A graphite boat for liquid phase epitaxial growth of gallium-indium alloys

Abstract

The present invention provides a graphite boat for liquid phase epitaxial growth of gallium-indium alloys, comprising a mother liquor tank block, a tank plate, and a bottom support. The mother liquor tank block is placed on the tank plate, and the mother liquor tank block and the tank plate are placed together in the bottom support. The tank plate is provided with a substrate tank for placing a substrate and a volatile source tank for placing a volatile source. Both the substrate tank and the volatile source tank are located on the side of the tank plate facing the mother liquor tank block. The mother liquor tank block is provided with a mother liquor hole and an adsorption hole. A placement space for placing the mother liquor is formed in the mother liquor hole, and a compensating member is placed in the mother liquor hole. The compensating member contacts the placement space. The adsorption hole is spaced apart from the mother liquor hole, and an adsorption member is provided in the adsorption hole. In this way, the mother liquor composition is stabilized, steam condensation interference is avoided, the substrate is protected, and the quality and yield of the epitaxial material are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of graphite boats, and in particular to a graphite boat used for liquid phase epitaxial growth of gallium-indium alloys. Background Art

[0002] With the advancement of technology, high-temperature processes have placed stringent demands on the precise processing and stable handling of materials. Graphite boats, with their excellent high-temperature resistance, chemical stability, and good thermal conductivity, have become a core tool for carrying substrates and mother solutions, supporting complex process flows. In compound semiconductor thin film growth processes, in particular, the performance of graphite boats directly impacts material quality and device performance, making their design and optimization a key area of ​​industry research.

[0003] Typically, a graphite boat consists of a mother liquor tank block, a tank plate, and a base. The mother liquor tank block holds the mother liquor required for growth, the tank plate precisely secures the substrate, and the base provides support and positioning. During the growth process, the mother liquor tank block and tank plate are aligned and then fed into a high-temperature reaction chamber. The mother liquor comes into contact with the substrate, where the high temperature drives the solute to gradually precipitate and epitaxially grow on the substrate surface, forming the desired semiconductor thin film material.

[0004] However, existing graphite boats will produce problems such as mother liquor composition imbalance, steam condensation, and substrate element dispersion during high-temperature processes, resulting in deviations in the chemical composition of the epitaxial film, hindered growth, and low material quality and yield. Summary of the Invention

[0005] In order to at least partially solve the problems existing in the prior art, according to one aspect of the present invention, a graphite boat for liquid phase epitaxial growth of gallium-indium alloys is provided, comprising a mother liquid tank block, a tank plate and a bottom tray, the mother liquid tank block is placed on the tank plate, the mother liquid tank block and the tank plate are placed together in the bottom tray, the tank plate is provided with a substrate tank for placing a substrate and a volatile source tank for placing a volatile source, the substrate tank and the volatile source tank are both opened on a side of the tank plate facing the mother liquid tank block, wherein a mother liquid hole and an adsorption hole are provided on the mother liquid tank block, a placement space for placing the mother liquid is formed in the mother liquid hole, and a compensation piece is placed in the mother liquid hole, the compensation piece is in contact with the placement space, the adsorption hole is spaced apart from the mother liquid hole, and an adsorption piece is provided in the adsorption hole.

[0006] Exemplarily, the substrate is made of gallium antimonide, the compensation element is made of indium arsenide, the adsorption element is made of gallium antimonide, and the volatilization source is made of metallic gallium.

[0007] Exemplarily, the substrate is made of indium arsenide, the compensation element is made of gallium arsenide, the adsorption element is made of gallium arsenide, and the volatilization source is made of metallic indium.

[0008] Exemplarily, the compensating member is a sheet-like structure and contacts the top of the mother liquid.

[0009] Exemplarily, a pressure block is provided on the side of the compensating piece facing away from the mother liquid.

[0010] Illustratively, at least a portion of the structure of the pressed block is located in the mother liquid hole, and in the vertical direction, the ratio of the height of the pressed block to the height of the mother liquid hole is 30% to 35%.

[0011] Exemplarily, the pressing block is made of graphite or quartz.

[0012] Exemplarily, a limiting convex piece is provided on the hole wall of the adsorption hole, and the adsorption member abuts against the limiting convex piece.

[0013] Exemplarily, there are at least two adsorption holes. In the length direction of the mother liquid tank block, at least one adsorption hole is located on one side of the mother liquid hole and at least one adsorption hole is located on the other side of the mother liquid hole, and an adsorption piece is provided in each adsorption hole.

[0014] Exemplarily, the thickness of the compensation element and / or the adsorption element in the vertical direction is 500 μm to 550 μm.

[0015] The graphite boat for liquid phase epitaxial growth of gallium-indium alloys provided in the embodiments of the present application maintains a stable mother liquid concentration by contacting the mother liquid through a compensating element, replenishing solutes consumed during growth in real time. Adsorbents within the adsorption holes capture metal vapor volatilized from the adsorbent, preventing it from binding to the substrate and ensuring thin film growth. The volatile source within the volatile source tank releases vapor after heating, increasing the concentration of elements near the substrate and suppressing the escape of substrate elements. This stabilizes the mother liquid composition, prevents interference from vapor condensation, protects the substrate, and improves the quality and yield of the epitaxial material.

[0016] The Summary of the Invention introduces a series of simplified concepts that will be further described in detail in the Detailed Description of the Invention. This Summary of the Invention is not intended to limit the key features and essential features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0017] The advantages and features of the present invention are described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following drawings of the present invention are hereby incorporated into the present invention for understanding the present invention. The drawings show embodiments of the present invention and their descriptions, and are used to explain the principles of the present invention. In the drawings,

[0019] Figure 1 is a cross-sectional view of a mother liquid tank block according to an exemplary embodiment of the present invention;

[0020] Figure 2 A top view of a mother liquid tank block according to an exemplary embodiment of the present invention;

[0021] Figure 3 is a cross-sectional view of a slot plate according to an exemplary embodiment of the present invention;

[0022] Figure 4 A top view of a slotted plate according to an exemplary embodiment of the present invention;

[0023] Figure 5 is a side view of a base according to an exemplary embodiment of the present invention;

[0024] Figure 6 A bottom view of a base according to an exemplary embodiment of the present invention;

[0025] Figure 7 is a side view of a graphite boat according to an exemplary embodiment of the present invention;

[0026] Figure 8 A cross-sectional view of the structure of a graphite boat according to an exemplary embodiment of the present invention after being assembled and placed in a reaction chamber before growth begins;

[0027] Figure 9 A cross-sectional view of a graphite boat according to an exemplary embodiment of the present invention after being assembled and placed in a reaction chamber during the growth process;

[0028] Figure 10 This is a cross-sectional view of the structure of a graphite boat after being assembled and placed in a reaction chamber according to an exemplary embodiment of the present invention and after growth is completed.

[0029] The above drawings include the following reference numerals:

[0030] 10. Graphite boat; 110. Mother liquor tank block; 1110. Mother liquor hole; 1111. Compensating part; 1112. Pressing block; 1120. Adsorption hole; 1121. Adsorption part; 1122. Positioning protrusion; 120. Slot plate; 1210. Substrate slot; 1220. Volatile source slot; 130. Bottom support; 1310. Through slot; 1320. Connecting hole; 210. Mother liquor; 220. Volatile source; 230. Substrate. DETAILED DESCRIPTION

[0031] In the following description, a large amount of detail is provided to facilitate a thorough understanding of the present invention. However, it will be appreciated by those skilled in the art that the following description merely illustrates preferred embodiments of the present invention, and that the present invention may be practiced without one or more of these details. Furthermore, to avoid confusion with the present invention, some technical features well known in the art have not been described in detail.

[0032] The present invention provides a graphite boat for liquid phase epitaxial growth of gallium-indium alloy (hereinafter referred to as graphite boat). Figure 1 、 Figure 3 , Figure 4 、 Figure 5 、 Figure 7 and Figure 8 The graphite boat 10 may include a mother liquid tank block 110, a tank plate 120, and a base 130. The mother liquid tank block 110 is placed on the tank plate 120, and the mother liquid tank block 110 and the tank plate 120 are placed together in the base 130. The base 130 has a U-shaped through-groove 1310, into which both the mother liquid tank block 110 and the tank plate 120 are placed. The tank plate 120 is generally plate-shaped. The tank plate 120 is provided with a substrate groove 1210 for placing a substrate 230 and a volatile source groove 1220 for placing a volatile source 220. Both the substrate groove 1210 and the volatile source groove 1220 are located on the side of the tank plate 120 facing the mother liquid tank block 110. The substrate groove 1210 may be located at the center of the tank plate 120. The cross-section of the substrate groove 1210 may be square. The horizontal dimensions of the substrate groove 1210 are 14 mm x 14 mm. The volatile source 220 can be a metal volatile source. The volatile source 220 can increase the vapor concentration near the substrate 230 through heating and evaporation, suppressing the escape of elements from the substrate 230 and providing a suitable vapor environment for epitaxial growth. There can be multiple volatile source grooves 1220, distributed on opposite sides of the substrate groove 1210. For example, there can be four volatile source grooves 1220, one located at each of the four endpoints of the substrate groove 1210. The cross-section of the volatile source grooves 1220 can be rectangular, with horizontal dimensions of 25 mm x 7 mm.

[0033] The mother liquor tank block 110 is provided with a mother liquor hole 1110 and an adsorption hole 1120. A storage space for the mother liquor 210 is formed within the mother liquor hole 1110. A compensating element 1111 is placed within the mother liquor hole 1110, contacting the storage space. When the mother liquor 210 is placed within the mother liquor hole 1110, the compensating element 1111 contacts the mother liquor 210. The compensating element 1111 replenishes key elements (such as gallium and indium) in the mother liquor 210 by dissolving its own material, maintaining a constant concentration of the mother liquor 210 and ensuring the precise chemical composition of the epitaxial thin film. The adsorption hole 1120 is spaced apart from the mother liquor hole 1110 and is provided with an adsorption element 1121. The adsorption element absorbs vapor emitted from the mother liquor 210 during the growth process, maintaining a stable vapor concentration within the reaction chamber and ensuring a stable epitaxial growth environment. The mother liquid hole 1110 and the adsorption hole 1120 may both be provided vertically through the mother liquid tank block 110 .

[0034] Existing technologies have two major problems during the growth process, which seriously affect the quality and yield of epitaxial films: First, as solutes in the mother liquor continue to precipitate during material growth, the mother liquor composition changes, causing the epitaxial film composition to deviate from the ideal value; second, because the entire growth process is in a high-temperature environment, the mother liquor continuously evaporates gallium or indium vapor. These vapors easily combine with the substrate, forming a gallium-indium alloy on the substrate surface, hindering film growth. The high temperature will also cause elements in the substrate to escape, thereby generating defects and affecting the quality of the epitaxial material.

[0035] During operation, the graphite boat 10 provided in the embodiment of the present application carries the mother liquor tank block 110 and the tank plate 120, which are loaded into the reaction chamber together. The temperature is raised to a predetermined level, causing the mother liquor 210 to melt. The compensating element 1111 can replenish the solute in the mother liquor 210 in real time due to precipitation. The adsorbent 1121 within the adsorption hole 1120 absorbs vapor emitted from the mother liquor 210 to prevent contamination of the substrate 230. The substrate tank 1210 on the tank plate 120 secures the single crystal substrate 230. The volatilization source 220 in the volatilization source tank 1220 evaporates upon heating, increasing the vapor concentration near the substrate 230 and suppressing the escape of elements from the substrate 230.

[0036] The graphite boat 10 for liquid phase epitaxial growth of gallium-indium alloys provided in the present embodiment is in contact with the mother liquid 210 via the compensation element 1111, replenishing solutes consumed during growth in real time to maintain a stable concentration in the mother liquid 210. The adsorbents 1121 within the adsorption holes 1120 capture metal vapor volatilized from the adsorbent, preventing the vapor from binding to the substrate 230 and ensuring thin film growth. The volatilization source 220 within the volatilization source groove 1220 releases vapor after heating, increasing the concentration of elements near the substrate 230 and suppressing the escape of elements from the substrate 230. This stabilizes the composition of the mother liquid 210, prevents interference from vapor condensation, protects the substrate 230, and improves the quality and yield of the epitaxial material.

[0037] Exemplarily, the substrate 230 can be made of gallium antimonide, the compensating element 1111 can be made of indium arsenide, the adsorbing element 1121 can be made of gallium antimonide, and the volatilization source 220 can be made of metallic gallium. Exemplarily, the compensating element 1111 can be an unintentionally doped indium arsenide wafer. The adsorbing element 1121 can be an unintentionally doped double-sided polished gallium antimonide wafer. The volatilization source 220 can be a metallic gallium sphere with a diameter of 5 mm and a purity exceeding 99.99999%. Each volatilization source slot 1220 contains at least six metallic gallium spheres. The indium arsenide compensating element 1111 dissolves and replenishes indium consumed in the mother liquor 210, maintaining a stable concentration. The gallium antimonide adsorbing element 1121 adsorbs indium vapor volatilized from the mother liquor 210, preventing contamination of the substrate 230. The metallic gallium volatilization source 220 increases the gallium vapor concentration near the substrate 230, suppressing the escape of gallium from the substrate 230. The three work together to ensure the precise composition of the epitaxial film and a suitable growth environment, reduce the defect rate, and improve the growth quality and yield of gallium-indium alloy epitaxial films.

[0038] For example, substrate 230 is made of indium arsenide, compensating element 1111 is made of gallium arsenide, adsorbing element 1121 is made of indium arsenide, and volatilization source 220 is made of metallic indium. Compensating element 1111 can be an unintentionally doped gallium arsenide wafer. Adsorbing element 1121 can be an unintentionally doped double-sided polished indium arsenide wafer. Volatilization source 220 can be a metallic indium sphere with a diameter of 5 mm and a purity exceeding 99.99999%. Each volatilization source slot 1220 contains at least six metallic indium spheres. After dissolution, indium compensating element 1111 replenishes indium in mother liquor 210 to maintain a stable concentration. Adsorbing element 1121 adsorbs gallium vapor volatilized from mother liquor 210 to prevent contamination of substrate 230. The metallic indium volatilization source 220 increases the concentration of indium vapor near substrate 230, suppressing the escape of indium from substrate 230. The various components work together to effectively ensure the accuracy of the film composition, reduce defects, and improve the quality and efficiency of the epitaxial growth of the gallium-indium alloy on the indium arsenide substrate 230.

[0039] For example, with reference to Figure 1 、 Figure 8 、 Figure 9 and Figure 10 The compensating member 1111 may be a sheet-like structure and contact the top of the mother liquid 210. This ensures that the compensating member 1111 better fits the surface of the mother liquid 210, avoids the compensation effect affected by position offset, and thus ensures the stability and yield of the finished material.

[0040] For example, with reference to Figure 1 、 Figure 8 、 Figure 9 and Figure 10A pressing block 1112 may be provided on the side of the compensating member 1111 facing away from the mother liquid 210. The pressing block 1112 can always be in close contact with the compensating member 1111 due to gravity, maintaining the posture of the compensating member 1111 during the growth process, preventing the compensating member 1111 from flipping over, and ensuring that the compensating member 1111 is accurately positioned and in constant contact with the mother liquid 210, thereby better ensuring the compensation effect of the compensating member 1111.

[0041] For example, with reference to Figure 1 、 Figure 8 、 Figure 9 and Figure 10 , at least part of the structure of the pressing block 1112 can be located in the mother liquid hole 1110, and in the vertical direction, the ratio of the height of the pressing block 1112 to the height of the mother liquid hole 1110 is 30% to 35%. The size of the pressing block 1112 can be 13mm×13mm×7mm. The pressing block 1112 can be located in the mother liquid hole 1110 as a whole. Exemplarily, the height of the pressing block 1112 in the vertical direction can be one-third of the height of the mother liquid hole 1110. In this way, the thickness and weight of the pressing block 1112 can be more moderate, avoiding crushing the compensating part 1111 and ensuring the contact between the compensating part 1111 and the mother liquid 210.

[0042] For example, with reference to Figure 1 、 Figure 8 、 Figure 9 and Figure 10 The horizontal dimension of the pressing block 1112 can be slightly smaller than the horizontal dimension of the mother liquid hole 1110. The horizontal dimension of the compensating member 1111 can be slightly smaller than the horizontal dimension of the pressing block 1112. The horizontal dimension of the adsorption member 1121 can be slightly smaller than the horizontal dimension of the adsorption hole 1120. It should be noted that the above-mentioned horizontal dimension includes the horizontal length and width of the component. When the component is square, the horizontal dimension can be understood as the side length.

[0043] For example, referring to Figure 1 and Figure 2 The compact 1112 is made of graphite or quartz. This makes it more suitable for high-temperature epitaxial growth environments. Graphite is heat-resistant and chemically stable, non-reactive with the mother liquor 210 and the compensating element 1111. Gravity can also stabilize the compensating element 1111, ensuring full contact with the mother liquor 210. Quartz, with its high purity and low thermal expansion coefficient, prevents the introduction of impurities while maintaining structural stability at high temperatures.

[0044] For example, referring to Figure 1The adsorption hole 1120 may be provided with a limiting tab 1122 on its wall, and the adsorption element 1121 abuts against the limiting tab 1122. The limiting tab 1122 secures the position of the adsorption element 1121, preventing it from shifting or falling, and ensuring that the adsorption hole 1120 maintains a stable adsorption effect on the volatile vapor of the mother liquid 210. For example, two limiting tabs 1122 may be provided in each adsorption hole 1120. The limiting tabs 1122 may be integrally formed graphite sheets during the processing of the adsorption hole 1120, and may have dimensions of 1.5 mm x 13 mm.

[0045] For example, referring to Figure 1 The adsorbent 1121 may be a sheet-like structure. The thickness of the adsorbent 1121 in the vertical direction may be 500 μm to 550 μm. For example, the thickness of the adsorbent 1121 may be 500 μm, 525 μm, or 550 μm, etc. The carrier concentration of the adsorbent 1121 is not higher than 1×10 17 cm -3 The size of the adsorption member 1121 may be 13 mm×13 mm×0.5 mm.

[0046] For example, referring to Figure 1 The thickness of the compensation member 1111 in the vertical direction may be 500 μm to 550 μm. For example, the thickness of the compensation member 1111 may be 500 μm, 525 μm, or 550 μm. The carrier concentration of the compensation member 1111 is not higher than 5×10 15 cm -3 For example, the size of the compensating member 1111 may be 13 mm×13 mm×0.5 mm.

[0047] For example, with reference to Figure 1 、 Figure 2 and Figure 8 There can be at least two adsorption holes 1120. Along the length of the mother liquid tank block 110, at least one adsorption hole 1120 is located on one side of the mother liquid hole 1110 and at least one adsorption hole 1120 is located on the other side of the mother liquid hole 1110. Each adsorption hole 1120 is provided with an adsorption element 1121. This allows for full coverage of the mother liquid 210 volatilization area. The adsorption elements 1121 adsorb metal vapor from different directions, reducing the diffusion path of the vapor toward the substrate 230, improving adsorption efficiency, and preventing contamination of the substrate 230.

[0048] For example, with reference to Figure 5 and Figure 6The base 130 may be provided with connection holes 1320 for connecting the base 130 to the quartz rake in the liquid phase epitaxy reaction chamber, thereby providing positioning and connection. For example, there may be six connection holes 1320, symmetrically located on both sides of the base 130. For example, the tank plate 120 may be provided with alignment lines for determining the relative position of the mother liquid tank block 110 and the tank plate 120 during assembly.

[0049] In one embodiment, the process can be as follows: During use, first, an unintentionally doped single-crystal gallium antimonide substrate 230 is placed in the substrate slot 1210 on the slot plate 120, and a volatile source 220 made of elemental gallium is placed in the volatile source slot 1220 on the slot plate 120. The entire slot plate 120 is then placed in the U-shaped through-slot 1310 of the base 130. The mother liquid tank block 110 is then placed above the slot plate 120, with the front end of the mother liquid tank block 110 aligned with the alignment line on the slot plate 120. The mother liquid 210, compensation member 1111, and pressing block 1112 are then sequentially placed into the mother liquid hole 1110. The adsorption member 1121 is then placed on the retaining tab 1122 in the adsorption hole 1120. The assembled graphite boat 10 is then placed in the reaction chamber of a liquid phase epitaxial growth furnace and connected to the tie rod in the reaction chamber via the connection hole 1320 on the slot plate 120. The overall cross-sectional view of the assembled graphite boat 10 is as follows: Figure 8 During the film growth process, the reaction chamber temperature is first raised to 650°C, then kept constant for 1.5 hours, then slowly lowered to 550°C, and kept constant for 20 minutes, and then the pull rod is pulled to make the substrate 230 overlap with the mother liquid 210, and the growth process begins, as shown in FIG. Figure 9 After the 5-minute timing is completed, the pull rod is pulled to separate the substrate 230 from the mother liquid 210, and then the temperature in the reaction chamber is quickly lowered to room temperature to cool the epitaxial film and complete the growth, as shown. Figure 10 shown.

[0050] In another embodiment, the process may be as follows: when in use, first place the unintentionally doped single crystal indium arsenide substrate 230 in the substrate slot 1210 on the slot plate 120, place the elemental metal indium volatile source 220 in the volatile source slot 1220 on the slot plate 120, then place the slot plate 120 as a whole in the U-shaped through slot 1310 of the bottom support 130, then place the mother liquid tank block 110 on top of the slot plate 120, with the front end of the mother liquid tank block 110 coinciding with the alignment line on the slot plate 120. Then place the mother liquid 210, the compensation piece 1111, and the pressing block 1112 in sequence into the mother liquid hole 1110. Then place the adsorption piece 1121 on the limiting piece in the adsorption hole 1120, then place the assembled graphite boat 10 as a whole in the reaction chamber of the liquid phase epitaxial furnace, and connect it to the pull rod in the reaction chamber through the connecting hole 1320 on the slot plate 120. The overall cross-sectional view of the assembled graphite boat 10 is shown as follows: Figure 8 During the film growth process, the reaction chamber temperature is first raised to 650°C, then kept constant for 1.5 hours, then slowly lowered to 550°C, and kept constant for 20 minutes, and then the pull rod is pulled to make the substrate 230 overlap with the mother liquid 210, and the growth process begins, as shown in FIG. Figure 9 After the 5-minute timing is completed, the pull rod is pulled to separate the substrate 230 from the mother liquid 210, and then the temperature in the reaction chamber is quickly lowered to room temperature to cool the epitaxial film and complete the growth, as shown. Figure 10 shown.

[0051] In the description of the present invention, it should be understood that the directions or positional relationships indicated by directional words such as "front", "back", "up", "down", "left", "right", "horizontal", "vertical", "vertical", "horizontal", "top", "bottom", etc. are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself.

[0052] For ease of description, area-relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the regional positional relationship between one or more components or features shown in the figures and other components or features. It should be understood that area-relative terms include not only the orientation of the components as described in the figures, but also different orientations during use or operation. For example, if the components in the drawings are inverted as a whole, the situation where the components are "above other components or features" or "above other components or features" will include the situation where the components are "below other components or structures" or "below other components or structures". Therefore, the exemplary term "above" can include both the orientations of "above" and "below". In addition, these components or features can also be positioned at other different angles (for example, rotated 90 degrees or other angles), and this document is intended to include all of these situations.

[0053] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, parts, components and / or combinations thereof.

[0054] It should be noted that the terms "first," "second," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0055] The present invention has been described through the above-described embodiments. However, it should be understood that the above-described embodiments are for illustrative and illustrative purposes only and are not intended to limit the present invention to the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments and that various variations and modifications may be made based on the teachings of the present invention, all of which fall within the scope of the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A graphite boat for liquid phase epitaxial growth of gallium-indium alloys, characterized in that: The invention comprises a mother liquid tank block, a tank plate and a bottom support, wherein the mother liquid tank block is placed on the tank plate, and the mother liquid tank block and the tank plate are placed together in the bottom support, the tank plate is provided with a substrate tank for placing a substrate and a volatile source tank for placing a volatile source, the substrate tank and the volatile source tank are both opened on the side of the tank plate facing the mother liquid tank block, wherein the mother liquid tank block is provided with a mother liquid hole and an adsorption hole, a placement space for placing mother liquid is formed in the mother liquid hole, and a compensation piece is placed in the mother liquid hole, the compensation piece is in contact with the placement space, the adsorption hole is spaced apart from the mother liquid hole, an adsorption piece is provided in the adsorption hole, the compensation piece is in sheet shape and in contact with the top of the mother liquid, The substrate is made of gallium antimonide, the compensating element is made of indium arsenide, the adsorbing element is made of gallium antimonide, and the volatilization source is made of metallic gallium, or The substrate is made of indium arsenide, the compensation component is made of gallium arsenide, the adsorption component is made of gallium arsenide, and the volatilization source is made of metallic indium.

2. The graphite boat for liquid phase epitaxial growth of gallium-indium alloy according to claim 1, characterized in that: A pressing block is provided on the side of the compensating member facing away from the mother liquid.

3. The graphite boat for liquid phase epitaxial growth of gallium-indium alloy according to claim 2, characterized in that: At least a portion of the structure of the pressing block is located in the mother liquid hole. In the vertical direction, the ratio of the height of the pressing block to the height of the mother liquid hole is 30% to 35%.

4. The graphite boat for liquid phase epitaxial growth of gallium-indium alloy according to claim 2, characterized in that: The pressing block is made of graphite or quartz.

5. The graphite boat for liquid phase epitaxial growth of gallium-indium alloy according to any one of claims 1 to 4, characterized in that: A limiting convex piece is provided on the hole wall of the adsorption hole, and the adsorption component abuts against the limiting convex piece.

6. The graphite boat for liquid phase epitaxial growth of gallium-indium alloy according to claim 1, characterized in that: There are at least two adsorption holes. In the length direction of the mother liquid tank block, at least one adsorption hole is located on one side of the mother liquid hole and at least one adsorption hole is located on the other side of the mother liquid hole. The adsorption part is arranged in each of the adsorption holes.

7. The graphite boat for liquid phase epitaxial growth of gallium-indium alloy according to claim 1, characterized in that: The thickness of the compensation element and / or the adsorption element in the vertical direction is 500 μm to 550 μm.

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