Enhanced quantum dot color conversion layer fabrication and integration for micro LED backplanes

Abstract

A pixel herein includes a color panel, a light emitting diode (LED) panel, and an adhesive layer disposed between the color panel and the LED panel. The color panel comprises a transparent layer, a plurality of sub-pixel isolation structures and a plurality of black matrix structures arranged between the sub-pixel isolation structures and the transparent layer. The sub-pixel isolation structures define a plurality of color conversion holes of a plurality of sub-pixels. A color conversion material is disposed in the color conversion hole. The plurality of black matrix structures define a plurality of color photoresist holes of the plurality of sub-pixels. The color photoresist is arranged in the color photoresist holes. The LED panel includes a plurality of micro LEDs disposed on the back plate. A plurality of micro LEDs correspond to the sub-pixels.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to LED pixels and methods of fabricating LED pixels. Specifically, the present disclosure relates to quantum dot conversion layers and methods of fabrication. Background Art

[0002] Light emitting diode (LED) panels use LED arrays, where individual LEDs provide individually controllable pixel components. Such LED panels can be used in computers, touch panel devices, personal digital assistants (PDAs), mobile phones, televisions, and the like.

[0003] Compared to OLEDs, LED panels using micron-scale LEDs based on III-V semiconductor technology (also referred to as micro-LEDs) will have various advantages, such as higher energy efficiency, brightness, and lifespan, as well as fewer material layers in the display stack, which can simplify manufacturing. However, there are challenges in fabricating micro-LED panels. For example, due to the broadband spectral emission of LEDs, the color purity of quantum dot (QD) color conversion materials is not ideal. In addition, polarizers integrated with QDs can reduce the brightness of red / green / blue (RGB) transmission. These factors may degrade the quality of the display.

[0004] Therefore, there is a need in the art for a more effective QD color conversion layer. Summary of the Invention

[0005] In one embodiment, a pixel is disclosed. The pixel includes a color panel, a light-emitting diode (LED) panel, and an adhesive material disposed between the color panel and the LED panel. The color panel includes a transparent layer, a plurality of sub-pixel isolation structures, and a plurality of black matrix structures disposed between the sub-pixel isolation structures and the transparent layer. The sub-pixel isolation structures define a plurality of color conversion holes for a plurality of sub-pixels. The color conversion holes include a first color conversion hole of a first sub-pixel, a second color conversion hole of a second sub-pixel, and a third color conversion hole of a third sub-pixel. A first color conversion material is disposed in the first color conversion hole. A second color conversion material is disposed in the second color conversion hole. A third color conversion material is disposed in the third color conversion hole. The black matrix structures define a plurality of color photoresist holes for the sub-pixels. The color photoresist holes include a first color photoresist hole of a first sub-pixel, a second color photoresist hole of a second sub-pixel, and a third color photoresist hole of a third sub-pixel. The light-emitting diode (LED) panel includes a plurality of micro-LEDs disposed on a backplane. A first micro-LED among the micro-LEDs corresponds to the first sub-pixel. A second micro-LED among the micro-LEDs corresponds to the second sub-pixel. A third micro-LED among the micro-LEDs corresponds to the third sub-pixel.

[0006] In another embodiment, a pixel is disclosed. The pixel includes a color panel and a light-emitting diode (LED) panel. The color panel includes a color photoresist transparent layer, a color conversion transparent layer, a plurality of sub-pixel isolation structures, a first adhesive material disposed between the color conversion transparent layer and the color photoresist transparent layer, and a plurality of black matrix structures disposed between the transparent layer and the sub-pixel isolation structures. The sub-pixel isolation structures define a plurality of color conversion holes for a plurality of sub-pixels. The color conversion holes include a first color conversion hole of a first sub-pixel, a second color conversion hole of a second sub-pixel, and a third color conversion hole of a third sub-pixel. A first color conversion material is disposed in the first color conversion hole. A second color conversion material is disposed in the second color conversion hole. A third color conversion material is disposed in the third color conversion hole. The black matrix structures define a plurality of color photoresist holes for the sub-pixels. The color photoresist holes include a first color photoresist hole of a first sub-pixel, a second color photoresist hole of a second sub-pixel, and a third color photoresist hole of a third sub-pixel. The light-emitting diode (LED) panel includes a plurality of micro-LEDs disposed on a backplane. A first micro-LED among the micro-LEDs corresponds to the first sub-pixel, a second micro-LED among the micro-LEDs corresponds to the second sub-pixel, and a third micro-LED among the micro-LEDs corresponds to the third sub-pixel. A second adhesive material is disposed between the LED panel and the color panel.

[0007] In another embodiment, a method of manufacturing a micro-LED component is disclosed. The method includes patterning a plurality of black matrix structures on a transparent layer; disposing a color photoresist in a plurality of color photoresist holes defined by the black matrix structures; disposing an isolation structure layer on the black matrix structures and the color photoresist holes; patterning the isolation structure layer to form a plurality of sub-pixel isolation structures; disposing a color conversion material in a plurality of color conversion holes to form a color panel, wherein the color conversion holes are defined by the sub-pixel isolation structures; and bonding the color panel to a light-emitting diode (LED) panel, the LED panel including the micro-LEDs disposed on a backplane. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] To understand the above features of the present disclosure in detail, reference may be made to the embodiments for a more specific description of the present disclosure briefly outlined above, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings only show exemplary embodiments and should not be considered as limiting its scope, and other equally effective embodiments are allowed.

[0009] Figure 1 A schematic cross-sectional view of a pixel having a first arrangement according to an embodiment is shown.

[0010] Figure 2 A flowchart of a first method of forming a pixel having a first arrangement according to an embodiment is shown.

[0011] Figures 3A to 3M A schematic cross-sectional view of a pixel during a method of forming a pixel having a first arrangement according to an embodiment is shown.

[0012] Figure 4 A flowchart of a second method of forming a pixel having a first arrangement according to an embodiment is shown.

[0013] Figures 5A to 5H A schematic cross-sectional view of a pixel during method 400 according to an embodiment is shown.

[0014] Figure 6A A schematic cross-sectional view of a pixel having a second arrangement according to an embodiment is shown.

[0015] Figure 6B A schematic cross-sectional view of a pixel having a third arrangement according to an embodiment is shown.

[0016] Figure 7 A flowchart of a first method of forming a pixel having a second arrangement according to an embodiment is shown.

[0017] Figures 8A to 8N A schematic cross-sectional view of a pixel during a first method of forming a pixel having a second arrangement according to an embodiment is shown.

[0018] Figure 9 Shows a flowchart of a second method of forming a pixel having a second arrangement according to an embodiment.

[0019] Figures 10A to 10I Shows a schematic cross-sectional view of a pixel during a second method of forming a pixel having a second arrangement according to an embodiment.

[0020] Figure 11A Shows a schematic cross-sectional view of a pixel having a fourth arrangement according to an embodiment.

[0021] Figure 11B Shows a schematic cross-sectional view of a pixel having a fifth arrangement according to an embodiment.

[0022] Figure 12 Shows a flowchart of a method of forming a pixel having a fourth arrangement according to an embodiment.

[0023] Figures 13A to 13G Shows a schematic cross-sectional view of a pixel during a method of forming a pixel having a fourth arrangement according to an embodiment.

[0024] For ease of understanding, where possible, the same component symbols are used to denote the same components common to the drawings. It is contemplated that the components and features of one embodiment may be advantageously incorporated in other embodiments without further elaboration. Detailed Description

[0025] Embodiments of the present disclosure generally relate to LED pixels and methods of manufacturing LED pixels. Specifically, the present disclosure relates to quantum dot conversion layers and manufacturing methods.

[0026] Figure 1 Shows a schematic cross-sectional view of a pixel 100 having a first arrangement 101. The pixel 100 includes an LED panel 103 and a color panel 105. The LED panel 103 includes a plurality of micro LEDs 104 disposed on a backplane 102. The micro LEDs 104 are integrated with the backplane circuitry such that each micro LED 104 can be individually addressed. For example, the circuitry of the backplane 102 may include a TFT active matrix array having thin film transistors and storage capacitors, row address lines, and column address lines for each micro LED 104, as well as a row driver and a column driver to drive the micro LEDs 104. Alternatively, the micro LEDs 104 may be driven by a passive matrix in the backplane circuitry. The backplane 102 can be fabricated using conventional CMOS processes.

[0027] The adhesive material 106 can be disposed between the LED panel 103 and the color panel 105. The adhesive material 106 can also be disposed between the micro LEDs 104. The adhesive material 106 bonds the LED panel 103 to the color panel 105. The adhesive material 106 is disposed on the micro LEDs 104 and, in some embodiments, directly on the micro LEDs 104. The adhesive material 106 includes an epoxy resin, an acrylic, or a urethane-based transparent adhesive, or a combination thereof.

[0028] The color panel 105 includes a transparent layer 107, a plurality of sub-pixel isolation (SI) structures 110, a cover layer 120, and a plurality of black matrix structures 109. The cover layer can include indium-tin oxide (ITO), silicon dioxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), hafnium oxide (HfO2), tantalum pentoxide (Ta2O5), or a combination thereof. Adjacent sub-pixel isolation structures 110 define respective color conversion holes 113 for a plurality of sub-pixels 112. A color conversion material is disposed in the color conversion holes 113. The color conversion material includes a cadmium material, a zinc material, or an indium phosphide material or a combination thereof. A first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, a second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and a third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C. In some embodiments, the first sub-pixel 112A is a red sub-pixel and the first color conversion material 113A is a red conversion material. In some embodiments, the second sub-pixel 112B is a green sub-pixel and the second color conversion material 113B is a green conversion material. In some embodiments, the third sub-pixel 112C is a blue sub-pixel and the third color conversion material 113C is a blue conversion material.

[0029] When the micro-LED 104A of the red sub-pixel (e.g., the first sub-pixel 112A) is turned on, the red conversion material (e.g., the first color conversion material 113A) converts the light emitted from the micro-LED 104A into red light. When the micro-LED 104B of the green sub-pixel (e.g., the second sub-pixel 112B) is turned on, the green conversion material (e.g., the second color conversion material 113B) converts the light emitted from the micro-LED 104B into green light. When the micro-LED 104C of the blue sub-pixel (e.g., the third sub-pixel 112C) is turned on, the blue conversion material (e.g., the third color conversion material 113C) converts the light emitted from the micro-LED 104C into blue light. In one embodiment, the pixel 100 includes a fourth sub-pixel. In some embodiments, the fourth sub-pixel does not include a color conversion material, i.e., there is no color conversion layer. In other embodiments, the fourth sub-pixel includes a sacrificial material. In other embodiments, at least three sub-pixels 112 include the same color conversion material. The fourth sub-pixel can be filled with a color conversion material later.

[0030] The sub-pixel isolation structure 110 includes a photoresist material, such as an epoxy-based photoresist. The photoresist material can be a negative photoresist. The photoresist can be a black polymer structure, where the black polymer is opaque to UV light and visible light (e.g., the black polymer has a high optical density or a white (e.g., light-reflecting) polymer structure). The sub-pixel isolation structure 110 can have a width 130 of about 2 μm to about 20 μm. The sub-pixel isolation structure 110 can have a pitch 140 of about 10 μm to about 200 μm. The sub-pixel isolation structure 110 can have a height 150 of about 2 μm to about 30 μm, such as 5 μm to 15 μm. A coating material 118 is provided on the sidewalls and the top surface of the sub-pixel isolation structure 110. The coating material 118 on the sub-pixel isolation structure 110 can provide reflection of the emitted light to contain the converted light reaching the respective sub-pixels, thereby aligning the light to the display. In some embodiments, the coating material 118 is a metal layer. The metal layer includes but is not limited to aluminum, silver, combinations thereof, or the like. In some embodiments, the coating material 118 can include a metal layer and a dielectric layer. The dielectric layer can include silicon nitride (SiN x ) material. The thickness of the metal layer is 100 nm to about 500 nm, and the thickness of the dielectric layer is about 100 nm to about 500 nm. In some embodiments, the coating can be an absorbing material. In other embodiments, the sub-pixel isolation structure 110 can have an inherent reflective property.

[0031] The black matrix structure 109 defines the respective color photoresist holes 115 of these sub-pixels 112. The first color photoresist 115A is disposed in the hole 115 of the first sub-pixel 112A, the second color photoresist 115B is disposed in the hole 115 of the second sub-pixel 112B, and the third color photoresist 115C is disposed in the hole 115 of the third sub-pixel 112C. In some embodiments, the first color photoresist 115A is a red photoresist, the second color photoresist 115B is a green photoresist, and the third color photoresist 115C is a blue photoresist. The color photoresist is patterned by UV light. The color photoresist can be used as a color filter to improve the display color quality.

[0032] The black matrix structure 109 includes a black matrix material or a black photoresist material. The black matrix structure 109 can have a width 135 of about 2 μm to about 20 μm. The black matrix structure 109 can have a pitch 145 of about 2 μm to about 6 μm. The black matrix structure 109 can have a height 155 of about 1 μm to about 3 μm. The black matrix structure 109 reduces or eliminates the need for a polarizer in the pixel 100. The black matrix structure 109 can reduce the thickness of the pixel 100. In addition, the black matrix structure 109 reduces the reflection of the pixel 100 and improves the brightness of the pixel 100.

[0033] The cover layer 120 is disposed between the black matrix structure 109 and the sub-pixel isolation structure 110. The cover layer 120 is disposed on the sub-pixel isolation structure 110 and the color photoresist holes 115. The cover layer 120 isolates the color conversion holes 113 from the color photoresist holes 115. In the case where the color conversion holes 113 and the color photoresist holes 115 are incompatible, the cover layer prevents adverse reactions between the color conversion holes 113 and the color photoresist holes 115 by isolating the color conversion holes 113 from the color photoresist holes 115. The cover layer 120 has a thickness of about 100 nm to about 1 μm.

[0034] The transparent layer 107 is disposed on the black matrix structure 109 and the color photoresist holes 115. The transparent layer 107 includes a glass material, a polymethyl methacrylate (PMMA) material, or a combination thereof. The structure of the pixel 100 with the first arrangement 101 improves the color gamut, contrast, and uniformity of the pixel 100 while reducing or eliminating top-down crosstalk.

[0035] Figure 2 A flowchart of a first method 200 of forming a pixel 100 having a first arrangement 101 is shown. Figures 3A to 3M A schematic cross-sectional view of the pixel 100 during the first method 200 of forming a pixel 100 having a first arrangement 101 is shown.

[0036] In operation 201, as Figure 3AAs shown, these black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 can be patterned by a lithography process. The black matrix structures 109 define a plurality of color photoresist holes 115 of the sub-pixels 112, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C.

[0037] In operation 202, as shown in FIG. 3B, a first color photoresist material layer 215A is disposed in these color photoresist holes 115. The first color photoresist material layer 215A is disposed in these color photoresist holes 115 of the sub-pixels 112, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C. The first color photoresist material layer 215A can be disposed in these color photoresist holes 115 by a spin coating process.

[0038] In operation 203, as shown in FIG. 3C, the first color photoresist material layer 215A is patterned to form a first color photoresist 115A in the color photoresist holes 115 of the first sub-pixel 112A. The first color photoresist material layer 215A is patterned using a capillary force (CF) lithography process. The CF lithography process removes the first color photoresist material layer 215A from the color photoresist holes 115 of the second sub-pixel 112B and the color photoresist holes 115 of the third sub-pixel 112C.

[0039] In operation 204, as shown in FIG. 3D, a second color photoresist material layer 215B is disposed in these color photoresist holes 115. The second color photoresist material layer 215B is disposed in these color photoresist holes 115, such as the color photoresist holes 115 of the second sub-pixel 112B and the color photoresist holes 115 of the third sub-pixel 112C. In some embodiments, since the first color photoresist 115A is disposed in the color photoresist holes 115 of the first sub-pixel 112A, the second color photoresist material layer 215B is not disposed in the color photoresist holes 115 of the first sub-pixel 112A. The second color photoresist material layer 215B can be disposed in these color photoresist holes 115 by a spin coating process.

[0040] In operation 205, as shown in FIG. 3E, the second color photoresist material layer 215B is patterned to form a second color photoresist 115B in the color photoresist holes 115 of the second sub-pixel 112B. The second color photoresist material layer 215B is patterned using a capillary force (CF) lithography process. The CF lithography process removes the second color photoresist material layer 215B from the color photoresist holes 115 of the third sub-pixel 112C.

[0041] In operation 206, as shown in FIG. 3F, a third color photoresist material layer 215C is disposed in these color photoresist holes 115. The third color photoresist material layer 215C is disposed in these color photoresist holes 115, such as the color photoresist holes 115 of the third sub-pixel 112C. In some embodiments, since the first color photoresist 115A is disposed in the color photoresist holes 115 of the first sub-pixel 112A and the second color photoresist 115B is disposed in the color photoresist holes 115 of the second sub-pixel 112B, the third color photoresist material layer 215C is not disposed in the color photoresist holes 115 of the first sub-pixel 112A or the color photoresist holes 115 of the second sub-pixel 112B. The third color photoresist material layer 215C can be disposed in these color photoresist holes 115 by a spin coating process.

[0042] In operation 207, as shown in FIG. 3G, the third color photoresist material layer 215C is patterned to form a third color photoresist 115C in the color photoresist holes 115 of the third sub-pixel 112C. The third color photoresist material layer 215C is patterned using a capillary force (CF) lithography process.

[0043] In operation 208, as shown in FIG. 3H, a cover layer is disposed on the black matrix structure 109 and the color photoresists (e.g., the first color photoresist 115A, the second color photoresist 115B, and the third color photoresist 115C). The cover layer 120 is disposed on the black matrix structure 109 and the color photoresists using a physical vapor deposition (PVD) process, a chemical vapor deposition process, or other deposition processes.

[0044] In operation 209, as shown in FIG. 3I, a sub-pixel isolation structure layer 310 is disposed on the cover layer 120. A spin coating process is used to dispose the sub-pixel isolation structure layer 310.

[0045] In operation 210, as shown in FIG. 3J, the sub-pixel isolation structure layer 310 is patterned to form these sub-pixel isolation structures 110. The sub-pixel isolation structures 110 define these color conversion holes 113.

[0046] In operation 211, as shown in FIG. 3K, a coating material 118 is disposed on the sub-pixel isolation structures 110. The coating material 118 can include a metal layer and a dielectric layer. The metal layer can be deposited using a physical vapor deposition (PVD) process. The dielectric layer can be deposited using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process. The coating material 118 covers the top wall and side walls of the sub-pixel isolation structures 110.

[0047] In operation 212, as shown in Figure 3L, the color conversion material is disposed in the color conversion holes 113 to form the color panel 105. The first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, the second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and the third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C.

[0048] In operation 213, as Figure 3M shown, the color panel 105 is bonded to the LED panel 103. The adhesive material 106 bonds the color panel 105 to the LED panel 103. The LED panel 103 includes a backplane 102 and a plurality of micro LEDs 104 disposed on the backplane 102. These micro LEDs 104 may include a first micro LED 104A corresponding to the first sub-pixel 112A, a second micro LED 104B corresponding to the second sub-pixel 112B, and a third micro LED 104C corresponding to the third sub-pixel 112C.

[0049] Figure 4 A flowchart showing a second method 300 of forming a pixel 100 having a first arrangement 101 is shown. Figures 5A to 5H A schematic cross-sectional view of the pixel 100 during the second method 300 of forming a pixel 100 having a first arrangement 101 is shown.

[0050] In operation 401, as Figure 5A shown, these black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 can be patterned by a photolithography process. The black matrix structures 109 define a plurality of color photoresist holes 115 of the sub-pixels 112, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C.

[0051] In operation 402, as shown in Figure 5B, color photoresist is disposed in these color photoresist holes 115. The first color photoresist 115A is disposed in the color photoresist hole 115 of the first sub-pixel 112A, the second color photoresist 115B is disposed in the color photoresist hole 115B of the second sub-pixel 112B, and the third color photoresist 115C is disposed in the color photoresist hole 115 of the third sub-pixel 112C. The color photoresist is disposed in these color photoresist holes 115 using an inkjet printing process.

[0052] In operation 403, as shown in FIG. 5C, a cover layer is disposed on the black matrix structure 109 and the color photoresists (e.g., the first color photoresist 115A, the second color photoresist 115B, and the third color photoresist 115C). The cover layer 120 is disposed on the black matrix structure 109 and the color photoresists using a physical vapor deposition (PVD) process, a chemical vapor deposition process, or other deposition processes.

[0053] In operation 404, as shown in FIG. 5D, the sub-pixel isolation structure layer 310 is disposed on the cover layer 120. The sub-pixel isolation structure layer 310 is disposed using a spin coating process.

[0054] In operation 405, as shown in FIG. 5E, the sub-pixel isolation structure layer 310 is patterned to form the sub-pixel isolation structures 110. The sub-pixel isolation structures 110 define the color conversion holes 113.

[0055] In operation 406, as shown in FIG. 5F, a coating material 118 is disposed on the sub-pixel isolation structures 110. The coating material 118 may include a metal layer and a dielectric layer. The metal layer may be deposited using a physical vapor deposition (PVD) process. The dielectric layer may be deposited using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process. The coating material 118 covers the top and side walls of the sub-pixel isolation structures 110.

[0056] In operation 407, as shown in FIG. 5G, color conversion materials are disposed in the color conversion holes 113 to form the color panel 105. The first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, the second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and the third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C.

[0057] In operation 408, as Figure 5H shown, the color panel 105 is bonded to the LED panel 103. An adhesive material 106 bonds the color panel 105 to the LED panel 103. The LED panel 103 includes a backplane 102 and these micro-LEDs 104 disposed on the backplane 102. These micro-LEDs 104 may include a first micro-LED 104A corresponding to the first sub-pixel 112A, a second micro-LED 104B corresponding to the second sub-pixel 112B, and a third micro-LED 104C corresponding to the third sub-pixel 112C.

[0058] Figure 6A A schematic cross-sectional view of a pixel 600 having a second arrangement 600A is shown. Figure 6B A schematic cross-sectional view of a pixel 600 having a third arrangement 600B is shown.

[0059] The pixel 600 includes an LED panel 103 and a color panel 605. The LED panel includes these micro-LEDs 104 disposed on a backplane 102. The micro-LEDs 104 are integrated with the backplane circuitry such that each micro-LED 104 can be individually addressed. For example, the circuitry of the backplane 102 may include a TFT active matrix array having thin film transistors and storage capacitors, row address lines, and column address lines for each micro-LED 104, as well as a row driver and a column driver to drive the micro-LEDs 104. Alternatively, the micro-LEDs 104 may be driven by a passive matrix in the backplane circuitry. The backplane 102 can be fabricated using a conventional CMOS process.

[0060] An adhesive material 106 may be disposed between the LED panel 103 and the color panel 605. The adhesive material 106 may also be disposed between the micro-LEDs 104. The adhesive material 106 bonds the LED panel 103 to the color panel 105. The adhesive material 106 is disposed on the micro-LEDs 104 and, in some embodiments, directly on the micro-LEDs 104. The adhesive material 106 includes an epoxy resin, an acrylic, or a urethane-based transparent adhesive, or a combination thereof.

[0061] The color panel 605 includes a transparent layer 107, these sub-pixel isolation (SI) structures 110, a cover layer, an ultraviolet (UV) blocking layer 624, and these black matrix structures 109. Adjacent sub-pixel isolation structures 110 define respective color conversion holes 113 for these sub-pixels 112. A color conversion material is disposed in the color conversion holes 113. The color conversion material includes a cadmium material, a zinc material, or an indium phosphide material, or a combination thereof. A first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, a second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and a third sub-pixel 112C having a third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C. In some embodiments, the first sub-pixel 112A is a red sub-pixel and the first color conversion material 113A is a red conversion material. In some embodiments, the second sub-pixel 112B is a green sub-pixel and the second color conversion material 113B is a green conversion material. In some embodiments, the third sub-pixel 112C is a blue sub-pixel and the third color conversion material 113C is a blue conversion material.

[0062] When the micro-LED 104A of the first sub-pixel 112A is turned on, the red conversion material (e.g., the first color conversion material 113A) converts the light emitted from the micro-LED 104A into red light. When the micro-LED 104B of the second sub-pixel 112B is turned on, the green conversion material (e.g., the second color conversion material 113B) converts the light emitted from the micro-LED 104B into green light. When the micro-LED 104C of the blue sub-pixel (e.g., the third sub-pixel 112C) is turned on, the blue conversion material (e.g., the third color conversion material 113C) converts the light emitted from the micro-LED 104C into blue light. In one embodiment, the pixel 600 includes a fourth sub-pixel. In some embodiments, the fourth sub-pixel does not include a color conversion material, i.e., there is no color conversion layer. In other embodiments, the fourth sub-pixel includes a sacrificial material. In other embodiments, at least three sub-pixels 112 include the same color conversion material. The fourth sub-pixel can be filled with a color conversion material at a later time.

[0063] The sub-pixel isolation structure 110 includes a photoresist material, such as an epoxy-based photoresist. The photoresist material can be a negative photoresist. The photoresist can be a black polymer structure, where the black polymer is opaque to UV light and visible light (e.g., the black polymer has a high optical density or a white (e.g., light-reflecting) polymer structure. The sub-pixel isolation structure 110 can have a width 130 of about 2 μm to about 20 μm. The sub-pixel isolation structure 110 can have a pitch 140 of about 10 μm to about 200 μm. The sub-pixel isolation structure 110 can have a height 150 of about 2 μm to about 30 μm, such as 5 μm to 15 μm. A coating material 118 is disposed on the sidewalls and the top surface of the sub-pixel isolation structure 110. The coating material 118 on the sub-pixel isolation structure 110 can provide reflection of the emitted light to contain the converted light reaching the respective sub-pixels, thereby aligning the light to the display. In some embodiments, the coating material 118 is a metal layer. The metal layer includes but is not limited to aluminum, silver, combinations thereof, or the like. In some embodiments, the coating material 118 can include a metal layer and a dielectric layer. The dielectric layer can include silicon nitride (SiN x ) material. The thickness of the metal layer is 100 nm to about 500 nm, and the thickness of the dielectric layer is about 100 nm to about 500 nm. In some embodiments, the coating can be an absorbing material. In other embodiments, the sub-pixel isolation structure 110 can have an inherent reflective property.

[0064] The black matrix structure 109 defines respective color photoresist holes 115 for these sub-pixels 112. The first color photoresist 115A is disposed in the hole 115 of the first sub-pixel 112A, the second color photoresist 115B is disposed in the hole 115 of the second sub-pixel 112B, and the third color photoresist 115C is disposed in the hole 115 of the third sub-pixel 112C. In some embodiments, the first color photoresist 115A is a red photoresist, the second color photoresist 115B is a green photoresist, and the third color photoresist 115C is a blue photoresist. The color photoresists are patterned by UV light. The color photoresists can be used as color filters to improve the display color quality.

[0065] The black matrix structure 109 includes a black matrix material or a black photoresist material. The black matrix structure 109 can have a width 135 of about 2 μm to about 20 μm. The black matrix structure 109 can have a pitch 145 of about 10 μm to about 200 μm. The black matrix structure 109 can have a height 155 of about 1 μm to about 3 μm. The black matrix structure 109 reduces or eliminates the need for a polarizer in the pixel 600. The black matrix structure 109 can reduce the thickness of the pixel 600. In addition, the black matrix structure 109 reduces the reflection of the pixel 600 and improves the brightness of the pixel 600.

[0066] In one embodiment, as Figure 6A shown, the cover layer 120 and the UV blocking layer 624 are disposed between the black matrix structure 109 and the sub-pixel isolation structure 110. The UV blocking layer 624 is disposed on the sub-pixel isolation structure 110. The cover layer 120 is disposed on the UV blocking layer 624. The black matrix structure 109 is disposed on the cover layer 120.

[0067] In another embodiment, as Figure 6B shown, the cover layer 120 is disposed between the black matrix structure 109 and the sub-pixel isolation structure 110. The cover layer 120 is disposed on the sub-pixel isolation structure 110. The UV blocking layer 624 is disposed between the black matrix structure 109 and the transparent layer 107. The UV blocking layer 624 is disposed on the black matrix structure 109.

[0068] The cover layer 120 is disposed on the sub-pixel isolation structure 110 and the color photoresist holes 115. The cover layer 120 isolates the color conversion holes 113 from the color photoresist holes 115. The cover layer 120 has a thickness of about 100 nm to about 1 μm. The UV blocking layer 624 has a thickness of about 100 nm to about 1 μm.

[0069] The transparent layer 107 is disposed on the black matrix structure 109 and the color photoresist holes 115. The transparent layer 107 includes a glass material, a polymethyl methacrylate (PMMA) material, or a combination thereof. The structure of the pixel 600 having the second arrangement 601A and the third arrangement 601B improves the color gamut, contrast, and uniformity of the pixel 600 while reducing or eliminating top-down crosstalk.

[0070] Figure 7 A flowchart of a first method 700 of forming a pixel 600 having a second arrangement 601A is shown. Figures 8A to 8N A schematic cross-sectional view of the pixel 600 during the first method 700 of forming a pixel 600 having a second arrangement 600A is shown.

[0071] In operation 701, as Figure 8A shown, the black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 can be patterned by a lithography process. The black matrix structures 109 define the color photoresist holes 115 of the sub-pixels 112, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C.

[0072] In operation 702, as shown in FIG. 8B, a first color photoresist material layer 215A is disposed in the color photoresist holes 115. The first color photoresist material layer 215A is disposed in the color photoresist holes 115, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C. The first color photoresist material layer 215A can be disposed in the color photoresist holes 115 by a spin coating process.

[0073] In operation 703, as shown in FIG. 8C, the first color photoresist material layer 215A is patterned to form a first color photoresist 115A in the color photoresist hole 115 of the first sub-pixel 112A. The first color photoresist material layer 215A is patterned using a capillary force (CF) lithography process. The CF lithography process removes the first color photoresist material layer 215A from the color photoresist holes 115 of the second sub-pixel 112B and the color photoresist holes 115 of the third sub-pixel 112C.

[0074] At operation 704, as shown in FIG. 8D, a second color photoresist material layer 215B is disposed in these color photoresist holes 115. The second color photoresist material layer 215B is disposed in these color photoresist holes 115, such as the color photoresist holes 115 of the second sub-pixel 112B and the color photoresist holes 115 of the third sub-pixel 112C. In some embodiments, since the first color photoresist 115A is disposed in the color photoresist holes 115 of the first sub-pixel 112A, the second color photoresist material layer 215B is not disposed in the color photoresist holes 115 of the first sub-pixel 112A. The second color photoresist material layer 215B can be disposed in these color photoresist holes 115 by a spin coating process.

[0075] At operation 705, as shown in FIG. 8E, the second color photoresist material layer 215B is patterned to form a second color photoresist 115B in the color photoresist holes 115 of the second sub-pixel 112B. The second color photoresist material layer 215B is patterned using a capillary force (CF) lithography process. The CF lithography process removes the second color photoresist material layer 215B from the color photoresist holes 115 of the third sub-pixel 112C.

[0076] At operation 706, as shown in FIG. 8F, a third color photoresist material layer 215C is disposed in these color photoresist holes 115. The third color photoresist material layer 215C is disposed in these color photoresist holes 115, such as in the color photoresist holes 115 of the third sub-pixel 112C. In some embodiments, since the first color photoresist 115A is disposed in the color photoresist holes 115 of the first sub-pixel 112A and the second color photoresist 115B is disposed in the color photoresist holes 115 of the second sub-pixel 112B, the third color photoresist material layer 215C is not disposed in the color photoresist holes 115 of the first sub-pixel 112A or the color photoresist holes 115 of the second sub-pixel 112B. The third color photoresist material layer 215C can be disposed in these color photoresist holes 115 by a spin coating process.

[0077] At operation 707, as shown in FIG. 8G, the third color photoresist material layer 215C is patterned to form a third color photoresist 115C in the color photoresist holes 115 of the third sub-pixel 112C. The third color photoresist material layer 215C is patterned using a capillary force (CF) lithography process.

[0078] At operation 708, as shown in FIG. 8H, a cover layer is disposed on the black matrix structure 109 and the color photoresists (e.g., the first color photoresist 115A, the second color photoresist 115B, and the third color photoresist 115C). The cover layer 120 is disposed on the black matrix structure 109 and the color photoresists using a physical vapor deposition (PVD) process, a chemical vapor deposition process, or other deposition processes.

[0079] In operation 709, as shown in FIG. 8I, an ultraviolet (UV) blocking layer 624 is disposed on the cover layer 120. The UV blocking layer is disposed using a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or a spin coating process.

[0080] In operation 710, as shown in FIG. 8J, a sub-pixel isolation structure layer 310 is disposed on the cover layer 120. The sub-pixel isolation structure layer 310 is disposed using a spin coating process.

[0081] In operation 711, as shown in FIG. 8K, the sub-pixel isolation structure layer 310 is patterned to form the sub-pixel isolation structures 110 and the color conversion holes 113. The sub-pixel isolation structures 110 define the color conversion holes 113.

[0082] In operation 712, as shown in FIG. 8L, a coating material 118 is disposed on the sub-pixel isolation structures 110. The coating material 118 may include a metal layer and a dielectric layer. The metal layer may be deposited using a physical vapor deposition (PVD) process. The dielectric layer may be deposited using a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. The coating material 118 covers the top and side walls of the sub-pixel isolation structures 110.

[0083] In operation 713, as shown in FIG. 8M, a color conversion material is disposed in the color conversion holes 113 to form a color panel 605. A first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, a second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and a third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C.

[0084] In operation 714, as Figure 8N shown, the color panel 605 is bonded to the LED panel 103. An adhesive material 106 bonds the color panel 605 to the LED panel 103. The LED panel 103 includes a backplane 102 and the micro-LEDs 104 disposed on the backplane 102. The micro-LEDs 104 may include a first micro-LED 104A corresponding to the first sub-pixel 112A, a second micro-LED 104B corresponding to the second sub-pixel 112B, and a third micro-LED 104C corresponding to the third sub-pixel 112C.

[0085] Figure 9 A flowchart of a second method 900 of forming a pixel 600 having a second arrangement 601A is shown. Figures 10A to 10I A schematic cross-sectional view of a pixel 600 during the second method 900 of forming a pixel 600 having a second arrangement 601A is shown.

[0086] In operation 901, as Figure 10A shown, these black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 can be patterned by a photolithography process. The black matrix structures 109 define these color photoresist holes 115 of the sub-pixels 112, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C.

[0087] In operation 902, as Figure 10B shown, color photoresist is disposed in these color photoresist holes 115. The first color photoresist 115A is disposed in the color photoresist hole 115 of the first sub-pixel 112A, the second color photoresist 115B is disposed in the color photoresist hole 115B of the second sub-pixel 112B, and the third color photoresist 115C is disposed in the color photoresist hole 115 of the third sub-pixel 112C. An inkjet printing process is used to dispose the color photoresist.

[0088] In operation 903, as Figure 10C shown, a cover layer is disposed on the black matrix structures 109 and the color photoresist (e.g., the first color photoresist 115A, the second color photoresist 115B, and the third color photoresist 115C). The cover layer 120 is disposed on the black matrix structures 109 and the color photoresist using a physical vapor deposition (PVD) process, a chemical vapor deposition process, or other deposition processes.

[0089] In operation 904, as Figure 10D shown, an ultraviolet (UV) blocking layer 624 is disposed on the cover layer 120. The UV blocking layer is disposed using a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or a spin coating process.

[0090] In operation 905, as Figure 10E shown, a sub-pixel isolation structure layer 310 is disposed on the cover layer 120. The sub-pixel isolation structure layer 310 is disposed using a spin coating process.

[0091] In operation 906, as Figure 10F shown, the sub-pixel isolation structure layer 310 is patterned to form these sub-pixel isolation structures 110. The sub-pixel isolation structures 110 define these color conversion holes 113.

[0092] In operation 907, as Figure 10GAs shown, a coating material 118 is disposed on the sub-pixel isolation structure 110. The coating material 118 may include a metal layer and a dielectric layer. A physical vapor deposition (PVD) process may be used to deposit the metal layer. A chemical vapor deposition (CVD) or atomic layer deposition (ALD) process may be used to deposit the dielectric layer. The coating material 118 covers the top wall and side walls of the sub-pixel isolation structure 110.

[0093] In operation 908, as Figure 10H shown, a color conversion material is disposed in the color conversion holes 113 to form a color panel 605. A first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, a second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and a third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C.

[0094] In operation 909, as Figure 10I shown, the color panel 605 is bonded to the LED panel 103. An adhesive material 106 bonds the color panel 605 to the LED panel 103. The LED panel 103 includes a backplane 102 and these micro-LEDs 104 disposed on the backplane 102. These micro-LEDs 104 may include a first micro-LED 104A corresponding to the first sub-pixel 112A, a second micro-LED 104B corresponding to the second sub-pixel 112B, and a third micro-LED 104C corresponding to the third sub-pixel 112C.

[0095] Figure 11A A schematic cross-sectional view of a pixel 1100 having a fourth arrangement 1101A is shown. Figure 11B A schematic cross-sectional view of a pixel 1100 having a fifth arrangement 1101B is shown.

[0096] The pixel 1100 includes an LED panel 103 and a color panel 1105. The LED panel includes these micro-LEDs 104 disposed on the backplane 102. The micro-LEDs 104 are integrated with the backplane circuitry such that each micro-LED 104 can be individually addressed. For example, the circuitry of the backplane 102 may include a TFT active matrix array having thin film transistors and storage capacitors, row address lines, and column address lines for each micro-LED 104, as well as a row driver and a column driver to drive the micro-LEDs 104. Alternatively, the micro-LEDs 104 may be driven by a passive matrix in the backplane circuitry. The backplane 102 may be fabricated using a conventional CMOS process.

[0097] The second adhesive material 1106B can be disposed between the LED panel 103 and the color panel 1105. The second adhesive material 1106B can also be disposed between the micro-LEDs 104. The second adhesive material 1106B is disposed on the micro-LEDs 104 and, in some embodiments, directly on the micro-LEDs 104. The second adhesive material 1106B bonds the LED panel 103 to the color panel 1105. The second adhesive material 1106B includes an epoxy-based, acrylic-based, or urethane-based transparent adhesive, or a combination thereof.

[0098] The color panel 1105 includes a color photoresist transparent layer 1107A, a color conversion transparent layer 1107B, a first adhesive material 1106A, these sub-pixel isolation (SI) structures 110, a cover layer, an ultraviolet (UV) blocking layer 1124, and these black matrix structures 109. Adjacent sub-pixel isolation structures 110 define respective color conversion holes 113 of these sub-pixels 112. A color conversion material is disposed in the color conversion holes 113. The color conversion material includes a cadmium material, a zinc material, or an indium phosphide material, or a combination thereof. A first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, a second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and a third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C. In some embodiments, the first sub-pixel 112A is a red sub-pixel, and the first color conversion material 113A is a red conversion material. In some embodiments, the second sub-pixel 112B is a green sub-pixel, and the second color conversion material 113B is a green conversion material. In some embodiments, the third sub-pixel 112C is a blue sub-pixel, and the third color conversion material 113C is a blue conversion material.

[0099] When the micro-LED 104A of the first sub-pixel 112A is turned on, the red conversion material (e.g., the first color conversion material 113A) converts the light emitted from the micro-LED 104A into red light. When the micro-LED 104B of the second sub-pixel 112B is turned on, the green conversion material (e.g., the second color conversion material 113B) converts the light emitted from the micro-LED 104B into green light. When the micro-LED 104C of the blue sub-pixel (e.g., the third sub-pixel 112C) is turned on, the blue conversion material (e.g., the third color conversion material 113C) converts the light emitted from the micro-LED 104C into blue light. In one embodiment, the pixel 1100 includes a fourth sub-pixel. In some embodiments, the fourth sub-pixel does not include a color conversion material, i.e., there is no color conversion layer. In other embodiments, the fourth sub-pixel includes a sacrificial material. In other embodiments, at least three sub-pixels 112 include the same color conversion material. The fourth sub-pixel can be filled with a color conversion material at a later time.

[0100] The sub-pixel isolation structure 110 includes a photoresist material, such as epoxy-based photoresist. The photoresist material can be a negative photoresist. The photoresist can be a black polymer structure, where the black polymer is opaque to UV light and visible light (e.g., the black polymer has a high optical density) or a white (e.g., light-reflecting) polymer structure. The sub-pixel isolation structure 110 can have a width 130 of about 2 μm to about 20 μm. The sub-pixel isolation structure 110 can have a pitch 140 of about 10 μm to about 200 μm. The sub-pixel isolation structure 110 can have a height 150 of about 2 μm to about 30 μm, such as 5 μm to 15 μm. A coating material 118 is disposed on the sidewalls and the top surface of the sub-pixel isolation structure 110. The coating material 118 on the sub-pixel isolation structure 110 can provide reflection of the emitted light to contain the converted light reaching the respective sub-pixels, thereby aligning the light to the display. In some embodiments, the coating material 118 is a metal layer. The metal layer includes but is not limited to aluminum, silver, combinations thereof, or the like. In some embodiments, the coating material 118 can include a metal layer and a dielectric layer. The dielectric layer can include silicon nitride (SiN x ) material. The thickness of the metal layer is 100 nm to about 500 nm, and the thickness of the dielectric layer is about 100 nm to about 500 nm. In some embodiments, the coating can be an absorbing material. In other embodiments, the sub-pixel isolation structure 110 can have an inherent reflective property.

[0101] The black matrix structure 109 defines respective color photoresist holes 115 for these sub-pixels 112. A first color photoresist 115A is disposed in the hole 115 of the first sub-pixel 112A, a second color photoresist 115B is disposed in the hole 115 of the second sub-pixel 112B, and a third color photoresist 115C is disposed in the hole 115 of the third sub-pixel 112C. In some embodiments, the first color photoresist 115A is a red photoresist, the second color photoresist 115B is a green photoresist, and the third color photoresist 115C is a blue photoresist. The color photoresist is patterned by UV light. The color photoresist can be used as a color filter to improve the display color quality.

[0102] The black matrix structure 109 includes a black matrix material or a black photoresist material. The black matrix structure 109 can have a width 135 of about 2 μm to about 20 μm. The black matrix structure 109 can have a pitch 145 of about 10 μm to about 40 μm. The black matrix structure 109 can have a height 155 of about 1 μm to 3 μm. The black matrix structure 109 reduces or eliminates the need for a polarizer in the pixel 1100. The black matrix structure 109 can reduce the thickness of the pixel 1100. In addition, the black matrix structure 109 reduces the reflection of the pixel 1100 and improves the brightness of the pixel 1100.

[0103] In one embodiment, as Figure 11A shown, a color conversion transparent layer 1107B, a first adhesive material 1106A, and a UV blocking layer 1124 are disposed between a sub-pixel isolation structure 110 and a cover layer 120. The color conversion transparent layer 1107B is disposed on the sub-pixel isolation structure 110. The first adhesive material 1106A is disposed on the color conversion transparent layer 1107B. The UV blocking layer 1124 is disposed on the first adhesive material 1106A. The first adhesive material 1106A may be disposed between a portion of the color photoresist transparent layer 1107A and the color conversion transparent layer 1107B. For example, the first adhesive material 1106A is disposed on the sides of the color conversion transparent film 1107B, the UV blocking layer 1124, the cover layer 120, and the outermost black matrix structure 109.

[0104] In another embodiment, as Figure 11B shown, the color conversion transparent layer 1107B and the first adhesive material 1106A are disposed between the sub-pixel isolation structure 110 and the cover layer 120. The UV blocking layer 1124 is disposed between the black matrix structure 109 and the color photoresist transparent layer 1107A. The color conversion transparent layer 1107B is disposed on the sub-pixel isolation structure 110. The first adhesive material 1106A is disposed on the color conversion transparent layer 1107B. The cover layer 120 is disposed on the first adhesive material 1106A. The first adhesive material 1106A may be disposed between a portion of the color photoresist transparent layer 1107A and the color conversion transparent layer 1107B. For example, the first adhesive material 1106A is disposed on the sides of the color conversion transparent film 1107B, the UV blocking layer 1124, the cover layer 120, and the outermost black matrix structure 109.

[0105] The cover layer 120 is disposed on the sub-pixel isolation structure 110 and the color photoresist holes 115. The cover layer 120 isolates the color conversion holes 113 from the color photoresist holes 115. The cover layer 120 has a thickness of about 100 nm to about 1 μm. The UV blocking layer 1124 has a thickness of about 100 nm to about 1 μm. The first adhesive material 1106A includes an epoxy-based, acrylic-based, or urethane-based transparent adhesive, or a combination thereof.

[0106] The color photoresist transparent layer 1107A and the color conversion transparent layer 1107B are respectively disposed on the sub-pixel isolation structure 110 and the black matrix structure 109. The color photoresist transparent layer 1107A and the color conversion transparent layer 1107B include a glass material, a polymethyl methacrylate (PMMA) material, or a combination thereof. The structure of the pixel 1100 having the fourth arrangement 1101A and the fifth arrangement 1101B improves the color gamut, contrast, and uniformity of the pixel 1100 while reducing or eliminating top-down crosstalk.

[0107] Figure 12 A flowchart of a method 1200 of forming a pixel 1100 having a fourth arrangement 1101A is shown. Figures 13A to 13G A schematic cross-sectional view of the pixel 1100 during the method 1200 of forming a pixel 1100 having a fourth arrangement 1101A is shown.

[0108] In operation 1201, as Figure 13A shown, these black matrix structures 109 are patterned on the color photoresist transparent layer 1107A. The black matrix structures 109 can be patterned by a lithography process. The black matrix structures 109 define these color photoresist holes 115 of the sub-pixels 112, such as the color photoresist holes 115 of the first sub-pixel 112A, the color photoresist holes 115 of the second sub-pixel 112B, and the color photoresist holes 115 of the third sub-pixel 112C.

[0109] In operation 1202, as shown in FIG. 13B, color photoresist is disposed in these color photoresist holes 115. The first color photoresist 115A is disposed in the color photoresist hole 115 of the first sub-pixel 112A, the second color photoresist 115B is disposed in the color photoresist hole 115B of the second sub-pixel 112B, and the third color photoresist 115C is disposed in the color photoresist hole 115 of the third sub-pixel 112C. An inkjet printing process is used to dispose the color photoresist.

[0110] In operation 1203, as shown in FIG. 13C, a cover layer is disposed on the black matrix structures 109 and the color photoresist (e.g., the first color photoresist 115A, the second color photoresist 115B, and the third color photoresist 115C). The cover layer 120 is disposed on the black matrix structures 109 and the color photoresist using a physical vapor deposition (PVD) process, a chemical vapor deposition process, or other deposition processes.

[0111] In operation 1204, as shown in FIG. 13D, an ultraviolet (UV) blocking layer 624 is disposed on the cover layer 120. A chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or a spin coating process is used to dispose the UV blocking layer.

[0112] In operation 1205, as shown in FIG. 13E, these sub-pixel isolation structures 110 are disposed on the color conversion transparent layer 107B. The sub-pixel isolation structures define these color conversion holes 113. Color conversion materials are disposed in these color conversion holes 113. For example, a first color conversion material 113A is disposed in the color conversion hole 113 of the first sub-pixel 112A, a second color conversion material 113B is disposed in the color conversion hole 113 of the second sub-pixel 112B, and a third color conversion material 113C is disposed in the color conversion hole 113 of the third sub-pixel 112C.

[0113] In operation 1206, as shown in FIG. 13F, the color photoresist transparent layer 1107A is bonded to the color conversion transparent layer 1107B to form the color panel 1105. A first adhesive bonds the color photoresist transparent layer 1107A and the color conversion transparent layer 1107B.

[0114] In operation 1207, as shown in FIG. 13G, the color panel 1105 is bonded to the LED panel 103. A second adhesive material 1106B bonds the color panel 1105 to the LED panel 103. The LED panel 103 includes a backplane 102 and these micro LEDs 104 disposed on the backplane 102. These micro LEDs 104 may include a first micro LED 104A corresponding to the first sub-pixel 112A, a second micro LED 104B corresponding to the second sub-pixel 112B, and a third micro LED 104C corresponding to the third sub-pixel 112C.

[0115] Although the above is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be designed without departing from its basic scope, and its scope is determined by the following claims.

Claims

1. A pixel, comprising: A color panel, comprising: A transparent layer; A plurality of sub-pixel isolation structures, wherein the plurality of sub-pixel isolation structures define a plurality of color conversion holes for a plurality of sub-pixels, and the plurality of color conversion holes comprise: A first color conversion hole of a first sub-pixel; A second color conversion hole of a second sub-pixel; and A third color conversion hole of a third sub-pixel; A first color conversion material is disposed in the first color conversion hole; A second color conversion material is disposed in the second color conversion hole; A third color conversion material is disposed in the third color conversion hole; A plurality of black matrix structures, which are disposed between the plurality of sub-pixel isolation structures and the transparent layer, wherein the plurality of black matrix structures define a plurality of color photoresist holes for the plurality of sub-pixels, and the plurality of color photoresist holes comprise: A first color photoresist hole of the first sub-pixel; The second color photoresist hole of the second sub-pixel; And A third color photoresist hole of the third sub-pixel; And A light-emitting diode (LED) panel, comprising: A plurality of micro-LEDs, wherein a first micro-LED among the plurality of micro-LEDs corresponds to the first sub-pixel, a second micro-LED among the plurality of micro-LEDs corresponds to the second sub-pixel, and a third micro-LED among the plurality of micro-LEDs corresponds to the third sub-pixel; And A backplane, wherein the plurality of micro-LEDs are disposed on the backplane; And An adhesive material, which is disposed between the LED panel and the color panel.

2. The pixel according to claim 1, further comprising: A covering layer, which is disposed between the plurality of sub-pixel isolation structures and the plurality of black matrix structures; and An ultraviolet (UV) blocking layer, which is disposed between the plurality of sub-pixel isolation structures and the covering layer.

3. The pixel according to claim 1, further comprising: A covering layer, which is disposed between the plurality of sub-pixel isolation structures and the plurality of black matrix structures; and An ultraviolet (UV) blocking layer, which is disposed between the plurality of black matrix structures and the transparent layer.

4. The pixel according to claim 1, wherein a coating material is disposed on the plurality of sub-pixel isolation structures.

5. The pixel according to claim 1, wherein the first color conversion material is a red conversion material, the second color conversion material is a green conversion material, and the third color conversion material is a blue conversion material.

6. The pixel according to claim 1, wherein the first color photoresist is a red photoresist, the second color photoresist is a green photoresist, and the third color photoresist is a blue photoresist.

7. A pixel, comprising: A color panel, comprising: A color photoresist transparent layer; A color conversion transparent layer; A plurality of sub-pixel isolation structures, wherein the plurality of sub-pixel isolation structures define a plurality of color conversion holes for a plurality of sub-pixels, and the plurality of color conversion holes comprise: A first color conversion hole of a first sub-pixel; A second color conversion hole of a second sub-pixel; and A third color conversion hole of a third sub-pixel; A first color conversion material is disposed in the first color conversion hole; A second color conversion material is disposed in the second color conversion hole; A third color conversion material is disposed within the third color conversion hole; A first adhesive material is disposed between the color conversion transparent layer and the color photoresist transparent layer; A plurality of black matrix structures are disposed between the transparent layer and the sub-pixel isolation structure, wherein the plurality of black matrix structures define a plurality of color photoresist holes for the plurality of sub-pixels, and the plurality of color photoresist holes include: A first color photoresist hole for the first sub-pixel; A second color photoresist hole for the second sub-pixel; and A third color photoresist hole for the third sub-pixel; and A light-emitting diode (LED) panel, comprising: A plurality of micro LEDs, wherein a first micro LED among the plurality of micro LEDs corresponds to the first sub-pixel, a second micro LED among the plurality of micro LEDs corresponds to the second sub-pixel, and a third micro LED among the plurality of micro LEDs corresponds to the third sub-pixel; and A backplane, wherein the plurality of micro LEDs are disposed on the backplane; and A second adhesive material is disposed between the LED panel and the color panel.

8. The pixel according to claim 7, further comprising: A cover layer disposed between the plurality of sub-pixel isolation structures and the plurality of black matrix structures; and An ultraviolet (UV) blocking layer disposed between the plurality of sub-pixel isolation structures and the cover layer.

9. The pixel according to claim 7, further comprising: A cover layer disposed between the plurality of sub-pixel isolation structures and the plurality of black matrix structures; and An ultraviolet (UV) blocking layer disposed between the plurality of black matrix structures and the transparent layer.

10. The pixel according to claim 7, wherein a coating material is disposed on the plurality of sub-pixel isolation structures.

11. The pixel according to claim 7, wherein the first color conversion material is a red conversion material, the second color conversion material is a green conversion material, and the third color conversion material is a blue conversion material.

12. The pixel according to claim 7, wherein the first color photoresist is a red photoresist, the second color photoresist is a green photoresist, and the third color photoresist is a blue photoresist.

13. A method of fabricating a pixel, the method comprising the steps of: Patterning a plurality of black matrix structures on a transparent layer; Disposing a color photoresist in a plurality of color photoresist holes defined by these black matrix structures; Disposing an isolation structure layer on the plurality of black matrix structures and the plurality of color photoresist holes; Patterning the isolation structure layer to form a plurality of sub-pixel isolation structures; Disposing a color conversion material in a plurality of color conversion holes to form a color panel, wherein the plurality of color conversion holes are defined by the plurality of sub-pixel isolation structures; and Bonding the color panel to a light-emitting diode (LED) panel, the LED panel comprising the plurality of micro LEDs disposed on a backplane.

14. The method according to claim 13, further comprising the step of: Disposing a coating material on the plurality of sub-pixel isolation structures.

15. The method according to claim 13, further comprising the steps of: providing a cover layer over the black matrix structures and the plurality of color photoresist holes; providing a UV blocking layer over the cover layer.

16. The method according to claim 13, further comprising the steps of: providing a cover layer over the black matrix structures and the plurality of color photoresist holes; providing a UV blocking layer over the transparent layer.

17. The method according to claim 13, wherein the transparent layer is a color photoresist transparent layer, further comprising the steps of: providing a cover layer over the black matrix structures and the plurality of color photoresist holes; providing a second adhesive material over the cover layer; and providing a color conversion transparent layer over the second adhesive material.

18. The method according to claim 13, wherein the color conversion material comprises: a first color conversion material disposed in the color conversion hole of the first sub-pixel; a second color conversion material disposed in the color conversion hole of the second sub-pixel; and a third color conversion material disposed in the color conversion hole of the third sub-pixel.

19. The method according to claim 18, wherein the first color conversion material is a red conversion material, the second color conversion material is a green conversion material, and the third color conversion material is a blue conversion material.

20. The method according to claim 13, further comprising: a first color photoresist hole of the first sub-pixel; a second color photoresist hole of the second sub-pixel; and a third color photoresist hole of the third sub-pixel.

Images