X-ray detection element and manufacturing method thereof

Abstract

The invention discloses an X-ray detection element and a manufacturing method thereof. The X-ray detection element comprises a thin film transistor layer, a photoelectric semiconductor layer, a lateral electrode column, a scintillator and a grid structure. The photoelectric semiconductor layer is arranged on the thin film transistor layer and comprises a first electrode layer, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, the third semiconductor layer comprises a first surface and a second surface opposite to the first surface, and the first electrode layer is coupled to the thin film transistor layer. The lateral electrode column comprises a conductive column and a second electrode layer, the conductive column is formed on the first surface, the second electrode layer is formed on the conductive column, and the second electrode layer is coupled to the thin film transistor layer. The scintillator is arranged on the second surface. The grid structure is arranged on the thin film transistor layer and surrounds the photoelectric semiconductor layer, the lateral electrode columns and at least part of the scintillator.

Description

Technical Field

[0001] The present invention relates to an X-ray detection element and a manufacturing method thereof, and particularly to an X-ray detection element capable of avoiding damage to a photodiode and a manufacturing method thereof. Background Art

[0002] With the development of technology, various non-visible light related technologies are widely applied in daily life. X-ray imaging is an important tool for medical imaging diagnosis, and currently digital X-ray imaging is gradually replacing traditional X-ray photographic films. With the demand for medical image resolution, the prior art focuses on two parts for improving the image resolution of X-ray detection elements: a scintillator, and a thin film transistor (TFT) sensor array. Among them, the scintillator has better image resolution in a pixel structure, and the thin film transistor sensor array includes a photodiode.

[0003] However, the prior art uses a thick film process and uses a photoresist to fabricate a scintillator pixel structure on a thin film transistor sensor array. Such a method is prone to damage the photodiode during illumination due to the need for a long exposure time. Therefore, it is still necessary to provide an X-ray detection element to solve the problems of the prior art. Summary of the Invention

[0004] To solve the above problems, an object of the present invention is to provide an X-ray detection element and a manufacturing method thereof.

[0005] To achieve the above object, the present invention adopts the following technical solutions: An X-ray detection element includes a thin film transistor layer, a photoelectric semiconductor layer, a lateral electrode column, a scintillator, and a grid structure. The photoelectric semiconductor layer is disposed on the thin film transistor layer. The photoelectric semiconductor layer includes a first electrode layer, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer stacked in sequence. The third semiconductor layer includes a first surface and a second surface opposite to the first surface. The first electrode layer has a first coupling surface, and the first electrode layer is coupled to the thin film transistor layer via the first coupling surface. The lateral electrode column includes a conductive column and a second electrode layer. The conductive column is formed on the first surface, and the second electrode layer is formed on the conductive column. The second electrode layer has a second coupling surface, and the second electrode layer is coupled to the thin film transistor layer via the second coupling surface, wherein the first coupling surface and the second coupling surface are coplanar. The scintillator is disposed on the second surface. The grid structure is disposed on the thin film transistor layer, and the grid structure surrounds the photoelectric semiconductor layer, the lateral electrode column, and at least a part of the scintillator.

[0006] A manufacturing method of an X-ray detection element includes the following steps: providing a semiconductor substrate; doping the semiconductor substrate to form a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer stacked in sequence, wherein the third semiconductor layer includes a first surface and a second surface opposite to the first surface; etching the first semiconductor layer and the second semiconductor layer to expose at least part of the first surface; forming a conductive column on the first surface; depositing a first electrode layer on the first semiconductor layer to form a photo-semiconductor layer, and depositing a second electrode layer on the conductive column to form a lateral electrode column, wherein the first electrode layer has a first coupling surface, the second electrode layer has a second coupling layer, and the first coupling surface and the second coupling surface are coplanar; providing a thin film transistor layer; forming a grid structure on the thin film transistor layer; coupling the first electrode layer and the second electrode layer to the thin film transistor layer within the grid structure; and forming a scintillator on the second surface, wherein the grid structure surrounds the photo-semiconductor layer, the lateral electrode column, and at least part of the scintillator.

[0007] For the X-ray detection element according to the present invention, since the grid structure is directly disposed on the thin film transistor layer, and the grid structure at least partially surrounds the photo-semiconductor layer, the lateral electrode column, and the scintillator, when manufacturing the X-ray detection element, it is possible to avoid the photo-energy from damaging the photo-semiconductor structure of the thin film transistor layer due to excessive light irradiation time. Description of the Drawings

[0008] Figure 1A is a schematic structural diagram of an X-ray detection element according to an embodiment of the present invention.

[0009] Figure 1B is an example diagram of the grid structure.

[0010] Figure 2 is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention.

[0011] Figure 3 is according to Figure 1A a flowchart of the manufacturing method of the X-ray detection element according to the embodiment.

[0012] Figures 4A to 4I is according to Figure 3 a schematic diagram of the manufacturing method of the X-ray detection element according to the embodiment.

[0013] Figure 5 is according to Figure 2 a flowchart of the manufacturing method of the X-ray detection element according to the embodiment.

[0014] Figure 6 is according to Figure 5 a schematic diagram of the manufacturing method of the X-ray detection element according to the embodiment.

[0015] Figure 7It is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention.

[0016] Figure 8 It is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention.

[0017] Figure 9 It is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention.

[0018] Figure 10 is according to Figure 9 Flowchart of the manufacturing method of the X-ray detection element of the embodiment.

[0019] Among them, reference numerals:

[0020] 10, 10A, 10B, 10C, 10D X-ray detection element 20 thin film transistor layer 30 optoelectronic semiconductor layer

[0021] 31 first semiconductor layer 32 second semiconductor layer 33 third semiconductor layer

[0022] 34 first electrode layer 35 semiconductor substrate 40 lateral electrode post

[0023] 41 conductive post 42 second electrode layer 50 grid structure

[0024] 60, 60A scintillator 70 passivation layer 80 reflective layer

[0025] 90 encapsulation layer 331 first surface 332 second surface

[0026] 341 first coupling surface 411 first end 412 second end 421 second coupling surface S101~S109, S201, S301 steps Detailed implementation manners

[0027] Various embodiments will be described below, and those skilled in the art should be able to easily understand the spirit and principles of the present invention with reference to the description in conjunction with the drawings. However, although some specific embodiments will be specifically described in the text, these embodiments are only illustrative and are not considered restrictive or exhaustive in all aspects. Therefore, for those skilled in the art, various changes and modifications to the present invention should be obvious and easily achievable without departing from the spirit and principles of the present invention.

[0028] In each embodiment of the present invention, "upper", "lower", "left", "right", "front" or "rear" are used herein to describe the relationship between one element and another element, and are only used to illustrate the orientation presented in the drawings, and do not limit their actual positions. The orientation or orientation of the elements in the drawings is not limited by the flipping of the device.

[0029] Figure 1A It is a schematic structural diagram of an X-ray detection element according to an embodiment of the present invention. Please refer to Figure 1A , the X-ray detection element 10 includes a thin film transistor layer 20, a photoelectric semiconductor layer 30, a lateral electrode column 40, a scintillator 60, and a grid structure 50. The thin film transistor layer 20 is, for example, a thin film transistor array substrate (TFT array) disposed on a glass substrate, and its material is, for example, indium gallium zinc oxide (IGZO), low temperature poly-silicon (LTPS), or other similar materials. The user can control the opening and closing of the overall light reception of the X-ray detection element 10 through the thin film transistor layer 20. The photoelectric semiconductor layer 30 is disposed on the thin film transistor layer 20. The scintillator 60 can convert the received X-ray into visible light. The photoelectric semiconductor layer 30 is used to receive the visible light converted by the scintillator 60 and convert it into an electron-hole pair to generate a signal, and the thin film transistor layer 20 can control the reading out of the signal generated by the electron-hole pair. According to the above configuration, the X-ray detection element 10 can receive X-rays. In addition, in this embodiment, one X-ray detection element 10 is used as one pixel, however, in other preferred embodiments, multiple X-ray detection elements 10 can also be used as one pixel, and the present invention is not limited thereto.

[0030] Please continue to refer to Figure 1APreferably, the material of the optoelectronic semiconductor layer 30 is selected from the group consisting of silicon, gallium arsenide (GaAs), and indium phosphide (InP), and is formed by, for example, epitaxy. The optoelectronic semiconductor layer 30 includes a first electrode layer 34, a first semiconductor layer 31, a second semiconductor layer 32, and a third semiconductor layer 33 stacked in sequence. In this embodiment, the first semiconductor layer 31, the second semiconductor layer 32, and the third semiconductor layer are formed by, for example, doping processes. The first semiconductor layer 31 is doped with atoms such as phosphorus or antimony to form an N-type semiconductor structure (i.e., an electron-rich structure). The third semiconductor layer 33 is doped with atoms such as boron or indium to form a P-type semiconductor structure (i.e., a hole-rich structure). The second semiconductor layer 32 is an intrinsic semiconductor layer with high purity and low doping. Such a PIN-type photodiode has a wider depletion layer, a larger junction resistance, and a smaller junction capacitance than a general photodiode. The third semiconductor layer 33 includes a first surface 331 and a second surface 332 opposite to the first surface 331. The first surface 331 is adjacent to the second semiconductor layer 32, and the following conductive column 41 (bump) can be disposed on the first surface 331. The scintillator 60 is disposed on the second surface 332. In addition, the first electrode layer 34 can be made of a metal material, such as copper, or a multilayer structure such as molybdenum-aluminum-molybdenum (Mo-Al-Mo) or titanium-aluminum-titanium (Ti-Al-Ti). The first electrode layer 34 is used as one of the electrodes of the optoelectronic semiconductor layer 30 and is coupled to the thin-film transistor layer 20.

[0031] Please continue to refer to Figure 1A For example, the first semiconductor layer 31 exposes the first surface 331 by appropriate means such as etching the optoelectronic semiconductor layer 30, and then the conductive column 41 is fabricated on the first surface 331 by lateral growth (such as deposition). The conductive column 41 is made of a conductive material such as copper or tin, for example. The conductive column 41 has opposite first end 411 and second end 412. The first end 411 is coupled to the third semiconductor layer 33, and a second electrode layer 42 is formed on the second end 412. The second electrode layer 42 can also be made of a metal material, and its composition is similar to that of the first electrode layer 34. The second electrode layer 42 is used as the other electrode of the optoelectronic semiconductor layer 30 and is coupled to the thin-film transistor layer 20. In this embodiment, the first electrode layer 34 is used to couple to the first coupling surface 341 of the thin-film transistor layer 20, and the first electrode layer 34 is coupled to the thin-film transistor layer 20 via the first coupling surface 341. The second electrode layer 42 is used to couple to the second coupling surface 421 of the thin-film transistor layer 20, and the second electrode layer 42 is coupled to the thin-film transistor layer 20 via the second coupling surface 421. The first coupling surface 341 and the second coupling surface 421 are coplanar, and are coplanar with the coupling surface of the thin-film transistor layer 20, for example, to improve the process yield of coupling the first electrode layer 34 and the second electrode layer 42 on the optoelectronic semiconductor layer 30 to the thin-film transistor layer 20 during the manufacturing process of the X-ray detection element 10.

[0032] Please continue to refer to Figure 1A . The scintillator 60 is used to receive X-rays and is excited by the X-rays to generate visible light. The scintillator 60 needs to match the visible light wavelength that can be absorbed by the optoelectronic semiconductor layer 30. In this embodiment, the material of the scintillator 60 is selected from the group consisting of NaI(Tl), CsI(Tl), BGO, LSO:Ce, GSO:Ce, YSO:Ce, YAP:Ce, Gd2O2S:Tb (also known as GOS:Tb), and Y2O2S:Tb. Preferably, it is selected from the group consisting of CsI(TI) and Gd2O2S:Tb, and can convert light with a wavelength of about 490nm to 570nm. The light within this wavelength range is, for example, green light. In this embodiment, the scintillator 60 is, for example, CsI(Tl). CsI(Tl) presents a columnar structure, and the converted X-ray image has high resolution and high quality, and can reduce the X-ray dose.

[0033] In addition, the X-ray detection element 10 of this embodiment further includes a grid structure 50. The grid structure 50 is grid-shaped, and an example diagram of its form can be referred to Figure 1B . The grid structure 50 is disposed on the thin film transistor layer 20 and surrounds the optoelectronic semiconductor layer 30, the lateral electrode posts 40, and at least part of the scintillator 60, so that the scintillator 60 does not contact the scintillator 60 of another adjacent X-ray detection element, thereby generating a light condensing effect when the X-rays irradiate the scintillator 60. In this embodiment, the material of the grid structure 50 is selected from the group consisting of SU-8 photoresist and polymethyl methacrylate. The SU-8 photoresist is a photoresist composed of a polymer (biphenol A novolac epoxy resin, Biphenol-ANovolac Epoxy Resin), a solvent (GBL, γ-butyrolactone, γ-Butyrolactone), and a photosensitizer (triaryl boron fluoride salt, HSbF6). Compared with the manufacturing process of traditional X-ray detection elements, when manufacturing the grid structure 50 of the X-ray detection element 10 in this embodiment, the optoelectronic semiconductor layer 30 will not be damaged due to excessive ultraviolet light irradiation, thereby improving the manufacturing yield of the X-ray detection element 10. In addition, the technology of making the grid-shaped grid structure 50 with SU-8 photoresist or polymethyl methacrylate is relatively mature. And since the position where the scintillator 60 is to be formed is defined by the grid structure 50, when the scintillator 60 is formed on the second surface 332, due to the material characteristics of the scintillator 60, the scintillator 60 will be formed within each grid of the grid structure 50 and have gaps with other surrounding grids, and will not adhere to the scintillator 60 formed in other surrounding grids. Therefore, the manufacturing yield of the X-ray detection element 10 can also be improved.

[0034] Figure 2 It is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention. Please refer to Figure 2, the X-ray detection element 10A is similar to the X-ray detection element 10. The same elements are denoted by the same symbols and will not be described in detail herein. The difference between the X-ray detection element 10A and the X-ray detection element 10 is that the X-ray detection element 10A further includes a passivation layer 70, and the passivation layer 70 covers at least part of the optoelectronic semiconductor layer 30 and at least part of the lateral electrode posts 40 to provide protection for these elements. Among them, the passivation layer 70 covers at least part of the optoelectronic semiconductor layer 30 and the lateral electrode posts 40 to expose at least part of the first coupling surface 341, at least part of the second coupling surface 421, and at least part of the second surface 332, which can save the material cost of the passivation layer 70. For example, the connection surfaces of the first coupling surface 341 and the second coupling surface 421 to the thin film transistor layer 20 do not have the passivation layer 70, that is, the passivation layer 70 does not cover the first coupling surface 341 and the second coupling surface 421. Similarly, the passivation layer 70 does not cover the second surface 332. In some other preferred embodiments, the material of the passivation layer can be an organic insulating material, an inorganic insulating material, or a combination thereof, such as silicon oxide, silicon nitride, silicon oxynitride, polyimide (PI), polyamic acid (PAA), polyamide (PA), polyvinyl alcohol (PVA), polyvinyl cinnamate (PVCi), or other suitable materials, or a mixture of the above materials. The present invention is not limited thereto.

[0035] Figure 3 is according to Figure 1A Flowchart of the manufacturing method of the X-ray detection element according to the embodiment, Figures 4A to 4H is according to Figure 3 Schematic diagram of the manufacturing method of the X-ray detection element according to the embodiment. This manufacturing method can be applied to the aforementioned X-ray detection element 10 and the following X-ray detection element 10B. Please refer to Figure 3 and Figure 4A , step S101, provide a semiconductor substrate 35, where the semiconductor substrate 35 is, for example, a silicon wafer. Please refer to Figure 3 and Figure 4B , step S102, dope the semiconductor substrate 35 to form a first semiconductor layer 31, a second semiconductor layer 32, and a third semiconductor layer 33 stacked in sequence. Among them, the third semiconductor layer 33 includes a first surface 331 and a second surface 332 opposite to the first surface 331, and the first surface 331 is adjacent to the second semiconductor layer 32. In this embodiment, the first semiconductor layer 31 is, for example, doped with atoms such as phosphorus or antimony to form an N-type semiconductor structure, and the third semiconductor layer 33 is, for example, doped with atoms such as boron or indium to form a P-type semiconductor structure. Please refer to Figure 3 and Figure 4C, in step S103, etch the first semiconductor layer 31 and the second semiconductor layer 32 to expose at least part of the first surface 331. In this embodiment, for example, hydrofluoric acid is used as the main component of the etching solution.

[0036] Please refer to Figure 3 and Figure 4D , in step S104, form a conductive column 41 on the first surface 331. The conductive column 41 is formed on the first surface 331 in a lateral growth (such as deposition) manner. In this embodiment, the conductive column 41 is made of conductive materials such as copper and tin. Please refer to Figure 3 and Figure 4E , in step S105, deposit a first electrode layer 34 on the first semiconductor layer 31 to form a photo-semiconductor layer 30. That is, the photo-semiconductor layer 30 is formed by the foregoing first semiconductor layer 31, second semiconductor layer 32, third semiconductor layer 33, and first electrode layer 34 together. In addition, deposit a second electrode layer 42 on the conductive column 41 to form a lateral electrode column 40. The first electrode layer 34 and the second electrode layer 42 can be made of metal materials. Please refer to Figure 3 and Figure 4F , in step S106, provide a thin-film transistor layer 20. The thin-film transistor layer 20 is made of, for example, IGZO on a glass substrate.

[0037] Please refer to Figure 3 and Figure 4G , in step S107, form a grid structure 50 on the thin-film transistor layer 20. The grid structure 50 is formed on the thin-film transistor layer 20 by, for example, a lithography process. Compared with the manufacturing process of traditional X-ray detection elements, when manufacturing the grid structure 50, since the thin-film transistor layer 20 is an independent component from the semiconductor substrate 35 in this step and the subsequent step S108 has not been performed, components such as the photo-semiconductor layer 30 (including the foregoing first electrode layer 34, first semiconductor layer 31, second semiconductor layer 32, and third semiconductor layer 33), lateral electrode column 40, and second electrode layer 42 will not be damaged by ultraviolet light irradiation in this step. Therefore, the manufacturing yield of the X-ray detection element 10 can be improved. Please refer to Figure 3 and Figure 4H, Step S108, couple the optoelectronic semiconductor layer 30 and the lateral electrode column 40 to the thin-film transistor layer 20, wherein the first electrode layer 34 and the second electrode layer 42 are coupled to the thin-film transistor layer 20. Specifically, the optoelectronic semiconductor layer 30 (including the aforementioned first electrode layer 34, first semiconductor layer 31, second semiconductor layer 32, and third semiconductor layer 33), lateral electrode column 40, second electrode layer 42, etc. fabricated up to Step S105 are flipped 180 degrees in a known manner, so that the first coupling surface 341 of the first electrode layer 34 and the second coupling surface 421 of the second electrode layer 42 are coupled to the thin-film transistor layer 20. Among them, the first coupling surface 341 of the first electrode layer 34 and the second coupling surface 421 of the second electrode layer 42 are coplanar to reduce the difficulty of coupling the first electrode layer 34 and the second electrode layer 42 to the thin-film transistor layer 20. In this way, the manufacturing yield of the X-ray detection element 10 can be improved. Please refer to Figure 3 and Figure 4I , Step S109, form a scintillator 60 on the second surface 332. Specifically, since the position where the scintillator 60 is to be formed is defined by the grid structure 50, when the scintillator 60 is formed on the second surface 332, the scintillator 60 will be formed within each grid of the grid structure 50 and have gaps with other surrounding grids, and will not adhere to the scintillator 60 formed in other surrounding grids, and finally the manufacturing of the X-ray detection element 10 is completed. Among them, the material of the scintillator 60 is preferably selected from the group consisting of CsI(Tl) and Gd2O2S:Tb (GOS:Tb). When the material of the scintillator 60 is CsI(Tl), the scintillator 60 can be formed on the second surface 332 by thermal evaporation or inlaying. The evaporation is co-evaporation using CsI and TlI as evaporation sources. After the scintillator 60 is formed on the second surface 332, the manufacturing of the X-ray detection element 10 can be completed.

[0038] Figure 5 is according to Figure 2 the flowchart of the manufacturing method of the X-ray detection element according to the embodiment. Figure 6 is according to Figure 5 the schematic diagram of the manufacturing method of the X-ray detection element according to the embodiment. Please refer to Figure 5 and Figure 6 , this manufacturing method can be applied to the aforementioned X-ray detection element 10A. Figure 5 In Figure 3 , the manufacturing method of the X-ray detection element is substantially the same as Figure 5 that of Figure 3The difference in the method of manufacturing the X-ray detection element lies in that after step S105 is completed, step S201 is first performed: forming a passivation layer 70, where the passivation layer 70 covers at least part of the optoelectronic semiconductor layer 30 and at least part of the lateral electrode posts 40 to provide a certain degree of protection for these elements. In this embodiment, the passivation layer 70 can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), spin coating, or other applicable processes. In addition, the passivation layer 70 does not cover the first coupling surface 341 of the first electrode layer 34 and the second coupling surface 421 of the second electrode layer 42 to avoid affecting the subsequent step S108, that is, the process of coupling the first electrode layer 34 and the second electrode layer 42 to the thin film transistor layer 20. Additionally, the passivation layer 70 also does not cover the second surface 332 of the third semiconductor layer 33, so that the scintillator 60 formed in the subsequent step S109 is not affected by the passivation layer 70 during the process of converting X-rays into visible light and transmitting it to the optoelectronic semiconductor layer 30.

[0039] Figure 7 is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention. Please refer to Figure 7 , Figure 7 The X-ray detection element 10B is similar to the aforementioned X-ray detection elements 10 and 10A, and the same elements are denoted by the same reference numerals and will not be elaborated here. The difference between the X-ray detection element 10B and the aforementioned X-ray detection elements 10 and 10A is that in this embodiment, the material of the scintillator 60A is GOS:Tb. Compared with other available materials for scintillators, GOS:Tb is in powder form and can be formed on the second surface 332 of the third semiconductor layer 33 by coating. Since the GOS:Tb powder has advantages such as high chemical stability and not being prone to deliquescence, the packaging difficulty of the scintillator 60A can be reduced.

[0040] Figure 8 is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention. Please refer to Figure 8 , Figure 8The X-ray detection element 10C is similar to the aforementioned X-ray detection elements 10, 10A, and 10B. The same elements are denoted by the same reference numerals and will not be described in detail herein. The difference between the X-ray detection element 10C and the aforementioned X-ray detection elements 10, 10A, and 10B is that a reflective layer 80 can be selectively provided at the position where the grid structure 50 correspondingly surrounds the scintillator 60. The reflective layer 80 is made of a material with high reflectivity such as metal or titanium dioxide. The reflective layer 80 can further reflect and condense the visible light converted by the scintillator 60 to improve the photoelectric conversion efficiency of the optoelectronic semiconductor layer 30.

[0041] Figure 9 is a schematic structural diagram of an X-ray detection element according to another embodiment of the present invention. Please refer to Figure 9 , Figure 9 The X-ray detection element 10D is similar to the aforementioned X-ray detection elements 10, 10A, 10B, and 10C. The same elements are denoted by the same reference numerals and will not be described in detail herein. The difference between the X-ray detection element 10D and the aforementioned X-ray detection elements 10, 10A, 10B, and 10C is that it further includes a packaging layer 90, and the packaging layer 90 is arranged to cover the scintillator 60 and at least part of the grid structure 50. The packaging layer 90 can be a multi-layer film structure, such as PET, aluminum foil, titanium dioxide, parylene, or a combination of the above materials. The packaging layer 90 can achieve the effect of protecting the entire X-ray detection element 10D. In addition, in this embodiment, the X-ray detection element 10D has a scintillator 60 (selected as CsI(Tl)), and the packaging layer 90 covers this scintillator 60. However, in other preferred embodiments, the packaging layer 90 can also cover the X-ray detection element with a scintillator 60A (selected as GOS:Tb). The present invention is not limited thereto. Additionally, the X-ray detection element 10D in this embodiment includes a passivation layer 70. However, in other preferred embodiments, the X-ray detection element 10D may not include the passivation layer 70 to reduce the manufacturing cost.

[0042] Figure 10 is according to Figure 9 a flowchart of a manufacturing method of an X-ray detection element according to an embodiment. Please refer to Figure 9 and Figure 10 , and this manufacturing method can be applied to the aforementioned X-ray detection element 10D. Figure 10 In Figure 3 , Figure 5 the manufacturing method of the X-ray detection element is substantially the same as that in Figure 10 The manufacturing method of the X-ray detection element in Figure 3 , Figure 5The difference in the manufacturing method of the X-ray detection element lies in that after step S109 is completed, step S301 is further performed: covering the encapsulation layer 90 on the surface of the scintillator 60 and part of the grid structure 50 to provide better overall protection for the X-ray detection element 10D. In this embodiment, the encapsulation layer 90 can be a multi-layer film structure, such as PET, aluminum foil, titanium dioxide, parylene or a combination of the above materials, and can be covered on the surface of the scintillator 60 and at least part of the grid structure 50 by known manufacturing methods. In addition, in this embodiment, after step S105 is completed, step S201: forming a passivation layer 70 will be performed first. However, the present invention is not limited thereto. After step S105 is completed, step S106 can also be directly performed, omitting the step of forming the passivation layer to reduce the manufacturing cost.

[0043] In summary, in the X-ray detection element of the present invention, since the grid structure is directly disposed on the thin film transistor layer, and the grid structure at least partially surrounds the optoelectronic semiconductor layer, the lateral electrode posts, and the scintillator, in this way, when manufacturing the X-ray detection element, it is possible to avoid the light energy damaging the optoelectronic semiconductor structure due to the overlong exposure time of the light.

[0044] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claimed rights.

Claims

1. An X-ray detection element, characterized in that: include: Thin film transistor layer; a photoelectric semiconductor layer, disposed on the thin film transistor layer, the photoelectric semiconductor layer comprising a first electrode layer, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer stacked in sequence, wherein the third semiconductor layer comprises a first surface and a second surface opposite to the first surface, the first electrode layer has a first coupling surface, and the first electrode layer is coupled to the thin film transistor layer via the first coupling surface; Lateral electrode column, comprising: A conductive column formed on the first surface, wherein the conductive column has a first end and a second end opposite to the first end, and the first end is coupled to the third semiconductor layer; a second electrode layer formed at the second end of the conductive pillar, wherein the second electrode layer has a second coupling surface, the second electrode layer is coupled to the thin film transistor layer via the second coupling surface, and the first coupling surface and the second coupling surface are coplanar; a scintillator, disposed on the second surface; A grid structure is disposed on the thin film transistor layer, wherein the grid structure surrounds the photoelectric semiconductor layer, the lateral electrode columns and at least a portion of the scintillator.

2. The X-ray detection element according to claim 1, characterized in that The material of the photoelectric semiconductor layer is selected from the group consisting of silicon, gallium arsenide and indium phosphide.

3. The X-ray detection element according to claim 1, characterized in that The material of the scintillator is selected from the group consisting of NaI(Tl), CsI(Tl), BGO, LSO:Ce, GSO:Ce, YSO:Ce, YAP:Ce, Gd2O2S:Tb, and Y2O2S:Tb.

4. The X-ray detection element according to claim 1, characterized in that The material of the grid structure is selected from the group consisting of bisphenol A novolac epoxy resin, γ-butyrolactone, a photoresist of triaryl fluoride boron salt and polymethyl methacrylate.

5. The X-ray detection element according to claim 1, characterized in that The invention also includes a passivation layer, wherein the passivation layer covers at least a portion of the photoelectric semiconductor layer and at least a portion of the lateral electrode column to expose at least a portion of the first coupling surface, at least a portion of the second coupling surface, and at least a portion of the second surface.

6. The X-ray detection element according to claim 1, characterized in that It also includes a packaging layer, which covers the scintillator and at least a portion of the grid structure.

7. The X-ray detection element according to claim 1, characterized in that The grid structure contacts the scintillator, and there are gaps between the grid structure, the photoelectric semiconductor layer and the lateral electrode columns.

8. A method for manufacturing an X-ray detection element, characterized in that The following steps are involved: providing a semiconductor substrate; Doping the semiconductor substrate to form a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer stacked in sequence, wherein the third semiconductor layer includes a first surface and a second surface opposite to the first surface; Etching the first semiconductor layer and the second semiconductor layer to expose at least a portion of the first surface; forming a conductive column on the first surface; Depositing a first electrode layer on the first semiconductor layer to form a photoelectric semiconductor layer, and depositing a second electrode layer on the conductive column to form a lateral electrode column, wherein the first electrode layer has a first coupling surface, the second electrode layer has a second coupling surface, and the first coupling surface and the second coupling surface are coplanar; providing a thin film transistor layer; forming a grid structure on the thin film transistor layer; coupling the photoelectric semiconductor layer and the lateral electrode column to the thin film transistor layer, wherein the grid structure surrounds the photoelectric semiconductor layer and the lateral electrode column; A scintillator is formed on the second surface, wherein the grid structure surrounds at least a portion of the scintillator.

9. The method for manufacturing an X-ray detection element as claimed in claim 8, characterized in that The material of the photoelectric semiconductor layer is selected from the group consisting of silicon, gallium arsenide and indium phosphide.

10. The method for manufacturing an X-ray detection element as claimed in claim 8, characterized in that The material of the scintillator is selected from the group consisting of NaI(Tl), CsI(Tl), BGO, LSO:Ce, GSO:Ce, YSO:Ce, YAP:Ce, Gd2O2S:Tb, and Y2O2S:Tb.

11. The method for manufacturing an X-ray detection element as claimed in claim 8, wherein the material of the grid structure is selected from the group consisting of bisphenol A novolac epoxy resin, γ-butyrolactone, a photoresist of triaryl fluoride boron salt, and polymethyl methacrylate.

12. The method for manufacturing an X-ray detection element as claimed in claim 8, characterized in that The following steps are also included: A passivation layer is formed, wherein the passivation layer covers at least a portion of the photoelectric semiconductor layer and at least a portion of the lateral electrode pillars to expose at least a portion of the first coupling surface, at least a portion of the second coupling surface, and at least a portion of the second surface.

13. The method for manufacturing an X-ray detection element as claimed in claim 8, characterized in that The following steps are also included: A packaging layer is covered on the surface of the scintillator and at least a portion of the grid structure.

14. The method for manufacturing an X-ray detection element as claimed in claim 8, characterized in that The grid structure contacts the scintillator, and there are gaps between the grid structure, the photoelectric semiconductor layer and the lateral electrode columns.

15. The method for manufacturing an X-ray detection element as claimed in claim 8, characterized in that In the step of coupling the photoelectric semiconductor layer and the lateral electrode pillars to the thin film transistor layer, the first electrode layer and the second electrode layer are coupled to the thin film transistor layer.

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