Showerhead assembly and substrate processing apparatus including same

Abstract

Provided are a showerhead assembly and a substrate processing apparatus including the showerhead assembly, the showerhead assembly being easy to replace and capable of maintaining a fastening force even under repeated thermal shocks. The substrate processing apparatus includes: a chamber housing providing a space for processing a substrate; a substrate supporting unit which is provided inside the chamber case and supports the substrate; a showerhead assembly disposed inside the chamber housing and providing a process gas; and a plasma generating unit that generates plasma for processing the substrate using the processing gas, in which the showerhead assembly includes: a lower plate; the spray head is arranged on the lower plate; the gas distribution plate is arranged on the spray head; and an upper plate disposed on the gas distribution plate, and the showerhead is detachable and attachable.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0196329, filed with the Korean Intellectual Property Office on December 29, 2023, the content of which is incorporated herein by reference in its entirety. Technical field

[0003] The present disclosure relates to a shower head assembly applied to a facility for processing a substrate using plasma and a substrate processing apparatus including the shower head assembly. Background art

[0004] A substrate processing apparatus may include a shower head to supply a processing gas and generate plasma. The shower head may be fastened to a base plate, a gas distribution plate, etc., and may be set as an upper electrode module within the substrate processing apparatus through such fastening.

[0005] However, since the shower head is fastened to the base plate, the gas distribution plate, etc. using bolts, the fastening force may be weakened due to thermal shock generated by repeated substrate processing processes. In addition, since the shower head has a complex assembly process, it is not easy to replace. Summary of the invention

[0006] Aspects of the present disclosure provide a shower head assembly and a substrate processing apparatus including the shower head assembly, the shower head assembly being easy to replace and capable of maintaining the fastening force even under repeated thermal shock.

[0007] However, aspects of the present disclosure are not limited to those described herein. Through reference to the detailed description of the present disclosure given below, the above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains.

[0008] According to an aspect of the present disclosure, there is provided a substrate processing apparatus including: a chamber housing providing a space for processing a substrate; a substrate support unit disposed inside the chamber housing and supporting the substrate; a shower head assembly disposed inside the chamber housing and providing a processing gas; and a plasma generation unit generating plasma for processing the substrate using the processing gas, wherein the shower head assembly includes: a lower plate; a shower head disposed on the lower plate; a gas distribution plate disposed on the shower head; and an upper plate disposed on the gas distribution plate, and the shower head is detachable and attachable.

[0009] According to another aspect of the present disclosure, there is provided a showerhead assembly that supplies a process gas to a substrate processing apparatus. The showerhead assembly includes: a lower plate; a showerhead disposed on the lower plate; a gas distribution plate disposed on the showerhead; and an upper plate disposed on the gas distribution plate. Wherein, the showerhead includes: a first plate; and a second plate disposed on the first plate and joined to the first plate; the showerhead is detachable and attachable, and when the showerhead is replaced, the lower plate, the gas distribution plate, and the upper plate do not separate within the substrate processing apparatus.

[0010] According to another aspect of the present disclosure, there is provided a substrate processing apparatus, including: a chamber housing that provides a space for processing a substrate; a substrate support unit disposed inside the chamber housing and supporting the substrate; a showerhead assembly disposed inside the chamber housing and supplying a process gas; and a plasma generation unit that generates plasma for processing the substrate using the process gas. Wherein, the showerhead assembly includes: a lower plate; a showerhead disposed on the lower plate; a gas distribution plate disposed on the showerhead; and an upper plate disposed on the gas distribution plate. The showerhead includes: a first plate; and a second plate disposed on the first plate and joined to the first plate. The first plate and the second plate are inserted between the lower plate and the gas distribution plate while being joined to each other. The second plate is inserted between the lower plate and the gas distribution plate and then slides inwardly in the substrate processing apparatus. And when the showerhead is replaced, the lower plate, the gas distribution plate, and the upper plate do not separate within the substrate processing apparatus.

[0011] Details of other exemplary embodiments are included in the detailed description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] By referring to the accompanying drawings and describing the exemplary embodiments of the present disclosure in detail, the above and other aspects and features of the present disclosure will become more apparent. In the drawings:

[0013] Figure 1 is a plan view exemplarily showing the internal structure of a semiconductor manufacturing facility according to a first exemplary embodiment;

[0014] Figure 2 is a plan view exemplarily showing the internal structure of a semiconductor manufacturing facility according to a second exemplary embodiment;

[0015] Figure 3 is a plan view exemplarily showing the internal structure of a semiconductor manufacturing facility according to a third exemplary embodiment;

[0016] Figure 4is a cross-sectional view exemplarily showing the internal structure of a substrate processing apparatus according to a first exemplary embodiment;

[0017] Figure 5 is a cross-sectional view exemplarily showing the internal structure of a substrate processing apparatus according to a second exemplary embodiment;

[0018] Figure 6 is a cross-sectional view exemplarily showing the internal structure of a substrate processing apparatus according to a third exemplary embodiment;

[0019] Figure 7 is an exemplary view for describing the structure of a showerhead assembly according to an exemplary embodiment of the present disclosure;

[0020] Figure 8 is an exemplary view for describing the structure of a lower plate constituting a showerhead assembly according to an exemplary embodiment of the present disclosure;

[0021] Figure 9 is an exemplary view for describing the structure of a showerhead according to a first exemplary embodiment of the present disclosure;

[0022] Figure 10 is a first exemplary view for describing a first plate constituting a showerhead according to a first exemplary embodiment of the present disclosure;

[0023] Figure 11 is a second exemplary view for describing a first plate constituting a showerhead according to a first exemplary embodiment of the present disclosure;

[0024] Figure 12 is a first exemplary view for describing a second plate constituting a showerhead according to a first exemplary embodiment of the present disclosure;

[0025] Figure 13 is a second exemplary view for describing a second plate constituting a showerhead according to a first exemplary embodiment of the present disclosure;

[0026] Figure 14 is a first exemplary view for describing a fastening process between a showerhead and a lower plate according to a first exemplary embodiment of the present disclosure;

[0027] Figure 15 is a second exemplary view for describing a fastening process between a showerhead and a lower plate according to a first exemplary embodiment of the present disclosure;

[0028] Figure 16 is a third exemplary view for describing a fastening process between a showerhead and a lower plate according to a first exemplary embodiment of the present disclosure;

[0029] Figure 17is an exemplary view for describing the structure of a showerhead according to a second exemplary embodiment of the present disclosure; and

[0030] Figure 18 is an exemplary view for describing the structure of an upper plate constituting a showerhead assembly according to an exemplary embodiment of the present disclosure. Detailed Description of the Invention

[0031] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and their repeated description will be omitted.

[0032] The present disclosure relates to a substrate processing apparatus for processing a substrate using plasma and a semiconductor manufacturing facility including a plurality of substrate processing apparatuses. The substrate processing apparatus may include a showerhead assembly to supply a processing gas and generate plasma. The showerhead assembly may be configured to be easily replaceable and maintain a fastening force even under repeated thermal shocks. Hereinafter, the substrate processing apparatus and the semiconductor manufacturing facility will be described first, and then the showerhead assembly will be described.

[0033] Figure 1 is a plan view exemplarily showing the internal structure of a semiconductor manufacturing facility according to a first exemplary embodiment. Figure 2 is a plan view exemplarily showing the internal structure of a semiconductor manufacturing facility according to a second exemplary embodiment. Figure 3 is a plan view exemplarily showing the internal structure of a semiconductor manufacturing facility according to a third exemplary embodiment.

[0034] The first direction D1 and the second direction D2 are horizontal directions and form a plane. The first direction D1 may be the front-rear direction, and the second direction D2 may be the left-right direction. Alternatively, the first direction D1 may be the left-right direction, and the second direction D2 may be the front-rear direction. The third direction D3 is the height direction and is a direction perpendicular to the plane formed by the first direction D1 and the second direction D2. The third direction D3 may be the up-down direction.

[0035] Reference Figures 1 to 3 , the semiconductor manufacturing facility 100 may be configured to include a load port module 110, an index module 120, a load lock chamber 130, a transfer module 140, and a processing chamber 150.

[0036] The semiconductor manufacturing facility 100 is a system that processes substrates using an etching process, a cleaning process, a deposition process, etc. The semiconductor manufacturing facility 100 may include one processing chamber, but is not limited thereto, and may also include a plurality of processing chambers. The plurality of processing chambers may include the same type of processing chamber, but is not limited thereto, and may also include different types of processing chambers. When the semiconductor manufacturing facility 100 includes a plurality of processing chambers, the semiconductor manufacturing facility 100 may be configured as a multi-chamber type substrate processing system.

[0037] A load port module 110 is provided so that a container SC on which a plurality of substrates are mounted can be placed. In the above description, for example, the container SC may be a front opening unified pod (FOUP).

[0038] In the load port module 110, the container SC can be loaded or unloaded. In addition, in the load port module 110, the substrates stored in the container SC can be loaded or unloaded.

[0039] When the target of loading or unloading is the container SC, the container transfer device can load the container SC onto the load port module 110 or unload the container SC from the load port module 110. Specifically, by placing the container SC held by the container transfer device on the load port module 110, the container SC can be loaded onto the load port module 110. In addition, the container SC can be unloaded from the load port module 110 by the container transfer device that holds the container SC placed on the load port module 110. Although not shown in Figures 1 to 3 the container transfer device may be an overhead hoist transporter (OHT).

[0040] When the target for loading or unloading is a substrate, the first transfer robot 122 can load the substrate onto the container SC placed on the load port module 110 or unload the substrate from the container SC placed on the load port module 110. In the case of unloading the substrate, when the container SC is placed on the load port module 110, the first transfer robot 122 can approach the load port module 110, and then can carry out the substrate inside the container SC. In the case of loading the substrate, when the processing of the substrate is completed in the processing chamber 150, the first transfer robot 122 can carry out the substrate in the load lock chamber 130, and then carry the substrate into the container SC.

[0041] A plurality of load port modules 110 may be provided in front of the transfer module 120. For example, three load port modules 110a, 110b, and 110c (such as a first load port module 110a, a second load port module 110b, and a third load port module 110c) may be provided in front of the transfer module 120.

[0042] When multiple load port modules 110 are provided in front of the indexing module 120, different types of articles can be mounted on the cassette SC that is mounted on each load port module. For example, when a first load port module 110a, a second load port module 110b, and a third load port module 110c are provided in front of the indexing module 120, a wafer-type sensor can be mounted on a first cassette SC1 that is placed on the first load port module 110a, a substrate (i.e., a wafer) can be mounted on a second cassette SC2 that is placed on the second load port module 110b, and consumable components (such as a focusing ring and an edge ring) can be mounted on a third cassette SC3 that is placed on the third load port module 110c.

[0043] However, this exemplary embodiment is not limited thereto. The same type of articles can also be mounted on the cassettes SC that are placed on each load port module. Alternatively, the same type of articles can be mounted on the cassettes that are placed on some of the multiple load port modules, and different types of articles can also be mounted on the cassettes that are placed on some other load port modules.

[0044] The indexing module 120 can be provided between the load port module 110 and the load lock chamber 130, and can be configured as an interface for transferring a substrate between the cassette SC on the load port module 110 and the load lock chamber 130.

[0045] The indexing module 120 can include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 can be provided inside the first module housing 121, and can transfer a substrate between the load port module 110 and the load lock chamber 130. The first module housing 121 can have an internal environment provided as an atmospheric pressure environment, and the first transfer robot 122 can operate in the atmospheric pressure environment. One first transfer robot 122 can be provided inside the first module housing 121, but the present disclosure is not limited thereto, and multiple first transfer robots 122 can also be provided.

[0046] Although in Figures 1 to 3Although not shown in the figure, the transfer module 120 may include a buffer chamber. The buffer chamber may temporarily store the unprocessed substrates before transporting them to the load lock chamber 130. In addition, the buffer chamber may temporarily store the preprocessed substrates before transporting them to the container SC on the load port module 110. The buffer chamber may be provided on a sidewall other than the sidewall adjacent to the load port module 110 or the sidewall adjacent to the load lock chamber 130, but is not limited thereto, and the buffer chamber may also be provided on the sidewall adjacent to the load port module 110. Optionally, the buffer chamber may be provided on the sidewall adjacent to the load lock chamber 130.

[0047] In the present exemplary embodiment, a front-end module (FEM) may be provided on one side of the load lock chamber 130. The front-end module (FEM) may include a load port module 110 and a transfer module 120, and may be configured as an equipped front-end module (EFEM), for example.

[0048] As described above, a plurality of load port modules 110 may be provided within the semiconductor manufacturing facility 100. Referring to Figures 1 to 3 the example, the plurality of load port modules may have a structure in which the plurality of load port modules are arranged in the first direction D1. However, the plurality of load port modules are not limited thereto, and may also have a structure in which the plurality of load port modules are stacked in the third direction D3 (i.e., the vertical direction D3). When the plurality of load port modules are stacked in the vertical direction D3, the front-end module may be configured as a vertically stacked EFEM.

[0049] The load lock chamber 130 may serve as a buffer chamber between the input port and the output port within the semiconductor manufacturing facility 100. That is, the load lock chamber 130 may be used to temporarily store the unprocessed substrates or the preprocessed substrates between the load port module 110 and the processing chamber 150. Although not shown in Figures 1 to 3 the figure, the load lock chamber 130 may include a buffer table for temporarily storing substrates therein.

[0050] A plurality of load lock chambers 130 may be provided between the transfer module 120 and the transfer module 140. For example, two load lock chambers 130a and 130b (such as a first load lock chamber 130a and a second load lock chamber 130b) may be provided between the transfer module 120 and the transfer module 140.

[0051] A plurality of load lock chambers may be provided in the same direction as the arrangement direction of the plurality of load port modules. Referring to Figures 1 to 3In an example, the first load lock chamber 130a and the second load lock chamber 130b may be disposed between the indexing module 120 and the transfer module 140 in a direction the same as the arrangement direction of the three load port modules 110a, 110b, and 110c (i.e., in the first direction D1). The first load lock chamber 130a and the second load lock chamber 130b may be arranged as a symmetric single-layer structure, in which the first load lock chamber 130a and the second load lock chamber 130b are spaced apart from each other in the first direction D1.

[0052] However, this exemplary embodiment is not limited thereto. A plurality of load lock chambers may also be arranged in a direction different from the arrangement direction of the plurality of load port modules. The first load lock chamber 130a and the second load lock chamber 130b may be disposed between the indexing module 120 and the transfer module 140 in a direction different from the arrangement direction of the three load port modules 110a, 110b, and 110c (i.e., in the vertical direction D3). The first load lock chamber 130a and the second load lock chamber 130b may be arranged as a double-layer structure, in which the first load lock chamber 130a and the second load lock chamber 130b are spaced apart from each other in the vertical direction.

[0053] Any one of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store an unprocessed substrate transported from the indexing module 120 to the transfer module 140. In addition, the other load lock chamber may temporarily store a preprocessed substrate transported from the transfer module 140 to the indexing module 120. However, the first load lock chamber 130a and the second load lock chamber 130b are not limited thereto, and may also jointly perform the function of temporarily storing an unprocessed substrate and the function of temporarily storing a preprocessed substrate.

[0054] The load lock chamber 130 may change its internal environment to a vacuum environment or an atmospheric pressure environment using a gate valve or the like. Specifically, when the first transfer robot 122 of the indexing module 120 loads a substrate into the load lock chamber 130 or the first transfer robot 122 unloads a substrate from the load lock chamber 130, the inside of the load lock chamber 130 may form an environment the same as or similar to the internal environment of the indexing module 120. In addition, when the second transfer robot 142 of the transfer module 140 loads a substrate into the load lock chamber 130, or when the second transfer robot 142 unloads a substrate from the load lock chamber 130, the inside of the load lock chamber 130 may form an environment the same as or similar to the internal environment of the transfer module 140. In this way, the load lock chamber 130 can prevent the change of the internal pressure state of the indexing module 120 or the internal pressure state of the transfer module 140.

[0055] The transfer module 140 may be disposed between the load lock chamber 130 and the processing chamber 150, and may be configured as an interface to allow the substrate to be transferred between the load lock chamber 130 and the processing chamber 150.

[0056] The transfer module 140 may include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 may be disposed inside the second module housing 141 and may transfer the substrate between the load lock chamber 130 and the processing chamber 150. The second module housing 141 may have an internal environment provided as a vacuum environment, and the second transfer robot 142 may operate in the vacuum environment. One second transfer robot 142 may be disposed within the second module housing 141, but the present disclosure is not limited thereto, and a plurality of second transfer robots 142 may also be provided.

[0057] The transfer module 140 may be connected to a plurality of processing chambers 150. To this end, the second module housing 141 may include a plurality of sides, and the second transfer robot 142 may be configured to freely rotate through each side of the second module housing 141 to load the substrate into the plurality of processing chambers 150 or unload the substrate from the plurality of processing chambers 150.

[0058] The processing chamber 150 is for processing the substrate. When an unprocessed substrate is provided, the processing chamber 150 may process the substrate, and the pre-processed substrate may be provided to the load lock chamber 130 through the transfer module 140. The processing chamber 150 will be described in more detail later.

[0059] When the semiconductor manufacturing facility 100 includes a plurality of processing chambers, the semiconductor manufacturing facility 100 may be formed in a structure having a cluster platform. For example, as Figure 1 shown in the example of Figure 2 a plurality of processing chambers 150 may be arranged in a cluster relative to the transfer module 140. However, the present exemplary embodiment is not limited thereto. When the semiconductor manufacturing facility 100 includes a plurality of processing chambers, the semiconductor manufacturing facility 100 may be formed in a structure having a quad platform. For example, as Figure 3 shown in the example of

[0060] Although in Figures 1 to 3Although not shown in the figure, the semiconductor manufacturing facility 100 may further include a control device. The control device is used to control the overall operation of each module constituting the semiconductor manufacturing facility 100. For example, the control device may control the substrate transportation of the first transfer robot 122 or the second transfer robot 142, control the change of the internal environment of the load lock chamber 130, and control the entire substrate processing process of the processing chamber 150.

[0061] The control device may include: a processor that executes control over each component constituting the semiconductor manufacturing facility 100; a network that communicates with each component through wired or wireless communication; one or more instructions related to controlling the function or operation of each component; a storage device that stores processing recipes including instructions, various data, etc. The control device may further include a user interface, which includes an input device and an output device, etc. The input device is used for an operator to perform command input operations, etc. to manage the semiconductor manufacturing facility 100, and the output device is used to visualize and display the operation state of the semiconductor manufacturing facility 100. The control device may be set as a computing device for data processing and analysis, command transmission, etc.

[0062] The instructions may be provided in the form of a computer program or an application. The computer program may be stored on a computer-readable recording medium including one or more instructions. The instructions may include code generated by a compiler, code that can be executed by an interpreter, etc. The storage device may be set as one or more storage media selected from flash memory, HDD, SSD, card-type memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disk, and optical disk.

[0063] Next, the processing chamber 150 will be described. The processing chamber 150 may have a surface made of acid-resistant aluminum (alumite) on which an anodized film is formed, and its interior may be airtight. A plurality of processing chambers 150 may be provided in the semiconductor manufacturing facility 100 and may be arranged to be spaced apart from each other around the transfer module 140. However, the processing chamber 150 is not limited to this and may be provided singly in the semiconductor manufacturing facility 100. The processing chamber 150 may be set in a cylindrical shape, but is not limited to this, and may also be set in a shape other than the cylindrical shape.

[0064] As described above, the processing chamber 150 may process a substrate. Hereinafter, the processing chamber 150 is defined as a substrate processing device, and the internal structure of the processing chamber 150 is described.

[0065] Figure 4 is a cross-sectional view exemplarily showing the internal structure of a substrate processing device according to a first exemplary embodiment. Refer to Figure 4, the substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a processing gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a liner unit 260, a baffle unit 270, a window module WM, and an antenna unit 280.

[0066] The substrate processing apparatus 200 may process a substrate W. The substrate processing apparatus 200 may use a dry process to process the substrate W. For example, the substrate processing apparatus 200 may process the substrate W in a vacuum environment. The substrate processing apparatus 200 may use an etching process to process the substrate W. However, the substrate processing apparatus 200 is not limited thereto, and may also use a deposition process or a cleaning process to process the substrate W.

[0067] The chamber housing CH provides a space in which a plasma process (i.e., a process of processing the substrate W using plasma) is performed. The chamber housing CH may have a surface made of acid-resistant aluminum (alumite) on which an anodized film is formed, and the interior of the chamber housing CH may be airtight. The chamber housing CH may be provided in a cylindrical shape, but is not limited thereto, and may also be provided in other shapes. The chamber housing CH may have an exhaust hole 201 formed in its lower portion.

[0068] The exhaust hole 201 may be connected to an exhaust line 203 equipped with a pump 202. The exhaust hole 201 may discharge process by-products generated during the plasma process and gases remaining inside the chamber housing CH to the outside of the chamber housing CH through the exhaust line 203. In this case, the internal space of the chamber housing CH may be decompressed.

[0069] An opening 204 may be formed to penetrate a sidewall of the chamber housing CH. The opening 204 may be provided as a passage for the substrate W to enter and exit the inside of the chamber housing CH. The opening 204 may be configured to automatically open and close, for example, through a door assembly 205.

[0070] The door assembly 205 may be configured to include an outer door 206 and a door driver 207. The outer door 206 may open and close the opening 204 in the outer wall of the chamber housing CH. The outer door 206 may move in the height direction D3 of the substrate processing apparatus 200 under the control of the door driver 207. At least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder may be used to operate the door driver 207.

[0071] The substrate support unit 210 is installed in the inner lower region of the chamber housing CH. The substrate support unit 210 can adsorb and support the substrate W using electrostatic force. For example, the substrate support unit 210 can be provided as an electrostatic chuck (ESC). However, the substrate support unit 210 is not limited thereto, and various other methods (such as vacuum, mechanical clamping, etc.) can also be used to support the substrate W.

[0072] When the substrate support unit 210 is provided as an electrostatic chuck (ESC), the substrate support unit 210 can be configured to include a base plate 211 and a dielectric layer 212. The dielectric layer 212 can be disposed on the base plate 211 and can adsorb and support the substrate W placed on the dielectric layer 212. The base plate 211 can be formed of a material having excellent corrosion resistance and heat resistance. For example, the base plate 211 can be provided as an aluminum body. The dielectric layer 212 can be formed of, for example, ceramics as a material and can be provided as a ceramic disk.

[0073] Although not shown in Figure 4 the substrate support unit 210 can be configured to further include a bonding layer. The bonding layer can bond the base plate 211 and the dielectric layer 212. For example, the bonding layer can be formed to include a polymer.

[0074] A ring structure 213 is provided to surround the outer edge region of the dielectric layer 212. When a plasma process is performed inside the chamber housing CH, the ring structure 213 can be used to concentrate ions onto the substrate W. The ring structure 213 can be formed of silicon as a material. For example, the ring structure 213 can be provided as a focusing ring.

[0075] Although not shown in Figure 4 the ring structure 213 can also include an edge ring. The edge ring can be disposed on the lower side or the outer side of the focusing ring. The edge ring can be used to prevent the side surface of the dielectric layer 212 from being damaged by plasma. The edge ring can be formed of an insulating material (such as ceramics or quartz) as a material.

[0076] When a substrate processing process is performed inside the chamber housing CH, a heating member 214 and a cooling member 215 are provided to maintain the substrate W at the process temperature. The heating member 214 can be installed inside the dielectric layer 212 and can be provided as a heating wire. The cooling member 215 can be installed inside the base plate 211 and can be provided as a cooling tube through which a refrigerant moves. A cooler 216 can supply the refrigerant to the cooling member 215. The cooler 216 can use cooling water as the refrigerant, but is not limited thereto, and helium gas (He) can also be used. Optionally, the cooler 216 can also use both cooling water and helium gas as the refrigerant. At the same time, the heating member 214 can also not be provided inside the substrate support unit 210.

[0077] The cleaning gas supply unit 220 supplies a cleaning gas to the dielectric layer 212 or the ring structure 213 to remove remaining impurities in the dielectric layer 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may supply nitrogen gas (N2) as the cleaning gas.

[0078] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply pipe 222. The cleaning gas supply pipe 222 may be connected to the space between the dielectric layer 212 and the ring structure 213. The cleaning gas supplied by the cleaning gas supply source 221 may move through the cleaning gas supply pipe 222 into the space between the dielectric layer 212 and the ring structure 213 to remove remaining impurities on the edge portion of the dielectric layer 212 or the upper portion of the ring structure 213.

[0079] The process gas supply unit 230 supplies a process gas into the internal space of the chamber housing CH. The process gas supply unit 230 may supply the process gas into the internal space of the chamber housing CH through a hole formed by penetrating the upper cover (i.e., the window module WM) of the chamber housing CH. However, the process gas supply unit 230 is not limited thereto, and may also supply the process gas into the internal space of the chamber housing CH through a hole formed by penetrating the side wall of the chamber housing CH.

[0080] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply pipe 232. The process gas supply source 231 may supply a gas for processing the substrate W as the process gas. The process gas supply source 231 may be provided as a single source within the substrate processing apparatus 200, but is not limited thereto, and may also be provided as multiple sources. When multiple process gas supply sources 231 are provided within the substrate processing apparatus 200, the multiple process gas supply sources 231 may supply the same type of process gas, but are not limited thereto, and may also supply different types of process gas.

[0081] The showerhead unit 240 sprays the process gas supplied from the process gas supply source 231 over the entire area of the substrate W disposed in the internal space of the chamber housing CH. The showerhead unit 240 may be connected to the process gas supply source 231 through the process gas supply pipe 232.

[0082] The showerhead unit 240 may be disposed in the internal space of the chamber housing CH and may include a plurality of gas supply holes 242. The plurality of gas supply holes 242 may be formed by penetrating the surface of the main body 241 in the vertical direction D3. The plurality of gas supply holes 242 may be formed to be spaced apart from each other at regular intervals on the main body 241. The showerhead unit 240 may uniformly spray the process gas over the entire area of the substrate W through the plurality of gas supply holes 242.

[0083] The showerhead unit 240 may be installed within the chamber housing CH to face the substrate support unit 210 in the vertical direction D3. The showerhead unit 240 may be configured to have a diameter larger than that of the dielectric layer 212. However, the showerhead unit 240 is not limited thereto and may also be configured to have the same diameter as the dielectric layer 212. The showerhead unit 240 may be formed of silicone resin as a material, but is not limited thereto and may also be formed of metal as a material.

[0084] Although not shown in Figure 4 the showerhead unit 240 may be divided into a plurality of units. That is, the showerhead unit 240 may be divided into three modules, such as a first head module, a second head module, and a third head module. The first head module may be disposed at a position corresponding to the central region of the substrate W. The second head module may be disposed to surround the outer edge of the first head module. The second head module may be disposed at a position corresponding to the intermediate region of the substrate W. The third head module may be disposed to surround the outer edge of the second head module. The third head module may be disposed at a position corresponding to the edge region of the substrate W.

[0085] The plasma generation unit 250 generates plasma from the gas remaining in the discharge space. Here, the discharge space may be the internal space of the chamber housing CH and may be the space formed between the showerhead unit 240 and the window module WM. Alternatively, the discharge space may be the space formed between the substrate support unit 210 and the showerhead unit 240. When the discharge space is the space formed between the substrate support unit 210 and the showerhead unit 240, the discharge space may be divided into a plasma region and a processing region. The plasma region may be formed above the processing region.

[0086] The plasma generation unit 250 may generate plasma in the discharge space using an inductively coupled plasma (ICP) source. For example, by using the substrate support unit 210 and the antenna unit 280 as the first electrode (lower electrode) and the second electrode (upper electrode), respectively, the plasma generation unit 250 may generate plasma in the discharge space.

[0087] However, the present exemplary embodiment is not limited thereto. The plasma generation unit 250 may also generate plasma in the discharge space using a capacitively coupled plasma (CCP) source. For example, by using the substrate support unit 210 and the showerhead unit 240 as the first electrode (lower electrode) and the second electrode (upper electrode), respectively, the plasma generation unit 250 may generate plasma in the discharge space. Here, the case where the plasma generation unit 250 is configured as an ICP source will be described, and the case where the plasma generation unit 250 is configured as a CCP source will be described later.

[0088] The plasma generation unit 250 may be configured to include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254.

[0089] The first high-frequency power supply 251 applies RF power to the first electrode. The first high-frequency power supply 251 may be used as a plasma source for generating plasma within the chamber housing CH. However, the first high-frequency power supply 251 is not limited thereto and may also be used in conjunction with the second high-frequency power supply 253 to control the characteristics of the plasma within the chamber housing CH.

[0090] A plurality of first high-frequency power supplies 251 may be provided within the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a first matching network electrically connected to each of the first high-frequency power supplies 251. When frequency power of different amplitudes is input from the plurality of first high-frequency power supplies 251, the first matching network may be used to match the frequency power and apply the matched frequency power to the first electrode.

[0091] The first transmission line 252 may connect the first electrode and ground (GND). The first high-frequency power supply 251 may be mounted on the first transmission line 252. However, the first transmission line 252 is not limited thereto and may also connect the first electrode and the first high-frequency power supply 251. For example, the first transmission line 252 may be provided as an RF rod.

[0092] The second high-frequency power supply 253 applies RF power to the second electrode. The second high-frequency power supply 253 may be used to control the characteristics of the plasma within the chamber housing CH. For example, the second high-frequency power supply 253 may be used to control the ion bombardment energy within the chamber housing CH.

[0093] A plurality of second high-frequency power supplies 253 may be provided within the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a second matching network electrically connected to each of the second high-frequency power supplies 253. When frequency power of different amplitudes is input from the plurality of second high-frequency power supplies 253, the second matching network may be used to match the frequency power and apply the matched frequency power to the second electrode.

[0094] The second transmission line 254 may connect the second electrode and GND. The second high-frequency power supply 253 may be mounted on the second transmission line 254.

[0095] The inner lining unit 260 is also defined as a wall lining and protects the interior of the chamber housing CH from arc discharges generated during the process of exciting the processing gas or impurities generated during the substrate processing. The inner lining unit 260 may be formed to cover the inner sidewall of the chamber housing CH.

[0096] The liner unit 260 may include a main body 261 and a support ring 262 on the upper part of the main body 261. The support ring 262 may protrude outward from the upper part of the main body 261 in the first direction D1, and may be used to fix the main body 261 to the chamber housing CH.

[0097] The baffle unit 270 is used to discharge process by-products and unreacted gases from the plasma inside the chamber housing CH to the outside. The baffle unit 270 may be installed in the space between the substrate support unit 210 and the inner sidewall (or the liner unit 260) of the chamber housing CH, and may be installed adjacent to the exhaust hole 201. The baffle unit 270 may be provided in an annular shape between the substrate support unit 210 and the inner sidewall of the chamber housing CH.

[0098] The baffle unit 270 may include a plurality of slots that pass through the main body in the up-down direction D3 to control the flow of the process gas inside the chamber housing CH. The baffle unit 270 may be formed of an etching-resistant material to minimize damage or deformation caused by radicals or the like in the inner space of the chamber housing CH where plasma is generated. For example, the baffle unit 270 may be formed to include quartz.

[0099] The window module WM serves as an upper cover of the chamber housing CH to seal the inner space of the chamber housing CH. The window module WM may be provided separately from the chamber housing CH, but is not limited thereto, and may also be provided integrally with the chamber housing CH. The window module WM may be formed as a dielectric window using an insulating material. For example, the window module WM may be formed of alumina as the material. The window module WM may also include a coating film on its surface to suppress the generation of particles when a plasma process is performed in the inner space of the chamber housing CH.

[0100] The antenna unit 280 generates a magnetic field and an electric field inside the chamber housing CH to excite the process gas into plasma. The antenna unit 280 may be operated using RF power applied from the second high-frequency power supply 253. The antenna unit 280 may be provided on the chamber housing CH. For example, the antenna unit 280 may be provided on the window module WM. However, the antenna unit 280 is not limited thereto, and may also be provided on the sidewall of the chamber housing CH.

[0101] The antenna unit 280 may include an antenna 282 inside or on the surface of a main body 281. The antenna 282 may be provided to form a closed loop using a coil. The antenna 282 may be formed in a spiral shape or various other shapes along the first direction D1 (i.e., the width direction D1 of the chamber housing CH).

[0102] The antenna unit 280 may be formed in a planar type. However, the antenna unit 280 is not limited thereto and may also be formed in a cylindrical type. When the antenna unit 280 is formed in a planar type, the antenna unit 280 may be disposed on the chamber housing CH. When the antenna unit 280 is formed in a cylindrical type, the antenna unit 280 may be disposed to surround the outer wall of the chamber housing CH.

[0103] In the above, the case where the plasma generation unit 250 is provided as an ICP source has been described with reference to Figure 4 Hereinafter, the case where the plasma generation unit 250 is provided as a CCP source will be described with reference to Figure 5 and Figure 6 Hereinafter, compared with the case of Figure 4 the description of the overlapping part will be omitted, and only the parts corresponding to the differences will be described.

[0104] Figure 5 is a cross-sectional view exemplarily showing the internal structure of the substrate processing apparatus according to the second exemplary embodiment. In addition, Figure 6 is a cross-sectional view exemplarily showing the internal structure of the substrate processing apparatus according to the third exemplary embodiment.

[0105] With reference to Figure 5 and Figure 6 , the substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a processing gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a liner unit 260, a baffle unit 270, and a window module WM. That is, compared with the substrate processing apparatus 200 of Figure 4 the substrate processing apparatus 200 of Figure 5 and Figure 6 may not include the antenna unit 280.

[0106] As Figure 5 shown, the plasma generation unit 250 may be configured to include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254. However, as Figure 6 shown, the plasma generation unit 250 is not limited thereto and may also be configured to include a first high-frequency power supply 251, a first transmission line 252, and a second transmission line 254. That is, compared with the plasma generation unit 250 of Figure 5 the plasma generation unit 250 of Figure 6 may not include the second high-frequency power supply 253.

[0107] In Figure 4In the example, the second transmission line 254 can be connected to the antenna 282 of the antenna unit 280. The second high-frequency power supply 253 can apply RF power to the antenna 282 of the antenna unit 280. In Figure 5 In the example, the second transmission line 254 can be connected to the main body 241 of the showerhead unit 240. The second high-frequency power supply 253 can apply RF power to the main body 241 of the showerhead unit 240.

[0108] In Figure 5 In the example, the second high-frequency power supply 253 can be mounted on the second transmission line 254. In Figure 6 In the example, the second high-frequency power supply 253 may not be mounted on the second transmission line 254. When the second high-frequency power supply 253 is mounted on the second transmission line 254, the plasma generation unit 250 can apply multiple frequencies to the substrate processing apparatus 200.

[0109] The showerhead unit 240 can be configured as a showerhead assembly that includes a base plate, a showerhead, a gas distribution plate, and a heater / cooling plate. The showerhead unit 240 can be configured as an upper electrode module within the substrate processing apparatus 200. Hereinafter, the showerhead assembly will be described.

[0110] Figure 7 is an exemplary view for describing the structure of a showerhead assembly according to an exemplary embodiment of the present disclosure. Referring to Figure 7 , the showerhead assembly 300 can be configured to include a lower plate 310, a showerhead 320, a gas distribution plate 330, and an upper plate 340.

[0111] The lower plate 310 is a base plate, and when installed in the substrate processing apparatus 200, the lower plate 310 can be located at the lowest portion in the third direction D3. The lower plate 310 can be fixed within the substrate processing apparatus 200. When replacing the showerhead 320, the lower plate 310 may not be disassembled and reattached.

[0112] Referring to Figure 8 , the lower plate 310 can be configured to include a third body 311 and studs 312. The third body 311 can have a flat shape. The studs 312 can project upward from the upper surface of the third body 311. A plurality of studs 312 can be provided on the third body 311. The studs 312 can be inserted into grooves formed on the upper surface of the third body 311. As will be described later, the showerhead 320 can be connected to the lower plate 310 through the studs 312. Referring to Figure 15 and Figure 16, the elastomer 313 can be positioned within the groove of the third body 311 so that when fastening between the lower plate 310 and the showerhead 320, the stud 312 can move elastically. The elastomer 313 can be disposed below the stud 312 within the groove. Optionally, the elastomer 313 can be disposed around the stud 312 within the groove. For example, the elastomer 313 can be a spring. Figure 8 is an exemplary view for describing the structure of the lower plate constituting the showerhead assembly according to an exemplary embodiment of the present disclosure.

[0113] will be referred to again Figure 7 for description.

[0114] When installed within the substrate processing apparatus 200, the showerhead 320 can be disposed on the lower plate 310. The showerhead 320 can include a plurality of gas supply holes to supply a processing gas into the internal space of the chamber housing CH. The lower plate 310 also includes a plurality of gas supply holes. The gas supply holes formed in the showerhead 320 and the gas supply holes formed in the lower plate 310 can be capable of penetrating each other and can be formed to have the same size.

[0115] The showerhead 320 is located at the gas injection end within the substrate processing apparatus 200 using plasma and serves as a processing gas injector and an electrode. Since the showerhead 320 is directly exposed to the internal space of the chamber housing CH where the substrate processing process is performed, the showerhead 320 needs to be replaced after being used for a period of time.

[0116] After the substrate processing process is performed multiple times, the showerhead 320 can be replaced. The used showerhead can be detached from the lower plate 310, and the unused showerhead can be attached to the lower plate 310. The lower plate 310 is not replaced, and only the showerhead 320 can be replaced. The lower plate 310 can be formed by including an anti-etching material or an anti-plasma material.

[0117] Referring to Figure 9 , the showerhead 320 can be configured to include a first plate 410 and a second plate 420. The second plate 420 can be disposed below the first plate 410. The upper surface of the second plate 420 can contact the lower surface of the first plate 410. A portion of the upper surface of the second plate 420 can be formed to engage with a portion of the lower surface of the first plate 410. The second plate 420 can be formed of the same material as the first plate 410, but is not limited thereto. Figure 9 is an exemplary view for describing the structure of the showerhead according to the first exemplary embodiment of the present disclosure.

[0118] Figure 10 is a first exemplary view for describing the first plate constituting the showerhead according to the first exemplary embodiment of the present disclosure. Figure 11is a second exemplary view of the first plate constituting the nozzle head according to the first exemplary embodiment of the present disclosure. When viewed from one side, the first plate 410 of the nozzle head 320 may be formed as shown in Figure 10 When viewed from above, the first plate 410 of the nozzle head 320 may be formed as shown in Figure 11 As shown.

[0119] Referring to Figure 10 and Figure 11 , the first plate 410 may be configured to include a first body 411 and a first inclined portion 412. The first inclined portion 412 may be formed on the surface of the first body 411. The first inclined portion 412 may be formed on the lower surface of the first body 411. A plurality of first inclined portions 412 may be formed along the first direction D1 (i.e., the length direction D1 of the first body 411). The plurality of first inclined portions 412 may have the same inclination angle. The plurality of first inclined portions 412 may be formed to have an inclination angle θ1.

[0120] A long first groove 413 may be formed at one end of the first body 411. The first groove 413 may be formed along the length direction D1 of the first body 411. One side of the first body 411 having the first groove 413 formed therein may be open, but the other side may not be open. The first groove 413 penetrates the first body 411 in a direction perpendicular to the length direction D1.

[0121] Figure 12 is a first exemplary view of the second plate constituting the nozzle head according to the first exemplary embodiment of the present disclosure. Figure 13 is a second exemplary view of the second plate constituting the nozzle head according to the first exemplary embodiment of the present disclosure. When viewed from one side, the second plate 420 of the nozzle head 320 may be formed as shown in Figure 12 When viewed from above, the second plate 420 of the nozzle head 320 may be formed as shown in Figure 13 As shown.

[0122] Referring to Figure 12 and Figure 13 , the second plate 420 may be configured to include a second body 421 and a second inclined portion 422. The second inclined portion 422 may be formed on the surface of the second body 421. The second inclined portion 422 may be formed on the upper surface of the second body 421. The second inclined portion 422 may have a shape that engages with the first inclined portion 412. A plurality of second inclined portions 422 may be formed along the length direction D1 of the second body 421. The plurality of second inclined portions 422 may have the same inclination angle. The plurality of second inclined portions 422 may be formed to have an inclination angle θ2. The plurality of second inclined portions 422 may have the same inclination angle as the plurality of first inclined portions 412.

[0123] A long second groove 423 may be formed at one end of the second body 421. The second groove 423 may be formed along the length direction D1 of the second body 421. One side of the second body 421 having the second groove 423 formed therein may be opened, but the other side thereof may not be opened. The second groove 423 penetrates the second body 421 in a direction perpendicular to the length direction D1. The second groove 423 may be formed such that the same side as that of the first groove 413 is opened. The second groove 423 may have the same dimensions as the first groove 413.

[0124] The nozzle head 320 is first stacked on the upper guide plate and assembled to the gas distribution plate 330 using a fastener including a bolt. In order to replace the nozzle head 320 that has been used for a certain number of cycles in such a stacked structure, all the stacked components need to be disassembled. Since a wide range of disassembly and attachment occur during such a process, there are problems of requiring a large amount of man-hours and having poor reproducibility.

[0125] In addition, a thermally conductive pad that needs to be compressed is inserted between the stacked components, and due to permanent deformation after a single disassembly process, the pad may not be reusable. Therefore, when the nozzle head 320 is replaced, the number of consumed pads increases, resulting in increased maintenance costs.

[0126] In addition, due to the characteristics of the substrate processing apparatus 200, in an environment of repeated heating and cooling, the components tightened by bolts are likely to become loose due to vibration. Depending on the degree of loosening that has occurred, the tightening force decreases, which causes a temperature change of the nozzle head 320, thereby affecting the substrate processing process.

[0127] The present disclosure provides an assembling method that facilitates the replacement of the nozzle head 320 and provides a constant tightening force even under repeated thermal shocks.

[0128] Next, a method of tightening the nozzle head 320 will be described. Figure 14 is a first exemplary view for describing the tightening process between the nozzle head and the lower plate according to the first exemplary embodiment of the present disclosure.

[0129] Figure 15 is a second exemplary view for describing the tightening process between the nozzle head and the lower plate according to the first exemplary embodiment of the present disclosure. Figure 16 is a third exemplary view for describing the tightening process between the nozzle head and the lower plate according to the first exemplary embodiment of the present disclosure.

[0130] According to the present disclosure, the nozzle assembly 300 can replace only the nozzle head 320 without the need to disassemble the components located above and below the nozzle head 320, that is, the lower plate 310, the gas distribution plate 330, and the upper plate 340.

[0131] Referring to Figure 14 Figure 14 , when the nozzle assembly 300 is initially installed in the substrate processing apparatus 200, the lower plate 310 is installed in the substrate processing apparatus 200, and then the nozzle 320 is fixed to the lower plate 310. The lower plate 310 may have a plurality of studs 312 installed on the third body 311 in the vertical direction D3, and the nozzle 320 may be connected to the lower plate 310 through the plurality of studs 312.

[0132] When replacing the nozzle 320, the lower plate 310 may not be disassembled and reattached within the substrate processing apparatus 200. When starting the installation, the lower plate 310 may be fixed within the substrate processing apparatus 200. That is, only the nozzle 320 may be disassembled and reattached. When replacing the nozzle 320, the nozzle 320 may be located on the side surface of the lower plate 310, and the nozzle 320 may move in the first direction D1. The nozzle 320 may be fixed to the lower plate 310 by sequentially passing through the plurality of studs 312.

[0133] Referring to Figure 15 and Figure 16 Figure 16 , by inserting the two plates 410 and 420 obliquely and then sliding the lower second plate 420 inward in the longitudinal direction D1, the fastening between the lower plate 310 and the nozzle 320 can be completed.

[0134] The first plate 410 and the second plate 420 may include a repeating pattern of inclined portions 412 and 422 on the surfaces in contact with each other. Referring to Figure 15 Figure 15 , since the first plate 410 and the second plate 420 completely overlap during the initial insertion, the plates 410 and 420 can be inserted inward without interference because the total height of the two plates 410 and 420 is lower than the protruding height of the studs 312. Referring to Figure 16 Figure 16 , when the second plate 420 then slides completely in the longitudinal direction D1, the total height of the two plates 410 and 420 increases due to the height of the inclined portions 412 and 422 in the third direction D3, and the studs 312 fastened to the nozzle 320 can be pulled and tightened by the amount of displacement that occurs at this time. The first plate 410 and the second plate 420 can prevent the movement of the two plates 410 and 420 and prevent the deformation of the two plates 410 and 420 by making the flat portions rather than the inclined portions 412 and 422 contact each other.

[0135] During the process of fastening the nozzle 320, the studs 312 assembled to the nozzle 320 may be lifted by the first plate 410 of the two plates 410 and 420 and may not be subjected to a lateral force.

[0136] As described above, the first inclined portion 412 of the first plate 410 and the second inclined portion 422 of the second plate 420 may be formed to engage with each other. In a state where the first inclined portion 412 and the second inclined portion 422 are formed to engage with each other, after the first inclined portion 412 and the second inclined portion 422 are fastened to the lower plate 310 by the studs 312, the nozzle head 320 may be fixed by the lower plate 310 located below and the gas distribution plate 330 located above through the sliding movement of the second plate 420 in the first direction D1.

[0137] Referring to Figure 17 , in order to reduce the friction between the first plate 410 and the second plate 420 while performing the sliding movement of the second plate 420, a first coating layer 414 may be formed on the surface of the first inclined portion 412. Similarly, a second coating layer 424 may be formed on the surface of the second inclined portion 422.

[0138] When the sliding movement of the second plate 420 is performed, the first coating layer 414 and the second coating layer 424 may be used as lubricants. The first coating layer 414 and the second coating layer 424 may be formed to include a fluorine component. For example, the first coating layer 414 and the second coating layer 424 may be formed by coating with a fluorine-based resin. Alternatively, the first coating layer 414 and the second coating layer 424 may be formed by coating with Teflon resin. However, the present disclosure is not limited thereto, and bearings may be installed instead of the first coating layer 414 and the second coating layer 424. Although not shown in Figure 17 , bearings may be installed between the first plate 410 and the second plate 420.

[0139] Meanwhile, it is not necessary to form both the first coating layer 414 and the second coating layer 424, and only one of the first coating layer 414 and the second coating layer 424 may be formed. Figure 17 is an exemplary view for describing the structure of a nozzle head according to a second exemplary embodiment of the present disclosure.

[0140] Reference will be made again to Figure 7 for description.

[0141] When the nozzle head 320 is installed in the substrate processing apparatus 200, a gas distribution plate (GDP) 330 may be provided on the nozzle head 320. The gas distribution plate 330 may be used to distribute a processing gas to each gas supply hole in the nozzle head 320. The gas distribution plate 330 may be formed of a corrosion-resistant metal. The gas distribution plate 330 may be formed of a plasma-resistant metal. The gas distribution plate 330 may be formed of aluminum.

[0142] When the gas distribution plate 330 is installed within the substrate processing apparatus 200, the upper plate 340 may be disposed on the gas distribution plate 330. The upper plate 340 may be located at the uppermost part within the showerhead assembly 300.

[0143] Referring Figure 18 , the upper plate 340 may include a heating plate 341 and a cooling plate 342. The cooling plate 342 may be located above the heating plate 341. Figure 18 is an exemplary view for describing the structure of the upper plate constituting the showerhead assembly according to an exemplary embodiment of the present disclosure.

[0144] The present disclosure relates to a showerhead assembly 300 using a plurality of plates on which inclined patterns are engraved. In the showerhead assembly 300, only the showerhead 320 may be replaced without disassembling the gas distribution plate 330 and the upper plate 340. The showerhead 320 may have an inclined surface with a repeating pattern. That is, the first plate 410 may include a plurality of first inclined portions 412, and the second plate 420 may include a plurality of second inclined portions 422. The showerhead 320 may prevent movement of components by having flat surfaces that contact each other after final fastening. The showerhead 320 may adjust the fastening force by adjusting the vertical length of the inclined surface. The showerhead 320 may simultaneously fasten a plurality of fastening points. The showerhead 320 may not apply a lateral external force to components directly connected thereto. The showerhead 320 may have a low friction coefficient portion coated or disposed on the friction portion.

[0145] To prevent an expansion of the range of disassembly and attachment when replacing the showerhead 320, the showerhead 320 may be replaced from the side surface of the lower plate 310 so as to be replaced without disassembling the stacked lower plate 310, gas distribution plate 330, and upper plate 340, thereby reducing manpower and performing the replacement quickly.

[0146] If an external force in the lateral direction (i.e., a direction perpendicular to the central axis of the showerhead cylinder) is applied to the showerhead or a component connected thereto, it may cause breakage of brittle materials or an imbalance in the fastening force. The showerhead assembly 300 may have structural stability because an external force is applied only in the longitudinal direction (i.e., in the direction of the central axis of the showerhead cylinder).

[0147] Since the showerhead assembly 300 is not assembled using fasteners, even if changes in thermal stress are repeatedly applied, the fastening force does not change, and thus, it is possible to prevent the fastening force from changing according to the usage time of the substrate processing apparatus 200.

[0148] The exemplary embodiments of the present disclosure have been described above with reference to the accompanying drawings. However, the present disclosure can be implemented in various different forms, and those skilled in the art to which the present disclosure pertains can understand that the present disclosure can be implemented in other specific forms without changing the technical concept or features of the present disclosure. Therefore, it should be understood that the above exemplary embodiments are illustrative rather than restrictive in all aspects.

Claims

1. A substrate processing device, comprising: a chamber housing providing a space for processing a substrate; a substrate supporting unit, disposed inside the chamber housing and supporting the substrate; A showerhead assembly is disposed inside the chamber housing and provides a processing gas; as well as a plasma generating unit that generates plasma for processing the substrate using the processing gas, Wherein, the nozzle assembly comprises: Lower plate; A nozzle is arranged on the lower plate; A gas distribution plate disposed on the showerhead; and an upper plate disposed on the gas distribution plate, and The spray head is detachable and attachable.

2. The substrate processing apparatus according to claim 1, wherein: When the showerhead is replaced, the lower plate, the gas distribution plate, and the upper plate are not separated within the substrate processing apparatus.

3. The substrate processing apparatus according to claim 1, wherein: The nozzle comprises: First Board; and The second plate is disposed on the first plate and is joined to the first plate.

4. The substrate processing apparatus according to claim 3, wherein: The first plate comprises: a first body formed along a length direction and including a groove penetrating in a direction perpendicular to the length direction; and A first inclined portion is formed on one surface of the first body.

5. The substrate processing apparatus according to claim 4, wherein: The first inclined portion has a pattern that repeats along the length direction of the first body.

6. The substrate processing apparatus according to claim 4, wherein: One side of the first body is opened and connected to the groove.

7. The substrate processing apparatus according to claim 4, wherein: The second plate comprises: a second body formed along a length direction and including a groove penetrating in a direction perpendicular to the length direction; and A second inclined portion is formed on one surface of the second body.

8. The substrate processing apparatus according to claim 7, wherein: The second inclined portion has a pattern that repeats along the length direction of the second body.

9. The substrate processing apparatus according to claim 7, wherein: One side of the second body is opened and connected to the groove.

10. The substrate processing apparatus according to claim 7, wherein: The first inclined portion and the second inclined portion are formed on surfaces contacting between the first body and the second body, respectively.

11. The substrate processing apparatus according to claim 3, wherein: The first plate and the second plate are inserted between the lower plate and the gas distribution plate while being bonded to each other.

12. The substrate processing apparatus according to claim 11, wherein: The second plate is inserted between the lower plate and the gas distribution plate, and then slides inwardly in the substrate processing apparatus.

13. The substrate processing apparatus according to claim 4, wherein: The first plate further includes a first coating layer that is formed on a surface of the first inclined portion and is lubricated.

14. The substrate processing apparatus according to claim 13, wherein: The first coating layer includes a fluorine component.

15. The substrate processing apparatus according to claim 7, wherein: The second plate further includes a second coating layer that is formed on a surface of the second inclined portion and is lubricated.

16. The substrate processing apparatus according to claim 7, wherein: The spray head further includes a bearing disposed between the first plate and the second plate.

17. The substrate processing apparatus according to claim 1, wherein: The lower plate comprises: third parties; and A plurality of studs are inserted into grooves formed on a surface of the third body and protrude from the surface of the third body.

18. The substrate processing apparatus according to claim 17, wherein: The lower plate further includes an elastic body which is inserted into the groove and disposed under or around the stud.

19. A showerhead assembly for providing a processing gas to a substrate processing apparatus, the showerhead assembly comprising: Lower plate; A nozzle is arranged on the lower plate; A gas distribution plate, disposed on the nozzle; as well as an upper plate, disposed on the gas distribution plate, Wherein, the nozzle comprises: First Board; and a second plate disposed on the first plate and joined to the first plate; The spray head is detachable and attachable, and When the showerhead is replaced, the lower plate, the gas distribution plate, and the upper plate are not separated within the substrate processing apparatus.

20. A substrate processing device comprising: a chamber housing providing a space for processing a substrate; a substrate supporting unit, disposed inside the chamber housing and supporting the substrate; A showerhead assembly is disposed inside the chamber housing and provides a processing gas; as well as a plasma generating unit for generating plasma for processing the substrate using the processing gas; Wherein, the nozzle assembly comprises: Lower plate; A nozzle is arranged on the lower plate; A gas distribution plate disposed on the showerhead; and an upper plate, disposed on the gas distribution plate, The nozzle comprises: First Board; and a second plate disposed on the first plate and joined to the first plate; The first plate and the second plate are inserted between the lower plate and the gas distribution plate while being bonded to each other, The second plate is inserted between the lower plate and the gas distribution plate and then slides inwardly in the substrate processing apparatus, and When the showerhead is replaced, the lower plate, the gas distribution plate, and the upper plate are not separated within the substrate processing apparatus.

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