A perovskite film laser cutting positioning method

Abstract

The invention discloses a perovskite film laser cutting positioning method, which relates to the field of laser cutting positioning technology. The method comprises the following steps: flattening a perovskite film sample on a laser cutting platform; scanning the surface of an uncut perovskite film using a spectrometer, recording the spectral reflectivity distribution of each area, and generating a spectral characteristic reference map of the uncut perovskite film based on the spectral reflectivity data; starting a laser cutter to cut the perovskite film, and collecting spectral reflectivity data of the cut area and its surrounding area on the surface of the perovskite film using a spectrometer; comparing and calculating the spectral reflectivity data with the spectral characteristic reference map, identifying the spectral difference between the cut area and the uncut area, and generating a spectral difference map; calculating the offset of the laser cutter, and dynamically adjusting the cutting path according to the offset; performing quality inspection after cutting is completed, outputting a final perovskite film sample and cutting data, and scanning the perovskite film surface again after cutting is completed.

Description

Technical Field

[0001] The present invention relates to the technical field of laser cutting positioning, in particular to a perovskite film laser cutting positioning method. Background Art

[0002] As a new type of optoelectronic functional material, perovskite material has been widely used in the fields of solar cells, photodetectors and light-emitting diodes due to its excellent optoelectronic properties and low-cost preparation process. Among them, the photoelectric conversion efficiency of perovskite solar cells has rapidly increased from about 3.8% to more than 25% in the past decade, approaching the efficiency limit of crystalline silicon solar cells. As the core functional layer, the preparation quality of perovskite film directly determines the performance of the device. In the process of large-area preparation and device packaging, perovskite film cutting is a key step to achieve industrial application. Laser cutting technology has become the mainstream technology due to its high precision, non-contact nature and adaptability to a variety of materials. However, due to the complex optical properties of perovskite film itself, it is easily affected by laser energy distribution, uneven thickness of perovskite film and processing path deviation during the laser cutting process, resulting in unstable cutting quality or even functional failure. These problems seriously limit the large-scale application of perovskite materials and device production.

[0003] Existing perovskite film laser cutting technology usually relies on mechanical positioning and preset paths for operation, but lacks real-time feedback and dynamic adjustment capabilities for changes in the optical properties of perovskite films. This traditional method has multiple problems, such as the cutting accuracy is difficult to match the optical properties of the perovskite film, which easily causes the cutting area to shift; the spectral changes during the cutting process are not monitored in real time, making it difficult to identify quality problems at the cutting edge; and after the cutting is completed, it only relies on microscopic images or geometric parameter detection, making it difficult to efficiently evaluate the performance of the perovskite film. In the processing of large-area perovskite films, the unevenness of the optical properties of the perovskite film and the complexity of the material behavior further aggravate the difficulty of cutting accuracy control, thereby reducing the utilization rate of the perovskite film and the device yield, and limiting the industrial development of perovskite technology. Summary of the Invention

[0004] In view of the above existing problems, the present invention is proposed.

[0005] Therefore, the present invention provides a perovskite film laser cutting positioning method to solve the problem that the existing perovskite film laser cutting technology usually relies on mechanical positioning and preset paths for operation, but lacks real-time feedback and dynamic adjustment capabilities for changes in the optical properties of the perovskite film.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0007] In a first aspect, the present invention provides a perovskite film laser cutting positioning method, which comprises flattening a perovskite film sample on a laser cutting platform;

[0008] Scan the surface of the uncut perovskite film using a spectrometer, record the spectral reflectance distribution of each area, and generate a spectral characteristic reference map of the uncut perovskite film based on the spectral reflectance data;

[0009] Start the laser cutter to cut the perovskite film, and use the spectrometer to collect spectral reflectance data of the cut area and its surrounding area on the surface of the perovskite film;

[0010] Compare and calculate the spectral reflectance data with the spectral characteristic reference map, identify the spectral difference between the cut area and the uncut area, and generate a spectral difference map;

[0011] According to the spectral difference map, the offset of the laser cutter is calculated, and the cutting path is dynamically adjusted according to the offset;

[0012] After cutting, quality inspection is performed, and the final perovskite film sample and cutting data are output. After cutting, the perovskite film surface is scanned again to generate the final spectral reflectance data;

[0013] Compare the final spectral reflectance data with the spectral reference reflectance value to confirm whether the cutting area completely covers the target path. If cutting deviation occurs, restart the equipment for additional cutting.

[0014] As a preferred solution of the laser cutting positioning method of the perovskite film of the present invention, wherein: the perovskite film sample is fixed flat on the laser cutting platform, and the specific steps are:

[0015] The perovskite film is firmly adsorbed on the platform using electrostatic adsorption fixation;

[0016] Calculate the electrostatic adsorption force between the perovskite film and the control platform surface to determine whether the perovskite film is firmly adsorbed;

[0017] Set the adsorption force threshold. When the adsorption force is insufficient, readjust the potential difference and contact area.

[0018] Use an optical microscope to verify whether the laser focus is located in the center layer of the perovskite film surface;

[0019] When the distance from the laser focus to the fixed platform of the perovskite film Equal to the thickness of the perovskite film When , it means that the laser focus is on the surface of the perovskite film;

[0020] When the distance from the laser focus to the fixed platform of the perovskite film Greater or less than the thickness of the perovskite film , it means the laser focus is offset and the focal length parameters need to be readjusted.

[0021] As a preferred embodiment of the laser cutting positioning method for the perovskite film of the present invention, the method comprises the following steps: scanning the surface of the uncut perovskite film using a spectrometer, recording the spectral reflectivity distribution of each area, and generating a spectral characteristic reference map of the uncut perovskite film based on the spectral reflectivity data.

[0022] The surface of the perovskite film is divided into The grid area, and Represents the number of grid areas on the surface of the perovskite film in the horizontal and vertical directions, respectively. Each grid area corresponds to a sampling point, and the spectral reflectance of each sampling point is , indicating the wavelength is When the sampling point on the surface of the perovskite film The spectral reflectance of The horizontal and vertical coordinates of the corresponding sampling points in space;

[0023] The spectral reflectance distribution of each sampling point is integrated to calculate its normalized spectral reflectance. The spectral reflectance formula is: ;

[0024] in, Indicates the sampling point after normalization The spectral reflectance, represents the shortest wavelength, represents the longest wavelength, Indicates wavelength The weight function under Represents integral Small changes in

[0025] The normalized spectral reflectance The data were mapped into a two-dimensional matrix to generate a baseline map of the spectral characteristics of the uncut perovskite film;

[0026] The collected spectral reflectance data and reference map are stored as a two-dimensional matrix file.

[0027] As a preferred solution of the laser cutting positioning method of the perovskite film of the present invention, wherein: the laser cutter is started to cut the perovskite film, and the spectrometer is used to collect the spectral reflectance data of the cut area and its surrounding area on the surface of the perovskite film, the specific steps are as follows:

[0028] The laser cutter starts cutting according to the preset target path.

[0029] During cutting, the spectrometer continuously collects spectral reflectance data of the cutting area and its surroundings, and records the spectral reflectance curve of each sampling point as it changes with time.

[0030] As a preferred solution of the perovskite thin film laser cutting positioning method of the present invention, wherein: the spectral reflectance data is compared and calculated with the spectral characteristic reference map, the spectral difference between the cut area and the uncut area is identified, and the spectral difference map is generated. The specific steps are:

[0031] Calculate the change of spectral reflectance of each sampling point over time and obtain the spectral reflectance change rate, which is expressed as: ;

[0032] in, Indicates sampling point In time The spectral reflectance change rate after normalization is Indicates sampling point The spectral reference reflectance value on the surface of the uncut perovskite film, Indicated by wavelength Under the condition of the perovskite film surface, a sampling point In time spectral reflectance;

[0033] All sampling points The spectral reflectance change rate Mapping into a two-dimensional matrix to generate a spectral difference map;

[0034] Set the change threshold T1, when When >T1, it means that the area is cut; when When ≤T1, it means that the area is an uncut area.

[0035] As a preferred solution of the perovskite film laser cutting positioning method of the present invention, wherein: the offset of the laser cutter is calculated according to the spectral difference map, and the cutting path is dynamically adjusted according to the offset, the specific steps are as follows:

[0036] Compare the spectral difference map with the target cutting path to determine the offset between the actual position of the cutter and the target path. The offset calculation formula is: ;

[0037] in, Indicates the coordinates of the laser cutter at the sampling point The calculated offset, Indicates the Sampling points In time Normalized spectral reflectance change rate, The index variable representing the sampling point, represents the total number of sampling points, Indicates the Sampling points The vertical distance to the target cutting path;

[0038] when When it is a positive number, the laser cutting path deviates from the uncut area and moves toward the uncut area;

[0039] when When it is a negative number, the laser cutting path deviates toward the cut area and adjusts within the cut area;

[0040] when When it is zero, the laser cutting path is exactly on the target path and no adjustment is required;

[0041] According to the offset , dynamically adjust the laser cutting path to return it to the target path and continue the cutting operation;

[0042] After cutting is completed, record the spectral reflectance change rate of all sampling points And cutting path data, based on these data, and generate the spectral reflectance change characteristic diagram of the cutting area.

[0043] As a preferred solution of the laser cutting positioning method of the perovskite film of the present invention, wherein: after the cutting is completed, quality inspection is performed, and the final perovskite film sample and cutting data are output. After the cutting is completed, the surface of the perovskite film is scanned again to generate the final spectral reflectance data. The specific steps are:

[0044] After the laser cutting is completed, the spectrometer is used to scan the entire surface of the perovskite film, collect the spectral reflectance data of each grid area, and obtain the final spectral reflectance data. , the spectral reflectance data of each grid area are aggregated to obtain the final spectral reflectance distribution map.

[0045] As a preferred solution of the perovskite thin film laser cutting positioning method of the present invention, wherein: the final spectral reflectance data is compared with the spectral reference reflectance value to confirm whether the cutting area completely covers the target path. When a cutting deviation occurs, the equipment is restarted for supplementary cutting. The specific steps are:

[0046] According to the final spectral reflectance data and spectral reference reflectance values , calculate the deviation value, and then substitute the deviation value into the spectral reflectance formula to obtain the spectral reflectance deviation ;

[0047] When the spectral reflectance deviates When it is zero, it means that the cutting area completely covers the target path and the cutting is accurate;

[0048] When the spectral reflectance deviates When it is greater than zero, it means that there is spectral deviation and the cutting is offset;

[0049] The spectral reflectance deviation of all sampling points Mapping into a two-dimensional matrix to generate a spectral deviation distribution map;

[0050] Set the deviation threshold T2;

[0051] when When ≤T2, the cutting area is considered to be within the target path range and the cutting is correct;

[0052] when When it is >T2, it is identified as a cutting deviation area;

[0053] For the identified cutting deviation area, the supplementary cutting path is calculated based on the spectral deviation distribution map to obtain the sampling points in the supplementary cutting path. The device is started to perform supplementary cutting according to the offset.

[0054] In a second aspect, the present invention provides a computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: when the computer program is executed by the processor, any step of the perovskite film laser cutting and positioning method as described in the first aspect of the present invention is implemented.

[0055] In a third aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon, wherein: when the computer program is executed by a processor, any step of the perovskite film laser cutting and positioning method as described in the first aspect of the present invention is implemented.

[0056] The beneficial effects of the present invention are as follows: the present invention introduces spectral reflectance data into the cutting positioning and quality detection process, combines a spectrometer with a laser cutter to achieve dynamic feedback and adjustment, and generates a spectral characteristic reference map of an uncut perovskite film to monitor the changes in spectral reflectance during the cutting process of the perovskite film in real time, generates a spectral difference map and dynamically adjusts the laser cutting path accordingly, thereby significantly improving the cutting accuracy and quality. In addition, after the cutting is completed, the present invention uses comparative analysis of spectral reflectance to comprehensively evaluate the cutting quality of the perovskite film, and performs supplementary cutting operations when necessary to ensure that the cutting area completely covers the target path, overcoming the defects of insufficient cutting quality detection means in the prior art. Therefore, the present invention solves the problems of cutting path offset, insufficient cutting accuracy and incomplete quality detection in the existing perovskite film laser cutting technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0058] Figure 1 This is a flow chart of the laser cutting and positioning method for perovskite thin films in Example 1.

[0059] Figure 2 Schematic diagram of the spectral difference diagram in Example 1. DETAILED DESCRIPTION

[0060] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0061] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0062] Secondly, the term "one embodiment" or "embodiment" herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in various places throughout this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive of other embodiments.

[0063] Example 1, with reference to Figure 1 and Figure 2, which is the first embodiment of the present invention, provides a perovskite film laser cutting positioning method, comprising the following steps:

[0064] S1. Fix the perovskite film sample flatly on the laser cutting platform;

[0065] Using the electrostatic adsorption fixation method, a uniform electrostatic field is formed on the surface of the laser cutting platform, firmly adsorbing the perovskite film on the platform;

[0066] The advantages of the electrostatic adsorption method are: avoiding physical damage to the edge of the perovskite film by mechanical fixtures; ensuring the surface flatness of the perovskite film, reducing the laser focal length offset caused by surface unevenness; improving the stability of the perovskite film during the cutting process, avoiding vibration or slippage;

[0067] The method of generating electrostatic adsorption is to control the potential difference on the platform surface so that it forms an adsorption force that matches the surface material of the perovskite film, calculate the electrostatic adsorption force between the perovskite film and the control platform surface, and judge whether the perovskite film is firmly adsorbed. The calculation formula is: ;

[0068] in, represents the relative dielectric constant of the perovskite thin film material, represents the dielectric constant of vacuum, represents the area of ​​contact between the perovskite film and the platform, represents the potential difference, represents the distance between the perovskite film and the terrace;

[0069] Indicates the magnitude of the electrostatic adsorption force, the value range is positive, the unit is Newton, and its magnitude directly determines the fixing strength of the perovskite film;

[0070] Set the adsorption force threshold. When the adsorption force is insufficient, readjust the potential difference and contact area.

[0071] Use an optical microscope to verify whether the laser focus is located in the center layer of the perovskite film surface;

[0072] When the distance from the laser focus to the fixed platform of the perovskite film Equal to the thickness of the perovskite film When , it means that the laser focus is on the surface of the perovskite film;

[0073] When the distance from the laser focus to the fixed platform of the perovskite film Greater or less than the thickness of the perovskite film When , it means the laser focus is offset, and the focal length parameters need to be readjusted. The adjustment formula is: ;

[0074] in, represents the refractive index of the perovskite thin film material, Indicates the numerical aperture of the laser.

[0075] S2. Scan the surface of the uncut perovskite film using a spectrometer, record the spectral reflectance distribution of each area, and generate a spectral characteristic reference map of the uncut perovskite film based on the spectral reflectance data;

[0076] The spectrometer was calibrated using a standard white light reflector to ensure that the spectrometer could accurately capture the spectral reflectance of different areas on the perovskite film surface.

[0077] The spectrometer is set to scan in the wavelength range of 300 nm to 800 nm to cover the absorption and reflection spectrum range of the perovskite material;

[0078] The sampling interval of the spectrometer was set to 0.01 mm to ensure sufficient spatial resolution while taking into account scanning efficiency;

[0079] Select high sensitivity mode to ensure reliable recording of spectral reflectance curves even with small optical differences on the surface of the perovskite film;

[0080] The spectral characteristics of perovskite films show significant reflectivity changes in the wavelength range of 300nm to 800nm, which covers the key part of its optical bandgap and facilitates the subsequent generation of high-precision spectral feature reference maps;

[0081] The surface of the perovskite film is divided into The grid area, and They represent the grid area on the surface of the perovskite film in the horizontal direction ( direction) and longitudinal ( direction), each grid area corresponds to a sampling point, and the spectral reflectance of each sampling point , indicating the wavelength is When the sampling point on the surface of the perovskite film The spectral reflectance of The horizontal and vertical coordinates of the corresponding sampling points in space;

[0082] The spectral reflectance distribution of each sampling point is integrated to calculate its normalized spectral reflectance. The spectral reflectance formula is: ;

[0083] in, Indicates the sampling point after normalization The spectral reflectance, represents the shortest wavelength, represents the longest wavelength, Indicates wavelength The weight function under Represents integral Small changes in

[0084] The range of is [0,1], which indicates the normalized spectral reflectance:

[0085] when When it is 1, it means that the reflectivity of the area is high;

[0086] when When it is 0, it means that the reflectivity of the area is low;

[0087] wavelength The weight function under , the calculation formula is: ;

[0088] in, represents the base of natural logarithms, represents the optical band gap center wavelength, represents the square of the standard deviation of the weight distribution;

[0089] The normalized spectral reflectance The data were mapped into a two-dimensional matrix to generate a baseline map of the spectral characteristics of the uncut perovskite film;

[0090] The collected spectral reflectance data and reference map are stored as a two-dimensional matrix file;

[0091] The accuracy of the reference map is determined by the scanning resolution and wavelength resolution. The reference map is a spatial distribution map of the optical properties of the perovskite film surface.

[0092] S3, starting the laser cutter to cut the perovskite film, and using a spectrometer to collect spectral reflectance data of the cut area and its surrounding area on the surface of the perovskite film;

[0093] The laser cutter starts cutting according to a preset target path (e.g., a CAD-designed cutting path) and simultaneously monitors the spectral reflectance data of the cutting area and its surroundings in real time. Laser operating parameters (such as power, focal length, and cutting speed) need to be adjusted according to the material properties and thickness of the perovskite film to ensure that the laser energy is sufficient to penetrate the perovskite film while avoiding edge thermal damage caused by excessive heat diffusion.

[0094] During cutting, the spectrometer continuously collects spectral reflectance data of the cutting area and its surroundings. The scanning range of the spectrometer is the cutting path and the uncut area around the cutting area. The scanning frequency must be synchronized with the laser cutting speed. For each sampling point, the spectral reflectance curve of the sample is recorded over time.

[0095] Collecting spectral reflectance data: One of the core innovations of this invention is to collect spectral reflectance data of the cutting area and its surroundings using a spectrometer. Unlike the existing cutting method that relies on mechanical positioning, this invention uses spectral data as the basis for cutting path adjustment, which has the following beneficial effects:

[0096] Real-time monitoring of cutting quality: During the cutting process, spectral reflectance data can reflect whether the cut is completely penetrated, whether there are uncut areas or edge thermal damage. By analyzing the spectral differences between the cut and uncut areas, the laser path can be dynamically adjusted to avoid cutting deviation.

[0097] Synchronize cutting speed and sampling frequency: This invention emphasizes that the scanning frequency of the spectrometer must be synchronized with the cutting speed to ensure that the spectral reflectance changes at the sampling points can accurately reflect the real-time cutting status. In traditional technologies, cutting and detection are often separated, but this invention achieves synchronization of cutting and detection, which significantly improves cutting accuracy and efficiency.

[0098] The present invention specifically mentions that for each sampling point, a curve of its spectral reflectivity change over time is recorded. This design solves the problem in the existing technology that it is impossible to dynamically evaluate the changes in optical properties during the cutting process. For example, when cutting the edge area of ​​the perovskite film, the spectral reflectivity change curve can be used to determine whether the cut is complete, whether the edge is damaged, and whether the path is offset. This time-resolved spectral data analysis method provides a scientific basis for subsequent path adjustment and quality assessment.

[0099] S4, comparing and calculating the spectral reflectance data with the spectral characteristic reference map, identifying the spectral difference between the cut area and the uncut area, and generating a spectral difference map;

[0100] Calculate the change of spectral reflectance of each sampling point over time and obtain the spectral reflectance change rate, which is expressed as: ;

[0101] in, Indicates sampling point In time The spectral reflectance change rate after normalization is Indicates sampling point The spectral reference reflectance value on the surface of the uncut perovskite film, Indicated by wavelength Under the condition of the perovskite film surface, a sampling point In time spectral reflectance;

[0102] The calculation formula for the spectral reflectance change rate covers a specific wavelength range in an integral form. By comparing it with the baseline reflectance, the spectral change characteristics of the cutting area are extracted. This design can accurately reflect the spectral change dynamics of the local area during the cutting process.

[0103] Traditional cutting detection methods usually rely on single-point detection or fixed wavelength monitoring, which is difficult to fully reflect the spectral changes in the cutting area. This invention introduces integral calculation and weight function , realizing spectral change analysis within the full wavelength range, avoiding the problem of missing key information in single wavelength detection, thereby enhancing the comprehensiveness and accuracy of cutting quality assessment.

[0104] All sampling points The spectral reflectance change rate Mapping into a two-dimensional matrix, a spectral difference map is generated to identify the spectral differences between the cut and uncut areas;

[0105] Set the change threshold T1, when When >T1, it means that the area is cut; when When ≤T1, it means that the area is an uncut area;

[0106] The present invention calculates the spectral reflectance change rate by comparing the spectral reflectance data with the reference map, and generates a spectral difference map, thereby achieving accurate identification of the cut area and the uncut area. These steps not only solve the problem of difficulty in real-time monitoring of optical property changes in existing laser cutting technology, but also ensures accurate judgment of the cutting area through the setting of the threshold T1, thereby improving the reliability of cutting path adjustment and cutting quality assessment, and providing an innovative solution for high-precision processing of perovskite films.

[0107] S5. Calculate the offset of the laser cutter according to the spectral difference graph, and dynamically adjust the cutting path according to the offset;

[0108] Compare the spectral difference map with the target cutting path to determine the offset between the actual position of the cutter and the target path. The offset calculation formula is: ;

[0109] in, Indicates the coordinates of the laser cutter at the sampling point The calculated offset, Indicates the Sampling points In time Normalized spectral reflectance change rate, The index variable representing the sampling point, represents the total number of sampling points, Indicates the Sampling points The vertical distance to the target cutting path;

[0110] when When it is a positive number: the laser cutting path deviates towards the uncut area and moves towards the uncut area;

[0111] when When it is a negative number: the laser cutting path deviates towards the cut area and adjusts within the cut area;

[0112] when When it is zero: the laser cutting path is exactly on the target path and no adjustment is required;

[0113] The offset is calculated based on the rate of change of spectral reflectance and the distance from the sampling point to the target cutting path. The deviation of optical characteristics and geometric position is comprehensively considered through weighted averaging. This design can dynamically reflect the actual offset degree of the cutting area.

[0114] Traditional laser cutting technology usually relies on mechanical positioning, making it difficult to perceive and adjust path deviations in real time during the cutting process. The present invention, by combining spectral data and path geometric offsets, provides a dynamic feedback mechanism that can detect and correct path deviations in real time during the cutting process, thereby significantly improving cutting accuracy. In addition, by assigning weights to spectral data, it can prioritize areas with significant optical changes, avoiding misjudgments caused by local perovskite film inhomogeneities.

[0115] According to the offset , dynamically adjust the laser cutting path to return it to the target path and continue the cutting operation. After the adjustment, the spectral data needs to be re-collected, and the spectral difference calculation and offset adjustment are performed cyclically until the cutting path completely coincides with the target path;

[0116] After cutting is completed, record the spectral reflectance change rate of all sampling points and cutting path data, and generating a spectral reflectance variation characteristic diagram of the cutting area based on these data;

[0117] The present invention calculates the offset of the laser cutter by comparing the spectral difference map with the target path, and dynamically adjusts the cutting path based on the offset, which significantly improves the precision and quality of perovskite film cutting. The calculation of the offset comprehensively considers the changes in optical properties and geometric position deviations to ensure the accuracy of the adjustment; the dynamic feedback mechanism enables the cutting process to be optimized in real time, avoiding quality problems caused by path offset in traditional technologies; the spectral characteristic map after cutting is completed further provides a scientific basis for quality evaluation and process improvement. The design of the present invention has significant innovation and application value in solving the problem of precision cutting of perovskite films.

[0118] S6. After cutting, quality inspection is performed, and the final perovskite film sample and cutting data are output. After cutting, the perovskite film surface is scanned again to generate the final spectral reflectance data;

[0119] After the laser cutting is completed, the spectrometer is used to scan the entire surface of the perovskite film, collect the spectral reflectance data of each grid area, and obtain the final spectral reflectance data. , after collecting the spectral reflectance data of each grid area, the final spectral reflectance distribution map is obtained;

[0120] After cutting, a spectrometer is used to scan the entire surface of the perovskite film, collecting spectral reflectance data for each grid area. The core of this concept is to fully capture the changes in the optical properties of the perovskite film after cutting through high-resolution scanning, ensuring comprehensive and accurate detection.

[0121] In existing technologies, quality inspection of perovskite films after cutting typically relies on microscopic images or geometric measurements, which fail to fully reflect changes in optical properties. This step, through spectrometer scanning, can accurately capture optical anomalies at the cut edge, residual spectral characteristics of uncut areas, and spectral deviations in thermally damaged areas, thereby providing a comprehensive assessment of cutting quality. This method is particularly suitable for optically sensitive materials such as perovskite films, and can effectively address the problem that traditional inspection methods cannot identify microscopic defects.

[0122] The present invention uses a spectrometer to perform a full-coverage scan of the surface of the perovskite film after laser cutting to generate a final spectral reflectance distribution map, which significantly improves the quality detection capability of the perovskite film after cutting; the spectrometer scan can comprehensively capture the changes in optical properties during the cutting process, especially the thermal damage in the edge area and the spectral deviation of the uncut residual area; the distribution map displays the optical state of the cut area in an intuitive manner, providing data support for quality assessment and subsequent packaging; compared with traditional geometric detection methods, the present invention solves the problem of difficult identification of microscopic defects through optical detection methods, which is of great significance to the precision processing of optically sensitive materials such as perovskite films; in addition, the output of cutting data provides a scientific basis for subsequent process optimization, and has significant technical advantages and application value.

[0123] S7. Compare the final spectral reflectance data with the spectral reference reflectance value to confirm whether the cutting area completely covers the target path. If cutting deviation occurs, restart the equipment for additional cutting;

[0124] According to the final spectral reflectance data and spectral reference reflectance values , calculate the deviation value, and then substitute the deviation value into the spectral reflectance formula to obtain the spectral reflectance deviation ,

[0125] , the expression is: ;

[0126] When the spectral reflectance deviates When it is zero, it means that the cutting area completely covers the target path and the cutting is accurate;

[0127] When the spectral reflectance deviates When it is greater than zero, it means that there is spectral deviation and the cutting is offset;

[0128] The spectral reflectance deviation of all sampling points Mapping into a two-dimensional matrix generates a spectral deviation distribution map, which is used to identify the cutting deviation area;

[0129] Set the deviation threshold T2;

[0130] when When ≤T2, the cutting area is considered to be within the target path range and the cutting is correct;

[0131] when When it is >T2, it is identified as a cutting deviation area;

[0132] For the identified cutting deviation area, the supplementary cutting path is calculated based on the spectral deviation distribution map to obtain the sampling points in the supplementary cutting path. The offset is set, and the equipment is started to perform supplementary cutting according to the offset. The calculation formula for the supplementary cutting path is: ;

[0133] in, Indicates the sampling points in the supplementary cutting path The offset is used to adjust the cutting path of the laser cutter at this point. Indicates sampling point The vertical distance to the target cutting path is used to measure the spatial position of the cutting deviation. Indicates the The spectral reflectance deviation of each sampling point is The index variable representing the sampling point, Indicates the total number of sampling points;

[0134] when When it is a positive real number, the device is started to make additional cuts outside the target path;

[0135] when When it is a negative real number, the device is started to make additional cuts into the target path.

[0136] This embodiment also provides a computer device suitable for the perovskite film laser cutting positioning method, including: a memory and a processor; the memory is used to store computer-executable instructions, and the processor is used to execute computer-executable instructions to implement the perovskite film laser cutting positioning method proposed in the above embodiment.

[0137] The computer device may be a terminal, comprising a processor, memory, a communication interface, a display, and an input device connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores an operating system and computer programs. The internal memory provides an environment for the operating system and computer programs stored in the non-volatile storage media. The communication interface of the computer device is used to communicate with external terminals via wired or wireless communication. Wireless communication may be achieved via Wi-Fi, a carrier network, NFC (near-field communication), or other technologies. The display of the computer device may be a liquid crystal display or an electronic ink display. The input device may be a touchscreen overlay on the display, buttons, a trackball, or a touchpad on the computer device housing, or an external keyboard, touchpad, or mouse.

[0138] This embodiment also provides a storage medium having a computer program stored thereon, which, when executed by a processor, implements the method for laser cutting and positioning of perovskite thin films as proposed in the above embodiment; the storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, disk or optical disk.

[0139] In summary, the present invention introduces spectral reflectivity data into the cutting positioning and quality detection process, combines a spectrometer with a laser cutter to achieve dynamic feedback and adjustment, generates a spectral characteristic reference map of an uncut perovskite film, monitors the changes in spectral reflectivity during the cutting process of the perovskite film in real time, generates a spectral difference map and dynamically adjusts the laser cutting path accordingly, thereby significantly improving the cutting accuracy and quality. In addition, after the cutting is completed, the present invention uses comparative analysis of spectral reflectivity to comprehensively evaluate the cutting quality of the perovskite film, and performs supplementary cutting operations when necessary to ensure that the cutting area completely covers the target path, overcoming the defects of insufficient cutting quality detection means in the prior art. Therefore, the present invention solves the problems of cutting path offset, insufficient cutting accuracy and incomplete quality detection in the existing perovskite film laser cutting technology.

[0140] Example 2, referring to Table 1, is the second example of the present invention. In order to further verify the technical solution of the present invention, experimental simulation data of the perovskite film laser cutting positioning method are provided.

[0141] This example aims to verify the advantages of the spectral reflectance distribution map generation technology proposed in the present invention in perovskite film quality testing after cutting. The test object is a perovskite film. The goal is to detect the change in spectral reflectance distribution after laser cutting and compare it with the existing technology (traditional microscopic geometric detection method). The specific implementation process is as follows:

[0142] Test sample preparation

[0143] A 10cm x 10cm perovskite film sample with a thickness of 500nm and surface uniformity within ±5% was selected. The perovskite film was fixed on a laser cutting platform, and the laser cutting path was set to a set of continuous straight lines with 1mm intervals, for a total of 100 cutting paths.

[0144] Laser cutting process

[0145] Cutting is performed using a fiber laser with a wavelength of 1064nm, a power setting of 5W, and a cutting speed of 10mm / s. During the cutting process, the laser path is monitored in real time and dynamically adjusted to ensure cutting accuracy. After cutting, the surface of the perovskite film shows a clear distribution of cut and uncut areas.

[0146] Spectral data acquisition

[0147] After cutting, a spectrometer was used to scan the entire surface of the perovskite film. The sample was divided into a 1 mm × 1 mm grid, with a total of 10,000 sampling points. Spectral reflectance data was recorded at each grid point, with a detection wavelength range of 400 nm to 800 nm and a step size of 5 nm. After the scan was completed, the spectral data from all sampling points were combined to generate a spectral reflectance distribution map.

[0148] Comparison with existing technologies

[0149] The cut perovskite film samples were inspected using traditional microscopic geometry inspection methods, focusing on the cut width, edge roughness, and the residue in the uncut area. The microscopic image data was manually analyzed and processed.

[0150] Results recording and analysis

[0151] The performance parameters of the present invention and the prior art in terms of cutting area edge detection, uncut residue detection, thermal damage identification, etc. are recorded and presented in a quantitative form.

[0152] The details are shown in Table 1 below:

[0153]

[0154] As can be seen from the table data, the performance of the present invention in the quality inspection of perovskite thin films after cutting is significantly better than the existing technology, especially in terms of cutting accuracy, detection efficiency and thermal damage identification.

[0155] Cutting area recognition accuracy

[0156] The cutting area recognition accuracy of the present invention reaches 98.5%, which is 15.6% higher than the 85.2% of the existing technology. This advantage is due to the generation of a spectral reflectance distribution map. Through the precise analysis of the spectral characteristics of the cut area and the uncut area, the boundary between the two can be clearly distinguished. The traditional microscopic geometric detection method only relies on image information and is easily affected by edge irregularities and optical interference.

[0157] Uncut area residual detection rate

[0158] The detection rate of uncut areas in the present invention reaches 99.2%, which is much higher than the 87.4% of the existing technology. The high resolution and full coverage scanning method of the spectral data enable even tiny uncut residual areas to be accurately captured, while traditional methods are prone to missing small areas of residue due to resolution limitations.

[0159] Identification of thermal damage areas

[0160] The recognition rate of thermally damaged areas is one of the significant advantages of the present invention, reaching 96.8%, while the existing technology is only 70.5%. During the laser cutting process, thermal damage will cause local changes in the optical properties of the perovskite film. Spectral reflectivity detection can accurately capture these changes, while microscopic geometric detection has difficulty in effectively identifying the microscopic features of the thermally damaged edge.

[0161] Detection time and resolution

[0162] The detection time of the present invention is 5.2 minutes, which is nearly 80% shorter than the 25.8 minutes of the existing technology. At the same time, the resolution of the spectral reflectance distribution map reaches 1μm, which is significantly better than the 10μm of the microscopic geometric detection method. This result proves that the spectral scanning method not only improves the detection efficiency, but also significantly improves the data resolution.

[0163] False detection rate and degree of automation

[0164] In terms of false detection rate, the present invention is only 0.6%, which is significantly lower than the 9.8% of the existing technology. In addition, the data processing process of the present invention is 100% automated, while traditional technology can only achieve 30% automation due to its reliance on manual analysis. This shows that the present invention can effectively reduce human errors and improve the reliability and consistency of detection.

[0165] In summary, the present invention demonstrates significant advantages in quality inspection of perovskite films after cutting through spectral reflectance distribution map technology. It not only improves the accuracy of cutting area identification, but also significantly optimizes detection efficiency and automation, solves the shortcomings of existing technologies in thermal damage identification and uncut residue detection, and reflects its innovativeness and practical value.

[0166] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A perovskite film laser cutting positioning method, characterized by: include: Fix the perovskite film sample flatly on the laser cutting platform; Scan the surface of the uncut perovskite film using a spectrometer, record the spectral reflectance distribution of each area, and generate a spectral characteristic reference map of the uncut perovskite film based on the spectral reflectance data; Start the laser cutter to cut the perovskite film, and use the spectrometer to collect spectral reflectance data of the cut area and its surrounding area on the surface of the perovskite film; Compare and calculate the spectral reflectance data with the spectral characteristic reference map, identify the spectral difference between the cut area and the uncut area, and generate a spectral difference map; According to the spectral difference map, the offset of the laser cutter is calculated, and the cutting path is dynamically adjusted according to the offset. The specific steps are as follows: Compare the spectral difference map with the target cutting path to determine the offset between the actual position of the cutter and the target path. The offset calculation formula is: ; in, Indicates the coordinates of the laser cutter at the sampling point The calculated offset, Indicates the Sampling points In time Normalized spectral reflectance change rate, The index variable representing the sampling point, represents the total number of sampling points, Indicates the Sampling points The vertical distance to the target cutting path; when When it is a positive number, the laser cutting path deviates from the uncut area and moves toward the uncut area; when When it is a negative number, the laser cutting path deviates toward the cut area and adjusts within the cut area; when When it is zero, the laser cutting path is exactly on the target path and no adjustment is required; According to the offset , dynamically adjust the laser cutting path to return it to the target path and continue the cutting operation; After cutting is completed, record the spectral reflectance change rate of all sampling points and cutting path data, and generate a spectral reflectance change characteristic diagram of the cutting area; After cutting, quality inspection is performed, and the final perovskite film sample and cutting data are output. After cutting, the perovskite film surface is scanned again to generate the final spectral reflectance data; Compare the final spectral reflectance data with the spectral reference reflectance value to confirm whether the cutting area completely covers the target path. If cutting deviation occurs, restart the equipment for additional cutting.

2. The perovskite thin film laser cutting and positioning method according to claim 1, wherein: The perovskite film sample is fixed flat on the laser cutting platform, and the specific steps are as follows: The perovskite film is firmly adsorbed on the platform using electrostatic adsorption fixation; Calculate the electrostatic adsorption force between the perovskite film and the control platform surface to determine whether the perovskite film is firmly adsorbed; Set the adsorption force threshold. When the adsorption force is insufficient, readjust the potential difference and contact area. Use an optical microscope to verify whether the laser focus is located in the center layer of the perovskite film surface; When the distance from the laser focus to the fixed platform of the perovskite film Equal to the thickness of the perovskite film When , it means that the laser focus is on the surface of the perovskite film; When the distance from the laser focus to the fixed platform of the perovskite film Greater or less than the thickness of the perovskite film , it means the laser focus is offset and the focal length parameters need to be readjusted.

3. The perovskite thin film laser cutting and positioning method according to claim 2, wherein: The spectrometer is used to scan the surface of the uncut perovskite film, the spectral reflectance distribution of each area is recorded, and a spectral characteristic reference map of the uncut perovskite film is generated based on the spectral reflectance data. The specific steps are as follows: The surface of the perovskite film is divided into The grid area, and Represents the number of grid areas on the surface of the perovskite film in the horizontal and vertical directions, respectively. Each grid area corresponds to a sampling point, and the spectral reflectance of each sampling point is Indicates the wavelength is When the sampling point on the surface of the perovskite film The spectral reflectance of The horizontal and vertical coordinates of the corresponding sampling points in space; The spectral reflectance distribution of each sampling point is integrated to calculate its normalized spectral reflectance. The spectral reflectance formula is: ; in, Indicates the sampling point after normalization The spectral reflectance, represents the shortest wavelength, represents the longest wavelength, Indicates wavelength The weight function under Represents integral Small changes in The normalized spectral reflectance The data were mapped into a two-dimensional matrix to generate a baseline map of the spectral characteristics of the uncut perovskite film; The collected spectral reflectance data and reference map are stored as a two-dimensional matrix file.

4. The perovskite thin film laser cutting and positioning method according to claim 3, wherein: The laser cutter is started to cut the perovskite film, and the spectrometer is used to collect spectral reflectance data of the cut area and its surrounding area on the surface of the perovskite film. The specific steps are as follows: The laser cutter starts cutting according to the preset target path. During cutting, the spectrometer continuously collects spectral reflectance data of the cutting area and its surroundings, and records the spectral reflectance curve of each sampling point as it changes with time.

5. The perovskite thin film laser cutting and positioning method according to claim 4, characterized in that: The spectral reflectance data is compared and calculated with the spectral characteristic reference map, the spectral difference between the cut area and the uncut area is identified, and the spectral difference map is generated. The specific steps are as follows: Calculate the change of spectral reflectance of each sampling point over time and obtain the spectral reflectance change rate, which is expressed as: ； in, Indicates sampling point In time The spectral reflectance change rate after normalization is Indicates sampling point The spectral reference reflectance value on the surface of the uncut perovskite film, Indicated by wavelength Under the condition of the perovskite film surface, a sampling point In time spectral reflectance; All sampling points The spectral reflectance change rate Mapping into a two-dimensional matrix to generate a spectral difference map; Set the change threshold T1, when When >T1, it means that the area is cut; when When ≤T1, it means that the area is an uncut area.

6. The perovskite thin film laser cutting and positioning method according to claim 1, wherein: After the cutting is completed, quality inspection is performed to output the final perovskite film sample and cutting data. After the cutting is completed, the surface of the perovskite film is scanned again to generate the final spectral reflectance data. The specific steps are as follows: After the laser cutting is completed, the spectrometer is used to scan the entire surface of the perovskite film, collect the spectral reflectance data of each grid area, and obtain the final spectral reflectance data. , the spectral reflectance data of each grid area are aggregated to obtain the final spectral reflectance distribution map.

7. The perovskite thin film laser cutting and positioning method according to claim 6, wherein: The final spectral reflectance data is compared with the spectral reference reflectance value to confirm whether the cutting area completely covers the target path. If a cutting deviation occurs, the device is restarted for supplementary cutting. The specific steps are as follows: According to the final spectral reflectance data and spectral reference reflectance values , calculate the deviation value, and then substitute the deviation value into the spectral reflectance formula to obtain the spectral reflectance deviation ; When the spectral reflectance deviates When it is zero, it means that the cutting area completely covers the target path and the cutting is accurate; When the spectral reflectance deviates When it is greater than zero, it means that there is spectral deviation and the cutting is offset; The spectral reflectance deviation of all sampling points Mapping into a two-dimensional matrix to generate a spectral deviation distribution map; Set the deviation threshold T2; when When ≤T2, the cutting area is considered to be within the target path range and the cutting is correct; when When it is >T2, it is identified as a cutting deviation area; For the identified cutting deviation area, the supplementary cutting path is calculated based on the spectral deviation distribution map to obtain the sampling points in the supplementary cutting path. The device is started to perform supplementary cutting according to the offset.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the perovskite thin film laser cutting positioning method according to any one of claims 1 to 7 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the perovskite thin film laser cutting and positioning method according to any one of claims 1 to 7 are implemented.

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