Semiconductor device and electronic apparatus

Abstract

The invention discloses a semiconductor device and electronic equipment. The semiconductor device comprises a substrate; the nucleating layer is positioned on one side of the substrate; the channel layer is positioned on one side, far away from the substrate, of the nucleating layer; the barrier layer is positioned on one side, far away from the nucleating layer, of the channel layer; the buffer layer is located between the nucleating layer and the channel layer, the buffer layer comprises a doped superlattice layer, and the doped superlattice layer comprises a carbon-doped aluminum gallium nitrogen layer and a p-type polarization doped aluminum gallium nitrogen layer.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technologies, and particularly to a semiconductor device and an electronic device. Background Art

[0002] Gallium nitride-based semiconductor materials, as an important third-generation wide-bandgap semiconductor material, have the characteristics of large bandgap, high breakdown field strength, high mobility, direct bandgap, high temperature resistance, stable chemical properties, and being easy to form various heterojunction structures. Gallium nitride-based heterojunction thin films have been widely used in semiconductor devices such as light-emitting devices LED (Light Emitting Diode) and radio frequency / power devices HEMT (High Electron Mobility Transistor).

[0003] Due to the small size and high price of gallium nitride substrates, currently commercially available gallium nitride device thin films are mainly grown on sapphire, silicon, and silicon carbide substrates by heteroepitaxy. The mainstream epitaxial equipment for growing commercial gallium nitride materials is metalorganic chemical vapor deposition equipment (MOCVD). The gallium nitride-based thin films grown by MOCVD have an intrinsic weak n-type background electron concentration on the order of 10 17 cm -3 magnitude. The weak n-type of the intrinsic gallium nitride thin film leads to a risk of leakage at high voltages. For gallium nitride-based HEMT devices, obtaining a high-resistance gallium nitride-based buffer layer is one of the key technologies for achieving high-voltage and high-frequency operation of the device.

[0004] By incorporating carbon impurity atoms into aluminum gallium nitride thin films through low-temperature growth or introducing external doping sources, the growth of a high-resistance aluminum gallium nitride buffer layer can be achieved. However, it is difficult to achieve high resistance when the carbon doping concentration is low, and too many carbon impurity defect states capture electrons at high voltages, resulting in an increase in the on-resistance of the device and affecting the high-frequency electrical properties of the device; and carbon doping achieves high resistance by compensating for background electrons through defects, but the introduction of carbon doping defects in aluminum gallium nitride will lead to a reduction in the crystal quality of the buffer layer. Summary of the Invention

[0005] Embodiments of the present disclosure provide a semiconductor device and an electronic device, which can obtain a buffer layer with high resistance and low defect density, reduce high-voltage leakage of the device, and improve the high-frequency electrical properties of the device.

[0006] The semiconductor device and the electronic device provided by the embodiments of the present disclosure are specifically as follows: On the one hand, embodiments of the present disclosure provide a semiconductor device, including: A substrate; A nucleation layer located on one side of the substrate; A channel layer located on the side of the nucleation layer away from the substrate; A barrier layer, located on a side of the channel layer away from the nucleation layer; A buffer layer, located between the nucleation layer and the channel layer, the buffer layer including a doped superlattice layer, the doped superlattice layer including a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

[0007] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the doped superlattice layer includes at least one doped superlattice unit, the doped superlattice unit including a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and p-type polarization-doped aluminum gallium nitride layers, and the aluminum component of the carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is the same.

[0008] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, there are a plurality of the doped superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different doped superlattice units are different.

[0009] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, in a direction away from the substrate, the aluminum components of the carbon-doped aluminum gallium nitride layers in different doped superlattice units gradually decrease.

[0010] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the number of the carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is 2 to 200.

[0011] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the buffer layer further includes an aluminum nitride layer, and the aluminum nitride layer and the doped superlattice layer are periodically stacked to form a component superlattice layer as the buffer layer.

[0012] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the doped superlattice layer includes at least one doped superlattice unit, the doped superlattice unit including a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and p-type polarization-doped aluminum gallium nitride layers; The component superlattice layer includes at least one component superlattice unit, the component superlattice unit including a plurality of repeating layers, the repeating layer including one aluminum nitride layer and at least one doped superlattice unit, and the aluminum component of the carbon-doped aluminum gallium nitride layers in each repeating layer is the same.

[0013] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, there are a plurality of the component superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different component superlattice units are different.

[0014] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the thickness of the aluminum nitride layer is 1 nm to 10 nm, and the number of the repeating layers of one of the component superlattice layers is 2 to 100.

[0015] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the difference between the aluminum component of the adjacent carbon-doped aluminum gallium nitride layer and the average aluminum component of the p-type polarization-doped aluminum gallium nitride layer is within ±1%.

[0016] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the change range of the aluminum component in the p-type polarization-doped aluminum gallium nitride layer is 1% to 10%.

[0017] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the aluminum component of the carbon-doped aluminum gallium nitride layer is 1% to 95%, and the carbon doping concentration is 10 18 cm -3 ~10 20 cm -3 。

[0018] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the thickness of the carbon-doped aluminum gallium nitride layer is 2 nm to 40 nm, and the thickness of the p-type polarization-doped aluminum gallium nitride layer is 2 nm to 40 nm.

[0019] On the other hand, the embodiments of the present disclosure provide an electronic device including the above semiconductor device provided by the embodiments of the present disclosure.

[0020] The beneficial effects of the present disclosure are as follows: The semiconductor device and the electronic device provided by the embodiments of the present disclosure include: a substrate; a nucleation layer located on one side of the substrate; a channel layer located on the side of the nucleation layer away from the substrate; a barrier layer located on the side of the channel layer away from the nucleation layer; a buffer layer located between the nucleation layer and the channel layer, the buffer layer including a doped superlattice layer, and the doped superlattice layer including a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer. Compared with using a carbon-doped aluminum gallium nitride layer as a buffer layer in the related art, the present disclosure uses a doped superlattice layer including a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer as the buffer layer, reducing the average carbon doping concentration of the buffer layer, thereby obtaining a buffer layer with a high resistance and a low defect density. Moreover, if the average carbon doping concentration is low, it can improve the capture of channel electrons by carbon doping defect energy levels in the buffer layer under high voltage, thereby reducing the on-resistance of the device and further improving the high-frequency electrical properties; in addition, the carbon-doped aluminum gallium nitride layer and the p-type polarization-doped aluminum gallium nitride layer together reduce the background electron concentration, and thus can reduce the high-voltage leakage risk. Description of the Drawings

[0021] Figure 1Schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure; Figure 2 is Figure 1 Schematic diagram of an epitaxial structure of a buffer layer in the semiconductor device shown; Figure 3 is Figure 2 Graph of the relationship between the aluminum composition and the thickness in the buffer layer shown; Figure 4 Another schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure; Figure 5 is Figure 1 Another schematic diagram of an epitaxial structure of a buffer layer in the semiconductor device shown; Figure 6 is Figure 5 Graph of the relationship between the aluminum composition and the thickness in the buffer layer shown; Figure 7 Another schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure; Figure 8 Another schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure. Detailed implementation manners

[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It should be noted that the implementation manners described in the present disclosure should not be construed as limited to the specific shapes of the regions shown in the present disclosure, but include deviations in shape caused by, for example, manufacturing. For example, a region illustrated or described as flat may typically have rough and / or non-linear features; the sharp corners illustrated may be rounded, etc. And the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. To keep the following description of the embodiments of the present disclosure clear and concise, the detailed descriptions of known functions and known components are omitted in the present disclosure.

[0023] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meanings as understood by those of ordinary skill in the art to which this disclosure pertains. The terms "first", "second" and similar terms used in the description and claims of this disclosure do not denote any order, quantity or importance, but are only used to distinguish different components. Words such as "comprising" or "including" mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items. Words such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Words such as "inner", "outer", "upper", "lower", etc. are only used to indicate relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0024] In the following description, when an element or layer is referred to as being "on" or "connected to" another element or layer, the element or layer may be directly on the other element or layer, directly connected to the other element or layer, or there may be intervening elements or layers. When an element or layer is referred to as being "disposed on one side of" another element or layer, the element or layer may be directly on one side of the other element or layer, directly connected to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers. The term "and / or" includes any and all combinations of one or more of the associated listed items.

[0025] Figure 1 A schematic diagram of an epitaxial structure of a semiconductor device provided for an embodiment of the present disclosure Figure 2 is Figure 1 A schematic diagram of an epitaxial structure of a buffer layer in the semiconductor device shown. As Figure 1 and Figure 2 shown, a semiconductor device provided for an embodiment of the present disclosure may include: A substrate 101, which may be a silicon substrate, a silicon carbide substrate, a sapphire substrate, etc.

[0026] A nucleation layer 102, located on one side of the substrate 101, and the material of the nucleation layer 102 may be GaN or AlN.

[0027] A channel layer 103, located on the side of the nucleation layer 102 away from the substrate 101, and the material of the channel layer 103 may be GaN.

[0028] A barrier layer 104, located on the side of the channel layer 103 away from the nucleation layer 102, and the material of the barrier layer 104 may be Al x Ga1-x N, where the Al component x is 15% - 35%, such as 20%, 25%, 30%, etc.

[0029] The buffer layer 105 is located between the nucleation layer 102 and the channel layer 103. The buffer layer 105 includes a doped superlattice layer 1051. The doped superlattice layer 1051 includes a carbon-doped aluminum gallium nitride layer BFL1 and a p-type polarization-doped aluminum gallium nitride layer BFL2. Optionally, the carbon-doped aluminum gallium nitride layer BFL1 is located between the p-type polarization-doped aluminum gallium nitride layer BFL2 and the nucleation layer 102, or the carbon-doped aluminum gallium nitride layer BFL1 is located between the p-type polarization-doped aluminum gallium nitride layer BFL2 and the channel layer 103.

[0030] In the above semiconductor device provided by the embodiments of the present disclosure, the carbon doping source of the carbon-doped aluminum gallium nitride layer BFL1 forms deep-level defects in the aluminum gallium nitride thin film to compensate for background electrons. The Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases along the growth direction to form p-type polarization doping to compensate for background electrons. Therefore, using the doped superlattice layer 1051 including the carbon-doped aluminum gallium nitride layer BFL1 and the p-type polarization-doped aluminum gallium nitride layer BFL2 as the buffer layer 105 can reduce the average carbon doping concentration of the buffer layer 105 and ensure that the buffer layer 105 has a high resistance value and a low defect density. Moreover, if the average carbon doping concentration is low, it can improve the capture of channel electrons by the carbon doping defect energy levels in the buffer layer 105 under high voltage, thereby reducing the on-resistance of the device and further improving the high-frequency electrical properties. In addition, the carbon-doped aluminum gallium nitride layer BFL1 and the p-type polarization-doped aluminum gallium nitride layer BFL2 jointly reduce the background electron concentration and thus can reduce the high-voltage leakage risk.

[0031] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, as Figure 2 shown, the doped superlattice layer 1051 may include at least one doped superlattice unit. The doped superlattice unit includes a plurality of alternately arranged carbon-doped aluminum gallium nitride layers BFL1 and p-type polarization-doped aluminum gallium nitride layers BFL2. Figure 2 Specifically shows that the doped superlattice layer 1051 includes one doped superlattice unit, and there are n alternately arranged carbon-doped aluminum gallium nitride layers BFL1 and p-type polarization-doped aluminum gallium nitride layers BFL2 in this doped superlattice unit. Figure 3 Shows Figure 2 the relationship between the Al component and the thickness of the buffer layer 105, where nh represents the sum of the thicknesses of the nth carbon-doped aluminum gallium nitride layer BFL1 and the nth p-type polarization-doped aluminum gallium nitride layer BFL2, and by Figure 3It can be seen that the Al component in each carbon-doped aluminum gallium nitride layer BFL1 is x1, and the Al component in each p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases from greater than x1 to less than x1 along the growth direction, and the average Al component in each p-type polarization-doped aluminum gallium nitride layer BFL2 is close to x1. Optionally, in the present disclosure, the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in the same doping superlattice unit are the same, and the difference between the Al component of the carbon-doped aluminum gallium nitride layer BFL1 and the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 in the same doping superlattice unit is within ±1%. The lattice mismatch between AlN and GaN is about 2.5%. The lattice mismatch of an aluminum gallium nitride layer with an Al component difference of 1% is 1% multiplied by the lattice mismatch of 2.5% between AlN and GaN, which is equal to 0.025%. Therefore, the lattice mismatch between the carbon-doped aluminum gallium nitride layer BFL1 and the adjacent p-type polarization-doped aluminum gallium nitride layer BFL2 is within 0.03%, which can reduce the occurrence of mismatch strain relaxation.

[0032] It should be noted that the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in the same doping superlattice unit in the present disclosure are the same. It can be understood that the designed values of the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in the same doping superlattice unit are the same. However, due to process conditions or other factors such as measurement, there may be some deviations between the actual Al components of the carbon-doped aluminum gallium nitride layers BFL1 in the same doping superlattice unit and the designed values. Therefore, as long as the relationship that the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in the same doping superlattice unit are the same meets the error tolerance, it belongs to the protection scope of the present disclosure.

[0033] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, when the doping superlattice layer 1051 includes multiple doping superlattice units, in order to adjust stress and improve film quality, the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in different doping superlattice units can be set differently. For example, Figure 4 shows that the doping superlattice layer 1051 provided by the embodiments of the present disclosure includes three doping superlattice units with high, medium, and low Al components whose Al components gradually decrease in the direction away from the substrate 101. For example, the Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the high Al component doping superlattice unit is 80%, and the Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually changes from 81% to 79% along the growth direction. The Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the medium Al component doping superlattice unit is 50%, and the Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually changes from 51% to 49% along the growth direction. The Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the low Al component doping superlattice unit is 20%, and the Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually changes from 21% to 19% along the growth direction.

[0034] In some embodiments, the number of carbon-doped aluminum gallium nitride layers BFL1 in the same doped superlattice unit in the present disclosure is 2 to 200, such as 50, 100, 150, etc., and the number of carbon-doped aluminum gallium nitride layers BFL1 in the same doped superlattice unit is negatively correlated with the Al component of the carbon-doped aluminum gallium nitride layer BFL1. For example, in a high-Al-component doped superlattice unit, a medium-Al-component doped superlattice unit, and a low-Al-component doped superlattice unit, there are 4 carbon-doped aluminum gallium nitride layers BFL1, 12 carbon-doped aluminum gallium nitride layers BFL1, and 15 carbon-doped aluminum gallium nitride layers BFL1 in sequence. Correspondingly, there are also 4 p-type polarization-doped aluminum gallium nitride layers BFL2, 12 p-type polarization-doped aluminum gallium nitride layers BFL2, and 15 p-type polarization-doped aluminum gallium nitride layers BFL2 alternately arranged with the carbon-doped aluminum gallium nitride layers BFL1.

[0035] In some embodiments, Figure 5 shows Figure 1 another schematic structural diagram of the buffer layer 105 in. As Figure 5 shown, the buffer layer 105 of the present disclosure may further include an aluminum nitride layer 1052. Optionally, the thickness of the aluminum nitride layer is 1 nm to 10 nm, such as 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, etc. The aluminum nitride layer 1052 can be periodically stacked with the doped superlattice layer 1051 to form a component superlattice layer as the buffer layer 105. By utilizing the high bandgap width of the aluminum nitride layer 1052, the breakdown voltage performance of the semiconductor device can be further improved. The component superlattice layer may include one or more component superlattice units. In the case where there are multiple component superlattice units, in order to adjust the stress and improve the film quality, the Al component of the carbon-doped aluminum gallium nitride layer BFL1 in different component superlattice units can be set differently, and the Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same component superlattice unit is the same.

[0036] It should be noted that the same Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same component superlattice unit in the present disclosure can be understood as that the designed value of the Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same component superlattice unit is the same. However, due to process conditions or other factors such as measurement, there may be some deviations between the actual Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same component superlattice unit and the designed value. Therefore, as long as the relationship of the same Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same component superlattice unit meets the error tolerance, it falls within the protection scope of the present disclosure.

[0037] Figure 5 shows a buffer layer 105 composed of one component superlattice unit. Continue to refer to Figure 5It can be known that the component superlattice unit may include multiple repeating layers TL. In some embodiments, the number of repeating layers TL of the component superlattice unit may be 2 to 100, such as 10, 20, 30, 40, 50, 60, 70, 80, 90, etc. The repeating layer TL includes an aluminum nitride layer 1052 and at least one doped superlattice unit. Optionally, the aluminum nitride layer 1052 may be located on one side of the doped superlattice unit close to the nucleation layer 102 or the channel layer 103. The Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units in each repeating layer TL are the same.

[0038] It should be noted that in a component superlattice unit, the Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL are the same. It can be understood that the designed values of the Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL are the same. However, due to process conditions or other factors such as measurement, there may be some deviations between the actual Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL and the designed values. Therefore, as long as the relationship that the Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL are the same meets the error tolerance, it belongs to the protection scope of the present disclosure.

[0039] Figure 5 Specifically, it shows that there are m repeating layers TL in a component superlattice unit. Figure 6 It shows Figure 5 the relationship between the Al component and the thickness in the buffer layer 105, where h3 represents the thickness of the aluminum nitride layer 1052, h1 represents the thickness of the carbon-doped aluminum gallium nitride layer BFL1, h2 represents the thickness of the p-type polarization-doped aluminum gallium nitride layer BFL2, and the thickness of a repeating layer TL is n1(h1 + h2) + h3, which is equivalent to a repeating layer TL including an aluminum nitride layer 1052 and n1 alternately arranged carbon-doped aluminum gallium nitride layers BFL1 and p-type polarization-doped aluminum gallium nitride layers BFL2, and Figure 6 it can be seen that the Al component in the carbon-doped aluminum gallium nitride layer BFL1 of each repeating layer TL is all x1, and the Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases from greater than x1 to less than x1 along the growth direction. At the same time, the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 is close to x1. For example, the difference between the Al component of the carbon-doped aluminum gallium nitride layer BFL1 and the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 in each repeating layer TL is within ±1%, which can effectively avoid mismatch defects and relaxation.

[0040] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, in order to reduce the carbon element doping concentration on the basis of maintaining the high-resistance characteristics of the buffer layer 105 and further reduce the influence of impurity defects on the high-voltage and high-frequency characteristics of the device. The present disclosure may set the Al component of the carbon-doped aluminum gallium nitride layer BFL1 to be 1% - 95%, such as 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, etc.; the carbon doping concentration of the carbon-doped aluminum gallium nitride layer BFL1 is 10 18 cm -3 ~10 20 cm -3 For example, 10 19 cm -3 etc.; the thickness of the carbon-doped aluminum gallium nitride layer BFL1 is 2 nm - 40 nm, such as 10 nm, 20 nm, 30 nm, etc.; the change range of the Al component in the p-type polarization-doped aluminum gallium nitride layer BFL2 is 1% - 10%, such as 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, etc.; the thickness of the p-type polarization-doped aluminum gallium nitride layer BFL2 is 2 nm - 40 nm, such as 10 nm, 20 nm, 30 nm, etc. And in the present disclosure, when the change of the Al component in the p-type polarization-doped aluminum gallium nitride layer BFL2 is greater than 1%, sufficient polarization intensity difference can be generated, and when the change of the Al component is less than 10%, the lattice mismatch can be ensured to be small. The thickness range of 2 nm - 40 nm can avoid too frequent growth switching due to too thin thickness and reduce the probability of generating misfit dislocations due to too thick thickness.

[0041] In some embodiments, Figure 7 and Figure 8 show another structural schematic diagram of the semiconductor device provided by the embodiments of the present disclosure. As shown in Figure 7 and Figure 8 , the semiconductor device of the present disclosure may further include a carbon-doped gallium nitride layer 106 located between the channel layer 103 and the buffer layer 105, a high-resistance aluminum gallium nitride layer 107 located between the carbon-doped gallium nitride layer 106 and the buffer layer 105, and an aluminum gallium nitride layer 108 located between the nucleation layer 102 and the buffer layer 105; wherein, the carbon-doped gallium nitride layer 106 can improve the breakdown voltage characteristics of the device and improve the crystal quality; the high-resistance aluminum gallium nitride layer 107 can be used to improve the stress control from the buffer layer 105 to the carbon-doped gallium nitride layer 106. The high-resistance aluminum gallium nitride layer 107 can achieve a high resistance value through carbon doping, and the carbon doping concentration is 10 18 cm -3 ~10 20 cm -3 For example, 10 19 cm -3 , the Al component range is 5% - 30%, such as 10%, 20%, etc.; the material of the aluminum gallium nitride layer 108 can be high-Al-component Al 0.8 Ga 0.2N.

[0042] In some embodiments, the present disclosure may further provide an insertion layer between the barrier layer 104 and the channel layer 103, and a cap layer on the barrier layer 104. Those skilled in the art should understand the other essential components in the semiconductor device, which will not be elaborated herein and should not be regarded as a limitation to the present disclosure.

[0043] The present disclosure also provides Figure 4 , Figure 7 and Figure 8 a method for manufacturing the semiconductor device shown. Among them, Figure 8 the manufacturing process of the semiconductor device shown is as follows: 1. Surface treatment of the substrate 101: The substrate 101 (such as a silicon substrate, a silicon carbide substrate, a sapphire substrate, etc.) is placed in a reaction chamber, heated to a temperature between 900 °C and 1200 °C, and hydrogen (or ammonia) is introduced to treat the surface of the substrate 101 to obtain a clean surface for subsequent epitaxy.

[0044] 2. Growth of the nucleation layer 102: The temperature of the reaction chamber is between 500 °C and 1000 °C, the pressure of the reaction chamber is in the range of 50 mbar to 500 mbar, and NH3 and an MO source (such as TMGa or TMAl) are introduced to grow a GaN or AlN nucleation layer with a thickness of 10 nm to 300 nm.

[0045] 3. Growth of the buffer layer 105 including the doped superlattice layer 1051 on the nucleation layer 102: The growth temperature range is between 900 °C and 1100 °C, the reaction chamber pressure range is 50 mbar to 200 mbar, and NH3 and an MO source (such as TMAl and TMGa) are introduced to grow an aluminum gallium nitride layer; the growth conditions of the doped superlattice layer 1051 are: 1) NH3, TMGa, TMAl, and C2H4 are introduced to grow a layer with a thickness range of 2 nm to 40 nm, an Al component concentration of 2% to 95%, and a carbon doping concentration range of 10 18 cm -3 ~ 10 20 cm -3Carbon-doped aluminum gallium nitride layer BFL1; 2) Introduce NH3, TMGa, and TMAl to grow a p-type polarization-doped aluminum gallium nitride layer BFL2 with a thickness range of 2 nm to 40 nm, and the Al component gradually decreases as the growth thickness increases. The average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 differs from the average Al component of the carbon-doped aluminum gallium nitride layer BFL1 in step 1) by less than 1%; Repeat the growth of n cycles of 1) and 2) to form a doped superlattice unit, and the range of the number of cycles n is 2 to 200; The buffer layer 105 can be: one, a doped superlattice layer composed of a doped superlattice unit with the same Al component or multiple doped superlattice units with different Al components and can be used as the buffer layer 105; two, grow a component superlattice unit with a period of m composed of a doped superlattice unit and an aluminum nitride layer 1052 with a thickness range of 1 nm to 10 nm. The range of the number of cycles m is 2 to 100, and a component superlattice layer composed of a component superlattice unit with the same Al component or multiple component superlattice units with different Al components is used as the buffer layer 105.

[0046] 4. Grow a carbon-doped gallium nitride layer 106 on the buffer layer 105: The growth temperature range is 950 °C to 1100 °C, the reaction chamber pressure range is 50 mbar to 200 mbar, and introduce NH3, TMGa, and C2H4 to grow a carbon-doped gallium nitride layer 106 with a thickness range of 100 nm to 2000 nm, which is a high-resistance layer.

[0047] 5. Grow a channel layer 103 on the carbon-doped gallium nitride layer 106: The growth temperature range is 1000 °C to 1200 °C, the reaction chamber pressure range is 100 mbar to 500 mbar, and introduce NH3 and TMGa to grow a GaN-based channel layer 103 with a thickness range of 50 nm to 500 nm.

[0048] 6. Grow a barrier layer 104 on the channel layer 103: The growth temperature range is 1000 °C to 1200 °C, the reaction chamber pressure range is 50 mbar to 500 mbar, and introduce NH3, TMGa, and TMAl to grow an AlGaN-based barrier layer 104 with a thickness range of 10 nm to 50 nm and an Al component range of 15% to 35%. Optionally, before growing the barrier layer 104, an aluminum nitride layer with a thickness range of 0.5 nm to 2 nm can be grown first by introducing NH3 and TMAl as an insertion layer; after growing the barrier layer 104, a gallium nitride layer with a thickness range of 1 nm to 10 nm can be grown again by introducing NH3 and TMGa as a cap layer.

[0049] Figure 4 The preparation process of the semiconductor device shown is as follows: 1. Substrate 101 surface treatment: Place the silicon substrate in the reaction chamber, heat the silicon substrate to between 1060 °C and introduce hydrogen for high-temperature treatment for 10 minutes. After the oxide on the surface of the silicon substrate decomposes, a Si atomic step surface for subsequent epitaxy is obtained.

[0050] 2. Growth of the nucleation layer 102: Lower the temperature of the reaction chamber to 760 °C, introduce 15 sccm of TMAl for 3 min to pre-deposit a layer of Al atoms on the surface of the silicon substrate, then introduce 1000 sccm of NH3, raise the temperature of the reaction chamber to 900 °C, introduce TMAl to grow a 20-nm AlN layer, and continue to raise the temperature to 1100 °C to grow a 200-nm AlN layer; the above 220-nm AlN layer is the nucleation layer 102.

[0051] 3. Grow a doped superlattice layer containing three different Al-component doped superlattice units on the nucleation layer 102 as the buffer layer 105: The growth temperature is 1010 °C, and the reaction chamber pressure is 60 mbar. ① Grow the doped superlattice unit with 80% Al component: The NH3 flow rate is 2000 sccm, introduce the TMAl flow rate of 700 sccm, the TMGa flow rate of 25 sccm, and the C2H4 flow rate of 150 sccm, grow a 25-nm carbon-doped Al 0.8 Ga 0.2 N layer in 160 s, then close the C2H4 source, introduce a gradually changing TMAl flow rate from 717.5 sccm to 682.5 sccm and a gradually changing TMGa flow rate from 22.5 sccm to 27.5 sccm, grow a 25-nm p-type polarization-doped aluminum gallium nitride layer (corresponding to the Al component gradually changing from 81% to 79%) in 160 s, and repeat the growth of the above carbon-doped Al 0.8 Ga 0.2 N layer and p-type polarization-doped aluminum gallium nitride layer to form a doped superlattice unit with a high Al component; ② Grow the doped superlattice unit with 50% Al component: The NH3 flow rate is 2000 sccm, introduce the TMAl flow rate of 500 sccm, the TMGa flow rate of 75 sccm, and the C2H4 flow rate of 250 sccm, grow a 25-nm carbon-doped Al 0.5 Ga 0.5 N layer in 75 s, then close the C2H4 source, introduce a gradually changing TMAl flow rate from 510 sccm to 490 sccm and a gradually changing TMGa flow rate from 73.5 sccm to 76.5 sccm, grow a 30-nm p-type polarization-doped aluminum gallium nitride layer (corresponding to the Al component gradually changing from 51% to 49%) in 90 s, and repeat the growth of the above carbon-doped Al 0.5 Ga 0.5The doping superlattice unit of Al composition in the formation of N layer and p-type polarization-doped aluminum gallium nitride layer; ③ Growing the doping superlattice unit with 20% Al composition: the NH3 flow rate is 3000 sccm, the flow rate of TMAl is 600 sccm, the flow rate of TMGa is 320 sccm, the flow rate of C2H4 is 350 sccm, and 30 nm of carbon-doped Al 0.2 Ga 0.8 N layer is grown, then the C2H4 source is turned off, and the gradually changing flow rate of TMAl is from 570 sccm to 630 sccm, and the gradually changing flow rate of TMGa is from 316 sccm to 324 sccm. A 35 nm p-type polarization-doped aluminum gallium nitride layer (corresponding to the Al composition gradually changing from 21% to 19%) is grown in 63 s, and the above-mentioned carbon-doped Al 0.2 Ga 0.8 N layer and p-type polarization-doped aluminum gallium nitride layer form a doping superlattice unit with a low Al composition; the total thickness of the buffer layer 105 including three doping superlattice units is 1985 nm.

[0052] 4. Growing a carbon-doped gallium nitride layer 106 on the buffer layer 105: the growth temperature is 1000 °C, the reaction chamber pressure is 100 mbar, NH3 is introduced at 10000 sccm, the flow rate of TMGa is 310 sccm, the flow rate of C2H4 is 200 sccm, and a 1500 nm thick high-resistance carbon-doped gallium nitride layer 106 is grown.

[0053] 5. Growing a channel layer 103 on the carbon-doped gallium nitride layer 106: the growth temperature is 1060 °C, the reaction chamber pressure is 200 mbar, the flow rate of NH3 introduced is 30000 sccm, the flow rate of TMGa is 200, and a 300 nm thick gallium nitride channel layer 103 is grown.

[0054] 6. Growing a barrier layer 104 on the channel layer 103: the growth temperature is 1060 °C, the pressure of the reaction chamber is 75 mbar, NH3 is introduced at 45000 sccm, the flow rate of TMAl is 200 sccm, and a 1 nm thick AlN layer is grown as an insertion layer, and then the flow rate of TMGa is 115 sccm and TMAl is 200 sccm to grow an Al 0.2 Ga 0.8 N material barrier layer 104, and finally a 2 nm thick GaN material cap layer is grown.

[0055] Figure 7 The preparation process of the semiconductor device shown is as follows: 1. Surface treatment of the substrate 101: Place the silicon substrate into the reaction chamber, heat the substrate to a temperature between 1050 °C and introduce hydrogen for high-temperature treatment for 15 minutes. After the decomposition of the oxide on the surface of the silicon substrate, a Si atomic step surface for subsequent epitaxy is obtained.

[0056] 2. Growth of the nucleation layer 102: Lower the temperature of the reaction chamber to 760 °C, introduce 10 sccm of TMAl for 5 minutes to pre-deposit a layer of Al atoms on the surface of the silicon substrate, then introduce 1000 sccm of NH3, raise the temperature of the reaction chamber to 900 °C, introduce TMAl to grow a 25-nm AlN layer, and continue to raise the temperature to 1100 °C to grow a 220-nm AlN layer; the above 225-nm AlN layer is the nucleation layer 102.

[0057] 3. Growth of the aluminum gallium nitride layer 108 on the nucleation layer 102: The growth temperature is 1000 °C, the pressure in the reaction chamber is 50 mbar, the flow rate of NH3 is 1500 sccm, the flow rate of TMAl introduced is 650 sccm, the flow rate of TMGa is 25 sccm, and grow for 640 s to grow a 100-nm high-Al component Al 0.8 Ga 0.2 N layer as the aluminum gallium nitride layer 108.

[0058] 4. Growth of a composition superlattice layer containing doped superlattice units on the aluminum gallium nitride layer 108 as the buffer layer 105: The growth temperature is 1000 °C, the pressure in the reaction chamber is 55 mbar. ① Grow a 5-nm aluminum nitride layer 1052. Specifically, the flow rate of NH3 is 13000 sccm, the flow rate of TMAl introduced is 340 sccm, and grow a 5-nm aluminum nitride layer 1052 in 60 s; ② Grow doped superlattice units with an average Al composition of 40%: The flow rate of NH3 is 10000 sccm, the flow rate of TMAl introduced is 340 sccm, the flow rate of TMGa is 75 sccm, the flow rate of C2H4 is 240 sccm, and grow a 5-nm carbon-doped Al 0.4 Ga 0.6 N layer. Then close the C2H4 source, introduce a gradually changing TMAl flow rate from 340 sccm to 331.7 sccm, and a gradually changing TMGa flow rate from 73.17 sccm to 75 sccm, and grow for 21.8 s to grow a 6-nm p-type polarization-doped aluminum gallium nitride layer (corresponding to the Al composition gradually changing from 40.6% to 39.4%). Repeat the growth of the above carbon-doped Al 0.4 Ga 0.6 N layer and p-type polarization-doped aluminum gallium nitride layer to form a doped superlattice unit; repeat the growth of the above aluminum nitride layer 1052 and doped superlattice unit for 29 cycles to obtain a 1100-nm-thick composition-doped superlattice layer as the buffer layer 105.

[0059] 5. Grow a high-resistivity aluminum gallium nitride layer 107 on the buffer layer 105: The growth temperature is 1000 °C, the reaction chamber pressure is 50 mbar, the NH3 flow rate is 3000 sccm, the TMAl flow rate is 600 sccm, the TMGa flow rate is 320 sccm, the C2H4 flow rate is 350 sccm, and grow 1000 nm of carbon-doped Al 0.2 Ga 0.8 N as the high-resistivity aluminum gallium nitride layer 107.

[0060] 6. Grow a carbon-doped gallium nitride layer 106 on the high-resistivity aluminum gallium nitride layer 107: The growth temperature is 1000 °C, the reaction chamber pressure is 100 mbar, the NH3 introduced is 10000 sccm, the TMGa flow rate is 310 sccm, the C2H4 flow rate is 200 sccm, and grow a 1200-nm-thick high-resistivity GaN layer as the carbon-doped gallium nitride layer 106.

[0061] 7. Grow a channel layer 103 on the carbon-doped gallium nitride layer 106. The growth temperature is 1050 °C, the reaction chamber pressure is 200 mbar, the NH3 flow rate introduced is 30000 sccm, the TMGa flow rate is 200, and grow a 250-nm-thick GaN channel layer 103.

[0062] 8. Grow a barrier layer 104 on the channel layer 103: The growth temperature is 1060 °C, the pressure of the reaction chamber is 75 mbar, introduce NH3 of 45000 sccm, the TMAl flow rate is 260 sccm, grow a 1-nm-thick AlN layer as the insertion layer, then introduce a TMGa flow rate of 105 sccm and TMAl of 200 sccm to grow a 20-nm-thick Al 0.25 Ga 0.75 material barrier layer 104, and finally grow a 2-nm-thick GaN capping layer.

[0063] Based on the same inventive concept, the embodiments of the present disclosure provide an electronic device, including the above semiconductor device provided by the embodiments of the present disclosure. Since the principle of the electronic device to solve problems is similar to the principle of the above semiconductor device to solve problems, therefore, the implementation of the electronic device provided by the embodiments of the present disclosure can refer to the implementation of the above semiconductor device provided by the embodiments of the present disclosure, and the repeated parts will not be described again.

[0064] In some embodiments, the above-mentioned electronic devices provided by the embodiments of the present disclosure may include, but are not limited to: radio frequency amplifiers, mixers, radars, satellites, power supplies, automotive electronics, energy-saving lamps, household appliances, etc. Of course, in addition to semiconductor devices, the electronic devices provided by the present disclosure may also include other structures. For example, when the electronic device is a radar, it further includes structures such as a transmitter, an antenna, a receiver, etc.; when the electronic device is a mixer, it may further include structures such as an input port and an output port.

[0065] Although the preferred embodiments of the present disclosure have been described, those skilled in the art can make additional changes and modifications to these embodiments once they learn the basic creative concept. Therefore, the appended claims are intended to be construed as including the preferred embodiments as well as all changes and modifications that fall within the scope of the present disclosure.

[0066] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present disclosure without departing from the spirit and scope of the embodiments of the present disclosure. Thus, if these modifications and variations of the embodiments of the present disclosure fall within the scope of the claims of the present disclosure and their equivalent technologies, the present disclosure is also intended to include these modifications and variations.

Claims

1. A semiconductor device, characterized in that, Comprising: A substrate; A nucleation layer located on one side of the substrate; A channel layer located on the side of the nucleation layer away from the substrate; A barrier layer located on the side of the channel layer away from the nucleation layer; A buffer layer located between the nucleation layer and the channel layer, the buffer layer comprising a doped superlattice layer, the doped superlattice layer comprising a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

2. The semiconductor device according to claim 1, characterized in that, The doped superlattice layer comprises at least one doped superlattice unit, the doped superlattice unit comprising a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and p-type polarization-doped aluminum gallium nitride layers, and the aluminum component of the carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is the same.

3. The semiconductor device according to claim 2, wherein, There are a plurality of the doped superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different doped superlattice units are different.

4. The semiconductor device according to claim 3, wherein, In the direction away from the substrate, the aluminum component of the carbon-doped aluminum gallium nitride layers in different doped superlattice units gradually decreases.

5. The semiconductor device according to claim 2, characterized in that, The number of carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is 2 to 200.

6. The semiconductor device according to claim 1, wherein, The buffer layer further comprises an aluminum nitride layer, and the aluminum nitride layer and the doped superlattice layer are periodically stacked to form a component superlattice layer as the buffer layer.

7. The semiconductor device according to claim 6, wherein, The doped superlattice layer comprises at least one doped superlattice unit, the doped superlattice unit comprising a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and p-type polarization-doped aluminum gallium nitride layers; The component superlattice layer comprises at least one component superlattice unit, the component superlattice unit comprising a plurality of repeating layers, the repeating layer comprising one aluminum nitride layer and at least one doped superlattice unit, and the aluminum component of the carbon-doped aluminum gallium nitride layers in each repeating layer is the same.

8. The semiconductor device according to claim 7, wherein, There are a plurality of the component superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different component superlattice units are different.

9. The semiconductor device according to claim 7, wherein The thickness of the aluminum nitride layer is 1 nm to 10 nm, and the number of repeating layers of one component superlattice layer is 2 to 100.

10. The semiconductor device according to any one of claims 1 to 9, characterized in that, The difference between the aluminum component of the adjacent carbon-doped aluminum gallium nitride layer and the average aluminum component of the p-type polarization-doped aluminum gallium nitride layer is within ±1%.

11. The semiconductor device according to any one of claims 1 to 9, characterized in that, The change range of the aluminum component in the p-type polarization-doped aluminum gallium nitride layer is 1% to 10%.

12. The semiconductor device according to any one of claims 1 to 9, characterized in that, The aluminum component of the carbon-doped aluminum gallium nitride layer is 1% to 95%, and the carbon doping concentration is 10 18 cm -3 ~10 20 cm -3 。 13. The semiconductor device according to any one of claims 1 to 9, characterized in that, The thickness of the carbon-doped aluminum gallium nitride layer is 2 nm to 40 nm, and the thickness of the p-type polarization-doped aluminum gallium nitride layer is 2 nm to 40 nm.

14. An electronic device, characterized in that, Including the semiconductor device according to any one of claims 1 to 13.

Images