Photonic crystal low-e glass

Abstract

The application relates to a photonic crystal Low-E glass, and belongs to the technical field of low-emissivity glass with high visible light and microwave transmittance. The glass solves the problem of low visible light and microwave transmittance of the existing Low-E glass. The glass comprises a photonic crystal film and a base glass; the photonic crystal film is coated on the base glass; the photonic crystal film is uniformly composed of multiple structural units; the structural units comprise a reflecting layer, a protective layer and a dielectric layer; the three types of layers are arranged in a non-periodic mode. The application is suitable for Low-E glass in the fields of new energy vehicles and buildings.

Description

Technical Field

[0001] This invention relates to the field of glass technology, specifically to the field of low-emissivity glass with high transmittance of visible light and microwaves. Background Technology

[0002] Heat loss through windows occurs primarily through the following mechanisms: Conduction: Heat is transferred from the interior to the exterior through the window's materials, such as the window frame. Convection: Airflow around the window promotes heat transfer. Radiation: Thermal radiation is heat energy transmitted in the form of electromagnetic waves; window glass emits infrared radiation.

[0003] By designing a Low-E coating, low emissivity can be effectively achieved, thus isolating internal and external radiation. In summer, this coating helps reflect solar heat radiation, keeping the interior cool. In winter, the coating helps prevent indoor heat radiation from escaping to the outside, increasing indoor warmth. Simultaneously, the Low-E coating indirectly reduces air convection around the window by lowering the temperature difference across the glass surface. Therefore, optimizing the thermal performance of Low-E glass can effectively solve the energy-saving problem of windows.

[0004] Current research on Low-E glass faces two main challenges: visible light transmittance and electromagnetic signal transmittance. As a primary energy-saving window product, Low-E glass typically consists of a film system composed of metals or other metal oxides coated on its surface. However, its structure presents a contradiction between visible light transparency and low emissivity; that is, the better the low emissivity, the lower the transmittance in the visible light band. Simultaneously, due to the excellent conductivity of Low-E films, low-emissivity glass naturally exhibits a strong shielding effect against electromagnetic waves. Common Low-E glass can achieve signal shielding effects exceeding 20dB, resulting in difficulty transmitting GPS, Bluetooth, and mobile phone communication signals. These issues hinder the further promotion of Low-E glass products in the fields of new energy vehicles and construction. Summary of the Invention

[0005] This invention aims to solve the problem of low transmittance of existing Low-E glass in the visible and microwave bands.

[0006] To achieve the above objectives, the present invention provides the following solution:

[0007] This invention provides a photonic crystal Low-E glass, the glass comprising a photonic crystal thin film and a substrate glass;

[0008] The photonic crystal thin film is deposited on the substrate glass;

[0009] The photonic crystal thin film is composed of multiple structural units evenly distributed together, and the structural unit includes a reflective layer, a protective layer and a dielectric layer;

[0010] The three types of layers, the reflecting layer, the protective layer and the medium layer, are arranged in a non-periodic manner.

[0011] Further, there is another preferred embodiment that the width of the structural unit is 0.1mm-50mm.

[0012] Further, there is another preferred embodiment that a groove is arranged between the adjacent structural units.

[0013] The width of the groove is 1um-1mm.

[0014] Further, there is another preferred embodiment that the structural unit is realized in a triangular shape, a quadrilateral shape or a hexagonal shape.

[0015] Further, there is another preferred embodiment that the circumscribed size a of the quadrilateral shape is 2mm, the circumscribed size b=a×k, k is a proportional coefficient, and the range of k is 0.1-1.

[0016] Further, there is another preferred embodiment that the non-periodic arrangement is a cyclic arrangement with the two sides of the reflecting layer being the protective layer and the two sides of the protective layer being the medium layer.

[0017] Further, there is another preferred embodiment that the non-periodic arrangement is a cyclic arrangement with the two sides of the reflecting layer being the protective layer, and the adjacent two protective layers do not need the medium layer, and only the head and tail of the protective layer are the cyclic arrangement of the medium layer.

[0018] Further, there is another preferred embodiment that the thickness of the reflecting layer is 10nm-500nm.

[0019] The thickness of the protective layer is 10nm-500nm.

[0020] The thickness of the medium layer is 10nm-10um.

[0021] Further, there is another preferred embodiment that the reflecting layer is realized by silver or indium tin oxide material.

[0022] The protective layer is realized by tin oxide or silicon nitride material.

[0023] The medium layer is realized by silicon dioxide, tin oxide, zinc oxide or silicon nitride material.

[0024] Further, there is another preferred embodiment that the thickness of the base glass is 0.01mm-50mm.

[0025] The beneficial effects of the present application are as follows:

[0026] The application provides a photonic crystal Low-E glass, by arranging three types of layers of a reflective layer, a protective layer and a medium layer in a non-periodic manner, and limiting the thickness and material of the reflective layer, the protective layer and the medium layer, a photonic crystal structure composed of a multilayer film is formed, the structure can affect light of a specific wave band, that is, interference of the wave will be generated between the interfaces of different structures, thereby increasing the transmittance of the visible light wave band, and a groove is arranged between adjacent structure units, the transmittance of a wide-band electromagnetic signal is realized, and meanwhile, due to the introduction of the multilayer reflective layer in the photonic crystal structure, the infrared low-radiation performance can be effectively realized.

[0027] The application belongs to an invention and creation overcoming the prejudice of the prior art:

[0028] The application breaks the technical bottleneck that the better the low-radiation performance is, the lower the transmittance of visible light and microwaves is, and provides a new design idea of low-radiation glass, so that the glass has low-radiation performance, high transmittance of the visible light wave band and high transmittance of a wide-band electromagnetic signal, and overcomes the difficulties of the prior art.

[0029] Further, compared with the prior art, the application designs a material with a periodic thin film structure, which can regulate and control the propagation characteristics of visible light-near infrared.

[0030] Further, by optimizing the photonic crystal structure, the low-emissivity in the infrared wave band can be effectively realized, and meanwhile, the Low-E glass has higher transmittance in the visible light wave band, so that a user is provided with a clearer view.

[0031] The application is suitable for Low-E glass in the fields of new energy vehicles and buildings. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 is a structural schematic diagram of the photonic crystal Low-E glass according to the application;

[0033] Figure 2 is a structural schematic diagram of the structure unit according to the application;

[0034] Figure 3 is a variation curve diagram of electromagnetic transmittance and infrared emissivity with different groove widths according to the application;

[0035] Figure 4 is a relationship diagram of the groove width and the infrared emissivity according to the application;

[0036] Figure 5is a structural schematic diagram of the structural unit of the present application realized by a quadrilateral;

[0037] Figure 6 is a graph showing the change of transmittance with increasing frequency of different proportion coefficients k of the present application.

[0038] Wherein, 1-structural unit, 11-reflective layer, 12-protective layer, 13-dielectric layer. DETAILED DESCRIPTION

[0039] In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular architectures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application can be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

[0040] The specific embodiments of the present application will be further described in the following with reference to the accompanying drawings and examples. The following examples will help those skilled in the art to further understand the present application, but do not limit the present application in any form. It should be noted that for those skilled in the art, without departing from the concept of the present application, a number of changes and improvements can be made, which are within the scope of protection of the present application.

[0041] Embodiment one, see Figure 1 and Figure 2 This embodiment is described, and the present embodiment provides a photonic crystal Low-E glass, which comprises a photonic crystal thin film and a base glass;

[0042] The photonic crystal thin film is plated on the base glass;

[0043] The photonic crystal thin film is composed of a plurality of structural units 1, which comprises a reflective layer 11, a protective layer 12 and a dielectric layer 13;

[0044] The reflective layer 11, the protective layer 12 and the dielectric layer 13 are arranged in a non-periodic manner.

[0045] In practical application, the photonic crystal thin film is plated on the base glass to form a photonic crystal Low-E glass; wherein, as shown in Figure 1 The photonic crystal thin film is composed of a plurality of structural units 1, and a groove is arranged between adjacent structural units 1. As shown in Figure 2As shown, the structural unit 1 includes a reflective layer 11, a protective layer 12 and a dielectric layer 13; the three types of layers are arranged in a non-periodic manner; wherein the reflective layer 11 functions to reflect infrared light, the protective layer 12 functions to prevent the reflective layer 11 from being oxidized and thus losing the ability to reflect infrared light, and the dielectric layer 13 is used to optimize the optical performance of the coating, while the thickness and material of the reflective layer, the protective layer and the dielectric layer are limited to form a photonic crystal structure composed of multiple layers of films. This structure can affect light of a specific waveband, that is, interference of waves between different interfaces of the structure will occur, thereby increasing the transmittance of the visible light waveband, while grooves are provided between adjacent structural units 1 to achieve the transmission of wide-band electromagnetic signals.

[0046] The embodiment forms a photonic crystal structure composed of multiple layers of films by arranging the three types of layers of the reflective layer 11, the protective layer 12 and the dielectric layer 13 in a non-periodic manner, while limiting the thickness and material of the reflective layer, the protective layer and the dielectric layer, thereby increasing the transmittance of the visible light waveband through the interference of waves between the film layer interfaces, and grooves are provided between adjacent structural units 1 to achieve the transmission of wide-band electromagnetic signals, thereby increasing the transmittance of the microwave waveband, and the introduction of multiple reflective layers in the photonic crystal structure can effectively achieve infrared low-emissivity performance.

[0047] Embodiment two, the embodiment is to illustrate the width of the structural unit 1 in the photonic crystal Low-E glass described in embodiment one;

[0048] The width of the structural unit 1 is 0.1mm-50mm.

[0049] Embodiment three, referring to Figure 3 The embodiment is to illustrate multiple structural units 1 in the photonic crystal Low-E glass described in embodiment two;

[0050] Grooves are provided between adjacent structural units 1;

[0051] The groove width w is 1um-1mm.

[0052] The embodiment provides grooves between adjacent structural units 1 to achieve the transmission of wide-band electromagnetic signals. The groove width w is limited to 1um-1mm, and the groove width w is selected to be 0.1mm, 0.3mm, 0.5mm and 0.7mm to verify the relationship between the frequency increase and the transmittance, as shown in Figure 3 As shown in the figure, it can be seen that as the groove width becomes narrower, the electromagnetic transmittance shows an upward trend, but the change is not large. However, when the groove width becomes narrower, the filling rate of the film will increase significantly, thereby effectively reducing the infrared emissivity, as shown in Figure 4The embodiment effectively balances the relationship between 5G signal transmission and low radiation performance by setting the groove width between adjacent structural units and the emissivity of the structural units.

[0053] Embodiment four, the embodiment is a structural unit 1 in a photonic crystal Low-E glass described in embodiment three;

[0054] The structural unit 1 is realized by a triangle, a quadrilateral or a hexagon.

[0055] Embodiment five, referring to Figure 5 and Figure 6 The embodiment is illustrated, and the embodiment is a circumscribed size of a quadrilateral in a photonic crystal Low-E glass described in embodiment four;

[0056] The circumscribed size a of the quadrilateral is 2mm, and the circumscribed size b of the quadrilateral is a x k, k is a proportional coefficient, and k ranges from 0.1 to 1.

[0057] In actual application, the structural unit 1 is realized by a quadrilateral, wherein, as shown in Figure 5 The circumscribed size a of the quadrilateral is 2mm, the circumscribed size b of the quadrilateral is a x k, k is a proportional coefficient, and k ranges from 0.1 to 1. When k is selected as 0.8, 0.6 and 0.4, electromagnetic transmission performance is explored, as shown in Figure 6 As can be seen from the figure, when k gradually decreases, the electromagnetic signal transmission rate decreases slightly, but the influence is not great, and the electromagnetic transmission rate is still above 0.8.

[0058] Embodiment six, referring to Figure 2 The embodiment is illustrated, and the embodiment is a non-periodic arrangement in a photonic crystal Low-E glass described in embodiment one;

[0059] The non-periodic arrangement is a cyclic arrangement of the two sides of the reflective layer 11 as the protective layer 12, and the two sides of the protective layer 12 as the dielectric layer 13.

[0060] In actual application, the non-periodic arrangement is a cyclic arrangement of the two sides of the reflective layer 11 as the protective layer 12, and the two sides of the protective layer 12 as the dielectric layer 13, as shown in Figure 2As shown, the non-periodic arrangement is a cyclic arrangement of the dielectric layer 13, the protective layer 12, the reflective layer 11, the protective layer 12, the dielectric layer 13, the protective layer 12, the reflective layer 11, the protective layer 12, the dielectric layer 13, and so on. The thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13 are controlled so that the film thicknesses in the cycle are inconsistent, thereby achieving enhancement of infrared reflection and simultaneously achieving an antireflection effect in the visible light band. The thickness of the reflective layer 11 ranges from 10 nm to 500 nm; the thickness of the protective layer 12 ranges from 10 nm to 500 nm; and the thickness of the dielectric layer 13 ranges from 10 nm to 10 um.

[0061] Embodiment Seven, the embodiment is a kind of non-periodic arrangement in the photonic crystal Low-E glass described in embodiment one is illustrated;

[0062] The non-periodic arrangement can also be that the two sides of the reflective layer 11 are the protective layer 12, and there is no dielectric layer 13 between the adjacent two protective layers 12, only the cyclic arrangement of the dielectric layer 13 at the beginning and end of the protective layer 12.

[0063] In actual application, the non-periodic arrangement can also be that the two sides of the reflective layer 11 are the protective layer 12, and there is no dielectric layer 13 between the adjacent two protective layers 12, only the cyclic arrangement of the dielectric layer 13 at the beginning and end of the protective layer 12. That is, the non-periodic arrangement is a cyclic arrangement of the dielectric layer 13, the protective layer 12, the reflective layer 11, the protective layer 12, the reflective layer 11, the protective layer 12, and so on. By matching the different thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13, the enhancement of infrared reflection and the antireflection effect in the visible light band can also be achieved.

[0064] Embodiment Eight, the embodiment is an illustration of the thicknesses of the reflective layer 11, the protective layer 12, and the dielectric layer 13 in the photonic crystal Low-E glass described in embodiment six or embodiment seven;

[0065] The thickness of the reflective layer 11 ranges from 10 nm to 500 nm;

[0066] The thickness of the protective layer 12 ranges from 10 nm to 500 nm;

[0067] The thickness of the dielectric layer 13 ranges from 10 nm to 10 um.

[0068] By limiting the thickness ranges of the reflective layer 11, the protective layer 12, and the dielectric layer 13, the film thicknesses in the cycle are inconsistent, and the enhancement of infrared reflection and the antireflection effect in the visible light band can be achieved by combining the non-periodic arrangement of the reflective layer 11, the protective layer 12, and the dielectric layer 13.

[0069] Embodiment nine, the embodiment is a kind of photonic crystal Low-E glass in the material of reflecting layer 11, protective layer 12 and dielectric layer 13 described in embodiment eight is exemplified;

[0070] The reflecting layer 11 is realized by silver or indium tin oxide material;

[0071] The protective layer 12 is realized by tin oxide or silicon nitride material;

[0072] The dielectric layer 13 is realized by silicon dioxide, tin oxide, zinc oxide or silicon nitride material.

[0073] The reflecting layer 11 described in the embodiment is realized by silver or indium tin oxide material, which can effectively reflect infrared band light. By limiting the materials of reflecting layer 11, protective layer 12 and dielectric layer 13, and controlling the different thicknesses of reflecting layer 11, protective layer 12 and dielectric layer 13, protective layer 11 and dielectric layer 13 can not only protect reflecting layer 11 from oxidation and corrosion, but also effectively enhance the transmittance in the visible light band.

[0074] Embodiment ten, the embodiment is a kind of photonic crystal Low-E glass in the thickness of base glass described in embodiment one is exemplified;

[0075] The thickness of the base glass is 0.01mm-50mm.

[0076] The above only for the embodiment of the present application, and does not limit to the present application, for the person skilled in the art, the present application can have various changes and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the scope of claims of the present application.

Claims

1. A photonic crystal Low-E glass, characterized in that, The glass comprises a photonic crystal film and a base glass; The photonic crystal film is plated on the base glass; The photonic crystal film is composed of a plurality of structural units (1), and the structural unit (1) comprises a reflection layer (11), a protective layer (12) and a medium layer (13); The reflection layer (11), the protective layer (12) and the medium layer (13) are arranged in a non-periodic manner; The non-periodic arrangement is a cyclic arrangement in which the two sides of the reflection layer (11) are the protective layer (12), and the two sides of the protective layer (12) are the medium layer (13); or a cyclic arrangement in which the two sides of the reflection layer (11) are the protective layer (12), and there is no medium layer (13) between the two adjacent protective layers (12), and only the first and last protective layers (12) are the medium layer (13); The thickness of the reflection layer (11) is 10nm-500nm; the thickness of the protective layer (12) is 10nm-500nm; and the thickness of the medium layer (13) is 10nm-10um; The reflection layer (11) is implemented by silver or indium tin oxide material; the protective layer (12) is implemented by tin oxide or silicon nitride material; and the medium layer (13) is implemented by silicon dioxide, tin oxide, zinc oxide or silicon nitride material.

2. The photonic crystal Low-E glass according to claim 1, characterized in that, The width of the structural unit (1) is 0.1mm-50mm.

3. The photonic crystal Low-E glass according to claim 2, characterized in that, Grooves are arranged between adjacent structural units (1); The groove width w is 1um-1mm.

4. The photonic crystal Low-E glass according to claim 3, characterized in that, The structural unit (1) is implemented in a triangular, quadrilateral or hexagonal shape.

5. The photonic crystal Low-E glass according to claim 4, characterized in that, The circumscribed size a of the quadrilateral is 2mm, the circumscribed size b is a×k, k is a proportionality coefficient, and k ranges from 0.1 to 1.

6. The photonic crystal Low-E glass according to claim 1, characterized in that, The thickness of the base glass is 0.01mm-50mm.

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