Tantalum capacitor

Abstract

The present disclosure provides a tantalum capacitor including: an insulating material having one surface in which a recess is formed, the recess having a bottom surface lower than the one surface of the insulating material; and a tantalum body disposed on the bottom surface and including a tantalum element body and a tantalum wire passing through a portion of the tantalum element body in a first direction. The tantalum capacitor further includes a molded portion formed to surround the tantalum body, the molded portion having a fifth surface and a sixth surface opposite to each other in the first direction, a third surface and a fourth surface opposite to each other in the second direction, and a first surface and a second surface opposite to each other in the third direction. The tantalum capacitor also includes a first external electrode and a second external electrode connected to the tantalum body and spaced apart from each other in the first direction.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2023-0196012, filed with the Korean Intellectual Property Office on December 29, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a tantalum capacitor. Background Art

[0003] Tantalum (Ta) material has become a metal widely used in industries including electrical and electronics, machinery, chemical engineering, medical, aerospace, and defense industries due to its mechanical and physical properties such as high melting point, excellent ductility, and corrosion resistance.

[0004] In particular, among all metals, tantalum is widely used as a positive electrode material for small-sized capacitors due to its property of forming the most stable anodic oxide film.

[0005] In addition, due to the recent rapid development of the IT industry such as electronics, information, and communication, the use of tantalum material has been increasing rapidly every year.

[0006] A tantalum capacitor can connect a tantalum body and electrodes to each other using an internal lead frame or a mounting tab, and then an epoxy molding compound (EMC) can be formed to complete the tantalum capacitor. In this case, an interface may occur between the lead frame / mounting tab and the EMC, and defects such as moisture penetration and cracks may occur depending on the adhesion strength. Summary of the Invention

[0007] One aspect of the present disclosure provides a tantalum capacitor having excellent reliability by enhancing the interface of the tantalum capacitor.

[0008] Another aspect of the present disclosure provides a tantalum capacitor including a tantalum body having excellent mounting accuracy and excellent connection reliability.

[0009] According to one aspect of the present disclosure, there is provided a tantalum capacitor including: an insulating material having a surface in which a recess is formed, the recess having a bottom surface lower than the surface; a tantalum body disposed on the bottom surface, the tantalum body including a tantalum element body and a tantalum wire, the tantalum wire passing through a part of the tantalum element body in a first direction; a molding part having a fifth surface and a sixth surface opposite to each other in the first direction, a third surface and a fourth surface opposite to each other in a second direction, and a first surface and a second surface opposite to each other in a third direction, the molding part being formed to surround the tantalum body; and a first external electrode and a second external electrode connected to the tantalum body and spaced apart from each other in the first direction.

[0010] According to another aspect of the present disclosure, a tantalum capacitor is provided, including: an insulating material having a surface on which a protrusion protruding from the surface is formed; a tantalum body disposed on the insulating material, the tantalum body including a tantalum element body and a tantalum wire, the tantalum wire passing through a part of the tantalum element body in a first direction; a molding part having a fifth surface and a sixth surface opposite to each other in the first direction, a third surface and a fourth surface opposite to each other in a second direction, and a first surface and a second surface opposite to each other in a third direction, the molding part being formed to surround the tantalum body; and a first external electrode and a second external electrode connected to the tantalum body, wherein the first external electrode and the second external electrode are spaced apart from each other in the first direction, and wherein the protrusion of the insulating material supports the tantalum wire.

[0011] According to another aspect of the present disclosure, a tantalum capacitor is provided, including: an insulating material having a recess formed on a surface of the insulating material, the recess having a bottom surface lower than the surface and side surfaces connecting the bottom surface to the surface; a tantalum body disposed on the bottom surface of the recess; a molding part formed to surround and cover the tantalum body, the molding part including a first surface, a second surface opposite to the first surface in a first direction, a third surface, and a fourth surface opposite to the third surface in a second direction different from the first direction; a retraction layer disposed on a part of the tantalum body and at least partially disposed within the recess, the retraction layer contacting the bottom surface of the recess and extending along the side surfaces of the recess; and a first external electrode and a second external electrode connected to the tantalum body and spaced apart from each other in the first direction, wherein the retraction layer connects the tantalum body to the second external electrode.

[0012] According to an exemplary embodiment of the present disclosure, the tantalum capacitor can have excellent reliability by enhancing the interface of the tantalum capacitor.

[0013] According to an exemplary embodiment of the present disclosure, the tantalum capacitor can include a tantalum body having excellent mounting accuracy and excellent connection reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The above and other aspects, features, and advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view of a tantalum capacitor according to the present disclosure; Figure 2 is a view showing an insulating material of a tantalum capacitor according to the present disclosure; Figure 3 is a view showing the tantalum capacitor according to the present disclosure as observed in a second direction; Figure 4 is Figure 3 an enlarged view of part A of Figure 5 is Figure 1 a cross-sectional view taken along line I-I' of Figure 6 is a view showing the tantalum capacitor according to the present disclosure as observed in the first direction. DETAILED DESCRIPTION

[0015] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings. However, the present disclosure can be illustrated in many different forms and should not be construed as limited to the specific exemplary embodiments set forth herein. In addition, the exemplary embodiments of the present disclosure are provided to more completely describe the present disclosure to those skilled in the art. Therefore, for clarity of description, the shapes and sizes of the elements in the drawings may be exaggerated, and the elements denoted by the same reference numerals in the drawings refer to the same elements.

[0016] Hereinafter, preferred exemplary embodiments of the present disclosure will be described with reference to the drawings.

[0017] In the drawings, the X direction may be defined as the first direction, the L direction, or the length direction, the Y direction may be defined as the second direction, the W direction, or the width direction, and the Z direction may be defined as the third direction, the T direction, or the thickness direction.

[0018] Here, the first direction (X direction), the second direction (Y direction), and the third direction (Z direction) are perpendicular to each other. In the following description, each of the first direction (X direction), the second direction (Y direction), and the third direction (Z direction) may represent two directions. For example, the third direction (Z direction) may include an upward direction and a downward direction based on the drawings.

[0019] Figure 1 is a perspective view of the tantalum capacitor according to the present disclosure. Figure 2 is a view showing the insulating material of the tantalum capacitor according to the present disclosure. Figure 3 is a view showing the tantalum capacitor according to the present disclosure as observed in the second direction. Figure 4 is Figure 3 an enlarged view of part A of Figure 5 is Figure 1 a cross-sectional view taken along line I-I' of Figure 6 is a view showing the tantalum capacitor according to the present disclosure as observed in the first direction.

[0020] Referring to Figure 1 and Figure 3, the tantalum capacitor 1000 according to the exemplary embodiment may include a tantalum body 100, a molding part 200, an insulating material 300, and outer electrodes 510 and 520, and may further include a back-off layer 400.

[0021] The tantalum body 100 may include a tantalum element body 110 and a tantalum wire 150 passing through a part of the tantalum element body 110 in the first direction ( Figure 5 ).

[0022] Here, the tantalum wire 150 may pass through a part of the tantalum element body 110 in the first direction (X direction). Before the mixture of tantalum powder and binder is pressed, the tantalum wire 150 may be inserted and installed in the mixture of tantalum powder and binder to deviate from the center of the mixture. That is, the tantalum body 100 may be manufactured by inserting the tantalum wire 150 into the tantalum powder mixed with the binder, forming the tantalum element body 110 of a desired size, and then sintering the tantalum element body 110 under high temperature and high vacuum (10 -5 Torr or lower) conditions for about 30 minutes.

[0023] The tantalum body 100 may be disposed on the bottom surface of the recess R of the insulating material 300 as described below.

[0024] The molding part 200 may be formed to surround the tantalum body 100 and may be disposed on one surface of the insulating material 300 as described below.

[0025] The molding part 200 may have a fifth surface and a sixth surface opposite to each other in the first direction (X direction), a third surface and a fourth surface opposite to each other in the second direction, and a first surface and a second surface opposite to each other in the third direction.

[0026] The molding part 200 of the tantalum capacitor according to the present disclosure may be formed by transfer molding a resin (such as an epoxy molding compound (EMC), etc.) to surround the tantalum body 100. The molding part 200 may protect the tantalum wire 150 and the tantalum body 100 from external factors.

[0027] The first outer electrode 510 and the second outer electrode 520 are spaced apart in the first direction (X direction) and connected to the tantalum body 100. Specifically, the first outer electrode 510 and the second outer electrode 520 may be respectively disposed on the fifth surface and the sixth surface of the molding part 200.

[0028] The first outer electrode 510 may be connected to the tantalum wire 150 to be used as a terminal when mounted on a board. The first outer electrode 510 may be used as the positive electrode of the tantalum capacitor 1000 according to the present disclosure.

[0029] When mounted on a board, the second external electrode 520 can be connected to the tantalum body 100 to be used as a terminal. The second external electrode 520 can be connected to the tantalum body 100 through the retraction layer 400 as described below. The second external electrode 520 can be used as the negative electrode of the tantalum capacitor 1000 according to the present disclosure.

[0030] The first external electrode 510 and the second external electrode 520 can extend to the other surface (lower surface) of the insulating material 300 as described below. That is, the first external electrode 510 can extend from the fifth surface of the molding part 200 to the other surface (lower surface) of the insulating material 300, and the second external electrode 520 can extend from the sixth surface of the molding part 200 to the other surface (lower surface) of the insulating material 300.

[0031] The first external electrode 510 and the second external electrode 520 can include a metal with excellent conductivity. Specifically, the first external electrode 510 and the second external electrode 520 can be formed of a conductive metal including nickel (Ni), tin (Sn), copper (Cu), chromium titanium intermetallic compound (Cr(Ti)), palladium (Pd), iron (Fe), and / or their alloys.

[0032] The first external electrode 510 and the second external electrode 520 can be formed as a plating layer, and plating methods (such as sputtering process, subtractive process, additive process, semi-additive process (SAP), modified semi-additive process (MSAP)) or similar methods can be used, but the present disclosure is not limited thereto. When the first external electrode 510 and the second external electrode 520 are formed using a plating layer, a thin electrode with high density and low resistance can be formed.

[0033] Figure 5 is a cross-sectional view taken along Figure 1 the line I-I'.

[0034] Referring to Figure 5 , the tantalum body 100 of the tantalum capacitor 1000 according to an exemplary embodiment of the present disclosure can include: a tantalum element body 110 formed by sintering a molding body including metal powder; a conductive polymer layer 120 disposed on the tantalum element body 110; a carbon layer 130 disposed on the conductive polymer layer 120; and a silver (Ag) layer 140 disposed on the carbon layer 130.

[0035] The tantalum capacitor 1000 can further include a tantalum wire 150 having an insertion region inside the tantalum element body 110 and a non-insertion region outside the tantalum element body 110.

[0036] The tantalum element body 110 can be formed by sintering a molding body including metal powder and a binder.

[0037] Specifically, the tantalum element body 110 can be manufactured in the following manner: mixing metal powder, binder, and solvent in a predetermined ratio, stirring the mixture, pressing the mixture to form a molded body having a rectangular parallelepiped shape, and then sintering the molded body under high temperature and high vacuum.

[0038] The metal powder is not limited as long as it can be used for the tantalum element body 110 of the tantalum capacitor 1000 according to the exemplary embodiments of the present disclosure, and it can be tantalum (Ta) powder. However, the present disclosure is not limited thereto, and the metal powder can be one or more selected from the group consisting of aluminum (Al), niobium (Nb), vanadium (V), titanium (Ti), and zirconium (Zr). Therefore, an aluminum element body, a niobium element body, etc. can also be used instead of the tantalum element body.

[0039] The binder is not limited, and it can be, for example, a cellulose-based binder.

[0040] The cellulose-based binder can be one or more selected from the group consisting of nitrocellulose, methylcellulose, ethylcellulose, and hydroxypropylcellulose.

[0041] In addition, before pressing the mixture, the tantalum wire 150 can be inserted and installed in the mixture to deviate from the center of the mixture.

[0042] According to the exemplary embodiments of the present disclosure, a dielectric oxide layer can be formed on the tantalum element body 110 as an insulating layer. That is, the dielectric oxide layer can be formed by growing an oxide film (Ta2O5) on the surface of the tantalum element body 110 using a formation process of an electrochemical reaction. Here, the dielectric oxide layer can change the tantalum element body 110 into a dielectric. In addition, a conductive polymer layer 120 having a negative polarity can be coated and formed on the dielectric oxide layer.

[0043] The conductive polymer layer 120 is not limited, and it can include, for example, a conductive polymer.

[0044] Specifically, the conductive polymer can be formed using 3,4-ethylenedioxythiophene (EDOT), pyrrole monomer, or polypyrrole by chemical polymerization or electrolytic polymerization, and then can be formed on the outer surface of the tantalum element body 110 on which the insulating layer is formed as a negative electrode layer having a conductive polymer negative electrode.

[0045] That is, the conductive polymer layer 120 can be formed using a polymer slurry, and the polymer slurry can include at least one of polypyrrole, polyaniline, and 3,4-ethylenedioxythiophene (EDOT). In addition, the conductive polymer layer 120 can include poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). PEDOT:PSS can be prepared by oxidative polymerization of EDOT using poly(styrenesulfonate) (PSS) as a template for balancing charges.

[0046] The carbon layer 130 can be laminated on the conductive polymer layer 120, and can be laminated in the following manner: dissolving carbon powder in an organic solvent including epoxy resin, dipping the tantalum element body 110 in the solution in which the carbon powder is dissolved, and then drying it at a predetermined temperature to volatilize the organic solvent.

[0047] In addition, the carbon layer 130 can prevent silver (Ag) ions from passing through.

[0048] Then, a silver (Ag) layer 140 formed of silver (Ag) paste can be applied on the upper surface of the carbon layer 130.

[0049] The silver (Ag) layer 140 can be laminated on the outer surface of the carbon layer 130 to improve conductivity.

[0050] In addition, the silver (Ag) layer 140 can improve the conductivity with respect to the polarity of the negative electrode layer, thereby promoting the electrical connection for polarity transfer.

[0051] Reference will be made to Figure 2 and Figure 3 to describe in detail the insulating material 300 of the tantalum capacitor 1000 according to the present disclosure.

[0052] The insulating material 300 can have one surface 311 and another surface that face each other in the third direction (Z direction). Referring to Figure 2 , one surface 311 can refer to the upper surface of the insulating material 300, and another surface can refer to the lower surface of the insulating material 300.

[0053] The insulating material 300 can include a recess R and a protrusion P on one surface 311.

[0054] The recess R can be formed in one surface 311 of the insulating material 300, and can have a bottom surface 321 that is lower than one surface 311.

[0055] The tantalum body 100 can be disposed in the recess R, specifically on the bottom surface 321 of the recess R. That is, the tantalum body 100 can be disposed on the bottom surface 321 that is lower than one surface 311, so as to be more stably and precisely mounted on the insulating material 300.

[0056] The lower surface (for example, the lower surface in the Z direction) of the tantalum body 100 can be lower than one surface 311 of the insulating material 300, while the upper surface (for example, the upper surface in the Z direction) of the tantalum body 100 can be higher than one surface 311 of the insulating material 300.

[0057] The recess R can further include a side surface 322 that connects one surface 311 of the insulating material to the bottom surface 321.

[0058] The side surface 322 of the recess R may be spaced apart from the tantalum body 100. In other words, the side surface 322 of the recess R does not contact the tantalum body 100, and a gap may exist between the side surface 322 of the recess R and the tantalum body 100. As described below, a part of the retraction layer 400 may be disposed in this gap (space). When the metal paste is coated on one surface of the tantalum body 100 (for example, one surface in the first direction) to form the retraction layer 400, the metal paste may enter a part of the recess R, preventing the retraction layer 400 from overflowing unnecessarily and ensuring the uniform formation of the retraction layer 400.

[0059] The recess R may further have an inclined surface 323 connecting one surface 311 of the insulating material 300 to the bottom surface 321. The inclined surface 323 of the recess R may have an inclination angle with respect to one surface 311 of the insulating material 300.

[0060] The inclined surface 323 of the recess R may be spaced apart from the tantalum body 100.

[0061] The inclined surface of the recess R may have an inclination angle, increasing the mounting accuracy of the tantalum body 100. For example, in the vibration alignment method, the tantalum body 100 may slide down along the inclined surface and be positioned on the bottom surface of the recess R.

[0062] The recess R may have both a side surface 322 and an inclined surface 323, but the present disclosure is not necessarily limited thereto, and may include only one of the side surface 322 and the inclined surface 323, and not include the other of the side surface 322 and the inclined surface 323.

[0063] A protrusion P may be formed on one surface 311 of the insulating material 300 and protrude from the one surface 311.

[0064] The protrusion P may support the tantalum wire 150. Refer to Figure 6 , a groove G may be formed in the upper surface of the protrusion P (for example, the upper surface in the first direction) to support the tantalum wire 150 through the groove G, thereby improving the position distribution and stability of the tantalum wire 150. In addition, the tantalum wire 150 may be connected to the groove G.

[0065] The protrusion P may be spaced apart from the first external electrode 510 and the second external electrode 520.

[0066] The insulating material 300 may be electrically insulated from the first external electrode 510 and the second external electrode 520. Here, "insulation" refers to electrical insulation, which not only means preventing the flow of electrons (an approximately infinite resistance value), but also means having a high resistance compared to surrounding components or conductors. In other words, the insulating material 300 is made of a material that blocks the flow of current. For example, it may refer to a material having a conductivity of 10 -6 S / cm or less.

[0067] The insulating material 300 may include an epoxy resin, and specifically, may include EMC. The insulating material 300 may include the same material as that of the molding part 200 and may be in the form of a sheet.

[0068] According to the prior art, a tantalum capacitor may use a lead frame or a mounting sheet to fix the tantalum body 100, and then the molding part 200 may be formed to complete the tantalum capacitor. In this case, an interface may occur between the lead frame / mounting sheet and the EMC, and defects such as moisture penetration and cracks may occur depending on the adhesion strength.

[0069] Therefore, in the tantalum capacitor 1000 according to the present disclosure, the molding part 200 and the insulating material 300 may be formed of the same material to minimize the occurrence of an interface, thereby improving reliability. The tantalum capacitor 1000 according to the present disclosure has excellent reliability by enhancing the interface of the tantalum capacitor.

[0070] However, the present disclosure is not limited thereto, and the insulating material 300 may include a thermosetting resin and a photocurable resin.

[0071] The tantalum capacitor 1000 according to an exemplary embodiment of the present disclosure may further include a withdrawal layer 400.

[0072] The withdrawal layer 400 may be disposed on one surface of the tantalum body 100 to form a withdrawal structure as a negative electrode terminal (second external electrode).

[0073] The withdrawal layer 400 may connect the second external electrode 520 and the tantalum body 100 to each other, and at least a part of the withdrawal layer 400 may be disposed in the recess R.

[0074] In a tantalum capacitor according to the prior art, when the withdrawal layer 400 is formed on one surface of the tantalum body 100, the withdrawal layer 400 may be formed in an unpredictable direction depending on the viscosity of the withdrawal layer. In particular, when the withdrawal layer is exposed to the outside of the tantalum body, exposure defects may occur, affecting the reliability of the component.

[0075] Therefore, in the tantalum capacitor 1000 according to an exemplary embodiment of the present disclosure, a part of the withdrawal layer 400 may be disposed in the recess R.

[0076] Referring to Figure 3 and 4 , a part of the withdrawal layer 400 may be disposed in the recess R, and specifically, may be disposed between the side surface 322 of the recess R and one surface of the tantalum body 100.

[0077] The withdrawal layer 400 may be disposed between the inclined surface 323 of the recess R and one surface of the tantalum body 100.

[0078] The retraction layer 400 may be in contact with the bottom surface 321 of the recess R. Additionally, the retraction layer 400 may be in contact with the side surface 322 and the inclined surface 323 of the recess R.

[0079] As described above, at least a portion of the retraction layer 400 may be disposed in the recess R to prevent an overflow phenomenon during the formation of the retraction layer 400, and the retraction layer 400 may be uniformly formed on one surface of the tantalum body 100. Accordingly, the connection reliability between the tantalum body 100 and the second external electrode 520 can be improved.

[0080] The retraction layer 400 may include silver (Ag), palladium (Pd), gold (Au), nickel (Ni), copper (Cu), etc., and may be formed using a viscous conductive paste.

[0081] Methods such as dispensing, dipping, printing, etc. may be used to form the retraction layer 400 on one surface of the tantalum body 100, but the present disclosure is not limited thereto.

[0082] Although the exemplary embodiments have been shown and described above, it will be readily understood by those skilled in the art that modifications and variations can be made without departing from the scope of the present disclosure defined by the appended claims.

Claims

1. A tantalum capacitor, comprising: an insulating material having one surface, a recess formed in the one surface, the recess having a bottom surface lower than the one surface; A tantalum body disposed on the bottom surface, the tantalum body comprising a tantalum element body and a tantalum wire, the tantalum wire passing through a portion of the tantalum element body in a first direction; a molded portion having a fifth surface and a sixth surface opposite to each other in the first direction, a third surface and a fourth surface opposite to each other in the second direction, and a first surface and a second surface opposite to each other in the third direction, the molded portion being formed to surround the tantalum body; as well as A first external electrode and a second external electrode are connected to the tantalum body, wherein the first external electrode and the second external electrode are spaced apart from each other in the first direction.

2. The tantalum capacitor according to claim 1, wherein: An upper surface of the tantalum body is higher than the one surface of the insulating material.

3. The tantalum capacitor according to claim 1, wherein: The recess further has a side surface connecting the one surface of the insulating material to the bottom surface, and The side surface is spaced apart from the tantalum body.

4. The tantalum capacitor according to claim 1, wherein The recess further has an inclined surface connecting the one surface of the insulating material to the bottom surface, and The inclined surface has an inclined angle with respect to the one surface.

5. The tantalum capacitor according to claim 4, wherein: The inclined surface is spaced apart from the tantalum body.

6. The tantalum capacitor of claim 1, further comprising: A withdrawal layer connects the first external electrode and the tantalum body to each other, and at least a portion of the withdrawal layer is disposed in the recess.

7. The tantalum capacitor according to claim 6, wherein: The withdrawal layer is in contact with the bottom surface of the recess.

8. The tantalum capacitor according to claim 1, wherein: The second external electrode is connected to the tantalum wire.

9. The tantalum capacitor according to claim 1, wherein: The first external electrode and the second external electrode extend to the other surface of the insulating material opposite to the one surface.

10. The tantalum capacitor according to claim 1, wherein: The insulating material includes a protrusion formed on the one surface of the insulating material and protruding from the one surface, and The protrusion supports the tantalum wire.

11. The tantalum capacitor according to claim 1, wherein: The insulating material and the molded part include the same material.

12. A tantalum capacitor, comprising: an insulating material having a surface on which a protrusion protruding from the surface is formed; A tantalum body, disposed on the insulating material, the tantalum body comprising a tantalum element body and a tantalum wire, the tantalum wire passing through a portion of the tantalum element body in a first direction; a molded portion having a fifth surface and a sixth surface opposite to each other in the first direction, a third surface and a fourth surface opposite to each other in the second direction, and a first surface and a second surface opposite to each other in the third direction, the molded portion being formed to surround the tantalum body; as well as a first external electrode and a second external electrode connected to the tantalum body, wherein the first external electrode and the second external electrode are spaced apart from each other in the first direction, Wherein, the protrusion of the insulating material supports the tantalum wire.

13. The tantalum capacitor according to claim 12, wherein: A groove is formed in the protrusion, and The tantalum wire is connected to the groove.

14. The tantalum capacitor according to claim 12, wherein: The protrusion is spaced apart from the first and second external electrodes.

15. The tantalum capacitor according to claim 12, wherein: The first external electrode and the second external electrode extend to the other surface of the insulating material opposite to the one surface.

16. A tantalum capacitor, comprising: an insulating material having a recessed portion formed on one surface of the insulating material, the recessed portion having a bottom surface lower than the one surface and a side surface connecting the bottom surface to the one surface; a tantalum body disposed on the bottom surface of the recess; a molded portion formed to surround and cover the tantalum body, the molded portion comprising a first surface, a second surface opposite to the first surface in a first direction, a third surface, and a fourth surface opposite to the third surface in a second direction, the second direction being different from the first direction; a withdrawal layer disposed on a portion of the tantalum body and at least partially within the recess, the withdrawal layer contacting the bottom surface of the recess and extending along the side surface of the recess; A first external electrode and a second external electrode are connected to the tantalum body and are spaced apart from each other in the first direction, wherein the withdrawal layer connects the tantalum body to the second external electrode.

17. The tantalum capacitor of claim 16, wherein: The withdrawal layer includes a viscous conductive paste including at least one material selected from the group consisting of silver, palladium, gold, nickel, and copper.

18. The tantalum capacitor of claim 16, wherein: The molding part is formed by transfer molding resin, and the resin includes epoxy molding compound.

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