Electronic device and preparation method thereof

Abstract

The invention discloses an electronic device and a preparation method thereof, the electronic device comprises a substrate, a component and a wire structure, the component is located at one side of the substrate, and the component comprises a first conductive layer; the wire structure comprises a first wire branch and a second wire branch which are connected with each other. The first wire branch and the second wire branch are located on the side, away from the substrate, of the first conductive layer. The second lead subsection is in contact with the first conductive layer; in the direction parallel to the plane where the substrate is located, the first wire branch is located on the side, close to the geometric center of the first conductive layer, of the second wire branch, and a notch is formed between the opposite surfaces of the first wire branch and the first conductive layer. According to the technical scheme of the embodiment of the invention, by improving the connection design of the components and the wire structure, the problem of open circuit of the components in the electronic device is solved, and the product yield is improved.

Description

Technical Field

[0001] The present invention relates to the field of microelectronic technology, and particularly to an electronic device and a method for manufacturing the same. Background Art

[0002] Most electronic devices, such as resistors, capacitors, etc., generally include components, wires, and pads. The wires are electrically connected between the components and the pads, and the electrical connection between the components and the external circuit is achieved through conduction and the pads.

[0003] When manufacturing an electronic device, usually components are first formed on a substrate (substrate), then a wire metal layer is prepared through metal evaporation or other processes, and then the wire metal layer is patterned (such as etching) to form wires, so that the wires are electrically connected to the conductive layer (such as the film layer where the electrode is located) of the components.

[0004] Figure 1 is a schematic structural diagram of a traditional electronic device, as Figure 1 shown. Taking a thin film resistor as an example, in the design of a traditional electronic device, along the direction perpendicular to the plane of the substrate 01, the wire 03 has a part that overlaps with the projection of the conductive layer 021 of the component (such as Figure 1 the part enclosed by the dashed line box), and this part of the wire is in complete contact with the conductive layer 021 of the component. It is found that when manufacturing an electronic device according to this structural design, it is easy to cause incorrect etching or even over-etching of the conductive layer of the component due to process errors, thereby resulting in an open circuit of the component (such as Figure 2 the open circuit schematic diagram of the component shown), reducing the product yield. Summary of the Invention

[0005] The present invention provides an electronic device and a method for manufacturing the same, which solve the problem of open circuit of components inside the electronic device and improve the product yield by improving the connection design between the component and the wire structure.

[0006] In a first aspect, the present invention provides an electronic device, including:

[0007] A substrate;

[0008] A component located on one side of the substrate; the component includes a first conductive layer;

[0009] A wire structure; the wire structure includes a first wire section and a second wire section connected to each other. Both the first wire section and the second wire section are located on the side of the first conductive layer away from the substrate; the second wire section is in contact with the first conductive layer; along the direction parallel to the plane of the substrate, the first wire section is located on the side of the second wire section closer to the geometric center of the first conductive layer, and a gap is formed between the opposite surfaces of the first wire section and the first conductive layer.

[0010] Optionally, along the direction in which the second wire segment points to the first wire segment, the height of the notch increases in the direction perpendicular to the plane of the substrate.

[0011] Optionally, the cross-sectional shape of the first wire segment in the first cross-section is arc-shaped or stepped;

[0012] Wherein, the first cross-section is perpendicular to the plane of the substrate and parallel to the extension direction of the second wire segment.

[0013] Optionally, along the direction perpendicular to the plane of the substrate, the wire structure includes a first wire layer and a second wire layer arranged in a stacked manner;

[0014] The second wire layer is located on the side of the first wire layer away from the substrate, and the thickness of the second wire layer is greater than the thickness of the first wire layer.

[0015] Optionally, the first wire layer has adhesiveness.

[0016] Optionally, the component includes a thin film resistor;

[0017] The wire structure includes a first wire structure and a second wire structure; the first wire structure is in contact with the input end of the first conductive layer, and the second wire structure is in contact with the output end of the first conductive layer; along the direction parallel to the plane of the substrate, the input end and the output end are located on opposite sides of the geometric center of the first conductive layer.

[0018] In a second aspect, based on the same inventive concept, the present invention provides a method for manufacturing an electronic device, which is used to manufacture the electronic device provided in any embodiment of the present invention; the manufacturing method includes:

[0019] Providing a substrate;

[0020] Forming a component on one side of the substrate; the component includes a first conductive layer;

[0021] Forming a wire structure on one side of the substrate; the wire structure includes a first wire segment and a second wire segment connected to each other, and both the first wire segment and the second wire segment are located on the side of the first conductive layer away from the substrate; the second wire segment is in contact with the first conductive layer; along the direction parallel to the plane of the substrate, the first wire segment is located on the side of the second wire segment close to the geometric center of the first conductive layer, and a notch is formed between the opposite surfaces of the first wire segment and the first conductive layer.

[0022] Optionally, along the direction perpendicular to the plane of the substrate, the wire structure includes a first wire layer and a second wire layer arranged in a stacked manner;

[0023] Forming a wire structure on one side of the substrate includes:

[0024] A first sacrificial layer is formed on a side of the first conductive layer away from the substrate; a positive projection of the first sacrificial layer on the substrate is located within a positive projection of the first conductive layer on the substrate;

[0025] A first metal layer is formed on a side of the first sacrificial layer away from the substrate; the first metal layer covers the first sacrificial layer, the first conductive layer, and a part of the substrate;

[0026] A second sacrificial layer is formed on a side of the first metal layer away from the substrate; a positive projection of the second sacrificial layer on the substrate is located within a positive projection of the first sacrificial layer on the substrate;

[0027] A second metal layer is formed on a side of the first metal layer away from the substrate; the second metal layer is located outside the area where the second sacrificial layer is located and covers the first metal layer; in a direction perpendicular to the plane where the substrate is located, the thickness of the second metal layer is greater than the thickness of the first metal layer;

[0028] The second sacrificial layer is removed to expose a part of the first metal layer;

[0029] The exposed part of the first metal layer is removed, and the part of the first metal layer in contact with the second metal layer is retained;

[0030] The first sacrificial layer is removed to form a wire structure.

[0031] Optionally, the materials of the first sacrificial layer and the second sacrificial layer include photoresist.

[0032] Optionally, the first metal layer is formed by a metal evaporation or metal sputtering process; the second metal layer is formed by an electroplating process.

[0033] In the technical solution of the embodiment of the present invention, the wire structure is provided to include a first wire branch and a second wire branch that are connected to each other. Both the first wire branch and the second wire branch are located on a side of the first conductive layer of the component away from the substrate. In a direction parallel to the plane where the substrate is located, the first wire branch is located on a side of the second wire branch closer to the geometric center of the first conductive layer. Among them, the second wire branch is in contact with the first conductive layer, and a gap is formed between the opposite surface of the first wire branch and the first conductive layer, so that the wire structure resembles a "cornice" structure. In this way, when manufacturing an electronic device according to this design, the problem that the conductive layer (such as the first conductive layer) of the component is etched due to process errors in the existing design scheme, resulting in device open circuit, can be solved. By improving the connection design between the component and the wire structure, the product yield is improved.

[0034] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0036] Figure 1 is a schematic structural diagram of a traditional electronic device;

[0037] Figure 2 is corresponding to Figure 1 a schematic diagram of the open circuit of the corresponding component;

[0038] Figure 3 is a schematic structural diagram of an electronic device provided by an embodiment of the present invention;

[0039] Figure 4 is a schematic structural diagram of another electronic device provided by an embodiment of the present invention;

[0040] Figure 5 is a schematic structural diagram of another electronic device provided by an embodiment of the present invention;

[0041] Figure 6 is a schematic flowchart of a method for manufacturing an electronic device provided by an embodiment of the present invention;

[0042] Figure 7 is corresponding to Figure 3 a manufacturing flowchart corresponding to the electronic device shown;

[0043] Figure 8 is corresponding to Figure 1 a manufacturing flowchart corresponding to the electronic device shown;

[0044] Figure 9 is a schematic flowchart of a method for manufacturing another electronic device provided by an embodiment of the present invention;

[0045] Figure 10 is corresponding to Figure 9 the main manufacturing flowchart of the corresponding electronic device. Detailed implementation manners

[0046] In order to enable those skilled in the art to better understand the solution of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0047] Without departing from the spirit or scope of the present application, various modifications and variations can be made to the present application, which will be apparent to those skilled in the art. Therefore, the present application is intended to cover modifications and variations of the present application that fall within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in the present application can be combined with each other without conflict.

[0048] First of all, it should be noted that unless otherwise defined, the technical terms or scientific terms used in the present invention should have the ordinary meaning understood by those of ordinary skill in the field to which the present invention pertains. The "first", "second" and similar terms used in the present invention do not denote any order, quantity or importance, but are only used to distinguish different components. "Including" and its similar terms mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. "Connection" or "coupling" and similar terms are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Similar terms such as "upper", "lower", "left" and "right" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly. In addition, the shapes and sizes of the components in the drawings do not reflect the true proportions, and the purpose is only to schematically illustrate the content of the present invention.

[0049] Figure 3 is a schematic structural diagram of an electronic device provided by an embodiment of the present invention, as Figure 3 shown, the electronic device provided by the embodiment of the present invention includes a substrate 1, a component 2 and a wire structure 3; the component 2 is located on one side of the substrate 1; the component 2 includes a first conductive layer 21; the wire structure 3 includes a first wire section 301 and a second wire section 302 that are connected to each other, and both the first wire section 301 and the second wire section 302 are located on the side of the first conductive layer 21 away from the substrate 1; the second wire section 302 is in contact with the first conductive layer 21; along the direction parallel to the plane where the substrate 1 is located, the first wire section 301 is located on the side of the second wire section 302 close to the geometric center of the first conductive layer 21, and a gap Q is formed between the opposite surfaces of the first wire section 301 and the first conductive layer 21.

[0050] Among them, the substrate 1 is an insulating substrate, and its material can be one or a combination of alumina ceramics, sapphire, silicon, or any other insulating material that can be used as a substrate. The embodiments of the present invention do not limit this.

[0051] Among them, the component 2 can be determined according to the actual electronic device. The first conductive layer 21 can be understood as one of all the conductive layers of the component 2, and is used for electrically connecting with the wire structure 3, so as to realize electrical connection with the external circuit.

[0052] Exemplarily, Figure 3 Taking the electronic device as a resistor device as an example for illustration. At this time, it is optional that the component 2 is a thin-film resistor. The thin-film resistor has the advantages of small volume, high precision, good stability, etc., and can be widely used in occasions requiring high precision, such as various instruments, medical equipment, electronic digital products, etc., and has good application prospects. As Figure 3 shown, when the component 2 is a thin-film resistor, the component 2 only includes the first conductive layer 21. At this time, the first conductive layer 21 is prepared from a material with a certain resistivity to form a thin-film resistor. Exemplarily, when the component 2 is a thin-film resistor, the material of the first conductive layer 21 includes but is not limited to tantalum nitride and nickel chromium.

[0053] Exemplarily, Figure 4 is a schematic structural diagram of another electronic device provided by an embodiment of the present invention. Figure 4 Taking the electronic device as a capacitor device as an example for illustration. As Figure 4 shown, when the electronic device is a capacitor device, the component 2 may include a first conductive layer 21, a second conductive layer 22, and a dielectric layer 23 located between the first conductive layer 21 and the second conductive layer 22. At this time, the first conductive layer 21 may be, for example, the upper capacitor plate. Correspondingly, the wire structure 3 refers to the wire electrically connected to the upper capacitor plate.

[0054] Furthermore, as Figure 3 shown, in this embodiment, the wire structure 3 includes a first wire section 301 and a second wire section 302 connected to each other. Both the first wire section 301 and the second wire section 302 are located on the side of the first conductive layer 21 away from the substrate 1; the second wire section 302 is in contact with the first conductive layer 21; along the direction parallel to the plane where the substrate 1 is located, the first wire section 301 is located on the side of the second wire section 302 closer to the geometric center of the first conductive layer 21, and a notch Q is formed between the opposite surfaces of the first wire section 301 and the first conductive layer 21.

[0055] As Figure 3As shown, the first wire section 301 and the second wire section 302 refer to the parts in the wire structure 3 that overlap with the projection of the first conductive layer 21 in the direction perpendicular to the plane where the substrate 1 is located; in addition, the wire structure 3 further includes a third wire section 303, the second wire section 302 is connected between the first wire section 301 and the third wire section 303, and in the direction perpendicular to the plane where the substrate 1 is located, the third wire section 303 does not overlap with the first conductive layer 21. In short, in this embodiment, along the extension direction of the wire structure 3 (or the current flow direction in the wire structure 3), the wire structure 3 is divided into three parts, namely the first wire section 301, the second wire section 302, and the third wire section 303( Figure 3 The bold dashed lines in) are the dividing lines among the three. In the direction perpendicular to the plane where the substrate 1 is located, both the first wire section 301 and the second wire section 302 overlap with the projection of the first conductive layer 21, and the third wire section 303 does not overlap with the projection of the first conductive layer 21.

[0056] Different from the traditional design scheme, in this embodiment, for the parts in the wire structure 3 that overlap with the projection of the first conductive layer 21 (i.e., the first wire section 301 and the second wire section 302), only the second wire section 302 is in contact with the first conductive layer 21. For the first wire section 301 that is closer to the geometric center of the first conductive layer 21, the first wire section 301 is not in contact with the first conductive layer 21, but a gap Q is formed between the relative surfaces of the two (such as the lower surface of the first wire section 301 and the upper surface of the first conductive layer 21), so that the wire structure 3 resembles a "cornice" structure (one end of the wire structure 3 close to the first conductive layer 21 protrudes outward like the cornice of a house). When manufacturing an electronic device according to this design scheme, the problem that the first conductive layer 21 is etched off due to process errors, resulting in component open circuit, can be solved, and the product yield can be improved. For the specific technical principle, please refer to the description of the preparation method embodiment below.

[0057] In summary, in the embodiment of the present invention, the wire structure is provided to include a first wire section and a second wire section that are connected to each other. The first wire section and the second wire section are both located on the side of the first conductive layer away from the substrate. In the direction parallel to the plane where the substrate is located, the first wire section is located on the side of the second wire section closer to the geometric center of the first conductive layer. Among them, the second wire section is in contact with the first conductive layer, and a gap is formed between the relative surfaces of the first wire section and the first conductive layer, so that the wire structure resembles a "cornice" structure. In this way, when manufacturing an electronic device according to this design, the problem that the conductive layer (such as the first conductive layer) of the component is etched due to process errors in the existing design scheme, resulting in device open circuit, can be solved, and the product yield can be improved by improving the connection design between the component and the wire structure.

[0058] Refer to Figure 3, optionally, along the direction of the second wire segment 302 pointing to the first wire segment 301, the height of the notch Q increases in the direction perpendicular to the plane where the substrate 1 is located. With such a setting, it is beneficial to the film formation yield during the preparation of the wire structure, reduces the risk of open circuit in the wire structure, and improves the product yield.

[0059] Continue to refer to Figure 3 , as a feasible implementation manner, optionally, the cross-sectional shape of the first wire segment 301 on the first cross-section (such as Figure 3 the cross-section shown) is arc-shaped; wherein, the first cross-section is perpendicular to the plane where the substrate 1 is located and parallel to the extending direction of the second wire segment 302. Among them, the extending direction of the second wire segment 302 can be specifically understood as the current flowing direction in the second wire segment 302, such as Figure 3 the current flowing direction i shown.

[0060] Of course, the cross-sectional shape of the first wire segment 301 on the first cross-section is not limited to arc-shaped. In other embodiments, optionally, the cross-sectional shape of the first wire segment 301 on the first cross-section is step-shaped, or it can be called stepped or stepped, the step surface of the step is parallel to the plane where the substrate 1 is located, and the side wall of the step intersects with the plane where the substrate 1 is located (not limited to orthogonal), and the embodiments of the present invention do not limit this.

[0061] Such as Figure 3 shown, when the component 2 is a thin film resistor; optionally, the wire structure 3 in the electronic device includes a first wire structure 3a and a second wire structure 3b; the first wire structure 3a is in contact with the input end of the first conductive layer 21, and the second wire structure 3b is in contact with the output end of the first conductive layer 21; along the direction parallel to the plane where the substrate 1 is located (such as Figure 3 the current flowing direction i in), the input end and the output end of the first conductive layer 21 are located on opposite sides of the geometric center of the first conductive layer 21.

[0062] Among them, the first wire structure 3a and the second wire structure 3b can be respectively understood as the input wire and the output wire of the thin film resistor, and the thin film resistor is electrically connected to the external circuit through the first wire structure 3a and the second wire structure 3b. Such as Figure 3 shown, for the design of the thin film resistor device, both the first wire structure 3a and the second wire structure 3b can be designed with reference to the above description to avoid the first conductive layer 21 being etched and causing an open circuit defect in the thin film resistor.

[0063] It should be noted that the wire structure 3 can be composed of one metal layer or can be formed by laminating at least two metal layers, and the embodiments of the present invention do not limit this.

[0064] Exemplarily, Figure 5It is a schematic structural diagram of another electronic device provided by an embodiment of the present invention. As Figure 5 shown, optionally, in a direction perpendicular to the plane where the substrate 1 is located, the wire structure 3 includes a first wire layer 31 and a second wire layer 32 which are stacked; the second wire layer 32 is located on a side of the first wire layer 31 away from the substrate, and the thickness of the second wire layer 32 is greater than that of the first wire layer 31. With such a setting, the overall thickness of the wire structure 3 can be increased, which is beneficial to improving the current-carrying capacity of the electronic device.

[0065] Exemplarily, for the first wire layer 31 with a relatively thin thickness, it can be formed by a metal evaporation or metal sputtering process. For the second wire layer 32 with a relatively large thickness, an electroplating process can be used to reduce the preparation difficulty.

[0066] Optionally, the first wire layer 31 has adhesiveness. With such a setting, a good adhesion foundation can be provided by the first wire layer 31, the bonding force between the first wire layer 31 and the substrate 1, the first conductive layer 21, and the second wire layer 32 can be improved, so that the wire structure 3 and the substrate 1 and the first conductive layer 21 form a firm combination, further improving the product stability.

[0067] In a second aspect, based on the same inventive concept, the present invention further provides a method for manufacturing an electronic device, which is used to manufacture the electronic device provided by any embodiment of the present invention above. Figure 6 It is a schematic flowchart of a method for manufacturing an electronic device provided by an embodiment of the present invention. As Figure 6 shown, the manufacturing method may include the following steps:

[0068] S110. Provide a substrate.

[0069] S120. Form components on one side of the substrate; the components include a first conductive layer.

[0070] S130. Form a wire structure on one side of the substrate; the wire structure includes a first wire section and a second wire section which are connected to each other. Both the first wire section and the second wire section are located on a side of the first conductive layer away from the substrate; the second wire section is in contact with the first conductive layer; in a direction parallel to the plane where the substrate is located, the first wire section is located on a side of the second wire section close to the geometric center of the first conductive layer, and a gap is formed between the opposite surfaces of the first wire section and the first conductive layer.

[0071] Referring to the above description, by improving the connection design between the components and the wire structure in the embodiment of the present invention, when manufacturing an electronic device according to this design, the open-circuit problem of the components inside the device can be solved, and the product yield can be improved.

[0072] Taking the case where the conductive structure is composed of a single layer of metal as an example, the preparation process of the electronic device will be further explained to facilitate understanding of the technical principle of the technical solution of the embodiments of the present invention.

[0073] Exemplarily, Figure 7 is the preparation flow chart provided by the embodiments of the present invention corresponding to Figure 3 the electronic device shown. Referring to Figure 7 , taking the electronic device as a thin film resistor as an example, its preparation process is as follows: First, a component 2 is formed on one side of the substrate 1. Then, a first photoresist 04 is formed on the side of the first conductive layer 21 of the component 2 away from the substrate 1 by using a photolithography process. The first conductive layer 21 is covered and protected by the first photoresist 04 in a partial area (such as area S1). Next, a wire metal layer 030 is formed on the side of the first photoresist 04 away from the substrate 1. Then, a second photoresist 05 is formed on the side of the wire metal layer 030 away from the substrate 1 by using a photolithography process. The wire metal layer 030 is covered and protected by the second photoresist 05 in a partial area (such as area S2). Then, an etching process is used to remove the part of the wire metal layer exposed by the second photoresist 05, and only the wire structure 3 is retained. Finally, the first photoresist 04 and the second photoresist 05 are peeled off, and the Figure 3 electronic device shown can be formed.

[0074] Figure 8 is the preparation flow chart corresponding to Figure 1 the electronic device shown, and its preparation process sequence is the same as that of Figure 7 the preparation process sequence shown, and will not be elaborated here. However, referring to Figure 8 , it is obvious that if the electronic device is prepared according to the existing product design scheme shown in Figure 1 , the area S1 to be protected by the first photoresist 04 and the area S2 to be protected by the second photoresist 05 need to be adjacent to each other, which requires a very high precision for the photolithography process. Once there is a position deviation in the actual formation position of any one of the first photoresist 04 and the second photoresist 05 due to process errors, or there is a size deviation in any one of the first photoresist 04 and the second photoresist 05 due to process errors, the conductive layer 021 of the component is likely to be mis-etched when the wire metal layer 030 is etched, resulting in the problem of component open circuit; Exemplarily, if the actual position of the second photoresist 05 is shifted to the left by a certain distance based on the position shown in Figure 8 , it is easy to occur that Figure 2 the left side of the component shown is etched off, resulting in an open circuit. In contrast, referring to Figure 7, when preparing an electronic device according to the design solution of the embodiment of the present invention, a part of the area S2 to be protected by the second photoresist 05 falls within the range of the area S1 to be protected by the first photoresist 04, which can significantly reduce the accuracy requirements for the lithography process, and effectively protect the first conductive layer 21 of the component by using the first photoresist 04, solve the problem of component open circuit caused by process errors, and improve the product yield.

[0075] In addition, referring to Figure 5 , as a feasible implementation manner, the wire structure 3 includes a first wire layer 31 and a second wire layer 32 stacked in a direction perpendicular to the plane where the substrate 1 is located, and the thickness of the second wire layer 32 is greater than the thickness of the first wire layer 31. Hereinafter, for this implementation manner, an exemplary description of the manufacturing method of the electronic device will be given. Exemplarily, Figure 9 is a schematic flowchart of another manufacturing method of the electronic device provided by the embodiment of the present invention. As shown in Figure 9 , when the wire structure includes a first wire layer and a second wire layer stacked in a direction perpendicular to the plane where the substrate is located, the manufacturing method of the electronic device may include the following steps:

[0076] S210. Provide a substrate.

[0077] S220. Form a component on one side of the substrate; the component includes a first conductive layer.

[0078] S230. Form a first sacrificial layer on the side of the first conductive layer away from the substrate; the orthographic projection of the first sacrificial layer on the substrate is located within the orthographic projection of the first conductive layer on the substrate.

[0079] S240. Form a first metal layer on the side of the first sacrificial layer away from the substrate; the first metal layer covers the first sacrificial layer, the first conductive layer, and a part of the substrate.

[0080] S250. Form a second sacrificial layer on the side of the first metal layer away from the substrate; the orthographic projection of the second sacrificial layer on the substrate is located within the orthographic projection of the first sacrificial layer on the substrate.

[0081] S260. Form a second metal layer on the side of the first metal layer away from the substrate; the second metal layer is located outside the area where the second sacrificial layer is located and covers the first metal layer; in the direction perpendicular to the plane where the substrate is located, the thickness of the second metal layer is greater than the thickness of the first metal layer.

[0082] Figure 10 is the main manufacturing flowchart of the electronic device corresponding to Figure 9 , taking the electronic device as a thin film resistor device as an example for illustration. As shown in Figure 10As shown in (a) of the figure, components 2, a first sacrificial layer 4, a first metal layer 310, a second sacrificial layer 5, and a second metal layer 320 are sequentially formed on one side of a substrate 1. Among them, the orthographic projection of the first sacrificial layer 4 on the substrate 1 is located within the orthographic projection of the first conductive layer 21 on the substrate 1, and the orthographic projection of the second sacrificial layer 5 on the substrate 1 is located within the orthographic projection of the first sacrificial layer 4 on the substrate 1. The first metal layer 310 can be understood as the film layer where the above-mentioned first wire layer 31 is located. The first metal layer 310 covers the first sacrificial layer 4, the first conductive layer 21, and part of the substrate 1; the second metal layer 320 can be understood as the film layer where the above-mentioned second wire layer 32 is located. The second metal layer 320 is located outside the area where the second sacrificial layer 5 is located and covers the first metal layer 310. Along the direction perpendicular to the plane where the substrate 1 is located, the thickness of the second metal layer 320 is greater than the thickness of the first metal layer 310.

[0083] Combined with the above description, optionally, the materials of the first sacrificial layer 4 and the second sacrificial layer 5 include photoresist. In other words, the first sacrificial layer 4 and the second sacrificial layer 5 can be formed by a lithography process. In this embodiment, by setting the orthographic projection of the second sacrificial layer 5 on the substrate 1 to be located within the orthographic projection of the first sacrificial layer 4 on the substrate 1, the design goal of the wire structure 3 resembling a "flying eave" structure is achieved. In addition, when manufacturing the first sacrificial layer 4 and the second sacrificial layer 5, it is also beneficial to reduce the precision requirements for the lithography process, and at the same time, the first sacrificial layer 4 can be used to effectively protect the first conductive layer 21 and avoid component open circuits.

[0084] Referring to Figure 10 , the first sacrificial layer 4 includes opposite first surface F1 and second surface F2. The first surface F1 is located on the side of the second surface F2 away from the substrate 1. Preferably, the orthographic projection of the second sacrificial layer 5 on the substrate 1 is located within the orthographic projection of the first surface F1 of the first sacrificial layer 4 on the substrate 1. With such a setting, it is beneficial to ensure the length of the "flying eave" part (i.e., the above-mentioned first wire branch 301) in the wire extension direction, and at the same time, it can effectively reduce the precision requirements for the lithography process during the preparation process and avoid component open circuits.

[0085] Referring to Figure 10 , optionally, the thickness of the second sacrificial layer 5 is greater than the thickness of the first sacrificial layer 4 to form a relatively thick second metal layer 320 and a relatively thin first metal layer 310, so that the thickness of the second metal layer 320 is greater than the thickness of the first metal layer 310, while avoiding the risk of increased wire breakage of the first metal layer 310 due to the excessive thickness of the first sacrificial layer 4. It should be noted that Figure 10 only the case where the thickness of the second sacrificial layer 5 is greater than the thickness of the second metal layer 320 is taken as an example for illustration. In other embodiments, it is optional that the thickness of the second sacrificial layer 5 is equal to the thickness of the second metal layer 320.

[0086] As described above, optionally, the first metal layer 310 is formed by metal evaporation or metal sputtering process; the second metal layer 320 is formed by electroplating process. When the second metal layer 320 is formed by electroplating process, a metal film layer can be formed corresponding to the part of the first metal layer 310 not covered by the second sacrificial layer 5, so that the second metal layer 320 is located outside the area where the second sacrificial layer 5 is located and covers the part of the first metal layer 310 not covered by the second sacrificial layer 5, obtaining the second wire layer 32, and the process is simpler.

[0087] S270. Remove the second sacrificial layer to expose part of the first metal layer.

[0088] As Figure 10 shown in (a) and (b) of [], by removing the second sacrificial layer 5, the part of the first metal layer 310 located below the second sacrificial layer 5 can be exposed. Exemplarily, when the second sacrificial layer 5 is made of photoresist, it can be removed by a developing solution.

[0089] S280. Remove the exposed part of the first metal layer and retain the part of the first metal layer in contact with the second metal layer.

[0090] As Figure 10 shown in (b) and (c) of [], the exposed part (i.e., the part not covered by the second wire layer 32) of the first metal layer 310 is removed, and only the part of the first metal layer 310 in contact with the second metal layer 320 is retained, so that the first wire layer 31 can be obtained. Exemplarily, the exposed part of the first metal layer 310 can be removed by an etching process. During the etching process of the first metal layer 310, since there is a first sacrificial layer 4 below the part of the first metal layer 310 to be etched, the first conductive layer 21 can be effectively protected by the first sacrificial layer 4, avoiding etching the first conductive layer 21 during the etching process of the first metal layer 310, and thus avoiding component open circuit.

[0091] S290. Remove the first sacrificial layer to form a wire structure.

[0092] As Figure 10 shown in (c) and (d) of [], after removing the first sacrificial layer 4, the first wire layer 31 and the second wire layer 32 are stacked to form a wire structure 3 in the shape of a "cornice". Exemplarily, when the first sacrificial layer 4 is made of photoresist, it can be removed by a developing solution.

[0093] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An electronic device, characterized in that, Comprising: Substrate; Components, located on one side of the substrate; the components include a first conductive layer; Wire structure; The wire structure includes a first wire section and a second wire section connected to each other. Both the first wire section and the second wire section are located on the side of the first conductive layer away from the substrate; the second wire section is in contact with the first conductive layer; along the direction parallel to the plane where the substrate is located, the first wire section is located on the side of the second wire section closer to the geometric center of the first conductive layer, and a notch is formed between the opposite surfaces of the first wire section and the first conductive layer.

2. The electronic device according to claim 1, wherein Along the direction from the second wire section to the first wire section, the height of the notch increases in the direction perpendicular to the plane where the substrate is located.

3. The electronic device according to claim 1, wherein The cross-sectional shape of the first wire section in a first cross-section is arc-shaped or stepped; Wherein, the first cross-section is perpendicular to the direction of the plane where the substrate is located and parallel to the extension direction of the second wire section.

4. The electronic device according to claim 1, characterized in that, Along the direction perpendicular to the plane where the substrate is located, the wire structure includes a first wire layer and a second wire layer arranged in a stacked manner; The second wire layer is located on the side of the first wire layer away from the substrate, and the thickness of the second wire layer is greater than the thickness of the first wire layer.

5. The electronic device according to claim 4, characterized in that, The first wire layer has adhesiveness.

6. The electronic device according to claim 1, wherein The components include a thin film resistor; The wire structure includes a first wire structure and a second wire structure; the first wire structure is in contact with the input end of the first conductive layer, and the second wire structure is in contact with the output end of the first conductive layer; Along the direction parallel to the plane where the substrate is located, the input end and the output end are located on opposite sides of the geometric center of the first conductive layer.

7. A method for manufacturing an electronic device, for manufacturing the electronic device according to any one of claims 1-6; characterized in that, The preparation method includes: Providing a substrate; Forming components on one side of the substrate; the components include a first conductive layer; Forming a wire structure on one side of the substrate; the wire structure includes a first wire section and a second wire section connected to each other. Both the first wire section and the second wire section are located on the side of the first conductive layer away from the substrate; the second wire section is in contact with the first conductive layer; along the direction parallel to the plane where the substrate is located, the first wire section is located on the side of the second wire section closer to the geometric center of the first conductive layer, and a notch is formed between the opposite surfaces of the first wire section and the first conductive layer.

8. The preparation method according to claim 7, characterized in that, Along the direction perpendicular to the plane where the substrate is located, the wire structure includes a first wire layer and a second wire layer arranged in a stacked manner; Forming a wire structure on one side of the substrate, including: Forming a first sacrificial layer on the side of the first conductive layer away from the substrate; the orthographic projection of the first sacrificial layer on the substrate is located within the orthographic projection of the first conductive layer on the substrate; Forming a first metal layer on the side of the first sacrificial layer away from the substrate; the first metal layer covers the first sacrificial layer, the first conductive layer, and a part of the substrate; A second sacrificial layer is formed on a side of the first metal layer away from the substrate; a positive projection of the second sacrificial layer on the substrate is located within a positive projection of the first sacrificial layer on the substrate; A second metal layer is formed on a side of the first metal layer away from the substrate; the second metal layer is located outside a region where the second sacrificial layer is located and covers the first metal layer; in a direction perpendicular to a plane where the substrate is located, a thickness of the second metal layer is greater than a thickness of the first metal layer; The second sacrificial layer is removed to expose a part of the first metal layer; A part of the first metal layer in an exposed state is removed, and a part of the first metal layer in contact with the second metal layer is retained; The first sacrificial layer is removed to form the wire structure.

9. The preparation method according to claim 8, wherein Materials of the first sacrificial layer and the second sacrificial layer include photoresist.

10. The preparation method according to claim 8, wherein The first metal layer is formed by a metal evaporation or metal sputtering process; the second metal layer is formed by an electroplating process.

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