Center air inlet gas uniformizing structure and plasma etching machine

Abstract

The invention discloses a central gas inlet and uniformizing structure and a plasma etcher, the central gas inlet and uniformizing structure comprises a central gas inlet disc and a central gas uniformizing disc, the central gas inlet disc and the central gas uniformizing disc form a central gas injection passage and a plurality of edge gas injection passages, and the plurality of edge gas injection passages are arranged around the central gas injection passage. The center gas inlet and uniformizing structure comprises the center gas injection channel and the multiple edge gas injection channels, process gas can be introduced into the middle through the center gas injection channel, and process gas can be introduced into the edges through the multiple edge gas injection channels. Compared with the prior art, the uniformity of air intake to the plasma reaction chamber is improved, and the uniformity of the etching rate of the plasma etching machine is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a central air intake and uniform air structure and a plasma etcher. Background Art

[0002] At present, the edge nozzle of the plasma etcher is far away from the wafer, which easily acts only on the edge of the wafer, resulting in a faster etching rate at the edge. The central nozzle of the plasma etcher sprays too much towards the center of the wafer, which easily leads to a faster etching rate at the center of the wafer. Under the combined effect of the two, the etching rate is likely to be slower near half the diameter of the wafer.

[0003] Therefore, how to improve the uniformity of the etching rate of the plasma etcher has become a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0004] The invention provides a central air intake uniform gas structure and a plasma etcher to improve the uniformity of the etching rate of the plasma etcher.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] In a first aspect, the present invention provides a central air intake and air uniforming structure, comprising a central air intake disk and a central air uniforming disk, wherein the central air intake disk and the central air uniforming disk form a central jet passage and multiple edge jet passages, and the multiple edge jet passages are arranged around the central jet passage.

[0007] Optionally, in the above central air intake and uniform air flow structure, the distances between the plurality of edge air jet passages and the central air jet passage are the same.

[0008] Optionally, in the above-mentioned central air intake and uniform air flow structure, the included angles of two adjacent edge jet passages among the plurality of edge jet passages are the same.

[0009] Optionally, in the above-mentioned central air intake and uniform air flow structure, the central air intake disk includes a first air intake pipe, a first air branch hole, a first air intake hole, a second air intake pipe and a second air intake hole, wherein the first air intake pipe is used to communicate with the central air source; the first air branch hole communicates with the first air intake pipe and the first air intake hole; the first air intake hole is located at the edge of the central air intake disk and extends in the axial direction; the second air intake pipe is used to communicate with the central air source and communicate with the second air intake hole; the second air intake hole is located in the middle of the central air intake disk and extends in the axial direction;

[0010] The central gas distribution plate includes a first connecting hole, a second connecting hole, a first spray hole and a second spray hole, wherein the first connecting hole is connected to the first air inlet hole, and the second spray hole is connected to the second air inlet hole; the second connecting hole connects the first spray hole and the first connecting hole, and the second connecting hole extends radially;

[0011] A first air inlet hole, a first communication hole, a second communication hole, and a first spray hole form an edge jet path; a second air inlet hole and a second spray hole form a central jet path.

[0012] Optionally, in the above-mentioned central air intake and air distribution structure, the central air distribution disc includes an embedding section and an extending section. Among them, the embedding section is embedded into the mounting hole of the dielectric window, and the extending section extends radially away from the axis from the embedding section.

[0013] Optionally, in the above-mentioned central air intake and air distribution structure, the first communication hole is arranged in the embedding section, and the second communication hole and the first spray hole are arranged in the extending section.

[0014] Optionally, in the above-mentioned central air intake and air distribution structure, the first spray hole extends along the axial direction; or the first spray hole is arranged obliquely with respect to the axial direction.

[0015] Optionally, in the above-mentioned central air intake and air distribution structure, a spray chamfer is provided at the nozzle of the second spray hole.

[0016] Optionally, in the above-mentioned central air intake and air distribution structure, the first air inlet pipe and the second air inlet pipe are the same air inlet pipe, or the first air inlet pipe and the second air inlet pipe are different air inlet pipes.

[0017] In a second aspect, the present invention provides a plasma etching machine, including a plasma reaction chamber, a dielectric window, a central gas source, and a central air intake and air distribution structure as described in any one of the above. Among them, the dielectric window closes the upper part of the plasma reaction chamber, and the central air intake and air distribution structure is arranged at the center of the dielectric window and is communicated with the central gas source.

[0018] Optionally, in the above-mentioned plasma etching machine, the plasma etching machine further includes an upper cover. Among them, the dielectric window is located at the opening of the upper cover, and the dielectric window is used to arrange the central air intake and air distribution structure; the upper cover is used to be installed at the opening of the plasma reaction chamber.

[0019] Optionally, in the above-mentioned plasma etching machine, the plasma etching machine further includes a lining, and the lining wraps around the opening of the upper cover.

[0020] Optionally, in the above-mentioned plasma etching machine, the lining includes a first lining section extending along the axial direction and a second lining section extending along the radial direction. Among them, the first lining section corresponds to the wall of the opening of the upper cover, and the second lining section overlaps all or part of the end face of the upper cover close to the plasma reaction chamber.

[0021] Optionally, in the above-mentioned plasma etching machine, a guiding section is provided at the connecting part of the second lining section and the first lining section.

[0022] Optionally, in the above-mentioned plasma etching machine, a stepped surface is provided on a part of the end face of the upper cover close to the plasma reaction chamber, and the second lining section is installed on the stepped surface.

[0023] Optionally, in the above plasma etcher, the central gas inlet and gas distribution structure's central gas inlet disk is directly arranged on or embedded in the end face of the dielectric window away from the plasma reaction chamber.

[0024] Optionally, in the above plasma etcher, the central gas distribution disk of the central gas inlet and gas distribution structure can be directly arranged on or embedded in the end face of the dielectric window close to the plasma reaction chamber.

[0025] Optionally, in the above plasma etcher, a seal is provided between any two of the central gas inlet disk, the central gas distribution disk, and the dielectric window.

[0026] Optionally, in the above plasma etcher, the seal includes a first sealing ring and a second sealing ring. Among them, the first sealing ring and the second sealing ring are arranged on the end face where the central gas inlet disk and the central gas distribution disk are in contact.

[0027] Optionally, in the above plasma etcher, the seal includes a third sealing ring and a fourth sealing ring. Among them, the third sealing ring and the fourth sealing ring are arranged on the circumferential surface where the central gas distribution disk and the dielectric window are in contact.

[0028] Optionally, in the above plasma etcher, the dielectric window and / or the central gas inlet and gas distribution structure is made of a non-metallic material.

[0029] It can be seen from the above technical solutions that the central gas inlet and gas distribution structure of the present invention includes a central gas jetting passage and a plurality of edge gas jetting passages. Through the central gas jetting passage, process gas can be passed through the middle, and through the plurality of edge gas jetting passages, process gas can be passed through the edges. Compared with the prior art, the uniformity of gas inlet into the plasma reaction chamber is improved, and the uniformity of the etching rate of the plasma etcher is improved. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some examples or embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the provided drawings, and the present invention can also be applied to other similar scenarios according to the provided drawings. Unless obvious from the language context or otherwise stated, the same reference numerals in the figures represent the same structure or operation.

[0031] Figure 1 Schematic diagram of a plasma etcher provided by an embodiment of the present invention;

[0032] Figure 2 Schematic diagram of another plasma etcher provided by an embodiment of the present invention;

[0033] Figure 3 is Figure 2 a partial bottom view of the plasma etching machine shown;

[0034] Figure 4 is Figure 3 a sectional view taken along the A-A section in

[0035] Figure 5 is Figure 4 an enlarged view of part B in

[0036] Figure 6 is Figure 4 an enlarged view of part C in

[0037] Figure 7 a three-dimensional view of a central air inlet and air distribution structure provided by an embodiment of the present invention;

[0038] Figure 8 a sectional view of a central air inlet and air distribution structure provided by an embodiment of the present invention;

[0039] In the figure, 1 - plasma reaction chamber, 2 - dielectric window, 3 - shielding cover, 4 - plasma coupling coil, 5 - excitation radio frequency power supply, 6 - excitation matching network, 7 - bias electrode, 8 - bias radio frequency power supply, 9 - bias matching network, 10 - vacuum pump, 11 - pressure control valve, 12 - central gas source, 13 - central nozzle, 14 - edge gas source, 15 - edge nozzle, 16 - upper cover, 17 - inner lining;

[0040] 100 - wafer, 200 - plasma;

[0041] 171 - first inner lining section, 172 - second inner lining section, 173 - guiding section;

[0042] 130 - central air inlet and air distribution structure, 131 - central air inlet disc, 132 - central air distribution disc, 132a - embedding section, 132b - extending section;

[0043] 1311 - first air inlet pipe, 1312 - first air distribution hole, 1313 - first air intake hole, 1314 - second air inlet pipe, 1315 - second air intake hole;

[0044] 1321 - first communication hole, 1322 - second communication hole, 1323 - first spray hole, 1324 - second spray hole;

[0045] 1331 - first sealing ring, 1332 - second sealing ring, 1333 - third sealing ring, 1334 - fourth sealing ring. Detailed implementation manners

[0046] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are merely used to explain the relevant invention and do not limit the invention. The described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0047] A plasma etcher, also known as a plasma planar etcher, a plasma etcher, a plasma surface treatment instrument, a plasma cleaning system, etc., is applied to the semiconductor industry. The inductively coupled plasma (ICP) etching method is the result of the combined action of chemical and physical processes. Its basic principle is that under a low vacuum pressure, the radio frequency output generated by the radio frequency power supply is output to the annular coupling coil, and a certain proportion of mixed etching gas undergoes coupled glow discharge to generate a high-density plasma. Under the action of the radio frequency (RF) of the lower bias electrode, these plasmas bombard the surface of the wafer, breaking the chemical bonds of the semiconductor in the wafer pattern area, generating volatile substances with the etching gas, detaching from the wafer in the form of gas, and being pumped away from the vacuum pipeline.

[0048] See Figure 1 , Figure 1 which shows a schematic structural diagram of a plasma etcher.

[0049] The illustrated plasma etcher includes a plasma reaction chamber 1, a shielding cover 3, a dielectric window 2, a plasma coupling coil 4, an excitation radio frequency power supply 5, an excitation matching network 6, a bias electrode 7, a bias radio frequency power supply 8, a bias matching network 9, a vacuum pump 10, a pressure control valve 11, a central gas source 12, a central nozzle 13, an edge gas source 14, and an edge nozzle 15.

[0050] The plasma reaction chamber 1, the dielectric window 2, and the shielding cover 3 are arranged in sequence from bottom to top.

[0051] The plasma coupling coil 4 is arranged on the dielectric window 2 and is located inside the shielding cover 3; after the process gases provided by the central gas source 12 and the edge gas source 14 are sprayed into the plasma reaction chamber 1 through the central nozzle 13 and the edge nozzle 15, the excitation radio frequency power supply 5 controls the plasma coupling coil 4 through the excitation matching network 6 to generate a high-density plasma 200.

[0052] The bias electrode 7 is located inside the plasma reaction chamber 1, and the bias radio frequency power supply 8 controls the bias electrode 7 through the bias matching network 9 and provides a bias voltage for the wafer 100 placed on the bias electrode 7.

[0053] The vacuum pump 10 is connected to the plasma reaction chamber 1 through a vacuum extraction pipe, and a pressure control valve 11 is arranged on the vacuum extraction pipe to switch the conduction state of the vacuum extraction pipe through the pressure control valve 11.

[0054] The central gas source is connected to the central nozzle 13 arranged in the middle of the dielectric window 2, and the edge gas source is connected to the edge nozzle 15 arranged at the edge of the plasma reaction chamber 1.

[0055] The etching process of the above plasma etching machine is specifically as follows:

[0056] The process gases provided by the central gas source 12 and the edge gas source 14 are sprayed into the plasma reaction chamber 1 through the central nozzle 13 and the edge nozzle 15; the excitation RF power supply 5 controls the operation of the plasma coupling coil 4 through the excitation matching network 6, and the process gases entering the plasma reaction chamber 1 generate plasma 200 under the coupling action of the plasma coupling coil 4. The plasma 200 is accelerated by the bias electrode 7 to bombard the wafer 100 to etch the wafer 100, and the volatile substances generated during the etching process are pumped away by the vacuum pump 10.

[0057] At present, the edge nozzle 15 of the plasma 200 etching machine is far from the wafer 100, and it is easy to only act on the edge of the wafer 100, resulting in a relatively fast edge etching rate. The jet position of the central nozzle 13 of the plasma 200 etching machine is too concentrated and sprayed towards the center of the wafer 100, which is easy to cause a relatively fast etching rate at the center of the wafer 100. Under the combined action of the two, the etching rate is prone to be slow near the half diameter of the wafer 100.

[0058] To solve the above technical problems, a central gas inlet and gas distribution structure 130 is disclosed in an embodiment of the present invention. The central gas inlet and gas distribution structure 130 is applied to a plasma etching machine, and by improving the gas inlet situation of the plasma etching machine, the uniformity of the etching rate of the plasma etching machine is improved.

[0059] See Figure 2 , Figure 2 which shows a schematic structural diagram of another plasma etching machine.

[0060] The illustrated plasma etching machine may include a plasma reaction chamber 1, a dielectric window 2, a central gas source 12, and a central gas inlet and gas distribution structure 130. Among them, the dielectric window 2 closes the upper part of the plasma reaction chamber 1, and the central gas inlet and gas distribution structure 130 is arranged at the center of the dielectric window 2 and is connected to the central gas source. The central gas source uniformly supplies gas to the plasma reaction chamber 1 through the central gas inlet and gas distribution structure 130, improving the uniformity of the plasma 200 during the etching process of the plasma etching machine.

[0061] The dielectric window 2 includes a first end face and a second end face arranged opposite to each other, where the second end face is located inside the plasma reaction chamber 1.

[0062] See Figure 3 and Figure 4 , Figure 3 shows Figure 2 a partial bottom view of the plasma etcher shown; Figure 4 is Figure 3 a cross-sectional view of the A-A section in Figure 5 is Figure 4 an enlarged view of part B in Figure 6 is Figure 4 an enlarged view of part C in

[0063] In an example of the present invention, the plasma etcher may further include an upper cover 16. Among them, the dielectric window 2 is located at the opening of the upper cover 16, and the dielectric window 2 is used to arrange the central air inlet and air distribution structure 130; the upper cover 16 is used to be installed at the opening of the plasma reaction chamber 1.

[0064] In some other examples of the present invention, the plasma etcher may further include a lining 17, and the lining 17 wraps around the opening of the upper cover 16. In the illustration, the lining 17 includes a first lining section 171 extending axially and a second lining section 172 extending radially. Among them, the first lining section 171 corresponds to the wall of the opening of the upper cover 16, and the second lining section 172 overlaps all or part of the end face of the upper cover 16 close to the plasma reaction chamber 1. By providing the lining 17, the opening of the upper cover 16 can be protected to reduce the accumulation of etching products at the upper cover 16. After a certain amount of etching products are deposited on the lining 17, the lining 17 can be directly replaced without replacing the upper cover 16, reducing the replacement cost.

[0065] In the illustration, the second lining section 172 overlaps part of the end face of the upper cover 16 close to the plasma reaction chamber 1. Further, a stepped surface may be provided on part of the end face of the upper cover 16 close to the plasma reaction chamber 1, and the second lining section 172 is installed on this stepped surface. In the illustration, the end face of the second lining section 172 close to the plasma reaction chamber 1 is flush with the remaining part of the end face of the upper cover 16 close to the plasma reaction chamber 1.

[0066] Further, a guiding section 173 is provided at the connecting part of the second lining section 172 and the first lining section 171.

[0067] In an example of the present invention, the central air inlet and air distribution structure 130 includes a central air inlet disc 131 and a central air distribution disc 132. Among them, the central air inlet disc 131 is located on the first end face of the dielectric window 2, the central air distribution disc 132 is located on the second end face of the dielectric window 2, and the central air inlet disc 131 communicates with the central gas source and the central air distribution disc 132 to inject process gas into the plasma reaction chamber 1.

[0068] In the illustration, the central air inlet disc 131 can be directly arranged on the first end face of the dielectric window 2, or in some examples of the present invention, the central air inlet disc 131 is embedded in the first end face.

[0069] In the illustration, the central air distribution disc 132 can be directly arranged on the second end face of the dielectric window 2, or in some examples of the present invention, the central air distribution disc 132 is embedded in the second end face of the dielectric window 2.

[0070] In order to improve the airtightness between any two of the central air inlet disc 131, the central air distribution disc 132 and the dielectric window 2, a seal is provided between any two of the central air inlet disc 131, the central air distribution disc 132 and the dielectric window 2.

[0071] In an example of the present invention, taking the central air inlet disc 131 being directly arranged on the first end face of the dielectric window 2 and the central air distribution disc 132 being embedded in the second end face of the dielectric window 2 as an example for introduction.

[0072] The central air inlet disc 131 is in contact with the central air distribution disc 132 to realize the air path conduction between the two.

[0073] A seal is provided between the end faces where the central air inlet disc 131 is in contact with the central air distribution disc 132. Among them, the number and type of the seal can be adjusted according to the setting of the air inlet pipeline of the central air inlet disc 131 to isolate the outside from the air inlet pipeline or isolate adjacent air inlet pipelines. In the illustration, the seal is an O-ring, and two O-rings are arranged. The two O-rings include a first O-ring 1331 and a second O-ring 1332. The first O-ring 1331 is used to isolate the air inlet pipeline from the outside, and the second O-ring 1332 is used to isolate adjacent air inlet pipelines. Further, the first O-ring 1331 and the second O-ring 1332 are concentrically arranged.

[0074] In some examples of the present invention, the first O-ring 1331 and / or the second O-ring 1332 are embedded in the end face where the central air inlet disc 131 is in contact with the central air distribution disc 132. Or in some other examples of the present invention, the first O-ring 1331 and / or the second O-ring 1332 are embedded in the end face where the central air distribution disc 132 is in contact with the central air inlet disc 131.

[0075] A seal is provided between the circumferential surface where the central air distribution disc 132 is in contact with the dielectric window 2. Among them, the number and type of the seal can be adjusted according to the setting of the air inlet pipeline of the central air distribution disc 132 to isolate the outside from the air inlet pipeline. In the illustration, the seal is an O-ring, and two O-rings are arranged. The two O-rings include a third O-ring 1333 and a fourth O-ring 1334. The third O-ring 1333 is used to isolate the air inlet pipeline from the outside, and the fourth O-ring 1334 is used to isolate the air inlet pipeline from the plasma reaction chamber 1.

[0076] In some examples of the present invention, the third sealing ring 1333 and / or the fourth sealing ring 1334 are embedded in the circumferential surface where the central air distribution plate 132 is in contact with the dielectric window 2. Or in some other examples of the present invention, the third sealing ring 1333 and / or the fourth sealing ring 1334 are embedded in the hole wall where the dielectric window 2 is in contact with the central air distribution plate 132.

[0077] The above mainly introduced the connection relationship between the central air intake and distribution structure 130 of the embodiment of the present invention and the dielectric window 2 from the direction of improving the sealing performance. The following will focus on describing the layout form of each air intake pipeline of the central air intake and distribution structure 130 with reference to the drawings.

[0078] See Figure 7 and Figure 8 , Figure 7 is a perspective view of an embodiment of the present invention provided with a central air intake and distribution structure 130; Figure 8 is a cross-sectional view of an embodiment of the present invention provided with a central air intake and distribution structure 130.

[0079] The illustrated central air intake and distribution structure 130 includes a central air intake plate 131 and a central air distribution plate 132. Among them, the central air intake plate 131 is in contact with the central air distribution plate 132 to realize the air path conduction between the two.

[0080] To facilitate the understanding of the technical solution of the examples of the present invention, the central air intake and distribution structure 130, the central air intake plate 131, and the central air distribution plate 132 all have an axial direction and a radial direction, and among them, their respective axial and radial directions are perpendicular to each other. After the central air intake plate 131 and the central air distribution plate 132 are properly fitted, the axial direction of the central air intake and distribution structure 130, the axial direction of the central air intake plate 131, and the axial direction of the central air distribution plate 132 are all parallel, and the radial direction of the central air intake and distribution structure 130, the radial direction of the central air intake plate 131, and the radial direction of the central air distribution plate 132 are all parallel.

[0081] The central air intake plate 131 has a first end face and a second end face arranged axially opposite to each other. Among them, the first end face is farther from the central air distribution plate 132 than the second end face, and the second end face is closer to the central air distribution plate 132 than the first end face; the central air intake plate 131 also has a circumferential surface, and the circumferential surface connects the first end face and the second end face.

[0082] The central air distribution plate 132 has a first end face and a second end face arranged axially opposite to each other. Among them, the first end face is closer to the central air intake plate 131 than the second end face, and the second end face is farther from the central air intake plate 131 than the first end face; the central air distribution plate 132 also has a circumferential surface, and the circumferential surface connects the first end face and the second end face.

[0083] Specifically, the central air inlet disc 131 includes a first air inlet pipe 1311, a first air distribution hole 1312, a first air inlet hole 1313, a second air inlet pipe 1314 and a second air inlet hole 1315. Among them, the first air inlet pipe 1311 is used to communicate with the central air source; the first air distribution hole 1312 connects the first air inlet pipe 1311 and the first air inlet hole 1313; the first air inlet hole 1313 is located at the edge of the central air inlet disc 131 and extends axially; the second air inlet pipe 1314 is used to communicate with the central air source and is connected to the second air inlet hole 1315; the second air inlet hole 1315 is located in the middle of the central air inlet disc 131 and is arranged to extend axially along the central air inlet disc 131.

[0084] The central air distribution disc 132 includes a first communication hole 1321, a second communication hole 1322, a first spray hole 1323 and a second spray hole 1324. Among them, the first communication hole 1321 is used to dock with the first air inlet hole 1313, the second communication hole 1322 connects the first spray hole 1323 and the first communication hole 1321, and the second communication hole 1322 extends radially along the central air distribution disc 132; the second spray hole 1324 is used to dock with the second air inlet hole 1315; when the first end face of the central air distribution disc 132 is attached to the second end face of the central air inlet disc 131, the first communication hole 1321 docks with the first air inlet hole 1313, and the second spray hole 1324 docks with and communicates with the second air inlet hole 1315.

[0085] It should be noted that the number of the above-mentioned first air distribution holes 1312 and first air inlet holes 1313 is multiple and they correspond one by one. Multiple first air distribution holes 1312 are all connected to the first air inlet pipe 1311. The first air inlet pipe 1311 in the example of the present invention can be arranged on the first end face or the circumferential surface of the central air inlet disc 131. Preferably, the first air inlet pipe 1311 is arranged at the center of the first end face of the central air inlet disc 131; the first air distribution holes 1312 extend radially from the center of the central air inlet disc 131 to the edge of the central air inlet disc 131 and are connected to the first air inlet holes 1313.

[0086] The number of the second air inlet holes 1315 is one and is isolated from the first air inlet holes 1313; the second air inlet pipe 1314 in the example of the present invention can be arranged on the first end face or the circumferential surface of the central air inlet disc 131. Preferably, the second air inlet pipe 1314 is arranged on the circumferential surface of the central air inlet disc 131 to avoid the first air inlet pipe 1311.

[0087] In some other examples of the present invention, the above-mentioned first intake pipe 1311 and the second intake pipe 1314 can also be the same intake pipe. In some other examples of the present invention, on the premise that the first intake pipe 1311 and the second intake pipe 1314 are different intake pipes, the jetting effects of the first jet hole 1323 and the second jet hole 1324 can be adjusted by independently controlling the conduction states of the first intake pipe 1311 and the second intake pipe 1314, and the amounts of process gas ejected from the second jet hole 1324 and the first jet hole 1323 can be adjusted as needed.

[0088] The number of the first communication holes 1321 and the second communication holes 1322 is multiple, and they correspond to each other one by one. The first communication holes 1321 extend along the axial direction, and the second communication holes 1322 extend along the radial direction. The first jet hole 1323 is arranged away from the second jet hole 1324 through the second communication holes 1322, so as to improve the intake condition. In some examples of the present invention, by adjusting the positions of the second communication holes 1322 and the first jet hole 1323, the first jet hole 1323 is located at a position with a stronger electric field, and the problems that the ejected process gas is directly extracted or the ionization efficiency is low are no longer likely to occur, so as to meet different process requirements.

[0089] The first jet hole 1323 can extend along the axial direction, or can extend at a certain angle with the axial direction, so that the process gas is ejected obliquely. The number of the second jet holes 1324 is one or more, and they are isolated from the first jet hole 1323. A jet chamfer can also be arranged at the jet orifice of the second jet hole 1324, so that the process gas ejected here is ejected in a dispersed state, so as to further increase the gas uniformity effect.

[0090] The above-mentioned central intake disk 131 is a cylindrical structure, and the structure can also be adjusted as needed, such as a cube structure, an elliptical cylinder structure, etc.

[0091] In a preferred example of the present invention, the central gas uniformity disk 132 is embedded in the second end face of the dielectric window 2.

[0092] In order to reduce the occupied volume of the central gas uniformity disk 132, the central gas uniformity disk 132 includes an embedded section 132a and an extension section 132b. Among them, the embedded section 132a is embedded in the installation hole of the dielectric window 2, and the extension section 132b extends radially away from the axis from the embedded section 132a.

[0093] Furthermore, the first communication holes 1321 are mainly arranged in the embedded section 132a, the second communication holes 1322 are mainly arranged in the extension section 132b, and the first jet hole 1323 is arranged in the extension section 132b.

[0094] One first air inlet hole 1313, one first communication hole 1321, one second communication hole 1322 and one first jet hole 1323 form an edge jet path, and the second air inlet hole 1315 and the second jet hole 1324 form a central jet path. In the above example of the present invention, the case including multiple edge jet paths is mainly introduced, and the multiple edge jet paths are arranged around the central jet path.

[0095] Furthermore, the distances between the multiple edge jet paths and the central jet path are the same or different respectively. The included angles between two adjacent edge jet paths among the multiple edge jet paths are the same.

[0096] As can be seen from the above description, a first sealing ring 1331 and a second sealing ring 1332 are arranged between the central air inlet disk 131 and the central air distribution disk 132. Among them, the first sealing ring 1331 is located on the outer periphery of the second sealing ring 1332. The first sealing ring 1331 is used to isolate the multiple edge jet paths from the outside, and the second sealing ring 1332 is used to isolate the central jet path from the multiple edge jet paths.

[0097] A third sealing ring 1333 and a fourth sealing ring 1334 are arranged between the central air distribution disk 132 and the dielectric window 2. The third sealing ring 1333 is arranged on the outer periphery of the embedding section 132a, and the fourth sealing ring 1334 is arranged on the circumferential surface of the extending section 132b to isolate the second communication hole 1322 from the plasma reaction chamber.

[0098] The dielectric window 2 and the central air inlet and distribution structure 130 are made of non-metallic materials such as ceramics and quartz.

[0099] Above, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features.

[0100] The above description is only for the preferred embodiments of the present invention and the explanation of the applied technical principles, and is not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. The scope of the invention involved in the present invention is not limited to the technical solutions formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above inventive concept. For example, the technical solutions formed by mutually replacing the above features with the (but not limited to) technical features with similar functions disclosed in the present invention.

Claims

1. A central air intake and air distribution structure, characterized in that, It includes a central air inlet disk and a central air distribution disk. Among them, the central air inlet disk and the central air distribution disk form a central jet passage and a plurality of edge jet passages, and the plurality of edge jet passages are arranged around the central jet passage.

2. The central air intake and air distribution structure according to claim 1, wherein, The central air inlet disk includes a first air inlet pipe, a first air distribution hole, a first air intake hole, a second air inlet pipe and a second air intake hole. Among them, the first air inlet pipe is used to communicate with a central air source; the first air distribution hole connects the first air inlet pipe and the first air intake hole; the first air intake hole is located at the edge of the central air inlet disk and extends axially; the second air inlet pipe is used to communicate with the central air source and is connected to the second air intake hole; the second air intake hole is located in the middle of the central air inlet disk and extends axially; The central air distribution disk includes a first communication hole, a second communication hole, a first jet hole and a second jet hole. Among them, the first communication hole is docked with the first air intake hole, and the second jet hole is connected to the second air intake hole; the second communication hole connects the first jet hole and the first communication hole, and the second communication hole extends radially; One first air intake hole, one first communication hole, one second communication hole and one first jet hole form one of the edge jet passages; the second air intake hole and the second jet hole form the central jet passage.

3. The central air intake and air distribution structure according to claim 2, characterized in that, The central air distribution disk includes an embedded section and an extension section. Among them, the embedded section is embedded in the installation hole of the dielectric window, and the extension section extends radially away from the axis from the embedded section.

4. The central air intake and air distribution structure according to claim 3, characterized in that, The first communication hole is arranged in the embedded section, and the second communication hole and the first jet hole are arranged in the extension section.

5. The central air intake and air distribution structure according to claim 2, characterized in that The first jet hole extends axially; or the first jet hole is arranged obliquely with respect to the axis.

6. The central air intake and air distribution structure according to claim 2, characterized in that, A jet chamfer is provided at the nozzle of the second jet hole.

7. The central air intake and air distribution structure according to claim 2, characterized in that The first air inlet pipe and the second air inlet pipe are the same air inlet pipe, or the first air inlet pipe and the second air inlet pipe are different air inlet pipes.

8. A plasma etching machine, characterized in that, It includes a plasma reaction chamber, a dielectric window, a central air source and the central air inlet and distribution structure according to any one of claims 1 to 7. Among them, the dielectric window closes the upper part of the plasma reaction chamber, and the central air inlet and distribution structure is arranged at the center of the dielectric window and is connected to the central air source.

9. The plasma etching machine according to claim 8, characterized in that, The plasma etcher further includes an upper cover. Among them, the dielectric window is located at the opening of the upper cover, and the dielectric window is used to arrange the central air inlet and distribution structure; the upper cover is used to be installed at the opening of the plasma reaction chamber.

10. The plasma etching machine according to claim 9, characterized in that, The plasma etcher further includes a lining, and the lining wraps around the opening of the upper cover.

11. The plasma etching machine according to claim 10, characterized in that, The lining includes a first lining section extending axially and a second lining section extending radially. Among them, the first lining section corresponds to the wall of the opening of the upper cover, and the second lining section overlaps all or part of the end face of the upper cover close to the plasma reaction chamber.

12. The plasma etching machine according to claim 11, wherein, A guiding section is provided at the joint where the second lining section and the first lining section are connected.

13. The plasma etching machine according to claim 11, wherein, A stepped surface is provided on a part of the end face of the upper cover close to the plasma reaction chamber, and the second lining section is installed on the stepped surface.

14. The plasma etching machine according to any one of claims 8 to 13, characterized in that, The central air inlet disk of the central air inlet and air distribution structure is directly arranged on or embedded in the end face of the dielectric window away from the plasma reaction chamber.

15. The plasma etching machine according to claim 14, characterized in that, A seal is provided between any two of the central air inlet disk, the central air distribution disk, and the dielectric window.

Images