Mask and manufacturing method thereof, mask device and evaporation method

Abstract

The invention discloses a mask (1) and a manufacturing method thereof, a mask device and an evaporation method, and belongs to the technical field of display. The mask plate (1) comprises a plate body (100), the plate body (100) is provided with a first surface (101) and a second surface (102) which are opposite to each other, and the first surface (101) is used for being in contact with an object (4) to be evaporated. A plurality of evaporation holes (10) and a plurality of grooves (20) are formed in the plate body (100), the evaporation holes (10) penetrate through the first surface (101) and the second surface (102), and the grooves (20) are formed in the second surface (102) among the evaporation holes (10). The mask plate (1) can solve the problem that an evaporation material layer attached to an evaporation surface falls off in the manufacturing process, so that pollution to a target material, an evaporation chamber and the like is reduced, and the product yield is increased.

Description

Mask plate and manufacturing method thereof, mask device and evaporation method Technical Field

[0001] The embodiments of the present disclosure relate to the field of display technology, and in particular to a mask plate and a manufacturing method thereof, a mask device, and an evaporation method. Background Art

[0002] The evaporation process is one of the important processes for manufacturing display panels. In the evaporation process, a mask needs to be used to form multiple display film layers on the object to be evaporated (such as a substrate).

[0003] In the related art, the mask includes a plate body having a contact surface and an evaporation surface facing each other, and a plurality of evaporation holes penetrating the contact surface and the evaporation surface. The evaporation surface of the plate body is a plane.

[0004] However, the evaporation material adheres to form a film in the direction of the evaporation surface pointing to the contact surface. The plate with a flat evaporation surface has a weak adsorption capacity for the evaporation material. During the process of using the mask to make the display panel (such as moving, replacing the mask, etc.), the evaporation material attached to the evaporation surface may fall off, thereby contaminating the target material, evaporation chamber, etc., and affecting the product yield.

[0005] Summary of the Invention

[0006] The embodiments of the present disclosure provide a mask and a method for manufacturing the same, a mask device, and an evaporation method, which can alleviate the problem of the evaporation material layer attached to the evaporation surface falling off during the manufacturing process, thereby reducing contamination of the target material, the evaporation chamber, etc., and improving product yield. The technical solution is as follows:

[0007] On the one hand, a mask plate is provided, which includes a plate body, the plate body having a first surface and a second surface relative to each other, the first surface being used to contact the object to be evaporated; the plate body has a plurality of evaporation holes and a plurality of grooves, the evaporation holes pass through the first surface and the second surface, and the grooves are located on the second surface between the plurality of evaporation holes.

[0008] Optionally, in a direction from the second surface to the first surface, the cross-sectional area of ​​the groove gradually decreases, wherein the cross-sectional area of ​​the groove is perpendicular to the thickness direction of the plate body.

[0009] Optionally, the width of the opening of the groove is L1, the distance between the openings of two adjacent grooves is L2, and L1 and L2 satisfy the relationship: L1≤L2≤2*L1.

[0010] Optionally, the evaporation hole includes a first hole segment and a second hole segment connected to each other; the first hole segment has a first end close to the second surface and a second end located on the first surface, and the orthographic projection of the first end on the first surface is located inside the orthographic projection of the second end on the first surface; the second hole segment has a third end close to the first surface and a fourth end located on the second surface, and the orthographic projection of the third end on the first surface is inside the orthographic projection of the fourth end on the first surface.

[0011] Optionally, the inner wall of the first hole segment is a first concave surface that is recessed toward the second surface.

[0012] Optionally, the orthographic projection of the first point on the first end on the first surface is located on the connecting line of the second point on the second end and the center of the second end, and the line between the first point and the second point forms a first angle with the first surface; the orthographic projection of the third point on the third end on the second surface is located on the connecting line of the fourth point on the fourth end and the center of the fourth end, and the line between the third point and the fourth point forms a second angle with the second surface; the first angle is less than or equal to the second angle.

[0013] Optionally, the inner wall of the second hole segment is a second concave surface that is recessed toward the first surface; and the curvature radius of the first concave surface is smaller than the curvature radius of the second concave surface.

[0014] Optionally, the surface roughness of the inner wall of the second hole segment is lower than the surface roughness of the inner wall of the first hole segment.

[0015] Optionally, the evaporation hole includes a first hole segment having a first end close to the second surface and a second end located on the first surface, and the orthographic projection of the first end on the first surface is located inside the orthographic projection of the second end on the first surface.

[0016] Optionally, the size of the groove in the thickness direction of the plate body is smaller than the size of the first hole segment in the thickness direction of the plate body, and the size of the groove in the thickness direction of the plate body is smaller than the size of the second hole segment in the thickness direction of the plate body.

[0017] Optionally, a size of the groove in a thickness direction of the plate body is 1 μm to 30 μm.

[0018] Optionally, the distance between the orthographic projection of the first end on the first surface and the orthographic projection of the second end on the first surface is L3, and the distance between the orthographic projection of the third end on the second surface and the orthographic projection of the fourth end on the second surface is L4, L1<L4, L1<L3.

[0019] Optionally, the evaporation hole also includes a third hole segment, which is connected to the first hole segment and the second hole segment, and the third hole segment is located between the first hole segment and the second hole segment; the orthographic projection of the third hole segment on the first surface is located within the orthographic projection of the first hole segment on the first surface, and the orthographic projection of the third hole segment on the first surface is located within the orthographic projection of the second hole segment on the first surface.

[0020] Optionally, a dimension of the third hole segment in the thickness direction of the plate body is smaller than a dimension of the first hole segment in the thickness direction of the plate body.

[0021] Optionally, the side wall of the third hole segment is smooth.

[0022] Optionally, the bottom of the groove has a tip structure protruding away from the first surface; or the second surface has a tip structure protruding away from the first surface, and the tip structure is located between two adjacent grooves.

[0023] Optionally, the plate is made of Invar alloy or silicon.

[0024] Optionally, the object to be evaporated is a silicon-based driving backplane.

[0025] Optionally, the silicon-based driving backplane includes multiple display areas, each of the display areas includes multiple sub-pixel areas distributed in an array; the multiple evaporation holes correspond one-to-one to the multiple sub-pixel areas; or, the multiple evaporation holes correspond one-to-one to the multiple display areas.

[0026] On the other hand, a method for manufacturing a mask is provided, the method comprising: providing a plate body, the plate body having a first surface and a second surface relative to each other, the first surface being used to contact an object to be evaporated; making a plurality of evaporation holes and a plurality of grooves on the plate body, the evaporation holes passing through the first surface and the second surface, and the grooves being located on the second surface between the plurality of evaporation holes.

[0027] On the other hand, a mask device is provided, comprising a support member and any one of the aforementioned mask plates, wherein the support member is located on a side of the plate away from the first surface and is arranged along an edge of the plate.

[0028] Optionally, the mask includes a first mask and a second mask, and the orthographic projection of the evaporation holes of the first mask on the object to be evaporated is located within the orthographic projection of the evaporation holes of the second mask on the object to be evaporated; wherein, the first mask and the second mask are used to produce different film layers.

[0029] Optionally, the mask device further includes an electrostatic generator, and the electrostatic generator is used to provide a voltage of 500V to 1500V to the mask.

[0030] The beneficial effects brought about by the technical solution provided by the present disclosure include at least: by setting multiple grooves on the second surface (evaporation surface) of the mask, the contact area between the evaporation material and the evaporation surface is increased. Since the adhesion force of the evaporation material on the second surface is proportional to the contact area, the evaporation material can be better adhered to the second surface, reducing the possibility of contamination caused by the evaporation material falling off during the evaporation process, thereby improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0032] FIG1 is a schematic diagram of a cross-sectional structure of a mask provided by an embodiment of the present disclosure;

[0033] FIG2 is a schematic diagram of a planar structure of a mask provided by an embodiment of the present disclosure;

[0034] 3 to 7 are schematic cross-sectional views of another mask provided by an embodiment of the present disclosure;

[0035] FIG8 is a schematic diagram of a planar structure of another mask provided by an embodiment of the present disclosure;

[0036] FIG9 is a schematic diagram of a planar structure of another mask provided in an embodiment of the present disclosure;

[0037] FIG10 is a schematic plan view of a first hole segment and a second hole segment provided in an embodiment of the present disclosure;

[0038] FIG11 is a schematic diagram of a cross-sectional structure of a device for performing vapor deposition on an object to be vapor deposited, provided by an embodiment of the present disclosure;

[0039] FIG12 is a schematic diagram of a cross-sectional structure of another mask provided in an embodiment of the present disclosure;

[0040] FIG13 is a schematic diagram of a planar structure of a silicon-based driving backplane provided in an embodiment of the present disclosure;

[0041] FIG14 is a schematic diagram of a cross-sectional structure of a display panel provided in an embodiment of the present disclosure;

[0042] FIG15 is a schematic diagram of a planar structure of a mask provided by an embodiment of the present disclosure;

[0043] FIG16 is a schematic diagram of a planar structure of a light-emitting layer of another display panel provided by an embodiment of the present disclosure;

[0044] FIG17 is a schematic flow chart of a method for manufacturing a mask according to an embodiment of the present disclosure;

[0045] FIG18 is a schematic cross-sectional view of a mask device provided by an embodiment of the present disclosure;

[0046] FIG19 is a schematic diagram of a planar structure of a mask device provided by an embodiment of the present disclosure;

[0047] FIG20 is a schematic flow chart of an evaporation method provided in an embodiment of the present disclosure.

[0048] Legend: x, first direction y, second direction z, thickness direction of plate 1, mask 100, plate 101, first surface 102, second surface 10, evaporation hole 11, first hole segment 111, first end 112, second end 12, second hole segment 121, third end 122, fourth end 13, third portion 20, groove 2, support member 3, evaporation source 4, object to be evaporated 5, display area 50, sub-pixel area 61, first electrode layer 62, pixel definition layer 63, light-emitting layer 631, first light-emitting block 632, second light-emitting block 633, third light-emitting block 64, second electrode layer 65, encapsulation layer 66, color conversion layer 661, color conversion unit 662, retaining wall 67, color filter layer 671, color resist block 672, black matrix 68, protective layer DETAILED DESCRIPTION

[0049] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

[0050] The terms used in the embodiments of the present disclosure are only used to explain the embodiments of the present disclosure and are not intended to limit the present disclosure. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be the ordinary meanings understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second", "third" and similar words used in the patent application specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one" or "a" do not indicate a quantitative limitation, but rather indicate the presence of at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before "include" or "comprise" cover the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. The directional terms mentioned in the present disclosure, such as "top", "bottom", "up", "down", "left" or "right", etc., are only used to refer to the directions of the drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of the present disclosure, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present disclosure.

[0051] Figure 1 is a schematic cross-sectional view of a mask provided by an embodiment of the present disclosure. As shown in Figure 1 , mask 1 comprises a plate body, with plate body 100 having a first surface 101 and a second surface 102 facing each other. First surface 101 is used to contact the object to be deposited, and therefore, first surface 101 can also be referred to as the contact surface. The deposition material is deposited, adhered, and formed into a film from second surface 102 toward first surface 101, and therefore, second surface 102 can also be referred to as the deposition surface.

[0052] Figure 2 is a schematic planar structure diagram of a mask provided by an embodiment of the present disclosure, and Figure 1 is a schematic cross-sectional structure diagram along the CC section line in Figure 2, i.e., Figure 2 is a bottom view of Figure 1. Combining Figures 1 and 2, a plate body 100 has a plurality of evaporation holes 10 and a plurality of grooves 20. The evaporation holes 10 extend through the first surface 101 and the second surface 102, and the grooves 20 are located on the second surface.

[0053] Since the adhesion of the evaporated material is proportional to the friction coefficient and the contact area between the evaporated material and the mask, under the premise that the friction coefficient between the evaporated material and the mask remains unchanged, by making multiple grooves 20 on the second surface 102, the contact area between the evaporated material and the mask is larger on one side of the second surface 102, so that the adhesion of the evaporated material is greater, which is conducive to the adsorption of the evaporated material on the mask, thereby improving the contamination caused by the shedding of the evaporated material and improving the product yield.

[0054] During a normal evaporation process, the evaporation material is in the form of small, uniform particles. The evaporation material that passes through the evaporation holes adheres to the object to be deposited, forming a film with a uniform thickness. The evaporation material that does not pass through the evaporation holes adheres to the surface of the mask. Contamination caused by evaporation material shedding specifically refers to contamination of the evaporation source or object caused by evaporation material that falls off the mask surface during the evaporation process or when changing the object to be deposited.

[0055] For example, if the evaporation material attached to the mask surface falls off and forms a large flake structure, the flake structure may fall onto the evaporation source (such as the target material) and contaminate it. For another example, since evaporation is usually performed by heating the evaporation source, there will be an upward hot air flow. After the evaporation material falls off, it may be blown by the hot air flow onto the object to be evaporated. The large flake structure will form a bump on the film structure with uniform thickness, affecting the evaporation effect and detrimental to product yield.

[0056] When the object to be evaporated is a substrate of a display panel, the protrusions may cause abnormal display of bright spots or dark spots, affecting the display effect.

[0057] Exemplarily, as shown in FIG2 , a plurality of evaporation holes 10 are distributed in an array on the mask 1 .

[0058] Optionally, the shape of the orthographic projection of the evaporation hole 10 on the second surface 102 may be a rectangle as shown in FIG. 2 , or may be other polygons such as a pentagon, a circle, an ellipse, and the like.

[0059] Optionally, the mask 1 may also include a plurality of evaporation holes 10 of different shapes.

[0060] Optionally, a plurality of grooves 20 are distributed between any two adjacent evaporation holes 10 .

[0061] Optionally, the plurality of grooves 20 may be distributed only between two adjacent evaporation holes 10 in the first direction x, or only between two adjacent evaporation holes 10 in the second direction y. The first direction x and the second direction y intersect, and both the first direction x and the second direction y are perpendicular to the thickness direction z of the plate 100.

[0062] For example, as shown in FIG1 , in the direction from the second surface 102 to the first surface 101, the cross-sectional area of ​​the groove 20 remains unchanged, wherein the cross-sectional area of ​​the groove 20 is perpendicular to the thickness direction of the plate 100. FIG3 to FIG7 are schematic diagrams of the cross-sectional structure of another mask provided in an embodiment of the present disclosure. As shown in FIG3 to FIG6 , in the direction from the second surface 102 to the first surface 101, the cross-sectional area of ​​the groove 20 gradually decreases. As shown in FIG7 , in the direction from the second surface 102 to the first surface 101, the cross-sectional area of ​​the groove 20 first remains unchanged, then decreases, and then remains unchanged. That is, in the embodiments shown in FIG3 to FIG7 , the area of ​​the opening of the groove 20 is larger than the area of ​​the bottom of the groove. This design of the cross-sectional area of ​​the groove 20 facilitates the attachment of the vapor deposition material.

[0063] Optionally, the groove is shaped like a pit. Specifically, the groove can be cylindrical, with the corresponding cross-sectional diagram shown in FIG1 and the corresponding bottom view shown in FIG2; or prismatic, with the corresponding cross-sectional diagram shown in FIG1; or hemispherical, with the corresponding cross-sectional diagram shown in FIG3; or conical, with the corresponding cross-sectional diagram shown in FIG4; or truncated cone or prism, with the corresponding cross-sectional diagram shown in FIG5; or a shape formed by two hemispheres of different sizes stacked together, with the corresponding cross-sectional diagram shown in FIG6; or a shape formed by two cylinders of different sizes stacked together, with the corresponding cross-sectional diagram shown in FIG7.

[0064] FIG8 is a schematic diagram of the planar structure of another mask provided by an embodiment of the present disclosure. As shown in FIG8 , the shape of the groove 20 can also be strip-shaped, and the length directions of the plurality of grooves 20 are different, and the plurality of grooves 20 intersect to form a mesh structure. Optionally, as shown in FIG8 , among the plurality of strip-shaped grooves 20, the length direction of the grooves 20 of the first part is the first direction x, and the length direction of the grooves 20 of the second part is the second direction y. The grooves 20 of the first part and the grooves 20 of the second part intersect. By providing the strip-shaped grooves 20, the contact area between the evaporation material and the second surface 102 is increased, so that the evaporation material is better attached to the second surface 102, reducing the possibility of the evaporation material falling off during the evaporation process and causing contamination, thereby improving the product yield.

[0065] Figure 9 is a schematic diagram of the planar structure of another mask provided by an embodiment of the present disclosure. As shown in Figure 9, the shape of the groove 20 can also be strip-shaped, and the length direction of multiple grooves 20 is the same. Optionally, as shown in Figure 9, the length direction of the multiple strip-shaped grooves 20 is the second direction y.

[0066] Optionally, in the embodiments shown in Figures 8 and 9, for the strip-shaped groove 20, its cross-sectional shape can be: a rectangle as shown in Figure 1, or a semicircle as shown in Figure 3, or a triangle as shown in Figure 4, or a trapezoid as shown in Figure 5, or a shape formed by two semicircles of different sizes overlapping as shown in Figure 6, or a shape formed by two rectangles of different sizes overlapping as shown in Figure 7.

[0067] For example, referring to FIG1 again, the width of the opening of the groove 20 is L1, and the distance between the openings of two adjacent grooves 20 is L2. L1 and L2 satisfy the relationship: L1≤L2≤2*L1. If L1 is too large or L2 is too large, the number of grooves 20 that can be made in an area with the same area is reduced, and the sidewalls of the grooves 20 are reduced. Therefore, the contact area increased on the side of the second surface 102 is reduced, which is not conducive to improving the adsorption of the evaporated material on the side of the second surface B. In addition, if L2 is too small, it may also scratch the operator. Optionally, the grooves 20 can be made on the mask 1 by etching silicon. Since the process precision of etching silicon is high, it is easy to prepare grooves 20 in which L1 and L2 satisfy the above relationship.

[0068] Figure 10 is a schematic diagram of the planar structure of a first hole segment and a second hole segment provided in an embodiment of the present disclosure. Exemplarily, the evaporation hole 10 includes a first hole segment 11 and a second hole segment 12. As shown in Figure 1 and part (a) of Figure 10, the first hole segment 11 has a first end 111 close to the second surface 102 and a second end 112 located on the first surface 101, and the orthographic projection of the first end 111 on the first surface 101 is located inside the orthographic projection of the second end 112 on the first surface 101. As shown in Figure 1 and part (b) of Figure 10, the second hole segment 12 has a third end 121 close to the first surface 101 and a fourth end 122 located on the second surface 102, and the orthographic projection of the third end 121 on the first surface 101 is inside the orthographic projection of the fourth end 122 on the first surface 101. That is, the first hole segment 11 is close to the first surface 101, and the second hole segment 12 is close to the second surface 102. The area of ​​the orthographic projection of the side of the first hole section 11 away from the second surface 102 on the first surface 101 is larger than the area of ​​the orthographic projection of the side of the first hole section 11 close to the second surface 102 on the first surface 101. The area of ​​the orthographic projection of the side of the second hole section 12 away from the first surface 101 on the first surface 101 is larger than the area of ​​the orthographic projection of the side of the second hole section 12 close to the first surface 101 on the first surface 101.

[0069] For example, as shown in FIG1 , the evaporation hole 10 further includes a third hole segment 13, which is connected to the first hole segment 11 and the second hole segment 12, and is located between the first hole segment 11 and the second hole segment 12. The orthographic projection of the third hole segment 13 on the first surface 101 is located within the orthographic projection of the first hole segment 11 on the first surface 101, and the orthographic projection of the third hole segment 13 on the first surface 101 is located within the orthographic projection of the second hole segment 12 on the first surface 101. Because the radial dimension of the third hole segment 13 is smaller than the radial dimension of the first hole segment 11 and smaller than the radial dimension of the second hole segment 12, the radial dimension of the third hole segment 13 determines the evaporation dimension of the evaporation hole 10.

[0070] Optionally, as shown in FIG1 , the orthographic projection of one end of the third hole segment 13 close to the first surface 101 on the first surface 101 coincides with the orthographic projection of one end of the third hole segment 13 away from the first surface 101 on the first surface 101 .

[0071] Optionally, the orthographic projection of an end of the third hole segment 13 closer to the first surface 101 on the first surface 101 is located within the orthographic projection of an end of the third hole segment 13 farther from the first surface 101 on the first surface 101. In this case, the end of the third hole segment 13 closer to the first surface 101 determines the evaporation size of the evaporation hole 10. Alternatively, the orthographic projection of an end of the third hole segment 13 closer to the first surface 101 on the first surface 101 is located outside the orthographic projection of an end of the third hole segment 13 farther from the first surface 101 on the first surface 101. In this case, the end of the third hole segment 13 farther from the first surface 101 determines the evaporation size of the evaporation hole 10.

[0072] Optionally, the orthographic projection of the middle part of the third hole segment 13 on the first surface 101 is located within the orthographic projection of the end of the third hole segment 13 away from the first surface 101 on the first surface 101, and the orthographic projection of the middle part of the third hole segment 13 on the first surface 101 is located within the orthographic projection of the end of the third hole segment 13 away from the first surface 101 on the first surface 101. At this time, the radial dimension of the narrowest point in the middle part of the third hole segment 13 determines the evaporation size of the evaporation hole 10.

[0073] For example, the sidewalls of the third hole segment 13 are smooth. Smooth sidewalls here refer to the absence of protruding edges or sharp corners. In actual vapor deposition processes, a voltage is typically applied to the mask 1 to increase the adsorption of the vapor deposition material by electrostatic adsorption. Smooth sidewalls of the third hole segment 13 can reduce the risk of tip discharge in the third hole segment 13 during this step, leading to poor vapor deposition. Alternatively, the side surfaces of the third hole segment 13 can be curved or flat, as shown in FIG1 .

[0074] Optionally, the sidewall of the third hole segment 13 is smoothly connected to the sidewall of the first hole segment 11, and the sidewall of the third hole segment 13 is smoothly connected to the sidewall of the second hole segment 12. This design can reduce the occurrence of tip discharge at the connection between the third hole segment 13 and the first hole segment 11 and at the connection between the third hole segment 13 and the second hole segment 12 during the actual evaporation process, resulting in poor evaporation.

[0075] For example, as shown in Figure 1, the bottom of the groove 20 has a pointed structure that protrudes away from the first surface 101, and the second surface 102 has a pointed structure that protrudes away from the first surface 101. The pointed structure is located between two adjacent grooves 20. In the actual evaporation process, voltage is typically applied to the mask 1 to increase the adsorption force of the evaporation material by electrostatic adsorption. The pointed structure can increase the adsorption force of the second surface 102 to the evaporation material. Alternatively, the pointed structure can be a plurality of raised corners or a plurality of raised edges.

[0076] In other possible embodiments, the tip structure may be located only at the bottom of the groove 20 , or the tip structure may be located only on the second surface 102 between two adjacent grooves 20 .

[0077] FIG11 is a schematic diagram of a cross-sectional structure of an embodiment of the present disclosure when performing evaporation on an object to be evaporated. As shown in FIG11 , the object to be evaporated 4 is located on one side of the first surface 101 of the mask 1, and the evaporation source is located on one side of the second surface 102 of the mask 1. In combination with FIG1 and FIG10 , the evaporation size depends on the size of the third hole segment 13. However, in the actual evaporation process, when the mask 1 and the object to be evaporated 4 are accurately aligned, that is, the third hole segment 13 in the evaporation hole 10 is accurately aligned with the target position of evaporation on the object to be evaporated 4, since the mask 1 has a certain thickness, the extension line of the line connecting the evaporation source 3 to the end of the part of the third hole segment 13 away from the first surface 101 will fall into the target evaporation position on the object to be evaporated 4. Therefore, there is a D area as shown in FIG10 on the object to be evaporated 4, in which no evaporation material is attached to the object to be evaporated, or only a small amount of evaporation material is attached to the object to be evaporated. Since the D region is located within the vapor deposition area, the D region is also called the inner shadow region D.

[0078] In a reticle 1 that includes the first aperture segment 11 but does not include the second aperture segment 12, the evaporation accuracy is determined by the size of the first aperture segment 11 on the side away from the first surface 101, resulting in a greater distance between the portion determining the evaporation accuracy and the object to be deposited. Compared to this reticle, the reticle 1 in the embodiment shown in FIG1 includes both the first aperture segment 11 and the second aperture segment 12, while maintaining the overall thickness of the reticle 1. This results in a closer distance between the portion determining the evaporation accuracy and the object to be deposited, resulting in a smaller inner shadow region D, which facilitates improved evaporation accuracy on the object to be deposited.

[0079] For example, as shown in FIG1 , the inner wall of the first hole segment 11 is a first concave surface that is recessed toward the second surface 102 . This design allows the contact edge of the first surface 101 with the object to be evaporated to be as far away from the target location of evaporation as possible, thereby keeping impurity particles attached due to contact with the object to be evaporated away from the target location of evaporation, thereby improving product yield. Here, the object to be evaporated can be a substrate, the impurity particles can be the light-emitting layer material in the display panel, or the material that has fallen off the mask itself, etc., and the target location of evaporation can be the display area or sub-pixel area in the display panel.

[0080] For example, as shown in FIG1 , the inner wall of the second hole segment 12 is a second concave surface that is recessed toward the first surface 101. This design minimizes the possibility that the inner wall of the second hole segment 12 is located between the line connecting the evaporation source and the area to be deposited on the object during the evaporation process, that is, minimizes the inner wall of the second hole segment 12 from blocking the deposition material from adhering to the object.

[0081] For example, referring to Figures 1 and 11 , the radius of curvature R1 of the first concave surface is smaller than the radius of curvature R2 of the second concave surface. This design allows the distance between the side of the first hole segment 11 away from the first surface 101 and the second surface 102 to be closer, that is, the distance between the portion of the mask 1 that determines the deposition accuracy and the object 4 to be deposited is closer, thereby reducing the area of ​​the inner shadow region D, which is beneficial for improving the deposition accuracy on the object 4 to be deposited.

[0082] Optionally, as shown in FIG1 , a dimension H4 of the third hole segment 13 in the thickness direction z of the plate body 100 is smaller than a dimension H1 of the first hole segment 11 in the thickness direction of the plate body 100. This allows the distance between the portion of the third hole segment 13 that determines the evaporation accuracy and the object 4 to be evaporated to be as close as possible, thereby reducing the area of ​​the inner shadow region D, thereby improving the evaporation accuracy on the object 4 to be evaporated.

[0083] For example, as shown in FIG1 , the orthographic projection of a first point on the first end 111 on the first surface 101 is located on the line connecting the second point on the second end 112 and the center of the second end 112, and the line between the first point and the second point forms a first angle α1 with the first surface 101. The orthographic projection of a third point on the third end 121 on the second surface 102 is located on the line connecting the fourth point on the fourth end 122 and the center of the fourth end 122, and the line between the third point and the fourth point forms a second angle α2 with the second surface 102. The first angle α1 is less than or equal to the second angle α2. This design can define the relationship between the first angle α1 and the second angle α2 on the basis that the first hole segment 11 has a first concave surface, so that the first hole segment 11 has a larger radial space, thereby keeping the attached impurity particles as far away as possible from the target position of evaporation.

[0084] For example, as shown in Figure 1, the distance between the orthographic projection of the first end on the first surface 101 and the orthographic projection of the second end on the first surface 101 is L3, and the distance between the orthographic projection of the third end on the second surface 102 and the orthographic projection of the fourth end on the second surface 102 is L4, where L1 < L4 and L1 < L3. This design allows for as many grooves 20 as possible, thereby increasing the contact area between the vapor deposition material and the second surface 102, and improving the mask's ability to adsorb the vapor deposition material.

[0085] For example, the surface roughness of the inner wall of the second hole segment 12 is lower than the surface roughness of the inner wall of the first hole segment 11. The lower surface roughness of the inner wall of the second hole segment 12 makes the surface of the inner wall of the second hole segment 12 smoother, making it easier to demold the dried evaporation material located thereafter after the mask 1 is used, thereby facilitating the repeated use of the mask 1.

[0086] For example, as shown in FIG1 , the dimension H3 of the groove 20 in the thickness direction z of the plate body 100 is smaller than the dimension H1 of the first hole segment 11 in the thickness direction z of the plate body 100, and the dimension H3 of the groove 20 in the thickness direction z of the plate body 100 is smaller than the dimension H2 of the second hole segment 12 in the thickness direction z of the plate body 100. The groove 20 should not be too deep, otherwise it will be difficult to clean, which is not conducive to the repeated use of the mask 1. In addition, if the groove 20 is too deep, it can accommodate more evaporation material. During the evaporation process, as the evaporation material accumulates in the groove, the weight of the mask increases, and the mask may deform during the evaporation process. That is, a gap may appear between the first surface 101 of the mask and the object to be evaporated, and the evaporation material may enter this gap, affecting the evaporation quality and reducing the product yield.

[0087] For example, the dimension H3 of the grooves 20 in the thickness direction z of the plate 100 is 1 μm to 30 μm, for example, 15 μm. Grooves 20 within this dimension range can increase the contact area between the evaporation material on the second surface 102 and the mask 1, allowing the multiple grooves 20 to accommodate a larger amount of evaporation material, for example, accommodating a film layer of evaporation material during a single PM (Preventive Maintenance) cycle of the evaporation equipment. This allows the mask to be cleaned after evaporation on multiple objects 4, rather than requiring cleaning the evaporation material in multiple grooves 20 after evaporation on a few objects 4. Furthermore, the aforementioned problems of mask cleaning difficulties and mask deformation caused by excessively deep grooves 20 are avoided.

[0088] Figure 12 is a schematic cross-sectional view of another reticle provided in an embodiment of the present disclosure. Compared to the embodiment shown in Figure 1, the evaporation holes in the reticle 1 shown in Figure 12 include a first hole segment 11 but not a second hole segment 12. In the embodiment shown in Figure 12, the first hole segment 11 is located near the first surface 101, and the orthographic projection area of ​​the side of the first hole segment 11 away from the second surface 102 on the second surface 102 is larger than the orthographic projection area of ​​the side of the first hole segment 11 closer to the second surface 102 on the second surface 102.

[0089] Optionally, as shown in FIG12 , the mask 1 further includes a third hole segment 13, which is located on a side of the first hole segment 11 away from the first surface 101. Since the radial dimension of the third hole segment 13 is smaller than the radial dimension of the first hole segment 11, the radial dimension of the third hole segment 13 determines the evaporation dimension of the evaporation hole 10.

[0090] According to the foregoing, in the mask shown in FIG1 , the surface roughness of the second hole segment 12 is relatively low. Therefore, after the first hole segment 11, the second hole segment 12, and the third hole segment 13 are formed, it is usually necessary to use a chemical reagent to perform surface etching on the inner wall of the second hole segment 12 to make the inner wall of the second hole segment 12 smooth. However, during this step, the chemical reagent will also corrode the already-formed first hole segment 11, thereby affecting the lateral dimensions of the intersection of the first hole segment 11 and the second hole segment 12 (i.e., the third hole segment 13). As a result, there is a certain difference between the theoretical design size of the evaporation hole and the actual size after processing, affecting the accuracy of the evaporation hole. In the embodiment shown in FIG12 , since the second hole segment 12 is not included, there is no need to use a chemical reagent to perform surface etching after the first hole segment 11 and the third hole segment 13 are formed. Therefore, the difference between the theoretical design size of the evaporation hole and the actual size after processing in the embodiment shown in FIG11 is relatively small.

[0091] In the embodiment shown in FIG12 , the size limitations of the first hole section 11 and the groove 20 are described above and will not be repeated here.

[0092] For example, the plate 100 is made of Invar or silicon. The strength and hardness of these two materials allow the center and sides of the mask to fit closely to the object to be deposited without causing significant deformation or other problems that could affect the deposition quality.

[0093] Exemplarily, the object to be evaporated is a driver backplane. Optionally, the driver backplane includes a stacked active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source-drain electrode layer, and a planar layer, wherein multiple active regions in the active layer, multiple gates in the gate layer, and multiple source electrodes and drain electrodes in the source-drain electrode layer constitute multiple thin film transistors.

[0094] Exemplarily, the object to be evaporated is a silicon-based driver backplane. Silicon-based driver backplanes are usually used to make display panels, such as silicon-based OLED (Organic Light Emitting Diode) display panels. Silicon-based OLED display panels have a higher PPI (Pixels Per Inch, pixel density), so compared with other display panels, the sub-pixel area of ​​silicon-based OLED display panels is smaller. During the evaporation process, the ratio of the area of ​​an impurity particle attached to the silicon-based driver backplane to its sub-pixel area is larger, for example, 1 / 3, while in products with lower PPI, the ratio is lower, for example, 1 / 100. That is, the impurity particles have a greater impact on the display effect of the silicon-based OLED display panel. Therefore, the embodiments of the present disclosure are particularly suitable for the case where the object to be evaporated is a silicon-based driver backplane.

[0095] For example, the silicon-based driving backplane includes multiple display areas, that is, multiple display panels can be manufactured on one silicon-based driving backplane.

[0096] Optionally, the outer edge of the mask 1 is circular. The silicon-based driver backplane is made on a silicon wafer, and its outer edge is mostly circular, so the circular mask 1 can adapt to the outer edge shape of the silicon-based driver backplane.

[0097] Optionally, the outer edge shape of the mask 1 may also be a polygon, such as a rectangle, to adapt to objects to be evaporated with different outer edge shapes.

[0098] Figure 13 is a schematic diagram of a planar structure of a silicon-based driving backplane provided by an embodiment of the present disclosure. As shown in Figure 13, the display area 5 includes a plurality of sub-pixel areas 50 distributed in an array.

[0099] Figure 14 is a schematic diagram of the cross-sectional structure of a display panel provided by an embodiment of the present disclosure. As shown in Figure 14, a silicon-based driver backplane is selected as the object to be evaporated 4, and multiple film layer structures are fabricated on the silicon-based driver backplane to form a display panel. The display panel includes a first electrode layer 61, a pixel definition layer 62, a light-emitting layer 63, a second electrode layer 64, an encapsulation layer 65, a color conversion layer 66, a color filter layer 67, and a protective layer 68, which are sequentially stacked on the silicon-based driver backplane. The light-emitting layer 63 and the second electrode layer 64 can be fabricated using the mask 1 of the embodiment of the present disclosure.

[0100] Illustratively, the first electrode layer 61 includes a plurality of first electrodes distributed in an array, and the plurality of first electrodes correspond one-to-one to the plurality of sub-pixel regions 50. Optionally, the first electrode layer 61 is an anode layer. Optionally, the first electrode layer 61 is made of a metal or metal oxide material, such as silver or aluminum, or a transparent conductive material, such as ITO (Indium Tin Oxide).

[0101] Optionally, the pixel definition layer 62 is used to separate two adjacent first electrodes to prevent crosstalk between the electrical signals between the two adjacent first electrodes from affecting the display effect. Optionally, as shown in Figure 11, the orthographic projection of the pixel definition layer 62 on the silicon-based driver backplane at least partially overlaps with the orthographic projection of the first electrode layer 61 on the driver backplane. Optionally, the material of the pixel definition layer 62 is silicon oxide or silicon dioxide.

[0102] Optionally, the light-emitting layer 63 is a whole-layer structure. Due to the design of the multiple first electrodes and the pixel definition layer 62, the light-emitting layer 63 has staggered layers at the edge of the sub-pixel region 50 and has low lateral conductivity. Therefore, although the light-emitting layer 63 is a whole-layer structure, its lateral crosstalk is small.

[0103] Optionally, the light emitted by the light emitting layer 63 is white.

[0104] Optionally, the light-emitting layer 63 includes a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a light-emitting material layer, a hole blocking layer (HBL), an electron transport layer (ETL) and an electron injection layer (EIL) stacked in the direction of the pixel definition layer 62 away from the first electrode layer 61.

[0105] Optionally, the second electrode layer 64 is a whole layer structure. Optionally, the second electrode layer 64 is a cathode layer. Optionally, the second electrode layer is made of a transparent conductive material, such as ITO.

[0106] Optionally, the encapsulation layer 65 includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer stacked sequentially in a direction from the light-emitting layer 63 away from the first electrode layer 61. The second encapsulation layer is an organic encapsulation layer used to fill the uneven surface below, and the first and third encapsulation layers are inorganic encapsulation layers used to protect the second encapsulation layer and prevent external water and oxygen from entering the interior of the display panel through the second organic encapsulation layer made of organic material.

[0107] Optionally, the color conversion layer 66 includes a plurality of color conversion units 661 arranged in an array and a retaining wall structure 662 located between the plurality of color conversion units 661. The plurality of color conversion units 661 correspond one-to-one to the plurality of sub-pixel regions 50. The plurality of color conversion units 661 are divided into a first portion, a second portion, and a third portion. The color conversion units 661 in these three portions can convert the white light emitted by the light-emitting layer 63 into light of different colors. For example, the plurality of color conversion units 661 in the first portion can convert white light into red light, the plurality of color conversion units 661 in the second portion can convert white light into green light, and the plurality of color conversion units 661 in the third portion can convert white light into blue light.

[0108] Optionally, the color filter layer 67 includes a plurality of color resist blocks 671 arranged in an array and a black matrix 672 located between the plurality of color resist blocks. The plurality of color resist blocks 671 correspond one-to-one to the plurality of sub-pixel regions 50. The colors of the plurality of color resist blocks 671 correspond to the colors of the plurality of color conversion units 661.

[0109] In one possible embodiment, in combination with Figures 1, 2, 13 and 14, the orthographic projection of an evaporation hole 10 on the second surface 102 and the orthographic projection of a display area 5 on the second surface 102 at least partially overlap and correspond one to one. The sub-pixel area 50 of the high-PPI silicon-based OLED display panel is relatively small in size, and the entire light-emitting layer 63 and the cathode layer 64 are usually evaporated by full-surface evaporation. Optionally, the size of the narrowest part of an evaporation hole 10 (for example, the third hole segment 13 shown in Figure 1) is 3mm to 32mm, and the distance between the edges of the narrowest parts of two adjacent evaporation holes 10 (for example, the third hole segment 13 shown in Figure 1) is 1mm to 30mm.

[0110] FIG15 is a schematic diagram of a planar structure of a mask provided in an embodiment of the present disclosure. In another possible embodiment, in combination with FIG13 and FIG15 , the orthographic projection of an evaporation hole 10 on the second surface 102 and the orthographic projection of a sub-pixel area 50 on the second surface 102 at least partially overlap and correspond one to one. Optionally, the radial dimension of the narrowest part of an evaporation hole 10 is 3 μm to 50 μm, and the distance between the edges of the narrowest parts of two adjacent evaporation holes 10 (for example, the third hole segment 13 shown in FIG1 ) is 0.1 μm to 10 μm. Optionally, when the object to be evaporated 4 is a silicon-based driving backplane, and an evaporation hole 10 on the mask 1 corresponds to a sub-pixel area 50, the mask 1 can be made by etching silicon. The dimensional accuracy of the mask 1 made by this method and this material is high, and smaller evaporation holes 10 can be prepared.

[0111] It should be noted that when the orthographic projection of the narrowest point of a evaporation hole 10 (for example, the third hole segment 13 shown in FIG1 ) onto the first surface 101 is a circle, the size of the narrowest point of the evaporation hole 10 refers to the diameter of the circular projection. When the orthographic projection of the narrowest point of a evaporation hole 10 (for example, the third hole segment 13 shown in FIG1 ) onto the first surface 101 is a rectangle, the size of the narrowest point of the evaporation hole 10 refers to the length of the short side of the rectangular projection.

[0112] Figure 16 is a schematic planar structural diagram of the light-emitting layer of another display panel provided by an embodiment of the present disclosure. As shown in Figure 16, the light-emitting layer 63 includes a plurality of light-emitting blocks arranged in an array. In conjunction with Figures 13 and 16, the plurality of light-emitting blocks correspond one-to-one with the plurality of sub-pixel regions 50. Optionally, the plurality of light-emitting blocks includes a first light-emitting block 631, a second light-emitting block 632, and a third light-emitting block 633, which can emit red, green, and blue, respectively.

[0113] Alternatively, when manufacturing the light-emitting layer shown in FIG15 , three different masks may be used, and these three masks may be used in sequence to manufacture a plurality of first light-emitting blocks 631, a plurality of second light-emitting blocks 632, and a plurality of third light-emitting blocks 633, thereby obtaining the light-emitting layer. Alternatively, when manufacturing the light-emitting layer shown in FIG15 , the same mask may be used to manufacture a plurality of first light-emitting blocks 631, and then the mask may be shifted to manufacture a plurality of second light-emitting blocks 632, and then the mask may be shifted to manufacture a plurality of third light-emitting blocks 633, thereby obtaining the light-emitting layer.

[0114] Optionally, the driving backplane of the display panel including the light-emitting layer shown in FIG16 may be a silicon-based driving backplane, or a driving backplane corresponding to other low-PPI products.

[0115] Exemplarily, the mask 1 includes a first mask and a second mask, and the orthographic projection of the evaporation hole of the first mask on the driving backplane is located within the orthographic projection of the evaporation hole of the second mask on the driving backplane. The first mask and the second mask are used to make different film layers. Here, the first mask can be used to make the light-emitting layer 63 of the embodiment shown in Figure 11 or Figure 12, and the second mask can be used to make the second electrode layer 64 of the embodiment shown in Figure 11 or the second electrode layer 64 of the display panel including the light-emitting layer shown in Figure 12. The light-emitting layer 63 and cathode layer 64 made using these two mask plates can make the second electrode layer 64 cover the light-emitting layer 63 and cover the edge of the display area 5, which is conducive to the connection of the second electrode layer 64 with the wiring (such as VSS wiring) located at the edge of the display area 5.

[0116] FIG17 is a flow chart of a method for manufacturing a mask provided by an embodiment of the present disclosure. As shown in FIG17 , the method includes:

[0117] In step S1, a plate body 100 is provided. The plate body 100 has a first surface and a second surface opposite to each other, wherein the first surface is used to contact an object to be evaporated;

[0118] In step S2, a plurality of evaporation holes and a plurality of grooves are made on the plate body 100. The evaporation holes penetrate the first surface and the second surface, and the grooves are located on the second surface between the plurality of evaporation holes.

[0119] Illustratively, step S2 includes: forming a first groove corresponding to the first hole segment 11 on the first surface 101 side of the plate body 100 of the mask 1. The first groove has a bottom surface close to the second surface 102. To facilitate confirmation of the size of the evaporation hole, a groove ring corresponding to the third hole segment 13 is usually formed on this bottom surface. The radial dimension of the outer edge of the groove ring is the same as the radial dimension of the third hole segment 13. Subsequently, a second groove corresponding to the second hole segment 12 is formed on the second surface 102 side until the second groove is connected to the groove ring corresponding to the third hole segment 13, thereby forming the first and second grooves to form the first and second hole segments 11, 12, and the third hole segment 13.

[0120] FIG18 is a schematic diagram of the cross-sectional structure of a mask device provided in an embodiment of the present disclosure. FIG19 is a schematic diagram of the planar structure of a mask device provided in an embodiment of the present disclosure, and FIG18 is a schematic diagram of the cross-sectional structure along the EE section line in FIG19. As shown in FIG17 and FIG18, the mask device includes a support member 2 and any of the aforementioned mask plates 1, and the support member 2 is located on the side of the mask plate 1 away from the first surface 101. The support member 2 serves to support the mask plate and the object to be evaporated. The mask device has the same effect as the aforementioned mask plate, and will not be described in detail here. It should be noted that in the embodiment shown in FIG18, in order to display the object to be evaporated 4, the middle part of the mask plate 1 is empty, that is, the mask plate 1 is ring-shaped. The actual plane structure of the mask plate 1 in FIG18 refers to the aforementioned content.

[0121] Exemplarily, the mask apparatus further includes an electrostatic generator for providing a voltage of 500V to 1500V to the mask 1. This electrostatic attraction can increase the mask's adsorption force on the deposition material. Furthermore, since electrostatic discharge (e.g., electrostatic breakdown) typically occurs only when the static electricity on the object to be deposited (e.g., a silicon-based driver backplane) reaches 10kV or higher, static electricity of this magnitude on the electrostatic generator does not pose a threat to the object to be deposited.

[0122] Optionally, since the support member is mostly made of a conductive material (such as a metal material), the electrostatic generator can provide voltage to the mask 1 through the support member.

[0123] Exemplarily, the strength of the material of the support member 2 is greater than the strength of the material of the mask 1 so as to provide a better supporting effect.

[0124] Optionally, the support member is made of stainless steel.

[0125] Optionally, the shape of the inner edge opening of the support member 2 is the same as the outer edge shape of the mask 1 , so as to adapt to masks 1 with different outer edge shapes.

[0126] FIG20 is a schematic flow chart of an evaporation method provided by an embodiment of the present disclosure. As shown in FIG20 , the method includes:

[0127] In step S1, an object to be evaporated is provided;

[0128] In step S2 , any of the aforementioned mask plates is used to perform vapor deposition on the object to be vapor deposited.

[0129] Exemplarily, the evaporation method further includes applying a voltage of 500 V to 1500 V to the mask during the evaporation process. Applying static electricity during the evaporation process can increase the adsorption of the evaporation material by the mask through electrostatic adsorption.

[0130] The above are merely optional embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A mask, characterized in that: The mask plate (1) comprises a plate body (100), wherein the plate body (100) has a first surface (101) and a second surface (102) opposite to each other, wherein the first surface (101) is used for contacting with an object to be evaporated (4); The plate body (100) has a plurality of evaporation holes (10) and a plurality of grooves (20), the evaporation holes (10) passing through the first surface (101) and the second surface (102), and the grooves (20) are located on the second surface (102) between the plurality of evaporation holes (10).

2. The mask according to claim 1, characterized in that: In the direction from the second surface (102) to the first surface (101), the cross-sectional area of ​​the groove (20) gradually decreases, wherein the cross-sectional area of ​​the groove (20) is perpendicular to the thickness direction of the plate body (100).

3. The mask according to claim 2, characterized in that: The width of the opening of the groove (20) is L1, the distance between the openings of two adjacent grooves (20) is L2, and L1 and L2 satisfy the relationship: L1≤L2≤2*L1.

4. The mask according to any one of claims 1 to 3, characterized in that: The evaporation hole (10) comprises a first hole segment (11) and a second hole segment (12); The first hole section (11) has a first end (111) close to the second surface (102) and a second end (112) located on the first surface (101), and an orthographic projection of the first end (111) on the first surface (101) is located inside an orthographic projection of the second end (112) on the first surface (101); The second hole section (12) has a third end (121) close to the first surface (101) and a fourth end (122) located on the second surface (102), and the orthographic projection of the third end (121) on the first surface (101) is located inside the orthographic projection of the fourth end (122) on the first surface (101).

5. The mask according to claim 4, characterized in that: The inner wall of the first hole section (11) is a first concave surface that is recessed in the direction of the second surface (102).

6. The mask according to claim 5, characterized in that: The orthographic projection of a first point on the first end (111) on the first surface (101) is located on a connecting line between a second point on the second end (112) and the center of the second end (112), and a connecting line between the first point and the second point forms a first angle with the first surface (101); The orthographic projection of the third point on the third end (121) on the second surface (102) is located on a connecting line between a fourth point on the fourth end (122) and the center of the fourth end (122), and a connecting line between the third point and the fourth point forms a second angle with the second surface (102); The first angle is less than or equal to the second angle.

7. The mask according to claim 5, characterized in that: The inner wall of the second hole section (12) is a second concave surface that is recessed in the direction of the first surface (101); The curvature radius of the first concave surface is smaller than the curvature radius of the second concave surface.

8. The mask according to claim 6, characterized in that: The surface roughness of the inner wall of the second hole section (12) is lower than the surface roughness of the inner wall of the first hole section (11).

9. The mask according to claim 3, characterized in that: The evaporation hole (10) comprises a first hole segment (11), the first hole segment (11) having a first end (111) close to the second surface (102) and a second end (112) located on the first surface (101), the orthographic projection of the first end (111) on the first surface (101) being located inside the orthographic projection of the second end (112) on the first surface (101).

10. The mask according to claim 6, characterized in that: The dimension of the groove (20) in the thickness direction of the plate body (100) is smaller than the dimension of the first hole segment (11) in the thickness direction of the plate body (100), and the dimension of the groove (20) in the thickness direction of the plate body (100) is smaller than the dimension of the second hole segment (12) in the thickness direction of the plate body (100).

11. The mask according to any one of claims 5 to 10, characterized in that: The size of the groove (20) in the thickness direction of the plate body (100) is 1 μm to 30 μm.

12. The mask according to any one of claims 5 to 8 and claim 10, characterized in that: The distance between the orthographic projection of the first end (111) on the first surface (101) and the orthographic projection of the second end (112) on the first surface (101) is L3, the distance between the orthographic projection of the third end (121) on the second surface (102) and the orthographic projection of the fourth end (122) on the second surface (102) is L4, L1<L4, L1<L3.

13. The mask according to any one of claims 5 to 8 and claim 10, characterized in that: The evaporation hole (10) further comprises a third hole segment (13), wherein the third hole segment (13) is connected to the first hole segment (11) and the second hole segment (12), and the third hole segment (13) is located between the first hole segment (11) and the second hole segment (12); The orthographic projection of the third hole segment (13) on the first surface (101) is located within the orthographic projection of the first hole segment (11) on the first surface (101), and the orthographic projection of the third hole segment (13) on the first surface (101) is located within the orthographic projection of the second hole segment (12) on the first surface (101).

14. The mask according to claim 13, characterized in that: The dimension of the third hole segment (13) in the thickness direction of the plate body (100) is smaller than the dimension of the first hole segment (11) in the thickness direction of the plate body (100).

15. The mask according to claim 14, characterized in that: The side wall of the third hole section (13) is smooth.

16. The mask according to any one of claims 5 to 10 and claims 14 to 15, characterized in that: The bottom of the groove (20) has a tip structure protruding away from the first surface (101); or, The second surface (102) has a tip structure protruding away from the first surface (101), and the tip structure is located between two adjacent grooves (20).

17. The mask according to any one of claims 5 to 10 and claims 14 to 15, characterized in that: The material of the plate body (100) is Invar alloy or silicon.

18. The mask according to any one of claims 5 to 10 and claims 14 to 15, characterized in that: The object to be evaporated (4) is a silicon-based driving backplane.

19. The mask according to claim 18, characterized in that: The silicon-based driving backplane comprises a plurality of display areas (5), each of the display areas (5) comprising a plurality of sub-pixel areas (50) distributed in an array; The plurality of evaporation holes (10) correspond one-to-one to the plurality of sub-pixel regions (50); or, The plurality of vapor deposition holes (10) correspond one-to-one to the plurality of display areas (5).

20. A method for making a mask, characterized in that: The method comprises: Providing a plate body, the plate body having a first surface and a second surface opposite to each other, the first surface being used for contacting with an object to be evaporated; A plurality of evaporation holes and a plurality of grooves are made on the plate body, wherein the evaporation holes penetrate the first surface and the second surface, and the grooves are located on the second surface between the plurality of evaporation holes.

21. A mask device, characterized in that: The mask device comprises a support member (2) and a mask plate (1) according to any one of claims 1 to 19, wherein the support member (2) is located on a side of the plate body (100) away from the first surface (101) and is arranged along an edge of the plate body (100).

22. The mask device according to claim 21, characterized in that: The mask (1) comprises a first mask and a second mask, wherein the orthographic projection of the evaporation holes (10) of the first mask on the object to be evaporated (4) is located within the orthographic projection of the evaporation holes (10) of the second mask on the object to be evaporated (4); The first mask and the second mask are used to manufacture different film layers.

23. The mask device according to claim 21 or 22, characterized in that: The mask device also includes an electrostatic generator, which is used to provide a voltage of 500V to 1500V to the mask plate (1).

Images