Large-scale preparation method of semiconductor quantum fragments

Abstract

The invention relates to a large-scale preparation method of semiconductor quantum fragments, which is characterized in that crystal powder such as indium phosphide, silicon, zinc oxide, gallium nitride, gallium oxide and the like is subjected to ultrasonic treatment, and large-scale quantum fragments are obtained due to ultrahigh pressure collision among crystals. The preparation process is simple, and the diameter of the prepared semiconductor quantum fragment can reach 1nm. A breakthrough is provided for the technical fields of photoelectric detectors, solar cells, quantum science and technology and the like due to the generation of the large-batch semiconductor quantum fragments.

Description

Technical Field

[0001] The present invention relates to a method for large-scale preparation of semiconductor quantum fragments, belonging to the technical field of semiconductor material preparation. Background Art

[0002] Zinc oxide, indium phosphide, silicon, etc. all belong to important semiconductors and have important applications in integrated circuits, solar energy, light-emitting diodes, etc. After more than 100 years of development, quantum mechanics has reached the application level. In recent years, semiconductor quantum wells, quantum dots, etc. have been widely used, but most quantum dots are synthesized by bottom-up chemical reactions and lack a unified method. In fact, quantum effects mainly consider that at low-dimensional scales, atomic substances exhibit quantum properties different from macroscopic substances. From this perspective, irregularly shaped quantum dots, quantum flakes, quantum wires, and atomic clusters can all be collectively referred to as quantum fragments. The present invention provides an inventive method for semiconductor quantum fragments, thus providing a new path for the preparation and development of quantum materials. Summary of the Invention

[0003] The purpose of the present invention is to provide a method for large-scale preparation of semiconductor quantum fragments in view of the blank of the prior art.

[0004] The technical solution adopted by the present invention is as follows:

[0005] A method for large-scale preparation of semiconductor quantum fragments includes the following:

[0006] Put semiconductor powder into a solution;

[0007] Perform ultrasonic treatment;

[0008] Let the obtained solution stand to obtain the upper-layer solution; that is, obtain the semiconductor quantum fragment solution.

[0009] In the above technical solution, further, the semiconductor material is one or more of indium phosphide, silicon, zinc oxide, gallium nitride, and gallium oxide.

[0010] Further, the solution is one or more of oleic acid, toluene, NMP, IPA, DMF, acetone, alcohol, and water.

[0011] Further, the frequency of the ultrasonic wave is not less than 10 KHz, the power is not less than 100 W, and the ultrasonic time is 10 seconds to 10,000 hours.

[0012] The beneficial effects of the present invention compared with the prior art are as follows:

[0013] The preparation process of the present invention is simple. The obtained quantum fragments can reach 1 nm and can be used to prepare different types of semiconductors. These quantum fragments have good luminescence properties. The birth of quantum fragments will provide a new development path for the fields of photodetectors, solar cells, integrated circuits, and quantum communication technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is an optical picture of the indium phosphide quantum fragment solution obtained in Example 1;

[0015] Figure 2a 、 2b is a high-resolution TEM image of the indium phosphide quantum fragments obtained in Example 1;

[0016] Figure 3 is the fluorescence spectrum of the indium phosphide quantum fragments in Example 1.

[0017] Figure 4 is a transmission electron microscope image of the silicon quantum fragments in Example 2.

[0018] Figure 5 is the XPS diagram of the silicon quantum fragments in Example 2.

[0019] Figure 6 is the TEM image of the zinc oxide quantum dots in Example 3.

[0020] Figure 7 is the TEM image of the gallium nitride quantum dots in Example 4.

[0021] Figure 8 is the TEM image of the gallium oxide quantum dots in Example 5.

[0022] Figure 9 is the XPS diagram of the gallium oxide quantum dots in Example 5. DETAILED DESCRIPTION OF THE INVENTION

[0023] The technical solutions of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0024] The present invention can achieve the batch preparation of semiconductor quantum fragments by a simple method of ultrasonic treatment in solution. The method is simple and suitable for large-scale production.

[0025] The preparation method of the semiconductor quantum fragments of the present invention includes the following steps:

[0026] 1) Obtain semiconductor powders such as indium phosphide, zinc oxide, and silicon;

[0027] 2) Place the selected semiconductor powder into solutions such as oleic acid, toluene, NMP, IPA, DMF, acetone, alcohol, water, or any mixture of several of them to form a mixed solution, and perform ultrasonic treatment. Under the action of ultrasonic waves, the semiconductor powder particles collide violently with each other, generating impacts with extremely high pressures (up to dozens of GPa) between extremely small contact surfaces, thereby breaking some chemical bonds of the powder particles. During the continuous collision and fragmentation process, quantum dots, or quantum fragment structures such as irregular quantum wires and quantum sheets are formed.

[0028] 3) Let the reactants stand for precipitation.

[0029] 4) Take the upper-layer solution to obtain a liquid containing a large amount of semiconductor quantum fragments.

[0030] In the method of the present invention, the dosages of the semiconductor powder and the solution are usually not less than 0.01 mg / mL.

[0031] For the ultrasonic wave used, the frequency should usually be not less than 10 KHz and the power should be not less than 100 W. The ultrasonic treatment time can be long or short, and can be from 10 seconds to 10,000 hours. When the ultrasonic frequency and power are high enough, the ultrasonic time can be shorter, and it can even be completed within a few seconds. This method does not require controlling the reaction temperature and can be prepared at room temperature or high temperature.

[0032] In the present invention, the semiconductor material powder and the solution used can be directly purchased.

[0033] Example 1:

[0034] 1) Add 200 g of InP crystal powder into 500 mL of acetone solution.

[0035] 2) Place it in an ultrasonic machine and perform ultrasonic treatment for half an hour at a power of 1 kilowatt and a frequency of 20 KHz.

[0036] 3) Precipitate for 10 minutes, and pour the upper-layer non-precipitate into a clean bottle.

[0037] Figure 1 It is an optical picture of the quantum dot solution, and a large amount of solution can be seen. Figure 2a 、 2b It is a TEM picture of the quantum fragments obtained in this example. It can be clearly seen that there are a large number of quantum dots, as well as many irregular quantum wires or quantum sheets (i.e., irregular wire or irregular sheet structures composed of several atomic lattices), and the size can reach 1 nm. Figure 3 It is a luminescence performance picture of the quantum fragments obtained in this example.

[0038] Example 2:

[0039] 1) Add 300 g of crystalline silicon powder into 50 mL of acetone solution.

[0040] 2) Place it in an ultrasonic machine and ultrasonicate for half an hour at a power of 1 kilowatt and a frequency of 20 KHz;

[0041] 3) Let it precipitate for 20 minutes, and pour the upper non-precipitate into a clean bottle;

[0042] Figure 4a 、 4b 4c is the TEM image of the quantum fragments obtained in this example (mostly quantum dots), Figure 5 which is the XPS image of the quantum fragments obtained in this example. It can be seen that the obtained is silicon quantum material.

[0043] Example 3:

[0044] 1) Add 0.5 g of crystalline ZnO powder to 50 mL of NMP solution;

[0045] 2) Place it in an ultrasonic machine and ultrasonicate for half an hour at a power of 1 kilowatt and a frequency of 20 KHz;

[0046] 3) Let it precipitate for 10 minutes, and pour the upper non-precipitate into a clean bottle;

[0047] Figure 6 which is the TEM image of the quantum dots obtained in this example. It can be seen that a large number of quantum dots are prepared, and their particle size is ~2 nm.

[0048] Example 4:

[0049] 2) Add 5 g of crystalline gallium nitride powder to 100 mL of NMP solution;

[0050] 2) Place it in an ultrasonic machine and ultrasonicate for half an hour at a power of 5 kilowatts and a frequency of 10 KHz;

[0051] 3) Let it precipitate for 5 minutes, and pour the upper non-precipitate into a clean bottle;

[0052] Figure 7 which is the TEM image of the quantum dots obtained in this example. It can be seen that quantum dots are prepared, and their particle size is ~3 nm.

[0053] Example 5:

[0054] 3) Add 50 g of crystalline gallium oxide powder to 100 mL of NMP solution;

[0055] 2) Place it in an ultrasonic machine and ultrasonicate for half an hour at a power of 200 watts and a frequency of 10 KHz;

[0056] 3) Let it precipitate for 5 minutes, and pour the upper non-precipitate into a clean bottle;

[0057] Figure 8It is the TEM image of the quantum dots obtained in this example. It can be seen that the quantum dots are prepared, and their particle size is ~1 nm. Figure 9 It is the XPS image of the quantum dots obtained in this example. The gallium peak is located near 26 eV, and the oxygen peak is located near 532 eV. It can be seen that the obtained quantum dots are gallium oxide.

[0058] The above-described embodiments are only partial implementation solutions of the present invention, but they are not intended to limit the present invention. Those of ordinary skill in the relevant technical field can also make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, all technical solutions obtained by adopting the means of equivalent replacement or equivalent transformation fall within the protection scope of the present invention.

Claims

1. A large-scale preparation method of semiconductor quantum fragments, characterized in that The following are included: Put semiconductor powder into a solution; Perform ultrasonic treatment; Let the obtained solution stand still to obtain the upper-layer solution; namely, a semiconductor quantum fragment solution is obtained.

2. The large-scale preparation method of the semiconductor quantum fragment according to claim 1, characterized in that The semiconductor material is one or more of indium phosphide, silicon, zinc oxide, gallium nitride, and gallium oxide.

3. The large-scale preparation method of the semiconductor quantum fragment according to claim 1, wherein, The solution is one or more of oleic acid, toluene, NMP, IPA, DMF, acetone, alcohol, and water.

4. The large-scale preparation method of the semiconductor quantum fragment according to claim 1, wherein The frequency of the ultrasonic wave is not less than 10 KHz, and the power is not less than 100 W.

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