Mounting table and substrate processing apparatus

Abstract

The invention provides a mounting table and a substrate processing apparatus. The temperature of the outermost periphery of the substrate is controlled. Provided is a mounting table having a first surface positioned on the outside of a substrate and a second surface on which the substrate is mounted, the mounting table forming a first flow path corresponding to the first surface.

Description

[0001] This application is a divisional application of an application with an application date of July 31, 2020, an application number of 202010760245.X, and an invention title of "Placement Table and Substrate Processing Apparatus". Technical Field

[0002] The present disclosure relates to a placement table and a substrate processing apparatus. Background Art

[0003] For a substrate processing apparatus, in order to adjust the temperature of a substrate placed on a placement table, a refrigerant controlled to a specified temperature is caused to flow into a flow path provided inside the placement table, thereby cooling the substrate (for example, refer to Patent Document 1).

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2006-261541

[0005] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2011-151055

[0006] Patent Document 3: Japanese Patent No. 5210706 Specification

[0007] Patent Document 4: Japanese Patent No. 5416748 Specification Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] The present disclosure provides a placement table and a substrate processing apparatus capable of controlling the temperature of the outermost periphery of a substrate.

[0010] Solutions to the Problems

[0011] According to one aspect of the present disclosure, there is provided a placement table having a first surface located outside a substrate and a second surface for placing the substrate, wherein a first flow path is formed corresponding to the first surface.

[0012] According to another aspect of the present disclosure, there is provided a placement table having a step, and having a first surface for placing a focus ring outside the step and a second surface for placing a substrate inside the step, wherein a first flow path is formed below the first surface, a second flow path is formed below the second surface, a vertical distance from the first surface to the upper surface of the first flow path is equal to a vertical distance from the first surface to the upper surface of the second flow path, and an angle formed by an extension line of the upper surface of the first flow path and a line connecting an end portion of the upper surface of the first flow path closer to the second surface and an inner end portion of the first surface is 60° or less.

[0013] According to another technical solution of the present disclosure, a substrate processing apparatus is provided. The substrate processing apparatus includes: a chamber in which plasma processing or heat treatment is performed; and a stage that places a substrate on an electrostatic chuck inside the chamber. The stage has a step, and has a first surface for placing a focus ring outside the step and a second surface for placing a substrate inside the step. A first flow path is formed below the first surface, and a second flow path is formed below the second surface. The vertical distance from the first surface to the upper surface of the first flow path is equal to the vertical distance from the first surface to the upper surface of the second flow path. The angle formed by the extension line of the upper surface of the first flow path and the line connecting the end of the upper surface of the first flow path close to the second surface and the inner end of the first surface is 60° or less.

[0014] Effect of the invention

[0015] According to one technical solution, it is possible to control the temperature of the outermost periphery of the substrate. Description of the drawings

[0016] Figure 1 It is a cross-sectional schematic view showing an example of a substrate processing apparatus according to an embodiment.

[0017] Figure 2 It is a diagram showing an example of a flow path according to an embodiment.

[0018] Figure 3 It is a diagram showing an example of the structure and configuration conditions of a flow path according to an embodiment.

[0019] Figure 4 It is a diagram showing an example of the positional relationship between the outermost periphery of a substrate and a heat source according to an embodiment.

[0020] Figure 5 It is a diagram showing an example of the experimental results of the temperature of the substrate setting area with or without a flow path according to an embodiment. Detailed implementation manners

[0021] Hereinafter, a manner for implementing the present disclosure will be described with reference to the drawings. In each drawing, there are cases where the same reference numerals are given to the same structural parts and repeated descriptions are omitted.

[0022] [Substrate processing apparatus]

[0023] Use Figure 1 A substrate processing apparatus 1 according to an embodiment will be described. Figure 1FIG. 0 is a cross-sectional schematic view showing an example of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 includes a chamber 10. The chamber 10 provides an internal space 10s therein. The chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The chamber body 12 is formed of, for example, aluminum. A corrosion-resistant film is provided on the inner wall surface of the chamber body 12. The film may be a ceramic such as alumina or yttria.

[0024] A passage 12p is formed in a side wall of the chamber body 12. The substrate W is transported between the internal space 10s and the outside of the chamber 10 through the passage 12p. The passage 12p is opened and closed by a gate valve 12g provided along the side wall of the chamber body 12.

[0025] A support portion 13 is provided on the bottom of the chamber body 12. The support portion 13 is formed of an insulating material. The support portion 13 has a substantially cylindrical shape. The support portion 13 extends upward from the bottom of the chamber body 12 within the internal space 10s. The support portion 13 has a mounting table 14 at an upper portion. The mounting table 14 is configured to support the substrate W within the internal space 10s.

[0026] The mounting table 14 has a base 18 and an electrostatic chuck 20. The mounting table 14 may further have an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a substantially disk shape. The base 18 is provided on the electrode plate 16. The base 18 is formed of a conductor such as aluminum and has a substantially disk shape. The base 18 is electrically connected to the electrode plate 16.

[0027] The electrostatic chuck 20 is placed on the mounting surface of the base 18, and the substrate W is placed on the mounting surface of the electrostatic chuck 20. Hereinafter, the mounting surface of the electrostatic chuck 20 on which the substrate W is mounted is referred to as the "second surface 20c". The main body of the electrostatic chuck 20 has a substantially disk shape and is formed of a dielectric. Electrodes 20a are embedded in the electrostatic chuck 20 in parallel with the second surface 20c. The electrodes 20a of the electrostatic chuck 20 are film-like electrodes. The electrodes 20a of the electrostatic chuck 20 are connected to a DC power supply 20p via a switch. When a voltage from the DC power supply 20p is applied to the electrodes 20a of the electrostatic chuck 20, an electrostatic attraction is generated between the electrostatic chuck 20 and the substrate W. By using this electrostatic attraction, the substrate W is held on the electrostatic chuck 20.

[0028] The electrostatic chuck 20 has a step around the substrate, and the surface outside the step becomes the mounting surface of the edge ring 25. Thus, the edge ring 25 is disposed around the substrate W. The edge ring 25 improves the in-plane uniformity of the plasma treatment performed on the substrate W. The edge ring 25 may be formed of silicon, silicon carbide, quartz, or the like. The edge ring 25 is an example of a ring member located around the substrate and is also referred to as a focusing ring. Hereinafter, the mounting surface of the electrostatic chuck 20 on which the edge ring 25 is disposed is referred to as the "first surface 20d" located outside the substrate.

[0029] The mounting stage 14 according to this embodiment has an electrostatic chuck 20, but is not limited thereto. For example, the mounting stage 14 may not have an electrostatic chuck 20. In this case, the substrate W is placed on the mounting surface of the base 18, the mounting surface of the base 18 constitutes the second surface 20c for mounting the substrate, and the mounting surface of the base 18 that is more peripheral than the substrate constitutes the first surface 20d located outside the substrate.

[0030] As described above, an edge ring 25 surrounding the substrate W is provided on the first surface 20d, and the first surface 20d is the outer upper surface of the electrostatic chuck 20 that adsorbs the edge ring 25. In addition, the substrate W is placed on the second surface 20c, and the second surface 20c is the inner upper surface of the electrostatic chuck 20 that adsorbs the substrate W.

[0031] Hereinafter, as an example of the heat exchange medium, a refrigerant will be described, but the heat exchange medium is not limited thereto and may also be a temperature adjustment medium. A first flow path 19b for the refrigerant to flow through is formed in the outer periphery of the base 18 below the first surface 20d. The refrigerant is supplied from a cooling unit 22 provided outside the chamber 10 to the first flow path 19b via a pipe 23a. The refrigerant flows in the pipe 23a, is supplied from the supply port of the refrigerant to the first flow path 19b, circulates to the discharge port, and returns to the cooling unit 22 via a pipe 23b.

[0032] In addition, a second flow path 19a is formed in the center of the base 18 below the second surface 20c, and the refrigerant flows through the second flow path 19a inside. The refrigerant is supplied from the cooling unit 22 to the second flow path 19a via a pipe 22a. The refrigerant flows in the pipe 22a, is supplied from the supply port of the refrigerant to the second flow path 19a, circulates to the discharge port, and returns to the cooling unit 22 via a pipe 22b.

[0033] The electrostatic chuck 20 has a first heater 20e. The first heater 20e is buried under the first surface 20d and is near the step of the electrostatic chuck 20. One first heater 20e is provided between the first surface 20d and the first flow path 19b. The first heater 20e is connected to a power supply 52, and when a voltage from the power supply 52 is applied to the first heater 20e, the first heater 20e is heated. The first heater 20e is used to control the temperature of the edge ring 25. In addition, the first heater 20e is used to control the temperature of a local area at the outermost periphery of the substrate (for example, about 2 to 3 mm from the end of the substrate).

[0034] In addition, the electrostatic chuck 20 has a second heater 20b for controlling the temperature of the substrate W. The second heater 20b is buried in parallel with the electrode 20a in the electrostatic chuck 20. The second heater 20b is connected to a power supply 51, and when a voltage from the power supply 51 is applied to the second heater 20b, the second heater 20b is heated. The second heater 20b is used to control the temperature of the substrate W.

[0035] That is, for the substrate processing apparatus 1 having this structure, the temperature of the substrate W placed on the electrostatic chuck 20 is adjusted by heat exchange between each refrigerant and the base 18 and between each heater and the base 18. In addition, the first flow path 19b is an example of a flow path in which a heat exchange medium flows inside corresponding to the first surface 20d. The second flow path 19a is an example of a flow path in which a heat exchange medium flows inside corresponding to the second surface 20c. If the first flow path 19b is formed in the mounting table 14, the second flow path 19a may not exist.

[0036] In the present embodiment, the first flow path 19b and the second flow path 19a are connected in parallel to a cooling unit 22 capable of flowing a refrigerant into the first flow path 19b and the second flow path 19a. However, it is not limited thereto, and the first flow path 19b and the second flow path 19a may also be connected in series to a cooling unit 22 capable of flowing a refrigerant into the first flow path 19b and the second flow path 19a. As shown in the present embodiment, two cooling units 22 may be arranged, and independent system refrigerants may be circulated in the first flow path 19b and the second flow path 19a, or one cooling unit 22 may be arranged, and the refrigerant may be circulated in common in the first flow path 19b and the second flow path 19a.

[0037] A gas supply line 24 is provided in the substrate processing apparatus 1. The gas supply line 24 supplies a heat transfer gas (e.g., He gas) from a heat transfer gas supply mechanism between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W.

[0038] The substrate processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the mounting table 14. The upper electrode 30 is supported by a member 32 at the upper part of the chamber body 12. The member 32 is formed of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12.

[0039] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is the lower surface on the side of the internal space 10s and divides the internal space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates less Joule heat. The top plate 34 has a plurality of gas ejection holes 34a penetrating the top plate 34 in the thickness direction thereof.

[0040] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support body 36. The support body 36 has a plurality of air holes 36b extending downward from the gas diffusion chamber 36a. The plurality of air holes 36b communicate with the plurality of gas ejection holes 34a respectively. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0041] A valve group 42, a flow controller group 44, and a gas source group 40 are connected to the gas supply pipe 38. The gas source group 40, the valve group 42, and the flow controller group 44 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of on-off valves. The flow controller group 44 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 44 are all mass flow controllers or pressure-controlled flow controllers. The plurality of gas sources of the gas source group 40 are respectively connected to the gas supply pipe 38 via the corresponding on-off valves of the valve group 42 and the corresponding flow controllers of the flow controller group 44.

[0042] For the substrate processing apparatus 1, a shield 46 is provided in a detachable manner along the inner wall surface of the chamber main body 12 and the outer periphery of the support portion 13. The shield 46 prevents reaction by-products from adhering to the chamber main body 12. The shield 46 is constituted, for example, by forming a corrosion-resistant film on the surface of a base material formed of aluminum. The corrosion-resistant film can be formed of a ceramic such as yttrium oxide.

[0043] A baffle 48 is provided between the support portion 13 and the side wall of the chamber main body 12. The baffle 48 is constituted, for example, by forming a corrosion-resistant film (such as a film of yttrium oxide) on the surface of a base material formed of aluminum. A plurality of through holes are formed in the baffle 48. An exhaust port 12e is provided at the bottom of the chamber main body 12 below the baffle 48. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 53. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbo molecular pump.

[0044] The substrate processing apparatus 1 includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply for generating first high-frequency power. The first high-frequency power has a frequency suitable for generating plasma. The frequency of the first high-frequency power is, for example, a frequency in the range of 27 MHz to 100 MHz. The first high-frequency power supply 62 is connected to the base 18 via a matcher 66 and an electrode plate 16. The matcher 66 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the impedance on the load side (the base 18 side). In addition, the first high-frequency power supply 62 may also be connected to the upper electrode 30 via the matcher 66. The first high-frequency power supply 62 constitutes a plasma generation unit in an example.

[0045] The second high-frequency power supply 64 is a power supply that generates second high-frequency power. The second high-frequency power has a frequency lower than that of the first high-frequency power. When the second high-frequency power is used together with the first high-frequency power, the second high-frequency power is used as high-frequency power for bias voltage for attracting ions to the substrate W. The frequency of the second high-frequency power is, for example, a frequency in the range of 400 kHz to 13.56 MHz. The second high-frequency power supply 64 is connected to the base 18 via a matcher 68 and an electrode plate 16. The matcher 68 has a circuit for matching the output impedance of the second high-frequency power supply 64 with the impedance on the load side (the base 18 side).

[0046] In addition, the first high-frequency power may not be used and only the second high-frequency power may be used, that is, a single high-frequency power is used to generate plasma. In this case, the frequency of the second high-frequency power may also be a frequency greater than 13.56 MHz, for example, 40 MHz. The substrate processing apparatus 1 may not include the first high-frequency power supply 62 and the matcher 66. The second high-frequency power supply 64 constitutes the plasma generation unit in one example.

[0047] For the substrate processing apparatus 1, gas is supplied from the gas supply unit into the internal space 10s to generate plasma. In addition, by supplying the first high-frequency power and / or the second high-frequency power, a high-frequency electric field is generated between the upper electrode 30 and the base 18. The generated high-frequency electric field generates plasma.

[0048] The substrate processing apparatus 1 may further include a control unit 80. The control unit 80 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, an input / output interface for signals, etc. The control unit 80 controls each part of the substrate processing apparatus 1. For the control unit 80, an input operation of an instruction can be performed using the input device so that an operator can manage the substrate processing apparatus 1. In addition, for the control unit 80, the operating state of the substrate processing apparatus 1 can be visually displayed using the display device. Moreover, a control program and process data are stored in the storage unit. By executing the control program using the processor, various processes are executed using the substrate processing apparatus 1. The processor executes the control program and controls each part of the substrate processing apparatus 1 based on the process data.

[0049] [Flow path]

[0050] By flowing a refrigerant cooled to a specified temperature through a second flow path 19a provided inside the base 18, the substrate W is cooled, but it is difficult to control the temperature of a local area at the outermost periphery of the substrate, such as a few millimeters from the end of the substrate with a diameter of 300 mm or more.

[0051] Thus, for the stage 14 according to this embodiment, a first flow path 19b is provided at a position outside the diameter of the substrate, and the first flow path 19b is arranged at a position where the influence of the temperature control by the refrigerant flowing through the second flow path 19a is small, so as to locally control the temperature of the outermost periphery of the substrate. In addition, in this embodiment, the cross-sectional area of the first flow path 19b is made relatively smaller than that of the second flow path 19a to increase the flow velocity. Thereby, the temperature of the outermost periphery of the substrate can be further locally controlled.

[0052] Figure 2 FIG. is an example of a flow path according to an embodiment. Figure 2 FIG. (a) shows a cross-sectional view of the base 18. As Figure 2 shown in FIG. (a), it is formed in a spiral shape within the base 18. However, the shape of the second flow path 19a is not limited to this, and it may also be a ring shape or the like, or other shapes. The first flow path 19b is formed in a substantially ring shape around the second flow path 19a. However, the shape of the first flow path 19b is not limited to this, and it may also be formed in a ring shape with two or more turns or a spiral shape, or other shapes.

[0053] Figure 2 FIG. (b) shows Figure 2 the A - A cross-section of FIG. (a). With respect to the end of the substrate W or the step of the electrostatic chuck 20, the outer peripheral side is set as the first region (outer peripheral region), and the inner peripheral side is set as the second region (substrate setting region). In this embodiment, in order to control the temperature of the outermost periphery of the substrate with a portion about 2 - 3 mm away from the end of the substrate W as the target, the first flow path 19b formed in the first region of the base 18 is provided as a necessary structure. The second flow path 19a formed within the base 18 in the second region may not be provided.

[0054] In addition, a first heater 20e is provided in the first region, and the first heater 20e is mainly used to control the temperature of the edge ring 25 placed on the first surface 20d. In this embodiment, the first heater 20e is provided within the electrostatic chuck 20, but it is not limited to this, and it may also be provided in the base 18. The second heater 20b provided within the electrostatic chuck 20 in the first region may not be provided.

[0055] The cross-sectional area S of the first flow path 19b is smaller than the cross-sectional area S' of the second flow path 19a. Thereby, the flow velocity of the refrigerant flowing through the first flow path 19b can be made higher than that of the refrigerant flowing through the second flow path 19a, so as to improve the heat dissipation effect in the first region.

[0056] Moreover, by combining the first flow path 19b and the first heater 20e, the temperature within a range of about several millimeters from the outermost periphery of the substrate, that is, the end of the substrate, can be controlled with higher precision.

[0057] [Configuration conditions]

[0058] (Condition 1)

[0059] The first flow path 19b controls the temperature of the edge ring 25 placed on the first surface 20d. In addition, the first flow path 19b controls the temperature of the outermost periphery of the substrate. Refer to Figure 3 to describe the configuration conditions of the first flow path 19b. Figure 3 It is a diagram showing an example of the structure and configuration conditions of the first flow path 19b and the second flow path 19a according to an embodiment. Let the vertical distance from the first surface 20d to the first flow path 19b be h, and the horizontal distance from the boundary surface between the first surface 20d and the second surface 20c to the first flow path 19b be d. At this time, the first flow path 19b is provided in a region satisfying the condition 1 of d>h. Condition 1 can also be replaced by tan －1 (h / d) < 45°.

[0060] In the present embodiment, Figure 3 temperature control of the temperature control target region Tg of the outermost periphery of the substrate shown is performed. The temperature control target region Tg is a region about 2 mm to 5 mm from the end of the upper surface of the electrostatic chuck 20, that is, the second surface 20c. Structurally, the corner portion formed by the end of the second surface 20c and the boundary surface between the first surface 20d and the second surface 20c is likely to adhere to the reaction products generated during substrate processing and is likely to be heated by the plasma input heat. Therefore, the temperature control of the temperature control target region Tg is important. In addition, by improving the temperature controllability of the outermost periphery region of the substrate, the yield is improved, and the productivity can be improved. For the above reasons, in the present embodiment, the temperature of the temperature control target region Tg is controlled by configuring the structure of the first flow path 19b in the first region so as to satisfy the above condition 1 and the following conditions.

[0061] In addition, in the present embodiment, the upper surface (the first surface 20d and the second surface 20c) of the mounting table 14 has a step, but it may not have a step. In the case of not having a step, position C overlaps with position B. In addition, the heat transfer from the first flow path 19b is transmitted from position C to position B.

[0062] Therefore, in either the case where the upper surface of the mounting table 14 has a step or the case where the upper surface of the mounting table 14 does not have a step, local temperature control of the temperature control target region Tg can be performed by controlling the temperature of position C, which is the shortest distance for heat to move from the first flow path 19b.

[0063] (Condition 2)

[0064] In addition, let the width in the horizontal direction of the second flow path 19a formed in the base 18 in the second region be w1, and let the width in the horizontal direction of the first flow path 19b formed in the base 18 in the first region be w2. In this case, it is preferably w1 > w2. When the flow rate of the refrigerant flowing through the first flow path 19b and the flow rate of the refrigerant flowing through the second flow path 19a are constant and the length in the height direction of the first flow path 19b is less than or equal to the length in the height direction of the second flow path 19a, the narrower the width of the first flow path 19b, the faster the flow velocity. As a result, the flow velocity of the refrigerant flowing through the first flow path 19b can be made higher than the flow velocity of the refrigerant flowing through the second flow path 19a. Thereby, the heat dissipation control in the first region is improved, and the temperature control of the outermost periphery of the substrate can be performed with higher precision.

[0065] (Condition 3)

[0066] In addition, when the horizontal distance from the first flow path 19b to the second flow path 19a is set to d', it is preferably d' > d. Thereby, the heat dissipation control in the first region can be further improved, and the temperature controllability of the outermost periphery of the substrate can be further improved.

[0067] (Condition 4)

[0068] In addition, refer to the conditions for the angle θ when the first flow path 19b is set as the heat source as described in FIG. 4. Figure 4 is a diagram showing an example of the positional relationship between the outermost periphery of the substrate and the heat source in the periphery of the substrate end portion according to an embodiment. As the heat source, the first flow path 19b is cited as an example for explanation, but the heat source may also be the first heater 20e provided in the first region. In addition, in Figure 4 , for convenience of explanation, the first flow path 19b that becomes the heat source is represented by a dot.

[0069] As Figure 3 shown, the angle θ is the angle formed by the extension line of the upper surface of the first flow path 19b and the line connecting the inner end of the upper surface (the side closer to the temperature control target region Tg) and the position C. As Figure 4 (a) of FIG. shows, when the angle θ is 90°, ΔT, that is, the temperature influence range of the mounting table 14 indicated by "←" is the largest in Figure 4 (a) to Figure 4 (d) of FIG. As Figure 4 (b) to Figure 4 (d) of FIG. shows, the smaller the angle θ, such as 60°, 45°, 30°, the shorter the ΔT, that is, the length of "←", and the smaller the temperature influence range of the mounting table 14.

[0070] That is to say, the smaller the angle θ is, the smaller the temperature influence range of the stage 14 is. Therefore, local temperature control can be performed, which is preferable. However, when the angle θ is 60° or less, the relative effect of the temperature influence range with respect to the angle θ is small. For example, when the angle θ is 60° or less, it is considered that the temperature control target region Tg can be locally controlled.

[0071] [Experiment]

[0072] Next, refer to Figure 5 to describe the results of measuring the temperature of the substrate setting area in the case where the first flow path 19b is present and in the case where the first flow path 19b is not present. Figure 5 is a diagram showing an example of the experimental results of the presence or absence of the first flow path 19b according to an embodiment and the temperature of the substrate setting area. The temperature of the substrate setting area refers to the temperature of the back surface of the substrate when the substrate is placed on the second surface 20c or the temperature of the second surface 20c on which the substrate is placed.

[0073] Figure 5 In (1), it represents the case where the first flow path 19b is present and the first flow path 19b is thin. The case where the first flow path 19b is thin means Figure 3 the case where the relationship between the width w1 in the horizontal direction of the second flow path 19a and the width w2 in the horizontal direction of the first flow path 19b shown in

[0074] Figure 5 satisfies the condition of w1 > w2. Figure 5 In (2), the first flow path 19b is not present.

[0075] In addition, in any of the cases (1) to (3), the second flow path 19a and the second heater 20b are provided in the second region.

[0076] Figure 5 The horizontal axis of Figure 5 represents the position in the diameter direction of the substrate, and the vertical axis represents the temperature of the substrate setting area.

[0077] According to Figure 5As a result, in the first region, when the first flow path 19b of (1) is thinner, compared with the case of (2) without the first flow path 19b and the case of (3) with a thicker first flow path 19b, the cooling effect of the refrigerant is higher and the temperature of the outermost periphery of the substrate decreases. That is to say, compared with the cases of (2) and (3), the case of the thinner first flow path 19b of (1) can improve the temperature controllability of the outermost periphery of the substrate.

[0078] As a result, in the cases of (1) and (3) having the first flow path 19b, the temperature difference ΔT in the set region of the substrate is larger than that in the case of (2) without the first flow path 19b. As a result, the temperature of the outermost periphery of the substrate (about 2 to 3 mm from the end of the substrate) can be locally reduced. Moreover, in the case of (1) where the first flow path 19b is thinner, compared with the case of (3) where the first flow path 19b is thicker than that of (1), the temperature of the outermost periphery of the substrate can be further reduced.

[0079] As described above, according to the mounting table 14 and the substrate processing apparatus 1 according to the present embodiment, the temperature of the outermost periphery of the substrate can be controlled.

[0080] In addition, in the present embodiment, as the structure for controlling the temperature of the outermost periphery of the substrate, the first flow path 19b is mainly described as a heat source, but it is not limited thereto. For example, as the structure for controlling the temperature of the outermost periphery of the substrate, the first heater 20e may also be used, or the first flow path 19b and the first heater 20e may be used in combination. In addition, as the heat source, in addition to the first flow path 19b and the first heater 20e, a heating element or a piezoelectric element may also be used.

[0081] In addition, an example in which one first heater 20e is provided between the first surface 20d and the first flow path 19b is described, but it is not limited thereto, and a plurality of first heaters 20e may be provided. In the case of providing a plurality of first heaters 20e, it is preferable that at least one of the plurality of first heaters 20e is provided between the first surface 20d and the first flow path 19b.

[0082] It should be considered that the mounting table and the substrate processing apparatus according to one embodiment disclosed herein are illustrative in all aspects and not restrictive. The above embodiments can be deformed and improved in various forms as long as they do not deviate from the claims and their gist. The matters described in the above plurality of embodiments can also adopt other structures within a non - contradictory range. In addition, combinations can be made within a non - contradictory range.

[0083] The substrate processing apparatus of the present disclosure can also be applied to any type of apparatus such as an Atomic Layer Deposition (ALD) apparatus, a Capacitively Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), a Radial Line Slot Antenna (RLSA), an Electron Cyclotron Resonance Plasma (ECR), and a Helicon Wave Plasma (HWP).

[0084] In addition, as an example of the substrate processing apparatus 1, a plasma processing apparatus has been described, but the substrate processing apparatus is not limited to the plasma processing apparatus. For example, the substrate processing apparatus 1 may also be a heat treatment apparatus that does not generate plasma but performs heat treatment on the substrate W using a heating mechanism such as a heater, a thermal ALD apparatus, a thermal Chemical Vapor Deposition (CVD) apparatus, etc. In addition, the substrate processing apparatus 1 may also be an etching apparatus or a film forming apparatus.

Claims

1. A stage having a step, and having a first surface for placing a focus ring outside the step and a second surface for placing a substrate inside the step, wherein, a first flow path is formed below the first surface, a second flow path is formed below the second surface, the vertical distance from the first surface to the upper surface of the first flow path is equal to the vertical distance from the first surface to the upper surface of the second flow path, the angle formed by the extension line of the upper surface of the first flow path and the line connecting the end of the upper surface of the first flow path near the second surface and the inner end of the first surface is 60° or less.

2. The stage according to claim 1, wherein, the angle is 45° or less.

3. The stage according to claim 1 or 2, wherein, the width of the second flow path in the horizontal direction is set as w1, and the width of the first flow path in the horizontal direction is set as w2. At this time, w1 > w2, the flow rate of the refrigerant in the first flow path is faster than the flow rate of the refrigerant in the second flow path.

4. The stage according to claim 3, wherein, the horizontal distance from the boundary surface between the first surface and the second surface to the first flow path is set as d, and the horizontal distance from the first flow path to the second flow path is set as d'. At this time, d' > d.

5. The stage according to claim 3 or 4, wherein, the first flow path and the second flow path are connected in parallel to a cooling unit capable of flowing a heat exchange medium into the first flow path and the second flow path.

6. The stage according to claim 3 or 4, wherein, the first flow path and the second flow path are connected in series to a cooling unit capable of flowing a heat exchange medium into the first flow path and the second flow path.

7. The stage according to any one of claims 1 to 6, wherein, a ring member is provided on the first surface, and the ring member is located around the substrate.

8. The stage according to claim 7, wherein, the first surface is the outer upper surface of the electrostatic chuck that adsorbs the ring member.

9. The stage according to claim 8, wherein, the second surface is the inner upper surface of the electrostatic chuck that adsorbs the substrate.

10. The stage according to claim 8 or 9, wherein, the electrostatic chuck has a first heater between the first surface and the first flow path, and the first heater controls the temperature of the ring member.

11. The stage according to any one of claims 8 to 10, wherein, the electrostatic chuck has a second heater parallel to the second surface, and the second heater controls the temperature of the substrate.

12. The stage according to any one of claims 1 to 10, wherein, the first flow path is formed at a position outside the end of the substrate.

13. A substrate processing apparatus having: a chamber in which plasma processing or heat treatment is performed; and a stage that places a substrate on an electrostatic chuck inside the chamber, wherein, The placement table has a step, and has a first surface for placing a focusing ring outside the step and a second surface for placing a substrate inside the step. A first flow path is formed below the first surface. A second flow path is formed below the second surface. The vertical distance from the first surface to the upper surface of the first flow path is equal to the vertical distance from the first surface to the upper surface of the second flow path. The angle formed by the extension line of the upper surface of the first flow path and the line connecting the end of the upper surface of the first flow path near the second surface and the inner end of the first surface is 60° or less.

14. The substrate processing apparatus according to claim 13, wherein the angle is 45° or less.

15. The substrate processing apparatus according to claim 13 or 14, wherein the substrate processing apparatus has a cooling unit capable of flowing a heat exchange medium into the first flow path and the second flow path.

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