Etching rate regulation and control method and system for laser double-sided etching of quartz crystal

Abstract

The invention relates to the technical field of laser double-sided etching, and discloses an etching rate regulation and control method and system for laser double-sided etching of a quartz crystal, and the system comprises a rate determination unit which is configured to determine the initial etching rate of laser double-sided etching based on an analysis result; the judgment unit is configured to collect real-time etching image data of the quartz crystal to be etched and judge whether the initial etching rate is adjusted or not according to the real-time etching image data; the rate adjustment unit is configured to determine an adjustment coefficient of the initial etching rate based on the angle data and the environment data and obtain a final etching rate; and the execution unit is configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate. According to the invention, the processing precision and efficiency of the quartz crystal are improved by accurately regulating and controlling the rate of laser double-sided etching.

Description

Technical Field

[0001] The present invention relates to the technical field of laser double-sided etching, and more specifically, to an etching rate regulation method and system for laser double-sided etching of quartz crystals. Background Art

[0002] With the continuous development of technology, laser etching technology has been widely used in the processing of quartz crystals. Due to its unique physical and chemical properties, quartz crystals play an important role in the fields of electronics, communication, optics, etc. However, traditional laser etching methods often have difficulty in precisely regulating the etching rate, resulting in unsatisfactory etching effects and affecting the performance and application range of quartz crystals.

[0003] Therefore, it is necessary to design an etching rate regulation method and system for laser double-sided etching of quartz crystals to solve the problems existing in the current technology. Summary of the Invention

[0004] In view of this, the present invention proposes an etching rate regulation method and system for laser double-sided etching of quartz crystals, aiming to achieve precise regulation of the laser double-sided etching rate of quartz crystals.

[0005] On the one hand, the present invention proposes an etching rate regulation system for laser double-sided etching of quartz crystals, including: A rate determination unit, configured to collect quartz crystal characteristic data of the quartz crystal to be etched and target data of the laser double-sided etching, and analyze the quartz crystal characteristic data and the target data, and determine the initial etching rate of the laser double-sided etching based on the analysis result; A judgment unit, configured to perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate according to the real-time etching image data; A rate adjustment unit, configured to collect angle data and environment data of the laser double-sided etching when it is determined to adjust the initial etching rate, determine an adjustment coefficient of the initial etching rate based on the angle data and the environment data, and obtain the final etching rate; An execution unit, configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0006] Further, when the rate determination unit analyzes the quartz crystal characteristic data and the target data and determines the initial etching rate of the laser double-sided etching based on the analysis result, it includes: The quartz crystal characteristic data includes the crystal plane index, surface roughness, and crystal absorption rate of the quartz crystal to be etched; The target data includes etching depth and etching accuracy; Determine the basic etching rate of laser double-sided etching according to the crystal plane index and surface roughness; Judge whether to correct the basic etching rate according to the crystal absorptivity; When it is determined to correct the basic etching rate, construct an initial vector group according to the crystal absorptivity, etching depth and etching accuracy, determine the correction coefficient of the basic etching rate according to the initial vector group, and obtain the initial etching rate.

[0007] Further, when the rate determination unit determines the basic etching rate of laser double-sided etching according to the crystal plane index and surface roughness, it includes: Compare the crystal plane index with the crystal plane index threshold, compare the surface roughness with the surface roughness threshold, and determine the basic etching rate of laser double-sided etching according to the comparison result; When the crystal plane index is greater than or equal to the crystal plane index threshold and the surface roughness is greater than or equal to the surface roughness threshold, determine the basic etching rate as the first etching rate; When the crystal plane index is greater than or equal to the crystal plane index threshold and the surface roughness is less than the surface roughness threshold, determine the basic etching rate as the second etching rate; When the crystal plane index is less than the crystal plane index threshold and the surface roughness is greater than or equal to the surface roughness threshold, determine the basic etching rate as the third etching rate; When the crystal plane index is less than the crystal plane index threshold and the surface roughness is less than the surface roughness threshold, determine the basic etching rate as the fourth etching rate.

[0008] Further, when the rate determination unit judges whether to correct the basic etching rate according to the crystal absorptivity, it includes: Compare the crystal absorptivity with the crystal absorptivity threshold, and judge whether to correct the basic etching rate according to the comparison result; When the crystal absorptivity is greater than or equal to the crystal absorptivity threshold, it is determined to correct the basic etching rate; When the crystal absorptivity is less than the crystal absorptivity threshold, it is determined not to correct the basic etching rate, and the basic etching rate is used as the initial etching rate.

[0009] Further, when the rate determination unit determines the correction coefficient of the basic etching rate according to the initial vector group and obtains the initial etching rate, it includes: Compare the initial vector group with the historical correction group, and determine the correction coefficient of the basic etching rate according to the comparison result; When there is a historical vector group in the historical correction group that is the same as the initial vector group, use the historical correction coefficient corresponding to the historical vector group as the correction coefficient, and use the product value of the historical correction coefficient and the basic etching rate as the initial etching rate; When there is no historical vector group in the historical correction group that is the same as the initial vector group, calculate the connection strength between the current initial vector group and each historical vector group, and extract the maximum connection strength; determine the correction coefficient of the basic etching rate according to the maximum connection strength, and use the product value of the correction coefficient and the basic etching rate as the initial etching rate.

[0010] Further, when the rate determination unit determines the correction coefficient of the basic etching rate according to the maximum connection strength, it includes: When the historical vector group corresponding to the maximum connection strength is unique, use the historical correction coefficient corresponding to the historical vector group corresponding to the maximum connection strength as the correction coefficient; When the historical vector group corresponding to the maximum connection strength is not unique, calculate the average correction coefficient according to the multiple historical vector groups corresponding to the maximum connection strength, and use the average correction coefficient as the correction coefficient.

[0011] Further, when the judgment unit determines whether to adjust the initial etching rate according to the real-time etching image data, it includes: Extract features from the real-time etching image data to obtain etching image feature values; Obtain the standard value of the etching image corresponding to the etching image feature value, and calculate the ratio of the etching image feature value to the standard value of the etching image, denoted as the etching ratio; Compare the etching ratio with the etching ratio threshold, and judge whether to adjust the initial etching rate according to the comparison result; When the etching ratio is greater than or equal to the etching ratio threshold, it is determined not to adjust the initial etching rate; When the etching ratio is less than the etching ratio threshold, it is determined to adjust the initial etching rate.

[0012] Further, when the rate adjustment unit determines the adjustment coefficient of the initial etching rate based on the angle data and the environmental data and obtains the final etching rate, it includes: Analyze the angle data to obtain the laser incident angle and the laser reflection angle; Analyze the environmental data to obtain the environmental temperature and the environmental humidity; Calculate the angle deviation value based on the laser incident angle and the laser reflection angle, and calculate the environmental deviation value based on the ambient temperature and the ambient humidity; Calculate the comprehensive deviation value based on the angle deviation value and the environmental deviation value; Determine the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, and take the product value of the adjustment coefficient and the initial etching rate as the final etching rate.

[0013] Further, when the rate adjustment unit determines the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, it includes: Compare the comprehensive deviation value with a first comprehensive deviation value and a second comprehensive deviation value, and determine the adjustment coefficient of the initial etching rate according to the comparison result; wherein, the first comprehensive deviation value is less than the second comprehensive deviation value; When the comprehensive deviation value is less than or equal to the first comprehensive deviation value, determine that the adjustment coefficient is the first adjustment coefficient; When the comprehensive deviation value is greater than the first comprehensive deviation value and less than the second comprehensive deviation value, determine that the adjustment coefficient is the second adjustment coefficient; When the comprehensive deviation value is greater than or equal to the second comprehensive deviation value, determine that the adjustment coefficient is the third adjustment coefficient.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: The etching rate control system for laser double-sided etching of quartz crystals provided by the present invention improves the processing accuracy and efficiency of quartz crystals by precisely controlling the rate of laser double-sided etching. Specifically, the system can intelligently determine the initial etching rate according to different quartz crystal characteristic data and the target data of laser double-sided etching, and in the etching process, real-time etching image data is collected for monitoring and adjustment. When it is found that the actual etching effect does not match the expectation, the system can automatically collect angle data and environmental data to correct the initial etching rate to obtain the final accurate etching rate. This intelligent control method not only improves the etching accuracy and consistency, but also greatly shortens the processing cycle and reduces the production cost.

[0015] On the other hand, the present invention also proposes an etching rate control method for laser double-sided etching of quartz crystals, including the following steps: S100: Collect the quartz crystal characteristic data and the target data of laser double-sided etching of the quartz crystal to be etched, and analyze the quartz crystal characteristic data and the target data, and determine the initial etching rate of laser double-sided etching based on the analysis result; S200: Perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate according to the real-time etching image data; S300: When it is determined to adjust the initial etching rate, collect the angle data and environmental data of the laser double-sided etching, determine the adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtain the final etching rate; S400: Perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0016] It can be understood that the above etching rate control method and system for laser double-sided etching of quartz crystals have the same beneficial effects, which will not be elaborated here. Description of the Drawings

[0017] By reading the detailed description of the preferred embodiments below, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present invention. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings: Figure 1 It is a structural block diagram of an etching rate control system for laser double-sided etching of quartz crystals provided by an embodiment of the present invention; Figure 2 It is a flowchart of an etching rate control method for laser double-sided etching of quartz crystals provided by an embodiment of the present invention. Detailed Embodiments

[0018] Hereinafter, exemplary embodiments of the present disclosure will be described in more detail with reference to the drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art. It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other. Hereinafter, the present invention will be described in detail with reference to the drawings and in conjunction with the embodiments.

[0019] Refer to Figure 1 As shown, in some embodiments of the present application, the present embodiment provides an etching rate control system for laser double-sided etching of quartz crystals, including: A rate determination unit, configured to collect quartz crystal characteristic data of a quartz crystal to be etched and target data of laser double-sided etching, analyze the quartz crystal characteristic data and the target data, and determine an initial etching rate of the laser double-sided etching based on the analysis result; A judgment unit, configured to perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate according to the real-time etching image data; A rate adjustment unit, configured to, when it is determined to adjust the initial etching rate, collect angle data and environment data of the laser double-sided etching, determine an adjustment coefficient of the initial etching rate based on the angle data and the environment data, and obtain a final etching rate; An execution unit, configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0020] It can be understood that the etching rate control system for laser double-sided etching of quartz crystals provided in this embodiment improves the processing accuracy and efficiency of quartz crystals by precisely controlling the etching rate of laser double-sided etching. Specifically, the system can intelligently determine the initial etching rate according to different quartz crystal characteristic data and target data of laser double-sided etching, and collect real-time etching image data for monitoring and adjustment during the etching process. When it is found that the actual etching effect does not match the expectation, the system can automatically collect angle data and environment data to correct the initial etching rate to obtain the final accurate etching rate. This intelligent control method not only improves the etching accuracy and consistency, but also greatly shortens the processing cycle and reduces the production cost.

[0021] Specifically, when the rate determination unit analyzes the quartz crystal characteristic data and the target data and determines the initial etching rate of the laser double-sided etching based on the analysis result, it includes: The quartz crystal characteristic data includes the crystal plane index, surface roughness, and crystal absorption rate of the quartz crystal to be etched; The target data includes the etching depth and etching accuracy; Determine the basic etching rate of the laser double-sided etching according to the crystal plane index and the surface roughness; Judge whether to correct the basic etching rate according to the crystal absorption rate; When it is determined to correct the basic etching rate, construct an initial vector group according to the crystal absorption rate, etching depth, and etching accuracy, determine a correction coefficient of the basic etching rate according to the initial vector group, and obtain the initial etching rate.

[0022] It is understandable that by comprehensively considering the crystal plane index, surface roughness, and crystal absorption rate of the quartz crystal, as well as the target etching depth and etching accuracy, this system can more accurately determine the initial etching rate. The crystal plane index and surface roughness, as the basic properties of the quartz crystal, directly affect the interaction between the laser and the quartz crystal, thus determining the basic etching rate. The crystal absorption rate reflects the absorption ability of the quartz crystal to laser energy and is a key factor in adjusting the etching rate. When the crystal absorption rate is abnormal, the system can intelligently correct the basic etching rate according to this parameter to ensure the stability and accuracy of the etching process.

[0023] Specifically, when the rate determination unit determines the basic etching rate of laser double-sided etching according to the crystal plane index and surface roughness, it includes: Comparing the crystal plane index with the crystal plane index threshold, comparing the surface roughness with the surface roughness threshold, and determining the basic etching rate of laser double-sided etching according to the comparison results; When the crystal plane index is greater than or equal to the crystal plane index threshold and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate as the first etching rate; When the crystal plane index is greater than or equal to the crystal plane index threshold and the surface roughness is less than the surface roughness threshold, determining the basic etching rate as the second etching rate; When the crystal plane index is less than the crystal plane index threshold and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate as the third etching rate; When the crystal plane index is less than the crystal plane index threshold and the surface roughness is less than the surface roughness threshold, determining the basic etching rate as the fourth etching rate.

[0024] It is understandable that the crystal plane index threshold and the surface roughness threshold are standard values preset according to experimental data and the physical properties of the quartz crystal, and are used to distinguish the influence degrees of different crystal plane indexes and surface roughnesses on the laser etching rate. By comparing these characteristic values with the preset thresholds, the system can intelligently select the most suitable basic etching rate to meet the etching requirements of different quartz crystals. This classification method based on characteristic thresholds not only simplifies the process of determining the etching rate, but also improves the accuracy and adaptability of the etching rate.

[0025] Specifically, when the rate determination unit determines whether to correct the basic etching rate according to the crystal absorption rate, it includes: Comparing the crystal absorption rate with the crystal absorption rate threshold, and judging whether to correct the basic etching rate according to the comparison result; When the crystal absorption rate is greater than or equal to the crystal absorption rate threshold, it is determined that the basic etching rate is corrected; When the crystal absorption rate is less than the crystal absorption rate threshold, it is determined that the basic etching rate is not corrected, and the basic etching rate is used as the initial etching rate.

[0026] It can be understood that the crystal absorption rate threshold is also set based on a large amount of experimental data and the physical properties of the quartz crystal, and is used to determine whether the absorption of laser energy by the crystal has reached the level where the etching rate needs to be adjusted. When the crystal absorption rate is higher than or equal to the threshold, it means that the crystal has a strong absorption of laser energy, which may lead to an excessive etching rate. Therefore, the basic etching rate needs to be corrected to avoid over-etching or damaging the crystal. When the crystal absorption rate is lower than the threshold, it indicates that the absorption of laser energy by the crystal is moderate, and there is no need to adjust the basic etching rate to ensure the stability and accuracy of the etching process.

[0027] Specifically, when the rate determination unit determines the correction coefficient of the basic etching rate according to the initial vector group and obtains the initial etching rate, it includes: Comparing the initial vector group with the historical correction group, and determining the correction coefficient of the basic etching rate according to the comparison result; When there is a historical vector group in the historical correction group that is the same as the initial vector group, the historical correction coefficient corresponding to the historical vector group is used as the correction coefficient, and the product value of the historical correction coefficient and the basic etching rate is used as the initial etching rate; When there is no historical vector group in the historical correction group that is the same as the initial vector group, calculate the connection strength between the current initial vector group and each historical vector group, and extract the maximum connection strength; determine the correction coefficient of the basic etching rate according to the maximum connection strength, and use the product value of the correction coefficient and the basic etching rate as the initial etching rate.

[0028] In this embodiment, the connection strength is obtained by the following formula: ; where S(V, Vi) represents the connection strength between the current initial vector group V and the i-th historical vector group Vi in the historical correction group; ωj represents the weight coefficient of each vector component in the vector group, which is set according to experimental data and the physical properties of the quartz crystal; Vj represents the j-th vector component of the current initial vector group; Vij represents the j-th vector component of the i-th historical vector group in the historical correction group.

[0029] It can be understood that when there is a historical vector group in the historical correction group that is exactly the same as the initial vector group, directly using the historical correction coefficient corresponding to this historical vector group for correction can ensure the accuracy and reliability of the correction. Because the historical correction coefficient is obtained based on previous experimental data and etching experience, it has high reference value. When there is no historical vector group in the historical correction group that is exactly the same as the initial vector group, by calculating the connection strength between the current initial vector group and each historical vector group and extracting the maximum connection strength, a historical etching situation closest to the current etching condition can be found, and then the current basic etching rate can be corrected according to the correction coefficient corresponding to this historical etching situation. This correction method based on connection strength not only improves the flexibility of the correction, but also better adapts to the requirements under different etching conditions, ensuring the stability and accuracy of the etching process.

[0030] Specifically, when the rate determination unit determines the correction coefficient of the basic etching rate according to the maximum connection strength, it includes: When the historical vector group corresponding to the maximum connection strength is unique, taking the historical correction coefficient corresponding to the historical vector group corresponding to the maximum connection strength as the correction coefficient; When the historical vector group corresponding to the maximum connection strength is not unique, calculating the average correction coefficient according to the multiple historical vector groups corresponding to the maximum connection strength, and taking the average correction coefficient as the correction coefficient.

[0031] It can be understood that when the historical vector group corresponding to the maximum connection strength is not unique, there may be multiple historical etching situations similar to the current etching condition. To more accurately determine the correction coefficient, the system uses the average correction coefficient of these historical vector groups for correction. This method of averaging can comprehensively consider the influence of multiple similar historical etching situations, improving the accuracy and reliability of the correction coefficient. After determining the correction coefficient, the system multiplies this correction coefficient by the basic etching rate to obtain the initial etching rate. This initial etching rate provides an important reference basis for the subsequent etching process.

[0032] Specifically, when the judgment unit determines whether to adjust the initial etching rate according to the real-time etching image data, it includes: Performing feature extraction on the real-time etching image data to obtain etching image feature values; Obtaining the standard value of the etching image corresponding to the etching image feature value, and calculating the ratio of the etching image feature value to the standard value of the etching image, denoted as the etching ratio; Comparing the etching ratio with the etching ratio threshold, and judging whether to adjust the initial etching rate according to the comparison result; When the etching ratio is greater than or equal to the etching ratio threshold, it is determined that the initial etching rate is not adjusted; When the etching ratio is less than the etching ratio threshold, it is determined that the initial etching rate is adjusted.

[0033] In this embodiment, the etching image feature value is preferably the edge sharpness; the edge sharpness performs edge detection on the real-time etching image data by using a Sobel operator to obtain an edge image; then, the gradient value of the edge pixels in the edge image is calculated, and the average value of the gradient values of all the edge pixels is used as the edge sharpness.

[0034] In this embodiment, the standard value of the etching image is preset according to the expected etching effect and the physical properties of the quartz crystal, and is used to compare with the actual etching image feature value.

[0035] It can be understood that the judgment unit can monitor the etching effect in real time by extracting the features of the real-time etching image data and comparing with the standard value, and intelligently decide whether to adjust the initial etching rate according to the comparison result of the etching ratio and the threshold. The etching ratio, as an important indicator to measure the closeness of the actual etching effect to the expected target, is calculated based on the ratio of the etching image feature value to the standard value, and can intuitively reflect the stability and accuracy of the etching process. When the etching ratio reaches or exceeds the threshold, it indicates that the actual etching effect is consistent with the expected target, and there is no need to adjust the initial etching rate. When the etching ratio is lower than the threshold, it means that there is a deviation between the actual etching effect and the expected target. At this time, the system can automatically trigger the rate adjustment mechanism to correct the initial etching rate to ensure the accuracy and consistency of the etching process.

[0036] Specifically, when the rate adjustment unit determines the adjustment coefficient of the initial etching rate based on the angle data and the environment data and obtains the final etching rate, it includes: Analyze the angle data to obtain the laser incident angle and the laser reflection angle; Analyze the environment data to obtain the environmental temperature and the environmental humidity; Calculate the angle deviation value according to the laser incident angle and the laser reflection angle, and calculate the environment deviation value according to the environmental temperature and the environmental humidity; Calculate the comprehensive deviation value according to the angle deviation value and the environment deviation value; Determine the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, and use the product value of the adjustment coefficient and the initial etching rate as the final etching rate.

[0037] In this embodiment, the calculation formula of the angle deviation value is: ; Where, Δθ represents the angle deviation value; θk represents the laser incident angle; θbk represents the standard laser incident angle; θr represents the laser reflection angle; θbr represents the standard laser reflection angle.

[0038] In this embodiment, the calculation formula for the environmental deviation value is: ; Where, ΔE represents the environmental deviation value; μT represents the weight coefficient of the environmental temperature, preferably 0.6; T represents the environmental temperature; T0 represents the standard environmental temperature; μH represents the weight coefficient of the environmental humidity, preferably 0.4; H represents the environmental humidity; H0 represents the standard environmental humidity.

[0039] In this embodiment, the calculation formula for the comprehensive deviation value is: ; Where, Z represents the comprehensive deviation value; α represents the weight coefficient of the angle deviation value, preferably 0.45; Δθ represents the angle deviation value; β represents the weight coefficient of the environmental deviation value, preferably 0.55; ΔE represents the environmental deviation value.

[0040] It can be understood that the rate adjustment unit finely adjusts the initial etching rate by comprehensively considering multiple factors such as the laser incident angle, laser reflection angle, environmental temperature, and environmental humidity. The accurate measurement of the laser incident angle and reflection angle is crucial for evaluating the interaction between the laser and the quartz crystal, and they directly affect the distribution of laser energy and the uniformity of the etching effect. The environmental temperature and humidity may affect the propagation characteristics of the laser and the physical properties of the quartz crystal, thereby affecting the etching rate. By calculating the angle deviation value and the environmental deviation value and combining them into a comprehensive deviation value, the system can more comprehensively evaluate various deviations in the etching process, so as to determine a more accurate adjustment coefficient.

[0041] Specifically, when the rate adjustment unit determines the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, it includes: Comparing the comprehensive deviation value with a first comprehensive deviation value and a second comprehensive deviation value, and determining the adjustment coefficient of the initial etching rate according to the comparison result; where, the first comprehensive deviation value is less than the second comprehensive deviation value; When the comprehensive deviation value is less than or equal to the first comprehensive deviation value, determining the adjustment coefficient as the first adjustment coefficient; When the comprehensive deviation value is greater than the first comprehensive deviation value and less than the second comprehensive deviation value, determining the adjustment coefficient as the second adjustment coefficient; When the comprehensive deviation value is greater than or equal to the second comprehensive deviation value, determining the adjustment coefficient as the third adjustment coefficient.

[0042] In this embodiment, the magnitude relationship among the first adjustment coefficient, the second adjustment coefficient, and the third adjustment coefficient is the first adjustment coefficient < the second adjustment coefficient < the third adjustment coefficient.

[0043] It can be understood that this method of hierarchical adjustment based on the comprehensive deviation value can correct the initial etching rate to different degrees according to different levels of deviation, so as to more precisely control the final etching rate. When the comprehensive deviation value is small, it indicates that various deviations during the etching process are small. At this time, a small adjustment coefficient is used for fine-tuning to maintain the stability and accuracy of the etching rate. When the comprehensive deviation value is large, it means that the deviation during the etching process is large. At this time, a large adjustment coefficient is required for a large-scale correction to ensure that the etching effect meets the expectations. This strategy of hierarchical adjustment not only improves the control accuracy of the etching rate but also enhances the adaptability and robustness of the system.

[0044] Refer to Figure 2 As shown, in some embodiments of the present application, this embodiment provides an etching rate control method for laser double-sided etching of quartz crystals, including the following steps: S100: Collect the quartz crystal characteristic data of the quartz crystal to be etched and the target data of the laser double-sided etching, and analyze the quartz crystal characteristic data and the target data. Based on the analysis results, determine the initial etching rate of the laser double-sided etching; S200: Perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect the real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate according to the real-time etching image data; S300: When it is determined to adjust the initial etching rate, collect the angle data and environmental data of the laser double-sided etching, determine the adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtain the final etching rate; S400: Perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0045] Those skilled in the art should understand that the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0046] This application is described with reference to the flowcharts and / or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram can be implemented by computer program instructions, as well as the combination of flows and / or blocks in the flowchart and / or block diagram. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate a means for implementing the functions specified in one or more of the flows Figure 1 one or more of the flows and / or blocks Figure 1 a means for implementing the functions specified in one or more of the blocks or multiple blocks.

[0047] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including an instruction means, and the instruction means implements the functions specified in one or more of the flows Figure 1 one or more of the flows and / or blocks Figure 1 a means for implementing the functions specified in one or more of the blocks or multiple blocks.

[0048] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one or more of the flows Figure 1 one or more of the flows and / or blocks Figure 1 a means for implementing the functions specified in one or more of the blocks or multiple blocks.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: the specific implementation manners of the present invention can still be modified or equivalently replaced, and any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the protection scope of the claims of the present invention.

Claims

1. An etching rate control system for double-sided laser etching of quartz crystals, characterized in that, Including: A rate determination unit configured to collect quartz crystal characteristic data of a quartz crystal to be laser double-sided etched and target data of the laser double-sided etching, analyze the quartz crystal characteristic data and the target data, and determine an initial etching rate of the laser double-sided etching based on the analysis result; A judgment unit configured to perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate according to the real-time etching image data; A rate adjustment unit configured to, when it is determined to adjust the initial etching rate, collect angle data and environmental data of the laser double-sided etching, determine an adjustment coefficient of the initial etching rate based on the angle data and the environmental data, and obtain a final etching rate; An execution unit configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

2. The etching rate control system for double-sided laser etching of quartz crystals according to claim 1, wherein When the rate determination unit analyzes the quartz crystal characteristic data and the target data and determines the initial etching rate of the laser double-sided etching based on the analysis result, it includes: The quartz crystal characteristic data includes the crystal plane index, surface roughness, and crystal absorption rate of the quartz crystal to be etched; The target data includes etching depth and etching accuracy; Determine a basic etching rate of the laser double-sided etching according to the crystal plane index and the surface roughness; Judge whether to correct the basic etching rate according to the crystal absorption rate; When it is determined to correct the basic etching rate, construct an initial vector group according to the crystal absorption rate, etching depth, and etching accuracy, determine a correction coefficient of the basic etching rate according to the initial vector group, and obtain the initial etching rate.

3. The etching rate control system for double-sided laser etching of quartz crystals according to claim 2, characterized in that, When the rate determination unit determines the basic etching rate of the laser double-sided etching according to the crystal plane index and the surface roughness, it includes: Compare the crystal plane index with a crystal plane index threshold, compare the surface roughness with a surface roughness threshold, and determine the basic etching rate of the laser double-sided etching according to the comparison result; When the crystal plane index is greater than or equal to the crystal plane index threshold and the surface roughness is greater than or equal to the surface roughness threshold, determine the basic etching rate as a first etching rate; When the crystal plane index is greater than or equal to the crystal plane index threshold and the surface roughness is less than the surface roughness threshold, determine the basic etching rate as a second etching rate; When the crystal plane index is less than the crystal plane index threshold and the surface roughness is greater than or equal to the surface roughness threshold, determine the basic etching rate as a third etching rate; When the crystal plane index is less than the crystal plane index threshold and the surface roughness is less than the surface roughness threshold, determine the basic etching rate as a fourth etching rate.

4. The etching rate control system for double-sided laser etching of quartz crystals according to claim 3, characterized in that, When the rate determination unit judges whether to correct the basic etching rate according to the crystal absorption rate, it includes: Compare the crystal absorption rate with a crystal absorption rate threshold, and judge whether to correct the basic etching rate according to the comparison result; When the crystal absorption rate is greater than or equal to the crystal absorption rate threshold, it is determined that the basic etching rate is corrected; When the crystal absorption rate is less than the crystal absorption rate threshold, it is determined that the basic etching rate is not corrected, and the basic etching rate is used as the initial etching rate.

5. The etching rate control system for double-sided laser etching of quartz crystals according to claim 4, wherein When the rate determination unit determines the correction coefficient of the basic etching rate according to the initial vector group and obtains the initial etching rate, it includes: Comparing the initial vector group with the historical correction group, and determining the correction coefficient of the basic etching rate according to the comparison result; When there is a historical vector group in the historical correction group that is the same as the initial vector group, the historical correction coefficient corresponding to the historical vector group is used as the correction coefficient, and the product value of the historical correction coefficient and the basic etching rate is used as the initial etching rate; When there is no historical vector group in the historical correction group that is the same as the initial vector group, calculate the connection strength between the current initial vector group and each historical vector group, and extract the maximum connection strength; determine the correction coefficient of the basic etching rate according to the maximum connection strength, and use the product value of the correction coefficient and the basic etching rate as the initial etching rate.

6. The etching rate control system for double-sided laser etching of quartz crystals according to claim 5, characterized in that, When the rate determination unit determines the correction coefficient of the basic etching rate according to the maximum connection strength, it includes: When the historical vector group corresponding to the maximum connection strength is unique, the historical correction coefficient corresponding to the historical vector group with the maximum connection strength is used as the correction coefficient; When the historical vector group corresponding to the maximum connection strength is not unique, calculate the average correction coefficient according to the multiple historical vector groups corresponding to the maximum connection strength, and use the average correction coefficient as the correction coefficient.

7. The etching rate control system for double-sided laser etching of quartz crystals according to claim 1, wherein When the judgment unit determines whether to adjust the initial etching rate according to the real-time etching image data, it includes: Performing feature extraction on the real-time etching image data to obtain an etching image feature value; Obtaining the standard value of the etching image corresponding to the etching image feature value, and calculating the ratio of the etching image feature value to the standard value of the etching image, which is denoted as the etching ratio; Comparing the etching ratio with the etching ratio threshold, and determining whether to adjust the initial etching rate according to the comparison result; When the etching ratio is greater than or equal to the etching ratio threshold, it is determined that the initial etching rate is not adjusted; When the etching ratio is less than the etching ratio threshold, it is determined that the initial etching rate is adjusted.

8. The etching rate control system for double-sided laser etching of quartz crystals according to claim 7, characterized in that, When the rate adjustment unit determines the adjustment coefficient of the initial etching rate based on the angle data and the environment data and obtains the final etching rate, it includes: Analyzing the angle data to obtain the laser incident angle and the laser reflection angle; Analyzing the environment data to obtain the environmental temperature and the environmental humidity; Calculating an angle deviation value according to the laser incident angle and the laser reflection angle, and calculating an environment deviation value according to the environmental temperature and the environmental humidity; Calculating a comprehensive deviation value according to the angle deviation value and the environment deviation value; Determine an adjustment coefficient for the initial etching rate according to the comprehensive deviation value, and use the product value of the adjustment coefficient and the initial etching rate as the final etching rate.

9. The etching rate control system for double-sided laser etching of quartz crystals according to claim 8, characterized in that, When the rate adjustment unit determines the adjustment coefficient for the initial etching rate according to the comprehensive deviation value, it includes: Compare the comprehensive deviation value with a first comprehensive deviation value and a second comprehensive deviation value, and determine the adjustment coefficient for the initial etching rate according to the comparison result; wherein, the first comprehensive deviation value is less than the second comprehensive deviation value; When the comprehensive deviation value is less than or equal to the first comprehensive deviation value, determine that the adjustment coefficient is a first adjustment coefficient; When the comprehensive deviation value is greater than the first comprehensive deviation value and less than the second comprehensive deviation value, determine that the adjustment coefficient is a second adjustment coefficient; When the comprehensive deviation value is greater than or equal to the second comprehensive deviation value, determine that the adjustment coefficient is a third adjustment coefficient.

10. An etching rate control method for double-sided laser etching of quartz crystals, which is applied to the etching rate control system for double-sided laser etching of quartz crystals according to any one of claims 1-9, and is characterized in that, It includes: Collect the quartz crystal characteristic data of the quartz crystal to be etched and the target data of the laser double-sided etching, analyze the quartz crystal characteristic data and the target data, and determine the initial etching rate of the laser double-sided etching based on the analysis result; Perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect the real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate according to the real-time etching image data; When it is determined to adjust the initial etching rate, collect the angle data and environmental data of the laser double-sided etching, determine the adjustment coefficient for the initial etching rate based on the angle data and environmental data, and obtain the final etching rate; Perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

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