Silicon-based magnetic material heterogeneous integrated broadband miniaturized artificial magnetic conductor structure

Abstract

The invention belongs to the technical field of microwave metamaterial artificial magnetic conductors, and particularly discloses a silicon-based magnetic material heterogeneous integrated broadband miniaturized artificial magnetic conductor structure which comprises two silicon-based heterogeneous integrated dielectric layers, two metal circuit layers and a metal bottom plate. The equivalent magnetic conductivity of the dielectric layer is improved through heterogeneous integration of the silicon-based magnetic material, so that the equivalent inductance of the artificial magnetic conductor is enhanced, the in-phase reflection phase bandwidth is widened, and the section of the artificial magnetic conductor is reduced; and in combination with the comprehensive design of the double-layer metal circuit layer and the metal bottom plate structure, the size of the artificial magnetic conductor is further reduced while the in-phase reflection bandwidth of the artificial magnetic conductor is maintained, and the broadband and miniaturization of the artificial magnetic conductor are both considered. Through the small size and the extremely low profile, the purpose of in-phase reflection of electromagnetic waves within the broadband range is achieved, high-angle stability is kept, and direct wafer bonding integration with other silicon-based circuits can be achieved.

Description

Technical Field

[0001] The invention relates to the technical field of microwave metamaterial artificial magnetic conductors, and in particular to a broadband miniaturized artificial magnetic conductor structure of heterogeneously integrated silicon-based magnetic materials. Background Art

[0002] In recent years, with the rapid development of intelligent metasurface technology, artificial magnetic conductors, as a key component, have become a hot topic in the microwave field due to their special electromagnetic properties. Artificial magnetic conductors are artificial periodic units that can simulate ideal magnetic conductors in a special frequency band and exhibit in-phase reflection characteristics for plane waves. In addition, artificial magnetic conductors can also form surface wave band gaps in a certain frequency band to prevent the propagation of surface waves, which can be used to improve the overall performance of antennas and radio frequency devices. Therefore, the research on artificial magnetic conductors has extremely high academic and application value.

[0003] With the increasing shortage of spectrum resources in current communication systems and the development of integrated circuit technology, people have put forward higher requirements for the miniaturization, integration and broadband of radio frequency communication systems. The common artificial magnetic conductor structure based on PCB technology is large in size and does not meet the requirements for miniaturization of microwave devices in practical applications. Moreover, with the increase of frequency, the artificial magnetic conductor structure with short-circuit posts is difficult to process, requires high precision, and has complex processes, making it difficult to achieve. After processing, it needs to be indirectly integrated with radio frequency devices such as antennas through additional fixed structures, which limits the further improvement of the integration of radio frequency systems.

[0004] Therefore, it is challenging to design an artificial magnetic conductor that meets the requirements of broadband and miniaturization and is easy to integrate, and researchers have conducted a lot of related research. Active artificial magnetic conductors overcome bandwidth limitations by introducing non-Foster circuits in structural design, but non-Foster circuits are large in size and are not suitable for the need for miniaturization in the design of RF communication systems above 1 GHz. There are also artificial magnetic conductor designs that reduce the unit size by loading a single high dielectric constant material and a spiral compact metal circuit, but the bandwidth is often narrow, and the relative bandwidth of the in-phase reflection needs to be widened by increasing the thickness of the dielectric layer, which is difficult to meet the needs of integration. Summary of the invention

[0005] The purpose of the present invention is to overcome the defects of the above technical problems and provide a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials, aiming to solve the problem that the existing artificial magnetic conductor structure is difficult to take into account the indicators of miniaturization, broadband and easy integration in a high-integration radio frequency system. The artificial magnetic conductor structure provided by the present invention is novel and can achieve in-phase reflection of broadband planar electromagnetic waves at a relatively small size.

[0006] To achieve the above object, the present invention provides the following technical solution: A broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration, comprising:

[0007] A first silicon-based hetero-integrated dielectric layer and a second silicon-based hetero-integrated dielectric layer stacked together;

[0008] A first metal circuit layer disposed on the upper surface of the first silicon-based hetero-integrated dielectric layer;

[0009] A second metal circuit layer disposed on the upper surface of the second silicon-based hetero-integrated dielectric layer;

[0010] A metal bottom plate disposed on the lower surface of the second silicon-based hetero-integrated dielectric layer; when the first silicon-based hetero-integrated dielectric layer and the second silicon-based hetero-integrated dielectric layer are stacked, the second metal circuit layer is located on the upper surface of the second silicon-based hetero-integrated dielectric layer and the lower surface of the first silicon-based hetero-integrated dielectric layer.

[0011] Preferably, the first silicon-based hetero-integrated dielectric layer includes a first silicon substrate layer and a first magnetic material layer for increasing the equivalent inductance of the structure. The first magnetic material layer is nested inside the first silicon substrate layer, and there is close contact between the first silicon substrate layer and the first magnetic material layer without air gaps, and the thickness of the first silicon substrate layer is greater than, equal to, or less than the thickness of the first magnetic material layer.

[0012] Preferably, the second silicon-based hetero-integrated dielectric layer includes a second silicon substrate layer and a second magnetic material layer for increasing the equivalent inductance of the structure. The second magnetic material layer is nested inside the second silicon substrate layer, and there is close contact between the second silicon substrate layer and the second magnetic material layer without air gaps, and the thickness of the second silicon substrate layer is less than, equal to, or greater than the thickness of the second magnetic material layer;

[0013] The sum of the thicknesses of the first silicon-based hetero-integrated dielectric layer and the second silicon-based hetero-integrated dielectric layer is greater than or equal to the sum of the thicknesses of the first magnetic material layer and the second magnetic material layer, and the first magnetic material layer and the second magnetic material layer are in close contact;

[0014] The shape structures of the first magnetic material layer and the second magnetic material layer are a structure of axial symmetry or a combination structure of multiple axial symmetry shapes;

[0015] The material types of the first magnetic material layer and the second magnetic material layer are one or more of inorganic magnetic materials, organic magnetic materials, composite magnetic materials, and metal magnetic materials.

[0016] Preferably, the first metal circuit layer is provided with a central square metal ring and first parasitic metal arms, second parasitic metal arms, third parasitic metal arms, and fourth parasitic metal arms symmetrically distributed around the central square metal ring;

[0017] The distances between the first parasitic metal arm, the second parasitic metal arm, the third parasitic metal arm, and the fourth parasitic metal arm are the same, and their structures are the same. There is no direct connection between them, and there is a coupling notch between every two parasitic metal arms.

[0018] Preferably, the second metal circuit layer is arranged as four centrosymmetric metal patch structures, including a first metal patch, a second metal patch, a third metal patch, and a fourth metal patch;

[0019] The shape structures of the first metal patch, the second metal patch, the third metal patch, and the fourth metal patch are a combined structure of one or more centrosymmetric shape structures; there is no direct connection between the first metal patch, the second metal patch, the third metal patch, and the fourth metal patch.

[0020] The shape structures of the first metal patch, the second metal patch, the third metal patch, and the fourth metal patch adopt a symmetric shape structure or a combined structure of multiple symmetric shape structures. Preferably, the first metal patch, the second metal patch, the third metal patch, and the fourth metal patch are located on the upper surface of the second magnetic material layer or the lower surface of the first magnetic material layer, and do not contact the first silicon substrate layer or the second silicon substrate layer.

[0021] Preferably, the metal base plate is a conductive carrier (conductive metal material) of copper, silver, gold, chromium, aluminum, or tin, and the metal base plate can be a complete base plate structure or a defective base plate structure;

[0022] Preferably, the shape of the slotted structure on the defective base plate structure is a composite structure composed of one or several axially symmetric structures such as a semi-circular slotted structure, a rectangular slotted structure, or a triangular slotted structure.

[0023] Preferably, the thickness of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration is not greater than 0.05λ, and the unit size is not greater than 0.1λ, where λ is the wavelength of the lowest operating frequency of the artificial magnetic conductor in free space.

[0024] The beneficial effects of the present invention are as follows:

[0025] 1) Through silicon-based hetero-integration, the present invention sets a magnetic material with a dielectric constant close to that of silicon in the dielectric layer, improves the equivalent inductance of the artificial magnetic conductor, and improves the in-phase reflection bandwidth of the miniaturized artificial magnetic conductor; the magnetic material has a dielectric constant close to that of silicon, thereby improving the equivalent inductance while maintaining the equivalent capacitance of the structure; and compared with the traditional artificial magnetic conductor using a PCB dielectric layer, the introduction of the silicon substrate layer facilitates wafer bonding with the silicon substrate of other microwave devices, which is beneficial to radio frequency integration;

[0026] 2) The present invention, through the comprehensive design of the double-layer metal circuit layer and the metal bottom plate structure, and by utilizing the eddy current effect near the slotted structure on the metal bottom plate to enhance the regional magnetic flux, while further reducing the size of the artificial magnetic conductor, maintains the broadside reflection bandwidth of the artificial magnetic conductor and has good angular stability; the second metal circuit layer and the metal bottom plate jointly form the second resonant unit, which exhibits high impedance characteristics at different frequency points and has the ability to independently adjust the low-frequency or high-frequency part of the broadside reflection phase bandwidth; by designing slots on the metal bottom plate, the magnetic flux of the structure can be further increased, and while miniaturizing the size of the artificial magnetic conductor, the broadside reflection bandwidth is also taken into account.

[0027] 3) The broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration proposed by the present invention has low-profile broadside reflection characteristics. Compared with the traditional method of broadening the broadside reflection phase bandwidth by increasing the thickness of the dielectric layer, the thickness of this structure is less than 0.05λ, which is much smaller than the thickness of 0.25λ of the ordinary reflector. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0029] Figure 1 is an overall exploded schematic diagram of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration;

[0030] Figure 2 is a circuit structure diagram of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration in which the coupling notch structure in the first metal circuit layer is rectangular;

[0031] Figure 3 is a schematic diagram of the silicon-based hetero-integration dielectric layer structure of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration;

[0032] Figure 4 is a circuit structure diagram of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration in which the metal patch in the second metal circuit layer is L-shaped;

[0033] Figure 5 is a circuit structure diagram of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration in which the metal bottom plate is a slotted bottom plate structure and the slotted structure is semi-circular;

[0034] Figure 6It is a schematic diagram of the overall structure of the silicon-based heterogeneous integrated dielectric layer of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer located above the silicon-based heterogeneous integrated dielectric layer;

[0035] Figure 7 It is a schematic diagram of the overall structure of the silicon-based heterogeneous integrated dielectric layer of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer located in the middle of the silicon-based heterogeneous integrated dielectric layer;

[0036] Figure 8 It is a schematic diagram of the overall structure of the silicon-based heterogeneous integrated dielectric layer of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer located below the silicon-based heterogeneous integrated dielectric layer;

[0037] Figure 9 It is a schematic diagram of the overall structure of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer in a double-layer cylindrical structure in silicon-based magnetic material heterogeneous integration;

[0038] Figure 10 It is a schematic diagram of the silicon-based heterogeneous integrated dielectric layer structure of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer in a double-layer cylindrical structure in silicon-based magnetic material heterogeneous integration;

[0039] Figure 11 It is a schematic diagram of the overall structure of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer in a double-layer cross-shaped structure in silicon-based magnetic material heterogeneous integration;

[0040] Figure 12 It is a schematic diagram of the silicon-based heterogeneous integrated dielectric layer structure of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer in a double-layer cross-shaped structure in silicon-based magnetic material heterogeneous integration;

[0041] Figure 13 It is a schematic diagram of the overall structure of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer in a double-layer square structure in silicon-based magnetic material heterogeneous integration;

[0042] Figure 14 It is a schematic diagram of the silicon-based heterogeneous integrated dielectric layer structure of a broadband miniaturized artificial magnetic conductor structure with a magnetic material layer in a double-layer square structure in silicon-based magnetic material heterogeneous integration;

[0043] Figure 15 It is a circuit diagram of a broadband miniaturized artificial magnetic conductor structure with an elliptical coupling notch structure in the first metal circuit layer in silicon-based magnetic material heterogeneous integration;

[0044] Figure 16 It is a circuit diagram of a broadband miniaturized artificial magnetic conductor structure with a trapezoidal coupling notch structure in the first metal circuit layer in silicon-based magnetic material heterogeneous integration;

[0045] Figure 17 It is the circuit structure diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the metal patch in the second metal circuit layer is semi-circular.

[0046] Figure 18 It is the circuit structure diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the metal patch in the second metal circuit layer is double L-shaped.

[0047] Figure 19 It is the circuit structure diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the metal patch in the second metal circuit layer is semi-circular.

[0048] Figure 20 It is the overall structure diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the metal bottom plate is a slotted bottom plate structure and the slot structure is rectangular.

[0049] Figure 21 It is the overall structure diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the metal bottom plate is a slotted bottom plate structure and the slot structure is triangular.

[0050] Figure 22 It is the reflection phase curve diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the magnetic material layer is a double-layer square structure.

[0051] Figure 23 It is the reflection phase curve diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the magnetic material layer is a double-layer square structure under TE polarization.

[0052] Figure 24 It is the reflection phase curve diagram of a broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials where the magnetic material layer is a double-layer square structure under TM polarization.

[0053] In the figure, 1 - the first metal circuit layer; 2 - the first silicon-based heterogeneous integration dielectric layer; 3 - the second metal circuit layer; 4 - the second silicon-based heterogeneous integration dielectric layer; 5 - the metal bottom plate; 101 - the central square metal ring; 102 - the first parasitic metal arm; 103 - the second parasitic metal arm; 104 - the third parasitic metal arm; 105 - the fourth parasitic metal arm; 106 - the coupling notch; 201 - the first magnetic material layer; 202 - the first silicon substrate layer; 301 - the first metal patch; 302 - the second metal patch; 303 - the third metal patch; 304 - the fourth metal patch; 401 - the second magnetic material layer; 402 - the second silicon substrate layer. Detailed implementation manners

[0054] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0055] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0056] In the description of the present invention, unless otherwise specified, the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "back", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0057] Please refer to Figures 1 - 24 , the present invention provides a technical solution: a broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration, as Figure 1 shown, including: a first silicon-based hetero-integrated dielectric layer 2 and a second silicon-based hetero-integrated dielectric layer 4 stacked together; a first metal circuit layer 1 disposed on the upper surface of the first silicon-based hetero-integrated dielectric layer 2 and a second metal circuit layer 3 disposed on the upper surface of the second silicon-based hetero-integrated dielectric layer 4; and a metal bottom plate 5 disposed on the lower surface of the second silicon-based hetero-integrated dielectric layer 4.

[0058] In this technical solution, by introducing a silicon-based material in the design of the dielectric layer of the artificial magnetic conductor and utilizing the ability of direct wafer bonding between silicon-based materials, the direct connection between the double-layer silicon-based dielectrics and the radio frequency integration between the artificial magnetic conductor and other silicon-based circuits are realized; and through silicon-based heterogeneous integration, a magnetic material with a dielectric constant similar to that of silicon is set in the dielectric layer to adjust the equivalent magnetic permeability of the fixed-volume dielectric layer, thereby enhancing the equivalent inductance of the artificial magnetic conductor and improving the in-phase reflection bandwidth of the miniaturized artificial magnetic conductor; by setting a capacitive second metal circuit layer on the upper surface of the second silicon-based heterogeneous integration dielectric layer that does not touch the periodic boundary, and then combining the first metal circuit layer and the metal bottom plate for a double-layer composite structure design, the further reduction of the unit size of the artificial magnetic conductor is achieved, while taking into account the in-phase reflection bandwidth of the artificial magnetic conductor.

[0059] Further, as Figure 3 shown, the first silicon-based heterogeneous integration dielectric layer 2 includes a first silicon substrate layer 202 and a first magnetic material layer 201 for increasing the equivalent inductance of the structure. The first magnetic material layer 201 is nested inside the first silicon substrate layer 202. The first silicon substrate layer 202 and the first magnetic material layer 201 are in close contact with no air gap, and the thickness of the first silicon substrate layer 202 is greater than, equal to, or less than the thickness of the first magnetic material layer 201.

[0060] As Figure 3 shown, the second silicon-based heterogeneous integration dielectric layer 4 includes a second silicon substrate layer 402 and a second magnetic material layer 401 for increasing the equivalent inductance of the structure. The second magnetic material layer 401 is nested inside the second silicon substrate layer 402. The second silicon substrate layer 402 and the second magnetic material layer 401 are in close contact with no air gap, and the thickness of the second silicon substrate layer 402 is less than, equal to, or greater than the thickness of the second magnetic material layer 401.

[0061] The sum of the thicknesses of the first silicon-based heterogeneous integration dielectric layer 2 and the second silicon-based heterogeneous integration dielectric layer 4 can be greater than or equal to the sum of the thicknesses of the first magnetic material layer 201 and the second magnetic material layer 401, and the first magnetic material layer 201 and the second magnetic material layer 401 are in close contact; and when the sum of the thicknesses of the first magnetic material layer 201 and the second magnetic material layer 401 is less than the sum of the thicknesses of the first silicon-based heterogeneous integration dielectric layer 2 and the second silicon-based heterogeneous integration dielectric layer 4, the overall position can be above, in the middle, below, etc. in the silicon-based heterogeneous integration dielectric layer, as Figure 6 、 Figure 7 、 Figure 8 shown; the material types of the first magnetic material layer 201 and the second magnetic material layer 401 can be one or more of inorganic magnetic materials, organic magnetic materials, composite magnetic materials, and metal magnetic materials.

[0062] The first magnetic material layer 201 and the second magnetic material layer 401 adopt a combined structure of one or more axisymmetric shapes, including cylindrical structures, hexagonal prism structures, square structures, and other combined frustum structures, etc., such as double-layer cylindrical magnetic material structures, double-layer cross-shaped magnetic structures, double-layer square magnetic material structures, etc., respectively as Figure 9 , Figure 11 , Figure 13 shown.

[0063] As Figure 10 shown, the first magnetic material layer 201 and the second magnetic material layer 401 adopt a cylindrical magnetic material structure, stacked in double layers, and together with the first silicon substrate layer 202 and the second silicon substrate layer 402, form the first silicon-based heterogeneous integrated dielectric layer 2 and the second silicon-based heterogeneous integrated dielectric layer 4.

[0064] As Figure 12 shown, the first magnetic material layer 201 and the second magnetic material layer 401 adopt a cross-shaped magnetic material structure, stacked in double layers, and together with the first silicon substrate layer 202 and the second silicon substrate layer 402, form the first silicon-based heterogeneous integrated dielectric layer 2 and the second silicon-based heterogeneous integrated dielectric layer 4.

[0065] As Figure 14 shown, the first magnetic material layer 201 and the second magnetic material layer 401 adopt a square magnetic material, stacked in double layers, and together with the first silicon substrate layer 202 and the second silicon substrate layer 402, form the first silicon-based heterogeneous integrated dielectric layer 2 and the second silicon-based heterogeneous integrated dielectric layer 4.

[0066] The first magnetic material layer 201 and the second magnetic material layer 401 are stacked in double layers to form the magnetic material layer in the artificial magnetic conductor silicon-based heterogeneous integrated dielectric layer. By adopting a double-layer magnetic material structure, the co-polarized reflection phase relative bandwidth of the artificial magnetic conductor unit is significantly improved under the same dielectric volume.

[0067] The first metal circuit layer 1 is provided with a central square metal ring 101 and first parasitic metal arms 102, second parasitic metal arms 103, third parasitic metal arms 104, and fourth parasitic metal arms 105 symmetrically distributed around the central square metal ring 101.

[0068] The first parasitic metal arms 102, second parasitic metal arms 103, third parasitic metal arms 104, and fourth parasitic metal arms 105 have the same spacing and the same structure, and there is a coupling notch 106 between every two parasitic metal arms.

[0069] The shape of the coupling notch 106 can adopt various types of symmetric geometric figures, such as rectangles, ellipses, trapezoids, etc., respectively as Figure 2 , Figure 15 ,Figure 16 as shown

[0070] As Figure 2 shown, the first parasitic metal arm 102, the second parasitic metal arm 103, the third parasitic metal arm 104 and the fourth parasitic metal arm 105 are symmetrically distributed around the central square metal ring 101, and the coupling notch 106 between the metal arms is set as a rectangular structure.

[0071] As Figure 15 shown, the first parasitic metal arm 102, the second parasitic metal arm 103, the third parasitic metal arm 104 and the fourth parasitic metal arm 105 are symmetrically distributed around the central square metal ring 101, and the coupling notch 106 between the metal arms is set as an elliptical structure.

[0072] As Figure 16 shown, the first parasitic metal arm 102, the second parasitic metal arm 103, the third parasitic metal arm 104 and the fourth parasitic metal arm 105 are symmetrically distributed around the central square metal ring 101, and the coupling notch 106 between the metal arms is set as a trapezoidal structure.

[0073] The present invention weakens the narrowband effect caused by the strong resonance structure by setting four parasitic metal arms with coupling notches 106 on the upper surface of the first silicon-based heterogeneous integration dielectric layer 2, broadens the frequency range where the surface impedance of the artificial magnetic conductor is higher than the free-space wave impedance, thereby realizing the improvement of the in-phase reflection bandwidth of the artificial magnetic conductor.

[0074] Furthermore, as Figure 4 shown, the second metal circuit layer 3 is set as four centrally symmetric metal patch structures, including the first metal patch 301, the second metal patch 302, the third metal patch 303 and the fourth metal patch 304. And there is no direct connection between the first metal patch 301, the second metal patch 302, the third metal patch 303 and the fourth metal patch 304, which is a non-closed structure, and any metal patch does not contact the periodic boundary. The design of the double-layer metal circuit layer broadens the degree of freedom of bandwidth adjustment of the artificial magnetic conductor.

[0075] The first metal patch 301, the second metal patch 302, the third metal patch 303 and the fourth metal patch 304 can adopt a combined structure of one or more symmetric shape structures, such as L-shaped, semi-circular, double-L-shaped, semi-circular, etc., as shown respectively in Figure 4 , Figure 17 , Figure 18 , Figure 19As shown. Moreover, the first metal patch 301, the second metal patch 302, the third metal patch 303, and the fourth metal patch 304 are located on the upper surface 401 of the second magnetic material layer or the lower surface of the first magnetic material layer 201, and do not contact the first silicon substrate layer 202 or the second silicon substrate layer 402.

[0076] Furthermore, the metal bottom plate 5 is made of a conductive material with good electrical conductivity, which can reduce the transmission of electromagnetic waves through the dielectric layer, enabling the device loaded with the artificial magnetic conductor to be adapted to various metal platforms. Metal materials such as copper, silver, gold, chromium, aluminum, or tin can be used. The metal bottom plate 5 is a complete bottom plate structure and a defective bottom plate structure, such as Figure 1 shown.

[0077] The slotted structure provided on the defective bottom plate structure can adopt a composite structure of one or several structures with an axisymmetric structure, such as a semi-circular slotted structure, a rectangular slotted structure, or a triangular slotted structure, etc., as Figure 5 、 Figure 20 、 Figure 21 shown.

[0078] A broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration provided by the present invention takes into account the broadband and miniaturized design requirements of the artificial magnetic conductor and has good co-polarized reflection characteristics. When operating in the X-band, for the artificial magnetic conductor, when the unit thickness is less than 0.05λ and the unit size is not greater than 0.1λ, the co-polarized reflection relative bandwidth exceeds 25%, and at the same time, it has good angular stability under both TE polarization and TM polarization.

[0079] Taking the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration having a double-layer square structure of the magnetic material layer as an example, as Figure 22 shown, it is the reflection phase curve of the artificial magnetic conductor. Among them, the artificial magnetic conductor structure using the silicon-based hetero-integrated dielectric layer has good co-polarized reflection characteristics in the X-band. The co-polarized reflection bandwidth is 9.23 GHz - 11.93 GHz, and the relative bandwidth is 25.52%, belonging to a broadband artificial magnetic conductor. The structure thickness is not greater than 0.05λ, and the unit size is not greater than 0.1λ. Calculated according to the lowest operating frequency of 9.23 GHz of the artificial magnetic conductor, the thickness of the artificial magnetic conductor is only 0.02λ, which is much smaller than the height of 0.25λ required for the traditional reflector, and the unit size is also only 0.09λ. Comparing with the case of a pure silicon-based artificial magnetic conductor without using the silicon-based hetero-integrated dielectric layer, the application of the magnetic material reduces the operating frequency band of the artificial magnetic conductor by more than 1.5 GHz, promoting the miniaturization of the artificial magnetic conductor unit.

[0080] Such as Figure 23As shown in the figure, under TE polarization, when the incident angles are 0°, 15°, 30°, 45° and 60°, the reflection phase curve of the broadband miniaturized artificial magnetic conductor structure with a silicon-based magnetic material heterogeneous integration of a double-layer square structure of the magnetic material layer is shown, and the artificial magnetic conductor exhibits good angular stability. Among them, the relative deviation of the maximum zero-degree phase reflection frequency does not exceed 2.3%, and when the incident angle is 15°, the relative deviation of the zero-degree phase reflection frequency is only 0.29%.

[0081] like Figure 24 As shown in the figure, under TM polarization, when the incident angles are 0°, 15°, 30°, 45° and 60°, the reflection phase curve of the broadband miniaturized artificial magnetic conductor structure with a silicon-based magnetic material heterogeneous integration of a double-layer square structure of the magnetic material layer is shown, and the artificial magnetic conductor exhibits good angular stability. Among them, the relative deviation of the maximum zero-degree phase reflection frequency does not exceed 1.9%, and when the incident angle is 15°, the relative deviation of the zero-degree phase reflection frequency is only 0.29%.

[0082] In an embodiment of the present invention, the in-phase reflection bandwidth of the artificial magnetic conductor can be broadened through silicon-based heterogeneous integration. Combined with the comprehensive design of the double-layer metal circuit layer and the metal base plate structure, the size of the artificial magnetic conductor can be further reduced while maintaining the wide in-phase reflection bandwidth of the artificial magnetic conductor, thereby achieving the purpose of both broadband and miniaturization of the artificial magnetic conductor.

[0083] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials, characterized in that Including: A first silicon-based heterogeneous integrated dielectric layer (2) and a second silicon-based heterogeneous integrated dielectric layer (4) stacked together; A first metal circuit layer (1) disposed on the upper surface of the first silicon-based heterogeneous integrated dielectric layer (2); A second metal circuit layer (3) disposed on the upper surface of the second silicon-based heterogeneous integrated dielectric layer (4); A metal bottom plate (5) disposed on the lower surface of the second silicon-based heterogeneous integrated dielectric layer (4).

2. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 1, characterized in that: The first silicon-based heterogeneous integrated dielectric layer (2) includes a first silicon substrate layer (202) and a first magnetic material layer (201) for increasing the structural equivalent inductance. The first magnetic material layer (201) is nested inside the first silicon substrate layer (202). The first silicon substrate layer (202) is in close contact with the first magnetic material layer (201) without an air gap, and the thickness of the first silicon substrate layer (202) is greater than, equal to, or less than the thickness of the first magnetic material layer (201).

3. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 1, characterized in that: The second silicon-based heterogeneous integrated dielectric layer (4) includes a second silicon substrate layer (402) and a second magnetic material layer (401) for increasing the structural equivalent inductance. The second magnetic material layer (401) is nested inside the second silicon substrate layer (402). The second silicon substrate layer (402) is in close contact with the second magnetic material layer (401) without an air gap, and the thickness of the second silicon substrate layer (402) is less than, equal to, or greater than the thickness of the second magnetic material layer (401); The sum of the thicknesses of the second silicon-based heterogeneous integrated dielectric layer (4) and the first silicon-based heterogeneous integrated dielectric layer (2) is greater than or equal to the sum of the thicknesses of the first magnetic material layer (201) and the second magnetic material layer (401), and the first magnetic material layer (201) is in close contact with the second magnetic material layer (401).

4. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 2, characterized in that: The shape structures of the first magnetic material layer (201) and the second magnetic material layer (401) are an axisymmetric structure or a combined structure of multiple axisymmetric shapes; The material types of the first magnetic material layer (201) and the second magnetic material layer (401) are one or more of inorganic magnetic materials, organic magnetic materials, composite magnetic materials, and metal magnetic materials.

5. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 1, characterized in that: The first metal circuit layer (1) is provided with a central square metal ring (101) and first parasitic metal arms (102), second parasitic metal arms (103), third parasitic metal arms (104), and fourth parasitic metal arms (105) symmetrically distributed around the central square metal ring (101); The distances between the first parasitic metal arm (102), the second parasitic metal arm (103), the third parasitic metal arm (104), and the fourth parasitic metal arm (105) are the same, the structures are the same, and there is no direct connection. There is a coupling notch (106) between every two parasitic metal arms.

6. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 1, characterized in that: The second metal circuit layer (3) is provided with four centrosymmetric metal patch structures, including a first metal patch (301), a second metal patch (302), a third metal patch (303), and a fourth metal patch (304); The shape structures of the first metal patch (301), the second metal patch (302), the third metal patch (303) and the fourth metal patch (304) are combined structures of one or more centrosymmetric shape structures; there is no direct connection between the first metal patch (301), the second metal patch (302), the third metal patch (303) and the fourth metal patch (304). The shape structures of the first metal patch (301), the second metal patch (302), the third metal patch (303) and the fourth metal patch (304) adopt a single symmetric shape structure or a combined structure of multiple symmetric shape structures.

7. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 6, characterized in that: The first metal patch (301), the second metal patch (302), the third metal patch (303) and the fourth metal patch (304) are located on the lower surface of the first magnetic material layer (201) or the upper surface of the second magnetic material layer (401), and do not contact the first silicon substrate layer (202) or the second silicon substrate layer (402).

8. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 1, characterized in that: The metal base plate (5) is a conductive metal material such as copper, silver, gold, chromium, aluminum or tin, and the metal base plate (5) is a complete base plate structure or a defective base plate structure.

9. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to claim 8, characterized in that: The shape of the slot structure on the defective base plate structure is a composite structure composed of one or several of the axisymmetric structures.

10. The broadband miniaturized artificial magnetic conductor structure with heterogeneous integration of silicon-based magnetic materials according to any one of claims 1-9, characterized in that: The thickness of the broadband miniaturized artificial magnetic conductor structure with silicon-based magnetic material hetero-integration is not greater than 0.05λ, and the unit size is not greater than 0.1λ, where λ is the wavelength of the lowest operating frequency of the artificial magnetic conductor in free space.

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