Apparatus for processing substrate

Abstract

An apparatus for processing a substrate is provided. The apparatus for processing a substrate includes a processing tank having a receiving space accommodating a processing liquid and processing a plurality of substrates, and a support unit supporting the substrates in the processing tank, in which the support unit includes a support member having a first support rod, and a fixing plate having a second support rod, the first supporting rod supports the ends of the substrates in a vertical state, the fixing plate is coupled to the supporting piece and fixes the supporting piece, a plurality of first slots are formed in the first supporting rod, the edges of the substrates are inserted into the plurality of first slots, and the fixing plate is coupled to the supporting piece and fixes the supporting piece. Each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom, and a front portion and a rear portion of the first slot are open toward the receiving space, and the bottom of the first slot includes a contact protrusion, the contact protrusions protrude upward from a lower end of a first side of the first slot and support lower end portions of the substrates.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of a Korean patent application filed with the Korean Intellectual Property Office on December 29, 2023, with application number 10 - 2023 - 0196206, the entire content of which is incorporated herein by reference. Technical field

[0003] The present invention relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate by immersing the substrate in a processing liquid. Background art

[0004] To fabricate semiconductor devices, desired patterns are formed on a substrate (e.g., a wafer) through various processes such as lithography, etching, ashing, ion implantation, and thin - film deposition. Various processing liquids and processing gases are used in each of these processes, and particles and process by - products are generated during these processes. A liquid processing process is performed on the substrate before and after each process to remove the thin film, particles, and process by - products on the substrate from the substrate. Generally, the liquid processing process treats the substrate with a chemical, then removes the chemical on the substrate with a rinse solution, and then performs a drying process.

[0005] As a method of treating a substrate using a processing liquid such as a chemical and / or a rinse solution, there is a batch - type processing method of treating a plurality of substrates in a vertical posture in batches. This batch - type processing method performs substrate processing by immersing a plurality of substrates in a vertical posture in a treatment bath in which a chemical or a rinse solution is stored. The substrate is supported by a support unit having slots and is immersed in the treatment bath in this state, and the substrate is inserted into these slots. There is a problem that when processing the substrate in a treatment bath storing a chemical or a rinse solution, the chemical or the rinse solution cannot flow smoothly around the contact portion between the slot of the support unit supporting the substrate and the substrate. Therefore, treating the substrate with the chemical and cleaning the substrate with the rinse solution cannot be performed smoothly, and the substrate processing efficiency is reduced. In particular, when treating the substrate with a high - temperature chemical, the temperature difference around the contact portion between the substrate and the support unit may increase, and the temperature distribution of the substrate may become uneven. Summary of the invention

[0006] An object of the present invention is to provide an apparatus for processing a substrate that can effectively perform liquid processing on the substrate.

[0007] An object of the present invention is to provide an apparatus for processing a substrate in which a uniform temperature distribution of the substrate can be achieved when treating the substrate with a high - temperature processing liquid.

[0008] An object of the present invention is to provide an apparatus for processing a substrate, in which when the substrate is processed in a processing tank storing a processing liquid, the processing liquid can flow smoothly.

[0009] An object of the present invention is to provide an apparatus for processing a substrate, in which when the substrate is processed in a processing tank storing a processing liquid, the processing liquid can flow smoothly around the contact portion between the substrate and the support unit.

[0010] The object of the present invention is not limited thereto, and other objects not mentioned herein will be clearly understood by those of ordinary skill in the art from the following description.

[0011] The present invention provides an apparatus for processing a substrate. The apparatus for processing the substrate includes a processing tank and a support unit. The processing tank has a receiving space for accommodating a processing liquid and processes a plurality of substrates. The support unit supports the substrates in the processing tank. Wherein, the support unit includes a support member and a fixing plate. The support member has a first support rod that supports the ends of the substrates in a vertical state. The fixing plate is coupled to the support member and fixes the support member. A plurality of first slots are formed at the first support rod, and the edges of the substrates are inserted into the plurality of first slots. Each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom. The front and rear portions of the first slot can be open toward the receiving space, and the bottom of the first slot includes contact protrusions that protrude upward from the lower end of the first side of the first slot and support the lower end portions of the substrates.

[0012] In one embodiment, the first side and the second side of the first slot can be arranged such that the distance between the first side and the second side decreases downward.

[0013] In one embodiment, the first side and the second side can be inclined.

[0014] In one embodiment, each of the first side and the second side of the first slot can have a first region, a second region, and a third region. The first region extends upward from the bottom, the second region extends upward from the first region, and the third region extends upward from the second region. The first region of the first side and the first region of the second side can be arranged opposite to each other. The second region of the first side and the second region of the second side can be arranged opposite to each other. The third region of the first side and the third region of the second side can be arranged opposite to each other. The second region of the first side and the second region of the second side can be inclined surfaces, and the distance between the second region of the first side and the second region of the second side can be smaller than the distance between the third region of the first side and the third region of the second side.

[0015] In one embodiment, both the first side and the second side of the first slot can be configured such that the width of the surface increases downward.

[0016] In one embodiment, the contact protrusion can have a top, a first side, and a second side. The top of the contact protrusion can be a flat surface, and when the first support rod supports the substrate, the top of the contact protrusion can support the lower end of the substrate.

[0017] In one embodiment, both sides of the contact protrusion can be inclined.

[0018] In one embodiment, the top of the contact protrusion can be set at the same height as the upper end of the first region of the first side of the first slot.

[0019] In one embodiment, the width of the top of the contact protrusion in the direction parallel to the arrangement direction of the first slot can be the same as the thickness of the substrate.

[0020] In one embodiment, the support member can further include a second support rod that supports the ends of the substrates in a vertical state, and a plurality of second slots can be formed at the second support rod, and the edges of the substrates are inserted into the plurality of second slots.

[0021] In one embodiment, the second support rod can include a top, a first side, and a second side. The top of the second support rod includes a first height portion and a second height portion lower than the first height portion. The second slot is formed at the first height portion, and the second slot can be formed at a position higher than the second height portion.

[0022] In one embodiment, when viewed from above, the distance from the center of the substrate to the second support rod can be greater than the distance from the center of the substrate to the first support rod.

[0023] In one embodiment, the device can further include a transfer robot coupled to the upper end of the fixing plate. Wherein, the transfer robot can immerse the support unit and the substrate supported on the support unit into the processing liquid or unload the substrate from the processing liquid by moving the support unit up or down.

[0024] In addition, the present invention provides an apparatus for processing a substrate. In one embodiment, the apparatus for processing the substrate includes a processing tank and a support unit. The processing tank has a receiving space for accommodating a processing liquid and processes a plurality of substrates. The support unit supports the substrates in the processing tank. Wherein, the support unit includes a support member and a fixing plate. The support member has a first support rod and a second support rod. The first support rod and the second support rod support the ends of the substrates in a vertical state. The fixing plate is coupled to the support member and fixes the support member. A plurality of first slots are formed at the first support rod, and the edges of the substrates are inserted into the plurality of first slots. A plurality of second slots are formed at the second support rod, and the edges of the substrates are inserted into the plurality of second slots. The second support rod includes a top, a first side, and a second side. The top of the second support rod includes a first height portion and a second height portion lower than the first height portion. The second slots are formed at the first height portion, and the second slots can be formed at a position higher than the second height portion.

[0025] In one embodiment, each of the plurality of first slots can be defined by a first side, a second side facing the first side, and a bottom. The front and rear portions of the first slot can be open toward the receiving space, and the bottom of the first slot can include contact protrusions that protrude upward from the lower end of the first side of the first slot and support the lower end portions of the substrates.

[0026] In one embodiment, the first side and the second side of the first slot can be inclined such that the distance between the first side and the second side decreases downward.

[0027] In one embodiment, the first side and the second side of the first slot can each have a first region, a second region, and a third region. The first region extends upward from the bottom, the second region extends upward from the first region, and the third region extends upward from the second region. The first regions of the first side and the second side can be disposed opposite to each other. The second regions of the first side and the second side can be disposed opposite to each other. The third regions of the first side and the second side can be disposed opposite to each other. The second regions of the first side and the second side can be inclined surfaces, and the distance between the second regions of the first side and the second side can be less than the distance between the third regions of the first side and the second side.

[0028] In one embodiment, the contact protrusion can have a top and a side surface. The top of the contact protrusion can be a flat surface, and when the first support rod supports the substrate, the top of the contact protrusion can support the lower end portion of the substrate.

[0029] In one embodiment, the top of the contact protrusion may be disposed at the same height as the upper end of the first region of the first side of the first slot.

[0030] In addition, the present invention provides an apparatus for processing a substrate. In one embodiment, the apparatus for processing a substrate includes a processing tank and a support unit. The processing tank has a receiving space for containing a processing liquid and processes a plurality of substrates, and the support unit supports the substrates in the processing tank.

[0031] Wherein, the support unit includes a support member, a fixing plate, and a transfer robot. The support member has a first support rod and a second support rod. The first support rod and the second support rod support the ends of the substrates in a vertical state. The fixing plate is coupled to the support member and fixes the support member. The transfer robot is coupled to the upper end of the fixing plate. A plurality of first slots are formed at the first support rod, and the edges of the substrates are inserted into the plurality of first slots. A plurality of second slots are formed at the second support rod, and the edges of the substrates are inserted into the plurality of second slots. Each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom. The front and rear portions of the first slot may be open toward the receiving space. The bottom of the first slot includes contact protrusions that protrude upward from the lower end of the first side of the first slot and support the lower end portions of the substrates. The second support rod includes a top, a first side, and a second side. The top of the second support rod includes a first height portion and a second height portion lower than the first height portion. The second slot is formed at the first height portion. The second slot is formed at a position higher than the second height portion. And when viewed from above, the distance from the center of the substrate to the second support rod is greater than the distance from the center of the substrate to the first support rod.

[0032] According to one embodiment, the substrate can be effectively liquid-processed.

[0033] In addition, according to an embodiment of the present invention, when the substrate is processed with a high-temperature processing liquid, the temperature distribution of the substrate can be made uniform.

[0034] In addition, according to an embodiment of the present invention, when the substrate is processed in a processing tank storing a processing liquid, the processing liquid can flow smoothly.

[0035] In addition, according to an embodiment of the present invention, when the substrate is processed in a processing tank storing a processing liquid, the processing liquid can flow smoothly around the contact portion between the substrate and the support unit.

[0036] The effects of the present invention are not limited to the above effects, and those skilled in the art will clearly understand the effects not mentioned from the specification and the drawings. Description of the Drawings

[0037] Figure 1 FIG. 1 is a schematic view of an apparatus for processing a substrate according to an embodiment of the present invention as seen from above.

[0038] Figure 2 FIG. 2 schematically shows Figure 1 the structure of a second chemical liquid tank.

[0039] Figure 3 FIG. 3 shows Figure 2 an embodiment of a support unit.

[0040] Figure 4 FIG. 4 is Figure 3 a detailed enlarged view of a first support rod.

[0041] Figure 5 FIG. 5 shows Figure 3 a detailed view of the first support rod in a direction perpendicular to the longitudinal direction of the first support rod.

[0042] Figure 6 FIG. 6 shows Figure 3 a cross-sectional view of the first support rod in a direction parallel to the longitudinal direction of the first support rod.

[0043] Figure 7 FIG. 7 shows Figure 3 a detailed view of the appearance of inserting a substrate into a first slot of the first support rod.

[0044] Figure 8 FIG. 8 shows

[0045] Figure 9 another embodiment of contact protrusions formed on the bottom of the first slot. Figure 3 FIG. 9 shows

[0046] Figure 10 FIG. 10 shows Figure 1 a second chemical liquid tank in which a support unit according to another embodiment of the present invention is installed.

[0047] The various features and advantages of the non-limiting exemplary embodiments of this specification may become apparent upon reviewing the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless explicitly stated, the drawings are not considered to be drawn to scale. For clarity, various dimensions in the figures may be exaggerated. Detailed Description

[0048] Example embodiments will now be described more fully with reference to the accompanying drawings. The example embodiments are provided so that this disclosure will be thorough, and will fully convey the scope to those skilled in the art. Numerous specific details are set forth (such as examples of specific components, devices, and methods) to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to those skilled in the art that: specific details need not be employed, and that the example embodiments may be embodied in many different forms and that the specific details should not be construed as limiting the scope of the present disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies have not been described in detail.

[0049] The terms used herein are for the purpose of describing particular example embodiments only and are not intended to be limiting. As used herein, unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" may be intended to also include the plural forms. The terms "comprises", "comprising", "including", and "having" are inclusive and therefore specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein should not be construed as necessarily being performed in the particular order discussed or illustrated, unless explicitly identified as an order of performance. It should also be understood that additional or alternative steps may be employed.

[0050] When an element or layer is referred to as being "on", "engaged to", "connected to", or "coupled to" another element or layer, it can be directly on, engaged directly to, connected directly to, or coupled directly to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on", "directly engaged to", "directly connected to", or "directly coupled to" another element or layer, there may be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., "between" relative to "directly between", "adjacent" relative to "directly adjacent", etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0051] Although the terms first, second, third, etc. may be used herein to describe different elements, components, regions, layers, and / or sections, these elements, components, regions, layers, or sections should not be limited by these terms unless otherwise specified. These terms may be used only to distinguish one element, component, region, layer, or section from another. When used herein, terms such as "first," "second," and other numerical terms do not imply an order or sequence unless the context clearly dictates. Thus, a first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section without departing from the teachings of the example embodiments.

[0052] For ease of description, spatial relative terms such as "inner," "outer," "below," "beneath," "under," "above," "over," etc. may be used herein to describe the relationship of one element or feature to another element(s) or feature(s), as illustrated. Spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as "below" or "beneath" another element or feature will then be oriented "above" the other element or feature. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatial relative descriptors used herein are to be interpreted accordingly.

[0053] When the terms "same" or "identical" are used in the description of the example embodiments, it should be understood that there may be some imprecision. Thus, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as other elements or values within the manufacturing or operating tolerance range (e.g., ±10%).

[0054] When the terms "about" or "substantially" are used in conjunction with a numerical value, it should be understood that the associated numerical value includes the manufacturing or operating tolerance around the stated value (e.g., ±10%). Additionally, when the words "generally" and "substantially" are used in association with a geometry, it should be understood that exactness of the geometry is not required, but the latitude of the shape is within the scope of the present disclosure.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should also be understood that terms (including those defined in common dictionaries) should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0056] In addition, components for transporting the substrate W (e.g., a transport unit or a transport robot) described below may be referred to as a transport module.

[0057] Hereinafter, reference Figures 1 to 10 is made to describe embodiments of the present invention.

[0058] Figure 1 is a schematic view of a device for processing a substrate according to an embodiment of the present invention as seen from above.

[0059] Reference Figure 1 , the device 10 for processing a substrate may include a first process execution unit 100, a second process execution unit 200, and a control unit 600. When viewed from above, the first process execution unit 100 and the second process execution unit 200 may be arranged in a line. Hereinafter, the direction in which the first process execution unit 100 and the second process execution unit 200 are arranged will be referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above will be referred to as the second direction Y, and the direction perpendicular to the first direction X and the second direction Y will be referred to as the third direction Z.

[0060] The first process execution unit 100 may perform liquid processing on a plurality of substrates W in a batch at one time. For example, the liquid processing may be a cleaning process for removing unnecessary films or particles on the substrate W. The first process execution unit 100 may process a plurality of substrates W simultaneously, where the patterned surface of the substrate W is in a direction perpendicular to the ground.

[0061] The first process processing unit 100 may include a first loading port unit 110, an indexing chamber 120, a transport unit 130, a liquid processing chamber, and an attitude changing unit 150.

[0062] The first load port unit 110 may include at least one or more load ports. A transport container F may be placed in the load ports of the first load port unit 110, and a substrate W is accommodated in the transport container F. A plurality of substrates W may be accommodated in the transport container F. For example, 25 substrates W may be accommodated in the transport container F. The transport container F may be a cassette, FOD, or FOUP. The transport container F may be loaded into the first load port unit 110 by a container transfer device. The substrate W accommodated in the transport container F placed in the first load port unit 110 may be an unprocessed substrate W. For example, the unprocessed substrate W may be a substrate W that has not yet been processed or a substrate W that has been partially processed but requires liquid processing.

[0063] In addition, the container F in which the unprocessed substrate W is accommodated may be placed in the first load port unit 110. That is, the first load port unit 110 may be used to load the substrate W that needs to be processed.

[0064] The first load port unit 110 may be coupled to the indexing chamber 120. The indexing chamber 120 and the first load port unit 110 may be arranged in the second direction Y. The first indexing chamber 120 may include an indexing robot 122 and an attitude change unit 124. The indexing robot 122 may unload the substrate W that has not yet been processed or needs to be processed from the container F placed in the first load port unit 110. The first transfer robot 122 may unload the substrate W from the container F and load the substrate W into the receiving container C provided in the first indexing chamber 120. The first transfer robot 122 may have a batch hand that can hold and transfer multiple substrates W (e.g., 25 substrates) simultaneously.

[0065] The receiving container C may have an overall box shape. The receiving container C may have a receiving space therein. A plurality of substrates W may be accommodated in the receiving space of the receiving container C. For example, 50 substrates W may be accommodated in the receiving space of the receiving container C. The receiving container C may have a box shape in which at least two or more of its surfaces are open. A support member for supporting / holding the substrate W may be provided in the receiving space of the receiving container C.

[0066] When the substrate W unloaded from the transport container F is completely loaded into the accommodation container C, the substrate W can be transferred to the attitude change unit 124 provided in the indexing chamber 120 by a transfer member (not shown). The attitude change unit 124 can rotate the accommodation container C. For example, the attitude change unit 124 can rotate the accommodation container C so that the open part of the accommodation container C faces upward. When the accommodation container C is rotated so that the open part faces upward, the attitude of the substrate W accommodated in the accommodation container C can be changed from a horizontal attitude to a vertical attitude. The horizontal attitude can mean that the upper surface of the substrate W (for example, the surface on which a pattern is formed) is parallel to the X-Y plane (i.e., the ground), and the vertical position can mean that the upper surface of the substrate W is parallel to the X-Z plane or the Y-Z plane (i.e., the surface perpendicular to the ground).

[0067] The transfer unit 130 can include a first transfer unit 132 and a second transfer unit 134. The first transfer unit 132 transfers the substrate W between the indexing chamber 120 and the batch processing unit 140, and the second transfer unit 134 transfers the substrate W between the batch processing unit 140 and the attitude change unit 150 described below.

[0068] The first transfer unit 132 can include a track and a hand. The track extends along the first direction X, and the hand is configured to be able to transfer a plurality of substrates W at a time. The first transfer unit 132 can hold the substrate W whose attitude has been changed in the attitude change unit 124 and transfer the held substrate W to the liquid processing chamber. For example, the first transfer unit 132 can transfer the substrate W whose attitude has been changed at the attitude change unit 124 to any one of the processing tanks 141a to 143b of the batch processing unit 140. The second transfer unit 134 can include a track and a hand. The track extends along the first direction X, and the hand is configured to be able to transfer a plurality of substrates W at a time.

[0069] The second transfer unit 134 can be configured to be able to transfer the substrate W between the first batch processing unit 141, the second batch processing unit 142 and the third batch processing unit 143 of the batch processing unit 140 described below. In addition, the second transfer unit 134 can be configured to be able to transfer the substrate W between the batch processing unit 140 and the attitude change unit 150.

[0070] The liquid processing chamber performs liquid processing on the substrate W by supplying a processing liquid to the substrate W.

[0071] According to one example, the liquid processing chamber is configured as a batch processing unit 140 that performs liquid processing on a plurality of substrates W at a time. A processing liquid can be used in the batch processing unit 140 to perform liquid processing on a plurality of substrates W at a time. The processing liquid used in the batch processing unit 140 can be a chemical and / or a rinsing solution. For example, the chemical can be a chemical having strong acid or strong base properties. For example, the chemical can be appropriately selected from an ammonia-hydrogen peroxide mixture (APM), a hydrochloric acid-hydrogen peroxide mixture (HPM), a hydrofluoric acid-hydrogen peroxide mixture (FPM), a diluted hydrofluoric acid (DHF), a diluted sulfuric acid peroxide (DSP), a chemical for removing SiN, a chemical containing phosphoric acid, or a chemical containing sulfuric acid, etc. The rinsing solution can be water. For example, the rinsing solution can be pure water.

[0072] The batch processing unit 140 can include a first batch processing unit 141, a second batch processing unit 142, and a third batch processing unit 143.

[0073] The first batch processing unit 141, the second batch processing unit 142, and the third batch processing unit 143 each include a chemical liquid tank, a rinsing tank, and a batch transfer unit for transferring the substrate W therebetween.

[0074] In each batch processing unit, the substrate W is processed with a first processing liquid in the chemical liquid tank and then processed with a second processing liquid in the rinsing tank. The first processing liquid can be a chemical, and the second processing liquid can be a rinsing solution.

[0075] When viewed from above, the substrate W whose attitude has been changed by the attitude changing unit 124 and is accommodated in the accommodation container C, and the substrate W accommodated in the batch processing tank of the batch processing unit 140 can be arranged in parallel in the second direction Y.

[0076] In addition, when viewed from above, the substrate W accommodated in the batch processing tanks 141a to 143b of the batch processing unit 140 and the substrate W accommodated in the attitude changing tank 151 of the attitude changing unit 150 can be arranged in parallel in the second direction Y.

[0077] The first batch processing unit 141 can include a first chemical liquid tank 141a, a first rinsing tank 141b, and a first batch transfer unit 141c.

[0078] Multiple substrates W can be simultaneously subjected to liquid processing with a chemical (e.g., DHF) in the first chemical liquid tank 141a. Multiple substrates W can be simultaneously subjected to liquid processing with a rinsing solution in the first rinsing tank 141b. However, the present invention is not limited thereto, and the processing liquid used in the first chemical liquid tank 141a can be variably changed to a processing liquid selected from the above-described processing liquids.

[0079] A thin film on the substrate W, a residual film material on the substrate W, or foreign matter on the substrate W, etc. can be removed in the first chemical liquid tank 141a. Multiple substrates W can be simultaneously processed with a rinsing solution (e.g., pure water) in the first rinsing tank 141b. The chemical remaining on the substrate W after processing the substrate W in the first chemical liquid tank 141a is removed from the substrate W in the first rinsing tank 141b.

[0080] The first batch transfer unit 141c can be configured to be capable of transferring the substrate W between the first chemical liquid tank 141a and the first rinsing tank 141b.

[0081] The second batch processing unit 142 can include a second chemical liquid tank 142a, a second rinsing tank 142b, and a second batch transfer unit 142c.

[0082] Multiple substrates W can be simultaneously subjected to liquid processing with a chemical containing phosphoric acid in the second chemical liquid tank 142a. Multiple substrates W can be simultaneously processed with a rinsing solution in the second rinsing tank 142b. However, the present invention is not limited thereto, and the processing liquid used in the second chemical liquid tank 142a can be variably changed to a processing liquid selected from the above-described processing liquids.

[0083] The second batch transfer unit 142c can be configured to be capable of transferring the substrate W between the second chemical liquid tank 142a and the second rinsing tank 142b.

[0084] The third batch processing unit 143 can include a third chemical liquid tank 143a, a third rinsing tank 143b, and a third batch transfer unit 143c.

[0085] Multiple substrates W can be simultaneously subjected to liquid processing with a chemical containing phosphoric acid in the third chemical liquid tank 143a. Multiple substrates W can be simultaneously processed with a rinsing solution in the third rinsing tank 143b. However, the present invention is not limited thereto, and the processing liquid used in the third chemical liquid tank 143a can be variably changed to a processing liquid selected from the above-described processing liquids.

[0086] The third batch transfer unit 143c can be configured to be capable of transferring the substrate W between the third chemical liquid tank 143a and the third rinsing tank 143b.

[0087] According to one embodiment, the second batch processing unit 142 and the third batch processing unit 143 may process the substrate W with the same chemical, and the first batch processing unit 141 may process the substrate W with a chemical different from that used by the second batch processing unit 142 or the third batch processing unit 143. Hereinafter, it is exemplarily described that the second batch processing unit 142 and the third batch processing unit 143 process the substrate W with a phosphoric acid solution, and the first batch processing unit 141 processes the substrate W with any one of the chemicals exemplified above.

[0088] Figure 1 It is shown in the figure that the batch processing unit 140 includes a first batch processing unit 141, a second batch processing unit 142, and a third batch processing unit 143, but the present invention is not limited thereto.

[0089] For example, additional batch processing units may also be provided. The additional batch processing units may process the substrate W with the same or different chemicals as those used by the first batch processing unit 141, the second batch processing unit 142, or the third batch processing unit 143.

[0090] Optionally, the batch processing unit 140 may include only the second batch processing unit 142 and the third batch processing unit 143, without including the first batch processing unit 141.

[0091] Optionally, the batch processing unit 140 may include only the second batch processing unit 142.

[0092] Hereinafter, the structure of the batch processing unit 140 is described.

[0093] The first batch processing unit 141, the second batch processing unit 142, and the third batch processing unit 143 are provided with the same or similar structures. The second batch processing unit 142 is described in detail below.

[0094] The second batch processing unit 142 may include a second chemical liquid tank 142a, a second rinsing tank 142b, and a second batch transfer unit 142c.

[0095] Figure 2 is schematically shown Figure 1 a view of the structure of the second chemical liquid tank.

[0096] The second chemical liquid tank 142a has a circulation pipeline 330, a heating unit 340, and a support unit 400.

[0097] The processing tank 310 may have an inner tank 312 and an outer tank 314. The inner tank 312 has a receiving space 316 therein. The inner tank 312 may have a box shape with an open top. For example, the inner tank 312 may have a rectangular prism shape. The processing liquid may be accommodated in the receiving space 316. The processing liquid may be a phosphoric acid solution.

[0098] The outer tank 314 is arranged to surround the inner tank 312 on the outside of the inner tank 312. For example, the outer tank 314 has a rectangular prism shape similar to that of the inner tank 312. The outer tank 314 is sized to be larger than the inner tank 312. The outer tank 314 accommodates the processing liquid that overflows from the inner tank 312. A discharge hole 338 for discharging the processing liquid is formed in the outer tank 314. The discharge hole 338 is formed through the bottom of the outer tank 314. The processing liquid that overflows from the inner tank 312 to the outer tank 314 is discharged through the discharge hole 338 to a circulation pipeline 330 described below.

[0099] The circulation pipeline 330 circulates the processing liquid in the processing tank 310. The circulation pipeline 330 performs a series of processing liquid circulation processes of supplying the processing liquid to the processing tank 310, filtering the processing liquid discharged from the processing tank 310, and re-supplying or discharging the processing liquid.

[0100] A liquid supply pipe 331, a pump 332, a filter 333, a valve 335, and a heater 337 are installed in the circulation pipeline 330. The pump 332 provides dynamic pressure to the processing liquid so that the processing liquid circulates along the circulation pipeline 330.

[0101] The liquid supply pipe 331 supplies the processing liquid to the processing tank 310. A part of the liquid supply pipe 331 is arranged in the processing tank 310. A part of the liquid supply pipe 331 is arranged at the lower part of the receiving space 316 of the inner tank 312.

[0102] A plurality of liquid supply pipes 331 may be provided. In this case, the liquid supply pipes 331 may be arranged parallel to each other. The liquid supply pipes 331 are positioned at a lower position than the substrate W processed in the receiving space 316. The liquid supply pipes 331 may be positioned at a lower position than the support unit 400.

[0103] The filter 333 removes foreign substances in the processing liquid circulating in the circulation pipeline 330.

[0104] The valve 335 opens and closes the circulation pipeline 330. When the valve 335 is open, the processing liquid in the processing tank 310 continuously circulates along the circulation pipeline 330.

[0105] The heater 337 can heat the processing liquid supplied to the processing tank 310 to a set temperature.

[0106] The heating unit 340 can heat the processing liquid contained in the receiving space 316. The heating unit 340 can be provided on one side of the inner tank 312. The heating unit 340 can be embedded in the wall of the inner tank 312, or can be provided in a housing (not shown) of the processing tank 310.

[0107] The support unit 400 can support the substrate M. The support unit 400 can support the substrate W in the receiving space 316. The support unit 400 can be configured to be able to support a plurality of substrates W. For example, the support unit 400 can be configured to be able to support 50 substrates W. The support unit 400 can be a lifter that is coupled to a second batch transfer unit 142c described below and is configured to be able to transfer the substrate W between the second chemical liquid tank 142a and the second rinse tank 142b. The support unit 400 is described below.

[0108] The second rinse tank 142b can have a structure similar to that of the second chemical liquid tank 142a. For example, the second rinse tank 142b also includes a processing tank 310 having a receiving space 316, and the processing liquid can be contained in the receiving space 316. The processing liquid can be a rinsing solution.

[0109] Different from the second chemical liquid tank 142a, the second rinse tank 142b includes a processing tank 310 having a receiving space 316 and can be composed only of the inner tank 312 without including the outer tank 314.

[0110] The second batch transfer unit 142c can be configured to be able to transfer the substrate W between the second chemical liquid tank 142a and the second rinse tank 142b. The second batch transfer unit 142c can be configured to be able to transfer the support unit 400 described below between the second chemical liquid tank 142a and the second rinse tank 142b.

[0111] Hereinafter, with reference to Figures 3 to 9 description Figure 2 of the embodiments of the support unit.

[0112] Figure 3 is a perspective view showing Figure 2 the embodiments of the support unit.

[0113] With reference to Figure 3 , the support unit 400 includes a fixing plate 410 and a support member 420.

[0114] The fixing plate 410 is coupled to the support member 420 and fixes the support member 420.

[0115] The support member 420 supports the substrate W. The support member 420 can include a plurality of support rods so as to be able to stably support the substrate W.

[0116] Figure 3 The support 420 of the support unit 400 shown in Figure 3 may include a first support rod 430 and a second support rod 450. The second support rod 450 may be disposed outside the first support rod 430. The first support rod 430 may be arranged such that when the support unit 400 supports the substrate W, the first support rod can support the center of the lower part of the end of the substrate W (i.e., the lower end of the substrate W). Two second support rods 450 may be respectively disposed on both sides of the first support rod 430. When the substrate W is supported on the support unit 400, when viewed from above, the distance from the center of the substrate W to the second support rod 450 may be greater than the distance from the center of the substrate W to the first support rod 430.

[0117] Both the first support rod 430 and the second support rod 450 have a rod shape. The two second support rods 450 are arranged to be separated from each other at the same height.

[0118] The first support rod 430 and the second support rod 450 support the end of the substrate W. Hereinafter, the end of the substrate W includes the side end and the lower end of the substrate W that are vertically erected, and the area between the side end and the lower end.

[0119] In the longitudinal direction of the first support rod 430 and the second support rod 450, a plurality of slots are formed at the upper end of each of the first support rod 430 and the second support rod 450, and there is a predetermined gap between the plurality of slots. A plurality of first slots 440 are formed at the upper end of the first support rod 430, and the edge of the substrate W is inserted into the plurality of first slots. A plurality of second slots 460 are formed at the upper end of the second support rod 450, and the edge of the substrate W is inserted into the plurality of second slots. The first slots 440 and the second slots 460 are formed in a number corresponding to the number of substrates W. For example, twenty-five or fifty first slots 440 and second slots 460 may be formed.

[0120] The fixing plate 410 fixes the first support rod 430 and the second support rod 450 of the support 420. Two fixing plates 410 are disposed at both ends of the support 420. The first end of the first support rod 430 and the first end of the second support rod 450 are coupled to the first fixing plate 410a. The second end of the first support rod 430 and the second end of the second support rod 450 are coupled to the second fixing plate 410b.

[0121] The first fixing plate 410a may be configured to be able to transfer the substrate W between the second chemical liquid tank 142a and the second rinsing tank 142b by being coupled to the second batch transfer unit 142c described below.

[0122] Figure 4 is Figure 3 a detailed enlarged view of the first support rod of Figure 5 is a view showing Figure 3Detailed view of the first support rod in a direction perpendicular to the longitudinal direction of the first support rod, and Figure 6 shows Figure 3 Cross-sectional view of the first support rod in a direction parallel to the longitudinal direction of the first support rod. Figure 7 shows inserting the substrate into Figure 3 Detailed view of the appearance of the first support rod in the first slot of the first support rod.

[0123] Hereinafter, with reference to Figures 3 to 7 The first support rod 430 and the first slot 440 are described in detail.

[0124] The first support rod 430 includes a top 431 and sides 433. The distance between the two sides 433 of the first support rod 430 is defined as the thickness of the first support rod 430. The thickness of the first support rod 430 can decrease upward. For example, when the sides of the first support rod 430 approach the top 431, the sides 433 of the first support rod 430 may become thinner. The sides 433 of the first support rod 430 can be inclined.

[0125] The top 431 of the first support rod 430 can be flat. The top 431 of the first support rod 430 can be rectangular.

[0126] As described above, the first support rod 430 has a plurality of first slots 440 spaced apart from each other in the longitudinal direction of the first support rod 430. The first slot 440 is defined by a first side 441, a second side 443, and a bottom 445. That is, the first slot 440 can be defined as the space between the first side 441, the second side 443, and the bottom 445 on the first support rod 430. The front and rear of the first slot 440, that is, the direction of the sides 433 of the first support rod 430, opens toward the receiving space 316.

[0127] The distance between the first side 441 and the second side 443 can decrease downward. Therefore, the width of the first slot 440 can decrease downward. Both the first side 441 and the second side 443 can be inclined. In some areas, the first side 441 and the second side 443 can each be inclined perpendicular to the bottom 445.

[0128] As Figure 5As shown, the first side 441 and the second side 443 can each be divided into multiple regions. For example, the first side 441 can have a first region 441a that contacts the bottom 445 and extends from the bottom 445, a second region 441b that is connected to the first region 441a and extends upward from the first region 441a, and a third region 441c that is connected to the second region 441b and extends upward from the second region 441b. In addition, the second side 443 can have a first region 443a that contacts the bottom, a second region 443b that is connected to the first region 443a and is disposed above the first region 443a, and a third region 443c that is connected to the second region 443b and is disposed above the second region 443b.

[0129] The first regions 441a and 443a to the third regions 441c and 443c of the first side 441 and the second side 443 can all be inclined. Alternatively, the first regions 441a and 443a to the second regions 441b and 443b of the first side 441 and the second side 443 can all be inclined, and the third regions 441c and 443c can be perpendicular to the bottom 445. The inclinations of the first regions 441a and 443a to the third regions 441c and 443c of the first side 441 and the second side 443 can be different from each other.

[0130] The bottom 445 is a flat surface. A contact protrusion 447 that protrudes upward is formed on the bottom 445.

[0131] As Figure 6 shown, the contact protrusion 447 has a top 447a and a side 447b.

[0132] The top 447a can be a flat surface. Figure 6 The top 447a shown in [reference] can be parallel to the bottom 445 of the first slot 440. When the substrate W is inserted into the first slot 440, the top 447a supports the end of the substrate W. The top 447a can support the lower end of the substrate W. The top 447a can be positioned at the same height as the boundary between the first regions 441a, 443a and the second regions 441b, 443b of the first side 441 described above or the second side 443 of the first slot 440. That is, the top 447a of the contact protrusion 447 can be positioned at the same height as the upper end of the first regions 441a, 443a of the first side 441 or the second side 443.

[0133] The width of the top 447a in the direction same as the arrangement direction of the slot 440 can be the same as the thickness of the substrate W. Therefore, when the substrate W is inserted into the first slot 440, the top 447a can stably support the end of the substrate W.

[0134] The side surfaces 447b of the contact protrusions 447 are inclined such that the distance between the side surfaces 447b increases downward. Thus, as Figure 7 shown, when the substrate W is inserted into the first slot 440, the top 447a of the contact protrusion 447 supports the end of the substrate W, and a predetermined space is formed between the substrate W, the side surfaces 447b of the support protrusions 447, and the first regions 441a and 443a of the first side 441 and the second side 443. This predetermined space is defined as the first flow space 449.

[0135] When the substrate W is inserted into the first slot 440 of the first support bar 430 and supported by the support unit 400, the first flow space 449 is positioned below the support surface that supports the end of the substrate W and contacts the end of the substrate W, that is, the top 447a of the contact protrusion 447. When the processing liquid flows through the first flow space 449, when the substrate W is processed in the second chemical liquid tank 142a, the processing liquid (e.g., chemicals) can flow smoothly around the contact portion between the substrate W and the first slot 440.

[0136] Since the substrate W is supported by the top 447a of the contact protrusion 447 and the processing liquid flows into the first flow space 449 formed around the top 447a, there is an effect of increasing the contact surface between the processing liquid and the substrate W. In particular, when the substrate is processed with high-temperature chemicals, as the processing liquid flows into the first flow space 449, the temperature difference around the contact portion between the substrate and the support unit can be minimized, and the temperature distribution of the substrate can be made uniform.

[0137] Figure 8 is a view showing another embodiment of the contact protrusion formed on the bottom of the first slot. As Figure 8 shown, the contact protrusion 447 may protrude from a partial area of the bottom 445 of the first slot 440. The first flow space 449 may be formed between the substrate W, the side surfaces 447b of the support protrusion 447, the first regions 441a and 443a of the first side 441 and the second side 443, and the bottom 445.

[0138] Figure 9 is a view showing Figure 3 a detailed view of the second support bar along a direction parallel to the longitudinal direction of the second support bar.

[0139] Hereinafter, the second support bar 450 and the second slot 460 will be described in detail with reference to Figure 3 and Figure 9 The second support bar 450 includes a top 452, an outer side 453, and an inner side 455.

[0140] The second support bar 450 includes a top 452, an outer side 453, and an inner side 455.

[0141] The top 452 may be composed of a first height portion 452a and a second height portion 452b. The first height portion 452a may be formed near the outer side 453 of the second support rod 450, and the second height portion 452b may be formed near the inner side 455 of the second support rod 450. As Figure 9 shown, both the first height portion 452a and the second height portion 452b may be inclined. The first height portion 452a may be inclined to rise towards the inner side, and the second height portion 452b may be inclined to rise towards the outer side.

[0142] The inner side 455 includes a first inner side 455a extending upward from the upper end of the second height portion 452a and a second inner side 455b extending downward from the lower end of the second height portion 452a. Both the first inner side 455a and the second inner side 455b are perpendicular to the ground.

[0143] The distance between the outer side 453 and the inner side 455 of the second support rod 450 is defined as the thickness of the second support rod 450. The second support rod 450 has the same thickness at a portion below the second height portion 452b, but has a thickness at a portion above the second height portion 452b that is less than the thickness at the portion below the second height portion 452b. For example, as Figure 9 shown, when the side surface of the first support rod 430 approaches the top 431, the side surface 433 of the first support rod 430 may become thinner. That is, the thickness of the second support rod 450 at the point where the first inner side 455a is formed is less than the thickness of the second support rod 450 at the point where the inner side 455b is formed.

[0144] The second slot 46 formed in the second support rod 450 may be formed at a position below the first height portion 452a. The second slot 460 may be formed between the first inner side 455a and the outer side 453. The front and rear portions of the second slot 460, that is, the directions of the first inner side 455a and the outer side 453 of the second support rod 450, are open towards the receiving space 316. The second slot 460 may be formed in a shape capable of supporting the substrate W.

[0145] The second slot 460 is formed at a position above the second height portion 452b. That is, the lower end portion of the second slot 460 is positioned higher than the upper end of the second height portion 452b. Therefore, as Figure 9 shown, when the substrate W is inserted into the second slot 460, the second height portion 452b is separated from the substrate W, and a predetermined space is formed between the substrate W, the first inner side 455a, and the second height portion 452b. This predetermined space is defined as the second flow space 457.

[0146] When the substrate W is inserted into the second slot 460 of the second support rod 460 and supported by the support unit 400, the second flow space 457 is positioned below the support surface supporting the end of the substrate W and contacts the end of the substrate W. When the processing liquid flows through the second flow space 457, when the substrate W is processed in the second chemical liquid tank 142a, the processing liquid (e.g., chemical) can flow smoothly around the contact portion between the substrate W and the second slot 460.

[0147] Since the substrate W is supported by the second slot 460 formed between the outer side 453 and the first inner side 455a of the second support rod 450 and the processing liquid flows into the second flow space 457, the upper part of the second height portion 452b does not contact the substrate W, so that there is an effect of increasing the contact area between the processing liquid and the substrate W. In particular, when the substrate is processed with high-temperature chemicals, as the processing liquid flows into the second flow space 457, the temperature difference around the contact portion between the substrate and the support unit can be minimized, and the temperature distribution of the substrate can be made uniform.

[0148] Hereinafter, refer to Figure 1 and Figure 2 Describe an embodiment of a method for processing Figure 1 the substrate W in the second batch processing unit.

[0149] The second batch transfer unit 142c coupled to the support unit 400 supporting the substrate W transfers the substrate W to the second chemical liquid tank 142a.

[0150] The substrate W is loaded into the second chemical liquid tank 142a filled with a phosphoric acid solution and immersed in the phosphoric acid solution in the inner tank 312 of the second chemical liquid tank 142a. The phosphoric acid solution is accommodated in the second chemical liquid tank 142a in a heated state.

[0151] The phosphoric acid solution in the second chemical liquid tank 142a is circulated through the circulation pipeline 330, thereby processing the substrate W with the phosphoric acid solution.

[0152] The phosphoric acid solution supplied from the inner tank 312 through the liquid supply pipe 331 flows upward in the receiving space 316 and then overflows into the outer tank 314.

[0153] The phosphoric acid solution discharged through the discharge hole 338 of the outer tank 314 moves along the circulation pipeline 330 and is circulated at a set temperature through the pump 332, the filter 333, the valve 335, and the heater 337. When the phosphoric acid solution flows through the circulation pipeline 330, foreign matters are removed by the filter 333, and the phosphoric acid solution is continuously heated to the set temperature.

[0154] When the treatment with the phosphoric acid solution is completed, with the phosphoric acid solution filled in the inner tank 312, the second batch transfer unit 142c coupled to the support unit 400 supporting the substrate W transfers the substrate W to the second rinsing tank 142b.

[0155] Differently, the phosphoric acid solution is discharged through the discharge hole 339 of the circulation pipeline 330, and then, the second batch transfer unit 142c can transfer the substrate W to the second rinsing tank 142b.

[0156] The substrate W is loaded into the second rinsing tank 142b filled with pure water by the second batch transfer unit 142c. In this state, the substrate W supported on the support unit 400 is immersed in the pure water in the receiving space of the second rinsing tank 142b.

[0157] The pure water in the second rinsing tank 142b treats the substrate W.

[0158] After the treatment with pure water is completed, with the receiving space of the second rinsing tank 142b filled with pure water, the second transfer unit 134 can unload and transfer the substrate W to the attitude change tank 151.

[0159] When the substrate W is transferred to the attitude change tank 151, a liquid spraying treatment can be additionally performed on the substrate W to keep the substrate W wet.

[0160] The rinsed substrate W is moved to the attitude change unit 150, and is transferred to the standby chamber 210 in a horizontal attitude by a single-type transfer robot 156 that changes the attitude of the substrate, and a single-type processing step can be additionally performed. In this single-type processing step, processing can be performed on a single substrate W in a horizontal attitude. The single-type processing step can include a single-type liquid processing step of performing liquid processing on the substrate W, and can include a single-type drying step of drying the substrate W. When the substrate W temporarily stored in the standby chamber 210 is transferred to the liquid processing chamber 230, a liquid processing step can be performed in the liquid processing chamber 230. When the substrate W that has been liquid-processed in the liquid processing step is transferred to the drying chamber 240, a drying step can be performed in the drying chamber 240. The substrate W that has undergone a single-type processing step is transferred to the buffer unit 250, and then can be transferred to the transport container F placed in the second loading port unit 270 by the second transfer robot 262 in the second transfer chamber 260, and a transfer device (e.g., OHT) can hold the transport container F placed in the second loading port unit 270 and unload the transport container from the device for processing the substrate. A detailed description of this process is omitted.

[0161] According to the above-described embodiments, when processing a substrate in a processing tank storing a processing liquid, the processing liquid can flow smoothly around the contact portion between the substrate W and the support unit 400. Therefore, the substrate can be effectively processed.

[0162] The control unit 600 can control the apparatus 10 for processing a substrate. For example, the control unit 600 can control the components of the apparatus 10 for processing a substrate. For example, the control unit 600 can control the apparatus 10 for processing a substrate so that the apparatus 10 for processing a substrate can perform a process of processing the substrate W.

[0163] For example, the control unit 600 can control at least one or more of the first load port unit 110, the index chamber 120, the transfer unit 130, the batch processing unit 140, the attitude change unit 150, the buffer chamber 210, the first transfer chamber 220, the liquid processing chamber 230, the drying chamber 240, and the second transfer chamber 260.

[0164] In addition, the control unit 600 can include a process controller, a user interface, a display, and a memory. The process controller is a microprocessor (computer) that executes control of the apparatus 10 for processing a substrate. The user interface is a keyboard through which an operator performs command input operations and the like to manage the apparatus 10 for processing a substrate. The display visualizes and displays the operation status of the apparatus 10 for processing a substrate. The memory stores a control program for execution of processing, and the control program is executed in the apparatus 10 for processing a substrate under the control of the process controller. The memory also stores a program for performing processing on each component according to various data and processing conditions (i.e., a processing recipe). In addition, the user interface and the memory can be connected to the process controller. The processing recipe can be stored in a storage medium of the storage unit, and the storage medium can be a hard disk, and can be a removable disk such as a CD-ROM, a DVD, etc., and a semiconductor memory such as a flash memory.

[0165] In an embodiment of the present disclosure, as an embodiment, processing of the substrate W in the second chemical liquid tank 142a is described. However, differently, the substrate W can be processed in any processing tank selected from the second rinse tank 142b or the batch processing tanks 141a to 141b of the batch processing unit 140.

[0166] In the above-described embodiments, one first support bar 430 and two second support bars 450 are shown and described. However, differently, the numbers of the first support bar 430 and the second support bar 450 can be changed differently. For example, only either the first support bar 430 or the second support bar 450 can be provided in multiple numbers to support the substrate W, and accordingly, the position where the end of the substrate W is located can also be changed.

[0167] Figure 10 shows Figure 1 a second chemical liquid tank in which a support unit according to another embodiment of the present invention is installed. As Figure 10 shown, two first support rods 430 may be provided and configured to support the ends of the substrate W.

[0168] In the above embodiment, it is described that the support unit 400 is coupled to the second batch transfer unit 142c to support the substrate W. However, differently, the support unit 400 may be differently applied to a support unit that supports the substrate W in a device for processing a substrate, and the device immerses a plurality of substrates W in a processing tank in a vertical posture in batches.

[0169] It should be understood that exemplary embodiments are disclosed herein and other variations are possible. Each element or feature of a particular exemplary embodiment is generally not limited to that particular exemplary embodiment, but is interchangeable where applicable and can be used in the selected exemplary embodiment even if not specifically shown or described. Such modifications should not be regarded as departing from the spirit and scope of the present invention, and it will be apparent to those of ordinary skill in the art that all such modifications are intended to be included within the scope of the appended claims.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a processing tank having a receiving space for accommodating a processing liquid and processing a plurality of substrates; as well as a supporting unit, the supporting unit supporting the substrate in the processing tank; Wherein, the supporting unit comprises: a support member having a first support rod that supports an end portion of the substrate in a vertical state; and a fixing plate coupled to the support and fixing the support, A plurality of first slots are formed at the first supporting rod, and the edges of the substrate are inserted into the plurality of first slots. Each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom, The front and rear portions of the first slot are open toward the receiving space, and The bottom of the first slot includes a contact protrusion that protrudes upward from a lower end of a first side of the first slot and supports a lower end portion of the substrate.

2. The device according to claim 1, wherein: The first side of the first slot and the second side of the first slot are arranged such that a distance between the first side and the second side decreases downward.

3. The device according to claim 2, wherein: The first side and the second side are inclined.

4. The device according to claim 2, wherein: The first side and the second side of the first slot each have: a first region extending upward from the base; a second region extending upward from the first region; as well as a third region, the third region extending upward from the second region, The first region of the first side and the first region of the second side are arranged opposite to each other, The second region of the first side and the second region of the second side are arranged opposite to each other, The third area of ​​the first side and the third area of ​​the second side are arranged opposite to each other, The second area of ​​the first side and the second area of ​​the second side are inclined surfaces, and A distance between the second region of the first side and the second region of the second side is smaller than a distance between the third region of the first side and the third region of the second side.

5. The device according to claim 1, wherein: The first side and the second side of the first slot are each arranged such that a width of a surface increases downwardly.

6. The device according to claim 4, wherein: The contact protrusion has a top, a first side, and a second side, The top of the contact protrusion is a flat surface, and When the first supporting rod supports the substrate, the top portion of the contact protrusion supports the lower end portion of the substrate.

7. The device according to claim 6, wherein: Both sides of the contact protrusion are inclined.

8. The device according to claim 6, wherein: A top of the contact protrusion is disposed at the same height as an upper end of the first region of the first side of the first slot.

9. The device according to claim 6, wherein: The width of the top of the contact protrusion in a direction parallel to the arrangement direction of the first slots is the same as the thickness of the substrate.

10. The device according to claim 1, wherein: The support member further includes a second support rod supporting an end portion of the substrate in a vertical state, and A plurality of second slots are formed at the second supporting rod, and the edges of the substrate are inserted into the plurality of second slots.

11. The device according to claim 10, wherein: The second support rod comprises a top, a first side and a second side, The top of the second supporting rod includes a first height portion and a second height portion lower than the first height portion, The second slot is formed at the first height portion, and The second slot is formed at a position higher than the second height portion.

12. The device according to claim 10, wherein: When viewed from above, a distance from the center of the substrate to the second support rod is greater than a distance from the center of the substrate to the first support rod.

13. The device according to claim 1, wherein: The device also includes a transfer robot coupled to the upper end of the fixed plate, The transport robot immerses the support unit and the substrate supported on the support unit into the processing liquid or unloads the substrate from the processing liquid by moving the support unit upward or downward.

14. An apparatus for processing a substrate, the apparatus comprising: a processing tank having a receiving space for accommodating a processing liquid and processing a plurality of substrates; as well as a supporting unit, the supporting unit supporting the substrate in the processing tank; Wherein, the supporting unit comprises: a support member having a first support rod and a second support rod, the first support rod and the second support rod supporting an end portion of the substrate in a vertical state; and a fixing plate coupled to the support and fixing the support, A plurality of first slots are formed at the first support rod, into which the edges of the substrate are inserted, and a plurality of second slots are formed at the second support rod, into which the edges of the substrate are inserted, The second support rod comprises a top, a first side and a second side, The top of the second supporting rod includes a first height portion and a second height portion lower than the first height portion, The second slot is formed at the first height portion, and The second slot is formed at a position higher than the second height portion.

15. The device according to claim 14, wherein: Each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom, The front and rear portions of the first slot are open toward the receiving space, and The bottom of the first slot includes a contact protrusion that protrudes upward from a lower end of the first side of the first slot and supports a lower end portion of the substrate.

16. The device according to claim 15, wherein: The first side of the first slot and the second side of the first slot are inclined such that a distance between the first side and the second side decreases downward.

17. The device according to claim 15, wherein: The first side and the second side of the first slot each have: a first region extending upward from the base; a second region extending upward from the first region; as well as a third region, the third region extending upward from the second region, The first region of the first side and the first region of the second side are arranged opposite to each other, The second region of the first side and the second region of the second side are arranged opposite to each other, The third area of ​​the first side and the third area of ​​the second side are arranged opposite to each other, The second region of the first side and the second region of the second side are inclined surfaces, and A distance between the second region of the first side and the second region of the second side is smaller than a distance between the third region of the first side and the third region of the second side.

18. The device according to claim 17, wherein: The contact protrusion has a top and a side, The top of the contact protrusion is a flat surface, and When the first supporting rod supports the substrate, the top portion of the contact protrusion supports the lower end portion of the substrate.

19. The device according to claim 18, wherein: The top of the contact protrusion is disposed at the same height as an upper end of the first region of the first side of the first slot.

20. An apparatus for processing a substrate, the apparatus comprising: a processing tank having a receiving space for accommodating a processing liquid and processing a plurality of substrates; as well as a supporting unit, the supporting unit supporting the substrate in the processing tank; Wherein, the supporting unit comprises: A support member having a first support rod and a second support rod, wherein the first support rod and the second support rod support an end portion of the substrate in a vertical state; a fixing plate coupled to the support and fixing the support; and a transfer robot coupled to an upper end of the fixed plate, A plurality of first slots are formed at the first support rod, into which the edges of the substrate are inserted, and a plurality of second slots are formed at the second support rod, into which the edges of the substrate are inserted, Each of the plurality of first slots is defined by a first side, a second side facing the first side, and a bottom, The front and rear portions of the first slot are open toward the receiving space, and The bottom of the first slot includes a contact protrusion that protrudes upward from a lower end of the first side of the first slot and supports a lower end portion of the substrate, The second support rod comprises a top, a first side and a second side, The top of the second supporting rod includes a first height portion and a second height portion lower than the first height portion, The second slot is formed at the first height portion, The second slot is formed at a position higher than the second height portion, and When viewed from above, a distance from the center of the substrate to the second support rod is greater than a distance from the center of the substrate to the first support rod.

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