electron transport properties, PTAA, PEDOT:PSS, triphenylamine, phosphate carbazoles, and NiOx have good hole transport properties, and TiO2, SnO2, ZnO, as well as PTAA, PEDOT:PSS, triphenylamine, phosphate carbazoles, and NiOx all have good stability and are easy to prepare.

[0105] According to some embodiments of the present application, the first passivation precursor layer, the perovskite reaction material and / or the second passivation precursor layer are deposited by vapor deposition.

[0106] The vapor deposition method used to deposit the first passivation precursor layer, the perovskite reaction material layer, and the second passivation precursor layer has low dependence on substrate morphology, material solubility, and solvent wettability. This method is not only accurate and repeatable, but also has significant advantages in applicability. Moreover, it can expand the range of substrate types and perovskite film materials for perovskite devices, providing more optimization directions for the perovskite device field.

[0107] According to some embodiments of the present application, the solvent atmosphere includes a polar solvent.

[0108] The solvent atmosphere includes polar solvents. Polar solvents have good solubility and can dissolve a large number of inorganic and organic compounds. Polar solvents also have good thermal stability and chemical stability.

[0109] According to some embodiments of the present application, the solvent atmosphere includes at least one of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAC), 1,4-butyrolactone (GBL) and 1,3-dimethyl-2-imidazolidinone (DMI) gas phases.

[0110] Using a solvent atmosphere such as DMF, DMSO, NMP, DMAC, GBL, or DMI as the reaction environment is easy to implement. Furthermore, DMF, DMSO, NMP, DMAC, GBL, and DMI all have good solubility, capable of dissolving a wide range of inorganic and organic compounds. Furthermore, DMF, DMSO, NMP, DMAC, GBL, and DMI also have good thermal and chemical stability.

[0111] According to some embodiments of the present application, the solvent atmosphere is provided by a semi-closed container or a gas circulation environment.

[0112] As an example, the semi-closed container includes but is not limited to a beaker, and the gas circulation environment includes but is not limited to a tubular environment.

[0113] The method of providing the solvent atmosphere through a semi-closed container or a gas circulation environment is simple and easy to operate.

[0114] According to some embodiments of the present application, a solvent is added into a semi-closed container, and the semi-closed container is heated to form a solvent atmosphere.

[0115] By adding a solvent into a semi-closed container and heating the semi-closed container to form a solvent atmosphere, not only can a solvent atmosphere be provided for the precursor material to react, but also a uniform atmosphere can be ensured while preventing local concentrations from continuously increasing. As an example, the solvent can be added dropwise into the semi-closed container.

[0116] In some embodiments, the concentration of the solvent atmosphere may be 2-20 mg / m 3 .

[0117] As an example, the concentration of the solvent atmosphere can be 2 mg / m 3 , 3.5mg / m 3 , 5mg / m 3 , 7.5mg / m 3 , 11mg / m 3 , 14.5mg / m 3 , 17mg / m 3 , 19.5mg / m 3 , 20mg / m 3 etc., or 2-3.5 mg / m 3 3.5-5 mg / m 3 5-7.5 mg / m 3 7.5-11 mg / m 3 11-14.5 mg / m 3 14.5-17 mg / m 3 17-19.5 mg / m 3 19.5-20 mg / m 3 , 20mg / m 3 Etc., select according to actual needs, as long as it is 2-20mg / m 3 within the range of .

[0118] If the concentration of the solvent atmosphere is too low, for example, less than 2 mg / m 3 , there is not enough solvent atmosphere to provide reaction scene, which affects the reaction rate; if the concentration of solvent atmosphere is too high, for example, the concentration is higher than 20mg / m 3 , then the excess solvent will dissolve the perovskite precursor material, affecting the crystallization process, resulting in a rough morphology, which is not conducive to device performance. Therefore, in the technical solution of the embodiment of the present application, the concentration of the solvent atmosphere is controlled to be 2-20 mg / m 3 , which can improve device performance while ensuring the reaction rate.

[0119] In some embodiments, the solvent atmosphere includes a DMSO solvent atmosphere, and the concentration of the DMSO solvent atmosphere may be in the range of 2-10 mg / m 3In some embodiments, the solvent atmosphere includes an NMP solvent atmosphere, and the concentration of the NMP solvent atmosphere may be in the range of 5-15 mg / m 3 In some embodiments, the solvent atmosphere includes a DMF solvent atmosphere, and the concentration of the DMF solvent atmosphere may be in the range of 2-10 mg / m 3 .

[0120] The material of the first passivation precursor layer and the material of the second passivation precursor layer can be selected according to actual needs. According to some embodiments of the present application, the material of the first passivation precursor layer and the material of the second passivation precursor layer are selected from but not limited to at least one of organic halides and metal halides, and the material of the first passivation precursor layer and the material of the second passivation precursor layer are different.

[0121] The interface between the organic halide and metal halide and the perovskite reaction material layer can form a perovskite structure, thereby increasing the bonding of the interface, so that the perovskite device prepared by this method has good photoelectric properties.

[0122] According to some embodiments of the present application, the organic halide includes but is not limited to at least one of benzylamine, phenylethylamine, diphenylamine, spermine, naphthylamine and halogenated derivatives thereof.

[0123] The material types of organic halides are further limited, and the bonding properties of the interface between the organic halides and the perovskite reaction material layer are optimized, so that the perovskite device prepared by this method has good photoelectric properties.

[0124] According to some embodiments of the present application, the metal halide includes but is not limited to halides of trivalent metal elements in the same period as Pb and Sn.

[0125] The material types of metal halides are further limited, and the bonding properties of the interface between the metal halide and the perovskite reaction material layer are optimized, so that the perovskite device prepared by this method has good photoelectric properties.

[0126] According to some embodiments of the present application, the perovskite reaction material layer includes BX2 and AX, wherein B contains at least one of Sn and Pb, A contains at least one of Cs, FA and MA, X contains at least one of Cl, Br and I, the organic halide is close to the BX2 side, and the metal halide is close to the AX side.

[0127] The material type of the perovskite reaction material layer is further limited, and the positional relationship between the organic halide and metal halide and the perovskite reaction material layer is limited, which optimizes the interface bonding between the organic halide and metal halide and the perovskite reaction material layer, so that the perovskite device prepared by this method has good photoelectric performance.

[0128] According to some preferred embodiments of the present application, the thickness of the first passivation precursor layer is 5-20 nm.

[0129] As an example, the thickness of the first passivation precursor layer can be 5nm, 7.5nm, 10nm, 11nm, 14.5nm, 16nm, 18.5nm, 19.9nm, 20nm, etc., or it can be 5-7.5nm, 7.5-10nm, 10-11nm, 11-14.5nm, 14.5-16nm, 16-18.5nm, 18.5-19.9nm, 19.9-20nm, etc., and can be selected according to actual needs, as long as it is within the range of 5-20nm.

[0130] If the thickness of the first passivation precursor layer is too thin, for example, less than 5 nm, it will not effectively passivate the defects of the perovskite layer and enhance charge transport during the solvent atmosphere reaction. If the thickness of the first passivation precursor layer is too thick, for example, greater than 20 nm, the conductivity of the device will be reduced after the first passivation layer is formed, affecting device performance. Controlling the thickness of the first passivation precursor layer to 5-20 nm ensures conductivity while passivating the defects of the perovskite reaction material layer and enhancing charge transport, thereby improving the optoelectronic performance of the perovskite device.

[0131] Of course, the thickness of the first passivation precursor layer is not limited to 5-20 nm. In other embodiments, the thickness of the first passivation precursor layer can also be selected according to actual needs, for example, according to the material type of the first passivation precursor layer.

[0132] The thickness of the second passivation precursor layer may be the same as or different from the thickness of the first passivation precursor layer. According to some preferred embodiments of the present application, the thickness of the second passivation precursor layer is 5-20 nm.

[0133] As an example, the thickness of the second passivation precursor layer can be 5nm, 7.5nm, 10nm, 11nm, 14.5nm, 16nm, 18.5nm, 19.9nm, 20nm, etc., or it can be 5-7.5nm, 7.5-10nm, 10-11nm, 11-14.5nm, 14.5-16nm, 16-18.5nm, 18.5-19.9nm, 19.9-20nm, etc., and can be selected according to actual needs, as long as it is within the range of 5-20nm.

[0134] If the thickness of the second passivation precursor layer is too small, for example, less than 5nm, it will not effectively passivate the defects of the perovskite layer and enhance charge transport during the solvent atmosphere reaction. If the thickness of the second passivation precursor layer is too large, for example, greater than 20nm, the conductivity of the device will be reduced after the second passivation layer is formed, affecting device performance. Controlling the thickness of the second passivation precursor layer to 5-20nm can ensure conductivity while passivating the defects of the perovskite reaction material layer and enhancing charge transport, thereby improving the photoelectric performance of the perovskite device.

[0135] Of course, the thickness of the second passivation precursor layer is not limited to 5-20 nm. In other embodiments, the thickness of the second passivation precursor layer can also be selected according to actual needs, for example, according to the material type of the second passivation precursor layer.

[0136] In some embodiments, the perovskite reaction material layer has a thickness of 400-800 nm.

[0137] As an example, the thickness of the perovskite reaction material layer can be 400nm, 450nm, 460nm, 550nm, 650nm, 800nm, etc., or it can be 400nm-450nm, 450-460nm, 460-550nm, 550-650nm, 650-800nm, 800nm, etc., and can be selected according to actual needs, as long as it is within the range of 400-800nm.

[0138] If the thickness of the perovskite reaction material layer is less than 400nm, the thickness of the perovskite material layer formed by the perovskite reaction material layer is insufficient to fully absorb sunlight, resulting in a low current in the perovskite device. If the thickness of the perovskite reaction material layer is greater than 800nm, the thickness of the perovskite material layer formed by the perovskite reaction material layer is too large, resulting in premature recombination of carriers in the perovskite device and inability to effectively separate them. Therefore, the perovskite reaction material layer with a thickness of 400-800nm ​​has excellent photoelectric performance.

[0139] According to some embodiments of the present application, the substrate includes but is not limited to at least one of a polyethylene terephthalate (PET) substrate, a textured silicon substrate, or a glass substrate.

[0140] There are many types of substrates, which can be applied to devices with different requirements, and the costs of PET substrates, suede silicon substrates and glass substrates are relatively low.

[0141] According to some embodiments of the present application, a conductive layer is provided between the substrate and the transmission layer.

[0142] The material of the conductive layer is preferably, but not limited to, a material with high electrical conductivity and high visible light transmittance. As examples, the material of the conductive layer includes, but is not limited to, fluorine-doped tin oxide (F-doped tin oxide, FTO), indium tin oxides (Indium tin oxides, ITO), aluminum zinc oxide (Aluminum zinc oxide, AZO), boron zinc oxide (Boron zinc oxide, BZO), or indium zinc oxide (Indium zinc oxide, IZO).

[0143] The conductive layer is arranged on the surface of the substrate so that the substrate has good conductivity and can be used as a conductive electrode for devices such as perovskite solar cells.

[0144] According to some embodiments of the present application, a perovskite film layer is further provided, including:

[0145] a perovskite material layer; and

[0146] a first passivation layer and / or a second passivation layer,

[0147] The first passivation layer is arranged on the surface of the perovskite material layer close to the substrate, and the second passivation layer is arranged on the surface of the perovskite material layer away from the substrate. The grain size of the perovskite material layer is greater than or equal to 2 microns.

[0148] According to some embodiments of the present application, the perovskite material layer in the perovskite film layer may include zero-dimensional, one-dimensional and / or two-dimensional materials.

[0149] The solvent atmosphere is used to provide a reaction environment, and the first passivation precursor layer, and / or the second passivation precursor layer, react with the perovskite reaction material. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film layer.

[0150] The grain size of the perovskite material layer being greater than or equal to 2 micrometers means that the grain size in a direction perpendicular to the thickness of the perovskite material layer is greater than or equal to 2 micrometers.

[0151] The perovskite material layer has a large grain size, good crystallization properties, and few defects at the grain boundaries, thereby improving the stability of the perovskite film layer.

[0152] According to some embodiments of the present application, the present application further provides a perovskite film layer, including a perovskite film layer obtained by the preparation method of the perovskite film layer according to any of the previous embodiments, wherein the perovskite film layer includes:

[0153] a perovskite material layer; and

[0154] a first passivation layer and / or a second passivation layer,

[0155] The first passivation layer is disposed on a surface of the perovskite material layer close to the substrate, and the second passivation layer is disposed on a surface of the perovskite material layer away from the substrate.

[0156] In the technical solutions of the embodiments of the present application, a solvent atmosphere is used to provide a reaction environment, allowing the first passivation precursor layer and / or the second passivation precursor layer to react with the perovskite reaction material. These simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film. The resulting perovskite material layer has large grain size, good crystallization properties, and few grain boundary defects, thereby improving the stability of the perovskite film.

[0157] According to some embodiments of the present application, the present application also provides a solar cell, comprising a perovskite film layer according to any of the aforementioned embodiments or a perovskite film layer prepared by the method for preparing a perovskite film layer according to any of the aforementioned embodiments.

[0158] The perovskite film layer in any embodiment of the present application can be applied to a regular solar cell or an inverted solar cell, and can improve the efficiency and commercial value of the corresponding solar cell.

[0159] In some embodiments, referring to FIG2 , a solar cell 10 includes a substrate 101, a conductive layer 102, a hole transport layer 103, a perovskite film layer 104, an electron transport layer 105, and a metal electrode 106, which are sequentially stacked. The perovskite film layer 104 can be any of the aforementioned embodiments. In this embodiment, the solar cell 10 is an inverted solar cell.

[0160] In some embodiments, referring to FIG3 , solar cell 10 includes a substrate 101, a conductive layer 102, an electron transport layer 105, a perovskite film layer 104, a hole transport layer 103, and a metal electrode 106, which are sequentially stacked. Perovskite film layer 104 can be any of the aforementioned embodiments. In this embodiment, solar cell 10 is a formal solar cell.

[0161] According to some embodiments of the present application, the present application further provides an electrical device, comprising the solar cell provided by any of the above solutions.

[0162] In this application, the solar cell serves as a power source for the above-mentioned electrical device; alternatively, the solar cell can serve as an energy storage unit for the above-mentioned electrical device. As an example, the electrical device can be a lighting element, a display element, or a car.

[0163] The features and performance of the present application are further described in detail below with reference to the embodiments.

[0164] Example 1:

[0165] This embodiment provides a method for preparing a perovskite film layer, comprising the following steps:

[0166] Providing a substrate, the substrate comprising a stacked PET base, an ITO conductive layer, and a SnO2 electron transport layer;

[0167] On the side of the SnO2 electron transport layer facing away from the PET substrate, a 10 nm thick PEAI layer is deposited by vapor deposition as a first passivation precursor layer, and then a 300 nm thick SnI2 layer and a 150 nm thick MAI layer are deposited by vapor deposition on the surface of the PEAI layer facing away from the SnO2 electron transport layer, wherein the SnI2 layer and the MAI layer are perovskite reaction material layers, to obtain an intermediate product; and

[0168] Place the intermediate product in a beaker and add 5mg / ml 3 The DMSO solvent was heated to 100° C. to form a DMSO solvent atmosphere, and the reaction was carried out in the DMSO solvent atmosphere at 100° C. for 15 minutes.

[0169] The purity of the PEAI, SnI2, and MAI materials used in Example 1 is not less than 99%. The first passivation precursor layer forms a first passivation layer, and the perovskite reaction material layer forms a perovskite material layer. The perovskite film obtained in Example 1 includes the first passivation layer and the perovskite material layer. The first passivation layer is located at a first interface of the perovskite material layer near the SnO2 electron transport layer.

[0170] The semi-finished device including the perovskite film layer obtained in Example 1 was used to verify the performance of the perovskite film layer obtained by the preparation method of the perovskite film layer in Example 1. Referring to Figure 4, the solar cell 10 includes a substrate 101, a conductive layer 102, an electron transport layer 105, a perovskite film layer 104, a hole transport layer 103, and an electrode 106 stacked in sequence. The substrate 101, the conductive layer 102, the electron transport layer 105, and the perovskite film layer 104 are the semi-finished device including the perovskite film layer obtained in Example 1. The perovskite film layer 104 includes a first passivation layer 1041 and a perovskite material layer 1042. The first passivation layer 1041 is located at the interface of the perovskite material layer 1042 near the electron transport layer 105. The solar cell 10 in this embodiment is a formal solar cell.

[0171] Comparative Example 1:

[0172] This comparative example 1 provides a method for preparing a perovskite film layer, comprising the following steps:

[0173] Providing a substrate, the substrate comprising a stacked PET base, an ITO conductive layer, and a SnO2 electron transport layer;

[0174] Spin coating a 3 mg / mL PEAI isopropanol solution on the surface of the SnO2 electron transport layer facing away from the substrate at a rotation speed of 4000 rpm, and then depositing a 1.4 mol / L MASnI3 solution by spin coating to obtain an intermediate product; and

[0175] The intermediate product was annealed at 100°C for 30 minutes.

[0176] The purity of the PEAI and MASnI3 materials used in Comparative Example 1 is not less than 99%. Compared with the perovskite film layer obtained in Example 1, the perovskite film layer obtained in Comparative Example 1 does not include the first passivation layer.

[0177] Example 2:

[0178] This embodiment provides a method for preparing a perovskite film layer, comprising the following steps:

[0179] Providing a substrate, the substrate comprising a textured silicon base, an ITO conductive layer, and a PTAA hole transport layer stacked in layers;

[0180] On the side of the PTAA hole transport layer facing away from the textured silicon substrate, a 350 nm thick PbI2 layer and a 200 nm thick MAI layer are deposited by continuous vapor deposition, where the PbI2 layer and the MAI layer are perovskite reaction material layers; and then a 5 nm thick BiI3 layer is deposited by physical vapor deposition on the surface of the perovskite reaction material layer facing away from the substrate as a second passivation precursor layer to obtain an intermediate product; and

[0181] The intermediate product was placed at the bottom of a tube furnace, and a concentration of 10 mg / m 3 NMP solvent atmosphere, the temperature of the NMP solvent atmosphere is controlled at 90° C., and the reaction is carried out in the NMP solvent atmosphere for 30 minutes.

[0182] The purity of the PbI2, MAI, and BiI3 materials used in this embodiment is no less than 99%. The perovskite reaction material layer forms a perovskite material layer, and the second passivation precursor layer forms a second passivation layer. The perovskite film obtained in Example 2 includes the perovskite material layer and the second passivation layer. The second passivation layer is located at a second interface of the perovskite material layer facing away from the PTAA hole transport layer.

[0183] The semi-finished device including the perovskite film layer obtained in Example 2 was used to verify the performance of the perovskite film layer obtained by the preparation method of the perovskite film layer in Example 2. Referring to Figure 5, the solar cell 10 includes a substrate 101, a conductive layer 102, a hole transport layer 103, a perovskite film layer 104, an electron transport layer 105, and an electrode 106 stacked in sequence. The substrate 101, the conductive layer 102, the hole transport layer 103, and the perovskite film layer 104 are the semi-finished device including the perovskite film layer obtained in Example 2. The perovskite film layer 104 includes a perovskite material layer 1042 and a second passivation layer 1043, and the second passivation layer 1043 is located at the interface of the perovskite material layer 1042 near the electron transport layer 105. The solar cell 10 in this embodiment is an inverted solar cell.

[0184] Comparative Example 2:

[0185] This comparative example provides a method for preparing a perovskite film layer, comprising the following steps:

[0186] Providing a substrate, the substrate comprising a textured silicon base, an ITO conductive layer, and a PTAA hole transport layer stacked in layers;

[0187] The surface of the PTAA hole transport layer facing away from the textured silicon substrate was spin-coated with MAPbI3 with a concentration of 1.5 mol / L at a rotation speed of 5000 rpm and annealed at a temperature of 100°C for 10 minutes; then, an isopropanol solution of BiI3 with a concentration of 0.3 mg / mL was spin-coated at a rotation speed of 4000 rpm and annealed at a temperature of 100°C for 5 minutes.

[0188] The purity of the MAPbI3 and BiI3 materials used in Comparative Example 2 is not less than 99%. Compared with the perovskite film layer obtained in Example 2, the perovskite film layer obtained in Comparative Example 2 does not include the second passivation layer.

[0189] Example 3:

[0190] This embodiment provides a method for preparing a perovskite film layer, comprising the following steps:

[0191] Provide a substrate, the substrate includes a glass substrate, an ITO conductive layer and a NiO x hole transport layer;

[0192] In NiO xOn the side of the hole transport layer facing away from the glass substrate, a 10 nm thick PBAI layer is deposited as a first passivation precursor layer by vapor deposition; on the surface of the PBAI layer facing away from the substrate, a 300 nm thick PbI2 layer, a 10 nm thick CsI layer, and a 150 nm thick FAI layer are respectively deposited, where the PbI2 layer, the CsI layer, and the FAI layer are perovskite reaction material layers; then, a 10 nm thick InBr3 layer is deposited as a second passivation precursor layer on the surface of the perovskite reaction material layer facing away from the substrate by physical vapor deposition to obtain an intermediate product; and

[0193] Place the intermediate product in a beaker and add 8mg / ml 3 DMF solvent was heated to 100° C. to form a DMF solvent atmosphere, and the reaction was carried out in the DMF solvent atmosphere at 100° C. for 15 minutes.

[0194] The purity of the PBAI, PbI2, CsI, and FAI materials used in Example 3 is not less than 99%. The first passivation precursor layer forms a first passivation layer, the perovskite reaction material layer forms a perovskite material layer, and the second passivation precursor layer forms a second passivation layer. The perovskite film layer obtained in Example 3 includes a first passivation layer, a perovskite material layer, and a second passivation layer. The first passivation layer is located at a first interface of the perovskite material layer close to the glass substrate, and the second passivation layer is located at a second interface of the perovskite material layer away from the glass substrate, and the first interface and the second interface are arranged relative to each other.

[0195] The semi-finished device including the perovskite film layer obtained in Example 3 was used to verify the performance of the perovskite film layer obtained by the preparation method of the perovskite film layer in Example 3. Referring to Figure 6, the solar cell 10 includes a substrate 101, a conductive layer 102, a hole transport layer 103, a perovskite film layer 104, an electron transport layer 105, and an electrode 106 stacked in sequence. The substrate 101, the conductive layer 102, the hole transport layer 103, and the perovskite film layer 104 are the semi-finished device including the perovskite film layer obtained in Example 3. The perovskite film layer 104 includes a first passivation layer 1041, a perovskite material layer 1042, and a second passivation layer 1043. The first passivation layer 1041 is located at the interface of the perovskite material layer 1042 close to the hole transport layer 103, and the second passivation layer 1043 is located at the interface of the perovskite material layer 1042 away from the hole transport layer 103. The solar cell 10 in this embodiment is an inverted solar cell.

[0196] Comparative Example 3:

[0197] This comparative example provides a method for preparing a perovskite film layer, comprising the following steps:

[0198] Provide a substrate, the substrate includes a glass substrate, an ITO conductive layer and a NiO xhole transport layer;

[0199] In NiO x The hole transport layer was spin-coated on the surface away from the glass substrate with a 3 mg / mL PBAI isopropanol solution at a speed of 4000 rpm; the Cs solution was then spin-coated with a concentration of 1.4 mol / L. 0.05-0.2 FA 0.8-0.95 PbI3 was spin-coated at a speed of 5000 rpm and annealed at 100°C for 15 minutes; then, an isopropanol solution of InBr3 with a concentration of 0.2 mg / mL was spin-coated at a speed of 4000 rpm and annealed at 100°C for 5 minutes.

[0200] PBAI and Cs used in Comparative Example 3 0.05-0.2 FA 0.8-0.95 The purity of PbI3 and InBr3 materials is not less than 99%. Compared with the perovskite film layer obtained in Example 3, the perovskite film layer obtained in Comparative Example 3 does not include the first passivation layer and the second passivation layer.

[0201] It should be noted that the perovskite film layer in Comparative Examples 1-3 does not include the first passivation layer and / or the second passivation layer. If the first passivation layer and / or the second passivation layer are to be provided, both the first passivation layer and the second passivation layer require independent annealing treatment.

[0202] Photovoltaic conversion efficiency tests and light aging tests were performed on solar cells using the perovskite film layers of Examples 1-3 and Comparative Examples 1-3, respectively. The test methods are as follows:

[0203] Photoelectric conversion efficiency test:

[0204] At 25°C, the solar cells obtained by assembling the semi-finished devices including the perovskite film layer of Examples 1-3 and Comparative Examples 1-3 were placed under sunlight through a test fixture with a light power density of 100 mW / cm 2 Specifically: connect the test fixture and Keithley 2400 digital source meter using the four-wire method, set the starting voltage to -0.2V, the cut-off voltage to 1.2V, the scan speed to 200mV / s, perform reverse / forward scans, and record the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF).

[0205] Then, the photoelectric conversion efficiency (PCE) of the solar cell was calculated using the formula PCE=Jsc×Voc×FF / light power density×100%. The obtained data is shown in Table 1.

[0206] Light aging test:

[0207] Specific test process: optical power density is 100mW / cm2 At 65° C., solar cells obtained by assembling the semi-finished devices including the perovskite film layer of Examples 1-3 and Comparative Examples 1-3 were placed under sunlight and encapsulated in a nitrogen box. The maximum power point voltage of the solar cell was dynamically monitored, and the time, power, current, and voltage were recorded;

[0208] After the solar cell was taken out, the above-mentioned photoelectric conversion efficiency test was performed. Specifically, the test fixture and Keithley 2400 digital source meter were connected using the four-wire method. The starting voltage was set to -0.2V, the cut-off voltage was set to 1.2V, and the scan speed was set to 200mV / s. The forward and reverse scans were performed and the short-circuit current density (Jsc), open-circuit voltage (Voc) and fill factor (FF) were recorded.

[0209] Then, the photoelectric conversion efficiency (PCE) of the solar cell after light aging was calculated and compared with the PCE of the solar cell before aging.

[0210] Table 1: Perovskite film composition and solar cell performance parameters of Examples 1-3 and Comparative Examples 1-3

[0211] The results of Example 1 compared with Comparative Example 1, the results of Example 2 compared with Comparative Example 2, and the results of Example 3 compared with Comparative Example 3 in Table 1 show that the solar cell using the perovskite film layer provided by the present application has high photoelectric conversion efficiency and slow aging speed.

[0212] It can also be seen from the perovskite film preparation methods of the above embodiments 1-3 that the perovskite film preparation method of the present application only requires one heating annealing to complete, which saves time and cost compared to the multiple heating annealing in the prior art.

[0213] The present application forms a structure of a first passivation precursor layer / perovskite reaction material layer, a structure of a first passivation precursor layer / perovskite reaction material layer / second passivation precursor layer, or a structure of a perovskite reaction material layer / second passivation precursor layer by deposition, and then uses a solvent atmosphere to provide a reaction environment, so that the first passivation precursor layer and / or the second passivation precursor layer reacts with the perovskite reaction material, avoiding the defect that each film layer needs to be annealed during the preparation process, realizing the preparation of the perovskite film layer, and providing a method for preparing the perovskite film layer with a simple process.

[0214] At the same time, since the preparation method of the perovskite film layer provided in the present application avoids the defect that each film layer needs to be annealed during the preparation process, the preparation of the perovskite film layer is realized, thereby reducing the preparation cycle and cost of the perovskite light-absorbing layer, and enabling large-scale continuous production.

[0215] Moreover, the solvent atmosphere is used to provide a reaction environment, and the first passivation precursor layer, and / or the second passivation precursor layer, and the perovskite reaction material react. The simultaneous reactions can enhance the crystallization process, reduce grain boundary defects, and improve the stability of the perovskite film layer.

[0216] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and components may be substituted with equivalents without departing from the scope of the present application. In particular, the various technical features described in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions within the scope of the claims.

Claims

1. A method for preparing a perovskite film layer, comprising the following steps: Providing a substrate, the substrate comprising a base and a transmission layer disposed on the base; Depositing a perovskite reaction material layer on a side of the transport layer away from the substrate to obtain an intermediate product, wherein before depositing the perovskite reaction material layer, a first passivation precursor layer is deposited, and / or, after depositing the perovskite reaction material layer, a second passivation precursor layer is deposited; and The intermediate product is placed in a solvent atmosphere for reaction.

2. The method for preparing a perovskite film layer according to claim 1, characterized in that: The transport layer includes an electron transport layer or a hole transport layer.

3. The method for preparing a perovskite film layer according to claim 1 or 2, characterized in that: The material of the electron transport layer includes at least one of TiO2, SnO2, and ZnO, and the material of the hole transport layer includes poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine] (PTAA), 3,4-ethylenedioxythiophene monomer: polystyrenesulfonate (PEDOT:PSS), triphenylamine, phosphocarbazole, and NiO x At least one of .

4. The method for preparing a perovskite film layer according to any one of claims 1 to 3, characterized in that: The first passivation precursor layer, the perovskite reaction material and / or the second passivation precursor layer are deposited by vapor deposition.

5. The method for preparing a perovskite film layer according to any one of claims 1 to 4, characterized in that: The solvent atmosphere includes a polar solvent.

6. The method for preparing a perovskite film layer according to any one of claims 1 to 5, characterized in that: The solvent atmosphere includes at least one of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAC), 1,4-butyrolactone (GBL) and 1,3-dimethyl-2-imidazolidinone (DMI) gas phases.

7. The method for preparing a perovskite film layer according to any one of claims 1 to 6, characterized in that: The solvent atmosphere is provided by a semi-closed container or a gas circulation environment.

8. The method for preparing a perovskite film layer according to claim 7, characterized in that: A solvent is added into the semi-closed container, and the semi-closed container is heated to form a solvent atmosphere.

9. The method for preparing a perovskite film layer according to any one of claims 1 to 8, characterized in that: The concentration of the solvent atmosphere is 2-20 mg / m 3 .

10. The method for preparing a perovskite film layer according to any one of claims 1 to 9, characterized in that: The material of the first passivation precursor layer and the material of the second passivation precursor layer are selected from at least one of organic halides and metal halides, and the material of the first passivation precursor layer and the material of the second passivation precursor layer are different.

11. The method for preparing a perovskite film layer according to claim 10, characterized in that: The organic halide comprises at least one of benzylamine, phenethylamine, diphenylamine, spermine, naphthylamine and halogenated derivatives thereof.

12. The method for preparing a perovskite film layer according to claim 10 or 11, characterized in that: The metal halide includes a halide of a trivalent metal element in the same period as Pb and Sn.

13. The method for preparing a perovskite film layer according to any one of claims 10 to 12, characterized in that: The perovskite reaction material layer includes BX2 and AX, wherein B contains at least one of Sn and Pb, A contains at least one of Cs, FA and MA, X contains at least one of Cl, Br and I, the organic halide is close to one side of the BX2, and the metal halide is close to one side of the AX.

14. The method for preparing a perovskite film layer according to any one of claims 1 to 13, characterized in that: The thickness of the first passivation precursor layer is 5-20 nm.

15. The method for preparing a perovskite film layer according to any one of claims 1 to 14, characterized in that: The thickness of the second passivation precursor layer is 5-20 nm.

16. The method for preparing a perovskite film layer according to any one of claims 1 to 15, characterized in that: The thickness of the perovskite reaction material layer is 400-800nm.

17. The method for preparing a perovskite film layer according to any one of claims 1 to 16, characterized in that: The substrate includes at least one of a polyethylene terephthalate (PET) substrate, a suede silicon substrate or a glass substrate.

18. The method for preparing a perovskite film layer according to any one of claims 1 to 17, characterized in that: A conductive layer is provided between the substrate and the transmission layer.

19. A perovskite film layer, characterized in that: include a perovskite material layer; as well as a first passivation layer and / or a second passivation layer, The first passivation layer is disposed on a surface of the perovskite material layer close to the substrate, the second passivation layer is disposed on a surface of the perovskite material layer away from the substrate, and the grain size of the perovskite material layer is greater than or equal to 2 microns.

20. A perovskite film layer, characterized in that: A perovskite film layer obtained by the method for preparing a perovskite film layer according to any one of claims 1 to 18, wherein the perovskite film layer comprises: a perovskite material layer; and a first passivation layer and / or a second passivation layer, The first passivation layer is disposed on a surface of the perovskite material layer close to the substrate, and the second passivation layer is disposed on a surface of the perovskite material layer away from the substrate.

21. A solar cell, characterized in that: It comprises the perovskite film layer as described in claim 19 or 20 or the perovskite film layer prepared by the preparation method of the perovskite film layer according to any one of claims 1 to 18.

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