Focusing ion beam baffle mechanism and etching equipment

Abstract

The invention discloses a focused ion beam baffle plate mechanism and etching equipment, and the focused ion beam baffle plate mechanism comprises a connecting support which is installed in a reaction cavity of the etching equipment; the baffle plate is mounted on the connecting bracket, is arranged between a workpiece carrying table of the etching equipment and the focusing ion source, and is provided with a hole allowing a focusing ion beam emitted by the focusing ion source to pass through; a workpiece is placed on the workpiece carrying table, and the baffle is used for blocking reverse sputtering particles generated when a focused ion beam acts on the workpiece. When the etching equipment works, a focused ion beam emitted by the focused ion source can penetrate through a hole in a baffle of the focused ion beam baffle mechanism and act on a workpiece loaded on the workpiece carrying table. The baffle is located between the workpiece carrying table and the focused ion source, so that reverse sputtering particles generated when the focused ion beam acts on the workpiece can be blocked, and the reverse sputtering particles are prevented from polluting the focused ion source.

Description

Technical Field

[0001] The present invention relates to the technical field of etching equipment, and particularly to a focused ion beam baffle mechanism and an etching equipment. Background Art

[0002] With the development of semiconductor devices and filters, conventional ion beam etching (IBE) methods can no longer meet the etching requirements for high-precision lines and patterns. Therefore, ion beam trimming (IBT) / ion beam figuring (IBF) technologies with higher etching resolution have gradually developed. IBT / IBF uses a focused ion source to etch the surface of a workpiece. The beam width of the generated focused ion beam at the focus is generally 5-10 mm (FWHM). Through this small-range local etching process, the thickness at each position on the surface of the workpiece can be accurately controlled.

[0003] The focusing of the ion beam is mainly achieved by the focusing grid at the front end of the focused ion source. Different from the planar grid at the front end of the traditional ion source, the grid used in the focused ion source is a curved grid that is concave towards the bottom of the quartz cup. Through the curved surface structure of the grid, the emission direction of the ion beam can be effectively controlled, thereby causing the ion beam to focus.

[0004] Ion beam etching (specifically ion beam trimming or figuring) uses ions with a certain energy (generally neutralized Ar ions) to bombard the surface of the workpiece, causing the atoms on the surface of the workpiece to sputter, thereby achieving the etching effect. Therefore, during the etching process, the particles sputtered by the bombardment will undergo redeposition, contaminating the grid and the quartz cup with the back-sputtered particles generated by etching. Long-term redeposition contamination will cause a conductive layer to form on the inner wall of the quartz cup, resulting in the rupture of the quartz cup. In addition, after the grid is contaminated by redeposition, it will cause the grid to conduct electricity to the ground, damaging the structure and accuracy of the grid. This requires that during the production and processing process, the cavity needs to be opened regularly to replace the grid and clean the quartz cup, resulting in a decrease in production efficiency and an increase in production costs.

[0005] In summary, how to prevent the back-sputtered particles from contaminating the ion source is an urgent problem to be solved by those skilled in the art at present. Summary of the Invention

[0006] In view of this, the first object of the present invention is to provide a focused ion beam baffle mechanism to block the back-sputtered particles and avoid contaminating the ion source.

[0007] The second object of the present invention is to provide an etching equipment.

[0008] To achieve the first above-mentioned objective, the present invention provides the following solution:

[0009] A focused ion beam baffle mechanism for an etching device, comprising:

[0010] A connecting bracket, which is installed in the reaction chamber of the etching device;

[0011] A baffle installed on the connecting bracket, which is arranged between the workpiece stage and the focused ion source of the etching device, and a hole allowing the focused ion beam emitted by the focused ion source to pass through is provided on the baffle;

[0012] A workpiece is placed on the workpiece stage, and the baffle is used to block the back-sputtered particles generated when the focused ion beam acts on the workpiece.

[0013] In a specific embodiment, the connecting bracket can drive the baffle to move along a first direction;

[0014] The first direction is the length direction from the focused ion source to the workpiece stage.

[0015] In another specific embodiment, the connecting bracket is installed on the outer shell of the focused ion source, and the connecting bracket is a telescopic member, and the baffle is installed at the telescopic end of the connecting bracket;

[0016] Alternatively, the connecting bracket is slidably installed on the inner wall of the reaction chamber along the first direction.

[0017] In another specific embodiment, the distance between the baffle and the surface to be machined of the workpiece is greater than or equal to 5 mm and less than or equal to 20 mm.

[0018] In another specific embodiment, the focused ion beam baffle mechanism further includes a measuring device;

[0019] The measuring device is used to measure the focal length of the focused ion beam emitted by the focused ion source.

[0020] In another specific embodiment, the measuring device includes a current measuring module;

[0021] The current measuring module is electrically connected to the baffle and is used to measure the current value on the baffle, and calculate and obtain the focal length according to the measured current value.

[0022] In another specific embodiment, the baffle includes a fixed ring and an opening and closing structure;

[0023] The fixing ring is installed on the connection bracket, and the opening and closing structure is installed on the fixing ring and is used to block a part of the inner ring hole of the fixing ring to enclose the hole.

[0024] In another specific embodiment, the opening and closing structure includes blades and blade fixing pins;

[0025] An arc-shaped groove is formed in the fixing ring, the blade fixing pin is installed on the blade and is connected to the arc-shaped groove in a position-adjustable manner;

[0026] The number of the blades, the blade fixing pins and the arc-shaped grooves are respectively equal and are respectively arranged in a one-to-one correspondence. The blades are circumferentially distributed on the fixing ring around the center of the inner ring hole, and a plurality of the blades extend into the inner ring hole and block a part of the inner ring hole to enclose the hole.

[0027] In another specific embodiment, the opening and closing structure further includes a power component;

[0028] The power component is used for driving connection with the blade fixing pin to drive the blade fixing pin to slide in the arc-shaped groove, so as to adjust the size of the inner ring hole blocked by the blade.

[0029] In another specific embodiment, the baffle further includes a cover plate ring;

[0030] The cover plate ring is installed at one end of the fixing ring facing the workpiece stage and covers the arc-shaped groove.

[0031] In another specific embodiment, the focused ion beam baffle mechanism further includes a beam blocker;

[0032] The beam blocker is used to block the focused ion beam from bombarding the workpiece on the workpiece stage or the chamber wall of the reaction chamber.

[0033] In another specific embodiment, the beam blocker is installed on a moving stage for loading the workpiece stage, and the moving stage is used to drive the beam blocker to move to or move out of the position that can be bombarded by the focused ion beam.

[0034] In another specific embodiment, the hole is an equal-diameter round hole adapted to the focused ion beam at one end close to the focused ion source;

[0035] Alternatively, the hole is a hole with a gradually decreasing cross-section along the direction away from the focused ion source and adapted to the focused ion beam;

[0036] Alternatively, the hole is a hole whose end far from the focused ion source is adapted to the focused ion beam, and the cross-section of the end of the hole facing away from the focused ion source is larger than the cross-section of the end close to the focused ion source.

[0037] In another specific embodiment, the baffle is rotatably mounted on the connection bracket, and the rotation axis line of the baffle is parallel to the rotation axis line of the workpiece stage.

[0038] The various embodiments of the present invention can be arbitrarily combined as needed, and the embodiments obtained after these combinations are also within the scope of the present invention and are part of the specific implementation manners of the present invention.

[0039] To achieve the above second object, the present invention provides the following solutions:

[0040] An etching device, comprising a reaction chamber, a focused ion source, a workpiece stage, and a focused ion beam baffle mechanism as described in any one of the above;

[0041] The focused ion source, the workpiece stage, and the focused ion beam baffle mechanism are all installed in the reaction chamber;

[0042] The focused ion beam baffle mechanism is located between the focused ion source and the workpiece stage.

[0043] In a specific embodiment, the etching device further includes a moving stage;

[0044] The moving stage is installed in the reaction chamber, the workpiece stage is installed on the moving stage, and the moving stage is used to drive the workpiece stage to move along a second direction or a third direction;

[0045] Among the second direction, the third direction, and the first direction, any two are perpendicular to each other.

[0046] In another specific embodiment, the etching device further includes a support arm;

[0047] The support arm is installed on the moving stage, and the workpiece stage is rotatably installed on the support arm.

[0048] The various embodiments of the present invention can be arbitrarily combined as needed, and the embodiments obtained after these combinations are also within the scope of the present invention and are part of the specific implementation manners of the present invention.

[0049] The focused ion beam baffle mechanism provided by the present invention is used in an etching device, so that when the etching device works, the focused ion beam emitted by the focused ion source can pass through the holes on the baffle of the focused ion beam baffle mechanism and act on the workpiece loaded on the workpiece stage. Since the baffle is located between the workpiece stage and the focused ion source, it can block the back-sputtered particles generated when the focused ion beam acts on the workpiece, thereby preventing the back-sputtered particles from contaminating the focused ion source.

[0050] In addition, when the baffle is electrically connected to the current measurement module and the focused ion source emits a focused ion beam, the distance between the baffle and the focused ion source is adjusted by moving the baffle, and the focal length of the focused ion beam is obtained according to the measured current value on the baffle. The distance between the focused ion beam and the workpiece is adjusted according to the focal length position, so as to ensure that the focus of the focused ion beam can fall on the surface to be processed of the workpiece, improving the resolution and rate of the etching process. Brief Description of the Drawings

[0051] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to these drawings.

[0052] Figure 1 It is a schematic internal structure diagram of an etching device provided by an embodiment of the present invention;

[0053] Figure 2 It is a schematic internal structure diagram of an etching device provided by another embodiment of the present invention;

[0054] Figure 3 It is a schematic rotation structure diagram of the workpiece stage and the focused ion beam baffle mechanism provided by the present invention;

[0055] Figure 4 It is a three-dimensional structure diagram of the focused ion beam baffle mechanism provided by the present invention;

[0056] Figure 5 It is a schematic structure diagram of the hole provided by an embodiment of the present invention;

[0057] Figure 6 It is a schematic structure diagram of the hole provided by another embodiment of the present invention;

[0058] Figure 7 It is a schematic structure diagram of the hole provided by still another embodiment of the present invention;

[0059] Figure 8Schematic diagram of the initial state when measuring the focal length of the focused ion beam baffle mechanism provided by the first embodiment of the present invention;

[0060] Figure 9 Schematic diagram of the structure after the focused ion beam baffle mechanism provided by the first embodiment of the present invention moves for time t1 when measuring the focal length;

[0061] Figure 10 Schematic diagram of the structure after the focused ion beam baffle mechanism provided by the first embodiment of the present invention moves for time t2 when measuring the focal length;

[0062] Figure 11 I - t curve diagram generated during the process of measuring the focal length by the focused ion beam baffle mechanism provided by the first embodiment of the present invention;

[0063] Figure 12 Schematic diagram of the initial state of the opening - closing structure provided by the second embodiment of the present invention;

[0064] Figure 13 Schematic diagram of the structure of the opening - closing structure provided by the second embodiment of the present invention when the hole is reduced;

[0065] Figure 14 Schematic diagram of the baffle provided by the second embodiment of the present invention when the connecting bracket is in the extended state.

[0066] Among them, Figures 1 - 14 In:

[0067] Focused ion beam baffle mechanism 100, reaction chamber 200, workpiece stage 300, focused ion source 400, moving stage 500, support arm 600, master controller 700, neutralizer 800, workpiece 900, etching equipment 1000, connecting bracket 101, baffle 102, hole 102a, rotating shaft 102b, fixed ring 102 - 1, arc groove 102 - 1a, opening - closing structure 102 - 2, cover plate ring 102 - 3, blade 102 - 2 - 1, blade fixing pin 102 - 2 - 2, measuring device 103, beam blocker 104, rotation drive mechanism 105. Detailed implementation manners

[0068] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the attached Figures 1 - 14 drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0069] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by terms such as "upper" and "lower" is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated position or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0070] As shown in combination with Figures 1 - 14 , a first aspect of the present invention provides a focused ion beam baffle mechanism 100 for an etching apparatus 1000.

[0071] As Figure 1 and Figure 2 shown, the focused ion beam baffle mechanism 100 includes a connecting bracket 101 and a baffle 102. Specifically, the focused ion beam baffle mechanism 100 is installed in the reaction chamber 200. The reaction chamber 200 is a closed chamber structure, and the reaction chamber 200 is externally connected to a vacuum generator such as a vacuum pump, so that a high-vacuum environment can be maintained in the reaction chamber 200.

[0072] The connecting bracket 101 is installed in the reaction chamber 200 of the etching apparatus 1000. Specifically, the connecting bracket 101 can be connected to the chamber wall of the reaction chamber 200 or can be connected to the focused ion source 400 of the etching apparatus 1000.

[0073] The baffle 102 is installed on the connecting bracket 101 and is located between the workpiece stage 300 and the focused ion source 400 of the etching apparatus 1000, and a hole 102a allowing the focused ion beam emitted by the focused ion source 400 to pass through is formed in the baffle 102. The workpiece 900 is placed on the workpiece stage 300, and the baffle 102 is used to block the backsputtered particles generated when the focused ion beam acts on the workpiece 900.

[0074] The baffle 102 can be a circular plate, or can be a plate with a regular shape such as a triangular plate, a quadrilateral plate, a pentagonal plate or a hexagonal plate, or can also be a plate with an irregular shape such as a special-shaped plate. That is, the shape of the baffle 102 is not limited, and as long as it meets the shape allowing the focused ion beam to pass through, it belongs to the protection scope of the present invention.

[0075] The shape of the hole 102a is not limited. It can be in the style as Figure 5 shown. Along the thickness direction of the baffle 102, the shapes and sizes of the two sides of the hole 102a located on both sides of the baffle 102 are the same, that is, the hole 102a is an equal-diameter circular hole. Specifically, the hole 102a is an equal-diameter circular hole adapted to the focused ion beam at the end close to the focused ion source 400, so that the focused ion beam can pass through the hole 102a. Of course, the hole 102a can also be a hole of other shapes. For example, as Figure 6As shown, along the thickness direction of the baffle 102, the hole sizes of the holes 102a on both sides of the baffle 102 are inconsistent. The hole diameter on the side closer to the workpiece 900 is smaller. The taper angle of the hole 102a is the same as the focusing taper angle of the focused ion beam. That is, the hole 102a is a hole whose cross-section gradually decreases along the direction away from the focused ion source 400 and is adapted to the focused ion beam. This way of opening holes can expand the effective area of the baffle 102 on the side closer to the workpiece 900, and thus effectively block the back-sputtered particles. The hole 102a can also be as Figure 7 shown, keep the opening diameter of the baffle 102 on the side closer to the workpiece 900 unchanged, and expand the opening diameter on the side farther from the workpiece 900. That is, the hole 102a is a hole adapted to the focused ion beam at the end away from the focused ion source 400, and the cross-section of the end of the hole 102a facing away from the focused ion source 400 is larger than the cross-section of the end closer to the focused ion source 400. This way only needs to ensure the opening accuracy on the side closer to the workpiece 900, reducing the production and processing difficulty of the baffle 102.

[0076] Since the baffle 102 is located between the workpiece stage 300 and the focused ion source 400, it can block the back-sputtered particles generated by the focused ion beam acting on the workpiece 900, thereby preventing the back-sputtered particles from contaminating the focused ion source 400.

[0077] It should be noted that the baffle 102 is set as close as possible to the workpiece 900 on the workpiece stage 300, so as to effectively block the back-sputtered particles and cut off the back-sputtering path of the back-sputtered particles at the source. Specifically, the distance between the baffle 102 and the surface of the workpiece 900 to be machined can be set to 5 mm - 20 mm.

[0078] Since the distance between the baffle 102 and the workpiece stage 300 is very close, in order to avoid collision between the baffle 102 and the workpiece stage 300 when the workpiece stage 300 rotates, a specific embodiment of the present invention discloses that the baffle 102 is rotatably installed on the connecting bracket 101 through a rotation driving mechanism 105. Through the rotation driving mechanism 105, the baffle 102 can be made to rotate synchronously with the workpiece stage 300, thus avoiding collision. Specifically, the rotation driving mechanism 105 can be a driving motor. The driving motor is installed on the connecting bracket 101, and the driving motor is in transmission connection with the rotating shaft 102b on the baffle 102.

[0079] In some embodiments, the connecting bracket 101 can drive the baffle 102 to move along the first direction. The first direction is the length direction from the focused ion source 400 to the workpiece stage 300. By driving the baffle 102 to move through the connecting bracket 101, the distances between the baffle 102 and the focused ion source 400 and the workpiece 900 can be adjusted.

[0080] In some embodiments, such as Figure 1As shown, the connecting bracket 101 is mounted on the housing of the focused ion source 400, and the connecting bracket 101 is a retractable component, and the baffle 102 is mounted on the retractable end of the connecting bracket 101. Specifically, the connecting bracket 101 can be composed of a multi-stage telescopic structure, or a single telescopic structure, for example, the telescopic structure can include a servo motor, a telescopic housing, and a telescopic rod, wherein the telescopic rod is slidably mounted on the telescopic housing, the servo motor is mounted on the telescopic housing, and is in transmission connection with the telescopic rod, and is used to drive the telescopic rod to slide relative to the telescopic housing to achieve telescoping.

[0081] In this embodiment, the baffle 102 is connected to the housing of the focused ion source 400 through the connecting bracket 101, so that the focused ion source 400 drives the baffle 102 to move synchronously when moving along the first direction.

[0082] In some other embodiments, the connecting bracket 101 is slidably mounted on the inner wall of the reaction chamber 200 along the first direction. Figure 2 As shown, the inner wall of the reaction chamber 200 is provided with a slide rail laid along a first direction, and the connecting bracket 101 can be slidably installed on the slide rail.

[0083] In order to prevent the connecting bracket 101 from slipping off the slide rail, limiting protrusions or limiting blocks for limiting the connecting bracket 101 may be respectively provided at both ends of the slide rail.

[0084] In some embodiments, the focused ion beam baffle mechanism 100 further includes a measuring device 103 , which is used to measure the focal length of the focused ion beam emitted by the focused ion source 400 .

[0085] Specifically, the measuring device 103 is electrically connected to the baffle 102, which can sense current when bombarded by the focused ion beam, that is, the baffle 102 is a conductive material, such as graphite or carbon fiber, etc. The measuring device 103 obtains the focal length by detecting the current generated when the focused ion beam bombards the baffle 102.

[0086] In order to facilitate recording of the current value measured by the measuring device 103, a specific embodiment of the present invention discloses that the measuring device 103 is connected to the master controller 700 by signal, and the current value measured by the measuring device 103 is recorded in the master controller 700. It should be noted that the master controller 700 can be the master controller 700 in the etching device 1000, or it can be a controller separately provided by the focused ion beam baffle mechanism 100. In order to reduce the number of parts, in this embodiment, the master controller 700 is taken as the master controller 700 in the etching device 1000 as an example.

[0087] The measuring device 103 is connected to the baffle 102 through a wire. When the un-neutralized focused ion beam bombards the surface of the baffle 102, the measuring device 103 will sense the generation of current and record the measured current value in the master controller 700. It should be noted that even if the focused ion beam does not directly bombard the surface of the baffle 102, there will be a situation where some scattered particles deviating from the path of the focused ion beam bombard the baffle 102, causing the measuring device 103 to detect the generation of a weak current.

[0088] In some embodiments, the measuring device 103 includes a current measurement module. The current measurement module is electrically connected to the baffle 102 and is used to measure the current value on the baffle 102, and calculate and obtain the focal length according to the measured current value.

[0089] The internal structure of the current measurement module is an ammeter, and the ammeter is grounded. It can be understood that the internal structure of the current measurement module is not limited to an ammeter, and it can also be a structure combining a voltmeter and a resistor to measure the current value. Of course, it can also be other structures for measuring the current value, as long as it can realize the current measurement of the baffle 102, it belongs to the protection scope of the present invention.

[0090] Embodiment 1

[0091] In this embodiment, the structure of the baffle 102 is as Figure 4 shown. A hole 102a with a fixed size is opened in the center of the baffle 102. The opening diameter of the hole 102a is 5 mm - 25 mm, and the area of the baffle 102 is 12 cm 2 -300 cm 2 . In addition, the connecting bracket 101 is a multi-segment telescopic structure, which can drive the baffle 102 to move independently along the first direction. The telescopic length is 30 mm - 50 mm, and the maximum acceleration during the telescopic process is 15 m / s 2 . During the start and stop processes of the telescopic movement, it is required to perform at the maximum acceleration, so that the influence of the acceleration on the movement distance can be ignored when calculating the movement distance of the baffle 102, and the movement in the middle is uniform, and the movement speed is 10 mm / s - 20 mm / s.

[0092] It should be noted that the connecting bracket 101 can also slide along the slide rail to drive the movement of the baffle 102. The baffle 102 can be driven to move along the first direction through the slide rail, and the movable distance is 30 mm - 50 mm.

[0093] When measuring the focal length of the focused ion beam, first, as Figures 8 - 10As shown, the initial length of the preset connection bracket 101 (i.e., the initial distance between the baffle 102 and the outlet end of the focused ion source 400) is L0. Then, the baffle 102 is controlled to move in the direction close to the focus of the focused ion source 400. It should be noted that in this embodiment, the baffle 102 needs to move and pass through the focal position of the focused ion source 400. Observe Figure 11 the detected I-t curve, and record the moving time t1 of the baffle 102. It is found that at this time, the baffle 102 generates the minimum current value I1, indicating that when the moving time is t1, the baffle 102 reaches the focal position of the focused ion beam, that is, t1 is the time when the current measurement module obtains the minimum current value during the movement of the baffle 102. Combining the initial length L0, the moving speed v of the baffle 102 along the first direction, and the moving time t1, the focal length f of the focused ion beam can be calculated as f = L0 + v·t1.

[0094] To prevent the focused ion beam from damaging the cavity wall of the reaction chamber 200 and the workpiece 900, the focused ion beam baffle mechanism 100 further includes a beam blocker 104, and the beam blocker 104 is used to block the focused ion beam from bombarding the workpiece 900 on the workpiece stage 300 or the cavity wall of the reaction chamber 200.

[0095] Specifically, the beam blocker 104 is installed on the moving stage 500 of the etching equipment 1000, and the material is graphite. The workpiece stage 300 is also installed on the moving stage 500. The moving stage 500 can drive the beam blocker 104 and the workpiece stage 300 to move along the second direction or the third direction, so that the moving stage can drive the beam blocker 104 to move to or out of the position that can be bombarded by the focused ion beam. Among them, the first direction, the second direction, and the third direction are perpendicular to each other in pairs. In this embodiment, taking the first direction, the second direction, and the third direction being perpendicular to each other one by one as an example, as Figure 1 and Figure 2 shown, the first direction is the Z direction, the second direction is the X direction, the third direction is the Y direction. The beam blocker 104 is located above the workpiece stage 300 along the Y direction. At this time, the beam blocker 104 can be driven by the moving stage 500 to move downward along the Y direction to ensure that the focus of the focused ion beam bombards on the beam blocker 104, avoiding damage to the reaction chamber 200 and the workpiece 900. After the focal length measurement is completed, the position of the focused ion source 400 in the Z direction can be controlled to ensure that the focal position of the focused ion beam falls on the surface of the workpiece 900.

[0096] Embodiment 2

[0097] In this embodiment, the size of the hole 102a on the baffle 102 is variable. Specifically, as Figure 12 and Figure 13As shown, the baffle 102 includes a fixing ring 102-1 and an opening / closing structure 102-2. Among them, the fixing ring 102-1 is a circular ring structure. It should be noted that the fixing ring 102-1 is not limited to being a circular ring structure and can also be other ring structures. In this embodiment, the fixing ring 102-1 is taken as an example of a circular ring structure.

[0098] The fixing ring 102-1 is installed on the connecting bracket 101, and the opening / closing structure 102-2 is installed on the fixing ring 102-1 and is used to block a part of the inner ring hole of the fixing ring 102-1 to enclose a hole 102a. The size of the hole 102a is changed by changing the size of the inner ring hole of the fixing ring 102-1 blocked by the opening / closing structure 102-2.

[0099] The opening / closing structure 102-2 includes blades 102-2-1 and blade fixing pins 102-2-2. An arc-shaped groove 102-1a is formed on the fixing ring 102-1. The blade fixing pins 102-2-2 are installed on the blades 102-2-1 and are adjustably connected to the position of the arc-shaped groove 102-1a.

[0100] The number of blades 102-2-1, blade fixing pins 102-2-2 and arc-shaped grooves 102-1a are respectively equal and are respectively arranged in one-to-one correspondence. The blades 102-2-1 are circumferentially uniformly distributed on the fixing ring 102-1 around the center of the inner ring hole. A plurality of blades 102-2-1 extend into the inner ring hole and block a part of the inner ring hole to enclose a hole 102a. As Figure 12 and Figure 13 shown, the arc lengths and radii of a plurality of arc-shaped grooves 102-1a are equal. The centers corresponding to each arc-shaped groove 102-1a do not coincide with the center of the inner ring hole of the fixing ring 102-1, and the included angles formed by the connecting lines of the centers corresponding to any adjacent arc-shaped grooves 102-1a and the center of the inner ring hole of the fixing ring 102-1 are equal. Taking the outer diameter of the fixing ring 102-1 as 40 mm - 200 mm, the inner diameter as 10 mm - 50 mm, the minimum diameter of the hole 102a can be 0 mm, and the number of blades 102-2-1 as 12 pieces as an example, the materials of the blades 102-2-1 and the fixing ring 102-1 are graphite or carbon fiber. It should be noted that the above disclosed data is only a specific embodiment of the present invention. In actual applications, other data can also be set. For example, the number of blades 102-2-1 is not limited to 12 pieces and can also be less than or more than 12 pieces, etc.

[0101] The method for measuring the focal length in this embodiment is the same as the measuring method in Embodiment 1, that is, by changing the position of the baffle 102 in the first direction, it is measured as Figure 11The I-t curve shown is used to determine the focal position by recording the minimum value of the current. It should be noted that the opening and closing structure 102-2 cannot be completely closed during the measurement, and there needs to be a hole 102a of a certain size. The hole 102a can be maintained at 5-25 mm. After the focal length measurement is completed, the position of the focused ion source 400 in the first direction can be controlled to ensure that the focal position of the focused ion beam falls on the surface of the workpiece 900.

[0102] It should be noted that in this embodiment, the opening and closing structure 102-2 can also achieve the clipping of the focused ion beam by controlling the opening and closing degree. The size of the ion beam spot falling on the surface of the workpiece 900 can be effectively regulated through holes 102a of different sizes, thereby further improving the processing resolution.

[0103] For the convenience of the blade 102-2-1 moving along the arc-shaped groove 102-1a, a specific embodiment of the present invention discloses that the opening and closing structure 102-2 further includes a power member, and the power member is used for driving connection with the blade fixing pin 102-2-2 to drive the blade fixing pin 102-2-2 to slide in the arc-shaped groove 102-1a, so as to adjust the size of the inner ring hole blocked by the blade 102-2-1.

[0104] For the convenience of controlling the running speed of the blade 102-2-1, the opening and closing degree of the blade 102-2-1 can be controlled by the master controller 700.

[0105] As Figure 14 shown, in order to prevent back-sputtered particles from passing through the arc-shaped groove 102-1a to contaminate the focused ion source 400, the baffle 102 further includes a cover plate ring 102-3. The cover plate ring 102-3 is installed at one end of the fixed ring 102-1 facing the workpiece stage 300 and covers the arc-shaped groove 102-1a. The shape and size of the protective cover plate are the same as those of the fixed ring 102-1.

[0106] In this embodiment, it is required that the baffle 102 be placed at a position 5 mm - 20 mm away from the surface of the workpiece 900 to effectively block back-sputtered particles.

[0107] As Figures 1 - 2 shown, a second aspect of the present invention provides an etching device 1000, wherein the etching device 1000 includes a reaction chamber 200, a focused ion source 400, a workpiece stage 300, and a focused ion beam baffle mechanism 100 as described in any one of the above embodiments.

[0108] The focused ion source 400, the workpiece stage 300, and the focused ion beam baffle mechanism 100 are all installed in the reaction chamber 200, and the focused ion beam baffle mechanism 100 is located between the focused ion source 400 and the workpiece stage 300.

[0109] The focused ion source 400 can move a small distance in the first direction, and the movable distance is 10 mm - 50 mm. The focused ion source 400 can emit a focused ion beam. After the focused ion beam is neutralized by the electron beam emitted by the neutralizer 800 arranged in the reaction chamber 200, it bombards the surface of the workpiece 900, thereby realizing etching processing. It should be noted that when measuring the focal length of the focused ion beam, the neutralizer 800 needs to be turned off, so that the current measurement module can sense the generation of current.

[0110] Since the etching device 1000 provided by the present invention includes the focused ion beam baffle mechanism 100 in any of the above embodiments, the beneficial effects of the focused ion beam baffle mechanism 100 are all included in the etching device 1000 provided by the present invention.

[0111] In some embodiments, the etching device 1000 further includes a moving stage 500. The moving stage 500 is installed in the reaction chamber 200, and the workpiece stage 300 is installed on the moving stage 500. The moving stage 500 is used to drive the workpiece stage 300 to move along the second direction or the third direction. Among the second direction, the third direction and the first direction, any two are perpendicular to each other. Taking the first direction as the Z direction, the second direction as the X direction, and the third direction as the Y direction as an example, the moving stage 500 is used to drive the workpiece stage 300 to move along the X direction or the Y direction. Specifically, it can be set that the moving stage 500 includes a first moving stage and a second moving stage. Among them, the first moving stage is slidably installed in the reaction chamber 200 along the Y direction, and the second moving stage is slidably installed on the first moving stage along the X direction.

[0112] In some embodiments, the etching device 1000 further includes a support arm 600. The support arm 600 is installed on the moving stage 500, and the workpiece stage 300 is rotatably installed on the support arm 600. Specifically, the workpiece stage 300 is driven to rotate by a stage driving member. In order to avoid the exposure of the stage rotation driving member, the rotation driving member can be installed inside the support arm 600.

[0113] Specifically, the moving stage 500 can drive the workpiece stage 300 to move within a plane range of 70×70 cm 2 The workpiece stage 300 can also tilt back and forth around the X axis, and the tilt angle range is -65° to +96°. Here, it is defined that when facing the focused ion source 400 directly, it is 0°, the forward tilt rotation is a negative angle, and the backward tilt rotation is a positive angle.

[0114] In this specification, the various embodiments are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the various embodiments, reference can be made to each other.

[0115] The preferred embodiments of the present invention disclosed above are only used to help illustrate the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments only. Obviously, many modifications and variations can be made according to the content of this specification. These embodiments are selected and specifically described in this specification in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can well understand and utilize the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A focused ion beam baffle mechanism, characterized in that, For an etching device, comprising: A connecting bracket, which is installed in the reaction chamber of the etching device; A baffle installed on the connecting bracket, which is arranged between the workpiece stage and the focused ion source of the etching device, and a hole allowing the focused ion beam emitted by the focused ion source to pass through is provided on the baffle; A workpiece is placed on the workpiece stage, and the baffle is used to block the backsputtered particles generated when the focused ion beam acts on the workpiece.

2. The focused ion beam baffle mechanism according to claim 1, wherein The connecting bracket can drive the baffle to move along a first direction; The first direction is the length direction from the focused ion source to the workpiece stage.

3. The focused ion beam baffle mechanism according to claim 2, wherein, The connecting bracket is installed on the outer shell of the focused ion source, and the connecting bracket is a telescopic member, and the baffle is installed at the telescopic end of the connecting bracket; Alternatively, the connecting bracket is slidably installed on the inner wall of the reaction chamber along the first direction.

4. The focused ion beam baffle mechanism according to claim 2, characterized in that, The distance between the baffle and the surface of the workpiece to be machined is greater than or equal to 5 mm and less than or equal to 20 mm.

5. The focused ion beam baffle mechanism according to claim 2, wherein, It further includes a measuring device; The measuring device is used to measure the focal length of the focused ion beam emitted by the focused ion source.

6. The focused ion beam baffle mechanism according to claim 5, wherein The measuring device includes a current measuring module; The current measuring module is electrically connected to the baffle, and is used to measure the current value on the baffle, and calculate and obtain the focal length according to the measured current value.

7. The focused ion beam baffle mechanism according to claim 6, wherein The baffle includes a fixing ring and an opening and closing structure; The fixing ring is installed on the connecting bracket, and the opening and closing structure is installed on the fixing ring and is used to block a part of the inner ring hole of the fixing ring to enclose the hole.

8. The focused ion beam baffle mechanism according to claim 7, wherein, The opening and closing structure includes blades and blade fixing pins; An arc-shaped groove is provided on the fixing ring, the blade fixing pin is installed on the blade and is connected to the arc-shaped groove with adjustable position; The number of the blades, the blade fixing pins and the arc-shaped grooves are respectively equal, and are respectively arranged in one-to-one correspondence. The blades are circumferentially distributed on the fixing ring around the center of the inner ring hole, and multiple blades extend into the inner ring hole and block a part of the inner ring hole to enclose the hole.

9. The focused ion beam baffle mechanism according to claim 8, wherein, The opening and closing structure further includes a power member; The power member is used to be in transmission connection with the blade fixing pin to drive the blade fixing pin to slide in the arc-shaped groove, so as to adjust the size of the inner ring hole blocked by the blade.

10. The focused ion beam baffle mechanism according to claim 8, characterized in that, The baffle further includes a cover plate ring; The cover plate ring is installed at one end of the fixing ring facing the workpiece stage and covers the arc-shaped groove.

11. The focused ion beam baffle mechanism according to claim 1, characterized in that, It further includes a beam blocker; The beam blocker is used to block the focused ion beam from bombarding the workpiece on the workpiece stage or the chamber wall of the reaction chamber.

12. The focused ion beam baffle mechanism according to claim 11, wherein The beam blocker is installed on the moving stage for loading the workpiece stage, and the moving stage is used to drive the beam blocker to move to or move out of the position where the focused ion beam can bombard.

13. The focused ion beam baffle mechanism according to claim 1, wherein The hole is an equal-diameter round hole with one end close to the focused ion source adapted to the focused ion beam; Alternatively, the hole is a hole with a gradually decreasing cross-section along the direction away from the focused ion source and adapted to the focused ion beam. Alternatively, the hole is a hole whose end far from the focused ion source is adapted to the focused ion beam, and the cross-section of the end of the hole facing away from the focused ion source is larger than the cross-section of the end close to the focused ion source.

14. The focused ion beam baffle mechanism according to any one of claims 1-13, characterized in that, The baffle is rotatably mounted on the connecting bracket, and the rotation axis line of the baffle is arranged parallel to the rotation axis line of the workpiece stage.

15. An etching device, characterized in that, It includes a reaction chamber, a focused ion source, a workpiece stage, and a focused ion beam baffle mechanism according to any one of claims 1-14; The focused ion source, the workpiece stage, and the focused ion beam baffle mechanism are all mounted in the reaction chamber; The focused ion beam baffle mechanism is located between the focused ion source and the workpiece stage.

16. The etching apparatus according to claim 15, wherein It further includes a moving stage; The moving stage is mounted in the reaction chamber, the workpiece stage is mounted on the moving stage, and the moving stage is used to drive the workpiece stage to move along a second direction or a third direction; Among the second direction, the third direction, and the first direction, any two are perpendicular to each other.

17. The etching apparatus according to claim 16, wherein It further includes a support arm; The support arm is mounted on the moving stage, and the workpiece stage is rotatably mounted on the support arm.

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