System and method for removing resin coating deposited on metallic components

Abstract

A method of removing an atomic layer deposition (ALD) coating from a metallic component comprising titanium is provided. A system for facilitating a process of removing an unintentional residual ALD coating on a metallic component is also disclosed. Pretreatment of the metallic component comprising the residual coating provides a larger surface area for the chemical undercut. Further, immersing the metallic component in a cleaning chemical solution and agitating the cleaning chemical solution accelerates the reaction between the cleaning chemical solution and the coating, thereby removing the residual coating without etching the metallic core of the metallic component.

Description

Technical Field

[0001] The present disclosure relates to methods and apparatuses for manufacturing electronic devices. More specifically, the present disclosure relates to systems and methods for removing atomic layer deposition coatings on metallic components during processing. Background Art

[0002] In the manufacture of integrated devices, thin layers are deposited or formed on a substrate in a reaction chamber or reactor, for example, by chemical vapor deposition (CVD) or atomic layer deposition (ALD). During these deposition processes, the deposited layer is also deposited on other surfaces, such as components inside the reaction chamber, the walls of the reaction chamber, and other exposed (e.g., wetted) surfaces within the reaction chamber. Over time, these layers, commonly referred to as "parasitic layers," accumulate and build up, and eventually flakes, falls off, and / or strips particles from the wetted surfaces within the reaction chamber. Particles that land on the substrate surface (e.g., land on the surface or are carried by the gas flow) can cause problems in the manufacturing process, such as reducing the yield and / or reproducibility of the process. Periodically removing contaminants from the reaction chamber can reduce these problems.

[0003] One way to clean the components within the reaction chamber is through an in-situ etching cycle using one or more suitable etchant cleaning cycles. However, in some cases, in-situ etching exhibits one or more drawbacks, such as significantly etching the components within the reaction chamber. Thus, in some cases, in-situ cleaning is not feasible.

[0004] Another option for cleaning the components within the reaction chamber is non-in-situ cleaning, where the contaminated components are removed from maintenance for cleaning. "Shot peening" is a form of non-in-situ cleaning by mechanical abrasion, where an abrasive stream of, for example, alumina, zirconia, glass, silica, silicon carbide (SiC), or other suitable materials impacts the surface to be cleaned, for example, using a high-pressure fluid stream. Shot peening has several drawbacks, such as the cleaning process can damage the reaction chamber components, thereby reducing their lifespan. Shot peening is a "line-of-sight" process, making it difficult to clean high aspect ratio components. Since the removal of contaminants cannot be visually monitored, the endpoint is not obvious, and thus when the contaminants are removed and reach the underlying material; there is a possibility of missing contaminated areas. Shot peening also causes contamination of the cleaned parts with the abrasive material. Contaminants that are as hard as or harder than the abrasive material are not easily removed by shot peening. Shot peening also incurs excessive costs and low reproducibility. Therefore, there is a need for improved components within the reaction chamber, as well as methods for forming and utilizing the improved components.

[0005] Any discussion set forth in this section, including discussions of problems and solutions, has been included in the present disclosure solely to provide background for the present disclosure. Such discussion should not be construed as an admission that any or all of the information was known at the time the invention was made or constitutes prior art. Summary of the Invention

[0006] The summary of the invention may introduce some concepts in a simplified form, which will be described in further detail below. The summary of the invention is not intended to necessarily identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0007] A method for removing an atomic layer deposition (ALD) coating from a metallic component containing titanium is provided. The method includes: pre-treating the metallic component containing a residual coating to provide a larger surface area for chemical undercutting; immersing the metallic component in a cleaning chemical solution; and agitating the cleaning chemical solution to accelerate the reaction between the cleaning chemical solution and the residual coating.

[0008] In some embodiments, pre-treating the metallic component further includes performing at least one of a thermal shock, a laser scribing, a mechanical scribing, and a high-pressure spraying process.

[0009] In some embodiments, agitating the cleaning chemical solution further includes: starting cyclic pressurization at a first pressure value; changing the pressure of the cleaning chemical solution until the first pressure value equals a second pressure value; changing the pressure of the cleaning chemical solution until the second pressure value equals the first pressure value; oscillating a determined number of cycles between the first pressure value and the second pressure value; and removing the metallic component from the cleaning chemical solution after completing the determined number of cycles.

[0010] In some embodiments, the method further includes: soaking the metallic component in the cleaning chemical solution for a given duration after the cleaning chemical solution reaches the second pressure value; and soaking the metallic component in the cleaning chemical solution for a given duration after the cleaning chemical solution reaches the first pressure value.

[0011] In some embodiments, the difference between the first pressure value and the second pressure value is 300 pounds per square inch (PSI).

[0012] In some embodiments, changing the pressure of the cleaning chemical solution includes changing the temperature of the cleaning chemical solution.

[0013] In some embodiments, cyclic pressurization further includes dissolving a gaseous component in the cleaning chemical solution to affect the pressure of the cleaning chemical solution.

[0014] In some embodiments, agitating the cleaning chemical solution further includes at least one of ultrasonic treatment, jetting, and circulating the cleaning chemical solution.

[0015] In some embodiments, circulating further includes using an injector nozzle to increase the flow rate of the cleaning chemical solution.

[0016] In some embodiments, the method further includes post - processing the metallic component by performing at least one of power washing, chemical dipping, and scrubbing to remove by - products remaining from the reaction between the cleaning chemical solution and the metallic component.

[0017] In some embodiments, the method further includes: removing the metallic component from the cleaning chemical solution after agitation; inspecting the metallic component to determine whether any residual coating remains deposited on the metallic component; and when it is determined that the residual coating remains deposited on the metallic component, immersing the metallic component in the cleaning chemical solution and agitating the metallic component.

[0018] In some embodiments, agitating the cleaning chemical solution further includes heating the cleaning chemical solution to the boiling point of the cleaning chemical solution.

[0019] In some embodiments, the cleaning chemical solution is an alkaline cleaning chemical solution.

[0020] A cleaning system is provided, the cleaning system includes: a pretreatment component, where the pretreatment component is configured to create a scribe - line boundary on a metallic component, where the metallic component includes a residual coating remaining from a previous deposition process. The cleaning system further includes a cleaning device coupled to the pretreatment component, where the cleaning device further includes a pressure vessel and a cleaning chemical solution, where the cleaning chemical solution fills at least a portion of the pressure vessel, and where the cleaning chemical solution is configured to react with the residual coating of the metallic component and remove the residual coating from the metallic component. The cleaning system further includes an inspection component coupled to the cleaning device, where the inspection component is configured to determine whether the residual coating remains deposited on the metallic component after the pretreatment and cleaning processes.

[0021] In some embodiments, the pretreatment component is configured to perform at least one of a thermal shock, laser scribing, mechanical scribing, and high - pressure spraying process.

[0022] In some embodiments, the cleaning chemical solution includes an alkaline cleaning chemical solution.

[0023] In some embodiments, the cleaning device further includes a pressure control device, where the pressure control device is configured to fluctuate the pressure within the pressure vessel between a starting pressure value and a desired pressure value in a determined number of cycles.

[0024] In some embodiments, the cleaning system further includes a post - processing component, where the post - processing component is configured to remove by - products remaining on the metallic component after the reaction between the cleaning chemical solution and the residual coating.

[0025] In some embodiments, the post - processing component is configured to perform at least one of a power washing, chemical dipping, and scrubbing process.

[0026] A cleaning device is provided, the cleaning device comprising: a pressure vessel; a cleaning chemical solution enclosed within the pressure vessel; a metallic component having a residual coating, wherein the metallic component is immersed in the cleaning chemical solution; wherein the pressure vessel is configured to oscillate the pressure within the pressure vessel between a first pressure value and a second pressure value; and wherein the cleaning chemical solution is configured to etch the residual coating.

[0027] The following detailed description of certain embodiments with reference to the accompanying drawings will make these and other embodiments apparent to those skilled in the art. The present disclosure is not limited to any particular embodiment disclosed. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] A more complete understanding of the embodiments of the present disclosure can be obtained by reference to the detailed description and the claims when considered in conjunction with the following illustrative drawings.

[0029] Figure 1 A metallic component having a residual coating in accordance with an exemplary embodiment of the present disclosure is shown.

[0030] Figure 2 A metallic component having a fault line boundary in accordance with an exemplary embodiment of the present disclosure is shown.

[0031] Figure 3 A cleaning device in accordance with an exemplary embodiment of the present disclosure is shown.

[0032] Figure 4 A cleaned metallic core in accordance with an exemplary embodiment of the present disclosure is shown.

[0033] Figure 5 A cleaning system in accordance with an exemplary embodiment of the present disclosure is shown.

[0034] Figure 6 A method of removing a residual coating deposited on a metallic component during processing in accordance with an exemplary embodiment of the present disclosure is shown.

[0035] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in improving understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0036] The following description of exemplary embodiments of the methods and structures provided is merely exemplary and for illustrative purposes only. The following description is not intended to limit the scope of the present disclosure or the claims. In addition, the recitation of multiple embodiments having the noted features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments incorporating different combinations of the recited features or steps.

[0037] As described in more detail below, various embodiments of the present disclosure provide systems and methods for removing parasitic layers inadvertently deposited on metallic components (e.g., substrates) during wafer processing. A protective layer has been deposited on the metallic component to act as an etch stop layer to prevent the metallic core beneath the component from being etched during the removal of the parasitic layer. According to further examples of the present disclosure, the protective layer of the present disclosure can act as a sacrificial layer such that the protective layer is selectively removed without damaging the underlying metallic core, and by removing the protective layer, the parasitic layer deposited thereon is stripped and also removed from the metallic core of the component.

[0038] As used herein, the term "substrate" can refer to any one or more underlying materials that can be used to form or on which a device, circuit, or film can be formed. The substrate can include bulk materials such as silicon (e.g., single-crystalline silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or III-V semiconductor materials, and can include one or more layers covering or underlying the bulk material. Additionally, the substrate can include various features such as depressions, protrusions, etc. formed within or on at least a portion of the substrate layer. By way of example, the substrate can include a semiconductor material. The semiconductor material can include or be used to form one or more of the source, drain, or channel regions of a device. The substrate can also include an interlayer dielectric (e.g., silicon oxide) and / or a high dielectric constant material layer covering the semiconductor material. In this document, a high dielectric constant material or high-k dielectric material is a material having a dielectric constant greater than that of silicon dioxide.

[0039] As used herein, the terms film and / or layer can refer to any continuous or discontinuous structure and material, such as materials deposited by the methods disclosed herein. For example, a film and / or layer can include two-dimensional materials, three-dimensional materials, nanoparticles, partial or full molecular layers, or partial or full atomic layers, or atomic and / or molecular clusters. A film or layer can be composed in part or in whole of a plurality of dispersed atoms on the surface of the substrate and / or embedded within the substrate and / or embedded within a device fabricated on the substrate. A film or layer can include materials or layers having pinholes and / or islands. A film or layer can be at least partially continuous. A film or layer can be patterned, e.g., subdivided, and can be included by a plurality of semiconductor devices.

[0040] In addition, in the present disclosure, any two numbers of a variable can form a viable range of the variable, and any indicated range can include or exclude endpoints. Further, any value of a variable indicated (whether or not expressed with the term "about") can refer to an exact value or an approximate value, and includes equivalents, and can refer to an average value, a median value, a representative value, a majority value, etc. In addition, in the present disclosure, the terms include, consist of, and have independently in some embodiments refer to generally or broadly include, contain, consist essentially of, or consist of. In the present disclosure, the meaning of any defined term does not necessarily exclude the ordinary and customary meaning in some embodiments.

[0041] Now referring to Figure 1 , a cross-sectional view of a structure 100 including a metallic core 102 is shown according to an example of the present disclosure. The metallic core 102 includes a non-planar surface 104 that includes a plurality of features such as raised features 106 and recessed features 108. According to an example of the present disclosure, the metallic core 102 can include a single-component part or a multi-component part made of one or more metallic materials. For example, the metallic core 102 can be made of a material selected from titanium, titanium alloys, nickel alloys (including superalloys), stainless steel, and aluminum. As a non-limiting example, the metallic core 102 can include a non-alloy titanium material that includes pure non-alloy titanium metal and has a composition including less than 0.05 atomic percent (at%) of nitrogen (N2), less than 0.08 at% of carbon (C), less than 0.015 at% of hydrogen (H2), less than 0.50 at% of iron (Fe), and less than 0.40 at% of oxygen (O2). In a further example, the metallic core 102 can include a nickel-based superalloy such as those commonly sold under the trademarks Haynes™, Hastelloy™, and Inconel™.

[0042] According to an example of the present disclosure, the metallic core 102 can include a plurality of components that can be used in a wetting area within a reaction chamber, such as but not limited to a substrate support assembly, an electrostatic chuck (ESC), a process ring, a chamber wall, a pedestal, a showerhead, a gas distribution plate, a panel, a liner, a gas line, a shield, a remote plasma source, a flow controller, a flow equalizer, a cooling pedestal, a chamber viewing port, a chamber lid, a nozzle, etc. In an example embodiment, the structure 100 is included in a semiconductor processing system (such as Figure 5 semiconductor processing system 504). More specifically, in an example embodiment, the structure 100 can be included in a reaction chamber of a semiconductor processing system.

[0043] As Figure 1As shown, the metallic core 102 includes a non-planar surface 104. The non-planar surface 104 of the metallic core 102 may include at least one of nickel, copper, cobalt, chromium, molybdenum, stainless steel, ruthenium, tungsten, platinum, titanium, aluminum, or a mixture thereof. The non-planar surface 104 should not be construed as limited to this list. Other metallic surfaces that may have a naturally occurring native metal oxide or that can readily form a metal oxide when exposed to certain oxidants (such as ozone, water, oxygen) may be suitably used herein as the non-planar surface 104.

[0044] According to an example of the present disclosure, the non-planar surface 104 may include a plurality of non-planar features, such as one or more raised features 106 and / or one or more recessed features 108. For example, the raised features 106 and the recessed features 108 may include features above and below the main plane 112 of the metallic core 102, respectively.

[0045] Figure 1 Exemplary raised features 106 and exemplary recessed features 108 are shown, where both exemplary non-planar features have a vertical surface 114 and a horizontal surface 116. It should be noted that the vertical surface 114 is not necessarily absolutely vertical (i.e., the vertical surface 114 does not necessarily need to be at 90° to the main plane 112). Similarly, the horizontal surface 116 is not necessarily absolutely horizontal (i.e., the horizontal surface 116 does not necessarily need to be at 0° (e.g., parallel) to the main plane 112).

[0046] According to an example of the present disclosure, the raised / recessed features (106, 108) may have the following heights / depths: greater than 1 µm, greater than 10 µm, greater than 50 µm, greater than 100 µm, greater than 250 µm, greater than 500 µm, greater than 750 µm, greater than 1000 µm, or between 1 µm and 1000 µm. Additionally, the raised / recessed features (106, 108) may have the following heights / depths: greater than 1 mm, greater than 2 mm, greater than 3 mm, greater than 4 mm, greater than 5 mm, greater than 10 mm, greater than 20 mm, greater than 30 mm, greater than 50 mm, greater than 100 mm, or between 1 mm and 100 mm.

[0047] According to an example of the present disclosure, the raised features 106 and the recessed features 108 may include high aspect ratio features. Such high aspect ratio features may have an aspect ratio (height:width) that can be greater than 2:1, or greater than 5:1, or greater than 10:1, or greater than 25:1, or greater than 50:1, or even greater than 100:1, where "greater than" as used in this example refers to the greater distance of the height (or depth) of the feature.

[0048] According to examples of the present disclosure, non-planar features (e.g., 106 and 108) may include, but are not limited to, pillars, pins, columns, holes, holes, through-holes, channels, etc. In an exemplary embodiment, raised features 106 may include vertical pins protruding from a surface of a metallic core comprising a substrate support assembly. In further exemplary embodiments, recessed features 108 may include holes recessed into a surface of a metallic core comprising a gas distribution plate.

[0049] In addition, if Figure 1 As shown, the surface of the metallic core 102 is covered with a residual coating 120. The residual coating 120 may be included in a semiconductor processing system (e.g., as described below). Figure 5 The metal oxide layer remaining on the metallic core 102 after processing in the reaction chamber of the exemplary semiconductor processing system 504 shown and described. That is, the deposition of the metal oxide on the substrate may inadvertently form a parasitic layer on the metallic core 102. In an exemplary embodiment, the parasitic layer may include hafnium oxide. Therefore, the residual coating 120 may include a metal oxide parasitic layer formed on the metallic core 102.

[0050] In addition, in an example embodiment, the residual coating 120 may further include a protective layer (not shown). The metallic components of the metallic core 102 may have etching characteristics similar to the parasitic layer, making the selective removal of the parasitic layer more complicated. Therefore, a protective layer may be provided on the metallic core 102 to prevent etching of the metallic core 102 below during the removal of the parasitic layer. The protective layer has properties different from those of the metallic core 102 below, so when the protective layer is removed, the parasitic layer is also removed, thereby minimizing damage to any part of the metallic core 102. Further information on the uses and properties of the protective layer is described in U.S. Patent Application No. 63 / 529,861, entitled “ProtectedMetallic Components, Reaction Chambers Including Protected MetallicComponents, and Methods for Forming and Utilizing Protected MetallicComponents” filed on July 31, 2023, the entire contents of which are incorporated herein by reference.

[0051] According to an example of the present disclosure, the protective layer comprises a material selected from metals, metal oxides, and metal carbides. As used herein, the term "metal" refers to metallic elements (such as aluminum, zirconium, etc.) and metalloid elements (such as silicon). In a further example, the protective layer may comprise a material that does not contain metallic elements. In a further example, the protective layer may comprise a polymer, such as a fluoropolymer. According to an example of the present disclosure, the protective layer may comprise a metal oxide selected from alumina, zirconia, and tantalum oxide. Thus, the residual coating 120 comprises a parasitic coating (such as hafnium oxide) and a protective coating (such as alumina).

[0052] Now referring to Figure 2 , a cross-sectional view of the pre-treatment structure 200 is shown. The structure 200 represents the structure 100 after the pre-treatment process. After removing the structure 100 from the reaction chamber, a pre-treatment process is performed on the structure 100. The pre-treatment process helps to create new fault line boundaries 224 in the residual coating 120. As Figure 2 shown, the boundaries 224 create a plurality of openings in the residual coating 120 to allow the cleaning chemical solution to interact with the protective layer, thereby removing the residual coating 120. The pre-treatment process may include any process selected from thermal shock, laser scribing, mechanical scribing, high-pressure spraying, or other similar pre-treatment options.

[0053] Now referring to Figure 3 , a cross-sectional view of the cleaning device 300 is shown. The cleaning device 300 includes a pressure vessel 302 containing a cleaning chemical solution 304. In an exemplary embodiment, the pressure vessel 302 is an isochoric pressure vessel. Further information regarding an exemplary pressure vessel is described in U.S. Patent Application Publication No. US2023 / 0234106, titled "Coating removal system and method of operating same", filed on January 25, 2023, the entire content of which is incorporated herein by reference.

[0054] In some embodiments, the cleaning device 300 further includes means for agitating the cleaning chemical solution 304. In such an embodiment, the cleaning device 300 may include a stirring mechanism 306. In one aspect, the stirring mechanism 306 may include a magnetic stirrer that uses a rotating magnetic field to rapidly rotate a stirring rod (not shown) immersed in the cleaning chemical solution 304, thereby agitating the cleaning chemical solution 304. In another aspect, the stirring mechanism 306 may include an overhead stirrer (not shown) that includes a motorized mechanism for driving a stirring rod or paddle immersed in the cleaning chemical solution 304. In another aspect, the stirring mechanism 306 may include a vortex mixer that creates a vortex in the cleaning chemical solution 304.

[0055] In some embodiments, the cleaning device 300 may include means for controlling the temperature in the pressure vessel 302. In such embodiments, the cleaning device 300 may include a temperature control system 308. In one aspect, the temperature control system 308 may include a programmable logic controller (PLC)-based system that uses the PLC to manage a heater and temperature sensors (not shown) to achieve temperature control of the cleaning chemical solution 304 (e.g., through closed-loop control).

[0056] In some embodiments, the cleaning device 300 may include means for controlling the pressure in the pressure vessel 302. In such embodiments, the cleaning device 300 may include a pressure control device 310. In one aspect, the pressure control device 310 may include a controller operably communicable with a pressure sensor and one or more of pneumatic, electric, and electro-pneumatic actuators to control the pressure in the pressure vessel 302.

[0057] According to examples of the present disclosure, the cleaning chemical solution 304 may include an aqueous alkaline cleaning chemical solution 304. In some example embodiments, the cleaning chemical solution 304 includes sodium hydroxide. In example embodiments, the cleaning chemical solution 304 includes potassium hydroxide. In example embodiments, the cleaning chemical solution is a 10% to 40% by weight alkaline cleaning chemical solution 304. In example embodiments, the cleaning chemical solution 304 may be an acidic cleaning chemical solution.

[0058] As Figure 3 shown, the pretreatment structure 200 is immersed in the pressure vessel 302 filled with the cleaning chemical solution 304. In example embodiments, the volume of the cleaning chemical solution 304 is half of the available volume within the pressure vessel 302. In example embodiments, the amount of the cleaning chemical solution 304 in the pressure vessel 302 is determined based on the volume of the structure 200 such that the structure 200 can be immersed in the pressure vessel 302 to be completely surrounded by the cleaning chemical solution 304. In example embodiments, the pressure vessel 302 is completely filled with the cleaning chemical solution 304.

[0059] The cleaning chemical solution 304 is designed to interact with the residual coating 120. Thus, after the structure 200 is immersed in the pressure vessel 302, the cleaning chemical solution 304 is configured to etch the residual coating 120 without corroding the metallic core 102. The cleaning chemical solution 304 is capable of penetrating through the top layer of the residual coating 120 (e.g., a parasitic layer such as hafnium oxide) and reaching the underlying layer (e.g., a protective layer such as aluminum oxide) via the boundary 224. As described herein, the underlying layer is chemically eroded (e.g., etched) by the cleaning chemical solution 304, and thus, the top layer located above that can be fused to the underlying layer is also removed with minimal damage to the metallic core 102.

[0060] The pressure vessel 302 is designed as a chemical cleaning tank that can be heated, pressurized, and / or agitated to be able to quickly remove the residual coating 120, for example, by using one or more of the stirring mechanism 306, the temperature control system 308, and the pressure control device 310. In an exemplary embodiment, the cleaning chemical solution 304 is heated to accelerate its reaction with the residual coating 120. In an exemplary embodiment, the cleaning chemical solution 304 is heated to the boiling point or near the boiling point. In an exemplary embodiment, the cleaning chemical solution 304 can be superheated by an increase in pressure. In an exemplary embodiment, the cleaning chemical solution 304 is heated to at least 120 degrees Celsius to cause the cleaning chemical solution 304 to react with the residual coating 120.

[0061] In an exemplary embodiment according to the present disclosure, pressure fluctuations can accelerate the reaction between the cleaning chemical solution 304 and the residual coating 120. After the pretreatment structure 200 is immersed in the cleaning chemical solution 304, an initial pressure is introduced into the pressure vessel 302, for example, by using the pressure control device 310. After the pressure inside the pressure vessel 302 reaches the desired pressure, the conditions in the pressure vessel 302 can be changed to return the pressure fluctuations to the initial value or a different desired pressure value. Thus, the pressure vessel 302 is configured to oscillate the pressure between a first pressure value and a second pressure value. In an exemplary embodiment, the first pressure value is a high pressure value and the second pressure value is a pressure value lower than the first pressure value. Therefore, such fluctuations between the two pressure values can accelerate the reaction between the cleaning chemical solution 304 and the residual coating 120.

[0062] In an exemplary embodiment, the first pressure value is equal to atmospheric pressure and the second pressure value is approximately equal to vacuum pressure. In an exemplary embodiment, the difference between the first pressure value and the second pressure value is 300 pounds per square inch (PSI). In an exemplary embodiment, the first pressure value is 300 PSI and the second pressure value is atmospheric pressure. In an exemplary embodiment, the difference between the first pressure value and the second pressure value is less than 300 PSI.

[0063] In an exemplary embodiment, after the pretreatment structure 200 is immersed in the cleaning chemical solution 304, the reaction process starts at room temperature. At room temperature, the initial pressure in the pressure vessel 302 may be high. As the cleaning chemical solution 304 is heated, the pressure in the pressure vessel 302 decreases. When the cleaning chemical solution 304 reaches its boiling point, the pressure can be reintroduced by lowering the temperature.

[0064] The cyclic pressurization of the cleaning chemical solution 304 accelerates the reaction between the cleaning chemical solution 304 and the residual coating 120. The pressure fluctuations within the pressure vessel 302 enhance the movement of the cleaning chemical solution 304 within the pressure vessel 302 and enable it to pass through the boundaries 224 created within the structure 200. The movement of the cleaning chemical solution 304 can be particularly beneficial in cases where the structure 200 is not fully immersed in the cleaning chemical solution 304. In such an exemplary embodiment, due to the cyclic pressurization, the movement of the cleaning chemical solution 304 prevents the cleaning chemical solution 304 from settling at the bottom of the pressure vessel 302. In some embodiments, the pressure control device 310 includes a pressure sensor coupled to the pressure vessel 302 to verify its internal pressure.

[0065] In an exemplary embodiment, the pressure vessel 302 can be coupled to an agitation tool 312. In an exemplary embodiment, the agitation tool 312 includes a jet semiconductor processing system. In an exemplary embodiment, the cyclic pressurization can be affected by introducing various gaseous components into the pressure vessel 302 and thus into the cleaning chemical solution 304. These gaseous components can include nitrogen, argon, or other similar gases. The dissolution of the gas within the cleaning chemical solution 304 causes a pressure change, which affects the reaction rate between the cleaning chemical solution 304 and the residual coating 120.

[0066] In an exemplary embodiment, after the pressure within the pressure vessel 302 reaches a first pressure value, the structure 200 is allowed to soak in the cleaning chemical solution 304 for a first determined period of time before the pressure is changed back to a second pressure value. Similarly, in an exemplary embodiment, after the pressure within the pressure vessel 302 reaches the second pressure value, the structure 200 is allowed to soak in the cleaning chemical solution 304 for a second determined period of time before the pressure is changed back to the first pressure value. In some examples, the first determined period of time and the second determined period of time are equal. In other examples, the first determined period of time and the second determined period of time are different.

[0067] In an exemplary embodiment, the cleaning device 300 includes an agitation tool 312, which can include an ultrasonic processing system. The ultrasonic processing system causes the cleaning chemical solution 304 to move by applying acoustic energy and enhances its reaction with the residual coating 120. In an exemplary embodiment, the agitation tool 312 includes additives that enhance the layer penetration and etching rate. In an exemplary embodiment, the agitation tool 312 includes nozzles, which can increase the reaction rate between the cleaning chemical solution 304 and the residual coating 120 by removing reaction products and further renewing the cleaning chemical solution 304. In an exemplary embodiment, these nozzles include ejector nozzles.

[0068] Now referring to Figure 4 , a cross-sectional view of the cleaning structure 400 is shown. The cleaning process performed by the cleaning device 300 produces as Figure 4The basic cleaning structure 400 shown. After the cyclic pressurization is completed, the cleaning structure 400 is removed from the pressure vessel 302. As Figure 4 shown, no residual coating is visible on the metallic core 102. However, in some example embodiments, after the cleaning structure 400 is removed from the pressure vessel 302, by-products may remain on the cleaning structure 400. Thus, in some example embodiments, the cleaning structure 400 is then post-processed to remove any residual coating 120 remaining on the metallic core 102, or to remove any reaction by-products that may be generated during Figure 3 the wet chemical removal process. In an example embodiment, the post-processing includes at least one of power washing, chemical soaking, scrubbing, acid soaking, or any other similar process to remove the reaction by-products remaining on the metallic core 102 after the wet chemical removal.

[0069] After removal from the pressure vessel 302 and optional post-processing, the cleaning structure 400 is inspected for any residual coating that may remain deposited on the metallic core 102. If a residual coating remains on the metallic core 102, the cleaning structure 400 is immersed again in the pressure vessel 302, and the wet chemical removal process is performed again. When the inspection indicates that the cleaning structure 400 has no residual coating (including parasitic and protective layers), the cleaning structure 400 can be returned to the semiconductor processing system.

[0070] Now referring to Figure 5 , the block diagram illustrates various systems, tools, and equipment used in the cleaning process of the present disclosure. As Figure 5 shown, a semiconductor processing system 504 is shown. The semiconductor processing system 504 includes the structure 100 before the cleaning process (see Figure 1 ). To remove the residual coating 120, the structure 100 is removed from the semiconductor processing system 504 and processed in the cleaning system 502.

[0071] The cleaning system 502 includes a preprocessing tool 506, a cleaning device 300 (as described above), and an inspection tool 508. The structure 100 is processed using the preprocessing tool 506. The preprocessing tool 506 can be configured to create new fault line boundaries in the residual coating of the structure 100 (as Figure 2 shown). In an example embodiment, the preprocessing tool 506 is configured to perform any one of thermal shock, laser scribing, mechanical scribing, high-pressure spraying, or other similar processes. Thus, the preprocessing tool 506 creates a preprocessed structure 200 (as Figure 2 shown).

[0072] The preprocessed structure 200 is then processed in the cleaning device 300 (see Figure 3 ). As Figure 3As discussed, the cleaning device 300 is configured to substantially remove the residual coating deposited on the structure 200. After the structure 200 is processed in the cleaning device 300, the cleaning structure 400 is inspected by using the inspection tool 508. When the inspection tool 508 determines that the residual coating 120 remains deposited on the cleaning structure 400, the cleaning structure 400 is reprocessed in the cleaning device 300. When the inspection tool 508 determines that the cleaning structure 400 is free of the residual coating 120, the cleaning structure 400 is returned to the semiconductor processing system 504.

[0073] Figure 6 A method 600 for removing atomic layer deposits (such as the residual coating 120) deposited on a metallic component according to an example of the present disclosure is shown. The method 600 includes pretreating the metallic component containing the residual coating to provide a larger surface area for chemical undercutting (step 602). In an exemplary embodiment of the method 600, pretreating the metallic component further includes a thermal shock, laser scribing, mechanical scribing, and / or high-pressure spraying process.

[0074] The method 600 further includes immersing the metallic component in a cleaning chemical solution (step 604). The cleaning chemical solution is an aqueous alkaline cleaning chemical solution. In an exemplary embodiment, the alkaline cleaning chemical solution may include sodium hydroxide. In an exemplary embodiment, the alkaline cleaning chemical solution may include potassium hydroxide. In an exemplary embodiment of the method 600, 10% to 40% of the cleaning chemical solution is alkaline.

[0075] The method 600 further includes agitating the cleaning chemical solution to accelerate the reaction between the cleaning chemical solution and the residual coating (step 606). The agitation of the cleaning chemical solution also includes a cyclic pressurization process. The cyclic pressurization process starts from an initial pressure value. The next step of the process includes changing the pressure in the pressure vessel containing the cleaning chemical solution until the initial pressure value equals the desired pressure value. In some exemplary embodiments, the metallic component is immersed in the cleaning chemical solution at the desired pressure value for a given time duration. The next step of the process includes changing the pressure in the pressure vessel until the required pressure value returns to the initial pressure value. In some exemplary embodiments, the metallic component is immersed in the cleaning chemical solution at the initial pressure value for a given time duration. Thus, the cyclic pressurization continues the process and oscillates the pressure value between the initial pressure value (such as a first pressure value) and the desired pressure value (such as a second pressure value) for a determined number of cycles, while optionally immersing the metallic component after reaching the pressure value. After completing the determined number of cycles, the metallic component is removed from the pressure vessel. In an exemplary embodiment, the difference between the initial pressure value and the desired pressure value is 300 PSI.

[0076] In an exemplary embodiment of method 600, changing the pressure of the cleaning chemical solution includes changing the temperature of the cleaning chemical solution. In an exemplary embodiment, the cleaning chemical solution is heated to a temperature of at least 120 degrees Celsius. In an exemplary embodiment, the cleaning chemical solution is heated to the boiling point of the cleaning chemical solution.

[0077] In an exemplary embodiment of method 600, circulating and pressurizing the cleaning chemical solution includes dissolving a gaseous component in the cleaning chemical solution to affect the pressure of the cleaning chemical solution. In an exemplary embodiment, the gaseous component is at least one of argon or nitrogen.

[0078] In an exemplary embodiment of method 600, agitating the cleaning chemical solution includes introducing at least one of ultrasonic treatment, spraying, circulation, or an additive into the cleaning chemical solution to enhance the movement of the cleaning chemical solution, thereby accelerating the reaction of the cleaning chemical solution with the residual coating. In a further exemplary embodiment, circulation further includes using an injector nozzle to increase the flow rate of the cleaning chemical solution.

[0079] Method 600 further includes removing the metallic component from the cleaning chemical solution after agitation (step 608). In some exemplary embodiments, method 600 further includes post-treating the metallic component to remove by-products (step 610). Post-treatment may include power washing, chemical dipping, and scrubbing. Any by-products remaining from the reaction between the cleaning chemical solution and the metallic component in step 606 can be removed by post-treatment.

[0080] Finally, method 600 includes inspecting the metallic component to determine whether any residual coating remains deposited on the metallic component (step 612). If it is determined that a residual coating remains deposited on the metallic component, then starting from step 604, method 600 is repeated by immersing the metallic component in the cleaning chemical solution and agitating the metallic component. Thus, method 600 is repeated from step 604 to step 612 until the inspection determines that no residual coating remains deposited on the metallic component. After determining that the metallic component has no residual coating, the metallic component can be reinstalled into the semiconductor processing system (e.g., the reaction chamber of the semiconductor processing system) from which it was removed.

[0081] The above-described exemplary embodiments do not limit the scope of the present invention because these embodiments are merely examples of embodiments of the present invention, and the scope of the present invention is defined by the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of the present invention. Various modifications of the present disclosure, such as alternative useful combinations of the described elements, will be apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A method for removing an atomic layer deposition (ALD) coating from a metallic component comprising titanium, the method comprising: Pre-treating metallic parts containing residual coatings to provide more surface area for chemical undercutting; Immerse the metallic parts in a cleaning chemical solution; as well as The cleaning chemical solution is agitated to accelerate the reaction between the cleaning chemical solution and the residual coating.

2. The method according to claim 1, wherein: Pre-treating the metallic component further comprises performing at least one of a thermal shock, laser scribing, mechanical scribing, and high pressure spraying process.

3. The method according to claim 1, wherein: Agitating the cleaning chemical solution further comprises: Starting cyclic pressurization at a first pressure value; changing the pressure of the cleaning chemical solution until the first pressure value is equal to the second pressure value; changing the pressure of the cleaning chemical solution until the second pressure value is equal to the first pressure value; oscillating between a first pressure value and a second pressure value a determined number of cycles; and After a determined number of cycles have been completed, the metallic component is removed from the cleaning chemical solution.

4. The method according to claim 3, further comprising: After the cleaning chemical solution reaches the second pressure value, immersing the metallic component in the cleaning chemical solution for a given period of time; as well as After the cleaning chemical solution reaches the first pressure value, the metallic component is immersed in the cleaning chemical solution for a given period of time.

5. The method according to claim 3, wherein: The difference between the first pressure value and the second pressure value is 300 pounds per square inch (PSI).

6. The method according to claim 3, wherein: Changing the pressure of the cleaning chemical solution includes changing the temperature of the cleaning chemical solution.

7. The method according to claim 3, wherein: The cyclic pressurization also includes dissolving gaseous components in the cleaning chemical solution to affect the pressure of the cleaning chemical solution.

8. The method according to claim 1, wherein: Agitating the cleaning chemical solution further includes at least one of ultrasonicating, spraying, and circulating the cleaning chemical solution.

9. The method according to claim 8, wherein: Flowing also includes utilizing an injector nozzle to increase the flow rate of the cleaning chemical solution.

10. The method of claim 1, further comprising post-treating the metallic component by performing at least one of power washing, chemical dipping, and scrubbing to remove byproducts remaining from a reaction between the cleaning chemical solution and the metallic component.

11. The method according to claim 1, further comprising: removing the metallic component from the cleaning chemistry solution after agitation; Inspecting metallic parts to determine if any residual coating remains deposited on the metallic parts; as well as When it is determined that the residual coating remains deposited on the metallic component, the metallic component is immersed in a cleaning chemical solution and the metallic component is agitated.

12. The method according to claim 1, wherein: Agitating the cleaning chemistry solution also includes heating the cleaning chemistry solution to a boiling point of the cleaning chemistry solution.

13. The method according to claim 1, wherein: The cleaning chemical solution is an alkaline cleaning chemical solution.

14. A cleaning system comprising: a pre-treatment component, wherein the pre-treatment component is configured to produce a fault line boundary on a metallic component, wherein the metallic component includes a residual coating remaining from a previous deposition process; a cleaning device coupled to the pretreatment component, wherein the cleaning device further comprises a pressure vessel and a cleaning chemical solution, wherein the cleaning chemical solution fills at least a portion of the pressure vessel, and wherein the cleaning chemical solution is configured to react with and remove a residual coating of the metallic component from the metallic component; as well as An inspection component is coupled to the cleaning apparatus, wherein the inspection component is configured to determine whether a residual coating remains deposited on the metallic component after the pretreatment and cleaning process.

15. The cleaning system of claim 14, wherein: The pre-treatment component is configured to perform at least one of a thermal shock, laser scribing, mechanical scribing, and high pressure spraying process.

16. The cleaning system of claim 14, wherein: The cleaning chemical solution includes an alkaline cleaning chemical solution.

17. The cleaning system of claim 14, wherein: The cleaning device further comprises a pressure control device, wherein the pressure control device is configured to cause the pressure within the pressure vessel to fluctuate between a starting pressure value and a desired pressure value in a determined number of cycles.

18. The cleaning system of claim 14, further comprising: A post-treatment component is provided, wherein the post-treatment component is configured to remove byproducts remaining on the metallic component after a reaction between the cleaning chemical solution and the residual coating.

19. The cleaning system of claim 18, wherein: The post-treatment component is configured to perform at least one of a power wash, a chemical dip, and a scrub process.

20. A cleaning device comprising: Pressure vessels; Cleaning chemical solutions enclosed in pressurized vessels; A metallic component having a residual coating, wherein the metallic component is immersed in a cleaning chemical solution; wherein the pressure vessel is configured to cause the pressure within the pressure vessel to oscillate between a first pressure value and a second pressure value; and Therein, the cleaning chemical solution is configured to etch the residual coating.

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