Wafer carrier and epitaxial equipment

Abstract

The present application discloses a wafer carrier device and epitaxial equipment thereof, wherein the wafer carrier device includes a base, a base plate, and a tray, wherein the base plate is formed with an annular groove, the annular groove is connected to the upper surface of the base plate, and the annular groove is connected to the side surface of the base plate, the tray is at least partially located in the annular groove and supported by the annular groove, the distance between the groove bottom surface of the annular groove and the lower surface of the base plate along the vertical direction of the wafer carrier device is a preset distance, the tray at least partially extends downward to form a surrounding portion, the upper end of the surrounding portion is flush with the groove bottom surface of the annular groove, the surrounding portion is at least partially arranged around the base plate, the ratio of the height H1 of the surrounding portion along the vertical direction of the wafer carrier device to the preset distance D1 ranges from 0.25 to 0.5, and the epitaxial equipment includes the above-mentioned wafer carrier device. Through the above-mentioned arrangement, the uniformity of the wafer temperature during the reaction process of the epitaxial equipment can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a wafer carrier and epitaxial equipment. Background Art

[0002] Epitaxial growth equipment is used to grow single-crystal thin films on wafers. These equipment types primarily include chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), and atomic layer deposition (ALD). CVD epitaxial growth equipment includes a reaction chamber, which is used for the reaction of feedstock gases. Inside the reaction chamber, a wafer carrier and a heating assembly are located. The heating assembly heats the wafer carrier, thereby indirectly controlling the wafer temperature through heat conduction. This maintains the wafer within the reaction temperature range of the feedstock gases. Following the heating reaction of the feedstock gases, a thin film is deposited on the wafer.

[0003] The wafer carrier includes a base plate and a tray. The base plate is used to support the wafer during the epitaxial reaction, and the tray is used to transport the wafer. During the epitaxial reaction, heat generated by the heating element is transferred to the base plate and tray, and then to the wafer through the base plate and tray. If the difference in heat transferred to the wafer from the base plate and tray is too large, it will cause a large temperature difference between the wafers during the epitaxial reaction.

[0004] In addition, since the reaction deposition efficiency of raw material gases on wafers at different temperatures is different, if there is a large temperature difference on the wafer during the reaction process of the epitaxial equipment, the thickness of the film deposited on the wafer will be uneven, resulting in poor uniformity of the film deposited by the epitaxial equipment.

[0005] Therefore, how to improve the uniformity of wafer temperature during the reaction process of epitaxial equipment is a technical problem that those skilled in the art urgently need to solve. Summary of the Invention

[0006] In order to address the deficiencies of the prior art, the purpose of the present application is to provide a wafer carrier and epitaxial equipment, wherein the wafer temperature has a high uniformity during the reaction process.

[0007] To achieve the above objectives, this application adopts the following technical solutions:

[0008] A wafer carrier device includes a base, a base plate, and a tray. The base plate is supported by the base plate and can rotate relative to the base plate, and the tray is supported by the base plate and at least partially arranged around the base plate. The base plate is formed with an annular groove, which is connected to the upper surface of the base plate and the side surface of the base plate. The tray is at least partially located in the annular groove and supported by the annular groove. The distance between the bottom surface of the annular groove and the lower surface of the base plate along the vertical direction of the wafer carrier device is a preset distance. The tray at least partially extends downward to form a surrounding portion, the upper end of the surrounding portion is flush with the bottom surface of the annular groove, the surrounding portion is at least partially arranged around the base plate, and the ratio of the height H1 of the surrounding portion along the vertical direction of the wafer carrier device to the preset distance D1 ranges from 0.25 to 0.5.

[0009] Furthermore, the tray at least partially extends away from the base plate to form an annular extension portion, and the ratio of the height H2 of the annular extension portion along the vertical direction of the wafer carrier to the preset distance D1 is in a range of 0.2 to 0.5.

[0010] Furthermore, the tray has a carrying surface for carrying the wafer, and the height of the carrying surface is lower than the height of the upper surface of the base.

[0011] Furthermore, a height difference ΔH between the bearing surface and the upper surface of the base plate ranges from 0.1 mm to 0.3 mm.

[0012] Furthermore, the tray includes an abutment portion located in the annular groove, the lower surface of the abutment portion contacts the bottom surface of the annular groove, and the abutment portion is provided with at least one first insulation groove, the opening of the first insulation groove is located on the lower surface of the abutment portion.

[0013] Furthermore, the tray is provided with a second heat-insulating groove, and the opening of the second heat-insulating groove is located on the upper surface of the tray.

[0014] Furthermore, the distance between the abutment portion and the inner diameter side wall of the annular groove is a preset gap D2, the inner diameter of the annular groove is smaller than the diameter of the wafer, and the difference between the inner diameter of the annular groove and the diameter of the wafer is defined as a preset difference, and the preset gap D2 does not exceed one-fourth of the preset difference.

[0015] Furthermore, the tray at least partially extends upward to form an annular protrusion, which is surrounded by a accommodating space for accommodating the wafer. The inner radius of the annular protrusion is larger than the radius of the wafer, and the difference between the inner radius of the annular protrusion and the radius of the wafer is in the range of 1 mm to 2 mm.

[0016] Furthermore, the height H1 of the surrounding portion along the vertical direction of the wafer carrier is greater than the height H2 of the annular extension portion along the vertical direction of the wafer carrier. The tray includes an abutment portion located within the annular groove, and the height H1 of the surrounding portion along the vertical direction of the wafer carrier is greater than the height H3 of the abutment portion along the vertical direction of the wafer carrier.

[0017] To achieve the above objectives, this application adopts the following technical solutions:

[0018] An epitaxial device comprises a reaction chamber and the above-mentioned wafer carrying device arranged inside the reaction chamber.

[0019] The above-mentioned wafer carrier and epitaxial equipment can reduce the tray temperature, thereby reducing the temperature transmitted from the tray to the edge of the wafer, which is beneficial to improving the uniformity of the wafer temperature during the reaction process of the epitaxial equipment, thereby improving the uniformity of the thin film deposited on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a schematic structural diagram of a wafer carrier device according to an embodiment of the present application;

[0021] Figure 2 A schematic cross-sectional view of a wafer carrier device according to an embodiment of the present application;

[0022] Figure 3 A schematic diagram of the temperature of a wafer in a wafer carrier device according to an embodiment of the present application;

[0023] Figure 4 for Figure 2 A magnified schematic diagram of point A in the middle;

[0024] Figure 5 This is a schematic diagram of the combination of a wafer carrier, epitaxial equipment and wafer according to an embodiment of the present application.

[0025] Among them, 100, wafer carrying device; 11, base; 111, rotating shaft with air channel; 1111, air inlet; 1112, air inlet; 1113, air outlet; 12, base; 121, annular groove; 13, tray; 131, surrounding part; 132, annular extension part; 133, carrying surface; 134, abutment part; 1341, first thermal insulation groove; 135, annular protrusion; 1351, accommodating space; 136, second thermal insulation groove; 14, gap; 15, airflow gap; 200, wafer; 300, epitaxial equipment; 31, upper cover; 32, cavity side wall; 33, bottom plate; 34, automation component; 35, reaction chamber; 36, heating component. DETAILED DESCRIPTION

[0026] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation of the present application will be clearly and completely described below in conjunction with the drawings in the implementation of the present application.

[0027] It should be noted that the words "first", "second" and similar terms used in the specification and claims of this application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "an" do not indicate a quantity limitation, but rather indicate the presence of at least one. "Multiple" or "several" means at least two. Unless otherwise specified, words such as "front", "back", "left", "right", "bottom" and / or "top" are used for ease of description only and are not limited to one position or one spatial orientation. Words such as "include" or "comprising" and similar terms mean that the elements or objects appearing before "include" or "comprising" include the elements or objects listed after "include" or "comprising" and their equivalents, and do not exclude other elements or objects. Words such as "connected" or "connected" and similar terms are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect.

[0028] As used in this specification and the appended claims, the singular forms "a," "an," "said," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0029] like Figure 1 and Figure 2 As shown, the present application provides a wafer carrier 100, which includes a base 11, a base plate 12, and a tray 13. The base 11 serves as the basic framework of the wafer carrier 100 and is used to support the base plate 12 and the tray 13. The base plate 12 is used to support the wafer 200 during the reaction process. The tray 13 is used to support the wafer 200 when the wafer 200 is transported.

[0030] In order to clearly illustrate the technical solution of this application, the following is also defined: Figure 2 As shown above and below.

[0031] Specifically, the susceptor 12 is supported by the base 11 and can rotate relative to the base 11 , so that the wafer 200 on the susceptor 12 can rotate during the reaction process, thereby improving the uniformity of the thin film deposited on the wafer 200 .

[0032] More specifically, the tray 13 is supported by the base plate 12 and is at least partially arranged around the base plate 12. This arrangement allows the tray 13 to surround the wafer 200, which facilitates the tray 13 to carry the wafer 200 and drive the wafer 200 to move, thereby achieving the transportation of the wafer 200.

[0033] It should be noted that in the embodiment of the present application, the susceptor 11 can be directly heated, and the heat is transferred to the base plate 12 and the tray 13 through the susceptor 11. Moreover, in the present application, the heat of the base plate 12 is basically transferred to the center of the wafer 200, and the heat of the tray 13 is basically transferred to the edge of the wafer 200.

[0034] More specifically, the base 12 is formed with an annular groove 121, which communicates with the upper surface of the base 12 and the side surface of the base 12. Specifically, the tray 13 is at least partially located within the annular groove 121 and supported by the annular groove 121. This arrangement allows the base 12 to support the tray 13 via the annular groove 121.

[0035] Exemplarily, the tray 13 is arranged in a major arc, and the tray 13 is placed on the annular groove 121 , so that the base plate 12 can support the tray 13 .

[0036] Exemplarily, the tray 13 is in a closed ring shape, and the tray 13 is placed on the annular groove 121 so that the base plate 12 can support the tray 13 .

[0037] In this embodiment, the tray 13 includes an abutment portion 134 disposed around the base 12. The abutment portion 134 is used to abut the tray 13 against the base 12. Specifically, the abutment portion 134 is located within the annular groove 121, and the lower surface of the abutment portion 134 contacts the bottom surface of the annular groove 121, so that the base 12 supports the tray 13 via the abutment portion 134.

[0038] More specifically, the tray 13 at least partially extends downward to form a surrounding portion 131, which at least partially surrounds the base plate 12. This arrangement facilitates the insertion of the tray 13 onto the base plate 12 through the surrounding portion 131. Furthermore, this insertion connection method is more convenient than other connection methods, thereby facilitating easier installation of the tray 13 and base plate 12, and further facilitating quick assembly and disassembly of the tray 13 and base plate 12, thereby facilitating quick assembly and disassembly of the wafers 200 between wafer carriers 100.

[0039] In this embodiment, the distance between the bottom surface of the annular groove 121 and the lower surface of the base plate 12 along the vertical direction of the wafer carrier 100 is defined as a preset distance D1. The ratio of the height H1 of the surrounding portion 131 along the vertical direction of the wafer carrier 100 to the preset distance D1 ranges from 0.25 to 0.5. It should be noted that the surrounding portion 131 and the abutting portion 134 are integrally formed, and the upper end of the surrounding portion 131 and the lower end of the abutting portion 134 are integrally formed. The upper end of the surrounding portion 131 is flush with the bottom surface of the annular groove 121.

[0040] Specifically, the ratio of the height H1 of the surrounding portion 131 along the vertical direction of the wafer carrier 100 to the preset distance D1 ranges from 0.3 to 0.45. More specifically, the ratio of the height H1 of the surrounding portion 131 along the vertical direction of the wafer carrier 100 to the preset distance D1 ranges from 0.36 to 0.4. Through the above-mentioned arrangement, a gap 14 can be formed between the surrounding portion 131 and the base 11, and floating gas can flow in the gap 14. Since the thermal conductivity of the gas is relatively low, the heat conducted from the base 11 to the tray 13 can be reduced, which is beneficial to lowering the temperature of the tray 13, and further, the heat conducted from the tray 13 to the edge of the wafer 200 can be reduced, thereby lowering the temperature of the edge of the wafer 200, avoiding the temperature of the edge of the wafer 200 being too high, resulting in excessive temperature differences in the wafer 200, and improving the temperature uniformity of the wafer 200 during the reaction process of the epitaxial device 300, thereby improving the uniformity of the thin film deposited by the epitaxial device 300.

[0041] It should be noted that in the present application, the thermal conductivity performance of the tray 13 is greater than that of the base 12, so the heat conducted to the edge of the wafer 200 through the tray 13 is greater than the heat conducted to the center of the wafer 200 through the base 12. Therefore, the present application reduces the heat of the tray 13 to reduce the heat conducted to the edge of the wafer 200 by the tray 13, thereby improving the temperature uniformity of the wafer 200.

[0042] It should be noted that the wafer carrier 100 of the embodiment of the present application is an air flotation device, that is, the base 11, the base plate 12 and the tray 13 are filled with floating gas, so that the base plate 12 and the tray 13 can float on the base 11, and an air flow gap 15 for circulating the floating gas is formed between the tray 13 and the base 11. Among them, the gap 14 is connected to the air flow gap 15, so that the gap 14 can be filled with floating gas, and because the thermal conductivity of the gas is relatively low, the present application forms a gap 14 between the surrounding portion 131 and the base 11 to reduce the heat conducted from the base 11 to the tray 13, thereby helping to reduce the temperature of the tray 13, and to reduce the heat conducted from the tray 13 to the edge of the wafer 200, which is conducive to improving the temperature uniformity of the wafer 200.

[0043] Secondly, through the above-mentioned setting, it is possible to avoid the ratio of the height H1 to the preset distance D1 being too large, which would cause the height of the surrounding portion 131 relative to the base 11 to be too small, thereby avoiding the height being too small and causing the gap 14 to be too small, and further avoiding the gap 14 being too small and causing too little floating gas between the base 11 and the tray 13, so as to avoid the floating gas between the base 11 and the tray 13 being unable to meet the temperature requirement of lowering the tray 13, so as to help reduce the temperature difference between the tray 13 and the base plate 12, and then help improve the uniformity of the thin film deposited on the wafer 200.

[0044] In addition, it is also possible to avoid the ratio of the height H1 to the preset distance D1 being too small, which would result in the surrounding portion 131 being too small, thereby avoiding the surrounding portion 131 being too small, which would result in a reduction in the stability of the tray 13 mounted on the base 12, thereby facilitating the improvement of the connection stability between the tray 13 and the base 12, thereby improving the stability of the wafer 200 during the reaction process.

[0045] It should be noted that the float gas in the embodiments of this application is composed of one or more of argon and helium. As will be appreciated, the chemical stability of argon and helium prevents the float gas from reacting with the raw gas used to make the thin film, thereby improving the purity of the thin film. Furthermore, the float gas may also be other gases that do not react with the raw gas used to make the thin film, and this application does not limit this.

[0046] like Figure 3 As shown, as an embodiment, when a wafer carrier 100 provided with a gap 14 and a wafer carrier without a gap 14 react in an epitaxial device 300, the temperature of the wafer 200 on the wafer carrier 100 provided with a gap 14 and the temperature of the wafer on the wafer carrier without a gap 14 are detected. Any diameter of the wafer is defined as the detection diameter, and the horizontal axis is the detection position set along the detection diameter. The vertical axis is the temperature of the wafer at the detection position at any reaction moment. Among them, the solid line segment in the coordinate is the fitting line segment of the wafer temperature of the wafer carrier without an airflow gap as the detection position changes, and the dotted line segment in the coordinate is the fitting line segment of the wafer 200 temperature of the wafer carrier 100 provided with a gap 14 as the detection position changes. △T1 is the difference between the highest and lowest values of the wafer temperature of the wafer carrier without a gap 14, and △T2 is the difference between the highest and lowest values of the wafer 200 temperature of the wafer carrier 100 provided with a gap 14. Among them, △T2 is smaller than △T1. It can be understood from Figure 3 It can be seen that by setting the gap 14, the difference between the highest and lowest temperature values on the wafer 200 can be effectively reduced, thereby reducing the temperature difference on the wafer 200, so that the temperature of the wafer 200 is more uniform during the reaction process of the epitaxial equipment 300, which is beneficial to improving the uniformity of the deposited film on the wafer 200.

[0047] like Figure 2As shown, as an embodiment, the tray 13 at least partially extends away from the base plate 12 to form an annular extension 132, which can be used to provide support when transporting the tray 13. The ratio of the height H2 of the annular extension 132 along the vertical direction of the wafer carrier 100 to the preset distance D1 ranges from 0.25 to 0.5. Specifically, the ratio of the height H2 of the annular extension 132 along the vertical direction of the wafer carrier 100 to the preset distance D1 ranges from 0.3 to 0.45. More specifically, the ratio of the height H2 of the annular extension 132 along the vertical direction of the wafer carrier 100 to the preset distance D1 ranges from 0.36 to 0.4. Such a setting can avoid the ratio of the height H2 to the preset distance D1 being too small, which would cause the annular extension portion 132 to be too thin, so as to avoid the structural strength of the annular extension portion 132 being too low, which would reduce the stability when transporting the pallet 13, and to avoid the pallet 13 falling during transportation and causing damage to the wafer carrier 100, which is beneficial to improving the service life of the wafer carrier 100.

[0048] Secondly, it can also avoid the annular extension portion 132 from being too weak in strength and causing cracking and damage during the heating process, thereby facilitating the improvement of the service life of the tray 13 .

[0049] In addition, it is also possible to avoid the ratio of the height H2 to the preset distance D1 being too large, which would cause the height of the annular extension 132 to be too low relative to the base 11, so as to avoid the annular extension 132 interfering with the gap 14 and causing the gap 14 to be too small, thereby avoiding the height being too small and causing the gap 14 to be too small, and then avoiding the gap 14 being too small and causing too little floating gas between the base 11 and the tray 13, so as to avoid the floating gas between the base 11 and the tray 13 being unable to meet the temperature requirement of lowering the tray 13, so as to help reduce the temperature difference between the tray 13 and the base plate 12, and then help improve the uniformity of the thin film deposited on the wafer 200.

[0050] like Figure 4 As shown, as an embodiment, the tray 13 includes a carrying surface 133 for carrying the wafer 200 during transport. Furthermore, the upper surface of the base plate 12 is used to support the wafer 200 during reaction. In this embodiment, the carrying surface 133 is used to support the edge of the wafer 200, while the upper surface of the base plate 12 is used to support the portion of the wafer 200 other than the edge.

[0051] Specifically, along the vertical direction of the wafer carrier 100, the height of the carrier surface 133 is lower than the height of the upper surface of the base 12. With this arrangement, when the wafer 200 is placed on the upper surface of the base 12, a gap is created between the base 12 and the carrier surface 133. This gap allows for deformation of the wafer 200, thereby preventing deformation of the wafer 200 due to a lack of deformation space. This prevents interference between the wafer 200 and the carrier surface 133, which could cause the wafer 200 to tilt, and thus prevents uneven deposition of thin film on the tilted wafer 200, which could result in waste of thin film.

[0052] It should be noted that during the reaction of the epitaxial device 300, the edge of the wafer 200 will expand and deform after being heated. Therefore, by reserving deformation space, the wafer 200 can be prevented from tilting after deformation, thereby avoiding waste of the film and improving the utilization rate of the film.

[0053] As an optional implementation, the height difference ΔH between the carrying surface 133 and the upper surface of the base 12 ranges from 0.1mm to 0.3mm. Specifically, the height difference ΔH between the carrying surface 133 and the upper surface of the base 12 ranges from 0.12mm to 0.27mm. More specifically, the height difference ΔH between the carrying surface 133 and the upper surface of the base 12 ranges from 0.14mm to 0.2mm. This configuration can prevent the height difference ΔH from being too large, which could result in an excessively large reserved deformation space. This prevents the wafer 200 from being excessively deformed due to a lack of constraints on its deformation within the excessively large deformation space, which could lead to excessive deformation of the wafer 200. This also prevents uneven deposition of the film on an excessively deformed wafer 200, which could lead to waste of the film, thereby improving film utilization. Furthermore, this configuration can prevent the height difference ΔH from being too small, which could result in an excessively small reserved deformation space. This prevents the deformation of the wafer 200 from exceeding the volume of the deformation space, which could lead to tilting of the wafer 200 after deformation, thereby improving film utilization.

[0054] In addition, by setting a height difference ΔH between the carrying surface 133 and the upper surface of the base 12, the wafer 200 on the base 12 can be prevented from directly contacting the carrying surface 133, which would cause excessive heat to be transferred from the carrying surface 133 to the wafer 200, thereby preventing the edge temperature of the wafer 200 from being too high, which would cause the wafer 200 to be warped and damaged, thereby improving the service life of the wafer 200.

[0055] As an embodiment, the abutting portion 134 is provided with a first thermal insulation groove 1341, and at least one first thermal insulation groove 1341 is provided. Specifically, the opening of the first thermal insulation groove 1341 is located on the lower surface of the abutting portion 134. With such a configuration, the contact area between the tray 13 and the base 12 can be reduced by the first thermal insulation groove 1341, and the first thermal insulation groove 1341 can be filled with floating gas, thereby reducing the thermal conductivity between the base 12 and the susceptor 11. When the tray 13 receives heat from the susceptor 11, the tray 13 is prevented from receiving too much heat from the base 12, which would cause the temperature of the tray 13 to be too high. This is beneficial for reducing the temperature of the tray 13, thereby improving the temperature uniformity of the wafer 200 during the reaction process.

[0056] like Figure 2 As shown, as an embodiment, the tray 13 is provided with a second thermal insulation groove 136 , the opening of which is located on the upper surface of the tray 13 . There is at least one second thermal insulation groove 136 . This arrangement increases the contact area between the tray 13 and the floating gas, thereby improving the heat exchange efficiency between the tray 13 and the floating gas. This helps lower the temperature of the tray 13 , further improving the temperature uniformity of the wafers 200 during the reaction process, and thereby improving the uniformity of the thin film deposited on the wafers 200 .

[0057] As an embodiment, the inner diameter of the annular groove 121 is smaller than the diameter of the wafer 200, so that the edge of the wafer 200 can exceed the annular groove 121, thereby facilitating the support surface 133 to support the part of the wafer 200 that exceeds the annular groove 121, and further facilitating the transportation of the wafer 200 by the tray 13.

[0058] Specifically, the distance between the abutment portion 134 and the inner diameter sidewall of the annular groove 121 is defined as a preset gap D2, and the difference between the inner diameter of the annular groove 121 and the diameter of the wafer 200 is a preset difference. The width of the preset gap D2 along the radial direction of the annular groove 121 ranges from 1 mm to 2 mm. Specifically, the width of the preset gap D2 ranges from 1.3 mm to 1.8 mm. More specifically, the width of the preset gap D2 ranges from 1.4 mm to 1.6 mm. This arrangement can prevent the preset gap D2 from being too large, which would cause the distance between the abutment portion 134 and the annular groove 121 to be too large, thereby preventing the upper end surface of the abutment portion 134 (i.e., the supporting surface 133) from being unable to support the edge of the wafer 200, which would result in the wafer 200 being unable to be picked up and transported, thereby facilitating improved convenience in picking up the wafer 200 of the wafer carrier 100. In addition, it is also possible to avoid the preset gap D2 being too small, which would cause the distance between the abutment 134 and the annular groove 121 to be too small, thereby avoiding too fast heat conduction from the base 12 to the tray 13 through the annular groove 121 and the abutment 134, so that when the tray 13 is subjected to heat conduction from the base 11, it is avoided that the tray 13 is subjected to too much heat from the base 12 and causes the temperature of the tray 13 to be too high, which is beneficial to improving the temperature uniformity of the wafer 200 during the reaction process, so as to improve the uniformity of the thin film deposited on the wafer 200.

[0059] In this embodiment, the preset gap D2 does not exceed one-quarter of the preset difference. This configuration can avoid the tray 13 being unable to support and lift the wafer 200 due to the carrying surface 133 being too small, thereby facilitating the transport of the wafer 200 via the tray 13.

[0060] like Figure 2 As shown, as an embodiment, the tray 13 at least partially extends upward to form an annular protrusion 135 , and the annular protrusion 135 is surrounded by a receiving space 1351 , which is used to receive the wafer 200 so that the tray 13 can carry the wafer 200 .

[0061] It should be noted that the annular protrusion 135 and the annular extension 132 are an integrally formed structure.

[0062] In this embodiment, the inner radius of the annular protrusion 135 is greater than the radius of the wafer 200 to avoid interference between the annular protrusion 135 and the wafer 200, thereby facilitating the placement of the wafer 200 in the accommodation space 1351. The difference between the inner radius of the annular protrusion 135 and the radius of the wafer 200 is in the range of 1 mm to 2 mm. Specifically, the difference between the inner radius of the annular protrusion 135 and the radius of the wafer 200 is in the range of 1.2 mm to 1.8 mm. More specifically, the difference between the inner radius of the annular protrusion 135 and the radius of the wafer 200 is in the range of 1.4 mm to 1.6 mm. Such a setting can avoid the above-mentioned difference being too small, which would cause the distance between the annular protrusion 135 and the wafer 200 to be too small, thereby avoiding the heat conduction performance of the tray 13 to the wafer 200 through the annular protrusion 135 being too high, so as to avoid the edge temperature of the wafer 200 being too high, which is beneficial to reducing the temperature difference between the edge and center of the wafer 200, so as to improve the uniformity of the thin film deposited on the wafer 200.

[0063] In addition, it is possible to avoid the difference between the inner radius of the annular protrusion 135 and the radius of the wafer 200 being too large, which would cause the distance between the annular protrusion 135 and the wafer 200 to be too large, thereby avoiding the space of the accommodating space 1351 being too large, which would cause the wafer 200 to be easily offset in the accommodating space 1351, thereby avoiding the wafer 200 being offset and causing the supporting surface 133 to be unable to support the wafer 200, thereby avoiding the tray 13 from being unable to lift the wafer 200, which is conducive to the tray 13 carrying the wafer 200.

[0064] As an embodiment, the height H1 of the surrounding portion 131 along the vertical direction of the wafer carrier 100 is greater than the height H2 of the annular extension portion 132 along the vertical direction of the wafer carrier 100. This configuration ensures that the structural strength of the surrounding portion 131 is greater than that of the annular extension portion 132, thereby making the deformation resistance of the annular extension portion 132 less than that of the surrounding portion 131. Therefore, when the epitaxial device 300 is in operation and the tray 13 is heated, the annular extension portion 132 is more likely to deform than the surrounding portion 131 to offset the overall deformation of the tray 13, thereby preventing the surrounding portion 131 from being deformed due to heat and thus being unable to fit onto the base plate 12, thereby facilitating the improvement of the service life of the tray 13.

[0065] In this embodiment, the height H1 of the surrounding portion 131 along the vertical direction of the wafer carrier 100 is greater than the height H3 of the contact portion 134 along the vertical direction of the wafer carrier 100. This configuration ensures that the contact portion 134 has a lower deformation resistance than the surrounding portion 131. Therefore, when the tray 13 is heated, the contact portion 134 is more likely to deform than the surrounding portion 131 to offset the overall deformation of the tray 13. This prevents the surrounding portion 131 from being deformed due to heat and thus preventing it from being unable to fit onto the base plate 12, thereby improving the service life of the tray 13.

[0066] like Figure 5 As shown, as an embodiment, the present application also provides an epitaxial device 300, which includes an upper cover 31, a cavity side wall 32, a bottom plate 33, an automation component 34 and a wafer carrier 100. Among them, the upper cover 31, the cavity side wall 32 and the bottom plate 33 are surrounded by a reaction chamber 35, and the raw material gas can be introduced into the reaction chamber 35 to produce a thin film. The wafer carrier 100 is located in the reaction chamber 35, and the wafer carrier 100 is used to receive the deposited thin film. The automation component 34 can pick up the tray 13 so that the automation component 34 can transport the wafer 200. Exemplarily, the automation component 34 can be a robotic arm, which clamps and moves the tray 13 through the robotic arm so that the wafer 200 placed on the carrying surface 133 can be transported, which is beneficial to the collection of the thin film.

[0067] As an embodiment, the epitaxial growth apparatus 300 includes a heating assembly 36 located within the reaction chamber 35. The heating assembly 36 is used to heat and maintain the temperature of the reaction environment within the epitaxial growth apparatus 300. The heating assembly 36 is capable of controlling the temperature of the reaction environment so that the temperature of the reaction environment is adapted to the reaction temperature of the feedstock gas. Furthermore, in this embodiment, the heating assembly 36 is located below the susceptor 11 along the vertical direction of the wafer carrier 100, so that the heating assembly 36 can heat the susceptor 11 and transfer heat through the susceptor 11 to the base plate 12 and the tray 13.

[0068] As an embodiment, cooling channels (not shown) are provided within the upper cover 31, the chamber sidewalls 32, and the bottom plate 33. Cooling water flows through the cooling channels. The cooling water exchanges heat with the reaction chamber 35, preventing excessive temperatures within the reaction chamber 35 from causing the raw material gas to fail to react, thereby improving the utilization rate of the raw material gas.

[0069] As an embodiment, the base 11 is provided with a rotating shaft 111 with an air passage, which is rotatably connected to the bottom plate 33. Specifically, an air inlet 1111 is provided within the rotating shaft 111 with an air passage, and the air inlet 1111 includes an air inlet 1112 and an air outlet 1113. The air inlet 1112 is connected to the outside of the reaction chamber 35, so that floating gas enters the air inlet 1111 through the air inlet 1112 and drives the rotating shaft 111 with an air passage to rotate, thereby driving the base 11 to rotate. The air outlet 1113 is provided on the upper surface of the base 11, so that the floating gas is discharged from the air outlet 1113 and fills the air flow gap 15. At the same time, the floating gas can cause the base plate 12 and the tray 13 to float on the upper surface of the base 11.

[0070] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all such improvements and changes should fall within the scope of protection of the claims appended to this application.

Claims

1. A wafer carrying device (100), characterized in that: include: base (11); A base plate (12), the base plate (12) being supported by the base (11) and capable of rotating relative to the base (11); a tray (13), the tray (13) being supported by the base plate (12) and at least partially disposed around the base plate (12); The base plate (12) is formed with an annular groove (121), the annular groove (121) is communicated with the upper surface of the base plate (12), and the annular groove (121) is communicated with the side surface of the base plate (12), the tray (13) is at least partially located in the annular groove (121) and supported by the annular groove (121), and the distance between the groove bottom surface of the annular groove (121) and the lower surface of the base plate (12) along the vertical direction of the wafer carrying device (100) is a preset distance; The tray (13) at least partially extends downward to form a surrounding portion (131), the upper end of the surrounding portion (131) is flush with the bottom surface of the annular groove (121), the surrounding portion (131) is arranged around the base plate (12), and the ratio of the height H1 of the surrounding portion (131) along the vertical direction of the wafer carrier (100) to the preset distance D1 is in the range of 0.25 to 0.

5.

2. The wafer carrier (100) according to claim 1, characterized in that: The tray (13) at least partially extends in a direction away from the base plate (12) to form an annular extension portion (132), and the ratio of the height H2 of the annular extension portion (132) in the vertical direction of the wafer carrier (100) to the preset distance D1 is in a range of 0.2 to 0.

5.

3. The wafer carrying device (100) according to claim 1, characterized in that: The tray (13) has a carrying surface (133) for carrying wafers, and the height of the carrying surface (133) is lower than the height of the upper surface of the base plate (12).

4. The wafer carrying device (100) according to claim 3, characterized in that: The height difference ΔH between the bearing surface (133) and the upper surface of the base plate (12) ranges from 0.1 mm to 0.3 mm.

5. The wafer carrying device (100) according to any one of claims 1 to 4, characterized in that: The tray (13) includes an abutment portion (134) located in the annular groove (121), the lower surface of the abutment portion (134) contacts the bottom surface of the annular groove (121), and the abutment portion (134) is provided with at least one first heat insulation groove (1341), the opening of the first heat insulation groove (1341) is located on the lower surface of the abutment portion (134).

6. The wafer carrying device (100) according to claim 5, characterized in that: The tray (13) is provided with a second heat-insulating groove, and the opening of the second heat-insulating groove is located on the upper surface of the tray (13).

7. The wafer carrying device (100) according to claim 5, characterized in that: The distance between the abutment portion (134) and the inner diameter side wall of the annular groove (121) is a preset gap D2, the inner diameter of the annular groove (121) is smaller than the diameter of the wafer, and the difference between the inner diameter of the annular groove (121) and the diameter of the wafer is defined as a preset difference, and the preset gap D2 does not exceed one quarter of the preset difference.

8. The wafer carrying device (100) according to any one of claims 1 to 4, characterized in that: The tray (13) at least partially extends upward to form an annular protrusion (135), and the annular protrusion (135) is surrounded by a receiving space for receiving a wafer. The inner radius of the annular protrusion (135) is greater than the radius of the wafer, and the difference between the inner radius of the annular protrusion (135) and the radius of the wafer is in the range of 1 mm to 2 mm.

9. The wafer carrying device (100) according to claim 2, characterized in that: A height H1 of the surrounding portion (131) along the upper and lower directions of the wafer carrier (100) is greater than a height H2 of the annular extension portion (132) along the upper and lower directions of the wafer carrier (100); The tray (13) includes an abutment portion (134) located in the annular groove (121), and a height H1 of the surrounding portion (131) in the vertical direction of the wafer carrier (100) is greater than a height H3 of the abutment portion (134) in the vertical direction of the wafer carrier (100).

10. An epitaxial device (300), characterized in that: include: A reaction chamber and a wafer carrying device (100) according to any one of claims 1 to 9, arranged inside the reaction chamber.

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