Circuit for monitoring degradation of semiconductor device

Abstract

The invention relates to a circuit for monitoring degradation of a semiconductor device. A system includes a semiconductor device including a source terminal, a drain terminal, and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The system also includes a degradation monitoring circuit including an electrical sensor, where the degradation monitoring circuit is configured to: generate, using the electrical sensor, a sensor signal corresponding to one or more of the plurality of interface channels; determining whether there is a degradation of the material at one or more of the plurality of interface channels based on the sensor signal; and outputting information indicating whether there is a degradation of the material at one or more of the plurality of interface channels.

Description

Technical Field

[0001] The present disclosure relates to semiconductor devices such as power transistors. Background Art

[0002] A semiconductor device may include a source terminal, a drain terminal, and an interface layer between the source terminal and the gate terminal. The source terminal and the drain terminal may include one or more conductor materials. The interface layer may include one or more semiconductor materials that conduct electricity when activated via the gate terminal, such that current flows from the source terminal to the drain terminal via the interface layer. In some cases, degradation may occur in the semiconductor device even when the semiconductor material is activated, thereby inhibiting current flow through the interface layer. This degradation may occur at portions of the interface layer that connect the semiconductor material of the interface layer to the source terminal or the drain terminal. Summary of the Invention

[0003] Generally, the present disclosure relates to a circuit for detecting degradation within a semiconductor device. For example, a system may include a degradation monitoring circuit that includes a sensor configured to generate a signal indicative of degradation within the semiconductor device. The sensor may be connected to a sensor current path within the semiconductor device such that the current flowing through the sensor indicates one or more characteristics of the semiconductor device along the sensor current path. For example, the sensor may be configured to measure one or more electrical parameters corresponding to the sensor current path, such as any one or more of resistance, voltage, and current. These electrical parameters may indicate whether there is degradation along the sensor current path or at a location near the semiconductor current path.

[0004] For example, the source terminal and the drain terminal of the semiconductor device may include a conductor material such as copper, and the interface layer may include a semiconductor material such as silicon. The interface layer may include a plurality of interface channels that include conductor materials that connect the semiconductor material of the interface layer to the conductor materials of the source terminal and the drain terminal. The signal generated by the sensor may indicate whether there is degradation at the interface channels of the interface layer, at the boundary between the interface channel and the drain terminal, or at the boundary between the interface channel and the source terminal. For example, when an electrical parameter corresponding to an interface channel of the interface layer is higher than a threshold electrical parameter value, this may indicate that there is degradation along the sensor current path within the semiconductor device, such as at the boundary between the interface channel and the drain terminal.

[0005] The techniques of the present disclosure may provide one or more advantages. For example, based on sensors of a degradation monitoring circuit that indicate degradation of one or more characteristics of a semiconductor device, compared to a system that does not use sensors to detect the characteristics of the semiconductor device, the degradation monitoring circuit can more effectively detect faults in the semiconductor device. The sensors may be configured to perform measurements each time the semiconductor material is activated and capable of conducting during a switching cycle. This means that the degradation monitoring circuit can track degradation during the lifetime of the semiconductor device and take remedial measures immediately when the degradation occurs. In some examples, the system may cause the semiconductor device to enter a safe operating mode in response to detecting degradation and output a message indicating the detected degradation. Since the semiconductor device may be configured to operate at a reduced efficiency even in the presence of some degradation, causing the semiconductor device to enter a safe operating mode in response to detecting degradation provides time to replace the semiconductor device before it completely fails.

[0006] In some examples, a system includes a semiconductor device that includes a source terminal, a drain terminal, and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The system further includes an integrated degradation monitoring circuit that includes an electrical sensor, wherein the degradation monitoring circuit is configured to: generate, using the electrical sensor, a sensor signal corresponding to one or more of the plurality of interface channels; determine, based on the sensor signal, whether there is degradation of a material at one or more of the plurality of interface channels; and output information indicating whether there is degradation of a material at one or more of the plurality of interface channels.

[0007] In some examples, a degradation monitoring circuit includes an electrical sensor, wherein the degradation monitoring circuit is configured to: generate, using the electrical sensor, a sensor signal corresponding to one or more of the plurality of interface channels of a semiconductor device. The semiconductor device includes: a source terminal; a drain terminal; and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The degradation monitoring circuit is further configured to determine, based on the sensor signal, whether there is degradation of a material at one or more of the plurality of interface channels; and output information indicating whether there is degradation of a material at one or more of the plurality of interface channels.

[0008] In some examples, a method includes generating, by a degradation monitoring circuit, a sensor signal corresponding to one or more of a plurality of interface channels of a semiconductor device using an electrical sensor. The semiconductor device includes a source terminal, a drain terminal, and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The method further includes determining, by the degradation monitoring circuit, whether there is degradation of a material at one or more of the plurality of interface channels based on the sensor signal; and outputting, by the degradation monitoring circuit, information indicating whether there is degradation of a material at one or more of the plurality of interface channels.

[0009] The Summary is intended to provide an overview of the subject matter described in this disclosure. It is not intended to provide an exclusive or exhaustive explanation of the systems, devices, and methods described in the accompanying drawings and the following description. Other details of one or more examples of the disclosure are set forth in the accompanying drawings and the following description. Other features, objects, and advantages will be apparent from the specification, the drawings, and the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a block diagram illustrating a system for detecting degradation within a semiconductor device in accordance with the present disclosure;

[0011] Figure 2 is a conceptual diagram illustrating a system of an electrical sensor including a degradation monitoring circuit and an example sensor current path through a semiconductor device in accordance with the present disclosure;

[0012] Figure 3 is a graph illustrating the gate voltage and temperature of a semiconductor device over time in accordance with the present disclosure;

[0013] Figure 4 is a conceptual diagram in accordance with the present disclosure, the conceptual diagram including a system for monitoring delamination by comparing electrical parameters of an area where delamination is likely to occur with electrical parameters of an area where delamination is less likely to occur;

[0014] Figure 5 is a graph illustrating the resistance of a set of sensor current paths of a degradation monitoring circuit within a switching cycle sequence of a semiconductor device in accordance with the present disclosure;

[0015] Figure 6 is a graph illustrating a change in detection current when delamination occurs in accordance with the present disclosure; and

[0016] Figure 7 is a flowchart illustrating an example operation for determining whether there is degradation within a semiconductor device in accordance with one or more techniques of the present disclosure. DETAILED DESCRIPTION

[0017] Figure 1 is a block diagram illustrating a system 100 for detecting degradation within a semiconductor device in accordance with the present disclosure. As Figure 1 shown, system 100 includes a degradation monitoring circuit 110 that includes a processing circuitry 112, a memory 114, and an electrical sensor 116. System 100 also includes a semiconductor device 120 that includes a source terminal 122, a drain terminal 124, a gate terminal 126, and an interface layer 130. The interface layer 130 includes one or more interface channels 132, a first portion 134 of a semiconductor material, and a second portion 136 of the semiconductor material. System 100 also includes a gate driver circuit 140. The degradation monitoring circuit 110 may represent an integrated circuit configured to sense a signal indicative of degradation and process the signal to detect degradation.

[0018] In a semiconductor device, degradation may cause one or more fault conditions that inhibit the performance of the semiconductor device. For example, degradation may involve delamination between components of the semiconductor device and / or cracks within the materials of the semiconductor device. The degradation monitoring circuit 110 may be configured to detect degradation present in one or more components of the semiconductor device 120. In some examples, the degradation monitoring circuit 110 may monitor degradation over a period of time, such as over the lifetime of the semiconductor device 120. In response to the degradation monitoring circuit 110 determining that the degradation exceeds a threshold amount of degradation, the degradation monitoring circuit 110 may output information indicative of the degradation. Additionally or alternatively, in response to the degradation monitoring circuit 110 determining that the degradation exceeds a threshold amount of degradation, the degradation monitoring circuit 110 may cause the semiconductor device 120 to transition from a normal operating mode to a safe operating mode.

[0019] The degradation monitoring circuit 110 may include a processing circuitry 112. The processing circuitry 112 may include, for example, one or more microprocessors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), or equivalent discrete or integrated logic circuitry, or any combination of the foregoing devices or circuitry. Accordingly, the processing circuitry 112 may include any suitable structure for performing the functions of the degradation monitoring circuit 110 described herein, whether in hardware, software, firmware, or any combination thereof.

[0020] The degradation monitoring circuit 110 may include a memory 114 that communicates with a processing circuitry device 112. In some examples, the memory 114 that communicates with the processing circuitry device 112 stores computer-readable instructions that, when executed by the processing circuitry device 112, cause the degradation monitoring circuit 110 to perform the various functions attributed herein to the degradation monitoring circuit 110. The memory 114 may include any volatile, non-volatile, magnetic, optical, or dielectric, such as random access memory (RAM), read-only memory (ROM), non-volatile RAM (NVRAM), electrically erasable programmable ROM (EEPROM), flash memory, or any other digital medium capable of storing information.

[0021] The electrical sensor 116 may be configured to generate a sensor signal indicative of one or more characteristics of the semiconductor device 120. In some examples, the electrical sensor 116 may output an electrical signal via a sensor current path through the semiconductor device 120 and receive an electrical signal via the sensor current path through the semiconductor device 120. That is, the electrical sensor 116 may be located on a sensor current path that extends through the semiconductor device 120 such that the electrical sensor 116 both outputs an electrical signal to the semiconductor device 120 and receives an electrical signal from the semiconductor device 120. Based on the electrical signal output to the semiconductor device 120 and the electrical signal received from the semiconductor device 120, the electrical sensor 116 may generate a sensor signal indicative of one or more characteristics of the semiconductor device 120. For example, the sensor signal may indicate one or more electrical parameters corresponding to the sensor current path. These one or more electrical parameters may indicate one or more characteristics of the semiconductor device 120.

[0022] The semiconductor device 120 may represent a semiconductor transistor device or other types of switches configured for power delivery. In some cases, the semiconductor device 120 may include a power switch, such as but not limited to any type of field effect transistor (FET), including metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), insulated gate bipolar transistor (IGBT), junction field effect transistor (JFET), high electron mobility transistor (HEMT), or any one or combination of other types of elements controlled using voltage or current. Additionally, the semiconductor device 120 may include any one or combination of n-type transistors, p-type transistors, and other types of power transistors. In some examples, the semiconductor device 120 includes vertical transistors, lateral transistors, and / or horizontal transistors. In some examples, the semiconductor device 120 includes other analog devices, such as diodes and / or thyristors. In some examples, the semiconductor device 120 may operate as a switch and / or as an analog device.

[0023] In some examples, semiconductor device 120 includes three terminals: two load terminals and one control terminal. When semiconductor device 120 represents a MOSFET, the load terminals can include a source terminal (e.g., source terminal 122) and a drain terminal (e.g., drain terminal 124), and the control terminal includes at least one gate terminal (e.g., gate terminal 126). In examples where the two load terminals can include source terminal 122 and drain terminal 124, current can flow across semiconductor device 120 from source terminal 122 to drain terminal 124. In examples where the control terminal includes gate terminal 126, semiconductor device 120 can control the current flowing from source terminal 122 to drain terminal 124 based on a control signal received by gate terminal 126. When semiconductor device 120 represents a BJT switch, the control terminal can represent a base terminal ( Figure 1 not shown).

[0024] Current can flow between the two load terminals of semiconductor device 120 based on the voltage at the corresponding control terminal. That is, current can flow from drain terminal 124 to source terminal 122 based on the voltage at gate terminal 126. Thus, current can flow across semiconductor device 120 from source terminal 122 to drain terminal 124 based on a control signal delivered to gate terminal 126 of semiconductor device 120. In one example, if the voltage applied to gate terminal 126 of semiconductor device 120 is greater than or equal to a voltage threshold, semiconductor device 120 can be activated and current flows from source terminal 122 to drain terminal 124. Additionally, when the voltage applied to gate terminal 126 of semiconductor device 120 is below the threshold voltage, semiconductor device 120 can be deactivated, thereby preventing current from flowing from source terminal 122 to drain terminal 124.

[0025] Semiconductor device 120 can include various material compounds such as silicon, silicon carbide, gallium nitride, or any other combination of one or more semiconductor materials. In some examples, silicon carbide switches may experience lower switching power losses. Magnetic improvements and faster switching (such as gallium nitride switches) can allow power transistors to draw short current bursts. Compared to low-frequency devices, these high-frequency devices may require more precise timing for sending control signals (e.g., voltage signals delivered to the control terminals of power transistors).

[0026] The semiconductor device 120 may include an interface layer 130 between a source terminal 122 and a drain terminal 124. When the semiconductor device 120 is activated, current may flow across the interface layer 130 from the source terminal 122 to the drain terminal 124. When the semiconductor device 120 is deactivated, the interface layer 130 may prevent current from flowing across the semiconductor device 120 from the source terminal 122 to the drain terminal. A control signal received by the gate terminal 126 may control whether the semiconductor device 120 is activated to make the interface layer 130 conductive, or may control whether the semiconductor device 120 is deactivated to make the interface layer 130 non-conductive.

[0027] The source terminal 122 and the drain terminal 124 may include one or more conductor materials such as copper, silver, aluminum, gold, graphite, or any combination thereof. The conductor material may conduct electricity without being activated or otherwise stimulated by another signal. That is, the conductor material may have a high level of conductivity, thus allowing for easy flow of current. For example, copper can freely carry current without the need for a control signal to activate the copper to conduct current.

[0028] The semiconductor material may have a moderate conductivity such that current is configured to flow through the semiconductor material. In some cases, current may not flow through the semiconductor material as easily as it flows through the conductor material. In some examples, current flows through the semiconductor material only when a voltage greater than a voltage threshold is applied to the semiconductor material. This means that the semiconductor material can be used in semiconductor devices such as power transistors, so that current flow across the power transistor can be controlled based on the voltage applied to the semiconductor material. Examples of semiconductor materials include silicon, gallium arsenide, gallium nitride, germanium, and silicon carbide.

[0029] In some examples, the interface layer 130 of the semiconductor device 120 may include one or more interface channels 132. Each of the one or more interface channels 132 may include a conductor material. The conductor material of the one or more interface channels 132 may include the same conductor material as the conductor material of the source terminal 122 and / or the drain terminal 124, but this is not required. In some cases, the conductor material of the one or more interface channels 132 may be different from the conductor material of the source terminal 122 and / or the drain terminal 124. In any case, the conductor material of the one or more interface channels 132 may be configured to conduct the power flowing through the semiconductor device 120 from the source terminal 122 to the drain terminal 124 via the interface layer 130. For example, one or more of the one or more interface channels 132 may represent the interface between the source terminal 122 and the semiconductor materials 134, 136, and one or more of the one or more interface channels 132 may represent the interface between the semiconductor materials 134, 136 and the drain terminal 124.

[0030] The interface layer 130 may include a first portion 134 of semiconductor material and a second portion 136 of semiconductor material. The interface layer 130 is not limited to including two portions of semiconductor material. In some examples, the interface layer 130 includes more than two portions of semiconductor material. In some examples, the first portion 134 of semiconductor material and the second portion 136 of semiconductor material may extend through the interface layer 130 substantially perpendicular to the drain terminal 124 and the source terminal 122. That is, the interface layer 130 may extend along the space between the drain terminal 124 and the source terminal 122, where the drain terminal 124 and the source terminal 122 are parallel to each other.

[0031] One or more of the one or more interface channels 132 may connect the first portion 134 of semiconductor material and the second portion 136 of semiconductor material to the source terminal 122 and / or the drain terminal 124. In some examples, a set of the one or more interface channels 132 may connect the first portion 134 of semiconductor material to the source terminal 122. In some examples, a set of the one or more interface channels 132 may connect the second portion 136 of semiconductor material to the source terminal 122. In some examples, a set of the one or more interface channels 132 may connect the first portion 134 of semiconductor material to the drain terminal 124. In some examples, a set of the one or more interface channels 132 may connect the second portion 136 of semiconductor material to the drain terminal 124.

[0032] Deterioration may cause the semiconductor device to fail. For example, when one or more materials crack, break, separate, or otherwise deteriorate in a way that impedes the ability of current to flow through the semiconductor device, this may hinder the functionality of the semiconductor device. When the semiconductor device performs a series of switching cycles, the temperature of the semiconductor device may increase when the semiconductor device is activated and decrease when the semiconductor device is deactivated. Since the semiconductor device can switch between activation and deactivation throughout the sequence of switching cycles, this means that the temperature of the semiconductor device can fluctuate between a first temperature and a second temperature higher than the first temperature. These temperature fluctuations may cause deterioration of one or more materials of the semiconductor device.

[0033] One type of deterioration is delamination. In some cases, delamination occurs when materials separate to form cracks. Delamination may also occur when two previously contacting materials separate, thereby forming a crack at the boundary between the two materials. In the semiconductor device 120, it may be important that current flows through certain materials and across the boundaries between materials so that the semiconductor device 120 can perform certain functions. When materials delaminate or otherwise deteriorate, this may have a negative impact on the ability of current to flow through the semiconductor device 120. Therefore, it may be beneficial for the deterioration monitoring unit 110 to monitor the semiconductor device 120 over an extended period of time to detect deterioration.

[0034] In some examples, when the semiconductor device completes a certain number of switching cycles, the effects of deterioration may become apparent in the semiconductor device. For example, the semiconductor device may operate normally during most of the operating life of the semiconductor device. However, during each switching cycle, heating fluctuations may cause deterioration of the materials of the semiconductor device. After a certain number of switching cycles, the materials of the semiconductor device may give way. For example, when the semiconductor device 120 completes a certain number of switching cycles, delamination may occur inside the materials or at the boundaries between the materials. For example, this may affect the conductivity of the semiconductor device.

[0035] For example, deterioration may occur at one or more of the interface channels 132 (one or more). An example of deterioration is that the interface channel in the interface channel(s) 132 (one or more) separates from the source terminal 122 or from the drain terminal 124. For example, when the interface channel in the interface channel(s) 132 (one or more) separates from the drain terminal 124, this may impede the ability of current to flow from the interface channel to the drain terminal 124. This means that even when the semiconductor device 120 is activated such that current flows through the first portion 134 and the second portion 136 of the semiconductor material, deterioration at one or more of the interface channels may reduce the ability of current to flow through the semiconductor device.

[0036] The sensor signal generated by the electrical sensor 116 may indicate degradation along or proximate to the sensor current path corresponding to the electrical sensor 116. For example, the sensor signal generated by the electrical sensor 116 may indicate one or more electrical parameter values corresponding to the sensor current path. The one or more electrical parameter values may include one or more resistance values, one or more voltage values, one or more current values, or any combination thereof. A change in the one or more electrical parameter values indicated by the sensor signal may correspond to the formation of degradation along the sensor current path. For example, the resistance corresponding to the sensor current path may increase as degradation forms along the sensor current path. The voltage drop corresponding to the sensor current path may increase as degradation forms along the sensor current path. The magnitude of the current flowing through the sensor current path may decrease in response to the formation of degradation along the sensor current path.

[0037] The degradation sensed by the degradation monitoring circuit 110 is not limited to delamination between the (one or more) interface channels 132 and the source terminal 122 and delamination between the (one or more) interface channels 132 and the drain terminal 124. The degradation monitoring circuit 110 may be configured to sense degradation at any point along the sensor current path corresponding to the electrical sensor 116. For example, delamination or other degradation may occur between the (one or more) interface channels 132 and the first portion 134 of the semiconductor material or between the (one or more) interface channels 132 and the second portion 136 of the semiconductor material. Delamination or other degradation may additionally or alternatively occur within the source terminal 122, within the drain terminal 124, within the (one or more) interface channels 132, within the first portion 134 of the semiconductor material, or within the second portion 136 of the semiconductor material. In any case, the degradation monitoring circuit 110 may detect degradation along the sensor current path corresponding to the electrical sensor 116 based on one or more parameters sensed by the electrical sensor 116.

[0038] In some examples, one or more sensor current paths corresponding to the electrical sensor 116 may pass through the interface layer 130 of the semiconductor device 120. For example, the sensor current path may extend from the electrical sensor 116 to the first portion 134 of the semiconductor material, pass through the first portion 134 of the semiconductor material to a first interface channel among the (one or more) interface channels 132, pass through the first interface channel to the drain terminal 124, pass through the drain terminal 124 to a second interface channel among the (one or more) interface channels 132, and return to the electrical sensor 116 via the second portion 136 of the semiconductor material.

[0039] The sensor current path is not limited to passing through the drain terminal 124. In some examples, the sensor current path of system 100 can extend from the electrical sensor 116 to the first portion 134 of the semiconductor material, pass through the first portion of the semiconductor material 134 to the third interface channel in the (one or more) interface channels 132, pass through the third interface channel to the source terminal 122, pass through the source terminal 122 to the fourth interface channel in the (one or more) interface channels 132, and return to the electrical sensor 116 via the second portion 136 of the semiconductor material. Between the first portion 134 and the second portion 136 of the semiconductor material, one or more other current paths may exist through 130, which pass through the (one or more) interface channels 132 and one of the source terminal 122 and the drain terminal 124.

[0040] In some examples, system 100 may include more than one sensor current path corresponding to the electrical sensor 116. That is, the electrical sensor 116 may be configured to detect degradation along more than one sensor current path. When there are more than one sensor current paths corresponding to the electrical sensor 116, this may allow the degradation monitoring circuit 110 to detect whether there is degradation at each of a set of locations within the semiconductor device. For example, when the first sensor current path passes through the drain terminal 124 and the second sensor current path passes through the source terminal 122, the degradation monitoring circuit 110 can determine whether there is degradation at the drain terminal 124 and / or the interface channel connected to the drain terminal 124, and determine whether there is degradation at the source terminal 122 and / or the interface channel connected to the source terminal 122.

[0041] The electrical sensor 116 can generate an electrical signal and output the electrical signal to the semiconductor device 120. The electrical sensor 116 can output the electrical signal via the sensor current path through the semiconductor device 120 and receive the electrical signal from the semiconductor device 120 as the electrical signal travels through the sensor current path. The electrical sensor 116 can generate a sensor signal based on the electrical signal output by the electrical sensor 116 via the sensor current path and received via the sensor current path. The processing circuitry 112 of the degradation monitoring circuit 110 can determine one or more electrical parameter values based on the sensor signal. These one or more electrical parameter values can indicate that one or more parameter values can include resistance, voltage, current, other electrical parameters, or any combination thereof.

[0042] The processing circuit device 112 of the degradation monitoring circuit 110 can determine whether there is degradation of the material at one or more of the interface channels 132 based on one or more parameter values determined by the processing circuit device 112. For example, one or more of the interface channels 132 can be located along a sensor current path corresponding to the electrical sensor 116. Degradation at one or more of the interface channels 132 located along the sensor current path corresponding to the electrical sensor 116 may affect one or more parameter values determined based on the electrical signals output and received by the electrical sensor 116. For example, compared to an example where there is no degradation at one or more of the interface channels, degradation at one or more of the interface channels 132 located along the sensor current path may cause an increase in the electrical parameter value detected by the electrical sensor 116.

[0043] In some examples, the degradation monitoring circuit 110 includes a comparator. The sensor signal generated by the electrical sensor 116 can indicate an electrical parameter value corresponding to one or more of the interface channels 132 along the sensor current path corresponding to the electrical sensor 116. The degradation monitoring circuit 110 is configured to use the comparator to compare the electrical parameter value with a baseline electrical parameter value. The degradation monitoring circuit 110 can determine whether there is degradation of the material at one or more of the interface channels based on comparing the electrical parameter value with the baseline electrical parameter value. In some examples, degradation at one or more of the interface channels may cause a larger electrical parameter value sensed by the electrical sensor 116 compared to the electrical parameter value sensed by the electrical sensor 116 when there is no degradation at one or more of the interface channels.

[0044] To determine whether there is degradation of the material at one or more of the interface channels along the sensor current path corresponding to the electrical sensor 166, the degradation monitoring circuit 110 is configured to: when the electrical parameter value sensed by the electrical sensor 116 is greater than the baseline electrical parameter value by more than a threshold parameter amount, determine that there is degradation of the material at one or more of the interface channels. The degradation monitoring circuit 110 is configured to: when the electrical parameter value sensed by the electrical sensor 116 is not greater than the baseline electrical parameter value by more than a threshold parameter amount, determine that there is no degradation of the material at one or more of the interface channels.

[0045] The processing circuit device 112 of the degradation monitoring circuit 110 may be configured to output information indicating whether there is degradation of the material in response to determining whether there is degradation based on one or more parameters indicated by a sensor signal generated by the electrical sensor 116. In some examples, the processing circuit device 112 may output information indicating that there is no degradation. In some examples, the processing circuit device 112 may output information indicating that there is degradation. The processing circuit device 112 may output the information to indicate the location of the degradation detected by the degradation monitoring circuit 110. For example, the location may include one or more interface channels in the (one or more) interface channels 132, one or more boundaries between the (one or more) interface channels 132 and the terminals 122, 124, or one or more other locations.

[0046] In some examples, in response to the degradation monitoring circuit 110 determining that the degradation exceeds a threshold amount of degradation, the degradation monitoring circuit 110 may cause the semiconductor device 120 to transition from a normal operating mode to a safe operating mode. To cause the semiconductor device 120 to transition from a normal operating mode to a safe operating mode, the degradation monitoring circuit 110 may disconnect one or more of the (one or more) interface channels 132 in which there is degradation, such that current does not flow from the source terminal 122 through one or more interface channels to the drain terminal 124. In other words, the degradation monitoring circuit 110 may remove the degraded portion of the semiconductor device 120 from operation, such that the semiconductor device 120 is configured to continue operating.

[0047] The degradation monitoring circuit 110 may monitor the degradation of the semiconductor device 120 over an extended period of time. In some examples, the degradation monitoring circuit 110 is configured to monitor the degradation of the semiconductor device 120 over the entire operating life of the semiconductor device 120, such that the degradation monitoring circuit 110 may output a message when degradation is detected. In some cases, it may be beneficial to replace the semiconductor device 120 or repair the semiconductor device 120 when degradation is detected. Thus, by monitoring the degradation of the semiconductor device 120 over an extended period of time, the degradation monitoring circuit 110 may detect degradation when it occurs and quickly output information indicating the degradation.

[0048] In some examples, the semiconductor device 120 is configured to perform multiple switching cycles. Each of the multiple switching cycles includes an activation phase in which current flows between the source terminal 122 and the drain terminal 124. Each of the multiple switching cycles may include a deactivation phase in which the source terminal 122 is disconnected from the drain terminal 124. In some examples, a control signal received by the gate terminal 126 may cause the semiconductor device 120 to transition between the activation phase and the deactivation phase of the multiple switching cycles. For example, the voltage of the control signal received by the gate terminal 126 may determine whether current can flow between the source terminal 122 and the drain terminal 124 through the interface layer 130.

[0049] The electrical sensor 116 of the degradation monitoring circuit 110 may be configured to generate a parameter measurement value among a plurality of parameter measurement values during the deactivation phase of each of the multiple switching cycles of the semiconductor device. That is, each of the plurality of parameter measurements may indicate one or more parameter values measured during the deactivation phase of the corresponding switching cycle among the multiple switching cycles. This means that the processing circuitry 112 of the degradation monitoring circuit 110 may be configured to determine whether there is degradation of the material along the sensor current path (e.g., at one or more interface channels along the sensor current path) based on each of the plurality of parameter measurements during the deactivation phase of the corresponding switching cycle.

[0050] The gate driver circuit 140 may be configured to deliver a control signal to the gate terminal 126. In some examples, the gate driver circuit 140 is configured to deliver the control signal to the gate terminal 126 to cause the semiconductor device 120 to perform multiple switching cycles. In some examples, the control signal delivered by the gate driver circuit 140 may control the duty cycle of the semiconductor device 120 and / or one or more other aspects of the operation of the semiconductor device 120. In some examples, a controller ( Figure 1 (not shown in the figure) may control the gate driver circuit 140 to output a control signal to the gate terminal 126.

[0051] In some examples, the gate terminal 126 can be configured to control which of the interface channels 132 conduct current when the semiconductor device 120 is turned on. In response to the semiconductor device 120 operating in a normal operating mode, current can flow through each of the interface channels 132 when the semiconductor device 120 is turned on. In response to determining that there is degradation of the material at one or more of the interface channels 132, the degradation monitoring circuit 110 can cause the semiconductor device 120 to transition from the normal operating mode to a safe operating mode. In the safe operating mode, the semiconductor device 120 can disconnect one or more of the interface channels 132 such that current does not flow through the one or more degraded interface channels. In the safe operating mode, current can flow through the interface channels in the one or more interface channels 132 that are separate from the one or more degraded interface channels.

[0052] To disconnect one or more of the interface channels 132 in the presence of degradation, the gate terminal 126 can receive a control signal from the gate driver circuit 140 that causes the gate terminal 126 to disconnect the one or more interface channels. In some examples, the gate terminal 126 can control whether current flows through one or more of the interface channels 132 with degradation independent of whether current flows through one or more of the interface channels 132 without degradation. This can allow the gate terminal 126 to disconnect one or more interface channels in response to determining that there is degradation at one or more of the interface channels. When one or more of the interface channels are disconnected, the semiconductor device 120 can operate in the safe operating mode. When all of the one or more interface channels 132 are connected such that all of the one or more interface channels 132 conduct when the semiconductor device 120 is turned on, the semiconductor device 120 can operate in the normal operating mode.

[0053] Figure 2 is a conceptual diagram illustrating a system 200 including an electrical sensor 216 with a degradation monitoring circuit and an example sensor current path 217 through a semiconductor device. As Figure 2 shown, the system 200 can include an electrical sensor 216, a drain terminal 224, a transition layer 229, and an interface layer 230. The interface layer 230 includes interface channels 233A - 233D (collectively referred to as "interface channels 233"), a first portion 234 of semiconductor material, and a second portion 236 of semiconductor material.

[0054] The electrical sensor 216 can be Figure 1Example of the electrical sensor 116. The drain terminal 224 can be Figure 1 Example of the drain terminal 124 of Figure 1 Example of the interface layer 130 of Figure 1 Example of the (one or more) interface channels 132 of Figure 1 Example of the first portion 134 of the semiconductor material of Figure 1 Example of the second portion 136 of the semiconductor material of

[0055] In some examples, the drain terminal 224, the transition layer 229, and the interface layer 230 including the interface channel 233, the first portion 234 of the semiconductor material, and the second portion 236 of the semiconductor material can be part of a semiconductor device that further includes Figure 2 One or more components not shown in Figure 2 The semiconductor device of Figure 2 can include a source terminal, a gate terminal, one or more interface channels, and Figure 2 One or more other components not shown in Figure 1 That is, the semiconductor device of Figure 1 can be an example of the semiconductor device 120 of Figure 2 but one or more components of the semiconductor device 120 shown in

[0056] In Figure 2 the example, when the semiconductor device is activated, current can flow from the source terminal to the drain terminal 224 via the interface layer 230. For example, when the semiconductor device is activated, the current can be configured to travel from the source terminal through the first portion 234 of the semiconductor material and the second portion 236 of the semiconductor material to the drain terminal 224. When the semiconductor device is deactivated, current does not flow from the source terminal to the drain terminal 224 via the interface layer 230. In some examples, a control signal received by the gate terminal of the semiconductor device can control whether the semiconductor device is activated or deactivated.

[0057] The electrical sensor 216 can be configured to generate a sensor signal that indicates degradation at one or more locations along the sensor current path 217. As Figure 2As shown, the sensor current path 217 extends from the electrical sensor 216 to the first portion 234 of the semiconductor material. The sensor current path 217 extends through the first portion 234 of the semiconductor material to the interface channel 233A, and extends through the interface channel 233A via the boundary 218A to the drain terminal 224. In some examples, the interface channel 233A may include a conductor material, and in some examples, the first portion 234 of the semiconductor material may include a semiconductor material different from the conductor material of the interface channel 233A.

[0058] In some examples, the sensor signal generated by the electrical sensor 216 may indicate one or more electrical parameters corresponding to the sensor current path 217. For example, the one or more electrical parameters may include one or more resistance values (Ω), one or more voltage values (V), one or more current values (A), or any combination thereof. The electrical sensor 216 may generate a sensor signal to indicate the change of one or more electrical parameters over time. For example, the sensor signal may indicate the change of the resistance corresponding to the sensor current path 217 over time, the change of the voltage drop corresponding to the sensor current path 217 over time, the change of the magnitude of the current flowing through the sensor current path 217 over time, or any combination thereof.

[0059] The change of one or more electrical parameter values measured by the electrical sensor 216 over time may indicate whether there is degradation along the sensor current path 217. For example, an increase in the resistance corresponding to the sensor current path 217 may indicate degradation along the sensor current path 117. An increase in the voltage drop across one or more portions of the sensor current path 217 may indicate degradation along the sensor current path 217. A decrease in the magnitude of the current flowing through the sensor current path 217 may indicate degradation along the sensor current path 217.

[0060] In some examples, the drain terminal 224 includes a transition layer 229 at the end of the drain terminal 224. The transition layer 229 may include tungsten, a combination of tungsten and one or more other materials, or one or several materials different from tungsten. The sensor current path 217 may pass through the transition layer 229 to reach the body of the drain terminal 224. The sensor current path 217 may pass through the body of the drain terminal 224 and then pass through the transition layer 229 again via the boundary 218B to reach the interface channel 233B. The sensor current path 217 may pass through the interface channel 233B to reach the second portion 236 of the semiconductor material. In some examples, the interface channel 233B includes a conductor material, and in some examples, the second portion 236 of the semiconductor material may include a semiconductor material different from the conductor material of the interface channel 233B. The sensor current path 217 passes through the second portion 236 of the semiconductor material to reach the electrical sensor 216. This means that when the sensor current path 217 is as Figure 2 shown, the signal may pass through the sensor current path 217 clockwise.

[0061] Figure 2 The example is not limited to a signal passing through the sensor current path 217 clockwise. In some examples, the signal may pass through the sensor current path 217 counterclockwise. For example, the signal may travel from the electrical sensor 216 through the second portion 236 of the semiconductor material, pass through the interface channel 233B via the boundary 218B and the transition layer 229 to reach the drain terminal 224, pass through the body of the drain terminal 224 via the transition layer 229 and the boundary 218A to reach the interface channel 233A, and pass through the interface channel 233A and the first portion 234 of the semiconductor material to reach the electrical sensor 216.

[0062] Within the interface layer 230, there may be a space between the first portion 234 of the semiconductor material and the second portion 236 of the semiconductor material. Due to the space between the first portion 234 of the semiconductor material and the second portion 236 of the semiconductor material, this means that the sensor current path 217 may pass through the interface channel 233A, the drain terminal 224, and the interface channel 233B between the first portion 234 of the semiconductor material and the second portion 236 of the semiconductor material. This means that the space between the first portion 234 of the semiconductor material and the second portion 236 of the semiconductor material may cause the sensor current path 217 to include one or more locations where degradation may occur, such as the boundary 218A between the interface channel 233A and the drain terminal 224 and the boundary 218B between the interface channel 233B and the drain terminal 224.

[0063] The electrical sensor 216 can be configured to generate an electrical signal 252 for output through the sensor current path 217, and the electrical sensor 216 can receive an electrical signal 252', thus completing the sensor current path 117. The electrical signal 252 output by the electrical sensor 216 and the electrical signal 252' received by the electrical sensor 216 can indicate one or more characteristics of the sensor current path 217. The degradation monitoring circuit including the electrical sensor 216 can calculate one or more electrical parameters corresponding to the sensor current path 217 based on the electrical signal 252 output by the electrical sensor 216 and the electrical signal 252' received by the electrical sensor 216. For example, the degradation monitoring circuit including the electrical sensor 216 can determine one or more electrical parameter values corresponding to the sensor current path 217, one or more voltage values corresponding to the sensor current path 217, one or more current values corresponding to the sensor current path 217, one or more other electrical parameter values corresponding to the sensor current path 217, or any combination thereof.

[0064] Degradation along the sensor current path 217 may affect one or more electrical parameters calculated by the degradation monitoring circuit including the electrical sensor 216. This is because when the material separates to form a gap, these gaps may make it more difficult for the current to complete the sensor current path 217, thus affecting one or more electrical parameters associated with the electrical signal 252 output from the electrical sensor 216 via the sensor current path 217, and one or more electrical parameters of the electrical signal 252' received by the electrical sensor 216 via the sensor current path 217.

[0065] For example, when a gap or crack forms at the boundary 218A between the interface channel 233A and the drain terminal 224, this may cause a change in the electrical parameter value corresponding to the sensor current path 217 sensed by the electrical sensor 216, indicating the presence of degradation along the sensor current path 117. Additionally or alternatively, when a gap or crack forms at the boundary 218B between the interface channel 233B and the drain terminal 224, the electrical parameter value corresponding to the sensor current path 217 sensed by the electrical sensor 216 may change. For example, the resistance associated with the sensor current path 217 can increase in response to the formation of degradation along the sensor current path 217 at the boundary 218A or the boundary 218B. The voltage drop from point 219A to point 219B can increase in response to the formation of degradation along the sensor current path 217 at the boundary 218A or the boundary 218B. The current flowing through the sensor current path 217 can decrease in response to the formation of degradation along the sensor current path 217 at the boundary 218A or the boundary 218B.

[0066] The transition layer 229 can be configured to conduct electricity even when degradation occurs at the boundary 218A and / or the boundary 218B. In response to degradation occurring at the boundary 218A and / or the boundary 218B, current can flow through the sensor current path 217 between the interface channel 233A and the interface channel 233B via the transition layer 229. However, the resistance of the sensor current path 217 is greater when degradation exists at the boundary 218A and / or the boundary 218B compared to the resistance of the sensor current path 117 when there is no degradation at the boundary 218A and the boundary 218B. This is the case even when the transition layer 229 conducts electricity in the presence of degradation.

[0067] Degradation may occur at the bottlenecks at the boundaries between materials and / or at the boundaries between components. For example, degradation may occur at the boundary 218A between the interface channel 233A and the drain terminal 224, at the interface 218B between the interface channel 233B and the drain terminal 224, and at one or more other boundaries. This is because the boundary can represent a bottleneck where wear may occur when using a semiconductor. In some examples, the semiconductor device can be configured such that the sensor current path 217 passes through the area where degradation may occur. For example, the semiconductor device can be configured such that there is a space between the semiconductor material 234 and the second portion 236 of the semiconductor material between the interface channel 233A and the interface channel 233B. This can ensure that the sensor current path 217 passes through the interface channel 233A, the drain terminal 224, and the interface channel 233A, including the boundary 218A between the interface channel 233A and the drain terminal 224 and the boundary 218B between the interface channel 233B and the drain terminal 224.

[0068] The degradation monitoring circuit including the electrical sensor 216 is not limited to detecting degradation at the boundaries 218A and 218B. The degradation monitoring circuit including the electrical sensor 216 can detect degradation at any position along the sensor current path 217. For example, degradation may occur within the first portion 234 of the semiconductor material, within the interface channel 233A, within the drain terminal 224, within the interface channel 233B, within the second portion 236 of the semiconductor material, or any combination thereof. In some examples, degradation may occur at the boundary between the first portion 234 of the semiconductor material and the interface channel 233A and / or at the boundary between the second portion 236 of the semiconductor material and the interface channel 233B.

[0069] Figure 2The illustrated sensor current path 217 is not the only possible sensor current path corresponding to the degradation monitoring circuit including the electrical sensor 216. In some examples, in addition to or instead of the sensor current path 217, the electrical sensor 216 may be connected to one or more sensor current paths. For example, one or more sensor current paths may exist through the interface layer 230 and the source terminal ( Figure 2 not illustrated in Figure 2 . One or more sensor current paths may exist through the interface layer 230 and other locations of the drain terminal 224 not illustrated in

[0070] In some cases, the system 200 may include one or more interface channels that are not illustrated as Figure 2 a part of the interface channel 233. For example, the semiconductor device may include the interface channel 233 connected to the drain terminal 224 via the transition layer 229, one or more additional interface channels connected to the drain terminal 224 via the transition layer 229, and one or more interface channels connected to the Figure 2 source terminal not illustrated in

[0071] The electrical sensor 216 may be configured to perform a series of degradation measurements to monitor degradation over a period of time. For example, the electrical sensor 216 may be configured to perform a degradation measurement in a degradation measurement sequence during each switching cycle in a sequence of switching cycles. In some examples, each switching cycle in the sequence of switching cycles may include an activation phase and a deactivation phase. The electrical sensor 216 may perform a degradation measurement during the deactivation phase of each switching cycle in the sequence of switching cycles.

[0072] In some examples, a degradation monitoring circuit including the electrical sensor 216 can perform one or more actions in response to determining that degradation exists at one or more interface channels (e.g., at the boundaries 218A and / or 218B). For example, the degradation monitoring circuit can output information indicating the existence of material degradation at the boundaries 218A and / or 218B. Additionally or alternatively, the degradation monitoring circuit can cause the semiconductor device to transition from a normal operating mode to a safe operating mode by disconnecting the interface channels 233A and / or 233B, such that when the semiconductor device is turned on, current does not flow from the source terminal through the interface channels 233A and / or 233B to the drain terminal 224. That is, in response to detecting degradation at the boundaries 218A and / or 218B, the semiconductor device can remove the interface channels 233A and / or 233B from the operation of the semiconductor device while allowing the semiconductor device to continue operating. For example, when the semiconductor device operates according to the safe operating mode, current can flow through one or more interface channels other than the interface channels 233A and / or 233B when the semiconductor device is turned on.

[0073] Figure 3 is a graph 300 showing the gate voltage and temperature of a semiconductor device according to the present disclosure over time. As Figure 3 shown, the graph 300 includes a first plot 310 of the gate voltage of the semiconductor device over a period of time. The graph 300 also includes a second plot 320 of the temperature of one or more materials of the semiconductor device over a period of time.

[0074] The first plot 310 can represent the gate voltage of the semiconductor device (e.g., Figure 1 semiconductor device 120) during a first switching cycle and a second switching cycle after the first switching cycle. The first switching cycle includes a first activation phase 312A extending from T1 to T2 and a first deactivation phase 314A extending from T2 to T3. During the first activation phase 312A, the gate voltage applied to the gate terminal 126 of the semiconductor device 120 is a high voltage (+V). During the first deactivation phase 314A, the gate voltage applied to the gate terminal 126 of the semiconductor device 120 is a low voltage (0V). During the first activation phase 312A, current can flow from the source terminal 122 through the semiconductor device 120 via the interface layer 130 to the drain terminal 124. During the first deactivation phase 314A, current does not flow from the source terminal 122 through the semiconductor device 120 via the interface layer 130 to the drain terminal 124.

[0075] During the second activation phase 312B extending from T3 to T4, the gate voltage applied to the gate terminal 126 of the semiconductor device 120 is a high voltage (+V). During the second deactivation phase 314B extending from T4, the gate voltage applied to the gate terminal 126 of the semiconductor device 120 is a low voltage (0V). During the second activation phase 312B, current can flow from the source terminal 122 through the semiconductor device 120 via the interface layer 130 to the drain terminal 124. During the second deactivation phase 314B, current does not flow from the source terminal 122 through the semiconductor device 120 via the interface layer 130 to the drain terminal 124.

[0076] When current flows through the semiconductor device 120, the temperature of one or more materials of the semiconductor device 120 can increase. For example, during the first activation phase 312A and the second activation phase 312B, current can flow through the conductor materials of the source terminal 122, the drain terminal 123, and the (one or more) interface channels 132, and through the first portion 134 of the semiconductor material and the second portion 136 of the semiconductor material. When current does not flow through the semiconductor device 120, the temperature of one or more materials of the semiconductor device 120 can decrease during the first deactivation phase 314A and the second deactivation phase 314B.

[0077] The second curve 320 can represent the temperature of the semiconductor device 120 during the first switching cycle and the second switching cycle. For example, the first heating phase 322A corresponds to the first activation phase 312A, the first cooling phase 324A corresponds to the first deactivation phase 314A, the second heating phase 322B corresponds to the second activation phase 312B, and the second cooling phase 324B corresponds to the second deactivation phase 314B. As Figure 3 shown, during the activation phase, since current flows through the semiconductor device 120, the temperature of the semiconductor device 120 increases with time, while during the deactivation phase, since current does not flow through the semiconductor device 120, the temperature decreases with time.

[0078] Temperature fluctuations (such as the ambient temperature (T AMB ) shown in the second curve 320 and the peak temperature (T Peak) fluctuations between) may cause deterioration of the semiconductor device 120. Over time, temperature fluctuations may apply stress to the materials of the semiconductor device 120. Over time, the stress may cause delamination of the materials. In some examples, delamination may occur at the (one or more) interface channels 132 of the semiconductor device 120 and at the locations where the (one or more) interface channels 132 are connected to the source terminal 122 and / or the drain terminal 124. In some examples, the deterioration monitoring circuit 110 may perform deterioration measurements during the deactivation phase of each switching cycle. For example, the deterioration monitoring circuit 110 may perform deterioration measurements during the first deactivation phase 314A and the second deactivation phase 314B.

[0079] Figure 4 is a conceptual diagram according to the concepts of the present disclosure, which includes a system 400 for monitoring delamination by comparing the electrical parameters of areas where delamination is likely to occur with the electrical parameters of areas where delamination is less likely to occur. As Figure 4 shown, the system 400 includes a comparator 402, which includes a first input 404 and a second input 406, a first terminal 410, a second terminal 420, and an interface layer 430 between the first terminal 410 and the second terminal 420. The system 400 includes a first sensor node 442 and a second sensor node 444. In some examples, the first terminal 410 may represent one of the drain terminal and the source terminal of the semiconductor device, and the second terminal 420 represents the other of the source terminal and the drain terminal.

[0080] In some examples, the first sensor node 442 may be located near the center of the hot zone 450 where deterioration is likely to occur, and the second sensor node 444 may be located near the edge of the hot zone 450, where delamination is less likely to occur compared to the higher likelihood of deterioration at the center of the hot zone 450. The comparator 402 may receive a first signal from the first sensor node 442 via the first input 404 and a second signal from the second sensor node 444 via the second input 406. The comparator 402 may output a signal indicating the difference between the first signal and the second signal. When the difference between the first signal and the second signal is greater than a threshold difference, this may indicate the presence of deterioration near the first sensor node 442 at the center of the hot zone 450. In response to determining the presence of deterioration near the first sensor node 442, the system 400 may transition the semiconductor device to a safe operating mode.

[0081] Figure 5 is a graph 500 showing the resistance of a set of sensor current paths of a deterioration monitoring circuit within a sequence of switching cycles of a semiconductor device according to the present disclosure. As Figure 5As shown, graph 500 includes a first curve 512, a second curve 514, a third curve 516, and a fourth curve 518. In some examples, each of the first curve 512, the second curve 514, the third curve 516, and the fourth curve 518 may correspond to a sensor current path through a semiconductor device. As Figure 5 shown, the resistance of each of the first curve 512, the second curve 514, the third curve 516, and the fourth curve 518 begins to increase between 1.5E+07 switching cycles and 2.0E+07 switching cycles. In some examples, a 20% increase in resistance may indicate degradation of the semiconductor device.

[0082] In some examples, even if there is degradation that causes an increase in the resistance of the first curve 512, the second curve 514, the third curve 516, and the fourth curve 518, the semiconductor device may continue to operate. That is, the degradation does not cause a complete failure of the semiconductor device, but may cause the semiconductor device to operate at a reduced efficiency. This means that it can be beneficial to operate the semiconductor device in a safe operating mode when there is degradation, in order to provide time to replace the semiconductor device before it fails completely. Operating the semiconductor device in a safe operating mode may involve removing a portion of the semiconductor device with degradation from operation. In other words, when the semiconductor device is turned on, the portion of the semiconductor device that does not include the degradation can conduct electricity, while no current flows through the portion that includes the degradation.

[0083] Figure 6 is a graph showing graph 600 indicating a change in current when delamination occurs according to the present disclosure. As Figure 6 shown, graph 600 includes a first current signal 612, a second current signal 614, and a spike 618 in the second current signal 614. In some examples, when delamination occurs at the sensor current path of the semiconductor device, spike 618 appears. The electrical sensor of the degradation monitoring circuit can detect degradation based on determining that the first current signal 612 decreases and / or based on determining that the second current signal 614 increases. For example, the first current signal 612 decreases at time T, and the second current signal 614 increases at time T. Degradation may occur at time T, causing the first current signal 612 to decrease and causing the second current signal 614 to increase. This means that the degradation monitoring circuit can identify degradation based on detecting a decrease in the first current signal 612 and / or detecting an increase in the second current signal 614. The degradation monitoring circuit is not limited to detecting degradation based on current. The degradation monitoring circuit can detect degradation based on current, voltage, resistance, one or more other electrical parameters, or any combination thereof.

[0084] Figure 7FIG. is a flowchart illustrating example operations for determining whether degradation exists within a semiconductor device in accordance with one or more techniques of the present disclosure. Figure 7 With respect to Figure 1 system 100 of Figure 7 the techniques may be performed by different components of system 100 or by additional or alternative systems.

[0085] Degradation monitoring circuit 110 may generate a sensor signal (702) corresponding to one or more interface channels among (one or more) interface channels 132 of semiconductor device 120 using electrical sensor 116. When an electrical signal traverses the sensor current path, electrical sensor 116 may generate a sensor signal based on the electrical signal output via the sensor current path and the sensor signal received from the sensor current path. In some examples, the sensor signal may indicate one or more parameters such as resistance, voltage, current, or any combination thereof. One or more parameters may indicate whether degradation exists along the sensor current path.

[0086] Processing circuitry 112 of degradation monitoring circuit 110 may determine whether degradation of material exists at one or more of (one or more) interface channels 132 based on the sensor signal (704). For example, when the resistance indicated by the sensor signal exceeds a resistance threshold, when the voltage drop indicated by the sensor signal exceeds a voltage drop threshold, when the magnitude of the current associated with the sensor signal is lower than a current magnitude threshold, or any combination thereof, processing circuitry 112 may determine that degradation exists. Processing circuitry 112 of degradation monitoring circuit 110 may output information indicating whether degradation of material exists at one or more of (one or more) interface channels 132 (706).

[0087] Processing circuitry 112 of degradation monitoring circuit 110 may determine whether to transition semiconductor device 120 from a normal operation mode to a safe operation mode based on whether degradation of material exists at one or more of (one or more) interface channels 132 (708). In the normal operation mode, current may flow from source terminal 122 of semiconductor device 120 via (one or more) interface channels 132 including the interface channel(s) having degradation to drain terminal 124 of semiconductor device 120. When there is no degradation in (one or more) interface channels 132, it may be beneficial for semiconductor device 120 to operate according to the normal operation mode such that semiconductor device 120 operates with maximum efficiency.

[0088] In response to detecting degradation at one or more of the interface channels 132, the processing circuitry 112 of the degradation monitoring circuit 110 may disconnect one or more of the interface channels such that current does not flow from the source terminal 122 to the drain terminal 124 via the one or more interface channels. In response to the degradation monitoring circuit 110 disconnecting one or more of the interface channels, the degradation monitoring circuit 110 may operate according to a safe operating mode. In the safe operating mode, current may flow from the source terminal 122 to the drain terminal 124 via an interface channel in the one or more interface channels 132 that is separate from the one or more interface channels where material degradation exists. In the safe operating mode, the semiconductor device 120 may continue to operate even if degradation exists at one or more of the interface channels. This may provide time to replace the semiconductor device 120 before the semiconductor device 120 fails completely.

[0089] The following numbered clauses may demonstrate one or more aspects of the present disclosure.

[0090] Clause 1: A system comprising a semiconductor device, the semiconductor device including: a source terminal; a drain terminal; and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The system further includes a degradation monitoring circuit including an electrical sensor, wherein the degradation monitoring circuit is configured to: generate a sensor signal corresponding to one or more of the plurality of interface channels using the electrical sensor; determine whether there is material degradation at one or more of the plurality of interface channels based on the sensor signal; and output information indicating whether there is material degradation at one or more of the plurality of interface channels.

[0091] Clause 2: The system according to clause 1, wherein the degradation monitoring circuit further includes a comparator, wherein the sensor signal indicates an electrical parameter value corresponding to one or more of the interface channels, and wherein the degradation monitoring circuit is further configured to: compare the electrical parameter value with a baseline electrical parameter value using the comparator; and determine whether there is material degradation at one or more of the interface channels based on comparing the electrical parameter value with the baseline electrical parameter value.

[0092] Clause 3: The system according to clause 2, wherein, to determine whether there is material degradation at one or more of the interface channels, the degradation monitoring circuit is configured to: determine that there is material degradation at one or more of the interface channels when the electrical parameter value is greater than a threshold parameter amount than the baseline electrical parameter value; and determine that there is no material degradation at one or more of the interface channels when the electrical parameter value is not greater than a threshold parameter amount than the baseline electrical parameter value.

[0093] Clause 4: The system according to any one of Clauses 1 to 3, wherein the degradation monitoring circuit is further configured to: in response to determining that there is degradation of the material at one or more interface channels, cause the semiconductor device to transition from a normal operating mode to a safe operating mode, wherein the magnitude of a first current flowing from a source terminal to a drain terminal across one or more interface channels in response to the semiconductor device operating in the normal operating mode is greater than the magnitude of a second current flowing from the source terminal to the drain terminal across one or more interface channels in response to the semiconductor device operating in the safe operating mode.

[0094] Clause 5: The system according to Clause 4, wherein the one or more interface channels include a first set of interface channels, and wherein, in order to cause the semiconductor device to transition from the normal operating mode to the safe operating mode, the degradation monitoring circuit is configured to: disconnect the first set of interface channels such that current flows from the source terminal to the drain terminal via a second set of interface channels among the plurality of interface channels and does not flow through the first set of interface channels where there is degradation of the material, wherein the second set of interface channels is separate from the first set of interface channels.

[0095] Clause 6: The system according to any one of Clauses 1 to 5, wherein the interface layer further includes: a first portion of semiconductor material; a second portion of semiconductor material; a first interface channel among the plurality of interface channels connected to the first portion of semiconductor material, wherein the first interface channel includes conductor material; and a second interface channel among the plurality of interface channels connected to the second portion of semiconductor material, wherein the first interface channel includes conductor material, wherein an electrical sensor is connected to the first portion of semiconductor material and the second portion of semiconductor material, and wherein the degradation monitoring circuit is configured to generate a sensor signal corresponding to the first interface channel and the second interface channel using the electrical sensor.

[0096] Clause 7: The system according to Clause 6, wherein the first interface channel among the plurality of interface channels connects the source terminal to the first portion of semiconductor material, wherein the second interface channel among the plurality of interface channels connects the source terminal to the second portion of semiconductor material, and wherein the degradation monitoring circuit is configured to generate a sensor signal using the electrical sensor based on sensor signals traveling from the first portion of semiconductor material to the source terminal via the first interface channel and from the source terminal to the second portion of semiconductor material via the second interface channel.

[0097] Clause 8: The system according to any one of Clauses 6 to 7, wherein a first interface channel among the plurality of interface channels connects the drain terminal to a first portion of the semiconductor material, a second interface channel among the plurality of interface channels connects the drain terminal to a second portion of the semiconductor material, and wherein the degradation monitoring circuit is configured to generate a sensor signal using an electrical sensor based on a sensor signal that travels from the first portion of the semiconductor material to the drain terminal via the first interface channel and travels from the drain terminal to the second portion of the semiconductor material via the second interface channel.

[0098] Clause 9: The system according to any one of Clauses 6 to 8, wherein the semiconductor material comprises silicon and wherein the conductor material comprises copper.

[0099] Clause 10: The system according to any one of Clauses 6 to 9, wherein the semiconductor material comprises any one or a combination of silicon, gallium arsenide, gallium nitride, germanium, and silicon carbide, and wherein the conductor material comprises any one or a combination of copper, silver, aluminum, gold, and graphite.

[0100] Clause 11: The system according to any one of Clauses 1 to 10, wherein the sensor signal is one of a plurality of sensor signals, wherein the semiconductor device is configured to perform a plurality of switching cycles, wherein each switching cycle of the plurality of switching cycles includes an activation phase in which current flows between the source terminal and the drain terminal, wherein each switching cycle of the plurality of switching cycles includes a deactivation phase in which the source terminal and the drain terminal are disconnected, and wherein the degradation monitoring circuit is configured to: generate a corresponding sensor signal among the plurality of sensor signals using an electrical sensor during the deactivation phase of each switching cycle of the plurality of switching cycles; and determine whether there is degradation of the material at one or more of the plurality of interface channels based on each sensor signal among the plurality of sensor signals.

[0101] Clause 12: The system according to Clause 11, wherein the system further comprises a gate driver circuit, wherein the semiconductor device further comprises a gate terminal, and wherein the gate driver circuit is configured to: deliver a control signal to the gate terminal to control the semiconductor device to perform a plurality of switching cycles, wherein the current flowing between the source terminal and the drain terminal during the activation phase of each switching cycle of the plurality of switching cycles causes degradation of the material at one or more of the interface channels.

[0102] Clause 13: The system according to any one of Clauses 1 to 12, wherein the degradation monitoring circuit further includes a comparator, wherein the electrical sensor represents a first electrical sensor, wherein the sensor signal represents a first sensor signal, wherein one or more interface channels include a first one or more interface channels, and wherein the degradation monitoring circuit is further configured to: generate a second sensor signal corresponding to a second one or more interface channels in a plurality of interface channels using a second electrical sensor; compare the first sensor signal with the second sensor signal using the comparator; and determine whether there is degradation of the material at the first one or more interface channels based on comparing the first sensor signal with the second sensor signal.

[0103] Clause 14: A degradation monitoring circuit includes an electrical sensor, wherein the degradation monitoring circuit is configured to: generate a sensor signal corresponding to one or more interface channels in a plurality of interface channels of a semiconductor device using the electrical sensor, wherein the semiconductor device includes: a source terminal; a drain terminal; and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The degradation monitoring circuit is further configured to determine whether there is degradation of the material at one or more interface channels based on the sensor signal; and output information indicating whether there is degradation of the material at one or more interface channels.

[0104] Clause 15: The degradation monitoring circuit according to Clause 14, further including a comparator, wherein the sensor signal indicates an electrical parameter value corresponding to one or more interface channels, and wherein the degradation monitoring circuit is further configured to: compare the electrical parameter value with a baseline electrical parameter value using the comparator; and determine whether there is degradation of the material at one or more interface channels based on comparing the electrical parameter value with the baseline electrical parameter value.

[0105] Clause 16: The degradation monitoring circuit according to Clause 15, wherein to determine whether there is degradation of the material at one or more interface channels, the degradation monitoring circuit is configured to: determine that there is degradation of the material at one or more interface channels when the electrical parameter value is greater than the threshold parameter quantity than the baseline electrical parameter value; and determine that there is no degradation of the material at one or more interface channels when the electrical parameter value is not greater than the threshold parameter quantity than the baseline electrical parameter value.

[0106] Clause 17: The deterioration monitoring circuit according to any one of Clauses 14 to 16, wherein the deterioration monitoring circuit is further configured to: in response to determining the deterioration of the material at one or more interface channels, cause the semiconductor device to transition from the normal operation mode to the safe operation mode, wherein the magnitude of the first current flowing from the source terminal to the drain terminal across one or more interface channels in response to the semiconductor device operating in the normal operation mode is greater than the magnitude of the second current flowing from the source terminal to the drain terminal across one or more interface channels in response to the semiconductor device operating in the safe operation mode.

[0107] Clause 18: The deterioration monitoring circuit according to Clause 17, wherein one or more interface channels include a first set of interface channels, and wherein, in order to cause the semiconductor device to transition from the normal operation mode to the safe operation mode, the deterioration monitoring circuit is configured to: disconnect the first set of interface channels, such that current flows from the source terminal to the drain terminal via a second set of interface channels among the plurality of interface channels, without flowing through the first set of interface channels where the material deterioration exists, wherein the second set of interface channels is separate from the first set of interface channels.

[0108] Clause 19: The deterioration monitoring circuit according to any one of Clauses 14 to 18, wherein the electrical sensor is connected to a first portion of the semiconductor material of the interface layer and a second portion of the semiconductor material of the interface layer, and wherein the interface layer further includes: a first portion of the semiconductor material; a second portion of the semiconductor material; a first interface channel among the plurality of interface channels connected to the first portion of the semiconductor material, wherein the first interface channel includes a conductor material; and a second interface channel among the plurality of interface channels connected to the second portion of the semiconductor material, wherein the first interface channel includes a conductor material, and wherein the deterioration monitoring circuit is configured to generate a sensor signal corresponding to the first interface channel and the second interface channel using the electrical sensor.

[0109] Clause 20: The deterioration monitoring circuit according to Clause 19, wherein the first interface channel among the plurality of interface channels connects the source terminal to the first portion of the semiconductor material, the second interface channel among the plurality of interface channels connects the source terminal to the second portion of the semiconductor material, and wherein the deterioration monitoring circuit is configured to generate a sensor signal using the electrical sensor based on the sensor signal traveling from the first portion of the semiconductor material to the source terminal via the first interface channel and traveling from the source terminal to the second portion of the semiconductor material via the second interface channel.

[0110] Clause 21: The degradation monitoring circuit according to any one of Clauses 19 to 20, wherein a first interface channel among the plurality of interface channels connects the drain terminal to a first portion of the semiconductor material, a second interface channel among the plurality of interface channels connects the drain terminal to a second portion of the semiconductor material, and wherein the degradation monitoring circuit is configured to generate a sensor signal using an electrical sensor based on a sensor signal that travels from the first portion of the semiconductor material to the drain terminal via the first interface channel and travels from the drain terminal to the second portion of the semiconductor material via the second interface channel.

[0111] Clause 22: The degradation monitoring circuit according to any one of Clauses 14 to 21, wherein the sensor signal is one of a plurality of sensor signals, and wherein the degradation monitoring signal is further configured to: generate the sensor signal among the plurality of sensor signals using an electrical sensor during a deactivation phase of each of the plurality of switching cycles, wherein each of the plurality of switching cycles includes an activation phase in which current flows between the source terminal and the drain terminal of the semiconductor device, and each of the plurality of switching cycles includes a deactivation phase in which the source terminal and the drain terminal of the semiconductor device are disconnected; and determine whether there is degradation of the material at one or more of the interface channels based on each of the plurality of sensor signals.

[0112] Clause 23: The degradation monitoring circuit according to any one of Clauses 14 to 22, wherein the degradation monitoring circuit further includes a comparator, wherein the electrical sensor represents a first electrical sensor, the sensor signal represents a first sensor signal, the one or more interface channels include a first one or more interface channels, and wherein the degradation monitoring circuit is further configured to: generate a second sensor signal corresponding to a second one or more interface channels among the plurality of interface channels using a second electrical sensor; compare the first sensor signal with the second sensor signal using the comparator; and determine whether there is degradation of the material at the first one or more interface channels based on comparing the first sensor signal with the second sensor signal.

[0113] A method includes: generating, by a degradation monitoring circuit, a sensor signal corresponding to one or more interface channels among a plurality of interface channels of a semiconductor device using an electrical sensor, wherein the semiconductor device includes: a source terminal; a drain terminal; and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. The method further includes determining, by the degradation monitoring circuit, whether there is degradation of the material at one or more of the interface channels based on the sensor signal; and outputting, by the degradation monitoring circuit, information indicating whether there is degradation of the material at one or more of the interface channels.

[0114] The techniques described in this disclosure may be implemented, at least in part, in hardware, software, firmware, or any combination thereof. For example, aspects of the described techniques may be implemented within one or more processors, including one or more microprocessors, DSPs, ASICs, FPGAs, or any other equivalent integrated or discrete logic circuitry, as well as any combination of such components. The term "processor" or "processing circuitry" generally may refer to any of the foregoing logic circuitry, alone or in combination with other logic circuitry, or to any other equivalent circuitry. A control unit including hardware may also perform one or more of the techniques of this disclosure.

[0115] Such hardware, software, and firmware may be implemented within the same device or in separate devices to support the various operations and functions described in this disclosure. Additionally, any of the foregoing units, modules, or components may be implemented together or separately as discrete but interoperable logic devices. Describing different features as modules or units is intended to highlight different functional aspects and does not necessarily imply that such modules or units must be implemented by separate hardware or software components. Rather, the functions associated with one or more modules or units may be performed by separate hardware or software components, or integrated within common or separate hardware and software components.

[0116] The techniques described in this disclosure may also be embodied or encoded in a computer-readable medium, such as a computer-readable storage medium, that includes instructions. The instructions embedded or encoded in the computer-readable storage medium may cause a programmable processor or other processor to perform the method, for example, when the instructions are executed. The computer-readable storage medium may include RAM, ROM, programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), EEPROM, flash memory, a hard disk, a CD-ROM, a floppy disk, a cassette tape, magnetic media, optical media, or other computer-readable media.

[0117] Various examples have been described. These and other examples are within the scope of the following claims.

Claims

1. A system, comprising: A semiconductor device, comprising: A source terminal; A drain terminal; and An interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels; and A degradation monitoring circuit including an electrical sensor, wherein the degradation monitoring circuit is configured to: Generate a sensor signal corresponding to one or more of the plurality of interface channels using the electrical sensor; Determine whether there is degradation of a material at the one or more of the plurality of interface channels based on the sensor signal; and Output information indicating whether there is the degradation of the material at the one or more of the plurality of interface channels.

2. The system according to claim 1, wherein the degradation monitoring circuit further includes a comparator, wherein the sensor signal indicates an electrical parameter value corresponding to the one or more interface channels, and wherein the degradation monitoring circuit is further configured to: Compare the electrical parameter value with a baseline electrical parameter value using the comparator; and Determine whether there is the degradation of the material at the one or more interface channels based on comparing the electrical parameter value with the baseline electrical parameter value.

3. The system according to claim 2, wherein, in order to determine whether there is the degradation of the material at the one or more interface channels, the degradation monitoring circuit is configured to: Determine that there is the degradation of the material at the one or more interface channels when the electrical parameter value is greater than a threshold parameter amount than the baseline electrical parameter value; and Determine that there is no degradation of the material at the one or more interface channels when the electrical parameter value is not greater than the threshold parameter amount than the baseline electrical parameter value.

4. The system according to claim 1, wherein the degradation monitoring circuit is further configured to: Cause the semiconductor device to transition from a normal operating mode to a safe operating mode in response to determining that there is the degradation of the material at the one or more interface channels, wherein a magnitude of a first current flowing from the source terminal to the drain terminal across the one or more interface channels in response to the semiconductor device operating in the normal operating mode is greater than a magnitude of a second current flowing from the source terminal to the drain terminal across the one or more interface channels in response to the semiconductor device operating in the safe operating mode.

5. The system according to claim 4, wherein the one or more interface channels include a first set of interface channels, and wherein, in order to cause the semiconductor device to transition from the normal operating mode to the safe operating mode, the degradation monitoring circuit is configured to: Disconnect the first set of interface channels so that current flows from the source terminal to the drain terminal via a second set of interface channels among the plurality of interface channels without flowing through the first set of interface channels where there is the degradation of the material, wherein the second set of interface channels is separate from the first set of interface channels.

6. The system according to claim 1, wherein the interface layer further includes: A first portion of a semiconductor material; the second part of the semiconductor material; a first interface channel of the plurality of interface channels, connected to the first part of the semiconductor material, wherein the first interface channel comprises a conductor material; and a second interface channel of the plurality of interface channels, connected to the second part of the semiconductor material, wherein the second interface channel comprises a conductor material, wherein the electrical sensor is connected to the first part of the semiconductor material and the second part of the semiconductor material, and wherein the degradation monitoring circuit is configured to generate the sensor signal corresponding to the first interface channel and the second interface channel using the electrical sensor.

7. The system according to claim 6, wherein the first interface channel of the plurality of interface channels connects the source terminal to the first part of the semiconductor material, wherein the second interface channel of the plurality of interface channels connects the source terminal to the second part of the semiconductor material, and wherein the degradation monitoring circuit is configured to: using the electrical sensor, generate the sensor signal based on the sensor signal traveling from the first part of the semiconductor material to the source terminal via the first interface channel and traveling from the source terminal to the second part of the semiconductor material via the second interface channel.

8. The system according to claim 6, wherein the first interface channel of the plurality of interface channels connects the drain terminal to the first part of the semiconductor material, wherein the second interface channel of the plurality of interface channels connects the drain terminal to the second part of the semiconductor material, and wherein the degradation monitoring circuit is configured to: using the electrical sensor, generate the sensor signal based on the sensor signal traveling from the first part of the semiconductor material to the drain terminal via the first interface channel and traveling from the drain terminal to the second part of the semiconductor material via the second interface channel.

9. The system according to claim 6, wherein the semiconductor material comprises silicon, and wherein the conductor material comprises copper.

10. The system according to claim 6, wherein the semiconductor material comprises any one or a combination of silicon, gallium arsenide, gallium nitride, germanium, and silicon carbide, and wherein the conductor material comprises any one or a combination of copper, silver, aluminum, gold, and graphite.

11. The system according to claim 1, wherein the sensor signal is one of a plurality of sensor signals, wherein the semiconductor device is configured to perform a plurality of switching cycles, wherein each switching cycle of the plurality of switching cycles includes an activation phase in which current flows between the source terminal and the drain terminal, wherein each switching cycle of the plurality of switching cycles includes a deactivation phase in which the source terminal and the drain terminal are disconnected, and wherein the degradation monitoring circuit is configured to: during the deactivation phase of each switching cycle of the plurality of switching cycles, generate the corresponding sensor signal of the plurality of sensor signals using the electrical sensor; and Based on each of the plurality of sensor signals, determine whether there is deterioration of the material at the one or more interface channels among the plurality of interface channels.

12. The system according to claim 11, wherein the system further comprises a gate driver circuit, wherein the semiconductor device further comprises a gate terminal, and wherein the gate driver circuit is configured to: Deliver a control signal to the gate terminal to control the semiconductor device to perform the plurality of switching cycles, wherein the current flowing between the source terminal and the drain terminal during the activation phase of each of the plurality of switching cycles causes the deterioration of the material to exist at the one or more interface channels.

13. The system according to claim 1, wherein the deterioration monitoring circuit further comprises a comparator, wherein the electrical sensor represents a first electrical sensor, wherein the sensor signal represents a first sensor signal, wherein the one or more interface channels comprise a first one or more interface channels, and wherein the deterioration monitoring circuit is further configured to: Generate a second sensor signal corresponding to a second one or more interface channels among the plurality of interface channels using a second electrical sensor; Compare the first sensor signal with the second sensor signal using the comparator; and Based on comparing the first sensor signal with the second sensor signal, determine whether there is deterioration of the material at the first one or more interface channels.

14. A deterioration monitoring circuit, comprising an electrical sensor, wherein the deterioration monitoring circuit is configured to: Generate a sensor signal corresponding to one or more interface channels among a plurality of interface channels of a semiconductor device using the electrical sensor, wherein the semiconductor device comprises: A source terminal; A drain terminal; And An interface layer between the source terminal and the drain terminal, the interface layer comprising the plurality of interface channels; Determine whether there is deterioration of the material at the one or more interface channels based on the sensor signal; And Output information indicating whether there is deterioration of the material at the one or more interface channels among the plurality of interface channels.

15. The deterioration monitoring circuit according to claim 14, further comprising a comparator, wherein the sensor signal indicates an electrical parameter value corresponding to the one or more interface channels, and wherein the deterioration monitoring circuit is further configured to: Compare the electrical parameter value with a baseline electrical parameter value using the comparator; and Based on comparing the electrical parameter value with the baseline electrical parameter value, determine whether there is deterioration of the material at the one or more interface channels.

16. The deterioration monitoring circuit according to claim 14, wherein in order to determine whether there is deterioration of the material at the one or more interface channels, the deterioration monitoring circuit is configured to: When the electrical parameter value is greater than the baseline electrical parameter value by more than a threshold parameter amount, determine that there is deterioration of the material at the one or more interface channels; and When the value of the electrical parameter does not exceed the threshold parameter amount by more than the baseline electrical parameter value, it is determined that there is no degradation of the material at the one or more interface channels.

17. The degradation monitoring circuit according to claim 14, wherein the degradation monitoring circuit is further configured to: In response to determining that there is degradation of the material at the one or more interface channels, cause the semiconductor device to transition from a normal operating mode to a safe operating mode, wherein the magnitude of a first current flowing from the source terminal to the drain terminal across the one or more interface channels in response to the semiconductor device operating in the normal operating mode is greater than the magnitude of a second current flowing from the source terminal to the drain terminal across the one or more interface channels in response to the semiconductor device operating in the safe operating mode.

18. The degradation monitoring circuit according to claim 17, wherein the one or more interface channels include a first set of interface channels, and wherein, in order to cause the semiconductor device to transition from the normal operating mode to the safe operating mode, the degradation monitoring circuit is configured to: Disconnect the first set of interface channels such that current flows from the source terminal to the drain terminal via a second set of interface channels among the plurality of interface channels without flowing through the first set of interface channels where there is degradation of the material, wherein the second set of interface channels is separate from the first set of interface channels.

19. The degradation monitoring circuit according to claim 14, wherein the electrical sensor is connected to a first portion of the semiconductor material of the interface layer and a second portion of the semiconductor material of the interface layer, wherein the interface layer further includes: The first portion of the semiconductor material; The second portion of the semiconductor material; A first interface channel among the plurality of interface channels, connected to the first portion of the semiconductor material, wherein the first interface channel includes a conductor material; And A second interface channel among the plurality of interface channels, connected to the second portion of the semiconductor material, wherein the second interface channel includes a conductor material, and wherein the degradation monitoring circuit is configured to generate the sensor signal corresponding to the first interface channel and the second interface channel using the electrical sensor.

20. The degradation monitoring circuit according to claim 19, wherein the first interface channel among the plurality of interface channels connects the source terminal to the first portion of the semiconductor material, wherein the second interface channel among the plurality of interface channels connects the source terminal to the second portion of the semiconductor material, and wherein the degradation monitoring circuit is configured to: using the electrical sensor, generate the sensor signal based on sensor signals traveling from the first portion of the semiconductor material to the source terminal via the first interface channel and traveling from the source terminal to the second portion of the semiconductor material via the second interface channel.

21. The degradation monitoring circuit according to claim 19, wherein the first interface channel of the plurality of interface channels connects the drain terminal to a first portion of the semiconductor material, wherein the second interface channel of the plurality of interface channels connects the drain terminal to a second portion of the semiconductor material, and wherein the deterioration monitoring circuit is configured to: use the electrical sensor to generate the sensor signal based on the sensor signal that travels from the first portion of the semiconductor material to the drain terminal via the first interface channel and travels from the drain terminal to the second portion of the semiconductor material via the second interface channel.

22. The deterioration monitoring circuit according to claim 14, wherein the sensor signal is one of a plurality of sensor signals, and wherein the deterioration monitoring signal is further configured to: generate the sensor signal among the plurality of sensor signals using the electrical sensor during a deactivation phase of each of the plurality of switching cycles, wherein each of the plurality of switching cycles includes an activation phase in which current flows between the source terminal and the drain terminal of the semiconductor device, and wherein each of the plurality of switching cycles includes a deactivation phase in which the source terminal and the drain terminal of the semiconductor device are disconnected; and determine whether there is deterioration of the material at the one or more interface channels among the plurality of interface channels based on each of the plurality of sensor signals.

23. The deterioration monitoring circuit according to claim 14, wherein the deterioration monitoring circuit further includes a comparator, wherein the electrical sensor represents a first electrical sensor, wherein the sensor signal represents a first sensor signal, wherein the one or more interface channels include a first one or more interface channels, and wherein the deterioration monitoring circuit is further configured to: generate a second sensor signal corresponding to a second one or more interface channels among the plurality of interface channels using a second electrical sensor; compare the first sensor signal with the second sensor signal using the comparator; and determine whether there is deterioration of the material at the first one or more interface channels based on comparing the first sensor signal with the second sensor signal.

24. A method, comprising: generating, by a deterioration monitoring circuit, a sensor signal corresponding to one or more interface channels among a plurality of interface channels of a semiconductor device using an electrical sensor, wherein the semiconductor device includes: a source terminal; a drain terminal; and an interface layer between the source terminal and the drain terminal, the interface layer including the plurality of interface channels; determining, by the deterioration monitoring circuit, whether there is deterioration of the material at the one or more interface channels among the plurality of interface channels based on the sensor signal; and outputting, by the deterioration monitoring circuit, information indicating whether there is deterioration of the material at the one or more interface channels among the plurality of interface channels.

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