Microstrip antenna and terminal equipment

Abstract

The embodiment of the invention provides a microstrip antenna and terminal equipment, the microstrip antenna comprises a dielectric substrate and a feed structure, the dielectric substrate comprises an elliptical patch, a grounding plate and a dielectric, and the elliptical patch comprises various types of grooves; the medium is arranged between the elliptical patch and the grounding plate; the feed structure penetrates through the grounding plate, and the medium is connected with the elliptical patch; the feed structure is used for feeding power to the dielectric substrate and exciting the microstrip antenna to generate multiple resonant modes. The feed structure feeds the dielectric substrate to form an elliptical resonant cavity, and multiple types of grooves are formed in the elliptical patch, so that multiple resonant modes in the elliptical resonant cavity can be coupled, and an ultra-wide bandwidth is formed; the problem that the mode of a patch antenna cannot be effectively utilized, and meanwhile, low profile and miniaturization cannot be ensured, bandwidth broadening cannot be completed, so that the multifunctional and high-performance requirements of a front-end communication system cannot be met in the prior art is solved.

Description

Technical Field

[0001] Embodiments of the present application relate to the field of communications, and more particularly, to a microstrip antenna and a terminal device. Background Art

[0002] Microstrip patch antennas have the advantages of low profile, light weight, easy processing, etc., and can be widely used in modern wireless communication devices. However, conventional patch antennas are resonant antennas, which have a narrow bandwidth while having a low profile and miniaturization. In order to obtain a wider bandwidth, an additional impedance matching network is often used or the low profile and miniaturization are sacrificed.

[0003] In related technologies, rectangular and circular broadband microstrip antennas excited by differential feeding technology often face the problem that the multi-mode coupling technology of rectangular and circular microstrip antennas results in a large size after multi-mode coupling, and the coupling difficulty between multi-modes of circular microstrip antennas is relatively large. Its eccentricity is a fixed value, and it is impossible to complete the suppression of relevant modes and the change of electrical length, that is, it is impossible to effectively utilize the modes of the patch antenna itself while ensuring a low profile, miniaturization, and bandwidth broadening to meet the multi-functional and high-performance requirements of the front-end communication system. Summary of the Invention

[0004] Embodiments of the present application provide a microstrip antenna and a terminal device to at least solve the problem in related technologies that it is impossible to effectively utilize the modes of the patch antenna itself while ensuring a low profile, miniaturization, and bandwidth broadening to meet the multi-functional and high-performance requirements of the front-end communication system.

[0005] According to an embodiment of the present application, a microstrip antenna is provided, including:

[0006] A dielectric substrate, the dielectric substrate includes an elliptical patch, a ground plane, and a dielectric, the elliptical patch includes various types of slots; the dielectric is disposed between the elliptical patch and the ground plane;

[0007] A feeding structure, the feeding structure penetrates through the ground plane, the dielectric and is connected to the elliptical patch; the feeding structure is used to feed the dielectric substrate and excite the microstrip antenna to generate multiple resonance modes.

[0008] According to another embodiment of the present application, a terminal device is provided, including the above antenna.

[0009] The microstrip antenna provided by this application includes a dielectric substrate, which includes an elliptical patch, a ground plane, and a dielectric. The elliptical patch includes various types of slots; the dielectric is disposed between the elliptical patch and the ground plane; a feeding structure that penetrates the ground plane, the dielectric, and is connected to the elliptical patch; the feeding structure is used to feed the dielectric substrate and excite the microstrip antenna to generate multiple resonance modes. The feeding structure feeding the dielectric substrate can form an elliptical resonant cavity. By setting various types of slots in the elliptical patch, multiple resonance modes in the elliptical resonant cavity can be coupled, thereby forming an ultra-wide bandwidth, solving the problem in the related art that it is impossible to effectively utilize the self-modes of the patch antenna while ensuring a low profile and miniaturization and broadening the bandwidth to meet the multi-functional and high-performance requirements of the front-end communication system. Description of the Drawings

[0010] Figure 1 are the three views of the microstrip antenna according to the embodiments of this application;

[0011] Figure 2 are the electric field and magnetic current element distribution diagrams of the oTM12, oTM32, and oTM52 modes according to the embodiments of this application;

[0012] Figure 3 are the electric field and magnetic current element distribution diagrams of the oTM12, oTM32, and oTM52 modes after loading the long-axis horizontal slots according to the embodiments of this application;

[0013] Figure 4 are the electric field and magnetic current element distribution diagrams of the oTM12, oTM32, and oTM52 modes after loading the longitudinal slots according to the embodiments of this application;

[0014] Figure 5 are the electric field and magnetic current element distribution diagrams of the oTM12, oTM32, and oTM52 modes after loading the short-circuit vias according to the embodiments of this application;

[0015] Figure 6 are the three views with the dimension markings of the microstrip antenna according to the embodiments of this application;

[0016] Figure 7 is a schematic diagram of the gain frequency response characteristic curve according to the embodiments of this application;

[0017] Figure 8 is a schematic diagram of the impedance frequency response characteristic curve according to the embodiments of this application;

[0018] Figure 9 is the far-field pattern at the frequency point of 3.38 GHz according to the embodiments of this application;

[0019] Figure 10 is the far-field pattern at the frequency point of 3.7 GHz according to the embodiments of this application;

[0020] Figure 11 It is the far - field pattern with a frequency point of 3.8 GHz according to the embodiments of the present application. Detailed implementation manners

[0021] In the following, the embodiments of the present application will be described in detail with reference to the accompanying drawings and in combination with the embodiments.

[0022] It should be noted that the terms "first", "second", etc. in the description, claims and above - mentioned drawings of the present application are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence.

[0023] The microstrip antennas in the prior art still face the problem of too large electrical size, and the resonant modes selected in the current design introduce too many chaotic modes during coupling. In order to suppress the chaotic higher - order modes, the selection of the feeding position is more strict and limited, resulting in difficult impedance matching, more slots, and excessive damage to the integrity of the antenna patch surface.

[0024] In view of the problems existing in the above - mentioned prior art, the present application proposes a microstrip antenna, which includes a dielectric substrate and a feeding structure. The dielectric substrate includes an elliptical patch, a ground plane and a dielectric. The feeding structure feeds the dielectric substrate to form an elliptical resonant cavity. By setting various types of slots in the elliptical patch, multiple resonant modes in the elliptical resonant cavity can be coupled, so as to form an ultra - wide bandwidth, solve the problem that in the related art, it is impossible to effectively utilize the self - modes of the patch antenna while ensuring a low profile, miniaturization and bandwidth broadening to meet the multi - functional and high - performance requirements of the front - end communication system.

[0025] In this embodiment, a microstrip antenna is provided. Figure 1 It is the three - view drawing of the microstrip antenna according to the embodiments of the present application. As Figure 1 shown, the microstrip antenna includes: a dielectric substrate 10 (not shown in the figure), the dielectric substrate 10 includes an elliptical patch 101, a ground plane 102 and a dielectric 103, and the elliptical patch 101 includes various types of slots; the dielectric 103 is disposed between the elliptical patch 101 and the ground plane 102; a feeding structure 11, the feeding structure 11 penetrates through the ground plane 102, the dielectric 103 and is connected to the elliptical patch 101; the feeding structure 11 is used to feed the dielectric substrate 10 to excite the microstrip antenna to generate multiple resonant modes.

[0026] In the embodiments of the present application, an elliptical microstrip antenna with rich usage modes is used as a radiator, which has a smaller structural shape and rich resonance modes compared with circular patch and rectangular patch antennas. Moreover, different types of slots are opened on the elliptical patch, which can promote the coupling of multiple resonance modes, so that while the frequency band is broadened, a high and stable passband gain can also be obtained.

[0027] As an example, the materials of the elliptical patch and the ground plane can be copper sheets, the material of the dielectric can be glass fiber, the feeding structure can be a coaxial feeding probe, and the coaxial feeding probe can select an SMA-KDF radio frequency connector.

[0028] In an exemplary embodiment, the multiple types of slots include a first type of slot 1011, a second type of slot 1012, and a third type of slot 1013. The first type of slot 1011, the second type of slot 1012, and the third type of slot 1013 all penetrate the elliptical patch 101 in the thickness direction of the elliptical patch 101.

[0029] In an exemplary embodiment, the first type of slot 1011 is a closed elliptical slot. The center of the elliptical slot coincides with the center of the elliptical patch 101, and the major axis of the elliptical slot coincides with the major axis of the elliptical patch 101.

[0030] As an example, it can be set that the center of the elliptical slot coincides with the center of the elliptical patch 101, and the major axis of the elliptical slot coincides with the major axis of the elliptical patch 101. Setting the elliptical slot can increase the number of magnetic current array elements, change the electrical lengths of multiple resonance modes to be coupled, thereby increasing the radiation intensity of multiple resonance modes. At the same time, for impedance matching, that is, providing better impedance matching conditions for the feeding position, and some high-order modes that are not conducive to radiation can be suppressed, so that the antenna gain can be increased.

[0031] In an exemplary embodiment, there are two feeding structures 11. The two feeding structures 11 are symmetrically arranged according to the major axis of the elliptical patch 101 and are respectively located on the minor axis of the elliptical patch 101.

[0032] In an exemplary embodiment, the feeding structure 11 adopts differential excitation feeding to excite the microstrip antenna to generate multiple odd-order and odd-harmonic resonance modes.

[0033] Exemplarily, in order to suppress even-order modes and even-harmonic modes and ensure that the radiation direction does not shift, two feeding structures can be symmetrically arranged on both sides of the major axis of the elliptical patch. Thus, the feeding form of the antenna can adopt differential excitation feeding on the minor axis of the elliptical patch. The modes excited by the minor axis feeding can be odd-order modes, and the modes of differential excitation feeding can be odd-harmonic modes. The radiation pattern of odd-order and odd-harmonic modes shows an end-fire linear polarization.

[0034] Exemplarily, two feeding structures 11 can be symmetrically arranged according to the major axis of the elliptical patch 101 and are respectively located on the minor axis of the elliptical patch 101.

[0035] By reasonably selecting the feeding form and position in the embodiments of the present application, stable efficiency and gain within the frequency band can be achieved.

[0036] As an example, multiple odd-order and odd-degree resonance modes can include a first resonance mode, a second resonance mode, and a third resonance mode, where the frequency of the first resonance mode can be lower than that of the second resonance mode, and the frequency of the second resonance mode can be lower than that of the third resonance mode.

[0037] As an example, three odd-order and odd-degree modes, namely oTM12, oTM32, and oTM52, can be selected as the main operating modes of the antenna.

[0038] Figure 2 are the electric field and magnetic current element distribution diagrams of the three modes of oTM12, oTM32, and oTM52 according to the embodiments of the present application. As Figure 2 shown, it can be seen that the oTM12, oTM32, and oTM52 modes have similar electric field distribution characteristics, that is, the electric wall is at the major axis position, which is the characteristic of the odd-degree mode, and the even-degree modes are all suppressed. At the same time, since the feeding form is differential excitation on the minor axis, all modes with the minor axis as the electric wall are suppressed, that is, the even-order modes are completely suppressed. Therefore, the finally retained modes are odd-order and odd-degree modes. Therefore, when using differential excitation feeding, the three modes of oTM12, oTM32, and oTM52 can be well coupled.

[0039] In an exemplary embodiment, at least two of the second type of slots 1012 are included, where the two second type of slots 1012 respectively extend from the edges of two opposite sides of the elliptical patch 101 towards the center of the elliptical patch 101.

[0040] As an example, as Figure 1 shown, the second type of slots 1012 can be horizontal rectangular slots on the elliptical patch 101. The two horizontal rectangular slots can be respectively located on the major axis of the elliptical patch 101 and are symmetric about the minor axis of the elliptical patch 101. The two horizontal rectangular slots can be semi-closed rectangular slots or fully closed rectangular slots. The two horizontal rectangular slots respectively extend from the edges of two opposite sides of the elliptical patch 101 towards the center of the elliptical patch 101, and the center line of the horizontal rectangular slots can coincide with the major axis of the elliptical patch antenna.

[0041] In the embodiments of the present application, the setting of the second type of slots 1012 can increase the antenna gain and change the electrical lengths of the three modes to be coupled. Two second type of slots 1012 are arranged on the long axis, which can increase the number of magnetic current elements, thereby increasing radiation and gain; being symmetrically arranged according to the short axis of the elliptical patch 101 can ensure that the radiation direction does not deviate after slotting.

[0042] In an exemplary embodiment, there are four third type of slots 1013, and the four third type of slots 1013 are respectively symmetrically arranged according to the long axis and the short axis of the elliptical patch 101, and the four third type of slots 1013 respectively extend from the edges on the opposite sides of the elliptical patch 101 towards the long axis of the elliptical patch 101.

[0043] Exemplarily, there can be four third type of slots 1013, and the four third type of slots 1013 can be axisymmetric respectively according to the long axis and the short axis. The third type of slots 1013 can be longitudinal slots in the direction parallel to the short axis direction of the elliptical patch.

[0044] Setting longitudinal slots will not introduce magnetic current elements that are not conducive to radiation. The longitudinal slots of the elliptical patch can increase the cross-polarization level intensity; moreover, the four third type of slots 1013 are respectively symmetrically arranged according to the long axis and the short axis of the elliptical patch 101, which can ensure that the radiation direction does not deviate after slotting.

[0045] As an example, the third type of slots 1013 can include a first rectangular slot, a second rectangular slot, a third rectangular slot, and a fourth rectangular slot. Among them, the first rectangular slot and the second rectangular slot can be symmetrically arranged according to the short axis of the elliptical patch; the first rectangular slot and the third rectangular slot can be symmetrically arranged according to the long axis of the elliptical patch; the fourth rectangular slot and the third rectangular slot can be symmetrically arranged according to the short axis of the elliptical patch.

[0046] The third type of slots 1013 set in the embodiments of the present application can reduce the frequency ratio of multiple resonant modes and bring the frequency points of multiple modes closer. For example, it can increase the electrical lengths of the oTM32 and oTM52 modes to make them close to the electrical length of the oTM12 mode.

[0047] In an exemplary embodiment, the antenna further includes shorting vias 12, and the shorting vias penetrate through the dielectric substrate 10 in the axial direction of the dielectric substrate 10.

[0048] In an exemplary embodiment, there are four shorting vias 12, and the four shorting vias 12 are respectively symmetrically arranged according to the long axis and the short axis of the elliptical patch 101. Among them, the perpendicular distance from the shorting vias 12 to the long axis of the elliptical patch is less than the perpendicular distance from the third type of slots 1013 to the long axis of the elliptical patch 101.

[0049] In the embodiments of the present application, four short - circuit vias 12 can be arranged on the elliptical patch 101. The four short - circuit vias 12 are symmetric about the major axis and the minor axis of the elliptical patch 101 respectively. The short - circuit vias 12 can be used to reduce the electrical length of the low - frequency point resonance mode, so that the electrical length of the low - frequency point resonance mode is close to that of the high - frequency point resonance mode. At the same time, the four short - circuit vias 12 are symmetric about the major axis and the minor axis of the elliptical patch 101 respectively, which can ensure that the radiation direction does not deviate after grooving.

[0050] For example, short - circuit vias can be loaded to reduce the electrical length of the oTM12 mode and make it close to the electrical lengths of the two high - frequency point resonance modes oTM32 and oTM52.

[0051] As an example, the vertical distance from the short - circuit via 12 to the major axis of the elliptical patch can be less than the vertical distance from the third - type slot 1013 to the major axis of the elliptical patch 101, which can avoid the situation of short - circuit vias in the third - type slot; the relationship between the vertical distance from the short - circuit via to the minor axis and the distance from the third - type slot to the minor axis is not limited in the embodiments of the present application, and those skilled in the art can flexibly set it based on the actual electrical wall position of the resonance mode.

[0052] In an exemplary embodiment, the ground plane 102 is provided with a ground - plane slot 1021, and both ends of the ground - plane slot 1021 extend towards the edges on two opposite sides of the ground plane.

[0053] In an exemplary embodiment, the ground - plane slot 1021 is a fully - enclosed slot, and the ground - plane slot 1021 penetrates the ground plane 102 in the thickness direction of the ground plane.

[0054] In an exemplary embodiment, there are two ground - plane slots 1021, and the two ground - plane slots 1021 are symmetric about the projection axis of the minor axis of the elliptical patch 101 on the ground plane 102.

[0055] In an exemplary embodiment, a single ground - plane slot 1021 is symmetric about the projection axis of the major axis of the elliptical patch 101 on the ground plane 102.

[0056] Exemplarily, multiple ground - plane slots 1021 can be arranged on the ground plane 102. For example, as Figure 1 shown, two ground - plane slots 1021 can be arranged on the ground plane 102.

[0057] As an example, the ground plane slot 1021 can be a longitudinal slot on the ground plane 102. The longitudinal slot on the ground plane 102 can increase the electrical length of the high-frequency point resonance mode while preventing excessive damage to the integrity of the elliptical patch surface and ensuring the integrity of the patch surface, making the electrical length of the high-frequency point resonance mode close to that of the low-frequency point resonance mode, thus facilitating the coupling of different resonance modes. At the same time, the two ground plane slots 1021 are symmetrically arranged with respect to the projection axis of the short axis of the elliptical patch 101 on the ground plane 102, and a single ground plane slot 1021 is symmetrically arranged with respect to the projection axis of the long axis of the elliptical patch 101 on the ground plane 102, which can ensure that the radiation direction does not deviate after slotting.

[0058] For example, opening a longitudinal slot on the ground plane can increase the electrical length of the oTM52 mode, making its electrical length consistent with that of the two low-frequency modes oTM12 and oTM32. At the same time, since the slot opened is a longitudinal slot, the influence on the magnetic current elements in the horizontal long-axis direction is minimal. Therefore, opening a longitudinal slot hardly affects the oTM12 and oTM32 modes. In this way, the coupling between the three modes can be completed to form an ultra-wideband antenna. At the same time, as the number of antenna magnetic current array elements increases, the gain of the antenna can also increase accordingly.

[0059] To facilitate the understanding of the process of opening different types of slots on the elliptical patch of the present application, the following is further illustrated through several examples:

[0060] Example 1

[0061] Refer to Figure 1 , taking the three odd-order and odd-degree modes of oTM12, oTM32, and oTM52 as examples, before performing the multimode coupling of oTM12, oTM32, and oTM52, the following settings can be made:

[0062] 1. Loading of the horizontal slot along the long axis;

[0063] The horizontal slot along the long axis can include a first type of slot 1011 (elliptical slot) and a second type of slot 1012 (horizontal rectangular slot along the long axis), and the first type of slot 1011 (elliptical slot) and the second type of slot 1012 (horizontal rectangular slot along the long axis) are loaded respectively.

[0064] Among them, the purposes of loading the horizontal slot along the long axis are: 1) to improve the gain within the passband after coupling; 2) for subsequent impedance matching needs. The elliptical slot can be loaded between the two feeding structures respectively, and the horizontal rectangular slot along the long axis can be loaded at the boundary positions on both sides of the long axis. After the slot loading, the electrical lengths of the three modes of oTM12, oTM32, and oTM52 will be greatly reduced, thus completing the reallocation of the frequency point positions.

[0065] Figure 3It is the distribution diagrams of electric fields and magnetic current elements of three modes, namely oTM12, oTM32, and oTM52, after loading the long-axis horizontal slot according to an embodiment of the present application. As Figure 3 shown, it can be seen that the number of magnetic current elements used for radiation in the oTM12 and oTM52 modes increases, but the number of anti-phase magnetic current elements in the oTM32 mode increases, which is not conducive to radiation.

[0066] Therefore, the next rectification operation, that is, opening a longitudinal slot, is required.

[0067] 2. Longitudinal slot loading

[0068] Opening a longitudinal slot can include loading an elliptical patch longitudinal rectangular slot and a ground plane longitudinal rectangular slot.

[0069] Among them, the purpose of loading the longitudinal slot is to reduce the frequency ratio of the three modes of oTM12, oTM32, and oTM52 and bring the frequency points of the three modes closer.

[0070] When loading the longitudinal slot, the intersection position of the longitudinal virtual electric walls of the two high-order modes, oTM32 and oTM52, can be found first, and the elliptical patch longitudinal rectangular slot can be opened at the intersection position of the electric walls.

[0071] Figure 4 It is the distribution diagrams of electric fields and magnetic current elements of three modes, namely oTM12, oTM32, and oTM52, after loading the longitudinal slot according to an embodiment of the present application. As Figure 4 shown, when loading the longitudinal slot, the intersection position of the longitudinal virtual electric walls of the two high-order modes, oTM32 and oTM52, can be found first, and the elliptical patch longitudinal rectangular slot can be opened at the intersection position of the ground plane longitudinal virtual electric walls of the oTM32 and oTM52 modes. At the same time, since this position is the electric field extreme value position of the oTM12 mode, opening symmetric longitudinal slots at the intersection position of the virtual electric walls can greatly increase the electrical length of the oTM32 and oTM52 modes, while having almost no impact on the electrical length of the oTM12 mode, thus completing the operation of moving the frequency points of the oTM32 and oTM52 modes towards the low-frequency oTM12 mode.

[0072] 3. Short-circuit via loading

[0073] Four symmetric short-circuit vias can be loaded at the position of the oTM12 electric field peak point and the electric wall positions of the oTM32 and oTM52 modes, so as to reduce the electrical length of the oTM12 mode and complete the coupling of the oTM12 mode frequency point moving towards the high frequency and the oTM32 and oTM52 modes.

[0074] Figure 5 It is the distribution diagrams of electric fields and magnetic current elements of three modes, namely oTM12, oTM32, and oTM52, after loading the short-circuit vias according to an embodiment of the present application. As Figure 5As shown, the oTM12 mode has five strong co-directional magnetic current elements, the oTM32 mode has three strong co-directional magnetic current elements, and the oTM52 mode has three strong co-directional magnetic current elements and two weak co-directional magnetic current elements. Therefore, as shown in the appendix Figure 5 the gain shows strong in the low-frequency band; weak in the middle frequency band; and medium in the high-frequency band.

[0075] After the above three methods of loading are completed, the microstrip antenna as shown in Figure 1 can be obtained.

[0076] The following further illustrates the size of each structure of the microstrip antenna through an example:

[0077] Example 2

[0078] Figure 6 are the three-view drawings marked with the dimensions of the microstrip antenna according to the embodiments of the present application. As shown in Figure 6 the specific dimension parameters (mm) can be as shown in Table 1 below:

[0079]

[0080] Among them, the wavelength λ0 can be the wavelength corresponding to the center frequency of 3.6 GHz. For example, λ0 can be taken as 83.33 mm. The eccentricity e1 of the elliptical patch can be within a certain range. For example, e1 is in the range of 0.83 to 0.85 mm. The eccentricity should not be too small, otherwise the oTMn2 mode will be suppressed. The eccentricity e2 of the elliptical groove can be fixed. For example, e2 can be taken as 0.94 mm.

[0081] Example 3

[0082] Figure 7 is a schematic diagram of the gain frequency response characteristic curve according to the embodiments of the present application. As shown in Figure 7 it can be seen that the gain range is from 4.5 dBi to 8.4 dBi. Therefore, it can be considered that the gain within the passband of the microstrip antenna according to the embodiments of the present application is relatively stable.

[0083] Figure 8 is a schematic diagram of the impedance frequency response characteristic curve according to the embodiments of the present application. As shown in Figure 8 it can be seen that the bandwidth range is from 3.26 GHz to 3.95 GHz, that is, a 19% relative bandwidth. The corresponding antenna size is 1.2λ * 0.96λ; the corresponding profile thickness is 0.054λ. It can be considered that the antenna size is also small and the profile thickness is much smaller than the corresponding wavelength.

[0084] Figure 9 is the far-field pattern at a frequency point of 3.38 GHz according to the embodiments of the present application. Figure 10is the far-field pattern with a frequency point of 3.7 GHz according to an embodiment of the present application. Figure 11 is the far-field pattern with a frequency point of 3.8 GHz according to an embodiment of the present application, as Figure 9 , Figure 10 , Figure 11 shown, where Figure 9 , Figure 10 , Figure 11 the left pattern is the pattern with Φ = 0°, and the right is the pattern with Φ = 90°. All patterns exhibit end-fire characteristics. Similar pattern characteristics can be obtained through the loading technology in three modes. It can be considered that the patterns of the three modes in the entire passband are basically the same, and the magnetic current element adjustment and pattern adjustment of the higher-order modes are completed. The microstrip antenna of the present application includes a dielectric substrate, the dielectric substrate includes an elliptical patch, a ground plane and a dielectric, the elliptical patch includes various types of slots; the dielectric is disposed between the elliptical patch and the ground plane; a feeding structure, the feeding structure penetrates through the elliptical patch, the dielectric and is connected to the ground plane; the feeding structure is used to feed the dielectric substrate and excite the microstrip antenna to generate multiple resonance modes. Feeding the dielectric substrate by the feeding structure can form an elliptical resonant cavity. By setting various types of slots in the elliptical patch, multiple resonance modes in the elliptical resonant cavity can be coupled, thereby forming an ultra-wide bandwidth, solving the problem that in the related art, it is impossible to effectively utilize the self-modes of the patch antenna while ensuring a low profile and miniaturization and completing the bandwidth broadening to meet the multi-functional and high-performance requirements of the front-end communication system.

[0085] According to another embodiment of the present application, a terminal device is provided, including the above antenna.

[0086] Exemplarily, the terminal device may include a mobile phone, a wireless router, a satellite communication terminal, a tablet computer, a wearable device, a vehicle-mounted device, an augmented reality (AR) / virtual reality (VR) device, a laptop computer, an ultra-mobile personal computer (UMPC), a netbook, a personal digital assistant (PDA), etc. The embodiments of the present invention do not impose any restrictions on the specific types of the terminal device.

[0087] The above are only exemplary embodiments of the present application and are not used to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the principle of the present application shall be included in the protection scope of the present application.

Claims

1. A microstrip antenna, characterized in that, Comprising: A dielectric substrate, the dielectric substrate including an elliptical patch, a ground plane, and a dielectric, the elliptical patch including various types of slots; The dielectric is disposed between the elliptical patch and the ground plane; A feeding structure, the feeding structure passing through the ground plane, the dielectric and connecting to the elliptical patch; the feeding structure is used to feed the dielectric substrate and excite the microstrip antenna to generate various resonance modes.

2. The antenna according to claim 1, characterized in that The various types of slots include a first type of slot, a second type of slot, and a third type of slot, and the first type of slot, the second type of slot, and the third type of slot all penetrate the elliptical patch in the thickness direction of the elliptical patch.

3. The antenna according to claim 2, wherein The first type of slot is a closed elliptical slot, the center of the elliptical slot coincides with the center of the elliptical patch, and the major axis of the elliptical slot coincides with the major axis of the elliptical patch.

4. The antenna according to claim 1, wherein There are two feeding structures, and the two feeding structures are symmetrically arranged according to the major axis of the elliptical patch and are respectively located on the minor axis of the elliptical patch.

5. The antenna according to claim 2, wherein The second type of slot includes at least two, and among them, the two second type of slots respectively extend from the edges of two opposite sides of the elliptical patch towards the center of the elliptical patch.

6. The antenna according to claim 2, wherein The third type of slot is four, and the four third type of slots are symmetrically arranged according to the major axis and minor axis of the elliptical patch respectively, and the four third type of slots respectively extend from the edges of the opposite sides of the elliptical patch towards the major axis of the elliptical patch.

7. The antenna according to claim 1, wherein The feeding structure adopts differential excitation feeding to excite the microstrip antenna to generate various odd-order and odd-times resonance modes.

8. The antenna according to claim 2, characterized in that The antenna further includes short-circuit vias, and the short-circuit vias penetrate the dielectric substrate in the axial direction of the dielectric substrate.

9. The antenna according to claim 8, characterized in that, There are four short-circuit vias, and the four short-circuit vias are symmetrically arranged according to the major axis and minor axis of the elliptical patch respectively. Among them, the vertical distance of the short-circuit via from the major axis of the elliptical patch is less than the vertical distance of the third type of slot from the major axis of the elliptical patch.

10. The antenna according to claim 1, wherein The ground plane is provided with a ground-plane slot, and both ends of the ground-plane slot extend towards the edges of two opposite sides of the ground plane respectively.

11. The antenna according to claim 10, wherein The ground-plane slot is a fully enclosed slot, and the ground-plane slot penetrates the ground plane in the thickness direction of the ground plane.

12. The antenna according to claim 10, wherein There are two ground-plane slots, and the two ground-plane slots are symmetric about the projection axis of the minor axis of the elliptical patch on the ground plane.

13. The antenna according to claim 12, wherein A single ground-plane slot is symmetric about the projection axis of the major axis of the elliptical patch on the ground plane.

14. A terminal device, characterized in that, An antenna according to any one of claims 1-13.

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