Semiconductor device and method for manufacturing semiconductor device

Abstract

This semiconductor device is provided with: a transistor unit; a current sensing unit for detecting a current flowing through the transistor unit; a gate pad disposed above the semiconductor substrate; and a resistance adjustment section that is electrically connected to the gate pad and that adjusts the gate resistance of the transistor section and the current sensing section, the resistance adjustment section having: a main adjustment section that is electrically connected to the gate conductive section of the transistor section; and a sensing adjustment section electrically connected to the gate conductive section of the current sensing section, the main adjustment section and the sensing adjustment section each including a diode element section having a plurality of diodes arranged in anti-parallel, and a resistance section connected to the diode element section.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device. Background Art

[0002] A semiconductor device "including a main IGBT unit and a sense IGBT unit connected in parallel with each other" is disclosed in Patent Document 1.

[0003] Prior Art Documents Patent Documents Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-149558 Patent Document 2: Japanese Patent No. 5591213 Patent Document 3: Japanese Patent No. 6102394 Summary of the Invention

[0004] Technical Problem Suppress gate oscillation in the semiconductor device.

[0005] General Disclosure In a first aspect of the present invention, there is provided a semiconductor device including: a transistor section; a current sensing section for detecting a current flowing through the transistor section; a gate pad provided above a semiconductor substrate; and a resistance adjustment section electrically connected to the gate pad for adjusting a gate resistance of the transistor section and the current sensing section. The resistance adjustment section may include: a main adjustment section electrically connected to a gate conductive section of the transistor section; and a sense adjustment section electrically connected to a gate conductive section of the current sensing section. Each of the main adjustment section and the sense adjustment section may include a diode element section having a plurality of diodes arranged in reverse parallel, and a resistance section connected to the diode element section.

[0006] In the semiconductor device described above, the resistance section may have a resistance value such that the transistor section turns on earlier than the current sensing section and turns off later than the current sensing section.

[0007] In any of the semiconductor devices described above, the main adjustment section may have a main conduction-side diode having an anode electrically connected to the gate pad and a cathode electrically connected to the gate conductive section of the transistor section. The main adjustment section may have a main turn-off-side diode having an anode electrically connected to the gate conductive section of the transistor section and a cathode electrically connected to the gate pad. The main adjustment section may have a main turn-off-side resistance electrically connected between the anode of the main turn-off-side diode and the gate conductive section of the transistor section.

[0008] In any of the above semiconductor devices, the sensing adjustment unit may have a sensing conduction-side diode with an anode electrically connected to the gate pad and a cathode electrically connected to the gate conductive portion of the current sensing unit. The sensing adjustment unit may have a sensing cutoff-side diode with an anode electrically connected to the gate conductive portion of the current sensing unit and a cathode electrically connected to the gate pad. The sensing adjustment unit may have a sensing conduction-side resistor electrically connected between the cathode of the sensing conduction-side diode and the gate conductive portion of the current sensing unit.

[0009] In any of the above semiconductor devices, in the resistance adjustment unit, the diode element unit may be provided above the resistance unit.

[0010] In any of the above semiconductor devices, the main adjustment unit may have a main conduction-side diode with an anode electrically connected to the gate pad and a cathode electrically connected to the gate conductive portion of the transistor unit. The main adjustment unit may have a main cutoff-side diode with an anode electrically connected to the gate conductive portion of the transistor unit and a cathode electrically connected to the gate pad. The main adjustment unit may have a main conduction-side resistor electrically connected between the cathode of the main conduction-side diode and the gate conductive portion of the transistor unit. The main adjustment unit may have a main cutoff-side resistor electrically connected between the anode of the main cutoff-side diode and the gate conductive portion of the transistor unit.

[0011] In any of the above semiconductor devices, the sensing adjustment unit may have a sensing conduction-side diode with an anode electrically connected to the gate pad and a cathode electrically connected to the gate conductive portion of the current sensing unit. The sensing adjustment unit may have a sensing cutoff-side diode with an anode electrically connected to the gate conductive portion of the current sensing unit and a cathode electrically connected to the gate pad. The sensing adjustment unit may have a sensing conduction-side resistor electrically connected between the cathode of the sensing conduction-side diode and the gate conductive portion of the current sensing unit. The sensing adjustment unit may have a sensing cutoff-side resistor electrically connected between the anode of the sensing cutoff-side diode and the gate conductive portion of the current sensing unit.

[0012] Any of the above semiconductor devices may include a first insulating portion provided above the semiconductor substrate. Any of the above semiconductor devices may include a second insulating portion provided above the first insulating portion. Any of the above semiconductor devices may include an interlayer insulating film provided above the first insulating portion and the second insulating portion. Any of the above semiconductor devices may include a front-side metal layer provided on the interlayer insulating film. The resistance unit may be provided on the first insulating portion. The diode element unit may be provided above the resistance unit with the second insulating portion therebetween.

[0013] Any of the above semiconductor devices may include a first contact portion that is configured to extend from the upper end of the interlayer insulating film through the diode element portion, the second insulating portion, and the resistor portion to the upper end of the first insulating portion, and the first contact portion is used to connect the front-side metal layer and the diode element portion.

[0014] Any of the above semiconductor devices may include a third insulating portion that is disposed around the first contact portion and is used to electrically isolate the first contact portion from the resistor portion.

[0015] Any of the above semiconductor devices may include a second contact portion that is configured to extend from the upper end of the interlayer insulating film through the diode element portion, the second insulating portion, and the resistor portion to the upper end of the first insulating portion, and the second contact portion is used to connect the front-side metal layer and the resistor portion.

[0016] In any of the above semiconductor devices, the resistance adjustment portion may have a resistance adjustment trench portion that is disposed in the semiconductor substrate and extends along a preset direction. In any of the above semiconductor devices, the resistor portion may be disposed in the resistance adjustment trench portion.

[0017] In any of the above semiconductor devices, the diode element portion and the resistor portion may be in direct contact via a contact hole provided in the second insulating portion.

[0018] In any of the above semiconductor devices, the resistance adjustment portion may include: a resistance adjustment trench portion that is disposed in the semiconductor substrate and extends along a preset direction; a first polysilicon layer that is disposed inside the resistance adjustment trench portion; and a second polysilicon layer that is disposed in direct contact with the first polysilicon layer.

[0019] In any of the above semiconductor devices, the resistance adjustment portion may have a resistance adjustment trench portion that is disposed in the semiconductor substrate and extends along a preset direction. In any of the above semiconductor devices, the diode element portion may include a cathode region and an anode region. In any of the above semiconductor devices, at least one of the cathode region and the anode region may be disposed in the resistance adjustment trench portion.

[0020] In any of the above semiconductor devices, the thickness of the resistor portion may be thinner than the thickness of the diode element portion.

[0021] In a second aspect of the present invention, there is provided a method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device including a transistor portion and a current sensing portion, and includes: a step of providing a gate pad above a semiconductor substrate; and a step of providing a resistance adjustment portion that is electrically connected to the gate pad and is used to adjust the gate resistance of the transistor portion and the current sensing portion. The step of providing the resistance adjustment portion may include: a step of forming a main adjustment portion that is electrically connected to the gate conductive portion of the transistor portion; and a step of forming a sensing adjustment portion that is electrically connected to the gate conductive portion of the current sensing portion. Each of the main adjustment portion and the sensing adjustment portion may include a diode element portion having a plurality of diodes arranged in antiparallel, and a resistance portion connected to the diode element portion.

[0022] In the above method for manufacturing a semiconductor device, it may include: a step of forming a first insulating portion above the semiconductor substrate; a step of forming a first polysilicon layer for forming the resistance portion on the first insulating portion; a step of forming a second insulating portion on the first polysilicon layer; a step of forming a second polysilicon layer for forming the diode element portion on the second insulating portion; a step of forming an interlayer insulating film above the diode element portion and the resistance portion; a step of forming a first opening for forming a first contact portion by penetrating the interlayer insulating film, the second polysilicon layer, and the second insulating portion; a step of forming a second opening for forming a second contact portion by penetrating the interlayer insulating film, the second polysilicon layer, the second insulating portion, and the first polysilicon layer; a step of forming the first contact portion in the first opening; and a step of forming the second contact portion in the second opening.

[0023] In any of the above methods for manufacturing a semiconductor device, the first opening and the second opening may be formed by the same etching process. The first contact portion and the second contact portion may be formed by the same contact formation process.

[0024] In the above method for manufacturing a semiconductor device, it may include: a step of forming a first insulating portion above the semiconductor substrate; a step of forming a first polysilicon layer for forming the resistance portion on the first insulating portion; a step of forming a second insulating portion on the first polysilicon layer; a step of forming a second polysilicon layer for forming the diode element portion on the second insulating portion; a step of forming an interlayer insulating film above the diode element portion and the resistance portion; a step of forming a first opening for forming a first contact portion by penetrating the interlayer insulating film, the second polysilicon layer, and the second insulating portion; and a step of forming the first contact portion in the first opening.

[0025] In the manufacturing method of any of the above semiconductor devices, the following steps may be included: a step of forming a third opening in the first polysilicon layer before the step of forming the second insulating portion; and a step of forming a third insulating portion in the third opening. The step of forming the first opening may include a step of forming the first opening by penetrating the third insulating portion. The step of forming the first contact portion may include a step of forming the first contact portion inside the third insulating portion.

[0026] It should be noted that the above description of the invention does not list all the features of the present invention. In addition, sub-combinations of these feature groups can also form inventions. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1A An example of a top view showing the semiconductor device 100 is presented.

[0028] Figure 1B An example of an enlarged view of the upper surface of the semiconductor device 100 is shown.

[0029] Figure 1C Shows Figure 1B an example of the cross-section a-a' in

[0030] Figure 2A An example of the circuit structure of the semiconductor device 100 is shown.

[0031] Figure 2B A modified example of the circuit structure of the semiconductor device 100 is shown.

[0032] Figure 3A The waveforms of the collector current Ic' and the sense current Ise' flowing through the semiconductor device in the comparative example are shown.

[0033] Figure 3B The waveforms of the collector current Ic and the sense current Ise flowing through the semiconductor device 100 are shown.

[0034] Figure 4A An example of an enlarged view of the upper surface around the current sense pad 190 and the gate pad 150 is shown.

[0035] Figure 4B Shows Figure 4A an example of the cross-section b-b' in

[0036] Figure 5A Shows Figure 4A an example of the cross-section c-c' in

[0037] Figure 5B An example of a top view showing the diode element portion 61 is presented.

[0038] Figure 5C An example of a top view showing the resistor section 62.

[0039] Figure 6A Showing Figure 4A an example of the d-d' cross section in

[0040] Figure 6B Showing Figure 4A an example of the e-e' cross section in

[0041] Figure 7A An example of a manufacturing method of the semiconductor device 100 having the resistance adjustment section 60.

[0042] Figure 7B An example of a manufacturing method of the semiconductor device 100 having the resistance adjustment section 60.

[0043] Figure 8 Showing Figure 4A a modified example of the c-c' cross section in

[0044] Figure 9A Showing Figure 4A a modified example of the c-c' cross section in

[0045] Figure 9B Showing Figure 4A a modified example of the c-c' cross section in

[0046] Figure 10 An example of a top view showing the resistance adjustment section 60.

[0047] Symbol description 10 ··· Semiconductor substrate, 12 ··· Emitter region, 14 ··· Base region, 15 ··· Contact region, 16 ··· Accumulation region, 17 ··· Well region, 18 ··· Drift region, 20 ··· Buffer region, 21 ··· Front surface, 22 ··· Collector region, 23 ··· Back surface, 24 ··· Collector electrode, 25 ··· Connection portion, 30 ··· dummy trench portion, 32 ··· dummy insulating film, 34 ··· dummy conductive portion, 38 ··· Interlayer insulating film, 40 ··· Gate trench portion, 41 ··· Extension portion, 42 ··· Gate insulating film, 43 ··· Connection portion, 44 ··· Gate conductive portion, 52 ··· Emitter electrode, 53 ··· Contact hole, 54 ··· Contact hole, 55 ··· Contact hole, 56 ··· Contact hole, 57 ··· Contact hole, 60 ··· Resistance adjustment portion, 61 ··· Diode element portion, 62 ··· Resistance portion, 63 ··· Resistance region, 64 ··· Resistance adjustment insulating film, 65 ··· Resistance adjustment trench portion, 70 ··· Transistor portion, 71 ··· Step portion, 81 ··· First insulating portion, 82 ··· Second insulating portion, 83 ··· Third insulating portion, 90 ··· Current sensing portion, 91 ··· First polysilicon layer, 92 ··· Second polysilicon layer, 93 ··· Interface, 100 ··· Semiconductor device, 102 ··· Edge, 104 ··· Active portion, 106 ··· Peripheral portion, 110 ··· Front side metal layer, 120 ··· Back side lifetime control region, 130 ··· Anode pad, 132 ··· Anode wiring, 140 ··· Cathode pad, 142 ··· Cathode wiring, 150 ··· Gate pad, 152 ··· Gate metal wiring, 160 ··· Main adjustment portion, 161 ··· Main conduction side diode, 162 ··· Main cut-off side diode, 166 ··· Main conduction side resistance, 167 ··· Main cut-off side resistance, 171 ··· First contact portion, 172 ··· Second contact portion, 173 ··· Third contact portion, 180 ··· Temperature sensing portion, 190 ··· Current sensing pad, 194 ··· Gate conductive portion, 260 ··· Sensing adjustment portion, 261 ··· Sensing conduction side diode, 262 ··· Sensing cut-off side diode, 266 ··· Sensing conduction side resistance, 267 ··· Sensing cut-off side resistance, 271 ··· First opening, 272 ··· Second opening, 273 ··· Third opening, 361 ··· Cathode region, 362 ··· Anode region Detailed implementation mode

[0048] Hereinafter, the present invention will be described by way of embodiments of the invention. However, the following embodiments do not limit the invention claimed in the claims. In addition, all combinations of the features described in the embodiments are not necessarily essential to the technical solution of the invention.

[0049] In this specification, one side in the direction parallel to the depth direction of the semiconductor substrate is referred to as "front" or "upper", and the other side is referred to as "back" or "lower". One of the two main surfaces of the substrate, layer, or other component is referred to as the upper surface, and the other is referred to as the lower surface. The directions of "front", "upper", "back", and "lower" are not limited to the direction of gravity or the direction when mounting the semiconductor device.

[0050] In this specification, the right-angled coordinate axes of the X-axis, Y-axis, and Z-axis are sometimes used to explain technical matters. The right-angled coordinate axes only determine the relative positions of the components and do not limit a specific direction. For example, the Z-axis is not limited to representing the height direction relative to the ground. It should be noted that the +Z-axis direction and the -Z-axis direction are opposite directions to each other. When the Z-axis direction is described without indicating positive or negative, it refers to the direction parallel to the +Z-axis and -Z-axis. In addition, in this specification, sometimes observing from the +Z-axis direction is referred to as a top view.

[0051] In the case where it is described as "the same" or "equal" in this specification, it may also include the case having an error caused by manufacturing deviation or the like. This error is, for example, within 10%.

[0052] In this specification, the conductivity type of the doped region doped with impurities is described as P-type or N-type. However, the conductivity type of each doped region may also be of the opposite polarity respectively. In addition, when it is denoted as P+-type or N+-type in this specification, it means that the doping concentration is higher than that of the P-type or N-type, and when it is denoted as P--type or N--type, it means that the doping concentration is lower than that of the P-type or N-type.

[0053] In this specification, the doping concentration refers to the concentration of impurities activated as donors or acceptors. In this specification, sometimes the concentration difference between donors and acceptors is set to the concentration of the larger one of donors and acceptors. This concentration difference can be measured by the voltage-capacitance measurement method (CV method). In addition, the carrier concentration measured by the spreading resistance measurement method (SR) can be used as the concentration of donors or acceptors. In addition, when the concentration distribution of donors or acceptors has a peak, this peak value can be used as the concentration of donors or acceptors in this region. In the case where the concentration of donors or acceptors in the region where donors or acceptors exist is substantially uniform, etc., the average value of the donor concentration or acceptor concentration in this region can be used as the donor concentration or acceptor concentration.

[0054] Figure 1A An example of a top view showing the semiconductor device 100 is shown. The semiconductor device 100 is a semiconductor chip including a transistor portion 70. The semiconductor device 100 includes a temperature sensing portion 180 and can be mounted on a module such as an IPM (Intelligent Power Module).

[0055] The transistor section 70 includes transistors such as IGBT (Insulated Gate Bipolar Transistor). The transistor section 70 may be other transistors such as MOSFET. The semiconductor device 100 may be a reverse conducting IGBT (RC-IGBT: ReverseConducting IGBT, reverse conducting insulated gate bipolar transistor) having diodes such as free wheel diodes (FWD) on the same chip.

[0056] The semiconductor substrate 10 may be a silicon substrate, a silicon carbide substrate, or a nitride semiconductor substrate such as gallium nitride. The semiconductor substrate 10 in this example is a silicon substrate. The semiconductor substrate 10 has an active portion 104 and a peripheral portion 106. It should be noted that when only referred to as a top view in this specification, it means observing from the upper surface side of the semiconductor substrate 10. As described later, the semiconductor substrate 10 has a front surface 21 and a back surface 23.

[0057] The transistor section 70 is a region obtained by projecting the collector region provided on the lower surface side of the semiconductor substrate 10 onto the upper surface of the semiconductor substrate 10. The collector region has a second conductivity type. As an example, the collector region is a P+ type.

[0058] It should be noted that the transistor section 70 in this example has a trench portion extending in the Y-axis direction. However, the transistor section 70 may also have a trench portion extending in the X-axis direction.

[0059] The active portion 104 has the transistor section 70. The active portion 104 is a region where the main current flows between the upper surface and the lower surface of the semiconductor substrate 10 when the semiconductor device 100 is controlled to be in an on state. That is, it is a region where the current flows in the depth direction inside the semiconductor substrate 10 from the upper surface to the lower surface of the semiconductor substrate 10, or from the lower surface to the upper surface of the semiconductor substrate 10. In this specification, the transistor section 70 is referred to as an element portion or an element region.

[0060] It should be noted that when viewed from above, the region sandwiched by two element portions is also set as the active portion 104. In this example, the region where the gate metal wiring 152 is provided in a manner of being sandwiched by the element portions is also included in the active portion 104.

[0061] The gate metal wiring 152 is formed of a material containing metal. For example, the gate metal wiring 152 is formed of aluminum, an aluminum-silicon alloy, or an aluminum-silicon-copper alloy. The gate metal wiring 152 is electrically connected to the gate conductive portion of the transistor section 70 and supplies a gate voltage to the transistor section 70. The gate metal wiring 152 is provided to surround the outer periphery of the active portion 104 when viewed from above. The gate metal wiring 152 is electrically connected to the gate pad 150 provided on the peripheral portion 106.

[0062] The thickness and width of the gate metal wiring 152 may be non-uniform. The width of the gate metal wiring 152 may be formed to become smaller as the distance from the gate pad 150 becomes longer. In the resistance adjustment section described later, the width of the gate metal wiring 152 may be formed such that the width of the gate metal wiring 152 from the gate pad 150 to the resistance adjustment section is larger than the width of the gate metal wiring 152 from the resistance adjustment section to the transistor section 70. By changing the thickness and width of the gate metal wiring 152, the gate resistance of the current path from the gate pad 150 to the transistor section 70 can be finely adjusted.

[0063] The outer peripheral portion 106 is a region between the active portion 104 and the edge 102 of the semiconductor substrate 10 when viewed from above. The outer peripheral portion 106 is provided to surround the active portion 104 when viewed from above. One or more metal pads may be disposed in the outer peripheral portion 106, and the metal pads are used to connect the semiconductor device 100 to an external device using a wire or the like. It should be noted that the outer peripheral portion 106 may have an edge termination structure portion. The edge termination structure portion alleviates the electric field concentration on the upper surface side of the semiconductor substrate 10. For example, the edge termination structure portion has a guard ring, a field plate, a surface electric field reduction, and a structure formed by combining these.

[0064] The front-side metal layer 110 is disposed above the semiconductor substrate 10. The front-side metal layer 110 may include an emission electrode 52, an anode pad 130, a cathode pad 140, a gate pad 150, and a current sensing pad 190. The front-side metal layer 110 may be connected to an electrode outside the semiconductor device 100 by wire bonding or the like. It should be noted that the number and position of the front-side metal layer 110 are not limited to this example.

[0065] The gate pad 150 is disposed above the semiconductor substrate 10. The gate pad 150 is electrically connected to the gate conductive portion of the transistor section 70 via the gate metal wiring 152. The gate pad 150 is set to the gate potential. The gate pad 150 in this example is rectangular when viewed from above, but is not limited thereto.

[0066] The current sensing pad 190 is electrically connected to a current sensing section 90 described later. The current sensing pad 190 detects the current flowing through the current sensing section 90. The current sensing pad 190 in this example is rectangular when viewed from above, but is not limited thereto.

[0067] The anode pad 130 is electrically connected to the anode of the temperature sensing section 180. The anode pad 130 is connected to the anode of the temperature sensing section 180 via the anode wiring 132. The anode pad 130 in this example is rectangular when viewed from above, but is not limited thereto.

[0068] The cathode pad 140 is electrically connected to the cathode of the temperature sensing unit 180. The cathode pad 140 is connected to the cathode of the temperature sensing unit 180 through the cathode wiring 142. The cathode pad 140 in this example is rectangular in a top view, but is not limited thereto.

[0069] The temperature sensing unit 180 is provided above the active part 104. The temperature sensing unit 180 detects the temperature of the active part 104. The temperature sensing unit 180 may have a diode formed of single-crystalline silicon or polycrystalline silicon. The temperature sensing unit 180 is used to detect the temperature of the semiconductor device 100, thereby protecting the semiconductor chip from overheating. The temperature sensing unit 180 is connected to a constant current source. If the temperature of the semiconductor device 100 changes, the forward voltage of the current flowing through the temperature sensing unit 180 changes. The semiconductor device 100 can detect the temperature based on the change in the forward voltage. The temperature sensing unit 180 has a long side direction in the Y-axis direction and a short side direction in the X-axis direction, but is not limited thereto.

[0070] In a top view, the temperature sensing unit 180 in this example is provided near the center of the active part 104. The temperature sensing unit 180 is provided adjacent to the transistor part 70. A collector region of the second conductivity type may be provided on the back side of the semiconductor substrate 10 where the temperature sensing unit 180 is provided.

[0071] In a top view, the anode wiring 132 and the cathode wiring 142 are provided above the active part 104. In addition, the anode wiring 132 and the cathode wiring 142 are provided to extend from the temperature sensing unit 180 to the outer peripheral part 106. The anode wiring 132 and the cathode wiring 142 in this example are provided to extend along the Y-axis direction from the temperature sensing unit 180. The anode wiring 132 and the cathode wiring 142 may be made of the same material as the front side metal layer 110.

[0072] Figure 1B An example of an enlarged view of the upper surface of the semiconductor device 100 is shown. In this example, an enlarged view of the end of the active part 104 is shown.

[0073] The semiconductor device 100 in this example includes a gate trench part 40, a dummy trench part 30, an emitter region 12, a base region 14, a contact region 15, and a well region 17 on the front surface 21 of the semiconductor substrate 10. In addition, the semiconductor device 100 in this example includes an emitter electrode 52 and a gate metal wiring 152 provided above the front surface 21 of the semiconductor substrate 10. The gate trench part 40 is an example of a MOS gate structure included in the semiconductor device 100.

[0074] The emitter electrode 52 is provided above the gate trench part 40, the dummy trench part 30, the emitter region 12, the base region 14, the contact region 15, and the well region 17. In addition, the gate metal wiring 152 is provided above the connection part 25 and the well region 17.

[0075] The emission electrode 52 and the gate metal wiring 152 are formed of a metal-containing material. At least a part of the region of the emission electrode 52 can be formed of a metal such as aluminum (Al), or a metal alloy such as aluminum-silicon alloy (AlSi) or aluminum-silicon-copper alloy (AlSiCu). At least a part of the region of the gate metal wiring 152 can be formed of a metal such as aluminum (Al), or a metal alloy such as aluminum-silicon alloy (AlSi) or aluminum-silicon-copper alloy (AlSiCu). The emission electrode 52 and the gate metal wiring 152 can have a barrier metal layer formed of titanium or a titanium compound, etc. under the region formed of aluminum or the like. The barrier metal layer will be described later. The emission electrode 52 and the gate metal wiring 152 are provided separately from each other.

[0076] The emission electrode 52 and the gate metal wiring 152 are provided above the semiconductor substrate 10 with an interlayer insulating film 38 therebetween. In Figure 1B the interlayer insulating film 38 is omitted. Contact holes 54, 55, and 56 are formed through the interlayer insulating film 38.

[0077] The contact holes 53 and 55 electrically connect the gate metal wiring 152 to the gate conductive part in the transistor part 70 via the connection part 25. The contact hole 53 connects the gate conductive part of the gate trench part 40 to the connection part 25. The same material as the connection part 25 can be filled inside the contact hole 53. The contact hole 55 connects the connection part 25 to the gate metal wiring 152. A contact part formed of tungsten or the like can be formed inside the contact hole 55. The contact part will be described later.

[0078] The contact hole 56 connects the emission electrode 52 to the dummy conductive part in the dummy trench part 30. A contact part formed of tungsten or the like can be formed inside the contact hole 56.

[0079] The connection part 25 is connected to the front-side metal layer 110 such as the emission electrode 52 or the gate metal wiring 152. In one example, the connection part 25 is provided between the gate metal wiring 152 and the gate conductive part. The connection part 25 in this example can be provided to extend along the X-axis direction and is electrically connected to the gate conductive part. The connection part 25 can be provided between the emission electrode 52 and the dummy conductive part. In this example, the connection part 25 is not provided between the emission electrode 52 and the dummy conductive part. The connection part 25 is a conductive material such as polysilicon doped with impurities. The connection part 25 in this example is polysilicon doped with N-type impurities (N+). The connection part 25 can be a polysilicon layer formed by the same process as the first polysilicon layer 91 or the second polysilicon layer 92 described later. The connection part 25 can be provided above the front surface 21 of the semiconductor substrate 10 with an insulating film such as an oxide film therebetween.

[0080] The gate trench portion 40 is an example of a plurality of trench portions extending along a preset extension direction on the front surface 21 side of the semiconductor substrate 10. The gate trench portions 40 are arranged at a preset interval along a preset arrangement direction (in this example, the X-axis direction). The gate trench portion 40 of this example may have two extension portions 41 extending along an extension direction parallel to the front surface 21 of the semiconductor substrate 10 and perpendicular to the arrangement direction (in this example, the Y-axis direction), and a connection portion 43 connecting the two extension portions 41.

[0081] Preferably, at least a part of the connection portion 43 is formed in a curved shape. By connecting the ends of the two extension portions 41 of the gate trench portion 40, the electric field concentration at the ends of the extension portions 41 can be alleviated. In the connection portion 43 of the gate trench portion 40, the gate metal wiring 152 can be electrically connected to the gate conductive portion with the connection portion 25 interposed therebetween.

[0082] The dummy trench portion 30 is an example of a plurality of trench portions extending along a preset extension direction on the front surface 21 side of the semiconductor substrate 10. The dummy trench portion 30 is a trench portion electrically connected to the emission electrode 52. The dummy trench portion 30 is arranged at a preset interval along a preset arrangement direction (in this example, the X-axis direction) in the same manner as the gate trench portion 40. The dummy trench portion 30 of this example has an I shape on the front surface 21 of the semiconductor substrate 10, but may also have a U shape on the front surface 21 of the semiconductor substrate 10 in the same manner as the gate trench portion 40. That is, the dummy trench portion 30 may have two extension portions extending along the extension direction and a connection portion connecting the two extension portions.

[0083] The transistor portion 70 of this example has a structure in which two gate trench portions 40 and two dummy trench portions 30 are repeatedly arranged. That is, the transistor portion 70 of this example has the gate trench portion 40 and the dummy trench portion 30 at a ratio of 1:1. For example, the transistor portion 70 has a dummy trench portion 30 between two extension portions 41.

[0084] However, the ratio of the gate trench portion 40 to the dummy trench portion 30 is not limited to this example. The ratio of the gate trench portion 40 may be greater than the ratio of the dummy trench portion 30, and the ratio of the dummy trench portion 30 may be greater than the ratio of the gate trench portion 40. The ratio of the gate trench portion 40 to the dummy trench portion 30 may be 2:3 or 2:4. In addition, the transistor portion 70 may also use all the trench portions as the gate trench portion 40 and not have the dummy trench portion 30.

[0085] The well region 17 is a region of a second conductivity type provided closer to the front surface 21 side of the semiconductor substrate 10 than the drift region 18 described later. The well region 17 is an example of a well region provided on the peripheral side of the active portion 104. As an example, the well region 17 is of P+ type. The well region 17 is formed within a preset range starting from the end on the side of the active region where the gate metal wiring 152 is provided. The diffusion depth of the well region 17 can be deeper than the depths of the gate trench portion 40 and the dummy trench portion 30. A part of the regions on the gate metal wiring 152 side of the gate trench portion 40 and the dummy trench portion 30 are formed within the well region 17. The bottoms of the ends in the extending direction of the gate trench portion 40 and the dummy trench portion 30 can be covered by the well region 17.

[0086] The contact holes 54 are formed above the regions of the emitter region 12 and the contact region 15 in the transistor portion 70. The contact holes 54 are not provided above the well regions 17 provided at both ends in the Y-axis direction. Thus, one or more contact holes 54 are formed in the interlayer insulating film. The one or more contact holes 54 can be provided to extend along the extending direction.

[0087] The mesa portion 71 is a mesa portion provided adjacent to the trench portion in a plane parallel to the front surface 21 of the semiconductor substrate 10. The mesa portion refers to the portion of the semiconductor substrate 10 clamped by two adjacent trench portions, and can be the portion from the front surface 21 of the semiconductor substrate 10 to the depth of the deepest bottom of each trench portion. The extending portions of each trench portion can be set as one trench portion. That is, the region clamped by the two extending portions can be set as the mesa portion.

[0088] The mesa portion 71 is provided adjacent to at least one of the dummy trench portion 30 and the gate trench portion 40 in the transistor portion 70. The mesa portion 71 has the well region 17, the emitter region 12, the base region 14, and the contact region 15 on the front surface 21 of the semiconductor substrate 10. In the mesa portion 71, the emitter region 12 and the contact region 15 are alternately provided in the extending direction.

[0089] The base region 14 is a region of a second conductivity type provided on the front surface 21 side of the semiconductor substrate 10. As an example, the base region 14 is of P- type. The base region 14 can be provided at both ends in the Y-axis direction of the mesa portion 71 on the front surface 21 of the semiconductor substrate 10. It should be noted that Figure 1B only one end in the Y-axis direction of the base region 14 is shown.

[0090] The emitter region 12 is a region of a first conductivity type having a doping concentration higher than that of the drift region 18. As an example, the emitter region 12 in this example is of N+ type. An example of the dopant of the emitter region 12 is arsenic (As). The emitter region 12 is disposed in contact with the front surface 21 of the mesa portion 71 and the gate trench portion 40. The emitter region 12 can be arranged to extend from one of the two trench portions sandwiching the mesa portion 71 in the X-axis direction to the other trench portion. The emitter region 12 is also disposed below the contact hole 54.

[0091] In addition, the emitter region 12 may or may not be in contact with the dummy trench portion 30. The emitter region 12 in this example is in contact with the dummy trench portion 30.

[0092] The contact region 15 is a region of a second conductivity type disposed above the base region 14 and having a doping concentration higher than that of the base region 14. As an example, the contact region 15 in this example is of P+ type. The contact region 15 in this example is disposed on the front surface 21 of the mesa portion 71. The contact region 15 can be arranged to extend from one of the two trench portions sandwiching the mesa portion 71 in the X-axis direction to the other trench portion. The contact region 15 may or may not be in contact with the gate trench portion 40 or the dummy trench portion 30. The contact region 15 in this example is in contact with the dummy trench portion 30 and the gate trench portion 40. The contact region 15 is also disposed below the contact hole 54.

[0093] Figure 1C Shows Figure 1B An example of the a-a' cross-section. The a-a' cross-section is the XZ plane passing through the emitter region 12 in the transistor portion 70. The semiconductor device 100 in this example has a semiconductor substrate 10, an interlayer insulating film 38, an emitter electrode 52, and a collector electrode 24 in the a-a' cross-section. The collector electrode 24 is an example of a back-side metal layer disposed in contact with the back surface 23 of the semiconductor substrate 10. The emitter electrode 52 is formed above the semiconductor substrate 10 and the interlayer insulating film 38.

[0094] The drift region 18 is a region of a first conductivity type disposed in the semiconductor substrate 10. As an example, the drift region 18 in this example is of N- type. The drift region 18 may be a region remaining in the semiconductor substrate 10 without forming other doped regions. That is, the doping concentration of the drift region 18 may be the doping concentration of the semiconductor substrate 10.

[0095] The buffer region 20 is a region of a first conductivity type provided closer to the back surface 23 side of the semiconductor substrate 10 than the drift region 18. As an example, the buffer region 20 in this example is of N type. The doping concentration of the buffer region 20 is higher than that of the drift region 18. The buffer region 20 can function as a field stop layer that prevents the depletion layer extending from the lower surface side of the base region 14 from reaching the collector region 22 of the second conductivity type. It should be noted that the buffer region 20 can be omitted.

[0096] The collector region 22 is provided below the buffer region 20 in the transistor portion 70. The collector region 22 has a second conductivity type. As an example, the collector region 22 in this example is of P+ type.

[0097] The collector electrode 24 is formed on the back surface 23 of the semiconductor substrate 10. The collector electrode 24 is formed of a conductive material such as metal. The material of the collector electrode 24 can be the same as or different from the material of the emitter electrode 52.

[0098] The base region 14 is a region of a second conductivity type provided above the drift region 18. The base region 14 is provided in contact with the gate trench portion 40. The base region 14 can be provided in contact with the dummy trench portion 30.

[0099] The emitter region 12 is provided above the base region 14. The emitter region 12 is provided between the base region 14 and the front surface 21. The emitter region 12 is provided in contact with the gate trench portion 40. The emitter region 12 can be in contact with the dummy trench portion 30 or not in contact with the dummy trench portion 30.

[0100] The accumulation region 16 is a region of a first conductivity type provided closer to the front surface 21 side of the semiconductor substrate 10 than the drift region 18. As an example, the accumulation region 16 in this example is of N+ type. However, the accumulation region 16 can be omitted.

[0101] The accumulation region 16 is provided in contact with the gate trench portion 40. The accumulation region 16 can be in contact with the dummy trench portion 30 or not in contact with the dummy trench portion 30. The doping concentration of the accumulation region 16 is higher than that of the drift region 18. The ion implantation dose of the accumulation region 16 can be 1.0E+12 cm -2 or more and 1.0E+13 cm -2 or less. In addition, the ion implantation dose of the accumulation region 16 can be 3.0E+12 cm -2 or more and 6.0E+12 cm -2 or less. By providing the accumulation region 16, the carrier injection enhancement effect (IE effect) can be improved, and the on-voltage of the transistor portion 70 can be reduced.

[0102] One or more gate trench portions 40 and one or more dummy trench portions 30 are provided on the front surface 21. Each trench portion is provided from the front surface 21 to the drift region 18. In a region where at least any one of the emitter region 12, the base region 14, the contact region 15, and the storage region 16 is provided, each trench portion also penetrates these regions and reaches the drift region 18. The method in which the trench portion penetrates the doped region is not limited to the method obtained by manufacturing in the order of forming the doped region after forming the trench portion. A structure in which a doped region is formed between trench portions after forming the trench portions is also included in the method in which the trench portion penetrates the doped region.

[0103] The gate trench portion 40 has a gate trench formed on the front surface 21, a gate insulating film 42, and a gate conductive portion 44. The gate insulating film 42 is formed so as to cover the inner wall of the gate trench. The gate insulating film 42 can be formed by oxidizing or nitriding the semiconductor on the inner wall of the gate trench. The gate conductive portion 44 is formed inside the gate trench at a position closer to the inside than the gate insulating film 42. The gate insulating film 42 insulates the gate conductive portion 44 from the semiconductor substrate 10. The gate conductive portion 44 is formed of a conductive material such as polysilicon. The gate trench portion 40 is covered with an interlayer insulating film 38 on the front surface 21.

[0104] The gate conductive portion 44 includes a region facing the base region 14 adjacent to the mesa portion 71 side with the gate insulating film 42 interposed therebetween in the depth direction of the semiconductor substrate 10. If a predetermined voltage is applied to the gate conductive portion 44, a channel formed by an inversion layer of electrons is formed on the surface layer of the interface in the base region 14 that contacts the gate trench.

[0105] The dummy trench portion 30 may have the same structure as the gate trench portion 40. The dummy trench portion 30 has a dummy trench formed on the front surface 21 side, a dummy insulating film 32, and a dummy conductive portion 34. The dummy insulating film 32 is formed so as to cover the inner wall of the dummy trench. The dummy conductive portion 34 is formed inside the dummy trench and at a position closer to the inside than the dummy insulating film 32. The dummy insulating film 32 insulates the dummy conductive portion 34 from the semiconductor substrate 10. The dummy trench portion 30 may be covered with the interlayer insulating film 38 on the front surface 21.

[0106] The interlayer insulating film 38 is provided above the semiconductor substrate 10. The interlayer insulating film 38 in this example is provided in contact with the front surface 21. An emitter electrode 52 is provided above the interlayer insulating film 38. One or more contact holes 54 for electrically connecting the emitter electrode 52 to the semiconductor substrate 10 are provided in the interlayer insulating film 38. The contact hole 53, the contact hole 55, and the contact hole 56 may also be provided so as to penetrate the interlayer insulating film 38 in the same manner. The film thickness of the interlayer insulating film 38 may be 0.8 μm or more and 1.2 μm or less.

[0107] The interlayer insulating film 38 can be a silicon oxide film. The interlayer insulating film 38 can be a BPSG (Boro-phosphoSilicate Glass) film, or a BSG (borosilicate glass) film, or a PSG (Phosphosilicate glass) film. The interlayer insulating film 38 can include a high temperature oxide (HTO: High Temperature Oxide) film.

[0108] The back-side lifetime control region 120 can be provided in the transistor portion 70. However, the back-side lifetime control region 120 can be omitted. The back-side lifetime control region 120 is a region where a lifetime inhibitor is intentionally formed by implanting impurities or the like into the interior of the semiconductor substrate 10. In one example, the back-side lifetime control region 120 is formed by implanting helium into the semiconductor substrate 10. The back-side lifetime control region 120 can also be formed by implanting protons. By providing the back-side lifetime control region 120, the turn-off time is reduced and the tail current is suppressed, thereby reducing the loss during switching.

[0109] The lifetime inhibitor is a recombination center of carriers. The lifetime inhibitor can be a lattice defect. For example, the lifetime inhibitor can be a vacancy, a multi-vacancy, a composite defect of these and the elements constituting the semiconductor substrate 10, or a dislocation. In addition, the lifetime inhibitor can be a noble gas element such as helium or neon, or a metal element such as platinum. The formation of lattice defects can use an electron beam or protons.

[0110] The lifetime inhibitor concentration refers to the concentration of the recombination center of carriers. The lifetime inhibitor concentration can be the concentration of lattice defects. For example, the lifetime inhibitor concentration can be the vacancy concentration of vacancies, multi-vacancies, etc., or the composite defect concentration of these vacancies and the elements constituting the semiconductor substrate 10, or can also be the dislocation concentration. In addition, the lifetime inhibitor concentration can also be the chemical concentration of noble gas elements such as helium or neon, or can also be the chemical concentration of metal elements such as platinum.

[0111] The back-side lifetime control region 120 is provided at a position closer to the back surface 23 side than the center of the semiconductor substrate 10 in the depth direction of the semiconductor substrate 10. The back-side lifetime control region 120 of this example is provided in the buffer region 20. The back-side lifetime control region 120 can be formed without using a mask, so as to be provided over the entire surface of the semiconductor substrate 10 in the XY plane. The back-side lifetime control region 120 can be formed by using a mask, so as to be provided in a part of the semiconductor substrate 10 in the XY plane. The dose of the impurity used to form the back-side lifetime control region 120 can be 0.5E+10 cm -2 or more and 1.0E+14 cm -2Hereinafter, it may also be 5.0E+10 cm -2 or more and 1.0E+13 cm -2 or less.

[0112] The back-side lifetime control region 120 can be formed by implantation from the back-side 23. Thereby, it is easy to avoid the influence on the front-side 21 of the semiconductor device 100. For example, the back-side lifetime control region 120 is formed by irradiating helium or protons from the back-side 23. Here, the state of the front-side 21 can be obtained by using the SR method or measuring the leakage current, and it can be determined whether the back-side lifetime control region 120 is formed by implantation from the front-side 21 or by implantation from the back-side 23.

[0113] Figure 2A An example of the circuit structure of the semiconductor device 100 is shown. The semiconductor device 100 in this example includes a resistance adjustment unit 60. In the semiconductor device 100, the transistor unit 70 and the current sensing unit 90 are connected in parallel with each other.

[0114] The resistance adjustment unit 60 is electrically connected to the gate pad 150 and adjusts the gate resistance of the transistor unit 70 and the current sensing unit 90. The resistance adjustment unit 60 has a main adjustment unit 160 and a sensing adjustment unit 260.

[0115] The main adjustment unit 160 is electrically connected to the gate conductive part 44 of the transistor unit 70. The sensing adjustment unit 260 is electrically connected to the gate conductive part 194 of the current sensing unit 90. The gate conductive part 194 will be described later. The main adjustment unit 160 and the sensing adjustment unit 260 each include a diode element part 61 and a resistance part 62.

[0116] The diode element part 61 has a plurality of diodes arranged in anti-parallel. The diode element part 61 has a plurality of diodes arranged in anti-parallel, so that the gate wiring for turning on the gates of the transistor unit 70 and the current sensing unit 90 and the gate wiring for turning off the gates can be set as different paths. Thereby, different resistance values can be set according to the on and off of the gates.

[0117] The resistance part 62 is connected to the diode element part 61. The resistance part 62 has a resistance value such that the transistor unit 70 turns on earlier than the current sensing unit 90 and turns off later than the current sensing unit 90. The resistance value of the resistance part 62 can be set in consideration of the built-in gate resistance of the transistor unit 70 and the built-in gate resistance of the current sensing unit 90. The built-in gate resistance may refer to the parasitic gate resistance generated by the gate wiring resistance or the like.

[0118] The main adjustment unit 160 includes a main conduction-side diode 161 and a main cut-off-side diode 162 as the diode element unit 61. The main conduction-side diode 161 and the main cut-off-side diode 162 are connected in reverse parallel between the gate pad 150 and the gate conductive part 44. The main adjustment unit 160 includes a main cut-off-side resistor 167 as the resistor unit 62.

[0119] The anode of the main conduction-side diode 161 is electrically connected to the gate pad 150, and the cathode is electrically connected to the gate conductive part 44 of the transistor unit 70. The anode of the main cut-off-side diode 162 is electrically connected to the gate conductive part 44 of the transistor unit 70, and the cathode is electrically connected to the gate pad 150.

[0120] The main cut-off-side resistor 167 is connected in series with the main cut-off-side diode 162 between the gate pad 150 and the gate conductive part 44. In this example, the main cut-off-side resistor 167 is electrically connected between the anode of the main cut-off-side diode 162 and the gate conductive part 44 of the transistor unit 70. The main cut-off-side resistor 167 may also be connected between the cathode of the main cut-off-side diode 162 and the gate pad 150. The main cut-off-side resistor 167 can be set to be slower than the cut-off operation of the cut-off operation ratio current sensing unit 90 of the transistor unit 70.

[0121] The main adjustment unit 160 of this example only adjusts the gate resistor on the cut-off side and does not adjust the gate resistor on the conduction side. However, the main adjustment unit 160 can adjust the gate resistors on both the conduction side and the cut-off side, or can also only adjust the gate resistor on the conduction side.

[0122] The sensing adjustment unit 260 includes a sensing conduction-side diode 261 and a sensing cut-off-side diode 262 as the diode element unit 61. The sensing conduction-side diode 261 and the sensing cut-off-side diode 262 are connected in reverse parallel between the gate pad 150 and the gate conductive part 194. The sensing adjustment unit 260 includes a sensing conduction-side resistor 266 as the resistor unit 62.

[0123] The anode of the sensing conduction-side diode 261 is electrically connected to the gate pad 150, and the cathode is electrically connected to the gate conductive part 194 of the current sensing unit 90. The anode of the sensing cut-off-side diode 262 is electrically connected to the gate conductive part 194 of the current sensing unit 90, and the cathode is electrically connected to the gate pad 150.

[0124] The conduction-side resistor 266 for sensing is connected in series with the conduction-side diode 261 for sensing between the gate pad 150 and the gate conductive part 194. The conduction-side resistor 266 for sensing in this example is electrically connected between the cathode of the conduction-side diode 261 for sensing and the gate conductive part 194 of the current sensing part 90. The conduction-side resistor 266 for sensing may also be connected between the anode of the conduction-side diode 261 for sensing and the gate pad 150. The conduction-side resistor 266 for sensing can be set to have a slower conduction operation than that of the transistor part 70 in the current sensing part 90.

[0125] The sensing adjustment part 260 in this example only adjusts the gate resistor on the conduction side and does not adjust the gate resistor on the turn-off side. However, the sensing adjustment part 260 can adjust the gate resistors on both the conduction side and the turn-off side, or can also only adjust the gate resistor on the turn-off side.

[0126] The semiconductor device 100 in this example can adjust the switching speeds of the transistor part 70 and the current sensing part 90 by including the resistor adjustment part 60. Thereby, the semiconductor device 100 can suppress gate oscillation within the chip.

[0127] Figure 2B A modified example of the circuit structure of the semiconductor device 100 is shown. The difference between the semiconductor device 100 in this example and Figure 2A the embodiment of [is that it] includes the main conduction-side resistor 166 and the sensing turn-off-side resistor 267. In this example, the points different from Figure 2A the embodiment of [are] particularly described.

[0128] The main conduction-side resistor 166 is electrically connected between the cathode of the main conduction-side diode 161 and the gate conductive part 44 of the transistor part 70. That is, the main conduction-side resistor 166 can be connected in series with the main conduction-side diode 161 between the gate pad 150 and the gate conductive part 44, and is connected in parallel with the main turn-off-side resistor 167. The main conduction-side resistor 166 may also be electrically connected between the anode of the main conduction-side diode 161 and the gate pad 150.

[0129] The sensing turn-off-side resistor 267 is electrically connected between the anode of the sensing turn-off-side diode 262 and the gate conductive part 194 of the current sensing part 90. That is, the sensing turn-off-side resistor 267 can be connected in series with the sensing turn-off-side diode 262 between the gate pad 150 and the gate conductive part 194, and is connected in parallel with the conduction-side resistor 266 for sensing. The sensing turn-off-side resistor 267 may also be connected between the cathode of the sensing turn-off-side diode 262 and the gate pad 150.

[0130] The semiconductor device 100 of this example can further adjust the switching speed during the turn-on operation of the transistor section 70 and the switching speed during the turn-off operation of the current sensing section 90. That is, the semiconductor device 100 of this example can adjust the switching speed during the turn-on and turn-off operations of the transistor section 70 and adjust the switching speed during the turn-on and turn-off operations of the current sensing section 90.

[0131] The resistance adjustment section 60 has a resistance value such that the transistor section 70 turns on earlier than the current sensing section 90 and the transistor section 70 turns off later than the current sensing section 90. The resistance value of the main turn-on side resistor 166 can be smaller than the resistance value of the sensing turn-on side resistor 266. The resistance value of the main turn-on side resistor 166 can be 5 times or more and 100 times or less the resistance value of the sensing turn-on side resistor 266. The resistance value of the main turn-off side resistor 167 can be greater than the resistance value of the sensing turn-off side resistor 267. The resistance value of the main turn-off side resistor 167 can be 1 time or more and 10 times or less the resistance value of the sensing turn-off side resistor 267.

[0132] Figure 3A The waveforms of the collector current Ic' and the sense current Ise' flowing through the semiconductor device of the comparative example are shown. In the comparative example, when the gate voltage Vge' is turned off, the sense current Ise' turns off after the collector current Ic'. Thus, if the turn-off of the sensing section is later than the turn-off of the main transistor section, current flows into the sensing section, and sometimes the current sensing section is damaged or an oscillation phenomenon occurs. Similarly, if the turn-on of the sensing section is earlier than the turn-on of the main transistor section, current flows into the sensing section, and sometimes the current sensing section is damaged or an oscillation phenomenon occurs.

[0133] Figure 3B The waveforms of the collector current Ic and the sense current Ise flowing through the semiconductor device 100 are shown. In this example, when the gate voltage Vge is turned off, the sense current Ise of the current sensing section 90 turns off earlier than the collector current Ic of the transistor section 70. Thus, the semiconductor device 100 can avoid damage to the current sensing section 90 by adjusting the switching speed such that the turn-off of the current sensing section 90 is earlier than the turn-off of the transistor section 70. Similarly, the semiconductor device 100 can also avoid damage to the current sensing section 90 by adjusting the switching speed such that the turn-on of the current sensing section 90 is simultaneous with or later than the turn-on of the transistor section 70.

[0134] Figure 4A An example of an enlarged view of the upper surface around the current sensing pad 190 and the gate pad 150 is shown. All the trench portions of the transistor section 70 of this example are gate trench portions 40, but dummy trench portions 30 can also be provided. The structure of the transistor section 70 can be the same as Figure 1Bis the same as the semiconductor device 100. The semiconductor device 100 includes a current sensing unit 90 and a resistance adjusting unit 60.

[0135] The current sensing unit 90 detects the current flowing through the transistor unit 70. The trench structure of the current sensing unit 90 is provided below the current sensing pad 190. The current sensing unit 90 has a structure corresponding to the transistor unit 70 and simulates the operation of the transistor unit 70. Since a current proportional to the current flowing through the transistor unit 70 flows through the current sensing unit 90, the current sensing unit 90 can be used to monitor the current flowing through the transistor unit 70. Thereby, the transistor unit 70 can be protected from overcurrent.

[0136] The gate pad 150 can be provided in the transistor unit 70 and the current sensing unit 90 in a unified manner. That is, a common gate control signal can be input to the transistor unit 70 and the current sensing unit 90. The gate pad 150 is connected to the main adjustment unit 160 and the sensing adjustment unit 260 through the gate metal wiring 152.

[0137] The main adjustment unit 160 can be provided adjacent to the transistor unit 70. The main adjustment unit 160 in this example is provided to be farther from the gate pad 150 than the current sensing pad 190, but it can also be provided to be closer to the gate pad 150 than the current sensing pad 190. The main adjustment unit 160 can be connected to the transistor unit 70 using at least one of the connection part 25 and the gate metal wiring 152. The main adjustment unit 160 in this example is connected to the transistor unit 70 through the connection part 25.

[0138] The main conduction side diode 161 and the main turn-off side diode 162 can be arranged adjacent to each other. The adjacent arrangement may mean that there is no gate metal wiring 152 between the main conduction side diode 161 and the main turn-off side diode 162. The main conduction side diode 161 and the main turn-off side diode 162 in this example are arranged in the extending direction of the trench, but it is not limited thereto.

[0139] The sensing adjustment unit 260 can be provided adjacent to the current sensing pad 190. That is, the gate metal wiring 152 can be not provided between the sensing adjustment unit 260 and the current sensing pad 190. The sensing adjustment unit 260 in this example is provided between the current sensing pad 190 and the gate pad 150, but it is not limited thereto. The sensing adjustment unit 260 can be connected to the current sensing unit 90 using at least one of the connection part 25 and the gate metal wiring 152. The sensing adjustment unit 260 in this example is connected to the current sensing unit 90 through the connection part 25.

[0140] The conduction-side diode 261 for sensing and the cutoff-side diode 262 for sensing may be arranged adjacent to each other. That is, no gate metal wiring 152 needs to be provided between the conduction-side diode 261 for sensing and the cutoff-side diode 262 for sensing. The conduction-side diode 261 for sensing and the cutoff-side diode 262 for sensing in this example are arranged in the extending direction of the trench, but are not limited thereto.

[0141] The gate metal wiring 152 may connect the gate pad 150 and the resistance adjustment section 60. In this example, the gate metal wiring 152 connects each of the main conduction-side diode 161, the main cutoff-side diode 162, the conduction-side diode 261 for sensing, and the cutoff-side diode 262 for sensing to the gate pad 150. The gate metal wiring 152 may be connected to the main adjustment section 160 using the third contact portion 173 provided in the contact hole 55.

[0142] The resistance adjustment section 60 may have a stacked structure in which a diode element section 61 and a resistance section 62 are stacked. By stacking the diode element section 61 and the resistance section 62, the area of the resistance adjustment section 60 is enlarged, thereby enabling the improvement of the ESD breakdown tolerance. The main conduction-side diode 161 may be provided in a stacked manner with the main conduction-side resistance 166. The main cutoff-side diode 162 may be provided in a stacked manner with the main cutoff-side resistance 167. The conduction-side diode 261 for sensing may be provided in a stacked manner with the conduction-side resistance 266 for sensing. The cutoff-side diode 262 for sensing may be provided in a stacked manner with the cutoff-side resistance 267 for sensing.

[0143] Here, the switching speeds of the transistor section 70 and the current sensing section 90 sometimes vary depending on their areas and the like. The area of the current sensing section 90 is sometimes restricted according to the chip size, the arrangement position of the pads, and the like. Since the semiconductor device 100 in this example can adjust the switching speed according to the capacitance ratio based on the areas of the transistor section 70 and the current sensing section 90 and the like, it is possible to suppress gate oscillation in the chip regardless of the chip layout.

[0144] Figure 4B Shows Figure 4A An example of the b-b' cross section in. The b-b' cross section is the XZ plane passing through the emitter region 12 in the current sensing section 90. The semiconductor device 100 in this example has a semiconductor substrate 10, an interlayer insulating film 38, a current sensing pad 190, and a collector electrode 24 in the b-b' cross section. The current sensing pad 190 is formed above the semiconductor substrate 10 and the interlayer insulating film 38. The current sensing section 90 may have a contact region 15 in the same manner as the transistor section 70.

[0145] Figure 5A Shows Figure 4AAn example of the c-c' cross-section. The resistance adjustment unit 60 in this example has a stacked structure in which a diode element unit 61 and a resistance unit 62 are stacked. The c-c' cross-section is the YZ plane passing through the first contact portion 171 and the second contact portion 172 in the resistance adjustment unit 60. The c-c' cross-section is shown in Figure 4A the region of the conduction-side diode 261 for sensing in the resistance adjustment unit 60, but the cross-sections of the main conduction-side diode 161, the main cut-off-side diode 162, and the sensing cut-off-side diode 262 may be the same.

[0146] The diode element unit 61 is disposed above the resistance unit 62. In this example, the diode element unit 61 is disposed above the resistance unit 62 with the second insulating portion 82 therebetween. The diode element unit 61 may be disposed below the resistance unit 62. The diode element unit 61 may be any one of the main conduction-side diode 161, the main cut-off-side diode 162, the sensing conduction-side diode 261, and the sensing cut-off-side diode 262. The resistance unit 62 may be any one of the main conduction-side resistance 166, the main cut-off-side resistance 167, the sensing conduction-side resistance 266, and the sensing cut-off-side resistance 267.

[0147] The first contact portion 171 is provided to connect the front-side metal layer 110 to the diode element unit 61. In this example, the first contact portion 171 connects the gate metal wiring 152 to the diode element unit 61. The first contact portion 171 is provided to extend from the upper end of the interlayer insulating film 38 through the diode element unit 61, the second insulating portion 82, and the resistance unit 62 to the upper end of the first insulating portion 81. The material of the first contact portion 171 may be the same as that of the front-side metal layer 110. The first contact portion 171 may contain a plug component such as tungsten or may contain a barrier metal. The first contact portion 171 is disposed in the first opening 271.

[0148] The second contact portion 172 is provided to connect the front-side metal layer 110 to the resistance unit 62. In this example, the second contact portion 172 connects the diode element unit 61 to the resistance unit 62. The second contact portion 172 is provided to extend from the upper end of the interlayer insulating film 38 through the diode element unit 61, the second insulating portion 82, and the resistance unit 62 to the upper end of the first insulating portion 81. The material of the second contact portion 172 may be the same as that of the front-side metal layer 110. The second contact portion 172 may contain a plug component such as tungsten or may contain a barrier metal. The second contact portion 172 is disposed in the second opening 272.

[0149] The first opening 271 and the second opening 272 can be formed using a common etching process. That is, the depths of the first opening 271 and the second opening 272 can be the same. The first opening 271 and the second opening 272 can be formed using the same etching process as the contact holes of the transistor section 70. For example, the first opening 271 and the second opening 272 are formed using the same etching process as the contact hole 54, the contact hole 55, and the contact hole 56.

[0150] The first insulating section 81 is disposed above the semiconductor substrate 10. The first insulating section 81 can be an oxide film such as an HTO film. The resistance section 62 of this example is disposed on the first insulating section 81.

[0151] The second insulating section 82 is disposed above the first insulating section 81. The second insulating section 82 can be an oxide film such as an HTO film. The second insulating section 82 can be used to separate the stacked diode element section 61 and the resistance section 62.

[0152] The interlayer insulating film 38 can be disposed above the first insulating section 81 and the second insulating section 82. The interlayer insulating film 38 can be formed using a process common to the interlayer insulating film 38 of the transistor section 70 and the current sensing section 90, or can be formed using a different process. The thickness of the interlayer insulating film 38 can be thicker than the thickness of the first insulating section 81, or can be thicker than the thickness of the second insulating section 82. A gate metal wiring 152 can be disposed on the interlayer insulating film 38.

[0153] The third insulating section 83 is disposed around the first contact section 171 to electrically isolate the first contact section 171 from the resistance section 62. The third insulating section 83 can be formed using the same process as the second insulating section 82. The material of the third insulating section 83 can be the same as the material of the second insulating section 82.

[0154] The diode element section 61 and the resistance section 62 can be formed of polysilicon. The diode element section 61 can be formed of a second polysilicon layer 92, and the resistance section 62 can be formed of a first polysilicon layer 91.

[0155] The first polysilicon layer 91 is disposed on the first insulating section 81. The first polysilicon layer 91 can be a polysilicon layer formed using a process common to at least one of the gate conductive section 44 and the gate conductive section 194. The first polysilicon layer 91 can be polysilicon formed using a process common to the connection section 25. The polysilicon formed using a common process can be polysilicon formed simultaneously using the same mask. The thickness of the first polysilicon layer 91 can be 0.5 μm or more and 1 μm or less.

[0156] The second polysilicon layer 92 is disposed on the second insulating portion 82. The second polysilicon layer 92 may be polysilicon formed using the same process as the temperature sensing diode of the temperature sensing unit 180. The thickness of the second polysilicon layer 92 may be thinner than the thickness of the first polysilicon layer 91. That is, the thickness of the resistance portion 62 may be thinner than the thickness of the diode element portion 61. The thickness of the second polysilicon layer 92 may be 0.3 μm or more and 0.7 μm or less.

[0157] Figure 5B An example of a top view showing the diode element portion 61 is shown. The diode element portion 61 has a P-type region and an N-type region provided in the second polysilicon layer 92. The diode element portion 61 in this example has one PN junction, but may also have a plurality of PN junctions connected in series. The PN junction of the diode element portion 61 may be formed by ion implantation. The P-type region and the N-type region may be formed by ion implantation, respectively. The P-type region and the N-type region may also be formed by ion implanting the other conductivity type after depositing a polysilicon layer of one of the P-type and N-type conductivity types.

[0158] The structure of the diode element portion 61 in this example may be at least one of the main conduction side diode 161, the main turn-off side diode 162, the sensing conduction side diode 261, and the sensing turn-off side diode 262. The structures of the main conduction side diode 161, the main turn-off side diode 162, the sensing conduction side diode 261, and the sensing turn-off side diode 262 may be the same or different from each other.

[0159] Figure 5C An example of a top view showing the resistance portion 62 is shown. The resistance portion 62 has the first polysilicon layer 91 connected to the second contact portion 172. The resistance portion 62 in this example has a resistance region 63 for adjusting the gate resistance. The resistance portion 62 may adjust the resistance according to the shape of the first polysilicon layer 91 or may adjust the resistance according to the doping concentration of the first polysilicon layer 91. The resistance region 63 in this example has a region where the first polysilicon layer 91 meanders in the XY plane. The first polysilicon layer 91 may be P-type or N-type.

[0160] Figure 6A Shows Figure 4A An example of the d-d' cross-section in. The d-d' cross-section is the XZ plane of the connection portion 25 for connecting the resistance adjustment portion 60 and the transistor portion 70. The d-d' cross-section passes through the first contact portion 171 and the third contact portion 173.

[0161] When viewed from above, the diode element portion 61 may or may not overlap with the connection portion 25. In this example, the diode element portion 61 overlaps with the connection portion 25 and is provided above the connection portion 25. The diode element portion 61 and the connection portion 25 may be separated by the second insulating portion 82. The connection portion 25 may be connected to the gate metal wiring 152 via the third contact portion 173.

[0162] The third contact portion 173 is used to connect the gate metal wiring 152 to the connection portion 25. The third contact portion 173 is provided to extend from the upper end of the interlayer insulating film 38 through the connection portion 25 to the upper end of the first insulating portion 81. The third contact portion 173 may also not penetrate the connection portion 25 and terminate at the upper surface of the connection portion 25. The material of the third contact portion 173 may be the same as that of the front-side metal layer 110. The third contact portion 173 may contain a plug member such as tungsten or may contain a barrier metal. The third contact portion 173 is provided in the contact hole 55.

[0163] Figure 6B Shows Figure 4A An example of the e-e' cross-section. The e-e' cross-section is the XZ plane passing through the resistance portion 62 and the connection portion 25. The e-e' cross-section crosses the resistance adjustment portion 60 in the X-axis direction and passes through the third contact portion 173.

[0164] The diode element portion 61 may be provided to cover the resistance portion 62. In this example, the width of the diode element portion 61 in the X-axis direction is larger than the width of the resistance portion 62 in the X-axis direction. The width of the diode element portion 61 in the Y-axis direction may be larger than the width of the resistance portion 62 in the Y-axis direction or may be smaller than the width of the resistance portion 62 in the Y-axis direction.

[0165] A first polysilicon layer 91 functioning as the connection portion 25 may be provided below the gate metal wiring 152. The first polysilicon layer 91 functioning as the connection portion 25 and the first polysilicon layer 91 functioning as the resistance portion 62 are separated by the interlayer insulating film 38.

[0166] Figure 7A An example of a manufacturing method of the semiconductor device 100 having the resistance adjustment portion 60 is shown. In step S100, the first insulating portion 81 is formed above the semiconductor substrate 10.

[0167] In step S102, a first polysilicon layer 91 for forming the resistor portion 62 is formed on the first insulating portion 81. The first polysilicon layer 91 may be patterned according to the shape of the resistor portion 62. The first polysilicon layer 91 may be formed simultaneously with the gate conductive portion 44 and the gate conductive portion 194. Before the step of forming the second insulating portion 82, a third opening 273 may be formed in the first polysilicon layer 91. The third opening 273 may be an opening for forming the first contact portion 171 and the third insulating portion 83. However, the formation of the third opening 273 may also be omitted.

[0168] In step S104, a second insulating portion 82 is formed on the first polysilicon layer 91. In the case where the third opening 273 is formed, the third insulating portion 83 may be formed within the third opening 273. The third insulating portion 83 may be formed using the same process as the second insulating portion 82. The material of the third insulating portion 83 may be the same as the material of the second insulating portion 82. When forming the second insulating portion 82, a contact hole 57 described later may be formed by patterning or etching or the like. A second polysilicon layer 92 for forming the diode element portion 61 is formed on the second insulating portion 82. The second polysilicon layer 92 may be formed using a process common to the temperature sensing diode of the temperature sensing portion 180. The PN structure of the diode element portion 61 may also be formed using a process common to the PN structure of the temperature sensing portion 180. The second polysilicon layer 92 may be formed into the interior of the contact hole 57.

[0169] Figure 7B An example of a manufacturing method of the semiconductor device 100 having the resistance adjustment portion 60 is shown. This figure shows Figure 7A subsequent processes of the manufacturing method of the semiconductor device 100.

[0170] In step S106, an interlayer insulating film 38 is formed above the diode element portion 61 and the resistor portion 62. After forming the interlayer insulating film 38, a first opening 271 for forming the first contact portion 171 may be formed through the interlayer insulating film 38, the second polysilicon layer 92, and the second insulating portion 82. After forming the interlayer insulating film 38, a second opening 272 for forming the second contact portion 172 may be formed through the interlayer insulating film 38, the second polysilicon layer 92, the second insulating portion 82, and the first polysilicon layer 91. In the case where the contact hole 57 is formed in step S104, the second opening 272 may not be formed.

[0171] The first opening 271 and the second opening 272 may be formed using the same etching process. The first opening 271 and the second opening 272 may reach the upper surface of the first insulating portion 81. The first opening 271 and the second opening 272 may also extend into the first insulating portion 81 and may not reach the upper surface of the first insulating portion 81.

[0172] The step of forming the first opening 271 may include a step of forming the first opening 271 through the third insulating portion 83. In the step of forming the first opening 271, in order to separate the first contact portion 171 filled in the first opening 271 from the resistance portion 62, the first opening 271 is formed in such a manner that the third insulating portion 83 is provided between the first opening 271 and the first polysilicon layer 91.

[0173] In step S108, the first contact portion 171 is formed in the first opening 271, and the second contact portion 172 is formed in the second opening 272. The first contact portion 171 and the second contact portion 172 may be formed by the same contact formation process. The step of forming the first contact portion 171 may include a step of forming the first contact portion 171 inside the third insulating portion 83. In the case where the second opening 272 is not formed in step S106, the second contact portion 172 may not be formed.

[0174] The manufacturing method of the semiconductor device 100 in this example can simplify the process by sharing at least a part of the process for forming the resistance adjustment portion 60 with the process for forming the transistor portion 70, the current sensing portion 90, or the temperature sensing portion 180. By sharing all the processes of the resistance adjustment portion 60, a new process for forming the resistance adjustment portion 60 can also be made unnecessary.

[0175] Figure 8 shown Figure 4A a modified example of the c-c' cross section in. Use Figure 8 to illustrate points different from Figure 5A that.

[0176] In Figure 8 example, the diode element portion 61 and the resistance portion 62 are in direct contact via the contact hole 57 provided in the second insulating portion 82. That is, in Figure 8 example, the second contact portion 172 and the second opening 272 are not provided. By directly contacting the diode element portion 61 and the resistance portion 62 and adjusting the size of the contact hole 57, the characteristics can be adjusted, and in addition, the resistance value of the resistance portion 62 can be adjusted.

[0177] Inside the contact hole 57, the height of the interface between the diode element portion 61 and the resistance portion 62 may be the same as the height of the lower surface of the second insulating portion 82. As an example, after forming the second insulating portion 82 on the first polysilicon layer 91, the second insulating portion 82 is selectively removed by etching or the like to form the contact hole 57. It should be noted that by performing over-etching when removing the second insulating portion 82, the height of the interface between the diode element portion 61 and the resistance portion 62 can be positioned at a position lower than the height of the lower surface of the second insulating portion 82.

[0178] Inside the contact hole 57, the height of the interface between the diode element portion 61 and the resistor portion 62 can be located at a position higher than the height of the lower surface of the second insulating portion 82. That is, the first polysilicon layer 91 can be provided to extend into the contact hole 57 in the depth direction of the semiconductor substrate 10. As an example, after selectively forming a mask on the first polysilicon layer 91 and etching the first polysilicon layer 91, the second insulating portion 82 is formed on the first polysilicon layer 91 and the mask is removed, thereby forming the contact hole 57.

[0179] Figure 9A Shows Figure 4A A modified example of the c-c' cross section in. The resistance adjustment portion 60 in this example is different from Figure 5A Examples such as shown in that a resistance adjustment trench portion 65 extending along a preset direction is provided in the semiconductor substrate 10. Using Figure 9A To Figure 5A The difference from an example of the c-c' cross section shown is described.

[0180] The first polysilicon layer 91 is provided inside the resistance adjustment trench portion 65. That is, in Figure 9A The example shown, instead of providing the first polysilicon layer 91 on the first insulating portion 81 formed above the front surface 21 of the semiconductor substrate 10, it is provided inside the resistance adjustment trench portion 65 extending in the depth direction from the front surface 21 of the semiconductor substrate 10. The first polysilicon layer 91 can function as the resistor portion 62.

[0181] The resistance adjustment trench portion 65 in this example has a resistance adjustment insulating film 64 and a first polysilicon layer 91. The resistance adjustment insulating film 64 can be formed by oxidizing or nitriding the semiconductor on the inner wall of the resistance adjustment trench. The first polysilicon layer 91 is formed at a position more inside than the resistance adjustment insulating film 64 inside the resistance adjustment trench portion 65. The resistance adjustment insulating film 64 insulates the first polysilicon layer 91 from the semiconductor substrate 10.

[0182] The second polysilicon layer 92 is provided on the first insulating portion 81, the second insulating portion 82, and the first polysilicon layer 91. The first insulating portion 81 and the second insulating portion 82 can be formed in the same process or in different processes. The second polysilicon layer 92 can function as the diode element portion 61. An interface 93 is formed between the first polysilicon layer 91 and the second polysilicon layer 92.

[0183] The second polysilicon layer 92 is provided in direct contact with the first polysilicon layer 91. That is, in Figure 9AIn the example, the second contact portion 172 and the second opening 272 are not provided. Thus, the diode element portion 61 and the resistor portion 62 can be in direct contact, and by adjusting the size of the contact interface 93, the resistance value of the resistance adjustment portion 60 can be adjusted. It should be noted that in Figure 9A In the example, the second contact portion 172 and the second opening 272 may also be provided.

[0184] Figure 9B shows Figure 4A A modified example of the c-c' cross-section in. Using Figure 9B , in Figure 9B In the example, the difference from the example shown in Figure 9A is that the first polysilicon layer 91 provided in the resistance adjustment trench portion 65 functions as a part of the resistor portion 62 and the diode element portion 61.

[0185] The diode element portion 61 has a cathode region 361 and an anode region 362. The cathode region 361 is a region of the first conductivity type. The cathode region 361 in this example is of the N type. The anode region 362 is a region of the second conductivity type. The anode region 362 in this example is of the P type. In the diode element portion 61, current flows from the anode region 362 in the direction toward the cathode region 361.

[0186] At least one of the cathode region 361 and the anode region 362 may be provided in the resistance adjustment trench portion 65. In this example, in the resistance adjustment trench portion 65 extending along a preset direction in the semiconductor substrate 10, the cathode region 361 is provided. The anode region 362 may be provided in the resistance adjustment trench portion 65.

[0187] Thus, the first polysilicon layer 91 can function not only as the resistor portion 62 but also as one of the cathode region 361 and the anode region 362 of the diode element portion 61. Thereby, by changing the size of the interface 93, the characteristics of the diode element portion 61 can be adjusted, and in addition, the resistance adjustment portion 60 can be miniaturized.

[0188] Figure 10 shows an example of a top view of the resistance adjustment portion 60. As an example, Figure 10 is Figure 9A The top view of the resistance adjustment portion 60 shown. Since the resistor portion 62 is provided below the diode element portion 61, it is not visible in a top view, but in Figure 10 , in order to understand the positional relationship, the portion provided below the diode element portion 61 is shown by a dashed line. The resistance adjustment portion 60 in this example has a resistance adjustment trench portion 65 extending along a preset direction in the semiconductor substrate 10. The resistor portion 60 is provided in the resistance adjustment trench portion 65 in this example.

[0189] The resistance adjustment trench portion 65 of this example extends along the Y-axis direction. That is, the resistance adjustment trench portion 65 of this example extends along the rectifying direction of the diode element portion 61, but is not limited thereto. The resistance adjustment trench portion 65 may extend along the X-axis direction.

[0190] A plurality of resistance adjustment trench portions 65 may be provided. The resistance adjustment portion 60 of this example has six resistance adjustment trench portions 65. The end portions of the resistance adjustment trench portions 65 of this example, similar to the gate trench portion 40, have a U shape on the front surface 21 of the semiconductor substrate 10. That is, the resistance adjustment trench portion 65 may have two extending portions extending along the extending direction and a connecting portion connecting the two extending portions.

[0191] The length of the resistance adjustment trench portion 65 in a preset direction may be shorter than the length of the gate trench portion 40 in the current sensing portion 90. The length of the resistance adjustment trench portion 65 may be 2 μm or more and 2000 μm or less. In addition, the length of the resistance adjustment trench portion 65 may also be 50 μm or more and 500 μm or less. By adjusting the length of the resistance adjustment trench portion 65, the resistance value of the resistance adjustment portion 60 can be adjusted.

[0192] The resistance adjustment trench portion 65 may be provided in a shape formed by connecting a plurality of U-shaped trenches. The resistance adjustment trench portion 65 may have n extending portions (n is a natural number of 2 or more) extending along the extending direction and n - 1 connecting portions connecting the two extending portions. By adopting such a shape, the resistance value of the resistance adjustment portion 60 can be easily adjusted.

[0193] The semiconductor device 100 of this example may have both a resistance adjustment portion 60 including the resistance adjustment trench portion 65 and a resistance adjustment portion 60 not including the resistance adjustment trench portion 65. That is, the main adjustment portion 160 may have the resistance adjustment trench portion 65, and the sensing adjustment portion 260 may not have the resistance adjustment trench portion 65. Or, the main adjustment portion 160 may not have the resistance adjustment trench portion 65, and the sensing adjustment portion 260 may have the resistance adjustment trench portion 65.

[0194] As described above, the present invention has been illustrated by the embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious that various changes or improvements can be made to the above embodiments for those skilled in the art. It can be clearly understood from the description of the claims that the embodiments with such changes or improvements can also be included in the technical scope of the present invention. For example, in the resistance adjustment portion 60, the resistance portion 62 may be arranged on the gate pad 150 side of the diode element portion 61.

[0195] It should be noted that the execution order of the devices shown in the claims, the description, and the drawings, as well as the actions, sequences, steps, stages, etc. in the method, can be implemented in any order as long as it is not specifically indicated as "before...", "prior to...", etc., and as long as the output of the previous process is not used in the subsequent process. Regarding the action flow in the claims, the description, and the drawings, even if it is described for convenience using "firstly," "next," etc., it does not mean that it must be implemented in that order.

Claims

1. A semiconductor device, characterized in that: have: Transistor Department; a current sensing section for detecting a current flowing in the transistor section; A gate pad is disposed above the semiconductor substrate; as well as a resistance adjusting unit, which is electrically connected to the gate pad and is used to adjust the gate resistance of the transistor unit and the current sensing unit, The resistance adjustment unit comprises: a main adjustment section electrically connected to the gate conductive section of the transistor section; and a sensing adjustment unit electrically connected to the gate conductive unit of the current sensing unit, Each of the main adjustment section and the sensing adjustment section includes a diode element section including a plurality of diodes arranged in anti-parallel, and a resistor section connected to the diode element section.

2. The semiconductor device according to claim 1, wherein: The resistor unit has a resistance value such that the transistor unit is turned on earlier than the current sensing unit and the transistor unit is turned off later than the current sensing unit.

3. The semiconductor device according to claim 1, wherein: The main adjustment unit has: a main conduction side diode, an anode of which is electrically connected to the gate pad, and a cathode of which is electrically connected to the gate conductive portion of the transistor portion; a main shutoff side diode, an anode of which is electrically connected to the gate conductive portion of the transistor portion, and a cathode of which is electrically connected to the gate pad; as well as A main turn-off side resistor is electrically connected between the anode of the main turn-off side diode and the gate conductive portion of the transistor portion.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that The sensing adjustment unit comprises: a sensing conduction side diode, the anode of which is electrically connected to the gate pad, and the cathode of which is electrically connected to the gate conductive portion of the current sensing portion; a sensing off-side diode, the anode of which is electrically connected to the gate conductive portion of the current sensing portion, and the cathode of which is electrically connected to the gate pad; and A sensing on-side resistor is electrically connected between the cathode of the sensing on-side diode and the gate conductive portion of the current sensing portion.

5. The semiconductor device according to claim 1, wherein: The main adjustment unit has: a main conduction side diode, an anode of which is electrically connected to the gate pad, and a cathode of which is electrically connected to the gate conductive portion of the transistor portion; a main shutoff side diode, an anode of which is electrically connected to the gate conductive portion of the transistor portion, and a cathode of which is electrically connected to the gate pad; a main conduction side resistor electrically connected between the cathode of the main conduction side diode and the gate conductive portion of the transistor portion; as well as A main turn-off side resistor is electrically connected between the anode of the main turn-off side diode and the gate conductive portion of the transistor portion.

6. The semiconductor device according to claim 5, wherein: The sensing adjustment unit comprises: a sensing conduction side diode, the anode of which is electrically connected to the gate pad, and the cathode of which is electrically connected to the gate conductive portion of the current sensing portion; a sensing off-side diode, the anode of which is electrically connected to the gate conductive portion of the current sensing portion, and the cathode of which is electrically connected to the gate pad; a sensing on-side resistor electrically connected between the cathode of the sensing on-side diode and the gate conductive portion of the current sensing portion; as well as A sensing off-side resistor is electrically connected between the anode of the sensing off-side diode and the gate conductive portion of the current sensing portion.

7. The semiconductor device according to any one of claims 1 to 3, characterized in that In the resistance adjustment section, the diode element section is provided above the resistance section.

8. The semiconductor device according to claim 7, wherein: have: A first insulating portion, disposed above the semiconductor substrate; a second insulating portion, disposed above the first insulating portion; an interlayer insulating film provided above the first insulating portion and the second insulating portion; as well as a front-side metal layer provided on the interlayer insulating film, The resistor portion is disposed on the first insulating portion, The diode element portion is provided above the resistor portion via the second insulating portion.

9. The semiconductor device according to claim 8, wherein: The semiconductor device includes a first contact portion, which is arranged to extend from the upper end of the interlayer insulating film through the diode element portion, the second insulating portion and the resistor portion to the upper end of the first insulating portion, and the first contact portion is used to connect the front side metal layer and the diode element portion.

10. The semiconductor device according to claim 9, wherein: The semiconductor device includes a third insulating portion provided around the first contact portion and electrically isolating the first contact portion from the resistor portion.

11. The semiconductor device according to claim 8, wherein: The semiconductor device includes a second contact portion, which is arranged to extend from the upper end of the interlayer insulating film through the diode element portion, the second insulating portion and the resistor portion to the upper end of the first insulating portion, and is used to connect the front side metal layer and the resistor portion.

12. The semiconductor device according to claim 1, wherein: The resistance adjustment portion includes a resistance adjustment groove portion extending in a predetermined direction in the semiconductor substrate. The resistor portion is provided in the resistance adjustment groove portion.

13. The semiconductor device according to claim 8, wherein: The diode element portion and the resistor portion are in direct contact with each other via a contact hole provided in the second insulating portion.

14. The semiconductor device according to claim 1, wherein: The resistance adjustment unit comprises: a resistance adjustment groove portion, which is provided in the semiconductor substrate so as to extend along a preset direction; a first polysilicon layer disposed inside the resistance adjustment groove portion; as well as A second polysilicon layer is disposed in direct contact with the first polysilicon layer.

15. The semiconductor device according to claim 1, wherein: The resistance adjustment portion includes a resistance adjustment groove portion extending in a predetermined direction in the semiconductor substrate. The diode element portion has a cathode region and an anode region, At least one of the cathode region and the anode region is provided in the resistance adjustment groove portion.

16. The semiconductor device according to any one of claims 1 to 3, characterized in that The resistor portion has a thickness thinner than that of the diode element portion.

17. A method for manufacturing a semiconductor device, comprising: have: The step of providing a gate pad above the semiconductor substrate; and a step of providing a resistance adjusting section electrically connected to the gate pad and used to adjust gate resistances of the transistor section and the current sensing section, The steps of setting the resistance adjustment unit include: forming a main adjustment portion electrically connected to the gate conductive portion of the transistor portion; and forming a sensing adjustment portion electrically connected to the gate conductive portion of the current sensing portion, Each of the main adjustment section and the sensing adjustment section includes a diode element section including a plurality of diodes arranged in anti-parallel, and a resistor section connected to the diode element section.

18. The method for manufacturing a semiconductor device according to claim 17, wherein: have: forming a first insulating portion above the semiconductor substrate; forming a first polysilicon layer for forming the resistor portion on the first insulating portion; forming a second insulating portion on the first polysilicon layer; forming a second polysilicon layer for forming the diode element portion on the second insulating portion; forming an interlayer insulating film above the diode element portion and the resistor portion; a step of forming a first opening for forming a first contact portion through the interlayer insulating film, the second polysilicon layer, and the second insulating portion; a step of forming a second opening for forming a second contact portion through the interlayer insulating film, the second polysilicon layer, the second insulating portion, and the first polysilicon layer; forming the first contact portion in the first opening; as well as The step of forming a second contact portion in the second opening.

19. The method for manufacturing a semiconductor device according to claim 18, wherein: The first opening and the second opening are formed by the same etching process. The first contact and the second contact are formed using the same contact forming process.

20. The method for manufacturing a semiconductor device according to claim 17, wherein: have: forming a first insulating portion above the semiconductor substrate; forming a first polysilicon layer for forming the resistor portion on the first insulating portion; forming a second insulating portion on the first polysilicon layer; forming a second polysilicon layer for forming the diode element portion on the second insulating portion; forming an interlayer insulating film above the diode element portion and the resistor portion; a step of forming a first opening for forming a first contact portion through the interlayer insulating film, the second polysilicon layer, and the second insulating portion; as well as The step of forming the first contact portion in the first opening.

21. The method for manufacturing a semiconductor device according to any one of claims 18 to 20, characterized in that: have: forming a third opening in the first polysilicon layer before forming the second insulating portion; and forming a third insulating portion in the third opening, The step of forming the first opening includes the step of penetrating the third insulating portion to form the first opening, The step of forming the first contact portion includes the step of forming the first contact portion inside the third insulating portion.

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