Transparent display device

Abstract

A transparent display device according to an exemplary embodiment of the present disclosure includes a substrate in which a plurality of sub-pixels including a transmission region and an emission region may be defined, a driving transistor disposed in the emission region, an organic light emitting diode connected to the driving transistor; and an anode connection line extending from the semiconductor layer of the driving transistor to the transmission region and connected to an anode of the organic light emitting diode. Therefore, the aperture opening ratio and transparency can be improved.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0194827, filed with the Korean Intellectual Property Office on December 28, 2023, the disclosure of which is incorporated herein by reference. Technical field

[0003] The present disclosure relates to a transparent display device, and more particularly, to a transparent display device that can improve the aperture ratio and transparency. Background art

[0004] An organic light - emitting display device is a self - emitting display device and, unlike a liquid - crystal display device, does not require a separate light source. Therefore, an organic light - emitting display device can be manufactured in a light - weight and thin form. In addition, an organic light - emitting display device is not only advantageous in terms of power consumption by being driven at a low voltage, but also has excellent response speed, viewing angle, and contrast.

[0005] An attempt has been made to manufacture such an organic light - emitting display device as a transparent organic light - emitting display device, that is, a transparent display device. The pixel region of the transparent organic light - emitting display device is divided into an emission region and a transmission region. In the emission region, an organic light - emitting diode emits light to display an image, and the transmission region transmits external light. The transparency of the transparent organic light - emitting display device is ensured through the transmission region. At the same time, in the pixel region, the emission region and the transmission region are in a trade - off relationship, that is, an increase in the emission region decreases the transmission region, and an increase in the transmission region decreases the emission region. Thus, it is difficult to increase the aperture ratio of the emission region. Therefore, research has continued to increase the aperture ratio of the emission region without reducing the transmission region in the transparent display device. Summary of the invention

[0006] An object to be achieved by the present disclosure is to provide a transparent display device that can repair a failure or defect of a sub - pixel when detected.

[0007] Another object to be achieved by the present disclosure is to provide a transparent display device that can improve the aperture ratio and transparency.

[0008] The objects of the present disclosure are not limited to the above - mentioned objects, and other objects not mentioned above can be clearly understood by those skilled in the art from the following description.

[0009] A transparent display device according to an exemplary embodiment of the present disclosure includes a substrate in which a plurality of sub-pixels including a transmissive region and an emissive region can be defined, a driving transistor disposed in the emissive region, an organic light emitting diode connected to the driving transistor, and an anode connection line extending from a semiconductor layer of the driving transistor to the transmissive region and connected to an anode of the organic light emitting diode.

[0010] Other details of the exemplary embodiments are included in the detailed description and the drawings.

[0011] According to the present disclosure, a repair portion is provided to perform repair when a failure or defect of a sub-pixel is detected.

[0012] According to the present disclosure, instead of a metal wire, an oxide semiconductor layer is used as a wire for repair. In addition, repair is performed by irradiating a laser from below the substrate. Therefore, the aperture ratio and transparency can be improved.

[0013] The effects according to the present disclosure are not limited to those illustrated above, and more various effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The above and other aspects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0015] Figure 1 is a block diagram for explaining a transparent display device according to an exemplary embodiment of the present disclosure;

[0016] Figure 2 is a schematic circuit diagram of a sub-pixel according to an exemplary embodiment of the present disclosure;

[0017] Figure 3 is a detailed circuit diagram of a sub-pixel according to an exemplary embodiment of the present disclosure;

[0018] Figure 4 is a plan view of a transparent display device according to a first exemplary embodiment of the present disclosure;

[0019] Figure 5 is Figure 4 an enlarged view of a first repair portion of

[0020] Figure 6A and Figure 6B is Figure 5 a cross-sectional view taken along line A-A of

[0021] Figure 7 is Figure 4 an enlarged view of a second repair portion of

[0022] Figure 8 isFigure 7 Cross-sectional view taken along line B-B;

[0023] Figure 9 is a plan view of a transparent display device according to a second exemplary embodiment of the present disclosure;

[0024] Figure 10 is Figure 9 an enlarged view of a first repair portion;

[0025] Figure 11 is along Figure 10 cross-sectional view taken along line X-X';

[0026] Figure 12A and Figure 12B is along Figure 10 cross-sectional view taken along line C-C;

[0027] Figure 13 is Figure 9 an enlarged view of a second repair portion; and

[0028] Figure 14 is along Figure 13 cross-sectional view taken along line D-D. DETAILED DESCRIPTION

[0029] Advantages and features of the present disclosure and methods for achieving these advantages and features will be clear by referring to the exemplary embodiments described in detail below and the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only as examples so that those skilled in the art can fully understand the content disclosed by the present disclosure and the scope of the present disclosure.

[0030] Shapes, sizes, ratios, angles, quantities, etc. shown in the drawings used to describe the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Throughout the specification, the same reference numerals generally denote the same elements. In addition, in the following description of the present disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily making the subject matter of the present disclosure difficult to understand. Terms such as "including", "having", and "consisting of" used herein are generally intended to allow the addition of other components, unless these terms are used together with the term "only". Any reference to the singular may include the plural unless otherwise explicitly stated.

[0031] Even if not explicitly stated, components are interpreted as including a normal error range.

[0032] When terms such as "on", "above", "below", and "adjacent" are used to describe the positional relationship between two parts, one or more parts may be located between these two parts, unless these terms are used together with the terms "against" or "directly".

[0033] When an element or layer is disposed "on" another element or layer, an additional layer or additional element may be directly inserted on or between the other element.

[0034] Although terms such as "first" and "second" are used when describing various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component to be mentioned below may be the second component in the technical concept of the present disclosure.

[0035] Throughout the specification, like reference numerals generally denote like elements.

[0036] For ease of description, the dimensions and thicknesses of each component shown in the drawings are illustrated, and the present disclosure is not limited to the dimensions and thicknesses of the components shown.

[0037] The features of the various embodiments of the present disclosure may be partially or completely attached to or combined with each other, may be interlocked and operated in various ways technically, and the embodiments may be executed independently of or in association with each other.

[0038] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the drawings.

[0039] Figure 1 is a block diagram for explaining a transparent display device according to an exemplary embodiment of the present disclosure.

[0040] Reference Figure 1 , the transparent display device may include an image processor 151, a timing controller 152, a data driver 153, a scan driver 154, and a display panel 150.

[0041] The image processor 151 may output a data enable signal DE together with a data signal DATA provided from the outside.

[0042] In addition, for example, in addition to the data enable signal DE, the image processor 151 may also output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal.

[0043] The timing controller 152 may receive a data enable signal DE or a data signal DATA from the image processor 151, as well as drive signals including a vertical synchronization signal, a horizontal synchronization signal, a clock signal, etc. The timing controller 152 may output a gate timing control signal GDC for controlling the operation timing of the scan driver 154 and a data timing control signal DDC for controlling the operation timing of the data driver 153 based on the drive signals.

[0044] The data driver 153 may sample and latch the data signal DATA received from the timing controller 152 in response to the data timing control signal DDC received from the timing controller 152. In addition, the data driver 153 may convert the sampled and latched data signal DATA into a gamma reference voltage. The data driver 153 may output the data signal DATA through data lines DL1 to DLn. The data driver 153 may be configured in the form of an integrated circuit (IC).

[0045] The scan driver 154 may output a scan signal in response to the gate timing control signal GDC received from the timing controller 152. The scan driver 154 may output the scan signal through gate lines GL1 to GLm. The scan driver 154 may be configured in the form of an integrated circuit (IC), or may be mounted on the display panel 150 in a gate-in-panel (GIP) manner.

[0046] The display panel 150 may display an image in response to the data signal DATA and the scan signal received from the data driver 153 and the scan driver 154, respectively.

[0047] The display panel 150 may include a plurality of sub-pixels SP to display an image.

[0048] For example, the sub-pixel SP may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, or may include a white sub-pixel, a red sub-pixel, a green sub-pixel, and a blue sub-pixel. In addition, depending on the emission characteristics, the sub-pixel SP may have one or more different emission regions.

[0049] Figure 2 is a schematic circuit diagram of a sub-pixel according to an exemplary embodiment of the present disclosure.

[0050] Reference Figure 2 , each sub-pixel may include a switching transistor SW, a driving transistor DR, a capacitor Cst, a compensation circuit CC, and an organic light emitting diode OLED.

[0051] The switching transistor SW can perform a switching operation in response to a scan signal provided through the first gate line GL1, such that a data signal provided through the data line DL is stored as a data voltage in the capacitor Cst. The driving transistor DR enables a driving current to flow between the power supply line EVDD (high-potential voltage) and the cathode power supply line EVSS (low-potential voltage) based on the data voltage stored in the capacitor Cst. The organic light-emitting diode OLED can emit light according to the driving current generated by the driving transistor DR.

[0052] The compensation circuit CC is a circuit added to the sub-pixel and compensates for the threshold voltage of the driving transistor DR. The compensation circuit CC includes one or more transistors. The configuration of the compensation circuit CC can be changed differently according to an external compensation method and will be described below.

[0053] Figure 3 is a detailed circuit diagram of a sub-pixel according to an exemplary embodiment of the present disclosure.

[0054] Reference Figure 3 , the compensation circuit CC can include, for example, a sensing transistor ST and a sensing line (or reference line) VREF.

[0055] Herein, the sensing transistor ST can be connected between the source electrode of the driving transistor DR and the anode of the organic light-emitting diode OLED (hereinafter, referred to as the “sensing node”). The sensing transistor ST can operate to provide an initialization voltage (or sensing voltage) transmitted through the sensing line VREF to the sensing node of the driving transistor DR. In addition, the sensing transistor ST can operate to sense the voltage or current of the sensing node or the sensing line VREF of the driving transistor DR.

[0056] The source electrode or the drain electrode of the switching transistor SW can be connected to the data line DL1. The other of the source electrode and the drain electrode of the switching transistor SW can be connected to the gate electrode of the driving transistor DR.

[0057] The source electrode or the drain electrode of the driving transistor DR can be connected to the power supply line EVDD. The other of the source electrode and the drain electrode of the driving transistor DR can be connected to the first electrode of the organic light-emitting diode OLED as the anode.

[0058] In addition, the lower electrode of the capacitor Cst can be connected to the gate electrode of the driving transistor DR, and the upper electrode of the capacitor Cst can be connected to the anode of the organic light-emitting diode OLED. The first electrode of the organic light-emitting diode OLED can be connected to the other of the source electrode and the drain electrode of the driving transistor DR. In addition, the second electrode of the organic light-emitting diode OLED as the cathode can be connected to the second power supply line EVSS.

[0059] The source electrode or the drain electrode of the sensing transistor ST may be connected to the sensing line VREF. The other of the source electrode and the drain electrode of the sensing transistor ST may be connected to the other of the first electrode of the organic light-emitting diode OLED corresponding to the sensing node and the source electrode and the drain electrode of the driving transistor DR.

[0060] According to an external compensation algorithm (or the configuration of the compensation circuit), the operation time of the sensing transistor ST may be similar (or the same) or different from the operation time of the switching transistor SW. For example, the gate electrode of the switching transistor SW may be connected to the first gate line GL1, and the gate electrode of the sensing transistor ST may be connected to the second gate line GL2. Herein, a scan signal Scan may be transmitted to the first gate line GL1, and a sensing signal Sense may be transmitted to the second gate line GL2. As another example, the first gate line GL1 connected to the gate electrode of the switching transistor SW and the second gate line GL2 connected to the gate electrode of the sensing transistor ST may be connected so that they can be shared.

[0061] The sensing line VREF may be connected to the data driver. In this case, the data driver may sense the sensing node of the subpixel in real time or during a non-display period of an image or N periods (N is an integer equal to or greater than 1) and generate a sensing result.

[0062] Meanwhile, the switching transistor SW and the sensing transistor ST may be turned on simultaneously. In this case, the sensing operation through the sensing line VREF and the data output operation for outputting a data signal are separated (or distinguished) from each other in a time-division manner of the data driver.

[0063] In addition, a digital data signal, an analog data signal, a gamma signal, etc. may be compensated according to the sensing result. A compensation circuit for generating a compensation signal (or a compensation voltage) based on the sensing result may be implemented inside the data driver, inside the timing controller, or inside a separate circuit.

[0064] As described above, Figure 3 A subpixel having, for example, a 3T (transistor) 1C (capacitor) structure is shown, which includes a switching transistor SW, a driving transistor DR, a capacitor Cst, an organic light-emitting diode OLED, and a sensing transistor ST. However, when a compensation circuit CC is added to the subpixel, the subpixel may have various structures, such as 3T2C, 4T2C, 5T1C, and 6T2C.

[0065] Figure 4 is a plan view of a transparent display device according to a first exemplary embodiment of the present disclosure.

[0066] Figure 5 isFigure 4 An enlarged view of the first repair portion.

[0067] Figure 6A and Figure 6B is a cross-sectional view taken along line A-A of Figure 5 the line A-A of

[0068] Figure 7 is Figure 4 An enlarged view of the second repair portion of

[0069] Figure 8 is taken along line B-B of Figure 7 the line B-B of

[0070] Figure 6A shows an example of the laser repair process of the first repair portion RP1, and Figure 6B is a cross-sectional view of the first repair portion RP1 after the laser repair process.

[0071] Referring to Figure 4 , for example, the gate line GL may intersect the first data lines DL1 to DL4 to define the first sub-pixels SPn1 to SPn4 in the transparent display device 100 according to the first exemplary embodiment of the present disclosure.

[0072] Each of the first sub-pixels SPn1 to SPn4 may include two emission regions EMA1 and EMA2 (i.e., the first emission region EMA1 and the second emission region EMA2) and one transmission region TA.

[0073] For example, the first sub-pixels SPn1 to SPn4 respectively connected to the first data lines DL1 to DL4 may be commonly connected to the sense line VREF. The sense line VREF may be connected to the first sub-pixel SPn1 and the third sub-pixel SPn3 through the first sense connection line 135a. In addition, the sense line VREF may be connected to the second sub-pixel SPn2 and the fourth sub-pixel SPn4 through the second sense connection line 135b.

[0074] Herein, the first sense connection line 135a and the second sense connection line 135b may be connected to each other, but the present disclosure is not limited thereto. In addition, the first sense connection line 135a and the second sense connection line 135b may be disposed on the gate wiring layer. However, the present disclosure is not limited thereto. Herein, the gate wiring layer may be the same layer as the layer on which the gate line GL is disposed.

[0075] In addition, the power supply line EVDD can be disposed on one side of the first sub-pixel SPn1 and the second sub-pixel SPn2. For example, the first sub-pixel SPn1 to the fourth sub-pixel SPn4 can be connected to the power supply line EVDD through the power connection line EVC. In addition, the cathode power supply line EVSS can be disposed on one side of the third sub-pixel SPn3 and the fourth sub-pixel SPn4, and is connected to a second electrode (not shown) serving as a cathode.

[0076] In each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4, the first anode ANO1 is disposed in the first emission region EMA1, and the second anode ANO2 is disposed in the second emission region EMA2 to constitute the first electrode ANO of the organic light-emitting diode OLED. For example, the first anode ANO1 and the second anode ANO2 are connected to each other to constitute the first electrode ANO in each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0077] The driving transistor DR, the capacitor Cst, the sensing transistor ST, and the switching transistor SW can be disposed in each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4. The first emission region EMA1 can overlap with the driving transistor DR, and the second emission region EMA2 can overlap with the sensing transistor ST and the switching transistor SW.

[0078] The sensing line VREF can be connected to the sensing transistor ST of each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 through the first sensing connection line 135a and the second sensing connection line 135b. The power supply line EVDD can be connected to the driving transistor DR of each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 through the power connection line EVC.

[0079] The gate line GL can be connected to each of the sensing transistor ST and the switching transistor SW of the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0080] Meanwhile, as described above, the cathode power supply line EVSS can be disposed to apply a low potential voltage to the second electrode.

[0081] Herein, the cathode power supply line EVSS can be electrically connected to the cathode connection line 139 through a contact hole. The cathode connection line 139 can extend to the transmission region TA. The cathode connection line 139 can be disposed on the gate wiring layer.

[0082] For example, the cathode connection line 139 extending to the transmission region TA can be electrically connected to the cathode contact portion CAC through a contact hole.

[0083] In addition, for example, the cathode contact portion CAC can be electrically connected to the second electrode through the cathode contact hole CH_2. The cathode contact portion CAC can be disposed on the source / drain wiring layer. The cathode contact portion CAC is used to reduce the resistance by applying a low potential voltage to the second electrode. In this document, the cathode contact hole CH_2 can be referred to as the second contact hole.

[0084] The first electrode ANO can include a first anode ANO1 and a second anode ANO2. The first anode ANO1 and the second anode ANO2 can be connected to each other through the anode connection line 130. The anode connection line 130 can extend from the source electrode or the drain electrode of the driving transistor DR and can branch toward the first anode ANO1 and the second anode ANO2 in the transmissive region TA. For example, each of the first anode ANO1 and the second anode ANO2 can be electrically connected to the anode connection electrode AP through the anode contact hole CH_1.

[0085] The first repair portion RP1 can be disposed in the region where the first anode ANO1 and the second anode ANO2 of the first electrode ANO are connected to each other.

[0086] When one of the emission regions EMA1 and EMA2 fails due to foreign matter that may be generated during processing, the first repair portion RP1 can repair the sub-pixels SPn1 to SPn4 by disconnecting CL of the first anode ANO1 of the first emission region EMA1 or the second anode ANO2 of the second emission region EMA2. In this case, the other of the emission regions EMA1 and EMA2 that is not short-circuited can operate normally.

[0087] In addition, the second repair portion RP2 can be disposed in the region where the first sensing connection line 135a and the second sensing connection line 135b connected to the sensing line VREF branch to the first sub-pixel SPn1 to the fourth sub-pixel SPn4. When one of the emission regions EMA1 and EMA2 of the sub-pixels SPn1 to SPn4 fails due to a short circuit of the first sensing connection line 135a or the second sensing connection line 135b that may occur during processing, the second repair portion RP2 can repair the pixels SPn1 to SPn4 by disconnecting CL of the first sensing connection line 135a or the second sensing connection line 135b. The second repair portion RP2 can be disposed in the region where the sensing line VREF is connected to the first sensing connection line 135a and the second sensing connection line 135b and the first sub-pixel SPn1 to the fourth sub-pixel SPn4 are adjacent to each other.

[0088] In addition, the third repair portion RP3 can be disposed in each of the regions where the gate line GL branches to the first sub-pixel SPn1 and the second sub-pixel SPn2 and the regions where the gate line GL branches to the third sub-pixel SPn3 and the fourth sub-pixel SPn4. When one of the emission regions EMA1 and EMA2 of the sub-pixels SPn1 to SPn4 fails due to a short circuit of the branched gate line GL that may occur during processing, the third repair portion RP3 can repair the first sub-pixel SPn1 to the fourth sub-pixel SPn4 by disconnecting a part of the branched gate line GL, CL. The third repair portion RP3 can be disposed in the regions where the gate line GL branches to the first sub-pixel SPn1 and the second sub-pixel SPn2 or the third sub-pixel SPn3 and the fourth sub-pixel SPn4 and the first sub-pixel SPn1 and the second sub-pixel SPn2 or the third sub-pixel SPn3 and the fourth sub-pixel SPn4 are adjacent to each other.

[0089] In addition, the fourth repair portion RP4 can be disposed at the upper ends of the first sub-pixel SPn1 and the third sub-pixel SPn3 or at the lower ends of the second sub-pixel SPn2 and the fourth sub-pixel SPn4, where the power connection line EVC is connected to the power supply line EVDD. When one of the emission regions EMA1 and EMA2 of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 fails due to a short circuit of the power connection line EVC that may occur during processing, the fourth repair portion RP4 can repair the first sub-pixel SPn1 to the fourth sub-pixel SPn4 by disconnecting the power connection line EVC, CL.

[0090] As described above, the first electrode ANO can branch into the first anode ANO1 of the first emission region EMA1 and the second anode ANO2 of the second emission region EMA2 to provide the first repair portion RP1. Details of the first repair portion RP1 will be described below.

[0091] Reference Figures 4 to 6A and Figure 6B , a light-shielding layer can be disposed on the substrate 110.

[0092] The light-shielding layer can be used to block the introduction of external light and suppress the generation of photocurrent in the thin film transistor.

[0093] The data lines DL1 to DL4, the power supply line EVDD, the sense line VREF, and the cathode power supply line EVSS can be disposed on the same layer as the light-shielding layer.

[0094] The buffer layer 125 can be disposed on the substrate 110 on which the light-shielding layer, the data lines DL1 to DL4, the power supply line EVDD, the sense line VREF, and the cathode power supply line EVSS are disposed. The buffer layer 125 is used to protect the thin film transistor formed in the subsequent process from impurities such as alkali ions released from the light-shielding layer.

[0095] For example, the buffer layer 125 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multi-layer thereof.

[0096] The semiconductor layer of the driving transistor DR may be disposed on the buffer layer 125, and the lower capacitor electrode may be disposed to be spaced apart from the semiconductor layer.

[0097] The semiconductor layers of the sensing transistor ST and the switching transistor SW may be respectively disposed on the same layer as the semiconductor layer of the driving transistor DR. However, the present disclosure is not limited thereto.

[0098] The semiconductor layer and the lower capacitor electrode may be made of a silicon semiconductor or an oxide semiconductor. In addition, the silicon semiconductor may include amorphous silicon or polycrystalline silicon.

[0099] In addition, the semiconductor layer may include a drain region and a source region containing p-type or n-type impurities, and a channel region between the drain region and the source region. The lower capacitor electrode may also be doped with impurities to become conductive. However, the present disclosure is not limited thereto.

[0100] The gate insulating film may be disposed on the semiconductor layer and the lower capacitor electrode. For example, the gate insulating film may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multi-layer thereof.

[0101] The gate electrode of the driving transistor DR may be disposed on the gate insulating film in a predetermined region of the semiconductor layer, that is, at a position corresponding to the channel when impurities are implanted.

[0102] The gate electrodes of the sensing transistor ST and the switching transistor SW and the gate line GL may be disposed on the same layer as the gate electrode of the driving transistor DR. In addition, the source electrode and the drain electrode of the driving transistor DR may be disposed on the same layer as the gate electrode of the driving transistor DR. In addition, the source electrodes and the drain electrodes of the sensing transistor ST and the switching transistor SW may be respectively disposed on the same layer as the gate electrode of the driving transistor DR. However, the present disclosure is not limited thereto.

[0103] The gate electrode, the gate line, the source electrode, and the drain electrode may be made of one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. For example, the gate electrode, the gate line, the source electrode, and the drain electrode may be composed of a multi-layer made of one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. For example, the gate electrode, the gate line, the source electrode, and the drain electrode may be made of a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

[0104] In this document, the driving transistor DR may be composed of a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. In addition, the lower capacitor electrode and the drain electrode serving as the upper capacitor electrode may form the capacitor Cst.

[0105] The interlayer insulating film 145 may be provided on the substrate 110 including the driving transistor DR and the capacitor Cst.

[0106] For example, the interlayer insulating film 145 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

[0107] The anode connection line 130 may be provided on the interlayer insulating film 145.

[0108] For example, the anode connection line 130 may be composed of a single layer or multiple layers.

[0109] For example, the anode connection line 130 may be connected to the source electrode or the drain electrode of the driving transistor DR. In addition, the anode connection line 130 may extend to the first repair portion RP1 and may branch in the first repair portion RP1 toward the first anode ANO1 and the second anode ANO2.

[0110] The passivation film 160 may be provided on the substrate 110 including the anode connection line 130. The passivation film 160 is an insulating film for protecting the underlying components and may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

[0111] The outer coating 165 may be provided on the passivation film 160.

[0112] The outer coating 165 may be a planarization film for reducing the step difference on the underlying structure and may be made of an organic material such as polyimide, benzocyclobutene series resin, acrylate, etc.

[0113] For example, the outer coating 165 may be formed by a spin-on glass (SOG) method for coating a liquid organic material and then curing the organic material.

[0114] The organic light-emitting diode may be provided on the outer coating 165.

[0115] More specifically, the first electrode ANO may be provided on the outer coating 165. The first electrode ANO serves as a pixel electrode and may be connected to the source electrode or the drain electrode of the driving transistor DR through the anode connection line 130 connected to the first electrode ANO.

[0116] The first electrode ANO may include a first anode ANO1 and a second anode ANO2. The first anode ANO1 and the second anode ANO2 may be connected to each other through an anode connection line 130. Each of the first anode ANO1 and the second anode ANO2 may be electrically connected to the anode connection line 130 through, for example, an anode contact hole CH_1.

[0117] The first electrode ANO may be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). For example, the transparent display device 100 according to the present disclosure has a top emission structure, and the first electrode ANO may be constituted by a reflective electrode. Accordingly, the first electrode ANO may further include a reflective layer. For example, the reflective layer may be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof. Desirably, the reflective layer may be made of an Ag / Pd / Cu (APC) alloy.

[0118] In addition, a bank layer 180 that defines the first sub-pixels SPn1 to the fourth sub-pixels SPn4 may be provided on the substrate 110 including the first electrode ANO.

[0119] For example, the bank layer 180 may be made of an organic material, such as polyimide, benzocyclobutene-based resin, acrylate, etc.

[0120] An emission layer in contact with the first electrode ANO may be provided on the entire surface of the substrate 110. The emission layer is a layer in which electrons and holes recombine to emit light. A hole injection layer or a hole transport layer may be provided between the emission layer and the first electrode ANO. An electron transport layer or an electron injection layer may be provided on the emission layer.

[0121] A second electrode may be provided on the emission layer. The second electrode is a cathode and may be located on the entire surface of the display portion. In addition, the second electrode may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof, each having a low work function. The second electrode may be a transmissive electrode and may be thin enough to transmit light. In addition, for example, the second electrode may be a transmissive electrode and may be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0122] As described above, in the first exemplary embodiment of the present disclosure, the source electrode or the drain electrode of the driving transistor DR may be connected to the first anode ANO1 and the second anode ANO2 through the anode connection line 130. For example, the anode connection line 130 may be connected to the drain electrode through a via hole formed in the passivation film 160 and the outer coating 165. In this way, the anode connection line 130 connected to the source electrode or the drain electrode of the driving transistor DR may extend to the first repair portion RP1. As Figure 4and Figure 5 As shown, the anode connection line 130 can branch toward the first anode ANO1 and the second anode ANO2 in the first repair portion RP1. Herein, when one of the emission regions EMA1 and EMA2 fails due to foreign matter that may be generated during processing, the first repair portion RP1 can short-circuit (CL) the first anode ANO1 or the second anode ANO2 to repair the first emission region EMA1 or the second emission region EMA2.

[0123] For example, in the first exemplary embodiment of the present disclosure, a part of the anode connection line 130 can be short-circuited (CL) by irradiating a laser from above the first sub-pixel SPn1 to the fourth sub-pixel SPn4. Herein, the short circuit (CL) refers to a physical short circuit of the anode connection line 130 caused by irradiating the anode connection line 130 with a laser and causing the anode connection line 130 to burst. Referring to Figure 6B , it can be seen that after the laser irradiation, the central portion of the anode connection line 130 bursts and disconnects. As a result, it can be seen that the passivation film 160, the outer coating 165, and the bank layer 180 on the anode connection line 130 protrude upward.

[0124] For example, a laser with a wavelength of 532 nm or 1064 nm can be used. However, the present disclosure is not limited thereto.

[0125] For example, if the first emission region EMA1 of the first sub-pixel SPn1 becomes dark, the part of the anode connection line 130 that branches toward the first anode ANO1 can be short-circuited (CL). In addition, if the second emission region EMA2 of the first sub-pixel SPn1 becomes dark, the part of the anode connection line 130 that branches toward the second anode ANO2 can be short-circuited (CL). In addition, for example, if both the first emission region EMA1 and the second emission region EMA2 of the first sub-pixel SPn1 become dark, a part of the anode connection line 130 before branching toward the first anode ANO1 and the second anode ANO2 can be short-circuited (CL).

[0126] As described above, in the first exemplary embodiment of the present disclosure, the first repair portion RP1 is provided. Therefore, when some emission regions EMA1 and EMA2 of some of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 fail, only the failed emission regions EMA1 and EMA2 can be darkened.

[0127] However, in the first exemplary embodiment of the present disclosure, the first anode ANO1 and the second anode ANO2 of the metal layer cannot be disposed on the anode connection line 130 to be repaired by irradiating a laser from above the first sub-pixel SPn1 to the fourth sub-pixel SPn4. Therefore, the loss of the transmission region TA may occur in proportion to the width W1 of the space where the first anode ANO1 and the second anode ANO2 cannot be disposed.

[0128] In addition, the first repair portion RP1 is spaced apart from the power supply line EVDD by a predetermined distance. Therefore, the loss of the transmission region TA can occur in proportion to the distance L1.

[0129] As described above, in the first exemplary embodiment of the present disclosure, the second repair portion RP2 can be provided to repair the first sub-pixel SPn1 to the fourth sub-pixel SPn4 that have failed due to a short circuit of the first sensing connection line 135a or the second sensing connection line 135b.

[0130] Reference Figure 4 、 Figure 7 and Figure 8 , a light-shielding layer can be disposed on the substrate 110.

[0131] The data lines DL1 to DL4, the power supply line EVDD, the sensing line VREF, and the cathode power supply line EVSS can be disposed on the same layer as the light-shielding layer.

[0132] The buffer layer 125 can be disposed on the substrate 110 on which the light-shielding layer, the data lines DL1 to DL4, the power supply line EVDD, the sensing line VREF, and the cathode power supply line EVSS are disposed.

[0133] The semiconductor layer of the driving transistor DR can be disposed on the buffer layer 125, and the lower capacitor electrode can be disposed to be spaced apart from the semiconductor layer.

[0134] The semiconductor layers ST_A and SW_A of the sensing transistor ST and the switching transistor SW can be respectively disposed on the same layer as the semiconductor layer of the driving transistor DR. However, the present disclosure is not limited thereto.

[0135] The gate insulating film can be disposed on the semiconductor layer and the lower capacitor electrode.

[0136] The gate electrode of the driving transistor DR can be disposed on the gate insulating film in a predetermined region of the semiconductor layer, that is, at a position corresponding to the channel when impurities are implanted.

[0137] The gate electrodes of the sensing transistor ST and the switching transistor SW and the gate line GL may be provided on the same layer as the gate electrode of the driving transistor DR. In addition, the source electrode and the drain electrode of the driving transistor DR may be provided on the same layer as the gate electrode of the driving transistor DR. In addition, the source electrodes ST_S and SW_S and the drain electrodes of the sensing transistor ST and the switching transistor SW may be respectively provided on the same layer as the gate electrode of the driving transistor DR. However, the present disclosure is not limited thereto. In addition, the first sensing connection line 135a and the second sensing connection line 135b may be provided on the same layer as the gate electrode of the driving transistor DR.

[0138] For example, the source electrode ST_S of the sensing transistor ST may be electrically connected to the semiconductor layer ST_A of the sensing transistor ST through the source contact hole CH_3. In addition, the source electrode SW_S of the switching transistor SW may be electrically connected to the semiconductor layer SW_A of the switching transistor SW through the source contact hole CH_4. In addition, the source electrode SW_S of the switching transistor SW of the first sub-pixel SPn1 may be electrically connected to the second data line DL2 through the source contact hole CH_4. In addition, the source electrode SW_S of the switching transistor SW of the third sub-pixel SPn3 may be electrically connected to the third data line DL3 through the source contact hole CH_4. For example, the source electrode SW_S of the switching transistor SW of the second sub-pixel SPn2 may be electrically connected to the first data line DL1 through the source contact hole CH_4. In addition, the source electrode SW_S of the switching transistor SW of the fourth sub-pixel SPn4 may be electrically connected to the fourth data line DL4 through the source contact hole CH_4. The source contact hole CH_3 of the sensing transistor ST may be referred to as the third contact hole, and the source contact hole CH_4 of the switching transistor SW may be referred to as the fourth contact hole.

[0139] For example, the first sensing connection line 135a and the second sensing connection line 135b may be electrically connected to the sensing line VREF through the sensing line contact hole CH_5. In addition, the first sensing connection line 135a and the second sensing connection line 135b may be connected to each other. However, the present disclosure is not limited thereto. The sensing line contact hole CH_5 may be referred to as the fifth contact hole.

[0140] For example, the sensing line VREF may be connected to the first sub-pixel SPn1 and the third sub-pixel SPn3 through the first sensing connection line 135a. In addition, the sensing line VREF may be connected to the second sub-pixel SPn2 and the fourth sub-pixel SPn4 through the second sensing connection line 135b.

[0141] In addition, for example, the source electrodes ST_S of the sensing transistors ST of the first sub-pixel SPn1 and the third sub-pixel SPn3 may extend and form a first sensing connection line 135a. In addition, the source electrodes ST_S of the sensing transistors ST of the second sub-pixel SPn2 and the fourth sub-pixel SPn4 may extend and form a second sensing connection line 135b.

[0142] In addition, an interlayer insulating film 145 may be disposed on the substrate 110 including the driving transistor DR, the capacitor Cst, the switching transistor SW, the first sensing connection line 135a, and the second sensing connection line 135b.

[0143] A passivation film 160 may be disposed on the interlayer insulating film 145.

[0144] An outer coating 165 may be disposed on the passivation film 160.

[0145] An organic light-emitting diode may be disposed on the outer coating 165.

[0146] A bank layer 180 defining the first sub-pixel SPn1 to the fourth sub-pixel SPn4 may be disposed on the substrate 110 including the first electrode ANO of the organic light-emitting diode.

[0147] As described above, in the first exemplary embodiment of the present disclosure, a second repair portion RP2 may be disposed in a region where each of the first sensing connection line 135a and the second sensing connection line 135b connected to the sensing line VREF branches to the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0148] When one of the emission regions EMA1 and EMA2 of the sub-pixels SPn1 to SPn4 fails due to a short circuit of the first sensing connection line 135a or the second sensing connection line 135b that may occur during processing, the second repair portion RP2 may short-circuit (CL) the first sensing connection line 135a or the second sensing connection line 135b to short-circuit the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0149] For example, in the first exemplary embodiment of the present disclosure, a part of the first sensing connection line 135a or a part of the second sensing connection line 135b may be short-circuited (CL) by irradiating a laser from above the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0150] For example, a laser having a wavelength of 532 nm or 1064 nm may be used. However, the present disclosure is not limited thereto.

[0151] In this document, for example, if the second emission region EMA2 of the first sub-pixel SPn1 or the second emission region EMA2 of the third sub-pixel SPn3 becomes dim, a part of the first sensing connection line 135a can be short-circuited (CL). In addition, if the first emission region EMA1 of the second sub-pixel SPn2 or the first emission region EMA1 of the fourth sub-pixel SPn4 becomes dim, a part of the second sensing connection line 135b can be short-circuited (CL).

[0152] As described above, in the first exemplary embodiment of the present disclosure, the second repair portion RP2 is provided. Therefore, when some emission regions EMA1 and EMA2 of some of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 malfunction, only the malfunctioning emission regions EMA1 and EMA2 can be dimmed.

[0153] However, in the first exemplary embodiment of the present disclosure, the first anode ANO1 and the second anode ANO2 of the metal layer cannot be provided on the first sensing connection line 135a and the second sensing connection line 135b to be repaired by irradiating a laser from above the first sub-pixel SPn1 to the fourth sub-pixel SPn4. Therefore, a loss of the aperture ratio may occur in proportion to the corresponding area.

[0154] Therefore, in the second exemplary embodiment of the present disclosure, instead of a metal wire, an oxide semiconductor layer is used as the wire for repair. Therefore, the repair is performed by irradiating a laser from below the sub-pixel. Therefore, the aperture ratio and transparency can be improved. Details thereof will be described below with reference to the drawings.

[0155] Figure 9 is a plan view of a transparent display device according to the second exemplary embodiment of the present disclosure.

[0156] Figure 10 is Figure 9 an enlarged view of the first repair portion.

[0157] Figure 11 is along Figure 10 a cross-sectional view taken along the line X-X' of.

[0158] Figure 12A and Figure 12B is along Figure 10 a cross-sectional view taken along the line C-C of.

[0159] Figure 13 is Figure 9 an enlarged view of the second repair portion.

[0160] Figure 14 is along Figure 13 a cross-sectional view taken along the line D-D of.

[0161] In this document, Figure 12A an example of a laser repair process of a first repair portion RP1 is shown, and Figure 12B is a cross-sectional view of the first repair portion RP1 after the laser repair process.

[0162] In addition to the first repair portion RP1 and the second repair portion RP2, Figures 9 to 14 a transparent display device 200 according to a second exemplary embodiment of the present disclosure is Figures 4 to 8 substantially the same as a first exemplary embodiment of the present disclosure.

[0163] Referring to Figure 9 , for example, a gate line GL may intersect with first to fourth data lines DL1 to DL4 to define first to fourth sub-pixels SPn1 to SPn4 in a transparent display device 200 according to a second exemplary embodiment of the present disclosure.

[0164] Each of the first to fourth sub-pixels SPn1 to SPn4 may include two emission regions EMA1 and EMA2 (i.e., a first emission region EMA1 and a second emission region EMA2) and one transmission region TA.

[0165] For example, the first to fourth sub-pixels SPn1 to SPn4 respectively connected to the first to fourth data lines DL1 to DL4 may be commonly connected to a sense line VREF. The sense line VREF may be connected to the first sub-pixel SPn1 and the third sub-pixel SPn3 through a first sense connection line 235a. In addition, the sense line VREF may be connected to the second sub-pixel SPn2 and the fourth sub-pixel SPn4 through a second sense connection line 235b.

[0166] In addition, the first sense connection line 235a and the second sense connection line 235b may be connected to each other, but the present disclosure is not limited thereto. In addition, the first sense connection line 235a and the second sense connection line 235b may be disposed on a semiconductor layer. However, the present disclosure is not limited thereto. In this document, the semiconductor layer may be the same layer as the semiconductor layer on which transistors DR, ST, and SW are disposed.

[0167] In addition, the power supply line EVDD can be disposed on one side of the first sub-pixel SPn1 and the second sub-pixel SPn2. Specifically, it is disposed on one side of the emission regions EMA1 and EMA2 of the first sub-pixel SPn1 and the second sub-pixel SPn2. For example, the first sub-pixel SPn1 to the fourth sub-pixel SPn4 can be connected to the power supply line EVDD through the power connection line EVC. In addition, the cathode power supply line EVSS can be disposed on one side of the third sub-pixel SPn3 and the fourth sub-pixel SPn4. Specifically, it is disposed on one side of the emission regions EMA1 and EMA2 of the third sub-pixel SPn3 and the fourth sub-pixel SPn4. In addition, the cathode power supply line EVSS can be connected to a second electrode (not shown) serving as a cathode.

[0168] In each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4, a first anode ANO1 is disposed in the first emission region EMA1, and a second anode ANO2 is disposed in the second emission region EMA2 to constitute the first electrode ANO of the organic light-emitting diode. For example, the first anode ANO1 and the second anode ANO2 are connected to each other to constitute the first electrode ANO in each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0169] The driving transistor DR, the capacitor Cst, the sensing transistor ST, and the switching transistor SW can be disposed in each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4. The first emission region EMA1 can overlap with the driving transistor DR, and the second emission region EMA2 can overlap with the sensing transistor ST and the switching transistor SW. However, the present disclosure is not limited thereto.

[0170] The sensing line VREF can be connected to the sensing transistor ST of each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 through the first sensing connection line 235a and the second sensing connection line 235b.

[0171] In addition, the power supply line EVDD can be connected to the driving transistor DR of each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 through the power connection line EVC.

[0172] The gate line GL can be connected to each of the sensing transistor ST and the switching transistor SW of the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0173] Meanwhile, as described above, the cathode power supply line EVSS can be arranged to apply a low-potential voltage to the second electrode.

[0174] In this document, the cathode power supply line EVSS can be electrically connected to the cathode connection line 239 through a contact hole. The cathode connection line 239 can extend to the transmission area TA. The cathode connection line 239 can be disposed on the gate wiring layer. However, the present disclosure is not limited thereto.

[0175] For example, the cathode connection line 239 extending to the transmission area TA can be electrically connected to the cathode contact portion CAC through a contact hole.

[0176] In addition, for example, the cathode contact portion CAC can be electrically connected to the second electrode through the cathode contact hole CH_2. The cathode contact portion CAC can be disposed on the source / drain wiring layer. The cathode contact portion CAC is used to reduce the resistance by applying a low potential voltage to the second electrode. In this document, the cathode contact hole CH_2 can be referred to as the second contact hole.

[0177] The first electrode ANO can include a first anode ANO1 and a second anode ANO2. Each of the first anode ANO1 and the second anode ANO2 can be connected to the first anode connection line 230a and the second anode connection line 230b. In addition, for example, the first anode ANO1 and the second anode ANO2 can be connected to each other through the first anode connection line 230a and the second anode connection line 230b connected to the source electrode or the drain electrode DR_D of the driving transistor DR.

[0178] The first anode connection line 230a and the second anode connection line 230b can be disposed on the semiconductor layer. However, the present disclosure is not limited thereto. In addition, the first anode connection line 230a and the second anode connection line 230b can extend from the semiconductor layer DR_A of the driving transistor DR to the transmission area TA. In addition, the first anode connection line 230a and the second anode connection line 230b can be electrically connected to the first anode ANO1 and the second anode ANO2 through the anode contact holes CH_1, respectively. In this document, the anode contact hole CH_1 can be referred to as the first contact hole. In addition, the first anode connection line 230a and the second anode connection line 230b disposed on the semiconductor layer can be made of a transparent material.

[0179] The first repair portion RP1 can be disposed in the region where the first anode ANO1 and the second anode ANO2 of the first electrode ANO are connected to the first anode connection line 230a and the second anode connection line 230b.

[0180] When one of the emission areas EMA1 and EMA2 malfunctions due to foreign substances that may be generated during processing, the first repair portion RP1 can short-circuit the first anode ANO1 of the first emission area EMA1 or the second anode ANO2 of the second emission area EMA2 to repair the sub-pixels SPn1 to SPn4. In this case, the other of the emission areas EMA1 and EMA2 that is not short-circuited can operate normally.

[0181] In addition, the second repair portion RP2 can be disposed in an area where the first sensing connection line 235a and the second sensing connection line 235b connected to the sensing line VREF branch to the first sub-pixel SPn1 to the fourth sub-pixel SPn4. When one of the emission areas EMA1 and EMA2 of the sub-pixels SPn1 to SPn4 malfunctions due to a short circuit of the first sensing connection line 235a or the second sensing connection line 235b that may occur during processing, the second repair portion RP2 can short-circuit (CL) the first sensing connection line 235a or the second sensing connection line 235b to short-circuit the first sub-pixel SPn1 to the fourth sub-pixel SPn4. Therefore, the second repair portion RP2 can be disposed in an area where the sensing line VREF is connected to the first sensing connection line 235a and the second sensing connection line 235b and the first sub-pixel SPn1 to the fourth sub-pixel SPn4 are adjacent to each other.

[0182] In addition, the third repair portion RP3 can be disposed in each of an area where the gate line GL branches to the first sub-pixel SPn1 and the second sub-pixel SPn2 and an area where the gate line GL branches to the third sub-pixel SPn3 and the fourth sub-pixel SPn4. When one of the emission areas EMA1 and EMA2 of the sub-pixels SPn1 to SPn4 malfunctions due to a short circuit of the branched gate line GL that may occur during processing, the third repair portion RP3 can short-circuit (CL) a part of the branched gate line GL to short-circuit the first sub-pixel SPn1 to the fourth sub-pixel SPn4. The third repair portion RP3 can be disposed in an area where the gate line GL branches to the first sub-pixel SPn1 and the second sub-pixel SPn2 or branches to the third sub-pixel SPn3 and the fourth sub-pixel SPn4 and the first sub-pixel SPn1 and the second sub-pixel SPn2 or the third sub-pixel SPn3 and the fourth sub-pixel SPn4 are adjacent to each other.

[0183] In addition, the fourth repair portion RP4 may be disposed at the upper ends of the first sub-pixel SPn1 and the third sub-pixel SPn3 where the power connection line EVC is connected to the power supply line EVDD, or at the lower ends of the second sub-pixel SPn2 and the fourth sub-pixel SPn4. When one of the emission regions EMA1 and EMA2 of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 fails due to a short circuit of the power connection line EVC that may occur during processing, the fourth repair portion RP4 can short-circuit the first sub-pixel SPn1 to the fourth sub-pixel SPn4 by short-circuiting (CL) the power connection line EVC.

[0184] As described above, the first repair portion RP1 may be disposed in the region where the first anode ANO1 and the second anode ANO2 are connected to the first anode connection line 230a and the second anode connection line 230b. Details of the first repair portion RP1 will be described below.

[0185] Reference Figures 9 to 1 2, the light-shielding layer LS may be disposed on the substrate 210.

[0186] The light-shielding layer LS can be used to block the introduction of external light and suppress the generation of photocurrent in the thin-film transistor.

[0187] The data lines DL1 to DL4, the power supply line EVDD, the sense line VREF, and the cathode power supply line EVSS may be disposed on the same layer as the light-shielding layer LS.

[0188] The buffer layer 225 may be disposed on the substrate 210 on which the light-shielding layer LS, the data lines DL1 to DL4, the power supply line EVDD, the sense line VREF, and the cathode power supply line EVSS are disposed. The buffer layer 225 is used to protect the thin-film transistor formed in the subsequent process from impurities such as alkali ions released from the light-shielding layer LS.

[0189] For example, the buffer layer 225 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multi-layer thereof.

[0190] The semiconductor layer DR_A of the driving transistor DR may be disposed on the buffer layer 225.

[0191] The semiconductor layers of the sense transistor ST and the switching transistor SW may be respectively disposed on the same layer as the semiconductor layer DR_A of the driving transistor DR.

[0192] For example, the semiconductor layer DR_A of the driving transistor DR can extend toward the first repair portion RP1 and form the first anode connection line 230a and the second anode connection line 230b. The first anode connection line 230a and the second anode connection line 230b can be electrically connected to the first anode ANO1 and the second anode ANO2, respectively. That is, for example, the first anode connection line 230a and the second anode connection line 230b can extend from the semiconductor layer DR_A of the driving transistor DR to the transmission region TA. In addition, the first anode connection line 230a and the second anode connection line 230b can be electrically connected to the first anode ANO1 and the second anode ANO2 through the anode contact holes CH_1, respectively.

[0193] For example, the semiconductor layer DR_A, the first anode connection line 230a, and the second anode connection line 230b can be made of a silicon semiconductor or an oxide semiconductor. The silicon semiconductor can include amorphous silicon or polycrystalline silicon.

[0194] In addition, the semiconductor layer DR_A can include a drain region and a source region containing p-type or n-type impurities, and a channel region between the drain region and the source region. The first anode connection line 230a and the second anode connection line 230b can be doped with impurities to become conductive. However, the present disclosure is not limited thereto.

[0195] The gate insulating film can be disposed on the semiconductor layer DR_A, the first anode connection line 230a, and the second anode connection line 230b.

[0196] For example, the gate insulating film can be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multi-layer thereof.

[0197] For example, the gate electrode of the driving transistor DR can be disposed on the gate insulating film in a predetermined region of the semiconductor layer DR_A, that is, at a position corresponding to the channel when impurities are implanted.

[0198] The gate electrodes of the sensing transistor ST and the switching transistor SW and the gate line GL can be disposed on the same layer as the gate electrode of the driving transistor DR. In addition, the source electrode and the drain electrode DR_D of the driving transistor DR can be disposed on the same layer as the gate electrode of the driving transistor DR. In addition, the source electrodes and the drain electrodes of the sensing transistor ST and the switching transistor SW can be disposed on the same layer as the gate electrode of the driving transistor DR, respectively. However, the present disclosure is not limited thereto. Herein, for example, the drain electrode DR_D of the driving transistor DR can extend to overlap with the light shielding layer LS and form a capacitor Cst together with the light shielding layer LS. However, the present disclosure is not limited thereto.

[0199] For example, the source electrode or the drain electrode DR_D of the driving transistor DR can be electrically connected to the first anode connection line 230a and the second anode connection line 230 through the sixth contact hole CH_6. Therefore, the first anode ANO1 and the second anode ANO2 can be connected to each other through the source electrode or the drain electrode DR_D of the driving transistor DR connected to the first anode connection line 230a and the second anode connection line 230b.

[0200] For example, the gate electrode, the gate line GL, the source electrode, and the drain electrode DR_D can be made of one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or their alloys. In addition, for example, the gate electrode, the gate line GL, the source electrode, and the drain electrode DR_D can be composed of a multilayer made of one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or their alloys. For example, the gate electrode, the gate line GL, the source electrode, and the drain electrode DR_D can be made of a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

[0201] In this document, the driving transistor DR can be composed of a semiconductor layer DR_A, a gate electrode, a source electrode, and a drain electrode DR_D.

[0202] The interlayer insulating film 245 can be provided on the substrate 210 including the driving transistor DR and the capacitor Cst.

[0203] For example, the interlayer insulating film 245 can be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

[0204] The passivation film 260 can be provided on the interlayer insulating film 245. For example, the passivation film 260 is an insulating film for protecting the underlying components and can be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

[0205] The outer coating 265 can be provided on the passivation film 260.

[0206] The outer coating 265 can be a planarization film for reducing the step difference on the underlying structure and can be made of an organic material, such as polyimide, benzocyclobutene series resin, acrylate, etc.

[0207] For example, the outer coating 265 can be formed by a spin-on glass (SOG) method for coating a liquid organic material and then curing the organic material.

[0208] The organic light-emitting diode OLED can be provided on the outer coating 265.

[0209] More specifically, the first electrode ANO can be disposed on the outer coating 265. The first electrode ANO serves as a pixel electrode. The first electrode ANO can be connected to the source electrode or the drain electrode DR_D of the driving transistor DR through the first anode connection line 230a and the second anode connection line 230b connected to the first electrode ANO. For example, the second anode connection line 230b can be connected to the first sensing connection line 235a or the second sensing connection line 235b through the sensing transistor ST, but is not limited thereto.

[0210] The first electrode ANO can include a first anode ANO1 and a second anode ANO2. The first anode ANO1 and the second anode ANO2 can be connected to each other through the first anode ANO1 and the second anode ANO2 connected to the source electrode or the drain electrode DR_D of the driving transistor DR. Each of the first anode ANO1 and the second anode ANO2 can be electrically connected to the first anode connection line 230a and the second anode connection line 230b through, for example, an anode contact hole CH_1. Herein, the anode contact hole CH_1 can be referred to as the first contact hole.

[0211] The first electrode ANO can be made of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). For example, the transparent display device 200 according to the present disclosure has a top emission structure, and the first electrode ANO can be constituted by a reflective electrode. Therefore, the first electrode ANO can further include a reflective layer. For example, the reflective layer can be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof. Desirably, the reflective layer can be made of an Ag / Pd / Cu (APC) alloy.

[0212] In addition, the bank layer 280 that defines the first sub-pixel SPn1 to the fourth sub-pixel SPn4 can be disposed on the substrate 210 including the first electrode ANO.

[0213] For example, the bank layer 280 can be made of an organic material, such as polyimide, benzocyclobutene series resin, acrylate, etc.

[0214] The emission layer EML in contact with the first electrode ANO can be disposed on the entire surface of the substrate 110. The emission layer EML is a layer in which electrons and holes recombine to emit light. A hole injection layer or a hole transport layer can be disposed between the emission layer EML and the first electrode ANO. An electron transport layer or an electron injection layer can be disposed on the emission layer EML.

[0215] The second electrode CAT may be disposed on the emission layer EML. The second electrode CAT is a cathode and may be located on the entire surface of the display portion. Further, the second electrode CAT may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof, each having a low work function. The second electrode CAT may be a transmissive electrode and may be thin enough to transmit light.

[0216] As described above, in the second exemplary embodiment of the present disclosure, the source electrode or the drain electrode DR_D of the driving transistor DR may be connected to the first anode ANO1 and the second anode ANO2 through the first anode connection line 230a and the second anode connection line 230b, respectively. For example, the source electrode or the drain electrode DR_D of the driving transistor DR may be electrically connected to the first anode connection line 230a and the second anode connection line 230b through a sixth contact hole CH_6 formed in the interlayer insulating film 245. The first anode connection line 230a and the second anode connection line 230b connected to the source electrode or the drain electrode DR_D of the driving transistor DR may extend to the first repair portion RP1 in the transmissive area TA. As Figure 9 and Figure 10 shown, the first anode connection line 230a and the second anode connection line 230b may be electrically connected to the first anode ANO1 and the second anode ANO2, respectively, in the first repair portion RP1. Herein, when one of the emission areas EMA1 and EMA2 fails due to foreign matter that may be generated during processing, the first repair portion RP1 may short-circuit the first anode ANO1 or the second anode ANO2 to repair the first emission area EMA1 or the second emission area EMA2.

[0217] For example, in the second exemplary embodiment of the present disclosure, a part of the first anode connection line 230a or a part of the second anode connection line 230b may be electrically short-circuited (CL) by irradiating a laser from below the substrate 210. Herein, the electrical short-circuit (CL) means that the first anode connection line 230a or the second anode connection line 230b is made non-conductive by irradiating the first anode connection line 230a or the second anode connection line 230b with a specific laser and increasing the resistance of the first anode connection line 230a or the second anode connection line 230b made of an oxide semiconductor. Referring to Figure 12B it can be seen that the first anode connection line 230a becomes non-conductive after laser irradiation, and an air gap is formed between the passivation film 260 and the outer coating 265. Further, it can be seen that the outer coating 265 and the bank layer 280 on the repair area have a flat surface without any change.

[0218] For example, a laser with a wavelength of 256 nm may be used. However, the present disclosure is not limited thereto.

[0219] For example, if the first emission area EMA1 of the first sub-pixel SPn1 darkens, a portion of the first anode connection line 230 electrically connected to the first anode ANO1 can be short-circuited (CL). In addition, if the second emission area EMA2 of the first sub-pixel SPn1 darkens, a portion of the second anode connection line 230b connected to the second anode ANO2 can be short-circuited (CL). Further, for example, if both the first emission area EMA1 and the second emission area EMA2 of the first sub-pixel SPn1 darken, a portion of the first anode connection line 230a and a portion of the second anode connection line 230b can be short-circuited (CL).

[0220] As described above, in the second exemplary embodiment of the present disclosure, the first repair portion RP1 is provided. Thus, when some emission areas EMA1 and EMA2 of some of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 malfunction, only the malfunctioning emission areas EMA1 and EMA2 can be darkened.

[0221] In addition, in the second exemplary embodiment of the present disclosure, a laser is irradiated from below the substrate 210. Thus, the first anode ANO1 and the second anode ANO2 of the metal layer can be provided on the first anode connection line 230a and the second anode connection line 230b to be repaired. Therefore, the width W2 between the first anode ANO1 and the second anode ANO2 can be reduced.

[0222] In addition, in the second exemplary embodiment of the present disclosure, the first repair portion RP1 is provided to partially overlap with the power supply line EVDD. Therefore, the distance L2 can be reduced. Therefore, it can be seen that in the second exemplary embodiment of the present disclosure, the transmission area TA increases proportionally with the width difference (W1 - W2) and the distance difference (L1 - L2), which results in an increase in transparency of approximately 0.9%. Further, for example, the first repair portion RP1 can partially overlap with the bank layer 280. Further, for example, the first repair portion RP1 can partially overlap with the black matrix.

[0223] As described above, in the second exemplary embodiment of the present disclosure, the second repair portion RP2 can be provided to repair the first sub-pixel SPn1 to the fourth sub-pixel SPn4 that malfunction due to a short circuit of the first sensing connection line 235a or the second sensing connection line 235b.

[0224] Reference Figure 9 、 Figure 10 、 Figure 13 and Figure 14 ,a light-shielding layer LS can be provided on the substrate 210.

[0225] The data lines DL1 to DL4, the power line EVDD, the sense line VREF, and the cathode power line EVSS may be disposed on the same layer as the light-shielding layer LS.

[0226] The buffer layer 225 may be disposed on the substrate 210 on which the light-shielding layer LS, the data lines DL1 to DL4, the power line EVDD, the sense line VREF, and the cathode power line EVSS are disposed.

[0227] The semiconductor layer of the driving transistor DR may be disposed on the buffer layer 225.

[0228] The semiconductor layer ST_A of the sensing transistor ST and the semiconductor layer SW_A of the switching transistor SW may be disposed on the same layer as the semiconductor layer of the driving transistor DR.

[0229] For example, the semiconductor layer ST_A of the sensing transistor ST may extend toward the second repair portion RP2 and form the first sensing connection line 235a and the second sensing connection line 235b.

[0230] For example, the first sensing connection line 235a and the second sensing connection line 235b may be electrically connected to the sense line VREF through the sense line contact hole CH_5. In addition, the first sensing connection line 235a and the second sensing connection line 235b may be connected to each other. However, the present disclosure is not limited thereto.

[0231] For example, the sense line VREF may be connected to the first sub-pixel SPn1 and the third sub-pixel SPn3 through the first sensing connection line 235a. In addition, the sense line VREF may be connected to the second sub-pixel SPn2 and the fourth sub-pixel SPn4 through the second sensing connection line 235b.

[0232] In addition, the first sensing connection line 235a and the second sensing connection line 235b may be disposed on the semiconductor layer. In addition, the first sensing connection line 235a and the second sensing connection line 235b disposed on the semiconductor layer may be made of a transparent material.

[0233] For example, the semiconductor layers ST_A and SW_A, the first sensing connection line 235a, and the second sensing connection line 235b may be made of a silicon semiconductor or an oxide semiconductor. The silicon semiconductor may include amorphous silicon or polysilicon.

[0234] In addition, the first sensing connection line 235a and the second sensing connection line 235b may be doped with impurities to become conductive. However, the present disclosure is not limited thereto.

[0235] Then, the interlayer insulating film 245 may be disposed on the semiconductor layers ST_A and SW_A, the first sensing connection line 235a, and the second sensing connection line 235b.

[0236] The passivation film 260 may be disposed on the interlayer insulating film 245.

[0237] The outer coating 265 may be disposed on the passivation film 260.

[0238] The organic light emitting diode OLED may be disposed on the outer coating 265.

[0239] More specifically, the first electrode ANO may be disposed on the outer coating 265.

[0240] The first electrode ANO may include a first anode ANO1 and a second anode ANO2. The first anode ANO1 and the second anode ANO2 are disposed in each of the first sub-pixel SPn1 to the fourth sub-pixel SPn4. The first anode ANO1 and the second anode ANO2 may also be disposed on the first sensing connection line 235a and the second sensing connection line 235b so as to overlap with the first sensing connection line 235a and the second sensing connection line 235b.

[0241] The bank layer 280 defining the first sub-pixel SPn1 to the fourth sub-pixel SPn4 may be disposed on the substrate 210 including the first electrode ANO of the organic light emitting diode OLED.

[0242] As described above, in the second exemplary embodiment of the present disclosure, the second repair portion RP2 may be disposed in a region where each of the first sensing connection line 235a and the second sensing connection line 235b connected to the sensing line VREF branches to the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0243] When one of the emission regions EMA1 and EMA2 of the sub-pixels SPn1 to SPn4 fails due to a short circuit of the first sensing connection line 235a or the second sensing connection line 235b that may occur during processing, the second repair portion RP2 may short-circuit (CL) the first sensing connection line 235a or the second sensing connection line 235b to short-circuit the first sub-pixel SPn1 to the fourth sub-pixel SPn4.

[0244] For example, in the second exemplary embodiment of the present disclosure, a part of the first sensing connection line 235a or a part of the second sensing connection line 235b may be electrically short-circuited (CL) by irradiating a laser from below the substrate 210. As described above, the electrical short circuit (CL) means that the first sensing connection line 235a or the second sensing connection line 235b is made non-conductive by irradiating the first sensing connection line 235a or the second sensing connection line 235b with a specific laser and increasing the resistance of the first sensing connection line 235a or the second sensing connection line 235b made of an oxide semiconductor.

[0245] For example, a laser with a wavelength of 256 nm can be used. However, the present disclosure is not limited thereto.

[0246] In this document, for example, if the second emission region EMA2 of the first sub-pixel SPn1 or the second emission region EMA2 of the third sub-pixel SPn3 becomes dim, a part of the first sensing connection line 235a can be short-circuited (CL). In addition, if the first emission region EMA1 of the second sub-pixel SPn2 or the first emission region EMA1 of the fourth sub-pixel SPn4 becomes dim, a part of the second sensing connection line 235b can be short-circuited (CL).

[0247] As described above, in the second exemplary embodiment of the present disclosure, the second repair portion RP2 is provided. Therefore, when some emission regions EMA1 and EMA2 of some of the first sub-pixel SPn1 to the fourth sub-pixel SPn4 malfunction, only the malfunctioning emission regions EMA1 and EMA2 can be dimmed.

[0248] In addition, in the second exemplary embodiment of the present disclosure, the laser is irradiated from below the substrate 210. Therefore, the first anode ANO1 and the second anode ANO2 of the metal layer can be provided on the first sensing connection line 235a and the second sensing connection line 235b to be repaired. Therefore, the aperture ratio can be increased in proportion to the sizes of the first anode ANO1 and the second anode ANO2. For example, in the second exemplary embodiment of the present disclosure, the repair region serves as an opening. Therefore, it can be seen that the aperture ratio is increased by about 0.5% compared with the first exemplary embodiment.

[0249] The exemplary embodiments of the present disclosure can also be described as follows:

[0250] According to an aspect of the present disclosure, a transparent display device is provided. The transparent display device includes a substrate in which a plurality of sub-pixels including a transmissive region and an emission region can be defined, a driving transistor provided in the emission region, an organic light-emitting diode connected to the driving transistor, and an anode connection line extending from a semiconductor layer of the driving transistor to the transmissive region and connected to an anode of the organic light-emitting diode.

[0251] A data line, a sensing line, a power line, and a gate line can intersect each other to define the plurality of sub-pixels, and the sub-pixels can further include at least one of a switching transistor, a sensing transistor, and a capacitor.

[0252] The emission region can include a first emission region overlapping with the driving transistor and a second emission region overlapping with the switching transistor and the sensing transistor.

[0253] The anode may include a first anode disposed in a first emission region and a second anode disposed in a second emission region, and the anode connection lines may include a first anode connection line and a second anode connection line that are respectively connected to the first anode and the second anode.

[0254] The first anode and the second anode may extend into the transmissive region, and each of the first anode connection line and the second anode connection line may be connected to the drain electrode of the driving transistor through a contact hole, and the first anode and the second anode extending into the transmissive region may be integrally connected to each other through the first anode connection line and the second anode connection line to form a first repair portion.

[0255] In the first repair portion, the first anode connection line and the second anode connection line may be electrically connected to the first anode and the second anode respectively through anode contact holes.

[0256] The anode connection lines may be made of an oxide semiconductor.

[0257] The anode connection lines may be made conductive by doping the oxide semiconductor with impurities.

[0258] The first repair portion may partially overlap with the power line.

[0259] In the case where the first emission region or the second emission region may become dark, by irradiating a part of the first anode connection line or the second anode connection line with a laser from below the substrate, the first anode connection line or the second anode connection line may be made non-conductive.

[0260] The first anode and the second anode may be disposed on the first anode connection line and the second anode connection line to overlap with the first anode connection line and the second anode connection line respectively.

[0261] The transparent display device may further include sensing connection lines extending from the semiconductor layer of the sensing transistors.

[0262] The plurality of sub-pixels may include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, and the sensing connection lines may include a first sensing connection line connected to the first sub-pixel and the third sub-pixel and a second sensing connection line connected to the second sub-pixel and the fourth sub-pixel.

[0263] Each of the first sensing connection line and the second sensing connection line may be electrically connected to the sensing line through a sensing line contact hole.

[0264] The first sensing connection line and the second sensing connection line may be connected to each other.

[0265] The first sensing connection line and the second sensing connection line may be made of an oxide semiconductor.

[0266] The first sensing connection line and the second sensing connection line can be made conductive by doping an oxide semiconductor with impurities.

[0267] In the case where the first emission region or the second emission region may become dark, by irradiating a part of the first sensing connection line or the second sensing connection line with a laser from below the substrate, the first sensing connection line or the second sensing connection line can be made non-conductive.

[0268] The first anode and the second anode can be provided on the first sensing connection line and the second sensing connection line to overlap the first sensing connection line and the second sensing connection line, respectively.

[0269] The first sensing connection line can be provided in the first sub-pixel and the third sub-pixel, and the second sensing connection line can be provided in the second sub-pixel and the fourth sub-pixel.

[0270] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be construed as falling within the scope of the present disclosure.

Claims

1. A transparent display device, comprising: a substrate in which a plurality of sub-pixels including a transmissive region and an emissive region are defined; a driving transistor, the driving transistor being disposed in the emission region; an organic light emitting diode connected to the driving transistor; as well as An anode connection line extends from the semiconductor layer of the driving transistor to the transmission region and is connected to an anode of the organic light emitting diode.

2. The transparent display device according to claim 1, wherein: The data lines, the sensing lines, the power lines and the gate lines intersect each other to define the plurality of sub-pixels, and The sub-pixel further includes at least one of a switching transistor, a sensing transistor and a capacitor.

3. The transparent display device according to claim 2, wherein: The emission region includes a first emission region overlapping the driving transistor and a second emission region overlapping the switching transistor and the sensing transistor.

4. The transparent display device according to claim 3, wherein: The anode includes a first anode disposed in the first emission region and a second anode disposed in the second emission region, and The anode connecting wires include a first anode connecting wire and a second anode connecting wire respectively connected to the first anode and the second anode.

5. The transparent display device according to claim 4, wherein: The first anode and the second anode extend to the transmission region, and wherein each of the first anode connection line and the second anode connection line is connected to the drain electrode of the driving transistor through a contact hole, and The first anode and the second anode extending to the transmission region are integrally connected to each other through the first anode connection line and the second anode connection line to constitute a first repairing portion.

6. The transparent display device according to claim 5, wherein: In the first repairing portion, the first anode connecting line and the second anode connecting line are electrically connected to the first anode and the second anode, respectively, through the anode contact holes.

7. The transparent display device according to claim 1, wherein: The anode connection line is made of an oxide semiconductor.

8. The transparent display device according to claim 1, wherein: The anode connection line includes an oxide semiconductor doped with impurities, and the anode connection line is conductive.

9. The transparent display device according to claim 5, wherein: The first repair portion partially overlaps the power line.

10. The transparent display device according to claim 4, wherein: When the first emission area or the second emission area is darkened, the first anode connection line or the second anode connection line is rendered non-conductive by irradiating a portion of the first anode connection line or a portion of the second anode connection line with laser light from below the substrate.

11. The transparent display device according to claim 4, wherein: The first anode and the second anode are disposed on the first anode connection line and the second anode connection line to overlap the first anode connection line and the second anode connection line, respectively.

12. The transparent display device according to claim 4, further comprising: A sensing connection line extends from the semiconductor layer of the sensing transistor.

13. The transparent display device according to claim 12, wherein: The plurality of sub-pixels include a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, and The sensing connection lines include a first sensing connection line connected to the first sub-pixel and the third sub-pixel and a second sensing connection line connected to the second sub-pixel and the fourth sub-pixel.

14. The transparent display device according to claim 13, wherein: Each of the first sensing connection line and the second sensing connection line is electrically connected to the sensing line through a sensing line contact hole.

15. The transparent display device according to claim 13, wherein: The first sensing connection line and the second sensing connection line are connected to each other.

16. The transparent display device according to claim 13, wherein: The first sensing connection line and the second sensing connection line are made of an oxide semiconductor.

17. The transparent display device according to claim 13, wherein: The first sensing connection line and the second sensing connection line include an oxide semiconductor doped with impurities, and the first connection line and the second connection line are conductive.

18. The transparent display device according to claim 13, wherein: When the first emission area or the second emission area becomes dark, the first sensing connection line or the second sensing connection line is rendered non-conductive by irradiating a portion of the first sensing connection line or the second sensing connection line with laser light from below the substrate.

19. The transparent display device according to claim 13, wherein: The first anode and the second anode are disposed on the first sensing connection line and the second sensing connection line to overlap with the first sensing connection line and the second sensing connection line, respectively.

20. The transparent display device according to claim 13, wherein: The first sensing connection line is disposed in the first sub-pixel and the third sub-pixel, and Wherein, the second sensing connection line is arranged in the second sub-pixel and the fourth sub-pixel.

21. The transparent display device according to claim 3, wherein: The anode includes a first anode disposed in the first emission region and a second anode disposed in the second emission region, and The anode connection line branches toward the first anode and the second anode in the transmission region.

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