Photonic crystal Low-E glass

Abstract

The invention discloses photonic crystal Low-E glass, relates to the technical field of glass, and particularly belongs to the technical field of visible light and microwave high-transmittance low-emissivity glass. The problem that existing Low-E glass is low in visible light and microwave band transmittance is solved. The glass comprises a photonic crystal film and substrate glass; the photonic crystal film is plated on the substrate glass; the photonic crystal film is formed by uniformly distributing a plurality of structural units, and each structural unit comprises a reflecting layer, a protective layer and a dielectric layer; the reflecting layer, the protective layer and the dielectric layer are arranged aperiodically. The invention is suitable for Low-E glass in the fields of new energy automobiles and buildings.

Description

Technical Field

[0001] The present invention relates to the technical field of glass, specifically belonging to the technical field of low-emissivity glass with high visible light and microwave transmittance. Background Art

[0002] Under the background of the country's dual-carbon goal, the energy consumption of windows is close to 15% of the total social energy consumption, which is an important energy dissipation gap and causes huge economic losses to the country. The heat loss through windows mainly occurs in the following ways: Conduction: Heat is transferred from the indoor to the outdoor through the materials of the window, such as the window and the frame. Convection: The air flow around the window can promote the flow of heat. Radiation: Thermal radiation is the heat energy propagated in the form of electromagnetic waves, and the window glass will release infrared radiation.

[0003] By designing a Low-E coating, the low-radiation property can be effectively achieved, thus realizing the effect of isolating the internal and external radiation from each other. In summer, this coating helps to reflect the solar thermal radiation, thereby keeping the indoor cool. In winter, the coating helps to keep the indoor thermal radiation from being released to the outside, increasing the indoor warmth. At the same time, the Low-E coating indirectly reduces the convection of the air around the window by reducing the temperature difference on the glass surface. Therefore, optimizing the thermal performance of Low-E glass can effectively solve the energy-saving problem of windows.

[0004] Currently, there are two main problems in the research on Low-E glass: visible light transmittance and electromagnetic signal transmittance. As the main product for window energy conservation, Low-E glass usually has a film system product composed of metal or other metal oxides coated on the glass surface. However, there is a contradiction between the visible light transparency and the low-radiation property in its structure, that is, the better the low-radiation performance, the lower the transmittance in the visible light band. At the same time, due to the good electrical conductivity of the Low-E thin film, the low-emissivity glass naturally has a strong shielding effect on electromagnetic waves. The signal shielding effect of common Low-E glass can reach more than 20 dB, resulting in the problem that it is difficult to transmit GPS, Bluetooth, and mobile communication signals. The above problems have hindered the further promotion of Low-E glass products to new energy vehicles and the building field. Summary of the Invention

[0005] The present invention aims to solve the problem of low transmittance of existing Low-E glass in the visible light and microwave bands.

[0006] To achieve the above object, the present invention provides the following solution:

[0007] The present invention provides a photonic crystal Low-E glass, which includes a photonic crystal thin film and a substrate glass;

[0008] The photonic crystal thin film is coated on the substrate glass;

[0009] The photon crystal thin film is uniformly composed of multiple structural units, and the structural unit includes a reflective layer, a protective layer, and a dielectric layer;

[0010] The three types of layers, namely the reflective layer, the protective layer, and the dielectric layer, are arranged non-periodically.

[0011] Furthermore, there is a preferred embodiment in which the width of the above-mentioned structural unit is 0.1 mm to 50 mm.

[0012] Furthermore, there is a preferred embodiment in which a groove is provided between adjacent structural units;

[0013] The width w of the groove is 1 μm to 1 mm.

[0014] Furthermore, there is a preferred embodiment in which the above-mentioned structural unit is implemented in a triangle, a quadrilateral, or a hexagon.

[0015] Furthermore, there is a preferred embodiment in which the circumscribed size a of the quadrilateral is 2 mm, the circumscribed size b = a × k, where k is a proportionality coefficient, and the range of k is 0.1 to 1.

[0016] Furthermore, there is a preferred embodiment in which the above-mentioned non-periodic arrangement is a cyclic arrangement with the protective layer on both sides of the reflective layer and the dielectric layer on both sides of the protective layer.

[0017] Furthermore, there is a preferred embodiment in which the above-mentioned non-periodic arrangement is a cyclic arrangement with the protective layer on both sides of the reflective layer, and there is no need for a dielectric layer between adjacent protective layers, and only a dielectric layer is provided at the head and tail of the protective layer.

[0018] Furthermore, there is a preferred embodiment in which the thickness of the above-mentioned reflective layer is 10 nm to 500 nm;

[0019] The thickness of the protective layer is 10 nm to 500 nm;

[0020] The thickness of the dielectric layer is 10 nm to 10 μm.

[0021] Furthermore, there is a preferred embodiment in which the above-mentioned reflective layer is implemented using silver or indium tin oxide material;

[0022] The above-mentioned protective layer is implemented using tin oxide or silicon nitride material;

[0023] The above-mentioned dielectric layer is implemented using silicon dioxide, tin oxide, zinc oxide, or silicon nitride material.

[0024] Furthermore, there is a preferred embodiment in which the thickness of the substrate glass is 0.01 mm to 50 mm.

[0025] The beneficial effects of the present invention are:

[0026] The present invention provides a photonic crystal Low-E glass. By arranging three types of layers, namely a reflective layer, a protective layer, and a dielectric layer, in an aperiodic manner, and simultaneously defining the thickness and materials of the reflective layer, the protective layer, and the dielectric layer, a photonic crystal structure composed of multiple layers of films is formed. This structure can have an impact on light in a specific wavelength band, that is, wave interference will occur between the interfaces of different structures, thereby increasing the transmittance in the visible light band. Moreover, grooves are provided between adjacent structural units to achieve the transmission of wide-band electromagnetic signals. At the same time, due to the introduction of multiple reflective layers in the photonic crystal structure, the infrared low-emission performance can be effectively achieved.

[0027] The present invention belongs to an invention and creation that overcomes the prejudice of the prior art:

[0028] The present invention breaks through the technical bottleneck that the better the existing low-emission performance, the lower the transmittance in the visible light and microwave bands. The present invention proposes a new design idea for low-emission glass, enabling the glass to have a high transmittance in the visible light band and a high transmittance of wide-band electromagnetic signals while having low-emission performance, overcoming the difficulties of the prior art.

[0029] Furthermore, compared with the prior art, the present invention designs a material with a periodic thin-film structure, which can regulate the propagation characteristics of visible light-near infrared. While achieving a high transmittance in the visible light band, it can effectively reflect in the near infrared and mid-far infrared bands.

[0030] Furthermore, by optimizing the photonic crystal structure, the low emissivity in the infrared band can be effectively achieved, and at the same time, the Low-E glass has a higher transmittance in the visible light band, providing a clearer vision for users. In terms of reducing the emissivity, due to the use of multiple layers of conductive materials, the photonic crystal structure can reflect more infrared rays and reduce the heat transfer.

[0031] The present invention is applicable to Low-E glass in new energy vehicles and the construction field. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic structural diagram of a photonic crystal Low-E glass according to the present invention;

[0033] Figure 2 is a schematic structural diagram of the structural unit according to the present invention;

[0034] Figure 3 is a change curve graph of the electromagnetic transmittance and infrared emissivity with different groove widths according to the present invention;

[0035] Figure 4 is a relationship diagram between the groove width and the infrared emissivity according to the present invention;

[0036] Figure 5It is a schematic structural diagram in which the structural unit described in the present invention is implemented by a quadrilateral;

[0037] Figure 6 It is a relationship diagram showing the change of the transmittance with the increase of frequency for different proportionality coefficients k described in the present invention.

[0038] Wherein, 1 - structural unit, 11 - reflective layer, 12 - protective layer, 13 - dielectric layer. Specific Embodiments

[0039] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present application. However, those skilled in the art should clearly understand that the present application can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid unnecessary details from interfering with the description of the present application.

[0040] The specific embodiments of the present invention will be further described in detail below in conjunction with the drawings and embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several changes and improvements can still be made, and these all belong to the protection scope of the present invention.

[0041] Embodiment 1. Refer to Figure 1 and Figure 2 to illustrate this embodiment. This embodiment provides a photonic crystal Low-E glass, and the Low-E glass includes a photonic crystal thin film and a substrate glass;

[0042] The photonic crystal thin film is coated on the substrate glass;

[0043] The photonic crystal thin film is uniformly composed of a plurality of structural units 1, and the structural unit 1 includes a reflective layer 11, a protective layer 12, and a dielectric layer 13;

[0044] The three types of layers, namely the reflective layer 11, the protective layer 12, and the dielectric layer 13, are arranged non-periodically.

[0045] In the actual application of this embodiment, the photonic crystal thin film is coated on the substrate glass to form a photonic crystal Low-E glass; wherein, as Figure 1 shown, the photonic crystal thin film is uniformly composed of a plurality of structural units 1, and there are grooves between adjacent structural units 1. As Figure 2As shown, the structural unit 1 includes a reflective layer 11, a protective layer 12, and a dielectric layer 13; the three types of layers, namely the reflective layer 11, the protective layer 12, and the dielectric layer 13, are arranged non-periodically; among them, the function of the reflective layer 11 is to reflect infrared rays, the function of the protective layer 12 is to prevent the reflective layer 11 from being oxidized and thus losing the ability to reflect infrared rays, and the dielectric layer 13 is used to optimize the optical performance of the coating. At the same time, the thicknesses and materials of the reflective layer, the protective layer, and the dielectric layer are defined to form a photonic crystal structure composed of multiple layers of films. This structure can have an impact on light in a specific wavelength band, that is, wave interference will occur between the interfaces of different structures, thereby increasing the transmittance in the visible light band. At the same time, grooves are provided between adjacent structural units 1 to achieve the transmission of wide-band electromagnetic signals.

[0046] In this embodiment, by arranging the three types of layers, namely the reflective layer 11, the protective layer 12, and the dielectric layer 13, non-periodically, and at the same time defining the thicknesses and materials of the reflective layer, the protective layer, and the dielectric layer, a photonic crystal structure composed of multiple layers of films is formed. With the help of wave interference between the film interfaces, the transmittance in the visible light band is increased. And grooves are provided between adjacent structural units 1 to achieve the transmission of wide-band electromagnetic signals, thereby increasing the transmittance in the microwave band. At the same time, due to the introduction of multiple reflective layers in the photonic crystal structure, the infrared low-emissivity performance can be effectively achieved.

[0047] Embodiment 2: This embodiment gives an example of the width of the structural unit 1 in a photonic crystal Low-E glass described in Embodiment 1;

[0048] The width of the structural unit 1 is 0.1 mm to 50 mm.

[0049] Embodiment 3: Refer to Figure 3 To illustrate this embodiment, this embodiment gives an example of multiple structural units 1 in a photonic crystal Low-E glass described in Embodiment 2;

[0050] Grooves are provided between adjacent structural units 1;

[0051] The width w of the groove is 1 μm to 1 mm.

[0052] In the actual application of this embodiment, grooves are provided between adjacent structural units 1 to achieve the transmission of wide-band electromagnetic signals. The width w of the groove is limited to 1 μm to 1 mm. The widths w of the grooves are selected to be 0.1 mm, 0.3 mm, 0.5 mm, and 0.7 mm respectively to verify the relationship between the increase in frequency and the transmittance. As Figure 3 shown, it can be seen from the figure that as the width of the groove becomes narrower, the electromagnetic transmittance shows an upward trend, but the change is not significant. However, when the width of the groove becomes narrower, the filling rate of the thin film will increase significantly, thereby effectively reducing the infrared emissivity. As Figure 4As shown. Therefore, in this embodiment, by setting the groove width between adjacent structural units and the emissivity of the structural units, the relationship between 5G signal transmission and low-radiation performance is effectively balanced.

[0053] Embodiment 4: This embodiment is an example of the structural unit 1 in a photonic crystal Low-E glass described in Embodiment 3.

[0054] The structural unit 1 is implemented by a triangle, a quadrilateral, or a hexagon.

[0055] Embodiment 5: Refer to Figure 5 and Figure 6 to illustrate this embodiment. This embodiment is an example of the circumscribed dimensions of a quadrilateral in a photonic crystal Low-E glass described in Embodiment 4.

[0056] The circumscribed dimensions a of the quadrilateral are 2 mm, and the circumscribed dimension b = a × k, where k is a proportionality coefficient, and the range of k is 0.1 to 1.

[0057] In the actual application of this embodiment, the structural unit 1 is implemented by a quadrilateral. Among them, as Figure 5 shown, the circumscribed dimension a of the quadrilateral is 2 mm, and the circumscribed dimension b of the quadrilateral = a × k, where k is a proportionality coefficient, and k is 0.1 to 1. When k is selected as 0.8, 0.6, and 0.4, the electromagnetic transmission performance is explored. As Figure 6 shown, it can be seen from the figure that when k gradually decreases, although the transmittance of the electromagnetic signal decreases, the influence is not significant, and the electromagnetic transmittance is still above 0.8.

[0058] Embodiment 6: Refer to Figure 2 to illustrate this embodiment. This embodiment is an example of the non-periodic arrangement in a photonic crystal Low-E glass described in Embodiment 1.

[0059] The non-periodic arrangement is a cyclic arrangement with a protective layer 12 on both sides of the reflective layer 11 and a dielectric layer 13 on both sides of the protective layer 12.

[0060] In the actual application of this embodiment, the non-periodic arrangement is a cyclic arrangement with a protective layer 12 on both sides of the reflective layer 11 and a dielectric layer 13 on both sides of the protective layer 12, as Figure 2As shown, the non-periodic arrangement is a cyclic arrangement of a dielectric layer 13, a protective layer 12, a reflective layer 11, a protective layer 12, a dielectric layer 13, a protective layer 12, a reflective layer 11, a protective layer 12, a dielectric layer 13... At the same time, the thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13 are controlled so that the film thicknesses in the cycle are inconsistent, enhancing infrared reflection and achieving an antireflection effect in the visible light band. Among them, the thickness range of the reflective layer 11 is 10 nm to 500 nm; the thickness range of the protective layer 12 is 10 nm to 500 nm; the thickness range of the dielectric layer 13 is 10 nm to 10 μm.

[0061] Embodiment 7: This embodiment gives an example of the non-periodic arrangement in a photonic crystal Low-E glass described in Embodiment 1;

[0062] The non-periodic arrangement may also be such that the protective layer 12 is on both sides of the reflective layer 11, and there is no need for a dielectric layer 13 between two adjacent protective layers 12, and there is only a dielectric layer 13 at the head and tail of the protective layer 12 in a cyclic arrangement.

[0063] In actual application of this embodiment, the non-periodic arrangement may also be such that the protective layer 12 is on both sides of the reflective layer 11, and there is no need for a dielectric layer 13 between two adjacent protective layers 12, and there is only a dielectric layer 13 at the head and tail of the protective layer 12 in a cyclic arrangement. That is, the non-periodic arrangement is a cyclic arrangement of a dielectric layer 13, a protective layer 12, a reflective layer 11, a protective layer 12, a reflective layer 11, a protective layer 12,... a dielectric layer 13. By matching different thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13, the enhancement of infrared reflection and the antireflection effect in the visible light band can also be achieved.

[0064] Embodiment 8: This embodiment gives an example of the thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13 in a photonic crystal Low-E glass described in Embodiment 6 or Embodiment 7;

[0065] The thickness of the reflective layer 11 is 10 nm to 500 nm;

[0066] The thickness of the protective layer 12 is 10 nm to 500 nm;

[0067] The thickness of the dielectric layer 13 is 10 nm to 10 μm.

[0068] In this embodiment, by limiting the thickness ranges of the reflective layer 11, the protective layer 12, and the dielectric layer 13, the film thicknesses in the cycle are made inconsistent. Combining with the non-periodic arrangement of the reflective layer 11, the protective layer 12, and the dielectric layer 13, the enhancement of infrared reflection and the antireflection effect in the visible light band are achieved.

[0069] Embodiment Nine: This embodiment illustrates the materials of the reflective layer 11, the protective layer 12, and the dielectric layer 13 in the photonic crystal Low-E glass described in Embodiment Eight;

[0070] The reflective layer 11 is implemented using silver or indium tin oxide material;

[0071] The protective layer 12 is implemented using tin oxide or silicon nitride material;

[0072] The dielectric layer 13 is implemented using silicon dioxide, tin oxide, zinc oxide, or silicon nitride material.

[0073] The reflective layer 11 described in this embodiment is implemented using silver or indium tin oxide material, which can effectively reflect light in the infrared band. By defining the materials of the reflective layer 11, the protective layer 12, and the dielectric layer 13, and controlling the different thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13, the protective layer 11 and the dielectric layer 13 can not only protect the reflective layer 11 from oxidation and corrosion, but also effectively enhance the transmittance in the visible light band.

[0074] Embodiment Ten: This embodiment illustrates the thickness of the substrate glass in the photonic crystal Low-E glass described in Embodiment One;

[0075] The thickness of the substrate glass is 0.01 mm to 50 mm.

[0076] The above are only the embodiments of the present invention and do not limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the scope of the claims of the present invention.

Claims

1. A kind of photonic crystal Low-E glass, characterized in that, The glass includes a photonic crystal thin film and a substrate glass; The photonic crystal thin film is coated on the substrate glass; The photonic crystal thin film is uniformly formed by a plurality of structural units (1), and the structural unit (1) includes a reflective layer (11), a protective layer (12), and a dielectric layer (13); The three types of layers, namely the reflective layer (11), the protective layer (12), and the dielectric layer (13), are arranged non-periodically.

2. The one kind of photonic crystal Low-E glass according to claim 1, characterized in that, The width of the structural unit (1) is 0.1 mm to 50 mm.

3. The one kind of photonic crystal Low-E glass according to claim 2, characterized in that, A groove is provided between adjacent structural units (1); The width w of the groove is 1 μm to 1 mm.

4. A kind of photonic crystal Low-E glass according to claim 3, characterized in that, The structural unit (1) is implemented in a triangular, quadrilateral, or hexagonal shape.

5. A kind of photonic crystal Low-E glass according to claim 4, characterized in that, The circumscribed dimensions a of the quadrilateral are 2 mm, and the circumscribed dimension b = a × k, where k is a proportionality coefficient, and the range of k is 0.1 to 1.

6. The one kind of photonic crystal Low-E glass according to claim 1, characterized in that, The non-periodic arrangement is a cyclic arrangement with the protective layer (12) on both sides of the reflective layer (11), and the dielectric layer (13) on both sides of the protective layer (12).

7. The one kind of photonic crystal Low-E glass according to claim 1, characterized in that, The non-periodic arrangement is a cyclic arrangement with the protective layer (12) on both sides of the reflective layer (11), and there is no need for a dielectric layer (13) between two adjacent protective layers (12), and only the dielectric layer (13) is provided at the head and tail of the protective layer (12).

8. A kind of photonic crystal Low-E glass according to claim 6, characterized in that, The thickness of the reflective layer (11) is 10 nm to 500 nm; The thickness of the protective layer (12) is 10 nm to 500 nm; The thickness of the dielectric layer (13) is 10 nm to 10 μm.

9. The one kind of photonic crystal Low-E glass according to claim 8, characterized in that, The reflective layer (11) is implemented using silver or indium tin oxide material; The protective layer (12) is implemented using tin oxide or silicon nitride material; The dielectric layer (13) is implemented using silicon dioxide, tin oxide, zinc oxide, or silicon nitride material.

10. A kind of photonic crystal Low-E glass according to claim 1, characterized in that, The thickness of the substrate glass is 0.01 mm to 50 mm.

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