A thiocyanate-doped modified anti-perovskite material, a preparation method thereof and application thereof

The preparation method of anti-perovskite material modified by doping with thiocyanate has solved the problem of the material's limited application in solid-state batteries and optoelectronic materials, achieving high efficiency in optoelectronic performance and high conductivity, and expanding its application in solid-state lithium battery electrolytes.

CN120248891BActive Publication Date: 2026-02-03JINGGANGSHAN UNIVERSITY
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Patent Information

Application Number
CN202510401926.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-04-01
Publication Date
2026-02-03
Estimated Expiration
2045-04-01

AI Technical Summary

Technical Problem

The application of anti-perovskite materials in solid-state batteries and optoelectronic materials is not yet comprehensive.

Method used

A thiocyanate-doped modified anti-perovskite material with the general molecular formula Cs3Mn(SCN)nBr5-n is provided. It is prepared by heating and stirring the materials in a solvent in a specific ratio and then crystallizing to obtain a material with high electrical conductivity and high quantum luminescence efficiency.

Benefits of technology

It enables the widespread application of materials in the optoelectronic field and has broad application prospects as a solid electrolyte in solid-state lithium batteries. The quantum luminescence efficiency reaches 99.8% and the conductivity is high.

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Abstract

The application discloses a reverse perovskite material. Specifically, a thiocyanate doped modified reverse perovskite material, a preparation method and application thereof are provided. The reverse perovskite material has a quantum luminous efficiency of 99.8%, has a wide application prospect in the photoelectric field, and has a high conductivity, and has a wide application prospect in a solid-state electrolyte of a solid-state lithium battery.
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Claims

1. An anti-perovskite material, characterized in that, The molecular formula of the anti-perovskite material is Cs3Mn(SCN). n Br 5-n , where n is 0.

3.

2. A method for preparing an anti-perovskite material, characterized in that, It is prepared by the following method: (1) Mix the materials CsBr, MnBr2 and CsSCN according to the general molecular formula Cs3Mn(SCN). n Br 5-n Weigh out the ingredients according to a ratio of n = 0.

3. (2) Dissolve the weighed material in a solvent, heat and stir to obtain an anti-perovskite precursor solution; (3) The anti-perovskite precursor solution is heated and volatilized at 30-60°C to crystallize and precipitate, and then dried to obtain the anti-perovskite material.

3. The method for preparing the anti-perovskite material as described in claim 2, characterized in that, In step (2), the solvent is water and / or an alcohol solvent.

4. The method for preparing the anti-perovskite material as described in claim 3, characterized in that, In step (2), when the solvent is an alcohol solvent, the alcohol solvent is methanol and / or ethanol.

5. An application of the anti-perovskite material as described in claim 1 in the optoelectronic field.

Citation Information

Patent Citations

  • Lithium-enriched anti-perovskite sulfides, solid electrolyte material containing lithium-enriched anti-perovskite sulfides and application of solid electrolyte material

    CN104466239A

  • Continuous laser employing colloidal quantum dot and manufacturing method thereof

    WO2019080925A1