Tail gas treatment device and thin film deposition apparatus

Abstract

The application provides a tail gas treatment device and a thin film deposition equipment. The tail gas treatment device comprises a microwave assembly and a resonant cavity. The microwave assembly is used for conducting microwaves. One end of the resonant cavity is connected with the microwave assembly. The resonant cavity is provided with a resonant cavity, an air inlet channel and an air outlet channel. The resonant cavity is located in the resonant cavity body and communicates with the microwave assembly, the air inlet channel and the air outlet channel. The air inlet channel is provided with a first air inlet and a second air inlet. The tail gas enters the air inlet channel through the first air inlet. The auxiliary gas enters the air inlet channel through the second air inlet and flows to the resonant cavity together with the tail gas. The microwaves enter the resonant cavity through the microwave assembly and ionize the tail gas and the auxiliary gas. The ionized tail gas and auxiliary gas react to make at least part of the tail gas lose activity. The reacted tail gas and auxiliary gas flow out through the air outlet channel. The application designs the tail gas treatment device by using the principle of microwave resonance, improves the adaptability, efficiently processes the tail gas and protects the dry pump.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to an exhaust gas treatment device and a thin film deposition equipment. Background Technology

[0002] In semiconductor chemical vapor deposition (CVD) equipment, exhaust gases such as byproducts are generated during operation. These byproducts may include unreacted chemicals, solid particles generated during the reaction, and potentially sticky polymers. If these byproducts enter the dry pump, they may accumulate inside the pump, causing pump components to jam or be damaged, thereby affecting the stable operation of the equipment.

[0003] For some process applications where byproducts contain many particles and sticky substances, such as the downstream thick-film TEOS process, it is necessary to treat the exhaust gases, including byproducts, to ensure the safe and stable operation of the process dry pump and reduce the risk of jamming. Current main practices include increasing the purging of the dry pump itself, connecting NF3RPS or other gas RPS (remote plasma source) to the upstream pipeline downstream of the TV (valve or treatment unit), or connecting a local scrubber (RF-based solution) in series to the upstream pipeline downstream of the TV. However, both RPS and local scrubber exhaust gas treatment devices have requirements on gas composition and pressure, which limits the exhaust gas treatment capacity. Therefore, under some medium and high pressure process conditions, CVD equipment has poor adaptability to exhaust gas treatment devices. Summary of the Invention

[0004] Embodiments of the present invention provide an exhaust gas treatment device and a thin film deposition equipment to improve the adaptability of the exhaust gas treatment device, thereby effectively treating the exhaust gas and protecting the dry pump under different process conditions.

[0005] This invention provides an exhaust gas treatment device, comprising:

[0006] Microwave components, used to conduct microwaves;

[0007] A resonant cavity, one end of which is connected to the microwave component, the resonant cavity having a resonant cavity, an air inlet channel, and an air outlet channel, the resonant cavity being located inside the resonant cavity and communicating with the microwave component, the air inlet channel, and the air outlet channel;

[0008] The air intake channel is provided with a first air intake and a second air intake. The exhaust gas enters the air intake channel through the first air intake, and the auxiliary gas enters the air intake channel through the second air intake and mixes with the exhaust gas before flowing into the resonant cavity. Microwaves enter the resonant cavity through the microwave component and ionize the exhaust gas and the auxiliary gas. The ionized exhaust gas and the auxiliary gas react to deactivate at least part of the exhaust gas. The reacted exhaust gas and the auxiliary gas flow out through the air outlet channel.

[0009] In the exhaust gas treatment device provided by the present invention, the second air inlet is located below the first air inlet.

[0010] In the exhaust gas treatment device provided by the present invention, the exhaust gas treatment device further includes a nozzle, which is connected to the second air inlet to spray auxiliary gas into the air inlet channel.

[0011] In the exhaust gas treatment device provided by the present invention, the resonant cavity is further provided with an air inlet mesh, which is located between the air inlet channel and the resonant cavity, for rapidly and uniformly mixing exhaust gas and auxiliary gas.

[0012] In the exhaust gas treatment device provided by the present invention, the resonant cavity is further provided with an exhaust hole mesh, which is located between the exhaust channel and the resonant cavity and is used to block microwave transmission.

[0013] In the exhaust gas treatment device provided by the present invention, the resonant cavity is further provided with a water cooling system, which is located on the outer wall of the resonant cavity and is used to cool the resonant cavity.

[0014] In the exhaust gas treatment device provided by the present invention, the microwave component includes a waveguide and a coupler, the two ends of the coupler are respectively connected to the waveguide and the resonant cavity, and the coupler connects the waveguide and the resonant cavity.

[0015] In the exhaust gas treatment device provided by the present invention, the microwave component further includes a conversion antenna, one end of which is fixed in the waveguide, and the other end is located in the coupler and extends along the length of the coupler toward the resonant cavity.

[0016] In the exhaust gas treatment device provided by the present invention, the exhaust gas treatment device further includes a dielectric wave-transparent window, which is fixed in the resonant cavity and located at the connection between the resonant cavity and the microwave component.

[0017] The present invention also provides a thin film deposition apparatus, which includes the exhaust gas treatment device described in any of the above claims.

[0018] This application designs the exhaust gas treatment device using the principle of microwave resonance to treat byproducts and waste gases generated during semiconductor CVD equipment processes. After the exhaust gas and auxiliary gas enter the resonant cavity and are efficiently dissociated by microwaves, at least some of the generated free radicals and ions can rapidly undergo chemical reactions to lose their activity. Some unrecombined free radicals can continue to undergo chemical reactions outside the resonant cavity until all exhaust gases lose their activity. Because microwaves have a very high frequency, the exhaust gas treatment device has no specific requirements for the exhaust gas and auxiliary gas, and it has a wide operating pressure range, thereby improving the process adaptability of the device. This allows the device to efficiently treat exhaust gases under different process conditions, preventing exhaust gases from entering the dry pump, effectively protecting the dry pump, preventing abnormal shutdowns, and extending the dry pump's maintenance cycle. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a cross-sectional view of the exhaust gas treatment device in an embodiment of the present invention;

[0021] Figures 2a-2c These are structural diagrams of the exhaust gas treatment device from various angles in an embodiment of the present invention;

[0022] Figure 3 This is an exploded view of the exhaust gas treatment device in an embodiment of the present invention.

[0023] The labels for the attached figures are as follows:

[0024] 1. Microwave assembly; 11. Waveguide; 12. Coupler; 13. Converter antenna; 14. Short-circuit flange; 2. Resonant cavity; 21. Resonant cavity; 22. Air inlet channel; 221. First air inlet; 222. Second air inlet; 23. Air outlet channel; 24. Air inlet mesh; 25. Air outlet mesh; 3. Nozzle; 4. Dielectric transparent window. Detailed Implementation

[0025] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0026] Reference Figures 1 to 3The diagram illustrates an embodiment of the exhaust gas treatment device of the present invention. The exhaust gas treatment device includes a microwave component 1 and a resonant cavity 2. The microwave component 1 is used to conduct microwaves. One end of the resonant cavity 2 is connected to the microwave component 1. The resonant cavity 2 is provided with a resonant cavity 21, an air inlet channel 22, and an air outlet channel 23. The resonant cavity 21 is located inside the resonant cavity 2 and is connected to the microwave component 1, the air inlet channel 22, and the air outlet channel 23. The air inlet channel 22 is provided with a first air inlet 221 and a second air inlet 222. Exhaust gas enters the air inlet channel 22 through the first air inlet 221, and auxiliary gas enters the air inlet channel 22 through the second air inlet 222 and mixes with the exhaust gas before flowing into the resonant cavity 21. Microwaves enter the resonant cavity 21 from the microwave component 1 and ionize the exhaust gas and auxiliary gas. The ionized exhaust gas and auxiliary gas react to deactivate at least a portion of the exhaust gas. The reacted exhaust gas and auxiliary gas flow out through the air outlet channel 23.

[0027] Specifically, the exhaust gas treatment device is used in the semiconductor manufacturing field to treat the byproducts and waste gases generated during the operation of semiconductor CVD equipment, thereby ensuring that the dry pump will not be jammed or damaged, affecting the operation of the CVD equipment. The exhaust gas treatment device uses the principle of microwave resonance to ionize the exhaust gas, so that the exhaust gas treatment device has a wide operating pressure range, improving the adaptability of the exhaust gas treatment device, so that the exhaust gas device can efficiently treat the exhaust gas under process conditions with different pressure ranges.

[0028] The exhaust gas treatment device includes a microwave component 1 and a resonant cavity 2. The microwave component 1 is used to conduct microwaves into the resonant cavity 2. The resonant cavity 2 is used to treat the exhaust gas, that is, the exhaust gas is ionized by microwaves inside the resonant cavity 2. One end of the resonant cavity 2 is fixedly connected to one end of the microwave component 1, and the microwave component 1 is in communication with the resonant cavity 2, so that microwaves can be transmitted from the microwave component 1 into the resonant cavity 2.

[0029] The resonant cavity 2 includes a resonant cavity 21, an air inlet channel 22, and an air outlet channel 23. The resonant cavity 21 is used to contain microwaves and exhaust gas, so that the exhaust gas is ionized within the resonant cavity 21. The resonant cavity 21 is located inside the resonant cavity 2 and is connected to the microwave component 1, the air inlet channel 22, and the air outlet channel 23. The air inlet channel 22 and the air outlet channel 23 are located on opposite sides of the resonant cavity 21, with one end of the air inlet channel 22 connected to the resonant cavity 21 and the other end facing the resonant cavity. The resonant cavity 21 is an external extension of the resonant cavity 2, with the air intake channel 22 protruding from the outer surface of the resonant cavity 2. The air intake channel 22 connects the outside of the resonant cavity 2 and the resonant cavity 21. The air intake channel 22 is used to introduce exhaust gas and auxiliary gas. The exhaust gas refers to by-products and waste gas generated during the process. The auxiliary gas refers to an auxiliary gas selected according to the composition of the by-products and waste gas generated during the process. The auxiliary gas is used to chemically react with the ionized exhaust gas to deactivate it. The air intake channel 22 is provided with a first air inlet 221 and a second air inlet 221. The air inlet 222 has two ports: the first air inlet 221 is used to introduce exhaust gas into the air intake channel 22, and the second air inlet 222 is used to introduce auxiliary gas into the air intake channel 22. Therefore, the exhaust gas and auxiliary gas enter the air intake channel 22 from the first air inlet 221 and the second air inlet 222 respectively, mix together, and finally flow from the air intake channel 22 into the resonant cavity 21, where they undergo a chemical reaction after being ionized by microwaves. One end of the air outlet channel 23 is connected to the resonant cavity 21, and the other end faces the outside of the resonant cavity 2. The extended configuration includes an exhaust channel 23 connecting the outside of the resonant cavity 2 and the resonant cavity 21. The exhaust channel 23 is used to discharge the gas and substances inside the resonant cavity 21. Therefore, microwaves can enter the resonant cavity 21 from the microwave component 1. The exhaust gas and auxiliary gas enter the resonant cavity 21 after entering the intake channel 22 from the first intake port 221 and the second intake port 222, respectively. After the ionized exhaust gas and auxiliary gas react, as well as the unreacted gas, they can be discharged from the resonant cavity 21 through the exhaust channel 23.

[0030] When the exhaust gas treatment device is activated, the exhaust gas and auxiliary gas enter the intake channel 22 from the first intake port 221 and the second intake port 222 respectively, and mix and flow into the resonant cavity 21. Microwaves are transmitted to the resonant cavity 21 by the microwave component 1. Simultaneously, the microwaves ionize the exhaust gas and auxiliary gas located in the resonant cavity 21. After ionization, the auxiliary gas and exhaust gas form various free radicals and ions. There are two scenarios for the free radicals and ions in the resonant cavity 21: one is that all free radicals and ions react within the resonant cavity 21 and lose their activity; the other is that some free radicals and ions can rapidly undergo chemical reactions within the resonant cavity 21 and lose their activity, while some free radicals that do not undergo chemical reactions... There are two ways to treat the unreacted free radicals and ions in the resonant cavity 21. The first way is that the unreacted free radicals and ions can be extracted from the resonant cavity 21 through the gas outlet channel 23 and then chemically reacted in the external exhaust system until they lose their activity and are then extracted from the system. The second way is to introduce new auxiliary gas into the resonant cavity 21 to chemically react with some of the unreacted free radicals, thereby deactivating the exhaust gas and ensuring the treatment of the exhaust gas. Finally, the ionized exhaust gas and auxiliary gas in the resonant cavity 21 are extracted from the resonant cavity 21 through the gas outlet channel 23. The gas extracted from the resonant cavity 21 through the gas outlet channel 23 includes both reacted gas and unreacted gas, thereby achieving the treatment of at least a portion of the exhaust gas.

[0031] This application designs the exhaust gas treatment device using the principle of microwave resonance to treat byproducts and waste gases generated during semiconductor CVD equipment processes. After the exhaust gas and auxiliary gas enter the resonant cavity 21 and are efficiently dissociated by microwaves, at least some of the generated free radicals and ions can rapidly undergo chemical reactions to lose their activity. Some unrecombined free radicals can continue to undergo chemical reactions outside the resonant cavity 21 until all exhaust gases lose their activity. Because microwaves have a very high frequency, the exhaust gas treatment device has no specific requirements for the exhaust gas and auxiliary gas, and it has a wide operating pressure range, thereby improving the process adaptability of the exhaust gas treatment device. This allows the device to efficiently treat exhaust gases under different process conditions, preventing exhaust gases from entering the dry pump, effectively protecting the dry pump, preventing abnormal shutdowns, and extending the dry pump's maintenance cycle.

[0032] Meanwhile, the exhaust gas treatment device is designed using the principle of microwave resonance, which is not sensitive to gases and has good dissociation capabilities for most gases. Furthermore, the resonant cavity 2 and the microwave source are completely separated. In this embodiment, a solid-state microwave source is used, which has very high stability and reliability and can be maintenance-free for almost the entire system's lifespan. The resonant cavity 21 itself is a passive module and a purely mechanical component, which can be used periodically as a consumable, thereby significantly reducing the product's maintenance cycle.

[0033] More specifically, the present invention uses the principle of microwave resonance to design the exhaust gas treatment device, and uses microwaves in the ISM (Industrial / Scientific / Medical) band (such as 915MHz / 2450MHz) as the energy source as specified by ITU-R (International Telecommunication Union Radiocommunication Bureau), while selecting a broadband solid-state microwave source, so as to utilize the resonance of microwaves in the resonant cavity 21 to dissociate the exhaust gas and auxiliary gas.

[0034] In one embodiment, reference is made to Figure 1 and Figure 3 As shown, the second air inlet 222 is located below the first air inlet 221. Specifically, the air intake channel 22 is used to deliver exhaust gas and auxiliary gas into the resonant cavity 21. The air intake channel 22 protrudes from the outer surface of the resonant cavity 2. The air intake channel 22 is provided with a first air inlet 221 and a second air inlet 222. The first air inlet 221 is used to introduce exhaust gas into the air intake channel 22, and the second air inlet 222 is used to introduce auxiliary gas into the air intake channel 22. The second air inlet 222 is located below the first air inlet 221.

[0035] When the semiconductor CVD equipment is started, the by-products and exhaust gases generated by the equipment flow into the intake channel 22 through the first air inlet 221. At the same time, auxiliary gas is introduced into the intake channel 22 through the second air inlet 222. The exhaust gas and auxiliary gas mix in the intake channel 22 and flow into the resonant cavity 21, where they are ionized by microwaves.

[0036] In this embodiment, by placing the second air inlet 222 below the first air inlet 221, the exhaust gas and auxiliary gas can be fully mixed.

[0037] In a specific embodiment, refer to Figure 1 , Figure 2a , Figure 2b and Figure 3As shown, the exhaust gas treatment device further includes a nozzle 3, which is fixedly connected to the second air inlet 222. The nozzle 3 is used to inject auxiliary gas into the air intake channel 22. Specifically, the exhaust gas treatment device further includes a nozzle 3, which is fixedly connected to the second air inlet 222, and the nozzle 3 is used to inject auxiliary gas into the air intake channel 22, thereby ensuring that the auxiliary gas flows symmetrically and uniformly into the air intake channel 22 along the axis of the air intake channel 22, and thus ensuring uniform mixing of the auxiliary gas and the exhaust gas.

[0038] In one embodiment, reference is made to Figure 1 , Figure 2b As shown, the resonant cavity 2 is also provided with an air inlet mesh 24, which is located between the air inlet channel 22 and the resonant cavity 21, and is used to quickly and uniformly mix the exhaust gas and the auxiliary gas. Specifically, the resonant cavity 2 is further provided with an air inlet mesh 24, which is used to rapidly promote the uniform mixing of exhaust gas and auxiliary gas. The air inlet mesh 24 is located between the air intake channel 22 and the resonant cavity 21, that is, the air inlet mesh 24 is located at the connection between the air intake channel 22 and the resonant cavity 21. The air intake channel 22 and the resonant cavity 21 are located on both sides of the air inlet mesh 24. Therefore, the exhaust gas and auxiliary gas entering the air intake channel 22 through the first air inlet 221 and the second air inlet 222 are initially mixed in the air intake channel 22. That is, the exhaust gas and auxiliary gas are mixed on the side of the air inlet mesh 24 located in the air intake channel 22, and after passing through the air inlet mesh 24, they enter the resonant cavity 21 and are ionized by microwaves in the resonant cavity 21. Among them, the exhaust gas and auxiliary gas are further uniformly mixed when passing through the air inlet mesh 24, thereby improving the reaction rate of the ionized exhaust gas and auxiliary gas.

[0039] Furthermore, the air intake mesh 24 includes multiple air intake holes with a diameter of less than 2 mm to quickly promote the uniform mixing of exhaust gas and auxiliary gas.

[0040] In a specific embodiment, refer to Figure 1 , Figure 2cAs shown, the resonant cavity 2 is also provided with an exhaust vent mesh 25, which is located between the exhaust channel 23 and the resonant cavity 21, and is used to block microwave transmission. Specifically, the resonant cavity 2 is also provided with an exhaust vent mesh 25, which is used to block microwave transmission above a specific frequency. The exhaust vent mesh 25 is located between the exhaust channel 23 and the resonant cavity 21, that is, the exhaust vent mesh 25 is located at the connection between the intake channel 22 and the resonant cavity 21, and the exhaust channel 23 and the resonant cavity 21 are located on both sides of the exhaust vent mesh 25. The ionized exhaust gas and auxiliary gas form various free radicals and ions. Some of these free radicals and ions can rapidly undergo chemical reactions within the resonant cavity 21, thereby losing their activity. Unreacted free radicals and ions are extracted from the exhaust gas treatment device and further processed in the exhaust system. Therefore, the ionized exhaust gas and auxiliary gas within the resonant cavity 21 pass through the exhaust mesh 25 into the exhaust channel 23 and are ultimately extracted from the resonant cavity 21. To prevent microwaves from entering the exhaust channel 23 from the resonant cavity 21, the exhaust mesh 25 is provided between the exhaust channel 23 and the resonant cavity 21. The exhaust mesh 25 can block microwave transmission above a specific frequency to ensure microwaves enter the exhaust channel 23, thereby ensuring the structural stability of the ionized exhaust gas and auxiliary gas and preventing interference with subsequent operations; simultaneously, it improves the structural stability of the exhaust gas treatment device.

[0041] More specifically, the vent mesh 25 includes multiple vent holes. The aperture size of the vent holes needs to be large enough to block microwave transmission above a certain frequency, while also being as large as possible to prevent rapid recombination of free radicals in the gas. In this embodiment, the aperture size of the vent holes is less than 1 / 10 of half the wavelength of the microwave, to ensure that a sufficiently large metal area of ​​the vent mesh 25 participates in reflecting the microwave.

[0042] In one embodiment, the resonant cavity 2 is further provided with a water cooling system (not shown in the figure). The water cooling system is located on the outer wall of the resonant cavity 2 and is used to cool the resonant cavity 2. Specifically, the resonant cavity 2 is further provided with a water cooling system, which is used to release the heat conducted from the high-temperature gas inside the resonant cavity 21 to the surface of the resonant cavity 2, that is, to cool the resonant cavity 2.

[0043] More specifically, the water cooling system completes heat exchange through circulation, or water pipes are installed on the outer wall of the resonant cavity 2, and the resonant cavity 2 and the water cooling system are bonded together by welding or bonding to form a heat exchange structure.

[0044] In another embodiment, the inner surface of the resonant cavity 2 can be a specific metal surface structure or a specific metal coating structure. Specifically, since the metal surface is opaque to microwaves and can reflect microwaves, thereby causing microwaves to resonate within the resonant cavity 21, the inner surface of the resonant cavity 2 needs to be set as a specific metal surface structure; while the main purpose of the coating is to prevent the generation of contaminants, and the coating material needs to be selected according to different working gases.

[0045] More specifically, aluminum is generally chosen to make the resonant cavity 2; the coating material is entirely related to the composition of the working gas and needs to be handled on a case-by-case basis according to specific requirements.

[0046] In one embodiment, reference is made to Figures 1 to 3 As shown, the microwave component 1 includes a waveguide 11 and a coupler 12. The two ends of the coupler 12 are connected to the waveguide 11 and the resonant cavity 21, respectively, and the coupler 12 connects the waveguide 11 and the resonant cavity 21. Specifically, the microwave component 1 is used to transmit microwaves into the resonant cavity 21. The waveguide 11 is one of the basic forms of microwave transmission lines. Different microwave frequency ranges are represented by waveguides 11 of different sizes. The transmission method of the waveguide 11 is more flexible than that of a coaxial transmission line, which is beneficial for transmitting greater power. The coupler 12 is a transmission space for microwaves. One end of the coupler 12 is connected to the waveguide 11, and the other end is connected to the resonant cavity 2, thereby connecting the waveguide 11 and the resonant cavity 21. When the exhaust gas treatment device is activated, microwaves enter the coupler 12 through the waveguide 11 and propagate along the coupler 12 towards the resonant cavity 21, thereby ionizing the exhaust gas and auxiliary gas within the resonant cavity 21. In this embodiment, the waveguide 11, the coupler 12, and the resonant cavity 2 have stable structures.

[0047] More specifically, in this embodiment, the waveguide 11 is a rectangular waveguide 11, and its fundamental mode TE10 is the simplest fundamental mode. Meanwhile, one end of the coupler 12 is perpendicularly connected to the end of the waveguide 11, and the resonant cavity 2 is fixed along the length of the coupler 12 at the other end of the coupler 12, so that microwaves can be directly transmitted into the resonant cavity 21, thereby improving microwave transmission efficiency.

[0048] In a specific embodiment, refer to Figure 1 , Figure 2c and Figure 3As shown, the microwave component 1 also includes a switching antenna 13, one end of which is fixed in the waveguide 11, and the other end is located in the coupler 12 and extends along the length of the coupler 12 toward the resonant cavity 21. Specifically, the microwave component 1 further includes a conversion antenna 13, which is used to conduct microwaves in the waveguide 11 to the resonant cavity 21. The conversion antenna 13 is located in the coupler 12 and extends along the length of the coupler 12. One end of the conversion antenna 13 protrudes from one end of the coupler 12 and extends along the width of the waveguide 11 to be fixedly connected to the inner wall of the waveguide 11. The other end of the conversion antenna 13 extends along the length of the coupler 12 toward the position of the resonant cavity 21, that is, the other end of the conversion antenna 13 is close to the resonant cavity 21, so that the coupler 12 and the conversion antenna 13 together form a coaxial transmission structure. Based on the principle of electromagnetic induction, the conversion antenna introduces the microwaves transmitted in the waveguide 11 into the resonant cavity 21 to ensure the transmission direction of the microwaves.

[0049] More specifically, the conversion antenna 13 is provided with a cooling section to avoid overheating. In this embodiment, the cooling section is generally water-cooled, and the cooling water is circulated to complete the heat exchange by setting water channels inside the structure of the conversion antenna 13.

[0050] In another embodiment, reference is made to Figure 1 , Figure 2a , Figure 2b and Figure 3 As shown, the microwave assembly 1 further includes a short-circuit flange 14, which is located at the end of the waveguide 11 near the coupler 12 and is tunably connected to the waveguide 11. Specifically, the short-circuit flange 14 is used to adjust the reflected power of the waveguide 11. The short-circuit flange 14 is located near the coupler 12 and inside the waveguide 11. The short-circuit flange 14 is tunably connected to the waveguide 11, meaning that the position of the short-circuit flange 14 relative to the waveguide 11 can be adjusted back and forth and can form a good electrical connection with the inner metal surface of the waveguide 11 to ensure that no microwave leakage occurs.

[0051] In a specific embodiment, refer to Figure 1 and Figure 3As shown, the exhaust gas treatment device further includes a dielectric wave-transparent window 4, which is fixed inside the resonant cavity 2 and located at the connection between the resonant cavity 21 and the microwave component 1. Specifically, the exhaust gas treatment device further includes a dielectric wave-transparent window 4, which is fixed inside the resonant cavity 2 and located between the resonant cavity 21 and the microwave component 1. The dielectric wave-transparent window 4 is used to efficiently feed microwaves into the resonant cavity 21 while maintaining the physical isolation and sealing of the resonant cavity 21 and the microwave component 1, thereby improving the structural stability of the resonant cavity 2 and the microwave component 1.

[0052] Meanwhile, the resonant cavity 21 and the microwave component 1 are located on opposite sides of the dielectric transparent window 4. One side of the dielectric transparent window 4 is the microwave component 1 in the atmospheric environment, which mainly feeds microwave energy into the resonant cavity 21 efficiently. The other side of the dielectric transparent window 4 is the resonant space of the resonant cavity 21. The exhaust gas and auxiliary gas are mixed in the intake channel 22 and then input into the resonant cavity 21. After being ionized by the high-frequency strong electric field, they are discharged through the exhaust channel 23. Therefore, the conversion antenna 13 is located entirely on the atmospheric side of the dielectric transparent window 4, thereby avoiding high voltage etching of the conversion antenna 13.

[0053] This embodiment also provides a thin film deposition apparatus (not shown in the figure), which includes an exhaust gas treatment device. The exhaust gas treatment device can be any kind of exhaust gas treatment device provided by this invention. Since the specific structure and working principle of the exhaust gas treatment device have been described in detail in the previous specification, they will not be repeated here for the sake of brevity.

[0054] The thin film deposition equipment in this embodiment adopts the exhaust gas treatment device provided by the present invention. The exhaust gas treatment device has high adaptability, can effectively protect the dry pump, ensure the normal operation of the dry pump, thereby ensuring the normal operation of the thin film deposition equipment, improving the service life of the thin film deposition equipment, and reducing the maintenance cycle and maintenance cost.

[0055] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A tail gas treatment device, characterized in that, include: Microwave components, used to conduct microwaves; A resonant cavity, one end of which is connected to the microwave component, the resonant cavity having a resonant cavity, an air inlet channel, and an air outlet channel, the resonant cavity being located inside the resonant cavity and communicating with the microwave component, the air inlet channel, and the air outlet channel; The air intake channel is provided with a first air intake and a second air intake, with the second air intake located below the first air intake. Exhaust gas enters the air intake channel through the first air intake, and auxiliary gas enters the air intake channel through the second air intake and mixes with the exhaust gas before flowing into the resonant cavity. Microwaves enter the resonant cavity through the microwave component and ionize the exhaust gas and auxiliary gas. The ionized exhaust gas and auxiliary gas react to deactivate at least part of the exhaust gas, and the reacted exhaust gas and auxiliary gas flow out through the air outlet channel. The exhaust gas treatment device further includes a nozzle, which is connected to the second air inlet to spray auxiliary gas into the air intake channel; The resonant cavity is further provided with an air inlet mesh, which is located between the air inlet channel and the resonant cavity. It is used to quickly and uniformly mix the exhaust gas and the auxiliary gas. The air inlet mesh includes multiple air inlets, and the diameter of the air inlets is less than 2 mm. The resonant cavity is further provided with an exhaust hole mesh, which is located between the exhaust channel and the resonant cavity to block microwave transmission. The exhaust hole mesh includes multiple exhaust holes, and the diameter of the exhaust holes is less than 1 / 10 of half the wavelength of the microwave.

2. The exhaust gas treatment device according to claim 1, characterized in that, The resonant cavity is also equipped with a water cooling system, which is located on the outer wall of the resonant cavity and is used to cool the resonant cavity.

3. The exhaust gas treatment device according to claim 1, characterized in that, The microwave component includes a waveguide and a coupler, with the two ends of the coupler connected to the waveguide and the resonant cavity, respectively, and the coupler connecting the waveguide and the resonant cavity.

4. The exhaust gas treatment device according to claim 3, characterized in that, The microwave assembly also includes a switching antenna, one end of which is fixed in the waveguide and the other end is located in the coupler and extends along the length of the coupler toward the resonant cavity.

5. The exhaust gas treatment device according to claim 1, characterized in that, The exhaust gas treatment device also includes a dielectric wave-transparent window, which is fixed in the resonant cavity and located at the connection between the resonant cavity and the microwave component.

6. A thin film deposition apparatus, characterized in that, Includes the exhaust gas treatment device according to any one of claims 1-5.

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