Focused ion beam device

Abstract

Provided is a focused ion beam device capable of exhausting gas remaining in a nozzle. A focused ion beam device (100) for processing a sample (S) by irradiating the sample (S) with an ion beam comprises: a nozzle (42) for blowing a gas (2) for forming a deposition film to the sample (S) from an outlet (422); and a tank for supplying the gas (2) into the nozzle (42), the nozzle (42) having an exhaust hole (426) for exhausting the gas (2) in the nozzle (42).

Description

Technical Field

[0001] The present invention relates to a focused ion beam apparatus. Background Art

[0002] In a focused ion beam apparatus, a sample can be processed by scanning the surface of the sample with a focused ion beam. Further, in a focused ion beam apparatus, a deposition film can be formed on the surface of a sample by irradiating the sample with an electron beam or an ion beam while blowing a compound gas near the surface of the sample. In a cryogenic focused ion beam apparatus (Cryo-FIB) for processing a cooled sample, a deposition film can be formed on the surface of the sample only by blowing a compound gas onto the sample without irradiating an electron beam or an ion beam.

[0003] In Patent Document 1, a focused ion beam apparatus including a gas gun for blowing a compound gas onto a sample is disclosed. The gas gun includes a gas cylinder housing a gas source and a gas nozzle. When forming a deposition film, the gas nozzle approaches from a retracted position to a height of several hundred μm from the processing point of the sample by using a cylinder. A gas seal plug is provided in the gas cylinder, and the gas can be blown onto the sample by opening the gas seal plug.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2007-134520 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] In such a gas gun as described above, gas remains in the gas nozzle even when the gas cylinder is closed with the gas seal plug.

[0009] Solutions for Solving the Problems

[0010] One aspect of the focused ion beam apparatus of the present invention is a focused ion beam apparatus that irradiates a sample with an ion beam to process the sample, including:

[0011] a nozzle that blows a gas for forming a deposition film onto the sample from a blowout port; and

[0012] a cylinder that supplies gas into the nozzle,

[0013] wherein the nozzle has an exhaust hole for exhausting the gas in the nozzle.

[0014] Advantages of the Invention

[0015] In such a focused ion beam device, since the nozzle has an exhaust hole, it is possible to exhaust the gas remaining in the nozzle. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 FIG. is an example showing the configuration of a focused ion beam device according to the first embodiment.

[0017] Figure 2 FIG. is a schematic cross-sectional view showing a gas injection device.

[0018] Figure 3 FIG. is a diagram for explaining the operation of the focused ion beam device according to the first embodiment.

[0019] Figure 4 FIG. is a diagram for explaining the operation of the focused ion beam device according to the first embodiment.

[0020] Figure 5 FIG. is a schematic cross-sectional view showing a modified example of the focused ion beam device according to the first embodiment.

[0021] Figure 6 FIG. is a schematic cross-sectional view showing a modified example of the focused ion beam device according to the first embodiment.

[0022] Figure 7 FIG. is an example showing the configuration of a focused ion beam device according to the second embodiment.

[0023] Figure 8 FIG. is a schematic cross-sectional view showing a gas injection device.

[0024] Figure 9 FIG. is a diagram for explaining the operation of the focused ion beam device according to the second embodiment.

[0025] Figure 10 FIG. is a diagram for explaining the operation of the focused ion beam device according to the second embodiment.

[0026] Figure 11 FIG. is an example showing the configuration of a focused ion beam device according to the third embodiment.

[0027] Figure 12 FIG. is an example showing the configuration of a focused ion beam device according to the fourth embodiment.

[0028] Figure 13 FIG. is a diagram for explaining the operation of the focused ion beam device according to the fourth embodiment.

[0029] Figure 14 FIG. is a diagram for explaining the operation of the focused ion beam device according to the fourth embodiment.

[0030] Figure 15This is a diagram showing an example of the configuration of a focused ion beam apparatus according to the fifth embodiment.

[0031] Figure 16 This is a diagram for explaining the operation of the focused ion beam apparatus according to the fifth embodiment.

[0032] Figure 17 This is a diagram for explaining the operation of the focused ion beam apparatus according to the fifth embodiment.

[0033] Explanation of Reference Numerals

[0034] 6... Gap, 6a... Sealed chamber, 6b... Exhaust chamber, 6c... Space, 10... SEM column, 20... FIB column, 30... Specimen stage, 32... Cooling mechanism, 40... Gas injection device, 42... Nozzle, 44... Storage tank, 45... Valve, 46... Accommodating tube, 47... Flange, 48... Moving mechanism, 100... Focused ion beam apparatus, 102... Specimen chamber, 103... First exhaust system, 104... Housing, 106... O-ring, 200... Focused ion beam apparatus, 202... Second exhaust system, 300... Focused ion beam apparatus, 310... Cold trap, 312... Cooling fins, 314... Tank, 400... Focused ion beam apparatus, 402... O-ring, 404... O-ring, 422... Blowing outlet, 424... Supply port, 426... Exhaust hole, 460... Through hole, 462... Exhaust pipe, 464... Valve, 500... Focused ion beam apparatus. Detailed Embodiments

[0035] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Moreover, the embodiments described below do not unduly limit the content of the present invention described in the claims. In addition, not all of the configurations described below are essential elements of the present invention.

[0036] 1. First Embodiment

[0037] 1.1. Focused Ion Beam Apparatus

[0038] First, the focused ion beam apparatus according to the first embodiment will be described with reference to the drawings. Figure 1 This is a diagram showing an example of the configuration of the focused ion beam apparatus 100 according to the first embodiment.

[0039] As Figure 1As shown, the focused ion beam apparatus 100 includes an SEM (scanning electron microscope) column 10, an FIB (focused ion beam) column 20, a specimen stage 30, a cooling mechanism 32, and a gas injection device 40. The focused ion beam apparatus 100 is equipped with the SEM column 10 and the FIB column 20, and can perform processing and observation of the specimen S.

[0040] The SEM column 10 irradiates the specimen S with an electron beam. The SEM column 10 forms an electron probe and scans the electron probe. The SEM column 10 includes: an electron gun that releases an electron beam; and an electron optical system that focuses the electron beam to form an electron probe and scans the formed electron probe. The electron beam released from the electron gun travels along the optical axis AS of the SEM column 10 and irradiates the specimen S. In the focused ion beam apparatus 100, by scanning the specimen S with the electron probe and detecting the electrons released from the specimen S with an electron detector (not shown), an SEM image can be obtained.

[0041] The FIB column 20 irradiates the specimen S with an ion beam. The FIB column 20 forms an ion beam and scans the ion beam. The FIB column 20 includes: an ion gun that releases an ion beam; and an ion optical system that focuses the ion beam and scans the focused ion beam. The ion beam released from the ion gun travels along the optical axis AF of the FIB column 20 and irradiates the specimen S. In the focused ion beam apparatus 100, the specimen S can be processed by scanning the specimen S with the focused ion beam.

[0042] The specimen stage 30 supports the specimen S. The specimen S supported on the specimen stage 30 is disposed in the specimen chamber 102. The specimen chamber 102 is evacuated by an exhaust system 103 and maintained in a vacuum state (reduced pressure state). The exhaust system 103, although not shown, includes a vacuum exhaust device, an exhaust pipe connecting the specimen chamber 102 to the vacuum exhaust device, and a valve.

[0043] In the focused ion beam apparatus 100, processing and observation of the specimen S are performed at the intersection point P0 of the optical axis AS and the optical axis AF. The specimen stage 30 includes a moving mechanism for moving the specimen S in the horizontal and vertical directions and an inclination mechanism for inclining the specimen S. The specimen stage 30 may also be configured to support a specimen holder that can be shared by the focused ion beam apparatus 100 and a transmission electron microscope.

[0044] The cooling mechanism 32 cools the specimen stage 30. Through the specimen stage 30, the specimen S can be cooled. The cooling mechanism 32 includes, for example, a tube through which a gas flows and a refrigerant tank that cools the gas. The cooling mechanism 32 cools the specimen stage 30, for example, by causing the gas cooled in the refrigerant tank filled with liquid nitrogen to flow through the tube thermally connected to the specimen stage 30. Additionally, for example, the cooling mechanism 32 may also include a refrigerant tank and a heat transfer wire that thermally connects the refrigerant tank to the specimen stage 30. By connecting the refrigerant tank to the specimen stage 30 with the heat transfer wire, the specimen stage 30 can be cooled.

[0045] In this way, the focused ion beam apparatus 100 is equipped with the cooling mechanism 32 for cooling the specimen stage 30 and can be used as a cryogenic FIB (Cryo-FIB) that can process the specimen S while cooling it. Therefore, in the focused ion beam apparatus 100, it is possible to process and observe frozen biological specimens, battery materials, etc.

[0046] The gas injection device 40 blows the gas for forming the deposition film onto the specimen S. When forming a deposition film on the specimen S at normal temperature, while blowing the gas onto the specimen S with the gas injection device 40, the specimen S is irradiated with an electron beam or an ion beam. The secondary electrons generated in the specimen S by the irradiation of the electron beam or the ion beam decompose the gas into deposition materials and gas components. Thereby, the deposition materials adhere to the specimen S, and a deposition film can be formed on the specimen S. Additionally, when forming a deposition film on the cooled specimen S, instead of irradiating the electron beam or the ion beam, the gas is blown onto the specimen S. The gas adheres to the surface of the cooled specimen S. Thereby, a deposition film can be formed.

[0047] 1.2. Gas Injection Device

[0048] Figure 2 is a cross-sectional view schematically showing the gas injection device 40. As Figure 2 shown, the gas injection device 40 includes a nozzle 42, a storage tank 44, a valve 45, a receiving tube 46, and a moving mechanism 48. In Figure 2 it, the state where the gas 2 is being blown from the nozzle 42 onto the specimen S is illustrated.

[0049] In the storage tank 44, a gas source 4 in a liquid or solid state is accommodated. As the gas source 4, for example, a carbon compound, a tungsten compound, or a platinum compound, etc. is used. The gas 2 generated from the gas source 4 is supplied from the storage tank 44 to the inside of the nozzle 42 through the valve 45. The gas 2 is the gas for forming the deposition film.

[0050] A valve 45 is provided between the nozzle 42 and the storage tank 44. By opening the valve 45, the gas 2 can be supplied into the nozzle 42 from the supply port 424 of the nozzle 42. Thereby, the gas 2 is blown out from the blowout port 422 of the nozzle 42. In addition, by closing the valve 45, the supply of the gas 2 into the nozzle 42 can be stopped. The valve 45 is opened and closed by the power of a cylinder, for example. In addition, the configuration of the valve 45 is not particularly limited.

[0051] The nozzle 42 is a cylindrical member for blowing the gas 2 from the blowout port 422 to the specimen S. In the focused ion beam apparatus 100, by using the elongated nozzle 42, the storage tank 44 can be arranged at a position away from the specimen S. For example, in Figure 2 the example shown, the storage tank 44 is arranged outside the specimen chamber 102. Thereby, the gas source 4 can be easily replenished to the storage tank 44.

[0052] The nozzle 42 is connected to the storage tank 44 via the valve 45. A supply port 424 is provided at the rear end of the nozzle 42, and the gas 2 is supplied from the storage tank 44 into the nozzle 42 via the supply port 424. The supply port 424 is opened and closed by the valve 45.

[0053] A blowout port 422 is provided at the tip of the nozzle 42. The gas 2 supplied from the supply port 424 provided at the rear end of the nozzle 42 passes through the inside of the nozzle 42 and is blown out from the blowout port 422 provided at the tip of the nozzle 42.

[0054] An exhaust hole 426 for exhausting the gas 2 inside the nozzle 42 is provided in the nozzle 42. The exhaust hole 426 is provided between the blowout port 422 and the supply port 424. The exhaust hole 426 penetrates the side wall of the nozzle 42. In the illustrated example, two exhaust holes 426 are provided, but the number of the exhaust holes 426 is not particularly limited. The diameter of the exhaust hole 426 is larger than the diameter of the blowout port 422.

[0055] The exhaust hole 426 is communicated with the gap 6 between the nozzle 42 and the receiving tube 46. In Figure 2 the state where the illustrated nozzle 42 is arranged at the film formation position, the exhaust hole 426 is communicated with the sealed chamber 6a formed by the O-ring 402 and the O-ring 404. The sealed chamber 6a is the space between the O-ring 402 and the O-ring 404. The O-ring 402 and the O-ring 404 respectively seal the space between the nozzle 42 and the receiving tube 46 airtightly.

[0056] The receiving tube 46 houses the nozzle 42. The receiving tube 46 is a cylindrical member having a diameter larger than the diameter of the nozzle 42. The nozzle 42 can move inside the receiving tube 46.

[0057] On the inner wall of the accommodation tube 46, two grooves for O-rings are formed. An O-ring 402 is installed in one groove, and an O-ring 404 is installed in the other groove. The O-ring 402 is located at a position closer to the tip of the nozzle 42 than the O-ring 404. The nozzle 42 can slide within the accommodation tube 46 via the O-ring 402 and the O-ring 404.

[0058] The gap 6 between the nozzle 42 and the accommodation tube 46 is divided into an airtight chamber 6a and an exhaust chamber 6b by the O-ring 402 and the O-ring 404. The airtight chamber 6a is the space between the O-ring 402 and the O-ring 404. The exhaust chamber 6b constitutes an exhaust path for exhausting the gas 2 within the nozzle 42. The exhaust chamber 6b is in communication with a through-hole 460 that penetrates the side wall of the accommodation tube 46. The exhaust chamber 6b is the gap 6 on the rear end side of the nozzle 42 relative to the O-ring 404.

[0059] A through-hole 460 is provided in the accommodation tube 46. In the illustrated example, two through-holes 460 are provided, but the number of through-holes 460 is not particularly limited. The diameter of the through-hole 460 is larger than the diameter of the blow-out port 422. Additionally, the diameter of the through-hole 460 is larger than the diameter of the exhaust hole 426. One opening of the through-hole 460 is connected to the exhaust chamber 6b, and the other opening of the through-hole 460 is connected to the specimen chamber 102.

[0060] The accommodation tube 46 is connected to a flange 47. The flange 47 is installed in a hole provided in the housing 104 that constitutes the specimen chamber 102. Between the flange 47 and the housing 104, it is hermetically sealed by an O-ring 106.

[0061] The moving mechanism 48 supports the nozzle 42 and enables the nozzle 42 to move between a film-forming position and a retracted position. The film-forming position is near the specimen S and is a position where the gas 2 can be blown from the blow-out port 422 to the specimen S. The retracted position is a position different from the film-forming position and is a position far from the specimen S. The distance between the retracted position and the specimen S is larger than the distance between the film-forming position and the specimen S.

[0062] The moving mechanism 48 moves the nozzle 42. The moving mechanism 48, for example, linearly moves the nozzle 42 along the central axis of the nozzle 42 by means of a cylinder. Additionally, the configuration of the moving mechanism 48 is not particularly limited as long as it can move the nozzle 42 between the film-forming position and the retracted position. The moving mechanism 48 is, for example, a single-axis actuator and includes a driving device such as a cylinder or a motor and a power transmission mechanism such as a linear guide. Additionally, the moving mechanism 48 can also be a mechanism for manually moving the nozzle 42.

[0063] 1.3. Operations

[0064] Figure 3 and Figure 4 are diagrams for explaining the operations of the focused ion beam device 100.Figure 3 The figure shows the state where the nozzle 42 is in the film forming position. Figure 4 The figure shows the state where the nozzle 42 is in the retracted position.

[0065] In the focused ion beam apparatus 100, the nozzle 42 can be moved between the film forming position and the retracted position by the moving mechanism 48. When forming a deposited film on the specimen S, the nozzle 42 is arranged at the film forming position. Thereby, the blowout port 422 of the nozzle 42 can be arranged near the specimen S. By opening the valve 45 at the film forming position, the gas 2 is blown out from the blowout port 422, and a deposited film can be formed on the specimen S. In addition, by closing the valve 45, film formation can be stopped. After closing the valve 45, the nozzle 42 is arranged at the retracted position. Thereby, the nozzle 42 can be arranged at a position away from the specimen S, and the space near the specimen S can be effectively utilized.

[0066] Since the housing tube 46 is fixed, the distance between the through hole 460 provided in the housing tube 46 and the exhaust hole 426 provided in the nozzle 42 changes by moving the nozzle 42. Specifically, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is arranged at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is arranged at the film forming position.

[0067] As Figure 3 shown, when the nozzle 42 is arranged at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a. Therefore, the exhaust path is closed. Thus, when the nozzle 42 is arranged at the film forming position, the amount of the gas 2 discharged from the exhaust hole 426 is extremely small, and most of the gas 2 supplied from the supply port 424 is blown out from the blowout port 422. Thereby, the gas 2 can be blown to the specimen S, and a deposited film can be formed on the specimen S.

[0068] As Figure 4 shown, when the nozzle 42 is arranged at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b. Therefore, the exhaust hole 426, the exhaust chamber 6b, and the through hole 460 constitute an exhaust path. Thus, by moving the nozzle 42 to the retracted position, the exhaust path is opened, and the gas 2 remaining in the nozzle 42 can be discharged to the specimen chamber 102 via the exhaust path.

[0069] When the nozzle 42 is arranged at the retracted position, the exhaust hole 426 overlaps with the through hole 460 when viewed from the direction along the central axis of the exhaust hole 426. Therefore, the gas 2 discharged from the exhaust hole 426 can be efficiently exhausted to the specimen chamber 102 via the through hole 460.

[0070] Here, the diameter of the exhaust hole 426 is larger than the diameter of the blowout port 422. Additionally, the diameter of the through hole 460 is larger than the diameter of the blowout port 422. Further, a plurality of exhaust holes 426 and through holes 460 are provided respectively. In this way, by increasing the diameters of the exhaust hole 426 and the through hole 460 and providing a plurality of exhaust holes 426 and through holes 460, the conductance of the exhaust path can be increased. In addition, conductance is an index of the ease of flow of gas, and under the same pressure difference, the greater the conductance, the greater the gas flow rate.

[0071] In the focused ion beam apparatus 100, when the nozzle 42 is disposed at the retracted position, the conductance of the exhaust path is larger than the conductance of the tip portion of the nozzle 42 from the exhaust hole 426 to the blowout port 422. Therefore, when the nozzle 42 is disposed at the retracted position, the amount of gas 2 discharged from the exhaust path can be made larger than the amount of gas 2 discharged from the blowout port 422.

[0072] The through hole 460 does not face the direction of the specimen S. That is, the central axis of the through hole 460 does not intersect the specimen S. Here, the degree of vacuum in the specimen chamber 102 is in the molecular flow region of about 10 -5 Pa to 10 -6 Pa. In the molecular flow region, gas molecules fly almost straight. Therefore, the number of gas molecules discharged from the through hole 46 and going to the specimen S in the specimen chamber 102 can be made extremely small. As a result, the possibility of the gas 2 discharged from the through hole 460 adhering to the specimen S can be reduced.

[0073] 1.4. Effects

[0074] The focused ion beam apparatus 100 includes: a nozzle 42 that blows the gas 2 for forming a deposition film from the blowout port 422 to the specimen S; and a storage tank 44 that supplies the gas 2 to the nozzle 42. In addition, the nozzle 42 has an exhaust hole 426 for exhausting the gas 2 in the nozzle 42. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be exhausted.

[0075] Since the nozzle 42 is slender, even if the valve 45 is closed, gas 2 remains in the nozzle 42. If the remaining gas 2 leaks from the nozzle 42 and reaches the surface of the specimen S, a deposition film may inadvertently be formed on the surface of the specimen S. In particular, in low-temperature FIB, a deposition film is formed without irradiating an electron beam or an ion beam. Therefore, sometimes a deposition film thick enough to affect the observation and analysis by an electron microscope is formed on the surface of the specimen S due to the gas 2 leaking from the nozzle 42. In addition, even for a specimen S at normal temperature, depending on the type of the gas 2, a thick deposition film may sometimes be formed on the surface of the specimen S.

[0076] In the focused ion beam apparatus 100, since the gas 2 remaining in the nozzle 42 can be exhausted, it is possible to prevent the formation of a deposition film on the surface of the specimen S that is thick enough to affect observation and analysis by an electron microscope.

[0077] In addition, if the gas 2 remains in the nozzle 42, when forming a deposition film on the surface of the specimen S, the components of the gas 2 remaining in the nozzle 42 will be blown onto the specimen S, and the high-purity gas 2 cannot be blown onto the specimen S. In the focused ion beam apparatus 100, since the gas 2 remaining in the nozzle 42 can be exhausted, the inside of the nozzle 42 can be kept clean. Therefore, when forming a film, the high-purity gas 2 can be blown onto the specimen S.

[0078] The focused ion beam apparatus 100 includes a moving mechanism 48 that can move the nozzle 42 between a film-forming position where the gas 2 can be blown from the blowout port 422 onto the specimen S and a retracted position different from the film-forming position. Therefore, in the focused ion beam apparatus 100, when forming a film, the gas 2 can be efficiently blown onto the specimen S, and when retracting, the nozzle 42 can be arranged at a position away from the specimen S, and the space near the specimen S can be efficiently utilized.

[0079] In the focused ion beam apparatus 100, the exhaust hole 426 constitutes an exhaust path for exhausting the gas 2 inside the nozzle 42. When the nozzle 42 is arranged at the film-forming position, the exhaust path is closed, and when the nozzle 42 is arranged at the retracted position, the exhaust path is opened. Therefore, in the focused ion beam apparatus 100, the gas 2 is blown out from the blowout port 422 when forming a film, and the gas 2 remaining in the nozzle 42 can be exhausted from the exhaust hole 426 when retracting.

[0080] In the focused ion beam apparatus 100, when the nozzle 42 is arranged at the film-forming position, the exhaust hole 426 communicates with the sealed closed chamber 6a, and when the nozzle 42 is arranged at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b that constitutes an exhaust path for exhausting the gas 2 inside the nozzle 42. Therefore, in the focused ion beam apparatus 100, by moving the nozzle 42 from the film-forming position to the retracted position, the gas 2 remaining in the nozzle 42 can be exhausted. In this way, in the focused ion beam apparatus 100, since the gas 2 remaining in the nozzle 42 can be automatically exhausted by arranging the nozzle 42 at the retracted position, an operation for exhausting the gas 2 remaining in the nozzle 42 is not required.

[0081] In the focused ion beam apparatus 100, the exhaust path communicates with the specimen chamber 102 in which the specimen S is disposed. Therefore, in the focused ion beam apparatus 100, there is no need to prepare a new exhaust system for forming the exhaust path. Thus, the gas 2 remaining in the nozzle 42 can be exhausted with a simple configuration.

[0082] In the focused ion beam apparatus 100, the receiving tube 46 that houses the nozzle 42 is included, and the gap 6 between the receiving tube 46 and the nozzle 42 forms an exhaust path for exhausting the gas 2 inside the nozzle 42. Therefore, in the focused ion beam apparatus 100, an exhaust path can be formed with a simple configuration.

[0083] In the focused ion beam apparatus 100, a through hole 460 communicating with the gap 6 is provided in the receiving tube 46. In addition, the distance between the exhaust hole 426 when the nozzle 42 is disposed at the retracted position and the through hole 460 is smaller than the distance between the exhaust hole 426 when the nozzle 42 is disposed at the film formation position and the through hole 460. Therefore, in the focused ion beam apparatus 100, the gas 2 discharged from the exhaust hole 426 can be efficiently discharged from the through hole 460.

[0084] In the focused ion beam apparatus 100, the through hole 460 does not face the direction of the specimen S. Therefore, in the focused ion beam apparatus 100, the possibility of the gas 2 discharged from the through hole 460 reaching the specimen S in the specimen chamber 102 can be reduced.

[0085] In the focused ion beam apparatus 100, a moving mechanism 48 is included as a control mechanism for changing the conductance of the exhaust path for exhausting the gas 2 inside the nozzle 42. By moving the nozzle 42 using the moving mechanism 48, the exhaust hole 426 can be made to communicate with the sealed chamber 6a or the exhaust hole 426 can be made to communicate with the exhaust chamber 6b. In this way, the moving mechanism 48 functions as a control mechanism for changing the conductance of the exhaust path. Therefore, in the focused ion beam apparatus 100, the amount of the gas 2 blown out from the blowout port 422 and the amount of the gas 2 discharged from the exhaust hole 426 can be controlled.

[0086] In the focused ion beam apparatus 100, the blowout port 422 is provided at the tip of the nozzle 42. Therefore, in the focused ion beam apparatus 100, the blowout port 422 can be brought close to the specimen S. In addition, in the focused ion beam apparatus 100, the exhaust hole 426 penetrates the side wall of the nozzle 42. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be efficiently exhausted.

[0087] In the focused ion beam apparatus 100, the diameter of the exhaust hole 426 is larger than the diameter of the blowout port 422. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be efficiently discharged from the exhaust hole 426.

[0088] 1.5. Modified Example

[0089] Figure 5 And Figure 6 FIGS. are cross-sectional views schematically showing modified examples of the focused ion beam apparatus 100. In addition, Figure 5 The figure shows a state in which the nozzle 42 is disposed at the film formation position, Figure 6 The figure shows a state in which the nozzle 42 is disposed at the retracted position.

[0090] In the above-described first embodiment, the O-ring 402 and the O-ring 404 are respectively installed in the grooves for O-rings provided on the inner wall of the housing tube 46. In contrast, in the present modified example, as Figure 5 And Figure 6 Shown, the O-ring 402 and the O-ring 404 are respectively installed in the grooves formed on the outer peripheral surface of the nozzle 42.

[0091] The O-ring 402 and the O-ring 404 move along with the movement of the nozzle 42. Therefore, the space 6c between the O-ring 402 and the O-ring 404 moves along with the movement of the nozzle 42. An exhaust hole 426 is provided between the O-ring 402 and the O-ring 404. The exhaust hole 426 communicates with the space 6c.

[0092] As Figure 5 Shown, when the nozzle 42 is disposed at the film formation position, the space 6c between the O-ring 402 and the O-ring 404 does not communicate with the through hole 460, and the exhaust path is closed. Therefore, most of the gas 2 supplied from the supply port 424 is blown out from the blowout port 422.

[0093] In contrast, as Figure 6 Shown, when the nozzle 42 is disposed at the retracted position, the space 6c communicates with the through hole 460, and the exhaust path is opened. Therefore, the gas 2 remaining in the nozzle 42 can be discharged to the specimen chamber 102 via the exhaust path.

[0094] Thus, in the focused ion beam apparatus of the present modified example, as in the focused ion beam apparatus 100, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be discharged to the specimen chamber 102 via the exhaust hole 426 and the through hole 460.

[0095] 2. Second Embodiment

[0096] 2.1. Focused Ion Beam Apparatus

[0097] Next, a focused ion beam apparatus according to a second embodiment will be described with reference to the accompanying drawings. Figure 7 FIG. is an example showing the configuration of a focused ion beam apparatus 200 according to the second embodiment.

[0098] Figure 8 FIG. is a cross-sectional view schematically showing a gas injection device 40 of the focused ion beam apparatus 200.

[0099] Hereinafter, in the focused ion beam apparatus 200 according to the second embodiment, components having the same functions as those of the components of the focused ion beam apparatus 100 according to the first embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0100] In Figure 1 the shown focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 is exhausted to the sample chamber 102 via the exhaust path.

[0101] In contrast, Figure 7 the shown focused ion beam apparatus 200 includes an exhaust system 103 (hereinafter, also referred to as the "first exhaust system") for exhausting the sample chamber 102, and a second exhaust system 202 for exhausting the inside of the nozzle 42. The second exhaust system 202 is an exhaust system independent of the first exhaust system 103. The second exhaust system 202 is not in communication with the sample chamber 102. Thus, in the focused ion beam apparatus 200, a dedicated exhaust system for exhausting the gas 2 remaining in the nozzle 42 is provided.

[0102] As Figure 8 shown, a discharge pipe 462 communicating with a gap 6 between the nozzle 42 and the receiving pipe 46 is connected to the receiving pipe 46. The discharge pipe 462 constitutes the second exhaust system 202. In the second exhaust system 202, although not shown, it includes a vacuum exhaust device, the discharge pipe 462, and a valve. In addition, the vacuum exhaust device of the first exhaust system 103 and the vacuum exhaust device of the second exhaust system 202 may be common.

[0103] 2.2. Operation

[0104] Figure 9 And Figure 10 FIGS. are diagrams for explaining the operation of the focused ion beam apparatus 200. Figure 9 FIG. shows a state where the nozzle 42 is at the film formation position. Figure 10 FIG. shows a state where the nozzle 42 is at the retracted position.

[0105] As Figure 9As shown, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a, so the exhaust path is closed. Therefore, when the nozzle 42 is disposed at the film forming position, most of the gas 2 supplied from the supply port 424 is blown out from the blowout port 422.

[0106] As Figure 10 shown, when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b. Therefore, the exhaust hole 426, the exhaust chamber 6b, and the exhaust pipe 462 constitute an exhaust path. Thus, by moving the nozzle 42 to the retracted position, the exhaust path is opened, and the gas 2 remaining in the nozzle 42 can be discharged from the second exhaust system 202 via the exhaust path.

[0107] 2.3. Effects

[0108] In the focused ion beam apparatus 200, similar to the above-described focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be exhausted. Moreover, the focused ion beam apparatus 200 includes a first exhaust system 103 for exhausting the sample chamber 102 and a second exhaust system 202 for exhausting the inside of the nozzle 42. Therefore, in the focused ion beam apparatus 200, the gas 2 remaining in the nozzle 42 can be discharged outside the sample chamber 102. Thus, in the focused ion beam apparatus 200, formation of a thick deposition film on the sample S can be prevented.

[0109] 3. Third Embodiment

[0110] 3.1. Focused Ion Beam Apparatus

[0111] Next, a focused ion beam apparatus according to a third embodiment will be described with reference to the drawings. Figure 11 FIG. is an example showing the configuration of a focused ion beam apparatus 300 according to the third embodiment. Hereinafter, in the focused ion beam apparatus 300 according to the third embodiment, components having the same functions as those of the components of the focused ion beam apparatus 100 according to the first embodiment and the focused ion beam apparatus 200 according to the second embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0112] In the above-described Figures 7 - 10 shown focused ion beam apparatus 200, the gas 2 remaining in the nozzle 42 was exhausted using the second exhaust system 202. In contrast, in the focused ion beam apparatus 300, as Figure 11 shown, a cold trap 310 is used to exhaust the gas 2 remaining in the nozzle 42.

[0113] The cold trap 310 includes cooling fins 312 and a can 314 filled with a refrigerant for cooling the cooling fins 312. The cold trap 310 is a device that cools the cooling fins 312 to condense gas molecules. The cooling fins 312 are disposed in the exhaust chamber 6b. In the can 314, for example, liquid nitrogen or liquid helium is accommodated as the refrigerant.

[0114] In the focused ion beam apparatus 300, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be condensed onto the cold trap 310 via the exhaust hole 426 and the exhaust chamber 6b. Thereby, the gas 2 remaining in the nozzle 42 can be exhausted.

[0115] 3.2. Operation

[0116] The operation of the focused ion beam apparatus 300 is the same as that of the above-described focused ion beam apparatus 200 except that the cold trap 310 is used to exhaust the gas 2 remaining in the nozzle 42 when the nozzle 42 is disposed at the retracted position, and thus the description thereof is omitted.

[0117] 3.3. Effect

[0118] In the focused ion beam apparatus 300, similar to the above-described focused ion beam apparatus 200, the gas 2 remaining in the nozzle 42 is not exhausted into the specimen chamber 102.

[0119] 4. Fourth Embodiment

[0120] 4.1. Focused Ion Beam Apparatus

[0121] Next, a focused ion beam apparatus according to a fourth embodiment will be described with reference to the drawings. Figure 12 FIG. is an example showing the configuration of a focused ion beam apparatus 400 according to the fourth embodiment. Hereinafter, in the focused ion beam apparatus 400 according to the fourth embodiment, components having the same functions as those of the components of the focused ion beam apparatus 100 according to the first embodiment are denoted by the same reference numerals, and the detailed description thereof is omitted.

[0122] In Figures 1 - 4 In the shown focused ion beam apparatus 100, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a to close the exhaust path, and when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b to open the exhaust path.

[0123] In contrast, in the focused ion beam apparatus 400, by moving the nozzle 42, the distance of the gap 6 connecting the exhaust hole 426 and the through hole 460 is changed, and the conductance of the exhaust path is changed. Specifically, when the nozzle 42 is disposed at the film formation position, the distance between the exhaust hole 426 and the through hole 460 is large, and the conductance of the exhaust path is smaller than the conductance of the tip portion of the nozzle 42. In addition, when the nozzle 42 is disposed at the retracted position, the distance between the exhaust hole 426 and the through hole 460 is small, and the conductance of the exhaust path is larger than the conductance of the tip portion of the nozzle 42.

[0124] The focused ion beam apparatus 400 does not have an O-ring 404, and a sealed chamber 6a is not formed in the gap 6 between the nozzle 42 and the receiving tube 46. In addition, in the focused ion beam apparatus 400, the gap 6 is narrow, and the gas 2 does not easily flow. That is, the exhaust conductance of the gap 6 is small.

[0125] 4.2. Operation

[0126] Figure 13 and Figure 14 are diagrams for explaining the operation of the focused ion beam apparatus 400. Figure 13 The figure shows a state where the nozzle 42 is located at the film formation position. Figure 14 The figure shows a state where the nozzle 42 is located at the retracted position.

[0127] As Figure 13 shown, when the nozzle 42 is disposed at the film formation position, the exhaust hole 426 communicates with the gap 6. At this time, the exhaust path is composed of the exhaust hole 426, the gap 6, and the through hole 460. Here, when the nozzle 42 is disposed at the film formation position, the distance between the exhaust hole 426 and the through hole 460 is large, and the length of the gap 6 that connects the exhaust hole 426 and the through hole 460 and forms the exhaust path of the gas 2 is long. Therefore, the conductance of the tip portion of the nozzle 42 is larger than the conductance of the exhaust path. Accordingly, when the nozzle 42 is disposed at the film formation position, most of the gas 2 supplied from the supply port 424 is blown out from the blowout port 422.

[0128] As Figure 14As shown, when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the gap 6, similarly to the case where the nozzle 42 is disposed at the film forming position. Here, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the film forming position. Thereby, the length of the gap 6 that forms the exhaust path connecting the exhaust hole 426 and the through hole 460 can be shortened. Therefore, the conductance of the exhaust path can be made larger than the conductance of the tip portion of the nozzle 42. Accordingly, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be exhausted to the specimen chamber 102 via the exhaust path.

[0129] In Figure 13 the example shown, when the nozzle 42 is disposed at the film forming position, when viewed from the direction along the central axis of the exhaust hole 426, the exhaust hole 426 and the through hole 460 do not overlap. In contrast, in Figure 14 the example shown, when the nozzle 42 is disposed at the retracted position, when viewed from the direction along the central axis of the exhaust hole 426, the exhaust hole 426 and the through hole 460 overlap. Therefore, when the nozzle 42 is disposed at the retracted position, the gas 2 discharged from the exhaust hole 426 can be efficiently exhausted to the specimen chamber 102 via the through hole 460.

[0130] Thus, when the nozzle 42 is disposed at the film forming position, the conductance of the tip portion of the nozzle 42 is larger than the conductance of the exhaust path. Therefore, the amount of the gas 2 blown out from the blowout port 422 can be made larger than the amount of the gas 2 discharged from the exhaust hole 426. Further, when the nozzle 42 is disposed at the retracted position, the conductance of the exhaust path is larger than the conductance of the tip portion of the nozzle 42. Therefore, the amount of the gas 2 discharged from the exhaust hole 426 can be made larger than the amount of the gas 2 blown out from the blowout port 422. The moving mechanism 48 that moves the nozzle 42 functions as a control mechanism for changing the conductance of the exhaust path.

[0131] 4.3. Effects

[0132] In the focused ion beam apparatus 400, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the film forming position. Therefore, in the focused ion beam apparatus 400, the conductance of the exhaust path when the nozzle 42 is disposed at the retracted position can be made larger than the conductance of the exhaust path when the nozzle 42 is disposed at the film forming position. Accordingly, in the focused ion beam apparatus 400, similarly to the above-described focused ion beam apparatus 100, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be exhausted.

[0133] 5. Fifth Embodiment

[0134] 5.1. Focused Ion Beam Device

[0135] Next, the focused ion beam device of the fifth embodiment will be described with reference to the accompanying drawings. Figure 15 FIG. is an example showing the configuration of the focused ion beam device 500 of the fifth embodiment. Hereinafter, in the focused ion beam device 500 of the fifth embodiment, members having the same functions as the constituent members of the focused ion beam device 100 of the first embodiment and the focused ion beam device 200 of the second embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0136] In the above Figures 1 - 4 shown focused ion beam device 100, the gas injection device 40 has a moving mechanism 48 for moving the nozzle 42. In contrast, in the focused ion beam device 500, as Figure 15 shown, it does not have a moving mechanism 48, and the position of the nozzle 42 is fixed.

[0137] In addition, in the focused ion beam device 100, the gap 6 between the nozzle 42 and the receiving tube 46 is divided into a sealed chamber 6a and an exhaust chamber 6b. In contrast, in the focused ion beam device 500, the gap 6 is not divided but is a single space. An exhaust hole 426 communicates with the gap 6. In addition, an exhaust pipe 462 communicates with the gap 6.

[0138] As Figure 15 shown, the gas injection device 40 includes an exhaust pipe 462 connected to the gap 6 and a valve 464 provided in the exhaust pipe 462. The exhaust pipe 462 and the valve 464 constitute the second exhaust system 202.

[0139] The valve 464 is, for example, a gate valve that separates the inside of the exhaust pipe 462 to open and close. The exhaust path of the gas 2 remaining in the nozzle 42 is constituted by the exhaust hole 426 and the gap 6. By opening the valve 464, the exhaust pipe 462 communicates with the gap 6, and the gas 2 remaining in the nozzle 42 can be exhausted through the exhaust path by the second exhaust system 202. In addition, by closing the valve 464, the second exhaust system 202 is not in communication with the exhaust path, and the exhaust in the nozzle 42 can be stopped.

[0140] 5.2. Operation

[0141] Figure 16 and Figure 17 are diagrams for explaining the operation of the focused ion beam device 400. Figure 16 is a cross-sectional view schematically showing the gas injection device 40 when forming a deposition film on the specimen S. Figure 17FIG. 0 is a cross-sectional view schematically showing the gas injection device 40 when exhausting the gas 2 remaining in the nozzle 42.

[0142] When forming a deposition film, the valve 464 is closed to close the exhaust path. Thus, as Figure 16 shown, the gas 2 is not discharged from the exhaust hole 426, and most of the gas 2 supplied from the supply port 424 is blown out from the blowout port 422. Thus, the gas 2 can be blown onto the specimen S, and a deposition film can be formed on the specimen S.

[0143] When exhausting the gas 2 remaining in the nozzle 42, the valve 464 is opened to open the exhaust path. Thus, as Figure 17 shown, the gas 2 remaining in the nozzle 42 can be discharged from the second exhaust system 202 via the exhaust path.

[0144] 5.3. Effects

[0145] The focused ion beam device 500 includes a valve 464 for opening and closing the exhaust path. Therefore, in the focused ion beam device 500, similar to the focused ion beam device 100, the gas 2 remaining in the nozzle 42 can be exhausted.

[0146] 5.4. Modification

[0147] The above-described focused ion beam device 500 is provided with a valve 464 for opening and closing the exhaust path, but the valve 464 may also be a valve for adjusting the flow rate. The valve 464 is, for example, a needle valve capable of adjusting the flow rate. In addition, the valve 464 is not particularly limited as long as it can adjust the flow rate, and a known flow rate adjustment valve such as an orifice capable of adjusting the flow rate can be used.

[0148] When forming a deposition film, the valve 464 is adjusted so that the conductance of the exhaust path is smaller than the conductance of the tip portion of the nozzle 42. Thus, most of the gas 2 supplied from the supply port 424 is blown out from the blowout port 422, and a deposition film can be formed on the specimen S.

[0149] When discharging the gas 2 remaining in the nozzle 42, the valve 464 is adjusted so that the conductance of the exhaust path is larger than the conductance of the tip portion of the nozzle 42. Thus, the gas 2 remaining in the nozzle 42 can be discharged from the second exhaust system 202 via the exhaust path.

[0150] In this way, the valve 464 functions as a control mechanism for changing the conductance of the exhaust path.

[0151] In addition, in the above-described modification, the valve 464 capable of adjusting the flow rate is used to change the conductance of the exhaust path. However, the mechanism for changing the conductance of the exhaust path is not limited to a valve. For example, the conductance of the exhaust path can also be changed by making the diameter of the exhaust hole 426 or the size of the gap 6 variable.

[0152] 6. Others

[0153] Furthermore, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention.

[0154] In the above-described first embodiment, the focused ion beam apparatus 100 includes the SEM column 10 and the FIB column 20. However, the focused ion beam apparatus 100 may not include the SEM column 10. The focused ion beam apparatuses of the second to fifth embodiments may also not include the SEM column 10.

[0155] In addition, the above-described embodiments and modifications are examples and are not limited to these examples. For example, the respective embodiments and respective modifications can be appropriately combined.

[0156] The present invention is not limited to the above-described embodiments, and various further modifications can be made. For example, the present invention includes configurations that are substantially the same as those described in the embodiments. By substantially the same configurations, for example, are meant configurations having the same functions, methods, and results, or configurations having the same purposes and effects. In addition, the present invention includes configurations in which non-essential parts among the configurations described in the embodiments are replaced. In addition, the present invention includes configurations that have the same functions and effects as those described in the embodiments or that can achieve the same purposes. In addition, the present invention includes configurations in which well-known technologies are added to the configurations described in the embodiments.

Claims

1. A focused ion beam apparatus is a focused ion beam apparatus that irradiates an ion beam onto a specimen to process the specimen, characterized in that, Comprising: a nozzle that blows a gas for forming a deposition film from a blow-out port onto the specimen; and a canister that supplies gas into the nozzle, wherein the nozzle has an exhaust hole for exhausting the gas inside the nozzle.

2. The focused ion beam apparatus according to claim 1, wherein a moving mechanism is included, and the moving mechanism is capable of moving the nozzle between a film-forming position where the gas can be blown from the blow-out port onto the specimen and a retracted position different from the film-forming position.

3. The focused ion beam apparatus according to claim 2, wherein the exhaust hole constitutes an exhaust path for exhausting the gas inside the nozzle, when the nozzle is disposed at the film-forming position, the exhaust path is closed, when the nozzle is disposed at the retracted position, the exhaust path is opened.

4. The focused ion beam apparatus according to claim 2, wherein when the nozzle is disposed at the film-forming position, the exhaust hole communicates with a sealed closed chamber, when the nozzle is disposed at the retracted position, the exhaust hole communicates with an exhaust chamber that constitutes an exhaust path for exhausting the gas inside the nozzle.

5. The focused ion beam apparatus according to claim 3 or 4, wherein the exhaust path communicates with a specimen chamber in which the specimen is disposed.

6. The focused ion beam apparatus according to claim 3 or 4, wherein Comprising: a first exhaust system for exhausting the specimen chamber in which the specimen is disposed; and a second exhaust system for exhausting the inside of the nozzle.

7. The focused ion beam apparatus according to claim 2, wherein a receiving tube that houses the nozzle is included, a space between the nozzle and the receiving tube constitutes an exhaust path for exhausting the gas inside the nozzle.

8. The focused ion beam apparatus according to claim 7, wherein a through hole communicating with the space is provided in the receiving tube, a distance between the exhaust hole when the nozzle is disposed at the retracted position and the through hole is smaller than a distance between the exhaust hole when the nozzle is disposed at the film-forming position and the through hole.

9. The focused ion beam apparatus according to claim 8, wherein the through hole does not face the direction of the specimen.

10. The focused ion beam apparatus according to claim 1 or 2, wherein a control mechanism for changing a conductance of an exhaust path used for exhausting the gas inside the nozzle is included.

11. The focused ion beam apparatus according to any one of claims 1 to 4, wherein the blow-out port is provided at a tip of the nozzle.

12. The focused ion beam apparatus according to any one of claims 1 to 4, wherein the exhaust hole penetrates a side wall of the nozzle.

13. The focused ion beam apparatus according to any one of claims 1 to 4, wherein a diameter of the exhaust hole is larger than a diameter of the blow-out port.

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