Evaporation source unit, film forming apparatus, and film forming method

Abstract

Provided is an evaporation source unit for forming a film on a substrate relatively moving in a moving direction, the evaporation source unit comprising: a first evaporation source group including a plurality of first evaporation sources arranged side by side in an intersecting direction intersecting the moving direction, the plurality of first evaporation sources being arranged side by side in the intersecting direction, and the first evaporation source group including a plurality of second evaporation sources arranged side by side in the intersecting direction; first evaporation substances attached to the substrate are discharged respectively; a second evaporation source group including a plurality of second evaporation sources arranged side by side in the intersecting direction and each emitting a second evaporation substance adhering to the substrate, the second evaporation source group being arranged further to the outside than the first evaporation source group in the moving direction; a first crystal monitor that monitors the state of the first vapor deposition material emitted from the first evaporation source; and a second crystal monitor that monitors the state of the second vapor deposition material emitted from the second evaporation source. The adhesion amount of the second vapor deposition material discharged from the second evaporation source and adhering to the second crystal monitor is smaller than the adhesion amount of the first vapor deposition material discharged from the first evaporation source and adhering to the first crystal monitor.

Description

Technical Field

[0001] The present invention relates to an evaporation source unit, a film forming apparatus, and a film forming method. Background Art

[0002] In the manufacture of an organic EL display or the like, a film (thin film) is formed on a substrate by attaching a vapor deposition material released from an evaporation source to the substrate. A sensor (film formation rate monitor) for monitoring the state of the vapor deposition material evaporated from the evaporation source, such as the evaporation rate and the film formation rate, is disclosed in Patent Document 1 when forming a film using a plurality of evaporation sources.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-218623 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, in the case of forming a film using a plurality of evaporation sources, monitoring devices including a film formation rate monitor or the like are basically provided for each evaporation source separately. However, depending on the positional relationship between the monitoring device and the evaporation source to be monitored, the monitoring accuracy of the monitoring device may be reduced. In this case, it becomes difficult to control the film formation rate, and the uniformity of the film thickness of the film formed on the substrate may be reduced.

[0008] The present invention provides a technique that is advantageous for uniformizing the film thickness of a film formed on a substrate.

[0009] Means for Solving the Problems

[0010] An evaporation source unit according to an aspect of the present invention forms a film on a substrate that moves relatively in a moving direction, and is characterized in that the evaporation source unit includes: a first evaporation source group including a plurality of first evaporation sources arranged along an intersecting direction intersecting the moving direction and respectively emitting a first evaporation material attached to the substrate; a second evaporation source group including a plurality of second evaporation sources arranged along the intersecting direction and respectively emitting a second evaporation material attached to the substrate, the second evaporation source group being arranged at a position outside the first evaporation source group in the moving direction; a first crystal monitor for monitoring the state of the first evaporation material emitted from the first evaporation source; and a second crystal monitor for monitoring the state of the second evaporation material emitted from the second evaporation source, and the amount of the second evaporation material emitted from the second evaporation source and attached to the second crystal monitor is smaller than the amount of the first evaporation material emitted from the first evaporation source and attached to the first crystal monitor.

[0011] Effects of the Invention

[0012] According to the present invention, for example, a technique advantageous for uniformizing the film thickness of a film formed on a substrate can be provided.

[0013] Other features and advantages of the present invention will become apparent from the following description with reference to the drawings. In the drawings, the same or identical structures are denoted by the same reference numerals. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The drawings are included in the specification, form a part thereof, show embodiments of the present invention, and are used together with the description to explain the principles of the present invention.

[0015] Figure 1 is a plan view schematically showing the structure of a film forming system having a film forming apparatus according to an aspect of the present invention.

[0016] Figure 2 is a front view schematically showing the structure of a film forming apparatus according to an aspect of the present invention.

[0017] Figure 3 is a view for explaining the structure of the evaporation source unit.

[0018] Figure 4 is a view for explaining the structure of the evaporation source unit.

[0019] Figure 5 is a cross-sectional view schematically showing the structure of the evaporation source. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiments do not limit the invention described in the claims, and not all combinations of the features described in the embodiments are essential for the invention. Two or more of the features described in the embodiments can be arbitrarily combined. In addition, the same reference numerals are assigned to the same or identical structures, and repeated descriptions are omitted.

[0021] Figure 1 It is a top view schematically showing the structure of a film forming system SY having a film forming apparatus 1 as one embodiment of the present invention. The film forming system SY is a system that performs a film forming process on a loaded substrate and unloads the substrate on which the film forming process has been performed. For example, by arranging a plurality of film forming systems SY, a production line of electronic devices is constituted. As the electronic device, for example, a display panel of an organic EL display device for a smartphone can be cited.

[0022] As Figure 1 shown, the film forming system SY includes a film forming apparatus 1, a loading chamber 60, a substrate transfer chamber 62, an unloading chamber 64, and a mask storage chamber 66. In addition, the structure of the film forming apparatus 1 will be described in detail later.

[0023] In the loading chamber 60, a substrate 100 to be subjected to a film forming process in the film forming apparatus 1 is loaded from the outside of the film forming apparatus 1. In the substrate transfer chamber 62, a transfer robot 620 for transferring the substrate 100 is provided. The transfer robot 620 transfers the substrate 100 loaded into the loading chamber 60 to the film forming apparatus 1. In addition, the transfer robot 620 transfers the substrate 100 on which the film forming process has been performed in the film forming apparatus 1 to the unloading chamber 64. The substrate 100 transferred to the unloading chamber 64 by the transfer robot 620 is unloaded from the unloading chamber 64 to the outside of the film forming system SY. In addition, when a plurality of film forming systems SY are arranged, the unloading chamber 64 of the upstream film forming system SY can also serve as the substrate transfer chamber 62 of the downstream film forming system SY. In the mask storage chamber 66, a mask 101 used in the film forming process of the film forming apparatus 1 is stored. The mask 101 stored in the mask storage chamber 66 is transferred to the film forming apparatus 1 by the transfer robot 620.

[0024] The inside of the film forming apparatus 1 and each chamber constituting the film forming system SY is maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. In addition, in the present embodiment, the "vacuum state" means a state filled with a gas having a pressure lower than the atmospheric pressure, that is, a reduced pressure state.

[0025] Figure 2 It is a front view schematically showing the structure of a film forming apparatus 1 as one embodiment of the present invention. In the following figures, the arrows X and Y represent horizontal directions orthogonal to each other, and the arrow Z represents the vertical direction (vertical direction).

[0026] The film forming apparatus 1 is an apparatus that performs a film forming process of forming a film (thin film) on a substrate by moving an evaporation source relative to the substrate and attaching (evaporating) a vapor deposition material released from the evaporation source to the substrate. The film forming apparatus 1 is used, for example, as a manufacturing apparatus for a display panel of an organic EL display device for a smartphone. As described above, by arranging a plurality of them, a production line is constituted. As the material of the substrate on which the film forming process is performed in the film forming apparatus 1, glass, resin, metal, etc. can be appropriately selected, and a structure in which a resin layer such as polyimide is formed on glass is particularly preferable. As the vapor deposition material, an organic material or an inorganic material (for example, metal, metal oxide) etc. can be used. In addition, the film forming apparatus 1 is not limited to the manufacture of a display panel of an organic EL display device, and can also be applied as a manufacturing apparatus for electronic devices such as a display device (flat panel display), a thin film solar cell, and an organic optoelectronic conversion element (organic thin film imaging element), and an optical member. In addition, in the present embodiment, the film forming apparatus 1 performs a film forming process on a glass substrate of G8H size (1100 mm × 2500 mm, 1250 mm × 2200 mm), but the size of the substrate on which the film forming apparatus 1 performs the film forming process can be appropriately set.

[0027] As Figure 2 shown, the film forming apparatus 1 includes an evaporation source unit 10 and a plurality of film forming stages 30A and 30B. The evaporation source unit 10 and the film forming stages 30A and 30B are disposed inside a chamber 45 that is maintained in a vacuum state during the film forming process (when in use). In the present embodiment, the plurality of film forming stages 30A and 30B are separated and disposed in the upper part of the chamber 45 in the X direction, and the evaporation source unit 10 is provided below them. In addition, a plurality of loading / unloading ports (not shown) for loading and unloading the substrate 100 are provided in the chamber 45.

[0028] The film forming apparatus 1 further includes a power supply 41 that supplies power to the evaporation source unit 10 and an electrical connection portion 42 that electrically connects the evaporation source unit 10 and the power supply 41. The electrical connection portion 42 includes electrical wiring built in an arm that can move in the horizontal direction, and is configured to be able to supply power from the power supply 41 to the evaporation source unit 10 that can move in the X direction.

[0029] The film forming apparatus 1 further includes a control unit 43 that controls the operations of the respective components of the film forming apparatus 1. The control unit 43 is constituted by, for example, a computer (information processing device) including a processor represented by a CPU, a memory such as a RAM and a ROM, and various interfaces. The control unit 43 realizes various operations and processes in the film forming apparatus 1 by reading and executing a program stored in the ROM in the RAM. In addition, instead of the control unit 43, each component of the film forming apparatus 1 can be directly controlled by a main computer that collectively controls the film forming system SY.

[0030] The film-forming stage 30A is a stage for performing a film-forming process on the substrate 100A. The film-forming stage 30A supports the substrate 100A and the mask 101A, and adjusts the relative positions of the substrate 100A and the mask 101A. The film-forming stage 30A includes a substrate support portion 32A, a mask support portion 34A, a support column 35A, and an alignment mechanism 36A.

[0031] The substrate support portion 32A supports the substrate 100A. In the present embodiment, the substrate support portion 32A supports the substrate 100A such that the short side of the substrate 100A is in the X direction and the long side of the substrate 100A is in the Y direction. The substrate support portion 32A supports the edge of the substrate 100A from the lower side of the substrate 100A. However, the substrate support portion 32A may support the substrate 100A by clamping the edge of the substrate 100A, or may support the substrate 100A by adsorbing the substrate 100A with an electrostatic chuck or an adhesive chuck or the like. The substrate support portion 32A receives the substrate 100A carried into the film-forming system SY via the transfer robot 620 provided in the substrate transfer chamber 62. In addition, a lifting mechanism (not shown) for enabling the substrate support portion 32A to move up and down is provided in the substrate support portion 32A, and the substrate 100A received from the transfer robot 620 can be made to coincide with the mask 101A supported by the mask support portion 34A. This lifting mechanism can apply well-known techniques in the art such as a ball screw mechanism.

[0032] The mask support portion 34A supports the mask 101A. In the present embodiment, an opening (not shown) is provided in the mask support portion 34A, and the evaporation material adheres (scatters) to the film-forming surface (the surface on which the film is formed) of the substrate 100A that coincides with the mask 101A via this opening. The mask support portion 34A is supported by the chamber 45 via the support column 35A.

[0033] The alignment mechanism 36A performs alignment (registration) for adjusting the relative positions of the substrate 100A and the mask 101A. The alignment mechanism 36A aligns the substrate 100A supported on the substrate support portion 32A and the mask 101A supported on the mask support portion 34A by adjusting the relative positions of the substrate support portion 32A and the mask support portion 34A in the horizontal direction. Well-known techniques in the art can be applied to the alignment of the substrate 100A and the mask 101A. For example, first, the alignment mechanism 36A detects alignment marks respectively formed on the substrate 100A and the mask 101A with a camera (not shown). Then, the alignment mechanism 36A adjusts the positional relationship between the substrate 100A and the mask 101A such that the relationship between the position of the substrate 100A obtained by detecting these marks and the position of the mask 101A satisfies a specified condition. Specifically, the marks formed on the substrate 100A are made to coincide with the marks formed on the mask 101A, the offset amount of these marks is detected with a camera, and the position of the substrate 100A is adjusted to satisfy the specified condition (within the allowable range).

[0034] When the substrate 100A and the mask 101A are aligned by the alignment mechanism 36A, the substrate support portion 32A makes the supported substrate 100A coincide with the mask 101A. In a state where the substrate 100A and the mask 101A coincide, a film forming process by the evaporation source unit 10 is performed on the substrate 100A.

[0035] The film forming stage 30B includes the same structure as the film forming stage 30A. The film forming stage 30B includes a substrate support portion 32B, a mask support portion 34B, a support column 35B, and an alignment mechanism 36B. The substrate support portion 32B, the mask support portion 34B, the support column 35B, and the alignment mechanism 36B respectively correspond to the substrate support portion 32A, the mask support portion 34A, the support column 35A, and the alignment mechanism 36A.

[0036] In the present embodiment, the film forming apparatus 1 has a plurality of film forming stages 30A and 30B, and is embodied as a film forming apparatus with a so-called dual stage. Therefore, during the film forming process (such as evaporation) on the substrate 100A on the film forming stage 30A, the alignment of the substrate 100B and the mask 101B can be performed on the film forming stage 30B, and the film forming process can be efficiently performed.

[0037] Next, with reference to Figure 3 and Figure 4 , the evaporation source unit 10 will be described. Here, an outline of each element constituting the evaporation source unit 10 will be described, and the configuration structure and operation example of the evaporation source unit 10 will be described in detail later. Figure 3 is a view for explaining the structure of the evaporation source unit 10, and is a view schematically showing the evaporation source unit 10 from the side (Y direction). Figure 4 is a view for explaining the structure of the evaporation source unit 10, and is a view schematically showing the evaporation source unit 10 from above (Z direction).

[0038] In the present embodiment, the evaporation source unit 10 is a unit for performing a film forming process on the substrate 100 by discharging a vapor deposition material while moving in the X direction. The evaporation source unit 10 includes a plurality of evaporation sources 11a to 11r, a plurality of monitoring devices 12a to 12r, baffles 161 to 163, and a moving portion 20.

[0039] Figure 5 is a cross-sectional view schematically showing the structure of the evaporation sources 11a to 11r. The plurality of evaporation sources 11a to 11r respectively discharge a vapor deposition material. As Figure 5 shown, the plurality of evaporation sources 11a to 11r respectively include a material container 111 and a heating portion 112.

[0040] The material container 111 is a crucible that houses the evaporation material attached to the substrate 100 inside. An emission part 1111 for emitting the evaporation material evaporated inside the material container 111 to the outside of the material container 111 is provided at the upper part of the material container 111. In the present embodiment, the emission part 1111 is configured as an opening (emission port) formed on the upper surface of the material container 111, but is not limited thereto. For example, the function of the emission part 1111 can also be achieved by configuring the material container 111 with a cylindrical member or the like. In addition, a plurality of openings can be provided on the upper surface of the material container 111 as the emission part 1111.

[0041] The heating part 112 heats the evaporation material housed in the material container 111 and causes it to evaporate. The heating part 112 is preferably provided so as to cover the entire material container 111, for example. In the present embodiment, the heating part 112 is specifically embodied as a sheathed heater using a heating wire, Figure 5 which shows a cross-section when the heating wire of the sheathed heater is wound around the material container 111.

[0042] The heating of the evaporation material by the heating part 112 is controlled by the control part 43. In the present embodiment, each of the plurality of evaporation sources 11a to 11r independently includes the material container 111 and the heating part 112. Therefore, the control part 43 can independently control the heating (evaporation) of the evaporation material performed by the plurality of evaporation sources 11a to 11r.

[0043] Return Figure 3 and Figure 4 , the plurality of evaporation sources 11a to 11r are roughly divided into three evaporation source groups 17A to 17C that are separated from each other along the moving direction (X direction) of the evaporation source unit 10. The evaporation source group 17A includes a plurality of evaporation sources 11a to 11f arranged along the crossing direction (Y direction) that crosses the moving direction of the evaporation source unit 10. The evaporation source group 17B includes a plurality of evaporation sources 11g to 11l arranged along the crossing direction that crosses the moving direction of the evaporation source unit 10. The evaporation source group 17C includes a plurality of evaporation sources 11m to 11r arranged along the crossing direction that crosses the moving direction of the evaporation source unit 10.

[0044] In the present embodiment, the three evaporation source groups 17A to 17C are arranged in the order of the evaporation source group 17A, the evaporation source group 17B, and the evaporation source group 17C in the moving direction of the evaporation source unit 10. Therefore, if we focus on the evaporation sources included in each of the evaporation source groups 17A to 17C, for example, the evaporation source 11d, the evaporation source 11j, and the evaporation source 11p are arranged in sequence along the moving direction of the evaporation source unit 10. In addition, the three evaporation source groups 17A to 17C can emit mutually different evaporation materials.

[0045] A plurality of monitoring devices 12a to 12r are provided corresponding to a plurality of evaporation sources 11a to 11r. Each of the plurality of monitoring devices 12a to 12r monitors the state (emission state) of the evaporation material emitted from each of the plurality of evaporation sources 11a to 11r, for example, the rate of the evaporation material (evaporation rate (film formation rate)). As Figure 3 shown, the monitoring devices 12a to 12r include a housing 121 and a crystal oscillator 123 (crystal monitor) provided as a thick film sensor inside the housing 121. An evaporation material emitted from the evaporation source 11 and introduced into the inside of the housing 121 through an introduction portion 122 provided on the housing 121 is attached to the crystal oscillator 123. The vibration frequency of the crystal oscillator 123 varies according to the amount (attachment amount) of the evaporation material attached to the crystal oscillator 123. Therefore, the control unit 43 can calculate the film thickness of the evaporation material deposited (evaporated) on the substrate 100 based on the vibration frequency of the crystal oscillator 123. Since the amount of the evaporation material attached to the crystal oscillator 123 per unit time is correlated with the amount of the evaporation material emitted from the evaporation source 11, as a result, the monitoring devices 12a to 12r can monitor the state of the evaporation material emitted from the plurality of evaporation sources 11.

[0046] In the present embodiment, the monitoring devices 12a to 12r independently monitor the states of the evaporation materials emitted from the evaporation sources 11a to 11r, respectively. In addition, the control unit 43 independently controls the evaporation sources 11a to 11r (the outputs of the respective heating units) according to the monitoring results of the monitoring devices 12a to 12r. In other words, the control unit 43 controls the film formation rates of the evaporation sources 11a to 11r respectively according to the rates of the evaporation materials monitored by the monitoring devices 12a to 12r.

[0047] The restricting unit 14 restricts the emission range of the evaporation materials emitted from the plurality of evaporation sources 11a to 11r. In the present embodiment, the restricting unit 14 includes a plurality of plate members 141 to 144. The plate members 141 and 142 restrict the emission range in the X direction of the evaporation materials emitted from the plurality of evaporation sources 11a to 11f. The plate members 142 and 143 restrict the emission range in the X direction of the evaporation materials emitted from the plurality of evaporation sources 11g to 11l. The plate members 143 and 144 restrict the emission range in the X direction of the evaporation materials emitted from the plurality of evaporation sources 11g to 11r.

[0048] On the plate members 141, cylindrical members 141a to 141l through which the evaporation substances (scattered) introduced into the monitoring devices 12a to 12l pass are provided. On the plate member 142, cylindrical members 142g to 142l through which the evaporation substances introduced into the monitoring devices 12g to 12l pass are provided. On the plate member 144, cylindrical members 144m to 144l through which the evaporation substances introduced into the monitoring devices 12m to 12r pass are provided. The cylindrical members 141a to 141l, 142g to 142l, and 144m to 144l help to suppress the reduction in the monitoring accuracy of the monitoring devices caused by the evaporation substances released from adjacent evaporation sources entering the monitoring devices outside the monitoring target (so-called crosstalk).

[0049] The baffle plates 161 to 163 control the scattering of the evaporation substances released from the evaporation source groups 17A to 17C toward the substrate 100. The baffle plates 161 to 163 are arranged to be displaceable between a blocking position where the scattering of the evaporation substances released from the evaporation source groups 17A to 17C toward the substrate 100 is blocked and a permitting position where the scattering of the evaporation substances toward the substrate 100 is permitted. For example, the baffle plate 161 is arranged to be displaceable between a blocking position where the scattering of the evaporation substances released from the evaporation sources 11a to 11f included in the evaporation source group 17A toward the substrate 100 is blocked and a permitting position where the scattering of the evaporation substances toward the substrate 100 is permitted. The baffle plates 162 and 163 are also arranged to be displaceable between the blocking position and the permitting position in the same manner as the baffle plate 161.

[0050] The baffle plate 161 includes a rotation shaft 1611 having an axial direction (Y direction) intersecting the moving direction of the evaporation source unit 10 and a shielding member 1612 provided on the rotation shaft 1611. The baffle plate 161 is displaced between the shielding position and the permitting position by the opening and closing operation of the shielding member 1612 rotating about the rotation shaft 1611. Similarly, the baffle plate 162 includes a rotation shaft 1621 and a shielding member 1622, and the baffle plate 163 includes a rotation shaft 1631 and a shielding member 1632.

[0051] The rotation shaft 1611 of the baffle plate 161 is arranged to be offset in the moving direction (X direction) of the evaporation source unit 10 with respect to the discharge portions 1111 of the evaporation sources 11a to 11f. Similarly, the rotation shaft 1621 of the baffle plate 162 is arranged to be offset in the moving direction of the evaporation source unit 10 with respect to the discharge portions 1111 of the evaporation sources 11g to 11l. In addition, the rotation shaft 1631 of the baffle plate 163 is arranged to be offset in the moving direction of the evaporation source unit 10 with respect to the discharge portions 1111 of the evaporation sources 11p to 11r. Thereby, when the baffle plates 161 to 163 are in the permitting position, interference between the baffle plates 161 to 163 and the discharge ranges of the evaporation sources 11a to 11r can be suppressed.

[0052] In addition, in the present embodiment, the height of the rotation axis 1611 of the baffle 161 is different from the height of the rotation axis 1621 of the baffle 162. Accordingly, when the baffles 161 and 162 are opened and closed simultaneously, interference between the baffle 161 and the baffle 162 can be suppressed, and the baffles 161 and 162 can be arranged compactly in the X direction.

[0053] In addition, in the present embodiment, the rotation axis 1621 of the baffle 162 covering and disposed above the evaporation source group 17B on the +X direction side with respect to the evaporation source group 17A is disposed offset in the +X direction with respect to the emission part 1111 of the evaporation sources 11g to 11l. On the other hand, the rotation axis 1611 of the baffle 161 covering and disposed above the evaporation source group 17A on the -X direction side with respect to the evaporation source group 17B is disposed offset in the -X direction with respect to the emission part 1111 of the evaporation sources 11a to 11f. Therefore, the baffles 161 and 162 are configured in a structure like two doors. Accordingly, when co-evaporation is performed on the evaporation source group 17A and the evaporation source group 17B, interference between the baffle 161 and the emission range of the evaporation source group 17B, or interference between the baffle 162 and the emission range of the evaporation source group 17A can be suppressed.

[0054] The moving unit 20 moves the evaporation source unit 10, specifically, the plurality of evaporation sources 11a to 11r and the plurality of monitoring devices 12a to 12r in the moving direction (X direction). In the present embodiment, by the moving unit 20, while moving the evaporation source unit 10 relative to the substrate 100, the evaporation material emitted from the evaporation source unit 10 is attached (evaporated) to the substrate 100, thereby performing a film forming process of forming a film (layer) of the evaporation material on the substrate 100.

[0055] The moving unit 20, as a component provided in the evaporation source unit 10, includes a motor (not shown), a pinion 202 provided on a shaft member that rotates by driving of the motor, and a guide member 203. In addition, the moving unit 20 further includes a rack (not shown) that engages with the pinion 202 and a guide rail 206 on which the guide member 203 slides. The evaporation source unit 10 moves in the X direction along the guide rail 206 by the engagement of the pinion 202 rotated by driving of the motor with the rack.

[0056] In the film forming apparatus 1 configured as described above, the evaporation materials emitted (accommodated) by the evaporation source group 17A (evaporation sources 11a to 11f), the evaporation source group 17B (evaporation sources 11g to 11l), and the evaporation source group 17C (evaporation sources 11m to 11r) are considered.

[0057] In the prior art, there is no particular regulation (restriction) on the evaporation materials released from the evaporation source groups 17A to 17C, and any evaporation materials are accommodated in the evaporation source groups 17A to 17C respectively. However, if an evaporation material with a small amount of adhesion (weight) to the crystal oscillator included in the monitoring device is accommodated in the evaporation source group 17B disposed between the evaporation source groups 17A and 17C (central column), it is difficult to control the rate of the evaporation material released from the evaporation source group 17B with high precision. As described below, there are mainly two reasons for this.

[0058] The first reason is that the control (precision) of the rate of the evaporation material released from the evaporation source group (evaporation source) depends on the amount of adhesion of the evaporation material attached to the crystal oscillator. The physical distance between the evaporation source group 17B in the central column and the monitoring devices 12g to 12l is longer than the physical distance between the evaporation source group 17A and the monitoring devices 12a to 12f or the physical distance between the evaporation source group 17C and the monitoring devices 12m to 12r. If an evaporation material with a small amount of adhesion to the crystal oscillator is accommodated in such an evaporation source group 17B, the amount of adhesion of the evaporation material to the crystal oscillator 123 included in the monitoring devices 12g to 12l is significantly reduced, and the monitoring precision of the monitoring devices 12g to 12l is lowered.

[0059] The second reason is that since the evaporation materials released from the evaporation source group 17A or the evaporation source group 17C adjacent to the evaporation source group 17B enter the monitoring devices 12g to 12l (crosstalk) which are not the monitoring objects, the monitoring precision of the monitoring devices 12g to 12l is lowered.

[0060] Therefore, in the present embodiment, by considering the arrangement relationship of the evaporation source groups 17A to 17C and specifying the evaporation materials released (accommodated) from the evaporation source groups 17A to 17C respectively, the reduction in the monitoring precision of the monitoring device for the evaporation material with a small amount of adhesion on the crystal oscillator is suppressed.

[0061] For example, focusing on the moving direction (X direction) of the evaporation source unit 10, the evaporation source group 17B (first evaporation source group) disposed in the central column and the evaporation source group 17A (second evaporation source group) disposed in the outer column outside the evaporation source group 17B are considered. And, consider the case where a first evaporation material and a second evaporation material with different amounts of adhesion released from the evaporation source and attached to the crystal oscillator are accommodated in the evaporation source group 17A (evaporation sources 11a to 11f) and the evaporation source group 17B (evaporation sources 11g to 11l) respectively. In addition, if the amount of adhesion of the first evaporation material released from the evaporation source and attached to the crystal oscillator is set as the first adhesion amount, the amount of adhesion of the second evaporation material released from the evaporation source and attached to the crystal oscillator is a second adhesion amount smaller than the first adhesion amount. In this way, compared with the first evaporation material, the second evaporation material is an evaporation material with a small amount of adhesion to the crystal oscillator.

[0062] In this case, in the present embodiment, the first evaporation material is accommodated in the evaporation sources 11g to 11l (first evaporation sources) included in the evaporation source group 17B arranged in the central column, and the second evaporation material is accommodated in the evaporation sources 11a to 11f (second evaporation sources) included in the evaporation source group 17A arranged in the outer column. Therefore, the amount of the second evaporation material attached to the crystal oscillators 123 of the monitoring devices 12a to 12f is smaller than the amount of the first evaporation material attached to the crystal oscillators 123 of the monitoring devices 12g to 12l. Thus, in the present embodiment, the evaporation source group 17A including the evaporation sources 11a to 11f that accommodate the second evaporation material with a small amount of attachment to the crystal oscillator 123 is arranged in the outer column. In other words, the evaporation source group 17A is arranged at a position closer to the monitoring devices 12a to 12l than the evaporation source group 17B in such a manner that the amount of the evaporation material attached to the crystal oscillators of the monitoring devices 12a to 12f is smaller than the amount of the evaporation material attached to the crystal oscillators of the monitoring devices 12g to 12l. In addition, as Figure 4 shown, the monitoring devices 12a to 12f and the monitoring devices 12g to 12l are arranged along the crossing direction (Y direction) crossing the moving direction (X direction) of the evaporation source unit 10. In addition, the monitoring devices 12a to 12f and the monitoring devices 12g to 12l are arranged at positions outside the evaporation source group 17A in the moving direction of the evaporation source unit 10.

[0063] As described above, by considering the arrangement relationship between the evaporation source groups 17A and 17B and specifying the evaporation materials released (accommodated) by the evaporation source groups 17A and 17B respectively, the rate of the second evaporation material released from the evaporation source group 17A can be controlled with high precision. This is because the physical distance between the evaporation source group 17A that accommodates the evaporation material with a small amount of attachment to the crystal oscillator and the monitoring devices 12a to 12f is short, suppressing a significant decrease in the amount of the evaporation material attached to the crystal oscillator. In addition, it is also possible to suppress the evaporation material released from the evaporation source group 17B adjacent to the evaporation source group 17A from entering the monitoring devices 12g to 12l (crosstalk) that are not the monitoring objects.

[0064] Hereinafter, the effects of considering the arrangement relationship between the evaporation source groups 17A and 17B and specifying the evaporation materials released (accommodated) by the evaporation source groups 17A and 17B respectively, particularly the effect of suppressing crosstalk, will be described by citing specific numerical examples.

[0065] Here, either magnesium (Mg) or silver (Ag) evaporation material is contained in evaporation source group 17A and evaporation source group 17B. Attention is paid to evaporation source 11d included in evaporation source group 17A and evaporation source 11j included in evaporation source group 17B. Compared with silver (Ag), magnesium (Mg) is an evaporation substance with a small amount of deposition on the crystal oscillator. The deposition amount of the evaporation substance on the crystal oscillator is defined by the product of the film formation rate and the film density [g / cm 3 . The film density of magnesium (Mg) is 1.7 [g / cm 3 , and the film density of silver (Ag) is 10.4 [g / cm 3 . In addition, in the film formation rates respectively displayed by monitoring devices 12d and 12j, a correction value (so-called Tooling Factor) is added to the film formation rate of the actual evaporation substance. Furthermore, the physical distance between evaporation source 11d and monitoring device 12d is set to 1 [L], and the physical distance between evaporation source 11j and monitoring device 12j is set to 2 [L].

[0066] First, as a comparative example (prior art), silver (Ag) is contained in evaporation source 11d, magnesium (Mg) is contained in evaporation source 11j, Ag and Mg are simultaneously deposited on the substrate, and a mixed film of Ag and Mg (silver-magnesium (AgMg)) is formed at a film formation rate of . At this time, the actual film formation rate of magnesium (Mg) is set to The actual film formation rate of silver (Ag) is set to In this case, in monitoring device 12j, actually it is rate, but in order to form a film formation rate of , a correction value of is added. Therefore, assuming that the crosstalk component (Ag) of enters monitoring device 12j from evaporation source 11d, its influence is Therefore, the deposition amount of the crosstalk component on the crystal oscillator included in monitoring device 12j is (film formation rate) × 10.4 [g / cm 3 (film density of silver (Ag)) = 20.8.

[0067] On the other hand, as an example (the present invention), magnesium (Mg) is contained in evaporation source 11d, silver (Ag) is contained in evaporation source 11j, Ag and Mg are simultaneously deposited on the substrate, and a mixed film of Ag and Mg (silver-magnesium (AgMg)) is formed at a film formation rate of 1.0 [a / s]. At this time, the actual film formation rate of magnesium (Mg) is set to The actual film formation rate of silver (Ag) is set to In this case, in the monitoring device 12j, it is actually the rate, but in order to form the film formation rate, a correction value is added. Therefore, assuming that the crosstalk component (Mg) enters the monitoring device 12j from the evaporation source 11d, its influence is Therefore, the amount of the crosstalk component attached to the crystal oscillator included in the monitoring device 12j is

[0068] In this way, in the embodiment, as compared with the comparative example, the influence of crosstalk (the amount of the crosstalk component attached) in the monitoring device 12j is greatly reduced. Therefore, in the monitoring device 12j, a decrease in monitoring accuracy due to the entry (crosstalk) of the evaporation material from the evaporation source 11d adjacent to the evaporation source 11j is suppressed. In addition, in the embodiment, the monitoring device 12j is described, but the same applies to the monitoring devices 12g to 12i, 12k, and 12l, and it is obvious that a decrease in monitoring accuracy due to the entry of the evaporation material from the evaporation sources 11a to 11c, 11e, and 11f can also be suppressed.

[0069] In addition, as shown in the embodiment (and the comparative example), the amount of the crosstalk component attached to the monitoring devices 12g to 12l depends greatly on the film formation rate or the film density. Therefore, it is preferable that the film formation rate of the evaporation source group 17A (evaporation sources 11a to 11f) is lower than that of the evaporation source group 17B (evaporation sources 11g to 11l). Therefore, the evaporation source group 17A including the evaporation sources 11a to 11f that accommodate the evaporation material with a low film formation rate can be arranged in the outer row, that is, arranged outside the evaporation source group 17B including the evaporation sources 11g to 11l that accommodate the evaporation material with a high film formation rate. In addition, it is preferable that the film density of the evaporation material released from the evaporation source group 17A (evaporation sources 11a to 11f) and attached to the crystal oscillator is lower than the film density of the evaporation material released from the evaporation source group 17B (evaporation sources 11g to 11l) and attached to the crystal oscillator. Therefore, the evaporation source group 17A including the evaporation sources 11a to 11f that accommodate the evaporation material with a low film density can be arranged in the outer row, that is, arranged outside the evaporation source group 17B including the evaporation sources 11g to 11l that accommodate the evaporation material with a high film density.

[0070] In addition, as in the embodiment, when magnesium (Mg) is accommodated in the evaporation source group 17A (evaporation sources 11a to 11f) and silver (Ag) is accommodated in the evaporation source group 17B (evaporation sources 11g to 11l), ytterbium (Yb) is, for example, accommodated in the evaporation source group 17C (evaporation sources 11m to 11r). The evaporation source group 17C is arranged at a position outside the evaporation source group 17B and on the side opposite to the evaporation source group 17A in the moving direction (X direction) of the evaporation source unit 10. In this case, Yb released from the evaporation source group 17C is attached to the substrate independently of Ag released from the evaporation source group 17B or Mg released from the evaporation source group 17A to form a film of Yb (single evaporation coating). At this time, in the evaporation source unit 10, the operations of the shutters 161 to 163 are controlled by the control unit 43 to form a film of Yb (first layer) and a film of silver-magnesium (AgMg) (second layer) on the substrate. In addition, these evaporation materials (film-forming materials) are examples and are not limited.

[0071] In addition, the uniformity of the film thickness of the evaporation material formed on the substrate 100 is also related to the distance (interval) between two adjacent evaporation sources in the cross direction (Y direction) intersecting the moving direction (X direction) of the evaporation source unit 10. For example, for the distance between two adjacent evaporation sources in the cross direction intersecting the moving direction of the evaporation source unit 10, by making the outer side of the layout area of the plurality of evaporation sources shorter than the central side, it is possible to contribute to the uniformization of the film thickness of the film of the evaporation material formed on the substrate 100.

[0072] Specifically, if attention is paid to the evaporation sources 11a, 11b, and 11c included in the evaporation source group 17A, the distance L3 between the evaporation source 11b and the evaporation source 11a is made shorter than the distance L2 between the evaporation source 11c and the evaporation source 11b. In this way, the distances between two adjacent evaporation sources among the plurality of evaporation sources 11a to 11f in the cross direction intersecting the moving direction of the evaporation source unit 10 are made different from each other.

[0073] In addition, as described above, in the present embodiment, there is a portion where the distance between two adjacent evaporation sources in the cross direction (Y direction) intersecting the moving direction (X direction) of the evaporation source unit 10 is not constant and the interval between the two adjacent evaporation sources becomes wider. In this case, regarding the arrangement of the plurality of monitoring devices 12a to 12r, as Figure 4 shown, an arrangement with a high crosstalk suppression effect can be adopted.

[0074] Specifically, regarding the monitoring devices 12a to 12f, they are arranged such that the lines connecting the corresponding evaporation sources among the plurality of evaporation sources 11a to 11f included in the evaporation source group 17A and the monitoring devices 12a to 12f are parallel to the moving direction (X direction) of the evaporation source unit 10. Additionally, regarding the monitoring devices 12g to 12l, they are arranged such that the lines connecting the corresponding evaporation sources among the plurality of evaporation sources 11g to 11l included in the evaporation source group 17B and the monitoring devices 12g to 12l intersect the moving direction of the evaporation source unit 10. Further, the monitoring devices 12a to 12f and the monitoring devices 12g to 12l are arranged on one side in the moving direction (X direction) of the evaporation source unit 10, and in this embodiment, they are arranged on the evaporation source group 17A side. Therefore, the state of the evaporation material released from the evaporation sources 11a to 11f included in the evaporation source group 17A in the area close to the area where the monitoring devices 12a to 12l are arranged is monitored by the monitoring devices 12a to 12f at the shortest distance. Additionally, the state of the evaporation material released from the evaporation sources 11g to 11l included in the evaporation source group 17B is monitored by the monitoring devices 12g to 12l from an inclined direction. Thereby, crosstalk in the monitoring devices 12a to 12f (evaporation sources 11a to 11f) or the monitoring devices 12g to 12l can be suppressed, and a decrease in the monitoring accuracy of the monitoring devices 12a to 12l can be suppressed.

[0075] On the other hand, regarding the monitoring devices 12m to 12r, they are arranged such that the lines connecting the corresponding evaporation sources among the plurality of evaporation sources 11m to 11r included in the evaporation source group 17C (third evaporation source group) and the monitoring devices 12m to 12r are parallel to the moving direction of the evaporation source unit 10. Additionally, the monitoring devices 12m to 12r are arranged on the other side in the moving direction of the evaporation source unit 10, and in this embodiment, they are arranged on the evaporation source group 17C side. Therefore, the state of the evaporation material released from the evaporation sources 11m to 11r included in the evaporation source group 17C in the area close to the area where the monitoring devices 12m to 12r are arranged is monitored by the monitoring devices 12m to 12r at the shortest distance. Thereby, crosstalk in the monitoring devices 12m to 12r can be suppressed, and a decrease in the monitoring accuracy of the monitoring devices 12m to 12r can be suppressed.

[0076] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the claims are appended to disclose the scope of the invention.

[0077] This application claims priority based on Japanese Patent Application No. 2022-193009 filed on December 1, 2022, and incorporates all of its described content herein.

Claims

1. An evaporation source unit for depositing a film on a substrate that moves relatively in a moving direction, characterized in that: The evaporation source unit has: A first evaporation source group including a plurality of first evaporation sources, the plurality of first evaporation sources being arranged along a crossing direction crossing the moving direction, and respectively emitting a first evaporation material attached to the substrate; A second evaporation source group including a plurality of second evaporation sources, the plurality of second evaporation sources being arranged along the crossing direction, and respectively emitting a second evaporation material attached to the substrate, the second evaporation source group being arranged at a position outside the first evaporation source group in the moving direction; A first crystal monitor for monitoring the state of the first evaporation material emitted from the first evaporation source; And A second crystal monitor for monitoring the state of the second evaporation material emitted from the second evaporation source, The amount of the second evaporation material emitted from the second evaporation source and attached to the second crystal monitor is smaller than the amount of the first evaporation material emitted from the first evaporation source and attached to the first crystal monitor.

2. The evaporation source unit according to claim 1, characterized in that: The film deposition rate of the second evaporation source is lower than that of the first evaporation source.

3. The evaporation source unit according to claim 1, characterized in that: The film density of the second evaporation material emitted from the second evaporation source and attached to the second crystal monitor is lower than the film density of the first evaporation material emitted from the first evaporation source and attached to the first crystal monitor.

4. The evaporation source unit according to claim 1, characterized in that: The deposition amount is determined by the product of the film formation rate and the film density [g / cm 3 .

5. The evaporation source unit according to claim 1, characterized in that: The evaporation source unit simultaneously attaches the first evaporation material and the second evaporation material to the substrate to form a mixed film of the first evaporation material and the second evaporation material.

6. The evaporation source unit according to claim 1, characterized in that: The first crystal monitor and the second crystal monitor are arranged along a crossing direction crossing the moving direction.

7. The evaporation source unit according to claim 6, characterized in that: The first crystal monitor and the second crystal monitor are arranged at positions outside the second evaporation source group in the moving direction.

8. The evaporation source unit according to claim 7, characterized in that: The first crystal monitor is arranged in such a way that a line connecting the first crystal monitor and the first evaporation source crosses the moving direction, The second crystal monitor is arranged in such a way that a line connecting the second crystal monitor and the second evaporation source is parallel to the moving direction.

9. The evaporation source unit according to claim 6, characterized in that: The evaporation source unit further includes a third evaporation source group, which includes a plurality of third evaporation sources arranged along a crossing direction intersecting with the moving direction and respectively emitting a third evaporation material attached to the substrate. The third evaporation source group is arranged at a position outside the first evaporation source group and on the side opposite to the second evaporation source group in the moving direction. The third evaporation material is attached to the substrate independently of the first evaporation material and the second evaporation material to form a film of the third evaporation material.

10. The evaporation source unit according to claim 9, wherein: The evaporation source unit further includes a third crystal monitor for monitoring the state of the third evaporation material emitted from the third evaporation source. The third crystal monitor is arranged at a position outside the third evaporation source group in the moving direction.

11. The evaporation source unit according to claim 10, wherein: The third crystal monitor is arranged such that a line connecting the third crystal monitor and the third evaporation source is parallel to the moving direction.

12. The evaporation source unit according to claim 1, wherein: For each of the plurality of first evaporation sources and the plurality of second evaporation sources, the distances between two adjacent evaporation sources in the crossing direction are different from each other.

13. An evaporation source unit for forming a film on a substrate that relatively moves in a moving direction, wherein: The evaporation source unit includes: A first evaporation source group including a plurality of first evaporation sources arranged along a crossing direction intersecting with the moving direction and respectively emitting a first evaporation material attached to the substrate; A second evaporation source group including a plurality of second evaporation sources arranged along the crossing direction and respectively emitting a second evaporation material attached to the substrate; And A monitoring component including: a first crystal monitor for monitoring the state of the first evaporation material emitted from the first evaporation source; And a second crystal monitor for monitoring the state of the second evaporation material emitted from the second evaporation source, The second evaporation source group is arranged at a position closer to the monitoring component than the first evaporation source group such that the amount of the second evaporation material emitted from the second evaporation source and attached to the second crystal monitor is smaller than the amount of the first evaporation material emitted from the first evaporation source and attached to the first crystal monitor.

14. The evaporation source unit according to claim 13, wherein: The first crystal monitor and the second crystal monitor are arranged along a crossing direction intersecting with the moving direction.

15. The evaporation source unit according to claim 13, wherein: The second evaporation source group is arranged at a position outside the first evaporation source group in the moving direction.

16. The evaporation source unit according to claim 15, wherein: The monitoring component is arranged at a position outside the second evaporation source group in the moving direction.

17. A film forming apparatus, wherein: The film forming apparatus has the evaporation source unit described in claim 1.

18. A film forming method, characterized in that, the film forming method uses the film forming apparatus described in claim 17 to form a film on a substrate.

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