Radio frequency power output circuit and semiconductor process equipment

Abstract

The invention discloses a radio frequency power output circuit and semiconductor process equipment, relates to the technical field of semiconductors, and can improve the problem of low cavity matching degree caused by the difference of a radio frequency system so as to improve the performance of a thin film. The radio frequency power output circuit comprises a radio frequency power supply module which comprises a first radio frequency power supply and a second radio frequency power supply; the power distribution module comprises a first input end, a second input end and a plurality of output ends in one-to-one correspondence with the plurality of process chambers; the first input end is electrically connected with a first radio frequency power supply, the second input end is electrically connected with a second radio frequency power supply, and each output end is used for being electrically connected with a corresponding process chamber; and the power distribution module is used for averagely distributing the energy of the first radio frequency signal received by the first input end and / or the energy of the second radio frequency signal received by the second input end to each process chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a radio frequency power output circuit and a semiconductor processing device. Background Art

[0002] As the critical dimension (CD) of components continues to decrease, as a semiconductor thin film process method with good deposition uniformity, Plasma Enhanced Atomic Layer Deposition (PEALD) technology is very important in processes below 28 nm. Compared with Physical Vapor Deposition (PVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), the thin films deposited by PEALD have good conformality, precise thickness control ability, and excellent filling ability for high aspect ratio pattern structures. In addition, the relatively low process temperature of PEALD is also beneficial to process integration. However, various ALD (Atomic Layer Deposition) methods, such as thermal ALD (Thermal Atomic Layer Deposition) and PEALD, have limited their application in mass production in the integrated circuit industry due to the low productivity caused by the slow reaction rate.

[0003] To improve productivity, batch-type, twin chamber, quadruple chamber and other forms of PEALD multi-wafer chambers have been widely used in the preparation of oxides (such as SiO2, etc.). During the preparation process, multiple wafers can be placed in the chamber at the same time, and the deposition process can be completed at one time; compared with the single-wafer process, the wafer transfer time is saved, and the productivity is greatly improved.

[0004] With the continuous progress of semiconductor technology, on the basis of meeting the productivity requirements, the performance requirements of thin films (such as thickness uniformity, density performance, stress, etc.) in multi-wafer processing systems of multi-wafer processes are becoming more and more stringent. Due to process limitations, there are differences in the radio frequency systems of different chambers, which affects the matching degree of the thin films deposited in each chamber, and further affects the performance of the thin films deposited in each chamber. Summary of the Invention

[0005] Embodiments of the present application provide a radio frequency power output circuit and a semiconductor processing apparatus, which can improve the problem of low chamber matching degree caused by differences in radio frequency systems, thereby improving film performance.

[0006] To achieve the above object, the embodiments of the present application adopt the following technical solutions:

[0007] On the one hand, embodiments of the present application provide a radio frequency power output circuit applied to a semiconductor processing apparatus, where the semiconductor processing apparatus includes: a plurality of independent process chambers;

[0008] The radio frequency power output circuit includes:

[0009] A radio frequency power supply module, including a first radio frequency power supply and a second radio frequency power supply, where the first radio frequency power supply is used to output a first radio frequency signal, the second radio frequency is used to output a second radio frequency signal, and the frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal;

[0010] A power distribution module, including a first input end, a second input end, and a plurality of output ends corresponding to the plurality of process chambers one by one; the first input end is electrically connected to the first radio frequency power supply and is used to receive the first radio frequency signal output by the first radio frequency power supply; the second input end is electrically connected to the second radio frequency power supply and is used to receive the second radio frequency signal output by the second radio frequency power supply; each output end is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input end and / or the energy of the second radio frequency signal received by the second input end to each process chamber.

[0011] Optionally, the power distribution module includes a plurality of power distribution units, and the plurality of power distribution units correspond to the plurality of process chambers one by one;

[0012] The power distribution unit includes a first filter circuit and a second filter circuit;

[0013] The input end of the first filter circuit is electrically connected to the first radio frequency power supply, and the output end is electrically connected to the corresponding process chamber; the first filter circuit is used to isolate signals other than the first radio frequency signal;

[0014] The input end of the second filter circuit is electrically connected to the second radio frequency power supply, and the output end is electrically connected to the output end of the first filter circuit; the second filter circuit is used to isolate signals other than the second radio frequency signal.

[0015] Optionally, the power distribution unit further includes a balancing circuit disposed between the output end of the first filtering circuit and the process chamber for changing the resonance point of the circuit and avoiding series resonance.

[0016] Optionally, the first filtering circuit includes a fifth capacitor, the second filtering circuit includes a sixth capacitor and a third inductor connected in parallel, and the balancing circuit includes a fourth inductor;

[0017] Wherein, the first end of the fifth capacitor is electrically connected to the first node, the first ends of the sixth capacitor and the third inductor are both electrically connected to the second node, the second ends of the fifth capacitor, the sixth capacitor and the third inductor are all electrically connected to the first end of the fourth inductor, and the second end of the fourth inductor is electrically connected to the corresponding third node.

[0018] Optionally, the inductance value of the fourth inductor is less than the inductance value of the third inductor.

[0019] Optionally, the second power distribution sub-unit further includes an isolation circuit;

[0020] The input end of the isolation circuit is electrically connected to the input end of the second filtering circuit, and the output end of the isolation circuit is grounded; the isolation circuit is used for isolating the first radio frequency signal flowing from the first filtering circuit to the second filtering circuit.

[0021] Optionally, the isolation circuit includes a seventh capacitor;

[0022] The first end of the seventh capacitor is electrically connected to the first end of the sixth capacitor, and the second end of the seventh capacitor is grounded.

[0023] Optionally, the radio frequency power output circuit further includes a plurality of power compensation units; the plurality of power compensation units correspond to the plurality of power distribution units one by one;

[0024] The input end of the power compensation unit is electrically connected to the output end of the corresponding power distribution unit, and the output end of the power compensation unit is used for being electrically connected to the corresponding process chamber; each power compensation unit is used for adjusting the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

[0025] Optionally, the power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel;

[0026] The first ends of the first variable capacitor and the second variable capacitor are both electrically connected to the output ends of the corresponding power distribution units, and the second ends of the first variable capacitor and the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chambers;

[0027] The signals output by the power distribution unit include a first signal and a second signal, and the frequency of the first signal is greater than the frequency of the second signal;

[0028] The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0029] Optionally, the range of the frequency value of the first radio frequency signal includes 10 MHz to 100 MHz, and the range of the frequency value of the second radio frequency signal includes 300 KHz to 500 KHz.

[0030] Optionally, the radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit;

[0031] The input end of the first radio frequency matching circuit is electrically connected to the output end of the first radio frequency power supply, and the output end of the first radio frequency matching circuit is electrically connected to the first input end of the power distribution module;

[0032] The input end of the second radio frequency matching circuit is electrically connected to the output end of the second radio frequency power supply, and the output end of the second radio frequency matching circuit is electrically connected to the second input end of the power distribution module.

[0033] Optionally, the first radio frequency matching circuit includes a first capacitor, a second capacitor and a first inductor;

[0034] Wherein, the first ends of the first capacitor and the second capacitor are both electrically connected to the output end of the first radio frequency power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module;

[0035] The second radio frequency matching circuit includes a third capacitor, a fourth capacitor and a second inductor;

[0036] Wherein, the first end of the third capacitor and the first end of the second inductor are both electrically connected to the output end of the second radio frequency power supply, the second end of the third capacitor is grounded, the second end of the second inductor and the first end of the fourth capacitor are both electrically connected to the second input end of the power distribution module, and the second end of the fourth capacitor is grounded.

[0037] On the other hand, an embodiment of the present application provides a semiconductor process equipment, which includes a plurality of independent process chambers and the above-mentioned radio frequency power output circuit;

[0038] The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly which are oppositely arranged inside the chamber body;

[0039] Each output end of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0040] Optionally, the upper electrode assembly includes a chamber cover and a flow equalizing structure, the flow equalizing structure is fixed on one side of the chamber cover, and the chamber cover includes an air inlet block;

[0041] The process chamber further includes an annular heat preservation layer, an annular heating belt and a plurality of heating rods arranged on the side of the chamber cover away from the flow equalizing structure; the inner ring of the annular heat preservation layer is used to expose the air inlet block of the chamber cover; the plurality of heating rods are arranged around the annular heat preservation layer in a circle, a part of the heating rods is arranged inside the chamber cover, and the rest protrude from the upper surface of the chamber cover; the annular heating belt is arranged around the plurality of heating rods in a circle.

[0042] An embodiment of the present application provides a radio frequency power output circuit and a semiconductor process equipment. When the radio frequency power output circuit is applied to the semiconductor process equipment, the first radio frequency signal output by the first radio frequency power supply and / or the second radio frequency signal output by the second radio frequency power supply can evenly distribute the energy of the first radio frequency signal and / or the energy of the second radio frequency signal to each process chamber through the power distribution module, thereby improving the problem of low chamber matching degree caused by differences in the radio frequency system, and further improving the film performance.

[0043] The above description is only an overview of the technical solution of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are specifically exemplified below. Description of the Drawings

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0045] Figure 1 FIG. 27 is a schematic structural diagram of a dual-chamber PEALD provided by the prior art;

[0046] Figure 2 Schematic diagram of a radio frequency feeding structure of a chamber provided by the prior art;

[0047] Figure 3 Schematic diagram of a structure of a radio frequency power output circuit provided by an embodiment of the present application;

[0048] Figure 4 Schematic diagram of a structure of another radio frequency power output circuit provided by an embodiment of the present application;

[0049] Figure 5 Schematic diagram of a structure of a semiconductor process equipment provided by an embodiment of the present application;

[0050] Figure 6 Schematic diagram of a structure of a heating block of a chamber cover plate provided by the prior art;

[0051] Figure 7 Adopt Figure 6 The heating rate curve graph heated by the shown heating block;

[0052] Figure 8 Schematic diagram of a structure of an annular heating belt and a heating rod provided by an embodiment of the present application;

[0053] Figure 9 Is Figure 8 The top view of;

[0054] Figure 10 Schematic diagram of a structure of a heating rod and a chamber cover provided by an embodiment of the present application;

[0055] Figure 11 Schematic diagram of a structure of another heating rod and a chamber cover provided by an embodiment of the present application;

[0056] Figure 12 Adopt Figure 8 The heating rate curve graph heated by the shown annular heating belt and heating rod. Detailed implementation manners

[0057] To make the objectives, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0058] In the embodiments of the present application, terms such as "first" and "second" are used to distinguish identical or similar items with basically the same functions and effects, only for clearly describing the technical solutions of the embodiments of the present application, and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features.

[0059] In the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically defined. In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "front", "back", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0060] In the prior art, the PEALD dual-chamber structure can be referred to Figure 1 as shown. RC1 and RC2 are two physically isolated independent chambers. After the process gas Gas flowing out from the Gas Panel ( Figure 1 not shown) above RC1 and RC2 is separated by a pipeline, it flows into the RC1 and RC2 chambers through the respective gas distribution devices (marked as 1 and 2 respectively) of RC1 and RC2; the PEALD dual-chamber structure also includes two independent RF radio frequency power supplies S1 and S2, and two independent radio frequency matching controllers Match1 and Match2. After radio frequency matching, they enter RC1 and RC2 respectively for process ignition, and radio frequency plasma can be generated in RC1 and RC2 simultaneously or successively. The heating bases heater of RC1 and RC2 are marked as 3 and 4 respectively, and the wafers on the heating bases of RC1 and RC2 are marked as 5 and 6 respectively. The front-end exhaust gas pipelines Fore line 1 ( Figure 1 not marked) and Fore line 2 ( Figure 1Isolation valves IV1 and IV2 are respectively installed on (not marked), and butterfly valves TV1 and TV2 that control the chamber pressure through different opening and closing angles; this structure can achieve the physical isolation of RC1 and RC2, and at the same time can independently control the exhaust speed of RC1 and RC2, and separately adjust the process pressure of RC1 and RC2. The intake blocks (i.e., intake block blocks) at the intersection of the process gases of RC1 and RC2 and the RPS (Remote Plasma System) cleaning gas (usually NF3) channels are respectively marked as 7 and 8, and isolation valves IV3 and IV4 with independent switches are respectively installed between the RPS and the intake blocks. When the films in the chambers RC1 and RC2 accumulate to a certain thickness and need to be cleaned, the cleaning gas NF3 flows out from the RPS and then directly flows to RC1 and RC2 through two pipelines respectively, realizing the independent cleaning of the chambers RC1 and RC2. Figure 1 In it, the intake structure further includes a source bottle 9, and MFC represents a flow controller.

[0061] The radio frequency feeding structure of one chamber in the PEALD dual chamber can refer to Figure 2 as shown Figure 2 In it, the process gas enters the chamber from the intake block 7 through the chamber lid 8 and the showerhead 9. The frequency of the RF Generator is the high frequency of 13.56 MHz, and the RF Power output by it first passes through the Cable to the RF Match, and then is fed into the upper electrode (RF Electrode) of the chamber through the RF copper bar 12, that is Figure 2 the chamber lid 8 shown. The lower electrode heater 11 is grounded. After the radio frequency signal is fed in from the copper bar, plasma 10 is generated between the upper electrode and the lower electrode. In this radio frequency system, the chamber lid is connected to the radio frequency as the upper electrode, and the heater is grounded as the other electrode. Figure 2 In it, the upper heating block is marked as 13, the ceramic insulation isolation block is marked as 14, and the chamber wall is marked as 15.

[0062] In the existing dual chamber PEALD, such as Figure 1 as shown, two radio frequency power supplies S1 and S2 are set for RC1 and RC2. During the process, the radio frequency energy is controlled by controlling the radio frequency set power of the respective radio frequency power supplies of RC1 and RC2; that is, the input power of the RF (i.e., the forward power, Psetting) is set in the process operation menu (recipe), and this power is the initial output power of the radio frequency power supply end (RFGenerator). This output power passes through the respective radio frequency matchers of RC1 and RC2 (i.e.,Figure 1 Adjusted by Match1 and Match2 shown, with the adjustment target being to make the reflected power (Preflected) lower than the set spec (specification), for example: Preflected < 1% × Psetting, in order to expect to achieve consistent feed-in power for RC1 and RC2.

[0063] Compared with the process of single-chamber PEALD, there is a problem of mismatch between multiple chambers in multi-chamber (such as: double-chamber or quadruple-chamber) PEALD processes. This mismatch is manifested in the process as inconsistent thin-film properties between the wafers deposited in each chamber. For example: the WER, thickness, stress, etc. of the thin films deposited in each chamber do not match, exceeding the spec range, directly affecting the application of the thin films; especially in applications such as 28nm spacer, double pattern (double exposure) below 28nm, liner, etc., there are very strict requirements for the matching between chambers. Taking a double-chamber PEALD device as an example for illustration, if a SiO2 thin film (TSV liner) for an advanced packaging layer is to be formed, with a target thickness of 6000, the average deposition thickness per cycle of the ALD reaction is about 0.7. The difference in SiO2 thickness between the two wafers deposited simultaneously in the two chambers is required to be less than 120, and averaged to the deposition thickness per cycle of the ALD reaction, the difference between the two chambers < 0.01. Although within a certain range, the thickness difference can be reduced by adjusting the cycle numbers of the two chambers, it undoubtedly poses high requirements for the matching between chambers. Differences in the gas transmission systems, temperature control systems, radio frequency generation and transmission systems of the two chambers may all affect the matching degree of the two chambers. In addition, the above TSV liner thin film generally has a stress requirement of -250 ± 50 MPa. On the basis of strictly meeting the thin-film properties, each equipment manufacturer also needs to compress the equipment manufacturing cost, reduce the equipment ownership cost (Cost of Ownership, CoO) and the equipment consumables cost (Cost of Consumables, CoC).

[0064] In addition, with higher requirements for equipment manufacturing costs, the existing double-chamber PEALD using two radio frequency power supplies and two sets of matching control systems faces greater cost pressure. At the same time, the current equipment has a lack of adjustment means for thin-film properties (especially thin-film stress). For example: the stress required for a 6000 TSV liner (depositing a silicon dioxide protective layer for three-dimensional through-silicon vias) is generally -250 ± 50 MPa. The effects of methods such as adjusting gas flow and process pressure are limited. Although increasing the radio frequency power supply power can change the thin-film stress (stress), the improvement degree is limited, and it will cause deterioration of properties such as thickness uniformity and in-film particles.

[0065] Based on the above, embodiments of the present application provide a radio frequency power output circuit, which is applied to semiconductor process equipment, and the semiconductor process equipment includes: a plurality of independent process chambers.

[0066] Referring to Figure 3 As shown, the radio frequency power output circuit includes: a radio frequency power supply module 20 and a power distribution module 22. Among them:

[0067] The radio frequency power supply module 20 includes a first radio frequency power supply 201 and a second radio frequency power supply 202. The first radio frequency power supply is used to output a first radio frequency signal, and the second radio frequency is used to output a second radio frequency signal, and the frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal.

[0068] The power distribution module 22 includes a first input end, a second input end, and a plurality of output ends corresponding to the plurality of process chambers one by one; the first input end is electrically connected to the first radio frequency power supply for receiving the first radio frequency signal output by the first radio frequency power supply; the second input end is electrically connected to the second radio frequency power supply for receiving the second radio frequency signal output by the second radio frequency power supply; each output end is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input end and / or the energy of the second radio frequency signal received by the second input end to each process chamber.

[0069] In specific implementation, in the above radio frequency power supply module, the first radio frequency power supply belongs to a high-frequency radio frequency power supply, and the second radio frequency power supply belongs to a low-frequency radio frequency power supply. The present application does not limit the frequency values of the first radio frequency signal and the second radio frequency signal. For example, the frequency value of the first radio frequency signal can be 13.56 MHz, and the frequency value of the second radio frequency signal can be 400 KHz. Similarly, the present application does not limit the specific structures and power values of the first radio frequency power supply and the second radio frequency power supply. Since the output frequency of the first radio frequency power supply is relatively high and the power is correspondingly large, for example, the power value range of the first radio frequency power supply is set at 1500 w to 5000 w, and 3000 w to 5000 w is preferably selected; the power value range of the second radio frequency power supply is set at 100 w to 1000 w, and 500 w to 1000 w is preferably selected.

[0070] This application does not limit the specific structure of the above power distribution module, and the number of its output terminals is the same as the number of process chambers. If the number of process chambers is two, the above radio frequency power output circuit is applied to a semiconductor process equipment with two chambers. At this time, the power distribution module includes two output terminals, which can be called a Twin-Chamber Power Distribution System (TCPD), and is used to evenly distribute the energy of the first radio frequency signal output by the first radio frequency matching circuit and / or the energy of the second radio frequency signal output by the second radio frequency matching circuit to the two process chambers, while ensuring that the energy of the two different frequencies does not interfere with each other. Of course, the number of process chambers can also be three, four or more than four, and the output terminals of the power distribution module in the radio frequency power output circuit are correspondingly three, four or more than four. It should be noted that the power distribution module is mainly used to evenly distribute the energy of the radio frequency signal received by the first input terminal and the energy of the radio frequency signal received by the second input terminal to each process chamber. When only the first input terminal receives a radio frequency signal, the power distribution module evenly distributes the energy of the radio frequency signal received by the first input terminal to each process chamber. When only the second input terminal receives a radio frequency signal, the power distribution module evenly distributes the energy of the radio frequency signal received by the second input terminal to each process chamber. When both the first input terminal and the second input terminal receive radio frequency signals, the power distribution module evenly distributes the energy of the radio frequency signal received by the first input terminal and the energy of the radio frequency signal received by the second input terminal to each process chamber.

[0071] Therefore, the above power distribution module for evenly distributing the energy of the first radio frequency signal received by the first input terminal and / or the energy of the second radio frequency signal received by the second input terminal to each of the process chambers includes the following situations:

[0072] First, when only the first radio frequency power supply in the radio frequency power supply module outputs the first radio frequency signal and the second radio frequency power supply does not output the second radio frequency signal, the power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input terminal to each process chamber.

[0073] Second, when only the second radio frequency power supply in the radio frequency power supply module outputs the second radio frequency signal and the first radio frequency power supply does not output the first radio frequency signal, the power distribution module is used to evenly distribute the energy of the second radio frequency signal received by the second input terminal to each process chamber.

[0074] Third, when the first radio frequency power supply in the radio frequency power supply module outputs the first radio frequency signal and the second radio frequency power supply outputs the second radio frequency signal, the power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input terminal and the energy of the second radio frequency signal received by the second input terminal to each process chamber.

[0075] Embodiments of the present application provide a radio frequency power output circuit and a semiconductor processing apparatus. When the radio frequency power output circuit is applied to the semiconductor processing apparatus, the first radio frequency signal output by the first radio frequency power supply and / or the second radio frequency signal output by the second radio frequency power supply can, after passing through the power distribution module, evenly distribute the energy of the first radio frequency signal and / or the energy of the second radio frequency signal to each process chamber, thereby improving the problem of low chamber matching degree caused by differences in the radio frequency system, and further improving the film performance.

[0076] In addition, in the radio frequency power output circuit provided by the present application, two radio frequency power supplies with different frequency values, namely the first radio frequency power supply 201 and the second radio frequency power supply 202, are adopted. It can not only achieve the functions of using only one of the radio frequency power supplies alone, but also combine the two radio frequency power supplies to achieve a better debugging method.

[0077] For example, regarding the problem of the lack of means for adjusting the film performance (especially film stress) in the existing equipment mentioned above. The effects of the prior art methods such as adjusting the gas flow rate and process pressure are limited. Although increasing the power of the radio frequency power supply can change the film stress, the improvement degree is limited, and it will cause deterioration of performance such as thickness uniformity and film particles.

[0078] In the present application, when it is necessary to optimize and adjust the film stress, the first radio frequency power supply in the radio frequency power supply module outputs the first radio frequency signal, and the second radio frequency power supply outputs the second radio frequency signal. The power distribution module then evenly distributes the energy of the first radio frequency signal received at the first input end and the energy of the second radio frequency signal received at the second input end to each process chamber, that is, evenly distributes the energies of two different frequencies to each process chamber. By adjusting the power of the second radio frequency power supply (i.e., adjusting the low-frequency energy fed into the process chamber), the film stress can be adjusted without adjusting the power of the first radio frequency power supply, thereby ensuring that the film stress performance is improved without reducing the thickness uniformity and film particle performance, and further improving the film quality.

[0079] Therefore, the radio frequency power output circuit provided by the embodiments of the present application can adjust the film properties such as film stress, wet etching rate, thickness uniformity, and film particles by adjusting the power of the first radio frequency power supply and / or the power of the second radio frequency power supply. Compared with the prior art method of adjusting the film properties by adjusting the power of the high-frequency radio frequency power supply, the radio frequency power output circuit provided by the embodiments of the present application increases the process debugging means and can greatly improve the film quality. In addition, in the radio frequency power output circuit provided by the embodiments of the present application, only one high-frequency first radio frequency power supply and one low-frequency second radio frequency power supply are provided, and all chambers share the first radio frequency power supply and the second radio frequency power supply. Compared with the structure of using one high-frequency power supply for each chamber in the prior art, the radio frequency power output circuit provided by the embodiments of the present application saves the number of high-frequency power supplies, thereby reducing the equipment cost.

[0080] The following takes a dual-chamber PEALD device as an example to compare the application of the prior art and the present application. In the process of depositing SiO2 for TSV liner using a PEALD device, in the prior art, two high-frequency radio frequency power supplies of the same type (the output radio frequency signal frequency is generally 13.56 MHz) are used to feed radio frequency signals into the dual chambers respectively. In the adjustment of film stress, the flow rates of the precursor gas (for example: source SAM24) and the reaction gas (for example: O2) have almost no adjustment effect on the stress. Increasing the high-frequency radio frequency power (RF power), for example, from 500 W to 1000 W, can partially adjust the stress, for example: from 200 MPa to 0 MPa. However, the stress requirement for the general TSV liner process is -280 ± 50 MPa, and the adjustable range is quite different from the requirement. If the stress requirement is to be met, the high-frequency radio frequency power needs to be increased again. However, this will cause deterioration of properties such as thickness uniformity and film particles. In the present application, two radio frequency power supplies with different output frequencies (for example: 13.56 MHz and 400 KHz) are used, and the radio frequency energy fed into each chamber includes high-frequency (HF) radio frequency energy and low-frequency (LF) radio frequency energy. The high-frequency energy is used to adjust properties such as thickness uniformity and film particles, and the low-frequency energy is used to adjust film stress. By adjusting the output power of the second radio frequency power supply, the stress requirement of the TSV liner can be met without adjusting the output power of the first radio frequency power supply. By adjusting the radio frequency energy, especially the low-frequency energy, the adjustment window of the film stress can be significantly expanded, so that the TSV liner film can be better integrated with the front and back film layers (layers) in the process.

[0081] When using a PEALD device to deposit SiO2 for a spacer (sidewall), there are relatively strict requirements for the Wet Etch Rate (WER) range of the thin film. In the prior art, the WER requirements can be met by adjusting the power of the high-frequency radio frequency power supply and other process parameters, but the performance such as thickness uniformity and film particles will deteriorate. In this application, on the premise of slightly adjusting the high-frequency energy, that is, the power of the first radio frequency power supply, the low-frequency energy, that is, the power of the second radio frequency power supply, can be adjusted to meet the WER requirements. Since the first radio frequency power supply and other process parameters remain unchanged or change slightly, the performance such as thickness uniformity and film particles will remain basically constant.

[0082] Optionally, referring to Figure 3 As shown, the radio frequency power output circuit further includes: a first radio frequency matching circuit 211 and a second radio frequency matching circuit 212.

[0083] The input end of the first radio frequency matching circuit is electrically connected to the output end of the first radio frequency power supply, and the output end of the first radio frequency matching circuit is electrically connected to the first input end of the power distribution module;

[0084] The input end of the second radio frequency matching circuit is electrically connected to the output end of the second radio frequency power supply, and the output end of the second radio frequency matching circuit is electrically connected to the second input end of the power distribution module.

[0085] This application does not limit the specific structures of the above first radio frequency matching circuit and second radio frequency matching circuit. The matching circuit generally includes an L-type matching network, a Π-type (pi-type) matching network, or a T-type matching network, etc., which can be selected according to actual requirements. The relevant descriptions of the L-type matching network, Π-type matching network, or T-type matching network can refer to the prior art and will not be elaborated here. The first radio frequency matching circuit maximizes the output power of the first radio frequency power supply and minimizes the reflection loss at the same time. The second radio frequency matching circuit maximizes the output power of the second radio frequency power supply and minimizes the reflection loss at the same time.

[0086] Exemplarily, referring to Figure 4 As shown, the first radio frequency matching circuit 211 includes a first capacitor C1, a first capacitor C2, and a first inductor L1; wherein, the first ends of the first capacitor C1 and the first capacitor C2 are both electrically connected to the output end of the first radio frequency power supply 201, and the second end of the first capacitor C1 is grounded; the second end of the first capacitor C2 is electrically connected to the first end of the first inductor L1; the second end of the first inductor L1 is electrically connected to the first node N1.

[0087] The second radio frequency matching circuit 212 includes a third capacitor C3, a fourth capacitor C4, and a second inductor L2; wherein, the first end of the third capacitor C3 and the first end of the second inductor L2 are both electrically connected to the output end of the second radio frequency power supply 202, and the second end of the third capacitor C3 is grounded; the second end of the second inductor L2 and the first end of the fourth capacitor C4 are both electrically connected to the second node N2; the second end of the fourth capacitor C4 is grounded.

[0088] In the first radio frequency matching circuit 211, the branch where the first capacitor C2 and the first inductor L1 are located forms an L-shaped structure with the branch where the first capacitor C1 is located. The first radio frequency matching circuit belongs to an L-shaped matching network circuit, which can provide broadband impedance matching between the first radio frequency power supply and the load, and has a simple structure and is easy to implement. In the second radio frequency matching circuit 212, the branch where the third capacitor C3 is located, the branch where the second inductor L2 is located, and the branch where the fourth capacitor C4 is located form a Π-shaped structure. The second radio frequency matching circuit belongs to a Π-shaped matching network circuit, which can achieve more precise matching and a smaller error rate.

[0089] It should be noted that the above-mentioned "first end" refers to that in the circuit diagram structure, when the component (inductor or capacitor) is arranged vertically, the upper end is the first end and the lower end is the second end; when the component (inductor or capacitor) is arranged horizontally, the left end is the first end and the right end is the second end. For example, Figure 3 in the first capacitor C1 is arranged vertically, the upper end is the first end and the lower end is the second end; Figure 3 in the second capacitor C2 is arranged horizontally, the left end is the first end and the right end is the second end; Figure 3 in the first inductor L1 is arranged horizontally, the left end is the first end and the right end is the second end. The meanings of the first end and the second end of other inductors or capacitors are similar to this, and will not be described one by one hereafter.

[0090] In one or more embodiments, as shown in Figure 3 the power distribution module 22 includes a plurality of power distribution units, and the plurality of power distribution units correspond to the plurality of process chambers 24 one by one.

[0091] As shown in Figure 4 the power distribution unit includes a first filtering circuit 221 and a second filtering circuit 222. Wherein, the input end of the first filtering circuit 221 is electrically connected to the first radio frequency power supply 201, and the output end is electrically connected to the corresponding process chamber; the first filtering circuit is used to isolate signals other than the first radio frequency signal; the input end of the second filtering circuit 222 is electrically connected to the second radio frequency power supply 202, and the output end is electrically connected to the output end of the first filtering circuit; the second filtering circuit is used to isolate signals other than the second radio frequency signal. Figure 4 The case where the power distribution module includes two power distribution units and is electrically connected to the bases 242 of two process chambers is illustrated as an example.

[0092] Each of the power distribution units is correspondingly provided with a process chamber, and high-frequency energy and / or low-frequency energy are simultaneously fed into the corresponding process chamber.

[0093] The first RF energy (i.e., high-frequency energy) generated by the first RF power supply and / or the second RF energy (i.e., low-frequency energy) generated by the second RF power supply can be evenly distributed to each process chamber after passing through multiple power distribution units, while avoiding crosstalk between energies of two different frequencies.

[0094] The above-mentioned first filtering circuit can isolate and prevent low-frequency energy (for example: 400KHz) from flowing, ensure high-frequency energy (for example: 13.56MHz) from flowing, and at the same time, prevent low-frequency energy from flowing to the first RF power supply; the above-mentioned second filtering circuit can filter out high-frequency energy (for example: 13.56MHz), that is, prevent high-frequency energy from flowing, ensure low-frequency energy (for example: 400KHz) from flowing, and at the same time, prevent high-frequency energy from flowing to the second RF power supply.

[0095] In specific implementation, series resonance is easily formed between the power distribution unit and the chamber; if series resonance occurs in the chamber during the ignition process, the current in the circuit is too large and it is very easy to burn out the device, thereby greatly reducing the safety performance and equipment quality. Figure 4 As shown, the power distribution unit further includes a balancing circuit 223, which is arranged between the output end of the first filter circuit 221 and the process chamber 24, and is used to change the resonance point of the circuit to avoid series resonance. That is, by setting the balancing circuit, the resonance point of the circuit can be changed, thereby avoiding the series resonance phenomenon and improving the safety performance and equipment quality.

[0096] In order to simplify the structure, facilitate implementation, and further reduce costs, optional, reference Figure 4 As shown, the first filter circuit 221 includes a fifth capacitor C5, the second filter circuit 222 includes a sixth capacitor C6 and a third inductor L3 connected in parallel, and the balancing circuit 223 includes a fourth inductor L4; wherein, the first end of the fifth capacitor C5 is electrically connected to the first RF power supply 201, the first end of the sixth capacitor C6 and the first end of the third inductor L3 are both electrically connected to the second RF power supply 202, the second end of the fifth capacitor C5, the second end of the sixth capacitor C6 and the second end of the third inductor L3 are all electrically connected to the first end of the fourth inductor L4, and the second end of the fourth inductor L4 is electrically connected to the corresponding process chamber.

[0097] The greater the inductance of the inductor, the greater the loss of high-frequency energy. In order to minimize the loss of the first radio frequency energy (ie, high-frequency energy), optionally, the inductance of the fourth inductor is smaller than the inductance of the third inductor.

[0098] To avoid the first radio frequency energy (i.e., high-frequency energy) flowing out of the first filtering circuit from flowing to the second radio frequency power supply and prevent it from affecting the second radio frequency power supply. Optionally, referring to Figure 4 As shown, the power distribution unit further includes an isolation circuit 224. The input end of the isolation circuit 224 is electrically connected to the input end of the second filtering circuit 222, and the output end of the second filtering circuit 222 is grounded; the second filtering circuit 222 is used to isolate the first radio frequency signal flowing from the first filtering circuit to the second filtering circuit; in this way, the first radio frequency energy (i.e., high-frequency energy) flowing out of the first filtering circuit is grounded and exported after passing through the second filtering circuit and the isolation circuit, so that it will not flow to the second radio frequency power supply and avoid affecting the second radio frequency power supply.

[0099] To effectively isolate high-frequency energy. Optionally, referring to Figure 4 As shown, the isolation circuit 224 includes a seventh capacitor C7; the first end of the seventh capacitor C7 is electrically connected to the first end of the sixth capacitor C6, and the second end of the seventh capacitor C7 is grounded.

[0100] In order to further ensure that the radio frequency signals output by the radio frequency power output circuit to each process chamber have the same power, thereby further improving the process matching degree of each chamber. In one or more embodiments, referring to Figure 3 As shown, the radio frequency power output circuit further includes: a plurality of power compensation units 23; the plurality of power compensation units correspond one-to-one with the plurality of power distribution units.

[0101] The input end of the power compensation unit is electrically connected to the output end of the corresponding power distribution unit, and the output end of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the radio frequency signals output by each power compensation unit to the corresponding process chamber have the same power.

[0102] This application does not limit the specific structure of the above-mentioned power distribution unit, and it can be selected according to the actual situation. Each power distribution unit correspondingly outputs a radio frequency signal to a process chamber, and each power distribution unit can adjust the impedance value according to the process result, so as to change the value of the first radio frequency energy and / or the second radio frequency energy flowing into each process chamber, and further ensure that the radio frequency signals output to each process chamber have the same power, thereby realizing the radio frequency power compensation for each chamber.

[0103] Optionally, in order to further simplify the structure and facilitate implementation, the power compensation unit may include a first variable capacitor and a second variable capacitor connected in parallel; the first end of the first variable capacitor and the first end of the second variable capacitor are both electrically connected to the output end of the corresponding power distribution unit, and the second end of the first variable capacitor and the second end of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber.

[0104] The signals output by the power distribution unit include a first signal and a second signal, and the frequency of the first signal is greater than that of the second signal; the first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0105] By adjusting the impedance values of the first variable capacitor and the second variable capacitor, the current values of the two branches can be adjusted respectively, so as to change the energy value of the first signal (i.e., the high-frequency energy value) and the energy value of the second signal (i.e., the low-frequency energy value), and further change the total energy value of the radio frequency signal flowing into the process chamber, and finally achieve the purpose of power compensation and realize chamber match.

[0106] Optionally, the frequency value range of the first radio frequency signal includes 10 MHz to 100 MHz. For example, the frequency value of the first radio frequency signal can be 10 MHz, 13.56 MHz, 15 MHz, 30 MHz or 50 MHz, etc. Generally, 13.56 MHz is more commonly used; the frequency value range of the second radio frequency signal includes 300 KHz to 500 KHz; for example, the frequency value of the second radio frequency signal can be 300 KHz, 400 KHz or 500 KHz, etc. Generally, 400 KHz is more commonly used.

[0107] An embodiment of the present application further provides a semiconductor processing apparatus, including a plurality of independent process chambers and the above-mentioned radio frequency power output circuit.

[0108] Reference Figure 5 As shown, the process chamber includes a chamber body 249 and an upper electrode assembly and a lower electrode assembly that are oppositely arranged inside the chamber body 249; each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0109] The above-mentioned upper electrode assembly may include a chamber cover 243 and a flow equalizing structure 241 as Figure 5 shown, and the flow equalizing structure 241 is fixed on one side of the chamber cover 243; the lower electrode assembly may include a base 242 as Figure 5 shown.

[0110] The radio frequency power output circuit is used to feed radio frequency signals to the upper electrode assembly or the lower electrode assembly of each process chamber. Each output terminal of the power distribution module of the radio frequency power output circuit can be electrically connected to the upper electrode assembly of the corresponding process chamber. At this time, the lower electrode assemblies of each process chamber are grounded; or, each output terminal of the power distribution module of the radio frequency power output circuit can be electrically connected to the lower electrode assembly of the corresponding process chamber. At this time, the upper electrode assemblies of each process chamber are grounded; or, some output terminals of the power distribution module of the radio frequency power output circuit are electrically connected to the upper electrode assembly of the corresponding process chamber (at this time, the lower electrode assemblies of this part of the process chambers are grounded), and the remaining output terminals are electrically connected to the lower electrode assembly of the corresponding process chamber (at this time, the upper electrode assemblies of this part of the process chambers are grounded). There is no specific limitation here.

[0111] To be more conducive to improving the chamber matching degree, it can be selected that each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the pedestal of the corresponding process chamber, and the chamber lids and the flow equalizing structures of each process chamber are grounded; the first radio frequency energy and / or the second radio frequency energy are fed onto the pedestal, so as to form a negative bias voltage on the wafer surface. Under the action of the negative bias voltage, the deposited reactants are denser, which is more conducive to improving the film quality (for example: WER and stress film properties).

[0112] When the output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly, this output terminal can be electrically connected to the flow equalizing structure, or it can also be electrically connected to the chamber lid. There is no limitation here. When the output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the lower electrode assembly, this output terminal can be electrically connected to the pedestal. There is no limitation on the specific part of the connection to the pedestal. By way of example, for the sake of easy implementation and without occupying extra space, it can be electrically connected to the pedestal shaft (heater shaft).

[0113] For the specific description of the above radio frequency power output circuit, reference can be made to the foregoing embodiments, and details are not described herein again.

[0114] The semiconductor process equipment provided by the embodiments of the present application belongs to atomic layer deposition equipment, and it may further include an air inlet structure, an in-situ cleaning structure, a tail gas exhaust structure, etc. The air inlet structure, the in-situ cleaning structure, and the tail gas exhaust structure can refer to the prior art, and details are not described herein again.

[0115] Using the semiconductor process equipment provided by the embodiments of the present application for thin film deposition can improve the problem of low chamber matching degree caused by differences in radio frequency systems, thereby improving the thin film performance. In addition, when the power distribution module of the radio frequency power output circuit is used to evenly distribute the energy of the first radio frequency signal output by the first radio frequency power supply and the energy of the second radio frequency signal output by the second radio frequency power supply to each of the process chambers, the thin film stress performance can be improved without reducing the thickness uniformity and thin film particle performance, greatly improving the thin film quality; at the same time, the number of high-frequency power supplies is saved, thereby reducing the equipment cost.

[0116] In the prior art, the chamber cover plate is the first place where the source, process gas, and radio frequency energy pass through before entering the chamber. Therefore, the temperature control of the chamber cover plate is very important. Refer to Figure 6 As shown, four independent heating blocks 13 are provided on the upper surface of the chamber cover plate. After the four heating blocks are connected in series, they heat the chamber cover plate. The heating blocks can be made of heating plates; Figure 6 In [reference], the intake component is marked as 7, and the exposed area on the chamber cover plate not covered by the heating block 13 is marked as 130.

[0117] Taking the temperature rise process of the chamber cover plate during the process of forming a SiN thin film by PEALD as an example; in this process, the temperature of the heating pedestal is 450 °C, and the set temperature of the chamber cover plate is 200 °C. Refer to Figure 7 As shown, with 4 heating plates for heating, in the first stage (step 1), that is, in the time period from 0 min to t1 min, the temperature of the chamber cover plate rises from room temperature 25 °C to the set temperature 200 °C. Then, it enters the heat preservation stage from the heating stage. Due to inertia, in the second stage (step 2), the highest temperature can reach about 215 °C. After being adjusted by the PID (Proportional Integral Derivative) control method, the temperature gradually drops back to the set temperature 200 °C, which takes (t2 - t1) min. Since the power of the heating plate is fixed, the heating and temperature rise rate of the chamber cover plate is fast in the first stage, which is likely to affect the fragile components in the chamber. At the same time, the highest heating temperature exceeds the set temperature by a large amount, and the callback time is long, resulting in a long overall temperature rise time, thus reducing the production capacity.

[0118] In the prior art, the structure of the heating block arranged on the chamber cover has disadvantages such as a single heating method, poor temperature control accuracy due to poor process repeatability of the heating block, etc. At the same time, this heating method also has a certain impact on the RF output. Both the heating element and the temperature control element will interfere with the RF. In actual processes, there have been many problems with film performance fluctuations caused by heating tapes. During the actual process, it was found that when the RF set power of two chambers is the same, there are certain differences in the film performance (thickness, thickness uniformity, WER, stress, etc.) of the two chambers. There are many reasons for this difference, which may be related to the hardware differences of the two chambers themselves, the differences in the actual RF input energy, insufficient heating and temperature control accuracy, and untimely temperature feedback, etc.

[0119] To improve the temperature control accuracy and reduce the heating-up time, optionally, in combination with Figure 5 , Figure 8 and Figure 9 , the chamber cover 243 includes an air inlet block 248; the process chamber further includes an annular heat insulation layer 240, an annular heating tape 245 and a plurality of heating rods 244 arranged on the side of the chamber cover 243 away from the uniform flow structure 241; the inner ring of the annular heat insulation layer 240 is used to expose the air inlet block 248 of the chamber cover; the plurality of heating rods 244 are arranged in a circle around the annular heat insulation layer 240, and a part of the heating rods 244 is arranged inside the chamber cover 243 and the rest protrudes from the upper surface of the chamber cover 243; the annular heating tape 245 is arranged in a circle around the plurality of heating rods 244.

[0120] To improve the heating uniformity, the plurality of heating rods can be evenly arranged in a circle around the annular heat insulation layer. The angle between the heating rod and the upper surface of the chamber cover is not limited. For example, the heating rod can be perpendicular to the upper surface of the chamber cover. At this time, the heating rod is vertically inserted into the chamber cover; or, the heating rod can be arranged at an acute angle to the upper surface of the chamber cover. At this time, the heating rod is obliquely inserted into the chamber cover. Here, the direction of the oblique insertion is not limited, and it can be, as shown in Figure 10 , obliquely inserted into the chamber cover along the direction away from the center of the chamber cover 243, or, as shown in Figure 11 , obliquely inserted into the chamber cover along the direction close to the center of the chamber cover 243. Considering space saving, the structure shown in Figure 5 where the heating rod 244 is perpendicular to the upper surface of the chamber cover 243 can be selected; considering improving the temperature uniformity of the chamber cover, the structure shown in Figure 11 where the heating rod 244 is obliquely inserted into the chamber cover along the direction close to the center of the chamber cover 243 can be selected.

[0121] The number, heating power, and specific placement positions of the above-mentioned heating rods can be adjusted according to the process temperature requirements. For example, the number of heating rods can be 5 to 10, preferably 6 to 8, and the power of the heating rods can be 300W to 1000W, preferably 400W to 600W. Additionally, the insertion angle and depth of the heating rods can be determined based on the shape, thickness, etc. of the cavity cover and the flow equalizing structure.

[0122] To protect the heating rods and extend their service life, referring to Figure 5 as shown, the process chamber may further include a ceramic cylinder 247, which is arranged around the heating rod 244 in a circle, serving both a protective role and facilitating insertion and removal. Referring to Figure 5 as shown, the cavity cover may further include an annular insulating layer 246, which can isolate the annular heating belt from the chamber wall and play a role in protecting the annular heating belt.

[0123] The embodiments of the present application provide a heating structure integrating heating rods and heating belts. First, the heating belt can be used for heating to raise the temperature of the cavity cover from room temperature to a first preset temperature value, and the heating rate in this stage is relatively low. Then, the heating rods are used for heating to raise the temperature of the cavity cover from the first preset temperature value to a second preset temperature value, and the heating rate in this stage is higher than that of the previous stage. Next, the heating belt is used for heating to raise the temperature of the cavity cover from the second preset temperature value to the target temperature value. Due to inertia, the temperature of the cavity cover will continue to rise from the target temperature value to the maximum value, and then the PID control method is used to adjust it to make the temperature drop back to near the target temperature value. Since the heating rate of the heating rods is greater than that of the heating belt, therefore, in the stage where the temperature of the cavity cover rises from the second preset temperature value to the target temperature value, using the heating belt for heating can reduce the maximum temperature reached due to inertia subsequently, thereby reducing the temperature callback time, saving the overall heating time, shortening the recovery time after the chamber PM or downtime, and improving the machine utilization rate. Additionally, in the stage where the temperature of the cavity cover rises from room temperature to the first preset temperature value, using the heating belt for heating, due to the small heating rate and low heating rate, it can protect the fragile components in the chamber as much as possible and extend their service life.

[0124] Taking the temperature rise process of the cavity cover during the process of forming a SiN film by PEALD as an example; in this process, the temperature of the heating base is 450°C, and the set temperature of the cavity cover is 200°C. During the heating process adopted in the embodiments of the present application, the first preset temperature value can be set to 100°C, the second preset temperature value can be set to 180°C, the target temperature value is 200°C, and the maximum temperature during the temperature rise process is 205°C; compared with the maximum temperature of 215°C in the aforementioned prior art, the maximum temperature reached during the temperature rise process is significantly reduced, thereby reducing the callback time for the temperature to drop from the maximum value to the target temperature value and saving the overall heating time.

[0125] An embodiment of the present application further provides a temperature control method for a semiconductor process equipment, including:

[0126] S1. Referring to Figure 12 the Step1 stage shown, within the time period of 0 min - t3 min, control the heating belt to heat, so that the temperature of the chamber cover rises from room temperature to the first preset temperature value.

[0127] Generally, the room temperature is 25°C. The range of the first preset temperature value can include 90°C - 110°C. For example, the first preset temperature value can be 90°C, 100°C, or 110°C, etc., which can be determined according to the actual situation.

[0128] S2. Referring to Figure 12 the Step2 stage shown, within the time period of t3 min - t4 min, control the heating belt to stop heating, and control the heating rod to heat, so that the temperature of the chamber cover rises from the first preset temperature value to the second preset temperature value; the heating rate of the heating rod is greater than that of the heating belt.

[0129] The range of the second preset temperature value can include 170°C - 190°C. For example, the second preset temperature value can be 170°C, 180°C, or 190°C, etc., which can be determined according to the actual situation.

[0130] S3. Referring to Figure 12 the Step3 stage shown, within the time period of t4 min - t5 min, control the heating rod to stop heating, and control the heating belt to heat, so that the temperature of the chamber cover rises from the second preset temperature value to the target temperature value.

[0131] The range of the target temperature value can include 195°C - 205°C. For example, the target temperature value can be 195°C, 200°C, or 205°C, etc., which can be determined according to the actual situation.

[0132] Through the above temperature control method, on the one hand, it is possible to reduce the maximum temperature reached due to inertia subsequently, thereby reducing the temperature callback time, saving the overall heating time, shortening the recovery time after chamber PM or downtime, and improving the machine utilization rate. On the other hand, in the stage where the temperature of the chamber cover rises from room temperature to the first preset temperature value, the heating belt is used for heating. Since the heating rate is small and the temperature rise rate is also low, it is possible to protect the fragile components in the chamber as much as possible and extend their service life.

[0133] It should be noted that after the above step S3, the temperature control method further includes:

[0134] S4. Referring to Figure 12In the Step 4 stage shown, within the time period from t5 min to t6 min, the PID control method is adopted for adjustment to make the temperature drop back to the target temperature value.

[0135] The PID control method is widely used in the fields of temperature control, water level control, flight attitude control, etc. Relevant descriptions can refer to the prior art and will not be elaborated here.

[0136] It should be noted that the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, commodity or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, commodity or device including the said element.

[0137] As used in this application, the terms "an embodiment", "embodiment" or "one or more embodiments" mean that the specific features, structures or characteristics described in connection with the embodiments are included in at least one embodiment of this application. In addition, please note that the examples of the phrase "in one embodiment" herein do not necessarily all refer to the same embodiment.

[0138] The above are only the embodiments of this application and are not used to limit this application. For those skilled in the art, various changes and modifications can be made to this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the scope of the claims of this application.

Claims

1. A radio frequency power output circuit, characterized in that, Applied to semiconductor process equipment, the semiconductor process equipment includes: a plurality of independent process chambers; the radio frequency power output circuit includes: A radio frequency power supply module, including a first radio frequency power supply and a second radio frequency power supply. The first radio frequency power supply is used to output a first radio frequency signal, and the second radio frequency power supply is used to output a second radio frequency signal. Moreover, the frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal. A power distribution module, including a first input terminal, a second input terminal, and a plurality of output terminals corresponding to the plurality of process chambers one by one. The first input terminal is electrically connected to the first radio frequency power supply and is used to receive the first radio frequency signal output by the first radio frequency power supply. The second input terminal is electrically connected to the second radio frequency power supply and is used to receive the second radio frequency signal output by the second radio frequency power supply. Each output terminal is used to be electrically connected to the corresponding process chamber. The power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input terminal and / or the energy of the second radio frequency signal received by the second input terminal to each process chamber.

2. The RF power output circuit according to claim 1, wherein The power distribution module includes a plurality of power distribution units, and the plurality of power distribution units correspond to the plurality of process chambers one by one. The power distribution unit includes a first filter circuit and a second filter circuit. The input terminal of the first filter circuit is electrically connected to the first radio frequency power supply, and the output terminal is electrically connected to the corresponding process chamber. The first filter circuit is used to isolate signals other than the first radio frequency signal. The input terminal of the second filter circuit is electrically connected to the second radio frequency power supply, and the output terminal is electrically connected to the output terminal of the first filter circuit. The second filter circuit is used to isolate signals other than the second radio frequency signal.

3. The radio frequency power output circuit according to claim 2, wherein The power distribution unit further includes a balance circuit, and the balance circuit is arranged between the output terminal of the first filter circuit and the process chamber and is used to change the resonance point of the circuit to avoid series resonance.

4. The radio frequency power output circuit according to claim 2, wherein The first filter circuit includes a fifth capacitor, the second filter circuit includes a sixth capacitor and a third inductor connected in parallel, and the balance circuit includes a fourth inductor. Among them, the first end of the fifth capacitor is electrically connected to the first radio frequency power supply, the first ends of the sixth capacitor and the third inductor are both electrically connected to the second radio frequency power supply, the second ends of the fifth capacitor, the second ends of the sixth capacitor and the second end of the third inductor are all electrically connected to the first end of the fourth inductor, and the second end of the fourth inductor is electrically connected to the corresponding process chamber.

5. The radio frequency power output circuit according to claim 4, wherein The inductance value of the fourth inductor is less than the inductance value of the third inductor.

6. The radio frequency power output circuit according to claim 5, wherein, The power distribution unit further includes an isolation circuit. The input terminal of the isolation circuit is electrically connected to the input terminal of the second filter circuit, and the output terminal of the isolation circuit is grounded. The isolation circuit is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit.

7. The RF power output circuit according to claim 6, wherein The isolation circuit includes a seventh capacitor. The first end of the seventh capacitor is electrically connected to the first end of the sixth capacitor, and the second end of the seventh capacitor is grounded.

8. The radio frequency power output circuit according to any one of claims 2-7, characterized in that The radio frequency power output circuit further includes a plurality of power compensation units; the plurality of power compensation units correspond to the plurality of power distribution units one by one; The input end of the power compensation unit is electrically connected to the output end of the corresponding power distribution unit, and the output end of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signals output by each power compensation unit to the corresponding process chamber is the same.

9. The RF power output circuit according to claim 8, wherein The power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel; The first ends of the first variable capacitor and the second variable capacitor are both electrically connected to the output end of the corresponding power distribution unit, and the second ends of the first variable capacitor and the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber; The signal output by the power distribution unit includes a first signal and a second signal, and the frequency of the first signal is greater than the frequency of the second signal; The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

10. The radio frequency power output circuit according to claim 1, wherein The frequency value range of the first radio frequency signal includes 10 MHz to 100 MHz, and the frequency value range of the second radio frequency signal includes 300 KHz to 500 KHz.

11. The radio frequency power output circuit according to claim 1, wherein The radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit; The input end of the first radio frequency matching circuit is electrically connected to the output end of the first radio frequency power supply, and the output end of the first radio frequency matching circuit is electrically connected to the first input end of the power distribution module; The input end of the second radio frequency matching circuit is electrically connected to the output end of the second radio frequency power supply, and the output end of the second radio frequency matching circuit is electrically connected to the second input end of the power distribution module.

12. The radio frequency power output circuit according to claim 11, wherein, The first radio frequency matching circuit includes a first capacitor, a second capacitor and a first inductor; Wherein, the first ends of the first capacitor and the second capacitor are both electrically connected to the output end of the first radio frequency power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module; The second radio frequency matching circuit includes a third capacitor, a fourth capacitor and a second inductor; Wherein, the first ends of the third capacitor and the second inductor are both electrically connected to the output end of the second radio frequency power supply, the second end of the third capacitor is grounded, the second ends of the second inductor and the fourth capacitor are both electrically connected to the second input end of the power distribution module, and the second end of the fourth capacitor is grounded.

13. A semiconductor process equipment, characterized in that, Including a plurality of independent process chambers and the radio frequency power output circuit according to any one of claims 1-12; The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly which are oppositely arranged inside the chamber body; Each output end of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

14. The semiconductor processing equipment according to claim 13, wherein, The upper electrode assembly includes a cavity cover and a flow homogenizing structure. The flow homogenizing structure is fixed on one side of the cavity cover, and the cavity cover includes an air inlet block; The process chamber further includes an annular heat insulation layer, an annular heating belt and a plurality of heating rods arranged on the side of the cavity cover away from the flow homogenizing structure. The inner ring of the annular heat insulation layer is used to expose the air inlet block of the cavity cover. The plurality of heating rods are arranged in a circle around the annular heat insulation layer. A part of the heating rod is arranged inside the cavity cover, and the rest protrudes from the upper surface of the cavity cover; The annular heating belt is arranged in a circle around the plurality of heating rods.

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