Coating equipment and forming method thereof, and forming method of semiconductor structure

Abstract

The invention discloses coating equipment and a forming method thereof and a forming method of a semiconductor structure, and the coating equipment comprises a cavity which comprises a first part and a second part which are connected with each other, and the first part and the second part are closed to form a closed cavity; the carrying table is arranged at the bottom of the cavity, is used for placing a to-be-coated material and can move along a first direction and a second direction, and the first direction and the second direction are parallel to the bottom surface of the second part and are perpendicular to each other; the focusing ion source is arranged in the first part and used for emitting focusing ion beams to the surface of the to-be-coated material on the carrying table, the focusing ion source and the carrying table are oppositely arranged, the focusing ion source can move up and down in the third direction, and the third direction is perpendicular to the first direction and the second direction. According to the coating equipment, a film can be deposited on the surface of a local area or the surface of the whole area of the to-be-coated material, so that the purposes of carrying out shaping treatment on the surface of the to-be-coated material in the local area or the whole area, depositing the film and the like are achieved.

Description

Technical Field

[0001] The present invention relates to the field of coating technology, and particularly to a coating device and its forming method, and a forming method of a semiconductor structure. Background Art

[0002] The preparation of semiconductor thin films is one of the important steps in manufacturing semiconductor devices. Commonly used existing technologies for preparing semiconductor thin films include plasma enhanced chemical vapor deposition (PECVD), metal organic chemical vapor deposition (MOCVD), magnetron sputtering (MS), and ion beam sputtering deposition (IBD), etc.

[0003] However, when preparing thin films on the surface of a wafer using existing technologies, due to process or equipment problems, the prepared thin films have problems of poor flatness and poor film formation quality at the film edge. Poor flatness will affect the smooth progress of subsequent processes. Especially in the subsequent etching process, poor flatness may lead to over-etching, causing damage to the substrate or the underlying thin film. Poor film formation quality at the film edge will result in a significant reduction in the effective utilization area of the wafer, which will significantly reduce the utilization rate of the wafer and increase the production and processing costs.

[0004] Therefore, how to effectively improve the flatness of the thin film and increase the effective utilization area of the wafer is an urgent problem to be solved currently. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a coating device and its forming method, and a forming method of a semiconductor structure, which can effectively improve the flatness of the thin film and can increase the effective utilization area of the material to be repaired (including wafers).

[0006] To solve the above technical problem, the technical solution of the present invention provides a coating device, including: a cavity, the cavity includes a first part and a second part connected to each other. After the first part and the second part are closed, they form a closed cavity; a stage disposed at the bottom of the second part, the stage is used to place the material to be coated, the stage can move along a first direction and a second direction, the first direction and the second direction are parallel to the bottom surface of the cavity, and the first direction and the second direction are perpendicular to each other; a focused ion source disposed in the first part, the focused ion source is used to emit a focused ion beam to the surface of the material to be coated on the stage, the focused ion source is disposed opposite to the stage, and the focused ion source can move up and down along a third direction, the third direction is perpendicular to the first direction and the second direction.

[0007] Optionally, it further includes: a slide rail device disposed at the bottom of the second part, the stage is disposed on the slide rail device, and the stage can move along the first direction and the second direction through the slide rail device.

[0008] Optionally, the slide rail device includes: a first slide rail fixed to the bottom of the second part, and a second slide rail disposed on the first slide rail. The stage is disposed on the second slide rail. The extending direction of the first slide rail is parallel to the first direction, and the extending direction of the second slide rail is parallel to the second direction. The stage can move along the second direction through the second slide rail, and the second slide rail and the stage can move along the first direction through the first slide rail.

[0009] Optionally, the focused ion source can rotate around the first direction.

[0010] Optionally, the stage can rotate around the first direction; the focused ion source and the stage can rotate relative to each other around the first direction.

[0011] Optionally, it further includes: a third slide rail disposed on the inner wall of the first part; a connecting rod, one end of the connecting rod is connected to the third slide rail, and the other end of the connecting rod is fixedly connected to the focused ion source. The extending direction of the third slide rail is parallel to the third direction, and the focused ion source moves up and down along the third direction through the third slide rail.

[0012] Optionally, it further includes: a target component disposed between the focused ion source and the stage. The target component is used to form sputtering ions to deposit on the surface of the material to be coated placed on the stage after being bombarded by the focused ion source.

[0013] Optionally, the target component includes: a target base, a rotating rod, and a target. The target is fixedly installed on the target base. One end of the rotating rod is movably connected to the target base, and the other end of the rotating rod is connected to the first part. The rotating rod can drive the target base and the target to rotate around the first direction.

[0014] Optionally, the distance between the target and the material to be coated placed on the surface of the stage ranges from 20 millimeters to 50 millimeters.

[0015] Optionally, it further includes: a heating device disposed in the stage. The heating device can heat the material to be coated placed on the surface of the stage.

[0016] Optionally, the focused ion source includes: a housing; a quartz cup embedded in the housing. The quartz cup includes a cup mouth and a cup bottom. The cup mouth faces the stage, and the housing exposes the cup mouth of the quartz cup; a focusing grid disposed at the cup mouth of the quartz cup; a coil disposed between the side wall of the quartz cup and the housing; a first intake pipe passing through the housing and the cup bottom of the quartz cup. The first intake pipe is connected to an external gas path, and the first intake pipe is used to introduce a first gas into the quartz cup.

[0017] Optionally, it further includes: a gas jetting device disposed on the side wall of the outer shell outside the focusing grid, the gas jetting device includes a gas jet nozzle, and the gas jet nozzle is used to jet a second gas into the deposition area where the focused ion beam intersects with the material to be coated.

[0018] Optionally, it further includes: a second intake pipe connected to the gas jetting device, the second intake pipe is connected to an external gas path, and the second intake pipe is used to introduce the second gas into the gas jetting device.

[0019] Optionally, the mouth of the quartz cup faces the stage, and the distance between the mouth of the quartz cup and the material to be coated on the stage ranges from 60 mm to 150 mm.

[0020] Optionally, it further includes: a fixing component fixed on the surface of the stage, the material to be coated is fixed on the stage through the fixing component, and the stage can drive the fixing component and the material to be coated to rotate around the third direction.

[0021] Correspondingly, the technical solution of the present invention also provides a working method of a coating device, including: providing a coating device; providing a material to be coated and placing it on the stage; setting the positions of the stage and the focused ion source; and depositing a thin film on the surface of a local area or the entire area of the material to be coated according to the mutual cooperation of the stage position and the focused ion source position.

[0022] Optionally, depositing a thin film on the surface of a local area of the material to be coated includes: moving the first slide rail and the second slide rail to drive the stage to move, so that the deposition area corresponds to the local area of the material to be coated that needs to be coated, and adjusting the residence time of the deposition area in each area of the surface of the material to be coated by controlling the moving speeds of the stage in the first direction and the second direction, thereby controlling the film thickness of each area of the surface of the material to be coated; or keeping the positions of the first slide rail and the second slide rail unchanged, rotating the stage to drive the material to be coated to rotate, controlling the deposition area of the thin film on the surface of the material to be coated by adjusting the rotation angle of the stage, and adjusting the residence time of the deposition area in each area of the surface of the material to be coated by adjusting the rotation speed of the stage at different positions, thereby controlling the film thickness of each area of the surface of the material to be coated.

[0023] Optionally, depositing a thin film on the surface of the entire area of the material to be coated includes: moving the first slide rail and the second slide rail to drive the stage to move, so that the deposition area covers the entire surface area of the material to be coated.

[0024] Optionally, it further includes: using a heating device to heat the material to be coated on the stage to a preset temperature.

[0025] Optionally, the process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes a chemical vapor deposition process.

[0026] Optionally, depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes: introducing a first gas into the focused ion source; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam that shoots towards the surface of the material to be coated to form a deposition area, and depositing a thin film on the surface of a partial area or the entire area of the material to be coated.

[0027] Optionally, the first gas includes one or more of a reactive gas and a carrier gas. The reactive gas includes methane, propylene, trimethylsilane, tetraethoxysilane, silane, titanium tetrachloride, tungsten hexafluoride, hydrogen, ammonia, nitrogen, nitrous oxide, or oxygen; the carrier gas includes argon or helium.

[0028] Optionally, depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes: introducing a first gas into the focused ion source; introducing a second gas into the jet device; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam that shoots towards the surface of the material to be coated to form a deposition area, and depositing a thin film on the surface of a partial area or the entire area of the material to be coated in combination with the second gas.

[0029] Optionally, the first gas includes one or more of a reactive gas and a carrier gas; the second gas includes one or more of a reactive gas and a carrier gas; the reactive gas includes methane, propylene, trimethylsilane, tetraethoxysilane, silane, titanium tetrachloride, tungsten hexafluoride, hydrogen, ammonia, nitrogen, nitrous oxide, or oxygen; the carrier gas includes argon or helium.

[0030] Optionally, the types of the first gas and the second gas are different.

[0031] Optionally, the process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes a physical vapor deposition process.

[0032] Optionally, depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes: rotating the rotating rod to drive the target base and the target to rotate around a first direction so that the target reaches a preset position; rotating the connecting rod to drive the focused ion source to rotate around the first direction so that the focused ion source reaches a preset position; introducing a first gas into the focused ion source; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam that shoots towards the surface of the target, bombarding to form sputtering ions that shoot towards the material to be coated to form a deposition area.

[0033] Accordingly, the technical solution of the present invention further provides a method for forming a semiconductor structure, including: providing a layer to be coated; using a coating device to deposit a thin film layer on the surface of a partial area or the entire area of the layer to be coated.

[0034] Optionally, the layer to be coated includes: a substrate and a layer to be repaired located on the substrate, the layer to be repaired includes a defective area, and the film thickness of the defective area is lower than or higher than the average film thickness of the layer to be repaired.

[0035] Optionally, depositing a thin film layer on the surface of a partial area of the layer to be coated includes: using a deposition process to deposit a thin film layer in the defective area of the layer to be coated, and the average film thickness of the thin film layer and the layer to be repaired is within a preset range.

[0036] Optionally, depositing a thin film layer on the surface of the entire area of the layer to be coated includes: using a deposition process to form the thin film layer on the surface of the layer to be coated, and the top surface of the thin film layer is higher than the top surface of the layer to be repaired.

[0037] Optionally, the deposition process includes a physical vapor deposition process or a chemical vapor deposition process.

[0038] Optionally, the material of the thin film layer is the same as the material of the layer to be repaired, or the material of the thin film layer is different from the material of the layer to be repaired.

[0039] Optionally, it further includes: etching the thin film layer and the layer to be repaired until the layer to be coated reaches a thickness within a predetermined range.

[0040] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0041] For the coating device and the working method of the coating device of the present invention, the stage can move along the first direction and the second direction, the focused ion source can move up and down along the third direction, and the coating device adjusts and coordinates the positions of the stage and the focused ion source. The focused ion beam emitted by the focused ion source forms a deposition area on the surface of the material to be coated, and it can achieve depositing a thin film on the surface of a partial area or the entire area of the material to be coated, so as to achieve the purposes of performing shape modification treatment, depositing a thin film, etc. on a partial area or the entire area of the surface of the material to be coated, improving the yield and availability of the material to be coated, and saving production costs.

[0042] For the method for forming a semiconductor structure of the present invention, a coating device is used to deposit a thin film on the surface of a partial area or the entire area of the layer to be coated, so as to achieve the purposes of performing shape modification treatment, depositing a thin film, etc. on a partial area or the entire area of the surface of the layer to be coated, improving the yield and availability of the layer to be coated, and saving production costs. Description of the Drawings

[0043] Figures 1 to 4 is a schematic structural diagram of a coating device in an embodiment of the present invention;

[0044] Figure 5 is a schematic structural diagram of a coating device in another embodiment of the present invention;

[0045] Figure 6 and Figure 7 is a schematic structural diagram of a coating device in another embodiment of the present invention;

[0046] Figure 8 and Figure 9 is a schematic structural diagram of a coating device in another embodiment of the present invention;

[0047] Figure 10 is a schematic flowchart of a working method of a coating device in an embodiment of the present invention;

[0048] Figure 11 and Figure 12 is a schematic diagram of the formation process of a semiconductor structure in an embodiment of the present invention;

[0049] Figures 13 to 16 is a schematic diagram of the formation process of a semiconductor structure in another embodiment of the present invention. Detailed implementation manners

[0050] As in the background art, therefore, how to effectively improve the flatness of the thin film and increase the effective utilization area of the wafer is an urgent problem to be solved currently.

[0051] The technical solution of the present invention provides a coating device, its forming method, and a forming method of a semiconductor structure, which can effectively improve the flatness of the thin film and increase the effective utilization area of the material to be repaired (including wafers).

[0052] To make the above objects, features, and beneficial effects of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.

[0053] Figures 1 to 4 is a schematic structural diagram of a coating device in an embodiment of the present invention.

[0054] Please refer to Figure 1, the coating equipment includes: a cavity, which includes a first part 101 and a second part 102 connected to each other. After the first part 101 and the second part 102 are closed, they form a sealed cavity; a stage 110 provided at the bottom of the second part 102, and the stage 110 is used to place the material to be coated 113. The stage 110 can move along a first direction X and a second direction Y. The first direction X and the second direction Y are parallel to the bottom surface of the cavity, and the first direction X and the second direction Y are perpendicular to each other; a focused ion source 130 provided in the first part 101, and the focused ion source 130 is used to emit a focused ion beam 136 to the surface of the material to be coated 113 on the stage 110. The focused ion source 130 is disposed opposite to the stage 110, and the focused ion source 130 can move up and down along a third direction Y, and the third direction Y is perpendicular to the first direction X and the second direction Y.

[0055] For the coating equipment, the stage 110 can move along the first direction X and the second direction Y, and the focused ion source 130 can move up and down along the third direction Z. By adjusting and coordinating the positions of the stage 110 and the focused ion source 130, the focused ion beam 136 emitted by the focused ion source 130 forms a deposition area 100 on the surface of the material to be coated 113 ( Figure 2 and Figure 3 as shown), which can achieve depositing a thin film on the surface of a local area or the entire area of the material to be coated 113, so as to achieve the purposes of modifying the surface of the material to be coated 113 in a local area or the entire area, depositing a thin film, etc., improving the yield and availability of the material to be coated 113, and saving production costs.

[0056] In this embodiment, the first part 101 and the second part 102 are vertically stacked, the first part 101 is disposed above the second part 102, and the first direction X and the second direction Y are parallel to the bottom surface of the second part 102.

[0057] Please refer to Figure 2 and Figure 3 and continue to refer to Figure 1 , Figure 2 and Figure 3 which are the top views of opening the first part 101. In this embodiment, the coating equipment further includes: a slide rail device provided at the bottom of the second part 102, and the stage 110 is disposed on the slide rail device, and the stage 110 can move along the first direction X and the second direction Y through the slide rail device.

[0058] The slide rail device includes: a first slide rail 112 fixed to the bottom of the second part 102, and a second slide rail 114 disposed on the first slide rail 112. The stage 110 is disposed on the second slide rail 114. The extending direction of the first slide rail 112 is parallel to the first direction X, and the extending direction of the second slide rail 114 is parallel to the second direction Y. The stage 110 can move along the second direction Y through the second slide rail 114, and the second slide rail 114 and the stage 110 can move along the first direction X through the first slide rail 112.

[0059] The second slide rail 114 drives the stage 110 to move along the second direction Y, and the first slide rail 112 drives the stage 110 to move along the first direction X, so as to deposit a thin film on a partial area or the entire area of the surface of the material to be coated 113.

[0060] In this embodiment, the moving path range of the stage 110 in the first direction X is 400 millimeters to 700 millimeters; the moving path range of the stage 110 in the second direction Y is 400 millimeters to 700 millimeters.

[0061] In this embodiment, the first slide rail 112 is driven to move along the first direction X by a servo motor, and the second slide rail 114 is driven to move along the second direction Y by a servo motor; the way that the stage 110 moves along the second direction Y through the second slide rail 114 and moves along the first direction X through the first slide rail 112 is a parallel movement.

[0062] Please continue to refer to Figure 1 , in this embodiment, the coating device further includes: a heating device 111 disposed in the stage 110, and the heating device 111 can heat the material to be coated 113 placed on the surface of the stage 110.

[0063] Please continue to refer to Figure 1 , in this embodiment, the focused ion source 130 includes: a housing 134; a quartz cup 131 embedded in the housing 134. The quartz cup 131 includes a cup mouth and a cup bottom, the cup mouth faces the stage 110, and the housing 134 exposes the cup mouth of the quartz cup 131; a focusing grid 132 disposed at the cup mouth of the quartz cup 131; a coil 135 disposed between the side wall of the quartz cup 131 and the housing 134; a first intake pipe 133 passing through the housing 134 and the cup bottom of the quartz cup 131, and the first intake pipe 133 is connected to an external gas path 142, and the first intake pipe 133 is used for introducing a first gas into the quartz cup 131.

[0064] The cup mouth of the quartz cup 131 faces the stage 110. In this embodiment, the distance range between the cup mouth of the quartz cup 131 and the material to be coated 113 on the stage 110 is: 60 millimeters to 150 millimeters.

[0065] The focusing grid 132 includes a plurality of grid holes. In this embodiment, the diameter range of the grid hole opening area of the focusing grid 132 is 10 mm to 60 mm.

[0066] The external gas path 142 supplies process gas. The first gas enters the interior of the quartz cup 131 through the first inlet pipe 133. The RF power supply 141 supplies RF energy to the coil 135 through the RF matcher 140. The coil 135 applied with RF energy can drive the first gas inside the quartz cup 131 to be ionized to form a plasma. Then, positive electricity and negative electricity are respectively applied to the screen grid and the acceleration grid of the focusing grid 132, so as to realize the extraction of the focused ion beam 136. The extracted focused ion beam 136 will shoot onto the surface of the material to be coated 113 to form a deposition area.

[0067] The first gas includes one or more of a reaction gas and a carrier gas.

[0068] The reaction gas includes methane (CH4), propylene (C3H6), trimethylsilane (3MS), tetraethoxysilane (TEOS), silane (SiH4), titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), hydrogen (H2), ammonia (NH3), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), etc.; the carrier gas includes argon or helium, etc.

[0069] Please refer to Figure 4 Continue to refer to Figure 1 , Figure 4 FIG. is an enlarged schematic diagram of the focused ion source 130. In this embodiment, the coating equipment further includes: a third slide rail 138 disposed on the inner wall of the first part 101; a connecting rod 137, one end of the connecting rod 137 is connected to the third slide rail 138, and the other end of the connecting rod 137 is fixedly connected to the focused ion source 130. The extending direction of the third slide rail 138 is parallel to the third direction Z. The focused ion source 130 moves up and down along the third direction Z through the third slide rail 138.

[0070] In this embodiment, the moving path range of the focused ion source 130 in the third direction Z is 10 mm to 500 mm.

[0071] In this embodiment, the connecting rod 137 can drive the focused ion source 130 to rotate around the first direction X.

[0072] In this embodiment, the angle range for the connecting rod 137 to drive the focused ion source 130 to rotate around the first direction X is: -60 degrees to 60 degrees.

[0073] When the cup mouth of the focused ion source 130 faces the surface of the stage 110, the defined angle is 0 degree.

[0074] In other embodiments, one end of the connecting rod is fixedly connected to the third slide rail, and the connecting rod cannot drive the focused ion source to rotate around the first direction.

[0075] In this embodiment, driving the connecting rod 137 by a servo motor can drive the focused ion source 130 to rotate around the first direction X.

[0076] Please continue to refer to Figure 1 , in this embodiment, the coating equipment further includes: a plurality of hinges 103 provided on one side of the outer surfaces of the first part 101 and the second part 102, the first part 101 and the second part 102 are connected by the plurality of hinges 103; a handle 105 provided on the other side of the outer surfaces of the first part 101 and the second part 102, the handle 105 and the hinge 103 are located on opposite sides of the cavity, and the cavity can be opened and closed through the handle 105 and the hinge 103 to facilitate opening the cavity for maintenance.

[0077] In this embodiment, the coating equipment further includes: a sealing ring (not shown) provided at the joint between the first part 101 and the second part 102, and the first part 101 and the second part 102 are coupled through the sealing ring.

[0078] Please continue to refer to Figure 1 , in this embodiment, the coating equipment further includes: a hatch 104 provided on one side of the cavity, the hatch 104 can be opened and closed, the hatch 104 is connected to the vacuum transfer platform, and the hatch 104 is used for the vacuum transfer platform to transfer the material to be coated 113.

[0079] Please continue to refer to Figure 1 , in this embodiment, the coating equipment further includes: a radio frequency device, the radio frequency device includes: a radio frequency matcher 140 electrically connected to the focused ion source 130; a radio frequency power supply 141 electrically connected to the radio frequency matcher 140, and the radio frequency power supply 141 provides radio frequency energy to the focused ion source 130 through the radio frequency matcher 140.

[0080] In this embodiment, the coating equipment further includes: a fixing component (not shown) fixed on the surface of the stage 110, the material to be coated 113 is fixed on the stage 110 through the fixing component, and the stage 110 can drive the fixing component and the material to be coated to rotate around the third direction Y.

[0081] In this embodiment, the rotation speed range of the stage 110 driving the material to be coated to rotate around the third direction Y is: 0 revolutions per minute to 80 revolutions per minute.

[0082] In this embodiment, the stage 110 is driven by a magnetic fluid to drive the material to be coated to rotate around the third direction Y.

[0083] In this embodiment, a vacuum pump (not shown) and corresponding pipelines (not shown) are further provided on the cavity. The vacuum pump and the corresponding pipelines are used to maintain the vacuum state inside the cavity, and the air extraction hole can be located at any feasible position on the cavity.

[0084] The stage 110 is driven to move along the second direction Y by the second slide rail 114, and the stage 110 is driven to move along the first direction X by the first slide rail 112. Combined with the rotation of the stage 110 and the up and down movement of the focused ion source 130 along the third direction Y, local or all areas on the surface of the material 113 to be coated can be subjected to thin film deposition, improving the yield and availability of the material 113 to be coated, and saving production costs.

[0085] Figure 5 It is a schematic structural diagram of a coating device in another embodiment of the present invention.

[0086] Please refer to Figure 5 , Figure 5 For the schematic diagram based on Figure 1 , the difference between the coating device in Figure 5 and the coating device in Figure 1 is that in this embodiment, the coating device further includes: a gas jetting device 210 provided on the side wall of the outer shell 134 outside the focusing grid 132. The gas jetting device 210 includes a gas jet nozzle, and the gas jet nozzle is used to jet a second gas into the deposition area (refer to the 110 area in Figure 2 and Figure 3 ) where the focused ion beam 136 intersects with the material 113 to be coated.

[0087] In this embodiment, the coating device further includes: a second air inlet pipe 212 connected to the gas jetting device 210. The second air inlet pipe 212 is connected to the external gas path 142, and the second air inlet pipe 212 is used to introduce the second gas into the gas jetting device 210.

[0088] In this embodiment, the gas jetting device 210 includes a gas jet gun. In other embodiments, the gas jetting device can also be other gas jetting equipment.

[0089] The types of the first gas and the second gas are different. The first gas and the second gas can be gases that are prone to chemical reactions, so they are respectively introduced through the first air inlet pipe 133 and the second air inlet pipe 212 to avoid the situation that the first gas and the second gas are prone to react in the same gas path.

[0090] The first gas includes one or more of a reaction gas and a carrier gas, and the second gas includes one or more of a reaction gas and a carrier gas.

[0091] The reactive gases include methane (CH4), propylene (C3H6), trimethylsilane (3MS), tetraethyl orthosilicate (TEOS), silane (SiH4), titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), hydrogen (H2), ammonia (NH3), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), etc.; the carrier gas includes argon or helium, etc.

[0092] Figure 6 and Figure 7 is a schematic structural diagram of a coating device in another embodiment of the present invention.

[0093] Please refer to Figure 6 , Figure 6 is a schematic diagram based on Figure 1 The difference between the coating device in Figure 6 and the coating device in Figure 1 is that in this embodiment, the coating device further includes: a target assembly 230 disposed between the focused ion source 130 and the stage 110. The target assembly 230 is configured to form sputtering ions 240 after being bombarded by the focused ion source 130 and deposit on the surface of the material to be coated 113 placed on the stage 110.

[0094] Please combine Figure 7 and continue to refer to Figure 6 , Figure 7 is an enlarged schematic diagram of the target assembly 230. In this embodiment, the target assembly 230 includes: a target base 232, a rotating rod 231, and a target 233. The target 233 is fixedly installed on the target base 232. One end of the rotating rod 231 is movably connected to the target base 232, and the other end of the rotating rod 231 is connected to the first part 101. The rotating rod 231 can drive the target base 232 and the target 233 to rotate around the first direction X.

[0095] In this embodiment, the rotation angle range of the rotating rod 231 driving the target base 232 and the target 233 to rotate around the first direction X is from 0 degree to 360 degrees.

[0096] In this embodiment, the target base 232 is internally passed with cooling water, which can cool the target 233 during the processing to prevent the target 233 from deforming due to high temperature. The cooling water in the target base 232 can be connected to the target base 232 through a separate water pipe, or the cooling water can be introduced into the target base 232 through the rotating rod 231.

[0097] In this embodiment, the spacing range between the target 233 and the material to be coated 113 placed on the surface of the stage 110 is from 20 millimeters to 50 millimeters.

[0098] In this embodiment, the first gas includes inert gas, and the inert gas includes argon or helium.

[0099] In this embodiment, the material of the target 233 includes: alumina, carbon, silicon nitride compound or metal, and the metal includes aluminum.

[0100] In this embodiment, driving the rotating rod 231 by a servo motor can drive the target base 232 and the target 233 to rotate around the first direction X.

[0101] In this embodiment, the distance between the rotating rod 231 and the surface of the material to be coated 113 is 20 mm to 50 mm.

[0102] Figure 8 and Figure 9 is a schematic structural diagram of a coating device in another embodiment of the present invention.

[0103] Please refer to Figure 8 , Figure 8 in the coating device and Figure 1 The difference between the coating devices in is that, in this embodiment, the coating device further includes: a bracket 115 disposed between the stage 110 and the slide rail device, and the bracket 115 includes a rotating shaft that can drive the stage 110 to rotate around the first direction X.

[0104] Please refer to Figure 9 , in this embodiment, the range of the angle β of the rotating shaft driving the stage to rotate around the first direction X is: -60 degrees to 60 degrees.

[0105] β is defined as 0° when the surface of the stage 110 faces the outlet of the focused ion source 130.

[0106] In this embodiment, one end of the connecting rod 137 is fixedly connected to the third slide rail 138, and the connecting rod 137 cannot drive the focused ion source 130 to rotate around the first direction X. The stage is driven to rotate around the first direction X by rotating the rotating shaft.

[0107] In another embodiment, one end of the connecting rod 137 is connected to the third slide rail 138, and the connecting rod 137 can drive the focused ion source 130 to rotate around the first direction X; and the rotating shaft can drive the stage 110 to rotate around the first direction X. The focused ion source 130 and the stage 110 can rotate relative to each other around the first direction X.

[0108] In this embodiment, the rotating shaft is driven by a servo motor to drive the stage 110 to rotate around the first direction X; the connecting rod 137 is driven by a servo motor to drive the focused ion source 130 to rotate around the first direction X.

[0109] In this embodiment, the first part 101 and the second part 102 are vertically stacked, the first part 101 is disposed above the second part 102, and the first direction X and the second direction Y are parallel to the bottom surface of the second part 102.

[0110] In another embodiment, the first part and the second part are placed horizontally. By adjusting the rotating shaft, the stage is driven to rotate around the first direction, and by adjusting the connecting rod, the focused ion source is driven to rotate around the first direction, so that the focused ion source faces the material to be coated placed on the stage.

[0111] Figure 10 It is a schematic flowchart of the working method of the coating device in the embodiment of the present invention.

[0112] Please refer to Figure 10 , the working method of the coating device includes:

[0113] Step S10: Provide a coating device;

[0114] Step S20: Provide the material 113 to be coated and place it on the stage 110;

[0115] Step S30: Set the positions of the stage 110 and the focused ion source 130;

[0116] Step S40: According to the mutual cooperation of the positions of the stage 110 and the focused ion source 130, deposit a thin film on the surface of a partial area or the entire area of the material 113 to be coated.

[0117] Depositing a thin film on the surface of a partial area of the material 113 to be coated includes: moving the first slide rail 112 and the second slide rail 114 to drive the stage 110 to move, so that the deposition area corresponds to the partial area of the material 113 to be coated that needs to be coated; keeping the positions of the first slide rail 112 and the second slide rail 114 unchanged, rotating the stage 110 to drive the material 113 to be coated to rotate, and controlling the deposition area of the thin film on the surface of the material 113 to be coated by adjusting the rotation angle of the stage 110.

[0118] Depositing a thin film on the surface of the entire area of the material 113 to be coated includes: moving the first slide rail 112 and the second slide rail 114 to drive the stage 110 to move, so that the deposition area covers the entire area surface of the material 113 to be coated.

[0119] In this embodiment, the material 113 to be coated includes: a wafer, and the surface of the wafer has a layer to be repaired. In other embodiments, the material to be coated can be other materials to be coated that need to deposit a thin film and repair the surface.

[0120] In this embodiment, the working method of the coating device further includes: using the heating device 111 to heat the material 113 to be coated on the stage 110 to a preset temperature, so as to provide part of the energy for the deposition reaction, accelerate the film formation rate, and improve the film formation quality.

[0121] In this embodiment, the heating temperature of the heating device 111 is from 0 degrees Celsius to 500 degrees Celsius.

[0122] In other embodiments, heating can be performed without using a heating device.

[0123] In this embodiment, the working method of the coating device further includes: adjusting the rotation speed of the stage 110 at different positions to adjust the residence time of the deposition area on each area of the surface of the material to be coated 113, and controlling the film thickness of each area on the surface of the material to be coated 113.

[0124] In the first embodiment, Figures 1 to 4 The coating device deposits a thin film on the surface of a partial area or the entire area of the material to be coated 113. For the specific description of the coating device, please refer to Figures 1 to 4 the accompanying drawings and written description, which will not be elaborated here.

[0125] In this embodiment, the process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113 includes a chemical vapor deposition process.

[0126] Depositing a thin film on the surface of a partial area or the entire area of the material to be coated further includes: introducing a first gas into the focused ion source 130; ionizing the first gas into a plasma through a radio frequency module to form a focused ion beam 136 that shoots towards the surface of the material to be coated 113 to form a deposition area, and depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113.

[0127] The first gas includes one or more of a reaction gas and a carrier gas. The reaction gas includes methane (CH4), propylene (C3H6), trimethylsilane (3MS), tetraethoxysilane (TEOS), silane (SiH4), titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), hydrogen (H2), ammonia (NH3), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), etc.; the carrier gas includes argon or helium, etc.

[0128] For example, the first gas includes helium and propylene. The process of depositing a thin film on the surface of a partial area of the material to be coated 113 is as follows: The inside of the cavity is evacuated to a vacuum state by a vacuum pump; then the material to be coated 113 loaded on the stage 110 is heated to 300 °C to 500 °C by the heating device 111; then the external gas path 142 is controlled to supply the first gas to the focused ion source 130. After being mixed by a gas mixing module (not shown), the first gas is introduced into the inside of the quartz cup 131 through the first intake pipe 133. The introduction ratio of helium and propylene is 10:1 to 60:1. The radio frequency power supply 141 supplies 400 W to 1000 W of radio frequency energy to the coil 135 through the radio frequency matcher 140 to promote the ionization of the mixed gas of helium and propylene inside the quartz cup 131 to form a plasma; a voltage of 400 V to 600 V and 80 V to 120 V is respectively applied to the screen grid and the acceleration grid of the focused grid 132 through a DC power supply (not shown) to screen and accelerate the plasma formed by ionization inside the quartz cup 131, thereby forming a focused ion beam 136 that shoots towards the surface of the material to be coated 113, forming a deposition area 100( Figure 2 and Figure 3 as shown in), supplemented by the heating of the material to be coated 113 by the heating device 111, to promote the deposition and film formation of helium and propylene ions on the partial area of the surface of the material to be coated 113.

[0129] Please continue to refer to Figure 2 , further, after forming a deposition area 100 on the surface of the material to be coated 113 by using helium and propylene as process gases to form a focused ion beam 136, by moving the first slide rail 112 and the second slide rail 114, the deposition area 100 is made to fall on the position of the edge of the material to be coated 113 as shown in Figure 2 . At this time, the first slide rail 112 and the second slide rail 114 are kept stationary, and the material to be coated 113 is driven by the stage 110 to rotate synchronously. At this time, the deposition area 100 will perform deposition processing on the area on path a to complete the deposition and modification of the edge of the material to be coated 113.

[0130] The residence time of the deposition area 100 at each position can be controlled by adjusting the rotation speed of the stage 110 at different positions, so as to realize the control of the thickness of the deposited thin film. The required residence time can be calculated from the previous value of the initial thin film measured. By controlling appropriate process parameters, the modification of the edge of the material to be coated 113 can finally be completed.

[0131] Please continue to refer to Figure 3, Further, perform full-area shaping on the surface of the material to be coated 113. After forming the focused ion beam 136 with helium and propylene as process gases to form the deposition area 100 on the surface of the material to be coated 113, drive the first slide rail 112 and the second slide rail 114 so that the deposition area 100 enters from any top edge of the material to be coated 113. The processing path can be as shown in path b. The deposition area 100 enters from the upper top edge of the material to be coated 113, and then by driving the second slide rail 114, perform shaping processing on a path of the material to be coated 113 in the second direction Y. Secondly, add the drive of the first slide rail 112 to make the path of the deposition area 100 change lines and turn. Repeat the above operations until the entire surface of the material to be coated 113 is completed with deposition shaping.

[0132] By controlling the required residence time of the deposition area 100, the control of the deposition film thickness in different areas can be achieved. The required residence time for each area can be calculated from the previous value of the initial thin film measured.

[0133] In the second embodiment, use Figure 5 the coating equipment to deposit a thin film on the local area surface or the entire area surface of the material to be coated 113. For the specific description of the coating equipment, please refer to Figure 5 the drawings and text descriptions, which will not be elaborated here.

[0134] In this embodiment, the process of depositing a thin film on the local area surface or the entire area surface of the material to be coated 113 includes a chemical vapor deposition process.

[0135] Depositing a thin film on the local area surface or the entire area surface of the material to be coated 113 includes: introducing a first gas into the focused ion source 130; introducing a second gas into the jet device 210; ionizing the first gas into plasma through the radio frequency module to form a focused ion beam 136 that shoots towards the surface of the material to be coated 113 to form a deposition area 100, and depositing a thin film on the local area surface or the entire area surface of the material to be coated 113 in combination with the second gas.

[0136] The first gas includes one or more of a reaction gas and a carrier gas; the second gas includes one or more of a reaction gas and a carrier gas; the reaction gas includes methane (CH4), propylene (C3H6), trimethylsilane (3MS), tetraethoxysilane (TEOS), silane (SiH4), titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), hydrogen (H2), ammonia (NH3), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), etc.; the carrier gas includes argon or helium, etc.

[0137] The types of the first gas and the second gas are different. In this embodiment, since the first gas and the second gas are gases that are prone to chemical reactions, they are respectively introduced through the first gas inlet pipe 133 and the second gas inlet pipe 212 to avoid the situation where the first gas and the second gas are prone to react in the same gas path.

[0138] For example, the first gas includes nitrous oxide, and the second gas includes silane. The process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113 is as follows: The inside of the cavity is evacuated to a vacuum state by a vacuum pump; the heating device 111 heats the material to be coated 113 loaded on the stage 110 to 300 degrees Celsius to 500 degrees Celsius; the external gas path 142 supplies the first gas nitrous oxide to the focused ion source 130 and the second gas silane to the gas jet device 210. The first gas N2O is introduced into the interior of the quartz cup 131 through the first gas inlet pipe 133. The radio frequency power supply 141 supplies 100 W to 1000 W of radio frequency energy to the coil 135 through the radio frequency matcher 140 to promote the ionization of N2O inside the quartz cup 131 to form a plasma; a DC power supply (not shown) applies voltages of 400 V to 600 V and 80 V to 120 V to the screen grid and the acceleration grid of the focusing grid 132 respectively, which are used to screen and accelerate the plasma formed by ionization inside the quartz cup 131, so as to form a focused ion beam 136 that shoots towards the surface of the material to be coated 113, forming a deposition area 100 ( Figure 2 and Figure 3 as shown in); the gas jet device 210 sprays the second gas silane towards the position of the deposition area 100, assisted by the heating of the material to be coated 113 by the heating device 111, to promote the deposition of a SiO2 thin film on the surface of a partial area of the material to be coated 113.

[0139] By planning the movement path of the deposition area 100 on the surface of the material to be coated 113, coordinating the movement of the first slide rail 112 and the second slide rail 114 and the rotation of the stage 110, local deposition shaping (refer to Figure 2 ) and full deposition shaping (refer to Figure 3 ) of the surface of the material to be coated 113 are realized.

[0140] In the third embodiment, the coating equipment of Figure 6 and Figure 7 is used to deposit a thin film on the surface of a partial area or the entire area of the material to be coated 113. For the specific description of the coating equipment, please refer to the drawings and text descriptions of Figure 5 and Figure 6 , which will not be elaborated here.

[0141] In this embodiment, the process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113 includes a physical vapor deposition process.

[0142] Depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113, including: rotating the rotating rod 231 to drive the target base 232 and the target 233 to rotate around the first direction X, so that the target 233 reaches a preset position; rotating the connecting rod 137 to drive the focused ion source 130 to rotate around the first direction X, so that the focused ion source 130 reaches a preset position; introducing a first gas into the focused ion source 130; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam 136 that shoots towards the surface of the target 233, bombarding to form sputtering ions that shoot towards the material to be coated 113, forming a deposition area.

[0143] The materials of the target 233 include: alumina, carbon, silicon nitride compounds or metals, etc., and the metals include aluminum.

[0144] The first gas includes inert gases, and the inert gases include argon or helium.

[0145] For example, when the first gas includes argon, the process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113 is as follows: controlling the rotation angles of the focused ion source 130 and the target assembly 230, adjusting the two to preset positions, the focused ion source 130 emits a focused ion beam 136 to bombard the surface of the target 233, forming sputtering particles 240 that shoot towards the surface of the partial material to be coated 113, forming a deposition area 100, and realizing local deposition on the surface of the material to be coated 113.

[0146] By planning the movement path of the deposition area 100 on the surface of the material to be coated 113, coordinating with the movement of the first slide rail 112 and the second slide rail 114 and the rotation of the stage 110, local shaping (refer to Figure 2 ) and overall shaping (refer to Figure 3 ) of the surface of the material to be coated 113 are realized.

[0147] In the fourth embodiment, the coating equipment of Figure 8 and Figure 9 is used to deposit a thin film on the surface of a partial area or the entire area of the material to be coated 113. For the specific description of the coating equipment, please refer to the drawings and text descriptions of Figure 8 and Figure 9 , which will not be elaborated here.

[0148] In this embodiment, the process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated 113 includes a chemical vapor deposition process.

[0149] The difference between the working method of the coating equipment in the fourth embodiment and the working method of the coating equipment in the first embodiment is that: it further includes: rotating the rotating shaft to drive the stage 110 to rotate around the first direction X, so that the stage 110 rotates to a preset angle.

[0150] One case is that one end of the connecting rod 137 is fixedly connected to the third slide rail 138, and the connecting rod 137 cannot drive the focused ion source 130 to rotate around the first direction X. The stage is driven to rotate around the first direction X by rotating the rotating shaft.

[0151] Another case is that one end of the connecting rod 137 is connected to the third slide rail 138, and the connecting rod 137 can drive the focused ion source 130 to rotate around the first direction X; and the rotating shaft can drive the stage 110 to rotate around the first direction X.

[0152] Figure 11 and Figure 12 is a schematic diagram of the formation process of a semiconductor structure in an embodiment of the present invention.

[0153] Please refer to Figure 11 to provide the layer to be coated.

[0154] In this embodiment, the layer to be coated includes: a substrate 300 and a layer to be repaired 301 located on the substrate 300. The layer to be repaired 301 includes a defect area A, and the film thickness of the defect area A is lower or higher than the average film thickness of the layer to be repaired 301.

[0155] In this embodiment, the defect area A is located in the area around the edge of the substrate 300.

[0156] In this embodiment, the material of the substrate 300 is silicon.

[0157] In other embodiments, the material of the substrate includes silicon carbide, silicon germanium, a multi-semiconductor material composed of group III-V elements, silicon on insulator (SOI) or germanium on insulator (GOI). Among them, the multi-semiconductor material composed of group III-V elements includes InP, GaAs, GaP, InAs, InSb, InGaAs or InGaAsP.

[0158] In other embodiments, the layer to be coated is other materials that need to be coated and shaped.

[0159] Please refer to Figure 12 to deposit a thin film layer on the surface of a local area of the layer to be coated by using a coating device.

[0160] The coating device includes: Figures 1 to 4 coating device of Figure 5 coating device of Figure 6 and Figure 7 coating device of Figure 8 and Figure 9 coating device of.

[0161] Deposit a thin film layer on the surface of a partial area of the layer to be coated, including: deposit a thin film layer 302 in the defect area A of the layer to be coated, and the average film thickness of the thin film layer 302 and the layer 301 to be repaired is within a preset range.

[0162] The average film thickness of the thin film layer 302 and the layer 301 to be repaired is within a preset range, that is, the surface of the layer to be coated after depositing the thin film layer 302 basically meets the requirements of surface flatness.

[0163] In another embodiment, deposit a thin film layer on the surface of a partial area of the layer to be coated, including: deposit a thin film layer with a preset thickness on the surface of a partial area of the layer to be coated.

[0164] In this embodiment, for the process of repairing the defect area A in the edge area of the layer to be coated, please refer to Figure 2 the accompanying drawings and written descriptions.

[0165] In this embodiment, the material of the thin film layer 302 is the same as that of the layer 301 to be repaired.

[0166] The process of forming the thin film layer 302 includes physical vapor deposition process or chemical vapor deposition process.

[0167] The process gases for the chemical vapor deposition process include one or more of reaction gases and carrier gases. The reaction gases include methane (CH4), propylene (C3H6), trimethylsilane (3MS), tetraethyl orthosilicate (TEOS), silane (SiH4), titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), hydrogen (H2), ammonia (NH3), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), etc.; the carrier gases include argon or helium, etc.

[0168] The process parameters of the physical vapor deposition process include: the target material includes alumina, carbon, silicon nitride compound or metal, and the metal includes aluminum; the reaction gas includes inert gas, and the inert gas includes argon or helium.

[0169] The material of the thin film layer 302 includes silicon oxide, silicon nitride, etc., including the film layers formed by the above chemical vapor deposition process and physical vapor deposition process.

[0170] Use a coating device to deposit a thin film on the surface of a partial area or the entire area of the layer to be coated, so as to deposit a thin film on a partial area or the entire area of the surface of the layer to be coated, improve the yield and availability of the layer to be coated, and save production costs.

[0171] Figures 13 to 16 It is a schematic diagram of the formation process of a semiconductor structure in another embodiment of the present invention.

[0172] Please refer to Figure 13 , and provide the layer to be coated.

[0173] In this embodiment, the layer to be coated includes: a substrate 400 and a layer to be repaired 401 located on the substrate 400. The layer to be repaired 401 includes a plurality of defect regions, and the film thickness of the defect regions is lower than or higher than the average film thickness of the layer to be repaired 401.

[0174] In this embodiment, the surface of the layer to be repaired 401 is an uneven surface, and the defect regions cover the entire surface of the layer to be repaired 401.

[0175] In this embodiment, the material of the substrate 400 is silicon.

[0176] In other embodiments, the material of the substrate includes silicon carbide, silicon germanium, a multi-element semiconductor material composed of group III-V elements, silicon on insulator (SOI), or germanium on insulator (GOI). Among them, the multi-element semiconductor material composed of group III-V elements includes InP, GaAs, GaP, InAs, InSb, InGaAs, or InGaAsP.

[0177] In other embodiments, the layer to be coated is other materials that need to be coated and shaped.

[0178] Please refer to Figure 14 , and use a coating device to deposit a thin film layer 402 on the entire surface of the layer to be coated.

[0179] The coating device includes: Figures 1 to 4 coating device, Figure 5 coating device, Figure 6 and Figure 7 coating device or Figure 8 and Figure 9 coating device.

[0180] The process for forming the thin film layer 302 includes a physical vapor deposition process or a chemical vapor deposition process.

[0181] The process gases for the chemical vapor deposition process include one or more of reaction gases and carrier gases. The reaction gases include methane (CH4), propylene (C3H6), trimethylsilane (3MS), tetraethyl orthosilicate (TEOS), silane (SiH4), titanium tetrachloride (TiCl4), tungsten hexafluoride (WF6), hydrogen (H2), ammonia (NH3), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), etc.; the carrier gases include argon or helium, etc.

[0182] The process parameters for the physical vapor deposition process include: the target material includes alumina, carbon, silicon nitride compounds, or metals, and the metals include aluminum; the reaction gases include inert gases, and the inert gases include argon or helium.

[0183] The materials of the thin film layer 302 include silicon oxide, silicon nitride, etc., including the film layers formed by the above chemical vapor deposition process and physical vapor deposition process.

[0184] In one embodiment, the material of the thin film layer 402 is the same as that of the layer to be repaired 401.

[0185] Deposit a thin film layer on the entire surface area of the layer to be coated, including: forming a thin film layer 402 on the surface of the layer to be coated, and the top surface of the thin film layer 402 is higher than the top surface of the layer to be repaired 401.

[0186] At this time, use a coating device to deposit thin film layers 402 with different thicknesses in each area, so that the surface of the thin film layer 402 is a flat surface, so as to achieve the purpose of shaping the layer to be repaired 401, improving the yield and availability of the layer to be coated, and saving production costs.

[0187] In another embodiment, the material of the thin film layer 402 is the same as that of the layer to be repaired 401.

[0188] Please refer to Figure 15 and Figure 16 , Figure 15 For the schematic diagram based on Figure 14 , etch the thin film layer 402 and the layer to be repaired 401 until the layer to be coated reaches a thickness within a predetermined range to form a repair layer 403.

[0189] The surface of the repair layer 403 is a flat surface. First, use a coating device to deposit a thin film layer 402 on the flat surface, and then remove the defective areas of the thin film layer 402 and the layer to be repaired 401 to form a repair layer 403 with a flat surface, so as to achieve the purpose of shaping the layer to be repaired 401, improving the yield and availability of the layer to be coated, and saving production costs.

[0190] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A coating device, characterized in that, Comprising: A cavity, the cavity including a first part and a second part connected to each other, and the first part and the second part forming a sealed cavity after being closed; A stage disposed at the bottom of the second part, the stage being used for placing the material to be coated, the stage being movable along a first direction and a second direction, the first direction and the second direction being parallel to the bottom surface of the cavity, and the first direction and the second direction being perpendicular to each other; A focused ion source disposed in the first part, the focused ion source being used for emitting a focused ion beam to the surface of the material to be coated on the stage, the focused ion source being disposed opposite to the stage, the focused ion source being movable up and down along a third direction, and the third direction being perpendicular to the first direction and the second direction.

2. The coating device according to claim 1, wherein Further comprising: A slide rail device disposed at the bottom of the second part, the stage being disposed on the slide rail device, and the stage being movable along the first direction and the second direction through the slide rail device.

3. The coating device according to claim 2, characterized in that The slide rail device includes: a first slide rail fixed to the bottom of the second part, and a second slide rail disposed on the first slide rail, the stage being disposed on the second slide rail, the extending direction of the first slide rail being parallel to the first direction, and the extending direction of the second slide rail being parallel to the second direction; the stage being movable along the second direction through the second slide rail, and the second slide rail and the stage being movable along the first direction through the first slide rail.

4. The coating device according to claim 1, wherein, The focused ion source is rotatable around the first direction.

5. The coating device according to claim 4, characterized in that, The stage is rotatable around the first direction; the focused ion source and the stage are relatively rotatable around the first direction.

6. The coating device according to claim 1, characterized in that, Further comprising: A third slide rail disposed on the inner wall of the first part; a connecting rod, one end of the connecting rod being connected to the third slide rail, and the other end of the connecting rod being fixedly connected to the focused ion source, the extending direction of the third slide rail being parallel to the third direction, and the focused ion source being movable up and down along the third direction through the third slide rail.

7. The coating device according to claim 4, wherein Further comprising: A target assembly disposed between the focused ion source and the stage, the target assembly being used for forming sputtering ions to deposit on the surface of the material to be coated placed on the stage after being bombarded by the focused ion source.

8. The coating equipment according to claim 7, characterized in that, The target assembly includes: a target base, a rotating rod, and a target, the target being fixedly installed on the target base, one end of the rotating rod being movably connected to the target base, the other end of the rotating rod being connected to the first part, and the rotating rod being capable of driving the target base and the target to rotate around the first direction.

9. The coating equipment according to claim 8, wherein, The distance between the target and the material to be coated placed on the surface of the stage ranges from 20 millimeters to 50 millimeters.

10. The coating device according to claim 1, characterized in that, Further comprising: A heating device disposed in the stage, the heating device being capable of heating the material to be coated placed on the surface of the stage.

11. The coating device according to claim 1, characterized in that, The focused ion source includes: a housing; a quartz cup embedded in the housing, the quartz cup including a cup mouth and a cup bottom, the cup mouth facing the stage, and the housing exposing the cup mouth of the quartz cup; a focusing grid disposed at the cup mouth of the quartz cup; a coil disposed between the side wall of the quartz cup and the housing; a first intake pipe passing through the housing and the cup bottom of the quartz cup, the first intake pipe being connected to an external gas path, and the first intake pipe being configured to introduce a first gas into the quartz cup.

12. The coating equipment according to claim 11, wherein It further includes: A jetting device disposed on the side wall of the housing outside the focusing grid, the jetting device including a jet nozzle, and the jet nozzle being configured to jet a second gas into a deposition area where the focused ion beam intersects with the material to be coated.

13. The coating equipment according to claim 12, characterized in that, It further includes: A second intake pipe connected to the jetting device, the second intake pipe being connected to an external gas path, and the second intake pipe being configured to introduce a second gas into the jetting device.

14. The coating equipment according to claim 11, wherein, The cup mouth of the quartz cup faces the stage, and the distance range between the cup mouth of the quartz cup and the material to be coated on the stage is: 60 millimeters to 150 millimeters.

15. The coating device according to claim 1, wherein It further includes: A fixing component fixed on the surface of the stage, the material to be coated being fixed on the stage through the fixing component, and the stage being capable of driving the fixing component and the material to be coated to rotate around a third direction.

16. A working method of a coating device, characterized in that, It includes: Providing a coating device as described in any one of claims 1 to 15; Providing a material to be coated and placing it on the stage; Setting the positions of the stage and the focused ion source; Depositing a thin film on the surface of a partial area or the entire area of the material to be coated according to the mutual cooperation of the stage position and the focused ion source position.

17. The working method of the coating equipment according to claim 16, characterized in that, Depositing a thin film on the surface of a partial area of the material to be coated includes: moving the first slide rail and the second slide rail to drive the stage to move, so that the deposition area corresponds to the partial area of the material to be coated that needs to be coated, and adjusting the residence time of the deposition area in each area on the surface of the material to be coated by controlling the moving speeds of the stage in the first direction and the second direction, thereby controlling the film thickness of each area on the surface of the material to be coated; or keeping the positions of the first slide rail and the second slide rail unchanged, rotating the stage to drive the material to be coated to rotate, controlling the deposition area of the thin film on the surface of the material to be coated by adjusting the rotation angle of the stage, and adjusting the rotation speed of the stage at different positions to adjust the residence time of the deposition area in each area on the surface of the material to be coated, thereby controlling the film thickness of each area on the surface of the material to be coated.

18. The working method of the coating device according to claim 16, characterized in that, Depositing a thin film on the surface of the entire area of the material to be coated includes: moving the first slide rail and the second slide rail to drive the stage to move, so that the deposition area covers the entire area surface of the material to be coated.

19. The working method of the coating equipment according to claim 17 or 18, characterized in that, It further includes: Using a heating device to heat the material to be coated on the stage to a preset temperature.

20. The working method of the coating equipment according to claim 17 or 18, characterized in that, The process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes a chemical vapor deposition process.

21. The working method of the coating equipment according to claim 20, characterized in that, Depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes: introducing a first gas into the focused ion source; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam that shoots towards the surface of the material to be coated to form a deposition area, and depositing a thin film on the surface of a partial area or the entire area of the material to be coated.

22. The working method of the coating equipment according to claim 21, characterized in that, The first gas includes one or more of a reactive gas and a carrier gas. The reactive gas includes methane, propylene, trimethylsilane, tetraethoxysilane, silane, titanium tetrachloride, tungsten hexafluoride, hydrogen, ammonia, nitrogen, nitrous oxide, or oxygen. The carrier gas includes argon or helium.

23. The working method of the coating device according to claim 20, characterized in that, Depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes: introducing a first gas into the focused ion source; introducing a second gas into a jet device; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam that shoots towards the surface of the material to be coated to form a deposition area, and depositing a thin film on the surface of a partial area or the entire area of the material to be coated in combination with the second gas.

24. The working method of the coating equipment according to claim 23, characterized in that, The first gas includes one or more of a reactive gas and a carrier gas; the second gas includes one or more of a reactive gas and a carrier gas; the reactive gas includes methane, propylene, trimethylsilane, tetraethoxysilane, silane, titanium tetrachloride, tungsten hexafluoride, hydrogen, ammonia, nitrogen, nitrous oxide, or oxygen; the carrier gas includes argon or helium.

25. The working method of the coating equipment according to claim 24, characterized in that, The types of the first gas and the second gas are different.

26. The working method of the coating device according to claim 17 or 18, characterized in that, The process of depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes a physical vapor deposition process.

27. The working method of the coating equipment according to claim 26, characterized in that, Depositing a thin film on the surface of a partial area or the entire area of the material to be coated includes: rotating a rotating rod to drive a target base and a target to rotate around a first direction, so that the target reaches a preset position; rotating a connecting rod to drive the focused ion source to rotate around the first direction, so that the focused ion source reaches a preset position; introducing a first gas into the focused ion source; ionizing the first gas into plasma through a radio frequency module to form a focused ion beam that shoots towards the surface of the target, bombarding to form sputtering ions that shoot towards the material to be coated to form a deposition area.

28. A method for forming a semiconductor structure, characterized in that, Including: Providing a layer to be coated; Using the coating device according to any one of claims 1 to 15 to deposit a thin film layer on the surface of a partial area or the entire area of the layer to be coated.

29. The method for forming a semiconductor structure as claimed in claim 28, wherein, The layer to be coated includes: a substrate and a layer to be repaired located on the substrate. The layer to be repaired includes a defective area, and the film thickness of the defective area is lower or higher than the average film thickness of the layer to be repaired.

30. The method for forming a semiconductor structure as described in claim 29, wherein, Depositing a thin film layer on the surface of a partial area of the layer to be coated includes: using a deposition process to deposit a thin film layer in the defective area of the layer to be coated, and the average film thickness of the thin film layer and the layer to be repaired is within a preset range.

31. The method for forming a semiconductor structure according to claim 29, wherein, Depositing a thin film layer on the surface of the entire area of the layer to be coated includes: using a deposition process to form the thin film layer on the surface of the layer to be coated, and the top surface of the thin film layer is higher than the top surface of the layer to be repaired.

32. The method for forming a semiconductor structure according to claim 30, wherein, The deposition process includes a physical vapor deposition process or a chemical vapor deposition process.

33. The method for forming a semiconductor structure according to claim 31, wherein, The material of the thin film layer is the same as that of the layer to be repaired, or the material of the thin film layer is different from that of the layer to be repaired.

34. The method for forming a semiconductor structure according to claim 31, wherein, Further included is: Etching the thin film layer and the layer to be repaired until the layer to be coated reaches a thickness within a predetermined range.

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