High-Q-value light force sensing device based on silicon nitride film

Abstract

The invention discloses a high-Q-value light force sensing device based on a silicon nitride film, and belongs to the technical field of quantum sensing and quantum optics. The low-noise coherent light system outputs probe light and Local light; probe light is injected into the pressure sensor system; the pressure sensing system is positioned in the vacuum system; the pressure sensing system extracts probe light of the modulation signal with the fixed frequency and injects the probe light into the balance zero beat detection system, Local light is also injected into the balance zero beat detection system, and the modulation signal with the fixed frequency is read; the balance zero beat detection system is electrically connected to the high-precision auxiliary locking loop system; then connecting to a Local light phase controller to adjust the phase of the Local light; the balance zero beat detection system is electrically connected to the quality factor evaluation system; according to the invention, under the condition of ensuring a relatively high quality factor, the characteristic of small cavity volume is still ensured, and the cavity length of the film cavity is adjustable, so that a light field can be effectively enhanced, and improvement of the sensitivity of light force sensing is facilitated.

Description

Technical Field

[0001] The present invention belongs to the technical fields of quantum sensing and quantum optics, and particularly relates to a high-Q optomechanical sensing device based on a silicon nitride thin film. Background Art

[0002] The interaction between light and matter is an important research field in quantum optics. In this field, although cavity optomechanics emerged relatively late, it has become one of the research hotspots due to its unique properties and broad application prospects. The main research object of cavity optomechanics is the interaction between the optical field in an optical cavity and a mesoscopic mechanical oscillator through radiation pressure. Its research content involves not only quantum optics, but also micro-nano photonics, materials science, mechanical science and other fields.

[0003] Traditional optomechanical sensors place a silicon nitride thin film in the middle of a Fabry-Perot resonator, and obtain the position information of the thin film by measuring the resonance frequency of the resonator. However, the design and adjustment of a Fabry-Perot resonator are relatively complex, requiring high optical alignment accuracy. This may lead to difficulties in debugging and maintaining the device in practical applications.

[0004] Therefore, it is necessary to realize a sensing device with a high quality factor (Q factor) in experiments, which means less energy loss in the optical cavity, thereby improving the sensitivity and signal-to-noise ratio of the sensor. And the device should be easy to carry and install, and suitable for applications in different environments. Summary of the Invention

[0005] The present invention overcomes the deficiencies of the prior art and provides a high-Q optomechanical sensing device based on a silicon nitride thin film, solving the problems of low sensitivity and signal-to-noise ratio and inconvenient use of existing optomechanical sensing devices. The present invention is realized by the following technical solutions: A high-Q optomechanical sensing device based on a silicon nitride thin film includes a low-noise coherent light system, a pressure sensor system, a vacuum system, a balanced homodyne detection system, a Local light phase controller, a quality factor evaluation system, and a high-precision auxiliary locking loop system; the low-noise coherent light system outputs probe light and Local light; the probe light is injected into the pressure sensor system; the pressure sensing system is located in the vacuum system; the probe light that extracts a modulation signal with a fixed frequency in the pressure sensing system is injected into the balanced homodyne detection system, and the Local light is also injected into the balanced homodyne detection system to read out the modulation signal with a fixed frequency; the balanced homodyne detection system is electrically connected to the high-precision auxiliary locking loop system, and then connected to the Local light phase controller to adjust the phase of the Local light; the balanced homodyne detection system is electrically connected to the quality factor evaluation system.

[0006] Furthermore, the probe light passes through a half-wave plate to adjust the polarization, and is all transmitted through the polarization beam splitter PBS. After passing through a quarter-wave plate, it is injected into the pressure sensing system placed in the vacuum system; the pressure sensing system extracts the probe light of the modulation signal with a fixed frequency and reflects it out of the vacuum system. After adjusting the polarization again through the quarter-wave plate, it is all reflected by the polarization beam splitter PBS to a 50:50 beam splitter; the Local light passes through the Local light phase controller and is then injected into the 50:50 beam splitter; it is injected into the balanced homodyne detection system through the 50:50 beam splitter.

[0007] Furthermore, the balanced homodyne detection system includes a balanced homodyne detector; the high-precision auxiliary locking loop system includes a mixer, a signal driver, a PID controller, and an HV controller; the powers of the two-arm beams after being split by the 50:50 beam splitter are equal. The Local light and the probe light interfere on the 50:50 beam splitter and are jointly injected into the balanced homodyne detector for operation; the balanced homodyne detector is electrically connected to the mixer; the signal driver is electrically connected to the mixer, and the mixer is electrically connected to the PID controller; the PID controller is electrically connected to the HV controller; the HV controller is electrically connected to the Local light phase controller.

[0008] Furthermore, the output end of the balanced homodyne detector is connected to a spectrum analyzer. After analyzing the signal in the balanced homodyne detector, the modulation signal with a fixed frequency can be read out, and the quality factor of the pressure sensing device can be analyzed.

[0009] Furthermore, the pressure sensor system includes a thin film sleeve frame part and a high-reflection plane mirror part. The thin film sleeve frame part is used to adjust the relative position between the detection beam and the silicon nitride thin film; after the quantum light enters the pressure sensor system, it interacts with the silicon nitride thin film, is reflected by the high-reflection plane mirror, and the modulation signal with a fixed frequency of the silicon nitride thin film is read out.

[0010] Furthermore, the thin film sleeve frame part includes a base. On the upper surface of the base, a sleeve mounting plate is integrally provided. A sleeve through hole is provided on the sleeve mounting plate, and a sleeve body is installed in the sleeve through hole. The sleeve body is a hollow cylinder, and the front end of the sleeve body places the silicon nitride thin film.

[0011] Furthermore, there are three grooves at the front end of the sleeve body for placing the silicon nitride thin film. The silicon nitride thin film is fixed with a resin-type sealant, and the front end of the sleeve body part is sunken, so that the silicon nitride thin film is in a state of being fixed at three points and suspended at one point.

[0012] Furthermore, longitudinal adjustment threaded holes are provided on the upper surface of the sleeve mounting plate, and longitudinal adjustment threaded rubber set screws are arranged in the longitudinal adjustment threaded holes. The longitudinal adjustment threaded holes are directly above the sleeve body. On one side of the sleeve mounting plate, transverse adjustment threaded holes are provided, and transverse adjustment threaded rubber set screws are arranged in the transverse adjustment threaded holes. Both the longitudinal adjustment threaded holes and the transverse adjustment threaded holes communicate with the sleeve through holes. The position of the sleeve body is adjusted through the combined cooperation of the longitudinal adjustment threaded rubber set screws and the transverse adjustment threaded rubber set screws.

[0013] Furthermore, the high-reflection plane mirror part includes an electric mirror frame. An aluminum gasket is arranged at the original lens position of the electric mirror frame. A piezoelectric ceramic is adhered to the aluminum gasket, and a high-reflection lens is adhered to the piezoelectric ceramic.

[0014] Furthermore, a piezoelectric ceramic signal line through hole is provided on the front surface of the aluminum gasket for applying voltage to the piezoelectric ceramic. The aluminum gasket and the piezoelectric ceramic are adhered with ultraviolet quick-drying glue, and the piezoelectric ceramic and the high-reflection lens are adhered with ultraviolet quick-drying glue. The distance between the high-reflection plane mirror part and the thin film sleeve frame part is changed through the piezoelectric ceramic.

[0015] The beneficial effects of the present invention compared with the prior art are as follows: A high-Q optomechanical sensing device based on a silicon nitride thin film provided by the present invention uses a low-finesse optical cavity with a very short length to amplify the radiation pressure signal of the thin film, and uses a probe light to read out the modulation signal with a fixed frequency. Under the condition of ensuring a relatively high quality factor, the device still ensures the characteristic of a very small cavity volume, and the cavity length of the thin film cavity is adjustable, which can effectively enhance the light field and help improve the sensitivity of optomechanical sensing.

[0016] The designed structure of the optomechanical sensing device described in the present invention is simple, reducing the complexity of manufacturing and maintenance, lowering the usage threshold, and being able to conveniently read the vibration modes of multiple thin films, adapting to various measurement requirements, enhancing the flexibility and application range of the device. Moreover, the device has the advantages of simple operation, reusable, easy to maintain and repair, and adaptable to thin film mechanical oscillators of different materials, reducing costs and resource waste, and meeting the requirements of sustainable development. Description of the Drawings

[0017] Figure 1 It is a schematic diagram of the principle for the optomechanical sensing device described in the present invention to measure the quality factor of a thin film; Figure 2 It is a schematic diagram of the principle for the optomechanical sensing device described in the present invention to measure the resonance frequency of a thin film; Figure 3 It is a device diagram of the pressure sensor system of the optomechanical sensing device described in the present invention; Figure 4It is a detailed device diagram of the high-reflection flat mirror part in the pressure sensor system of the optomechanical sensing device described in the present invention; Figure 5 It is a detailed device diagram of the thin film sleeve frame part in the pressure sensor system of the optomechanical sensing device described in the present invention; Figure 6 It is a schematic diagram of the high-precision auxiliary locking loop system of the optomechanical sensing device described in the present invention; Figure 7 It is the test result of the optomechanical sensing device described in the present invention for reading the modulation signal using the probe light.

[0018] Reference numerals in the figure: 1 - Low-noise coherent light system, 2 - Vacuum system, 3 - Pressure sensor system, 4 - Local optical phase controller, 5 - Balanced homodyne detection system, 6 - High-precision auxiliary locking loop system, 7 - Quality factor evaluation system, 8 - Half-wave plate, 9 - Polarizing beam splitter, 10 - Quarter-wave plate, 11 - 50:50 beam splitter, 12 - Balanced homodyne detector BHD, 13 - Mixer, 14 - Signal driver, 15 - Spectrum analyzer, 16 - Thin film sleeve frame part, 17 - Sleeve body, 18 - Silicon nitride thin film, 19 - High-reflection lens, 20 - Piezoelectric ceramic, 21 - Aluminum gasket, 22 - Electric mirror mount, 23 - Piezoelectric ceramic signal wire, 24 - Piezoelectric ceramic card slot, 25 - Piezoelectric ceramic signal wire through hole, 26 - Aluminum gasket fixing groove, 27 - Silicon nitride thin film fixing groove, 28 - Sinking groove, 29 - Horizontal adjustment threaded hole, 30 - Vertical adjustment threaded hole, 31 - Base, 32 - Sleeve mounting plate, 33 - Sleeve through hole, 34 - Rounded concave hole. Specific implementation mode

[0019] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail in combination with embodiments and drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. The technical solutions of the present invention will be described in detail below in combination with embodiments and drawings, but the protection scope is not limited by this.

[0020] This embodiment proposes a high-Q optomechanical sensing device based on a silicon nitride thin film, including a low-noise coherent light system 1, a pressure sensor system 3, a vacuum system 2, a balanced homodyne detection system 5, a quality factor evaluation system 7 and a high-precision auxiliary locking loop system 6; The low-noise coherent light system 1 outputs probe light and Local light; the probe light is injected into the pressure sensor system 3; the pressure sensing system 3 is placed in the vacuum system 2.

[0021] The pressure sensor system 3 includes a thin-film sleeve frame part 16 and a highly reflective plane mirror part, forming a low-finesse optical cavity with a very short length to amplify the radiation pressure signal of the thin film. The thin-film sleeve frame part 16 can adjust the relative position of the probe beam and the silicon nitride thin film 18. It includes a base 31. On the upper surface of the base 31, a sleeve mounting plate 32 is integrally provided. On the sleeve mounting plate 32, a sleeve through-hole 33 is provided. A sleeve body 17 is installed in the sleeve through-hole 33. The sleeve body is a hollow cylinder. At the front end of the sleeve body 17, there are three grooves for placing the silicon nitride thin film 18. The silicon nitride thin film 18 is fixed using a resin-type sealant. The front end of the sleeve body 17 part is sunken, so that the silicon nitride thin film 18 is in a state of being fixed at three points and suspended at one point. On the upper surface of the sleeve mounting plate 32, a longitudinal adjustment threaded hole 30 is provided. In the longitudinal adjustment threaded hole 30, a longitudinal adjustment threaded rubber set screw is provided. The longitudinal adjustment threaded hole 30 is directly above the sleeve body 17. On one side of the sleeve mounting plate 32, a transverse adjustment threaded hole 29 is provided. In the transverse adjustment threaded hole 29, a transverse adjustment threaded rubber set screw is provided. Both the longitudinal adjustment threaded hole 30 and the transverse adjustment threaded hole 29 communicate with the sleeve through-hole 33. The position of the sleeve body 17 is adjusted through the combined action of the longitudinal adjustment threaded rubber set screw and the transverse adjustment threaded rubber set screw.

[0022] The highly reflective plane mirror part is a highly reflective electric mirror frame that can adjust the cavity length of the thin-film cavity. It includes an electric mirror frame 22. At the original lens position of the electric mirror frame 22, an aluminum gasket 21 is provided. A piezoelectric ceramic 20 is adhered to the aluminum gasket 21. A highly reflective lens 19 is adhered to the piezoelectric ceramic 20. The electric mirror frame 22 can be adjusted outside the vacuum system. On the front surface of the aluminum gasket 21, a piezoelectric ceramic card slot 24 is provided for fixing the position of the piezoelectric ceramic 20. On the front surface of the aluminum gasket 21, a piezoelectric ceramic signal line through-hole 25 is provided for applying a voltage to the piezoelectric ceramic 20. The aluminum gasket 21 and the piezoelectric ceramic 20 are adhered with ultraviolet quick-drying glue. The piezoelectric ceramic 20 and the highly reflective lens 19 are adhered with ultraviolet quick-drying glue. The distance between the highly reflective plane mirror part and the thin-film sleeve frame part 16 can be changed through the piezoelectric ceramic 20.

[0023] The thin-film sleeve frame part 16 and the highly reflective plane mirror part constitute the pressure sensor system 3. The thin-film sleeve frame part 16 is placed at the front end of the highly reflective plane mirror part. The silicon nitride thin film 18 is closely close to the highly reflective plane mirror part. The piezoelectric ceramic 20 is used to adjust the cavity length of the silicon nitride thin film cavity.

[0024] The probe light injection balanced homodyne detection system 5 that extracts the modulation signal with a fixed frequency, and the Local light is also injected into the balanced homodyne detection system 5 to read out the modulation signal with a fixed frequency. The balanced homodyne detection system 5 is electrically connected to the high-precision auxiliary locking loop system 6; The balanced homodyne detection system 5 includes a balanced homodyne detector 12; the high-precision auxiliary locking loop system 6 includes a mixer 13, a signal driver 14, a PID controller, and an HV controller. The balanced homodyne detector 12 is electrically connected to the mixer 13; the signal driver 14 is electrically connected to the mixer 13, and the mixer 13 is electrically connected to the PID controller; the PID controller is electrically connected to the HV controller; the HV controller is electrically connected to the Local optical phase controller 4; the Local optical phase controller 4 controls the phase of the Local light.

[0025] The balanced homodyne detection system 5 is electrically connected to the quality factor evaluation system 7.

[0026] See Figure 1 , which is a schematic diagram of the principle of measuring the quality factor of the thin film by the optomechanical sensing device. The low-noise coherent optical system 1 outputs a probe light and a Local light; the probe light is injected into the pressure sensor system 3 placed in the vacuum system 2 to extract a modulation signal with a fixed frequency, and the quality factor of the pressure sensing device is improved by using a high vacuum degree. The probe light that extracts the modulation signal with a fixed frequency is injected into the balanced homodyne detection system 5, and the Local light is also injected into the balanced homodyne detection system 5 to read out the modulation signal with a fixed frequency; the balanced homodyne detection system 5 is electrically connected to the high-precision auxiliary locking loop system 6 and then connected to the Local optical phase controller 4 to adjust the phase of the Local light. The balanced homodyne detection system 5 is electrically connected to the quality factor evaluation system 7.

[0027] See Figure 2, which is a schematic diagram of the principle for the optomechanical sensing device to measure the resonance frequency of the thin film. The probe light passes through the half-wave plate 8 to adjust the polarization, and is all transmitted through the polarization beam splitter PBS 9. After passing through the quarter-wave plate 10, it is injected into the pressure sensing system 3 placed in the vacuum system 2 to extract a modulation signal with a fixed frequency. The probe light carrying the modulation signal reflects out of the vacuum system 2. After the polarization is adjusted again by the quarter-wave plate 10, it is all reflected by the polarization beam splitter PBS 9 to the 50:50 beam splitter 11. The Local light passes through the Local light phase controller 4 and is then injected into the 50:50 beam splitter 11. The powers of the two split-arm light beams are equal. Subsequently, the two split-arm light beams are jointly injected into the balanced homodyne detector 12 for operation. The balanced homodyne detector 12 is electrically connected to the mixer 13, and the signal drive source 14 is also electrically connected to the mixer 13 for mixing and demodulation. The mixer 13 is electrically connected to the Local light phase controller 4 to control the phase of the Local light through the Local light phase controller 4. The output end of the balanced homodyne detector 12 is connected to a spectrum analyzer 15. After analyzing the signal in the balanced homodyne detector 12, the spectrum analyzer 15 can read out the modulation signal with a fixed frequency and analyze the quality factor of the pressure sensing device.

[0028] Figure 3 It is an exploded view of the pressure sensor system 3 in the optomechanical sensing device. The pressure sensor system 3 includes a thin film sleeve frame part 16 and a high-reflection flat mirror part. After the quantum light enters the pressure sensor system 3, it interacts with the silicon nitride thin film 18, is reflected by the high-reflection flat mirror 19, and the modulation signal with a fixed frequency of the silicon nitride thin film is read out.

[0029] Figure 4 It is a detailed device diagram of the high-reflection flat mirror part in the pressure sensor system 3. The high-reflection lens 19 is glued to the piezoelectric ceramic 20 with ultraviolet quick-drying glue. Then, the piezoelectric ceramic 20 is placed in the piezoelectric ceramic slot 24 of the aluminum gasket 21, and the piezoelectric ceramic signal wire 23 is passed through the piezoelectric ceramic signal wire through-hole 25. The aluminum gasket 21 is placed in the aluminum gasket fixing slot 26 in the electric mirror mount 22. This device can adjust the angle between the high-reflection lens 19 and the silicon nitride thin film 18 through the electric mirror mount 22, and adjust the distance between the high-reflection lens 19 and the silicon nitride thin film 18 through the piezoelectric ceramic 20.

[0030] Figure 5It is a detailed device diagram of the thin film sleeve frame part 16 in the pressure sensor system 3. This device fixes the thin film sleeve frame part 16 through the rounded concave hole 34 on the base 31, places the sleeve body 17 into the sleeve through hole 33 on the sleeve mounting plate 32, and adjusts the position of the crown surface of the sleeve body 17 through the horizontal adjustment threaded hole 29, the horizontal adjustment threaded rubber set screw, the vertical adjustment threaded hole 30, and the vertical adjustment threaded rubber set screw. The distance between the high-reflection lens 19 and the silicon nitride thin film 18 is roughly adjusted by the front and rear positions of the sleeve body 17. There are three silicon nitride thin film fixing grooves 27 at the front end of the sleeve body 17 for placing the silicon nitride thin film 18, and the silicon nitride thin film 18 is fixed using a resin-based sealant. A sunken groove 28 is made at the front end of the sleeve body 17 part, so that the silicon nitride thin film 18 is in a state of being fixed at three points and suspended at one point.

[0031] Figure 6 It is a schematic diagram of the high-precision auxiliary locking loop system of the optomechanical sensing device of the present invention. The balanced homodyne detection system 5 is electrically connected to the mixer 13. The AC signal output by the balanced homodyne detection system 5 and the signal output by the signal driving source are mixed and demodulated, and the mixer 13 is electrically connected to the PID controller, and then through the HV controller, it is electrically connected to the Local optical phase controller 4, and the phase of the Local light is controlled by the Local optical phase controller.

[0032] The solution of this application provides a device which, under the condition of ensuring a relatively high quality factor, has the cavity characteristic of a small volume, and the cavity length of the thin film cavity is adjustable, which can effectively enhance the optical field, thereby improving the sensitivity of optomechanical sensing. In addition, the device of the present invention has the advantages of simple operation, reusable, easy to maintain and repair, and is suitable for thin film mechanical oscillators of different materials. The optomechanical sensing device described in the present invention has the advantages of high quality factor, simple operation and reusable, and has important application value.

[0033] The above content is a further detailed description of the present invention in combination with specific preferred embodiments. It cannot be determined that the specific embodiments of the present invention are limited to this. For those of ordinary skill in the technical field to which the present invention belongs, without departing from the premise of the present invention, several simple deductions or substitutions can still be made, and all should be regarded as belonging to the scope of patent protection determined by the claims submitted by the present invention.

Claims

1. A high-Q optical force sensing device based on silicon nitride film, characterized in that: The invention comprises a low-noise coherent optical system (1), a pressure sensor system (3), a vacuum system (2), a balanced zero-beat detection system (5), a local light phase controller (4), a quality factor evaluation system (7) and a high-precision auxiliary locking loop system (6); the low-noise coherent optical system (1) outputs probe light and local light; the probe light is injected into the pressure sensor system (3); the pressure sensor system (3) is located in the vacuum system (2); the probe light of a fixed-frequency modulation signal extracted from the pressure sensor system (3) is injected into the balanced zero-beat detection system (5), and the local light is also injected into the balanced zero-beat detection system (5) to read out the fixed-frequency modulation signal; the balanced zero-beat detection system (5) is electrically connected to the high-precision auxiliary locking loop system (6); and then connected to the local light phase controller (4) to adjust the phase of the local light; the balanced zero-beat detection system (5) is electrically connected to the quality factor evaluation system (7).

2. The high-Q optical force sensing device based on silicon nitride film according to claim 1, characterized in that: The probe light passes through a half wave plate (8) to adjust polarization, is fully transmitted through a polarization beam splitter PBS (9), and is injected into a pressure sensing system (3) placed in a vacuum system (2) after passing through a quarter wave plate (10); the probe light of a modulation signal with a fixed frequency is extracted from the pressure sensing system (3) and is reflected out of the vacuum system (2), and is again adjusted in polarization through a quarter wave plate (10), and is fully reflected to a 50:50 beam splitter (11) through a polarization beam splitter PBS (9); the local light passes through a local light phase controller (4) and is injected into a 50:50 beam splitter (11); and is injected into a balanced zero-beat detection system (5) through the 50:50 beam splitter (11).

3. The high-Q optical force sensing device based on silicon nitride film according to claim 2, characterized in that: The balanced zero-beat detection system (5) comprises a balanced zero-beat detector (12); the high-precision auxiliary locking loop system (6) comprises a mixer (13), a signal driving source (14), a PID controller, and an HV controller; the powers of the two arm light beams after being split by a 50:50 beam splitter (11) are equal, and the local light and the probe light interfere on the 50:50 beam splitter (11) and are injected into the balanced zero-beat detector (12) for detection; the balanced zero-beat detector (12) is electrically connected to the mixer (13); the signal driving source (14) is electrically connected to the mixer (13), and the mixer (13) is electrically connected to the PID controller; the PID controller is electrically connected to the HV controller; and the HV controller is electrically connected to the local light phase controller (4).

4. The high-Q optical force sensing device based on silicon nitride film according to claim 3, characterized in that: The output end of the balanced zero-beat detector (12) is connected to a spectrum analyzer (15). After the spectrum analyzer (15) analyzes the signal in the balanced zero-beat detector (12), it can read out the modulation signal with a fixed frequency and analyze the quality factor of the pressure sensor device.

5. The high-Q optical force sensing device based on silicon nitride film according to claim 4, characterized in that: The pressure sensor system (3) comprises a film sleeve frame part (16) and a high-reflection plane mirror (19). The film sleeve frame part (16) is used to adjust the relative position of the probe light and the silicon nitride film. After the quantum light is injected into the pressure sensor system (3), it interacts with the silicon nitride film (18) and is reflected by the high-reflection plane mirror (19), thereby reading out the modulation signal of the silicon nitride film with a fixed frequency.

6. The high-Q optical force sensing device based on silicon nitride film according to claim 5, characterized in that: The film sleeve frame part (16) comprises a base (31), a sleeve mounting plate (32) is integrally provided on the upper surface of the base (31), a sleeve through hole (33) is provided on the sleeve mounting plate (32), a sleeve body (17) is installed in the sleeve through hole (33), the sleeve body is a hollow cylinder, and a silicon nitride film (18) is placed at the front end of the sleeve body (17).

7. The high-Q optical force sensing device based on silicon nitride film according to claim 6, characterized in that: The front end of the sleeve body (17) has three grooves for placing the silicon nitride film (18). The silicon nitride film (18) is fixed using a resin sealant. The front end of the sleeve body (17) is sunken so that the silicon nitride film (18) is fixed at three points and suspended at one point.

8. A high-Q optical force sensing device based on silicon nitride film according to claim 6 or 7, characterized in that: A longitudinal adjustment threaded hole (30) is provided on the upper surface of the sleeve mounting plate (32), and a longitudinal adjustment threaded rubber top screw is provided in the longitudinal adjustment threaded hole (30). The longitudinal adjustment threaded hole (30) is directly above the sleeve body (17). A transverse adjustment threaded hole (29) is provided on one of the side surfaces of the sleeve mounting plate (32), and a transverse adjustment threaded rubber top screw is provided in the transverse adjustment threaded hole (29). Both the longitudinal adjustment threaded hole (30) and the transverse adjustment threaded hole (29) are connected to the sleeve through hole (33), and the position of the sleeve body (17) is adjusted by the cooperation of the longitudinal adjustment threaded rubber top screw and the transverse adjustment threaded rubber top screw.

9. The high-Q optical force sensing device based on silicon nitride film according to claim 6, characterized in that: The high-reflection plane mirror portion comprises an electric mirror frame (22), an aluminum gasket (21) is arranged at the original lens position of the electric mirror frame (22), a piezoelectric ceramic (20) is adhered to the aluminum gasket (21), and a high-reflection lens (19) is adhered to the piezoelectric ceramic (20).

10. The high-Q optical force sensing device based on silicon nitride film according to claim 9, characterized in that: A piezoelectric ceramic signal line through hole (25) is provided on the front side of the aluminum gasket (21) for loading voltage onto the piezoelectric ceramic (20); the aluminum gasket (21) and the piezoelectric ceramic (20) are bonded together with ultraviolet quick-drying glue; the piezoelectric ceramic (20) and the high-reflection lens (19) are bonded together with ultraviolet quick-drying glue; and the distance between the high-reflection plane mirror portion and the film sleeve frame portion (16) is changed through the piezoelectric ceramic (20).

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