Three-dimensional sensor and preparation method thereof

Abstract

The embodiment of the invention provides a three-dimensional sensor and a preparation method thereof, and relates to the technical field of stretchable electronics. The three-dimensional sensor comprises a first layer structure, a dielectric layer and a second layer structure which are stacked in sequence. In the first layer structure, the first flexible areas and the first rigid areas are alternately arranged in the first direction, the first strain sensing layers are arranged on the sides, close to the second layer structure, of the first flexible areas, and the first electrode layers are arranged on the sides, close to the second layer structure, of the first rigid areas. In the second-layer structure, the second flexible areas and the second rigid areas are alternately arranged in the second direction, the second strain sensing layers are arranged on the sides, close to the first-layer structure, of the second flexible areas, and the second electrode layers are arranged on the sides, close to the first-layer structure, of the second rigid areas. The first strain sensing layer is used for detecting stress in a first direction, the second strain sensing layer is used for detecting stress in a second direction, and the first electrode layer and the second electrode layer are used for detecting capacitance change so as to realize pressure detection, so that three-dimensional detection is realized.

Description

Technical Field

[0001] This application relates to the field of stretchable electronics, and particularly to a three-dimensional sensor and a preparation method thereof. Background Art

[0002] Currently, most flexible sensors can only detect deformation in a certain direction or a single stimulus, and three-dimensional sensors that can detect complex signals have become a development trend. However, in current research, expensive raw materials and complex processing processes are required to achieve anisotropic response, with too high costs and being unfavorable for implementation. How to reduce the cost of three-dimensional sensors and achieve anisotropic response is the key problem to be solved in this research. Summary of the Invention

[0003] This application provides a three-dimensional sensor and a preparation method thereof, aiming to prepare a three-dimensional sensor with high sensitivity at a relatively low cost, and enabling the three-dimensional sensor to have strong anisotropy for detecting in-plane stress and out-of-plane pressure to achieve three-dimensional detection.

[0004] In a first aspect, this application provides a three-dimensional sensor, which includes a first-layer structure, a dielectric layer, and a second-layer structure stacked in sequence. Among them, the first-layer structure includes a first substrate, the first substrate includes a plurality of first flexible regions and a plurality of first rigid regions, the first substrate includes a first surface close to the second-layer structure, and along a first direction parallel to the first surface, the first flexible regions and the first rigid regions are arranged alternately. The first-layer structure further includes at least one first strain sensing layer and at least one first electrode layer, the first strain sensing layer is disposed on the side of the first flexible region close to the second-layer structure, and the first electrode layer is disposed on the side of the first rigid region close to the second-layer structure.

[0005] The second-layer structure includes a second substrate, the second substrate includes a plurality of second flexible regions and a plurality of second rigid regions, along a second direction parallel to the first surface, the second flexible regions and the second rigid regions are arranged alternately, and the second direction intersects with the first direction. The second-layer structure further includes at least one second strain sensing layer and at least one second electrode layer, the second strain sensing layer is disposed on the side of the second flexible region close to the first-layer structure, the second electrode layer is disposed on the side of the second rigid region close to the first-layer structure, and the orthographic projection of the second electrode layer on the first surface at least partially overlaps with the orthographic projection of the first electrode layer on the first surface.

[0006] In the embodiments of the present application, the first strain sensing layer and the first rigid region in the first layer structure are alternately arranged along the first direction, and the second strain sensing layer and the second rigid region in the second layer structure are alternately arranged along the second direction. The rigid region has the function of strain isolation or strain enhancement. Under the action of stresses in different directions, only the strain sensing layer at a specific position will respond, so as to identify stresses in different directions. Based on the above arrangement structure, the first strain sensing layer in the first layer structure is used to detect the stress in the first direction, and the second strain sensing layer in the second layer structure is used to detect the stress in the second direction. According to the differences in the stresses detected by the first layer structure and the second layer structure, the in-plane stress can be detected. Moreover, the first electrode layer and the second electrode layer are oppositely arranged with an intervening dielectric layer. Under the action of a pressure perpendicular to the first surface, the thickness of the dielectric layer changes, and the capacitance change is detected by the first electrode layer and the second electrode layer to achieve pressure detection. Based on this, the three-dimensional sensor can achieve three-dimensional detection.

[0007] In the embodiments of the present application, the three-dimensional sensor has a simple structure, low cost, high sensitivity and high integration, and can achieve anisotropic response.

[0008] In some embodiments, along the first direction, the first strain sensing layer is disposed between two adjacent first rigid regions. And / or, along the second direction, the second strain sensing layer is disposed between two adjacent second rigid regions.

[0009] In some embodiments, along the first direction, the first strain sensing layer is disposed on the outermost side of a plurality of first rigid regions. The first strain sensing layer includes an inner boundary and an outer boundary that are opposite to each other in the first direction, and the first rigid region includes an inner boundary and an outer boundary that are opposite to each other in the first direction. The orthographic projection of the inner boundary of the first strain sensing layer on the first surface coincides with the outer boundary of the first rigid region. And / or, along the second direction, the second strain sensing layer is disposed on the outermost side of a plurality of second rigid regions. The second strain sensing layer includes an inner boundary and an outer boundary that are opposite to each other in the second direction, and the second rigid region includes an inner boundary and an outer boundary that are opposite to each other in the second direction. The orthographic projection of the inner boundary of the second strain sensing layer on the first surface coincides with the outer boundary of the second rigid region.

[0010] In some embodiments, in the second direction, the boundary of the first strain sensing layer does not exceed the boundary of the first rigid region. And / or, in the first direction, the boundary of the second strain sensing layer does not exceed the boundary of the second rigid region.

[0011] In some embodiments, the orthographic projection of the first electrode layer on the first surface is located within the region where the first rigid region is located. And / or, the orthographic projection of the second electrode layer on the first surface is within the range of the orthographic projection of the second rigid region on the first surface.

[0012] In some embodiments, the outer contour of the positive projection of the second electrode layer on the first surface coincides with the outer contour of the positive projection of the first electrode layer on the first surface.

[0013] In some embodiments, the first layer structure further includes a first connection line, and the first connection line serially connects the first strain sensing layer and the first electrode layer. The second layer structure further includes a second connection line, and the second connection line serially connects the second strain sensing layer and the second electrode layer.

[0014] In some embodiments, the plurality of first rigid regions include multiple rows and multiple columns arranged in an array, each row of first rigid regions is arranged along a first direction, and each column of first rigid regions is arranged along a second direction. The first layer structure includes a plurality of first strain sensing layers and a plurality of first electrode layers, and at least one first strain sensing layer is disposed on the first flexible region alternately arranged with each row of first rigid regions, and at least one first electrode layer is disposed on each row of first rigid regions. And / or, the plurality of second rigid regions include multiple rows and multiple columns arranged in an array, each row of second rigid regions is arranged along the first direction, and each column of second rigid regions is arranged along the second direction. The second layer structure includes a plurality of second strain sensing layers and a plurality of second electrode layers, and at least one second strain sensing layer is disposed on the second flexible region alternately arranged with each column of second rigid regions, and at least one first electrode layer is disposed on each column of second rigid regions.

[0015] In some embodiments, along the stacking direction of the first layer structure, the dielectric layer, and the second layer structure, the plurality of first rigid regions correspond to the plurality of second rigid regions one by one. One first electrode layer is disposed on each first rigid region, one second electrode layer is disposed on each second rigid region, and the positive projection of one second electrode layer on the first surface at least partially overlaps the positive projection of one first electrode layer on the first surface.

[0016] In some embodiments, the first layer structure further includes a plurality of first connection lines, and the first strain sensing layer and the first electrode layer corresponding to each row of first rigid regions are serially connected by one first connection line. The second layer structure further includes a plurality of second connection lines, and the second strain sensing layer and the second electrode layer corresponding to each column of second rigid regions are serially connected by one second connection line.

[0017] In a second aspect, the present application further provides a method for manufacturing a three-dimensional sensor, including the following steps S01 to S04:

[0018] Step S01: Form a first layer structure, the first layer structure includes a first substrate, at least one first strain sensing layer, and at least one first electrode layer, the first substrate includes a first surface, and a plurality of first flexible regions and a plurality of first rigid regions located on the first surface. Along a first direction parallel to the first surface, the first flexible regions and the first rigid regions are alternately arranged, the first strain sensing layer is located in the first flexible region, and the first electrode layer is located in the first rigid region.

[0019] Step S02: Form a second-layer structure, which includes a second substrate, at least one second strain sensing layer, and at least one second electrode layer. The second substrate includes a second surface, and a plurality of second flexible regions and a plurality of second rigid regions located on the second surface. Along a second direction parallel to the second surface, the second flexible regions and the second rigid regions are arranged alternately, the second direction intersects with the first direction, the second strain sensing layer is located in the second flexible regions, and the second electrode layer is located in the second rigid regions.

[0020] Step S03: Form a dielectric layer on the first-layer structure, and the dielectric layer covers the first surface, the first strain sensing layer, and the first electrode layer.

[0021] Step S04: Arrange the second-layer structure on a side of the dielectric layer away from the first-layer structure. The second strain sensing layer and the second electrode layer are located on a side of the second substrate close to the first-layer structure, and a positive projection of the second electrode layer on the first surface at least partially overlaps with a positive projection of the first electrode layer on the first surface.

[0022] This preparation method is relatively simple, can be prepared by using relatively mature processes, and has a low cost. The three-dimensional sensor prepared based on this preparation method has a simple structure and a low cost, has high sensitivity and high integration, and can achieve anisotropic response. For example, based on the strain enhancement and strain isolation effects of the rigid regions, the first strain sensing layer in the first-layer structure is used to detect the stress in the first direction, the second strain sensing layer in the second-layer structure is used to detect the stress in the second direction, and the change in capacitance between the first electrode layer and the second electrode layer is used to detect the pressure in the direction perpendicular to the first surface, thereby realizing three-dimensional detection.

[0023] In some embodiments, forming the first substrate includes: combining the first flexible regions and the first rigid regions to form the first substrate. Alternatively, performing a first curing treatment on a first region of the first base layer to form the first flexible regions, and performing a second curing treatment on a second region of the first base layer to form the first rigid regions.

[0024] And / or, forming the second substrate includes: combining the materials of the second flexible regions and the second rigid regions to form the second substrate. Alternatively, performing a first curing treatment on a first region of the second base layer to form the second flexible regions, and performing a second curing treatment on a second region of the second base layer to form the second rigid regions.

[0025] In some embodiments, the material of the first strain sensing layer includes at least one of conductive ink, silver nanowires, or gold nanoparticles. Forming the first strain sensing layer includes: forming the first strain sensing layer by at least one of spin coating, blade coating, printing, or screen printing.

[0026] And / or, the material of the second strain sensing layer includes at least one of conductive ink, silver nanowires or gold nanoparticles. Forming the second strain sensing layer includes: forming the second strain sensing layer by at least one of spin coating, blade coating, printing or screen printing.

[0027] In some embodiments, the material of the first electrode layer includes at least one of liquid metal or stretchable conductive polymer. Forming the first electrode layer includes: forming the first electrode layer by screen printing or printing.

[0028] And / or, the material of the second electrode layer includes at least one of liquid metal or stretchable conductive polymer. Forming the second electrode layer includes: forming the second electrode layer by screen printing or printing.

[0029] In some embodiments, forming the dielectric layer includes: spin coating a polydimethylsiloxane colloid and a crosslinking agent on the first layer structure and curing to form the dielectric layer.

[0030] In the embodiments provided in the present application, the three-dimensional sensor preparation method is simple, can be prepared by using relatively mature processes, and the three-dimensional sensor has a simple structure, low cost, high sensitivity and high integration, and can achieve anisotropic response. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the present application, the following will briefly introduce the drawings required to be used in some embodiments of the present application. Obviously, the drawings in the following description are only the drawings of some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and do not represent the actual sizes of the products and the actual processes of the methods involved in the embodiments of the present application.

[0032] Figure 1 A structural schematic diagram of a three-dimensional sensor provided by an embodiment of the present application;

[0033] Figure 2 For Figure 1 A structural schematic diagram of the first layer structure of the three-dimensional sensor shown;

[0034] Figure 3 For Figure 1 A structural schematic diagram of the second layer structure of the three-dimensional sensor shown;

[0035] Figure 4A A patterning schematic diagram of a rigid-flexible substrate provided by the present application;

[0036] Figure 4B A simulation schematic diagram of applying strain in the first direction;

[0037] Figure 4C Schematic diagram of simulation for applying strains in the first direction and the second direction simultaneously;

[0038] Figure 4D For Figure 1 Schematic diagram of detection simulation when the three-dimensional sensor shown is applying strain in the first direction X;

[0039] Figure 4E For Figure 1 Schematic diagram of detection simulation when the three-dimensional sensor shown is applying strains in the first direction X and the second direction Y simultaneously;

[0040] Figure 4F For Figure 1 Schematic diagram of detection simulation when the three-dimensional sensor shown is applying strain in the Z-axis direction;

[0041] Figure 5 Schematic diagram of the structure of another three-dimensional sensor provided by an embodiment of the present application;

[0042] Figure 6 For Figure 5 Schematic diagram of the structure of the first layer of the three-dimensional sensor shown;

[0043] Figure 7 For Figure 5 Schematic diagram of the structure of the second layer of the three-dimensional sensor shown;

[0044] Figure 8 Schematic diagram of the structure of yet another three-dimensional sensor provided by an embodiment of the present application;

[0045] Figure 9 For Figure 8 Schematic diagram of the structure of the first layer of the three-dimensional sensor shown;

[0046] Figure 10 For Figure 8 Schematic diagram of the structure of the second layer of the three-dimensional sensor shown;

[0047] Figure 11 Flowchart of a method for manufacturing a three-dimensional sensor provided by an embodiment of the present application. Detailed implementation manners

[0048] Next, the technical solutions in some embodiments of the present application will be described clearly and completely with reference to the accompanying drawings. Apparently, the described embodiments are only a part of the embodiments of the present application, rather than all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments provided by the present application belong to the scope of protection of the present application.

[0049] Unless the context requires otherwise, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, i.e., "including, but not limited to".

[0050] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present application, unless otherwise specified, the meaning of "a plurality" is two or more.

[0051] When describing some embodiments, the expression "connected" and its derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connected" may be a fixed connection, a detachable connection, or integrated; it may be directly connected or indirectly connected through an intermediate medium. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components have direct physical contact or electrical contact with each other.

[0052] In addition, the use of "based on" means open and inclusive because a process, step, calculation, or other action "based on" one or more of the stated conditions or values may in practice be based on additional conditions or values beyond those stated.

[0053] It should be understood that when a layer or element is referred to as being on another layer or substrate, it may be directly on the other layer or substrate, or there may be an intermediate layer between the layer or element and the other layer or substrate.

[0054] Exemplary embodiments are described herein with reference to cross-sectional views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of regions are exaggerated for clarity. Thus, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Accordingly, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but include shape deviations caused by, for example, manufacturing. For example, an etched region shown as rectangular will typically have curved features. Thus, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shape of the regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0055] In practical applications, most external stimuli are multi-directional. For example, there are stresses in different directions in the plane and pressure out of the plane. Therefore, high-performance flexible wearable sensors need to detect complex multi-dimensional signals. Currently, most flexible sensors can only detect deformation in a certain direction or a single stimulus. Therefore, three-dimensional sensors that can detect complex signals have become a trend in development.

[0056] In related research, the structure of the sensing layer can be designed, such as a three-dimensional porous structure, so as to respond to in-plane strain and out-of-plane pressure. However, due to the isotropic mechanical and electrical properties, it is difficult for such structures to distinguish the direction and type of the stimulus signal. Alternatively, functional materials with an arranged structure can be selected as sensor elements, such as arranged carbon nanotubes, silver nanowires, etc., so that the sensor has significantly different responses to stimuli in the vertical and parallel directions. However, this solution requires expensive raw materials and complex processing procedures.

[0057] Based on this, to solve the problems of high cost and inability to respond anisotropically of three-dimensional sensors, the present application provides a three-dimensional sensor, as Figures 1 - 3 shown, Figure 1 is a schematic structural diagram of a three-dimensional sensor provided by an embodiment of the present application, Figure 2 is Figure 1 a schematic structural diagram of the first-layer structure of the three-dimensional sensor shown, Figure 3 is Figure 1 a schematic structural diagram of the second-layer structure of the three-dimensional sensor shown.

[0058] As Figures 1 - 3 shown, the three-dimensional sensor 100 includes a first-layer structure 10, a dielectric layer 20, and a second-layer structure 30 stacked in sequence. Among them, the dielectric layer 20 may include an elastic medium material.

[0059] The first-layer structure 10 includes a first substrate 11. The first substrate 11 includes a plurality of first flexible regions 12 and a plurality of first rigid regions 13. The first substrate 11 includes a first surface P1 close to the second-layer structure 30. Along a first direction X parallel to the first surface P1, the first flexible regions 12 and the first rigid regions 13 are arranged alternately.

[0060] Exemplarily, the first substrate 11 is a rigid-flexible substrate. The rigid region refers to the part with a larger modulus, and the flexible region refers to the part with a smaller modulus. Combining Figure 2 it can be understood that the regions of the first substrate 11 other than the first rigid regions 13 are all flexible regions, and the first flexible regions 12 in the present application can be understood as the parts located on both sides of the first rigid regions 13 along the first direction X, as Figure 2 shown by the dashed boxes in.

[0061] The first-layer structure 10 further includes at least one first strain sensing layer 14 and at least one first electrode layer 15. The first strain sensing layer 14 is disposed on the side of the first flexible region 12 close to the second-layer structure 30, and the first electrode layer 15 is disposed on the side of the first rigid region 13 close to the second-layer structure 30.

[0062] Similarly, the second-layer structure 30 includes a second substrate 31, and the second substrate 31 includes a plurality of second flexible regions 32 and a plurality of second rigid regions 33. Along a second direction Y parallel to the first surface P1, the second flexible regions 32 and the second rigid regions 33 are arranged alternately, and the second direction Y intersects with the first direction X.

[0063] It can be understood that the second flexible regions 32 here can be understood as the parts located on both sides of the second rigid regions 33 along the second direction Y, as Figure 3 shown by the dashed boxes in the figure.

[0064] The second-layer structure 30 further includes at least one second strain sensing layer 34 and at least one second electrode layer 35. The second strain sensing layer 34 is disposed on the side of the second flexible region 32 close to the first-layer structure 10, and the second electrode layer 35 is disposed on the side of the second rigid region 33 close to the first-layer structure 10.

[0065] That is, in this application, the first strain sensing layer 14 and the first rigid region 13 are arranged along the first direction X, and the second strain sensing layer 34 and the second rigid region 33 are arranged along the second direction Y. The first electrode layer 15 and the second electrode layer 35 are oppositely arranged with the dielectric layer 20 in between, and the orthographic projection of the second electrode layer 35 on the first surface P1 at least partially overlaps with the orthographic projection of the first electrode layer 15 on the first surface P1.

[0066] The above-mentioned first strain sensing layer 14 can be regarded as an equivalent resistor. The first strain sensing layer 14 is disposed on the first flexible region 12. When the first flexible region 12 undergoes strain, under the action of the strain, the equivalent resistance value of the first strain sensing layer 14 changes. By detecting the change in the equivalent resistance value, the detection of the strain (or stress) can be achieved. The same applies to the second strain sensing layer 34.

[0067] In the first-layer structure 10 and the second-layer structure 30, the rigid regions have the function of strain isolation or strain enhancement, as Figures 4A - 4C shown, Figure 4A is a schematic diagram of the patterning of a rigid-flexible substrate provided by this application, Figure 4B is a simulation diagram of applying a strain in the first direction, Figure 4C is a simulation diagram of applying strains in the first direction and the second direction simultaneously.

[0068] Figure 4A The regions other than the rigid region A in the figure are all flexible regions. In the case of applying a 60% strain along the first direction X, as Figure 4BAs shown, the rigid region A does not deform, and the flexible region 1 located between two rigid regions A along the first direction X has a higher strain. Correspondingly, it can be understood that the strain sensing layer provided on the flexible region 1 can detect a larger strain. While the strain of the flexible region 2 located between two rigid regions A along the second direction Y is very small, and the strain sensing layer provided on the flexible region 2 hardly undergoes strain.

[0069] When a biaxial strain is applied simultaneously along the first direction X and the second direction Y, that is, when a strain of 60% is applied along the first direction X and a strain of 60% is applied along the second direction Y, as Figure 4C shown, the flexible region 1 located between two rigid regions A along the first direction X has a higher strain, and the flexible region 2 located between two rigid regions A along the second direction Y also has a higher strain.

[0070] That is, along the direction of the arrangement of the rigid regions, when a force in the same direction as the arrangement direction of the rigid regions is applied, a strain enhancement effect can be generated on the flexible regions arranged alternately with the rigid regions, while a strain isolation effect can be generated on the flexible regions at other positions.

[0071] Based on this, the rigid-flexible substrate can achieve anisotropic response to strain. Under the action of stresses in different directions, only the strain sensing layer at a specific position will respond, so as to identify stresses in different directions.

[0072] In the embodiment of the present application, the first strain sensing layer 14 and the first rigid region 13 are arranged alternately along the first direction X, and the second strain sensing layer 34 and the second rigid region 33 are arranged alternately along the second direction Y. Based on the above working principle, when a strain along the first direction X is applied, in the first layer structure 10, due to the strain enhancement effect of the first rigid region 13, the first flexible region 12 deforms, and further the first strain sensing layer 14 located on the first flexible region 12 deforms, and the equivalent resistance value of the first strain sensing layer 14 changes. While in the second layer structure 30, due to the strain isolation effect of the second rigid region 33, the second flexible region 32 hardly deforms, and further, the second strain sensing layer 34 located on the second flexible region 32 hardly changes. Similarly, when a strain along the second direction Y is applied, the first strain sensing layer 14 hardly changes, and the second strain sensing layer 34 deforms, and its equivalent resistance value changes. According to the differences in the stresses detected by the first layer structure 10 and the second layer structure 30, the in-plane stress can be detected.

[0073] Moreover, the first electrode layer 15 is disposed on the first rigid region 13, and the second electrode layer 35 is disposed on the second rigid region 33. The first electrode layer 15 and the second electrode layer 35 are at least partially opposed to each other in the Z-axis direction. When a pressure in the Z-axis direction is applied, due to the strain isolation effect of the first rigid region 13, the first electrode layer 15 is not affected, and similarly, the second electrode layer 35 is not affected either. However, the thickness of the dielectric layer 20 changes with the pressure. The change in the thickness of the dielectric layer 20 will further cause a change in the capacitance between the first electrode layer 15 and the second electrode layer 35. By detecting the change in the capacitance value, the detection of the pressure in the Z-axis direction can be achieved. That is to say, the first electrode layer 15 and the second electrode layer 35 are disposed opposite to each other with the dielectric layer 20 in between. This structure can be regarded as a pressure sensor, and the pressure detection is realized by detecting the change in the capacitance value.

[0074] In summary, in the embodiment of the present application, the three-dimensional sensor 100 has a simple structure and low cost, has high sensitivity and high integration, can achieve anisotropic response, and can achieve three-dimensional detection. Moreover, the inventor of the present application has found through experiments that by increasing the modulus ratio between the rigid region and the flexible region, the sensitivity and anisotropic response of the three-dimensional sensor can be effectively improved.

[0075] Exemplarily, as Figures 4D - 4F shown, Figure 4D is Figure 1 a detection simulation schematic diagram of the three-dimensional sensor shown in the figure when a strain is applied in the first direction X. Figure 4E is Figure 1 a detection simulation schematic diagram of the three-dimensional sensor shown in the figure when strains are applied in the first direction X and the second direction Y simultaneously. Figure 4F is Figure 1 a detection simulation schematic diagram of the three-dimensional sensor shown in the figure when a strain is applied in the Z-axis direction. Wherein, the first direction X and the second direction Y are perpendicular, the abscissa represents time, as time goes by, the strain applied to the three-dimensional sensor increases uniformly and is withdrawn uniformly, and the ordinate represents the change rate of the equivalent resistance value of the first strain sensing layer 14 and / or the second strain sensing layer 34 and / or the change rate of the capacitance between the first electrode layer 15 and the second electrode layer 35.

[0076] As Figure 4D shown, when a strain in the first direction X is applied, an obvious strain occurs in the first direction X, the equivalent resistance of the first strain sensing layer 14 changes significantly, while the equivalent resistance of the second strain sensing layer 34 and the capacitance of the Z-axis direction pressure sensor do not change significantly.

[0077] As Figure 4EAs shown, when the direction of the applied strain forms an angle of 45° with the first direction X, obvious strains occur both along the first direction X and along the second direction Y. Therefore, the equivalent resistances of both the first strain sensing layer 14 and the second strain sensing layer 34 change significantly, and their resistance change values are the same. It can be understood that strains at other angles can also be decomposed along the first direction X and the second direction Y, and thus detected by the two strain sensing layers.

[0078] As Figure 4F shown, when a pressure perpendicular to the plane is applied, due to the strain isolation effect of the rigid regions, the equivalent resistances of the strain sensing layers arranged along the first direction X and the second direction Y do not change significantly, while the capacitance of the pressure sensor in the Z-axis direction changes significantly.

[0079] In some embodiments, as Figures 1 - 3 shown, along the first direction X, the first strain sensing layer 14 is disposed between two adjacent first rigid regions 13. And / or, along the second direction Y, the second strain sensing layer 34 is disposed between two adjacent second rigid regions 33.

[0080] Taking Figure 2 the first layer structure 10 shown as an example, combined with Figure 4B the simulation results shown, since the first rigid region 13 has a strain enhancement effect on the adjacent first flexible regions 12, the strain response is more obvious between two adjacent first rigid regions 13.

[0081] For example, combined with Figure 2 , taking the first rigid region 13 at the center of the first substrate 11 as a square, its side length is 10 mm. The adjacent first rigid region 13 is 5 mm wide along the first direction X and 10 mm long along the second direction Y. Along the first direction X, the distance between the central first rigid region 13 and its adjacent first rigid region 13 is 7.5 mm, and the distance between the outer edge of its adjacent first rigid region 13 and the edge of the first substrate 11 is 7.5 mm. Along the second direction Y, the distance between the outer edge of the first rigid region 13 and the edge of the first substrate 11 is 20 mm. The first strain sensing layer 14 is 2.5 mm wide along the first direction X and 5 mm long along the second direction Y, and the first strain sensing layer 14 is located between the central first rigid region 13 and its adjacent first rigid region 13. The first electrode layer 15 has the same side length as the central first rigid region 13, and their positions overlap.

[0082] The second layer structure 30 is similar thereto, equivalent to the first layer structure 10 rotated by 90°.

[0083] Based on this, the component forces after the orthogonal decomposition of the stress parallel to the first surface P1 can be detected by the first strain sensing layer 14 and the second strain sensing layer 34 respectively, and the pressure in the Z-axis direction can be detected by the pressure sensor, so that anisotropic response can be achieved and three-dimensional detection can be realized.

[0084] In some embodiments, as Figures 5 - 7 shown, Figure 5 FIG. is a schematic structural diagram of another three-dimensional sensor provided by an embodiment of the present application, Figure 6 is Figure 5 a schematic structural diagram of the first layer structure of the three-dimensional sensor shown, Figure 7 is Figure 5 a schematic structural diagram of the second layer structure of the three-dimensional sensor shown.

[0085] As Figure 6 shown, along the first direction X, the first strain sensing layer 14 is disposed on the outermost side of a plurality of first rigid regions 13. The first strain sensing layer 14 includes an inner boundary and an outer boundary opposite to each other in the first direction X. The first rigid region 13 includes an inner boundary and an outer boundary opposite to each other in the first direction X. The positive projection of the inner boundary of the first strain sensing layer 14 on the first surface P1 coincides with the outer boundary of the first rigid region 13.

[0086] And / or, as Figure 7 shown, along the second direction Y, the second strain sensing layer 34 is disposed on the outermost side of a plurality of second rigid regions 33. The second strain sensing layer 34 includes an inner boundary and an outer boundary opposite to each other in the second direction Y. The second rigid region 33 includes an inner boundary and an outer boundary opposite to each other in the second direction Y. The positive projection of the inner boundary of the second strain sensing layer 34 on the first surface P1 coincides with the outer boundary of the second rigid region 33.

[0087] The inner boundary here can be understood as the boundary closer to the center of the first substrate 11 or the center of the second substrate 12, and the outer boundary can be understood as the boundary closer to the edge of the first substrate 11 or the edge of the second substrate 12.

[0088] Taking Figure 6 the first layer structure 10 shown as an example, the first strain sensing layer 14 is located on the outermost side of a plurality of first rigid regions 13, that is, along the first direction X, the first strain sensing layer 14 is located on the left side (or, on the right side) of the leftmost first rigid region 13, and the inner boundary of the first strain sensing layer 14 coincides with the outer boundary of the first rigid region 13.

[0089] Combined with Figure 4B the simulation results shown, in the outermost side of a plurality of first rigid regions 13, the strain occurring in the region adjacent to the first rigid region 13 is higher and the strain response is more obvious.

[0090] For example, in combination with Figure 6 , a plurality of first rigid regions 13 are all square, with a side length of 10 mm. The distance between adjacent first rigid regions 13 is 5 mm. Along the first direction X, the distance between the outer edge of the outermost first rigid region 13 and the edge of the first substrate 11 is 5 mm. The first strain sensing layer 14 is located on the outermost side of the plurality of first rigid regions 13 and is adjacent to the outermost first rigid region 13. The first strain sensing layer 14 is 2.5 mm wide along the first direction X and 10 mm long along the second direction Y. Along the first direction X, the distance between the outer boundary of the first strain sensing layer 14 and the edge of the first substrate 11 is 2.5 mm. The first electrode layer 15 has the same side length as the first rigid region 13 located at the central position, and their positions overlap.

[0091] The second layer structure 30 is similar thereto, equivalent to the first layer structure 10 rotated by 90°.

[0092] Based on this, the component forces after orthogonal decomposition of the stress parallel to the first surface P1 can be detected by the first strain sensing layer 14 and the second strain sensing layer 34 respectively, and the pressure in the vertical direction can be detected by the pressure sensor, so that anisotropic response can be realized and three-dimensional detection can be achieved.

[0093] In some embodiments, as Figure 2 or Figure 6 shown, in the second direction Y, the boundary of the first strain sensing layer 14 does not exceed the boundary of the first rigid region 13. That is, the mapping range of the first rigid region 13 in the second direction Y covers the mapping range of the first strain sensing layer 14 in the second direction Y.

[0094] And / or, as Figure 3 or Figure 7 shown, in the first direction X, the boundary of the second strain sensing layer 34 does not exceed the boundary of the second rigid region 33. That is, the mapping range of the second rigid region 33 in the first direction X covers the mapping range of the second strain sensing layer 34 in the first direction X.

[0095] In combination with Figure 4B the simulation results, taking the first strain sensing layer 14 as an example, when a strain in the first direction X is applied, when the flexible region falls within the mapping range of the first rigid region 13 in the second direction Y, such as the flexible region 1, a larger strain can be detected. Outside the mapping range, such as the flexible region 2, the strain is smaller.

[0096] Based on this, the above-mentioned setting solution of the embodiment of the present application can ensure that the first strain sensing layer 14 has a high sensitivity to the strain in the first direction X, and the second strain sensing layer 34 has a high sensitivity to the strain in the second direction Y, so that the three-dimensional sensor has a high sensitivity, making full use of the strain enhancement and strain isolation effects of the rigid regions and avoiding interference.

[0097] In some embodiments, as Figure 2 or Figure 6 shown, the orthographic projection of the first electrode layer 15 on the first surface P1 is located within the region where the first rigid region 13 is located. And / or, as Figure 3 or Figure 7 shown, the orthographic projection of the second electrode layer 35 on the first surface P1 is within the range of the orthographic projection of the second rigid region 33 on the first surface P1.

[0098] Due to the strain isolation effect of the rigid region, when the electrode layer is disposed on the rigid region, under the application of pressure, the resistance value of the electrode layer itself does not change, and the electrode layer does not deform. The pressure only changes the thickness of the dielectric layer 20 in the pressure sensor. Based on this, the above-mentioned setting solution of the embodiment of the present application can make full use of the rigid region to realize the integration of the pressure sensor, ensure that the three-dimensional sensor has a high sensitivity, and avoid interference.

[0099] In some embodiments, as Figure 1 or Figure 5 shown, the outer contour of the orthographic projection of the second electrode layer 35 on the first surface P1 coincides with the outer contour of the orthographic projection of the first electrode layer 15 on the first surface P1.

[0100] The first electrode layer 15 and the second electrode layer 35 can be regarded as two electrode plates of a capacitor respectively. In the embodiment of the present application, the first electrode layer 15 and the second electrode layer 35 are completely oppositely disposed, which can make full use of the area of the rigid region and the electrode layer, maximize the facing area of the electrode plates, and is beneficial to improving the sensitivity of the pressure sensor.

[0101] In some embodiments, as Figure 2 shown, the first layer structure 10 further includes a first connection line L1, and the first connection line L1 connects the first strain sensing layer 14 and the first electrode layer 15 in series. As Figure 3 shown, the second layer structure 30 further includes a second connection line L2, and the second connection line L2 connects the second strain sensing layer 34 and the second electrode layer 35 in series.

[0102] For example, in combination with Figure 2 and the related dimension design described above, the first connection line L1 is 50 mm long in the first direction X and 1 mm wide in the second direction Y.

[0103] The first connection line L1 is connected in series with the first strain sensing layer 14, which can measure the equivalent resistance of the first strain sensing layer 14, thereby detecting the strain in the first direction X. Similarly, the second connection line L2 is connected in series with the second strain sensing layer 34, which can measure the equivalent resistance of the second strain sensing layer 34, thereby detecting the strain in the second direction Y.

[0104] Moreover, by using any one end of the first connection line L1 and any one end of the second connection line L2, the signals of the first electrode layer 15 and the second electrode layer 35 can be led out, thereby detecting the equivalent capacitance of the pressure sensor, and further detecting the pressure in the Z-axis direction.

[0105] The first connection line L1 is connected in series with the first strain sensing layer 14 and the first electrode layer 15, and the second connection line L2 is connected in series with the second strain sensing layer 34 and the second electrode layer 35, which can simplify the routing design, make full use of the first connection line L1 and the second connection line L2, and is beneficial to simplifying the structure and reducing costs.

[0106] In some embodiments, as Figures 8 - 10 shown, Figure 8 is a schematic structural diagram of another three-dimensional sensor provided by an embodiment of the present application, Figure 9 is Figure 8 a schematic structural diagram of the first layer structure of the three-dimensional sensor shown, Figure 10 is Figure 8 a schematic structural diagram of the second layer structure of the three-dimensional sensor shown.

[0107] As Figure 9 shown, a plurality of first rigid regions 13 include multiple rows and multiple columns arranged in an array, each row of first rigid regions 13 is arranged along the first direction X, and each column of first rigid regions 13 is arranged along the second direction Y. The first layer structure 10 includes a plurality of first strain sensing layers 14 and a plurality of first electrode layers 15. At least one first strain sensing layer 14 is provided on the first flexible region 12 alternately arranged with each row of first rigid regions 13, and at least one first electrode layer 15 is provided on each row of first rigid regions 13.

[0108] And / or, as Figure 10 shown, a plurality of second rigid regions 33 include multiple rows and multiple columns arranged in an array, each row of second rigid regions 33 is arranged along the first direction X, and each column of second rigid regions 33 is arranged along the second direction Y. The second layer structure 30 includes a plurality of second strain sensing layers 34 and a plurality of second electrode layers 35. At least one second strain sensing layer 34 is provided on the second flexible region 32 alternately arranged with each column of second rigid regions 33, and at least one first electrode layer 15 is provided on each column of second rigid regions 33.

[0109] In the embodiments of the present application, the rigid regions are arranged in an array. In the first layer structure 10, each row of the first rigid regions 13 corresponds to at least one first strain sensing layer 14 and at least one first electrode layer 15, so that stress detection and pressure detection in the first direction X can be realized for each row. In the second layer structure 30, each column of the second rigid regions 33 corresponds to at least one second strain sensing layer 34 and at least one first electrode layer 15. Thus, stress detection and pressure detection in the second direction Y can be realized for each column. The embodiments of the present application improve the integration of the three-dimensional sensor and can further improve the sensitivity.

[0110] In some embodiments, as Figure 8 shown, along the stacking direction of the first layer structure 10, the dielectric layer 20, and the second layer structure 30 (i.e., the Z-axis direction), multiple first rigid regions 13 correspond to multiple second rigid regions 33 one by one. One first electrode layer 15 is provided on each first rigid region 13, and one second electrode layer 35 is provided on each second rigid region 33. The orthographic projection of one second electrode layer 35 on the first surface P1 overlaps at least partially with the orthographic projection of one first electrode layer 15 on the first surface P1.

[0111] In the embodiments of the present application, a pair of oppositely arranged first electrode layer 15 and second electrode layer 35 are provided on the first rigid region 13 and the second rigid region 33 that are oppositely arranged at any position. That is, in the embodiments of the present application, pressure sensors are provided at multiple positions, and the integration is relatively high, which is beneficial to improving the sensitivity of the three-dimensional sensor.

[0112] In some embodiments, as Figures 8 - 10 shown, the first layer structure 10 further includes multiple first connection lines L1. The first strain sensing layers 14 and the first electrode layers 15 corresponding to each row of the first rigid regions 13 are connected in series through one first connection line L1. The second layer structure 30 further includes multiple second connection lines L2. The second strain sensing layers 34 and the second electrode layers 35 corresponding to each column of the second rigid regions 33 are connected in series through one second connection line L2.

[0113] For example, taking the 3x3 array arrangement of the rigid regions as an example, in the first layer structure 10, taking the first rigid region 13 as a square, its side length is 10 mm. The distance between adjacent first rigid regions 13 is 7.5 mm. The first strain sensing layer 14 is 2.5 mm wide in the first direction X and 5 mm long in the second direction Y. For each row of the first rigid regions 13 arranged, the first strain sensing layer 14 is located in the middle of the adjacent first rigid regions 13. Along the first direction X, the distance between the edge of the first strain sensing layer 14 and the edge of the adjacent first rigid region 13 is 2.5 mm.

[0114] The second layer structure 30 is similar thereto, which is equivalent to the first layer structure 10 rotated by 90°.

[0115] Combined with the working principle described above, based on the strain enhancement and strain isolation effects of the rigid regions, when a strain along the first direction X is applied, the first strain sensing layer 14 corresponding to the first rigid regions 13 arranged in each row undergoes a large strain, and the equivalent resistance value increases significantly. The first connection line L1 can simplify the wiring design for each row and can measure the equivalent resistance of the first strain sensing layer 14, thereby realizing the detection of the strain in the first direction X.

[0116] Similarly, the second strain sensing layer 34 corresponding to the second rigid regions 33 arranged in each column can be used to detect the strain in the second direction Y. The second connection line L2 can simplify the wiring design for each row and can measure the equivalent resistance of the second strain sensing layer 34.

[0117] For the first electrode layer 15 and the second electrode layer 35 oppositely arranged at any position, by using either end of the first connection line L1 in series with the first electrode layer 15 and either end of the second connection line L2 in series with the second electrode layer 35, the two electrode plates of the capacitor are led out, thereby realizing the detection of the equivalent capacitance of the pressure sensor and further realizing the detection of the pressure in the Z-axis direction.

[0118] In the embodiments of the present application, the three-dimensional sensor has the advantages of high integration, simple structure, and high sensitivity.

[0119] In a second aspect, the present application further provides a method for manufacturing a three-dimensional sensor, as Figure 11 shown, Figure 11 is a flowchart of a method for manufacturing a three-dimensional sensor provided by the embodiments of the present application.

[0120] The manufacturing method includes the following steps S01 to step S04:

[0121] Step S01: Form the first layer structure 10. The first layer structure 10 includes a first substrate 11, at least one first strain sensing layer 14, and at least one first electrode layer 15. The first substrate 11 includes a first surface P1, and a plurality of first flexible regions 12 and a plurality of first rigid regions 13 located on the first surface P1. Along the first direction X parallel to the first surface P1, the first flexible regions 12 and the first rigid regions 13 are alternately arranged. The first strain sensing layer 14 is located in the first flexible regions 12, and the first electrode layer 15 is located in the first rigid regions 13.

[0122] Step S02: Form the second layer structure 30. The second layer structure 30 includes a second substrate 31, at least one second strain sensing layer 34, and at least one second electrode layer 35. The second substrate 31 includes a second surface, and a plurality of second flexible regions 32 and a plurality of second rigid regions 33 located on the second surface. Along a second direction Y parallel to the second surface, the second flexible regions 32 and the second rigid regions 33 are arranged alternately. The second direction Y intersects with the first direction X. The second strain sensing layer 34 is located in the second flexible regions 32, and the second electrode layer 35 is located in the second rigid regions 33.

[0123] Step S03: Form a dielectric layer 20 on the first layer structure 10. The dielectric layer 20 covers the first surface P1, the first strain sensing layer 14, and the first electrode layer 15.

[0124] Step S04: Dispose the second layer structure 30 on a side of the dielectric layer 20 away from the first layer structure 10. The second strain sensing layer 34 and the second electrode layer 35 are located on a side of the second substrate 31 close to the first layer structure 10. A positive projection of the second electrode layer 35 on the first surface P1 and a positive projection of the first electrode layer 15 on the first surface P1 overlap at least partially.

[0125] It should be noted that the above preparation method does not limit the sequence of each step. For example, step S01 and step S02 can be carried out synchronously, or step S02 can be carried out prior to step S01.

[0126] This preparation method is relatively simple and has a low cost. The three-dimensional sensor 100 prepared based on this preparation method has a simple structure and a low cost, has high sensitivity and high integration, and can achieve anisotropic response. For example, based on the strain enhancement and strain isolation effects of the rigid regions, the first strain sensing layer 14 in the first layer structure 10 is used to detect the stress in the first direction X, the second strain sensing layer 34 in the second layer structure 30 is used to detect the stress in the second direction Y, and the change in capacitance between the first electrode layer 15 and the second electrode layer 35 is used to realize the detection of the pressure in the Z-axis direction, thereby realizing three-dimensional detection.

[0127] In some embodiments, forming the first substrate 11 includes: combining the first flexible regions 12 and the first rigid regions 13 to form the first substrate 11. Alternatively, a first curing process is performed on a first region of the first base layer to form the first flexible regions 12, and a second curing process is performed on a second region of the first base layer to form the first rigid regions 13.

[0128] And / or, forming the second substrate 31 includes: combining the materials of the second flexible region 32 and the second rigid region 33 to form the second substrate 31. Alternatively, performing a first curing process on a first region of the second base layer to form the second flexible region 32, and performing a second curing process on a second region of the second base layer to form the second rigid region 33.

[0129] Taking the formation of the first substrate 11 as an example, the first flexible region 12 and the first rigid region 13 can be respectively formed by using two materials with large modulus differences, and then the first flexible region 12 and the first rigid region 13 are combined to form the required first substrate 11, for example Figure 2 , Figure 6 or Figure 9 as shown.

[0130] Alternatively, a polydimethylsiloxane colloid, a crosslinking agent, and a photoinitiator system are selected to form the first base layer, and its influence is exerted under light conditions. Under light, the crosslinking degree of the polydimethylsiloxane colloid is low, thereby forming the first flexible region 12, and the crosslinking degree of the polydimethylsiloxane colloid in the non-irradiated part is high, thereby forming the first rigid region 13.

[0131] For example, the polydimethylsiloxane colloid, the crosslinking agent, and the photoinitiator system can be mixed in a mass ratio of 20:1:0.2, then drop-coated on a release film, and then heated on a hot plate at 70°C for 20 minutes to make the polydimethylsiloxane colloid slightly crosslinked, obtaining the first base layer. Here, the first base layer is a flexible base layer.

[0132] Secondly, the entire first base layer is immersed in 100 ml of methacrylic acid for 30 minutes. The methacrylic acid will penetrate the entire first base layer, and then the excess methacrylic acid on the surface is removed.

[0133] Subsequently, a mask plate is covered on the first base layer, and ultraviolet light with an intensity of 50 mW / cm 2 is used for irradiation for 60 minutes. For the part of the first base layer not covered by the mask plate, the ultraviolet light can initiate the free radical polymerization of methacrylic acid to form a double crosslinking network with the polydimethylsiloxane colloid, forming a rigid region with a higher modulus, while the region not irradiated by the ultraviolet light remains a flexible region.

[0134] Among them, methacrylic acid can also be replaced by an aqueous solution of polyvinyl alcohol.

[0135] The formation of the second substrate 31 is the same in principle and will not be elaborated here.

[0136] The above preparation method is simple, the process is mature, and the cost is low. Based on the strain enhancement and strain isolation effects of the rigid region, it is beneficial to achieve anisotropic response.

[0137] In some embodiments, the material of the first strain sensing layer 14 includes at least one of conductive ink, silver nanowires or gold nanoparticles. Forming the first strain sensing layer 14 includes: forming the first strain sensing layer 14 by at least one of spin coating, blade coating, printing or screen printing. The above materials are of low price, with simple preparation methods, mature processes and low costs. The first strain sensing layer 14 formed based on this can be regarded as an equivalent resistance. Under the action of strain, its resistance value changes significantly and the sensitivity is high, so it can be used for stress detection.

[0138] And / or, the material of the second strain sensing layer 34 includes at least one of conductive ink, silver nanowires or gold nanoparticles. Forming the second strain sensing layer 34 includes: forming the second strain sensing layer 34 by at least one of spin coating, blade coating, printing or screen printing. The above materials are of low price, with simple preparation methods, mature processes and low costs. The second strain sensing layer 34 formed based on this can be regarded as an equivalent resistance. Under the action of strain, its resistance value changes significantly and the sensitivity is high, so it can be used for stress detection.

[0139] In some embodiments, the material of the first electrode layer 15 includes at least one of liquid metal or stretchable conductive polymer. Forming the first electrode layer 15 includes: forming the first electrode layer 15 by screen printing or printing. In some embodiments, the first connection line L1 is also synchronously formed during the process of forming the first electrode layer 15. The first connection line L1 connects the first strain sensing layer 14 and the first electrode layer 15 in series for each row. The above materials are of low price, with simple preparation methods, mature processes and low costs. The first electrode layer 15 formed based on this serves as one side electrode plate of the pressure sensor, and the first connection line L1 serves as a connection wire. When under stress or pressure, the equivalent resistance values of the first electrode layer 15 and the first connection line L1 hardly change, which is beneficial to improving the detection accuracy.

[0140] And / or, the material of the second electrode layer 35 includes at least one of liquid metal or stretchable conductive polymer. Forming the second electrode layer 35 includes: forming the second electrode layer 35 by screen printing or printing. In some embodiments, the second connection line L2 is also synchronously formed during the process of forming the second electrode layer 35. The second connection line L2 connects the second strain sensing layer 34 and the second electrode layer 35 in series for each column. The above materials are of low price, with simple preparation methods, mature processes and low costs. The second electrode layer 35 formed based on this serves as the other side electrode plate of the pressure sensor, and the second connection line L2 serves as a connection wire. When under stress or pressure, the equivalent resistance values of the second electrode layer 35 and the second connection line L2 hardly change, which is beneficial to improving the detection accuracy.

[0141] In some embodiments, forming the dielectric layer 20 includes: spin-coating a polydimethylsiloxane colloid and a cross-linking agent on the first layer structure 10 and curing to form the dielectric layer 20.

[0142] For example, a polydimethylsiloxane colloid and a cross-linking agent with a thickness of 500 microns can be spin-coated on the first layer structure 10, and then the second layer structure 30 is placed thereon, and the second strain sensing layer 34 and the second electrode layer 35 are located on the side of the second substrate 31 close to the first layer structure 10. After curing, the required three-dimensional sensor 100 can be formed.

[0143] As described above, only the specific embodiments of the present application are provided, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed in the present application, thinking of changes or substitutions, should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A three-dimensional sensor, characterized in that: comprising a first layer structure, a dielectric layer and a second layer structure stacked in sequence; The first layer structure includes a first substrate, the first substrate includes a plurality of first flexible areas and a plurality of first rigid areas; the first substrate includes a first surface close to one side of the second layer structure, and along a first direction parallel to the first surface, the first flexible areas and the first rigid areas are alternately arranged; The first layer structure further includes at least one first strain sensing layer and at least one first electrode layer, wherein the first strain sensing layer is arranged on a side of the first flexible region close to the second layer structure, and the first electrode layer is arranged on a side of the first rigid region close to the second layer structure; The second layer structure includes a second substrate, the second substrate includes a plurality of second flexible regions and a plurality of second rigid regions; The second flexible areas and the second rigid areas are arranged alternately along a second direction parallel to the first surface, and the second direction intersects the first direction; The second layer structure also includes at least one second strain sensing layer and at least one second electrode layer, the second strain sensing layer is arranged on the side of the second flexible zone close to the first layer structure, and the second electrode layer is arranged on the side of the second rigid zone close to the first layer structure; the orthographic projection of the second electrode layer on the first surface at least partially overlaps with the orthographic projection of the first electrode layer on the first surface.

2. The three-dimensional sensor according to claim 1, characterized in that: Along the first direction, the first strain sensing layer is arranged between two adjacent first rigid regions; and / or, Along the second direction, the second strain sensing layer is disposed between two adjacent second rigid regions.

3. The three-dimensional sensor according to claim 1, characterized in that: The first strain sensing layer is arranged at the outermost side of the plurality of first rigid regions along the first direction, the first strain sensing layer comprises an inner boundary and an outer boundary opposite to each other in the first direction, the first rigid region comprises an inner boundary and an outer boundary opposite to each other in the first direction, and an orthographic projection of the inner boundary of the first strain sensing layer on the first surface coincides with the outer boundary of the first rigid region; and / or, Along the second direction, the second strain sensing layer is arranged at the outermost side of the multiple second rigid regions, the second strain sensing layer includes an inner boundary and an outer boundary relative to each other in the second direction, the second rigid region includes an inner boundary and an outer boundary relative to each other in the second direction, and the orthographic projection of the inner boundary of the second strain sensing layer on the first surface coincides with the outer boundary of the second rigid region.

4. The three-dimensional sensor according to any one of claims 1 to 3, characterized in that: In the second direction, the boundary of the first strain sensing layer does not exceed the boundary of the first rigid region; and / or, In the first direction, a boundary of the second strain sensing layer does not exceed a boundary of the second rigid region.

5. The three-dimensional sensor according to any one of claims 1 to 3, characterized in that: The orthographic projection of the first electrode layer on the first surface is located in the region where the first rigid region is located; and / or, The orthographic projection of the second electrode layer on the first surface is located within the range of the orthographic projection of the second rigid region on the first surface.

6. The three-dimensional sensor according to claim 5, characterized in that: An outer contour of an orthographic projection of the second electrode layer on the first surface coincides with an outer contour of an orthographic projection of the first electrode layer on the first surface.

7. The three-dimensional sensor according to any one of claims 1 to 3, characterized in that: The first layer structure further includes a first connecting line, the first connecting line connecting the first strain sensing layer and the first electrode layer in series; The second layer structure further includes a second connection line, and the second connection line connects the second strain sensing layer and the second electrode layer in series.

8. The three-dimensional sensor according to any one of claims 1 to 3, characterized in that: The plurality of first rigid regions include a plurality of rows and a plurality of columns arranged in an array, the first rigid regions of each row are arranged along the first direction, and the first rigid regions of each column are arranged along the second direction; The first layer structure includes a plurality of the first strain sensing layers and a plurality of the first electrode layers, at least one of the first strain sensing layers is arranged on the first flexible areas alternately arranged with each row of first rigid areas, and at least one of the first electrode layers is arranged on each row of first rigid areas; and / or, The plurality of second rigid regions include a plurality of rows and a plurality of columns arranged in an array, the second rigid regions of each row are arranged along the first direction, and the second rigid regions of each column are arranged along the second direction; The second layer structure includes a plurality of the second strain sensing layers and a plurality of the second electrode layers, at least one of the second strain sensing layers is disposed on the second flexible areas alternately arranged with each column of the second rigid areas, and at least one of the first electrode layers is disposed on each column of the second rigid areas.

9. The three-dimensional sensor according to claim 8, characterized in that: Along the stacking direction of the first layer structure, the dielectric layer and the second layer structure, the plurality of first rigid regions correspond to the plurality of second rigid regions one by one; A first electrode layer is disposed on each first rigid region, a second electrode layer is disposed on each second rigid region, and an orthographic projection of a second electrode layer on the first surface at least partially overlaps with an orthographic projection of a first electrode layer on the first surface.

10. The three-dimensional sensor according to claim 8, characterized in that: The first layer structure further includes a plurality of first connection lines, and the first strain sensing layer and the first electrode layer corresponding to each row of the first rigid regions are connected in series via one first connection line; The second layer structure further includes a plurality of second connection lines, and the second strain sensing layer and the second electrode layer corresponding to each column of the second rigid regions are connected in series via one second connection line.

11. A method for preparing a three-dimensional sensor, characterized in that: include: forming a first layer structure, the first layer structure comprising a first substrate, at least one first strain sensing layer and at least one first electrode layer, the first substrate comprising a first surface, and a plurality of first flexible regions and a plurality of first rigid regions located on the first surface; Along a first direction parallel to the first surface, the first flexible areas and the first rigid areas are arranged alternately; the first strain sensing layer is located in the first flexible area, and the first electrode layer is located in the first rigid area; forming a second layer structure, the second layer structure comprising a second substrate, at least one second strain sensing layer and at least one second electrode layer, the second substrate comprising a second surface, and a plurality of second flexible regions and a plurality of second rigid regions located on the second surface; The second flexible area and the second rigid area are alternately arranged along a second direction parallel to the second surface, and the second direction intersects the first direction; the second strain sensing layer is located in the second flexible area, and the second electrode layer is located in the second rigid area; forming a dielectric layer on the first layer structure, wherein the dielectric layer covers the first surface, the first strain sensing layer and the first electrode layer; The second layer structure is arranged on a side of the dielectric layer away from the first layer structure, and the second strain sensing layer and the second electrode layer are located on a side of the second substrate close to the first layer structure; the orthographic projection of the second electrode layer on the first surface at least partially overlaps with the orthographic projection of the first electrode layer on the first surface.

12. The preparation method according to claim 11, characterized in that: Forming the first substrate includes: combining the first flexible area with the first rigid area to form the first substrate; or performing a first curing treatment on a first area of ​​the first base layer to form the first flexible area, and performing a second curing treatment on a second area of ​​the first base layer to form the first rigid area; And / or, forming the second substrate, including: combining the materials of the second flexible zone and the second rigid zone to form the second substrate; or, performing a first curing treatment on the first area of ​​the second base layer to form the second flexible zone, and performing a second curing treatment on the second area of ​​the second base layer to form the second rigid zone.

13. The preparation method according to claim 11, characterized in that: The material of the first strain sensing layer includes at least one of conductive ink, silver nanowires or gold nanoparticles, and forming the first strain sensing layer includes: forming the first strain sensing layer by at least one of spin coating, scraping, printing or screen printing; and / or, The material of the second strain sensing layer includes at least one of conductive ink, silver nanowires or gold nanoparticles, and forming the second strain sensing layer includes: forming the second strain sensing layer by at least one of spin coating, scraping, printing or screen printing.

14. The preparation method according to claim 11, characterized in that: The material of the first electrode layer includes at least one of liquid metal and stretchable conductive polymer, and forming the first electrode layer includes: forming the first electrode layer by screen printing or printing; and / or, The material of the second electrode layer includes at least one of liquid metal and stretchable conductive polymer, and forming the second electrode layer includes: forming the second electrode layer by screen printing or printing.

15. The preparation method according to claim 11, characterized in that: The dielectric layer is formed, comprising: spin coating polydimethylsiloxane colloid and a cross-linking agent on the first layer structure and curing the same to form the dielectric layer.

Images